WO2023032314A1 - 発光デバイスおよび電子機器 - Google Patents
発光デバイスおよび電子機器 Download PDFInfo
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- WO2023032314A1 WO2023032314A1 PCT/JP2022/012796 JP2022012796W WO2023032314A1 WO 2023032314 A1 WO2023032314 A1 WO 2023032314A1 JP 2022012796 W JP2022012796 W JP 2022012796W WO 2023032314 A1 WO2023032314 A1 WO 2023032314A1
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- Prior art keywords
- light emitting
- light
- emitting element
- semiconductor light
- layer
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Images
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
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- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/302—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements characterised by the form or geometrical disposition of the individual elements
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- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0756—Stacked arrangements of devices
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Definitions
- the present disclosure relates to a light-emitting device and electronic equipment including the same.
- the light emitted from the semiconductor light-emitting elements in the lower layer is blocked by the semiconductor light-emitting elements in the upper layer, so the luminance may decrease.
- An object of the present disclosure is to provide a light-emitting device capable of suppressing a decrease in brightness and an electronic device including the same.
- the first disclosure is sequentially comprising a substrate, a first layer, and a second layer; the first layer includes a plurality of first semiconductor light emitting elements; the second layer includes a plurality of second semiconductor light emitting elements; The plurality of first semiconductor light emitting elements are arranged in an in-plane direction of the substrate and can emit first light having a first peak wavelength,
- the first semiconductor light emitting device has a first region and a second region, the first region is provided in a peripheral portion of the first semiconductor light emitting device, and emits the first light.
- the second semiconductor light emitting element is arranged in the in-plane direction of the substrate and can emit second light having a second peak wavelength different from the first peak wavelength,
- the first semiconductor light-emitting element and the second semiconductor light-emitting element are light-emitting devices that are displaced in the in-plane direction of the substrate.
- the second disclosure is sequentially comprising a substrate, a first layer, and a second layer; the first layer includes a plurality of first semiconductor light emitting elements; the second layer includes a plurality of second semiconductor light emitting elements;
- the plurality of first semiconductor light emitting elements includes a first light emitting layer, is arranged in an in-plane direction of the substrate, and can emit first light having a first peak wavelength
- the plurality of second semiconductor light emitting elements includes a second light emitting layer, is arranged in an in-plane direction of the substrate, and emits second light having a second peak wavelength different from the first peak wavelength.
- the carrier diffusion length of the first light emitting layer is longer than the carrier diffusion length of the second light emitting layer.
- a third disclosure is an electronic device comprising the light emitting device of the first disclosure or the second disclosure.
- the first peak wavelength of the first light means the wavelength of the peak with the maximum intensity among the plurality of peaks.
- the second peak wavelength of the second light means the wavelength of the maximum intensity peak among the plurality of peaks.
- the third peak wavelength of the third light means the wavelength of the maximum intensity peak among the plurality of peaks.
- the fourth peak wavelength of the fourth light means the wavelength of the maximum intensity peak among the multiple peaks.
- the first light and the second light may be lights of different colors.
- the first light, the second light, and the third light may all be lights of different colors.
- the first light and the fourth light may be lights of the same color.
- Each of the first light and the fourth light may independently be red light or infrared light.
- the infrared light may be near-infrared light.
- the second light and the third light may each independently be blue light, green light, yellow light or ultraviolet light.
- the ultraviolet light may be short wavelength ultraviolet (UV-C), medium wavelength ultraviolet (UV-B) or long wavelength ultraviolet (UV-A).
- Ultraviolet light is light having spectral characteristics with a peak half-value width (full width at half maximum) or a peak wavelength in the range of 100 nm or more and 380 nm or less.
- Short-wave ultraviolet rays are light having spectral characteristics with a peak half-value width (full width at half maximum) or a peak wavelength in the range of 100 nm or more and 280 nm or less.
- Medium-wave ultraviolet rays (UV-B) are light having spectral characteristics with a peak half-value width (full width at half maximum) or a peak wavelength in the range of more than 280 nm and 315 nm or less.
- UV-A Long-wavelength ultraviolet rays
- Blue light is light having spectral characteristics with a peak half-value width (full width at half maximum) or a peak wavelength in the range of 315 nm or more and 380 nm or less.
- Blue light is light having spectral characteristics with a peak half-value width (full width at half maximum) or a peak wavelength in the range of more than 380 nm and 490 nm or less.
- Green light is light having spectral characteristics in which the peak half width (full width at half maximum) or peak wavelength is in the range of more than 490 nm and 550 nm or less.
- Yellow light is light having spectral characteristics in the range of more than 550 nm and less than or equal to 590 nm.
- Red light is light having spectral characteristics in which the peak half width (full width at half maximum) or peak wavelength is in the range of more than 590 nm and 780 nm or less.
- Infrared light is light having spectral characteristics with a peak half-value width (full width at half maximum) or a peak wavelength in the range of more than 780 nm and less than or equal to 1 mm.
- Near-infrared light is light having a spectral characteristic with a peak half-value width (full width at half maximum) or a peak wavelength in the range of more than 780 nm and 2.5 ⁇ m or less.
- the plurality of first semiconductor light emitting elements may include a plurality of semiconductor light emitting elements capable of emitting red light and a plurality of semiconductor light emitting elements capable of emitting infrared light.
- the plurality of fourth semiconductor light emitting elements may include a plurality of semiconductor light emitting elements capable of emitting red light and a plurality of semiconductor light emitting elements capable of emitting infrared light.
- the plurality of second semiconductor light emitting elements may include a plurality of semiconductor light emitting elements capable of emitting green light and a plurality of semiconductor light emitting elements capable of emitting ultraviolet light.
- the plurality of third semiconductor light emitting elements may include a plurality of semiconductor light emitting elements capable of emitting blue light and a plurality of semiconductor light emitting elements capable of emitting ultraviolet light.
- FIG. 1 is a plan view showing an example of the configuration of the display device according to the first embodiment.
