CN118401896A - 厚膜形成用组合物及使用该组合物制造固化膜的方法 - Google Patents

厚膜形成用组合物及使用该组合物制造固化膜的方法 Download PDF

Info

Publication number
CN118401896A
CN118401896A CN202280082281.2A CN202280082281A CN118401896A CN 118401896 A CN118401896 A CN 118401896A CN 202280082281 A CN202280082281 A CN 202280082281A CN 118401896 A CN118401896 A CN 118401896A
Authority
CN
China
Prior art keywords
film
composition
formula
hydrocarbon
mass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280082281.2A
Other languages
English (en)
Chinese (zh)
Inventor
野岛由雄
关藤高志
仁川裕
工藤隆范
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
Merck Patent GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent GmbH filed Critical Merck Patent GmbH
Publication of CN118401896A publication Critical patent/CN118401896A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D165/00—Coating compositions based on macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Coating compositions based on derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Materials For Photolithography (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Insulating Materials (AREA)
  • Paints Or Removers (AREA)
  • Inorganic Insulating Materials (AREA)
CN202280082281.2A 2021-12-13 2022-12-09 厚膜形成用组合物及使用该组合物制造固化膜的方法 Pending CN118401896A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163265315P 2021-12-13 2021-12-13
US63/265,315 2021-12-13
PCT/EP2022/085122 WO2023110660A1 (en) 2021-12-13 2022-12-09 Thick film-forming composition and method for manufacturing cured film using the same

Publications (1)

Publication Number Publication Date
CN118401896A true CN118401896A (zh) 2024-07-26

Family

ID=84689078

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280082281.2A Pending CN118401896A (zh) 2021-12-13 2022-12-09 厚膜形成用组合物及使用该组合物制造固化膜的方法

Country Status (7)

Country Link
US (1) US20240337945A1 (https=)
EP (1) EP4449200A1 (https=)
JP (1) JP2024546259A (https=)
KR (1) KR20240121308A (https=)
CN (1) CN118401896A (https=)
TW (1) TW202336062A (https=)
WO (1) WO2023110660A1 (https=)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3474054A (en) 1966-09-13 1969-10-21 Permalac Corp The Surface coating compositions containing pyridine salts or aromatic sulfonic acids
US4200729A (en) 1978-05-22 1980-04-29 King Industries, Inc Curing amino resins with aromatic sulfonic acid oxa-azacyclopentane adducts
US4251665A (en) 1978-05-22 1981-02-17 King Industries, Inc. Aromatic sulfonic acid oxa-azacyclopentane adducts
US5187019A (en) 1991-09-06 1993-02-16 King Industries, Inc. Latent catalysts
JP5913191B2 (ja) 2013-05-08 2016-04-27 信越化学工業株式会社 レジスト下層膜形成方法及びパターン形成方法
KR101926023B1 (ko) * 2015-10-23 2018-12-06 삼성에스디아이 주식회사 막 구조물 제조 방법 및 패턴형성방법
JP2018091943A (ja) * 2016-11-30 2018-06-14 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 平坦化膜形成組成物、これを用いた平坦化膜およびデバイスの製造方法
JP2018100249A (ja) 2016-12-21 2018-06-28 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ 新規化合物、半導体材料、およびこれを用いた膜および半導体の製造方法
KR102397179B1 (ko) * 2018-12-21 2022-05-11 삼성에스디아이 주식회사 하드마스크 조성물, 하드마스크 층 및 패턴 형성 방법
JP2020183506A (ja) * 2019-04-26 2020-11-12 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 硬化膜の製造方法、およびその使用
KR102716551B1 (ko) * 2019-04-26 2024-10-15 메르크 파텐트 게엠베하 경화막의 제조방법 및 이의 용도

Also Published As

Publication number Publication date
TW202336062A (zh) 2023-09-16
US20240337945A1 (en) 2024-10-10
KR20240121308A (ko) 2024-08-08
EP4449200A1 (en) 2024-10-23
WO2023110660A1 (en) 2023-06-22
JP2024546259A (ja) 2024-12-19

Similar Documents

Publication Publication Date Title
KR102948556B1 (ko) 탄소 재료, 금속 유기 화합물 및 용매를 포함하는 스핀 코팅 조성물, 및 기판 위 금속 산화물 막의 제조 방법
US8524851B2 (en) Silicon-based hardmask composition and process of producing semiconductor integrated circuit device using the same
CN110088072B (zh) 新型化合物、半导体材料、以及使用了其的膜以及半导体的制造方法
KR102364126B1 (ko) 패턴 형성 방법, 수지 및 레지스트 하층막 형성 조성물
TWI822687B (zh) 用以製備光阻下層膜的聚合物、包括該聚合物的光阻下層膜組成物以及使用該組成物製造半導體元件的方法
KR20190098217A (ko) 금속 산화물 나노입자 및 유기 중합체를 함유하는 스핀-온 물질의 조성물
TWI869396B (zh) 硬化膜之製造方法、及其用途
CN102695987B (zh) 光致抗蚀剂底层组合物和使用其制造半导体器件的方法
CN107337776A (zh) 聚合物、有机层组成物以及形成图案的方法
JP7554799B2 (ja) エチニル誘導体コンポジット、それを含んでなる組成物、それによる塗膜の製造方法、およびその塗膜を含んでなる素子の製造方法
TW202513633A (zh) 硬化膜之製造方法、及其用途
TW201816005A (zh) 聚合物、有機層組成物與形成圖案之方法
JP2023031300A (ja) ハードマスク組成物、ハードマスク層およびパターン形成方法
CN118401896A (zh) 厚膜形成用组合物及使用该组合物制造固化膜的方法
TW201840617A (zh) 相分離構造形成用樹脂組成物，以及包含相分離構造之構造體之製造方法
JP7428766B2 (ja) ハードマスク組成物、ハードマスク層およびパターン形成方法
CN106084159B (zh) 聚合物、有机层组合物以及形成图案的方法
JP7630592B2 (ja) ハードマスク組成物、ハードマスク層、およびパターン形成方法
US20250060670A1 (en) Method For Forming Resist Underlayer Film And Patterning Process
TW201835028A (zh) 含碳之下層膜形成組成物、使用其之含碳下層膜及裝置之製造方法
JP2026016055A (ja) 有機膜形成用組成物、有機膜形成方法及びパターン形成方法
CN120981776A (zh) 厚膜化组合物、制造经厚膜化的抗蚀剂图案的方法、以及制造经加工基板的方法
TW202436415A (zh) 硬遮罩組合物、硬遮罩層以及形成圖案的方法
TW202112906A (zh) 微影用膜形成材料、微影用膜形成用組成物、微影用下層膜及圖型形成方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination