WO2023035316A1 - 显示面板及显示装置 - Google Patents

显示面板及显示装置 Download PDF

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Publication number
WO2023035316A1
WO2023035316A1 PCT/CN2021/119284 CN2021119284W WO2023035316A1 WO 2023035316 A1 WO2023035316 A1 WO 2023035316A1 CN 2021119284 W CN2021119284 W CN 2021119284W WO 2023035316 A1 WO2023035316 A1 WO 2023035316A1
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WIPO (PCT)
Prior art keywords
sub
opening
metal layer
undercut
display panel
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Application number
PCT/CN2021/119284
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English (en)
French (fr)
Inventor
陈中明
张春鹏
刘汉辰
鲜于文旭
Original Assignee
武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Publication of WO2023035316A1 publication Critical patent/WO2023035316A1/zh

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/123Connection of the pixel electrodes to the thin film transistors [TFT]

Definitions

  • the present application relates to the display field, in particular to a display panel and a display device.
  • organic light-emitting diodes includes an anode (Anode) layer, a cathode (Cathode) layer, and an organic functional layer between the anode and the cathode.
  • the organic functional layer is produced on the anode layer by FMMFineMetalMask (FMM) evaporation, and then the cathode layer is produced by evaporation on the entire surface.
  • FMM FMMFineMetalMask
  • the cathode signal can only be fed by the constant voltage low-level metal line (VSS) through the two opposite sides of the screen, for example, through the upper The side and the lower side are fed, so that the frame width of the display panel near the constant-voltage low-level metal line is too large, which is not conducive to narrowing the frame of the display panel.
  • VSS constant voltage low-level metal line
  • Embodiments of the present application provide a display panel and a display device, which are used to realize narrower frame of the display panel.
  • an embodiment of the present application provides a display panel, including a display area and a binding area adjacent to the display area;
  • the display panel includes a base, and a first electrode, a common layer, and a second electrode stacked on the base;
  • the display panel further includes a first metal layer located between the base and the common layer, and the first metal layer is provided with an undercut opening located in the display area; wherein, the second An electrode is connected to the first metal layer within the undercut opening.
  • the second electrode includes a first main body located on the first metal layer and a first connection part connected to the first main body; wherein, the first A connecting portion is located within the undercut opening, at least a portion of the first connecting portion is disconnected from the first body portion at an inner wall of the undercut opening, the first connecting portion is at the inner wall connected to the first metal layer.
  • the undercut opening penetrates through the sidewall of the first metal layer, and the first connection part is connected to the first main body part at the sidewall.
  • the first metal layer includes a second sub-metal layer and a first sub-metal layer stacked on the substrate
  • the undercut opening includes a A first sub-undercut opening of a sub-metal layer and a second sub-undercut opening disposed on the second sub-metal layer, the first sub-undercut opening communicates with the second sub-undercut opening , the diameter of the second sub-undercut opening is larger than the diameter of the first sub-undercut opening.
  • the first metal layer includes a third sub-metal layer, a second sub-metal layer and a first sub-metal layer stacked on the substrate, and the undercut opening including a first sub-undercut opening disposed on the first sub-metal layer, a second sub-undercut opening disposed on the second sub-metal layer, and a third sub-undercut opening disposed on the third sub-metal layer.
  • the sub-undercut openings, the first sub-undercut opening, the second sub-undercut opening and the third sub-undercut opening communicate with each other, the diameter of the first sub-undercut opening and The diameters of the third sub-undercut openings are all smaller than the diameters of the second sub-undercut openings.
  • the common layer includes a second body part and a second connection part, the second body part is located between the first metal layer and the first electrode, the The second connection part is located in the undercut opening, wherein the thickness of the second connection part is smaller than the sum of the thicknesses of the third sub-undercut opening and the second sub-undercut opening.
  • the material of the first sub-metal layer is titanium metal
  • the material of the second sub-metal layer is aluminum metal
  • the material of the third sub-metal layer is titanium metal
  • the display panel includes a plurality of sub-pixels arranged at intervals, the first metal layer includes a plurality of undercut openings located in the display area, and a plurality of A plurality of first metal traces extending from one end of the undercut opening to the binding area;
  • the plurality of undercut openings and the plurality of first metal traces are located in the gaps between the sub-pixels.
  • the first metal layer further includes a source-drain layer located in the display area, and a plurality of second metal wires located in the binding area, and the plurality of the The second metal wires are correspondingly connected to the plurality of first metal wires.
  • the cross-section of the undercut opening is Y-shaped, U-shaped or C-shaped.
  • the present application also provides a display panel, including a display area
  • the display panel includes:
  • the first conductive layer is provided with an opening located in the display area, and the second conductive layer includes a first main body located on the first conductive layer and a first connection part connected to the first main body ; wherein, the first connecting part is located in the opening, at least a part of the first connecting part is disconnected from the first main body part at the inner wall of the opening, and the first connecting part is in the The inner wall is connected with the first conductive layer.
  • the opening penetrates through the sidewall of the first conductive layer, and the first connection part is connected to the first main body part at the sidewall.
  • the insulating layer includes a second main body part and a second connection part, and the second main body part is located between the first conductive layer and the first main body part, so The second connecting part is located in the opening, at least a part of the second connecting part is disconnected from the first main body at the inner wall of the opening, and the second connecting part is located in the first connecting part and between the base.
  • the first conductive layer includes a second sub-conductive layer and a first sub-conductive layer stacked on the substrate, and the opening includes a sub-conductive layer disposed on the first sub-conductive layer.
  • the linear distance between at least a part of the inner wall of the opening and the center line of the opening increases. trend.
  • the present application also provides a display device, the display device includes a display panel, and the display panel includes a display area and a binding area adjacent to the display area;
  • the display panel includes a base, and a first electrode, a common layer, and a second electrode stacked on the base;
  • the display panel further includes a first metal layer located between the base and the common layer, and the first metal layer is provided with an undercut opening located in the display area; wherein, the second An electrode is connected to the first metal layer within the undercut opening.
  • the second electrode includes a first main body located on the first metal layer and a first connection part connected to the first main body; wherein, the first A connecting portion is located within the undercut opening, at least a portion of the first connecting portion is disconnected from the first body portion at an inner wall of the undercut opening, the first connecting portion is at the inner wall connected to the first metal layer.
  • the undercut opening penetrates through the sidewall of the first metal layer, and the first connection part is connected to the first main body part at the sidewall.
  • the common layer includes a second main body part and a second connection part, and the second main body part is located between the first metal layer and the first main body part, so The second connection part is located in the undercut opening, at least a part of the second connection part is disconnected from the first main body part at the inner wall of the undercut opening, and the second connection part is located in the undercut opening. Between the first connection part and the base.
  • Embodiments of the present application provide a display panel and a display device.
  • the display panel includes a display area and a binding area adjacent to the display area; the display panel includes a base, and a first layer stacked on the base.
  • the undercut opening of the display area, the second electrode is connected to the first metal layer in the undercut opening, so that the second electrode in the prior art is introduced through the metal wiring surrounding the display area.
  • the electrical signal is introduced through the first metal layer located in the display area, so as to realize the narrow frame of the display panel.
  • FIG. 1 is a top view of a display panel in the prior art
  • FIG. 2 is a top view of a display panel provided by an embodiment of the present application.
  • Fig. 3 is the first cross-sectional view of Fig. 2 along the A-A direction;
  • FIG. 4 is a schematic diagram of the first structure of the first metal layer provided by the embodiment of the present application.
  • Fig. 5 is the first cross-sectional view of Fig. 2 along the B-B direction;
  • Fig. 6 is a sectional view along the C-C direction of Fig. 2;
  • FIG. 7A to 7C are top views of the first metal layer provided by the embodiment of the present application.
  • Fig. 8 is a second cross-sectional view along the A-A direction of Fig. 2
  • Fig. 9 is a schematic diagram of the second structure of the first metal layer provided by the embodiment of the present application.
  • the present application provides a display panel and a display device.
  • a display panel and a display device.
  • the present application will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described here are only used to explain the present application, not to limit the present application.
  • Embodiments of the present application provide a display panel and a display device. Each will be described in detail below. It should be noted that the description sequence of the following embodiments is not intended to limit the preferred sequence of the embodiments.
  • FIG. 1 is a top view of a display panel in the prior art.
