WO2023209897A1 - ウエハ加工装置、半導体チップの製造方法および半導体チップ - Google Patents

ウエハ加工装置、半導体チップの製造方法および半導体チップ Download PDF

Info

Publication number
WO2023209897A1
WO2023209897A1 PCT/JP2022/019169 JP2022019169W WO2023209897A1 WO 2023209897 A1 WO2023209897 A1 WO 2023209897A1 JP 2022019169 W JP2022019169 W JP 2022019169W WO 2023209897 A1 WO2023209897 A1 WO 2023209897A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
module
modules
section
dicing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/019169
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
芳邦 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yamaha Motor Co Ltd
Original Assignee
Yamaha Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yamaha Motor Co Ltd filed Critical Yamaha Motor Co Ltd
Priority to PCT/JP2022/019169 priority Critical patent/WO2023209897A1/ja
Priority to JP2024517843A priority patent/JP7846752B2/ja
Priority to PCT/JP2023/003610 priority patent/WO2023210088A1/ja
Priority to TW112114670A priority patent/TWI899562B/zh
Publication of WO2023209897A1 publication Critical patent/WO2023209897A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Definitions

  • the present invention relates to a wafer processing apparatus, a semiconductor chip manufacturing method, and a semiconductor chip, and particularly relates to a wafer processing apparatus, a semiconductor chip manufacturing method, and a semiconductor chip that process a wafer on which a plurality of semiconductor chips are formed.
  • wafer processing apparatuses that process wafers on which a plurality of semiconductor chips are formed.
  • Such a wafer processing apparatus is disclosed in, for example, Japanese Patent No. 6904368.
  • the above-mentioned Japanese Patent No. 6904368 discloses a semiconductor substrate processing apparatus (wafer processing apparatus) that processes a semiconductor substrate (wafer) on which a plurality of integrated circuit chips are formed.
  • This semiconductor substrate processing equipment includes a coating module for applying DAF (Die Attach Film) to a semiconductor substrate, a dicing tape application module for applying a dicing tape to the semiconductor substrate, and a dicing module for dicing the semiconductor substrate. Equipped with various modules.
  • DAF Die Attach Film
  • dicing tape application module for applying a dicing tape to the semiconductor substrate
  • a dicing module for dicing the semiconductor substrate. Equipped with various modules.
  • semiconductor substrates are sequentially processed by various modules.
  • each process (each modules) have different cycle times.
  • a user desires to change the length of unmanned operation time, such as wanting to increase the length of unmanned operation time at night when there are few workers.
  • the optimal equipment configuration differs depending on the product and the user's requests, there is a problem in that it is difficult to construct the optimal equipment configuration.
  • This invention has been made to solve the above-mentioned problems, and one object of the invention is to provide a wafer processing apparatus, a semiconductor chip manufacturing method, and a semiconductor chip manufacturing method that can construct an optimal equipment configuration. By offering a tip.
  • a wafer processing apparatus includes a module selected from a plurality of modules that perform mutually different types of processing on a wafer on which a plurality of semiconductor chips are formed. , the number of each of the plurality of modules can be changed.
  • the number of each of the plurality of modules can be changed as described above. This makes it possible to change the number of each of multiple modules, so for example, if the cycle time of each process differs for each product that is a processed product of wafers, the cycle time of each process for each product can be changed.
  • the equipment configuration can be changed depending on the size. Additionally, if there is a user's request to change the length of unmanned operation time, such as increasing the length of unmanned operation time at night when there are fewer workers, it is possible to change the equipment configuration according to the user's request. I can do it. As a result, even if the optimal equipment configuration differs depending on the product or the user's request, the optimal equipment configuration can be constructed.
  • the plurality of modules include a dicing module that dices the wafer, an expand module that expands the sheet member to which the wafer is attached, and a wafer supply module that supplies the wafer. , an ablation laser module that laser-ablates the wafer, a cleaning module that cleans the wafer, and a grinding module that grinds the wafer.
  • the number of at least one of the dicing module, the expand module, the wafer supply module, the ablation laser module, the cleaning module, and the grinding module can be adjusted according to the product and user's requests. and can be changed.
  • two or more modules of the same type can be arranged.
  • the processing amount of two or more modules can be increased, so the cycle time for processing the two or more modules is large. In some cases, cycle time imbalances can be easily adjusted.
  • modules of the same type can be placed on one side and on the other side with modules of other types in between.
  • the degree of freedom in arranging the modules can be improved compared to the case where modules of the same type can only be arranged adjacent to each other.
  • the modules are connected along a predetermined direction.
  • the modules are connected along the predetermined direction, it is possible to suppress the device from increasing in size in directions other than the predetermined direction.
  • a common wafer transport unit is further provided that transports the wafer in a predetermined direction between the plurality of modules selected from among the plurality of modules.
  • the wafer transfer section changes the length in the predetermined direction according to the number of the plurality of modules selected from the plurality of modules and connected along the predetermined direction. It is possible. With this configuration, the length of the wafer transfer section can be changed appropriately according to an increase or decrease in the number of modules, so it is easy to realize a configuration in which a common wafer transfer section is provided among multiple modules. be able to.
  • the module includes a dicing module that dices the wafer, and an expand module that expands the sheet member to which the wafer is attached, and expands the first wafer to be diced.
  • a second wafer is independently supplied to a dicing module and an expand module, respectively, and the dicing of the first wafer by the dicing module and the expansion of the sheet member of the second wafer by the expand module are performed independently and in parallel. is configured to do so. With this configuration, even if the dicing cycle time and the expanding cycle time are completely different, dicing and expanding can be smoothly performed without causing any stop time.
  • the module includes a dicing module for dicing the wafer, the dicing module has an imaging section for capturing an image of the wafer, and the dicing module includes a dicing module for dicing the wafer.
  • the wafer is imaged by the imaging unit, and the laser processing is performed based on the imaging result of the wafer by the imaging unit. It is configured to obtain the amount of street positional deviation due to processing, and change the laser processing position from one side of the wafer to the other side or from the other side to one side of the wafer based on the amount of street positional deviation.
  • a method for manufacturing a semiconductor chip according to a second aspect of the present invention includes the steps of installing a module selected from a plurality of modules that perform different types of processing on a wafer on which a plurality of semiconductor chips are formed; and a step of processing a wafer using the modules, and the number of each of the plurality of modules can be changed.
  • the number of each of the plurality of modules can be changed as described above.
  • the cycle time balance of each process is different for each product, which is a processed product of a wafer
  • the equipment configuration can be changed in accordance with the user's request.
  • a semiconductor chip according to a third aspect of the invention includes a module selected from a plurality of modules that perform mutually different types of processing on a wafer on which a plurality of semiconductor chips are formed, and the number of each of the plurality of modules is Manufactured by wafer processing equipment that can be modified.
  • the number of each of the plurality of modules can be changed as described above.
  • the cycle time balance of each process is different for each product, which is a processed product of a wafer
  • the equipment configuration can be changed in accordance with the user's request.
  • an optimal equipment configuration can be constructed as described above.
  • FIG. 1 is a block diagram showing a semiconductor wafer processing apparatus according to an embodiment.
  • FIG. 2 is a plan view showing a wafer ring structure processed in a semiconductor wafer processing apparatus according to an embodiment.
  • 3 is a sectional view taken along line III-III in FIG. 2.
  • FIG. FIG. 1 is a plan view of a first configuration example of a semiconductor wafer processing apparatus according to an embodiment.
  • FIG. 2 is a side view of the dicing module according to one embodiment, viewed from the Y2 direction side.
  • FIG. 2 is a side view of the expand module and wafer supply module according to one embodiment, viewed from the Y2 direction side.
  • FIG. 2 is a side view of the expand module and wafer supply module according to one embodiment, viewed from the X1 direction side.
  • FIG. 1 is a block diagram showing a control configuration of a semiconductor wafer processing apparatus of a first configuration example according to an embodiment
  • FIG. 3 is a flowchart of the first half of the semiconductor chip manufacturing process of the semiconductor wafer processing apparatus of the first configuration example according to one embodiment
  • 2 is a flowchart of the latter half of the semiconductor chip manufacturing process of the semiconductor wafer processing apparatus of the first configuration example according to one embodiment.
  • FIG. 2 is a plan view of a second configuration example of a semiconductor wafer processing apparatus according to an embodiment.
  • FIG. 3 is a plan view of a third configuration example of a semiconductor wafer processing apparatus according to an embodiment.
  • FIG. 7 is a plan view of a fourth configuration example of a semiconductor wafer processing apparatus according to an embodiment.
  • FIG. 7 is a plan view of a fifth configuration example of a semiconductor wafer processing apparatus according to an embodiment.
  • FIG. 6 is a diagram for explaining a change in the length of a wafer transport section according to an embodiment.
  • FIG. 3 is a diagram for explaining laser processing of a dicing module according to an embodiment.
  • FIG. 6 is a diagram for explaining laser processing and panning of a street of a dicing module according to an embodiment.
  • FIG. 3 is a diagram for explaining a panning image of a dicing module according to an embodiment.
  • FIG. 3 is a diagram for explaining a brightness profile based on a panning image of a dicing module according to an embodiment.
  • FIG. 7 is a plan view of an expandable module according to a modified example of one embodiment.
  • FIG. 7 is a side view of an expandable module according to a modified example of the embodiment, viewed from the Y2 direction side.
  • FIG. 7 is a side view of an expandable module according to a modified example of the embodiment when viewed from the X1 direction side.
  • FIGS. 1 to 19 The configuration of a semiconductor wafer processing apparatus 100 according to an embodiment of the present invention will be described with reference to FIGS. 1 to 19. Note that the semiconductor wafer processing apparatus 100 is an example of a "wafer processing apparatus" in the claims.
  • a semiconductor wafer processing apparatus 100 is an apparatus that processes a wafer W1 provided in a wafer ring structure W (see FIG. 2).
  • the semiconductor wafer processing apparatus 100 has a plurality of modules 100a selected from among a plurality of modules 100a that perform mutually different types of processing on the wafer W1 on which a plurality of semiconductor chips Ch (see FIG. 7) are formed.
  • a module 100a is provided.
  • the semiconductor wafer processing apparatus 100 can change the number of each of the plurality of modules 100a.
  • the method for manufacturing semiconductor chips Ch using this semiconductor wafer processing apparatus 100 uses a module 100a selected from a plurality of modules 100a that perform different types of processing on a wafer W1 on which a plurality of semiconductor chips Ch are formed.
  • the method includes a step of installing the module 100a and a step of processing the wafer W1 using the installed module 100a, and the number of each of the plurality of modules 100a can be changed.
  • the semiconductor chips Ch manufactured by this semiconductor wafer processing apparatus 100 are manufactured using a module 100a selected from a plurality of modules 100a that perform different types of processing on the wafer W1 on which a plurality of semiconductor chips Ch are formed. It is manufactured by a semiconductor wafer processing apparatus 100 that includes a plurality of modules 100a and can change the number of each of the plurality of modules 100a.
  • the plurality of modules 100a include a dicing module 1 that dices the wafer W1, an expand module 2 that expands the sheet member W2 to which the wafer W1 is attached, and a wafer supply module 3 that supplies the wafer W1. Contains.
  • the wafer ring structure W includes a wafer W1, a sheet member W2, and a ring-shaped member W3.
  • the wafer W1 is a circular thin plate made of crystalline semiconductor material that is a material for semiconductor integrated circuits.
  • a modified layer is formed inside the wafer W1 by processing the semiconductor wafer in the processing apparatus 100 along the dividing line. That is, the wafer W1 is processed so that it can be divided along the dividing line.
  • the sheet member W2 is an elastic adhesive tape.
  • An adhesive layer is provided on the upper surface W21 of the sheet member W2.
  • the wafer W1 is attached to the adhesive layer of the sheet member W2.
  • the ring-shaped member W3 is a ring-shaped metal frame in plan view. The ring-shaped member W3 is attached to the adhesive layer of the sheet member W2 while surrounding the wafer W1.
  • the vertical direction will be referred to as the Z direction
  • the upper direction will be referred to as the Z1 direction
  • the lower direction will be referred to as the Z2 direction.
  • Two directions that are orthogonal to the Z direction and mutually orthogonal in the horizontal plane are referred to as an X direction and a Y direction, respectively.
  • One side of the X direction is defined as the X1 direction
  • the other side of the X direction is defined as the X2 direction
  • One side of the Y direction is defined as the Y1 direction
  • the other side of the Y direction is defined as the Y2 direction.
  • FIG. 4 shows a first configuration example of the semiconductor wafer processing apparatus 100.
  • the semiconductor wafer processing apparatus 100 of the first configuration example includes one dicing module 1, one expand module 2, and one wafer supply module 3.
  • the dicing module 1, the expand module 2, and the wafer supply module 3 are connected along a predetermined direction (X direction).
  • the dicing module 1 is arranged on the X2 direction side.
  • the expand module 2 is arranged on the X1 direction side.
  • the wafer supply module 3 is placed between the dicing module 1 and the expand module 2 in the X direction.
  • the semiconductor wafer processing apparatus 100 of the first configuration example has a common system for transporting the wafer ring structure W (wafer W1) in a predetermined direction between the dicing module 1, the expand module 2, and the wafer supply module 3.
  • a suction hand section 4 is provided. Note that the suction hand section 4 is an example of a "wafer transfer section" in the claims.
  • the dicing module 1 is configured to form a modified layer by irradiating the wafer W1 with a laser having a wavelength that is transparent to the wafer W1 along dividing lines (streets). has been done.
  • the modified layer refers to cracks, voids, etc. formed inside the wafer W1 by the laser.
  • the method of forming the modified layer on the wafer W1 in this way is called dicing.
  • the dicing module 1 includes a base 11, a chuck table section 12, a laser section 13, and an imaging section 14.
  • the base 11 is a base on which the chuck table section 12 is installed.
  • the base 11 has a rectangular shape in plan view.
  • the chuck table section 12 includes a suction section 12a, a clamp section 12b, a rotation mechanism 12c, and a table movement mechanism 12d.
  • the suction portion 12a is configured to suction the wafer ring structure W onto the upper surface on the Z1 direction side.
  • the suction unit 12a is a table provided with a suction hole, a suction conduit, and the like for suctioning the lower surface of the ring-shaped member W3 of the wafer ring structure W on the Z2 direction side.
  • the suction portion 12a is supported by a table moving mechanism 12d via a rotation mechanism 12c.
  • the clamp part 12b is provided at the upper end of the suction part 12a.
  • the clamp part 12b is configured to hold down the wafer ring structure W attracted by the attraction part 12a.
  • the clamp part 12b holds down the ring-shaped member W3 of the wafer ring structure W that is attracted by the attraction part 12a from the Z1 direction side. In this way, the wafer ring structure W is held by the suction part 12a and the clamp part 12b.
  • the rotation mechanism 12c is configured to rotate the suction portion 12a in the circumferential direction around a rotation center axis C extending parallel to the Z direction.
  • the rotation mechanism 12c is attached to the upper end of the table moving mechanism 12d.
  • the table moving mechanism 12d is configured to move the wafer ring structure W in the X direction and the Y direction.
  • the table moving mechanism 12d includes an X-direction moving mechanism 121 and a Y-direction moving mechanism 122.
  • the X-direction moving mechanism 121 is configured to move the rotation mechanism 12c in the X1 direction or the X2 direction.
  • the X-direction movement mechanism 121 includes, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.
  • the Y-direction moving mechanism 122 is configured to move the rotation mechanism 12c in the Y1 direction or the Y2 direction.
  • the Y-direction movement mechanism 122 includes, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.
  • the laser section 13 is configured to irradiate the wafer W1 of the wafer ring structure W held by the chuck table section 12 with laser light.
  • the laser section 13 is arranged on the Z1 direction side of the chuck table section 12.
  • the laser section 13 includes a laser irradiation section 13a, a mounting member 13b, and a Z-direction moving mechanism 13c.
  • the laser irradiation section 13a is configured to irradiate pulsed laser light.
  • the attachment member 13b is a frame to which the laser section 13 and the imaging section 14 are attached.
  • the Z direction moving mechanism 13c is configured to move the laser section 13 in the Z1 direction or the Z2 direction.
  • the Z-direction movement mechanism 13c includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder.
