WO2023176376A1 - セラミック複合基板、及びセラミック複合基板の製造方法 - Google Patents

セラミック複合基板、及びセラミック複合基板の製造方法 Download PDF

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Publication number
WO2023176376A1
WO2023176376A1 PCT/JP2023/006811 JP2023006811W WO2023176376A1 WO 2023176376 A1 WO2023176376 A1 WO 2023176376A1 JP 2023006811 W JP2023006811 W JP 2023006811W WO 2023176376 A1 WO2023176376 A1 WO 2023176376A1
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WO
WIPO (PCT)
Prior art keywords
metal
bonding layer
circuit
bonded
circuit section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/006811
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English (en)
French (fr)
Japanese (ja)
Inventor
優太 津川
清治 矢野
淳一 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
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Denka Co Ltd
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Publication date
Application filed by Denka Co Ltd filed Critical Denka Co Ltd
Priority to JP2023556514A priority Critical patent/JP7431387B1/ja
Priority to CN202380026490.XA priority patent/CN118891961A/zh
Priority to EP23770335.0A priority patent/EP4482261A4/en
Publication of WO2023176376A1 publication Critical patent/WO2023176376A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0341—Intermediate metal, e.g. before reinforcing of conductors by plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703—Plating
    • H05K2203/072—Electroless plating, e.g. finish plating or initial plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/14—Related to the order of processing steps
    • H05K2203/1476—Same or similar kind of process performed in phases, e.g. coarse patterning followed by fine patterning
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing of the conductive pattern
    • H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands

Definitions

  • the present disclosure relates to a ceramic composite substrate and a method for manufacturing the ceramic composite substrate.
  • Patent Document 1 discloses a ceramic metal circuit including a ceramic substrate, and a first metal plate and a second metal plate bonded to a first surface and a second surface of the ceramic substrate via a bonding layer, respectively.
  • a substrate is disclosed.
  • a metal coating is provided on the surface of the first metal plate opposite to the surface to be bonded to the ceramic substrate, and a metal coating is provided to one surface of the second metal plate opposite to the surface to be bonded to the ceramic substrate.
  • the present disclosure provides a ceramic composite substrate that can improve insulation between circuit parts, and a method for manufacturing the ceramic composite substrate.
  • a ceramic composite board includes a ceramic board, a first circuit section provided on the main surface of the ceramic board, and a space provided between the first circuit section along a predetermined direction. , and a second circuit section provided on the main surface.
  • the first circuit section includes a bonded body provided on the main surface, a metal body bonded to the main surface via the bonded body, and a portion of the bonded body that covers the surface of the metal body and a portion of the bonded body that protrudes from the metal body. and a metal coating formed thereon.
  • the bonded body includes a silver bonding layer that is bonded to the metal body and has a silver content of 50% by mass or more.
  • the metal coating includes a side portion formed to cover a side surface of the silver bonding layer that faces the second circuit portion.
  • the distance L in the predetermined direction between the end of the side portion near the second circuit section and the end of the silver bonding layer near the second circuit section is greater than the thickness H of the metal coating.
  • the distance L may be greater than 2 ⁇ m.
  • the thickness H may be 2 ⁇ m or more.
  • the ceramic plate may contain silicon nitride or aluminum nitride.
  • the metal coating may contain nickel or gold.
  • a method for manufacturing a ceramic composite substrate includes an intermediate body in which a metal body is bonded to the main surface of a ceramic plate via a bonded body, the bonded body being bonded to the metal body,
  • the intermediate body including a silver bonding layer having a silver content of 50% by mass or more, a metal body is formed so as to form a first circuit part and a second circuit part spaced apart from each other along a predetermined direction.
  • a step of etching a part of the metal body and a part of the bonded body, and a step of etching a part of the metal body which covers the surface of the part of the metal body constituting the first circuit part and after the etching process includes the step of forming a metal coating so that a side portion of a portion of the bonding layer that covers the side surface facing the second circuit portion is formed.
  • Distance L in a predetermined direction between the end portion of the side portion included in the metal coating near the second circuit portion and the end portion of a part of the silver bonding layer constituting the first circuit portion near the second circuit portion is larger than the thickness H of the metal coating.
  • a ceramic composite substrate and a method for manufacturing the ceramic composite substrate that can improve the insulation between circuit parts are provided.
  • FIG. 1 is a plan view schematically showing an example of a ceramic composite substrate.
  • FIG. 2 is an end view taken along the line II-II shown in FIG.
  • FIGS. 3A and 3B are examples of SEM images of observed cross sections.
  • 4(a), FIG. 4(b), FIG. 4(c), and FIG. 4(d) are schematic diagrams for explaining an example of the manufacturing process.
  • FIG. 5(a), FIG. 5(b), and FIG. 5(c) are schematic diagrams for explaining an example of the manufacturing process.
  • FIG. 1 schematically shows an example of a ceramic composite substrate according to an embodiment.
  • the ceramic composite substrate 10 shown in FIG. 1 is, for example, a substrate (circuit board) used as a component of a power module or the like.
  • the ceramic composite board 10 includes a ceramic board 20 and a metal circuit board 30.