  • the display panel includes a display area 100 and a binding area 200 adjacent to the display area 100, and the display panel includes an anode layer stacked on the substrate 10 (not shown in the figure) , a cathode layer 11 and a common layer (not shown) between the anode layer and the cathode layer 11; the display panel also includes a chip-on-chip film 13 located in the binding area, the overlay The thin film 13 transmits the cathode signal to the cathode layer 11 through the constant-voltage low-level metal line (VSS) 12; wherein, in the actual production process, the anode layer is produced by a separate typesetting method, and a high-precision metal mask is used
  • the common layer is fabricated on the anode layer by vapor deposition, and then the cathode layer 11 is fabricated by vapor deposition on the entire surface.
  • the cathode layer 11 is provided on the entire surface, and is limited by space and manufacturing technology, the cathode signal can only be fed by the constant voltage low-level metal line 12 through the two opposite sides of the screen, for example, through the upper As a result, the frame width of the display panel near the constant-voltage low-level metal line 12 is too large, which is not conducive to narrowing the frame of the display panel. Based on this, embodiments of the present application provide a display panel and a display device to improve the above defects.
  • the present application provides a display panel and a display device, the display panel includes a display area 100; the display panel includes a base 10, and a first electrode 20 stacked on the base 10 , a common layer 30 and a second electrode 40; wherein, the display panel further includes a first metal layer 120 located between the substrate 10 and the common layer 30, and the first metal layer 120 is provided with a The undercut opening 1200 of the display area 100 ; wherein, the second electrode 40 is connected to the first metal layer 120 in the undercut opening 1200 .
  • the first metal layer 120 is provided with the undercut opening 1200 located in the display area 100
  • the second electrode 40 is connected to the first metal layer in the undercut opening 1200 . 120 connections, so as to realize narrow frame of the display panel.
  • FIG. 2 is a top view of the display panel provided by the embodiment of the present application
  • FIG. 3 is a first cross-sectional view along the A-A direction of FIG. 2 .
  • This embodiment provides a display panel, which includes a display area 100 and a binding area 200 adjacent to the display area 100; the display panel includes a base 10, and a first layer stacked on the base 10 The electrode 20 , the common layer 30 and the second electrode 40 .
  • the display panel includes but is not limited to organic light-emitting diodes (Organic Light-Emitting Diode, OLED), further, in this embodiment, the technical solution of this embodiment is described by taking the display panel as an example of an electroluminescent diode.
  • OLED Organic Light-Emitting Diode
  • the substrate 10 may include a rigid substrate or a flexible substrate.
  • the material may be metal or glass.
  • the material may include acrylic resin. , methacrylic resin, polyisoprene, vinyl resin, epoxy-based resin, polyurethane-based resin, cellulose resin, silicone resin, polyimide-based resin, polyamide-based resin at least one .
  • the material of the base 10 is not limited.
  • the first electrode 20 includes but not limited to an anode
  • the second electrode 40 includes but not limited to a cathode
  • the common layer 30 includes but not limited to a hole injection layer, a hole transport layer, a light emitting layer layer, electron buffer layer, and electron transport layer, which are not specifically limited in this embodiment.
  • the display panel includes an active layer 50 located between the substrate 10 and the first electrode 20, a first insulating layer 60, a gate 70, a second insulating layer 80, source and drain electrodes 90 and a second Three insulating layers 110 ; wherein, the display panel further includes a first metal layer 120 located between the base 10 and the common layer 30 .
  • the display panel includes an active layer 50 located between the substrate 10 and the first electrode 20 , a first insulating layer 60 , a gate 70 , a second insulating layer 80 , and source and drain electrodes 90
  • the third insulating layer 110 is only used as an example, and this embodiment does not limit the film layer structure of the display panel.
  • FIG. 4 is a schematic diagram of the first structure of the first metal layer provided by the embodiment of the present application.
  • the first metal layer 120 is provided with an undercut opening 1200 located in the display area 100, and the linear distance between at least a part of the inner wall of the undercut opening 1200 and the center line of the opening increases. The tendency to break the film layer formed in it at the inner wall.
  • the first metal layer 120 includes a second sub-metal layer 122 and a first sub-metal layer 121 stacked on the substrate 10, and the undercut opening 1200 includes The first sub-undercut opening 1201 of the first sub-metal layer 121 and the second sub-undercut opening 1202 provided on the second sub-metal layer 122, the first sub-undercut opening 1201 communicates with all The second sub-undercut opening 1202, the diameter of the second sub-undercut opening 1202 is greater than the diameter of the first sub-undercut opening 1201, so that the undercut opening 1200 is perpendicular to the base The cross-sectional area in the 10 direction tends to decrease, which is used to disconnect the film layer formed therein at the inner wall.
  • the diameter of the first sub-undercut opening 1201 and the diameter of the second sub-undercut opening 1202 are related to the actual manufacturing process, which is not specifically limited in this embodiment.
  • the material of the first sub-metal layer 121 includes but not limited to titanium metal and molybdenum metal
  • the material of the second sub-metal layer 122 includes but not limited to aluminum metal.
  • the material of the first sub-metal layer 121 is titanium metal
  • the material of the second sub-metal layer 122 is aluminum metal as an example for illustration.
  • the undercut opening 1200 is formed by wet etching away the first sub-metal layer 121 and the second sub-metal layer 122, wherein, due to the first The material of the sub-metal layer 121 and the material of the second sub-metal layer 122 are different, so when the two are wet-etched simultaneously, the etching rate of the first sub-metal layer 121 and the second sub-metal layer The etching rate of the layer 122 will have a large difference, specifically, the etching rate of the second sub-metal layer 122 is greater than the etching rate of the first sub-metal layer 121, thereby forming the first sub-metal layer with different opening diameters.
  • a sub-undercut opening 1201 and the second sub-undercut opening 1202 is provided with an opening (not marked in the figure), and the opening at least exposes the undercut opening 1200 .
  • the undercut opening 1200 is formed by wet etching away the first sub-metal layer 121 and the second sub-metal layer 122 for illustration purposes only.
  • the embodiment does not specifically limit the preparation method of the undercut opening 1200 .
  • Figure 5 is the first cross-sectional view of Figure 2 along the B-B direction
  • Figure 6 is a cross-sectional view of Figure 2 along the C-C direction.
  • the second electrode 40 includes a first main body portion 41 located on the first metal layer 120 and a first connecting portion 42 connected to the first main body portion 41; wherein, the first A connecting portion 42 is located in the undercut opening 1200, at least a part of the first connecting portion 42 is disconnected from the first main body portion 41 at the inner wall of the undercut opening 1200, the first The connection portion 42 is connected to the first metal layer 120 at the inner wall, so as to realize the connection of the second electrode 40 to the first metal layer 120 in the undercut opening 1200 .
  • the undercut opening 1200 runs through the sidewall of the first metal layer 120 , and the first connection part 42 is connected to the first main body part 41 at the sidewall.
  • the sidewall of the first metal layer 120 includes a first sidewall (not marked in the figure), a second sidewall (not marked in the figure) and a third sidewall (not marked in the figure), the The first side wall, the second side wall and the third side wall are smoothly transitioned, and the third side wall is located between the first side wall and the second side wall, in this embodiment , the position where the first connecting portion 42 is connected to the first main body portion 41 is not specifically limited, that is, the first connecting portion 42 is connected to the first main body portion 41 at the first side wall , or the first connecting portion 42 is connected to the first main body portion 41 at the second side wall, or the first connecting portion 42 is connected to the first main body portion at the third side wall 41 connections.
  • the common layer 30 includes a second main body portion 31 and a second connecting portion 32, the second main body portion 31 is located between the first metal layer 120 and the first main body portion 41,
  • the second connection part 32 is located in the undercut opening 1200, at least a part of the second connection part 32 is disconnected from the first main body part 41 at the inner wall of the undercut opening 1200, so
  • the second connecting portion 32 is located between the first connecting portion 42 and the base 10, so that the second connecting portion 32 supports the first connecting portion 42, and the first connecting portion 42
  • the connecting portion 42 is elevated to increase the contact area between the first connecting portion 42 and the sidewall of the first metal layer 120 , thereby improving the connection effect between the second electrode 40 and the first metal layer 120 .
  • the thickness of the second connection part 32 is smaller than the thickness of the second sub-undercut opening 1202, so as to avoid the contact between the first connection part 42 and the first metal layer.
  • the contact area of the sidewall of 120 is too small, thus affecting the connection effect between the second electrode 40 and the first metal layer 120 .
  • the display panel includes a plurality of sub-pixels 130 arranged at intervals
  • the first metal layer 120 includes a plurality of undercut openings 1200 located in the display area 100 , and consists of A plurality of first metal traces 124 extending from one end of the plurality of undercut openings 1200 to the bonding area 200; wherein, the plurality of undercut openings 1200 and the plurality of first metal traces 124 are located in the gaps between the sub-pixels 130 , so as not to affect the normal display of the sub-pixels 130 in the display area 100 .
