WO2023051766A1 - Solution de placage d'or par électroplacage sans cyanure, application associée, procédé d'électroplacage de perle d'or, perle d'or et composant électronique - Google Patents

Solution de placage d'or par électroplacage sans cyanure, application associée, procédé d'électroplacage de perle d'or, perle d'or et composant électronique Download PDF

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WO2023051766A1
WO2023051766A1 PCT/CN2022/123144 CN2022123144W WO2023051766A1 WO 2023051766 A1 WO2023051766 A1 WO 2023051766A1 CN 2022123144 W CN2022123144 W CN 2022123144W WO 2023051766 A1 WO2023051766 A1 WO 2023051766A1
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Prior art keywords
gold
plating solution
electroplating
arsenic
concentration
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PCT/CN2022/123144
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English (en)
Chinese (zh)
Inventor
任长友
王彤
邓川
刘鹏
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深圳市联合蓝海黄金材料科技股份有限公司
华为技术有限公司
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Publication of WO2023051766A1 publication Critical patent/WO2023051766A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/48—Electroplating: Baths therefor from solutions of gold
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames

Definitions

  • the invention relates to the field of semiconductor gold bump preparation, in particular to a cyanide-free electroplating gold plating solution and its application, a method for making gold bumps by electroplating, gold bumps prepared by the method, and electronic components with the gold bumps.
  • gold is second only to silver and copper in terms of electrical and thermal conductivity. Gold has excellent chemical stability. It will not be oxidized under normal temperature or heating conditions, and it does not react with most chemical substances. It has good solderability and heat resistance. Pressure bonding, low contact resistance. Therefore, gold plating is widely used in electronic circuit boards, electronic connectors, semiconductor manufacturing and other fields.
  • gold is heat treated after electroplating. Since gold is a metal with a low melting point, recrystallization occurs during heat treatment, resulting in larger grain size and lower hardness. According to the hardness of electroplated gold after heat treatment, it can be divided into low hardness (40-60HV), medium hardness (70-90HV), and high hardness (90-120HV) electroplated gold.
  • low hardness 40-60HV
  • medium hardness 70-90HV
  • high hardness 90-120HV
  • the size of the gold bumps and the spacing between the gold bumps is 6 ⁇ m, and the spacing between the bumps is 4 ⁇ m. .
  • the gold bumps are easily deformed during the thermocompression bonding process, resulting in the connection of adjacent bumps, thus resulting in failure of the circuit short circuit.
  • the way to solve this problem is to increase the hardness of the gold bumps and prevent the deformation of the gold bumps during the thermocompression bonding process.
  • the bonding performance of electroplating gold is related to the hardness of electroplating gold. The higher the hardness, the higher the pressure and temperature required in the bonding process. Considering the possible impact on device performance, the hardness of electroplating gold after heat treatment is generally controlled at 120HV the following.
  • the first problem that needs to be solved in cyanide-free gold plating is the stability of the plating solution. At present, this problem has been well solved. If it is reported that adding bipyridine, ethylenediamine, and aromatic nitro compounds can improve the stability of the plating solution. In addition, compared with cyanide gold plating, the hardness of cyanide-free gold plating tends to decrease after heat treatment, making it difficult to prepare high-hardness electroplating gold materials.
  • CN104540983B discloses that the cyanide-free electroplating gold bath contains gold sulfite, conductive salt sulfite and sulfate, crystal regulator thallium compound, on this basis, further Add any one or more of iridium, ruthenium and rhodium compounds, the concentration of which is 1-3000mg/L.
  • the electroplating solution can be used to prepare a gold-plated layer that still maintains high hardness after heat treatment.
  • the use of thallium-containing compounds in the cyanide-free gold plating system often results in a relatively rough coating, and the effective contact area is reduced during thermocompression bonding.
  • the purpose of the present invention is to overcome the low hardness of gold bumps made by using cyanide-free gold plating technology after heat treatment, which is difficult to meet the problem of semiconductor processing requirements, to provide cyanide-free electroplating gold plating solution and its application and the method of electroplating gold bumps As well as gold bumps and electronic components.
  • the first aspect of the present invention provides a cyanide-free electroplating gold plating solution, wherein the plating solution comprises: gold source, conductive salt, buffer, stabilizer, arsenic-containing compound and polyalkylene glycol.
  • the polyalkylene glycol is selected from at least one of polyethylene glycol, polypropylene glycol, polytetramethylene glycol, and ethylene glycol-propylene glycol copolymer, preferably polyethylene glycol.
  • the polyalkylene glycol has a weight average molecular weight of 400-20000 g/mol, preferably 600-8000 g/mol.
  • the concentration of the polyalkylene glycol is 1-300 mg/L, preferably 10-100 mg/L.
  • the arsenic-containing compound is selected from at least one of arsenic oxides, arsenate, arsenite, and arsenic-containing organic compounds, preferably sodium arsenite and/or arsenic trioxide.
  • the arsenic-containing compound is calculated as arsenic, and the concentration of the arsenic-containing compound in the plating solution is 1-100 mg/L, preferably 3-30 mg/L.
  • the second aspect of the present invention provides an application of the cyanide-free electroplating gold plating solution provided by the present invention in semiconductor manufacturing.
  • the third aspect of the present invention provides a method for electroplating gold bumps, wherein the method includes: electroplating a semiconductor in the presence of the cyanide-free gold plating solution provided by the present invention, and forming gold bumps on the surface of the semiconductor.
  • the fourth aspect of the present invention provides a gold bump produced by the method provided by the present invention.
  • the fifth aspect of the present invention provides an electronic component having the gold bump provided by the present invention.
  • the present invention uses the provided cyanide-free electroplating gold plating solution to realize the preparation of high-hardness gold bumps on semiconductors, and the hardness of the obtained gold bumps can reach about 100HV after heat treatment, and the shape of the obtained gold bumps is regular , the thickness of the coating is uniform, and the height difference of the gold-plated surface is low.
  • Fig. 1 is used for evaluating plating solution to fill level ability, illustrates the sectional schematic diagram of the test sample of the shape result that the plating solution that the present invention obtains prepares gold bump; Wherein, form bump opening size between two photoresists on the substrate 80 ⁇ m (length) ⁇ 20 ⁇ m (width) ⁇ 15 ⁇ m (depth), used to fill the plating solution. A 1.2 ⁇ m high passivation layer was placed on the substrate to evaluate the filling ability of the plating solution.
  • Figure 1a shows that the opening is fully open, that is, the width of the formed gold bump is 20 ⁇ m, and there is no step in the middle;
  • the width of the step formed by the passivation layer in Figure 1b is 12 ⁇ m, the width of the step formed by the passivation layer in Figure 1c is 8 ⁇ m, and
  • Figure 1d The step width formed by the middle passivation layer is 4 ⁇ m;
  • Fig. 2 is the 100 times enlarged picture of the profile of the gold bump corresponding to the various opening widths of Fig. 1 prepared in embodiment 5;
  • Fig. 3 is the 500 times enlarged picture of the profile of the gold bump corresponding to Fig. 1a, 1b opening prepared in embodiment 5;
  • Fig. 4 is a 500-fold enlarged picture of the profile of the gold bump corresponding to Fig. 1c and 1d openings prepared in Example 5;
  • Fig. 5 is a schematic diagram of sampling for determining the size of gold pillars and steps in the prepared gold bump. From Fig. 3 and Fig. 4, two adjacent gold bumps corresponding to the four kinds of opening widths are respectively selected to set up the detection area, which is divided into A area and B area, and display the detection points, the detection results are shown in Table 2.
  • the first aspect of the present invention provides a cyanide-free electroplating gold plating solution, wherein the plating solution includes: gold source, conductive salt, buffer, stabilizer, arsenic-containing compound and polyalkylene glycol.
  • the cyanide-free electroplating gold plating solution contains polyalkylene glycol, and further cooperates with arsenic-containing compounds and other components to realize the use of cyanide-free electroplating gold to prepare high-hardness electroplated gold bumps to meet the requirements of semiconductor Manufacturing requirements, and the shape of the obtained gold bumps is regular.
  • the plating solution provided by the present invention also contains a solvent, which may be water.
  • the polyalkylene glycol is selected from at least one of polyethylene glycol, polypropylene glycol, polytetramethylene glycol, and ethylene glycol-propylene glycol copolymer, preferably polyethylene glycol diol.