  • the ceramic plate 20 is formed into a flat plate shape. Ceramic plate 20 has a pair of principal surfaces facing in opposite directions. Hereinafter, one of the pair of main surfaces will be referred to as the "front surface 20A" and the other will be referred to as the "back surface 20B.”
  • the outer edge of the surface 20A may have a rectangular shape. In the present disclosure, the direction in which one set of parallel sides of the outer edge of the surface 20A extends is defined as the "X-axis direction", and the direction in which another set of mutually parallel sides extends is defined as the "Y-axis direction”.
  • the thickness direction of the ceramic plate 20 (the direction perpendicular to the surface 20A) is defined as the "Z-axis direction.”
  • Z-axis direction the direction from the back surface 20B to the front surface 20A is referred to as "up”, and the direction from the front surface 20A to the back surface 20B is referred to as "down”.
  • the material (ceramic) forming the ceramic plate 20 is not particularly limited.
  • the ceramic plate 20 is, for example, a silicon nitride plate or an aluminum nitride plate.
  • the thickness of the ceramic plate 20 may be 0.1 mm to 1 mm, 0.1 mm to 0.6 mm, or 0.2 mm to 0.4 mm.
  • the metal circuit board 30 is a part that constitutes a circuit included in the ceramic composite substrate 10.
  • a chip (electronic component) may be mounted on the metal circuit board 30.
  • the metal circuit board 30 is provided on the surface 20A of the ceramic board 20.
  • the metal circuit board 30 includes, for example, a circuit section 30a, a circuit section 30b, and a circuit section 30c.
  • the circuit section 30a, the circuit section 30b, and the circuit section 30c are arranged on the surface 20A while being separated from each other.
  • the circuit section 30b constitutes a second circuit section.
  • three or more circuit sections are provided, one set of circuit sections with the smallest distance between the circuit sections among the plurality of sets of circuit sections adjacent to each other is selected as the first circuit section and the second circuit section. may be done.
  • the circuit portion 30a, the circuit portion 30b, and the circuit portion 30c are arranged inside the outer edge of the surface 20A.
  • the circuit section 30a and the circuit section 30b are lined up in the X-axis direction (predetermined direction).
  • the circuit section 30b is provided on the surface 20A with a space between it and the circuit section 30a along the X-axis direction.
  • the circuit section 30a and the circuit section 30c are lined up, and the circuit section 30b and the circuit section 30c are lined up.
  • the circuit section 30a, the circuit section 30b, and the circuit section 30c may be configured in the same way.
  • FIG. 2 schematically shows a cross section of the ceramic composite substrate 10 in the XZ plane along the line II-II in FIG.
  • the circuit section 30a includes a metal body 40, a bonded body 50, and a metal coating 60.
  • the metal body 40 has electrical conductivity.
  • the metal body 40 is, for example, a copper plate.
  • the metal body 40 may be made of one of a copper alloy, aluminum, and an aluminum alloy instead of copper.
  • Metal body 40 includes a top surface 42 and a side surface 44 .
  • the upper surface 42 may be parallel (substantially parallel) to the surface 20A.
  • Side surface 44 extends from the outer edge of upper surface 42 toward surface 20A.
  • the side surface 44 may be inclined with respect to the direction (Z-axis direction) perpendicular to the surface 20A.
  • the side surface 44 may be sloped away from the end of the top surface 42 as it approaches the surface 20A. In this case, the cross-sectional area of the metal body 40 along the XY plane increases as it approaches the surface 20A.
  • the thickness of the metal body 40 (the distance in the Z-axis direction between the lower surface and the upper surface 42 of the metal body 40) may be 0.1 mm to 2 mm, or 0.15 mm to 1.5 mm. , 0.2 mm to 1 mm.
  • the length of the metal body 40 in the extending direction may be 5 mm to 100 mm
  • the width of the metal body 40 may be 5 mm to 100 mm. may be 1 mm to 70 mm.
  • the joined body 50 is provided on the surface 20A, and joins the metal body 40 to the ceramic plate 20 (surface 20A). That is, the metal body 40 is joined to the surface 20A via the joined body 50.
  • the joined body 50 is provided between the metal body 40 and the surface 20A, and at least a part of the upper surface of the joined body 50 is in contact with (joined to) the metal body 40, and the joined body 50 is At least a portion of the lower surface is in contact with (joined to) the surface 20A.
  • a region near the outer edge of the joined body 50 protrudes from the outer edge of the metal body 40.
  • a region near the outer edge of the joined body 50 protrudes outward from between the metal body 40 and the surface 20A over its entire circumference, for example.
  • the terms “inside” and “outside” are used with respect to the center of the circuit section.
  • the outer edge of the joined body 50 may surround the outer edge of the metal body 40.
  • a portion of the joined body 50 that protrudes from between the metal body 40 and the surface 20A will be referred to as an "extending portion.”
  • the joined body 50 may be made of an Ag-Cu-Sn brazing filler metal.
  • the Ag-Cu-Sn brazing material contains silver, copper, tin, and active metals.
  • the content of silver in the bonded body 50 may be 50% by mass or more.
  • the content of silver in the bonded body 50 may be 60% by mass or more, 70% by mass or more, or 80% by mass or more.
