WO2023124292A1 - 多功能晶圆预处理腔及化学气相沉积设备 - Google Patents

多功能晶圆预处理腔及化学气相沉积设备 Download PDF

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WO2023124292A1
WO2023124292A1 PCT/CN2022/120453 CN2022120453W WO2023124292A1 WO 2023124292 A1 WO2023124292 A1 WO 2023124292A1 CN 2022120453 W CN2022120453 W CN 2022120453W WO 2023124292 A1 WO2023124292 A1 WO 2023124292A1
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Prior art keywords
wafer
heat
chamber
cooling
controller
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PCT/CN2022/120453
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English (en)
French (fr)
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封拥军
周东平
宋维聪
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上海陛通半导体能源科技股份有限公司
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Publication of WO2023124292A1 publication Critical patent/WO2023124292A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Definitions

  • the invention relates to the technical field of semiconductor manufacturing, in particular to a multifunctional wafer pretreatment chamber and chemical vapor deposition equipment.
  • Chip preparation usually requires multiple process stages such as film deposition, photoresist coating, exposure and development, etching, and ion implantation. Among them, some process stages need to be carried out at a high temperature higher than 200°C, for example, the temperature of the chemical vapor deposition process may be as high as 400-500°C.
  • the wafer is heated to 400-500°C in a very short period of time in the process chamber, and usually the center of the wafer is heated faster than the edge, which will cause irregular warpage of the wafer.
  • the thickness of the film gradually increases, and the edge-warping area produces a weight-offset distribution due to different film thicknesses, which will cause the wafer to slide, which in turn will cause problems such as failure of the robotic arm to pick up the film, so the wafer is entering the reaction Preheating the chamber is very important.
  • Existing wafer heating or preheating devices mostly adopt the method of heating the wafer placed on the surface through the heating base (that is, the heating base heats the lower surface of the wafer).
  • This heating method heats up quickly and can shorten the heating time, but it is expensive and consumes a lot of power.
  • the preheating stage usually does not require immediate heating, allowing the current preheated wafer to be placed on the upper surface.
  • a wafer is heated up slowly and uniformly during the film deposition time. Therefore, how to ensure that the power consumption of the equipment and the cost of the equipment are reduced as much as possible under the condition of uniform temperature rise in the preheating stage is a problem that needs to be continuously explored and improved.
  • the existing technology uses a cooling chamber independent of the preheating chamber and the process chamber for cooling. Therefore, the overall volume of the existing chemical vapor deposition equipment is relatively large. , takes up a lot of space, and because the preheating and cooling chambers are independent, the utilization rate of the chamber is not high, resulting in low equipment efficiency and increased production costs.
  • the object of the present invention is to provide a multi-functional wafer pretreatment chamber and chemical vapor deposition equipment, which is used to solve the problem of rapid heating of the lower surface of the wafer by the heating base in the prior art.
  • the method will lead to irregular warping of the wafer, which will lead to wafer sliding and chip removal failure during the thin film deposition process, and the existing preheating device has large power consumption and volume, and the utilization rate is not high, resulting in low equipment efficiency and Increased production costs and other issues.
  • the present invention provides a multifunctional wafer preprocessing chamber, including: a chamber body, a wafer carrying device, a preheating device, a heat conduction device, a cooling device, a first driving device, a second driving device device and controller; the cavity is provided with a gate; the wafer carrying device is located in the cavity, including a carrier plate and a plurality of support pins, and a plurality of accommodation holes are arranged on the carrier plate, and a plurality of the support pins The pins are arranged one by one in the accommodating holes, and the first driving device is connected with a plurality of the supporting pins, and is used to drive the supporting pins to move up and down in the accommodating holes as required; the heat conducting device is located at Below the preheating device and directly above the wafer to be processed, the heat conduction device includes a heat conduction plate and a heat insulating coating, the size of the heat conduction plate is consistent with the wafer, and the heat conduction plate is distributed with
  • the preheating device includes a lamp panel and more than two heating lamps,
  • the lamp panel includes a panel surface and a shielding part, the heating lamp is fixed on the lower surface of the panel surface, one end of the shielding part is connected to the edge of the panel surface, and the other end extends to the edge of the heat conducting plate.
  • the second driving device is connected with the lamp panel, and is used to drive the rotation of the preheating device
  • the cooling device includes a cooling tube, which is located in the carrier plate, and the cooling device is connected to the cooling source connected;
  • the controller is connected with the first driving device and the second driving device; when the multifunctional wafer preprocessing chamber is in the preheating mode, the first driving device is in the controller Under control, the support pin is driven to rise to support the wafer, the preheating device is activated, and the light emitted by the heating lamp can only reach the surface of the wafer through the heat conduction hole to heat the wafer; when the When the multifunctional wafer preprocessing chamber is in the cooling mode, the first driving device drives the support pins to descend under the control of the controller, the wafer is placed on the carrier plate, and the cooling device starts.
  • the surface of the lamp panel facing the heat conducting plate and/or the surface of the shielding portion adjacent to the heating lamp is provided with a reflective heat-insulating coating.
  • the gate includes a first gate and a second gate
  • the controller is connected to the first gate and the second gate, and when the wafer enters the cavity from the first gate, the The controller controls the start of the preheating device and the lifting of the support pins, and when the wafer enters the cavity from the second gate, the controller controls the start of the cooling device and the lowering of the support pins .
  • a groove is provided in the carrier plate, the side and bottom of the groove are provided with the cooling pipeline, and the wafer to be processed is placed in the groove.
  • the top surface of the support pin is an inclined surface.
  • the top surface of the support pin is in contact with the wafer edges touch.
  • the multi-functional wafer preprocessing chamber further includes a third driving device, which is connected to the carrier plate and electrically connected to the controller, and is used to drive the carrier plate to reciprocate and/or lift .
