WO2023080206A1 - Unité de conversion de pas et son procédé de fabrication - Google Patents

Unité de conversion de pas et son procédé de fabrication Download PDF

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Publication number
WO2023080206A1
WO2023080206A1 PCT/JP2022/041213 JP2022041213W WO2023080206A1 WO 2023080206 A1 WO2023080206 A1 WO 2023080206A1 JP 2022041213 W JP2022041213 W JP 2022041213W WO 2023080206 A1 WO2023080206 A1 WO 2023080206A1
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WIPO (PCT)
Prior art keywords
conductive
conversion unit
pitch conversion
conductive layer
thickness direction
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Application number
PCT/JP2022/041213
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English (en)
Japanese (ja)
Inventor
滋樹 坂井
賀津雄 木村
正展 八木
Original Assignee
ニデックアドバンステクノロジー株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by ニデックアドバンステクノロジー株式会社 filed Critical ニデックアドバンステクノロジー株式会社
Priority to CN202280073810.2A priority Critical patent/CN118202252A/zh
Publication of WO2023080206A1 publication Critical patent/WO2023080206A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices

Definitions

  • the present invention relates to a pitch conversion unit and its manufacturing method.
  • a pitch conversion unit for converting the pitch of the plurality of contact terminal side electrodes into the pitch of the plurality of device side electrodes.
  • a pitch conversion unit for example, a space transformer including a ceramic substrate, a wiring layer, and a thin film layer is known, as disclosed in Patent Document 1.
  • the ceramic substrate includes at least one wiring layer inside the ceramic substrate.
  • a conductive path is provided in the ceramic substrate so as to penetrate the wiring layer in the ceramic substrate. Wiring layers connected to the conductive path are provided on one surface and the opposite surface of the ceramic substrate.
  • the wiring layer located on one surface of the ceramic substrate has a wiring pattern corresponding to the arrangement pattern of the probes.
  • the wiring layer located on the opposite side of the ceramic substrate is connected to the printed circuit board via an extendable pogo pin unit.
  • the printed circuit board has printed wiring that can be connected to test circuitry on the inspection machine.
  • Such a conductive path is generally formed by forming a via hole in the substrate in the thickness direction and filling the via hole with a conductive material to electrically connect the conductive layer constituting the wiring layer. Methods are known for forming conductive vias connected to the .
  • the conductive layer is exposed by processing a part of the insulating layer using a laser beam or the like. form a hole.
  • part of the insulating layer may remain on the bottom surface of the hole formed by the laser beam. That is, the conductive layer may not be exposed at the bottom surface of the via hole. In such a case, there is a possibility that sufficient bonding strength cannot be obtained between the conductive via formed by filling the via hole with a conductive material and the conductive layer.
  • An object of the present invention is to improve the bonding strength between a conductive via penetrating an insulating layer in the thickness direction and a conductive layer in a pitch conversion unit that converts the pitch of a plurality of contact terminal side electrodes to the pitch of a plurality of device side electrodes. It is to provide a possible configuration.
  • a pitch conversion unit includes: a plurality of contact terminal side electrodes electrically connected to a plurality of contact terminals for transmitting and receiving electric signals to and from an inspection point to be inspected; and a plurality of device-side electrodes connected to each other, the pitch conversion unit converting the pitch of the plurality of contact terminal-side electrodes into the pitch of the plurality of device-side electrodes.
  • This pitch conversion unit includes: a plurality of resin layers laminated in a thickness direction; a plurality of through conductors penetrating through at least one resin layer among the plurality of resin layers in the thickness direction; The through conductor located on the opposite side to the two resin layers adjacent in the thickness direction among the plurality of through conductors and penetrating the two adjacent resin layers in the thickness direction respectively. a pair of conductive layers to be connected; an insulating layer positioned between the pair of conductive layers; and a via.
  • One conductive layer of the pair of conductive layers has a recess recessed in the thickness direction in at least a portion of a joint portion with the conductive via.
  • a method of manufacturing a pitch conversion unit is a method of manufacturing a pitch conversion unit having the above configuration.
  • This manufacturing method includes a via hole forming step of forming a via hole forming a part of the conductive via in the insulating layer, and a step of forming the via hole in the insulating layer; a recess forming step of forming the recess in a portion of the conductive layer overlapping the via hole; and a conductive via forming the conductive via by filling a conductive material in the via hole. and a forming step.
  • the pitch conversion unit in the pitch conversion unit for converting the pitch of the plurality of contact terminal side electrodes to the pitch of the plurality of device side electrodes, the conductive vias penetrating the insulating layer in the thickness direction It is possible to realize a configuration capable of improving the bonding strength between the substrate and the conductive layer.
