WO2023155085A1 - 半导体材料、发光器件、显示面板及显示装置 - Google Patents

半导体材料、发光器件、显示面板及显示装置 Download PDF

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WO2023155085A1
WO2023155085A1 PCT/CN2022/076567 CN2022076567W WO2023155085A1 WO 2023155085 A1 WO2023155085 A1 WO 2023155085A1 CN 2022076567 W CN2022076567 W CN 2022076567W WO 2023155085 A1 WO2023155085 A1 WO 2023155085A1
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oxide
compound
semiconductor material
thin film
semiconductor
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PCT/CN2022/076567
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English (en)
French (fr)
Inventor
袁广才
胡合合
刘凤娟
宁策
李正亮
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京东方科技集团股份有限公司
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Priority to CN202280000202.9A priority Critical patent/CN116941045A/zh
Priority to PCT/CN2022/076567 priority patent/WO2023155085A1/zh
Priority to US18/016,899 priority patent/US20240128327A1/en
Publication of WO2023155085A1 publication Critical patent/WO2023155085A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Definitions

  • the present disclosure relates to the field of display technology, in particular to a semiconductor material, a light emitting device, a display panel and a display device.
  • Thin Film Transistor is the core device of the display device, and each pixel in the display device relies on the TFT for switching and driving.
  • the thin film transistor mainly includes an oxide thin film transistor and an amorphous silicon thin film transistor. Oxide thin film transistors have high mobility, can improve the resolution of display devices, and are more and more widely used in display devices.
  • the active layer of the oxide thin film transistor is respectively connected to the source and drain of the oxide thin film transistor.
  • the active layer of the oxide thin film transistor is a semiconductor material. The mobility of the semiconductor material is currently low, and it is easily affected by light, which affects the stability of the oxide thin film transistor.
  • Embodiments of the present disclosure provide a semiconductor material, a light emitting device, a display panel, and a display device.
  • an embodiment of the present disclosure provides a semiconductor material, including: an oxide of the first element, an oxide of the second element, an oxide of the third element, an oxide of the fourth element and a compound of the fifth element At least two of, and at least including an oxide of the first element and a compound of the fifth element;
  • the first element includes at least one of In, Zn, Sn, Cd, Tl, Pb;
  • the second element includes at least one of Ta, Ga, W, Ba, V, Hf, and Nb;
  • the third element includes at least one of Sn, Zr, Cr, Si;
  • the fourth element includes at least one of Zn, Al, Sn, Ta, Hf, Zr, Ti;
  • the compound of the fifth element includes M x A, M includes at least one of Ce, Pr, Nd, Pm, Sm, Tb and Dy; A includes O, N, S, Se, Te, Br, I, As and B At least one of x is greater than zero.
  • the mass ratio of the oxide of the first element, the oxide of the second element, the oxide of the third element, the oxide of the fourth element and the compound of the fifth element is (55%-90%): ( 0% ⁇ 10%): (0% ⁇ 10%): (0% ⁇ 10%): (0.0001% ⁇ 15%).
  • the first element includes at least one of In, Zn, Sn; and/or
  • the second element includes at least one of Ta, Ga, W; and/or
  • the third element includes Sn; and/or
  • the fourth element includes at least one of Zn, Al, Ta; and/or
  • M includes at least one of Pr, Sm, and Tb, and A includes at least one of O, N, and B.
  • the semiconductor material includes: an oxide of a first element, an oxide of a second element, a compound of an oxide of a third element and a fifth element, the first element is In, and the second element is Ta, the third element is Sn, and the compound of the fifth element is an oxide of Pr; or
  • the semiconductor material includes: an oxide of the first element, an oxide of the second element, a compound of the oxide of the fourth element and the fifth element, the first element is In, and the second element is Ta, so The fourth element is Zn, and the compound of the fifth element is an oxide of Pr; or
  • the semiconductor material includes: an oxide of a first element, an oxide of a second element, an oxide of a third element, a compound of an oxide of a fourth element and a fifth element, the first element is In, and the The second element is Ta, the third element is Sn, the fourth element is Al, and the compound of the fifth element is a B compound of Tb; or
  • the semiconductor material includes: an oxide of the first element, an oxide of the second element, a compound of the oxide of the fourth element and the fifth element, the first element is In and Zn, and the second element is Ta , the fourth element is Al, and the compound of the fifth element is a B compound of Tb; or
  • the semiconductor material includes: an oxide of a first element, an oxide of a second element, a compound of an oxide of a third element and a fifth element, the first element is In, and the second element is W, so The third element is Sn, and the compound of the fifth element is B compound of Tb; or
  • the semiconductor material includes: an oxide of a first element, an oxide of a second element, a compound of an oxide of a third element and a fifth element, the first element is In, and the second element is Ta, so The fourth element is Zn, and the compound of the fifth element is an oxide of Tb; or
  • the semiconductor material includes: an oxide of a first element, an oxide of a second element, an oxide of a third element, a compound of an oxide of a fourth element and a fifth element, the first element is In, and the The second element is Ta, the third element is Sn, the fourth element is Zn, and the compound of the fifth element is an oxide of Pr; or
  • the semiconductor material includes: an oxide of a first element, an oxide of a second element, an oxide of a third element, a compound of an oxide of a fourth element and a fifth element, the first element is In, and the The second element is Ta, the third element is Sn, the fourth element is Zn, and the compound of the fifth element is B compound of Tb.
  • embodiments of the present disclosure provide a light emitting device, including a semiconductor thin film, where the semiconductor thin film includes the semiconductor material described in the above embodiments.
  • the carrier concentration of the semiconductor thin film is less than or equal to 5 ⁇ 10 19 cm -3 .
  • the mobility of the semiconductor thin film is 30-200 cm 2 /Vs.
  • the thickness of the semiconductor thin film is 20nm-100nm.
  • the semiconductor thin film has a microcrystalline structure.
  • the light emitting device also includes:
  • the semiconductor thin film is arranged on the gate insulating layer, and the semiconductor thin film has a source and a drain on it.
  • embodiments of the present disclosure provide a display panel, including the light emitting device described in the above embodiments.
  • embodiments of the present disclosure provide a display device, including the display panel described in the above embodiments.