  • the polyalkylene glycol has a weight average molecular weight of 400-20000 g/mol.
  • the weight-average molecular weight of the polyalkylene glycol is lower than 400 g/mol, the reduction of gold purity may be caused by the co-plating of polyalkylene glycol, which may affect the bonding performance of gold plating.
  • the weight average molecular weight is higher than 20000 g/mol, the solubility of polyalkylene glycol is poor.
  • Commercially available such as polyethylene glycol 600, polyethylene glycol 4000, polyethylene glycol 8000.
  • the concentration of the polyalkylene glycol in the plating solution is 1-300 mg/L. Concentrations higher than 300mg/L will lead to excessively high hardness, and concentrations lower than 1mg/L cannot meet the demand for high hardness after heat treatment.
  • More preferably can be 1mg/L, 5mg/L, 10mg/L, 20mg/L, 30mg/L, 40mg/L, 50mg/L, 60mg/L, 70mg/L, 80mg/L, 90mg/L, 100mg/L L, 110mg/L, 120mg/L, 130mg/L, 140mg/L, 150mg/L, 160mg/L, 170mg/L, 180mg/L, 190mg/L, 200mg/L, 220mg/L, 240mg/L, 260mg/L, 280mg/L, 300mg/L, and any value in the range consisting of any two values above, preferably 10-100mg/L.
  • the arsenic-containing compound is selected from at least one of arsenic oxides, arsenite, and arsenic-containing organic compounds, preferably selected from sodium arsenite and/or arsenic trioxide.
  • the arsenic-containing compound is calculated as arsenic, and the concentration of the arsenic-containing compound is 1-100 mg/L.
  • the concentration of the arsenic-containing compound is lower than 1 mg/L, the depolarization effect of the plating solution is insufficient, resulting in a decrease in precipitation efficiency and a decrease in the purity of gold.
  • the concentration of the arsenic-containing compound is greater than 100 mg/L, missing plating occurs in the low current density area, and the roughness of the plating solution in the high current density area increases, resulting in uneven appearance of the coating.
  • the concentration of the arsenic compound is, for example, 1 mg/L, 2 mg/L, 3 mg/L, 4 mg/L, 5 mg/L, 6 mg/L, 7 mg/L, 8 mg/L, 9 mg/L, 10 mg /L, 11mg/L, 12mg/L, 13mg/L, 14mg/L, 15mg/L, 16mg/L, 17mg/L, 18mg/L, 19mg/L, 20mg/L, 21mg/L, 22mg/L , 23mg/L, 24mg/L, 25mg/L, 26mg/L, 27mg/L, 28mg/L, 29mg/L, 30mg/L, 35mg/L, 40mg/L, 45mg/L, 50mg/L, 55mg/L, 60mg/L, 65mg/L, 70mg/L, 75mg/L, 80mg/L, 85mg/L, 50m
  • the weight ratio of described polyalkylene glycol and described arsenic-containing compound is 0.34-30: 1. It can provide better hardness and shape regularity of gold bump after heat treatment.
  • the above weight ratio is lower than 0.34:1 or higher than 30:1, which is not conducive to the cooperation between the polyalkylene glycol and the arsenic-containing compound in the present invention, so as to improve the hardness and shape regularity of the gold bump after heat treatment, Preferably it is 4-20:1.
  • the gold source is selected from gold sulfate and/or sulfite, preferably at least one of sodium gold sulfite, potassium gold sulfite, and ammonium gold sulfite.
  • the amount of the gold source is such that the concentration of gold ions in the plating solution is 1-20 g/L.
  • the concentration of gold ions is less than 1g/L, the cathode precipitation efficiency is too low, and the electroplating solution becomes unstable at the same time, and gold is easy to precipitate in the plating solution instead of the surface of the cathode.
  • the concentration of gold ions is greater than 20g/L, although the stability of the electroplating solution and the appearance and physical properties of the coating have no effect, the gold is wasted due to the stripping of the plating solution after the plated sheet is completed, and the cost rises.
  • the concentration of gold ions is 1g/L, 2g/L, 3g/L, 4g/L, 5g/L, 6g/L, 7g/L, 8g/L, 9g/L, 10g/L, 11g/L, 12g/L, 13g/L, 14g/L, 15g/L, 16g/L, 17g/L, 18g/L, 19g/L, 20g/L, and any value in the range composed of any two of the above values, Preferably 8-15g/L.
