WO2023110660A1 - Thick film-forming composition and method for manufacturing cured film using the same - Google Patents

Thick film-forming composition and method for manufacturing cured film using the same Download PDF

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Publication number
WO2023110660A1
WO2023110660A1 PCT/EP2022/085122 EP2022085122W WO2023110660A1 WO 2023110660 A1 WO2023110660 A1 WO 2023110660A1 EP 2022085122 W EP2022085122 W EP 2022085122W WO 2023110660 A1 WO2023110660 A1 WO 2023110660A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
composition
manufacturing
mass
hydrocarbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2022/085122
Other languages
English (en)
French (fr)
Inventor
Yoshio Nojima
Takashi Sekito
Hiroshi Hitokawa
Takanori Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
Merck Patent GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent GmbH filed Critical Merck Patent GmbH
Priority to EP22834600.3A priority Critical patent/EP4449200A1/en
Priority to CN202280082281.2A priority patent/CN118401896A/zh
Priority to KR1020247023530A priority patent/KR20240121308A/ko
Priority to JP2024535338A priority patent/JP2024546259A/ja
Publication of WO2023110660A1 publication Critical patent/WO2023110660A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D165/00—Coating compositions based on macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Coating compositions based on derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

Definitions

  • the method for manufacturing a resist pattern according to the present invention comprises the following processes: manufacturing a resist film by the above-mentioned method; (5) performing the exposure to the resist film; and (6) developing the resist film.
  • the method for manufacturing a processed substrate according to the present invention comprises the following processes: manufacturing a resist pattern by the above-mentioned method; and (7) processing the underlayer of the resist pattern using the resist pattern as a mask.
  • the method for manufacturing a device according to the present invention comprises the above-mentioned method. EFFECTS OF THE INVENTION [0015] Using the method for manufacturing a cured film of the present invention, it is possible to desire one or more of the following effects.
  • the alkyl can be linear, branched or cyclic.
  • R 11 is preferably C 1-10 alkyl or C 1-10 alkylamino (more preferably C 1-3 linear alkyl, C 1-3 branched alkyl, cyclopentyl, cyclohexyl or dimethylamino).
  • R 12 is I, Br or CN (preferably I or Br; more preferably I).
  • p 11 is a number of 0 to 5.
  • the component (A) can have only one each of the unit (A1) of two types as a configuration.
  • Examples of the component (A) having the formula (A1-3) include the following.
  • the formula (A1-4) is as follows. where, y is 0 to 2 (preferably 0.5 to 1.5; more preferably 0 or 1).
  • the formula (A1-4) is preferably the formula (Q-1a), (Q- 1b), (Q-1c) or (Q-1d).
  • the component (A) is a polymer (hereinafter, sometimes referred to as the polymer Q) comprising units selected from the group consisting of formulae (Q-1a), (Q-1b), (Q-1c) and (Q-1d).
  • the solvent (B) can contain a solvent other than the organic solvent (B1) and the organic solvent (B2), for example, water. It is also a preferable embodiment that the solvent (B) substantially contain no water in relation to other layers and films.
  • the amount of water in the entire solvent (B) is preferably 0.1 mass % or less (more preferably 0.01 mass % or less; further preferably 0.001 mass % or less). It is also a preferable embodiment that the solvent (B) contains no water (0.000 mass %).
  • the content of the solvent (B) is preferably 50 to 97 mass % (more preferably 60 to 90 mass %; further preferably 65 to 80 mass %) based on the composition.
  • the content of the component (G) is preferably 0 to 20 mass % (more preferably 0 to 2 mass %; further preferably 0.01 to 1 mass %) based on the total content of the component (A) and the component (E).
  • Additive (H) The composition according to the present invention can further comprise an additive (H) other than the above-mentioned components.
  • the additive (H) is preferably selected from the group consisting of acids, bases, radical generators, photopolymerization initiators, and substrate adhesion enhancers.

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Materials For Photolithography (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Insulating Materials (AREA)
  • Paints Or Removers (AREA)
  • Inorganic Insulating Materials (AREA)
PCT/EP2022/085122 2021-12-13 2022-12-09 Thick film-forming composition and method for manufacturing cured film using the same Ceased WO2023110660A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP22834600.3A EP4449200A1 (en) 2021-12-13 2022-12-09 Thick film-forming composition and method for manufacturing cured film using the same
CN202280082281.2A CN118401896A (zh) 2021-12-13 2022-12-09 厚膜形成用组合物及使用该组合物制造固化膜的方法
KR1020247023530A KR20240121308A (ko) 2021-12-13 2022-12-09 후막-형성 조성물 및 이를 사용한 경화막의 제조 방법
JP2024535338A JP2024546259A (ja) 2021-12-13 2022-12-09 厚膜形成組成物、およびそれを用いた硬化膜の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202163265315P 2021-12-13 2021-12-13
US63/265,315 2021-12-13

Publications (1)

Publication Number Publication Date
WO2023110660A1 true WO2023110660A1 (en) 2023-06-22

Family

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PCT/EP2022/085122 Ceased WO2023110660A1 (en) 2021-12-13 2022-12-09 Thick film-forming composition and method for manufacturing cured film using the same

Country Status (7)

Country Link
US (1) US20240337945A1 (https=)
EP (1) EP4449200A1 (https=)
JP (1) JP2024546259A (https=)
KR (1) KR20240121308A (https=)
CN (1) CN118401896A (https=)
TW (1) TW202336062A (https=)
WO (1) WO2023110660A1 (https=)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3474054A (en) 1966-09-13 1969-10-21 Permalac Corp The Surface coating compositions containing pyridine salts or aromatic sulfonic acids
US4200729A (en) 1978-05-22 1980-04-29 King Industries, Inc Curing amino resins with aromatic sulfonic acid oxa-azacyclopentane adducts
US4251665A (en) 1978-05-22 1981-02-17 King Industries, Inc. Aromatic sulfonic acid oxa-azacyclopentane adducts
US5187019A (en) 1991-09-06 1993-02-16 King Industries, Inc. Latent catalysts
JP2014219559A (ja) 2013-05-08 2014-11-20 信越化学工業株式会社 レジスト下層膜形成方法及びパターン形成方法
US20170115572A1 (en) * 2015-10-23 2017-04-27 Samsung Sdi Co., Ltd. Method of producing layer structure, and method of forming patterns
WO2018099836A1 (en) * 2016-11-30 2018-06-07 Az Electronic Materials (Luxembourg) S.A.R.L. Planarizing coating-forming composition and methods for manufacturing planarizing coating and device using the same
WO2018115043A1 (en) 2016-12-21 2018-06-28 Merck Patent Gmbh Novel compound, semiconductor material, and methods for manufacturing coating and semiconductor using the same
US20200201185A1 (en) * 2018-12-21 2020-06-25 Samsung Sdi Co., Ltd. Hardmask composition, hardmask layer and method of forming patterns
WO2020216899A1 (en) * 2019-04-26 2020-10-29 Merck Patent Gmbh Method for manufacturing cured film and use of the same
JP2020183506A (ja) * 2019-04-26 2020-11-12 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 硬化膜の製造方法、およびその使用

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3474054A (en) 1966-09-13 1969-10-21 Permalac Corp The Surface coating compositions containing pyridine salts or aromatic sulfonic acids
US4200729A (en) 1978-05-22 1980-04-29 King Industries, Inc Curing amino resins with aromatic sulfonic acid oxa-azacyclopentane adducts
US4251665A (en) 1978-05-22 1981-02-17 King Industries, Inc. Aromatic sulfonic acid oxa-azacyclopentane adducts
US5187019A (en) 1991-09-06 1993-02-16 King Industries, Inc. Latent catalysts
JP2014219559A (ja) 2013-05-08 2014-11-20 信越化学工業株式会社 レジスト下層膜形成方法及びパターン形成方法
US20170115572A1 (en) * 2015-10-23 2017-04-27 Samsung Sdi Co., Ltd. Method of producing layer structure, and method of forming patterns
WO2018099836A1 (en) * 2016-11-30 2018-06-07 Az Electronic Materials (Luxembourg) S.A.R.L. Planarizing coating-forming composition and methods for manufacturing planarizing coating and device using the same
WO2018115043A1 (en) 2016-12-21 2018-06-28 Merck Patent Gmbh Novel compound, semiconductor material, and methods for manufacturing coating and semiconductor using the same
US20200201185A1 (en) * 2018-12-21 2020-06-25 Samsung Sdi Co., Ltd. Hardmask composition, hardmask layer and method of forming patterns
WO2020216899A1 (en) * 2019-04-26 2020-10-29 Merck Patent Gmbh Method for manufacturing cured film and use of the same
JP2020183506A (ja) * 2019-04-26 2020-11-12 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 硬化膜の製造方法、およびその使用

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
H. J. SALAVAGIONE ET AL.: "Identification of high performance solvents for the sustainable processing of graphene", GREEN CHEMISTRY, 2017, pages 2550, XP055449852, DOI: 10.1039/C7GC00112F

Also Published As

Publication number Publication date
TW202336062A (zh) 2023-09-16
US20240337945A1 (en) 2024-10-10
KR20240121308A (ko) 2024-08-08
EP4449200A1 (en) 2024-10-23
CN118401896A (zh) 2024-07-26
JP2024546259A (ja) 2024-12-19

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