  • Fig. 1 is an electron microscope picture that the oxide of aluminum forms microcrystalline structure
  • Fig. 2 is an enlarged schematic diagram of part A in Fig. 1;
  • Fig. 3 is the TFT characteristic curve of InTaSnPrOy semiconductor material film in embodiment 1;
  • Fig. 4 is the light stability test curve of InTaSnPrOy semiconductor material film in embodiment 1;
  • Fig. 5 is a schematic structural diagram of a light emitting device in an embodiment of the present disclosure.
  • Fig. 6 is the TFT characteristic curve of InTaZnPrOy semiconductor material film in embodiment 4.
  • Fig. 7 is the light stability test curve of the InTaSnPrO y semiconductor material thin film in Example 4.
  • drain 32 drain
  • the semiconductor material of the embodiment of the present disclosure includes: at least two of an oxide of the first element, an oxide of the second element, an oxide of the third element, an oxide of the fourth element, and a compound of the fifth element, and It includes at least an oxide of the first element and a compound of the fifth element.
  • the semiconductor material includes: the oxide of the first element, the oxide of the second element, the oxide of the third element, the compound of the fifth element, or the semiconductor material includes: the oxide of the first element, the oxide of the second element compounds, oxides of the third element, oxides of the fourth element and compounds of the fifth element.
  • the first element, the second element, the third element, the fourth element and the fifth element may include at least four elements in total, such as five, the first element, the second element, the third element, the fourth element and the fifth element Each of the elements has one kind of element, and the first element, the second element, the third element, the fourth element and the fifth element are different from each other.
  • the first element may include at least one of In (indium), Zn (zinc), Sn (tin), Cd (cadmium), Tl (thallium), Pb (lead), for example, the first element may include In and Zn , the oxide of the first element may include IZO (indium zinc oxide), which may improve the mobility of the material.
  • the first element may be a metal element with a large-radius ns orbital in the outermost electron shell of the cation, and has high mobility.
  • the second element may include at least one of Ta (tantalum), Ga (gallium), W (tungsten), Ba (barium), V (vanadium), Hf (hafnium), and Nb (niobium), for example, the second element Ta or Nb may be included, and the oxide of the second element may include tantalum pentoxide (Ta 2 O 5 ). Ga and W are not eroded by air at room temperature, and Ta (tantalum) has an atomic number of 73 and has extremely high corrosion resistance. The second element has better anti-H (hydrogen) oxygen fixation effect.
  • the third element may include at least one of Sn (tin), Zr (zirconium), Cr (chromium), Si (silicon), for example, the third element may include Sn or Cr, and the oxide of the third element may include SnO 2.
  • the oxide of the third element may include one or more of Cr 2 O 3 , CrO 3 and CrO 2 .
  • the third element may be Sn, and the acid corrosion resistance can be improved through the third element.
  • the fourth element may include at least one of Zn (zinc), Al (aluminum), Sn (tin), Ta (tantalum), Hf (hafnium), Zr (zirconium), and Ti (titanium), for example, the fourth element Zn or Al may be included, and the fourth element may include Zn and Sn.
  • the ability to form microcrystals can be improved by the fourth element, which is beneficial to improve stability.
  • the compound of the fifth element may include M x A, and M includes at least one of Ce (cerium), Pr (praseodymium), Nd (neodymium), Pm (promethium), Sm (samarium), Tb (terbium) and Dy (dysprosium).
  • A; A includes O (oxygen), N (nitrogen), S (sulfur), Se (selenium), Te (tellurium), Br (bromine), I (iodine), As (arsenic), and B (boron) At least one of , x greater than zero.
  • M x A can be CeO 2 or CeS
  • M x A can include PrBr 3 , Pr 2 Br 5 , PrI 2 , PrI 3 , Pr 2 I 5 , PrO 2 , Pr 2 O 3 , PrSe, PrTe, Pr 2 At least one of Te 3 and PrN.
  • the minimum energy required for the fd transition of the M element can be greater than 2.48eV and less than 2.64eV.
  • the semiconductor material may be amorphous, and the semiconductor material may have a microcrystalline structure.
  • the mobility of the semiconductor material in the present disclosure can be high and have better stability, and the semiconductor material in the disclosure can be used to prepare the active layer of the oxide thin film transistor, which can improve the mobility of the TFT and improve stability.
  • Semiconductor materials can be used to make targets, flexible or glass-based thin-film transistor devices and displays, such as flexible or glass-based thin-film transistors and displays made of stacked channels containing semiconductor materials, which can improve the display effect.
  • the mass ratio of the oxide of the first element, the oxide of the second element, the oxide of the third element, the oxide of the fourth element and the compound of the fifth element may be (55% to 90% ):(0% ⁇ 10%):(0% ⁇ 10%):(0% ⁇ 10%):(0.0001% ⁇ 15%).
  • the mass ratio of the oxide of the first element, the oxide of the second element, the oxide of the third element, the oxide of the fourth element and the compound of the fifth element may be (55%-90%): (0.0001% ⁇ 5%): (5% ⁇ 10%): (3% ⁇ 5%): (1% ⁇ 10%).
  • the mass ratio of the oxide of the first element, the oxide of the second element, the oxide of the third element, the oxide of the fourth element and the compound of the fifth element can be 70%:5%:10%:5 %: 10%, the specific mass ratio can be reasonably adjusted according to the actual situation.
  • the first element may include at least one of In, Zn, and Sn.
  • the second element may include at least one of Ta, Ga, W.
  • the third element may include Sn.
  • the fourth element may include at least one of Zn, Al and Ta.
  • M may include at least one of Pr, Sm, and Tb, and A may include at least one of O, N, and B.
  • the first element may be In, the second element may be Ta, the third element may be Sn, the fourth element may be Zn, M may be Pr, and A may include O or B. It can make the material have higher mobility, resistance to H-fixed oxygen, resistance to acid corrosion, better overall stability, and not easily affected by light.
  • the semiconductor material may include: an oxide of a first element, an oxide of a second element, a compound of an oxide of a third element and a fifth element, the first element is In, and the second element is In.
  • the element is Ta, the third element is Sn, and the compound of the fifth element is an oxide of Pr.
  • the semiconductor material may include: an oxide of a first element, an oxide of a second element, a compound of an oxide of a fourth element and a fifth element, the first element is In, and the second element is Ta, the fourth element is Zn, and the compound of the fifth element is an oxide of Pr.
