WO2023080206A1

WO2023080206A1 - Pitch conversion unit and method for manufacturing same

Info

Publication number: WO2023080206A1
Application number: PCT/JP2022/041213
Authority: WO
Inventors: 滋樹坂井; 賀津雄木村; 正展八木
Original assignee: ニデックアドバンステクノロジー株式会社
Priority date: 2021-11-08
Filing date: 2022-11-04
Publication date: 2023-05-11
Also published as: KR20240110589A; CN118202252A; JPWO2023080206A1; TW202326148A

Abstract

Provided is a pitch conversion unit for converting the pitch of a plurality of contact-terminal-side electrodes to the pitch of a plurality of device-side electrodes, the pitch conversion unit being configured such that the joining strength between an electroconductive layer and an electroconductive via penetrating through an insulation layer in a thickness direction can be improved. This pitch conversion unit 1 has: a plurality of resin layers 12 laminated in a thickness direction; a plurality of penetrating electroconductive bodies 33 that penetrate through the resin layers 12 in the thickness direction; a pair of electroconductive layers 36 positioned on facing sides of two resin layers 12 that are adjacent in the thickness direction, the electroconductive layers 36 being electrically connected to the penetrating electroconductive bodies 33 that penetrate through each of the two adjacent resin layers in the thickness direction, among the plurality of penetrating electroconductive bodies 33; an insulation layer 13 positioned between the pair of electroconductive layers 36; and an electroconductive via 34 penetrating through the insulation layer 13 in the thickness direction, end sections of the electroconductive via 34 being joined to the pair of electroconductive layers 36. One of the pair of electroconductive layers 36 has, in at least one section of the portion joined to the electroconductive via 34, a recess 40 that is sunken in the thickness direction.

Description

Pitch conversion unit and manufacturing method thereof

The present invention relates to a pitch conversion unit and its manufacturing method.

It has a plurality of contact terminal-side electrodes electrically connected to a plurality of contact terminals for transmitting and receiving electric signals to and from an inspection point to be inspected, and a plurality of device-side electrodes electrically connected to an inspection device. , a pitch conversion unit for converting the pitch of the plurality of contact terminal side electrodes into the pitch of the plurality of device side electrodes. As such a pitch conversion unit, for example, a space transformer including a ceramic substrate, a wiring layer, and a thin film layer is known, as disclosed in Patent Document 1.

The ceramic substrate includes at least one wiring layer inside the ceramic substrate. A conductive path is provided in the ceramic substrate so as to penetrate the wiring layer in the ceramic substrate. Wiring layers connected to the conductive path are provided on one surface and the opposite surface of the ceramic substrate.

The wiring layer located on one surface of the ceramic substrate has a wiring pattern corresponding to the arrangement pattern of the probes. The wiring layer located on the opposite side of the ceramic substrate is connected to the printed circuit board via an extendable pogo pin unit. The printed circuit board has printed wiring that can be connected to test circuitry on the inspection machine.

JP 2019-178961 A

In the space transformer disclosed in the above-mentioned Patent Document 1, it is necessary to form a conductive path or the like that penetrates the ceramic substrate in the thickness direction and electrically connects the wiring layers. Such a conductive path is generally formed by forming a via hole in the substrate in the thickness direction and filling the via hole with a conductive material to electrically connect the conductive layer constituting the wiring layer. Methods are known for forming conductive vias connected to the .

By the way, generally, when forming the via holes in an insulating layer such as a substrate, the conductive layer is exposed by processing a part of the insulating layer using a laser beam or the like. form a hole. In this case, part of the insulating layer may remain on the bottom surface of the hole formed by the laser beam. That is, the conductive layer may not be exposed at the bottom surface of the via hole. In such a case, there is a possibility that sufficient bonding strength cannot be obtained between the conductive via formed by filling the via hole with a conductive material and the conductive layer.

An object of the present invention is to improve the bonding strength between a conductive via penetrating an insulating layer in the thickness direction and a conductive layer in a pitch conversion unit that converts the pitch of a plurality of contact terminal side electrodes to the pitch of a plurality of device side electrodes. It is to provide a possible configuration.

A pitch conversion unit according to an embodiment of the present invention includes: a plurality of contact terminal side electrodes electrically connected to a plurality of contact terminals for transmitting and receiving electric signals to and from an inspection point to be inspected; and a plurality of device-side electrodes connected to each other, the pitch conversion unit converting the pitch of the plurality of contact terminal-side electrodes into the pitch of the plurality of device-side electrodes. This pitch conversion unit includes: a plurality of resin layers laminated in a thickness direction; a plurality of through conductors penetrating through at least one resin layer among the plurality of resin layers in the thickness direction; The through conductor located on the opposite side to the two resin layers adjacent in the thickness direction among the plurality of through conductors and penetrating the two adjacent resin layers in the thickness direction respectively. a pair of conductive layers to be connected; an insulating layer positioned between the pair of conductive layers; and a via. One conductive layer of the pair of conductive layers has a recess recessed in the thickness direction in at least a portion of a joint portion with the conductive via.

A method of manufacturing a pitch conversion unit according to an embodiment of the present invention is a method of manufacturing a pitch conversion unit having the above configuration. This manufacturing method includes a via hole forming step of forming a via hole forming a part of the conductive via in the insulating layer, and a step of forming the via hole in the insulating layer; a recess forming step of forming the recess in a portion of the conductive layer overlapping the via hole; and a conductive via forming the conductive via by filling a conductive material in the via hole. and a forming step.

According to the pitch conversion unit according to one embodiment of the present invention, in the pitch conversion unit for converting the pitch of the plurality of contact terminal side electrodes to the pitch of the plurality of device side electrodes, the conductive vias penetrating the insulating layer in the thickness direction It is possible to realize a configuration capable of improving the bonding strength between the substrate and the conductive layer.

FIG. 1 is a conceptual diagram showing a schematic configuration of a semiconductor inspection device provided with a pitch conversion unit according to an embodiment. FIG. 2 is a partial cross-sectional view showing the schematic configuration of the inspection unit and showing the inspection jig in cross section. FIG. 3 is a cross-sectional view schematically showing an example of the configuration of the pitch conversion unit. 4A is a partially enlarged sectional view showing an enlarged part of the pitch conversion unit shown in FIG. 3. FIG. FIG. 4B is an enlarged portion showing a part of the pitch conversion unit, in which the conductive layer is formed with a concave portion forming a cylindrical space whose bottom radius is smaller than the radius of the opening formed in the conductive layer; It is an expanded sectional view. FIG. 5 is a cross-sectional view showing an example of a method of manufacturing the pitch conversion unit. FIG. 6 is a cross-sectional view showing an example of a method of manufacturing the pitch conversion unit. FIG. 7 is a cross-sectional view showing an example of a method of manufacturing the pitch conversion unit. FIG. 8 is a cross-sectional view showing an example of a method of manufacturing the pitch conversion unit. FIG. 9 is a cross-sectional view showing an example of a method of manufacturing the pitch conversion unit. FIG. 10 is a cross-sectional view showing an example of a method of manufacturing the pitch conversion unit.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The same or corresponding parts in the drawings are denoted by the same reference numerals, and the description thereof will not be repeated. Also, the dimensions of the constituent members in each drawing do not faithfully represent the actual dimensions of the constituent members, the dimensional ratios of the respective constituent members, and the like.

In the following description, expressions such as "fixed", "connected", and "attached" (hereinafter referred to as "fixed") are used not only when members are directly fixed to each other, but also when other members are used. It also includes cases where it is fixed. That is, in the following description, expressions such as fixing include meanings such as direct and indirect fixing between members.

The pitch conversion unit according to the present invention can be used in an inspection device that electrically inspects an object to be inspected by bringing a probe into contact with the object to be inspected and causing a current to flow. In the embodiments described below, a semiconductor inspection apparatus for electrically inspecting a semiconductor wafer to be inspected will be described as an example.

(Semiconductor inspection equipment)
FIG. 1 is a perspective view showing a schematic configuration of a semiconductor inspection apparatus 100 having a pitch conversion unit 1 according to an embodiment of the invention. A semiconductor inspection apparatus 100 is an inspection apparatus for inspecting a circuit formed on a semiconductor wafer DUT, which is an example of an object to be inspected.

In the semiconductor wafer DUT, circuits corresponding to a plurality of semiconductor chips are formed on a semiconductor substrate such as silicon. The inspection target is, for example, an electronic component such as a semiconductor chip, a CSP (Chip size package), or a semiconductor element (IC: Integrated Circuit).

　The semiconductor inspection apparatus 100 shown in FIG.

The sample table 106 has a mounting portion 106a on which the semiconductor wafer DUT is mounted on its upper surface. The sample table 106 can fix the semiconductor wafer DUT to be inspected at a predetermined position. The mounting portion 106a can be raised and lowered. Specifically, the mounting section 106 a can raise the semiconductor wafer DUT accommodated in the sample stage 106 to the inspection position, and store the inspected semiconductor wafer DUT in the sample stage 106 . Further, the mounting section 106a can rotate the semiconductor wafer DUT, for example, to orient the orientation flat in a predetermined direction.

Although not shown, the inspection processing unit 108 has, for example, a power supply circuit, a voltage source, an ammeter, a microcomputer, and the like. The inspection processing unit 108 moves and positions the inspection unit 104 by controlling a driving mechanism (not shown), and brings each probe 121 of the inspection unit 104 into contact with each inspection point of the semiconductor wafer DUT. Thereby, each inspection point and the inspection section 104 are electrically connected.

The inspection processing unit 108 supplies an alternating current or voltage for inspection to each inspection point of the semiconductor wafer DUT via each probe 121 in the above-described state, and the voltage signal or current signal obtained from each probe 121 Based on this, the semiconductor wafer DUT is inspected for, for example, circuit pattern breaks and short circuits. The test processing unit 108 may measure the impedance of the test object based on the voltage signal or current signal obtained from each probe 121 by supplying alternating current or voltage to each test point.