- FIG. 2A is a plan view showing an example of a pixel configuration.
- FIG. 2B is a perspective view of a pixel viewed from the direction of arrow 102A in FIG. 2A.
- FIG. 3 is a plan view showing an example of the configuration of the first layer.
- FIG. 4 is a plan view showing an example of the configuration of the second layer.
- FIG. 5A is a cross-sectional view showing an example of the configuration of the first compound semiconductor light emitting device.
- FIG. 5B is a cross-sectional view showing an example of the configuration of the second compound semiconductor light-emitting device.
- FIG. 5C is a cross-sectional view showing an example of the configuration of the third compound semiconductor light-emitting device.
- FIG. 6 is a cross-sectional view showing an example of the configuration of the first compound semiconductor light-emitting device.
- FIG. 7 shows the sum S RGB of the area S R of the first compound semiconductor light emitting element, the area S G of the second compound semiconductor light emitting element, and the area S B of the third compound semiconductor light emitting element, and the area of one pixel.
- FIG. 2 is a diagram for explaining an example of SPIX ;
- FIG. 8 is a plan view showing an example of the configuration of the display device according to the second embodiment.
- FIG. 9A is a plan view showing an example of a pixel configuration.
- FIG. 9B is a perspective view of a pixel viewed from the direction of arrow 202A in FIG. 9A.
- FIG. 10 is a cross-sectional view showing an example of the configuration of a fourth compound semiconductor light-emitting device.
- 11A and 11B are cross-sectional views showing modifications of the first compound semiconductor light-emitting device.
- FIG. 12 is a plan view showing a modification of the first compound semiconductor light emitting device.
- FIG. 13 is a plan view showing a modification of the first compound semiconductor light emitting device.
- FIG. 14 is a plan view showing modifications of the first compound semiconductor light-emitting device, the second compound semiconductor light-emitting device, and the third compound semiconductor light-emitting device.
- FIG. 15 is a plan view showing modifications of the first compound semiconductor light-emitting device, the second compound semiconductor light-emitting device, and the third compound semiconductor light-emitting device.
- 16A and 16B are plan views for explaining modifications of the second compound semiconductor light-emitting device.
- FIG. 17A is a front view showing an example of the appearance of a digital still camera.
- FIG. 17B is a rear view showing an example of the appearance of the digital still camera.
- FIG. 18 is a perspective view of an example of the appearance of a head mounted display.
- FIG. 19 is a perspective view showing an example of the appearance of the television device.
- FIG. 1 is a plan view showing an example of the configuration of a display device 100 according to the first embodiment.
- a display device 100 includes a driving substrate 101 and a plurality of pixels 102 .
- a plurality of pixels 102 are two-dimensionally arranged on the first surface of the driving substrate 101 in a prescribed arrangement pattern such as a matrix.
- the display device 100 is, for example, an LED (Light Emitting Diode) display.
- the display device 100 is an example of a light emitting device.
- first surface the surface on the display surface side of the display device 10
- second surface the surface opposite to the display surface
- first direction horizontal direction
- second direction vertical direction orthogonal to the first surface of the drive substrate 101
- the drive board 101 is a so-called backplane.
- a drive substrate 101 drives a plurality of pixels 102 .
- a first surface of the driving substrate 101 is provided with a plurality of pads 51, a plurality of pads 52 and a plurality of pads 53, as shown in FIG. 2B. Although illustration is omitted, the first surface of the drive substrate 101 is also provided with a plurality of drive circuits, a driver for image display, and the like.
- the substrate body of the driving substrate 101 may be composed of, for example, a semiconductor that facilitates the formation of transistors or the like, or may be composed of glass or resin with low permeability to moisture and oxygen.
- the substrate body may be a semiconductor substrate, a glass substrate, a resin substrate, or the like.
- Semiconductor substrates include, for example, amorphous silicon, polycrystalline silicon, monocrystalline silicon, or the like.
- Glass substrates include, for example, high strain point glass, soda glass, borosilicate glass, forsterite, lead glass, or quartz glass.
- the resin substrate contains, for example, at least one selected from the group consisting of polymethyl methacrylate, polyvinyl alcohol, polyvinyl phenol, polyethersulfone, polyimide, polycarbonate, polyethylene terephthalate and polyethylene naphthalate.
- FIG. 2A is a plan view showing an example of the configuration of the pixel 102.
- FIG. FIG. 2B is a perspective view of pixel 102 viewed from the direction of arrow 102A in FIG. 2A.
- the pixel 102 has a rectangular shape in plan view.
- a rectangular shape also includes a square shape.
- a planar view means viewing an object from the Z-axis direction (the direction perpendicular to the first surface of the driving substrate 101).
- the shape of the pixel 102 may be a quadrangle other than a square (for example, a rhombus or a parallelogram).
- the display device 100 sequentially includes a driving substrate 101, a first layer L1, and a second layer L2.
- FIG. 3 is a plan view showing an example of the configuration of the first layer L1.
- FIG. 4 is a plan view showing an example of the configuration of the second layer L2.
- the first layer L1 includes a plurality of first compound semiconductor light emitting devices (hereinafter simply referred to as "first light emitting devices") 10R and a plurality of wirings 13. , and insulating material 14 .
- first light emitting devices hereinafter simply referred to as "first light emitting devices”
- the second layer L2 includes a plurality of second compound semiconductor light-emitting elements (hereinafter simply referred to as "second light-emitting elements") 20G and a plurality of third light-emitting elements. It includes a compound semiconductor light emitting device (hereinafter simply referred to as a “third light emitting device”) 30B, a plurality of wirings 23, a plurality of wirings 33, and an insulating material 24.
- the display device 100 further includes a plurality of connection members 52A and a plurality of connection members 53A provided from the first layer L1 to the second layer L2.
- the first light-emitting element 10R, the second light-emitting element 20G and the third light-emitting element 30B are displaced in the in-plane direction. This can prevent the red light emitted from the first light emitting element 10R from being blocked by the second light emitting element 20G and the third light emitting element 30B.
