WO2023148848A1 - 半導体装置及びその製造方法、並びに半導体装置用熱伝導シート - Google Patents

半導体装置及びその製造方法、並びに半導体装置用熱伝導シート Download PDF

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Publication number
WO2023148848A1
WO2023148848A1 PCT/JP2022/004086 JP2022004086W WO2023148848A1 WO 2023148848 A1 WO2023148848 A1 WO 2023148848A1 JP 2022004086 W JP2022004086 W JP 2022004086W WO 2023148848 A1 WO2023148848 A1 WO 2023148848A1
Authority
WO
WIPO (PCT)
Prior art keywords
heat
thermally conductive
conductive sheet
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/004086
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
寿枝 平野
正也 鳥羽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Resonac Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Resonac Corp filed Critical Resonac Corp
Priority to PCT/JP2022/004086 priority Critical patent/WO2023148848A1/ja
Priority to US18/834,229 priority patent/US20250132219A1/en
Priority to JP2023578245A priority patent/JPWO2023148848A1/ja
Publication of WO2023148848A1 publication Critical patent/WO2023148848A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H10W40/228—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area the projecting parts being wire-shaped or pin-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/258—Metallic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/794—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

  • the present disclosure relates to a semiconductor device, a manufacturing method thereof, and a heat conductive sheet for a semiconductor device.
  • a thermally conductive bonding material is sometimes provided between the heating element and the radiator in the semiconductor device in order to conduct the heat generated by the heating element including the semiconductor element to the radiator such as a heat sink or heat spreader.
  • Patent Literature 1 discloses a sheet-like heat radiating member containing silicone resin and thermally conductive powder.
  • Patent Document 2 discloses a thermally conductive bonding material made of a material in which a filler containing a thermally conductive material is dispersed in a resin. For these materials, heat is transferred by contact of thermally conductive powders or fillers.
  • the present disclosure relates to a semiconductor device capable of dissipating heat from a semiconductor component with high efficiency.
  • One aspect of the present disclosure relates to a semiconductor device including a semiconductor component including a semiconductor chip, a heat dissipation member, and a heat conductive sheet interposed between the semiconductor chip and the heat dissipation member.
  • the thermally conductive sheet includes a resin sheet having through holes, and a thermally conductive portion filled in the through holes.
  • Another aspect of the present disclosure is to provide, on a semiconductor component including a semiconductor chip, a thermally conductive sheet including a resin sheet having through holes and a thermally conductive portion filled in the through holes; and bonding a heat radiating member to the heat conductive sheet of .
  • Still another aspect of the present disclosure is to provide, on a heat radiating member, a heat conductive sheet including a resin sheet having a through hole and a heat conductive portion filled in the through hole, and the heat on the heat radiating member.
  • the present invention relates to a method of manufacturing a semiconductor device, including bonding a semiconductor component including a semiconductor chip to a conductive sheet.
  • Yet another aspect of the present disclosure relates to a thermally conductive sheet for a semiconductor device, including a resin sheet having through holes, and a thermally conductive portion filled in the through holes.
  • yet another aspect of the present disclosure is the use or application of a thermally conductive sheet including a resin sheet having through holes and a thermally conductive portion filled in the through holes for manufacturing a semiconductor device.
  • a semiconductor device capable of dissipating heat from a semiconductor chip with high efficiency can be provided.
  • the thermal conductivity may decrease due to sedimentation of the powder or filler, but in the case of the thermally conductive sheet according to the present disclosure, the efficiency in the thickness direction effective heat conduction is likely to be ensured more reliably.
  • FIG. 1 is a cross-sectional view showing an example of a semiconductor device
  • FIG. FIG. 4 is a cross-sectional view showing an example of a cross-sectional shape of a heat conducting part
  • It is a top view which shows an example of a thermally-conductive sheet.
  • It is process drawing which shows an example of the method of manufacturing a semiconductor device.
  • It is a perspective view which shows an example of a thermally-conductive sheet.
  • FIG. 1 is a cross-sectional view showing an example of a semiconductor device.