(Inspection unit)
FIG. 2 is a partial cross-sectional view showing a schematic configuration of the inspection unit 104. As shown in FIG. In FIG. 2, the inspection jig 2 of the inspection unit 104 is shown in cross section for explanation. Note that the configuration shown in FIG. 2 is an example of the inspection unit 104 . The configuration of the inspection unit 104 is not limited to the configuration shown in FIG.

The inspection unit 104 has an inspection jig 2 and a connection plate 3 . The inspection jig 2 is a jig for inspecting the semiconductor wafer DUT by bringing a plurality of probes 121 into contact therewith. The inspection unit 104 is, for example, a so-called probe card.

The inspection jig 2 has a pitch conversion unit 1, a plurality of probes 121 (contact terminals), and a penetrating member 122 that holds the plurality of probes 121 with their tips directed toward the semiconductor wafer DUT.

A plurality of chips are formed on the semiconductor wafer DUT. A plurality of pads, bumps, and the like are formed on each chip. The plurality of pads, bumps, etc. are set as inspection points. The inspection jig 2 includes a plurality of probes 121 corresponding to inspection points within a partial area (for example, the hatched area in FIG. 1, hereinafter referred to as an inspection area) of the plurality of chips formed on the semiconductor wafer DUT. have The probe 121 penetrates through the penetrating member 122 . Since the structures of the probe 121 and the penetrating member 122 are the same as those of the conventional art, detailed description thereof will be omitted.

The connection plate 3 is detachable with the pitch conversion unit 1 . The connection plate 3 has a plurality of electrodes (not shown) electrically connected to the pitch conversion unit 1 . Each electrode of the connection plate 3 is electrically connected to the inspection processing section 108 by, for example, a cable 131, a connection terminal 132, and the like.

The pitch conversion unit 1 is a pitch conversion member for converting the spacing between the probes 121 to the electrode pitch of the connection plate 3 . The pitch conversion unit 1 has, on one surface, a plurality of contact terminal side electrodes 21 that are in contact with and conduct with a plurality of probes 121 of the inspection jig 2 . The pitch conversion unit 1 has a plurality of device-side electrodes 22 on the other surface that are electrically connected to electrodes (not shown) of the connection plate 3 via the connection member 4 . A detailed configuration of the pitch conversion unit 1 will be described later.

The connection member 4 is positioned between the device-side electrode 22 of the pitch conversion unit 1 and the electrode of the connection plate 3 and is in elastic contact with both. The connection member 4 electrically connects the device-side electrode 22 of the pitch conversion unit 1 and the electrode of the connection plate 3 . The connection member 4 is a so-called pogo pin unit.

From the viewpoint of facilitating understanding of the invention, FIG. 1 is an explanatory diagram schematically and conceptually showing an example of the configuration of the semiconductor inspection apparatus 100, and FIG. It is an explanatory view schematically and conceptually shown. In FIGS. 1 and 2, the number, density and arrangement of the probes 121, the shape of the inspection section 104, the size ratio, etc. are also illustrated in a simplified and conceptualized manner. In addition, in FIG. 1, for example, from the viewpoint of facilitating understanding of the arrangement of the probes 121, the inspection area is emphasized more than that of a general semiconductor inspection apparatus. The inspection area may be smaller than the area shown in FIG. 1 or larger than the area shown in FIG.

(pitch conversion unit)
Next, the configuration of the pitch conversion unit 1 will be described with reference to FIGS. 2 to 4A. FIG. 3 is a cross-sectional view schematically showing the configuration of the pitch conversion unit 1. As shown in FIG. FIG. 4A is a partially enlarged sectional view showing an enlarged part of the pitch conversion unit 1. FIG.

As shown in FIGS. 2 and 3, the pitch conversion unit 1 has a substrate 11 made of resin, a contact terminal side electrode 21, a device side electrode 22, and a conductor 31 positioned inside the substrate 11.

The substrate 11 has multiple resin layers 12 and multiple insulating layers 13 . The resin layer 12 is made of epoxy resin such as prepreg, polyimide resin, or the like. The insulating layer 13 is made of, for example, a prepreg, a bonding sheet, or the like. For example, the multiple resin layers 12 and the multiple insulating layers 13 are laminated in the thickness direction. More specifically, as shown in FIG. 3, insulating layers 13 are positioned between resin blocks B composed of a plurality of resin layers 12 laminated in the thickness direction.

Although details will be described later, each resin block B is formed by laminating a plurality of resin layers 12 . The resin blocks B are bonded to each other via the insulating layer 13 .

Inside the resin layer 12 forming each resin block B and inside the insulating layer 13 joining the resin blocks B together, a conductor 31 having conductivity is formed. The conductor 31 includes multiple metal layers 32 , multiple through conductors 33 , and multiple conductive vias 34 .

