WO2023190450A1 - 接合体の製造方法 - Google Patents

接合体の製造方法 Download PDF

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Publication number
WO2023190450A1
WO2023190450A1 PCT/JP2023/012388 JP2023012388W WO2023190450A1 WO 2023190450 A1 WO2023190450 A1 WO 2023190450A1 JP 2023012388 W JP2023012388 W JP 2023012388W WO 2023190450 A1 WO2023190450 A1 WO 2023190450A1
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Prior art keywords
bonded
copper particles
coating film
less
bonding
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Ceased
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PCT/JP2023/012388
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English (en)
French (fr)
Japanese (ja)
Inventor
隆志 服部
真一 山内
圭 穴井
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Mitsui Kinzoku Co Ltd
Original Assignee
Mitsui Mining and Smelting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Mitsui Mining and Smelting Co Ltd filed Critical Mitsui Mining and Smelting Co Ltd
Priority to KR1020247026888A priority Critical patent/KR20240168931A/ko
Priority to CN202380022219.9A priority patent/CN118715599A/zh
Priority to US18/837,779 priority patent/US20250162087A1/en
Priority to EP23780459.6A priority patent/EP4503103A4/en
Priority to JP2024512523A priority patent/JPWO2023190450A1/ja
Publication of WO2023190450A1 publication Critical patent/WO2023190450A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550°C
    • B23K35/302—Cu as the principal constituent
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/06—Metallic powder characterised by the shape of the particles
    • B22F1/065—Spherical particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/06—Metallic powder characterised by the shape of the particles
    • B22F1/068—Flake-like particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/07—Metallic powder characterised by particles having a nanoscale microstructure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/09—Mixtures of metallic powders
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/14—Treatment of metallic powder
    • B22F1/142—Thermal or thermo-mechanical treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering or brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B23K35/025—Pastes, creams or slurries
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B22F1/056—Submicron particles having a size above 100 nm up to 300 nm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
    • B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
    • B22F2007/042—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method
    • B22F2007/047—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method non-pressurised baking of the paste or slurry containing metal powder
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C2200/00—Crystalline structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics

Definitions

  • the present invention relates to a method for manufacturing a joined body.
  • Patent Document 1 describes (a) copper crystals at 30° C. as one of the bonding materials for bonding objects to be bonded at low temperatures, with respect to the relationship between each temperature and crystallite size during heating in an inert atmosphere.
  • the temperature at which the crystallite size ratio to the child size is 1.2 is 250°C or less
  • the amount of change in the crystallite size ratio per unit temperature in a temperature range of 250°C or more and 350°C or less is 2.0.
  • Copper particles having a particle diameter of ⁇ 10 ⁇ 3 or more are disclosed.
  • the copper particles described in Patent Document 1 can be said to have excellent sinterability, they tend to have large volumetric shrinkage, and when a paste containing the copper particles is fired to form a bonded body, shrinkage cracks occur inside the bonding layer. The problem is that it is easy. Similarly, when the bonding layer is viewed from above, cracks due to shrinkage become noticeable even at the end portions of the bonding layer where the semiconductor element is not placed (hereinafter also referred to as "fillet portions"). There was a problem in that the bonding strength between the bonding layer and the substrate (object to be bonded) was not sufficiently exhibited, and the end portion of the bonding layer peeled off from the substrate.
  • an object of the present invention is to provide a method for manufacturing a bonded body in which the bonding layer at the fillet portion is difficult to peel off from the bonded objects.
  • the present inventors used copper particles having a specific particle size and crystallite size as sinterable metal particles, and sintered the copper particles under specific sintering temperature conditions. It has been found that sintering makes it difficult for the bonding layer at the fillet portion to separate from the objects to be bonded.
  • the coating film is heated to sinter the copper particles.
  • a method for manufacturing a bonded body forming a bonding layer comprising: The copper particles have an average primary particle diameter of 0.06 ⁇ m or more and 1 ⁇ m or less, and the increase ratio of the crystallite diameter D2 (nm) at 250°C to the crystallite diameter D1 (nm) at 150°C (D2-D1)/ Including those in which D1 ⁇ 100 is 5% or more,
  • the present invention provides a method for producing a bonded body, in which the coating film is held at a heating temperature of 150° C. or more and 350° C. or less for 45 minutes or less to sinter the copper particles.
  • FIG. 1 is a schematic diagram showing the steps of the method for manufacturing a joined body of the present invention.
  • FIG. 2 is a cross-sectional view of a joined body obtained by the manufacturing method of the present invention.
  • FIG. 1 is a process diagram illustrating a method for joining a joined body according to the present invention
  • FIG. 2 is a sectional view of a joined body obtained by the manufacturing method shown in FIG.
  • a paste containing copper particles is applied onto the first object 11 to form a coating film 12X.
  • the method for applying the paste is not particularly limited, and for example, screen printing, dispense printing, gravure printing, offset printing, etc. can be used.
  • the paste used in the present invention appropriately contains copper particles, an organic solvent, a regulator, etc., which will be described later.
  • the average primary particle diameter of the copper particles is preferably 0.06 ⁇ m or more, more preferably 0.08 ⁇ m or more, and particularly preferably 0.1 ⁇ m or more.
  • the average primary particle diameter is preferably 1 ⁇ m or less, more preferably 0.8 ⁇ m or less, particularly preferably 0.5 ⁇ m or less, and particularly preferably 0.3 ⁇ m or less.
  • the average primary particle diameter of the copper particles is 1 ⁇ m or less, it becomes easier to set the ratio of increase in crystallite diameter (D2 ⁇ D1)/D1 ⁇ 100, which will be described later, to a suitable range.
  • the copper particles have an increase ratio (D2-D1)/D1 ⁇ 100 of crystallite diameter D2 (nm) at 250°C to crystallite diameter D1 (nm) at 150°C of 5% or more, preferably 6% or more. , more preferably 7.5% or more, more preferably 8% or more.
  • the increase ratio (D2-D1)/D1 ⁇ 100 is an index of the sinterability of the copper particles. Coupled with the fact that the copper particles have the above-mentioned average primary particle diameter in addition to the increase rate, the bonded body obtained by the present manufacturing method has a bond between the objects to be bonded (first object to be bonded and second object to be bonded).
  • the bonding strength is excellent, and the bonding layer at the fillet portion does not peel off from the first object to be bonded.
  • increase rate we mean a value calculated from "(D2-D1)/D1 ⁇ 100".
  • the upper limit value of the increase rate it can be set to about 100%.
  • Copper particles with an increase rate of 5% or more are not obtained by a special manufacturing method, but are determined by the type of copper source, organic surface treatment agent, reducing agent, organic solvent, etc. used in the manufacturing of the copper particles, and the reaction during manufacturing. It can be adjusted by time and reaction temperature. Alternatively, copper particles having the increase rate of 5% or more can be appropriately selected from commonly used copper particles and used.
  • the increase rate is 5% or more and the average primary particle diameter is within the above range, the sinterability of the copper particles becomes good. Moreover, since excessive volumetric shrinkage of the copper particles can be prevented, the first and second objects can be sufficiently bonded without shrinkage cracking during the process of forming a bonding layer by firing the coating film 12X. Proceed to. Moreover, the bonding strength between the bonding layer and the first object to be bonded at the fillet portion becomes excellent.
  • the proportion of copper particles satisfying the increase rate of 5% or more is preferably 10% by mass or more, more preferably 15% by mass or more of the total copper particles.