  • the content of silver in the bonded body 50 may be 98% by mass or less.
  • the content of copper in the bonded body 50 may be 5 parts by mass to 20 parts by mass based on 100 parts by mass of silver.
  • the tin content in the joined body 50 may be 0.5 parts by mass to 15 parts by mass, or even 0.5 parts by mass to 5 parts by mass, based on the total of 100 parts by mass of silver and copper.
  • the amount may be 1 part by weight to 5 parts by weight.
  • the active metal includes at least one selected from the group consisting of titanium, zirconium, hafnium, and niobium.
  • the content of the active metal in the joined body 50 may be 0.5 parts by mass to 10 parts by mass, or 0.5 parts by mass to 5 parts by mass, based on a total of 100 parts by mass of silver and copper. The amount may be 2 parts by mass to 5 parts by mass.
  • the active metal may be included as a hydride and may include, for example, titanium hydride ( TiH2 ).
  • TiH 2 in the joined body 50 may be 0.5 parts by mass to 10 parts by mass, or 1 part by mass to 5 parts by mass, based on a total of 100 parts by mass of silver and copper.
  • the amount may be 2 parts by mass to 5 parts by mass.
  • the bonded body 50 includes a first bonding layer 52 and a second bonding layer 54.
  • the first bonding layer 52 is a layer having a silver content of 50% by mass or more.
  • the silver component of the materials constituting the bonded body reacts with the metal component (e.g., copper) contained in the metal body 40.
  • the metal component e.g., copper
  • a layer mainly composed of silver is formed above.
  • containing silver as a main component means that the silver content is 50% by mass or more.
  • the first bonding layer 52 (silver bonding layer) is bonded to the metal body 40.
  • the second bonding layer 54 is a layer containing less silver than the first bonding layer 52.
  • the second bonding layer 54 is a portion of the bonded body 50 other than the first bonding layer 52.
  • the silver content in the second bonding layer 54 is less than 50% by mass.
  • the second bonding layer 54 is bonded to the surface 20A of the ceramic plate 20.
  • the first bonding layer 52 is bonded to the metal body 40 and the second bonding layer 54 is bonded to the surface 20A, so that the metal body 40 can bond the first bonding layer 52 and the second bonding layer 54. It is bonded to the surface 20A via a bonded body 50 including the bonded body 50.
  • the second bonding layer 54 may contain nitrogen and titanium.
  • the total content of nitrogen and titanium may be greater than the content of each other component (the content of each component).
  • the content of silver in the second bonding layer 54 may be 30% by mass or less.
  • the thickness of the second bonding layer 54 may be 500 nm or less, or may be 100 nm to 500 nm.
  • the first bonding layer 52 overlaps the second bonding layer 54.
  • a portion of the first bonding layer 52 may be formed discontinuously, and a portion of the second bonding layer 54 may be formed discontinuously.
  • the first bonding layer 52 overlapping the second bonding layer 54 means that the first bonding layer 52 overlaps with the first bonding layer 52 in most (for example, 70% or more) of the bonded body 50 when viewed from the Z-axis direction. covers the second bonding layer 54.
  • the first bonding layer 52 may cover all of the second bonding layer 54, or the first bonding layer 52 may not cover a part of the second bonding layer 54.
  • the proportion of the second bonding layer 54 covering the first bonding layer 52 may be greater than 50%, It may be 60% or more.
  • the contents of various components constituting the first bonding layer 52 and the second bonding layer 54 are measured at the bonding interface between the metal body and the ceramic plate using a scanning electron microscope and an EDS (Energy Dispersive X-ray Spectroscopy) detector. It is calculated by measuring the concentration in the vicinity.
  • EDS Electronicgy Dispersive X-ray Spectroscopy
  • a HAADF image of a cross section of the ceramic composite substrate 10 along the XZ plane (a cross section near the bonding interface) is obtained, and semi-quantitative analysis using an EDS detector is performed to determine the first bonding layer 52 and the The contents of various components in the two bonding layers 54 are measured.
  • the total amount of other components other than the carbon component is taken as 100% by mass, and the content of silver etc. %) is calculated.
  • the contents of various components are the arithmetic mean of values measured in five observation cross sections arbitrarily selected such that the positions in the Y-axis direction are different from each other. Further, in one observation cross section, the content is measured on one line set along the Z-axis direction at an arbitrary position in the X-axis direction.
  • the joined body 50 of the circuit portion 30a includes an extension portion (hereinafter referred to as “extension portion 58”) that protrudes from between the metal body 40 and the surface 20A toward the circuit portion 30b.
  • extension portion 58 both the first bonding layer 52 and the second bonding layer 54 may protrude toward the circuit portion 30b.
  • only the second bonding layer 54 may protrude without the first bonding layer 52 protruding.
  • the bonded body 50 may be formed such that the amount of protrusion of the second bonding layer 54 is larger than the amount of protrusion of the first bonding layer 52.
  • the amount of protrusion is defined as the distance in the X-axis direction between the end of the metal body 40 closest to the circuit section 30b and the end of each bonding layer closest to the circuit section 30b. In the cross section where the first bonding layer 52 does not protrude, the amount of protrusion of the first bonding layer 52 is zero.