  • a third driving device which is connected to the carrier plate and electrically connected to the controller, and is used to drive the carrier plate to reciprocate and/or lift .
  • the multifunctional wafer processing chamber further includes a temperature measuring device, which is located in the chamber and is electrically connected to the controller, and the controller is electrically connected to the heating lamp.
  • a temperature measuring device which is located in the chamber and is electrically connected to the controller, and the controller is electrically connected to the heating lamp.
  • the multifunctional wafer preprocessing chamber further includes an auxiliary thermal insulation device and a fourth driving device connected to the auxiliary thermal insulation device, the auxiliary thermal insulation device is located in the cavity, and the first The four driving devices are electrically connected to the controller, and when the multifunctional wafer preprocessing chamber is in the preheating mode, under the control of the controller, the fourth driving device drives the auxiliary heat insulation device to The space between the heat conduction device and the carrier plate is surrounded to prevent heat loss.
  • the present invention also provides a chemical vapor deposition equipment, the chemical vapor deposition equipment includes a chemical vapor deposition chamber and a multifunctional wafer pretreatment chamber as described in any of the above schemes, the chemical vapor deposition chamber and the The multifunctional wafer preprocessing chamber is connected.
  • the multifunctional wafer pretreatment chamber and chemical vapor deposition equipment of the present invention have the following beneficial effects: the improved structural design of the present invention integrates the heating and cooling functions at different positions in the same chamber, improving the efficiency of the equipment.
  • the mutual interference of the two functions can be minimized, such as reducing the heat generated during heating from spreading to the cooling area, which helps to improve wafer heating and cooling efficiency, increase equipment output and reduce equipment power.
  • FIG. 1 shows an exemplary structural diagram of a multifunctional wafer preprocessing chamber provided for the invention.
  • FIG. 2 is a schematic diagram of a partial structure of the heat conducting plate in FIG. 1 .
  • Fig. 3 shows a partial structural schematic diagram of the preheating device provided by the present invention.
  • Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification.
  • the present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
  • the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and the schematic diagram is only an example, which should not limit the protection scope of the present invention.
  • the three-dimensional space dimensions of length, width and depth should be included in actual production.
  • spatial relation terms such as “below”, “below”, “below”, “below”, “above”, “on” etc. may be used herein to describe an element or element shown in the drawings.
  • a layer is referred to as being “between” two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.
  • structures described as having a first feature "on top of" a second feature may include embodiments where the first and second features are formed in direct contact, as well as additional features formed between the first and second features. Embodiments between the second feature such that the first and second features may not be in direct contact.
  • the present invention provides a multifunctional wafer preprocessing chamber, including: a chamber body 11, a wafer carrying device, a preheating device, a heat conduction device, a cooling device, a first driving device, and a second driving device.
  • the cavity 11 is provided with a gate, and the wafer enters and exits the cavity 11 through the gate;
  • the wafer carrying device is located in the cavity 11, including a carrier plate 12 and a plurality of support pins 13,
  • the carrying plate 12 is provided with a plurality of accommodation holes, and the plurality of support pins 13 are arranged in the accommodation holes one by one, and the first driving device is connected with the plurality of support pins 13 for Drive the support pins 13 up and down in the accommodating hole as required;
  • the heat conduction device is located below the preheating device and directly above the wafer 17 to be processed, and the heat conduction device includes a heat conduction plate 14 and a thermal insulation Coating 15, the size of the heat conduction plate 14 is consistent with the wafer 17, a plurality of heat conduction holes 16 are distributed on the heat conduction plate 14 at intervals, the heat conduction holes 16 run through the heat conduction plate 14 up and down, and the heat insulation coating Layer 15 covers the surface of the heat conduction plate 14 except the heat conduction hole 16
  • the second driving device is connected to the lamp panel 18 and is used to drive the preheating device to rotate, preferably reciprocating rotation, so as to avoid the entanglement of electric wires and drive the rotation of the lamp panel 18 through rotation Then drive the rotation of the heating lamp 19 to uniformly heat the wafer 17.
  • the second driving device includes, for example, a rotating shaft 20 and a motor 21 electrically connected to the rotating shaft 20.
  • the center of the rotating shaft 20 can be aligned with the surface of the disk.
  • the center of 181 is on the same central axis, and preferably also on the same vertical line as the center of wafer 17;
  • the cooling device includes a cooling pipe 23 located in the carrier plate 12 (the carrier plate 12 can also be defined as a cooling plate), and the cooling device communicates with a cooling source for cooling the wafer 17 when needed ;
  • the controller is connected to the first driving device and the second driving device;
  • the first driving device drives the support pins 13 to rise to support the wafer 17 under the control of the controller, and the preheating device start, the light emitted by the heating lamp 19 can only reach the surface of the wafer 17 through the heat conduction hole 16 to heat the wafer 17, that is, the heat conduction plate 14 is used to guide the required light to avoid unnecessary Light and heat are dissipated to undesired areas, so heat conduction plates 14 with different heat conduction hole 16 designs can be used according to needs to achieve precise heating of the wafer 17, which helps to improve heating efficiency and uniformity;
  • the first driving device drives the support pin 13 to descend under the control of the controller, and the wafer 17 is placed on the carrier plate 12, The cooling device is activated.
  • the improved structural design of the present invention integrates the heating and cooling functions in different positions in the same cavity, and can minimize the mutual interference of the two functions, such as reducing the heat generated during heating, while improving the functional integration of the equipment Diffusion to the cooling area, so that after the preheating of the previous wafer is completed, the next wafer can be cooled immediately, which helps to improve the efficiency of wafer heating and cooling, improve equipment output and reduce equipment power consumption and manufacturing cost, and helps to improve heating uniformity, reducing problems such as wafer warping, uneven film deposition thickness, wafer deformation, and slippage caused by uneven heating.
  • the preheating and cooling process originally carried out in the process chamber can be placed on the multi-functional wafer
  • the round pretreatment chamber can reduce the residence time of the wafer in the process chamber and help to improve the output of the equipment.