  • the laser irradiation unit 13a may be a laser irradiation unit that oscillates continuous wave laser light other than pulsed laser light as laser light, as long as it can form a modified layer by multiphoton absorption.
  • the imaging unit 14 is configured to take an image of the wafer W1 of the wafer ring structure W held by the chuck table unit 12.
  • the imaging section 14 is arranged on the Z1 direction side of the chuck table section 12.
  • the imaging unit 14 includes a high-resolution camera 14a, a wide-angle camera 14b, a Z-direction moving mechanism 14c, and a Z-direction moving mechanism 14d.
  • the high-resolution camera 14a and wide-angle camera 14b are near-infrared imaging cameras.
  • the high-resolution camera 14a has a narrower viewing angle than the wide-angle camera 14b.
  • the high-resolution camera 14a has higher resolution than the wide-angle camera 14b.
  • the wide-angle camera 14b has a wider viewing angle than the high-resolution camera 14a.
  • the wide-angle camera 14b has lower resolution than the high-resolution camera 14a.
  • the high-resolution camera 14a is arranged on the X1 direction side of the laser irradiation section 13a.
  • the wide-angle camera 14b is arranged on the X2 direction side of the laser irradiation section 13a. In this way, the high-resolution camera 14a, the laser irradiation section 13a, and the wide-angle camera 14b are arranged adjacent to each other in this order from the X1 direction to the X2 direction.
  • the Z direction moving mechanism 14c is configured to move the high resolution camera 14a in the Z1 direction or the Z2 direction.
  • the Z-direction movement mechanism 14c includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder.
  • the Z-direction moving mechanism 14d is configured to move the wide-angle camera 14b in the Z1 direction or the Z2 direction.
  • the Z-direction movement mechanism 14d includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder.
  • the expand module 2 is configured to divide the wafer W1 to form a plurality of semiconductor chips Ch. Further, the expandable module 2 is configured to form a sufficient gap between the plurality of semiconductor chips Ch.
  • a modified layer is formed on the wafer W1 by irradiating the wafer W1 with a laser having a wavelength that is transparent to the wafer W1 along a dividing line (street) in the dicing module 1.
  • a plurality of semiconductor chips Ch are formed by dividing the wafer W1 along the modified layer formed in advance in the dicing module 1.
  • the wafer W1 is divided along the modified layer by expanding the sheet member W2. Moreover, in the expandable module 2, by expanding the sheet member W2, the gaps between the plurality of divided semiconductor chips Ch are widened.
  • the expand module 2 includes a base 205, a cold air supply section 206, a cooling unit 207, an expand section 208, a base 209, an expansion maintenance member 210, a heat shrink section 211, an ultraviolet irradiation section 212, and a squeegee section 213. and a clamp section 214.
  • the base 205 is a base on which the expanding section 208, the cooling unit 207, the ultraviolet irradiation section 212, and the squeegee section 213 are installed.
  • the base 205 has a rectangular shape in plan view.
  • the clamp part 214 disposed at a position in the Z1 direction of the cooling unit 207 is shown by a dotted line.
  • the cold air supply unit 206 is configured to supply cold air to the sheet member W2 from the Z1 direction side when the expanding unit 208 expands the sheet member W2.
  • the cold air supply section 206 includes a supply section main body 206a, a cold air supply port 206b, and a moving mechanism 206c.
  • the cold air supply port 206b is configured to allow the cold air supplied from the cold air supply device to flow out.
  • the cold air supply port 206b is provided at the end of the supply section main body 206a on the Z2 direction side.
  • the cold air supply port 206b is arranged at the center of the end of the supply section main body 206a on the Z2 direction side.
  • the moving mechanism 206c includes, for example, a linear conveyor module or a motor with a ball screw and an encoder.
  • the cold air supply device is a device for generating cold air.
  • the cold air supply device supplies air cooled by, for example, a heat pump.
  • a cold air supply device is installed on the base 205.
  • the cold air supply unit 206 and the cold air supply device are connected through a hose (not shown).
  • the cooling unit 207 is configured to cool the sheet member W2 from the Z2 direction side.
  • the cooling unit 207 includes a cooling member 207a having a cooling body 271 and a Peltier element 272, and a Z-direction moving mechanism 207b.
  • the cooling body 271 is made of a member having a large heat capacity and high thermal conductivity. Cooling body 271 is made of metal such as aluminum.
  • the Peltier element 272 is configured to cool the cooling body 271. Note that the cooling body 271 is not limited to aluminum, and may be made of other members having a large heat capacity and high thermal conductivity.
  • the Z direction moving mechanism 207b is a cylinder.
  • the cooling unit 207 is configured to be movable in the Z1 direction or the Z2 direction by a Z direction movement mechanism 207b. Thereby, the cooling unit 207 can be moved to a position where it contacts the sheet member W2 and a position where it is spaced apart from the sheet member W2.
  • the expanding section 208 is configured to expand the sheet member W2 of the wafer ring structure W to divide the wafer W1 along the dividing line.
  • the expander 208 has an expander ring 281.
  • the expand ring 281 is configured to expand the sheet member W2 by supporting the sheet member W2 from the Z2 direction side.
  • the expand ring 281 has a ring shape in plan view. Note that the structure of the expand ring 281 will be explained in detail later.
  • the base 209 is a base material on which the cold air supply section 206, the expansion maintenance member 210, and the heat shrink section 211 are installed.
  • the expansion maintaining member 210 is configured to press the sheet member W2 from the Z1 direction side so that the sheet member W2 near the wafer W1 does not shrink due to heating by the heating ring 211a. .
  • the expansion maintaining member 210 includes a pressing ring portion 210a, a lid portion 210b, and an air intake portion 210c.
  • the pressing ring portion 210a has a ring shape in plan view.
  • the lid portion 210b is provided on the press ring portion 210a so as to close the opening of the press ring portion 210a.
  • the intake portion 210c is an intake ring having a ring shape when viewed from above. A plurality of intake ports are formed on the lower surface of the intake portion 210c on the Z2 direction side.
  • the press ring portion 210a is configured to move in the Z direction by a Z direction moving mechanism 210d.
  • the Z direction moving mechanism 210d is configured to move the pressing ring portion 210a to a position where it presses the sheet member W2 and a position away from the sheet member W2.
  • the Z-direction movement mechanism 210d includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder.
  • the heat shrink section 211 is configured to shrink the sheet member W2 expanded by the expand section 208 by heating while maintaining gaps between the plurality of semiconductor chips Ch.
  • the heat shrink part 211 has a heating ring 211a and a Z-direction moving mechanism 211b.
  • the heating ring 211a has a ring shape in plan view.
  • the heating ring 211a has a sheathed heater that heats the sheet member W2.
  • the Z direction moving mechanism 211b is configured to move the heating ring 211a in the Z direction.
  • the Z-direction movement mechanism 211b includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder.
  • the ultraviolet irradiation unit 212 is configured to irradiate the sheet member W2 with ultraviolet rays in order to reduce the adhesive force of the adhesive layer of the sheet member W2.
  • the ultraviolet irradiation unit 212 includes ultraviolet lighting.
  • the ultraviolet irradiation section 212 is arranged at the end of the pressing section 213a of the squeegee section 213 on the Z1 direction side, which will be described later.
  • the ultraviolet irradiation section 212 is configured to irradiate the sheet member W2 with ultraviolet rays while moving together with the squeegee section 213.
  • the squeegee section 213 is configured to further divide the wafer W1 along the modified layer by locally pressing the wafer W1 from the Z2 direction side after expanding the sheet member W2.
  • the squeegee section 213 includes a pressing section 213a, a Z direction movement mechanism 213b, an X direction movement mechanism 213c, and a rotation mechanism 213d.
  • the pressing section 213a presses the wafer W1 from the Z2 direction side via the sheet member W2 and is moved by the rotating mechanism 213d and the X direction moving mechanism 213c, thereby generating bending stress on the wafer W1 and removing the modified layer.
  • the wafer W1 is configured to be divided along the wafer W1.
  • the pressing portion 213a is raised to the raised position in the Z1 direction by the Z direction moving mechanism 213b, the wafer W1 is pressed through the sheet member W2.
  • the pressing portion 213a is lowered in the Z2 direction to the lowered position by the Z direction moving mechanism 213b, so that the wafer W1 is no longer pressed.
  • the pressing part 213a is a squeegee.
  • the pressing part 213a is attached to the end of the Z1-direction side of the Z-direction moving mechanism 213b.
  • the Z direction moving mechanism 213b is configured to move the pressing part 213a linearly in the Z1 direction or the Z2 direction.
  • the Z direction moving mechanism 213b is, for example, a cylinder.
  • the Z direction moving mechanism 213b is attached to the end of the X direction moving mechanism 213c on the Z1 direction side.