  • the semiconductor material includes: an oxide of the first element, an oxide of the second element, an oxide of the third element, a compound of the oxide of the fourth element and the fifth element, the first element is In, and the second The element is Ta, the third element is Sn, the fourth element is Al, and the compound of the fifth element is B compound of Tb.
  • the semiconductor material includes: an oxide of the first element, an oxide of the second element, a compound of the oxide of the fourth element and the fifth element, the first element is In and Zn, the second element is Ta, and the second element is Ta.
  • the fourth element is Al, and the compound of the fifth element is the B compound of Tb.
  • the semiconductor material may include: an oxide of a first element, an oxide of a second element, a compound of an oxide of a third element and a fifth element, the first element is In, and the second element is W, the third element is Sn, and the compound of the fifth element is Tb B compound (terbium boride).
  • the semiconductor material may include: an oxide of a first element, an oxide of a second element, a compound of an oxide of a third element and a fifth element, the first element is In, and the second element is Ta, the fourth element is Zn, and the compound of the fifth element is Tb oxide.
  • the semiconductor material may include: an oxide of the first element, an oxide of the second element, an oxide of the third element, a compound of the oxide of the fourth element and the fifth element, the first element is In, and the second element is In.
  • the second element is Ta
  • the third element is Sn
  • the fourth element is Zn
  • the compound of the fifth element is an oxide of Pr.
  • the semiconductor material may include: an oxide of the first element, an oxide of the second element, an oxide of the third element, a compound of the oxide of the fourth element and the fifth element, the first element is In, and the second element is In.
  • the second element is Ta
  • the third element is Sn
  • the fourth element is Zn
  • the compound of the fifth element is Tb B compound.
  • An embodiment of the present disclosure provides a light emitting device, including a semiconductor thin film, and the semiconductor thin film may include the semiconductor material described in the above embodiments.
  • the light-emitting device with the semiconductor material in the above embodiment has good light-emitting effect and high stability.
  • the carrier concentration of the semiconductor thin film may be less than or equal to 5 ⁇ 10 19 cm ⁇ 3 , and the carrier concentration of the semiconductor thin film may be 4 ⁇ 10 19 cm ⁇ 3 .
  • the higher the carrier concentration the more the material is biased towards a conductor, and the threshold voltage Vth is more likely to be negatively biased.
  • the carrier concentration can be less than or equal to 5 ⁇ 10 19 cm -3 to ensure that Vth is controllable.
  • the mobility of the semiconductor thin film is 30-200 cm 2 /Vs, for example, the mobility of the semiconductor thin film is 40 cm 2 /Vs.
  • the thickness of the semiconductor thin film is 20nm-100nm.
  • the thickness of the semiconductor thin film can be 30nm, 40nm or 50nm, and the specific thickness can be selected according to the actual conditions of the light emitting device.
  • the semiconductor thin film has a microcrystalline structure, which is beneficial to improve mobility and stability.
  • the light-emitting device further includes: a substrate 10, a gate insulating layer 20, the substrate 10 has a gate layer 11, the gate insulating layer 20 covers the gate layer 11, and a semiconductor thin film 30 is disposed on the gate insulating layer 20, and the semiconductor thin film 30 has a source 31 and a drain 32 thereon.
  • the semiconductor thin film 30 can be used as the active layer, and the semiconductor thin film 30 can be connected to the source electrode 31 and the drain electrode 32 respectively.
  • the oxide thin film transistor works, carriers are generated in the active layer, and the source electrode 31 and the drain electrode connected to the active layer
  • the electrode 32 is turned on, so that the oxide thin film transistor is turned on and starts to work.
  • the semiconductor thin film 30 is not easily affected by light as an active layer, and photogenerated carriers will not be generated when the active layer is irradiated by light, which ensures the stability of the oxide thin film transistor and the stability of the light emitting device.
  • a semiconductor material in the embodiment of the present disclosure can be prepared as a semiconductor material film, and the semiconductor material film is: a small amount of Ta oxide can be doped in the indium oxide semiconductor film by ceramic target magnetron sputtering to improve the resistance to H solid oxygen Ability, a small amount of Sn oxide is added to improve acid corrosion resistance, and Pr oxide is added to improve light stability.
  • Form InTaSnPrO y (y is greater than zero) semiconductor material InTaSnPrO y semiconductor material represents the oxide of In, Ta, Sn, Pr four kinds of elements, the mass ratio that the oxide of In occupies is 86%, the oxide of Ta occupies The mass ratio was 3%, the mass ratio of Sn oxides was 8, and the mass ratio of Pr oxides was 3%.
  • the thickness of the InTaSnPrO y semiconductor material thin film is 50nm, and the carrier concentration is less than 5 ⁇ 10 19 cm -3 .
  • the TFT characteristics can be shown in FIG. 3 and Table 1.
  • the threshold voltage of the TFT characteristics is 1.5V, and the mobility is 40cm 2 /Vs.
  • the oxide of a small amount of Ta can be mixed in the indium oxide semiconductor thin film by ceramic target magnetron sputtering method to improve the anti-H fixed oxygen ability, the oxide of a small amount of Sn can improve acid corrosion resistance, A small amount of Al oxide forms a microcrystalline structure (as shown in Figure 1 and Figure 2), and TbB 6 improves light stability.
  • TbB x InTaSnAlO y semiconductor material, y is greater than zero, oxides of In, Ta, Sn, Al and B compound of Tb (TbB 6 ), the mass ratio of In oxide is 83%, Ta The mass ratio of oxides of Sn is 3%, the mass ratio of Sn oxides is 8%, the mass ratio of Al oxides is 3%, and the mass ratio of Tb B compounds is 3%. .
  • the thickness of the TbB x : InTaSnAlO y semiconductor material thin film is 30nm, and the carrier concentration is less than 5 ⁇ 10 19 cm -3 .
  • the threshold voltage of TFT characteristics is 0.6V, and the mobility is 65cm 2 /Vs.
  • the threshold voltage offset ⁇ Vth reflecting light stability is -0.8V.
  • the semiconductor material is InTaSnPrO y material, y is greater than zero, and InTaSnPrO y represents oxides of four elements: In, Ta, Sn, and Pr. That is, the semiconductor material includes: the oxide of the first element, the oxide of the second element, the compound of the oxide of the third element and the fifth element, the first element is In, the second element is Ta, and the third element is Sn, and the compound of the fifth element is an oxide of Pr.
  • the mass ratio of In oxide, Ta oxide, Sn oxide and Pr oxide is: 90%: 1.2%: 8%: 0.8%, the thickness of the semiconductor material film is 30nm, and the carrier concentration is less than 5 ⁇ 10 19 cm -3 ; TFT characteristic threshold voltage is -1.2V, mobility is 76cm 2 /Vs, threshold voltage shift ⁇ Vth reflecting light stability is -3.5V.
  • the semiconductor material is InTaZnPrO y material, y is greater than zero, and InTaZnPrO y represents oxides of four elements: In, Ta, Zn, and Pr. That is, the semiconductor material may include: an oxide of the first element, an oxide of the second element, a compound of the oxide of the fourth element and the fifth element, the first element is In, the second element is Ta, the fourth element is The element is Zn, the compound of the fifth element is Pr oxide, the mass ratio of In oxide, Ta oxide, Zn oxide and Pr oxide is: 90%, 2%, 6.5%, 1.5% .
  • the thickness of the semiconductor material film is 30nm, and the carrier concentration is less than 5 ⁇ 10 19 cm -3 ; TFT characteristics can be shown in Figure 6 and Table 2, and the mobility is 49cm 2 /Vs.
  • Figure 7 is the light stability test curve, the threshold voltage offset ⁇ Vth of the light stability is -2.5V, and the stability is good.
  • the semiconductor material is InWSnTbOB y material, y is greater than zero, and InWSnTbOB y represents oxides of In, Ta, Sn and B compounds of Tb. That is, the semiconductor material includes: the oxide of the first element, the oxide of the second element, the compound of the oxide of the third element and the fifth element, the first element is In, the second element is W, and the third element is Sn, and the compound of the fifth element is the B compound of Tb.
  • the mass ratio of In oxide, W oxide, Sn oxide and Tb B compound is: 90%:2%:6%:2%, the thickness of the semiconductor material film is 30nm, and the carrier concentration is less than 5 ⁇ 10 19 cm -3 ; the threshold voltage of TFT characteristics is 0.6V, the mobility is 48cm 2 /Vs, and the threshold voltage shift ⁇ Vth reflecting the light stability is -1.3V.
  • the semiconductor material is an InTaZnTbO material, and InTaZnTbO represents oxides of In, Ta, Zn, and Tb. That is, the semiconductor material includes: the oxide of the first element, the oxide of the second element, the oxide of the third element and the oxide of the fifth element, the first element is In, the second element is Ta, and the fourth element is The element is Zn, and the compound of the fifth element is an oxide of Tb.
  • the mass ratio of In oxide, Ta oxide, Zn oxide and Tb oxide is: 85%: 2%: 8%: 5%, the thickness of the semiconductor material film is 50nm, and the carrier concentration is less than 5% ⁇ 10 19 cm -3 ; the threshold voltage of TFT characteristics is 1.1V, the mobility is 35cm 2 /Vs, and the threshold voltage shift ⁇ Vth reflecting light stability is -0.2V.
  • the semiconductor material is InTaZnSnPrO material, and InTaZnSnPrO represents oxides of five elements including In, Ta, Zn, Sn, and Pr. That is, the semiconductor material includes: the oxide of the first element, the oxide of the second element, the oxide of the third element, the compound of the oxide of the fourth element and the fifth element, the first element is In, the second The element is Ta, the third element is Sn, the fourth element is Zn, and the compound of the fifth element is an oxide of Pr.
  • the mass ratio of the oxide of In, the oxide of Ta, the oxide of Sn, the oxide of Zn and the oxide of Pr is: 81%: 2%: 6.5%: 9%: 1.5%
  • the thickness of semiconductor material film is 30nm
  • the carrier concentration is less than 5 ⁇ 10 19 cm -3
  • the threshold voltage of TFT characteristics is 0.4V
  • the mobility is 41cm 2 /Vs
  • the threshold voltage offset ⁇ Vth reflecting the light stability is -1.8V.
  • the semiconductor material thin film in the above embodiments has high mobility and good stability.
  • Embodiments of the present disclosure provide a display panel, including the light-emitting device described in the above-mentioned embodiments.
  • the display panel having the light-emitting device in the above-mentioned embodiments has better display effect and good stability.
  • Embodiments of the present disclosure provide a display device, including the display panel described in the above embodiments.
  • the display device having the display panel in the above embodiments has better display effect and good stability.

