JP3707857B2 - Mounting substrate, semiconductor device using the same, and semiconductor chip evaluation method - Google Patents

Mounting substrate, semiconductor device using the same, and semiconductor chip evaluation method Download PDF

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Publication number
JP3707857B2
JP3707857B2 JP05631596A JP5631596A JP3707857B2 JP 3707857 B2 JP3707857 B2 JP 3707857B2 JP 05631596 A JP05631596 A JP 05631596A JP 5631596 A JP5631596 A JP 5631596A JP 3707857 B2 JP3707857 B2 JP 3707857B2
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mounting substrate
electrode
conductive body
flexible conductive
semiconductor chip
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JPH09246459A (en
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明久 内田
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Renesas Technology Corp
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Renesas Technology Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4673Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
    • H05K3/4676Single layer compositions

Description

【0001】
【発明の属する技術分野】
本発明は、マウント用基板およびそれを用いた半導体装置ならびに半導体チップの評価方法および半導体チップの評価装置に関し、特に、多ピンのマウント用基板に複数の半導体チップが電気的に接続されている半導体装置および複数の半導体チップを一括して評価を行うことができる半導体チップの評価方法および半導体チップの評価装置に関するものである。
【0002】
【従来の技術】
最近、LSI(Large Scale Integrated Circuit)などの半導体装置は、そのLSIチップの試験、検査、エージングなどの評価方法に際し各評価方法に対応した評価用配線基板が使用されており、また、LSIチップの実装において種々のマウント用基板が使用されている。
【0003】
ところで、本発明者は、LSIチップのバーンイン試験などの評価方法およびLSIチップのマウント用基板について検討した。以下は、本発明者によって検討された技術であり、その概要は次のとおりである。
【0004】
すなわち、LSI評価を行うバーンイン試験方法において、LSIチップと試験用の補助支持基板におけるテストピンとの間にベビーボードと呼ばれているテスト基板を設けて行われている。この場合、ベビーボードは機械的緩衝材の役割を果たすものとして挿入されているものである。
【0005】
また、モジュール、マザーボード、ドータボードまたはプリント基板などのマウント用基板にLSIチップを搭載する際には、LSIチップの電極をマウント用基板に直接的に固定することによって、LSIチップをマウント用基板に搭載している。
【0006】
なお、半導体集積回路装置を検査する評価技術について記載されている文献としては、例えば1994年8月20日、株式会社プレスジャーナル発行の「月刊Semiconductor World 1994年9月号」p72〜p76に記載されているものがある。
【0007】
【発明が解決しようとする課題】
ところが、前述したベビーボードはLSIチップの個別単体試験の時に使用され、その後のシステムへの搭載の際にはLSIチップから取り外される。したがって、ベビーボードはLSIチップの個別単体試験時にのみ各々一個ずつLSIチップに使用されているので、多数のベビーボードが必要となるという問題点がある。しかも、種々のLSIチップに対応した態様のベビーボードを使用する必要があることによって、種々の態様のベビーボードが種々のLSIチップの試験を行う数に応じて多数必要となる。その結果、試験用のコストが増加し、半導体装置の製造コストを低減する上で妨げとなる。
【0008】
一方、前述したLSIチップの電極をマウント用基板に直接的に固定する際に、マウント用基板に弾性がないので、LSIチップの電極が異常に変形したり、LSIチップの電極がマウント用基板の電極に電気的に接続された場合に接続に際して信頼性および電気的特性が悪化するという問題点がある。
【0009】
本発明の目的は、LSIチップなどの半導体チップとの電気的な接続における信頼性および電気的特性が優れているマウント用基板およびそれを用いた半導体装置を提供することにある。
【0010】
本発明の他の目的は、多数の半導体チップを高信頼度をもって同時に評価を行うことができる半導体チップの評価方法および評価装置を提供することにある。
【0011】
本発明の前記ならびにその他の目的と新規な特徴は、本明細書の記述および添付図面から明らかになるであろう。
【0012】
【課題を解決するための手段】
本願において開示される発明のうち、代表的なものの概要を簡単に説明すれば、以下のとおりである。
【0013】
すなわち、(1).本発明のマウント用基板は、複数の半導体チップを電気的に接続することができるものであって、フレキシブル導電性体が配線ベースの上面に電気的に接続されており、フレキシブル導電性体はシリコーンゴムなどの弾性を有する絶縁性弾性部材の上面および下面に絶縁層を備えており、絶縁性弾性部材および絶縁層に形成されている複数の貫通穴に金線などの導電性細線が埋め込まれており、しかもフレキシブル導電性体の上面に導電性細線と電気的に接続されている電極が形成されているものである。
【0014】
(2).本発明の半導体装置は、前記(1)のマウント用基板の上面の電極に複数のLSIチップなどの半導体チップにおける電極が固定されているものである。
【0015】
(3).本発明の半導体チップの評価方法は、前記(1)のマウント用基板の上面の電極に複数の半導体チップの電極を電気的に接続した後、マウント用基板を用いて複数の半導体チップの評価を同時に行う工程と、評価後、マウント用基板から半導体チップを取り除く工程とを有するものである。
【0016】
(4).本発明の半導体チップの評価装置は、前記(1)のマウント用基板の上面の電極に複数の半導体チップの電極が電気的に接続されている状態をもって評価装置に組み込み、マウント用基板を用いて複数の半導体チップの評価を同時に行うものである。
【0017】
【発明の実施の形態】
以下、本発明の実施の形態を図面に基づいて詳細に説明する。なお、実施の形態を説明するための全図において同一機能を有するものは同一の符号を付し、重複説明は省略する。
【0018】
(実施の形態1)