  • the X-direction moving mechanism 213c is attached to the end of the rotation mechanism 213d on the Z1 direction side.
  • the X-direction moving mechanism 213c is configured to linearly move the pressing portion 213a in one direction.
  • the X-direction movement mechanism 213c includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder.
  • the pressing portion 213a is raised to the raised position by the Z direction moving mechanism 213b.
  • the pressing part 213a locally presses the wafer W1 from the Z2 direction side via the sheet member W2, and the pressing part 213a moves in the Y direction by the X direction moving mechanism 213c, thereby moving the wafer W1. be divided.
  • the pressing portion 213a is lowered to the lowered position by the Z direction moving mechanism 213b.
  • the pressing section 213a is rotated by 90 degrees by the rotation mechanism 213d.
  • the pressing portion 213a is raised to the raised position by the Z direction moving mechanism 213b.
  • the pressing part 213a after the pressing part 213a rotates 90 degrees, the pressing part 213a locally presses the wafer W1 from the Z2 direction side via the sheet member W2, and the pressing part 213a is moved by the X direction moving mechanism 213c. By moving in the X direction, wafer W1 is divided.
  • the clamp portion 214 is configured to grip the ring-shaped member W3 of the wafer ring structure W.
  • the clamp section 214 includes a grip section 214a, a Z direction movement mechanism 214b, and a Y direction movement mechanism 214c.
  • the grip portion 214a supports the ring-shaped member W3 from the Z2 direction side, and holds the ring-shaped member W3 from the Z1 direction side. In this way, the ring-shaped member W3 is held by the gripping portion 214a.
  • the grip portion 214a is attached to a Z-direction moving mechanism 214b.
  • the Z direction moving mechanism 214b is configured to move the clamp portion 214 in the Z direction. Specifically, the Z direction moving mechanism 214b is configured to move the grip portion 214a in the Z1 direction or the Z2 direction.
  • the Z-direction movement mechanism 214b includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder.
  • the Z direction moving mechanism 214b is attached to the Y direction moving mechanism 214c.
  • the Y direction moving mechanism 214c is configured to move the Z direction moving mechanism 214b in the Y1 direction or the Y2 direction.
  • the Y-direction movement mechanism 214c includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder.
  • the wafer supply module 3 includes a base 201, a cassette section 202, and a lift-up hand section 203.
  • the base 201 is a base on which the cassette section 202 and the lift-up hand section 203 are installed.
  • the base 201 has a rectangular shape in plan view.
  • the cassette section 202 is configured to be able to accommodate a plurality of wafer ring structures W (wafers W1).
  • the cassette section 202 includes a wafer cassette 202a, a Z-direction moving mechanism 202b, and a pair of mounting sections 202c.
  • a plurality (three) of wafer cassettes 202a are arranged in the Z direction.
  • the wafer cassette 202a has an accommodation space that can accommodate a plurality (five) of wafer ring structures W.
  • the wafer ring structure W is manually supplied and placed on the wafer cassette 202a.
  • the wafer cassette 202a may accommodate one to four wafer ring structures W, or may accommodate six or more wafer ring structures W. Further, one, two, four or more wafer cassettes 202a may be arranged in the Z direction.
  • the Z direction moving mechanism 202b is configured to move the wafer cassette 202a in the Z1 direction or the Z2 direction.
  • the Z-direction movement mechanism 202b includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder. Further, the Z-direction moving mechanism 202b includes a mounting table 202d that supports the wafer cassette 202a from below. A plurality (three) of mounting tables 202d are arranged in accordance with the positions of the plurality of wafer cassettes 202a.
  • a plurality (five) of the pair of placement parts 202c are arranged inside the wafer cassette 202a.
  • the ring-shaped member W3 of the wafer ring structure W is placed on the pair of placement parts 202c from the Z1 direction side.
  • One of the pair of placement parts 202c protrudes in the X2 direction from the inner surface of the wafer cassette 202a on the X1 direction.
  • the other of the pair of placement parts 202c protrudes in the X1 direction from the inner surface of the wafer cassette 202a on the X2 direction.
  • the lift-up hand section 203 is configured to be able to take out the wafer ring structure W from the cassette section 202. Further, the lift-up hand section 203 is configured to be able to accommodate the wafer ring structure W in the cassette section 202.
  • the lift-up hand section 203 includes a Y-direction moving mechanism 203a and a lift-up hand 203b.
  • the Y-direction movement mechanism 203a includes, for example, a linear conveyor module or a drive unit including a ball screw and a motor with an encoder.
  • the lift-up hand 203b is configured to support the ring-shaped member W3 of the wafer ring structure W from the Z2 direction side.
  • the suction hand section 4 is configured to suction the ring-shaped member W3 of the wafer ring structure W from the Z1 direction side.
  • the suction hand section 4 includes an X-direction movement mechanism 204a, a Z-direction movement mechanism 204b, and a suction hand 204c.
  • the X-direction moving mechanism 204a is configured to move the suction hand 204c in the X-direction.
  • the Z direction moving mechanism 204b is configured to move the suction hand 204c in the Z direction.
  • the X-direction movement mechanism 204a and the Z-direction movement mechanism 204b have, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.
  • the suction hand 204c is configured to suction and support the ring-shaped member W3 of the wafer ring structure W from the Z1 direction side.
  • the ring-shaped member W3 of the wafer ring structure W is supported by the suction hand 204c by generating negative pressure.
  • the semiconductor wafer processing apparatus 100 of the first configuration example includes a first control section 101, a second control section 102, a third control section 103, a fourth control section 104, and a fifth control section 101. It includes a control section 105, a sixth control section 106, a seventh control section 107, an eighth control section 108, an expansion control calculation section 109, a handling control calculation section 110, and a dicing control calculation section 111.
  • the first control section 101 is configured to control the squeegee section 213.
  • the first control unit 101 includes a CPU (Central Processing Unit), and a storage unit including a ROM (Read Only Memory), a RAM (Random Access Memory), and the like.
  • the first control unit 101 may include, as a storage unit, an HDD (Hard Disk Drive) or the like that retains stored information even after the voltage is cut off.
  • the HDD also includes a first control section 101, a second control section 102, a third control section 103, a fourth control section 104, a fifth control section 105, a sixth control section 106, a seventh control section 107, and a third control section 103. It may be provided in common for eight control units 108.
  • the second control section 102 is configured to control the cold air supply section 206 and the cooling unit 207.
  • the second control unit 102 includes a CPU and a storage unit including ROM, RAM, and the like.
  • the third control section 103 is configured to control the heat shrink section 211 and the ultraviolet irradiation section 212.
  • the third control unit 103 includes a CPU and a storage unit including ROM, RAM, and the like. Note that the second control unit 102 and the third control unit 103 may include, as a storage unit, an HDD or the like that retains stored information even after the voltage is cut off.
  • the fourth control section 104 is configured to control the cassette section 202 and the lift-up hand section 203.
  • the fourth control unit 104 includes a CPU and a storage unit including ROM, RAM, and the like.
  • the fifth control section 105 is configured to control the suction hand section 4.
  • the fifth control unit 105 includes a CPU and a storage unit including ROM, RAM, and the like. Note that the fourth control unit 104 and the fifth control unit 105 may include, as a storage unit, an HDD or the like in which stored information is retained even after the voltage is cut off.
  • the sixth control section 106 is configured to control the chuck table section 12.
  • the sixth control unit 106 includes a CPU and a storage unit including ROM, RAM, and the like.
  • the seventh control section 107 is configured to control the laser section 13.
  • the seventh control unit 107 includes a CPU and a storage unit including ROM, RAM, and the like.
  • the eighth control unit 108 is configured to control the imaging unit 14.
  • the eighth control unit 108 includes a CPU and a storage unit including ROM, RAM, and the like. Note that the sixth control unit 106, the seventh control unit 107, and the eighth control unit 108 may include, as a storage unit, an HDD or the like in which stored information is retained even after the voltage is cut off.
  • the expansion control calculation unit 109 is configured to perform calculations related to the expansion process of the sheet member W2 based on the processing results of the first control unit 101, the second control unit 102, and the third control unit 103.
  • the expansion control calculation unit 109 includes a CPU and a storage unit including a ROM, a RAM, and the like.
  • the handling control calculation unit 110 is configured to perform calculations related to the movement process of the wafer ring structure W based on the processing results of the fourth control unit 104 and the fifth control unit 105.
  • Handling control calculation unit 110 includes a CPU and a storage unit including ROM, RAM, and the like.
  • the dicing control calculation unit 111 is configured to perform calculations related to the dicing process of the wafer W1 based on the processing results of the sixth control unit 106, the seventh control unit 107, and the eighth control unit 108.
  • the dicing control calculation unit 111 includes a CPU and a storage unit including a ROM, a RAM, and the like.
  • the storage unit 112 stores programs for operating the dicing module 1, the expand module 2, the wafer supply module 3, and the suction hand unit 4.
  • the storage unit 112 includes ROM, RAM, HDD, and the like.
  • step S1 the wafer ring structure W is taken out from the cassette section 202. That is, after the wafer ring structure W housed in the cassette part 202 is supported by the lift-up hand 203b, the lift-up hand 203b is moved in the Y1 direction by the Y-direction moving mechanism 203a, thereby removing the wafer from the cassette part 202. The ring structure W is taken out.
  • step S2 the wafer ring structure W is transferred to the chuck table section 12 of the dicing module 1 by the suction hand 204c. That is, the wafer ring structure W taken out from the cassette section 202 is moved in the X2 direction by the X direction moving mechanism 204a while being sucked by the suction hand 204c. Then, the wafer ring structure W that has moved in the X2 direction is transferred from the suction hand 204c to the chuck table section 12, and then gripped by the chuck table section 12.
  • step S3 a modified layer is formed on the wafer W1 by the laser unit 13.
  • step S4 the wafer ring structure W having the wafer W1 on which the modified layer has been formed is transferred to the clamp section 214 by the suction hand 204c.
  • step S5 the sheet member W2 is cooled by the cold air supply section 206 and the cooling unit 207. That is, the Z-direction moving mechanism 214b moves (lowers) the wafer ring structure W held by the clamp part 214 in the Z2 direction to contact the cooling unit 207, and the cold air supply part 206 supplies cold air from the Z1 direction side. By doing so, the sheet member W2 is cooled.
  • step S6 the wafer ring structure W is moved to the expanding section 208 by the clamping section 214. That is, the wafer ring structure W, in which the sheet member W2 has been cooled, is moved in the Y1 direction by the Y direction moving mechanism 214c while being held by the clamp part 214.
  • step S7 the expanding section 208 expands the sheet member W2. That is, the wafer ring structure W is moved in the Z2 direction by the Z direction moving mechanism 214b while being held by the clamp part 214. Then, the sheet member W2 contacts the expand ring 281 and is expanded by being pulled by the expand ring 281. Thereby, the wafer W1 is divided along the dividing line (modified layer).
  • step S8 the expanded sheet member W2 is held down by the expansion maintaining member 210 from the Z1 direction side. That is, the press ring portion 210a is moved (downward) in the Z2 direction by the Z direction moving mechanism 210d until it comes into contact with the sheet member W2. Then, the process proceeds from point A in FIG. 9 to point A in FIG. 10 to step S9.
  • step S9 after the sheet member W2 is pressed by the expansion maintaining member 210, the ultraviolet ray irradiation unit 212 irradiates the sheet member W2 with ultraviolet rays while pressing the wafer W1 with the squeegee unit 213. As a result, the wafer W1 is further divided by the squeegee section 213. Further, the adhesive strength of the sheet member W2 is reduced by the ultraviolet rays irradiated from the ultraviolet irradiation section 212.
  • step S10 the heat shrink section 211 heats and shrinks the sheet member W2, and the clamp section 214 rises. At this time, the air intake portion 210c sucks air near the heated sheet member W2.
  • step S11 the wafer ring structure W is transferred from the clamp section 214 to the suction hand 204c. That is, the wafer ring structure W is moved in the Y2 direction by the Y direction moving mechanism 214c while being held by the clamp part 214. Then, after the wafer ring structure W is released from the grip by the clamp part 214 at a position on the Z1 direction side of the cooling unit 207, it is sucked by the suction hand 204c.
  • step S12 the wafer ring structure W is transferred to the lift-up hand 203b by the suction hand 204c.
  • step S13 the wafer ring structure W is accommodated in the cassette section 202. That is, the wafer ring structure W supported by the lift-up hand 203b is moved in the Y1 direction by the Y direction moving mechanism 203a, so that the wafer ring structure W is accommodated in the cassette portion 202.
  • the processing performed on one wafer ring structure W is completed. Then, the process returns to step S1 from point B in FIG. 10 to point B in FIG.
  • FIG. 11 shows a second configuration example of the semiconductor wafer processing apparatus 100.
  • the semiconductor wafer processing apparatus 100 of the second configuration example includes one expand module 2 and one wafer supply module 3.
  • the expand module 2 and the wafer supply module 3 are connected along a predetermined direction (X direction).
  • the expand module 2 is arranged on the X1 direction side.
  • the wafer supply module 3 is arranged on the X2 direction side.
  • the semiconductor wafer processing apparatus 100 of the second configuration example has a common suction hand section 4 that transports the wafer ring structure W (wafer W1) in a predetermined direction between the expand module 2 and the wafer supply module 3. Be prepared.
  • FIG. 12 shows a third configuration example of the semiconductor wafer processing apparatus 100.
  • the semiconductor wafer processing apparatus 100 of the third configuration example includes one dicing module 1 and one wafer supply module 3.
  • the dicing module 1 and the wafer supply module 3 are connected along a predetermined direction (X direction).
  • the dicing module 1 is arranged on the X2 direction side.
  • the wafer supply module 3 is arranged on the X1 direction side.
  • the semiconductor wafer processing apparatus 100 of the third configuration example includes a common suction hand section 4 that transports the wafer ring structure W (wafer W1) in a predetermined direction between the dicing module 1 and the wafer supply module 3. Be prepared.
  • FIG. 13 shows a fourth configuration example of the semiconductor wafer processing apparatus 100.
  • the semiconductor wafer processing apparatus 100 of the fourth configuration example includes one dicing module 1.
  • a wafer ring structure W (wafer W1) is manually supplied to the dicing module 1 by an operator.
  • FIG. 14 shows a fifth configuration example of the semiconductor wafer processing apparatus 100.
  • the semiconductor wafer processing apparatus 100 of the fifth configuration example includes two dicing modules 1, one expand module 2, and two wafer supply modules 3.
  • two dicing modules 1 of the same type and two wafer supply modules 3 of the same type are arranged. Furthermore, the two dicing modules 1, one expand module 2, and two wafer supply modules 3 are connected along a predetermined direction (X direction).
  • One of the two dicing modules 1 is placed closest to the X2 direction side.
  • the other of the two dicing modules 1 is disposed closest to the X1 direction side.
  • two dicing modules 1 of the same type are arranged on one side and the other side with an expand module 2 and a wafer supply module 3 of another type in between.
  • the expand module 2 and the two wafer supply modules 3 are arranged between the two dicing modules 1 in this order from the X1 direction toward the X2 direction.
  • the semiconductor wafer processing apparatus 100 of the fifth configuration example has a wafer ring structure in a predetermined direction (X direction) between two dicing modules 1, one expand module 2, and two wafer supply modules 3.
  • a common suction hand section 4 for transporting W (wafer W1) is provided.
  • the semiconductor wafer processing apparatus 100 can arrange two or more modules 100a of the same type. Further, in the present embodiment, the semiconductor wafer processing apparatus 100 can arrange modules 100a of the same type on one side and the other side with a module 100a of another type interposed therebetween. Furthermore, as explained in the first to third and fifth configuration examples above, in this embodiment, the semiconductor wafer processing apparatus 100 operates in a predetermined direction between a plurality of modules 100a selected from among a plurality of modules 100a.
  • a common suction hand section 4 is provided for transporting the wafer ring structure W (wafer W1) in the X direction.
  • the X-direction moving mechanism 204a of the suction hand section 4 is arranged so as to straddle all of the plurality of modules 100a selected from the plurality of modules 100a and connected along a predetermined direction.
  • the suction hand section 4 has a length in a predetermined direction depending on the number of the plurality of modules 100a connected along the predetermined direction (X direction) selected from the plurality of modules 100a. can be changed. Specifically, the suction hand section 4 can change the length of the X-direction moving mechanism 204a according to the number of the plurality of modules 100a selected from the plurality of modules 100a and connected along a predetermined direction. It is.
  • the X-direction movement mechanism 204a includes a linear conveyor module 40.
  • the linear conveyor module 40 is a conveyance device that moves the slider 50 in a predetermined direction (X direction).
  • the linear conveyor module 40 has a linear motor stator extending in a predetermined direction.
  • the slider 50 has a linear motor mover.
  • a linear motor is configured by a linear motor stator and a linear motor mover.