- the second light emitting element 20G and the third light emitting element 30B are separated in plan view.
- the first light emitting element 10R is provided between the second light emitting element 20G and the third light emitting element 30B in plan view.
- the in-plane direction means a direction parallel to the first surface of the drive substrate 101 .
- One pixel 102 is composed of one first light emitting element 10R, one second light emitting element 20G, and one third light emitting element 30B.
- the first light emitting element 10R constitutes a first sub-pixel.
- the first light emitting element 10R can emit red light. Red light is an example of first light having a first peak wavelength.
- the first light emitting element 10R has a hexagonal shape in plan view. The hexagonal shape has a pair of opposing substantially right-angled corners.
- the first light-emitting element 10R is arranged in the pixel 102 so that the diagonal line connecting the pair of corners overlaps with the first diagonal line of the rectangular pixel 102 .
- the plurality of first light emitting elements 10R are provided in the insulating material 14. As shown in FIG.
- the plurality of first light emitting elements 10R are two-dimensionally arranged in the in-plane direction in a prescribed arrangement pattern such as a matrix.
- the first light-emitting element 10R has a non-light-emitting/low-light-emitting region (first region) 10A -1 and a light-emitting region (second region) 10A- 2 on the first surface.
- the non-light-emitting/low-light-emitting region 10A- 1 is provided in the peripheral portion of the first light-emitting element 10R and cannot emit red light or only emits red light with a lower emission intensity than the light-emitting region 10A- 2 . This is an area where it is not possible.
- the non-light-emitting/low-light-emitting region 10A1 is a region having a prescribed width inwardly from the periphery of the first surface of the first light emitting element 10R.
- the non-luminous/low-luminous region 10A1 has a closed loop shape.
- the light emitting region 10A2 is a region provided inside the non-light emitting/low light emitting region 10A1 and capable of emitting red light.
- the light emitting region 10A2 has, for example, a shape similar to that of the first light emitting element 10R in plan view.
- FIG. 5A is a cross-sectional view showing an example of the configuration of the first light emitting element 10R.
- the first light emitting element 10R is, for example, a red LED element.
- the first light emitting element 10R includes a compound semiconductor laminate 11R and an electrode 12. As shown in FIG.
- the compound semiconductor laminate 11R has a first surface and a second surface.
- the compound semiconductor laminate 11R includes, on the first surface of the electrode 12, a first compound semiconductor layer 111, a light emitting layer (first light emitting layer) 112, and a second compound semiconductor layer 113 in this order.
- the compound semiconductor laminate 11R and the electrodes 12 are separated between adjacent first light emitting elements 10R, as shown in FIG. This can suppress leakage of electrons and holes between adjacent first light emitting elements 10R.
- the light-emitting layer 112 can emit red light.
- the first compound semiconductor layer 111, the light emitting layer 112 and the second compound semiconductor layer 113 contain, for example, an AlGaInP-based compound semiconductor or an AlGaInAs-based compound semiconductor.
- a non-light-emitting/low light-emitting region 10A- 1 and a light-emitting region 10A- 2 are generated on the first surface of the first light emitting element 10R.
- the compound semiconductor in which such a region occurs on the first surface of the first light emitting element 10R is not limited to the above materials.
- the first compound semiconductor layer 111 has a first conductivity type
- the second compound semiconductor layer 113 has a second conductivity type opposite to the first conductivity type.
- the first conductivity type may be n-type and the second conductivity type may be p-type, or the first conductivity type may be p-type and the second conductivity type may be n-type. . That is, the first light emitting elements 10R may be connected by anode common or may be connected by cathode common.
- the light-emitting layer 112 contains an AlGaInP-based material or an AlGaInAs-based material, the phenomenon of non-emission of red light or low emission of red light in the non-emissive/low-emission region 10A1 appears remarkably. Therefore, when the light-emitting layer 112 contains an AlGaInP-based material or an AlGaInAs-based material, the area SR of the first light emitting element 10R is the area SB of the second light emitting element 20G and the area S of the third light emitting element 30B. It is particularly effective to set it larger than B.
- the electrode 12 is provided on the second surface of the compound semiconductor laminate 11R.
- the electrodes 12 are connected to the pads 51 of the driving substrate 101 via bumps 51A as connecting members.
- the compound semiconductor laminate 11R may be directly bonded to the first surface of the driving substrate 101 by wafer bonding or the like. In this case, electrodes 12, bumps 51A and pads 51 may not be provided.
- the electrodes 12 are, for example, gold (Au), silver (Ag), palladium (Pd), platinum (Pt), nickel (Ni), Al (aluminum), Ti (titanium), tungsten (W), vanadium (V). , chromium (Cr), copper (Cu), Zn (zinc), tin (Sn) and indium (In).
- the electrode 12 may contain the at least one metal as a constituent element of an alloy.
- the electrode 12 has, for example, a single layer configuration or a multilayer configuration.
- Multilayer structures include Ti/Au, Ti/Al, Ti/Pt/Au, Ti/Al/Au, Ni/Au, AuGe/Ni/Au, Ni/Au/Pt, Ni/Pt, Pd/Pt or Ag /Pd and the like can be exemplified.
- the layer before the "/" in the multilayer structure is positioned closer to the active layer.
- the second light emitting element 20G constitutes a second sub-pixel.
- the second light emitting element 20G can emit green light.
- Green light is an example of second light having a second peak wavelength different from the first peak wavelength.
- the second light emitting element 20G has a quadrangular shape such as a square shape in plan view.
- the plurality of second light emitting elements 20G are provided within the insulating material 24.
- the plurality of second light emitting elements 20G are two-dimensionally arranged in the in-plane direction in a prescribed arrangement pattern such as a matrix.
- the second light emitting element 20G is arranged to be displaced from the first light emitting element 10R in the in-plane direction.
- the second light emitting element 20G is arranged on the second diagonal line of the rectangular pixel 102 .