  • FIG. 1 is a conceptual diagram showing a schematic configuration of a semiconductor inspection device provided with a pitch conversion unit according to an embodiment.
  • FIG. 2 is a partial cross-sectional view showing the schematic configuration of the inspection unit and showing the inspection jig in cross section.
  • FIG. 3 is a cross-sectional view schematically showing an example of the configuration of the pitch conversion unit.
  • 4A is a partially enlarged sectional view showing an enlarged part of the pitch conversion unit shown in FIG. 3.
  • FIG. FIG. 4B is an enlarged portion showing a part of the pitch conversion unit, in which the conductive layer is formed with a concave portion forming a cylindrical space whose bottom radius is smaller than the radius of the opening formed in the conductive layer; It is an expanded sectional view.
  • FIG. 1 is a conceptual diagram showing a schematic configuration of a semiconductor inspection device provided with a pitch conversion unit according to an embodiment.
  • FIG. 2 is a partial cross-sectional view showing the schematic configuration of the inspection unit and showing the inspection jig
  • FIG. 5 is a cross-sectional view showing an example of a method of manufacturing the pitch conversion unit.
  • FIG. 6 is a cross-sectional view showing an example of a method of manufacturing the pitch conversion unit.
  • FIG. 7 is a cross-sectional view showing an example of a method of manufacturing the pitch conversion unit.
  • FIG. 8 is a cross-sectional view showing an example of a method of manufacturing the pitch conversion unit.
  • FIG. 9 is a cross-sectional view showing an example of a method of manufacturing the pitch conversion unit.
  • FIG. 10 is a cross-sectional view showing an example of a method of manufacturing the pitch conversion unit.
  • the pitch conversion unit according to the present invention can be used in an inspection device that electrically inspects an object to be inspected by bringing a probe into contact with the object to be inspected and causing a current to flow.
  • an inspection device that electrically inspects an object to be inspected by bringing a probe into contact with the object to be inspected and causing a current to flow.
  • a semiconductor inspection apparatus for electrically inspecting a semiconductor wafer to be inspected will be described as an example.
  • FIG. 1 is a perspective view showing a schematic configuration of a semiconductor inspection apparatus 100 having a pitch conversion unit 1 according to an embodiment of the invention.
  • a semiconductor inspection apparatus 100 is an inspection apparatus for inspecting a circuit formed on a semiconductor wafer DUT, which is an example of an object to be inspected.
  • circuits corresponding to a plurality of semiconductor chips are formed on a semiconductor substrate such as silicon.
  • the inspection target is, for example, an electronic component such as a semiconductor chip, a CSP (Chip size package), or a semiconductor element (IC: Integrated Circuit).
  • the semiconductor inspection apparatus 100 shown in FIG. 1 The semiconductor inspection apparatus 100 shown in FIG. 1
  • the sample table 106 has a mounting portion 106a on which the semiconductor wafer DUT is mounted on its upper surface.
  • the sample table 106 can fix the semiconductor wafer DUT to be inspected at a predetermined position.
  • the mounting portion 106a can be raised and lowered.
  • the mounting section 106 a can raise the semiconductor wafer DUT accommodated in the sample stage 106 to the inspection position, and store the inspected semiconductor wafer DUT in the sample stage 106 .
  • the mounting section 106a can rotate the semiconductor wafer DUT, for example, to orient the orientation flat in a predetermined direction.
  • the inspection processing unit 108 has, for example, a power supply circuit, a voltage source, an ammeter, a microcomputer, and the like.
  • the inspection processing unit 108 moves and positions the inspection unit 104 by controlling a driving mechanism (not shown), and brings each probe 121 of the inspection unit 104 into contact with each inspection point of the semiconductor wafer DUT. Thereby, each inspection point and the inspection section 104 are electrically connected.
  • the inspection processing unit 108 supplies an alternating current or voltage for inspection to each inspection point of the semiconductor wafer DUT via each probe 121 in the above-described state, and the voltage signal or current signal obtained from each probe 121 Based on this, the semiconductor wafer DUT is inspected for, for example, circuit pattern breaks and short circuits.
  • the test processing unit 108 may measure the impedance of the test object based on the voltage signal or current signal obtained from each probe 121 by supplying alternating current or voltage to each test point.
  • FIG. 2 is a partial cross-sectional view showing a schematic configuration of the inspection unit 104. As shown in FIG. In FIG. 2, the inspection jig 2 of the inspection unit 104 is shown in cross section for explanation. Note that the configuration shown in FIG. 2 is an example of the inspection unit 104 . The configuration of the inspection unit 104 is not limited to the configuration shown in FIG.
  • the inspection unit 104 has an inspection jig 2 and a connection plate 3 .
  • the inspection jig 2 is a jig for inspecting the semiconductor wafer DUT by bringing a plurality of probes 121 into contact therewith.
  • the inspection unit 104 is, for example, a so-called probe card.
  • the inspection jig 2 has a pitch conversion unit 1, a plurality of probes 121 (contact terminals), and a penetrating member 122 that holds the plurality of probes 121 with their tips directed toward the semiconductor wafer DUT.
  • the inspection jig 2 includes a plurality of probes 121 corresponding to inspection points within a partial area (for example, the hatched area in FIG. 1, hereinafter referred to as an inspection area) of the plurality of chips formed on the semiconductor wafer DUT. have The probe 121 penetrates through the penetrating member 122 . Since the structures of the probe 121 and the penetrating member 122 are the same as those of the conventional art, detailed description thereof will be omitted.
  • connection plate 3 is detachable with the pitch conversion unit 1 .
  • the connection plate 3 has a plurality of electrodes (not shown) electrically connected to the pitch conversion unit 1 .
  • Each electrode of the connection plate 3 is electrically connected to the inspection processing section 108 by, for example, a cable 131, a connection terminal 132, and the like.
  • the pitch conversion unit 1 is a pitch conversion member for converting the spacing between the probes 121 to the electrode pitch of the connection plate 3 .
  • the pitch conversion unit 1 has, on one surface, a plurality of contact terminal side electrodes 21 that are in contact with and conduct with a plurality of probes 121 of the inspection jig 2 .
  • the pitch conversion unit 1 has a plurality of device-side electrodes 22 on the other surface that are electrically connected to electrodes (not shown) of the connection plate 3 via the connection member 4 . A detailed configuration of the pitch conversion unit 1 will be described later.
  • connection member 4 is positioned between the device-side electrode 22 of the pitch conversion unit 1 and the electrode of the connection plate 3 and is in elastic contact with both.
  • the connection member 4 electrically connects the device-side electrode 22 of the pitch conversion unit 1 and the electrode of the connection plate 3 .
  • the connection member 4 is a so-called pogo pin unit.
  • FIG. 1 is an explanatory diagram schematically and conceptually showing an example of the configuration of the semiconductor inspection apparatus 100, and FIG. It is an explanatory view schematically and conceptually shown.
  • FIGS. 1 and 2 the number, density and arrangement of the probes 121, the shape of the inspection section 104, the size ratio, etc. are also illustrated in a simplified and conceptualized manner.
  • the inspection area is emphasized more than that of a general semiconductor inspection apparatus. The inspection area may be smaller than the area shown in FIG. 1 or larger than the area shown in FIG.
  • FIG. 3 is a cross-sectional view schematically showing the configuration of the pitch conversion unit 1.
  • FIG. 4A is a partially enlarged sectional view showing an enlarged part of the pitch conversion unit 1.
  • the pitch conversion unit 1 has a substrate 11 made of resin, a contact terminal side electrode 21, a device side electrode 22, and a conductor 31 positioned inside the substrate 11.
  • the substrate 11 has multiple resin layers 12 and multiple insulating layers 13 .
  • the resin layer 12 is made of epoxy resin such as prepreg, polyimide resin, or the like.
  • the insulating layer 13 is made of, for example, a prepreg, a bonding sheet, or the like.
  • the multiple resin layers 12 and the multiple insulating layers 13 are laminated in the thickness direction. More specifically, as shown in FIG. 3, insulating layers 13 are positioned between resin blocks B composed of a plurality of resin layers 12 laminated in the thickness direction.
  • each resin block B is formed by laminating a plurality of resin layers 12 .
  • the resin blocks B are bonded to each other via the insulating layer 13 .
  • the conductor 31 includes multiple metal layers 32 , multiple through conductors 33 , and multiple conductive vias 34 .
  • a plurality of metal layers 32 are formed planarly along the resin layer 12 in each resin block B.
  • the plurality of through conductors 33 penetrate the resin layer 12 in the thickness direction and electrically connect the metal layers 32 in the thickness direction. That is, the metal layer 32 and the penetrating conductor 33 are electrically connected within each resin block B.
  • the metal layer 32 and the penetrating conductor 33 are made of copper, for example.
  • the metal layer 32 and the penetrating conductor 33 are formed by plating, for example.
  • the plurality of metal layers 32 have conductive layers 36 located at the ends of the resin blocks B in the stacking direction of the resin layers 12 .
  • the conductive layer 36 is electrically connected to the penetrating conductor 33 penetrating the resin layer 12 .
  • the surface of the conductive layer 36 located at the end of the resin block B is covered with the insulating layer 13 . Therefore, the insulating layer 13 is positioned between the conductive layers 36 positioned at the ends in the stacking direction of the adjacent resin blocks B. As shown in FIG. That is, the insulating layer 13 connects the conductive layers 36 located at the ends of the adjacent resin blocks B to each other.