  • a semiconductor device 100 shown in FIG. 1 includes a wiring board 10, a semiconductor component 20 mounted on the wiring board 10, and solder bumps 25 interposed between the wiring board 10 and the semiconductor component 20 to electrically connect them. , the insulating resin layer 30 filled between the semiconductor component 20 and the wiring board 10, the heat radiation member 50 provided near the semiconductor component 20, and the heat interposed between the semiconductor component 20 and the heat radiation member 50 and a conductive sheet 40 .
  • Semiconductor component 20 may be a single semiconductor chip, or a chiplet or memory cube containing multiple semiconductor chips. A plurality of semiconductor components 20 may be mounted on one wiring board 10 .
  • the thermally conductive sheet 40 includes a resin sheet 41 having a plurality of through holes and thermally conductive portions 42 filled in the through holes.
  • the heat conducting portion 42 is exposed on both sides of the heat conducting sheet 40 and is thermally connected to the semiconductor component 20 and the heat dissipation member 50 .
  • Heat generated during operation of the semiconductor component 20 is efficiently transferred to the heat dissipation member 50 mainly through the heat conducting portion 42 of the heat conducting sheet 40 .
  • the thermally conductive sheet 40 is provided so as to cover part or all of the main surface of the semiconductor component 20 on the side of the heat radiating member 50 .
  • the main surface of the semiconductor component 20 covered with the heat conductive sheet 40 may be the back surface of the semiconductor chip opposite to the circuit surface.
  • the heat conductive sheet 40 and the heat dissipation member 50 may be provided on the side opposite to the circuit surface of the semiconductor chip forming the semiconductor component 20 .
  • the thickness of the heat conductive sheet 40 may be 10 ⁇ m or more and 500 ⁇ m or less, or 15 ⁇ m or more and 30 ⁇ m or less.
  • a heat-conducting sheet 40 having an appropriate thickness enables particularly efficient heat conduction and is hard to break.
  • the resin sheet 41 can contain, for example, thermoplastic resin, photosensitive resin, or thermosetting resin.
  • the resin sheet 41 may be a cured product of a thermosetting resin composition.
  • the resin sheet 41 may contain filler.
  • the filler may be an inorganic filler from the viewpoint of heat conduction efficiency.
  • inorganic fillers include alumina, silicon nitride, silica, copper, aluminum, silver, talc, mica, zinc, magnesium oxide, boron nitride, aluminum nitride, carbon black, graphite, and carbon fiber.
  • the content of the filler may be 30% by mass or more and 90% by mass or less based on the mass of the resin sheet 41 .
  • the resin sheet 41 may have relatively low thermal conductivity.
  • the thermal conductivity of the resin sheet 41 may be 0.1 W/m ⁇ K or more and 10 W/m ⁇ K or less.
  • the thermally conductive portion 42 has thermal conductivity higher than that of the resin sheet 41 .
  • the thermal conductivity of the heat conducting portion 42 may be higher than the thermal conductivity of the heat radiating member 50 .
  • the thermal conductivity of the heat conducting portion 42 may be 20 W/m ⁇ K or more and 90 W/m ⁇ K or less.
  • the heat conducting part 42 may contain metal. Examples of metals forming the heat conducting portion 42 include copper, silver, and aluminum. From the point of view of economy and the like, the heat conducting portion 42 may contain copper, and may contain copper plating in particular.
  • the heat conducting part 42 may be a metal layer made of metal paste.
  • the maximum width of the heat conducting portion 42 may be, for example, 10 ⁇ m or more and 1000 ⁇ m or less.
  • the maximum width here means the maximum width of the cross section perpendicular to the thickness direction of the heat conductive sheet 40 .
  • the cross-section of the heat-conducting portion 42 (the cross-section perpendicular to the thickness direction of the heat-conducting sheet 40) can have a circular, polygonal, or other arbitrary shape.
  • the heat conducting portion 42 may have a polygonal cross section.
  • FIG. 2 is a cross-sectional view showing some examples of the cross-sectional shape of the heat conducting portion 42.
  • (a) and (b) are examples of a non-convex polygonal cross section having an outer periphery forming irregularities
  • (c) is an example of a convex polygonal cross section.
  • a plurality of thermally conductive portions 42 may be arranged uniformly over the entire thermally conductive sheet, or may be arranged in a partial area.
  • FIG. 3 is a plan view showing an example of a thermally conductive sheet in which the thermally conductive portions 42 are unevenly arranged.
  • the thermally conductive portion 42 is arranged in a central portion 40 ⁇ /b>C of the thermally conductive sheet 40 .
  • the ratio of the total volume of the plurality of heat conductive portions 42 is 60% or more and 70% or less in the central portion 40C, and 30% or more and 40% or less in the regions other than the central portion 40C.
