WO2023084879A1 - 電子部品 - Google Patents

電子部品 Download PDF

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Publication number
WO2023084879A1
WO2023084879A1 PCT/JP2022/032713 JP2022032713W WO2023084879A1 WO 2023084879 A1 WO2023084879 A1 WO 2023084879A1 JP 2022032713 W JP2022032713 W JP 2022032713W WO 2023084879 A1 WO2023084879 A1 WO 2023084879A1
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WO
WIPO (PCT)
Prior art keywords
glass film
base electrode
thickness
electrode
electronic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/032713
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English (en)
French (fr)
Japanese (ja)
Inventor
知也 大島
悠太 星野
耕市 山田
美希 佐々木
充 中野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP2023559440A priority Critical patent/JP7582508B2/ja
Publication of WO2023084879A1 publication Critical patent/WO2023084879A1/ja
Priority to US18/400,627 priority patent/US12488917B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points specially adapted for resistors; Arrangements of terminals or tapping points on resistors
    • H01C1/1413—Terminals or electrodes formed on resistive elements having negative temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points specially adapted for resistors; Arrangements of terminals or tapping points on resistors
    • H01C1/148—Terminals or tapping points specially adapted for resistors; Arrangements of terminals or tapping points on resistors the terminals embracing or surrounding the resistive element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/29—Terminals; Tapping arrangements for signal inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/224—Housing; Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/041—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed with two or more layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
    • H01G4/2325—Terminals electrically connecting two or more layers of a stacked or rolled capacitor characterised by the material of the terminals

Definitions

  • the present invention relates to electronic components.
  • the electronic component described in Patent Document 1 includes a base body, internal electrodes, a glass film, and external electrodes.
  • the internal electrodes are located inside the element body.
  • a glass film covers the outer surface of the element.
  • the external electrode partially covers the glass membrane. Also, the external electrodes are electrically connected to the internal electrodes.
  • moisture and gas may enter the boundary between the external electrode and the glass film from the edge of the external electrode. Once the moisture or the like reaches the boundary between the external electrode and the glass film, it is difficult to release the moisture or the like into the atmosphere, and the moisture or the like remains at the interface between the external electrode and the glass film for a long time. .
  • the glass film is a material impervious to moisture, etc., it is difficult to prevent moisture from reaching the element body if it is exposed to moisture for a long period of time.
  • the present invention includes a base body, wiring located inside the base body, a glass film covering the outer surface of the base body, and the wiring being electrically connected to each other. and a base electrode partially covering the glass film, and a metal layer covering the base electrode, wherein the glass film is not covered with the base electrode and is larger than 10 ⁇ m from the outer edge of the base electrode.
  • a portion that is far away is defined as an uncovered portion
  • a portion that is not covered by the underlying electrode and is not separated by more than 10 ⁇ m from the outer edge of the underlying electrode is defined as a boundary portion
  • the thickness of the boundary portion is defined as the thickness of the uncovered portion.
  • the boundary portion of the glass film is covered with the metal layer protruding from the base electrode.
  • the thickness of the boundary is large enough to prevent the moisture or the like from penetrating the boundary and reaching the element body. can be suppressed. It is unlikely that the non-coated portion of the glass film will continue to be exposed to moisture for a long period of time. Therefore, even if the thickness of the glass film in the non-coated portion is relatively small, it is possible to sufficiently prevent moisture or the like from reaching the element.
  • FIG. 1 is a perspective view of an electronic component; FIG. It is a side view of an electronic component. 3 is a cross-sectional view taken along line 3-3 of FIG. 2; FIG. FIG. 4 is an enlarged cross-sectional view of a covered portion; It is an enlarged cross-sectional view of an uncovered portion. It is an enlarged cross-sectional view of a boundary location.
  • It is explanatory drawing explaining the manufacturing method of an electronic component. is explanatory drawing explaining the manufacturing method of an electronic component. It is explanatory drawing explaining the manufacturing method of an electronic component. It is explanatory drawing explaining the manufacturing method of an electronic component. It is explanatory drawing explaining the manufacturing method of an electronic component. It is explanatory drawing explaining the manufacturing method of an electronic component. It is explanatory drawing explaining the manufacturing method of an electronic component. It is explanatory drawing explaining the manufacturing method of an electronic component. It is an enlarged sectional view of the covered part of the electronic component of a modification.
  • the electronic component 10 is, for example, a surface mount type negative characteristic thermistor component mounted on a circuit board or the like. Negative characteristic thermistor components have the characteristic that the resistance value decreases as the temperature rises.
  • the electronic component 10 includes a base body 20.
  • the element body 20 has a substantially quadrangular prism shape and has a central axis CA. Note that the axis extending along the central axis CA is referred to as a first axis X hereinafter.
  • One of the axes perpendicular to the first axis X is defined as a second axis Y.
  • An axis orthogonal to the first axis X and the second axis Y is defined as a third axis Z. As shown in FIG.
  • one of the directions along the first axis X is defined as a first positive direction X1, and the direction opposite to the first positive direction X1 among the directions along the first axis X is defined as a first negative direction X2.
  • One of the directions along the second axis Y is defined as a second positive direction Y1, and the direction opposite to the second positive direction Y1 among the directions along the second axis Y is defined as a second negative direction Y2.
  • one of the directions along the third axis Z is defined as a third positive direction Z1, and the direction opposite to the third positive direction Z1 among the directions along the third axis Z is defined as a third negative direction Z2.
  • the outer surface 21 of the base body 20 has six planar planes 22 .
  • the term "surface" of the base body 20 as used herein refers to a surface that can be observed when the entire base body 20 is observed. In other words, for example, even if there are minute irregularities or steps that cannot be recognized unless a part of the element body 20 is enlarged and observed with a microscope or the like, it is expressed as a flat surface or a curved surface.
  • the six planes 22 extend in different directions.
  • the six planes 22 are roughly divided into a first end face 22A facing the first positive direction X1, a second end face 22B facing the first negative direction X2, and four side faces 22C.
  • the four side surfaces 22C are a surface facing the third positive direction Z1, a surface facing the third negative direction Z2, a surface facing the second positive direction Y1, and a surface facing the second negative direction Y2. .
  • Boundary surface 23 includes a curved surface that exists on the boundary between adjacent flat surfaces 22 . That is, the boundary surface 23 includes a curved surface formed by, for example, rounding the corners forming the adjacent flat surfaces 22 .
  • the outer surface 21 of the base body 20 has eight spherical corner surfaces 24 .
  • a corner surface 24 is a boundary portion between three adjacent planes 22 .
  • the corner surface 24 includes curved surfaces where the three boundary surfaces 23 meet. That is, the corner surface 24 includes a curved surface formed by, for example, rounding the corner formed by the three adjacent flat surfaces 22 .
  • the surface of the glass film 50 which will be described later, is identified with the outer surface 21 of the element body 20 and denoted by reference numerals.
  • the dimension of the base body 20 in the direction along the first axis X is larger than the dimension in the direction along the third axis Z.
  • the dimension in the direction along the first axis X of the element body 20 is larger than the dimension in the direction along the second axis Y.
  • the material of the element body 20 is a semiconductor.
  • the material of the element body 20 is ceramics obtained by firing a metal oxide containing at least one of Mn, Fe, Ni, Co, Ti, Ba, Al, and Zn.
  • the electronic component 10 includes two first internal electrodes 41 and two second internal electrodes 42 as wiring.
  • the first internal electrodes 41 and the second internal electrodes 42 are embedded inside the element body 20 .
  • the material of the first internal electrode 41 is a conductive material.
  • the material of the first internal electrode 41 is palladium.
  • the material of the second internal electrode 42 is the same as the material of the first internal electrode 41 .
  • the shape of the first internal electrode 41 is a rectangular plate.
  • the main surface of the first internal electrode 41 is perpendicular to the second Y axis.
  • the shape of the second internal electrode 42 is the same rectangular plate shape as the first internal electrode 41 .
  • the main surface of the second internal electrode 42 is perpendicular to the second axis Y, like the first internal electrode 41 .
  • the dimension of the first internal electrode 41 in the direction along the first axis X is smaller than the dimension in the direction along the first axis X of the element body 20 . Further, as shown in FIG. 1, the dimension of the first internal electrode 41 in the direction along the third axis Z is approximately two thirds of the dimension in the direction along the third axis Z of the element body 20 .
  • the dimensions in each direction of the second internal electrodes 42 are the same as the dimensions of the first internal electrodes 41 .
  • the first internal electrodes 41 and the second internal electrodes 42 are alternately positioned in the direction along the second Y axis. That is, the first internal electrode 41, the second internal electrode 42, the first internal electrode 41, and the second internal electrode 42 are arranged in this order from the side surface 22C facing the second positive direction Y1 toward the second negative direction Y2. In this embodiment, the distances along the second axis Y between the internal electrodes are equal.
  • both the two first internal electrodes 41 and the two second internal electrodes 42 are positioned at the center of the element body 20 in the direction along the third axis Z.
  • the first internal electrodes 41 are positioned closer to the first positive direction X1.
  • the second internal electrode 42 is positioned closer to the first negative direction X2.
  • the end of the first internal electrode 41 on the first positive direction X1 side coincides with the end of the element body 20 on the first positive direction X1 side.
  • the end of the first internal electrode 41 on the first negative direction X2 side is positioned inside the element body 20 and does not reach the end of the element body 20 on the first negative direction X2 side.
  • the end of the second internal electrode 42 on the first negative direction X2 side coincides with the end of the element body 20 on the first negative direction X2 side.
  • the end of the second internal electrode 42 on the first positive direction X1 side is located inside the element body 20 and does not reach the end of the element body 20 on the first positive direction X1 side.
  • the electronic component 10 includes a glass film 50.
  • the glass film 50 covers the outer surface 21 of the element body 20 .
  • the glass film 50 covers the entire outer surface 21 of the element body 20 .
  • the material of the glass film 50 is glass.
  • the glass consists of silicon dioxide.
  • the electronic component 10 includes first external electrodes 61 and second external electrodes 62 .
  • the first external electrode 61 has a first base electrode 61A and a first metal layer 61B.
  • the first base electrode 61A is laminated on the glass film 50 on a part of the outer surface 21 of the base body 20 including the first end face 22A. That is, the first base electrode 61A partially covers the outer surface 21 of the element body 20.
  • the first base electrode 61A is a five-sided electrode that covers the first end face 22A of the base body 20 and part of the four side faces 22C on the first positive direction X1 side.
  • the materials of the first base electrode 61A are silver and glass.
  • the first base electrode 61A is a sintered body. Therefore, as shown in FIG. 4, the first base electrode 61A includes many pores P that are hollow. Of the materials forming the first base electrode 61A, part of the glass G exists inside the pores P, but at least part of the pores P is in a hollow state where the glass G and the like do not exist. Some of the pores P in the first base electrode 61A are in contact with the glass film 50. As shown in FIG.
  • the first metal layer 61B covers the first base electrode 61A from the outside. Therefore, the first metal layer 61B is stacked on the first base electrode 61A. A part of the first metal layer 61B protrudes from the first base electrode 61A. That is, part of the outer edge of the first metal layer 61B directly covers the glass film 50 without interposing the first base electrode 61A. Although illustration is omitted, the first metal layer 61B has a two-layer structure of a nickel layer and a tin layer in order from the first base electrode 61A side.
  • the second external electrode 62 has a second base electrode 62A and a second metal layer 62B.
  • the second base electrode 62A is laminated on the glass film 50 on a part of the outer surface 21 of the base body 20 including the second end surface 22B. That is, the second base electrode 62A partially covers the outer surface 21 of the element body 20.
  • the second base electrode 62A is a five-sided electrode that covers the second end face 22B of the base body 20 and part of the four side faces 22C on the first negative direction X2 side.
  • the material of the second base electrode 62A is the same as the material of the first external electrode 61, which is silver and glass.
  • the second base electrode 62A is a sintered body, like the first base electrode 61A. Therefore, although illustration is omitted, the second base electrode 62A includes a large number of pores P that are hollow. Among the materials constituting the second base electrode 62A, part of the glass exists inside the pores P, but at least part of the pores P is in a hollow state where no glass or the like exists. Some of the pores P in the second base electrode 62A are in contact with the glass film 50. As shown in FIG.
  • the second metal layer 62B covers the second base electrode 62A from the outside. Therefore, the second metal layer 62B is stacked on the second base electrode 62A. A portion of the second metal layer 62B protrudes from the second base electrode 62A. That is, part of the outer edge of the second metal layer 62B directly covers the glass film 50 without the second base electrode 62A.
  • the second metal layer 62B has a two-layer structure of a nickel layer and a tin layer in order from the second base electrode 62A side, like the first metal layer 61B.
  • the second external electrode 62 does not reach the first external electrode 61 on the side surface 22C, and is arranged away from the first external electrode 61 in the direction along the first axis X.
  • the first external electrode 61 and the second external electrode 62 are not laminated on the central portion in the direction along the first axis X, and the glass film 50 is exposed. 1 to 3, the first external electrode 61 and the second external electrode 62 are illustrated by two-dot chain lines.
  • the first external electrode 61 and the end of the first internal electrode 41 on the first positive direction X1 side are connected via a first penetrating portion 71 penetrating through the glass film 50 . Therefore, the first external electrode 61 is electrically connected to the first internal electrode 41 .
  • the first penetrating portion 71 is formed by extending the palladium forming the first internal electrode 41 toward the first external electrode 61 during the manufacturing process of the electronic component 10 .
  • the second external electrode 62 and the end of the second internal electrode 42 on the first negative direction X2 side are connected via a second penetrating portion 72 penetrating through the glass film 50 . Therefore, the second external electrode 62 is electrically connected to the second internal electrode 42 .
  • the second through portion 72 is also formed by extending the palladium constituting the first internal electrode 41 toward the second external electrode 62 during the manufacturing process of the electronic component 10 .
  • FIG. 3 illustrates the first internal electrode 41 and the first through portion 71 as separate members having a boundary, there is actually no clear boundary between them. In this regard, the same applies to the second through portion 72 . Also, in FIG. 1, illustration of the first through portion 71 is omitted.
  • the glass film 50 has a covered portion AC, an uncovered portion AU, and a boundary portion AB.
  • the covered portion AC is a portion of the glass film 50 that is covered with the first base electrode 61A or the second base electrode 62A.
  • FIG. 4 illustrates the covered portion AC covered with the first base electrode 61A.
  • the thickness of the covered portion AC is calculated as follows. First, a cross section perpendicular to the first end surface 22A and one side surface 22C is photographed with an electron microscope. Next, the range of the photographed image in the direction along the outer surface 21 of the covered portion AC is specified. In this range, the cross-sectional area of the glass film 50 is calculated by image processing for at least a measurement range of 5 ⁇ m or more. Then, the thickness of the coated portion AC is calculated by dividing the cross-sectional area of the glass film 50 in the calculated measurement range by the length of the measurement range. That is, the thickness of the coated portion AC is the average thickness in the measurement range.
  • the uncovered portion AU of the glass film 50 is not covered with either the first base electrode 61A or the second base electrode 62A, and the outer edge of the first base electrode 61A and the This is a location that is farther than 10 ⁇ m from both outer edges of the second base electrode 62A.
  • the thickness of the uncovered portion AU is calculated as follows. First, a cross section perpendicular to one side surface 22C and parallel to the first axis X is photographed with an electron microscope. Next, the range in the direction along the outer surface 21 of the uncovered portion AU is specified for the photographed image. In this range, the cross-sectional area of the glass film 50 is calculated by image processing for the same length measurement range as when the thickness of the covered portion AC was measured.
  • the position is determined so that the center of the uncovered portion AU in the direction along the first axis X is the center of the measurement range of the uncovered portion AU in the direction along the first axis X. . Then, the thickness of the uncovered portion AU is calculated by dividing the cross-sectional area of the glass film 50 in the calculated measurement range by the length of the measurement range. That is, the thickness of the uncovered portion AU is the average thickness in the measurement range.
  • the boundary point AB exists near the first base electrode 61A and near the second base electrode 62A. That is, as shown in FIG. 6, one of the two boundary points AB is not covered with the first base electrode 61A in the glass film 50 and is larger than 10 ⁇ m from the outer edge of the first base electrode 61A. It is a place that is not far away.
  • One of the two boundary points AB is a portion of the glass film 50 that is not covered with the second base electrode 62A and is not farther than 10 ⁇ m from the outer edge of the second base electrode 62A.
  • the thickness of the boundary point AB is calculated as follows. First, a cross section perpendicular to one side surface 22C and parallel to the first axis X is photographed with an electron microscope.
  • the range of the captured image in the direction along the outer surface 21 of the boundary point AB is specified.
  • This range is 10 ⁇ m.
  • the cross-sectional area of the glass film 50 is calculated by image processing.
  • the thickness of the boundary point AB is calculated by dividing the cross-sectional area of the glass film 50 in the calculated range by 10 ⁇ m, which is the length of the measurement range. That is, the thickness of the boundary point AB is the average thickness of the entire boundary point AB.
  • the thickness of the covered portion AC is larger than the thickness of the uncovered portion AU.
  • the thickness of the boundary portion AB is greater than the thickness of the covered portion AC. That is, the thickness of the covered portion AC is smaller than the thickness of the boundary portion AB.
  • the thickness of the uncovered portion AU is 30 nm or more. Also, the thickness of the boundary portion AB is 1000 nm or less.
  • the coefficient of variation of the thickness of the coated portion AC is larger than the coefficient of variation of the thickness of the uncoated portion AU. That is, the surface of the covered portion AC is rougher than that of the uncovered portion AU.
  • the coefficient of variation of the thickness at each location is calculated as follows. First, five maximum values of the thickness of the glass film 50 are measured in the measurement range. Next, five minimum values of the glass film 50 are measured in the measurement range. Next, the average value and the standard deviation of the thickness of 10 points in total are calculated. Then, the coefficient of variation is calculated by dividing this standard deviation by the average value of the thicknesses at ten locations.
  • the method for manufacturing the electronic component 10 includes a laminate preparation step S11, an R-chamfering step S12, a solvent charging step S13, a catalyst charging step S14, an element charging step S15, and a polymer charging step S15.
  • a step S16 and a metal alkoxide introduction step S17 are provided.
  • the method for manufacturing the electronic component 10 further includes a film forming step S18, a drying step S19, a conductor coating step S20, a curing step S21, and a plating step S22.
  • a layered body that is the element body 20 without the boundary surface 23 and the corner surface 24 is prepared. That is, the laminate is in a state before R-chamfering, and has a rectangular parallelepiped shape having six flat surfaces 22 .
  • a plurality of ceramic sheets to be the element body 20 are prepared. The sheet is a thin plate. A conductive paste to be the first internal electrodes 41 is laminated on the sheet. A ceramic sheet to be the element body 20 is laminated on the lamination paste. A conductive paste that becomes the second internal electrode 42 is laminated on the sheet. Thus, the ceramic sheet and the conductive paste are laminated. Then, by cutting into a predetermined size, an unfired laminate is formed. After that, the laminate is prepared by baking the unbaked laminate at a high temperature.
  • the R chamfering process S12 is performed.
  • the boundary surface 23 and the corner surface 24 are formed in the laminate prepared in the laminate preparation step S11.
  • the corners of the laminated body are chamfered by barrel polishing to form a boundary surface 23 having a curved surface and a corner surface 24 having a curved surface.
  • the element body 20 is formed.
  • solvent injection step S13 is performed.
  • 2-propanol is charged as a solvent 82 into the reaction vessel 81.
  • a catalyst charging step S14 is performed.
  • FIG. 9 in the catalyst charging step S14, first, stirring of the solvent 82 in the reaction vessel 81 is started. Then, ammonia water is put into the reaction vessel 81 as an aqueous solution 83 containing a catalyst.
  • the catalyst in this embodiment is hydroxide ions, and functions as a catalyst that promotes hydrolysis of metal alkoxide 85, which will be described later.
  • the element loading step S15 is performed. As shown in FIG. 10, in the element loading step S15, a plurality of elements 20 formed in advance in the R-chamfering step S12 as described above are loaded into the reaction vessel 81 .
  • the polymer charging step S16 is performed.
  • polyvinylpyrrolidone is charged as the polymer 84 into the reaction vessel 81 .
  • the polymer 84 put into the reaction vessel 81 is adsorbed on the outer surface 21 of the element body 20 .
  • a metal alkoxide introduction step S17 is performed.
  • liquid tetraethyl orthosilicate is charged into the reaction vessel 81 as the metal alkoxide 85 .
  • Tetraethyl orthotetrasilicate is sometimes called tetraethoxysilane.
  • the amount of the metal alkoxide 85 to be introduced in the metal alkoxide introduction step S17 is calculated based on the area of the outer surface 21 of the element 20 introduced in the element introduction step S15. Specifically, it is calculated by multiplying the amount of the metal alkoxide 85 per element body 20 necessary for forming the glass film 50 covering the outer surface 21 of the element body 20 by the number of element bodies 20 . .
  • a film forming step S18 is performed.
  • stirring of the solvent 82 started in the solvent charging step S13 is continued for a predetermined time after the metal alkoxide 85 is charged into the reaction vessel 81 in the metal alkoxide charging step S17.
  • the glass film 50 is formed by a liquid phase reaction within the reaction vessel 81. As shown in FIG.
  • the drying step S19 is performed.
  • the element body 20 is taken out from the reaction vessel 81 and dried.
  • the sol-like glass film 50 is dried and becomes a gel-like glass film 50 .
  • the conductor coating step S20 is performed.
  • two portions of the surface of the glass film 50, a portion including a portion covering the first end surface 22A of the element body 20 and a portion including a portion covering the second end surface 22B of the element body 20, are coated.
  • the curing step S21 is performed. Specifically, in the curing step S21, the glass film 50 and the element body 20 to which the conductor paste is applied are heated. As a result, the water and the polymer 84 are vaporized from the gel-like glass film 50, and as shown in FIG. 3, the glass film 50 covering the outer surface 21 of the element body 20 is baked and hardened. At the same time, the first base electrode 61A and the second base electrode 62A are formed by baking the conductor paste applied in the conductor applying step S20. Further, by heating the conductor paste, a low-melting-point substance among the materials constituting the glass in the conductor paste diffuses toward the gel-like glass film 50 side.
  • the portion of the glass film 50 covered with the first base electrode 61A and the portion covered with the second base electrode 62A are thicker than the uncovered portion AU. Furthermore, the glass low-melting-point substance in the conductor paste overflows the boundary between the glass film 50 and the conductor paste, reaching the boundary AB. Since the boundary portion AB is not covered with the first base electrode 61A, the boundary portion AB containing the diffused low-melting-point substance becomes thicker and is fired in that state. As a result, the thickness of the border point AB is greater than the thickness of the coated point AC. In this manner, the base electrode forming process is composed of the conductor coating process S20 and the curing process S21. Thus, in this embodiment, the hardening step S21 serves not only as a step of hardening the glass film 50 but also as a step of sintering the base electrode.
  • the first base electrode 61A containing silver The palladium contained on the first internal electrode 41 side is attracted.
  • the first penetrating portion 71 extends through the glass film 50 from the first internal electrode 41 toward the first base electrode 61A, thereby connecting the first internal electrode 41 and the first base electrode 61A.
  • the second through portion 72 that connects the second internal electrode 42 and the second base electrode 62A.
  • the plating step S22 is performed. Electroplating is performed on the portions of the first base electrode 61A and the second base electrode 62A. Specifically, barrel plating is performed. In the barrel plating, the element body 20 provided with the first base electrode 61A and the second base electrode 62A and the media are placed in a barrel and stirred. Thereby, the first metal layer 61B is formed on the surface of the first base electrode 61A. Along with this, the medium collides with the uncovered portion AU of the glass film 50, and the surface of the glass film 50 at the uncovered portion AU is scraped. Therefore, the thickness of the uncovered portion AU is reduced. Moreover, the unevenness of the surface of the uncoated portion AU becomes flatter than the state before the barrel plating.