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Abstract

公开了一种半导体材料、发光器件、显示面板及显示装置，半导体材料包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物、第四元素的氧化物与第五元素的化合物中的至少两种，且至少包括第一元素的氧化物与第五元素的化合物；第一元素包括In、Zn、Sn、Cd、Tl、Pb中至少一种，第二元素包括Ta、Ga、W、Ba、V、Hf、Nb中至少一种，第三元素包括Sn、Zr、Cr、Si中至少一种，第四元素包括Zn、Al、Sn、Ta、Hf、Zr、Ti中至少一种，第五元素的化合物包括M xA，M包括Ce、Pr、Nd、Pm、Sm、Tb和Dy中至少一种；A包括O、N、S、Se、Te、Br、I、As和B中至少一种。半导体材料迁移率高，稳定性好，可以提高TFT迁移率和提高稳定性。

Description

半导体材料、发光器件、显示面板及显示装置 技术领域
本公开涉及显示技术领域，具体涉及一种半导体材料、发光器件、显示面板及显示装置。
背景技术
薄膜晶体管(Thin Film Transistor，TFT)是显示装置的核心器件，显示装置中的每一个像素均依赖薄膜晶体管进行开关和驱动。根据薄膜晶体管的有源层的半导体材料的不同，薄膜晶体管主要包括氧化物薄膜晶体管和非晶硅薄膜晶体管。氧化物薄膜晶体管具有较高的迁移率，可以提高显示装置的分辨率，在显示装置中的应用越来越广泛。
氧化物薄膜晶体管的有源层分别连接氧化物薄膜晶体管的源极和漏极，在氧化物薄膜晶体管工作时，有源层中产生载流子，有源层连接的源极和漏极导通，使得该氧化物薄膜晶体管导通开始工作。氧化物薄膜晶体管的有源层为半导体材料，半导体材料的迁移率目前较低，容易受到光的影响，影响氧化物薄膜晶体管的稳定性。
发明内容
本公开实施例提供了一种半导体材料、发光器件、显示面板及显示装置。
第一方面，本公开实施例提供一种半导体材料，包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物、第四元素的氧化物与第五元素的化合物中的至少两种，且至少包括第一元素的氧化物与第五元素的化合物；
所述第一元素包括In、Zn、Sn、Cd、Tl、Pb中的至少一种；
所述第二元素包括Ta、Ga、W、Ba、V、Hf、Nb中的至少一种；
所述第三元素包括Sn、Zr、Cr、Si中的至少一种；
所述第四元素包括Zn、Al、Sn、Ta、Hf、Zr、Ti中的至少一种；
第五元素的化合物包括M xA，M包括Ce、Pr、Nd、Pm、Sm、Tb和Dy中的至少一种；A包括O、N、S、Se、Te、Br、I、As和B中的至少一种，x 大于零。
可选地，第一元素的氧化物、第二元素的氧化物、第三元素的氧化物、第四元素的氧化物与第五元素的化合物的质量比为(55％～90％)：(0％～10％)：(0％～10％)：(0％～10％)：(0.0001％～15％)。
可选地，所述第一元素包括In、Zn、Sn的至少一种；和/或
所述第二元素包括Ta、Ga、W中的至少一种；和/或
所述第三元素包括Sn；和/或
所述第四元素包括Zn、Al、Ta中的至少一种；和/或
M包括Pr、Sm、Tb中的至少一种，A包括O、N、B中的至少一种。
可选地，所述半导体材料包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物与第五元素的化合物，所述第一元素为In，所述第二元素为Ta，所述第三元素为Sn，第五元素的化合物为Pr的氧化物；或者
所述半导体材料包括：第一元素的氧化物、第二元素的氧化物、第四元素的氧化物与第五元素的化合物，所述第一元素为In，所述第二元素为Ta，所述第四元素为Zn，第五元素的化合物为Pr的氧化物；或者
所述半导体材料包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物、第四元素的氧化物与第五元素的化合物，所述第一元素为In，所述第二元素为Ta，所述第三元素为Sn、所述第四元素为Al，第五元素的化合物为Tb的B化物；或者
所述半导体材料包括：第一元素的氧化物、第二元素的氧化物、第四元素的氧化物与第五元素的化合物，所述第一元素为In与Zn，所述第二元素为Ta，所述第四元素为Al，第五元素的化合物为Tb的B化物；或者
所述半导体材料包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物与第五元素的化合物，所述第一元素为In，所述第二元素为W，所述第三元素为Sn，第五元素的化合物为Tb的B化物；或者
所述半导体材料包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物与第五元素的化合物，所述第一元素为In，所述第二元素为Ta，所述第四元素为Zn，第五元素的化合物为Tb的氧化物；或者
所述半导体材料包括：第一元素的氧化物、第二元素的氧化物、第三元 素的氧化物、第四元素的氧化物与第五元素的化合物，所述第一元素为In，所述第二元素为Ta，所述第三元素为Sn、所述第四元素为Zn，第五元素的化合物为Pr的氧化物；或者
所述半导体材料包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物、第四元素的氧化物与第五元素的化合物，所述第一元素为In，所述第二元素为Ta，所述第三元素为Sn、所述第四元素为Zn，第五元素的化合物为Tb的B化物。
第二方面，本公开实施例提供一种发光器件，包括半导体薄膜，所述半导体薄膜包括上述实施例中所述的半导体材料。
可选地，所述半导体薄膜的载流子浓度小于或等于5×10 19cm -3。
可选地，所述半导体薄膜的迁移率为30～200cm 2/Vs。
可选地，所述半导体薄膜的厚度为20nm-100nm。
可选地，所述半导体薄膜中具有微晶结构。
可选地，所述发光器件还包括：
基板，所述基板上具有栅极层；
栅极绝缘层，所述栅极绝缘层覆盖所述栅极层；
所述半导体薄膜设置在所述栅极绝缘层上，所述半导体薄膜上具有源极和漏极。
第三方面，本公开实施例提供一种显示面板，包括上述实施例中所述的发光器件。
第四方面，本公开实施例提供一种显示装置，包括上述实施例中所述的显示面板。
附图说明
图1是铝的氧化物形成微晶结构的一个电镜图；
图2是图1中局部A的一个放大示意图；
图3是实施例1中InTaSnPrO y半导体材料薄膜的TFT特性曲线；
图4是实施例1中InTaSnPrO y半导体材料薄膜的光照稳定性测试曲线；
图5是本公开实施例中发光器件的一个结构示意图；
图6是实施例4中InTaZnPrO y半导体材料薄膜的TFT特性曲线；
图7是实施例4中InTaSnPrO y半导体材料薄膜的光照稳定性测试曲线。
附图标记
基板10；栅极层11；
栅极绝缘层20；
半导体薄膜30；
源极31；漏极32。