図1は、本発明の一実施の形態であるマウント用基板を示す概略平面図である。図2は、図1におけるA−A矢視断面を示す概略断面図である。図3は、図2の一部を拡大して示す概略断面図である。同図を用いて、本発明のマウント用基板を具体的に説明する。
【0019】
本実施の形態のマウント用基板は、配線ベース1の上面にフレキシブル導電性体2を電気的に接続している。
【0020】
配線ベース1は、多層の配線層3が絶縁膜4を介在させて形成されているものであり、配線層3は例えばアルミニウムなどからなり、絶縁膜4は例えばセラミックスなどからなる。配線ベース1の上面にはフレキシブル導電性体2と電気的に接続されているパッドなどの電極5が設けられており、下面にはピンなどの外部電極6が設けられている。なお、配線ベース1の態様として、半導体装置の種々のパッケージまたは半導体チップを搭載する種々の配線基板などとして使用されている先行技術のものを適用することができる。
【0021】
フレキシブル導電性体2は、例えばシリコーンゴムなどの絶縁性ゴムからなる絶縁性弾性部材7とその上面および下面に例えばポリイミド層などの絶縁層8とを有し、絶縁性弾性部材7および絶縁層8に複数の貫通穴が形成されており、その貫通穴に金線または金メッキが行われている真鍮線などの導電性細線9が埋め込まれている。フレキシブル導電性体2の上面および下面には導電性細線9と電気的に接続されている金フラットパッドまたは金バンプなどの電極10が形成されている。本実施の形態のフレキシブル導電性体2の上面の電極10は、例えば16個のLSIチップの電極と電気的に接続することができるように配置されている。フレキシブル導電性体2の下面の電極10は、設計仕様に応じて取り除き、その下面に露出している導電性細線9を配線ベース1の上面の電極5に直接的に接続した態様とすることができる。なお、フレキシブル導電性体2の電極10は、両面ともバンプ構造またはフラットパッド構造としたり、片面だけをバンプ構造とし他面をフラットパッド構造のものとするなど設計仕様に応じて種々の態様を採用することができる。
【0022】
絶縁性弾性部材7の厚さは1mm程度であり、絶縁層8の厚さは25μm程度であり、絶縁性弾性部材7が絶縁層8の内部に挟まれた構造となっている。また、絶縁性弾性部材7における複数の貫通穴は、絶縁性弾性部材7の上面に対して傾斜(例えば、本実施の形態では上面に対し45度傾斜)して形成されており、その貫通穴に導電性細線9が埋め込まれている。
【0023】
本実施の形態の絶縁層8における複数の貫通穴は、絶縁性弾性部材7と同時に形成されており、絶縁層8の上面に対して傾斜(例えば、本実施の形態では上面に対し45度傾斜)して形成されており、その貫通穴に導電性細線9が埋め込まれている。絶縁層8における複数の貫通穴の態様として、絶縁性弾性部材7とは別の工程により形成し、絶縁層8の上面に対して垂直状に形成されて、その貫通穴に埋め込まれた導電性部材に絶縁性弾性部材7に埋め込まれている導電性細線9を電気的に接続したものなど種々の態様とすることができる。
【0024】
本実施の形態のマウント用基板は、配線ベース1の上面に絶縁性弾性部材7を有するフレキシブル導電性体2を電気的に接続していることにより、フレキシブル導電性体2の上面の電極10に例えばLSIチップなどの半導体チップにおける電極を固定する際に、フレキシブル導電性体2に外部から荷重がかかっても、両者の電極にかかる応力や接続方向にかかる力を緩和することができる。また、フレキシブル導電性体2における絶縁性弾性部材7に埋め込まれている導電性細線9は、フレキシブル導電性体2の上面に対して傾斜して設けられていることにより、外部から荷重がかかっても、導電性細線9が切断することを防止できる。
【0025】
その結果、両者の電極の接続を確実に、しかも高精度に行うことができるので、両者の電極の接続の信頼性および電気的特性を向上させることができる。
【0026】
また、本実施の形態のマウント用基板は、フレキシブル導電性体2の上面の電極10のピッチを短縮することができるので、微細加工化された短ピッチの電極10とすることができ、しかも電気的特性を向上させた状態で配線ベース1の多ピン化を行うことができる。したがって、本実施の形態のマウント用基板によれば、これに搭載するLSIチップなどの半導体チップの電極であるピンの多ピン化、各々のピン間の短ピッチ化および高集積化を促進することができる。
【0027】
(実施の形態2)
図4は、本発明の他の実施の形態であるマウント用基板を示す概略断面図である。
【0028】
本実施の形態のマウント用基板は、前述した実施の形態1の配線ベース1の上面に螺旋状に卷かれた導電性細線9を有するフレキシブル導電性体2を電気的に接続している。
【0029】
本実施の形態のフレキシブル導電性体2は、絶縁性弾性部材7とその上面および下面に絶縁層8とを有し、絶縁層8の上面に対して垂直に形成されている貫通穴に埋め込まれた導電性部材11と、絶縁性弾性部材7に埋め込まれている導電性細線9とを電気的に接続したものであり、導電性細線9は螺旋状に卷かれたものとしていることによって、導電性細線9がばねの機能を有するものとなるので導電性細線9の弾性を高めることができる。
【0030】
本実施の形態のマウント用基板は、前述した実施の形態1と同様にフレキシブル導電性体2の上面の電極10に例えばLSIチップなどの半導体チップにおける電極を固定する際に、フレキシブル導電性体2に外部から荷重がかかっても、両者の電極にかかる応力や接続方向にかかる力を緩和することができる。また、フレキシブル導電性体2における絶縁性弾性部材7に埋め込まれている導電性細線9は、螺旋状に卷かれたものとしていることによって、導電性細線9がばねの機能を有するものとなるので導電性細線9の弾性を高めることができ、外部から荷重がかかっても、導電性細線9が切断することを防止できる。
【0031】
その結果、両者の電極の接続を確実に、しかも高精度に行うことができるので、両者の電極の接続の信頼性および電気的特性を向上させることができる。
【0032】
(実施の形態3)
図5は、本発明の他の実施の形態であるマウント用基板を用いた半導体装置を示す概略断面図である。
【0033】
本実施の形態の半導体装置は、前述した実施の形態1のマウント用基板の上面に16個のLSIチップ12を固定したものである。
【0034】
すなわち、本実施の形態の半導体装置は、前述した実施の形態1のマウント用基板の上面の電極10に各LSIチップ12の例えばはんだバンプなどの電極13を電気的に接続して、各LSIチップ12をマウント用基板の上面の電極10に固定した後、各LSIチップ12の上面に放熱フィン14を接続材15を用いて設置しているものである。
【0035】
本実施の形態の半導体装置は、前述した実施の形態1のマウント用基板の上面に複数のLSIチップ12を固定したものであることにより、フレキシブル導電性体2の上面の電極10にLSIチップ12における電極13を固定する際に、フレキシブル導電性体2に外部から荷重がかかっても、両者の電極にかかる応力や接続方向にかかる力を緩和することができる。
【0036】
その結果、フレキシブル導電性体2の上面の電極10とLSIチップ12の電極13の接続を確実に、しかも高精度に行うことができるので、両者の電極の接続の信頼性および電気的特性を向上させることができる。
【0037】
なお、本実施の形態の半導体装置の他の態様として、前述した実施の形態2のマウント用基板の上面に複数のLSIチップ12を固定しても、前述した本実施の形態の半導体装置と同様な効果を得ることができる。
【0038】
