WO2023074052A1 - 成膜方法 - Google Patents

成膜方法 Download PDF

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Publication number
WO2023074052A1
WO2023074052A1 PCT/JP2022/026796 JP2022026796W WO2023074052A1 WO 2023074052 A1 WO2023074052 A1 WO 2023074052A1 JP 2022026796 W JP2022026796 W JP 2022026796W WO 2023074052 A1 WO2023074052 A1 WO 2023074052A1
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Prior art keywords
target
targets
substrate
film
power
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PCT/JP2022/026796
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English (en)
French (fr)
Japanese (ja)
Inventor
祐輔 氏原
具和 須田
正樹 長谷川
礼寛 横山
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株式会社アルバック
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Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Priority to KR1020247003708A priority Critical patent/KR20240028482A/ko
Priority to JP2023556123A priority patent/JPWO2023074052A1/ja
Priority to CN202280065462.4A priority patent/CN118019875A/zh
Publication of WO2023074052A1 publication Critical patent/WO2023074052A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Definitions

  • the present invention relates to a film formation method, and more particularly to a method for forming a high-melting-point metal film on a large-area substrate by a sputtering method.
  • liquid crystal displays for example, there is a process of forming a thin film of a high melting point metal such as molybdenum or tungsten on a substrate.
  • a highly productive magnetron type sputtering apparatus is used for forming the high-melting-point metal film.
  • a plurality of targets each made of the same high-melting-point metal and having a rectangular shape in plan view are arranged side by side in a vacuum processing chamber.
  • a substrate having an area is arranged to face each target, and a sputter power supply is used to apply power to each target to perform sputtering while a leakage magnetic field is applied to the substrate side of each target, and sputtered particles are formed on the surface of the substrate facing each target.
  • a sputter power supply is used to apply power to each target to perform sputtering while a leakage magnetic field is applied to the substrate side of each target, and sputtered particles are formed on the surface of the substrate facing each target.
  • Japanese Patent Laid-Open Publication No. 2002-300000 discloses a method in which each target is integrally reciprocated parallel to the substrate at a constant speed during film formation by sputtering of the targets.
  • the moving direction is the direction in which the targets are arranged side by side, and the targets are reciprocated together in parallel with the substrate during film formation to change the region where the sputtered particles are not emitted, thereby changing the film thickness distribution. While improving non-uniformity, this increases the difference in stress in the refractory metal film between the central and peripheral regions of the substrate.
  • a method for forming a high-melting-point metal film that can minimize such a stress difference is known, for example, in Patent Document 2.
  • the targets facing each other in the target arrangement direction of the substrate are used as starting targets, the starting targets and the targets located outside the starting targets in the target arrangement direction are set as the first target group, and the targets are set from the starting targets.
  • Targets positioned inward in the direction of parallel arrangement are defined as a second target group, power supplied to each target of the first target group by the sputtering power supply is defined as steady power, and power higher than the steady power (power twice the steady power) is set. Control is performed so that power is applied to each target of the second target group.
  • a cylindrical target formed in a cylindrical shape may be used instead of the rectangular target in plan view (so-called rotary cathode).
  • the area of the sputtered target is small, so the amount of sputtered particles scattered per unit time is smaller than that of a rectangular target in plan view. Therefore, in order to increase the film formation rate, the electric power supplied to the cylindrical target must be increased.
  • each target of the second target group must be supplied with twice as much power as that of the first target group.
  • a high-output sputtering power source for the target is required, which not only leads to an increase in cost, but also causes problems such as melting and cracking of the target due to insufficient cooling of the target.
  • JP 2010-236051 A Japanese Patent No. 6588351
  • At least three targets each made of the same high-melting-point metal are arranged side by side in a vacuum processing chamber, and a substrate having an area smaller than the area where each target is arranged side by side is opposed to each target.
  • a high melting point metal film is formed on the surface of the substrate facing each target by applying power to each target from a sputtering power source to form a film on the surface of the substrate facing each target.
  • Targets whose outer edges are opposed to each other are used as starting targets, targets positioned outside the starting target and the direction in which the targets are arranged are the first target group, and targets positioned inside the direction in which the targets are arranged are the second group.
  • the targets arranged side by side in the same plane at intervals are used as cylindrical targets formed in a cylindrical shape, and the cylindrical targets are sputtered to form a refractory metal film, the cylindrical targets are simultaneously sputtered with the same power, the refractory metal film in the central region of the substrate tends to have a strong tensile stress, while the refractory metal film in the four corners of the substrate has a strong tendency to have a compressive stress.
  • the difference in stress between the central region and the peripheral region increased (Note that the central region of the substrate does not indicate tensile stress, even if the value is compressive stress.
  • each target of the second target group is sputtered to form a high melting point metal film on the central region of the substrate (that is, at the beginning of film formation, each target of the first target group
  • the high-melting-point metal film is preferentially formed in the central region of the substrate by sputtering only each target of the second target group without sputtering the target, thereby forming a dense high-melting-point metal film in the central region. film.
  • each target of the first target group is sputtered to form a similarly dense refractory metal film on the peripheral region of the substrate.
  • the high-melting-point metal film is formed separately in the central region and the peripheral region of the substrate (that is, with a time difference), so that only each target in the second target group is subjected to high power. Since it is unnecessary to turn on the target, the same sputtering power source can be used for each target of the first target group and the second target group, and moreover, melting and cracking of the targets due to insufficient cooling can be hardly induced. , is advantageous.
  • the refractory metal film is formed separately in the central region and the peripheral region of the substrate, depending on the thickness of the refractory metal film to be formed on the film formation surface of the substrate and the input power, all targets The sputtering time is longer than in the case where the same amount of power is applied simultaneously to both, which may reduce productivity.
  • a configuration may be adopted that further includes the step of applying power to each of the targets of the first target group at a second power lower than the first power until power application to each of the targets of the second target group is stopped. .
  • the film formation on the peripheral region of the substrate can be partly brought forward within a range that does not hinder the formation of the dense refractory metal film on the central region of the substrate, which is advantageous because the film formation time can be shortened.
  • the second electric power and the timing of applying the second electric power are appropriately set within a range in which a dense high-melting-point metal film can be formed in the central region.
  • the target is a cylindrical target formed in a cylindrical shape, and while each cylindrical target is powered by the sputtering power source, each cylindrical target is rotated about its axis, and each cylindrical target is rotated.
  • adopting a configuration further including a step of reciprocating the stray magnetic field acting on the substrate side of each cylindrical target by a magnet unit assembled in the cylindrical target within a predetermined angle range with respect to a reference line orthogonal to the axis line. can be done. According to this, it was confirmed that a refractory metal film having a smaller stress difference between the central region and the peripheral region of the substrate can be formed.
  • FIG. 1 is a schematic cross-sectional view of a magnetron sputtering apparatus capable of carrying out a film forming method according to an embodiment of the present invention
  • FIG. 2 is a sectional view showing an enlarged part of the rotary cathode shown in FIG. 1
  • 4 is a timing chart showing the timing of power supply to each target
  • (a) and (b) are timing charts showing the timing of power supply to each target according to the modification.
  • the target is a cylindrical target made of molybdenum and the substrate is a glass substrate having a rectangular outline and a predetermined thickness (hereinafter referred to as “substrate Sw”), and magnetron sputtering is performed.
  • substrate Sw a glass substrate having a rectangular outline and a predetermined thickness
  • An embodiment of the film forming method of the present invention will be described by taking as an example a case where a molybdenum film is formed on one surface of a substrate by .
  • terms indicating directions such as up and down are based on FIG.
  • the vertical direction orthogonal to the axial direction and the X-axis direction is defined as the Z-axis direction.
  • the sputtering apparatus Sm includes a vacuum chamber 1 defining a vacuum processing chamber 1a.
  • a vacuum pump 2 is connected to the vacuum chamber 1 through an exhaust pipe 21, and the vacuum processing chamber 1a can be evacuated to a predetermined pressure (eg, 1 ⁇ 10 ⁇ 5 Pa).
  • a substrate transfer device 3 is provided below the vacuum chamber 1 .
  • the substrate conveying device 3 has a carrier 31 that holds the substrate Sw with the upper surface of the substrate Sw as a film forming surface opened. can be transported to a film forming position facing the . Since a known device can be used as the substrate transfer device 3, further explanation will be omitted.
  • the vacuum chamber 1 is also provided with gas introduction means 4 .
  • the gas introduction means 4 communicates with a gas source (not shown) through a gas pipe 42 interposed with a mass flow controller 41, and can introduce a sputtering gas into the vacuum processing chamber 1a at a predetermined flow rate.
  • the sputtering gas includes not only rare gases such as argon gas for forming a plasma atmosphere, but also reactive gases such as oxygen gas and nitrogen gas used in reactive sputtering.
  • a cathode unit Cu is provided in the upper part of the vacuum chamber 1 so as to face the substrate Sw transported to the film forming position shown in FIG.
  • the cathode unit Cu comprises a plurality of cylindrical targets 5 (5a to 5h) having the same structure and magnet units 6 assembled therein.
  • Each cylindrical target 5 is made of molybdenum as a high-melting-point metal and formed into a cylindrical shape by a known method.
  • the cylindrical targets 5 are arranged side by side in the vacuum chamber 1 with the longitudinal direction aligned with the direction orthogonal to the X-axis direction and with a predetermined interval in the X-axis direction (for example, at equal intervals). be done.
  • each cylindrical target 5 is set to be longer than the width of the substrate Sw (the length in the direction orthogonal to the X-axis direction), and the number of cylindrical targets 5 arranged side by side is are at least three or more and are appropriately set according to the length of the substrate Sw (the length in the X-axis direction).
  • cylindrical targets 5a and 5b are provided above both outer edges of the substrate Sw in the X-axis direction.
  • four cylindrical targets 5e to 5h are provided inside the starting point targets 5a and 5b in the X-axis direction, respectively. .
  • the substrate Sw having an area smaller than the area where the targets 5a to 5h are arranged side by side is concentrically arranged opposite to the area.
  • the origin targets 5a and 5b and the cylindrical targets 5c and 5d on the outer side in the X-axis direction are referred to as a first target group 50a
  • the other cylindrical targets 5e to 5h are referred to as a second target group 50b.
  • a driving block 51 and a driven block are attached to both ends of each cylindrical target 5 in the longitudinal direction, so that each cylindrical target 5 can be rotationally driven around its axis at a predetermined number of rotations. .
  • a known structure can be used, so further explanation is omitted.
  • Each cylindrical target 5 is connected to a sputtering power supply 7 arranged outside the vacuum chamber 1 , and DC power having a negative potential is applied to each cylindrical target 5 . Alternating current power may be applied to each pair of cylindrical targets 5 .
  • a line passing through the position where the vertical component of the magnetic field is zero in the space between the cylindrical target 5 and the substrate Sw extends along the generatrix of the cylindrical target 5.
  • a leakage magnetic field leaking from the surface of the cylindrical target 5 is applied so as to close the track, and a support plate (yoke) 61 made of a magnetic material and extending along the longitudinal direction of the cylindrical target 5 is provided.
  • the yoke 61 is composed of a plate-like member made of a magnetic material and having a top surface 61a parallel to the substrate Sw and an inclined surface 61b inclined upward from the top surface 61a.
  • a central magnet 62 is arranged on the top surface 61a of the yoke 61, and peripheral magnets 63 are arranged on both inclined surfaces 61b.
  • corner magnets are provided at both ends of the top surface 61a of the yoke 61 in the generatrix direction so as to surround the ends of the central magnet 62 and bridge the peripheral magnets 63. ) are placed.
  • the central magnet 62, the peripheral magnets 63, and the corner magnets neodymium magnets having the same magnetization are used.
  • a shaft body 64 protrudes from one end face of the yoke 61 on the drive block 51 side along the axis of the cylindrical target 5 , and the shaft body 64 is connected to the drive shaft of the motor Mt arranged in the drive block 51 . ing. With the top surface 61a of the yoke 61 facing downward in the Z-axis direction as a reference position, the magnet unit 6 can be reciprocally rotated at a predetermined speed within an angular range of, for example, ⁇ 30 degrees from the reference position.
  • the sputtering apparatus Sm has a control unit Pu equipped with a microcomputer, a sequencer, and the like, and in addition to controlling each sputtering power supply 7, the mass flow controller 41, the vacuum pump 2, and the motor Mt are centrally controlled.
  • the film forming method of this embodiment using the sputtering apparatus Sm will be described below with reference to FIG.
  • the vacuum processing chamber 1 a is evacuated by the vacuum pump 2 .
  • a predetermined pressure for example, 1 ⁇ 10 ⁇ 5 Pa
  • the control unit Pu introduces argon gas through the gas pipe 42 into the vacuum processing chamber 1a at a predetermined flow rate (vacuum processing chamber 1a pressure is in the range of 0.2 Pa to 2.0 Pa)
  • the targets 5e to 5h of the second target group 50b are supplied with power (for example, 30 kW to 60 kW) at the first power P1 from the respective sputtering power sources 7. .
  • a racetrack-like high-density plasma is generated by the leakage magnetic field acting from the magnet unit 6, for example ⁇ 30 from the reference position.
  • the targets 5e to 5h are sputtered by argon gas ions in the plasma while each magnet unit 6 is reciprocally rotated at a predetermined speed within an angular range of 100 degrees.
  • the sputtered particles scattered from the targets 5e to 5h preferentially adhere to the central region of the substrate Sw (the region equal to or greater than the region where the targets 5e to 5h are arranged side by side), depositing and forming a molybdenum film. (first step).
  • the targets 5a to 5d of the first target group 50a are not sputtered.
  • the molybdenum film to be deposited can be dense (that is, to have the same film quality as that deposited in the peripheral region) and have compressive stress.
  • the time (t1) of the first step is appropriately set according to, for example, the applied power and the thickness of the molybdenum film to be formed on the central region of the substrate Sw.
  • the targets 5a to 5d of the first target group 50a are sputtered.
  • Power is turned on from the power source 7 with the first power P1 equivalent to that in the first step (in this case, the introduction of argon gas is maintained as it is).
  • the plasma generated in the space between the substrate Sw and the targets 5e to 5h of the second target group 50b disappears, and the space between the substrate Sw and the targets 5a to 5d of the first target group 50a , a racetrack-like high-density plasma is generated by the leakage magnetic field acting from the magnet unit 6, respectively.
  • the targets 5a to 5d are sputtered by argon gas ions in the plasma while each magnet unit 6 is reciprocally rotated at a predetermined speed within an angular range of, for example, ⁇ 30 degrees from the reference position.
  • the scattered sputtered particles adhere to and deposit on the peripheral region (region outside the central region) of the substrate Sw to form a molybdenum film (second step).
  • the molybdenum film formed in the peripheral region can be dense and have compressive stress.
  • the time (t2) of the second step is also appropriately set, for example, according to the applied power and the thickness of the molybdenum film to be formed on the peripheral region of the substrate Sw.
  • the first step and the second step can be sequentially repeated multiple times to form the molybdenum film.
  • the molybdenum film is formed in two steps, namely, the first step of forming the film in the central region of the substrate Sw and the second step of forming the film in the peripheral region of the substrate Sw.
  • a molybdenum film having a compressive stress over the entire film formation surface and a stress difference as small as possible can be formed.
  • the same sputtering power source 7 can be used for the targets 5a to 5h of the first target group 50a and the second target group 50b. It is advantageous because melting and cracking are less likely to occur.
  • the first power P1 50 kW was applied to all targets 5a to 5h at the same time, and a molybdenum film was formed in a single step (time of t1+t2). Then, when the stress of the formed molybdenum film was measured at a total of five points in the central portion and the four corners of the substrate Sw, the formed molybdenum film in the central portion of the substrate Sw tended to have a strong tensile stress. On the other hand, it was confirmed that the formed molybdenum film at the measurement points at the four corners of the substrate Sw tends to have a strong compressive stress, and as a result, a maximum stress difference of 878 MPa is generated.
  • the stress of the formed molybdenum film was measured at a total of five points, namely the central portion and the four corners of the substrate Sw. All the films have compressive stress, and the stress difference between the measurement point with the largest compressive stress and the measurement point with the smallest compressive stress is 395 MPa, and it was confirmed that the stress difference can be reduced between the central region and the peripheral region of the substrate Sw. rice field.
  • a molybdenum film was formed by adding a condition in which the magnet unit 6 was reciprocally rotated within a range of ⁇ 30 degrees with respect to the reference line Ls by the motor Mt during the sputtering in the first and second steps.
  • the molybdenum (Mo) cylindrical target 5 is used to form a molybdenum film.
  • the present invention can also be applied when a refractory metal film is formed using a refractory metal target or a tubular target made of an alloy of two or more refractory metals (for example, Mo—W). .
  • a refractory metal film is formed using a refractory metal target or a tubular target made of an alloy of two or more refractory metals (for example, Mo—W).
  • the case of using a cylindrical target has been described as an example, but the present invention can also be applied to the case of using a target that is rectangular in plan view.
  • the second step may be started before the end time t1 of the first step.
  • the start time t1a of the second step may be after the start of the first step, and can be appropriately set within a range that does not hinder the formation of a dense molybdenum film on the central region of the substrate Sw. .
  • FIG. 4A shows that the second step may be started before the end time t1 of the first step.
  • the start time t1a of the second step may be after the start of the first step, and can be appropriately set within a range that does not hinder the formation of a dense molybdenum film on the central region of the substrate Sw.
  • the start time t1b of the second step is made earlier than the time t1a, and the first target group is set between the start time t1b and the end time t1 of the first step
  • a second power P2 smaller than the first power P1 may be applied to each of the targets 5a to 5d of 50a. According to this, it is possible to partially advance the film formation on the peripheral region of the substrate Sw, which is advantageous in that the film formation time can be shortened.
  • the start time t1b of the second step can be, for example, after half of the period of the first step has passed.
  • the substrate Sw performs film formation in a horizontal posture with its film formation surface directed upward in the vertical direction
  • the present invention can also be applied when film formation is performed in a posture (in this case, the respective targets 5a to 5h are arranged in an upright posture with their axial directions aligned with the vertical direction).
  • 1a vacuum processing chamber, Sw... substrate, 5 (5a to 5h).

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
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  • Metallurgy (AREA)
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PCT/JP2022/026796 2021-10-26 2022-07-06 成膜方法 WO2023074052A1 (ja)

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KR1020247003708A KR20240028482A (ko) 2021-10-26 2022-07-06 성막 방법
JP2023556123A JPWO2023074052A1 (ko) 2021-10-26 2022-07-06
CN202280065462.4A CN118019875A (zh) 2021-10-26 2022-07-06 成膜方法

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0364460A (ja) * 1989-07-31 1991-03-19 Hitachi Ltd 薄膜形成装置
JPH10152772A (ja) * 1996-11-22 1998-06-09 Matsushita Electric Ind Co Ltd スパッタリング方法及び装置
JP2017522455A (ja) * 2014-06-23 2017-08-10 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 層を堆積する方法、トランジスタを製造する方法、電子デバイスのための層スタック、及び電子デバイス

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5363166B2 (ja) 2009-03-31 2013-12-11 株式会社アルバック スパッタリング方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0364460A (ja) * 1989-07-31 1991-03-19 Hitachi Ltd 薄膜形成装置
JPH10152772A (ja) * 1996-11-22 1998-06-09 Matsushita Electric Ind Co Ltd スパッタリング方法及び装置
JP2017522455A (ja) * 2014-06-23 2017-08-10 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 層を堆積する方法、トランジスタを製造する方法、電子デバイスのための層スタック、及び電子デバイス

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CN118019875A (zh) 2024-05-10
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JPWO2023074052A1 (ko) 2023-05-04

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