- the second light emitting element 20G partially overlaps the first light emitting element 10R in plan view. Accordingly, the pixels 102 can be miniaturized, so that the display device 100 can have high definition. Moreover, the influence of the second light emitting element 20G on the light extraction of the first light emitting element 10R can be suppressed. From the viewpoint of suppressing the influence of the second light emitting element 20G on the light extraction of the first light emitting element 10R, the second light emitting element 20G is positioned outside the light emitting region 10A2 of the first light emitting element 10R in plan view. preferably located.
- the second light-emitting element 20G is located outside the light-emitting region 10A- 2 of the first light-emitting element 10R in plan view, and overlaps a part of the non-light-emitting/low light-emitting region 10A- 1 of the first light-emitting element 10R. preferably. Specifically, the first portion of the second light emitting element 20G overlaps the non-light emitting/low light emitting region 10A1 of the first light emitting element 10R in plan view, and the second portion of the second light emitting element 20G preferably overlaps the region outside the first light emitting element 10R in plan view. This makes it possible to reduce the influence of the second light emitting element 20G on the light extraction of the first light emitting element 10R while miniaturizing the pixel 102 .
- the second light emitting element 20G has a light emitting region over substantially the entire first surface (including the entire first surface).
- a non-luminous/low-luminous region narrower than the non-luminous/low-luminous region 10A1 of the first light-emitting device 10R may be provided on the first surface of the second light-emitting device 20G.
- the second light emitting element 20G is mounted on the first layer L1 by, for example, a mass transfer process.
- FIG. 5B is a cross-sectional view showing an example of the configuration of the second light emitting element 20G.
- the second light emitting element 20G is, for example, a green LED element.
- the second light emitting element 20G includes a compound semiconductor laminate 21G and an electrode 22. As shown in FIG.
- the compound semiconductor laminate 21G has a first surface and a second surface.
- the compound semiconductor laminate 21G includes, on the first surface of the electrode 22, a first compound semiconductor layer 121, a light emitting layer (second light emitting layer) 122, and a second compound semiconductor layer 123 in this order.
- the light emitting layer 122 can emit green light.
- the first compound semiconductor layer 121, the light emitting layer 122, and the second compound semiconductor layer 123 contain, for example, an AlGaInN-based compound semiconductor.
- substantially the entire first surface of the second light-emitting element 20G becomes a light-emitting region.
- the compound semiconductor in which substantially the entire first surface of the second light emitting element 20G becomes the light emitting region is not limited to the above materials.
- the first compound semiconductor layer 121 has a first conductivity type
- the second compound semiconductor layer 123 has a second conductivity type opposite to the first conductivity type.
- the first conductivity type may be n-type and the second conductivity type may be p-type, or the first conductivity type may be p-type and the second conductivity type may be n-type.
- the second light emitting element 20G may be connected by anode common or may be connected by cathode common.
- the electrode 22 is provided on the second surface of the compound semiconductor laminate 21G.
- the electrodes 22 are connected to the pads 52 of the driving substrate 101 by connecting members 52A.
- the connection member 52A is preferably located outside the first light emitting element 10R in plan view. Accordingly, it is possible to suppress the decrease in the light emitting region 10A2 of the first light emitting element 10R.
- the connection member 52A is, for example, a via.
- Electrode 22 may have a single layer construction or a multilayer construction. Electrode 22 may comprise similar materials as electrode 12 .
- the third light emitting element 30B constitutes a third sub-pixel.
- the third light emitting element 30B can emit blue light. Blue light is an example of third light having a third peak wavelength different from the first peak wavelength and the second peak wavelength.
- the third light emitting element 30B has a square shape such as a square shape in plan view.
- a plurality of third light emitting elements 30B are provided in the insulating material 24 .
- the plurality of third light emitting elements 30B are two-dimensionally arranged in the in-plane direction in a prescribed arrangement pattern such as a matrix.
- the third light emitting element 30B is arranged to be displaced from the first light emitting element 10R in the in-plane direction.
- the third light emitting element 30B is arranged on the second diagonal line of the rectangular pixel 102 .
- the direction of displacement of the third light emitting element 30B with respect to the first light emitting element 10R is opposite to the direction of displacement of the second light emitting element 20G with respect to the first light emitting element 10R.
- the third light emitting element 30B partially overlaps the first light emitting element 10R in plan view. Accordingly, the pixels 102 can be miniaturized, so that the display device 100 can have high definition. Moreover, the influence of the third light emitting element 30B on the light extraction of the first light emitting element 10R can be suppressed. From the viewpoint of suppressing the influence of the third light emitting element 30B on the light extraction of the first light emitting element 10R, the third light emitting element 30B is positioned outside the light emitting region 10A2 of the first light emitting element 10R in plan view. preferably located.
- the third light-emitting element 30B is located outside the light-emitting region 10A- 2 of the first light-emitting element 10R in plan view, and overlaps a part of the non-light-emitting/low light-emitting region 10A- 1 of the first light-emitting element 10R. preferably. Specifically, the first portion of the third light emitting element 30B overlaps the non-light emitting/low light emitting region 10A1 of the first light emitting element 10R in plan view, and the second portion of the third light emitting element 30B preferably overlaps the region outside the first light emitting element 10R in plan view. This makes it possible to suppress the influence of the third light emitting element 30B on the light extraction of the first light emitting element 10R while miniaturizing the pixel 102.
- the third light emitting element 30B has a light emitting region over substantially the entire first surface (including the entire first surface).
- a non-luminous/low-luminous region narrower than the non-luminous/low-luminous region 10A1 of the first light-emitting device 10R may be provided on the first surface of the third light-emitting device 30B.
- the third light emitting element 30B is mounted on the first layer L1 by, for example, a mass transfer process.
- FIG. 5C is a cross-sectional view showing an example of the configuration of the third light emitting element 30B.
- the third light emitting element 30B is, for example, a blue LED element.
- the third light emitting element 30B includes a compound semiconductor laminate 31B and an electrode 32. As shown in FIG.