  • the conductive layer 36 of the adjacent resin block B is located on the opposite side to the two resin layers 12 adjacent in the thickness direction of the conductive layer 36 among the plurality of resin layers 12, and the plurality of through conductors 33 They are a pair of conductive layers electrically connected to the penetrating conductors 33 penetrating the two adjacent resin layers 12 in the thickness direction.
  • the insulating layer 13 is positioned between the pair of conductive layers 36 .
  • the conductive layer 36 has fine uneven portions 36a on the surface where the insulating layer 13 is located, that is, the surface on the insulating layer 13 side.
  • the uneven portion 36a is formed on the surface of the conductive layer 36 on the insulating layer 13 side by texturing or the like. Since the conductive layer 36 has uneven portions 36 a on its surface, the adhesion of the insulating layer 13 to the conductive layer 36 can be improved.
  • the through conductor 33 is also electrically connected to the contact terminal side electrode 21 formed on the surface of the pitch conversion unit 1 on the inspection jig 2 side.
  • the penetrating conductors 33 are also electrically connected to device-side electrodes 22 formed on the surface of the pitch conversion unit 1 on the side of the inspection device, that is, on the side of the connection plate 3 .
  • the conductive vias 34 are electrically connected to the conductive layers 36 of the adjacent resin blocks B through the insulating layer 13 in the thickness direction. That is, the conductive vias 34 electrically connect the conductive layers 36 of the resin blocks B adjacent to each other. As a result, the conductive layers 36 of the adjacent resin blocks B are electrically connected to form an electric circuit within the pitch conversion unit 1 .
  • the insulating layer 13 provided on one of the adjacent resin blocks B is heated and fused to the other resin block B. Thereby, the adjacent resin blocks B are integrated through the insulating layer 13 .
  • the conductive via 34 is positioned within the via hole 13a penetrating the insulating layer 13 in the thickness direction.
  • the conductive vias 34 are made of a conductive paste filled in the via holes 13a.
  • This conductive paste contains metal particles as a filler and an organic substance as a binder.
  • the metal particles of the conductive paste contain, for example, tin.
  • the conductive paste becomes the conductive vias 34 by, for example, heat treatment.
  • the conductive vias 34 are joined to the conductive layers 36 of the adjacent resin blocks B. Although not shown, a reaction layer of copper and tin is formed at the junction between the conductive via 34 and the conductive layer 36 . Since the conductive via 34 and the conductive layer 36 are metal-bonded by this reaction layer, sufficient bonding strength between the conductive via 34 and the conductive layer 36 can be secured.
  • One conductive layer 36 of the conductive layers 36 of the adjacent resin blocks B has a concave portion 40 at the joint portion with the conductive via 34 .
  • the recess 40 has a shape in which the entire joint portion is recessed in the thickness direction of the conductive layer 36 . At least a part of the joint portion of the recess 40 may have a shape recessed in the thickness direction.
  • the recess 40 has a shape in which the entire joining portion of the conductive layer 36 with the conductive via 34 is recessed in the thickness direction.
  • the conductive layer 36 can be exposed over the entire joint portion of the conductive layer 36 with the conductive via 34 . Therefore, it is possible to more reliably prevent the surface of the conductive layer 36 from being covered with an insulating layer or the like at the joint portion. Therefore, since the conductive layer 36 and the conductive via 34 can be metal-bonded more firmly at the bonding portion, the bonding strength between the conductive layer 36 and the conductive via 34 can be further improved.
  • the recessed portion 40 has, for example, a circular shape when the conductive layer 36 is viewed in the stacking direction of the conductive layer 36 and the insulating layer 13 .
  • the concave portion 40 may have a shape other than a circular shape, such as an elliptical shape, a rectangular shape, or a polygonal shape, when the conductive layer 36 is viewed in the stacking direction.
  • the concave portion 40 may have the same shape and size as the via hole portion 13a of the conductive via 34 when the conductive layer 36 is viewed in the stacking direction, or may be different from the via hole portion 13a of the conductive via 34. It may have the same shape as the via hole 13a of the conductive via 34 and may be smaller than the via hole 13a.
  • the recess 40 includes a bottom surface 41 and side surfaces 42 .
  • the bottom surface 41 is, for example, a circular flat surface when the conductive layer 36 is viewed in the stacking direction.
  • the bottom surface 41 may have a shape other than a circular shape such as an elliptical shape, a rectangular shape, or a polygonal shape when the conductive layer 36 is viewed in the stacking direction.
  • the bottom surface 41 may be a curved surface, or may have a stepped deep groove, a spiral or annular groove, unevenness, or the like.
  • the side surface 42 extends in the direction normal to the surface of the conductive layer 36 on which the opening of the recess 40 is formed.
  • the side surfaces 42 may extend obliquely with respect to said surface.
  • the recess 40 has, for example, a cylindrical or truncated conical space inside.
  • the recess 40 has a cylindrical space inside, the radius of the bottom surface 41 of which is equal to the radius of the opening formed in the conductive layer 36 .
  • the recess 140 may have a cylindrical or frusto-conical space inside, the radius of the bottom surface 141 of which is smaller than the radius of the opening formed in the conductive layer 36 .
  • reference numeral 142 denotes the side surface of the recess 140
  • reference numeral 141a denotes the recessed portion of the bottom surface of the recess 140.
  • the thickness T1 of the conductive layer 36 at the bottom surface 41 of the recess 40 is smaller than the thickness of the conductive layer 36 other than the recess 40 .
  • the thickness T1 of the conductive layer 36 at the bottom surface 41 is smaller than the thickness T2 of the conductive layer 36 at the lowest portion of the uneven portion 36a of the conductive layer 36 .
  • a thickness T1 of the conductive layer 36 at the bottom surface 41 is the thickness of the conductive layer 36 at a portion of the bottom surface 41 where the recess 40 has the smallest depth.
  • the bottom surface 41 of the recess 40 is positioned inward in the thickness direction of the conductive layer 36 from the lowermost portion of the uneven portion 36a formed on the surface of the conductive layer 36 on the insulating layer 13 side.
  • the lowermost portion is a concave portion positioned most inward in the thickness direction of the uneven portion 36 a in the thickness direction of the conductive layer 36 .
  • the conductive layer 36 has the uneven portion 36 a on the surface located on the insulating layer 13 side for improving the adhesion with the insulating layer 13 .
  • the bottom surface 41 of the concave portion 40 is located inside the conductive layer 36 in the thickness direction of the lowermost portion of the concave/convex portion 36a.
  • the conductive layer 36 can be exposed on the bottom surface 41 of the recess 40 . Therefore, since the conductive layer 36 and the conductive via 34 can be metal-bonded more firmly in the concave portion 40, the bonding strength between the conductive layer 36 and the conductive via 34 can be further improved.
  • the bottom surface 41 has a bottom recessed portion 41a in the central portion when the conductive layer 36 is viewed in the stacking direction.
  • the bottom recessed portion 41 a is recessed in the thickness direction of the conductive layer 36 compared to other portions of the bottom surface 41 . That is, the recessed portion 40 has a bottom recessed portion 41 a that is recessed in the thickness direction more than other portions of the recessed portion 40 on the bottom surface 41 .
  • the amount of depression of the bottom surface depression portion 41 a is the largest at the central portion of the bottom surface 41 when the conductive layer 36 is viewed in the stacking direction, and decreases toward the outer periphery of the bottom surface 41 .
  • the thickness T3 of the conductive layer 36 at the central position of the bottom surface 41 as viewed in the stacking direction of the conductive layer 36 is the smallest among the thicknesses of the conductive layer 36 in the recess 40 .
  • the conductive vias 34 are formed by filling the via holes 13a of the insulating layer 13 with a metal paste or the like, the metal paste enters the bottom recessed portions 41a of the recesses 40 of the conductive layer 36. . Therefore, the conductive via 34 can be more strongly bonded to the bottom surface 41 of the conductive layer 36 . Further, since the bottom surface 41 has the bottom recessed portion 41a, the metal paste can be easily filled in the bottom recessed portion 41a. Therefore, with the above configuration, the conductive via 34 that is more strongly bonded to the bottom surface 41 of the conductive layer 36 can be easily formed.
  • the bottom recessed portion 41a is located in the central portion of the joint portion of the conductive layer 36 with the conductive via 34 when the conductive layer 36 is viewed in the stacking direction.
  • a side surface 42 of the recess 40 is a cylindrical surface in which the opening side of the recess 40 coincides with the bottom surface 41 when the conductive layer 36 is viewed in the stacking direction.
  • the side surface 42 has, for example, an annular shape when viewed in the stacking direction of the resin layers 12 .
  • the side surface 42 may have a shape other than an annular shape, such as an elliptical annular shape, a rectangular annular shape, or a polygonal annular shape when viewed in the stacking direction of the resin layers 12 .
  • the pitch conversion unit 1 includes a plurality of contact terminal side electrodes 21 electrically connected to a plurality of probes 121 that transmit and receive electrical signals to and from an inspection point to be inspected, and a semiconductor inspection device 100 that is electrically connected to the semiconductor inspection device 100 . It is a pitch conversion unit that has a plurality of device-side electrodes 22 that are physically connected, and converts the pitch of the plurality of contact terminal-side electrodes 21 into the pitch of the plurality of device-side electrodes.