  • the heat conduction plate 14 can be a thermally insulated glass fiber material with a thickness of 2cm-5cm (including the endpoint value), and the heat conduction hole 16 can vertically penetrate the heat conduction plate 14 or tilt at a certain angle.
  • the heat-insulating coating 15 can be, for example, a composite magnesium-aluminum silicate heat-insulating coating with a thickness of, for example, 2-10 mm. It is difficult for light and heat to pass through the area covered with the heat-insulating coating 15 and can only pass through the heat-conducting holes 16. conduction.
  • the distribution of the heat conduction holes 16 can be determined according to the conditions of the wafer to be heated, and the size of the heat conduction holes 16 can also be set according to needs, for example, the diameter of the holes is 0.1mm-0.5mm.
  • the wafer is a bare wafer that is not coated with any film layer on the surface
  • a plurality of the heat conduction holes 16 that are uniform in size and evenly spaced can be set on the heat conduction plate 14; Coated with a film layer, according to the situation of the coated film layer, such as the situation that the metal film plated before has a thick middle and a thin edge, then considering the situation that the metal is heated and heated quickly, a relatively sparse layer can be arranged in the middle of the heat conduction plate 14.
  • the heat conduction holes 16 are relatively densely arranged at the edge. This embodiment does not specifically limit the arrangement of the heat conduction holes 16. What is important is that due to the use of the heat conduction plate 14 with the heat conduction holes 16 and the heat insulating coating 15, more precise heating of the wafer can be achieved. And it can effectively reduce heat loss, especially avoid heat spreading to the cooling area and interfere with the cooling area as far as possible, so as to effectively improve heating and cooling efficiency and reduce power consumption.
  • the heating lamps 19 are evenly distributed on the lower surface of the disc surface 181 , the heating lamps 19 include but not limited to halogen lamps, and different heating lamps 19 can be controlled by the same switch or by different switches.
  • the surface of the lamp panel 18 facing the heat conducting plate 14 and/or the surface of the shielding portion 182 adjacent to the heating lamp 19 is provided with a reflective heat-insulating coating (preferably both surfaces are Coated with a reflective heat-insulating coating), the reflective heat-insulating coating reflects light and does not absorb heat, so as to further avoid heat loss and improve heating efficiency.
  • the cooling medium in the cooling tube 23 can be liquid or gas, or a gas-liquid mixture.
  • phase change materials can also be used for rapid heat dissipation.
  • the gates include a first gate 111 (which can also be defined as a preheating port) and a second gate 112 (which can also be defined as a cooling port), and the controller communicates with the first gate 111 and the second gate
  • the gate 112 is connected, and when the wafer enters the cavity 11 from the first gate 111, the controller controls the start of the preheating device and the lifting of the support pin 13, and when the wafer enters from the first gate 111
  • the controller controls the cooling device to start and the support pin 13 to descend.
  • the multifunctional wafer preprocessing chamber may be connected to a wafer loadport through the first gate 111 , and connected to a process chamber, including but not limited to a chemical vapor deposition chamber, through the second gate 112 . That is, after the wafer to be processed enters the chamber 11 from the wafer loading chamber through the first gate 111, the preheating device is automatically activated, and when the processed wafer enters the chamber 11 from the process chamber through the second gate 112 After that, the cooling device starts automatically, which can further improve the automation of the equipment.
  • a groove is provided in the carrier plate 12, and the cooling pipe 23 is provided on the side and bottom of the groove, and the wafer to be processed is placed in the groove, so that during the cooling process , the wafer can be cooled from the side and bottom of the wafer at the same time, which helps to improve the cooling efficiency, especially helps to quickly cool the wafer edge without edge warping and/or film edge detachment from the wafer surface.
  • the top surface of the support pins 13 is in contact with the edge of the wafer, which can effectively prevent the edge of the support pins 13 from causing damage to the wafer.
  • the wafer is kept as far away from the carrier plate 12 as possible, so as to prevent the heat on the wafer from being directly transferred to the carrier plate 12 .
  • the multifunctional wafer preprocessing chamber further includes a third driving device, which is connected to the carrier plate 12 and electrically connected to the controller, and is used to drive the carrier plate 12 to reciprocate and rotate / or lifting, which helps to further improve heating and cooling efficiency and avoid interference of different functions.
  • a third driving device which is connected to the carrier plate 12 and electrically connected to the controller, and is used to drive the carrier plate 12 to reciprocate and rotate / or lifting, which helps to further improve heating and cooling efficiency and avoid interference of different functions.
  • the multifunctional wafer processing chamber further includes a temperature measuring device (not shown), located in the chamber 11, and electrically connected to the controller, the controller is connected to the heating lamp 19, when the temperature measurement device detects that the temperature of the wafer surface is different, the controller adjusts the power of different heating lamps 19, which helps to further improve the heating uniformity.
  • a temperature measuring device not shown
  • the controller is connected to the heating lamp 19, when the temperature measurement device detects that the temperature of the wafer surface is different, the controller adjusts the power of different heating lamps 19, which helps to further improve the heating uniformity.
  • the multi-functional wafer preprocessing chamber further includes an auxiliary thermal insulation device 22 and a fourth drive device connected to the auxiliary thermal insulation device 22, and the auxiliary thermal insulation device 22 is located in the cavity 11, the fourth driving device is electrically connected to the controller, and when the multifunctional wafer preprocessing chamber is in the preheating mode, under the control of the controller, the fourth driving device drives the
  • the auxiliary heat insulating device 22 surrounds the space between the heat conducting device and the carrier plate 12 to prevent heat loss.
  • the auxiliary heat insulating device 22 can be automatically removed from the top of the carrier plate 12 to avoid interference with the movement of the wafer, and a self-cooling device can be further provided in the auxiliary insulating device.