A plurality of metal layers 32 are formed planarly along the resin layer 12 in each resin block B. In each resin block B, the plurality of through conductors 33 penetrate the resin layer 12 in the thickness direction and electrically connect the metal layers 32 in the thickness direction. That is, the metal layer 32 and the penetrating conductor 33 are electrically connected within each resin block B. As shown in FIG. The metal layer 32 and the penetrating conductor 33 are made of copper, for example. The metal layer 32 and the penetrating conductor 33 are formed by plating, for example.

The plurality of metal layers 32 have conductive layers 36 located at the ends of the resin blocks B in the stacking direction of the resin layers 12 . The conductive layer 36 is electrically connected to the penetrating conductor 33 penetrating the resin layer 12 . The surface of the conductive layer 36 located at the end of the resin block B is covered with the insulating layer 13 . Therefore, the insulating layer 13 is positioned between the conductive layers 36 positioned at the ends in the stacking direction of the adjacent resin blocks B. As shown in FIG. That is, the insulating layer 13 connects the conductive layers 36 located at the ends of the adjacent resin blocks B to each other. Note that the conductive layer 36 of the adjacent resin block B is located on the opposite side to the two resin layers 12 adjacent in the thickness direction of the conductive layer 36 among the plurality of resin layers 12, and the plurality of through conductors 33 They are a pair of conductive layers electrically connected to the penetrating conductors 33 penetrating the two adjacent resin layers 12 in the thickness direction. Thus, the insulating layer 13 is positioned between the pair of conductive layers 36 .

As shown in FIG. 4A, the conductive layer 36 has fine uneven portions 36a on the surface where the insulating layer 13 is located, that is, the surface on the insulating layer 13 side. The uneven portion 36a is formed on the surface of the conductive layer 36 on the insulating layer 13 side by texturing or the like. Since the conductive layer 36 has uneven portions 36 a on its surface, the adhesion of the insulating layer 13 to the conductive layer 36 can be improved.

As shown in FIG. 3, the through conductor 33 is also electrically connected to the contact terminal side electrode 21 formed on the surface of the pitch conversion unit 1 on the inspection jig 2 side. The penetrating conductors 33 are also electrically connected to device-side electrodes 22 formed on the surface of the pitch conversion unit 1 on the side of the inspection device, that is, on the side of the connection plate 3 .

As shown in FIGS. 3 and 4A, the conductive vias 34 are electrically connected to the conductive layers 36 of the adjacent resin blocks B through the insulating layer 13 in the thickness direction. That is, the conductive vias 34 electrically connect the conductive layers 36 of the resin blocks B adjacent to each other. As a result, the conductive layers 36 of the adjacent resin blocks B are electrically connected to form an electric circuit within the pitch conversion unit 1 .

As will be described later, the insulating layer 13 provided on one of the adjacent resin blocks B is heated and fused to the other resin block B. Thereby, the adjacent resin blocks B are integrated through the insulating layer 13 .

As shown in FIG. 4A, the conductive via 34 is positioned within the via hole 13a penetrating the insulating layer 13 in the thickness direction. The conductive vias 34 are made of a conductive paste filled in the via holes 13a. This conductive paste contains metal particles as a filler and an organic substance as a binder. The metal particles of the conductive paste contain, for example, tin. After filling the via holes 13a, the conductive paste becomes the conductive vias 34 by, for example, heat treatment.

The conductive vias 34 are joined to the conductive layers 36 of the adjacent resin blocks B. Although not shown, a reaction layer of copper and tin is formed at the junction between the conductive via 34 and the conductive layer 36 . Since the conductive via 34 and the conductive layer 36 are metal-bonded by this reaction layer, sufficient bonding strength between the conductive via 34 and the conductive layer 36 can be secured.

One conductive layer 36 of the conductive layers 36 of the adjacent resin blocks B has a concave portion 40 at the joint portion with the conductive via 34 . In this embodiment, the recess 40 has a shape in which the entire joint portion is recessed in the thickness direction of the conductive layer 36 . At least a part of the joint portion of the recess 40 may have a shape recessed in the thickness direction.

As described above, in the present embodiment, the recess 40 has a shape in which the entire joining portion of the conductive layer 36 with the conductive via 34 is recessed in the thickness direction. As a result, the conductive layer 36 can be exposed over the entire joint portion of the conductive layer 36 with the conductive via 34 . Therefore, it is possible to more reliably prevent the surface of the conductive layer 36 from being covered with an insulating layer or the like at the joint portion. Therefore, since the conductive layer 36 and the conductive via 34 can be metal-bonded more firmly at the bonding portion, the bonding strength between the conductive layer 36 and the conductive via 34 can be further improved.

The recessed portion 40 has, for example, a circular shape when the conductive layer 36 is viewed in the stacking direction of the conductive layer 36 and the insulating layer 13 . The concave portion 40 may have a shape other than a circular shape, such as an elliptical shape, a rectangular shape, or a polygonal shape, when the conductive layer 36 is viewed in the stacking direction. The concave portion 40 may have the same shape and size as the via hole portion 13a of the conductive via 34 when the conductive layer 36 is viewed in the stacking direction, or may be different from the via hole portion 13a of the conductive via 34. It may have the same shape as the via hole 13a of the conductive via 34 and may be smaller than the via hole 13a.