  • the first metal wire 124 may extend along the first direction or the second direction, may pass through the gap between two adjacent columns of the sub-pixels 130 , or may only extend To the middle position of the display panel, this embodiment does not specifically limit this; meanwhile, the first metal trace 124 can be a straight line or a broken line, and the shape of the first metal trace 124 in this embodiment Not specifically limited; wherein, the first direction is the X direction, the second direction is the Y direction, and the first direction is perpendicular to the second direction.
  • the display area 100 includes a first display area 101 and a second display area 102, and the second display area 102 is located between the first display area 101 and the binding area 200, the undercut opening 1200 is located in the first display area 101, or the undercut opening 1200 extends from the second display area 102 to the first display area 101.
  • the length of the undercut opening 1200 is not limited. Further, this embodiment is described by taking the undercut opening 1200 located in the first display area 101 as an example.
  • the display panel further includes a COF 13 located in the binding area 200
  • the first metal layer 120 further includes a plurality of second metal wires 125 located in the binding area 200
  • the multiple second metal wires 125 are connected to the multiple first metal wires 124 correspondingly
  • the chip-on-chip 13 connects to the first metal wires 124 through the second metal wires 125 transmit electrical signals.
  • the second metal wire 125 includes but not limited to a constant voltage low-level metal wire (VSS), and one end of the second metal wire 125 is connected to the first metal wire 124 , The other end of the second metal wire 125 is connected to the COF 13 , so as to transmit electrical signals to the second electrode 40 via the first metal wire 124 .
  • VSS constant voltage low-level metal wire
  • the first metal wiring 124, the second metal wiring 125, and the source-drain electrodes 90 are arranged on the same layer, and the three can be produced in the same process, so that Maximizes the effect of reducing the thickness of the display panel.
  • This embodiment provides a display panel, the display panel includes a display area 100 and a binding area 200 adjacent to the display area 100; the display panel includes a base 10, and stacked on the base 10
  • the second electrode 40 is a cathode; the display panel also includes a first metal layer 120 between the substrate 10 and the common layer 30, the The first metal layer 120 includes a plurality of undercut openings 1200 located in the display area 100 , and a plurality of first metal traces extending from one end of the plurality of undercut openings 1200 to the bonding area 200 . wire 124 , and a plurality of second metal wires 125 located in the bonding area 200 .
  • the second electrode 40 is connected to the first metal layer 120 in the undercut opening 1200 , and the second metal wire 125 is a constant-voltage low-level metal wire.
  • the second electrode 40 is connected to the first metal layer 120 in the undercut opening 1200, and the first metal layer 120 is connected to one end including a plurality of the undercut openings 1200.
  • a plurality of the first metal wires 124 extending to the bonding area 200, and a plurality of the second metal wires 125 located in the bonding area 200, so as to pass through the first metal wires 124 transmits the cathode signal to the second electrode 40, and then transmits the electrical signal introduced through the metal wiring surrounding the display area 100 in the prior art to the second electrode located in the display area 100.
  • a metal layer 120 is introduced to realize narrow frame of the display panel.
  • the shape of the cross-section of the undercut opening 1200 includes but not limited to Y-shape, U-shape or C-shape, which is not specifically limited in this embodiment. It can be understood that, in this embodiment, by designing the undercut opening 1200 as a semi-closed structure, the first connection portion 42 of the second electrode 40 can be restricted from being located in the enclosed area formed by the undercut opening 1200 inside, so as to ensure the connection effect between the second electrode 40 and the first metal layer 120 .
  • Figure 8 is the second cross-sectional view of Figure 2 along the A-A direction
  • Figure 9 is the second type of the first metal layer 120 provided by the embodiment of the present application Schematic diagram of the structure
  • FIG. 10 is a second cross-sectional view along the B-B direction of FIG. 2 .
  • the structure of the display module is similar/identical to the first structure of the display panel provided in the above embodiment.
  • the description of the display panel in the above embodiment please refer to the description of the display panel in the above embodiment, which will not be repeated here. The difference between the two is only:
  • the first metal layer 120 is provided with an undercut opening 1200 located in the display area 100, and the linear distance between at least a part of the inner wall of the undercut opening 1200 and the center line of the opening increases first.
  • the trend of decreasing after being large is used to break the film layer formed in it at the inner wall.
  • the first metal layer 120 includes a third sub-metal layer 123, a second sub-metal layer 122 and a first sub-metal layer 121 stacked on the substrate 10, the bottom
  • the cut opening 1200 includes a first sub-undercut opening 1201 disposed on the first sub-metal layer 121 , a second sub-undercut opening 1202 disposed on the second sub-metal layer 122 , and a second sub-undercut opening 1202 disposed on the second sub-metal layer 122 .
  • the third sub-undercut opening 1203 of the third sub-metal layer 123, the first sub-undercut opening 1201, the second sub-undercut opening 1202, and the third sub-undercut opening 1203 communicate with each other , the diameter of the first sub-undercut opening 1201 and the diameter of the third sub-undercut opening 1203 are smaller than the diameter of the second sub-undercut opening 1202, so that the undercut opening 1200
  • the cross-sectional area in the direction perpendicular to the substrate 10 first increases and then decreases, which is used to disconnect the film layer formed therein at the inner wall.
  • the diameter of the first sub-undercut opening 1201, the diameter of the second sub-undercut opening 1202 and the diameter of the third sub-undercut opening 1203 are all different from those actually prepared.
  • the process is related, and this embodiment does not specifically limit it.
  • the material of the first sub-metal layer 121 includes but not limited to titanium metal and molybdenum metal
  • the material of the second sub-metal layer 122 includes but not limited to aluminum metal
  • the material of 123 includes but not limited to titanium metal and molybdenum metal.
  • the material of the first sub-metal layer 121 is titanium metal
  • the material of the second sub-metal layer 122 is aluminum metal
  • the material of the third sub-metal layer 122 is aluminum metal.
  • the material of the metal layer 123 is titanium metal as an example for illustration.
  • the undercut opening 1200 is wet-etched to remove the first sub-metal layer 121 , the second sub-metal layer 122 and the third sub-metal layer 123 And formed, wherein, because the material of the first sub-metal layer 121 and the material of the second sub-metal layer 122 are different, the material of the first sub-metal layer 121 and the material of the third sub-metal layer 123 The materials are the same, so when the three are wet-etched at the same time, the etching rate of the first sub-metal layer 121 is the same as the etching rate of the third sub-metal layer 123, and the first sub-metal layer 121 The etching rate of the second sub-metal layer 122 will be quite different from the etching rate of the second sub-metal layer 122, specifically, the etching rate of the second sub-metal layer 122 is greater than the etching rate of the first sub-metal layer 121 The etching rate of
  • the undercut opening 1200 formed by wet etching away the first sub-metal layer 121 , the second sub-metal layer 122 and the third sub-metal layer 123 is only used for For example, this embodiment does not specifically limit the preparation method of the undercut opening 1200 .
  • the second electrode 40 includes a first main body portion 41 located on the first metal layer 120 and a first connecting portion 42 connected to the first main body portion 41; wherein, the first A connecting portion 42 is located in the undercut opening 1200, at least a part of the first connecting portion 42 is disconnected from the first main body portion 41 at the inner wall of the undercut opening 1200, the first The connection portion 42 is connected to the first metal layer 120 at the inner wall, so as to realize the connection of the second electrode 40 to the first metal layer 120 in the undercut opening 1200 .
  • the undercut opening 1200 runs through the sidewall of the first metal layer 120 , and the first connection part 42 is connected to the first main body part 41 at the sidewall.
  • the sidewall of the first metal layer 120 includes a first sidewall (not marked in the figure), a second sidewall (not marked in the figure) and a third sidewall (not marked in the figure), the The first side wall, the second side wall and the third side wall are smoothly transitioned, and the third side wall is located between the first side wall and the second side wall, in this embodiment , the position where the first connecting portion 42 is connected to the first main body portion 41 is not specifically limited, that is, the first connecting portion 42 is connected to the first main body portion 41 at the first side wall , or the first connecting portion 42 is connected to the first main body portion 41 at the second side wall, or the first connecting portion 42 is connected to the first main body portion at the third side wall 41 connections.