  • magnetic interaction between the linear motor stator of the linear conveyor module 40 and the linear motor mover of the slider 50 generates a magnetic propulsive force that moves the slider 50 in a predetermined direction.
  • a suction hand 204c is connected to the slider 50 via a Z-direction moving mechanism 204b.
  • the linear conveyor module 40 is configured so that a plurality of them can be connected in a predetermined direction via a connecting member 61.
  • the linear conveyor module 40 has a mounting portion 41 to which a connecting member 61 is attached.
  • the attachment portions 41 are provided at both ends of the linear conveyor module 40 in the X direction.
  • an end member 62 is attached to the end-side attachment portion 41 of the linear conveyor module 40 that is disposed at the end of the linear conveyor modules 40 to be connected.
  • the semiconductor wafer processing apparatus 100 performs dicing (forming a modified layer) on the wafer W1 (hereinafter referred to as A wafer W1 (hereinafter referred to as a first wafer W1) and a wafer W1 to be expanded (hereinafter referred to as a second wafer W1) are independently supplied to a dicing module 1 and an expand module 2. (formation of a solid layer) and the expansion of the sheet member W2 of the second wafer W1 by the expansion module 2 are performed independently and in parallel.
  • the plurality of wafer cassettes 202a of the wafer supply module 3 are a wafer cassette 202a (hereinafter referred to as the first wafer cassette 202a) in which only the wafer ring structure W including the first wafer W1 is arranged, and a second wafer cassette 202a (hereinafter referred to as the first wafer cassette 202a).
  • the wafer ring structure W includes a wafer cassette 202a (hereinafter referred to as a second wafer cassette 202a) in which only the wafer ring structure W including the wafer ring structure W is arranged.
  • the wafer supply module 3 is configured to supply the wafer ring structure W including the undiced first wafer W1 from the first wafer cassette 202a to the dicing module 1 via the suction hand section 204. .
  • the dicing module 1 is configured to form a modified layer on the first wafer W1 of the supplied wafer ring structure W.
  • the dicing module 1 also returns the wafer ring structure W including the first wafer W1 on which the modified layer has been formed to the first wafer cassette 202a of the wafer supply module 3 via the suction hand section 204. It is configured. At this time, the wafer ring structure W including the first wafer W1 on which the modified layer is formed is not supplied to the expand module 2.
  • the wafer supply module 3 receives the wafer ring structure W including the second wafer W1 on which the modified layer is formed but is not expanded from the second wafer cassette 202a via the suction hand section 204. It is configured to supply the expand module 2.
  • the expansion module 2 is configured to expand the sheet member W2 of the supplied wafer ring structure W. Further, the expand module 2 returns the wafer ring structure W including the expanded sheet member W2 and the divided second wafer W1 to the second wafer cassette 202a of the wafer supply module 3 via the suction hand section 204. is configured to do so.
  • the formation of the modified layer on the first wafer W1 and the expansion of the sheet member W2 on the second wafer W1 are performed independently and in parallel.
  • the dicing module 1 performs laser processing on the street St from one side (Y2 direction side) of the wafer W1, and performs laser processing on the street St from the other side (Y1 direction side) of the wafer W1.
  • the structure is such that the laser processing is repeated.
  • FIG. 16 shows only the street St where laser processing was performed.
  • FIG. 16 shows an example in which laser processing is performed on the street St in one direction, the wafer W1 is rotated by 90 degrees by the rotation mechanism 12c, and the street St is perpendicular to the one direction. Laser processing is also performed on the street St in the other direction.
  • the dicing module 1 moves the wafer W1 in the X direction using the X direction moving mechanism 121, thereby moving the laser beam from the laser unit 13 in the X direction relative to the street St. It is configured to perform laser processing on St. Further, the dicing module 1 is configured to move the wafer W1 in the Y direction by the Y direction moving mechanism 122, thereby moving the laser section 13 relatively to a position above the next street St.
  • Correction of the positional deviation of the street St means, for example, acquiring the positional deviation amount of the street St by imaging the surface of the wafer W1 with the imaging unit 14, and when the obtained positional deviation amount of the street St is equal to or greater than a threshold value. In this case, the wafer W1 is moved by the chuck table section 12 to correct the position of the street St.
  • the dicing module 1 images the wafer W1 with the imaging unit 14, and based on the imaging result of the wafer W1 by the imaging unit 14, the dicing module 1 performs a street St by laser processing.
  • the positional deviation amount Am of the street St is obtained, and the laser processing position is changed from one side of the wafer W1 to the other side or from the other side to one side based on the positional deviation amount Am of the street St. That is, the dicing module 1 is configured to determine the timing of changing the laser processing position of the wafer W1 from one side to the other side or from the other side to one side based on the positional deviation amount Am of the street St. .
  • the dicing module 1 moves the laser beam from the laser unit 13 in the X direction relative to the street St, and performs laser processing on the street St. It is configured to acquire a panning image G by continuing to expose the unprocessed side of the high-resolution camera 14a and wide-angle camera 14b that are relatively moved in the X direction. For example, when laser processing is performed from the X1 direction side to the X2 direction side, a panning image G is acquired by the high resolution camera 14a arranged on the X2 direction side with respect to the laser unit 13.
  • a panning image G is acquired by the wide-angle camera 14b arranged on the X1 direction side with respect to the laser unit 13.
  • the panning image G an image of the unprocessed street St is acquired.
  • the exposure of the high-resolution camera 14a or the wide-angle camera 14b may be performed in the entire section of one street St, or may be performed in a partial section of one street St.
  • the panning image G may be acquired for each street St, or for each of a plurality of streets St (such as two streets). If the panning is performed every even number of images, such as every two images, the panning image G is acquired only by either the high-resolution camera 14a or the wide-angle camera 14b.
  • the dicing module 1 averages the luminance of pixels in the panning image G, which is a two-dimensional image in which pixels are arranged in the X and Y directions, in the X direction, thereby obtaining a one-dimensional image in which pixels are arranged in the Y direction. At the same time, it is configured to obtain a brightness profile P based on the obtained one-dimensional image. Further, the dicing module 1 is configured to obtain, based on the brightness profile P, the center position in the Y direction of the portion Stc of the brightness profile P corresponding to the street St as the center position Ps in the Y direction of the street St. There is.
  • the dicing module 1 also determines the center position Ps of the street St in the Y direction and the center position Pc of the camera (high-resolution camera 14a or wide-angle camera 14b) in the Y direction (that is, the center position of the brightness profile P in the Y direction). ) is configured to be obtained as the positional deviation amount Am of the street St.
  • the dicing module 1 is configured to, for example, change the laser processing position from one side of the wafer W1 to the other side or from the other side to one side when the positional deviation amount Am of the street St is equal to or greater than a threshold value. There is. That is, when the dicing module 1 performs laser processing on the street St from one side of the wafer W1, if it is detected that the misalignment amount Am of the street St is equal to or greater than the threshold value, the dicing module 1 performs laser processing on the street St from one side of the wafer W1. The laser processing position is changed from one side of the wafer W1 to the other side, and the laser processing is performed on the street St from the other side of the wafer W1.
  • the dicing module 1 controls the wafer W1.
  • the laser processing position is changed from the other side to one side of the wafer W1, and the laser processing is performed on the street St from one side of the wafer W1.
  • the threshold value is smaller than the threshold value for correcting the positional deviation, and the laser processing position is changed at a timing that does not require correction of the positional deviation.
  • the semiconductor wafer processing apparatus 100 can change the number of each of the plurality of modules 100a.
  • the number of each of the plurality of modules 100a can be changed, so that, for example, when the cycle time of each process is different for each product that is a processed product of the wafer W1, the cycle time of each process for each product is different. It is possible to change the equipment configuration according to the time. Additionally, if there is a user's request to change the length of unmanned operation time, such as increasing the length of unmanned operation time at night when there are fewer workers, it is possible to change the equipment configuration according to the user's request. I can do it. As a result, even if the optimal equipment configuration differs depending on the product or the user's request, the optimal equipment configuration can be constructed.