  • the auxiliary heat insulation device 22 activates the self-cooling function, so as to avoid the residual heat inside the cavity from spreading to other areas in the cavity 11 , especially to the vicinity of the cooling device.
  • the exemplary working mode of the multifunctional wafer preprocessing chamber is as follows, the controller switches the preheating mode and cooling mode according to the state of the wafer entering and exiting:
  • the preheating mode is started.
  • the cooling medium stops flowing, the support pins 13 hold up the wafer, all the heating lamps 19 in the lamp panel 18 light up, the second driving device drives the rotating shaft 20 to rotate back and forth, and at the same time drives the The lamp panel 18 rotates back and forth, and the generated light is evenly and vertically incident on the upper surface of the wafer through the heat conduction hole 16 of the heat conduction plate 14, so as to realize uniform preheating of the wafer;
  • the cooling mode is started.
  • the preheating device is closed and the cooling device is started, that is, the rotating shaft 20 stops rotating, and the The heating lamp 19 is turned off, the support pin 13 is lowered below the upper surface of the cooling plate and the wafer is placed on the upper surface of the cooling plate, and the cooling medium in the cooling pipe 23 circulates to realize the cooling of the wafer. cool down.
  • the present invention also provides a chemical vapor deposition equipment, the chemical vapor deposition equipment includes a chemical vapor deposition chamber and a multifunctional wafer pretreatment chamber as described in any of the above schemes, the chemical vapor deposition chamber and the The multifunctional wafer preprocessing chamber is connected.
  • the multi-functional wafer preprocessing chamber please refer to the foregoing content, and details are not repeated for the purpose of brevity.
  • the chemical vapor deposition equipment provided by the present invention can carry out the preheating and cooling process of the wafer in the multifunctional pretreatment chamber, so that the chemical vapor deposition chamber can be used for the chemical vapor deposition process in a concentrated manner, which helps to improve the
  • the utilization rate of the process chamber helps to improve the output rate of the equipment, and because of the ingenious structural design of the multi-functional wafer pretreatment chamber, it can effectively reduce the power consumption of the equipment, reduce the space occupied by the equipment, and help reduce the production cost .