  • the average primary particle diameter in the present invention is determined by randomly selecting at least 50 copper particles with clear outlines from a scanning electron microscope image in the range of 10,000 times or more and 150,000 times or less. Then, from the obtained particle size, the volume is calculated assuming that the particle is a true sphere, and the volume cumulative particle size at 50% by volume of the cumulative volume is calculated.
  • the crystallite diameter of the copper particles in the present invention is calculated by analyzing an X-ray diffraction pattern obtained by XRD measurement based on a high-temperature XRD (powder X-ray diffraction) method, and then using the Scherrer formula.
  • the high-temperature XRD method is a method in which the sample is placed in a high-temperature unit that can heat the sample, and XRD measurement is performed while gradually heating the sample.
  • the XRD measurement is performed using a fully automatic horizontal multipurpose X-ray diffraction device manufactured by Rigaku Corporation and a high-speed two-dimensional X-ray detector PILATUS100K/R manufactured by the same company as a detector.
  • the conditions for measuring the X-ray diffraction pattern are as follows.
  • Exposure time 60 seconds
  • Collimator ⁇ 0.2mm
  • Measurement atmosphere Nitrogen Measurement temperature: 150, 250°C Temperature increase rate: 10°C/min During XRD measurement (exposure time 60 seconds) at each measurement temperature, the measurement temperature is maintained without increasing the temperature.
  • the crystallite diameter is calculated from the half-width of the X-ray diffraction pattern of the crystal plane (111) of the copper particles obtained by the above-mentioned XRD measurement using the Scherrer formula below.
  • Scherrer equation: D K ⁇ / ⁇ cos ⁇ D: Crystallite diameter K: Scherrer constant (0.94) ⁇ : X-ray wavelength ⁇ : Half width [rad] ⁇ : Bragg angle [rad]
  • the shape may be spherical, polyhedral, flat, amorphous, or a combination thereof. Among these, spherical shape, flat shape, or a combination thereof are preferable.
  • the properties of the copper particles they may be in the form of powder, or may be in the form of a paste or slurry in which the copper particles are dispersed in an organic solvent.
  • a surface treatment agent may be attached to the surface of the copper particles. By attaching a surface treatment agent to the surface of the copper particles, excessive aggregation of the copper particles can be suppressed.
  • the surface treatment agent is not particularly limited, and includes complexes that have adsorption properties to fatty acids, aliphatic amines, and copper.
  • the viscosity of the paste can be measured using a rheometer MARS III manufactured by Thermo Scientific.
  • the viscosity value at a shear rate of 10 s -1 is preferably 10 Pa-s or more and 200 Pa-s or less, and more preferably 15 Pa-s or more and 200 Pa-s or less. It is preferably 30 Pa ⁇ s or more and 90 Pa ⁇ s or less.
  • the conditions for measuring the viscosity of the paste are as follows. Measurement mode: Shear rate dependent measurement Sensor: Parallel type ( ⁇ 20mm) Measurement temperature: 25°C Gap: 0.300mm Shear rate: 0.05 ⁇ 120.01s -1 Measurement time: 2 minutes
  • the thickness of the coating film 12X is preferably 1 ⁇ m or more, and 5 ⁇ m or more, from the viewpoint of ensuring a sufficient thickness of the bonding layer described below and ensuring sufficient bonding strength between the bonding layer and the object to be bonded. is more preferable, and particularly preferably 10 ⁇ m or more.
  • the thickness is preferably 500 ⁇ m or less, more preferably 300 ⁇ m or less.
  • the content of copper particles in the paste is preferably 60% by mass or more and 99% by mass or less, and 65% by mass or more, from the viewpoint of improving the applicability of the paste to the objects to be joined and the shape retention of the coating film 12X. It is more preferably 95% by mass, and particularly preferably 70% by mass or more and 93% by mass or less.
  • organic solvents examples include monoalcohols, polyhydric alcohols, polyhydric alcohol alkyl ethers, polyhydric alcohol aryl ethers, esters, nitrogen-containing heterocyclic compounds, amides, amines, and saturated hydrocarbons. These organic solvents can be used alone or in combination of two or more.
  • the paste may contain an appropriate adjusting agent for adjusting various properties.
  • modifiers include reducing agents, viscosity modifiers, and surface tension modifiers.
  • the reducing agent is preferably one that promotes sintering of the copper particles, such as monoalcohol, polyhydric alcohol, amino alcohol, citric acid, oxalic acid, formic acid, ascorbic acid, aldehyde, hydrazine and its derivatives, hydroxylamine and its derivatives.
  • examples include derivatives, dithiothreitol, phosphite, hydrophosphite, and phosphorous acid and its derivatives.
  • the viscosity modifier may be one that can adjust the viscosity of the paste, preferably within the above viscosity range, such as ketones, esters, alcohols, glycols, hydrocarbons, and polymers. It will be done.
  • the surface tension adjusting agent may be anything that can adjust the surface tension of the coating film 12X, such as acrylic surfactants, silicone surfactants, alkyl polyoxyethylene ethers, polymers such as fatty acid glycerol esters, and Examples include alcohol-based, hydrocarbon-based, ester-based, and glycol monomers.
  • the coating film 12X is dried at a temperature lower than the sintering temperature of the copper particles constituting the coating film 12X.
  • the drying temperature needs to be a temperature that evaporates the organic solvent, regulator, etc. in the coating film 12X, and does not sinter the copper particles as described above. Therefore, the temperature is preferably 50°C or more and 160°C or less, more preferably 60°C or more and 150°C or less, provided that the temperature is lower than the sintering temperature described below. It is not necessary that the entire amount of the organic solvent be removed; it is sufficient that the organic solvent is removed to the extent that the coating film 12X loses its fluidity. Therefore, the organic solvent may remain in the coating film 12X, and its content may be, for example, 50% by mass or less, particularly 30% by mass or less.
  • the coating film 12X can be dried in an inert atmosphere or in the air. Alternatively, the coating film 12X may be dried under reduced pressure. The drying time may be such that the organic solvent, regulator, etc. in the coating film 12X are evaporated, and the organic solvent is removed to the extent that the coating film 12X loses its fluidity as described above.