- the compound semiconductor laminate 31B has a first surface and a second surface.
- the compound semiconductor laminate 31B includes, on the second surface of the electrode 32, a first compound semiconductor layer 131, a light emitting layer (third light emitting layer) 132, and a second compound semiconductor layer 133 in this order.
- the light-emitting layer 132 can emit blue light.
- the first compound semiconductor layer 131, the light emitting layer 132, and the second compound semiconductor layer 133 contain, for example, an AlGaInN-based compound semiconductor.
- substantially the entire first surface of the third light-emitting element 30B serves as a light-emitting region.
- the compound semiconductor in which substantially the entire first surface of the third light emitting element 30B becomes the light emitting region is not limited to the above materials.
- the first compound semiconductor layer 131 has a first conductivity type
- the second compound semiconductor layer 133 has a second conductivity type opposite to the first conductivity type.
- the first conductivity type may be n-type and the second conductivity type may be p-type, or the first conductivity type may be p-type and the second conductivity type may be n-type. . That is, the third light emitting element 30B may be connected by anode common or may be connected by cathode common.
- the electrode 32 is provided on the second surface of the compound semiconductor laminate 31B.
- the electrodes 32 are connected to the pads 53 of the driving substrate 101 by connecting members 53A.
- the connection member 53A is preferably located outside the first light emitting element 10R in plan view. Accordingly, it is possible to suppress the decrease in the light emitting region 10A2 of the first light emitting element 10R.
- the connection member 53A is, for example, a via.
- Electrode 32 has a single layer construction or a multilayer construction. Electrode 32 may comprise similar materials as electrode 12 .
- first light emitting element 10R Sizes of first light emitting element 10R, second light emitting element 20G and third light emitting element 30B
- first light emitting element 10R capable of emitting red light
- the non-light emitting/low light emitting region 10A1 as described above is generated.
- the first light emitting element eg, green LED element 20G capable of emitting green light and the third light emitting element (eg, blue LED element) 30B capable of emitting blue light
- the first light emitting element The non-light-emitting/low-light-emitting region seen in 10R does not occur, or even if the non-light-emitting/low-light-emitting region occurs, the area of the non-light-emitting/low-light-emitting region is the same as that of the first light-emitting element 10R. It is extremely small compared to the light emitting/low light emitting region 10A1 .
- the ratio of the area of the non-light-emitting/low-light-emitting region 10A -1 to the area of the light-emitting region 10A- 2 increases, and there is a possibility that the luminous efficiency of the first light-emitting element 10R decreases. be.
- the second light emitting element 20G and the third light emitting element 30B are miniaturized, there is little possibility that the luminous efficiency will decrease as in the case of the first light emitting element 10R.
- the area S R of the first light emitting element 10R is made larger than the area S B of the second light emitting element 20G in order to suppress a decrease in the luminous efficiency of the first light emitting element 10R. It is large, and the area S R of the first light emitting element 10R is larger than the area S B of the third light emitting element 30B.
- the area S R of the first light emitting element 10R, the area S B of the second light emitting element 20G, and the area S B of the third light emitting element 30B are all the areas in plan view (that is, the first surface area).
- the area of the first light emitting element 10R is preferably larger than 1/3 of the area of one pixel 102. FIG. As a result, even if the first light emitting element 10R has the non-light emitting/low light emitting region 10A1 , it is possible to suppress a decrease in luminance of the first light emitting element 10R.
- the sum S RGB of the area S R of the first light emitting element 10R, the area S G of the second light emitting element 20G, and the area S B of the third light emitting element 30B, and An example of the area SPIX will be described.
- the area S R of the first light emitting element 10R, the area S G of the second light emitting element 20G, the area S B of the third light emitting element 30B, the areas S R , S G , and S B , and the area S PIX of one pixel 102 are as follows.
- Area S G of second light emitting element 20G: 2.3 ⁇ m ⁇ 2.3 ⁇ m 5.3 ⁇ m 2
- Total sum of area S R , area S G and area S B ( S R +S G +S B ): 26.6 ⁇ m 2
- the area S PIX of 102 is larger than 1, the pixel is larger than the pixel in which the first light emitting element 10R, the second light emitting element 20G, and the third light emitting element 30B are densely arranged in the same plane.
- the size of 102 can be miniaturized.
- the carrier diffusion length of the light emitting layer 112 of the first light emitting element 10R is longer than the carrier diffusion length of the light emitting layer 122 of the second light emitting element 20G.
- the light-emitting layer 112 and the light-emitting layer 122 have such a carrier diffusion length relationship, the light-emitting layer 112 and the light-emitting layer 122 have emission characteristics shown in (1) or (2) below.
- the first light emitting element 10R has the non-light emitting/low light emitting region 10A1 on the first surface of the first light emitting element 10R, whereas the second light emitting element 20G has the second light emitting
- the first surface of element 20G is substantially free of non-emissive/low-emissive regions 10A1 .
- Both the first light emitting element 10R and the second light emitting element 20G have the non-light emitting/low light emitting region 10A1 on the first surface, but the second light emitting element 20G has a non-light emitting/low light emitting region 10A1.
- the width of the low light emitting region 10A1 is narrower than the width of the non-light emitting/low light emitting region 10A1 of the first light emitting element 10R.
- the carrier diffusion length of the light emitting layer 112 of the first light emitting element 10R is longer than the carrier diffusion length of the light emitting layer 132 of the third light emitting element 30B.
- the light-emitting layer 112 and the light-emitting layer 132 have such a carrier diffusion length relationship, the light-emitting layer 112 and the light-emitting layer 122 have emission characteristics shown in (3) or (4) below.
- (3) The first light emitting element 10R has the non-light emitting/low light emitting region 10A1 on the first surface of the first light emitting element 10R, whereas the third light emitting element 30B has the third light emitting
- the first surface of element 30B is substantially free of non-emissive/low-emissive regions 10A1 .