  • the proportion of the cross sections in which the first bonding layer 52 protrudes may be 60% or more.
  • the observation cross section is set at a position that includes both the circuit section 30a and the circuit section 30b in the direction perpendicular to the cross section (Y-axis direction in FIG. 2).
  • the distance between the circuit section 30a and the circuit section 30b in the observed cross section is set in consideration of the insulation (electrical insulation) between the metal bodies included in the circuit section.
  • the distance between the circuit portion 30a and the circuit portion 30b (the shortest distance in the X-axis direction) is, for example, 0.3 mm to 1.5 mm.
  • the length of the extending portion 58 in the X-axis direction (the amount of protrusion of the second bonding layer 54) may be 10 ⁇ m to 100 ⁇ m
  • the thickness of the extending portion 58 (the amount of protrusion of the second bonding layer 54) may be 10 ⁇ m to 100 ⁇ m.
  • the thickness of the second bonding layer 54 may be 1 ⁇ m to 10 ⁇ m.
  • the distance in the X-axis direction between the first bonding layer 52 and the circuit section 30b is "D1"
  • the distance in the X-axis direction between the second bonding layer 54 and the circuit section 30b is "D2”.
  • the distance D2 may be smaller than the distance D1.
  • the distance D1 is the shortest distance in the X-axis direction between the end of the first bonding layer 52 closest to the circuit section 30b and the end of the circuit section 30b closest to the circuit section 30a in the observed cross section.
  • the distance D2 is the shortest distance in the X-axis direction between the end of the second bonding layer 54 closest to the circuit section 30b and the end of the circuit section 30b closest to the circuit section 30a in the observed cross section.
  • the difference (D1-D2) between distance D1 and distance D2 may be greater than 2 ⁇ m.
  • the difference between the distance D1 and the distance D2 may be 3 ⁇ m or more, 4 ⁇ m or more, or 5 ⁇ m or more.
  • the difference between the distance D1 and the distance D2 may be 25 ⁇ m or less.
  • the respective values of distance D1 and distance D2 are calculated average values of distances measured at five observation cross sections (five fields of view) arbitrarily selected such that the positions in the Y-axis direction are different from each other. Each of the five locations is selected, for example, in each area when the circuit portion 30a is equally divided into five in the Y-axis direction.
  • the distance D1 and the distance D2 may be measured at the same five observed cross sections.
  • the length of the above-mentioned extension part 58 in the X-axis direction and the thickness of the extension part 58 are also the arithmetic mean value of the measured values measured at five observed cross sections.
  • the metal coating 60 is a coating that covers the metal body 40.
  • the metal coating 60 is used, for example, for the purpose of adjusting the coefficient of thermal expansion of the metal circuit board 30 (ceramic composite substrate 10) and improving the heat resistance cycle, or for the purpose of suppressing the occurrence of rust (oxidation) of the metal body 40. It is formed.
  • the metal coating 60 may be formed by a plating method or a sputtering method.
  • the metal coating 60 is, for example, metal plating formed by electroless plating.
  • the metal coating 60 covers the top surface 42 and side surfaces 44 of the metal body 40 when viewing the surface 20A from the Z-axis direction.
  • the metal coating 60 covers the upper surface 42 and side surface 44 of the metal body 40 as well as the extending portion of the joined body 50. In a state where the metal coating 60 covers the extension part 58 of the joined body 50, the metal coating 60 covers at least the upper surface of the extension part 58 when looking at the surface 20A from the Z-axis direction.
  • the metal coating 60 may be made of metal other than silver.
  • the metal forming the metal coating 60 may be different from the metal forming the metal body 40.
  • the material constituting the metal coating 60 is, for example, nickel, gold, a nickel alloy, or a gold alloy.
  • the nickel alloy (alloy containing nickel as a main component) is, for example, a nickel-phosphorus alloy or a nickel-boron alloy.
  • the distance D2 is smaller than the distance D1
  • the second bonding layer 54 protrudes further outward in the extension portion 58 than the first bonding layer 52. Therefore, the metal coating 60 is formed on the second bonding layer 54 in the portion where the upper surface of the second bonding layer 54 is exposed.
  • the metal coating 60 includes a portion (hereinafter referred to as "side portion 62") formed so as to cover the side surface (side) of the first bonding layer 52 that faces the circuit portion 30b. It will be done.
  • the side surface (side) of the first bonding layer 52 that faces the circuit section 30b is the same as when the circuit section 30a is viewed from the circuit section 30b along the X-axis direction, assuming that there is no metal coating 60. This is the exposed part.
  • the side portion 62 of the metal coating 60 overlaps the portion of the second bonding layer 54 that protrudes beyond the first bonding layer 52.
  • the side portion 62 may be in contact with the side surface of the first bonding layer 52, and a portion of the metal body 40 may be placed between the side portion 62 and the side surface of the first bonding layer 52. There may be a section.
  • the distance in the X-axis direction (shortest distance) between the end of the side portion 62 near the circuit section 30b and the end of the first bonding layer 52 near the circuit section 30b is "L"
  • the distance L is larger than the thickness H.