また、マウント用基板の上面に複数のLSIチップ12などの半導体チップを固定する態様として、多ピンMCC(Micro Carrier for LSI Chip)用パッド、多ピンCCB(Controlled Collapse Bonding)用パッドまたはTAB(Tape Automated Bonding)用電極などの種々の電極構造を有するLSIチップなどの半導体チップを適用することができる。また、マウント用基板の配線ベース1として、モジュール、マザーボード、ドータボードまたはプリント基板などに適用できる他、BGA(Ball Grid Array)またはPGA(Pin Grid Array)などの種々のパッケージ構造のものにも適用でき、マルチチップモジュール化したLSIなどの半導体装置とすることができる。
【0039】
(実施の形態4)
図6は、本発明の他の実施の形態であるマウント用基板を用いた半導体チップの評価方法および半導体チップの評価装置を説明するための概略断面図である。
【0040】
本実施の形態の半導体チップの評価方法について説明すると、ベビーボードと呼ばれているテスト基板を適用した配線ベース16の上面の電極17に前述した実施の形態1のフレキシブル導電性体2の下面の電極10を乗せた後、フレキシブル導電性体2の上面の電極10に放熱フィン14が取り付けられているLSIチップ12の電極13を配置する。その後、LSIチップ12とフレキシブル導電性体2と配線ベース16とを位置決めした状態でそれらを保持部材18により固定する。この場合、保持部材18は、LSIチップ12とフレキシブル導電性体2と配線ベース16とを挟むことによって、三者の位置決めを行っており、しかも着脱可能な状態で固定化を行っている。
【0041】
次に、この状態で複数のLSIチップ12を例えばバーンイン装置などの評価装置に組み込んで、スクリーニング試験などを行い、複数のLSIチップ12を同時に評価する。評価後、評価装置からLSIチップ12などを取り出して、保持部材18をLSIチップ12などから取り除くことにより、LSIチップ12の評価工程を終了する。
【0042】
本実施の形態の半導体チップの評価方法によれば、配線ベース16の上面に前述した実施の形態1のフレキシブル導電性体2を電気的に接続していることにより、フレキシブル導電性体2の上面の電極10に複数のLSIチップ12における電極13を配置する際に、フレキシブル導電性体2に外部から荷重がかかっても、両者の電極にかかる応力や接続方向にかかる力を緩和することができる。その結果、両者の電極の接続を確実に、しかも高精度に行うことができるので、両者の電極の接続の信頼性および電気的特性を向上させることができる。
【0043】
また、本実施の形態の半導体チップの評価方法によれば、複数のLSIチップ12とフレキシブル導電性体2と配線ベース16とを位置決めした状態でそれらを保持部材18により固定した状態で、複数のLSIチップ12を同時に評価するものであることにより、多数のLSIチップ12を同時に評価を容易に行うことができる。また、LSIチップ12の電極13とテスト基板を適用した配線ベース16との接続の際に、はんだリフローやフラックス洗浄などを行う必要がなく、保持部材18を用いて多数のLSIチップ12とテスト基板を適用した配線ベース16の電気的な接続と着脱を簡単に行うことができる。その結果、多数のLSIチップ12を高信頼度をもって同時に評価を容易に行うことができ、半導体装置の製造コストを低減することができる。
【0044】
本実施の形態の半導体チップの評価装置によれば、前述した半導体チップの評価方法を適用したものであることにより、多数のLSIチップ12を高信頼度をもって同時に評価を行うことができるので、評価する際のコストの低減化が図れ、その結果、半導体装置の製造コストを低減することができる。
【0045】
また、本実施の形態の半導体チップの評価方法および評価装置によれば、保持部材18を用いて多数のLSIチップ12とテスト基板を適用した配線ベース16の電気的な接続と着脱を簡単に行うことができる。その結果、評価後の多数のLSIチップ12の評価結果に応じた選別、LSIチップ12の再度の評価操作およびLSIチップ12の取り替え作業などを容易に行うことができる。また、配線ベース16およびフレキシブル導電性体2の修正または補修作業などを容易に行うことができる。したがって、半導体チップを評価する際のコストの低減化が図れ、その結果、半導体装置の製造コストを低減することができる。
【0046】
以上、本発明者によってなされた発明を発明の実施の形態に基づき具体的に説明したが、本発明は前記実施の形態に限定されるものではなく、その要旨を逸脱しない範囲で種々変更可能であることはいうまでもない。
【0047】
例えば、本発明のマウント用基板における配線ベース1は、半導体装置を実装する種々のパッケージにおける配線体または試験または検査などの種々の評価を行う際に使用するテスト基板などの種々の配線ベースを適用することができる。
【0048】
また、本発明のマウント用基板における絶縁性弾性部材7は、シリーコンゴムなどの絶縁性ゴムの他に、ポリイミド系の樹脂または種々のポリマーなどの弾性を有する絶縁物を材料とすることができる。
【0049】
さらに、本発明のマウント用基板を用いた半導体装置は、マウント用基板に固定したLSIチップ12に設置している放熱フィン14の他に、冷却ジャケットなどの種々の付帯部品を設置することができる。本発明のマウント用基板を用いた半導体装置は、計算機におけるメインフレームまたはワークステーション、パソコン、通信装置などの回路システムに使用されている半導体チップなどをマウント用基板に搭載した態様とすることができる。
【0050】
【発明の効果】
本願において開示される発明のうち、代表的なものによって得られる効果を簡単に説明すれば、以下のとおりである。
【0051】
(1).本発明のマウント用基板によれば、配線ベースの上面に絶縁性弾性部材を有するフレキシブル導電性体を電気的に接続していることにより、フレキシブル導電性体の上面の電極に半導体チップにおける電極を固定する際に、フレキシブル導電性体に外部から荷重がかかっても、両者の電極にかかる応力や接続方向にかかる力を緩和することができる。また、フレキシブル導電性体における絶縁性弾性部材に埋め込まれている導電性細線は、フレキシブル導電性体の上面に対して傾斜したものまたは螺旋状に卷かれたものとしていることによって、外部から荷重がかかっても、導電性細線が切断することを防止できる。その結果、両者の電極の接続を確実に、しかも高精度に行うことができるので、両者の電極の接続の信頼性および電気的特性を向上させることができる。
【0052】
(2).本発明のマウント用基板によれば、フレキシブル導電性体の上面の電極のピッチを短縮することができるので、微細加工化された短ピッチの電極とすることができ、しかも電気的特性を向上させた状態で配線ベースの多ピン化を行うことができる。したがって、本実施の形態のマウント用基板によれば、これに搭載するLSIチップなどの半導体チップの電極であるピンの多ピン化、各々のピン間の短ピッチ化および高集積化を促進することができる。
【0053】
(3).本発明の半導体集積回路装置などの半導体装置によれば、マウント用基板の上面に複数のLSIチップなどの半導体チップを固定したものであることにより、フレキシブル導電性体の上面の電極に半導体チップにおける電極を固定する際に、フレキシブル導電性体に外部から荷重がかかっても、両者の電極にかかる応力や接続方向にかかる力を緩和することができる。その結果、フレキシブル導電性体の上面の電極と半導体チップの電極の接続を確実に、しかも高精度に行うことができるので、両者の電極の接続の信頼性および電気的特性を向上させることができる。
【0054】
(4).本発明の半導体集積回路装置などの半導体装置によれば、マウント用基板の上面に複数のLSIチップなどの半導体チップを固定したものであることにより、多ピンMCC用パッド、多ピンCCB用パッドまたはTAB用電極などの種々の電極構造を有するLSIチップなどの半導体チップを適用することができる。また、マウント用基板の配線ベースとして、モジュール、マザーボード、ドータボードまたはプリント基板などに適用できる他、BGAまたはPGAなどの種々のパッケージ構造のものにも適用でき、マルチチップモジュール化したLSIなどの半導体装置とすることができる。