具体实施方式
下面结合附图1至图7所示，通过具体的实施例对本公开实施例提供的半导体材料进行详细地说明。
本公开实施例的半导体材料包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物、第四元素的氧化物与第五元素的化合物中的至少两种，，且至少包括第一元素的氧化物与第五元素的化合物。比如，半导体材料包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物、第五元素的化合物，或者半导体材料包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物、第四元素的氧化物与第五元素的化合物。第一元素、第二元素、第三元素、第四元素与第五元素中总共可以包括至少四种元素，比如五种，第一元素、第二元素、第三元素、第四元素与第五元素中分别具有一种元素，第一元素、第二元素、第三元素、第四元素与第五元素中的元素不同。第一元素可以包括In(铟)、Zn(锌)、Sn(锡)、Cd(镉)、Tl(铊)、Pb(铅)中的至少一种，比如，第一元素可以包括In和Zn，第一元素的氧化物可以包括IZO(氧化铟锌)，可以提高材料的迁移率提高。第一元素可以是阳离子最外层电子层为大半径ns轨道的金属元素，迁移率高。
第二元素可以包括Ta(钽)、Ga(镓)、W(钨)、Ba(钡)、V(钒)、Hf(铪)、Nb(铌)中的至少一种，比如，第二元素可以包括Ta或Nb，第二元素的氧化物可以包括五氧化二钽(Ta 2O 5)。Ga、W常温下不受空气侵蚀，Ta(钽)原子序数为73，具有极高的抗腐蚀性。第二元素具有较好的抗H (氢)固氧作用。第三元素可以包括Sn(锡)、Zr(锆)、Cr(铬)、Si(硅)中的至少一种，比如，第三元素可以包括Sn或Cr，第三元素的氧化物可以包括SnO 2，第三元素的氧化物可以包括Cr 2O 3、CrO 3和CrO 2中的一种或多种。第三元素可以为Sn，通过第三元素可以提高抗酸蚀能力。第四元素可以包括Zn(锌)、Al(铝)、Sn(锡)、Ta(钽)、Hf(铪)、Zr(锆)、Ti(钛)中的至少一种，比如，第四元素可以包括Zn或Al，第四元素可以包括Zn与Sn。通过第四元素可以提高形成微晶的能力，有利于提高稳定性。第五元素的化合物可以包括M xA，M包括Ce(铈)、Pr(镨)、Nd(钕)、Pm(钷)、Sm(钐)、Tb(铽)和Dy(镝)中的至少一种；A包括O(氧)、N(氮)、S(硫)、Se(硒)、Te(碲)、Br(溴)、I(碘)、As(砷)和B(硼)中的至少一种，x大于零。比如，M xA可以为CeO 2或CeS，M xA可以包括PrBr 3、Pr 2Br 5、PrI 2、PrI 3、Pr 2I 5、PrO 2、Pr 2O 3、PrSe、PrTe、Pr 2Te 3与PrN中的至少一种。M元素发生f-d跃迁所需的最小能量可以大于2.48eV且小于2.64eV。半导体材料可以为非晶，半导体材料中可以具有微晶结构。
通过在半导体材料中添加上述化合物，可以使得本公开中半导体材料的迁移率高，具有较好的稳定性，利用本公开中的半导体材料制备氧化物薄膜晶体管的有源层，可以提高TFT迁移率和提高稳定性。半导体材料可以制作靶材、柔性或者玻璃基薄膜晶体管器件及显示器，比如可以应用于包含半导体材料的叠层沟道制作的柔性或者玻璃基薄膜晶体管及显示器，可以提高显示效果。
在一些实施例中，第一元素的氧化物、第二元素的氧化物、第三元素的氧化物、第四元素的氧化物与第五元素的化合物的质量比可以为(55％～90％)：(0％～10％)：(0％～10％)：(0％～10％)：(0.0001％～15％)。可选地，第一元素的氧化物、第二元素的氧化物、第三元素的氧化物、第四元素的氧化物与第五元素的化合物的质量比可以为(55％～90％)：(0.0001％～5％)：(5％～10％)：(3％～5％)：(1％～10％)。比如，第一元素的氧化物、第二元素的氧化物、第三元素的氧化物、第四元素的氧化物与第五元素的化合物的质量比可以为70％：5％：10％：5％：10％，具体的质量比例可以根据实际情况合理的调整。
在本公开的实施例中，第一元素可以包括In、Zn、Sn的至少一种。可选 地，第二元素可以包括Ta、Ga、W中的至少一种。可选地，第三元素可以包括Sn。可选地，第四元素可以包括Zn、Al、Ta中的至少一种。M可以包括Pr、Sm、Tb中的至少一种，A可以包括O、N、B中的至少一种。比如，第一元素可以为In，第二元素可以为Ta，第三元素可以为Sn，第四元素可以为Zn，M可以为Pr，A可以包括O或B。可以使得材料具有较高的迁移率、抗H固氧，抗酸蚀能力，整体稳定性较好，不容易受到光的影响。
在一些实施例中，半导体材料可以包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物与第五元素的化合物，所述第一元素为In，所述第二元素为Ta，所述第三元素为Sn，第五元素的化合物为Pr的氧化物。
可选地，半导体材料可以包括：第一元素的氧化物、第二元素的氧化物、第四元素的氧化物与第五元素的化合物，所述第一元素为In，所述第二元素为Ta，所述第四元素为Zn，第五元素的化合物为Pr的氧化物。
可选地，半导体材料包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物、第四元素的氧化物与第五元素的化合物，第一元素为In，第二元素为Ta，第三元素为Sn，第四元素为Al，第五元素的化合物为Tb的B化物。
可选地，半导体材料包括：第一元素的氧化物、第二元素的氧化物、第四元素的氧化物与第五元素的化合物，第一元素为In与Zn，第二元素为Ta，第四元素为Al，第五元素的化合物为Tb的B化物。
可选地，半导体材料可以包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物与第五元素的化合物，所述第一元素为In，所述第二元素为W，所述第三元素为Sn，第五元素的化合物为Tb的B化物(铽的硼化物)。
可选地，半导体材料可以包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物与第五元素的化合物，所述第一元素为In，所述第二元素为Ta，所述第四元素为Zn，第五元素的化合物为Tb的氧化物。
可选地，半导体材料可以包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物、第四元素的氧化物与第五元素的化合物，第一元素为In，第二元素为Ta，第三元素为Sn、第四元素为Zn，第五元素的化合物为Pr的氧化物。
可选地，半导体材料可以包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物、第四元素的氧化物与第五元素的化合物，第一元素为In，第二元素为Ta，第三元素为Sn、第四元素为Zn，第五元素的化合物为Tb的B化物。
本公开实施例提供一种发光器件，包括半导体薄膜，半导体薄膜可以包括上述实施例中所述的半导体材料材料。具有上述实施例中半导体材料材料的发光器件，发光效果好，稳定性高。
在一些实施例中，半导体薄膜的载流子浓度可以小于或等于5×10 19cm -3，半导体薄膜的载流子浓度可以为4×10 19cm -3。载流子浓度越大，材料越偏向于导体，阈值电压Vth越容易负偏，载流子浓度可以小于或等于5×10 19cm -3能保证Vth可控的值。
可选地，半导体薄膜的迁移率为30～200cm 2/Vs，比如，半导体薄膜的迁移率为40cm 2/Vs。
可选地，半导体薄膜的厚度为20nm-100nm，比如，半导体薄膜的厚度可以为30nm、40nm或50nm，具体的厚度可以根据发光器件的实际情况选择。
在一些实施例中，所述半导体薄膜中具有微晶结构，有利于提高迁移率以及稳定性。
在本公开的实施例中，如图5所示，发光器件还包括：基板10、栅极绝缘层20，基板10上具有栅极层11，栅极绝缘层20覆盖栅极层11，半导体薄膜30设置在栅极绝缘层20上，半导体薄膜30上具有源极31和漏极32。半导体薄膜30可以作为有源层，半导体薄膜30可以分别连接源极31和漏极32，在氧化物薄膜晶体管工作时，有源层中产生载流子，有源层连接的源极31和漏极32导通，使得该氧化物薄膜晶体管导通开始工作。半导体薄膜30作为有源层不易受到光的影响，有源层受到光线照射的情况下不会产生光生载流子，保证氧化物薄膜晶体管的稳定性，保证发光器件的稳定性。
实施例1
本公开实施例中的一种半导体材料可以制备成半导体材料薄膜，半导体材料薄膜为：可以通过陶瓷靶磁控溅射方式在氧化铟半导体薄膜中掺入少量 Ta的氧化物以提高抗H固氧能力，掺入少量Sn的氧化物以提高抗酸蚀能力，掺入Pr的氧化物以改善光照稳定性。形成InTaSnPrO y(y大于零)半导体材料，InTaSnPrO y半导体材料表示In、Ta、Sn、Pr四种元素的氧化物，In的氧化物所占的质量比为86％，Ta的氧化物所占的质量比为3％，Sn的氧化物所占在的质量比为8％，Pr的氧化物所占的质量比为3％。
InTaSnPrO y半导体材料薄膜的厚度为50nm，载流子浓度小于5×10 19cm -3。TFT特性可以如图3所示以及表1所示，TFT特性的阈值电压为1.5V，迁移率为40cm 2/Vs。
表1 TFT特性测试数据
Figure PCTCN2022076567-appb-000001
NBTIS(负偏压温度稳定性，Negative bias temperature illumination stability测试条件：白光6000nits照射，Vgs＝-30V，Time＝3600s)。如图4所示，图4为光照稳定性测试曲线，光照稳定性的阈值电压偏移量ΔVth＝-1.7V，稳定性较好。
实施例2
本实施例的一种半导体材料薄膜，可以通过陶瓷靶磁控溅射方式在氧化铟半导体薄膜中掺入少量Ta的氧化物提高抗H固氧能力、少量Sn的氧化物提高抗酸蚀能力、少量Al的氧化物形成微晶结构(如图1和图2所示)、TbB 6改善光照稳定性。形成TbB x:InTaSnAlO y半导体材料，y大于零，In、Ta、Sn、 Al四种元素的氧化物以及Tb的B化物(TbB 6)，In的氧化物所占的质量比为83％，Ta的氧化物所占的质量比为3％，Sn的氧化物所占的质量比为8％，Al的氧化物所占的质量比为3％，Tb的B化物所占的质量比为3％。TbB x:InTaSnAlO y半导体材料薄膜的厚度为30nm，载流子浓度小于5×10 19cm -3。TFT特性的阈值电压为0.6V，迁移率为65cm 2/Vs。NBTIS(负偏压温度稳定性，Negative bias temperature illumination stability测试条件：白光6000nits照射，Vgs＝-30V，Time＝3600s)。体现光照稳定性的阈值电压偏移量ΔVth为-0.8V。
实施例3
半导体材料为InTaSnPrO y材料，y大于零，InTaSnPrO y表示In、Ta、Sn、Pr四种元素的氧化物。也即是，半导体材料包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物与第五元素的化合物，第一元素为In，第二元素为Ta，第三元素为Sn，第五元素的化合物为Pr的氧化物。
In的氧化物、Ta的氧化物、Sn的氧化物与Pr的氧化物的质量比例为：90％：1.2％：8％：0.8％，半导体材料薄膜的厚度为30nm，载流子浓度小于5×10 19cm -3；TFT特性阈值电压为-1.2V，迁移率为76cm 2/Vs，体现光照稳定性的阈值电压偏移量ΔVth为-3.5V。
实施例4
半导体材料为InTaZnPrO y材料，y大于零，InTaZnPrO y表示In、Ta、Zn、Pr四种元素的氧化物。也即是，半导体材料可以包括：第一元素的氧化物、第二元素的氧化物、第四元素的氧化物与第五元素的化合物，第一元素为In，第二元素为Ta，第四元素为Zn，第五元素的化合物为Pr的氧化物，In的氧化物、Ta的氧化物、Zn的氧化物与Pr的氧化物的质量比例为：90％、2％、6.5％、1.5％。
半导体材料薄膜的厚度为30nm，载流子浓度小于5×10 19cm -3；TFT特性可以如图6所示以及表2所示，迁移率为49cm 2/Vs。
表2 TFT特性测试数据
Figure PCTCN2022076567-appb-000002
NBTIS(负偏压温度稳定性，Negative bias temperature illumination stability测试条件：白光6000nits照射，Vgs＝-30V，Time＝3600s)。如图7所示，图7为光照稳定性测试曲线，光照稳定性的阈值电压偏移量ΔVth为-2.5V，稳定性较好。
实施例5
半导体材料为InWSnTbOB y材料，y大于零，InWSnTbOB y表示In、Ta、Sn三种元素的氧化物以及Tb的B化物。也即是，半导体材料包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物与第五元素的化合物，第一元素为In，第二元素为W，第三元素为Sn，第五元素的化合物为Tb的B化物。In的氧化物、W的氧化物、Sn的氧化物与Tb的B化物的质量比例为：90％:2％:6％:2％，半导体材料薄膜的厚度为30nm，载流子浓度小于5×10 19cm -3；TFT特性的阈值电压为0.6V，迁移率为48cm 2/Vs，体现光照稳定性的阈值电压偏移量ΔVth为-1.3V。
实施例6
半导体材料为InTaZnTbO材料，InTaZnTbO表示In、Ta、Zn的氧化物以及Tb的氧化物。也即是，半导体材料包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物与第五元素的氧化物，第一元素为In，第二元素 为Ta，第四元素为Zn，第五元素的化合物为Tb的氧化物。In的氧化物、Ta的氧化物、Zn的氧化物与Tb的氧化物的质量比例为：85％：2％：8％：5％，半导体材料薄膜的厚度为50nm，载流子浓度小于5×10 19cm -3；TFT特性的阈值电压为1.1V，迁移率为35cm 2/Vs，体现光照稳定性的阈值电压偏移量ΔVth为-0.2V。