  • the conductive salt is selected from sulfite and/or sulfate, preferably selected from sodium sulfite, potassium sulfite, ammonium sulfite, sodium bisulfite, sodium sulfate, potassium sulfate, At least one of ammonium sulfate and sodium bisulfate, preferably sodium sulfite and sodium sulfate.
  • the concentration of sodium sulfite is 10-120g/L; when it is less than 10g/L, the uniformity of electroplating will decrease, the hardness of the plating layer will be high, and even the plating solution may Decomposition occurs. When it is greater than 120g/L, the current density range in the high area becomes narrow and the coating becomes rough.
  • the concentration of sodium sulfite is preferably 10g/L, 15g/L, 20g/L, 25g/L, 30g/L, 35g/L, 40g/L, 45g/L, 50g/L, 55g/L, 60g/L, 65g/L, 70g/L, 75g/L, 80g/L, 85g/L, 90g/L, 95g/L, 100g/L, 105g/L, 110g/L, 115g/L, 120g/L, and the above Any value in the range composed of any two numerical values, preferably 30-80g/L.
  • the concentration of sodium sulfate is 1-120g/L.
  • concentration of sodium sulfate is greater than 120g/L, the high current density range may be narrowed and the coating may become rough.
  • concentration of sodium sulfate is preferably 1g/L, 5g/L, 10g/L, 15g/L, 20g/L, 25g/L, 30g/L, 35g/L, 40g/L, 45g/L, 50g/L . -60g/L.
  • the buffering agent is selected from at least one of edetate, phosphate, tartrate, citrate, preferably selected from disodium edetate and/or monobasic sodium phosphate.
  • the concentration of the buffer in the plating solution is 1-30 g/L.
  • concentration of the buffer is lower than 1g/L, sometimes the buffering capacity of the plating solution is insufficient and the appearance of the coating is uneven.
  • the buffer is greater than 30g/L, the current density range in the high area becomes narrow and the coating becomes rough.
  • the concentration of the preferred buffering agent is 1g/L, 2g/L, 3g/L, 4g/L, 5g/L, 6g/L, 7g/L, 8g/L, 9g/L, 10g/L, 11g/L, 12g/L, 13g/L, 14g/L, 15g/L, 16g/L, 17g/L, 18g/L, 19g/L, 20g/L, 25g/L, 30g/L, and any two values above Any value within the range of the composition, preferably 5-20 g/L.
  • the stabilizer is a water-soluble amine, preferably selected from water-soluble polyamines, preferably ethylenediamine, propylenediamine, diethylenetriamine, triethylenetetramine, pentaethylene At least one of tetraamines, preferably ethylenediamine and/or propylenediamine.
  • water-soluble polyamines preferably ethylenediamine, propylenediamine, diethylenetriamine, triethylenetetramine, pentaethylene At least one of tetraamines, preferably ethylenediamine and/or propylenediamine.
  • the concentration of the stabilizer in the plating solution is 1-30 g/L.
  • the concentration of the stabilizer water-soluble amine is greater than 30 g/L, the complexing ability with gold (I) becomes stronger, resulting in too dense electroplating film, which may cause poor welding.
  • it is less than 1 g/L, the plating solution becomes unstable and the plating layer becomes rough.
  • the concentration of the preferred stabilizer is 1g/L, 2g/L, 3g/L, 4g/L, 5g/L, 6g/L, 7g/L, 8g/L, 9g/L, 10g/L, 11g/L, 12g/L, 13g/L, 14g/L, 15g/L, 16g/L, 17g/L, 18g/L, 19g/L, 20g/L, 25g/L, 30g/L, and any two values above Any value within the range of the composition, preferably 4-20 g/L.
  • the plating solution further includes a pH additive; preferably, the pH of the plating solution is 7-9.
  • the pH of the plating solution is lower than 7.0, the long-term stability of the plating solution deteriorates.
  • the pH of the plating solution is higher than 9.0, the photoresist dissolves or seepage occurs, and at the same time, the appearance of the plating layer is uneven because gold is difficult to restore.
  • the pH of the preferred plating solution is, for example, 7.0, 7.1, 7.2, 7.3, 7.4, 7.5, 7.6, 7., 7.8, 7.9, 8, 8.1, 8.2, 8.3, 8.4, 8.5, 8.6, 8.7, 8.8, 8.9, 9.0, And any value in the range composed of any two of the above values, preferably 7.4-9.
  • pH adjuster sulfurous acid, sulfuric acid, etc. can be used as the acid, and sodium hydroxide, potassium hydroxide, ammonia water, etc. can be used as the base.
  • the plating solution may be prepared by putting the above-mentioned components into water and completely dissolving them.
  • conductive salt, stabilizer, buffering agent and polyalkylene glycol can be completely dissolved by directly putting the corresponding compound into water.
  • Gold source and arsenic-containing compound can be added in the form of aqueous solution, but the actual dosage is calculated by gold element and arsenic respectively, and finally each component is completely dissolved.
  • the conductive salt, stabilizer, buffer and water can be mixed first to obtain a completely dissolved solution, then the gold source and arsenic-containing compound are added in the form of solution, and polyalkylene glycol is added to dissolve completely.
  • the dissolution process can be carried out at room temperature with stirring.
  • the pH value of the solution obtained by dissolving is also adjusted to meet the pH requirement of 7-9, preferably 7.4-9.
  • the requirements for pH adjustment are as described above and will not be repeated here.
  • volume adjustment of the obtained solution is also performed to obtain the final plating solution and meet the concentration requirements for each component.
  • the second aspect of the present invention provides an application of the cyanide-free electroplating gold plating solution provided by the present invention in semiconductor manufacturing.
  • the application may be in fields such as electronic circuit boards, electronic connectors, and semiconductor manufacturing.
  • the third aspect of the present invention provides a method for electroplating gold bumps, wherein the method includes: electroplating a semiconductor in the presence of the cyanide-free gold plating solution provided by the present invention, and forming gold bumps on the surface of the semiconductor.
  • the method includes: electroplating a semiconductor in the presence of the cyanide-free gold plating solution provided by the present invention, and forming gold bumps on the surface of the semiconductor.
  • it is suitable for preparing high-hardness gold bump products formed by photoresist technology on the surface of semiconductors, such as liquid crystal driver chips, CMOS image sensors, fingerprint sensors, etc. on glass), COF (Chip on Film), COP (Chip on Plastics), etc. to realize the interconnection between chips and substrates.
  • the electroplating temperature is 40-70°C.
  • the temperature of electroplating is higher than 70°C, sometimes the plating solution will decompose, and at the same time, it will be difficult to manage the plating solution because the plating solution will be too fast.
  • the plating temperature is lower than 40° C., the deposition efficiency decreases, and the appearance of the plating layer may be uneven.
  • the current density of the electroplating is 0.1-2ASD.
  • the current density of the electroplating is, for example, 0.1ASD, 0.2ASD, 0.3ASD, 0.4ASD, 0.5ASD, 0.6ASD, .07ASD, 0.8ASD, 0.9ASD, 1ASD, 1.1ASD, 1.2ASD, 1.3ASD, 1.4ASD, 1.5ASD, 1.7ASD, 1.8ASD, 1.9ASD, 2.0ASD, and any value in the range formed by any two values above, preferably 0.2-1.2ASD.
  • a gold bump prepared by the above method which has a regular shape and high hardness after heat treatment. It can reach above 98HV.
  • the present invention can also provide an electronic component with the above-mentioned gold bump or an electronic component manufactured by the above-mentioned method for preparing the gold bump.
  • Precipitation efficiency After electroplating, use the weighing method to calculate the precipitation efficiency of the plating solution.
  • the precipitation efficiency is the theoretical weight of the weight of electroplated gold divided by the electricity passed during the electroplating process and converted to monovalent gold.
  • Coating hardness Use a Vickers hardness tester to test the hardness of the coating, use a 10gf load to keep the measuring head on the surface of the coating for 10s, and test the hardness of the coating without heat treatment and after heat treatment at 270°C for 30 minutes.
  • Gold bump height In order to evaluate the leveling ability of the plating solution of the present invention, a graphic chip is designed according to actual needs, the area of the graphic chip is 30 ⁇ 30mm, and the surface cross-sectional structure of the silicon wafer is Si/SiO2/Al/Ti/Au , using positive photoresist AZ4660 to form bump openings, the size of the opening is 80 ⁇ m (length) ⁇ 20 ⁇ m (width) ⁇ 15 ⁇ m (depth), the distance between the horizontal rows of adjacent bumps is 13 ⁇ m, and the distance between the vertical rows is 30 ⁇ m.
  • a passivation layer of 1.2 ⁇ m was designed on the aluminum electrode, and the opening widths were 4 ⁇ m, 8 ⁇ m and 12 ⁇ m (as shown in Figure 1).
  • NMP solvent to remove the photoresist to obtain the filling formed in the opening
  • Keyence VK-X3100 to measure the shape and height of the gold bump.
  • Platinum titanium mesh is used as the anode for electroplating, and the pre-gold-plated brass sheet is used as the cathode.
  • the cathode area is 2 ⁇ 2cm. , to get gold-plated pieces.
  • the calculated precipitation efficiency is 99%.
  • the surface of the gold-plated coating is smooth and uniform in color; the hardness of the coating is 122HV before heat treatment, and the hardness of the coating after heat treatment is 98HV.
  • the surface of the coating is smooth and uniform in color, the calculated precipitation efficiency is 99%, the hardness of the coating is 124HV before heat treatment, and the hardness of the coating after heat treatment is 101HV.
  • the surface of the coating is smooth and uniform in color, the calculated precipitation efficiency is 100%, the hardness of the coating is 125HV before heat treatment, and the hardness of the coating after heat treatment is 110HV.
  • the surface of the coating is smooth and uniform in color, the calculated precipitation efficiency is 100%, the hardness of the coating is 129HV before heat treatment, and the hardness of the coating after heat treatment is 106HV.
  • the surface of the coating is smooth, the color is uniform, the precipitation efficiency is 99%, the hardness of the coating is 132HV before heat treatment, and the hardness of the coating after heat treatment is 58HV.
  • Graphic sheet electroplating is carried out in a 1.7L Yamamoto plating vertical electroplating tank, and the plating solution is plating solution-1; the anode uses a platinum electrode, and the distance between the cathode and the anode is about 4cm. Use a scraper to move left and right on the surface of the cathode to promote the plating solution. exchange in photoresist.
  • the current intensity is 24mA (the current density is 0.5ASD), the electroplating temperature is 55°C, and the electroplating time is 35min.
  • the target height of gold bumps measured after electroplating was 12 ⁇ m.

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Abstract

La présente invention concerne une solution de placage d'or par électroplacage sans cyanure et une application associée, la solution de placage comprenant : une source d'or, un sel conducteur, un tampon, un stabilisateur, un composé contenant de l'arsenic et du polyalkylène glycol. Une perle d'or à dureté élevée peut être préparée sur un semi-conducteur. La dureté de la perle d'or obtenue peut atteindre environ 100 HV après traitement thermique, et la perle d'or préparée présente une forme régulière, une épaisseur de revêtement uniforme et une faible différence de hauteur sur la surface plaquée d'or.
PCT/CN2022/123144 2021-09-30 2022-09-30 Solution de placage d'or par électroplacage sans cyanure, application associée, procédé d'électroplacage de perle d'or, perle d'or et composant électronique WO2023051766A1 (fr)

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CN202111164747.7 2021-09-30
CN202111164747 2021-09-30
CN202111243386.5A CN113913879B (zh) 2021-09-30 2021-10-25 无氰电镀金镀液及其应用和电镀制金凸块的方法以及金凸块和电子部件
CN202111243386.5 2021-10-25

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CN113913879B (zh) * 2021-09-30 2022-08-09 深圳市联合蓝海黄金材料科技股份有限公司 无氰电镀金镀液及其应用和电镀制金凸块的方法以及金凸块和电子部件
CN115029750A (zh) * 2022-04-18 2022-09-09 福建中科光芯光电科技有限公司 一种半导体材料电镀金工艺方法
CN114934302A (zh) * 2022-04-27 2022-08-23 深圳市联合蓝海黄金材料科技股份有限公司 无氰电镀金镀液及其应用

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