  • the pitch conversion unit 1 includes a plurality of resin layers 12 laminated in the thickness direction, a plurality of through conductors 33 penetrating at least one resin layer 12 of the plurality of resin layers 12 in the thickness direction, and a plurality of resin layers 12 .
  • a penetrating conductor located on the opposite side of two resin layers 12 adjacent in the thickness direction among the layers 12 and penetrating the two adjacent resin layers 12 among the plurality of penetrating conductors 33 in the thickness direction.
  • a pair of conductive layers 36 electrically connected to the body 33, an insulating layer 13 positioned between the pair of conductive layers 36, and a pair of conductive layers penetrating through the insulating layer 13 in the thickness direction. and a conductive via 34 that is bonded to the layer 36 .
  • One conductive layer 36 of the pair of conductive layers 36 has a recess 40 recessed in the thickness direction in at least a part of the joint portion with the conductive via 34 .
  • the conductive layer 36 can be exposed in the portion where the concave portion 40 is formed in the joint portion of the conductive layer 36 with the conductive via 34 . Therefore, it is possible to prevent the surface of the conductive layer 36 from being covered with the insulating layer 13 or the like in the concave portion 40 . Therefore, since the conductive layer 36 and the conductive via 34 can be metal-bonded within the recess 40, the bonding strength between the conductive layer 36 and the conductive via 34 can be improved.
  • Resin block B has a plurality of resin layers 12 , a plurality of metal layers 32 , and a plurality of through conductors 33 . Therefore, when forming the resin block B, while laminating the plurality of resin layers 12 in the thickness direction, the plurality of metal layers 32 are formed between the resin layers 12, and the resin layers 12 are penetrated in the thickness direction. to form a plurality of through conductors 33 bonded to the metal layer 32 .
  • the method of forming the resin layer 12, the metal layer 32 and the penetrating conductor 33 in the resin block B is the same as the conventional method, so detailed description thereof will be omitted.
  • the conductive layer 36 which is part of the metal layer 32, is exposed on the joint side of the resin block B that is joined as described later.
  • the contact terminal side electrode 21 is exposed to the resin block B positioned at one end in the stacking direction among the plurality of resin blocks B constituting the pitch conversion unit 1 .
  • the device-side electrode 22 is exposed to the resin block B positioned at the other end in the stacking direction among the plurality of resin blocks B constituting the pitch conversion unit 1 .
  • an uneven portion 36a is formed on the surface of the exposed portion of the conductive layer 36 in the resin block B by texturing or the like.
  • the uneven portion 36a is formed on the surface of the exposed portion of the conductive layer 36, the adhesion of the insulating layer 13 to the conductive layer 36 is improved when the insulating layer 13 is formed on the resin block B as described later. can be done.
  • the insulating layer 13 is formed on the surface of the resin block B where the conductive layer 36 is exposed, and the PET layer 14 is formed on the insulating layer 13 .
  • the portions of the insulating layer 13 and the PET layer 14 located on the conductive layer 36 are irradiated with laser light ⁇ to form the holes 15 by laser processing.
  • Holes 15 include via holes 13 a formed in insulating layer 13 .
  • the step of forming the via holes 13a in the insulating layer 13 is the via hole forming step.
  • the laser light ⁇ is, for example, CO 2 laser light or UV laser light.
  • the inside of the hole 15 is irradiated with a laser beam ⁇ to partially remove the insulating layer 13 remaining at the bottom of the hole 15 .
  • the laser beam ⁇ has a power density sufficient to partially remove the conductive layer 36 .
  • recesses 40 are formed in the conductive layer 36 .
  • the recessed portion 40 is formed in a portion of the conductive layer 36 that overlaps the via hole portion 13a when the conductive layer 36 is viewed in the stacking direction. Since the shape of the concave portion 40 is as described above, detailed description thereof will be omitted.
  • the laser beam ⁇ is, for example, a green laser beam, a UV laser beam, an excimer laser beam, or the like.
  • a conductive via 34 is formed in which the via hole 13a of the insulating layer 13 is filled with the conductive paste.
  • the step of forming the conductive via 34 by filling the via hole 13a with a conductive paste, which is a conductive material, is the conductive via forming step.
  • another resin block B is superimposed on the insulating layer 13, and by heating the two resin blocks B to a temperature at which the insulating layer 13 is fused, It is possible to join the resin blocks B to each other. Also, the conductive vias 34 are metal-bonded to the conductive layers 36 of the two resin blocks B, respectively.
  • the pitch conversion unit 1 composed of a plurality of resin blocks B is formed.
  • the manufacturing method of the pitch conversion unit 1 of the present embodiment includes a via hole forming step of forming a via hole 13a constituting a part of the conductive via 34 in the insulating layer 13, and a step of forming the conductive layer 36 in the stacking direction.