  • the distance L may be at least 1.2 times the thickness H, at least 1.4 times the thickness H, or at least 1.6 times the thickness H.
  • the distance L may be less than or equal to five times the thickness H.
  • the value of the distance L and the value of the thickness H are each measured in the same manner as the distances D1 and D2 described above. That is, the respective values of distance L and thickness H are calculated average values of measured values measured at five observation cross sections (five fields of view) arbitrarily selected such that the positions in the Y-axis direction are different from each other.
  • the distance L and the thickness H may be measured at the same five observed cross sections.
  • the measured value of the thickness H in one observed cross section is measured at a position near the center of the metal body 40 in the thickness direction (at and near the center) in a region covering the side surface 44 of the metal body 40.
  • the distance L (average value) may be greater than 2 ⁇ m.
  • the distance L may be 3 ⁇ m or more, 5 ⁇ m or more, or 7 ⁇ m or more.
  • the distance L may be 20 ⁇ m or less.
  • the thickness H (average value) may be 2 ⁇ m or more.
  • the thickness H may be 3 ⁇ m or more, 4 ⁇ m or more, or 5 ⁇ m or more.
  • the thickness H may be 10 ⁇ m or less.
  • the circuit portion 30b includes a metal body 40, a bonded body 50, and a metal coating 60.
  • the metal body 40, the bonded body 50, and the metal coating 60 of the circuit portion 30b may be formed in the same manner as the metal body 40, the bonded body 50, and the metal coating 60 of the circuit portion 30a.
  • the distance in the X-axis direction between the second bonding layer 54 in the bonded body 50 of the circuit portion 30b and the circuit portion 30a is the distance between the first bonding layer 52 in the bonded body 50 of the circuit portion 30b and the circuit portion 30a It may be smaller than the distance in the axial direction.
  • a metal circuit board configured similarly to the metal circuit board 30 may also be formed on the back surface 20B.
  • FIGS. 3(a) and 3(b) shows an SEM image (magnification: 1000 times) obtained in an arbitrarily selected observation cross section.
  • the side surface (side) of the extension portion 58 is covered with the side portion 62 of the metal coating 60 in contact with it.
  • the distance L corresponds to the length of the side portion 62 in the X-axis direction (horizontal direction on the image).
  • the first bonding layer 52 is formed discontinuously.
  • the first bonding layer 52 does not protrude from between the metal body 40 and the ceramic plate 20, and the second bonding layer 54 does not protrude between the metal body 40 and the ceramic plate 20. It is protruding from between.
  • a portion of the metal body 40 exists between the side portion 62 and the first bonding layer 52 in the X-axis direction. In this case, the distance L is larger than the length of the side portion 62 in the X-axis direction.
  • a method for manufacturing a ceramic composite board includes a step of manufacturing a ceramic board and a step of forming a metal circuit board.
  • a step of producing the ceramic plate 20 first, a step of forming a slurry containing ceramic powder, a sintering aid, a binder resin, and a solvent to obtain a green sheet is performed.
  • the slurry may contain a plasticizer, a dispersant, and the like.
  • the ceramic powder is, for example, silicon nitride powder or aluminum nitride powder.
  • Sintering aids include oxides, halides (fluorides, chlorides, etc.), nitrates, and sulfates of rare earth elements, and oxides, halides (fluorides, chlorides, etc.) of alkaline earth metals. ), nitrates, and sulfates. These may be used alone or in combination of two or more.
  • binder resins include methyl cellulose, ethyl cellulose, polyvinyl alcohol, polyvinyl butyral, and (meth)acrylic resins.
  • plasticizers include purified glycerin, glycerin triolate, diethylene glycol, phthalic acid plasticizers such as di-n-butyl phthalate, and dibasic acid plasticizers such as di-2-ethylhexyl sebacate. It will be done.
  • dispersants include poly(meth)acrylates and (meth)acrylic acid-maleate copolymers.
  • the solvent include organic solvents such as ethanol and toluene.
  • methods for forming the slurry include a doctor blade method and an extrusion method.
  • the green sheet obtained by molding is degreased and fired.
  • Degreasing may be performed, for example, by heating at 400°C to 800°C for 0.5 to 20 hours. Thereby, the amount of residual organic matter (carbon) can be reduced while suppressing oxidation and deterioration of inorganic compounds.
  • Firing is performed by heating at 1700° C. to 1900° C. in a non-oxidizing gas atmosphere such as nitrogen, argon, ammonia, or hydrogen. In this way, the ceramic plate 20 can be obtained.
  • the above-mentioned degreasing and firing may be performed with a plurality of green sheets laminated.
  • a release layer made of a release agent may be provided between the green sheets in order to facilitate separation of the base materials after firing.
  • the mold release agent for example, boron nitride (BN) can be used.
  • the number of green sheets to be stacked may be, for example, 5 to 100, or 10 to 70.
  • a process of forming a metal circuit board is performed.
  • a process of obtaining the intermediate body 18 using the ceramic plate 20 and a pair of metal plates is performed.
  • a bonding material for example, a brazing material
  • a pair of metal bodies 40M is bonded to the front surface 20A and the back surface 20B.