The recess 40 includes a bottom surface 41 and side surfaces 42 . The bottom surface 41 is, for example, a circular flat surface when the conductive layer 36 is viewed in the stacking direction. Note that the bottom surface 41 may have a shape other than a circular shape such as an elliptical shape, a rectangular shape, or a polygonal shape when the conductive layer 36 is viewed in the stacking direction. In addition, the bottom surface 41 may be a curved surface, or may have a stepped deep groove, a spiral or annular groove, unevenness, or the like. The side surface 42 extends in the direction normal to the surface of the conductive layer 36 on which the opening of the recess 40 is formed. The side surfaces 42 may extend obliquely with respect to said surface.

The recess 40 has, for example, a cylindrical or truncated conical space inside. In the example shown in FIG. 4A , the recess 40 has a cylindrical space inside, the radius of the bottom surface 41 of which is equal to the radius of the opening formed in the conductive layer 36 . As shown in FIG. 4B, the recess 140 may have a cylindrical or frusto-conical space inside, the radius of the bottom surface 141 of which is smaller than the radius of the opening formed in the conductive layer 36 . In FIG. 4B, reference numeral 142 denotes the side surface of the recess 140, and reference numeral 141a denotes the recessed portion of the bottom surface of the recess 140. As shown in FIG.

As shown in FIG. 4A , the thickness T1 of the conductive layer 36 at the bottom surface 41 of the recess 40 is smaller than the thickness of the conductive layer 36 other than the recess 40 . Specifically, the thickness T1 of the conductive layer 36 at the bottom surface 41 is smaller than the thickness T2 of the conductive layer 36 at the lowest portion of the uneven portion 36a of the conductive layer 36 . A thickness T1 of the conductive layer 36 at the bottom surface 41 is the thickness of the conductive layer 36 at a portion of the bottom surface 41 where the recess 40 has the smallest depth. As a result, the bottom surface 41 of the recess 40 is positioned inward in the thickness direction of the conductive layer 36 from the lowermost portion of the uneven portion 36a formed on the surface of the conductive layer 36 on the insulating layer 13 side. The lowermost portion is a concave portion positioned most inward in the thickness direction of the uneven portion 36 a in the thickness direction of the conductive layer 36 .

As described above, in the present embodiment, the conductive layer 36 has the uneven portion 36 a on the surface located on the insulating layer 13 side for improving the adhesion with the insulating layer 13 . The bottom surface 41 of the concave portion 40 is located inside the conductive layer 36 in the thickness direction of the lowermost portion of the concave/convex portion 36a.

As a result, since the insulating layer 13 adhering to the irregularities 36 a on the surface of the recess 40 of the conductive layer 36 is removed, the conductive layer 36 can be exposed on the bottom surface 41 of the recess 40 . Therefore, since the conductive layer 36 and the conductive via 34 can be metal-bonded more firmly in the concave portion 40, the bonding strength between the conductive layer 36 and the conductive via 34 can be further improved.

The bottom surface 41 has a bottom recessed portion 41a in the central portion when the conductive layer 36 is viewed in the stacking direction. The bottom recessed portion 41 a is recessed in the thickness direction of the conductive layer 36 compared to other portions of the bottom surface 41 . That is, the recessed portion 40 has a bottom recessed portion 41 a that is recessed in the thickness direction more than other portions of the recessed portion 40 on the bottom surface 41 . The amount of depression of the bottom surface depression portion 41 a is the largest at the central portion of the bottom surface 41 when the conductive layer 36 is viewed in the stacking direction, and decreases toward the outer periphery of the bottom surface 41 . As a result, the thickness T3 of the conductive layer 36 at the central position of the bottom surface 41 as viewed in the stacking direction of the conductive layer 36 is the smallest among the thicknesses of the conductive layer 36 in the recess 40 .

As a result, when the conductive vias 34 are formed by filling the via holes 13a of the insulating layer 13 with a metal paste or the like, the metal paste enters the bottom recessed portions 41a of the recesses 40 of the conductive layer 36. . Therefore, the conductive via 34 can be more strongly bonded to the bottom surface 41 of the conductive layer 36 . Further, since the bottom surface 41 has the bottom recessed portion 41a, the metal paste can be easily filled in the bottom recessed portion 41a. Therefore, with the above configuration, the conductive via 34 that is more strongly bonded to the bottom surface 41 of the conductive layer 36 can be easily formed.

The bottom recessed portion 41a is located in the central portion of the joint portion of the conductive layer 36 with the conductive via 34 when the conductive layer 36 is viewed in the stacking direction. As a result, when filling the conductive paste into the recess 40 of the conductive layer 36, the metal paste can be easily filled into the bottom recessed portion 41a. Therefore, the above configuration makes it possible to more easily form the conductive via 34 that is more strongly bonded to the bottom surface 41 of the conductive layer 36 .