【0055】
(5).本発明の半導体チップの評価方法によれば、配線ベースの上面にフレキシブル導電性体を電気的に接続していることにより、フレキシブル導電性体の上面の電極に複数のLSIチップにおける電極を配置する際に、フレキシブル導電性体に外部から荷重がかかっても、両者の電極にかかる応力や接続方向にかかる力を緩和することができる。その結果、両者の電極の接続を確実に、しかも高精度に行うことができるので、両者の電極の接続の信頼性および電気的特性を向上させることができる。
【0056】
(6).本発明の半導体チップの評価方法によれば、複数のLSIチップとフレキシブル導電性体と配線ベースとを位置決めした状態でそれらを保持部材により固定した状態で、複数のLSIチップを同時に評価するものであることにより、多数のLSIチップを同時に評価を容易に行うことができる。また、LSIチップの電極とテスト基板を適用した配線ベースとの接続の際に、はんだリフローやフラックス洗浄などを行う必要がなく、保持部材を用いて多数のLSIチップとテスト基板を適用した配線ベースの電気的な接続と着脱を簡単に行うことができる。その結果、多数のLSIチップを高信頼度をもって同時に評価を容易に行うことができ、半導体装置の製造コストを低減することができる。
【0057】
(7).本発明の半導体チップの評価装置によれば、前述した半導体チップの評価方法を適用したものであることにより、多数のLSIチップを高信頼度をもって同時に評価を行うことができるので、半導体チップを評価する際のコストの低減化が図れ、その結果、半導体装置の製造コストを低減することができる。
【0058】
(8).本発明の半導体チップの評価方法および評価装置によれば、保持部材を用いて多数のLSIチップとテスト基板を適用した配線ベースの電気的な接続と着脱を簡単に行うことができる。その結果、評価後の多数のLSIチップの評価結果に応じた選別、LSIチップの再度の評価操作およびLSIチップの取り替え作業などを容易に行うことができる。また、配線ベースおよびフレキシブル導電性体の修正または補修作業などを容易に行うことができる。したがって、半導体チップを評価する際のコストの低減化が図れ、その結果、半導体装置の製造コストを低減することができる。
【図面の簡単な説明】
【図1】本発明の一実施の形態であるマウント用基板を示す概略平面図である。
【図2】図1におけるA−A矢視断面を示す概略断面図である。
【図3】図2の一部を拡大して示す概略断面図である。
【図4】本発明の他の実施の形態であるマウント用基板を示す概略断面図である。
【図5】本発明の他の実施の形態であるマウント用基板を用いた半導体装置を示す概略断面図である。
【図6】本発明の他の実施の形態であるマウント用基板を用いた半導体チップの評価方法および評価装置を説明するための概略断面図である。
【符号の説明】
1 配線ベース
2 フレキシブル導電性体
3 配線層
4 絶縁膜
5 電極
6 外部電極
7 絶縁性弾性部材
8 絶縁層
9 導電性細線
10 電極
11 導電性部材
12 LSIチップ
13 電極
14 放熱フィン
15 接続材
16 配線ベース
17 電極
18 保持部材
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a mounting substrate, a semiconductor device using the same, a semiconductor chip evaluation method, and a semiconductor chip evaluation device, and more particularly, a semiconductor in which a plurality of semiconductor chips are electrically connected to a multi-pin mounting substrate. The present invention relates to a semiconductor chip evaluation method and a semiconductor chip evaluation apparatus capable of collectively evaluating an apparatus and a plurality of semiconductor chips.
[0002]
[Prior art]
Recently, a semiconductor device such as an LSI (Large Scale Integrated Circuit) has used an evaluation wiring board corresponding to each evaluation method for evaluation methods such as testing, inspection, and aging of the LSI chip. Various mounting substrates are used for mounting.
[0003]
By the way, the present inventor has studied an evaluation method such as a burn-in test of an LSI chip and an LSI chip mounting substrate. The following is a technique studied by the present inventor, and its outline is as follows.
[0004]
That is, in a burn-in test method for performing LSI evaluation, a test substrate called a baby board is provided between an LSI chip and a test pin on a test auxiliary support substrate. In this case, the baby board is inserted as a mechanical cushioning material.
[0005]
When mounting an LSI chip on a mounting board such as a module, motherboard, daughter board or printed circuit board, the LSI chip is mounted on the mounting board by directly fixing the LSI chip electrodes to the mounting board. are doing.
[0006]
In addition, as a document describing an evaluation technique for inspecting a semiconductor integrated circuit device, for example, it is described in “Monthly Semiconductor World September 1994” p72 to p76 issued on August 20, 1994, published by Press Journal, Inc. There is something that is.