- Both the first light emitting element 10R and the third light emitting element 30B have the non-light emitting/low light emitting region 10A1 on the first surface, but the third light emitting element 30B has the non-light emitting/low light emitting region 10A1.
- the width of the low light emitting region 10A1 is narrower than the width of the non-light emitting/low light emitting region 10A1 of the first light emitting element 10R.
- the wiring 13 electrically connects the plurality of first light emitting elements 10R arranged in one row in the X-axis direction.
- the wiring 13 is provided on the insulating material 14 .
- Each of the plurality of wirings 13 extends in the X-axis direction.
- Wirings 13 adjacent to each other in the Y-axis direction are separated from each other for a specified period of time.
- the wiring 13 is connected to the first surface of the compound semiconductor laminate 11R of each of the plurality of first light emitting elements 10R arranged in one row in the X-axis direction.
- the wiring 13 includes a transparent wiring 13A and a plurality of metal wirings 13B.
- a plurality of metal wirings 13B are provided at regular intervals on the first surface of the transparent wiring 13A.
- the metal wiring 13B is an auxiliary member for making the resistance of the wiring 13 low.
- the transparent wiring 13A has transparency to visible light.
- 13 A of transparent wirings contain a transparent conductive material, for example.
- the transparent conductive material preferably contains a transparent conductive oxide.
- Transparent conductive oxides are, for example, indium oxide, indium-tin oxide (ITO, including Indium Tin Oxide, Sn-doped In 2 O 3 , crystalline ITO and amorphous ITO), indium-zinc oxide (IZO: Indium Zinc Oxide), Indium-Gallium Oxide (IGO), Indium-doped Gallium-Zinc Oxide (IGZO, In—GaZnO ), IFO (F-doped In 2 O 3 ), Tin Oxide (SnO 2 ), ATO (Sb-doped SnO 2 ), FTO (F-doped SnO 2 ), zinc oxide (ZnO, including Al-doped ZnO, B-doped ZnO, Ga-doped ZnO), antimony oxide,
- the metal wiring 13B is made of, for example, chromium (Cr), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), molybdenum (Mo), titanium (Ti), tantalum (Ta), aluminum (Al ), magnesium (Mg), iron (Fe), tungsten (W) and silver (Ag).
- the metal wiring 13B may contain at least one metal element as a constituent element of an alloy.
- the wiring 23 electrically connects the plurality of second light emitting elements 20G arranged in one row in the Y-axis direction.
- the wiring 33 electrically connects the plurality of third light emitting elements 30B arranged in a row in the Y-axis direction.
- the wiring 23 and the wiring 33 are provided on the insulating material 24 .
- Each of the plurality of wirings 23 extends in the Y-axis direction.
- a plurality of wirings 33 are also extended in the Y-axis direction.
- the wirings 23 and the wirings 33 are alternately provided in the X-axis direction.
- the wiring 23 and the wiring 33 adjacent in the X-axis direction are separated by a specified interval.
- the wiring 23 is connected to the first surface of the compound semiconductor laminate 21G of each of the plurality of second light emitting elements 20G arranged in one row in the Y-axis direction.
- the wiring 33 is connected to the first surface of the compound semiconductor laminate 31B of each of the plurality of third light emitting elements 30B arranged in a row in the Y-axis direction.
- the wiring 23 includes a transparent wiring 23A and a plurality of metal wirings 23B.
- a plurality of metal wires 23B are provided on the first surface of the transparent wire 23A at regular intervals in the longitudinal direction of the wire 23, respectively.
- the metal wiring 23B is an auxiliary member for making the resistance of the wiring 23 low.
- the wiring 33 includes a transparent wiring 33A and a plurality of metal wirings 33B.
- a plurality of metal wires 33B are provided on the first surface of the transparent wire 33A at regular intervals in the longitudinal direction of the wire 23, respectively.
- the metal wiring 33B is an auxiliary member for making the resistance of the wiring 33 low.
- the transparent wiring 23A and the transparent wiring 33A may contain the same material as the transparent wiring 13A.
- Metal wiring 23B and metal wiring 33B may include the same material as metal wiring 13B.
- the wiring 23 is preferably located outside each light emitting region 10A2 of the plurality of first light emitting elements 10R aligned in one row in the Y-axis direction in plan view. Thereby, the influence of the wiring 23 on the light extraction of the first light emitting element 10R can be suppressed.
- the wiring 33 is preferably located outside each light emitting region 10A2 of the plurality of first light emitting elements 10R aligned in one row in the Y-axis direction in plan view. Thereby, the influence of the wiring 33 on the light extraction of the first light emitting element 10R can be suppressed.
- the wiring 23 is positioned outside each of the light emitting regions 10A2 of the plurality of first light emitting elements 10R aligned in one row in the Y-axis direction in plan view, and is aligned in one row in the Y-axis direction. It preferably overlaps with a part of each non-light emitting/low light emitting region 10A1 of the first light emitting element 10R. In this case, the influence of the wiring 23 on the light extraction of the first light emitting element 10R can be suppressed, and the distance between the wiring 23 and the wiring 33 adjacent in the X-axis direction can be narrowed.
- the wiring 33 is positioned outside each of the light emitting regions 10A2 of the plurality of first light emitting elements 10R aligned in one row in the Y-axis direction in plan view, and is aligned in one row in the Y-axis direction. It preferably overlaps with a part of each non-light emitting/low light emitting region 10A1 of the first light emitting element 10R. In this case, the influence of the wiring 33 on the light extraction of the first light emitting element 10R can be suppressed, and the distance between the wirings 23 adjacent to each other in the X-axis direction can be narrowed.
- the insulating material 14 and the insulating material 24 may be an organic insulating material, an inorganic insulating material, or a laminate thereof.
- the organic insulating material includes, for example, at least one selected from the group consisting of polyimide-based resins, acrylic-based resins, novolak-based resins, and the like.
- the inorganic insulating material includes, for example, at least one selected from the group consisting of silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), and the like.