  • the medium does not collide with the boundary part AB of the glass film 50 because the first metal layer 61B interferes with it. Therefore, the thickness of the boundary portion AB is greater than the thickness of the uncovered portion AU. Furthermore, the thickness of the border point AB remains greater than the thickness of the coated point AC.
  • a second metal layer 62B is also formed on the surface of the second base electrode 62A. Although not shown, the first metal layer 61B and the second metal layer 62B are electroplated with two kinds of nickel and tin to form a two-layer structure. Thus, the electronic component 10 is formed.
  • part of the outer edge of the first metal layer 61B directly covers the glass film 50 .
  • the first metal layer 61B has lower adhesion to the glass film 50 than the first base electrode 61A containing glass. Therefore, moisture may enter between the outer edge of the first metal layer 61B and the glass film 50, and the glass film 50 may be exposed to moisture for a long time.
  • the portion of the glass film 50 that is likely to be directly covered with the first metal layer 61B, that is, the boundary portion AB has a greater thickness than the uncovered portion AU.
  • the first metal layer 61B has been described as an example, the same applies to the second metal layer 62B.
  • the thickness of the boundary point AB is greater than the thickness of the covered point AC. That is, the thickness of the covered portion AC is smaller than the thickness of the boundary portion AB.
  • the thickness of the uncovered portion AU which is the smallest among the covered portion AC, the boundary portion AB, and the uncovered portion AU, is 30 nm or more. Therefore, it is possible to ensure a sufficient thickness to protect the base body 20 at the portion not covered with the first base electrode 61A.
  • the thickness of the boundary point AB which is the thickest among the covered point AC, the boundary point AB, and the uncovered point AU, is 1000 nm or less. Therefore, it is possible to prevent the electronic component 10 from becoming large as a whole due to the excessively large thickness of the boundary portion AB.
  • the first base electrode 61A and the second base electrode 62A have numerous pores P. Further, during and after the manufacturing process of the electronic component 10, fine cracks may occur in the first base electrode 61A and the second base electrode 62A. Therefore, depending on the environment in which the electronic component 10 is used, moisture adhering to the electronic component 10 may enter the pores P and cracks. Furthermore, if the pores P and the cracks reach the glass film 50 , moisture present inside the pores P and the cracks will come into contact with the glass film 50 . If a fine crack occurs in the glass film 50, moisture may reach the element body 20 through the crack.
  • the thickness of the covered portion AC is greater than the thickness of the uncovered portion AU. Therefore, even if moisture or the like reaches the boundary between the glass film 50 and each base electrode depending on the environment in which the electronic component 10 is used, the moisture or the like may be absorbed into the base body by the thickness of the coated portion AC of the glass film 50, which is large. Reaching 20 can be suppressed. Note that since the uncovered portion AU of the glass film 50 is not covered with the first external electrode 61, even if moisture adheres, it volatilizes into the atmosphere. In other words, it is unlikely that the uncovered portion AU will continue to be exposed to moisture for a long period of time. Therefore, even if the thickness of the uncovered portion AU of the glass film 50 is relatively small, it is possible to sufficiently prevent moisture or the like from reaching the element body 20 .
  • the variation coefficient of the thickness of the covered portion AC is larger than the variation coefficient of the thickness of the uncovered portion AU.
  • the covered portion AC of the glass film 50 has a rougher surface than the uncovered portion AU. Therefore, the adhesion to each base electrode can be enhanced at the covered portion AC. As a result, it becomes easier to prevent moisture or the like from accumulating between each underlying electrode and the glass film 50 .
  • each base electrode contains glass. Therefore, as in the manufacturing method of the embodiment, when the glass in the conductive paste is melted in forming each base electrode, the low-melting-point substance of the glass diffuses into the glass film 50 . This makes it easy to increase the thickness of the covered portion AC.
  • each base electrode is a sintered body containing silver.
  • the sintered body has a large number of pores P that are hollow inside. Therefore, moisture and gas tend to accumulate inside the pores P of the base electrode, which is a sintered body. Therefore, there is a high possibility that moisture will accumulate at the boundary between the underlying electrode and the glass film 50 .
  • the outer surface 21 of the element body 20 is all covered with the glass film 50, the first base electrode 61A, or the second base electrode 62A. Therefore, it is possible to prevent moisture and gas from entering the element body 20 from the outside of the electronic component 10 over the entire area of the outer surface 21 .
  • the electronic component 10 is not limited to the negative characteristic thermistor component.
  • the electronic component 10 may be a thermistor component other than a negative characteristic component, a multilayer capacitor component, or an inductor component.
  • the shape of the base body 20 is not limited to the example of the above embodiment.
  • the base body 20 may have a polygonal columnar shape other than a quadrangular columnar shape having the central axis CA.
  • the element body 20 may be the core of a wire-wound inductor component.
  • the core may be in the shape of a so-called drum core.
  • the core may have a columnar winding core and flanges provided at each end of the winding core.
  • the material of the element body 20 is not limited to the example of the above embodiment.
  • the material of the base body 20 may be a composite of resin and metal powder.
  • the outer surface 21 of the element body 20 may not have the boundary surfaces 23 and the corner surfaces 24 . If the boundary between adjacent flat surfaces 22 of the outer surface 21 of the body 20 is not chamfered, there is no curved surface at the boundary. Therefore, in such cases, the boundary surface 23 and the corner surface 24 may not exist.
  • the outer surface 21 of the base body 20 may have a portion that is not covered with the glass film 50, the first base electrode 61A, or the second base electrode 62A.
  • part of the side surface 22 ⁇ /b>C may not be covered with the glass film 50 and may be covered with an insulating resin or the like different from the glass film 50 .
  • an insulating resin a colored resin or the like for optically identifying the orientation of the element body 20 can be used.
  • the shape of the first internal electrode 41 and the second internal electrode 42 does not matter as long as it can ensure electrical continuity with the corresponding first external electrode 61 and second external electrode 62 .
  • the number of the first internal electrodes 41 and the number of the second internal electrodes 42 is not limited, and the number of internal electrodes may be one, or three or more.
  • the first metal layer 61B does not have to have a two-layer structure.
  • the first metal layer 61B may consist of only one layer of a nickel layer or a tin layer, or may have a structure of three or more layers. In this respect, the same applies to the second metal layer 62B.
  • the manufacturing method of the first metal layer 61B and the second metal layer 62B is not limited to barrel plating.
  • the first metal layer 61B and the second metal layer 62B may be manufactured by electroless plating.
  • the first metal layer 61B and the second metal layer 62B may be manufactured by a method other than plating.
  • the material of the first base electrode 61A is not limited to the example of the above embodiment.
  • the material of the first base electrode 61A may be copper or gold.
  • the material of the first base electrode 61A does not have to contain glass.
  • the material of the first base electrode 61A may be made only of metal.
  • the first base electrode 61A does not have to be a sintered body.
  • the first base electrode 61A may be single crystal.
  • the combination of materials of the first internal electrode 41 and the first base electrode 61A is not limited to the combination of palladium and silver.
  • it may be a combination of copper and nickel, copper and silver, silver and gold, nickel and cobalt, or nickel and gold.
  • one may be silver and the other may be a combination of silver and palladium.
  • one may be palladium and the other may be a combination of silver and palladium, or one may be copper and the other may be a combination of silver and palladium.
  • one may be gold and the other may be a combination of silver and palladium.
  • the Kirkendall effect may not be obtained depending on the combination of the first internal electrode 41 and the first base electrode 61A.
  • the first end face 22A side of the base body 20 is polished to physically remove a portion of the glass film 50 so that the first internal electrodes 41 are exposed. do it.
  • the first internal electrode 41 and the first base electrode 61A can be connected.
  • the glass film 50 including the surface of the first base electrode 61A may be formed, and the glass film 50 covering the surface of the first base electrode 61A may be removed.
  • the arrangement location of the first external electrode 61 is not limited to the example of the above embodiment.
  • the first external electrode 61 may be arranged only on the first end surface 22A and one side surface 22C. In this regard, the same applies to the second external electrode 62 as well.
  • At least one of the thickness of the boundary point AB on the first external electrode 61 side and the thickness of the boundary point AB on the second external electrode 62 side of the glass film 50 is greater than the thickness of the uncovered point AU. Just do it.
  • the thickness of the boundary portion AB should be greater than the thickness of the uncovered portion AU, and the thickness of the covered portion AC may be less than or equal to the thickness of the uncovered portion AU. Also, the thickness of the covered portion AC may be greater than or equal to the thickness of the boundary portion AB. Furthermore, the thickness of the border point AB may be greater than 1000 nm and the thickness of the uncovered point AU may be less than 30 nm.
  • the coefficient of variation of the thickness of the covered portion AC may be less than or equal to the coefficient of variation of the thickness of the uncovered portion AU.
  • the coefficient of variation of the thickness of the covered portion AC may be less than or equal to the coefficient of variation of the thickness of the uncovered portion AU.
  • a pure glass layer 151 is laminated on the outer surface 21 at the covered portion AC.
  • the materials of the first base electrode 61A are silver and glass.
  • the glass of the first base electrode 61A contains alkali metals and alkaline earth metals as additives.
  • the pure glass layer 151 does not contain the metal component of the first base electrode 61A. Therefore, in this modification, the pure glass layer 151 does not contain silver, alkali metals and alkaline earth metals.
  • the pure glass layer 151 is made only of silicon dioxide.