  • the heat dissipation member 50 may be a heat spreader or a heat sink.
  • the heat dissipation member 50 may be a lid that covers the entire semiconductor component 20 .
  • the material constituting the heat dissipation member 50 can be selected from ordinary materials used as heat spreaders or heat sinks.
  • the area of the main surface of the heat dissipating member 50 may be equal to the area of the main surface of the heat conductive sheet 40 or may be larger than the area of the main surface of the heat conductive sheet 40 .
  • the wiring substrate 10 includes a substrate 1, a wiring portion 3 provided on the substrate 1, an electrode pad 5 provided on the surface of the wiring portion 3 opposite to the substrate 1, and the electrode pad 5. and a surface insulating resin layer 7 having an opening through which the central portion is exposed.
  • the wiring board 10 may be a wiring board including an interposer.
  • the substrate 1 may be, for example, a silicon substrate, a glass substrate, a stainless steel substrate, or a glass cloth, or may be a semiconductor package having a semiconductor chip and a sealing resin layer for sealing the semiconductor chip.
  • the thickness of the base material 1 may be, for example, 0.2 mm or more and 2.0 mm or less.
  • a substrate having a thickness of 0.2 mm or more tends to have good handleability.
  • Substrates having a thickness of 2.0 mm or less are often advantageous in terms of manufacturing costs.
  • the substrate 1 may be a wafer with a circular major surface or a panel with a rectangular major surface.
  • the substrate 1 may be a wafer having a circular main surface with a diameter of 200 mm or more and 450 mm or less, or a panel having a rectangular main surface with a width of 300 mm or more and 700 mm or less.
  • the wiring part 3 may have an insulating resin layer and a wiring layer provided in the insulating resin layer.
  • the wiring section 3 may have a multilayer wiring structure including two or more wiring layers.
  • the electrode pad 5 may be a copper pad containing copper.
  • the thickness of the electrode pad 5 may be 1 ⁇ m or more and 20 ⁇ m or less, 3 ⁇ m or more and 15 ⁇ m or less, or 5 ⁇ m or more and 15 ⁇ m or less.
  • the surface insulating resin layer 7 can be made of, for example, a resist material commonly used for forming solder resists.
  • the openings in the surface insulating resin layer 7 can be formed by, for example, laser ablation, photolithography (exposure and development), or imprinting. For photolithography, a photosensitive resist material is used.
  • FIG. 4 is a process drawing showing an example of a method of manufacturing a semiconductor device.
  • the method shown in FIG. 4 includes steps of mounting a semiconductor component 20 on a wiring board 10, forming an insulating resin layer 30 filling a gap between the semiconductor component 20 and the wiring board 10, and forming a wiring board on which the semiconductor component 20 is mounted.
  • a step of providing a thermally conductive sheet 40 on the main surface opposite to 10 and a step of bonding a heat radiating member 50 to the thermally conductive sheet 40 on the semiconductor component 20 are included.
  • the wiring board 10 can be prepared by a normal method understood by those skilled in the art.
  • the process of mounting the semiconductor component 20 on the wiring board 10 and the process of forming the insulating resin layer 30 filling the space between the semiconductor component 20 and the wiring board 10 can be performed according to the usual method.
  • FIG. 5 is a perspective view showing an example of the heat conductive sheet 40 prepared in advance.
  • the resin sheet 41 may be a sheet formed of an uncured or semi-cured thermosetting resin composition.
  • the thermosetting resin composition forming the resin sheet 41 may be cured after the semiconductor component 20 is attached to the heat conductive sheet 40 .
  • a resin sheet 41 having a through hole may be formed on the semiconductor component 20, and then the heat conducting portion 42 filling the through hole may be formed.
  • the through holes (vias) in the resin sheet 41 can be formed by laser, photolithography, or mold, for example.
  • the thermally conductive portion 42 can be formed, for example, by electrolytic plating or printing of metal paste.
  • FIG. 6 is a process diagram showing another example of the method of manufacturing a semiconductor device.
  • the method shown in FIG. 6 includes a step of forming a resin sheet 41 having through holes 41a on a heat radiating member 50, and forming a heat conducting portion 42 filled in the through holes 41a, thereby dissipating heat from the heat conducting sheet 40.
  • a step of providing on the member 50 and a step of bonding the semiconductor component 20 mounted on the wiring substrate 10 to the thermal conductive sheet 40 on the heat dissipation member 50 are included.
  • a thermally conductive sheet 40 prepared in advance may be attached to the heat radiating member 50 .

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
PCT/JP2022/004086 2022-02-02 2022-02-02 半導体装置及びその製造方法、並びに半導体装置用熱伝導シート Ceased WO2023148848A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/JP2022/004086 WO2023148848A1 (ja) 2022-02-02 2022-02-02 半導体装置及びその製造方法、並びに半導体装置用熱伝導シート
US18/834,229 US20250132219A1 (en) 2022-02-02 2022-02-02 Semiconductor device, method for manufacturing semiconductor device, and thermally conductive sheet for semiconductor device
JP2023578245A JPWO2023148848A1 (https=) 2022-02-02 2022-02-02

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/004086 WO2023148848A1 (ja) 2022-02-02 2022-02-02 半導体装置及びその製造方法、並びに半導体装置用熱伝導シート

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026075025A1 (ja) * 2024-10-01 2026-04-09 デクセリアルズ株式会社 熱伝導シート、及び熱伝導シートの製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05259671A (ja) * 1992-01-07 1993-10-08 Toshiba Corp 放熱シートおよびその製造方法
JP2000345040A (ja) * 1999-06-02 2000-12-12 Denki Kagaku Kogyo Kk 熱伝導性シリコーン成形体の製造方法
JP2003110069A (ja) * 2001-09-28 2003-04-11 Kyocera Chemical Corp 熱伝導シートおよびそれを用いた複合部材
JP2006054221A (ja) * 2004-08-09 2006-02-23 Nitto Denko Corp 熱伝導シート
JP2020198333A (ja) * 2019-05-31 2020-12-10 アイシン精機株式会社 熱伝導シート及び熱伝導シート製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU703591B2 (en) * 1995-09-27 1999-03-25 Texas Instruments Incorporated Microelectronic assemblies including z-axis conductive films
JP2004172286A (ja) * 2002-11-19 2004-06-17 Kyocera Chemical Corp 熱伝導シート
JP4345686B2 (ja) * 2005-02-22 2009-10-14 三菱マテリアル株式会社 絶縁回路基板およびパワーモジュール
JP7098574B2 (ja) * 2019-05-28 2022-07-11 矢崎総業株式会社 放熱構造

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05259671A (ja) * 1992-01-07 1993-10-08 Toshiba Corp 放熱シートおよびその製造方法
JP2000345040A (ja) * 1999-06-02 2000-12-12 Denki Kagaku Kogyo Kk 熱伝導性シリコーン成形体の製造方法
JP2003110069A (ja) * 2001-09-28 2003-04-11 Kyocera Chemical Corp 熱伝導シートおよびそれを用いた複合部材
JP2006054221A (ja) * 2004-08-09 2006-02-23 Nitto Denko Corp 熱伝導シート
JP2020198333A (ja) * 2019-05-31 2020-12-10 アイシン精機株式会社 熱伝導シート及び熱伝導シート製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026075025A1 (ja) * 2024-10-01 2026-04-09 デクセリアルズ株式会社 熱伝導シート、及び熱伝導シートの製造方法

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