[0007]
[Problems to be solved by the invention]
However, the above-described baby board is used when individual LSI chips are individually tested, and is removed from the LSI chip when mounted on the system thereafter. Therefore, there is a problem that a large number of baby boards are required because one baby board is used for each LSI chip only at the time of the individual unit test of the LSI chip. In addition, since it is necessary to use baby boards having various aspects corresponding to various LSI chips, a large number of baby boards having various aspects are required according to the number of various LSI chips to be tested. As a result, the cost for testing increases, which hinders the reduction of the manufacturing cost of the semiconductor device.
[0008]
On the other hand, when the above-mentioned LSI chip electrode is directly fixed to the mounting substrate, the mounting substrate is not elastic, so that the LSI chip electrode is deformed abnormally or the LSI chip electrode is not mounted on the mounting substrate. When electrically connected to the electrode, there is a problem that reliability and electrical characteristics are deteriorated upon connection.
[0009]
An object of the present invention is to provide a mounting substrate having excellent reliability and electrical characteristics in electrical connection with a semiconductor chip such as an LSI chip and a semiconductor device using the same.
[0010]
Another object of the present invention is to provide a semiconductor chip evaluation method and evaluation apparatus capable of simultaneously evaluating a large number of semiconductor chips with high reliability.
[0011]
The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.
[0012]
[Means for Solving the Problems]
Of the inventions disclosed in this application, the outline of typical ones will be briefly described as follows.
[0013]
That is, (1). The mounting substrate of the present invention is capable of electrically connecting a plurality of semiconductor chips, wherein the flexible conductive body is electrically connected to the upper surface of the wiring base, and the flexible conductive body is silicone. Insulating layers are provided on the top and bottom surfaces of an insulating elastic member having elasticity such as rubber, and conductive thin wires such as gold wires are embedded in a plurality of through holes formed in the insulating elastic member and the insulating layer. In addition, an electrode electrically connected to the conductive thin wire is formed on the upper surface of the flexible conductive body.
[0014]
(2). In the semiconductor device of the present invention, electrodes on a semiconductor chip such as a plurality of LSI chips are fixed to the electrodes on the upper surface of the mounting substrate of (1).
[0015]
(3). In the semiconductor chip evaluation method of the present invention, the electrodes of the plurality of semiconductor chips are electrically connected to the electrodes on the upper surface of the mounting substrate in (1), and then the plurality of semiconductor chips are evaluated using the mounting substrate. And a step of removing the semiconductor chip from the mounting substrate after the evaluation.
[0016]
(4). The semiconductor chip evaluation apparatus according to the present invention is incorporated in the evaluation apparatus in a state in which the electrodes of the plurality of semiconductor chips are electrically connected to the electrodes on the upper surface of the mounting substrate of (1), and the mounting substrate is used. A plurality of semiconductor chips are evaluated simultaneously.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description will be omitted.
[0018]
(Embodiment 1)
FIG. 1 is a schematic plan view showing a mounting substrate according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view showing a cross section taken along line AA in FIG. FIG. 3 is a schematic sectional view showing a part of FIG. 2 in an enlarged manner. The mounting substrate of the present invention will be specifically described with reference to FIG.
[0019]
In the mounting substrate of the present embodiment, the flexible conductive body 2 is electrically connected to the upper surface of the wiring base 1.
[0020]
The wiring base 1 is formed of a multilayer wiring layer 3 with an insulating film 4 interposed therebetween. The wiring layer 3 is made of, for example, aluminum, and the insulating film 4 is made of, for example, ceramics. An electrode 5 such as a pad that is electrically connected to the flexible conductive body 2 is provided on the upper surface of the wiring base 1, and an external electrode 6 such as a pin is provided on the lower surface. In addition, as an aspect of the wiring base 1, those of the prior art used as various wiring boards on which various packages or semiconductor chips of a semiconductor device are mounted can be applied.
[0021]
The flexible conductive body 2 has an insulating elastic member 7 made of insulating rubber such as silicone rubber, and an insulating layer 8 such as a polyimide layer on the upper and lower surfaces thereof, and the insulating elastic member 7 and insulating layer 8. A plurality of through holes are formed, and conductive thin wires 9 such as gold wires or brass wires plated with gold are embedded in the through holes. Electrodes 10 such as gold flat pads or gold bumps electrically connected to the conductive thin wires 9 are formed on the upper and lower surfaces of the flexible conductive body 2. The electrodes 10 on the upper surface of the flexible conductive body 2 of the present embodiment are arranged so as to be electrically connected to, for example, the electrodes of 16 LSI chips. The electrode 10 on the lower surface of the flexible conductive body 2 may be removed according to design specifications, and the conductive thin wire 9 exposed on the lower surface may be directly connected to the electrode 5 on the upper surface of the wiring base 1. it can. The electrode 10 of the flexible conductive body 2 adopts various modes according to design specifications such as a bump structure or a flat pad structure on both sides, or a bump structure on one side and a flat pad structure on the other side. can do.
[0022]
The insulating elastic member 7 has a thickness of about 1 mm, the insulating layer 8 has a thickness of about 25 μm, and the insulating elastic member 7 is sandwiched between the insulating layers 8. Further, the plurality of through holes in the insulating elastic member 7 are formed to be inclined with respect to the upper surface of the insulating elastic member 7 (for example, inclined at 45 degrees with respect to the upper surface in the present embodiment). The conductive thin wire 9 is embedded in the inside.
[0023]
The plurality of through holes in the insulating layer 8 of the present embodiment are formed at the same time as the insulating elastic member 7 and are inclined with respect to the upper surface of the insulating layer 8 (for example, 45 ° with respect to the upper surface in the present embodiment). ), And the conductive fine wire 9 is embedded in the through hole. As an aspect of the plurality of through holes in the insulating layer 8, the conductive layer is formed by a process different from that of the insulating elastic member 7, formed perpendicular to the upper surface of the insulating layer 8, and embedded in the through holes. It can be set as various aspects, such as what electrically connected the electroconductive fine wire 9 embedded in the insulating elastic member 7 to the member.
[0024]
The mounting substrate of the present embodiment is connected to the electrode 10 on the upper surface of the flexible conductive body 2 by electrically connecting the flexible conductive body 2 having the insulating elastic member 7 to the upper surface of the wiring base 1. For example, when an electrode in a semiconductor chip such as an LSI chip is fixed, even if a load is applied to the flexible conductive body 2 from the outside, the stress applied to both electrodes and the force applied to the connection direction can be reduced. Further, the conductive thin wire 9 embedded in the insulating elastic member 7 in the flexible conductive body 2 is provided with an inclination with respect to the upper surface of the flexible conductive body 2, so that a load is applied from the outside. Moreover, it can prevent that the electroconductive thin wire 9 cut | disconnects.
[0025]
As a result, the electrodes can be reliably connected with high accuracy, so that the reliability and electrical characteristics of the connection between the two electrodes can be improved.
[0026]
In addition, since the mounting substrate according to the present embodiment can shorten the pitch of the electrodes 10 on the upper surface of the flexible conductive body 2, it can be a micro-processed short pitch electrode 10 and can be electrically It is possible to increase the number of pins of the wiring base 1 while improving the characteristic. Therefore, according to the mounting substrate of the present embodiment, it is possible to promote the increase in the number of pins that are electrodes of a semiconductor chip such as an LSI chip mounted thereon, the reduction in pitch between the pins, and the high integration. Can do.
[0027]
(Embodiment 2)
FIG. 4 is a schematic sectional view showing a mounting substrate according to another embodiment of the present invention.
[0028]
In the mounting substrate of the present embodiment, the flexible conductive body 2 having the conductive thin wires 9 spirally wound on the upper surface of the wiring base 1 of the first embodiment is electrically connected.
[0029]
The flexible conductive body 2 of the present embodiment has an insulating elastic member 7 and an insulating layer 8 on the upper and lower surfaces thereof, and is embedded in a through hole formed perpendicular to the upper surface of the insulating layer 8. The electrically conductive member 11 and the electrically conductive thin wire 9 embedded in the insulating elastic member 7 are electrically connected, and the electrically conductive thin wire 9 is spirally wound. Since the conductive thin wire 9 has a spring function, the elasticity of the conductive thin wire 9 can be increased.
[0030]
The mounting substrate according to the present embodiment has the same structure as that of the first embodiment described above when the electrode in a semiconductor chip such as an LSI chip is fixed to the electrode 10 on the upper surface of the flexible conductive body 2. Even if a load is applied from the outside, the stress applied to both electrodes and the force applied in the connecting direction can be relaxed. Moreover, since the conductive thin wire 9 embedded in the insulating elastic member 7 in the flexible conductive body 2 is spirally wound, the conductive thin wire 9 has a spring function. The elasticity of the conductive thin wire 9 can be increased, and the conductive thin wire 9 can be prevented from being cut even when a load is applied from the outside.
[0031]
As a result, the electrodes can be reliably connected with high accuracy, so that the reliability and electrical characteristics of the connection between the two electrodes can be improved.
[0032]
(Embodiment 3)
FIG. 5 is a schematic cross-sectional view showing a semiconductor device using a mounting substrate according to another embodiment of the present invention.
[0033]
In the semiconductor device of the present embodiment, 16 LSI chips 12 are fixed on the upper surface of the mounting substrate of the first embodiment described above.
[0034]
That is, in the semiconductor device of the present embodiment, the electrodes 13 such as solder bumps of the LSI chips 12 are electrically connected to the electrodes 10 on the upper surface of the mounting substrate of the first embodiment described above, and each LSI chip is connected. After fixing 12 to the electrode 10 on the upper surface of the mounting substrate, the radiation fins 14 are installed on the upper surface of each LSI chip 12 using the connecting material 15.
[0035]
In the semiconductor device of the present embodiment, a plurality of LSI chips 12 are fixed to the upper surface of the mounting substrate of the first embodiment described above, so that the LSI chip 12 is connected to the electrode 10 on the upper surface of the flexible conductive body 2. When the electrode 13 is fixed, even if a load is applied to the flexible conductive body 2 from the outside, the stress applied to both electrodes and the force applied to the connection direction can be relaxed.
[0036]
As a result, the connection between the electrode 10 on the upper surface of the flexible conductive body 2 and the electrode 13 of the LSI chip 12 can be performed reliably and with high accuracy, so that the reliability and electrical characteristics of the connection between both electrodes are improved. Can be made.
[0037]
As another aspect of the semiconductor device of the present embodiment, even if a plurality of LSI chips 12 are fixed to the upper surface of the mounting substrate of the second embodiment, the same as the semiconductor device of the present embodiment described above. Effects can be obtained.
[0038]
Further, as a mode of fixing a plurality of semiconductor chips such as LSI chips 12 on the upper surface of the mounting substrate, a multi-pin MCC (Micro Carrier for LSI Chip) pad, a multi-pin CCB (Controlled Collapse Bonding) pad, or a TAB (Tape) is used. Semiconductor chips such as LSI chips having various electrode structures such as electrodes for Automated Bonding can be applied. In addition to being applicable to modules, motherboards, daughter boards or printed circuit boards, the wiring base 1 of the mounting board can be applied to various package structures such as BGA (Ball Grid Array) or PGA (Pin Grid Array). In addition, a semiconductor device such as an LSI formed into a multichip module can be obtained.
[0039]
(Embodiment 4)
FIG. 6 is a schematic cross-sectional view for explaining a semiconductor chip evaluation method and a semiconductor chip evaluation apparatus using a mounting substrate according to another embodiment of the present invention.
[0040]
The semiconductor chip evaluation method according to the present embodiment will be described. The electrode 17 on the upper surface of the wiring base 16 to which a test board called a baby board is applied is applied to the lower surface of the flexible conductive body 2 according to the first embodiment. After placing the electrode 10, the electrode 13 of the LSI chip 12 to which the radiation fins 14 are attached is disposed on the electrode 10 on the upper surface of the flexible conductive body 2. Thereafter, the LSI chip 12, the flexible conductive body 2, and the wiring base 16 are positioned and fixed by the holding member 18. In this case, the holding member 18 performs three-way positioning by sandwiching the LSI chip 12, the flexible conductive body 2, and the wiring base 16, and is fixed in a detachable state.
[0041]
Next, in this state, a plurality of LSI chips 12 are incorporated into an evaluation apparatus such as a burn-in apparatus, and a screening test or the like is performed to evaluate the plurality of LSI chips 12 simultaneously. After the evaluation, the LSI chip 12 and the like are taken out from the evaluation device, and the holding member 18 is removed from the LSI chip 12 and the like, thereby completing the evaluation process of the LSI chip 12.
[0042]
According to the semiconductor chip evaluation method of the present embodiment, the upper surface of the flexible conductive body 2 is obtained by electrically connecting the flexible conductive body 2 of the first embodiment described above to the upper surface of the wiring base 16. When the electrodes 13 of the plurality of LSI chips 12 are arranged on the electrodes 10, even if a load is applied to the flexible conductive body 2 from the outside, the stress applied to both electrodes and the force applied to the connection direction can be reduced. . As a result, the electrodes can be reliably connected with high accuracy, so that the reliability and electrical characteristics of the connection between the two electrodes can be improved.
[0043]
Further, according to the semiconductor chip evaluation method of the present embodiment, a plurality of LSI chips 12, the flexible conductive body 2, and the wiring base 16 are positioned and fixed by the holding member 18, and a plurality of LSI chips 12, the flexible conductive body 2, and the wiring base 16 are positioned. By evaluating the LSI chips 12 simultaneously, it is possible to easily evaluate a large number of LSI chips 12 simultaneously. In addition, when the electrodes 13 of the LSI chip 12 and the wiring base 16 to which the test substrate is applied are connected, it is not necessary to perform solder reflow, flux cleaning, or the like. It is possible to easily connect and detach the wiring base 16 to which the above is applied. As a result, it is possible to easily evaluate a large number of LSI chips 12 with high reliability at the same time, and to reduce the manufacturing cost of the semiconductor device.
[0044]
According to the semiconductor chip evaluation apparatus of the present embodiment, since the above-described semiconductor chip evaluation method is applied, a large number of LSI chips 12 can be simultaneously evaluated with high reliability. In this case, the manufacturing cost of the semiconductor device can be reduced.
[0045]
In addition, according to the semiconductor chip evaluation method and evaluation apparatus of the present embodiment, electrical connection and removal of a large number of LSI chips 12 and a wiring base 16 to which a test substrate is applied using the holding member 18 are easily performed. be able to. As a result, it is possible to easily perform selection according to the evaluation results of a large number of LSI chips 12 after evaluation, re-evaluation operation of the LSI chips 12, replacement work of the LSI chips 12, and the like. In addition, the wiring base 16 and the flexible conductive body 2 can be easily corrected or repaired. Therefore, the cost for evaluating the semiconductor chip can be reduced, and as a result, the manufacturing cost of the semiconductor device can be reduced.
[0046]
As mentioned above, the invention made by the present inventor has been specifically described based on the embodiments of the invention. However, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say.
[0047]
For example, as the wiring base 1 in the mounting substrate of the present invention, various wiring bases such as a wiring board in various packages on which a semiconductor device is mounted or a test substrate used when performing various evaluations such as tests or inspections are applied. can do.
[0048]
The insulating elastic member 7 in the mounting substrate of the present invention can be made of an insulating material such as polyimide resin or various polymers, in addition to insulating rubber such as silicone rubber.
[0049]
Furthermore, in the semiconductor device using the mounting substrate of the present invention, various accessory parts such as a cooling jacket can be installed in addition to the heat radiating fins 14 installed on the LSI chip 12 fixed to the mounting substrate. . The semiconductor device using the mounting substrate according to the present invention may have a mode in which a semiconductor chip or the like used in a circuit system such as a mainframe or workstation in a computer, a personal computer, or a communication device is mounted on the mounting substrate. .
[0050]
【The invention's effect】
Of the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.
[0051]
(1). According to the mounting substrate of the present invention, the electrode on the semiconductor chip is connected to the electrode on the upper surface of the flexible conductive body by electrically connecting the flexible conductive body having the insulating elastic member to the upper surface of the wiring base. When fixing, even if a load is applied to the flexible conductive body from the outside, the stress applied to both electrodes and the force applied to the connection direction can be alleviated. In addition, the conductive thin wire embedded in the insulating elastic member in the flexible conductive body is inclined with respect to the upper surface of the flexible conductive body or spirally wound so that a load is applied from the outside. Even if it takes, it can prevent that a conductive fine wire cuts. As a result, the electrodes can be reliably connected with high accuracy, so that the reliability and electrical characteristics of the connection between the two electrodes can be improved.
[0052]
(2). According to the mounting substrate of the present invention, since the pitch of the electrodes on the upper surface of the flexible conductive material can be shortened, it is possible to obtain a micro-processed short pitch electrode and to improve the electrical characteristics. In this state, it is possible to increase the number of pins on the wiring base. Therefore, according to the mounting substrate of the present embodiment, it is possible to promote the increase in the number of pins that are electrodes of a semiconductor chip such as an LSI chip mounted thereon, the reduction in pitch between the pins, and the high integration. Can do.
[0053]
(3). According to the semiconductor device such as the semiconductor integrated circuit device of the present invention, the semiconductor chip such as a plurality of LSI chips is fixed to the upper surface of the mounting substrate, so that the electrode on the upper surface of the flexible conductive body is connected to the semiconductor chip. When the electrodes are fixed, even if a load is applied to the flexible conductive body from the outside, the stress applied to both electrodes and the force applied to the connection direction can be alleviated. As a result, since the connection between the electrode on the upper surface of the flexible conductive body and the electrode of the semiconductor chip can be performed reliably and with high precision, the reliability and electrical characteristics of the connection between both electrodes can be improved. .
[0054]
(4). According to a semiconductor device such as a semiconductor integrated circuit device of the present invention, a semiconductor chip such as a plurality of LSI chips is fixed on the upper surface of a mounting substrate, so that a multi-pin MCC pad, a multi-pin CCB pad or Semiconductor chips such as LSI chips having various electrode structures such as TAB electrodes can be applied. Further, as a wiring base for a mounting substrate, it can be applied to modules, motherboards, daughter boards, printed boards, and the like, and can also be applied to various package structures such as BGA or PGA. It can be.
[0055]
(5). According to the semiconductor chip evaluation method of the present invention, the electrodes in the plurality of LSI chips are arranged on the electrodes on the upper surface of the flexible conductive body by electrically connecting the flexible conductive body to the upper surface of the wiring base. At this time, even if a load is applied to the flexible conductive body from the outside, the stress applied to both electrodes and the force applied to the connecting direction can be reduced. As a result, the electrodes can be reliably connected with high accuracy, so that the reliability and electrical characteristics of the connection between the two electrodes can be improved.
[0056]
(6). According to the semiconductor chip evaluation method of the present invention, a plurality of LSI chips, a flexible conductive material, and a wiring base are positioned and fixed with a holding member, and a plurality of LSI chips are simultaneously evaluated. As a result, it is possible to easily evaluate a large number of LSI chips simultaneously. In addition, it is not necessary to perform solder reflow or flux cleaning when connecting the LSI chip electrodes to the wiring base to which the test board is applied, and the wiring base to which a large number of LSI chips and the test board are applied using a holding member. Can be easily connected and detached. As a result, it is possible to easily evaluate a large number of LSI chips with high reliability at the same time, and to reduce the manufacturing cost of the semiconductor device.
[0057]
(7). According to the semiconductor chip evaluation apparatus of the present invention, since the above-described semiconductor chip evaluation method is applied, a large number of LSI chips can be simultaneously evaluated with high reliability. In this case, the manufacturing cost of the semiconductor device can be reduced.
[0058]
(8). According to the semiconductor chip evaluation method and evaluation apparatus of the present invention, it is possible to easily connect and detach and connect a wiring base to which a large number of LSI chips and a test substrate are applied using a holding member. As a result, selection according to the evaluation results of a large number of LSI chips after evaluation, re-evaluation operation of LSI chips, replacement work of LSI chips, and the like can be easily performed. In addition, the wiring base and the flexible conductive body can be easily corrected or repaired. Therefore, the cost for evaluating the semiconductor chip can be reduced, and as a result, the manufacturing cost of the semiconductor device can be reduced.
[Brief description of the drawings]
FIG. 1 is a schematic plan view showing a mounting substrate according to an embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view showing a cross section taken along the line AA in FIG. 1;
FIG. 3 is a schematic sectional view showing a part of FIG. 2 in an enlarged manner.
FIG. 4 is a schematic sectional view showing a mounting substrate according to another embodiment of the present invention.
FIG. 5 is a schematic cross-sectional view showing a semiconductor device using a mounting substrate according to another embodiment of the present invention.
FIG. 6 is a schematic cross-sectional view for explaining a semiconductor chip evaluation method and evaluation apparatus using a mounting substrate according to another embodiment of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Wiring base 2 Flexible electroconductive body 3 Wiring layer 4 Insulating film 5 Electrode 6 External electrode 7 Insulating elastic member 8 Insulating layer 9 Conductive thin wire 10 Electrode 11 Conductive member 12 LSI chip 13 Electrode 14 Radiation fin 15 Connecting material 16 Wiring Base 17 Electrode 18 Holding member

Claims (6)

複数の半導体チップを電気的に接続するフレキシブル導電性体が配線ベースの上面に電気的に接続されたマウント用基板であって、前記フレキシブル導電性体は、絶縁性弾性部材の上面および下面に絶縁層が設けられていると共に、前記絶縁性弾性部材および前記絶縁層に形成されている複数の貫通穴に導電性細線が埋め込まれており、前記フレキシブル導電性体の上面には前記導電性細線と電気的に接続された電極が形成され、前記導電性細線は、前記絶縁性弾性部材の上面に対し傾斜していることを特徴とするマウント用基板。A mounting substrate in which a flexible conductive body for electrically connecting a plurality of semiconductor chips is electrically connected to an upper surface of a wiring base, wherein the flexible conductive body is insulated from the upper surface and the lower surface of an insulating elastic member. A conductive thin wire is embedded in a plurality of through holes formed in the insulating elastic member and the insulating layer, and the conductive thin wire is formed on an upper surface of the flexible conductive body. An electrically connected electrode is formed, and the conductive thin wire is inclined with respect to the upper surface of the insulating elastic member . 複数の半導体チップを電気的に接続するフレキシブル導電性体が配線ベースの上面に電気的に接続されたマウント用基板であって、前記フレキシブル導電性体は、絶縁性弾性部材の上面および下面に絶縁層が設けられていると共に、前記絶縁性弾性部材および前記絶縁層に形成されている複数の貫通穴に導電性細線が埋め込まれており、前記フレキシブル導電性体の上面には前記導電性細線と電気的に接続された電極が形成され、前記導電性細線は、螺旋状に卷かれていることを特徴とするマウント用基板。A mounting substrate in which a flexible conductive body for electrically connecting a plurality of semiconductor chips is electrically connected to an upper surface of a wiring base, wherein the flexible conductive body is insulated from the upper surface and the lower surface of an insulating elastic member. A conductive thin wire is embedded in a plurality of through holes formed in the insulating elastic member and the insulating layer, and the conductive thin wire is formed on an upper surface of the flexible conductive body. An electrically connected electrode is formed, and the conductive thin wire is spirally wound. 請求項1または2記載のマウント用基板において、前記フレキシブル導電性体の下面に前記導電性細線と電気的に接続された電極が形成されていることを特徴とするマウント用基板。 3. The mounting substrate according to claim 1, wherein an electrode electrically connected to the conductive thin wire is formed on a lower surface of the flexible conductive body. 請求項1〜のいずれか1項に記載のマウント用基板において、前記絶縁性弾性部材は絶縁性ゴムであり、前記絶縁層はポリイミドからなることを特徴とするマウント用基板。The mounting substrate according to any one of claims 1 to 3 , wherein the insulating elastic member is an insulating rubber, and the insulating layer is made of polyimide. 請求項1〜のいずれか1項に記載のマウント用基板の上面の電極に半導体チップの電極が固定されていることを特徴とする半導体装置。Wherein a semiconductor chip electrode is fixed to the electrode of the upper surface of the mounting board according to any one of claims 1-4. 請求項1〜のいずれか1項に記載のマウント用基板の上面の電極に半導体チップの電極を電気的に接続する工程と、前記マウント用基板を用いて前記半導体チップの評価を行う工程と、評価後、前記マウント用基板から前記半導体チップを取り除く工程とを有することを特徴とする半導体チップの評価方法。A step of electrically connecting an electrode of a semiconductor chip to an electrode on an upper surface of the mounting substrate according to any one of claims 1 to 4 , a step of evaluating the semiconductor chip using the mounting substrate, And a step of removing the semiconductor chip from the mounting substrate after the evaluation.
JP05631596A 1996-03-13 1996-03-13 Mounting substrate, semiconductor device using the same, and semiconductor chip evaluation method Expired - Fee Related JP3707857B2 (en)

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