  • the chemical vapor deposition chamber is single, and in another example, the chemical vapor deposition chamber is more than two, that is, multiple chemical vapor deposition chambers share a multifunctional wafer pretreatment
  • the chamber can give full play to the advantages of the multi-functional wafer pretreatment chamber, which is helpful for further miniaturization of the equipment and reduction of power consumption of the equipment.
  • the present invention provides a multifunctional wafer preprocessing chamber and chemical vapor deposition equipment.
  • the invention integrates the heating and cooling functions in different positions in the same cavity, and through ingenious structural design, it can minimize the mutual interference of the two functions, such as reducing the noise generated during heating, while improving the integration of equipment functions.
  • the heat spreads to the cooling area which helps to improve the efficiency of wafer heating and cooling, improves equipment output, reduces equipment power consumption and manufacturing costs, and helps to improve heating uniformity and reduce wafer damage caused by uneven heating. Edge warping, uneven film deposition thickness, wafer warping, and slippage. . Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial application value.

Abstract

本发明提供一种多功能晶圆预处理腔及化学气相沉积设备。预处理腔包括腔体、晶圆承载装置、预热装置、导热装置、冷却装置、第一驱动装置、第二驱动装置及控制器；晶圆承载装置包括承载盘及若干个支撑销；导热装置位于预热装置下方，且位于晶圆正上方，包括导热盘及隔热涂层，导热盘上间隔分布有多个导热孔；预热装置包括灯盘及两个以上加热灯，灯盘包括盘面部和遮挡部，加热灯固定于盘面部的下表面；冷却装置包括冷却管，位于承载盘内，与冷却源相连通；控制器与第一驱动装置和第二驱动装置相连接；当处于预热模式时，支撑销升起以支撑晶圆，预热装置启动；当处于冷却模式时，支撑销下降，晶圆放置于承载盘上。本发明有助于提高工艺效率。

Description

多功能晶圆预处理腔及化学气相沉积设备 技术领域
本发明涉及半导体制造技术领域，特别是涉及一种多功能晶圆预处理腔及化学气相沉积设备。
背景技术
芯片制备通常需要经过多次的薄膜沉积、光刻胶涂布、曝光显影、刻蚀、离子注入等工艺阶段。这其中，有些工艺阶段需在高于200℃的高温下进行，比如像化学气相沉积工艺的温度可能高达400-500℃。化学气相沉积过程中，晶圆在工艺腔室内，在极短的时间内被升温至400-500℃，而通常晶圆的中心比边缘受热快，因此会造成晶圆的不规则翘边(warpage)，随着沉积过程的持续进行，薄膜厚度逐渐增加，翘边区域因膜厚不同产生重量偏边分布，会造成晶圆滑动，进而造成机械手臂取片故障等问题，因此晶圆在进入反应腔之前进行预热十分重要。
现有的晶圆加热或预热装置多采用通过加热基座对放置于其表面的晶圆进行加热(即加热基座对晶圆的下表面进行加热)的方式。这种加热方式升温较快，能缩短加热时间，但造价昂贵、功耗较高，而实际上，现有的工艺中，预热阶段通常不要求立即升温，容许当前预热的晶圆在上一片晶圆处于薄膜沉积的时间内缓慢均匀的升温。因此，如何确保在预热阶段达到均匀升温的条件下，尽量降低设备功耗、减少设备造价，则是需要不断探索改进的问题。同时，薄膜沉积工艺结束后，还需要进行物理冷却降温，现有技术均是通过独立于预热腔体和工艺腔体的冷却腔体进行冷却，因此现有的化学气相沉积设备整体体积较大，占用空间较多，且因预热和冷却腔体各自独立，腔体利用率不高，导致设备效能低下和生产成本提高。
发明内容
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种多功能晶圆预处理腔及化学气相沉积设备，用于解决现有技术中采取加热基座对晶圆下表面进行快速加热的方式会导致晶圆的不规则翘边，进而在薄膜沉积过程中导致晶圆滑动和取片故障，以及现有的预热装置功耗和体积大，利用率不高，导致设备效能低下和生产成本提高等问题。
为实现上述目的及其他相关目的，本发明提供一种多功能晶圆预处理腔，包括：腔体、晶圆承载装置、预热装置、导热装置、冷却装置、第一驱动装置、第二驱动装置及控制器；所述腔体上设置有闸门；晶圆承载装置位于所述腔体内，包括承载盘及若干个支撑销，所述 承载盘上设置有若干个容纳孔，若干个所述支撑销一一对应设置于所述容纳孔内，所述第一驱动装置与若干个所述支撑销相连接，用于根据需要驱动所述支撑销在所述容纳孔中升降；所述导热装置位于所述预热装置下方，且位于待处理的晶圆正上方，所述导热装置包括导热盘及隔热涂层，所述导热盘的尺寸和晶圆一致，所述导热盘上间隔分布有多个导热孔，所述导热孔上下贯穿所述导热盘，所述隔热涂层覆盖所述导热盘除所述导热孔外的表面；所述预热装置包括灯盘及两个以上加热灯，所述灯盘包括盘面部和遮挡部，所述加热灯固定于所述盘面部的下表面，所述遮挡部一端与所述盘面部的边缘相连接，另一端延伸至与所述导热盘的边缘相接触，所述第二驱动装置与所述灯盘相连接，用于驱动所述预热装置旋转；所述冷却装置包括冷却管，位于所述承载盘内，所述冷却装置与冷却源相连通；所述控制器与所述第一驱动装置和第二驱动装置相连接；当所述多功能晶圆预处理腔处于预热模式时，所述第一驱动装置在所述控制器的控制下，驱动所述支撑销升起以支撑晶圆，所述预热装置启动，所述加热灯发出的光仅能通过所述导热孔到达晶圆表面以对晶圆进行加热；当所述多功能晶圆预处理腔处于冷却模式时，所述第一驱动装置在所述控制器的控制下，驱动所述支撑销下降，晶圆放置于所述承载盘上，所述冷却装置启动。