  • the pair of metal bodies 40M may have a flat plate shape similar to the ceramic plate 20.
  • the metal body 40M is a base material of the metal body 40 described above.
  • the bonding material is applied to each of the front surface 20A and back surface 20B of the ceramic plate 20 by a method such as a roll coater method, a screen printing method, or a transfer method.
  • the bonding material is a brazing material
  • the brazing material contains, for example, silver powder, copper powder, tin powder, powder of an active metal or its compound (hydride), an organic solvent, a binder, and the like.
  • the content of tin powder may be 0.5 parts by mass to 5.0 parts by mass with respect to 100 parts by mass of silver powder and copper powder in total.
  • the content of the metal hydride powder may be 1 part by mass to 8 parts by mass based on a total of 100 parts by mass of the silver powder and copper powder.
  • the viscosity of the brazing filler metal may be, for example, 5 Pa ⁇ s to 20 Pa ⁇ s.
  • the content of the organic solvent in the brazing filler metal may be, for example, 5% to 25% by mass, and the content of the binder may be, for example, 2% to 15% by mass.
  • a laminate is obtained by overlapping a pair of metal bodies 40M on the front surface 20A and back surface 20B of the ceramic plate 20 coated with a bonding material. Then, a firing step is performed in which this laminate is fired in a heating furnace.
  • the temperature in the furnace during firing (firing temperature) is, for example, 750° C. or higher.
  • the firing temperature may be 750°C to 950°C, or 780°C to 900°C.
  • the time for holding at the above firing temperature (baking time) may be from 10 minutes to 180 minutes, or from 15 minutes to 90 minutes.
  • the atmosphere in the heating furnace during firing may be under an inert gas such as nitrogen, may be under reduced pressure below atmospheric pressure (1.0 ⁇ 10 -3 Pa or less), or may be under vacuum. good.
  • FIG. 4(a) schematically shows a cross section of the intermediate body 18.
  • the bonding material bonded body 50M
  • the first bonding layer 52M (silver bonding layer) is the base material of the first bonding layer 52 described above
  • the second bonding layer 54M is the base material of the second bonding layer 54 described above.
  • the metal circuit board (metal plate and bonded body) formed on the back surface 20B of the ceramic plate 20 is omitted.
  • a step of masking the regions where each circuit section such as the circuit section 30a is to be formed is performed. For example, as shown in FIG. 4B, an etching resist 70 is printed in a region where each circuit section such as the circuit section 30a is to be formed. A portion of the metal body 40M located in a region where the etching resist 70 is not formed is exposed.
  • a step of etching the region of the metal body 40M that is not covered with the etching resist 70 is performed.
  • the metal body 40M is etched using a mixed solution containing cupric chloride, hydrochloric acid, and hydrogen peroxide as the etching solution.
  • the region of the metal body 40M that is not covered with the etching resist 70 is removed, and a part of the first bonding layer 52M of the bonded body 50M is exposed.
  • an inclined surface that is not covered with the etching resist 70 may be formed.
  • a step of etching (chemical treatment) the first bonding layer 52M of the bonded body 50M is performed.
  • the first bonding layer 52M is etched using a chemical solution containing sodium thiosulfate as the etching solution.
  • a chemical solution containing sodium thiosulfate as the etching solution.
  • FIG. 4D at least a portion of the exposed portion of the first bonding layer 52M is removed, and a portion of the second bonding layer 54M of the bonded body 50M is exposed.
  • the end portion of the first bonding layer 52M and its vicinity may protrude from between the metal body 40M and the ceramic plate 20.
  • a step of etching (chemical treatment) the second bonding layer 54M of the bonded body 50M is performed.
  • the second bonding layer 54M is etched using a mixed solution containing hydrogen peroxide and ammonium fluoride as the etching solution.
  • the etching solution a mixed solution containing hydrogen peroxide and ammonium fluoride as the etching solution.
  • FIG. 5A at least a portion of the exposed portion of the second bonding layer 54M is removed, and a portion of the surface 20A of the ceramic plate 20 is exposed.
  • the end of the second bonding layer 54M and its vicinity may protrude from between the metal body 40M and the ceramic plate 20.
  • the amount of protrusion of the first bonding layer 52M and the amount of protrusion of the second bonding layer 54M may be approximately the same.
  • the step of etching the metal body 40M is performed again.
  • the same mixed solution as in the first etching may be used, and the etching time of the second etching of the metal body 40M may be shorter than that of the first etching.
  • the portions located on the sides of the metal body 40M are further removed, and the metal body 40 constituting the circuit portion such as the circuit portion 30a is formed.
  • the amount of protrusion of the first bonding layer 52M and the second bonding layer 54M (second bonding layer 54) increases.
  • the step of etching the first bonding layer 52M is performed again.
  • the same chemical solution as in the first etching may be used.
  • the first bonding layer 52 that constitutes a circuit section such as the circuit section 30a is formed.
  • the first bonding layer 52 is arranged such that at least a portion of the end portion of the first bonding layer 52 is maintained in a state protruding from between the metal body 40 and the ceramic plate 20.
  • a second etch for 52M may be performed. Since the second bonding layer 54M is not etched a second time, the second bonding layer 54 constituting the circuit section such as the circuit section 30a is formed by the above etching for the second bonding layer 54M.