实施例7
半导体材料为InTaZnSnPrO材料，InTaZnSnPrO表示In、Ta、Zn、Sn、Pr五种元素的氧化物。也即是，半导体材料包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物、第四元素的氧化物与第五元素的化合物，第一元素为In，第二元素为Ta，第三元素为Sn，第四元素为Zn，第五元素的化合物为Pr的氧化物。In的氧化物、Ta的氧化物、Sn的氧化物、Zn的氧化物与Pr的氧化物的质量比例为：81％：2％：6.5％：9％：1.5％，半导体材料薄膜的厚度为30nm，载流子浓度小于5×10 19cm -3；TFT特性的阈值电压为0.4V，迁移率为41cm 2/Vs，体现光照稳定性的阈值电压偏移量ΔVth为-1.8V。
上述实施例中的半导体材料薄膜迁移率较高，稳定性好。
本公开实施例提供一种显示面板，包括上述实施例中所述的发光器件，具有上述实施例中发光器件的显示面板，显示效果较好，稳定性好。
本公开实施例提供一种显示装置，包括上述实施例中所述的显示面板，具有上述实施例中显示面板的显示装置，显示效果较好，稳定性好。
以上所述仅是本公开的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本公开原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视本公开的保护范围。

Claims (12)

  1. 一种半导体材料，包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物、第四元素的氧化物与第五元素的化合物中的至少两种，且至少包括第一元素的氧化物与第五元素的化合物；
    所述第一元素包括In、Zn、Sn、Cd、Tl、Pb中的至少一种；
    所述第二元素包括Ta、Ga、W、Ba、V、Hf、Nb中的至少一种；
    所述第三元素包括Sn、Zr、Cr、Si中的至少一种；
    所述第四元素包括Zn、Al、Sn、Ta、Hf、Zr、Ti中的至少一种；
    第五元素的化合物包括M xA，M包括Ce、Pr、Nd、Pm、Sm、Tb和Dy中的至少一种；A包括O、N、S、Se、Te、Br、I、As和B中的至少一种，x大于零。
  2. 根据权利要求1所述的半导体材料，其中，第一元素的氧化物、第二元素的氧化物、第三元素的氧化物、第四元素的氧化物与第五元素的化合物的质量比为(55％～90％)：(0％～10％)：(0％～10％)：(0％～10％)：(0.0001％～15％)。
  3. 根据权利要求1所述的半导体材料，其中，
    所述第一元素包括In、Zn、Sn的至少一种；和/或
    所述第二元素包括Ta、Ga、W中的至少一种；和/或
    所述第三元素包括Sn；和/或
    所述第四元素包括Zn、Al、Ta中的至少一种；和/或
    M包括Pr、Sm、Tb中的至少一种，A包括O、N、B中的至少一种。
  4. 根据权利要求1所述的半导体材料，其中，
    所述半导体材料包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物与第五元素的化合物，所述第一元素为In，所述第二元素为Ta，所述第三元素为Sn，第五元素的化合物为Pr的氧化物；或者
    所述半导体材料包括：第一元素的氧化物、第二元素的氧化物、第四元素的氧化物与第五元素的化合物，所述第一元素为In，所述第二元素为Ta，所述第四元素为Zn，第五元素的化合物为Pr的氧化物；或者
    所述半导体材料包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物、第四元素的氧化物与第五元素的化合物，所述第一元素为In，所述第二元素为Ta，所述第三元素为Sn、所述第四元素为Al，第五元素的化合物为Tb的B化物；或者
    所述半导体材料包括：第一元素的氧化物、第二元素的氧化物、第四元素的氧化物与第五元素的化合物，所述第一元素为In与Zn，所述第二元素为Ta，所述第四元素为Al，第五元素的化合物为Tb的B化物；或者
    所述半导体材料包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物与第五元素的化合物，所述第一元素为In，所述第二元素为W，所述第三元素为Sn，第五元素的化合物为Tb的B化物；或者
    所述半导体材料包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物与第五元素的化合物，所述第一元素为In，所述第二元素为Ta，所述第四元素为Zn，第五元素的化合物为Tb的氧化物；或者
    所述半导体材料包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物、第四元素的氧化物与第五元素的化合物，所述第一元素为In，所述第二元素为Ta，所述第三元素为Sn、所述第四元素为Zn，第五元素的化合物为Pr的氧化物；或者
    所述半导体材料包括：第一元素的氧化物、第二元素的氧化物、第三元素的氧化物、第四元素的氧化物与第五元素的化合物，所述第一元素为In，所述第二元素为Ta，所述第三元素为Sn、所述第四元素为Zn，第五元素的化合物为Tb的B化物。
  5. 一种发光器件，包括半导体薄膜，所述半导体薄膜包括权利要求1-4中任一项所述的半导体材料。
  6. 根据权利要求5所述的发光器件，其中，所述半导体薄膜的载流子浓度小于或等于5×10 19cm -3。
  7. 根据权利要求5所述的发光器件，其中，所述半导体薄膜的迁移率为30～200cm 2/Vs。
  8. 根据权利要求5所述的发光器件，其中，所述半导体薄膜的厚度为20nm-100nm。
  9. 根据权利要求5所述的发光器件，其中，所述半导体薄膜中具有微晶结构。
  10. 根据权利要求5所述的发光器件，其中，还包括：
    基板，所述基板上具有栅极层；
    栅极绝缘层，所述栅极绝缘层覆盖所述栅极层；
    所述半导体薄膜设置在所述栅极绝缘层上，所述半导体薄膜上具有源极和漏极。
  11. 一种显示面板，包括权利要求5-10中任一项所述的发光器件。
  12. 一种显示装置，包括权利要求11所述的显示面板。
PCT/CN2022/076567 2022-02-17 2022-02-17 半导体材料、发光器件、显示面板及显示装置 WO2023155085A1 (zh)

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