可选地，所述灯盘朝向所述导热盘的表面和/或所述遮挡部与所述加热灯相邻的表面设置有反射隔热涂层。
可选地，所述闸门包括第一闸门和第二闸门，所述控制器与所述第一闸门和第二闸门相连接，当晶圆自所述第一闸门进入所述腔体内时，所述控制器控制所述预热装置启动和所述支撑销升起，当晶圆自所述第二闸门进入所述腔体内时，所述控制器控制所述冷却装置启动和所述支撑销下降。
可选地，所述承载盘内设置有凹槽，所述凹槽的侧面和底面设置有所述冷却管路，待处理的晶圆放置于所述凹槽内。
可选地，所述支撑销为两个以上，所述支撑销的顶面为倾斜表面，当所述多功能晶圆预处理腔处于预热模式时，所述支撑销的顶面与晶圆的边缘相接触。
可选地，所述多功能晶圆预处理腔还包括第三驱动装置，与所述承载盘相连接，且与所述控制器电连接，用于驱动所述承载盘往复旋转和/或升降。
可选地，所述多功能晶圆处理腔还包括测温装置，位于所述腔体内，且与所述控制器电连接，所述控制器与所述加热灯电连接，当所述测温装置检测到晶圆表面的温度不同时，所述控制器对不同的所述加热灯的功率进行调节。
可选地，所述多功能晶圆预处理腔还包括辅助隔热装置及与所述辅助隔热装置相连接的 第四驱动装置，所述辅助隔热装置位于所述腔体内，所述第四驱动装置与所述控制器电连接，当所述多功能晶圆预处理腔处于预热模式时，在所述控制器的控制下，所述第四驱动装置驱动所述辅助隔热装置将所述导热装置和所述承载盘之间的空间包围，以防止热量散失。
本发明还提供一种化学气相沉积设备，所述化学气相沉积设备包括化学气相沉积腔室及如上述任一方案中所述的多功能晶圆预处理腔，所述化学气相沉积腔室与所述多功能晶圆预处理腔相连接。
可选地，所述化学气相沉积腔室为两个以上。
如上所述，本发明的多功能晶圆预处理腔及化学气相沉积设备，具有以下有益效果：本发明经改善的结构设计，将加热和冷却功能集合在同一腔体内的不同位置，在提高设备功能集成度的情况下，可以最大程度减少两种功能的相互干扰，比如减少加热时产生的热量扩散至冷却区域，有助于提高晶圆加热和冷却效率，提高设备产出率和降低设备功耗及产品制造成本，且有助于提高加热均匀性，减少因加热不均带来的晶圆翘边、薄膜沉积厚度不均、晶圆变形和滑片等问题。
附图说明
图1显示为发明提供的多功能晶圆预处理腔的例示性结构示意图。
图2显示为图1中的导热盘的局部结构示意图。
图3显示为本发明提供的预热装置的局部结构示意图。
元件标号说明
11-腔体；111-第一闸门；112-第二闸门；12-承载盘；13-支撑销；14-导热盘；15-隔热涂层；16-导热孔；17-晶圆；18-灯盘；181-盘面部；182-遮挡部；19-加热灯；20-旋转轴；21-电机；22-辅助隔热装置；23-冷却管。
具体实施方式
以下通过特定的具体实例说明本发明的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本发明的精神下进行各种修饰或改变。如在详述本发明实施例时，为便于说明，表示器件结构的剖面图会不依一般比例作局部放大，而且所述示意图只是示例，其在此不应限制本发明保护的范围。此外，在实际制作中应包含长度、宽度及深度的三维空间尺寸。
为了方便描述，此处可能使用诸如“之下”、“下方”、“低于”、“下面”、“上方”、 “上”等的空间关系词语来描述附图中所示的一个元件或特征与其他元件或特征的关系。将理解到，这些空间关系词语意图包含使用中或操作中的器件的、除了附图中描绘的方向之外的其他方向。此外，当一层被称为在两层“之间”时，它可以是所述两层之间仅有的层，或者也可以存在一个或多个介于其间的层。
在本申请的上下文中，所描述的第一特征在第二特征“之上”的结构可以包括第一和第二特征形成为直接接触的实施例，也可以包括另外的特征形成在第一和第二特征之间的实施例，这样第一和第二特征可能不是直接接触。
需要说明的是,本实施例中所提供的图示仅以示意方式说明本发明的基本构想，遂图式中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制，其实际实施时各组件的型态、数量及比例可为一种随意的改变，且其组件布局型态也可能更为复杂。为使图示尽量简洁，各附图中并未对所有的结构全部标示。
如图1-3所示，本发明提供一种多功能晶圆预处理腔，包括：腔体11、晶圆承载装置、预热装置、导热装置、冷却装置、第一驱动装置、第二驱动装置及控制器；所述腔体11上设置有闸门，晶圆自该闸门进出所述腔体11；晶圆承载装置位于所述腔体11内，包括承载盘12及若干个支撑销13，所述承载盘12上设置有若干个容纳孔，若干个所述支撑销13一一对应设置于所述容纳孔内，所述第一驱动装置与若干个所述支撑销13相连接，用于根据需要驱动所述支撑销13在所述容纳孔中升降；所述导热装置位于所述预热装置下方，且位于待处理的晶圆17正上方，所述导热装置包括导热盘14及隔热涂层15，所述导热盘14的尺寸和晶圆17一致，所述导热盘14上间隔分布有多个导热孔16，所述导热孔16上下贯穿所述导热盘14，所述隔热涂层15覆盖所述导热盘14除所述导热孔16外的表面(优选同时覆盖于上表面和下表面)；所述预热装置包括灯盘18及两个以上加热灯19，所述灯盘18包括盘面部181和遮挡部182，所述加热灯19固定于所述盘面部181的下表面，所述遮挡部182一端与所述盘面部181的边缘相连接，另一端延伸至与所述导热盘14的边缘相接触，所述遮挡部182恰好遮挡住最边缘的所述加热灯19(灯泡或灯管)射向所述导热盘14的非受光加热区域，防止光和热量的散失，确保导热盘14接收到充足的光强；