A side surface 42 of the recess 40 is a cylindrical surface in which the opening side of the recess 40 coincides with the bottom surface 41 when the conductive layer 36 is viewed in the stacking direction. The side surface 42 has, for example, an annular shape when viewed in the stacking direction of the resin layers 12 . Note that the side surface 42 may have a shape other than an annular shape, such as an elliptical annular shape, a rectangular annular shape, or a polygonal annular shape when viewed in the stacking direction of the resin layers 12 .

In the present embodiment, the pitch conversion unit 1 includes a plurality of contact terminal side electrodes 21 electrically connected to a plurality of probes 121 that transmit and receive electrical signals to and from an inspection point to be inspected, and a semiconductor inspection device 100 that is electrically connected to the semiconductor inspection device 100 . It is a pitch conversion unit that has a plurality of device-side electrodes 22 that are physically connected, and converts the pitch of the plurality of contact terminal-side electrodes 21 into the pitch of the plurality of device-side electrodes. The pitch conversion unit 1 includes a plurality of resin layers 12 laminated in the thickness direction, a plurality of through conductors 33 penetrating at least one resin layer 12 of the plurality of resin layers 12 in the thickness direction, and a plurality of resin layers 12 . A penetrating conductor located on the opposite side of two resin layers 12 adjacent in the thickness direction among the layers 12 and penetrating the two adjacent resin layers 12 among the plurality of penetrating conductors 33 in the thickness direction. A pair of conductive layers 36 electrically connected to the body 33, an insulating layer 13 positioned between the pair of conductive layers 36, and a pair of conductive layers penetrating through the insulating layer 13 in the thickness direction. and a conductive via 34 that is bonded to the layer 36 . One conductive layer 36 of the pair of conductive layers 36 has a recess 40 recessed in the thickness direction in at least a part of the joint portion with the conductive via 34 .

As a result, the conductive layer 36 can be exposed in the portion where the concave portion 40 is formed in the joint portion of the conductive layer 36 with the conductive via 34 . Therefore, it is possible to prevent the surface of the conductive layer 36 from being covered with the insulating layer 13 or the like in the concave portion 40 . Therefore, since the conductive layer 36 and the conductive via 34 can be metal-bonded within the recess 40, the bonding strength between the conductive layer 36 and the conductive via 34 can be improved.

(Manufacturing method of pitch conversion unit)
Next, a method of manufacturing the pitch conversion unit 1 having the above configuration will be described with reference to FIGS.

First, as shown in FIG. 5, a plurality of resin blocks B constituting the pitch conversion unit 1 are formed. Resin block B has a plurality of resin layers 12 , a plurality of metal layers 32 , and a plurality of through conductors 33 . Therefore, when forming the resin block B, while laminating the plurality of resin layers 12 in the thickness direction, the plurality of metal layers 32 are formed between the resin layers 12, and the resin layers 12 are penetrated in the thickness direction. to form a plurality of through conductors 33 bonded to the metal layer 32 . The method of forming the resin layer 12, the metal layer 32 and the penetrating conductor 33 in the resin block B is the same as the conventional method, so detailed description thereof will be omitted.

Among the plurality of resin blocks B formed as described above, the conductive layer 36, which is part of the metal layer 32, is exposed on the joint side of the resin block B that is joined as described later. The contact terminal side electrode 21 is exposed to the resin block B positioned at one end in the stacking direction among the plurality of resin blocks B constituting the pitch conversion unit 1 . Further, the device-side electrode 22 is exposed to the resin block B positioned at the other end in the stacking direction among the plurality of resin blocks B constituting the pitch conversion unit 1 .

Although not particularly shown in the figures after FIG. 5, an uneven portion 36a is formed on the surface of the exposed portion of the conductive layer 36 in the resin block B by texturing or the like. By forming the uneven portion 36a on the surface of the exposed portion of the conductive layer 36, the adhesion of the insulating layer 13 to the conductive layer 36 is improved when the insulating layer 13 is formed on the resin block B as described later. can be done.

Next, as shown in FIG. 6, the insulating layer 13 is formed on the surface of the resin block B where the conductive layer 36 is exposed, and the PET layer 14 is formed on the insulating layer 13 . After that, as shown in FIG. 7, the portions of the insulating layer 13 and the PET layer 14 located on the conductive layer 36 are irradiated with laser light α to form the holes 15 by laser processing. Holes 15 include via holes 13 a formed in insulating layer 13 . The step of forming the via holes 13a in the insulating layer 13 is the via hole forming step. The laser light α is, for example, CO ₂ laser light or UV laser light.

Although the insulating layer 13 and the PET layer 14 are partially removed by the laser processing described above, a portion of the insulating layer 13 may remain on the bottom surface of the hole 15 . Therefore, as shown in FIG. 8, the inside of the hole 15 is irradiated with a laser beam β to partially remove the insulating layer 13 remaining at the bottom of the hole 15 . At this time, the laser beam β has a power density sufficient to partially remove the conductive layer 36 . Accordingly, recesses 40 are formed in the conductive layer 36 . The recessed portion 40 is formed in a portion of the conductive layer 36 that overlaps the via hole portion 13a when the conductive layer 36 is viewed in the stacking direction. Since the shape of the concave portion 40 is as described above, detailed description thereof will be omitted. Note that the laser beam β is, for example, a green laser beam, a UV laser beam, an excimer laser beam, or the like.