- a conventional display device includes light emitting elements (compound semiconductor light emitting elements) of three colors (red, green, and blue) in a single layer on the first surface of the driving substrate. For this reason, when the pixel size is miniaturized, the size of the light emitting element for each color is accordingly reduced.
- the red light-emitting element for example, the red LED element
- the red LED element has a non-light-emitting/low-light-emitting region at the periphery. The ratio of the area of the non-light-emitting/low-light-emitting region to the light is increased. Therefore, the luminous efficiency of the red compound semiconductor light-emitting device is lowered.
- the display device 100 sequentially includes a first layer L1 and a second layer L2 on the first surface of the driving substrate 101.
- the second layer L2 includes two-color compound semiconductor light emitting elements of the second light emitting element 20G and the third light emitting element 30B, while the first layer L1 includes one of the first light emitting elements 10R. It includes a compound semiconductor light-emitting element of color.
- the size of the first light emitting element 10R can be set independently of the size of the second light emitting element 20G and the third light emitting element 30B. Therefore, even when the size of the pixel 102 is miniaturized, it is possible to prevent the size of the first light emitting element 10R from being reduced.
- the first light-emitting element 10R, the second light-emitting element 20G, and the third light-emitting element 30B are displaced in the in-plane direction.
- a conventional display device see Patent Document 1 in which light emitting elements (compound semiconductor light emitting elements) of three colors (red, green, and blue) are stacked.
- the first layer L1 includes a single-color light-emitting element (first light-emitting element 10R), and the second layer L2 includes a two-color light-emitting element (second light-emitting element 10R).
- first light-emitting element 10R first light-emitting element
- second light-emitting element 10R two-color light-emitting element
- light emitting element 20G and a third light emitting element 30B light emitting element 20G and a third light emitting element 30B.
- a single layer contains three color light emitting elements. Therefore, in the display device 100 according to the first embodiment, the distance between the second light emitting element 20G and the third light emitting element 30B is set to can be widened.
- the mounting accuracy of the second light emitting element 20G and the third light emitting element 30B in the display device 100 according to the first embodiment is relaxed compared to the mounting accuracy of the three color light emitting elements in the conventional display device. be able to.
- the mounting accuracy of the first light emitting element 10R can be relaxed compared to the mounting accuracy of the three color light emitting elements in the conventional display device.
- the second light-emitting element 20G is positioned outside the light-emitting region 10A2 of the first light-emitting element 10R in plan view, and is outside the first light-emitting element 10R. It overlaps with part of the light emitting/low light emitting region 10A1 .
- the third light emitting element 30B is positioned outside the light emitting region 10A2 of the first light emitting element 10R in plan view, and is part of the non-light emitting/low light emitting region 10A1 of the first light emitting element 10R. overlaps with This makes it possible to reduce the influence of the second light emitting element 20G and the third light emitting element 30B on the light extraction of the first light emitting element 10R while miniaturizing the pixel 102 .
- the wiring 23 is provided in a region outside the light emitting region 10A2 of the first light emitting element 10R in plan view. Also, the wiring 33 is provided in a region outside the light emitting region 10A2 of the first light emitting element 10R in plan view. Thereby, the influence of the wiring 23 and the wiring 33 on the light extraction of the first light emitting element 10R can be suppressed.
- FIG. 8 is a plan view showing an example of the configuration of the display device 200 according to the second embodiment.
- FIG. 9A is a plan view showing an example of the configuration of the pixel 202.
- FIG. 9B is a perspective view of the pixel 202 viewed from the direction of arrow 202A in FIG. 9A.
- the display device 200 differs from the display device 100 according to the first embodiment in that it further includes a third layer L3 and includes a drive substrate 201 instead of the drive substrate 101 .
- a driving substrate 201 drives a plurality of pixels 202 .
- a plurality of pads 51 , a plurality of pads 52 , a plurality of pads 53 and a plurality of pads 54 are provided on the first surface of the drive substrate 201 .
- the third layer L3 is provided between the driving substrate 201 and the first layer L1.
- the third layer L3 includes a plurality of fourth compound semiconductor light emitting elements (hereinafter simply referred to as “fourth light emitting elements”) 40R, a plurality of wirings 43, and an insulating material 44.
- FIG. One pixel 402 is composed of one first light emitting element 10R, one second light emitting element 20G, one third light emitting element 30B, and 1/4 fourth light emitting element 40R. ing.
- the fourth light emitting element 40R constitutes a fourth sub-pixel.
- the fourth light emitting element 40R can emit light of the same color as the first light emitting element 10R, that is, red light. Red light is an example of fourth light having a fourth peak wavelength.
- the fourth light emitting element 40R has a hexagonal shape in plan view.
- the fourth light emitting element 40R is arranged such that the center of the fourth light emitting element 40R is positioned at the corner of the rectangular pixel 402 in plan view.
- a plurality of fourth light emitting elements 40 ⁇ /b>R are provided in the insulating material 44 .
- the plurality of fourth light emitting elements 40R are two-dimensionally arranged in the in-plane direction in a prescribed arrangement pattern such as a matrix.
- the first light emitting element 10R and the fourth light emitting element 40R are separated in plan view.
- the fourth light emitting element 40R is provided between the second light emitting element 20G and the third light emitting element 30B in plan view.
- the fourth light-emitting element 40R has a non-light-emitting/low-light-emitting region (third region) 40A- 1 and a light-emitting region (fourth region) 40A -2 on the first surface.
- the non-luminous/low-luminous region 40A 1 and the luminous region 40A 2 are the same as the non-luminous/low-luminous region 10A 1 and the luminous region 10A 2 of the first light-emitting element 10R.
- FIG. 10 is a cross-sectional view showing an example of the configuration of the fourth light emitting element 40R.
- the fourth light emitting element 40R is, for example, a red LED element.
- the fourth light emitting element 40R includes a compound semiconductor laminate 41R and an electrode 42. As shown in FIG.
- the compound semiconductor laminate 41R has a first surface and a second surface.