  • the plurality of modules 100a include the dicing module 1 that dices the wafer W1, the expand module 2 that expands the sheet member W2 to which the wafer W1 is attached, and the expand module 2 that supplies the wafer W1.
  • two or more modules 100a of the same type can be arranged.
  • the processing amount of two or more modules 100a can be increased, so if the processing cycle time of two or more modules 100a is large.
  • imbalances in cycle time can be easily adjusted.
  • modules 100a of the same type can be placed on one side and the other side with the module 100a of another type interposed therebetween.
  • the degree of freedom in arranging the modules 100a can be improved compared to the case where modules 100a of the same type can only be arranged adjacently.
  • the modules 100a are connected along a predetermined direction. Therefore, since the modules 100a are connected along the predetermined direction, it is possible to suppress the device from increasing in size in directions other than the predetermined direction.
  • the semiconductor wafer processing apparatus 100 includes a common suction hand unit 4 that transports the wafer W1 in a predetermined direction between a plurality of modules 100a selected from among the plurality of modules 100a. Equipped with Accordingly, since the suction hand section 4 is common among the plurality of modules 100a, the complexity of the structure can be suppressed compared to the case where the suction hand section 4 is provided for each module 100a.
  • the suction hand section 4 has a length in a predetermined direction depending on the number of the plurality of modules 100a selected from the plurality of modules 100a and connected along the predetermined direction. It is possible to change the As a result, the length of the suction hand section 4 can be appropriately changed according to an increase or decrease in the number of modules 100a, so a configuration in which a common suction hand section 4 is provided among a plurality of modules 100a can be easily realized. be able to.
  • the module 100a includes the dicing module 1 that dices the wafer W1, and the expand module 2 that expands the sheet member W2 to which the wafer W1 is attached.
  • the wafer W1 and the second wafer W1 to be expanded are independently supplied to the dicing module 1 and the expand module 2, and the dicing module 1 dices the first wafer W1 and the expand module 2 performs dicing of the second wafer W1. It is configured to perform the expansion of W2 independently and in parallel. Thereby, even if the cycle time of dicing and the cycle time of expansion are completely different, dicing and expansion can be smoothly performed without causing any downtime.
  • the module 100a includes the dicing module 1 that dices the wafer W1
  • the dicing module 1 includes the imaging section 14 that captures an image of the wafer W1
  • the dicing module 1 includes the dicing module 1 that dices the wafer W1.
  • the imaging unit 14 images the wafer W1, and Based on the imaging result of the wafer W1 by the section 14, the amount of positional deviation Am of the street St due to laser processing is acquired, and based on the positional deviation amount Am of the street St, the wafer W1 is moved from one side to the other side or from the other side to one side. It is configured to change the laser processing position to the side. As a result, by repeating laser processing on the street St from one side of the wafer W1 and laser processing on the street St from the other side of the wafer W1, it is possible to simply perform laser processing from one side or the other side.
  • the positional deviation of the street St due to laser processing can be reduced, so the number of times the positional deviation of the street St due to laser processing is corrected can be reduced. Furthermore, by changing the laser processing position from one side of the wafer W1 to the other side or from the other side to one side based on the positional deviation amount Am of the street St, the positional deviation amount Am of the street St starts to increase. Since the laser processing position can be changed at an effective timing, the number of times the positional deviation of the street St is corrected can be reduced.
  • the expanded module 302 of the modified example shown in FIGS. 20 to 22 includes a base 205, a cold air supply section 206, a cooling unit 207, an expanded section 3208, a base 209, an expansion maintenance member 210, and a heat shrink section. 211, an ultraviolet irradiation section 212, a squeegee section 3213, and a clamp section 214.
  • the expanding section 3208 is configured to expand the sheet member W2 of the wafer ring structure W to divide the wafer W1 along the dividing line.
  • the expander 3208 includes an expander ring 3281 and a Z-direction moving mechanism 3282.
  • the expand ring 3281 is configured to expand the sheet member W2 by supporting the sheet member W2 from the Z2 direction side.
  • the expand ring 3281 has a ring shape in plan view.
  • the Z direction moving mechanism 3282 is configured to move the expand ring 3281 in the Z1 direction or the Z2 direction.
  • the Z-direction movement mechanism 3282 includes, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.
  • the Z direction movement mechanism 3282 is attached to the base 205.
  • the squeegee section 3213 is configured to further divide the wafer W1 along the modified layer by pressing the wafer W1 from the Z2 direction side after expanding the sheet member W2.
  • the squeegee portion 3213 includes a pressing portion 3213a, an X-direction movement mechanism 3213b, a Z-direction movement mechanism 3213c, and a rotation mechanism 3213d.
  • the pressing section 3213a is moved in the Z1 direction by the Z direction moving mechanism 3213c, and then moved by the rotating mechanism 3213d and the X direction moving mechanism 3213b while pressing the wafer W1 from the Z2 direction side via the sheet member W2. , the wafer W1 is divided along the modified layer by generating bending stress on the wafer W1.
  • the pressing part 3213a is a squeegee.
  • the pressing portion 3213a is attached to the end of the rotation mechanism 3213d on the Z1 direction side.
  • the Z direction moving mechanism 3213c is configured to move the rotation mechanism 3213d in the Z1 direction or the Z2 direction.
  • the Z direction movement mechanism 3213c has, for example, a cylinder.
  • the Z direction moving mechanism 3213c is attached to the end of the X direction moving mechanism 3213b on the Z1 direction side.
  • the X-direction movement mechanism 3213b includes, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.
  • the X-direction moving mechanism 3213b is attached to the end of the base 205 on the Z1 direction side.
  • the pressing portion 3213a presses the wafer W1 from the Z2 direction side via the sheet member W2, and the pressing portion 3213a is moved in the Y direction by the X direction moving mechanism 3213b. By moving in the direction, the wafer W1 is divided. Further, in the squeegee portion 3213, after the pressing portion 3213a finishes moving in the Y direction, the pressing portion 3213a is rotated by 90 degrees by the rotation mechanism 3213d.
  • the pressing portion 3213a presses the wafer W1 from the Z2 direction side via the sheet member W2, and the pressing portion 3213a moves in the X direction by the X direction moving mechanism 3213b. By moving in the direction, the wafer W1 is divided.
  • the module includes a dicing module, an expand module, and a wafer supply module, but the present invention is not limited to this.
  • the module includes a dicing module, an expand module, a wafer supply module, an ablation laser module for laser ablating the wafer, a cleaning module for cleaning the wafer, and a grinding module for grinding the wafer. It may contain at least one of the following. As a result, the number of at least one of the dicing module, the expand module, the wafer supply module, the ablation laser module, the cleaning module, and the grinding module is changed according to the product, user's request, etc. be able to.
  • the ablation laser module is configured to perform laser ablation that melts and sublimates the surface of the wafer by irradiating the wafer with laser light from a laser irradiation unit.
  • the cleaning module is configured to clean dirt on the surface of the wafer by supplying a cleaning liquid to the wafer from a cleaning liquid supply unit.
  • the grinding module is configured to perform grinding to reduce the thickness of the wafer by grinding the wafer using a grinding section.
  • the semiconductor wafer processing apparatus may process a wafer of a wafer structure (a structure including only a wafer and a sheet member) in which a ring-shaped member is not provided.
  • a wafer transfer section may be provided for each module.
  • the wafer transport section was constituted by a suction hand section, but the present invention is not limited to this.
  • the wafer transfer section may be configured by a wafer transfer section other than the suction hand section.
  • the modules were connected along a predetermined direction, but the present invention is not limited to this.
  • the modules may be connected along a predetermined direction and a direction orthogonal to the predetermined direction.
  • control processing may be performed by event-driven processing that executes processing on an event-by-event basis. In this case, it may be completely event-driven, or it may be a combination of event-driven and flow-driven.
  • Dicing module 2 Expand module 3 Wafer supply module 4 Suction hand section (wafer transfer section) 14 Imaging unit 100 Semiconductor wafer processing device (wafer processing device) 100a Module Am Positional deviation amount Ch Semiconductor chip St Street W1 Wafer (1st wafer, 2nd wafer) W2 sheet member