Next, after filling the holes 15 with a conductive paste, which is a conductive material, the PET layer 14 is removed. As a result, as shown in FIG. 9, a conductive via 34 is formed in which the via hole 13a of the insulating layer 13 is filled with the conductive paste. The step of forming the conductive via 34 by filling the via hole 13a with a conductive paste, which is a conductive material, is the conductive via forming step.

Then, as shown in FIG. 10, another resin block B is superimposed on the insulating layer 13, and by heating the two resin blocks B to a temperature at which the insulating layer 13 is fused, It is possible to join the resin blocks B to each other. Also, the conductive vias 34 are metal-bonded to the conductive layers 36 of the two resin blocks B, respectively.

By repeating the above steps according to the number of resin blocks B to be laminated, the pitch conversion unit 1 composed of a plurality of resin blocks B is formed.

The manufacturing method of the pitch conversion unit 1 of the present embodiment includes a via hole forming step of forming a via hole 13a constituting a part of the conductive via 34 in the insulating layer 13, and a step of forming the conductive layer 36 in the stacking direction. As can be seen, a recess forming step of forming a recess 40 in a portion of the conductive layer 36 overlapping the via hole 13a and a conductive material filling the via hole 13a with a conductive material to form the conductive via 34 are performed. and a conductive via formation step.

As a result, the via hole 13a formed in the insulating layer 13 is filled with the conductive paste to form the conductive via 34 joined to the conductive layer 36, and the conductive layer 36 is viewed in the stacking direction. Thus, the pitch conversion unit 1 is obtained in which the recesses 40 are formed in the portions of the conductive layer 36 overlapping the via holes 13a.

In the pitch conversion unit 1 formed in this manner, the conductive layer 36 can be exposed in the portion where the concave portion 40 is formed in the joint portion of the conductive layer 36 with the conductive via 34 . Therefore, it is possible to prevent the surface of the conductive layer 36 from being covered with the insulating layer 13 or the like in the concave portion 40 . Therefore, since the conductive layer 36 and the conductive via 34 can be metal-bonded within the recess 40, the bonding strength between the conductive layer 36 and the conductive via 34 can be improved.

Further, in the via recess forming step, the recess 40 is formed by irradiating a portion of the conductive layer 36 that overlaps the via hole 13a with the laser beam β when the conductive layer 36 is viewed in the stacking direction.

Thereby, the concave portion 40 can be easily formed in the conductive layer 36 in the via hole forming step. Therefore, the pitch conversion unit 1 having the configuration of this embodiment can be easily obtained.

(Other embodiments)
Although the embodiments of the present invention have been described above, the above-described embodiments are merely examples for carrying out the present invention. Therefore, without being limited to the above-described embodiment, it is possible to modify the above-described embodiment as appropriate without departing from the spirit thereof.

In the above embodiment, a semiconductor inspection device was taken as an example of an electrical inspection device. However, the pitch conversion unit is not limited to the semiconductor inspection device, and may be used, for example, in a substrate inspection device that inspects a substrate. In this case, the board to be inspected by the board inspection apparatus may be a ceramic multilayer wiring board, a glass epoxy board, a flexible board, a ceramic multilayer wiring board, a package board for a semiconductor package, an interposer board, a film carrier, or the like. It may be an electrode plate for a display such as a liquid crystal display, an EL (Electric-Luminescence) display, a touch panel display, an electrode plate for a touch panel, or the like, or it may be another type of substrate. good.

In the above embodiment, the pitch conversion unit 1 is formed by bonding a plurality of resin blocks B via the insulating layer 13 . However, the pitch conversion unit may be formed by laminating a plurality of resin layers as long as it has a configuration having conductive vias. The pitch conversion unit may include an insulating layer. In this case, the configuration of this embodiment may be applied to the junction between the conductive via and the conductive layer.

In the above embodiment, the resin block B has three resin layers 12 in the example shown in FIG. However, the insulating block may have two or less resin layers, or may have four or more resin layers. In the above embodiment, the pitch conversion unit 1 has three resin blocks B in the example shown in FIG. However, the pitch conversion unit may have two or less resin blocks, or four or more resin blocks.

In the above-described embodiments, the bottom surfaces 41 and 141 of the

recesses

40 and 140 have

bottom recess portions

41a and 141a in the central portion when the conductive layer 36 is viewed in the stacking direction. However, the bottom surface may have a recessed portion on the bottom surface other than the central portion when viewed in the stacking direction of the conductive layers. The bottom recessed portion may be provided at any position of the joint portion of the conductive layer with the conductive via when the conductive layer is viewed in the stacking direction. The bottom surface may not have a bottom surface recess. The bottom surface may have a convex portion.