  • the common layer 30 includes a second main body portion 31 and a second connecting portion 32, the second main body portion 31 is located between the first metal layer 120 and the first main body portion 41,
  • the second connection part 32 is located in the undercut opening 1200, at least a part of the second connection part 32 is disconnected from the first main body part 41 at the inner wall of the undercut opening 1200, so
  • the second connecting portion 32 is located between the first connecting portion 42 and the base 10, so that the second connecting portion 32 supports the first connecting portion 42, and the first connecting portion 42
  • the connection part 42 is elevated to increase the contact area between the first connection part 42 and the sidewall of the first metal layer 120 , thereby improving the connection effect between the second electrode 40 and the first metal layer 120 .
  • the thickness of the second connecting portion 32 is smaller than the sum of the thicknesses of the third sub-undercut opening 1203 and the second sub-undercut opening 1202 , thereby avoiding the The contact area between the first connecting portion 42 and the sidewall of the first metal layer 120 is too small, thereby affecting the connection effect between the second electrode 40 and the first metal layer 120 .
  • the embodiment of the present application also provides a display panel, including a display area, and the display panel includes a substrate; a first conductive layer disposed on the substrate; an insulating layer disposed on the first conductive layer; a second The conductive layer is arranged on the insulating layer; the first conductive layer is provided with an opening in the display area, and the second conductive layer includes a first main body on the first conductive layer and connected to The first connecting portion of the first main body; wherein the first connecting portion is located in the opening, at least a part of the first connecting portion is cut off from the first main body at the inner wall of the opening On, the first connection portion is connected to the first conductive layer at the inner wall.
  • the types of the first conductive layer, the insulating layer, and the second conductive layer there is no specific limitation on the types of the first conductive layer, the insulating layer, and the second conductive layer.
  • the display panel further includes a binding area adjacent to the display area, the display panel includes a chip-on-film located in the binding area, and the first conductive layer includes a plurality of The openings of the display area, a plurality of first metal traces extending from one end of the plurality of openings to the binding area, and a plurality of second metal traces located in the binding area, a plurality of Each of the second metal wires is correspondingly connected to a plurality of the first metal wires, and the COF transmits electrical signals to the first metal wires through the second metal wires.
  • the opening penetrates a sidewall of the first conductive layer, and the first connection part is connected to the first main body part at the sidewall.
  • the insulating layer includes a second body part and a second connection part, the second body part is located between the first conductive layer and the first body part, and the second connection part Located within the opening, at least a portion of the second connecting portion is disconnected from the first body portion at an inner wall of the opening, the second connecting portion is located between the first connecting portion and the base between.
  • the first conductive layer includes a second sub-conductive layer and a first sub-conductive layer stacked on the base, and the opening includes a first sub-conductive layer disposed on the first sub-conductive layer.
  • the linear distance between at least a part of the inner wall of the opening and the center line of the opening tends to increase, so that The film layer formed therein is broken at the inner wall.
  • the first conductive layer includes a third sub-conductive layer, a second sub-conductive layer, and a first sub-conductive layer stacked on the substrate, and the opening includes a The first sub-opening in the first sub-conductive layer, the second sub-opening in the second sub-conductive layer, and the third sub-opening in the third sub-conductive layer, the first sub-opening
  • the opening, the second sub-opening and the third sub-opening communicate with each other, and the diameters of the first sub-opening and the third sub-opening are both smaller than the diameter of the second sub-opening, so that the The cross-sectional area of the opening in the direction perpendicular to the base increases first and then decreases, which is used to disconnect the film layer formed therein at the inner wall.
  • the first conductive layer includes a plurality of openings located in the display area, a plurality of first metal traces extending from one end of the plurality of openings to the bonding area, and a plurality of A plurality of second metal wires in the binding area are respectively connected to a plurality of first metal wires correspondingly, and the chip-on-chip film passes through the second metal wires transmitting electrical signals to the first metal wiring, and then introducing the electrical signal introduced through the metal wiring surrounding the display area in the prior art through the first conductive layer located in the display area, so as to The narrow frame of the display panel is realized.
  • An embodiment of the present application further provides a display device, including the display panel and a terminal body as described in the above embodiments, where the terminal body is combined with the display panel.
  • the terminal body may include a middle frame, a frame glue, etc., which are not specifically limited here.
  • the display device may be a smart phone, a tablet computer, a notebook computer, a smart bracelet, a smart watch, smart glasses, a smart helmet, a desktop computer, a smart TV, or a digital camera.
  • the present application provides a display panel and a display device.
  • the display panel includes a display area and a binding area adjacent to the display area; the display panel includes a base, and first electrodes stacked on the base, a common layer and a second electrode; wherein, the display panel further includes a first metal layer located between the substrate and the common layer, and the first metal layer is provided with an undercut opening in the display area; wherein, the second electrode is in the undercut opening Connect to the first metal layer.
  • the first metal layer is provided with an undercut opening located in the display area, and the second electrode is connected to the first metal layer in the undercut opening, so that the second electrode in the prior art passes through the display area.
  • the electrical signal introduced by the metal wiring in the display area is introduced through the first metal layer located in the display area, so as to realize narrow frame of the display panel.

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Abstract

一种显示面板及显示装置,显示面板包括显示区(100)和与显示区(100)相邻的绑定区(200);显示面板包括基底(10),及层叠设置于基底(10)上的第一电极(20)、共通层(30)以及第二电极(40);其中,显示面板还包括位于基底(10)和共通层(30)之间的第一金属层(120),第一金属层(120)设有位于显示区(100)的底切开口(1200);其中,第二电极(40)在底切开口(1200)内与第一金属层(120)连接。

Description

显示面板及显示装置 技术领域
本申请涉及显示领域,尤其涉及一种显示面板及显示装置。
背景技术
在现有技术中,有机致发光二极管(Organic Light-Emitting Diode,OLED)包括阳极(Anode)层、阴极(Cathode)层以及位于阳极和阴极之间的有机功能层,在实际制作过程中,采用单独排版的方式制作阳极层,采用高精度金属掩模板(FMMFineMetalMask,FMM)蒸镀的方式在阳极层上制作有机功能层,然后以整面蒸镀的方式制作阴极层。
由于阴极层是整面设置的,而且受空间和制作工艺的限制,阴极信号只能由恒压低电平金属线(VSS)通过屏幕上相对的两个侧边给入,例如通过靠上的侧边和靠下的侧边给入,如此一来,造成了显示面板在恒压低电平金属线附近的边框宽度过大,不利于显示面板的窄边框化。
技术问题
本申请实施例提供一种显示面板及显示装置,用以实现显示面板的窄边框化。
技术解决方案
为实现上述目标,本申请实施例提供了一种显示面板,包括显示区和与所述显示区相邻的绑定区;
所述显示面板包括基底,及层叠设置于所述基底上的第一电极、共通层以及第二电极;
其中,所述显示面板还包括位于所述基底和所述共通层之间的第一金属层,所述第一金属层设有位于所述显示区的底切开口;其中,所述第二电极在所述底切开口内与所述第一金属层连接。
在本实施例所提供的显示面板中,所述第二电极包括位于所述第一金属层上的第一主体部和连接于所述第一主体部的第一连接部;其中,所述第一连接部位于所述底切开口内,所述第一连接部的至少一部分在所述底切开口的内壁处与所述第一主体部断开,所述第一连接部在所述内壁处与所述第一金属层连接。
在本实施例所提供的显示面板中,所述底切开口贯穿所述第一金属层的侧壁,所述第一连接部在所述侧壁处连接于所述第一主体部。
在本实施例所提供的显示面板中,所述共通层包括第二主体部和第二连接部,所述第二主体部位于所述第一金属层和所述第一主体部之间,所述第二连接部位于所述底切开口内,所述第二连接部的至少一部分在所述底切开口的内壁处与所述第一主体部断开,所述第二连接部位于所述第一连接部和所述基底之间。
在本实施例所提供的显示面板中,所述第一金属层包括层叠设置于所述基底上的第二子金属层和第一子金属层,所述底切开口包括设置于所述第一子金属层的第一子底切开口和设置于所述第二子金属层的第二子底切开口,所述第一子底切开口连通所述第二子底切开口,所述第二子底切开口的直径大于所述第一子底切开口的直径。
在本实施例所提供的显示面板中,所述第一金属层包括层叠设置于所述基底上的第三子金属层、第二子金属层和第一子金属层,所述底切开口包括设置于所述第一子金属层的第一子底切开口、设置于所述第二子金属层的第二子底切开口、及设置于所述第三子金属层的第三子底切开口,所述第一子底切开口、所述第二子底切开口以及所述第三子底切开口相互连通,所述第一子底切开口的直径和所述第三子底切开口的直径均小于所述第二子底切开口的直径。
在本实施例所提供的显示面板中,所述共通层包括第二主体部和第二连接部,所述第二主体部位于所述第一金属层和所述第一电极之间,所述第二连接部位于所述底切开口内,其中,所述第二连接部的厚度小于所述第三子底切开口和所述第二子底切开口的厚度之和。
在本实施例所提供的显示面板中,所述第一子金属层的材料为钛金属,所述第二子金属层的材料为铝金属,所述第三子金属层的材料为钛金属。
在本实施例所提供的显示面板中,所述显示面板包括多个间隔设置的子像素,所述第一金属层包括多个位于所述显示区的所述底切开口、及由多个所述底切开口的一端向所述绑定区延伸的多条第一金属走线;
其中,多个所述底切开口和多条所述第一金属走线均位于各所述子像素之间的间隙处。
在本实施例所提供的显示面板中,所述第一金属层还包括位于所述显示区的源漏极层、及位于所述绑定区的多条第二金属走线,多条所述第二金属走线分别与多条所述第一金属走线对应连接。
在本实施例所提供的显示面板中,在平行所述基底的方向上,所述底切开口横截面的形状为Y形、U形或者C形。
本申请还提供一种显示面板,包括显示区;
所述显示面板包括:
基底;
第一导电层,设置于所述基底上;
绝缘层,设置于所述第一导电层上;
第二导电层,设置于所述绝缘层上;
所述第一导电层设有位于所述显示区的开口,所述第二导电层包括位于所述第一导电层上的第一主体部和连接于所述第一主体部的第一连接部;其中,所述第一连接部位于所述开口内,所述第一连接部的至少一部分在所述开口的内壁处与所述第一主体部断开,所述第一连接部在所述内壁处与所述第一导电层连接。
在本实施例所提供的显示面板中,所述开口贯穿所述第一导电层的侧壁,所述第一连接部在所述侧壁处连接于所述第一主体部。
在本实施例所提供的显示面板中,所述绝缘层包括第二主体部和第二连接部,所述第二主体部位于所述第一导电层和所述第一主体部之间,所述第二连接部位于所述开口内,所述第二连接部的至少一部分在所述开口的内壁处与所述第一主体部断开,所述第二连接部位于所述第一连接部和所述基底之间。
在本实施例所提供的显示面板中,所述第一导电层包括层叠设置于所述基底上的第二子导电层和第一子导电层,所述开口包括设置于所述第一子导电层的第一子开口和设置于所述第二子导电层的第二子开口,所述第一子开口连通所述第二子开口,所述第二子开口的直径大于所述第一子开口的直径;
在本实施例所提供的显示面板中,在由第一主体部指向所述第一连接部的方向上,所述开口的内壁的至少一部分与所述开口的中心线的直线距离呈增大的趋势。
本申请还提供一种显示装置,所述显示装置包括显示面板,所述显示面板包括显示区和与所述显示区相邻的绑定区;
所述显示面板包括基底,及层叠设置于所述基底上的第一电极、共通层以及第二电极;
其中,所述显示面板还包括位于所述基底和所述共通层之间的第一金属层,所述第一金属层设有位于所述显示区的底切开口;其中,所述第二电极在所述底切开口内与所述第一金属层连接。
在本实施例所提供的显示装置中,所述第二电极包括位于所述第一金属层上的第一主体部和连接于所述第一主体部的第一连接部;其中,所述第一连接部位于所述底切开口内,所述第一连接部的至少一部分在所述底切开口的内壁处与所述第一主体部断开,所述第一连接部在所述内壁处与所述第一金属层连接。
在本实施例所提供的显示装置中,所述底切开口贯穿所述第一金属层的侧壁,所述第一连接部在所述侧壁处连接于所述第一主体部。
在本实施例所提供的显示装置中,所述共通层包括第二主体部和第二连接部,所述第二主体部位于所述第一金属层和所述第一主体部之间,所述第二连接部位于所述底切开口内,所述第二连接部的至少一部分在所述底切开口的内壁处与所述第一主体部断开,所述第二连接部位于所述第一连接部和所述基底之间。
有益效果
本申请实施例提供一种显示面板及显示装置,所述显示面板包括显示区和与所述显示区相邻的绑定区;所述显示面板包括基底,及层叠设置于所述基底上的第一电极、共通层以及第二电极;其中,所述显示面板还包括位于所述基底和所述共通层之间的第一金属层,通过在所述第一金属层上设有位于所述显示区的底切开口,所述第二电极在所述底切开口内与所述第一金属层连接,从而将现有技术中所述第二电极通过环绕所述显示区的金属走线引入的电信号,经由位于所述显示区内的所述第一金属层引入,以实现所述显示面板的窄边框化。
附图说明
图1为现有技术中显示面板的俯视图;
图2为本申请实施例所提供的显示面板的俯视图;
图3为图2沿A-A方向的第一种截面图;
图4为本申请实施例所提供的第一金属层的第一种结构示意图;
图5为图2沿B-B方向的第一种截面图;
图6为图2沿C-C方向的截面图;
图7A~图7C为本申请实施例所提供的第一金属层的俯视图;
图8为图2沿A-A方向的第二种截面图
图9为本申请实施例所提供的第一金属层的第二种结构示意图
图10为图2沿B-B方向的第二种截面图。
本发明的实施方式
本申请提供一种显示面板及显示装置,为使本申请的目的、技术方案及效果更加清楚、明确,以下参照附图并举实施例对本申请进一步详细说明。应当理解,此处所描述的具体实施例仅用以解释本申请,并不用于限定本申请。
本申请实施例提供一种显示面板及显示装置。以下分别进行详细说明。需说明的是,以下实施例的描述顺序不作为对实施例优选顺序的限定。
请参阅图1,现有技术中显示面板的俯视图。
在现有技术中,所述显示面板包括显示区100和与所述显示区100相邻的绑定区200,所述显示面板包括层叠设置于基底10上的阳极层(图中未画出)、阴极层11以及位于所述阳极层和所述阴极层11之间的共通层(图中未画出);所述显示面板还包括位于所述绑定区的覆晶薄膜13,所述覆晶薄膜13通过恒压低电平金属线(VSS)12向所述阴极层11传输阴极信号;其中,在实际制作过程中,采用单独排版的方式制作所述阳极层,采用高精度金属掩模板蒸镀的方式在所述阳极层上制作所述共通层,然后以整面蒸镀的方式制作所述阴极层11。
由于阴极层11是整面设置的,而且受空间和制作工艺的限制,阴极信号只能由所述恒压低电平金属线12通过屏幕上相对的两个侧边给入,例如通过靠上的侧边和靠下的侧边给入,如此一来,造成了所述显示面板在恒压低电平金属线12附近的边框宽度过大,不利于所述显示面板的窄边框化。基于此,本申请实施例提供一种显示面板及显示装置用以改善上述缺陷。
请结合图2~图7C,本申请提供一种显示面板及显示装置,所述显示面板包括显示区100;所述显示面板包括基底10,及层叠设置于所述基底10上的第一电极20、共通层30以及第二电极40;其中,所述显示面板还包括位于所述基底10和所述共通层30之间的第一金属层120,所述第一金属层120设有位于所述显示区100的底切开口1200;其中,所述第二电极40在所述底切开口1200内与所述第一金属层120连接。本申请通过在所述第一金属层120设有位于所述显示区100的所述底切开口1200,所述第二电极40在所述底切开口1200内与所述第一金属层120连接,从而实现所述显示面板的窄边框化。
现结合具体实施例对本申请的技术方案进行描述。
实施例一
请结合图2和图3;其中,图2为本申请实施例所提供的显示面板的俯视图;图3为图2沿A-A方向的第一种截面图。
本实施例提供一种显示面板,所述显示面板包括显示区100和与显示区100相邻的绑定区200;所述显示面板包括基底10,及层叠设置于所述基底10上的第一电极20、共通层30以及第二电极40。
需要说明的是,所述显示面板包括但不限于有机致发光二极管(Organic Light-Emitting Diode,OLED),进一步地,在本实施例中以所述显示面板为机致发光二极管为例对本实施例的技术方案进行描述。
在本实施例中,所述基底10可以包括刚性衬底或柔性衬底,当基底10为刚性衬底时,材料可以是金属或玻璃,当基底10为柔性衬底时,材料可以包括丙烯酸树脂、甲基丙烯酸树脂、聚异戊二烯、乙烯基树脂、环氧基树脂、聚氨酯基树脂、纤维素树脂、硅氧烷树脂、聚酰亚胺基树脂、聚酰胺基树脂中的至少一种。本实施例对所述基底10的材料不做限制。
在本实施例中,所述第一电极20包括但不限于阳极,所述第二电极40包括但不限于阴极,所述共通层30包括但不限于空穴注入层、空穴传输层、发光层、电子缓冲层以及电子传输层,本实施例对此不做具体限制。
具体地,所述显示面板包括位于所述基底10与所述第一电极20之间的有源层50、第一绝缘层60、栅极70、第二绝缘层80、源漏电极90以及第三绝缘层110;其中,所述显示面板还包括位于所述基底10和所述共通层30之间的第一金属层120。
可以理解的是,所述显示面板包括位于所述基底10与所述第一电极20之间的有源层50、第一绝缘层60、栅极70、第二绝缘层80、源漏电极90以及第三绝缘层110仅用作举例说明,本实施例对所述显示面板的膜层结构不做限制。
请参阅图4,本申请实施例所提供的第一金属层的第一种结构示意图。
在本实施例中,所述第一金属层120设有位于所述显示区100的底切开口1200,所述底切开口1200内壁的至少一部分与开口的中心线的直线距离呈增大的趋势,用于使形成于其内的膜层在内壁处断开。
进一步地,在本实施例中,所述第一金属层120包括层叠设置于所述基底10上的第二子金属层122和第一子金属层121,所述底切开口1200包括设置于所述第一子金属层121的第一子底切开口1201和设置于所述第二子金属层122的第二子底切开口1202,所述第一子底切开口1201连通所述第二子底切开口1202,所述第二子底切开口1202的直径大于所述第一子底切开口1201的直径,从而使所述底切开口1200在垂直所述基底10方向上的横截面积呈减小的趋势,用于使形成于其内的膜层在内壁处断开。
需要说明的是,所述第一子底切开口1201的直径大小和所述第二子底切开口1202的直径大小均与实际制备工艺有关,本实施例对此不做具体限制。
在本实施例中,所述第一子金属层121的材料包括但不限于钛金属和钼金属,所述第二子金属层122的材料包括但不限于铝金属,本实施例以所述第一子金属层121的材料为钛金属、所述第二子金属层122的材料为铝金属为例进行举例说明。
需要说明的是,在本实施例中,所述底切开口1200通过湿法刻蚀掉所述第一子金属层121和第二子金属层122而形成的,其中,由于所述第一子金属层121的材料和所述第二子金属层122的材料不同,因此当两者同时进行湿法刻蚀时,所述第一子金属层121的刻蚀速率和所述第二子金属层122的刻蚀速率会有较大差异,具体地,所述第二子金属层122的刻蚀速率大于所述第一子金属层121的刻蚀速率,从而形成开口直径不同的所述第一子底切开口1201和所述第二子底切开口1202。进一步地,所述第三绝缘层110设有一开孔(图中未标记),所述开孔至少暴露所述底切开口1200。
可以理解的是,在本实施例中,所述底切开口1200通过湿法刻蚀掉所述第一子金属层121和所述第二子金属层122而形成仅用作举例说明,本实施例对所述底切开口1200的制备方法不做具体限制。
请结合图2、图3、图5和图6;其中,图5为图2沿B-B方向的第一种截面图;图6为图2沿C-C方向的截面图。
在本实施例中,所述第二电极40包括位于所述第一金属层120上的第一主体部41和连接于所述第一主体部41的第一连接部42;其中,所述第一连接部42位于所述底切开口1200内,所述第一连接部42的至少一部分在所述底切开口1200的内壁处与所述第一主体部41断开,所述第一连接部42在所述内壁处与所述第一金属层120连接,从而实现所述第二电极40在所述底切开口1200内与所述第一金属层120连接。
具体地,所述底切开口1200贯穿所述第一金属层120的侧壁,所述第一连接部42在所述侧壁处连接于所述第一主体部41。可以理解的是,所述第一金属层120侧壁包括第一侧壁(图中未标记),第二侧壁(图中未标记)以及第三侧壁(图中未标记),所述第一侧壁,所述第二侧壁以及所述第三侧壁平滑过度,且所述第三侧壁位于所述第一侧壁和所述第二侧壁之间,在本实施例中,对所述第一连接部42和所述第一主体部41连接的位置不做具体限制,即所述第一连接部42在所述第一侧壁处与所述第一主体部41连接、或所述第一连接部42在所述第二侧壁处与所述第一主体部41连接、或所述第一连接部42在所述第三侧壁处与所述第一主体部41连接。
在本实施例中,所述共通层30包括第二主体部31和第二连接部32,所述第二主体部31位于所述第一金属层120和所述第一主体部41之间,所述第二连接部32位于所述底切开口1200内,所述第二连接部32的至少一部分在所述底切开口1200的内壁处与所述第一主体部41断开,所述第二连接部32位于所述第一连接部42和所述基底10之间,从而使所述第二连接部32对所述第一连接部42起到支撑的作用,使所述第一连接部42升高,增大所述第一连接部42与所述第一金属层120侧壁的接触面积,进而提高所述第二电极40与所述第一金属层120的连接效果。可以理解的是,在本实施例中,所述第二连接部32的厚度小于所述第二子底切开口1202的厚度,从而避免所述第一连接部42与所述第一金属层120侧壁的接触面积过小,从而影响所述第二电极40与所述第一金属层120的连接效果。
进一步地,在本实施例中,所述显示面板包括多个间隔设置的子像素130,所述第一金属层120包括多个位于所述显示区100的所述底切开口1200、及由多个所述底切开口1200的一端向所述绑定区200延伸的多条第一金属走线124;其中,多个所述底切开口1200和多条所述第一金属走线124均位于各所述子像素130之间的间隙处,从而不会影响所述显示区100中各所述子像素130的正常显示。
可以理解的是,在本实施例中,所述第一金属走线124可以沿第一方向或第二方向延伸,可以贯穿相邻两列所述子像素130之间的间隙,也可以只延伸至所述显示面板的中间位置处,本实施例对此不做具体限制;同时,所述第一金属走线124可以为直线或者折线,本实施例对所述第一金属走线124的形状不做具体限定;其中,所述第一方向为X方向,所述第二方向为Y方向,所述第一方向与所述第二方向垂直。
需要说明的是,在本实施例中,所述显示区100包括第一显示区101和第二显示区102,所述第二显示区102位于所述第一显示区101和所述绑定区200之间,所述底切开口1200位于所述第一显示区101,或所述底切开口1200由所述第二显示区102向所述第一显示区101延伸,本实施例所述底切开口1200的长度不做限制。进一步地,本实施例以所述底切开口1200位于所述第一显示区101为例进行举例说明。
在本实施例中,所述显示面板还包括位于所述绑定区200的覆晶薄膜13,所述第一金属层120还包括位于所述绑定区200的多条第二金属走线125,多条所述第二金属走线125分别与多条所述第一金属走线124对应连接,所述覆晶薄膜13通过所述第二金属走线125向所述第一金属走线124传递电信号。在本实施例中,所述第二金属走线125包括但不限于恒压低电平金属线(VSS),所述第二金属走线125的一端与所述第一金属走线124连接,所述第二金属走线125的另一端与所述覆晶薄膜13连接,从而将电信号经由所述第一金属走线124传送到所述第二电极40上。
可以理解的是,在本实施例中,所述第一金属走线124、所述第二金属走线125以及所述源漏电极90同层设置,三者可以在同一工序中制作,从而能最大化的减少对所述显示面板厚度的影响。
本实施例提供一种显示面板,所述显示面板包括显示区100和与所述显示区100相邻的绑定区200;所述显示面板包括基底10,及层叠设置于所述基底10上的第一电极20、共通层30以及第二电极40,其中,所述第一电极20为阳极,所述共通层30包括层叠设置与所述第一电极20上的空穴注入层、空穴传输层、发光层、电子缓冲层以及电子传输层,所述第二电极40为阴极;所述显示面板还包括位于所述基底10和所述共通层30之间的第一金属层120,所述第一金属层120包括多个位于所述显示区100的所述底切开口1200、由多个所述底切开口1200的一端向所述绑定区200延伸的多条第一金属走线124、及位于所述绑定区200的多条第二金属走线125。其中,所述第二电极40在所述底切开口1200内与所述第一金属层120连接,所述第二金属走线125为恒压低电平金属线。
本实施例通过将所述第二电极40在所述底切开口1200内与所述第一金属层120连接,所述第一金属层120连接包括多个所述底切开口1200的一端向所述绑定区200延伸的多条所述第一金属走线124、及位于所述绑定区200的多条所述第二金属走线125,从而可以通过所述第一金属走线124将所述阴极信号传送到所述第二电极40上,进而将现有技术中通过环绕所述显示区100的金属走线引入的电信号,经由位于所述显示区100内的所述第一金属层120引入,以实现所述显示面板的窄边框化。
需要说明的是,请结合图7A~图7C,本申请实施例所提供的第一金属层120的俯视图。在平行所述基底10的方向上,所述底切开口1200横截面的形状包括但不限于Y形、U形或者C形,本实施例对此不做具体限制。可以理解的是,本实施例通过将所述底切开口1200设计成半封闭结构,可限制所述第二电极40的第一连接部42位于由所述底切开口1200形成的合围区域内,从而保证所述第二电极40与所述第一金属层120的连接效果。
实施例二,
请结合图2、图8、图9和图10;其中,图8为图2沿A-A方向的第二种截面图;图9为本申请实施例所提供的第一金属层120的第二种结构示意图;图10为图2沿B-B方向的第二种截面图。
在本实施例中,所述显示模组的结构与上述实施例所提供的显示面板的第一种结构相似/相同,具体请参照上述实施例中的显示面板的描述,此处不再赘述,两者的区别仅在于:
在本实施例中,所述第一金属层120设有位于所述显示区100的底切开口1200,所述底切开口1200内壁的至少一部分与开口的中心线的直线距离呈先增大后减小的趋势,用于使形成于其内的膜层在内壁处断开。
进一步地,在本实施例中,所述第一金属层120包括层叠设置于所述基底10上的第三子金属层123、第二子金属层122和第一子金属层121,所述底切开口1200包括设置于所述第一子金属层121的第一子底切开口1201、设置于所述第二子金属层122的第二子底切开口1202、及设置于所述第三子金属层123的第三子底切开口1203,所述第一子底切开口1201、所述第二子底切开口1202以及所述第三子底切开口1203相互连通,所述第一子底切开口1201的直径和所述第三子底切开口1203的直径均小于所述第二子底切开口1202的直径,从而使所述底切开口1200在垂直所述基底10方向上的横截面积呈先增大后减小的趋势,用于使形成于其内的膜层在内壁处断开。
需要说明的是,所述第一子底切开口1201的直径大小、所述第二子底切开口1202的直径大小以及所述第三子底切开口1203的直径大小均与实际制备工艺有关,本实施例对此不做具体限制。
在本实施例中,所述第一子金属层121的材料包括但不限于钛金属和钼金属,所述第二子金属层122的材料包括但不限于铝金属,所述第三子金属层123的材料包括但不限于钛金属和钼金属,本实施例以所述第一子金属层121的材料为钛金属、所述第二子金属层122的材料为铝金属、所述第三子金属层123的材料为钛金属为例进行举例说明。
需要说明的是,在本实施例中,所述底切开口1200通过湿法刻蚀掉所述第一子金属层121、所述第二子金属层122以及所述第三子金属层123而形成的,其中,由于所述第一子金属层121的材料和所述第二子金属层122的材料不同,所述第一子金属层121的材料和所述第三子金属层123的材料相同,因此当三者同时进行湿法刻蚀时,所述第一子金属层121的刻蚀速率和所述第三子金属层123的刻蚀速率相同,所述第一子金属层121的刻蚀速率和所述第二子金属层122的刻蚀速率会有较大差异,具体地,所述第二子金属层122的刻蚀速率大于所述第一子金属层121的刻蚀速率,所述第二子金属层122的刻蚀速率大于所述第三子金属层123的刻蚀速率,从而形成开口直径不同的所述第一子底切开口1201、所述第二子底切开口1202以及所述第三子底切开口1203。进一步地,所述第三绝缘层110设有一开孔(图中未标记),所述开孔至少暴露所述底切开口1200。
可以理解的是,所述底切开口1200通过湿法刻蚀掉所述第一子金属层121、所述第二子金属层122以及所述第三子金属层123而形成的仅用作举例说明,本实施例对所述底切开口1200的制备方法不做具体限制。
在本实施例中,所述第二电极40包括位于所述第一金属层120上的第一主体部41和连接于所述第一主体部41的第一连接部42;其中,所述第一连接部42位于所述底切开口1200内,所述第一连接部42的至少一部分在所述底切开口1200的内壁处与所述第一主体部41断开,所述第一连接部42在所述内壁处与所述第一金属层120连接,从而实现所述第二电极40在所述底切开口1200内与所述第一金属层120连接。
具体地,所述底切开口1200贯穿所述第一金属层120的侧壁,所述第一连接部42在所述侧壁处连接于所述第一主体部41。可以理解的是,所述第一金属层120侧壁包括第一侧壁(图中未标记),第二侧壁(图中未标记)以及第三侧壁(图中未标记),所述第一侧壁,所述第二侧壁以及所述第三侧壁平滑过度,且所述第三侧壁位于所述第一侧壁和所述第二侧壁之间,在本实施例中,对所述第一连接部42和所述第一主体部41连接的位置不做具体限制,即所述第一连接部42在所述第一侧壁处与所述第一主体部41连接、或所述第一连接部42在所述第二侧壁处与所述第一主体部41连接、或所述第一连接部42在所述第三侧壁处与所述第一主体部41连接。
在本实施例中,所述共通层30包括第二主体部31和第二连接部32,所述第二主体部31位于所述第一金属层120和所述第一主体部41之间,所述第二连接部32位于所述底切开口1200内,所述第二连接部32的至少一部分在所述底切开口1200的内壁处与所述第一主体部41断开,所述第二连接部32位于所述第一连接部42和所述基底10之间,从而使所述第二连接部32对所述第一连接部42起到支撑的作用,使所述第一连接部42抬高,增大所述第一连接部42与所述第一金属层120侧壁的接触面积,进而提高所述第二电极40与所述第一金属层120的连接效果。可以理解的是,在本实施例中,所述第二连接部32的厚度小于所述第三子底切开口1203和所述第二子底切开口1202的厚度之和,从而避免所述第一连接部42与所述第一金属层120侧壁的接触面积过小,从而影响所述第二电极40与所述第一金属层120的连接效果。
实施例三
本申请实施例还提供了一种显示面板,包括显示区,所述显示面板包括基底;第一导电层,设置于所述基底上;绝缘层,设置于所述第一导电层上;第二导电层,设置于所述绝缘层上;所述第一导电层设有位于所述显示区的开口,所述第二导电层包括位于所述第一导电层上的第一主体部和连接于所述第一主体部的第一连接部;其中,所述第一连接部位于所述开口内,所述第一连接部的至少一部分在所述开口的内壁处与所述第一主体部断开,所述第一连接部在所述内壁处与所述第一导电层连接。
需要说明的是,在本实施例中,对所述第一导电层、所述绝缘层以及所述第二导电层的种类不做具体限制。
在本实施例中,所述显示面板还包括与所述显示区相邻的绑定区,所述显示面板包括位于所述绑定区的覆晶薄膜,所述第一导电层包括多个位于所述显示区的所述开口、由多个所述开口的一端向所述绑定区延伸的多条第一金属走线、及位于所述绑定区的多条第二金属走线,多条所述第二金属走线分别与多条所述第一金属走线对应连接,所述覆晶薄膜通过所述第二金属走线向所述第一金属走线传递电信号。
在本实施例中,所述开口贯穿所述第一导电层的侧壁,所述第一连接部在所述侧壁处连接于所述第一主体部。
在本实施例中,所述绝缘层包括第二主体部和第二连接部,所述第二主体部位于所述第一导电层和所述第一主体部之间,所述第二连接部位于所述开口内,所述第二连接部的至少一部分在所述开口的内壁处与所述第一主体部断开,所述第二连接部位于所述第一连接部和所述基底之间。
在本实施例中,所述第一导电层包括层叠设置于所述基底上的第二子导电层和第一子导电层,所述开口包括设置于所述第一子导电层的第一子开口和设置于所述第二子导电层的第二子开口,所述第一子开口连通所述第二子开口,所述第二子开口的直径大于所述第一子开口的直径。
在本实施例中,在由第一主体部指向所述第一连接部的方向上,所述开口的内壁的至少一部分与所述开口的中心线的直线距离呈增大的趋势,用于使形成于其内的膜层在内壁处断开。
需要说明的是,在另一实施例中,所述第一导电层包括层叠设置于所述基底上的第三子导电层、第二子导电层和第一子导电层,所述开口包括设置于所述第一子导电层的第一子开口、设置于所述第二子导电层的第二子开口、及设置于所述第三子导电层的第三子开口,所述第一子开口、所述第二子开口以及所述第三子开口相互连通,所述第一子开口的直径和所述第三子开口的直径均小于所述第二子开口的直径,从而使所述开口在垂直所述基底方向上的横截面积呈先增大后减小的趋势,用于使形成于其内的膜层在内壁处断开。
本实施例通过设置所述第一导电层包括多个位于所述显示区的所述开口、由多个所述开口的一端向所述绑定区延伸的多条第一金属走线、及位于所述绑定区的多条第二金属走线,多条所述第二金属走线分别与多条所述第一金属走线对应连接,所述覆晶薄膜通过所述第二金属走线向所述第一金属走线传递电信号,进而将现有技术中通过环绕所述显示区的金属走线引入的电信号,经由位于所述显示区内的所述第一导电层引入,以实现所述显示面板的窄边框化。
实施例四
本申请实施例还提供了一种显示装置,包括如上述实施例所述的显示面板及终端主体,所述终端主体与所述显示面板组合为一体。
其中,所述显示面板的具体结构请参阅任一上述实施例的显示面板的实施例,本申请实施例在此不再赘述。
本实施例中,所述终端主体可以包括中框、框胶等,在此不做具体限定。
在具体应用时,所述显示装置可以为智能手机、平板电脑、笔记本电脑、智能手环、智能手表、智能眼镜、智能头盔、台式机电脑、智能电视或者数码相机等。
综上所述,本申请提供一种显示面板及显示装置,该显示面板包括显示区和与显示区相邻的绑定区;显示面板包括基底,及层叠设置于基底上的第一电极、共通层以及第二电极;其中,显示面板还包括位于基底和共通层之间的第一金属层,第一金属层设有位于显示区的底切开口;其中,第二电极在底切开口内与第一金属层连接。本申请通过在第一金属层设有位于显示区的底切开口,第二电极在底切开口内与第一金属层连接,从而将现有技术中所述第二电极通过环绕所述显示区的金属走线引入的电信号,经由位于所述显示区内的所述第一金属层引入,以实现所述显示面板的窄边框化。
可以理解的是,对本领域普通技术人员来说,可以根据本申请的技术方案及其发明构思加以等同替换或改变,而所有这些改变或替换都应属于本申请所附的权利要求的保护范围。

Claims (20)

  1. 一种显示面板,其中,包括显示区和与所述显示区相邻的绑定区;
    所述显示面板包括基底,及层叠设置于所述基底上的第一电极、共通层以及第二电极;
    其中,所述显示面板还包括位于所述基底和所述共通层之间的第一金属层,所述第一金属层设有位于所述显示区的底切开口;其中,所述第二电极在所述底切开口内与所述第一金属层连接。
  2. 如权利要求1所述的显示面板,其中,所述第二电极包括位于所述第一金属层上的第一主体部和连接于所述第一主体部的第一连接部;其中,所述第一连接部位于所述底切开口内,所述第一连接部的至少一部分在所述底切开口的内壁处与所述第一主体部断开,所述第一连接部在所述内壁处与所述第一金属层连接。
  3. 如权利要求2所述的显示面板,其中,所述底切开口贯穿所述第一金属层的侧壁,所述第一连接部在所述侧壁处连接于所述第一主体部。
  4. 如权利要求2所述的显示面板,其中,所述共通层包括第二主体部和第二连接部,所述第二主体部位于所述第一金属层和所述第一主体部之间,所述第二连接部位于所述底切开口内,所述第二连接部的至少一部分在所述底切开口的内壁处与所述第一主体部断开,所述第二连接部位于所述第一连接部和所述基底之间。
  5. 如权利要求1所述的显示面板,其中,所述第一金属层包括层叠设置于所述基底上的第二子金属层和第一子金属层,所述底切开口包括设置于所述第一子金属层的第一子底切开口和设置于所述第二子金属层的第二子底切开口,所述第一子底切开口连通所述第二子底切开口,所述第二子底切开口的直径大于所述第一子底切开口的直径。
  6. 如权利要求1所述的显示面板,其中,所述第一金属层包括层叠设置于所述基底上的第三子金属层、第二子金属层和第一子金属层,所述底切开口包括设置于所述第一子金属层的第一子底切开口、设置于所述第二子金属层的第二子底切开口、及设置于所述第三子金属层的第三子底切开口,所述第一子底切开口、所述第二子底切开口以及所述第三子底切开口相互连通,所述第一子底切开口的直径和所述第三子底切开口的直径均小于所述第二子底切开口的直径。
  7. 如权利要求6所述的显示面板,其中,所述共通层包括第二主体部和第二连接部,所述第二主体部位于所述第一金属层和所述第一电极之间,所述第二连接部位于所述底切开口内,其中,所述第二连接部的厚度小于所述第三子底切开口和所述第二子底切开口的厚度之和。
  8. 如权利要求7所述的显示面板,其中,所述第一子金属层的材料为钛金属,所述第二子金属层的材料为铝金属,所述第三子金属层的材料为钛金属。
  9. 如权利要求1所述的显示面板,其中,所述显示面板包括多个间隔设置的子像素,所述第一金属层包括多个位于所述显示区的所述底切开口、及由多个所述底切开口的一端向所述绑定区延伸的多条第一金属走线;
    其中,多个所述底切开口和多条所述第一金属走线均位于各所述子像素之间的间隙处。
  10. 如权利要求9所述的显示面板,其中,所述第一金属层还包括位于所述显示区的源漏极层、及位于所述绑定区的多条第二金属走线,多条所述第二金属走线分别与多条所述第一金属走线对应连接。
  11. 如权利要求1所述的显示面板,其中,在平行所述基底的方向上,所述底切开口横截面的形状为Y形、U形或者C形。
  12. 一种显示面板,其中,包括显示区和与所述显示区相邻的绑定区;
    所述显示面板包括:
    基底;
    第一导电层,设置于所述基底上;
    绝缘层,设置于所述第一导电层上;
    第二导电层,设置于所述绝缘层上;
    所述第一导电层设有位于所述显示区的开口,所述第二导电层包括位于所述第一导电层上的第一主体部和连接于所述第一主体部的第一连接部;其中,所述第一连接部位于所述开口内,所述第一连接部的至少一部分在所述开口的内壁处与所述第一主体部断开,所述第一连接部在所述内壁处与所述第一导电层连接。
  13. 如权利要求12所述的显示面板,其中,所述开口贯穿所述第一导电层的侧壁,所述第一连接部在所述侧壁处连接于所述第一主体部。
  14. 如权利要求12所述的显示面板,其中,所述绝缘层包括第二主体部和第二连接部,所述第二主体部位于所述第一导电层和所述第一主体部之间,所述第二连接部位于所述开口内,所述第二连接部的至少一部分在所述开口的内壁处与所述第一主体部断开,所述第二连接部位于所述第一连接部和所述基底之间。
  15. 如权利要求12所述的显示面板,其中,所述第一导电层包括层叠设置于所述基底上的第二子导电层和第一子导电层,所述开口包括设置于所述第一子导电层的第一子开口和设置于所述第二子导电层的第二子开口,所述第一子开口连通所述第二子开口,所述第二子开口的直径大于所述第一子开口的直径。
  16. 如权利要求15所述的显示面板,其中,在由第一主体部指向所述第一连接部的方向上,所述开口的内壁的至少一部分与所述开口的中心线的直线距离呈增大的趋势。
  17. 一种显示装置,其中,所述显示装置包括显示面板,所述显示面板包括显示区和与所述显示区相邻的绑定区;
    所述显示面板包括基底,及层叠设置于所述基底上的第一电极、共通层以及第二电极;
    其中,所述显示面板还包括位于所述基底和所述共通层之间的第一金属层,所述第一金属层设有位于所述显示区的底切开口;其中,所述第二电极在所述底切开口内与所述第一金属层连接。
  18. 如权利要求17所述的显示装置,其中,所述第二电极包括位于所述第一金属层上的第一主体部和连接于所述第一主体部的第一连接部;其中,所述第一连接部位于所述底切开口内,所述第一连接部的至少一部分在所述底切开口的内壁处与所述第一主体部断开,所述第一连接部在所述内壁处与所述第一金属层连接。
  19. 如权利要求18所述的显示装置,其中,所述底切开口贯穿所述第一金属层的侧壁,所述第一连接部在所述侧壁处连接于所述第一主体部。
  20. 如权利要求18所述的显示装置,其中,所述共通层包括第二主体部和第二连接部,所述第二主体部位于所述第一金属层和所述第一主体部之间,所述第二连接部位于所述底切开口内,所述第二连接部的至少一部分在所述底切开口的内壁处与所述第一主体部断开,所述第二连接部位于所述第一连接部和所述基底之间。
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