所述第二驱动装置与所述灯盘18相连接，用于驱动所述预热装置旋转，且较优地为往复旋转，以避免电气线的缠绕，通过旋转带动所述灯盘18的旋转进而带动所述加热灯19的旋转，以对晶圆17进行均匀加热，所述第二驱动装置例如包括旋转轴20和与旋转轴20电连接的电机21，旋转轴20的中心可与盘面部181的中心在同一圆心轴上，且较优地还与晶圆17的圆心在同一垂线上；
所述冷却装置包括冷却管23，位于所述承载盘12(也可将承载盘12定义为冷却盘)内，所述冷却装置与冷却源相连通，用于在需要时对晶圆17进行冷却；
所述控制器与所述第一驱动装置和第二驱动装置相连接；
当所述多功能晶圆预处理腔处于预热模式时，所述第一驱动装置在所述控制器的控制下，驱动所述支撑销13升起以支撑晶圆17，所述预热装置启动，所述加热灯19发出的光仅能通过所述导热孔16到达晶圆17表面以对晶圆17进行加热，即利用所述导热盘14对所需的光进行引导，避免不必要的光热散发至不希望的区域，故而可以根据需要采用具有不同的导热孔16设计的导热盘14，以实现对晶圆17的精准加热，有助于提高加热效率和均匀性；
当所述多功能晶圆预处理腔处于冷却模式时，所述第一驱动装置在所述控制器的控制下，驱动所述支撑销13下降，晶圆17放置于所述承载盘12上，所述冷却装置启动。
本发明经改善的结构设计，将加热和冷却功能集合在同一腔体内的不同位置，在提高设备功能集成度的情况下，可以最大程度减少两种功能的相互干扰，比如减少加热时产生的热量扩散至冷却区域，因而前一晶圆的预热完成后，即可立刻进行下一晶圆的冷却，有助于提高晶圆加热和冷却效率，提高设备产出率和降低设备功耗及制造成本，且有助于提高加热均匀性，减少因加热不均带来的晶圆翘边、薄膜沉积厚度不均、晶圆变形和滑片等问题。将本发明提供的多功能晶圆预处理腔和工艺腔体(包括但不限于化学气相沉积腔)联合使用，可以将原本在工艺腔室进行的预热和冷却过程放置到所述多功能晶圆预处理腔内进行，可以减少晶圆在工艺腔室内的停留时间，有助于提高设备产出率。
所述导热盘14的材质和厚度等参数可以根据需要设置，例如导热盘14可以为隔热的玻璃纤维材质，厚度为2cm-5cm(包括端点值)，导热孔16可以垂直贯穿所述导热盘14或倾斜一定角度。所述隔热涂层15例如可以为复合硅酸镁铝隔热涂料，厚度例如为2-10mm，光热很难通过覆盖有隔热涂层15的区域而只能通过所述导热孔16进行传导。
所述导热孔16的分布情况可以根据待加热晶圆的情况而定，导热孔16的大小也可以根据需要设置，例如孔径为0.1mm-0.5mm。例如当所述晶圆为表面未镀有任何膜层的裸晶圆时，可在导热盘14上设置大小尺寸一致且均匀间隔分布的多个所述导热孔16；若所述晶圆表面已经镀有膜层，则根据所镀膜层的情况，比如之前镀的金属薄膜存在中间厚边缘薄的情况，则考虑到金属受热升温快的情况，可以在导热盘14的中间设置相对较稀疏的所述导热孔16而在边缘设置相对密集的所述导热孔16。本实施例对导热孔16的设置情况不做具体限制，重要的是，由于使用具有所述导热孔16和隔热涂层15的所述导热盘14，可以对晶圆实现更精准的加热，且可以有效减少热量散失，尤其是尽量避免热量扩散至冷却区域而对冷却区域 进行干扰，从而可以有效提高加热和冷却效率，降低功耗。
在一示例中，所述加热灯19在所述盘面部181下表面均匀分布，所述加热灯19包括但不限于卤素灯，不同的加热灯19可以通过同一开关控制或通过不同的开关控制。
在一示例中，所述灯盘18朝向所述导热盘14的表面和/或所述遮挡部182与所述加热灯19相邻的表面设置有反射隔热涂层(优选这两个表面均涂布有反射隔热涂层)，所述反射隔热涂层反光不吸热，以进一步避免热量散失，提高加热效率。
所述冷却管23内的冷却介质可以为液体或气体，还可以为气液混合物，在较优的示例中，还可以采用相变材料以进行快速散热。
在一示例中，所述闸门包括第一闸门111(也可以定义为预热口)和第二闸门112(也可以定义为冷却口)，所述控制器与所述第一闸门111和第二闸门112相连接，当晶圆自所述第一闸门111进入所述腔体11内时，所述控制器控制所述预热装置启动和所述支撑销13升起，当晶圆自所述第二闸门112进入所述腔体11内时，所述控制器控制所述冷却装置启动和所述支撑销13下降。所述多功能晶圆预处理腔可以经所述第一闸门111与晶圆装载腔(loadport)相连接，经所述第二闸门112与工艺腔，包括但不限于化学气相沉积腔相连接。即待处理的晶圆自晶圆装载腔经所述第一闸门111进入腔体11后，预热装置自动启动，而当完成工艺处理的晶圆自工艺腔经第二闸门112进入腔体11后，冷却装置自动启动，可以进一步提高设备自动化程度。
在一示例中，所述承载盘12内设置有凹槽，所述凹槽的侧面和底面设置有所述冷却管23路，待处理的晶圆放置于所述凹槽内，故而冷却过程中，可以同时自晶圆的侧面和底部对晶圆进行冷却，有助于提高冷却效率，尤其是有助于使晶圆边缘快速冷却而避免边缘翘曲和/或薄膜边缘自晶圆表面脱离。
在一示例中，所述支撑销13为两个以上，通常为3个以上，3个以上支撑销13在晶圆边缘均匀间隔分，所述支撑销13的顶面为倾斜表面，当所述多功能晶圆预处理腔处于预热模式时，所述支撑销13的顶面与晶圆的边缘相接触，可以有效避免支撑销13的边缘对晶圆造成损伤。利用支撑销13的支撑，使晶圆尽量远离承载盘12，避免晶圆上的热量直接传导到所述承载盘12上。
在一示例中，所述多功能晶圆预处理腔还包括第三驱动装置，与所述承载盘12相连接，且与所述控制器电连接，用于驱动所述承载盘12往复旋转和/或升降，有助于进一步提高加热和冷却效率，避免不同功能的干扰。
在一示例中，所述多功能晶圆处理腔还包括测温装置(未示出)，位于所述腔体11内， 且与所述控制器电连接，所述控制器与所述加热灯19电连接，当所述测温装置检测到晶圆表面的温度不同时，所述控制器对不同的所述加热灯19的功率进行调节，有助于进一步提高加热均匀性。
在一示例中，所述多功能晶圆预处理腔还包括辅助隔热装置22及与所述辅助隔热装置22相连接的第四驱动装置，所述辅助隔热装置22位于所述腔体11内，所述第四驱动装置与所述控制器电连接，当所述多功能晶圆预处理腔处于预热模式时，在所述控制器的控制下，所述第四驱动装置驱动所述辅助隔热装置22将所述导热装置和所述承载盘12之间的空间包围，以防止热量散失。当加热功能结束后，所述辅助隔热装置22可自动自所述承载盘12上方移除，避免对晶圆的移动造成干扰，且所述辅助隔离装置内还可以进一步设置自冷却装置，当预热过程结束后，所述辅助隔热装置22启动自冷却功能，以尽量避免其内部残余的热量向腔体11内的其他区域，尤其是向冷却装置附近扩散。
本实施例提供的多功能晶圆预处理腔的例示性工作方式如下，控制器根据晶圆进出状态的不同切换预热模式和冷却模式：
当晶圆从所述第一闸门111，即从预热口进入所述腔体11时，启动预热模式，预热模式下冷却装置关闭、预热装置启动，即所述冷却管23内的冷却介质停止流动，所述支撑销13将晶圆托起，所述灯盘18内的所述加热灯19全部亮起，所述第二驱动装置驱动所述旋转轴20往复旋转，同时带动所述灯盘18往复旋转，产生的灯光经所述导热盘14的导热孔16均匀且垂直的入射到所述晶圆的上表面，实现对晶圆的均匀预热；
当晶圆从所述第二闸门112，即从冷却口进入所述腔体11时，启动冷却模式，冷却模式下预热装置关闭、冷却装置启动，即所述旋转轴20停止转动，所述加热灯19关闭，所述支撑销13下降到所述冷却盘的上表面以下并将晶圆放置在所述冷却盘的上表面，所述冷却管23内的冷却介质循环流动实现对晶圆的冷却。
本发明还提供一种化学气相沉积设备，所述化学气相沉积设备包括化学气相沉积腔室及如上述任一方案中所述的多功能晶圆预处理腔，所述化学气相沉积腔室与所述多功能晶圆预处理腔相连接。对所述多功能晶圆预处理腔的详细介绍还请参考前述内容，出于简洁的目的不赘述。本发明提供的化学气相沉积设备，可以将晶圆的预热和冷却过程放在所述多功能预处理腔内进行，使得化学气相沉积腔室能集中用于化学气相沉积工艺，有助于提高工艺腔室的利用率，从而有助于提高设备产出率，且因多功能晶圆预处理腔的巧妙的结构设计，可以有效降低设备功耗，减少设备占用空间，有助于降低生产成本。
在一示例中，所述化学气相沉积腔室为单个，而在另一示例中，所述化学气相沉积腔室 为两个以上，即多个化学气相沉积腔室共用一个多功能晶圆预处理腔，可以充分发挥多功能晶圆预处理腔的优势，有助于设备的进一步小型化和降低设备功耗。
综上所述，本发明提供一种多功能晶圆预处理腔及化学气相沉积设备。本发明将加热和冷却功能集合在同一腔体内的不同位置，并经巧妙的结构设计，在提高设备功能集成度的情况下，可以最大程度减少两种功能的相互干扰，比如减少加热时产生的热量扩散至冷却区域，有助于提高晶圆加热和冷却效率，提高设备产出率和降低设备功耗及制造成本，且有助于提高加热均匀性，减少因加热不均带来的晶圆翘边、薄膜沉积厚度不均、晶圆变形和滑片等问题。。所以，本发明有效克服了现有技术中的种种缺点而具高度产业利用价值。
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。

Claims (10)

  1. 一种多功能晶圆预处理腔，其特征在于，包括：腔体、晶圆承载装置、预热装置、导热装置、冷却装置、第一驱动装置、第二驱动装置及控制器；所述腔体上设置有闸门；晶圆承载装置位于所述腔体内，包括承载盘及若干个支撑销，所述承载盘上设置有若干个容纳孔，若干个所述支撑销一一对应设置于所述容纳孔内，所述第一驱动装置与若干个所述支撑销相连接；所述导热装置位于所述预热装置下方，且位于待处理的晶圆正上方，所述导热装置包括导热盘及隔热涂层，所述导热盘的尺寸和晶圆一致，所述导热盘上间隔分布有多个导热孔，所述导热孔上下贯穿所述导热盘，所述隔热涂层覆盖所述导热盘除所述导热孔外的表面；所述预热装置包括灯盘及两个以上加热灯，所述灯盘包括盘面部和遮挡部，所述加热灯固定于所述盘面部的下表面，所述遮挡部一端与所述盘面部的边缘相连接，另一端延伸至与所述导热盘的边缘相接触，所述第二驱动装置与所述灯盘相连接，用于驱动所述预热装置旋转；所述冷却装置包括冷却管，位于所述承载盘内，所述冷却装置与冷却源相连通；所述控制器与所述第一驱动装置和第二驱动装置相连接；当所述多功能晶圆预处理腔处于预热模式时，所述第一驱动装置在所述控制器的控制下，驱动所述支撑销升起以支撑晶圆，所述预热装置启动，所述加热灯发出的光仅能通过所述导热孔到达晶圆表面以对晶圆进行加热；当所述多功能晶圆预处理腔处于冷却模式时，所述第一驱动装置在所述控制器的控制下，驱动所述支撑销下降，晶圆放置于所述承载盘上，所述冷却装置启动。
  2. 根据权利要求1所述的多功能晶圆预处理腔，其特征在于，所述灯盘朝向所述导热盘的表面和/或所述遮挡部与所述加热灯相邻的表面设置有反射隔热涂层。
  3. 根据权利要求1所述的多功能晶圆预处理腔，其特征在于，所述闸门包括第一闸门和第二闸门，所述控制器与所述第一闸门和第二闸门相连接，当晶圆自所述第一闸门进入所述腔体内时，所述控制器控制所述预热装置启动和所述支撑销升起，当晶圆自所述第二闸门进入所述腔体内时，所述控制器控制所述冷却装置启动和所述支撑销下降。
  4. 根据权利要求1所述的多功能晶圆预处理腔，其特征在于，所述承载盘内设置有凹槽，所述凹槽的侧面和底面设置有所述冷却管路，待处理的晶圆放置于所述凹槽内。
  5. 根据权利要求1所述的多功能晶圆预处理腔，其特征在于，所述支撑销为两个以上，所述支撑销的顶面为倾斜表面，当所述多功能晶圆预处理腔处于预热模式时，所述支撑销的顶面与晶圆的边缘相接触。
  6. 根据权利要求1所述的多功能晶圆预处理腔，其特征在于，所述多功能晶圆预处理腔还包括第三驱动装置，与所述承载盘相连接，且与所述控制器电连接，用于驱动所述承载 盘往复旋转和/或升降。
  7. 根据权利要求1所述的多功能晶圆预处理腔，其特征在于，所述多功能晶圆处理腔还包括测温装置，位于所述腔体内，且与所述控制器电连接，所述控制器与所述加热灯电连接，当所述测温装置检测到晶圆表面的温度不同时，所述控制器对不同的所述加热灯的功率进行调节。
  8. 根据权利要求1所述的多功能晶圆预处理腔，其特征在于，所述多功能晶圆预处理腔还包括辅助隔热装置及与所述辅助隔热装置相连接的第四驱动装置，所述辅助隔热装置位于所述腔体内，所述第四驱动装置与所述控制器电连接，当所述多功能晶圆预处理腔处于预热模式时，在所述控制器的控制下，所述第四驱动装置驱动所述辅助隔热装置将所述导热装置和所述承载盘之间的空间包围，以防止热量散失。
  9. 一种化学气相沉积设备，其特征在于，所述化学气相沉积设备包括化学气相沉积腔室及权利要求1-8任一项所述的多功能晶圆预处理腔，所述化学气相沉积腔室与所述多功能晶圆预处理腔相连接。
  10. 根据权利要求9所述的化学气相沉积设备，其特征在于，所述化学气相沉积腔室为两个以上。
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