In the above-described embodiment, the recess amount of the bottom recess portion 41a is the largest at the central portion of the bottom surface 41 when the conductive layer 36 is viewed in the stacking direction, and becomes smaller toward the outer peripheral side of the bottom surface 41. However, the shape of the bottom recessed portion may be any shape as long as it is recessed in the thickness direction compared to other portions of the bottom surface of the recess.

In the above embodiment, the side surface 42 of the recess 40 is a cylindrical surface in which the opening side of the recess 40 is the same as the bottom surface 41 when the conductive layer 36 is viewed in the stacking direction. However, the side surface of the recess may be a tapered surface in which the opening side of the recess is positioned radially outward or radially inward from the bottom surface when the conductive layers are viewed in the stacking direction. Moreover, the side surface of the recess may be polygonal when the conductive layers are viewed in the stacking direction. A side surface of the recess may include a plurality of flat surfaces.

In the above embodiment, the laser beam β is used when forming the recesses 40 in the conductive layer 36 . However, the recesses may be formed mechanically in the conductive layer using a tool or the like. That is, any processing method other than laser processing may be used as long as the processing method is capable of removing the insulating layer on the conductive layer and exposing the conductive layer at the bottom surface of the via hole.

In the above-described embodiment, the conductive layer 36 has fine uneven portions 36a on the surface on the insulating layer 13 side. However, the conductive layer does not have to have unevenness on the surface on the insulating layer side.

The present invention includes a plurality of contact terminal side electrodes electrically connected to a plurality of contact terminals for transmitting and receiving electric signals to and from an inspection point to be inspected, and a plurality of device side electrodes electrically connected to an inspection device. and a pitch conversion unit that converts the pitch of the plurality of contact terminal side electrodes into the pitch of the plurality of device side electrodes.

1 pitch conversion unit 2 inspection jig 3 connection plate 4 connection member 11 substrate 12 resin layer 13 insulation layer 13a via hole 14 PET layer 21 contact terminal side electrode 22 device side electrode 31 conductor 32 metal layer 33 through conductor 34 Conductive via 36 Conductive layer 36a

Uneven portions

40, 140

Concave portions

41, 141

Bottom surfaces

41a, 141a Bottom recessed

portions

42, 142 Side surface 100 Semiconductor inspection device 104 Inspection unit 106 Sample table 106a Mounting unit 108 Inspection processing unit 121 Probe 122 Penetrating member 131 cable 132 connection terminal B resin block DUT semiconductor wafer

Claims

It has a plurality of contact terminal-side electrodes electrically connected to a plurality of contact terminals for transmitting and receiving electric signals to and from an inspection point to be inspected, and a plurality of device-side electrodes electrically connected to an inspection device. , a pitch conversion unit for converting the pitch of the plurality of contact terminal side electrodes to the pitch of the plurality of device side electrodes,
a plurality of resin layers laminated in the thickness direction;
a plurality of penetrating conductors penetrating through at least one resin layer of the plurality of resin layers in the thickness direction;
A through-hole positioned on the opposite side of two resin layers adjacent in the thickness direction among the plurality of resin layers and penetrating the two adjacent resin layers among the plurality of through conductors in the thickness direction. a pair of conductive layers electrically connected to the conductor;
an insulating layer positioned between the pair of conductive layers;
a conductive via penetrating the insulating layer in the thickness direction and having ends joined to the pair of conductive layers;
has
The pitch conversion unit, wherein one of the pair of conductive layers has a recess recessed in the thickness direction in at least a part of a joint portion with the conductive via.
A pitch conversion unit according to claim 1, wherein
The recess has a shape in which the entire joint portion with the conductive via in the conductive layer is recessed in the thickness direction,
Pitch conversion unit.
A pitch conversion unit according to claim 1 or 2,
The recess has, on its bottom surface, a recessed bottom surface that is recessed in the thickness direction more than other portions of the recess,
Pitch conversion unit.
A pitch conversion unit according to claim 3, wherein
The pitch conversion unit, wherein the bottom recessed portion is positioned at a central portion of a joint portion of the conductive layer with the conductive via when the conductive layer is viewed in a stacking direction of the conductive layer and the insulating layer.
A pitch conversion unit according to any one of claims 1 to 4,
The conductive layer has an uneven portion for improving adhesion with the insulating layer on a surface located on the insulating layer side,
The pitch conversion unit, wherein the bottom surface of the concave portion is located inside the lowermost portion of the uneven portion in the thickness direction of the conductive layer.
A method for manufacturing the pitch conversion unit according to any one of claims 1 to 5,
a via hole forming step of forming a via hole forming part of the conductive via in the insulating layer;
a recess forming step of forming the recess in a portion of the conductive layer that overlaps the via hole when viewed from the direction in which the conductive layer and the insulating layer are laminated;
a conductive via forming step of forming the conductive via by filling the via hole with a conductive material;
having
A method for manufacturing a pitch conversion unit.
In the manufacturing method of the pitch conversion unit according to claim 6,
In the step of forming a recess, the recess is formed by irradiating a laser beam to a portion of the conductive layer overlapping the via hole when viewed in the stacking direction of the conductive layer, thereby forming the recess. Method.