  • the second object 13 to be bonded is placed on the dried coating film 12X to form a laminate 15.
  • both the first object 11 and the second object 13 contain metal on their surfaces to be welded.
  • a member having a surface made of metal can be used as at least one of the first object 11 and the second object 13.
  • metal refers to a metal itself that does not form a compound with other elements, or an alloy of two or more metals. Examples of such metals include copper, silver, gold, aluminum, palladium, nickel, and alloys consisting of a combination of two or more thereof.
  • a dried paste containing fine metal particles and an organic solvent can be used as at least one of the first object 11 and the second object 13.
  • a member having a surface made of metal can be used, and as the second object to be joined 13, a dried paste containing fine metal particles and an organic solvent can be used.
  • a dried form of paste it is preferable to apply the paste to a supporting base material made of metal such as copper and dry it to obtain a dried form.
  • first object to be bonded 11 and the second object to be bonded 13 include, for example, a spacer, a heat sink, a semiconductor element made of the above-mentioned metal, and a surface coated with at least one of the above-mentioned metals.
  • examples include a substrate having a.
  • the substrate for example, an insulating substrate having a metal layer such as copper on the surface of a ceramic or aluminum nitride plate can be used.
  • the semiconductor element contains one or more of elements such as Si, Ga, Ge, C, N, and As.
  • the first object to be bonded 11 is preferably a substrate.
  • the second object to be bonded 13 is preferably a spacer, a heat sink, or a semiconductor element.
  • the surface made of metal may be made of one kind of metal, or the surface made of metal may be made of one kind of metal. It may be composed of more than one metal. When composed of two or more metals, the surface may be an alloy. Generally, it is preferable that the metal surface be a flat surface, but it may be a curved surface in some cases.
  • the laminate 15 is held between predetermined jigs (not shown), and the laminate 15, that is, the coating film 12X, is heated at 150° C. or more and 350° C. or less, preferably 170° C. or more, under pressure. Heating is performed at 330°C or lower, more preferably at 190°C or higher and 310°C or lower. At this heating temperature, the temperature is preferably maintained for 45 minutes or less, more preferably 1 minute or more and 40 minutes or less, particularly preferably 2 minutes or more and 35 minutes or less, even more preferably 2 minutes or more and 20 minutes or less, and the copper particles is sintered to form the bonding layer 12. By maintaining the above-mentioned heating temperature for 45 minutes or less, it is possible to prevent the objects to be joined from being damaged by heat and improve productivity.
  • the bonding strength between the bonding layer 12 and the first object to be bonded 11 is increased, so that as shown in FIG.
  • the fillet portion 12A is also prevented from peeling off from the first object 11 to be joined.
  • the laminate 15 is pressurized using a jig, and the first object 11 and the second object 13 are bonded by the bonding layer 12.
  • the first object 11 and the second object 13 may be bonded by the bonding layer 12.
  • the bonding layer 12 at the fillet portion 12A is prevented from peeling off from the first object 11 to be bonded.
  • applying pressure at 0.1 MPa or more and 40 MPa or less allows the first and second objects 11 and 13 to be bonded together through the bonding layer 12. This is preferable from the viewpoint of sufficient bonding.
  • the bonded body obtained by the manufacturing method of the present invention takes advantage of the high bonding properties between the objects to be bonded and the bonding layer in the fillet portion, and is suitable for use in, for example, automotive electronic circuits and electronic circuits in which power devices are mounted. .
  • Example 1 Preparation of paste for bonding Copper particles (CH-0200L1 manufactured by Mitsui Kinzoku Mining Co., Ltd., spherical, average primary particle diameter 0.16 ⁇ m) and terpineol as an organic solvent were stirred with a rotation-revolution mixer. The resulting mixture was kneaded in a three-roll mill (final gap: 10 ⁇ m) to obtain a bonding paste. The proportion of copper particles in the bonding paste was 82%, and the proportion of terpineol was 18%. The viscosity of the bonding paste was 44 Pa ⁇ s. Further, the increase ratio of the crystallite diameter D2 (nm) at 250°C with respect to the crystallite diameter D1 (nm) at 150°C of the copper particles was 8.9%.
  • an Ag-plated alumina chip was prepared (5.1 mm in length x 5.1 mm in width x 0.5 mm in thickness) assuming a model member of a semiconductor power device. Next, this alumina chip was placed on the center of the dried coating film to form a laminate in which the first object to be bonded, the coating film, and the second object to be bonded were laminated in this order.
  • a bonding paste and a bonded body were manufactured.
  • the increase ratio of the crystallite diameter D2 (nm) at 250°C with respect to the crystallite diameter D1 (nm) at 150°C was 8.6%.
  • the viscosity of the bonding paste was 70 Pa ⁇ s.
  • the viscosity of the bonding paste was 35 Pa ⁇ s.
  • the increase ratio of the crystallite diameter D2 (nm) at 250°C to the crystallite diameter D1 (nm) at 150°C was 53.7%.
  • the viscosity of the bonding paste was 61 Pa ⁇ s.
  • the bonded bodies manufactured using the bonding pastes of Examples 1 to 3 have an average primary particle diameter of 0.06 ⁇ m or more and 1.0 ⁇ m or less as the copper particles, and a crystallite diameter D1 (nm) at 150° C.
  • the copper particles are sintered by heating the coating film at 150°C or more and 350°C or less for 45 minutes or less, using a material whose crystallite diameter D2 (nm) increases by 5% or more at 250°C. Therefore, the bonding layer at the fillet portion was difficult to peel off from the first object to be bonded.
  • the present invention it is possible to provide a method for manufacturing a bonded body in which the bonding layer at the fillet portion is difficult to peel off from the bonded objects.