  • a recess forming step of forming a recess 40 in a portion of the conductive layer 36 overlapping the via hole 13a and a conductive material filling the via hole 13a with a conductive material to form the conductive via 34 are performed. and a conductive via formation step.
  • the via hole 13a formed in the insulating layer 13 is filled with the conductive paste to form the conductive via 34 joined to the conductive layer 36, and the conductive layer 36 is viewed in the stacking direction.
  • the pitch conversion unit 1 is obtained in which the recesses 40 are formed in the portions of the conductive layer 36 overlapping the via holes 13a.
  • the conductive layer 36 can be exposed in the portion where the concave portion 40 is formed in the joint portion of the conductive layer 36 with the conductive via 34 . Therefore, it is possible to prevent the surface of the conductive layer 36 from being covered with the insulating layer 13 or the like in the concave portion 40 . Therefore, since the conductive layer 36 and the conductive via 34 can be metal-bonded within the recess 40, the bonding strength between the conductive layer 36 and the conductive via 34 can be improved.
  • the recess 40 is formed by irradiating a portion of the conductive layer 36 that overlaps the via hole 13a with the laser beam ⁇ when the conductive layer 36 is viewed in the stacking direction.
  • the concave portion 40 can be easily formed in the conductive layer 36 in the via hole forming step. Therefore, the pitch conversion unit 1 having the configuration of this embodiment can be easily obtained.
  • the pitch conversion unit is not limited to the semiconductor inspection device, and may be used, for example, in a substrate inspection device that inspects a substrate.
  • the board to be inspected by the board inspection apparatus may be a ceramic multilayer wiring board, a glass epoxy board, a flexible board, a ceramic multilayer wiring board, a package board for a semiconductor package, an interposer board, a film carrier, or the like. It may be an electrode plate for a display such as a liquid crystal display, an EL (Electric-Luminescence) display, a touch panel display, an electrode plate for a touch panel, or the like, or it may be another type of substrate. good.
  • the pitch conversion unit 1 is formed by bonding a plurality of resin blocks B via the insulating layer 13 .
  • the pitch conversion unit may be formed by laminating a plurality of resin layers as long as it has a configuration having conductive vias.
  • the pitch conversion unit may include an insulating layer. In this case, the configuration of this embodiment may be applied to the junction between the conductive via and the conductive layer.
  • the resin block B has three resin layers 12 in the example shown in FIG.
  • the insulating block may have two or less resin layers, or may have four or more resin layers.
  • the pitch conversion unit 1 has three resin blocks B in the example shown in FIG.
  • the pitch conversion unit may have two or less resin blocks, or four or more resin blocks.
  • the bottom surfaces 41 and 141 of the recesses 40 and 140 have bottom recess portions 41a and 141a in the central portion when the conductive layer 36 is viewed in the stacking direction.
  • the bottom surface may have a recessed portion on the bottom surface other than the central portion when viewed in the stacking direction of the conductive layers.
  • the bottom recessed portion may be provided at any position of the joint portion of the conductive layer with the conductive via when the conductive layer is viewed in the stacking direction.
  • the bottom surface may not have a bottom surface recess.
  • the bottom surface may have a convex portion.
  • the recess amount of the bottom recess portion 41a is the largest at the central portion of the bottom surface 41 when the conductive layer 36 is viewed in the stacking direction, and becomes smaller toward the outer peripheral side of the bottom surface 41.
  • the shape of the bottom recessed portion may be any shape as long as it is recessed in the thickness direction compared to other portions of the bottom surface of the recess.
  • the side surface 42 of the recess 40 is a cylindrical surface in which the opening side of the recess 40 is the same as the bottom surface 41 when the conductive layer 36 is viewed in the stacking direction.
  • the side surface of the recess may be a tapered surface in which the opening side of the recess is positioned radially outward or radially inward from the bottom surface when the conductive layers are viewed in the stacking direction.
  • the side surface of the recess may be polygonal when the conductive layers are viewed in the stacking direction.
  • a side surface of the recess may include a plurality of flat surfaces.
  • the laser beam ⁇ is used when forming the recesses 40 in the conductive layer 36 .
  • the recesses may be formed mechanically in the conductive layer using a tool or the like. That is, any processing method other than laser processing may be used as long as the processing method is capable of removing the insulating layer on the conductive layer and exposing the conductive layer at the bottom surface of the via hole.
  • the conductive layer 36 has fine uneven portions 36a on the surface on the insulating layer 13 side.
  • the conductive layer does not have to have unevenness on the surface on the insulating layer side.
  • the present invention includes a plurality of contact terminal side electrodes electrically connected to a plurality of contact terminals for transmitting and receiving electric signals to and from an inspection point to be inspected, and a plurality of device side electrodes electrically connected to an inspection device. and a pitch conversion unit that converts the pitch of the plurality of contact terminal side electrodes into the pitch of the plurality of device side electrodes.
  • connection plate 1 pitch conversion unit 2 inspection jig 3 connection plate 4 connection member 11 substrate 12 resin layer 13 insulation layer 13a via hole 14 PET layer 21 contact terminal side electrode 22 device side electrode 31 conductor 32 metal layer 33 through conductor 34 Conductive via 36 Conductive layer 36a Uneven portions 40, 140 Concave portions 41, 141 Bottom surfaces 41a, 141a Bottom recessed portions 42, 142 Side surface 100 Semiconductor inspection device 104 Inspection unit 106 Sample table 106a Mounting unit 108 Inspection processing unit 121 Probe 122 Penetrating member 131 cable 132 connection terminal B resin block DUT semiconductor wafer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Leads Or Probes (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)

Abstract

L'invention concerne une unité de conversion de pas permettant de convertir le pas d'une pluralité d'électrodes côté borne de contact vers le pas d'une pluralité d'électrodes côté dispositif, l'unité de conversion de pas étant configurée de telle sorte que la force d'assemblage entre une couche électroconductrice et un trou d'interconnexion électroconducteur pénétrant à travers une couche d'isolation dans une direction d'épaisseur puisse être améliorée. Ladite unité de conversion de pas (1) comprend : une pluralité de couches de résine (12) stratifiées dans une direction d'épaisseur; une pluralité de corps électroconducteurs pénétrants (33) qui pénètrent à travers les couches de résine (12) dans la direction de l'épaisseur; une paire de couches électroconductrices (36) disposées sur les côtés opposés de deux couches de résine (12) qui sont adjacentes dans la direction de l'épaisseur, les couches électroconductrices (36) étant connectées électriquement aux corps électroconducteurs pénétrants (33) qui pénètrent à travers chacune des deux couches de résine adjacentes dans la direction de l'épaisseur, parmi la pluralité de corps électroconducteurs pénétrants (33); une couche d'isolation (13) positionnée entre la paire de couches électroconductrices (36); et un trou d'interconnexion électroconducteur (34) pénétrant à travers la couche d'isolation (13) dans la direction de l'épaisseur, des sections d'extrémité du trou d'interconnexion électroconducteur (34) étant jointes à la paire de couches électroconductrices (36). L'une des deux couches électroconductrices (36) présente, dans au moins une section de la partie jointe au trou d'interconnexion électroconducteur (34), un évidement (40) enfoncé dans la direction de l'épaisseur.
PCT/JP2022/041213 2021-11-08 2022-11-04 Unité de conversion de pas et son procédé de fabrication WO2023080206A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202280073810.2A CN118202252A (zh) 2021-11-08 2022-11-04 节距变换单元及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-182096 2021-11-08
JP2021182096 2021-11-08

Publications (1)

Publication Number Publication Date
WO2023080206A1 true WO2023080206A1 (fr) 2023-05-11

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Country Link
CN (1) CN118202252A (fr)
TW (1) TW202326148A (fr)
WO (1) WO2023080206A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007115952A (ja) * 2005-10-21 2007-05-10 Matsushita Electric Ind Co Ltd インターポーザ基板及びその製造方法
JP2009236721A (ja) * 2008-03-27 2009-10-15 Kyocera Corp 基板、プローブカード・アセンブリ用基板および基板の製造方法
JP2009236639A (ja) * 2008-03-26 2009-10-15 Kyocera Corp 基板およびプローブカード・アセンブリ用基板
JP2011023694A (ja) * 2009-06-19 2011-02-03 Kyocera Corp 配線基板およびプローブカードならびに電子装置
WO2013031822A1 (fr) * 2011-08-29 2013-03-07 京セラ株式会社 Substrat de câblage en film mince et substrat pour carte de sonde

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007115952A (ja) * 2005-10-21 2007-05-10 Matsushita Electric Ind Co Ltd インターポーザ基板及びその製造方法
JP2009236639A (ja) * 2008-03-26 2009-10-15 Kyocera Corp 基板およびプローブカード・アセンブリ用基板
JP2009236721A (ja) * 2008-03-27 2009-10-15 Kyocera Corp 基板、プローブカード・アセンブリ用基板および基板の製造方法
JP2011023694A (ja) * 2009-06-19 2011-02-03 Kyocera Corp 配線基板およびプローブカードならびに電子装置
WO2013031822A1 (fr) * 2011-08-29 2013-03-07 京セラ株式会社 Substrat de câblage en film mince et substrat pour carte de sonde

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CN118202252A (zh) 2024-06-14

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