  • the minimum thickness of the covered portion AC of the glass film 150 is 10 nm or more. In addition, the minimum thickness is calculated as follows.
  • a cross section perpendicular to the first end surface 22A and one side surface 22C is photographed with an electron microscope.
  • the portion where the thickness of the glass film 150 is the smallest is specified.
  • the thickness of the identified portion is measured on the image. The thickness thus measured is the minimum thickness of the coated portion AC of the glass film 150 .
  • the entire glass film contains the metal component of the first base electrode 61A.
  • the metal component in the glass film penetrates inside the outer surface 21 of the element body 20 .
  • the metal component contained in the glass film is silver and the element body 20 contains manganese is taken as an example.
  • the crystal structure in the vicinity of the outer surface 21 of the element body 20 changes from a state composed of manganese and oxygen to a state in which silver is also added. Therefore, the silver that has entered the element body 20 is restrained by the element body 20 . Since silver is diffused in the glass film, the silver that has entered the element body 20 is connected to the silver in the conductive paste through the silver in the glass film.
  • the silver in the conductive paste is also constrained to the element body 20 side through the silver in the glass film. As a result, the silver in the conductor paste becomes less likely to collect in the curing step S21. If the silver in the conductor paste is difficult to collect, there is a risk that the sintering time will become longer.
  • the pure glass layer 151 does not contain the metal component of the first base electrode 61A.
  • silver does not enter the vicinity of the outer surface 21 inside the base body 20 . Therefore, in the curing step S21 of the manufacturing process, even if the silver that forms the first base electrode 61A diffuses into the glass film 150, the above-described layer having a crystal structure in which silver enters the element body 20 prevents the silver from entering the element body 20 side. not be constrained. Therefore, as described above, silver in the conductive paste does not become difficult to move due to the layer. Therefore, it is possible to prevent the sintering from becoming difficult due to the silver in the conductive paste becoming difficult to collect, thereby preventing the sintering time from becoming excessively long.
  • the pure glass layer 151 is made only of silicon dioxide. Therefore, even if the first base electrode 61 ⁇ /b>A contains an additive, it is possible to prevent excessive diffusion of alkali metals and alkaline earth metals, which are components of the additive, into the glass film 150 .
  • the minimum thickness of the coated portion AC of the glass film 150 is 10 nm or more. Therefore, even if a suitable amount of the metal component contained in the conductive paste diffuses into the glass film 150 in the curing step S21 of the manufacturing process, the part on the outer surface 21 side does not contain the metal component. A pure glass layer 151 is present. Therefore, it becomes easier to stably manufacture the pure glass layer 151 .
  • the minimum thickness of the covered portion AC of the glass film 150 may be less than 10 nm.
  • the pure glass layer 151 is not limited to silicon dioxide.
  • the pure glass layer 151 may be composed only of boron oxide.
  • the glass film 150 may be composed only of the pure glass layer 151.

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WO2025169709A1 (ja) * 2024-02-05 2025-08-14 株式会社村田製作所 電子部品

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JP2002170736A (ja) * 2000-11-29 2002-06-14 Kyocera Corp 積層型電子部品およびその製法
JP2013197586A (ja) * 2012-03-20 2013-09-30 Samsung Electro-Mechanics Co Ltd 積層セラミック電子部品及びその製造方法
JP2017204565A (ja) * 2016-05-11 2017-11-16 Tdk株式会社 積層コイル部品
US20200105478A1 (en) * 2018-09-06 2020-04-02 Samsung Electro-Mechanics Co., Ltd. Ceramic electronic component
JP2022085818A (ja) * 2020-11-27 2022-06-08 サムソン エレクトロ－メカニックス カンパニーリミテッド． 積層型キャパシター

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JP3555563B2 (ja) * 1999-08-27 2004-08-18 株式会社村田製作所 積層チップバリスタの製造方法および積層チップバリスタ
JP2004311676A (ja) 2003-04-07 2004-11-04 Murata Mfg Co Ltd チップ状積層セラミック電子部品の製造方法およびチップ状積層セラミック電子部品

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JP2002170736A (ja) * 2000-11-29 2002-06-14 Kyocera Corp 積層型電子部品およびその製法
JP2013197586A (ja) * 2012-03-20 2013-09-30 Samsung Electro-Mechanics Co Ltd 積層セラミック電子部品及びその製造方法
JP2017204565A (ja) * 2016-05-11 2017-11-16 Tdk株式会社 積層コイル部品
US20200105478A1 (en) * 2018-09-06 2020-04-02 Samsung Electro-Mechanics Co., Ltd. Ceramic electronic component
JP2022085818A (ja) * 2020-11-27 2022-06-08 サムソン エレクトロ－メカニックス カンパニーリミテッド． 積層型キャパシター

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Publication number Priority date Publication date Assignee Title
WO2025169709A1 (ja) * 2024-02-05 2025-08-14 株式会社村田製作所 電子部品

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