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PCT/JP2023/012388 2022-03-30 2023-03-28 接合体の製造方法 Ceased WO2023190450A1 (ja)

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CN202380022219.9A CN118715599A (zh) 2022-03-30 2023-03-28 接合体的制造方法
US18/837,779 US20250162087A1 (en) 2022-03-30 2023-03-28 Bonded body manufacturing method
EP23780459.6A EP4503103A4 (en) 2022-03-30 2023-03-28 PROCESS FOR MANUFACTURING BODY BONDED
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Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2003141929A (ja) * 2001-10-30 2003-05-16 Mitsui Mining & Smelting Co Ltd 銅ペースト用の銅粉
JP2013087308A (ja) * 2011-10-14 2013-05-13 Nippon Steel & Sumikin Chemical Co Ltd 金属ナノ粒子及びその製造方法
JP2019002054A (ja) 2017-06-16 2019-01-10 三井金属鉱業株式会社 銅粒子
WO2019188511A1 (ja) * 2018-03-29 2019-10-03 ハリマ化成株式会社 銅ペースト、接合方法および接合体の製造方法

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JP6337909B2 (ja) * 2014-02-04 2018-06-06 株式会社村田製作所 電子部品モジュールの製造方法
JP7170968B2 (ja) * 2019-02-22 2022-11-15 株式会社大阪ソーダ 導電性接着剤を用いる接合方法

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Publication number Priority date Publication date Assignee Title
JP2003141929A (ja) * 2001-10-30 2003-05-16 Mitsui Mining & Smelting Co Ltd 銅ペースト用の銅粉
JP2013087308A (ja) * 2011-10-14 2013-05-13 Nippon Steel & Sumikin Chemical Co Ltd 金属ナノ粒子及びその製造方法
JP2019002054A (ja) 2017-06-16 2019-01-10 三井金属鉱業株式会社 銅粒子
WO2019188511A1 (ja) * 2018-03-29 2019-10-03 ハリマ化成株式会社 銅ペースト、接合方法および接合体の製造方法

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KR20240168931A (ko) 2024-12-02
CN118715599A (zh) 2024-09-27

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