  • the portion constituted by the metal body 40 and the bonded body 50 after etching and before the metal coating 60 is formed is also referred to as a "circuit portion.”
  • the part constituted by the metal body 40 and the joined body 50 corresponding to the circuit part 30a is referred to as the "circuit part 32a”
  • the part constituted by the metal body 40 and the joined body 50 corresponding to the circuit part 30b is referred to as the "circuit part 32b”. shall be.
  • a part of the metal body 40M and a part of the bonded body 50M are etched so that the circuit part 32a and the circuit part 32b are formed with a gap between them along the X-axis direction. be exposed.
  • the distance D4 in the X-axis direction between a part of the second bonding layer 54M (second bonding layer 54) that configures the circuit portion 32a and the circuit portion 32b determines the distance D4 that constitutes the circuit portion 32a.
  • a portion of the metal body 40M and a portion of the bonded body 50M are arranged such that the distance D3 in the X-axis direction between a portion of the first bonding layer 52M (the first bonding layer 52) and the circuit portion 32b is smaller than the distance D3 in the X-axis direction. may be removed.
  • the distance D3 is the distance between the end of the first bonding layer 52 of the circuit section 32a (first circuit section) that is closest to the circuit section 32b (second circuit section) and the end of the circuit section 32b that is closest to the circuit section 32a. It is defined as the distance in the X-axis direction between.
  • the distance D4 is defined as the distance in the X-axis direction between the end of the second bonding layer 54 of the circuit section 32a that is closest to the circuit section 32b and the end of the circuit section 32b that is closest to the circuit section 32a.
  • the etching process for the metal body 40M and the bonded body 50M may be performed in any manner. After the etching process is performed on the metal body 40M and the bonded body 50M, the etching resist 70 is removed. The etching resist 70 may be removed by any known method.
  • a step of forming a metal coating 60 to cover the surface of the metal body 40 is performed.
  • a plating film of metal such as nickel is formed by electroless plating to cover the top surface 42 and side surfaces 44 of the metal body 40.
  • the metal coating 60 is formed so as to also cover the extending portion of the joined body 50 that protrudes outward from between the metal body 40 and the ceramic plate 20.
  • electroless plating since the second bonding layer 54 protrudes further outward than the first bonding layer 52 in the extended portion, a metal component is deposited on the second bonding layer 54. .
  • the side portions 62 that cover the sides of the first bonding layer 52 are formed. No metal component is deposited on the exposed surface 20A during electroless plating.
  • the ceramic composite substrate 10 includes a ceramic board 20, a circuit section 30a provided on the surface 20A of the ceramic board 20, and a space provided between the circuit section 30a along the X-axis direction.
  • the circuit portion 30b is provided on the surface 20A.
  • the circuit portion 30a includes a bonded body 50 provided on the surface 20A, a metal body 40 bonded to the surface 20A via the bonded body 50, and a metal body 40 from the surface 20A of the metal body 40 and the metal body 40 of the bonded body 50. It has a metal coating 60 formed to cover the protruding portion.
  • the bonded body 50 includes a first bonding layer 52 that is bonded to the metal body 40 and has a silver content of 50% by mass or more.
  • the metal coating 60 includes a side portion 62 formed to cover the side surface of the first bonding layer 52 that faces the circuit portion 30b.
  • the distance L in the X-axis direction between the end of the side portion 62 near the circuit section 30b and the end of the first bonding layer 52 near the circuit section 30b is larger than the thickness H of the metal coating.
  • the distance L may be greater than 2 ⁇ m.
  • the thickness H may be 2 ⁇ m or more.
  • the length in the X-axis direction of the side portion 62 formed between the first bonding layer 52 of the circuit portion 30a and the circuit portion 30b is greater than 2 ⁇ m. Therefore, a metal film in an amount that can further suppress precipitation of the silver component from the first bonding layer 52 is formed on the sides of the first bonding layer 52 of the circuit portion 30a. Therefore, it becomes possible to further improve the insulation between the circuit section 30a and the circuit section 30b.
  • the ceramic plate 20 may contain silicon nitride or aluminum nitride.
  • Metal coating 60 may contain nickel or gold. The presence of the metal coating 60 containing nickel or gold on the sides of the first bonding layer 52 can suppress precipitation of the silver component. Therefore, the above configuration is useful for maintaining insulation between the circuit section 30a and the circuit section 30b.
  • a method for manufacturing a ceramic composite substrate 10 includes an intermediate body 18 in which a metal body 40M is bonded to a surface 20A of a ceramic plate 20 via a bonded body 50M, and the bonded body 50M includes: In the intermediate body 18, which includes the first bonding layer 52M that is bonded to the metal body 40M and has a silver content of 50% by mass or more, the circuit portion 32a and the circuit portion are spaced apart from each other along the X-axis direction.
  • a part of the metal body 40M and a part of the bonded body 50M are etched, and after the etching process, a part of the metal body 40M (the metal body 40 ), and a side portion 62 is formed that covers the side surface of a portion of the first bonding layer 52M (first bonding layer 52) that constitutes the circuit portion 32a that faces the circuit portion 32b. and forming a metal coating 60.