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Dicing (AREA)
PCT/JP2022/019169 2022-04-27 2022-04-27 ウエハ加工装置、半導体チップの製造方法および半導体チップ Ceased WO2023209897A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PCT/JP2022/019169 WO2023209897A1 (ja) 2022-04-27 2022-04-27 ウエハ加工装置、半導体チップの製造方法および半導体チップ
JP2024517843A JP7846752B2 (ja) 2022-04-27 2023-02-03 ウエハ加工装置、半導体チップの製造方法および半導体チップ
PCT/JP2023/003610 WO2023210088A1 (ja) 2022-04-27 2023-02-03 ウエハ加工装置、半導体チップの製造方法および半導体チップ
TW112114670A TWI899562B (zh) 2022-04-27 2023-04-20 晶圓加工裝置、半導體晶片之製造方法及半導體晶片

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/019169 WO2023209897A1 (ja) 2022-04-27 2022-04-27 ウエハ加工装置、半導体チップの製造方法および半導体チップ

Publications (1)

Publication Number Publication Date
WO2023209897A1 true WO2023209897A1 (ja) 2023-11-02

Family

ID=88518316

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/JP2022/019169 Ceased WO2023209897A1 (ja) 2022-04-27 2022-04-27 ウエハ加工装置、半導体チップの製造方法および半導体チップ
PCT/JP2023/003610 Ceased WO2023210088A1 (ja) 2022-04-27 2023-02-03 ウエハ加工装置、半導体チップの製造方法および半導体チップ

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/JP2023/003610 Ceased WO2023210088A1 (ja) 2022-04-27 2023-02-03 ウエハ加工装置、半導体チップの製造方法および半導体チップ

Country Status (3)

Country Link
JP (1) JP7846752B2 (https=)
TW (1) TWI899562B (https=)
WO (2) WO2023209897A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005109324A (ja) * 2003-10-01 2005-04-21 Tokyo Seimitsu Co Ltd レーザーダイシング装置
JP2007235068A (ja) * 2006-03-03 2007-09-13 Tokyo Seimitsu Co Ltd ウェーハ加工方法
JP2010125488A (ja) * 2008-11-28 2010-06-10 Apic Yamada Corp 切断装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3933507B2 (ja) 2002-03-25 2007-06-20 大日本スクリーン製造株式会社 基板搬送装置および基板処理装置
JP2005228771A (ja) 2004-02-10 2005-08-25 Shinko Electric Co Ltd 基板搬送方法、及びその装置
US20100162955A1 (en) * 2008-12-31 2010-07-01 Lawrence Chung-Lai Lei Systems and methods for substrate processing
JP2011018731A (ja) 2009-07-08 2011-01-27 Rayresearch Corp ウェハ分岐搬送装置
JP2013219328A (ja) * 2012-03-13 2013-10-24 Tokyo Electron Ltd 剥離装置、剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体
JP6703785B2 (ja) 2016-05-09 2020-06-03 キヤノン株式会社 基板処理装置、および物品製造方法
JP6802722B2 (ja) * 2017-01-27 2020-12-16 株式会社ディスコ 加工装置
JP7247743B2 (ja) 2019-05-20 2023-03-29 東京エレクトロン株式会社 基板処理装置及び基板処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005109324A (ja) * 2003-10-01 2005-04-21 Tokyo Seimitsu Co Ltd レーザーダイシング装置
JP2007235068A (ja) * 2006-03-03 2007-09-13 Tokyo Seimitsu Co Ltd ウェーハ加工方法
JP2010125488A (ja) * 2008-11-28 2010-06-10 Apic Yamada Corp 切断装置

Also Published As

Publication number Publication date
TWI899562B (zh) 2025-10-01
WO2023210088A1 (ja) 2023-11-02
JP7846752B2 (ja) 2026-04-15
TW202401536A (zh) 2024-01-01
JPWO2023210088A1 (https=) 2023-11-02

Similar Documents

Publication Publication Date Title
JP7798680B2 (ja) ウエハ加工装置、半導体チップの製造方法および半導体チップ
JP6087707B2 (ja) テープ拡張装置
JP2024110735A (ja) ウエハマウント装置、半導体チップおよび半導体チップの製造方法
TW201839834A (zh) 切割裝置
JP7804522B2 (ja) エキスパンド装置、および、半導体チップの製造方法
WO2023042260A1 (ja) エキスパンド装置
JP7817377B2 (ja) ダイシング装置、半導体チップの製造方法および半導体チップ
WO2023209897A1 (ja) ウエハ加工装置、半導体チップの製造方法および半導体チップ
WO2023209887A1 (ja) エキスパンド装置、半導体チップの製造方法および半導体チップ
WO2023209901A1 (ja) エキスパンド装置、半導体チップの製造方法および半導体チップ
JP7821876B2 (ja) ウエハ加工装置および半導体チップの製造方法
CN118647488A (zh) 用于移送光学装置的设备与方法
JP7804756B2 (ja) ウエハ加工装置、半導体チップの製造方法および半導体チップ
JP7624075B2 (ja) エキスパンド装置、半導体チップの製造方法および半導体チップ
JP7762625B2 (ja) エキスパンド装置、および、半導体チップの製造方法
US12610769B2 (en) Processing method
WO2023209873A1 (ja) ダイシング装置、半導体チップの製造方法および半導体チップ
WO2024161636A1 (ja) レーザ加工装置、レーザ加工方法、半導体チップおよび半導体チップの製造方法
WO2024062801A1 (ja) 成膜装置及び成膜方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22940174

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 22940174

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP