WO2023087714A1 - 半导体超结功率器件 - Google Patents

半导体超结功率器件 Download PDF

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WO2023087714A1
WO2023087714A1 PCT/CN2022/101535 CN2022101535W WO2023087714A1 WO 2023087714 A1 WO2023087714 A1 WO 2023087714A1 CN 2022101535 W CN2022101535 W CN 2022101535W WO 2023087714 A1 WO2023087714 A1 WO 2023087714A1
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刘伟
刘磊
袁愿林
王睿
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苏州东微半导体股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Definitions

  • the present application belongs to the technical field of semiconductor power devices, for example, it relates to a semiconductor superjunction power device.
  • Semiconductor super-junction power devices are based on charge balance technology, which can reduce on-resistance and parasitic capacitance, making semiconductor super-junction power devices have extremely fast switching characteristics, which can reduce switching losses and achieve higher power conversion efficiency.
  • the gate-to-drain capacitance (Cgd) will change abruptly, which causes the gate voltage of the semiconductor super-junction power device to oscillate seriously.
  • the present application provides a semiconductor super-junction power device, so as to avoid the sudden change of the gate-drain capacitance of the semiconductor super-junction power device in the related art.
  • a semiconductor super-junction power device provided in an embodiment of the present application includes a terminal region and a cellular region, and the cellular region includes:
  • each of the p-type pillars in the plurality of p-type pillars is provided with a p-type body region corresponding to the p-type pillars, and an n-type source region is arranged in the p-type body region.
  • the widths of the p-type body regions are equal;
  • the symmetry axes of at least part of the p-type body regions are offset from the symmetry axes of the corresponding p-type columns, so that the distance between the two gate trenches between two adjacent p-type body regions has at least two different spacing value.
  • FIG. 1 is a schematic cross-sectional structure diagram of a first embodiment of a semiconductor superjunction power device provided by the present application.
  • Fig. 1 is a schematic cross-sectional structure diagram of a first embodiment of a semiconductor super-junction power device provided by the present application.
  • a semiconductor super-junction power device provided by an embodiment of the present application includes a terminal region and a cell region, The cell region includes an n-type drain region 20, and the n-type drain region 20 may be externally connected to a drain voltage through a metal layer.
  • An n-type drift region 21 located above the n-type drain region 20 is an n-type drain region 20 .
  • a plurality of p-type columns 22 for the convenience of display and description, only three p-type columns 22 are shown in FIG. 1 as an example.
  • the multiple p-type pillars 22 have the same width, and the distance between two adjacent p-type pillars 22 is equal, and a charge-balanced pn junction structure is formed between the p-type pillars 22 and the adjacent n-type drift regions 21 .
  • each p-type column 22 among the plurality of p-type columns 22 is respectively provided with a p-type body region corresponding to the p-type column 22 one-to-one, and the p-type body region 23a, p-type The body region 23b and the p-type body region 23c are three p-type body regions, and the widths of the p-type body regions are all equal.
  • An n-type source region 24 is provided in each p-type body region.
  • each p-type body region Setting the width of each p-type body region to be equal can make the layout design size of each p-type body region the same, and at the same time, the layout design size of each n-type source region is also the same, which simplifies the design of semiconductor superjunction power devices. design.
  • gate trenches between two adjacent p-type body regions have the same width
  • a gate dielectric layer 26 and a gate 27 are arranged in the gate trenches, and the gate 27 is usually
  • the on and off of the current channel between the n-type source region 24 and the n-type drift region 21 is controlled by the gate voltage.
  • the symmetry axis of at least part of the p-type body region is offset from the symmetry axis of the corresponding p-type column, because the width of each p-type column 22 in the plurality of p-type columns 22 is equal , and the distances between adjacent p-type pillars 22 are equal, and the widths of the p-type body regions are equal at the same time, which makes the distance between the two gate trenches between two adjacent p-type body regions have at least two different spacing values.
  • the p-type body region 23a and p-type body region 23c coincide with the symmetry axis of their corresponding p-type column 22, and the symmetry axis of the p-type body region 23b and its corresponding p-type column 22 are in the same direction.
  • the distance b is offset to the right, so that the spacing between the two gate trenches between two adjacent p-type body regions in Figure 1 has two different spacing values, a1 and a2, and the difference between a1 and a2 for 2b.
  • the distance between two gate trenches between two adjacent p-type body regions can be set in sequence: C, C+1D, C, C+1D, C, ..., that is, at least part of the spacing between two gate trenches between two adjacent p-type body regions has two different spacing values, which are set at intervals in sequence; or set in sequence: C, C+1D, ..., C+nD, C+(n 1)D, ..., C, C+1D, ..., C+nD, C+(n 1)D, ..., C, ..., i.e.
  • the spacing values between the two gate trenches adjacent to the two p-type body regions first increase sequentially, then decrease sequentially, then increase sequentially, and then decrease sequentially, and so on; or set in sequence: C, C, ..., C+1D, C+1D, ..., C+nD, C+nD, ..., C+(n 1)D, C+(n 1)D, ..., C, C, ..., namely two adjacent
  • the spacing values between two gate trenches between p-type body regions include multiple sets of spacing value groups.
  • n ⁇ 2 and n is an integer
  • C is the basic spacing value of the spacing between two gate trenches between two adjacent p-type body regions and C>0
  • D is the phase The value of the variation of the spacing between two gate trenches adjacent to two p-type body regions and D>0, and the specific values of n, C, and D are determined according to product design requirements.
  • the spacing value is smaller
  • the region of the gap will be depleted first, and the gate-drain capacitance will drop suddenly at this source-drain voltage point; then, as the source-drain voltage further increases, the regions with larger spacing values will be depleted in turn, and the gate-drain capacitance will be in these
  • the source-drain voltage points drop suddenly in turn, thus, the sudden point of the gate-drain capacitance of the semiconductor super-junction power device is divided into several different source-drain voltage points, which makes the gate of the semiconductor super-junction power device turn on and off.
  • the sudden change speed of the drain capacitance is reduced, which reduces the gate voltage oscillation of the semiconductor super-junction power device.
  • a semiconductor superjunction power device of the present application adopts a double-groove gate structure between adjacent p-type body regions, and by adjusting the offset of the symmetry axis of the p-type body region and the symmetry axis of the corresponding p-type column,
  • the spacing between the two gate trenches between two adjacent p-type body regions has at least two different spacing values, which can make the gate-drain capacitance of the semiconductor superjunction power device change suddenly when it is turned on or off The speed is reduced, and the gate voltage oscillation of the semiconductor superjunction power device is reduced.

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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

一种半导体超结功率器件，包括n型漏区（20）、n型漂移区（21）、多个p型柱（22），多个p型柱的宽度相等，且相邻两个p型柱之间的间距相等；p型柱的顶部设有与p型柱一一对应的p型体区（23a、23b、23c），p型体区内设有n型源区（24），多个p型体区的宽度相等；介于相邻两个p型体区之间的两个栅沟槽，栅沟槽的宽度相等；至少部分p型体区的对称轴线与对应的p型柱的对称轴线存在偏移，使得相邻两个p型体区之间的两个栅沟槽之间的间距具有至少两种不同的间距值。

Description

半导体超结功率器件
本申请要求在2021年11月17日提交中国专利局、申请号为202111359631.9的中国专利申请的优先权，该申请的全部内容通过引用结合在本申请中。
技术领域
本申请属于半导体功率器件技术领域，例如涉及一种半导体超结功率器件。
背景技术
半导体超结功率器件基于电荷平衡技术，可以降低导通电阻和寄生电容，使得半导体超结功率器件具有极快的开关特性，可以降低开关损耗，实现更高的功率转换效率。相关技术中的半导体超结功率器件在开启和关断时，栅漏电容(Cgd)会发生突变，这使得半导体超结功率器件的栅极电压震荡严重。
发明内容
有鉴于此，本申请提供一种半导体超结功率器件，以避免相关技术中的半导体超结功率器件的栅漏电容突变情况。
本申请实施例提供的一种半导体超结功率器件，包括终端区和元胞区，所述元胞区包括：
n型漏区、n型漂移区和多个p型柱，所述多个p型柱的宽度相等，且相邻两个所述p型柱之间的间距相等；
所述多个p型柱中的每个所述p型柱的顶部设有与所述p型柱一一对应的p型体区，所述p型体区内设有n型源区，多个p型体区的宽度相等；
介于相邻两个所述p型体区之间的两个栅沟槽，所述栅沟槽的宽度相等，所述栅沟槽内设有栅介质层和栅极；
至少部分p型体区的对称轴线与对应的p型柱的对称轴线存在偏移，使得相邻两个所述p型体区之间的两个栅沟槽之间的间距具有至少两种不同的间距值。
附图说明
下面对描述实施例中所需要用到的附图做一简单介绍。
图1是本申请提供的半导体超结功率器件的第一个实施例的剖面结构示意图。
具体实施方式
以下将结合本申请实施例中的附图，通过具体方式，完整地描述本申请的技术方案。同时，为清楚地说明本申请的具体实施方式，说明书附图中所列图 形大小并不代表实际尺寸，说明书附图是示意性的，不应限定本申请的范围。
图1是本申请提供的半导体超结功率器件的第一个实施例的剖面结构示意图，如图1所示，本申请实施例提供的一种半导体超结功率器件包括终端区和元胞区，所述元胞区包括n型漏区20，n型漏区20可以通过金属层外接漏极电压。位于n型漏区20之上的n型漂移区21。
多个p型柱22，为了方便展示和说明，图1中仅示例性的示出了三个p型柱22。多个p型柱22的宽度相等，且相邻的两个p型柱22之间的间距相等，p型柱22与相邻的n型漂移区21之间形成电荷平衡的pn结结构。
多个p型柱22中的每个p型柱22的顶部分别设有与p型柱22一一对应的p型体区，图1中示例性的示出了p型体区23a、p型体区23b和p型体区23c三个p型体区，p型体区的宽度均相等。在每个p型体区内设有n型源区24。
将每个p型体区的宽度设置为均相等，可以使得每个p型体区的版图设计尺寸均相同，同时每个n型源区的版图设计尺寸也相同，简化半导体超结功率器件的设计。
介于相邻两个p型体区之间的两个栅沟槽，所述栅沟槽的宽度均相等，所述栅沟槽内设有栅介质层26和栅极27，栅极27通常通过栅极电压来控制n型源区24与n型漂移区21之间的电流沟道的开启和关断。
本申请的半导体超结功率器件，至少有部分p型体区的对称轴线与其对应的p型柱的对称轴线产生偏移，由于多个p型柱22中的每个p型柱22的宽度相等，且相邻的p型柱22之间的间距相等，同时p型体区的宽度均相等，这使得相邻两个p型体区之间的两个栅沟槽之间的间距具有至少两种不同的间距值。示例性的，图1中，p型体区23a和p型体区23c与其对应的p型柱22的对称轴线重合，p型体区23b的对称轴线与其对应的p型柱22的对称轴线向右偏移距离b，由此，使得图1中的相邻两个p型体区之间的两个栅沟槽之间的间距具有a1和a2两种不同的间距值，a1与a2的差为2b。
通过设定一个或多个p型体区的偏移，可以使得相邻两个p型体区之间的两个栅沟槽之间的间距值依次设为：C、C+1D、C、C+1D、C、…，即至少部分相邻两个p型体区之间的两个栅沟槽之间的间距具有两种不同的间距值，并依次间隔循环设置；或者依次设为：C、C+1D、…、C+nD、C+(n 1)D、…、C、C+1D、…、C+nD、C+(n 1)D、…、C、…，即至少部分相邻两个p型体区之间的两个栅沟槽之间的间距值先依次增大，再依次减小，再依次增大，再依次 减小，如此循环；或者依次设为：C、C、…、C+1D、C+1D、…、C+nD、C+nD、…、C+(n 1)D、C+(n 1)D、…、C、C、…，即相邻两个p型体区之间的两个栅沟槽之间的间距值包括多组间距值组，同一间距值组中的间距值相同，不同间距值组中的间距值先依次增大，再依次减小，如此循环，其中：n≥2且n为整数；C为相邻两个p型体区之间的两个栅沟槽之间的间距的基本间距值且C>0；D为相邻两个p型体区之间的两个栅沟槽之间的间距的变化的值且D>0，n、C、D的具体数值依据产品设计要求确定。
通过设置不同的相邻两个p型体区之间的两个栅沟槽之间的间距值，半导体超结功率器件在开启和关断时，随着源漏电压的上升，间距值较小的区域会被先耗尽，栅漏电容会在这个源漏电压点突然下降；然后，随着源漏电压的进一步上升，间距值较大的区域会被依次耗尽，栅漏电容会在这些源漏电压点依次突然下降，从而，半导体超结功率器件的栅漏电容的突变点被分到几个不同的源漏电压点上，这使得半导体超结功率器件在开启和关断时的栅漏电容突变速度降低，减小了半导体超结功率器件的栅极电压震荡。
本申请的一种半导体超结功率器件在相邻的p型体区之间采用双沟槽栅极结构，通过调节p型体区的对称轴线与其对应的p型柱的对称轴线的偏移，使得相邻两个所述p型体区之间的两个栅沟槽之间的间距具有至少两种不同的间距值，能够使得半导体超结功率器件在开启或关断时的栅漏电容突变速度降低，减小了半导体超结功率器件的栅极电压震荡。

Claims (2)

  1. 一种半导体超结功率器件，包括终端区和元胞区，所述元胞区包括：
    n型漏区、n型漂移区和多个p型柱，所述多个p型柱的宽度相等，且相邻两个所述p型柱之间的间距相等；
    所述多个p型柱中的每个所述p型柱的顶部设有与所述p型柱一一对应的p型体区，所述p型体区内设有n型源区，多个p型体区的宽度相等；
    介于相邻两个所述p型体区之间的两个栅沟槽，所述栅沟槽的宽度相等，所述栅沟槽内设有栅介质层和栅极；
    至少部分p型体区的对称轴线与对应的p型柱的对称轴线存在偏移，使得相邻两个所述p型体区之间的两个栅沟槽之间的间距具有至少两种不同的间距值。
  2. 根据权利要求1所述的半导体超结功率器件，其中，相邻两个所述p型体区之间的两个栅沟槽之间的间距值依次设为以下之一：
    C、C+1D、C、C+1D、C、…；
    C、C+1D、…、C+nD、C+(n 1)D、…、C、C+1D、…、C+nD、C+(n 1)D、…、C、…；以及
    C、C、…、C+1D、C+1D、…、C+nD、C+nD、…、C+(n 1)D、C+(n 1)D、…、C、C、…；
    其中：n≥2且n为整数，C为相邻两个所述p型体区之间的两个栅沟槽之间的间距的基本间距值，且C>0；D为相邻两个所述p型体区之间的两个栅沟槽之间的间距的变化的值，且D>0。
PCT/CN2022/101535 2021-11-17 2022-06-27 半导体超结功率器件 WO2023087714A1 (zh)

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CN105428397A (zh) * 2015-11-17 2016-03-23 深圳尚阳通科技有限公司 超结器件及其制造方法
CN107464837A (zh) * 2017-08-07 2017-12-12 电子科技大学 一种超结功率器件
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JP2003124465A (ja) * 2001-10-17 2003-04-25 Fuji Electric Co Ltd 半導体素子
CN104952928A (zh) * 2015-04-30 2015-09-30 苏州东微半导体有限公司 一种栅漏电容缓变的超结功率器件及其制造方法
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