JP6921964B2 - 脱気チャンバおよび半導体処理装置 - Google Patents
脱気チャンバおよび半導体処理装置 Download PDFInfo
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- 238000007872 degassing Methods 0.000 title claims description 48
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims description 134
- 238000010438 heat treatment Methods 0.000 claims description 25
- 229910001220 stainless steel Inorganic materials 0.000 claims description 6
- 239000010935 stainless steel Substances 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 11
- 230000003028 elevating effect Effects 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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Description
本開示は、半導体の製造分野に関し、具体的には、脱気チャンバおよび半導体処理装置に関する。
物理気相蒸着(PVD)技術は、半導体の製造分野に広く適用されている。PVDプロセスにおいて、通常、後続の工程に可能な限り清潔な基板を提供するために、基板によって大気から吸収された水蒸気などの不純物を除去し、基板の表面を洗浄するための脱気工程を行う必要がある。例えば、図1に示された銅配線を形成するためのPVDプロセスは、このような脱気工程を含む。
本開示は、従来技術に存在する上記の問題に鑑みて、脱気チャンバおよび半導体処理装置を提供する。この脱気チャンバによれば、基板カセット内の基板が基板搬送口の上方領域または下方領域にあっても光源によって加熱されるため、基板の脱気工程およびピック&プレース工程中に基板の処理温度を均一に維持することができる。
好ましくは、第1反射板および第2反射板は、ステンレス鋼から作られる。
本開示は、以下の有利な効果を有する。本開示によって提供された脱気チャンバは、基板搬送口を境界にして区画された第1チャンバおよび第2チャンバに第1光源および第2光源をそれぞれ設けることによって、基板カセット内の基板が基板搬送口の上方領域または下方領域にあっても光源によって加熱されるため、基板の脱気工程およびピック&プレース工程中に基板の処理温度を均一に維持することができ、基板の脱気工程の品質を向上させると共に、後続工程により清潔な基板を提供することができる。
当業者が本開示の技術的解決策をよりよく理解するために、以下、添付の図面および特定の実施形態を参照して、本開示に係る脱気チャンバおよび半導体処理装置をより詳細に説明する。
図3に示すように、本実施形態は、チャンバ1と基板カセット2とを含む脱気チャンバを提供する。チャンバ1の側壁には、基板搬送口11が設けられる。基板搬送口11は、1つ以上の基板をチャンバ1に搬入するまたはチャンバ1から搬出するための通路として構成される。基板カセット2は、垂直方向に沿ってチャンバ1内で移動可能である。脱気チャンバは、チャンバ1内に配置された加熱アセンブリ3をさらに含む。加熱アセンブリ3は、第1光源31と第2光源32とを含む。チャンバ1は、基板搬送口11を境界にして、第1チャンバ12と第2チャンバ13とに区画される。第1光源31は、第1チャンバ12に配置され、第2光源32は、第2チャンバ13に配置される。第1光源31および第2光源32は、基板カセット2内の基板を加熱するように構成されている。これによって、基板カセット2内の基板が基板搬送口11の上方領域または下方領域にあっても光源によって加熱されるため、基板の脱気工程およびピック&プレース工程中に基板の処理温度を均一に維持することができ、基板の脱気工程の品質を向上させると共に、後続工程により清潔な基板を提供することができる。
本実施形態は、第1実施形態の脱気チャンバを含む半導体処理装置を提供する。
Claims (9)
- 脱気チャンバであって、
チャンバと基板カセットとを含み、
前記チャンバの側壁には、基板搬送口が設けられ、
前記基板搬送口は、1つ以上の基板を前記チャンバに搬入するまたは前記チャンバから搬出するための通路として構成され、
前記基板カセットは、垂直方向に沿って前記チャンバ内で移動可能であり、
前記脱気チャンバは、前記チャンバ内に配置された加熱アセンブリをさらに含み、
前記加熱アセンブリは、第1光源と第2光源とを含み、
前記チャンバは、前記基板搬送口を境界にして、第1チャンバと第2チャンバとに区画され、
前記第1光源は、前記第1チャンバに配置され、前記第2光源は、前記第2チャンバに配置され、
前記第1光源と前記第2光源とは、前記基板カセット内の前記基板を加熱するように構成されており、
前記第1光源は、前記第1チャンバの周方向に沿って前記第1チャンバを取り囲むように、前記第1チャンバの側壁の内側に配置され、
前記第2光源は、前記第2チャンバの周方向に沿って前記第2チャンバを取り囲むように、前記第2チャンバの側壁の内側に配置され、
前記基板カセットは、前記第1光源および前記第2光源によって囲まれた空間内で移動可能であり、
前記加熱アセンブリは、第1反射筒と第2反射筒とをさらに含み、
前記第1反射筒は、前記第1チャンバと前記第1光源との間に配置され、
前記第2反射筒は、前記第2チャンバと前記第2光源との間に配置され、
前記第1反射筒と前記第2反射筒とは、その上に照射された光を前記基板カセット内の前記基板に向かって反射するように構成されており、
前記第1反射筒と前記第2反射筒とを相互接続することによって、一体構造を形成し、前記一体構造の前記基板搬送口に対応する位置に第1開口を設け、前記基板が前記第1開口を通過可能である、脱気チャンバ。 - 前記第1光源は、複数の第1線光源を含み、
前記第1線光源の各々の長さの方向は、前記基板カセットの移動方向と平行であり、
前記複数の第1線光源は、互いに平行であり且つ前記チャンバの周方向に沿って環状に配置され、
前記第2光源は、複数の第2線光源を含み、
前記第2線光源の各々の長さの方向は、前記基板カセットの移動方向と平行であり、
前記複数の第2線光源は、互いに平行であり且つ前記チャンバの周方向に沿って環状に配置されている、請求項1に記載の脱気チャンバ。 - 前記複数の第1線光源のうち、隣接する任意の2つは、等間隔に配置され、
前記複数の第2線光源のうち、隣接する任意の2つは、等間隔に配置されている、請求項2に記載の脱気チャンバ。 - 前記加熱アセンブリは、第1反射板と第2反射板とをさらに含み、
前記第1反射板は、前記基板搬送口の遠位側の前記第1反射筒の端部を覆っており、
前記第2反射板は、前記基板搬送口の遠位側の前記第2反射筒の端部を覆っており、
前記第1反射板と前記第2反射板とは、その上に照射された光を前記基板カセットに向かって反射するように構成されている、請求項1に記載の脱気チャンバ。 - 前記第1反射筒および前記第2反射筒の内壁は、その上に照射された光を拡散反射および/または鏡面反射可能である、請求項1に記載の脱気チャンバ。
- 前記第1反射筒の内側に面する前記第1反射板の内壁と前記第2反射筒の内側に面する前記第2反射板の内壁とは、その上に照射された光を拡散反射および/または鏡面反射可能である、請求項4に記載の脱気チャンバ。
- 前記第1反射筒および前記第2反射筒は、ステンレス鋼から作られる、請求項1に記載の脱気チャンバ。
- 前記第1反射板および前記第2反射板は、ステンレス鋼から作られる、請求項4に記載の脱気チャンバ。
- 請求項1〜8のいずれか1項に記載の脱気チャンバを備える半導体処理装置。
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CN201610854013.4A CN107871681B (zh) | 2016-09-27 | 2016-09-27 | 一种去气腔室和半导体处理装置 |
CN201610854013.4 | 2016-09-27 | ||
PCT/CN2017/073057 WO2018058877A1 (zh) | 2016-09-27 | 2017-02-07 | 去气腔室和半导体处理装置 |
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JP (1) | JP6921964B2 (ja) |
KR (2) | KR102242289B1 (ja) |
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JP5468895B2 (ja) * | 2009-12-25 | 2014-04-09 | キヤノンアネルバ株式会社 | 加熱装置及び基板処理装置 |
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KR20150110206A (ko) * | 2014-03-24 | 2015-10-02 | 주식회사 테라세미콘 | 열처리 장치 |
CN105441899B (zh) | 2014-07-15 | 2018-11-06 | 北京北方华创微电子装备有限公司 | 一种加热腔室及半导体加工设备 |
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CN105789084B (zh) * | 2014-12-17 | 2019-04-23 | 北京北方华创微电子装备有限公司 | 加热腔室以及半导体加工设备 |
CN106282914B (zh) * | 2015-05-15 | 2019-11-29 | 北京北方华创微电子装备有限公司 | 加热腔室以及半导体加工设备 |
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