  • the distance L between them in the X-axis direction is larger than the thickness H of the metal coating 60.
  • the distance L is larger than the thickness H of the metal coating 60, there is sufficient space between the first bonding layer 52 of the circuit portion 32a and the circuit portion 32b to suppress precipitation of silver components. A large amount of metal coating is formed. Therefore, it is possible to improve the insulation between the circuit section 32a and the circuit section 32b.
  • An Ag-Cu-Ti-Sn brazing filler metal was prepared.
  • the blending ratio in the prepared brazing material was 85% by mass of Ag, 9% by mass of Cu, 3% by mass of Ti, and 3% by mass of Sn.
  • the brazing filler metal was applied to both main surfaces of a commercially available silicon nitride substrate (thickness: 0.32 mm) by screen printing. Copper plates (thickness: 0.3 mm) were stacked on both main surfaces of the silicon nitride plates to obtain a laminate. Using an electric furnace, the laminate was heated in a vacuum atmosphere at an internal furnace temperature of 800° C. for 40 minutes to melt the brazing filler metal powder and join the ceramic plate and the copper plate (firing step).
  • etching resist was printed on predetermined regions of both main surfaces of the copper plate in the produced intermediate, and a resist pattern having a predetermined shape was formed on the main surface of the copper plate using an exposure device. Then, the copper plate was etched using a mixed solution containing cupric chloride, hydrochloric acid, and hydrogen peroxide. Thereafter, the first bonding layer of the bonded body containing silver as a main component was etched using a chemical solution containing sodium thiosulfate. Furthermore, the second bonding layer was etched using a mixed solution containing hydrogen peroxide and ammonium fluoride.
  • a nickel (Ni) plating film is formed by electroless plating so that the distance L is larger than the thickness H and covers the surface of the metal body and the parts of the joined body that protrude from the metal body. did. At least a portion of the above steps were repeated to prepare five individual ceramic composite substrates 10 according to the example.
  • Ceramic composite substrate was produced in the same manner as in the above example except that a nickel plating film was not formed. Five individual pieces were prepared as ceramic composite substrates according to comparative examples. Note that as composite substrates according to Examples and Comparative Examples, ceramic composite substrates with comb-shaped electrodes on which a first electrode including a first circuit portion and a second electrode including a second circuit portion were formed were prepared.
  • the insulation between the first circuit section and the second circuit section adjacent to the first circuit section was evaluated.
  • the distance between the first circuit section and the second circuit section was 0.5 mm.
  • a voltage of 1 kV DC direct current
  • the time during which the insulation resistance value between the first electrode and the second electrode became 1 ⁇ 10 6 ⁇ or less was measured.
  • the upper limit of the measurement time was 500 hours.
  • Table 1 shows the results of evaluating five individuals. Note that the thickness H was 4 ⁇ m, the distance L was 8 ⁇ m, and the difference between distance D1 and distance D2 was 8 ⁇ m. Further, the silver content in the first bonding layer 52 was 90% by mass.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Structure Of Printed Boards (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
PCT/JP2023/006811 2022-03-16 2023-02-24 セラミック複合基板、及びセラミック複合基板の製造方法 Ceased WO2023176376A1 (ja)

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CN202380026490.XA CN118891961A (zh) 2022-03-16 2023-02-24 陶瓷复合基板及陶瓷复合基板的制造方法
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JP2016074565A (ja) * 2014-10-07 2016-05-12 Ｄｏｗａメタルテック株式会社 金属−セラミックス回路基板およびその製造方法
WO2017006661A1 (ja) * 2015-07-09 2017-01-12 株式会社東芝 セラミックス金属回路基板およびそれを用いた半導体装置
JP2018145047A (ja) * 2017-03-03 2018-09-20 Ｄｏｗａメタルテック株式会社 金属−セラミックス回路基板の製造方法

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JP3648189B2 (ja) * 2001-09-28 2005-05-18 同和鉱業株式会社 金属−セラミックス回路基板
JP3714557B2 (ja) * 2003-04-21 2005-11-09 日立金属株式会社 セラミックス基板用ろう材及びこれを用いたセラミックス回路基板、パワー半導体モジュール
JP4765110B2 (ja) * 2005-03-31 2011-09-07 Ｄｏｗａメタルテック株式会社 金属−セラミックス接合基板およびその製造方法
JP5045613B2 (ja) * 2008-08-25 2012-10-10 三菱マテリアル株式会社 パワーモジュール用基板及びその製造方法

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JP2016074565A (ja) * 2014-10-07 2016-05-12 Ｄｏｗａメタルテック株式会社 金属−セラミックス回路基板およびその製造方法
WO2017006661A1 (ja) * 2015-07-09 2017-01-12 株式会社東芝 セラミックス金属回路基板およびそれを用いた半導体装置
JP6797797B2 (ja) 2015-07-09 2020-12-09 株式会社東芝 セラミックス金属回路基板およびそれを用いた半導体装置
JP2018145047A (ja) * 2017-03-03 2018-09-20 Ｄｏｗａメタルテック株式会社 金属−セラミックス回路基板の製造方法

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