- the compound semiconductor laminate 41R includes a first compound semiconductor layer 141, a light emitting layer (fourth light emitting layer) 142, and a second compound semiconductor layer 143 on the first surface of the electrode 42 in this order.
- the first compound semiconductor layer 141, the light emitting layer 142, and the second compound semiconductor layer 143 are the same as the first compound semiconductor layer 111, the light emitting layer 112, and the second compound semiconductor layer 113 of the first light emitting element 10R, respectively. may be
- the compound semiconductor laminate 41R and the electrode 42 are separated between adjacent fourth light emitting elements 40R. This can suppress leakage of electrons and holes between the fourth light emitting elements 40R.
- the electrode 42 is provided on the second surface of the compound semiconductor laminate 41R.
- the electrodes 42 are connected to the pads 54 of the driving substrate 201 via bumps 54A as connecting members.
- the compound semiconductor laminate 41R may be directly bonded to the first surface of the driving substrate 201 by wafer bonding or the like. In this case, electrodes 42, bumps 54A and pads 54 may not be provided.
- Electrode 42 has a single layer construction or a multilayer construction. Electrode 42 may comprise similar materials as electrode 12 .
- a third layer L3 is provided between the driving substrate 201 and the first layer L1. Therefore, the electrodes 12 of the first light emitting element 10R are connected to the pads 51 of the driving substrate 201 via connection members 51B such as vias instead of the bumps 51A.
- the second light emitting element 20G partially overlaps the fourth light emitting element 40R in plan view.
- the pixels 202 can be miniaturized, so that the display device 200 can have high definition.
- the influence of the second light emitting element 20G on light extraction of the fourth light emitting element 40R can be suppressed.
- the second light emitting element 20G is positioned outside the light emitting region 40A2 of the fourth light emitting element 40R in plan view. preferably located.
- the second light-emitting element 20G is located outside the light-emitting region 40A -2 of the fourth light-emitting element 40R in plan view, and overlaps a part of the non-light-emitting/low light-emitting region 40A- 1 of the fourth light-emitting element 40R. preferably. Specifically, the first portion of the second light emitting element 20G overlaps the non-light emitting/low light emitting region 40A1 of the fourth light emitting element 40R in plan view, and the second portion of the second light emitting element 20G preferably overlaps the area outside the fourth light emitting element 40R in plan view. This makes it possible to reduce the influence of the second light emitting element 20G on the light extraction of the fourth light emitting element 40R while miniaturizing the pixel 202 .
- the third light emitting element 30B partially overlaps the fourth light emitting element 40R in plan view.
- the pixels 202 can be miniaturized, so that the display device 200 can have high definition.
- the third light emitting element 30B is positioned outside the light emitting region 40A2 of the fourth light emitting element 40R in plan view. preferably located.
- the third light-emitting element 30B is located outside the light-emitting region 40A -2 of the fourth light-emitting element 40R in plan view, and overlaps a part of the non-light-emitting/low light-emitting region 40A- 1 of the fourth light-emitting element 40R. preferably. Specifically, the first portion of the third light emitting element 30B overlaps the non-light emitting/low light emitting region 40A1 of the fourth light emitting element 40R in plan view, and the second portion of the third light emitting element 30B preferably overlaps the area outside the fourth light emitting element 40R in plan view. This makes it possible to reduce the influence of the third light emitting element 30B on the light extraction of the fourth light emitting element 40R while miniaturizing the pixel 202 .
- the wiring 43 electrically connects the plurality of fourth light emitting elements 40R arranged in one row in the X-axis direction.
- the wiring 43 is provided on the insulating material 44 .
- Each of the plurality of wirings 43 extends in the X-axis direction.
- Wirings 43 adjacent to each other in the Y-axis direction are separated from each other for a specified period of time.
- the wiring 43 is connected to the first surface of the compound semiconductor laminate 41R of each of the plurality of fourth light emitting elements 40R arranged in a line in the X-axis direction.
- the wiring 43 may have a configuration similar to that of the wiring 13 .
- Insulating material 44 may include materials similar to insulating material 14 and insulating material 24 .
- the display device 200 according to the second embodiment further includes a plurality of fourth light emitting elements 40R capable of emitting red light between the driving substrate 11 and the first layer L1. Therefore, the number of red light emitting elements per pixel 202 can be increased compared to the display device 100 according to the first embodiment. Therefore, even when the ratio of the area of the non-light- emitting /low light-emitting region 10A1 to the light-emitting region 10A2 of the first light-emitting device 10R increases due to the miniaturization of the first light-emitting device 10R, the brightness of the red light is reduced. Decrease can be suppressed.
- the third light is not limited to light of these colors.
- At least one kind of light selected from the group consisting of the first light, the second light and the third light may be light of a color other than red light, green light and blue light.
- At least one kind of light selected from the group consisting of the first light, the second light and the third light may be light other than visible light.
- the first light may be infrared light.
- At least one kind of light selected from the group consisting of the second light and the third light may be ultraviolet light.
- the compound semiconductor laminate 11R of the first light emitting element 10R capable of emitting infrared light is composed of the same material system as the compound semiconductor laminate 11R of the first light emitting element 10R capable of emitting red light. It is possible. Therefore, the first light-emitting element 10R capable of emitting infrared light has a non-light-emitting/low-light-emitting region (first region) 10R- 1 and a light-emitting region (second region) 10R -2 . there is Therefore, even when the display device 100 includes the first light emitting element 10R capable of emitting infrared light, the same effects as those of the first embodiment can be obtained.
- the compound semiconductor laminate 21G of the second light emitting element 20G capable of emitting ultraviolet light can be composed of the same material system as the compound semiconductor laminate 21G of the second light emitting element 20G capable of emitting green light.
- the compound semiconductor laminate 31B of the third light emitting element 30B capable of emitting ultraviolet light is composed of the same material system as the compound semiconductor laminate 31B of the third light emitting element 30B capable of emitting blue light. It is possible. Therefore, in the second light emitting element 20G capable of emitting ultraviolet light and the third light emitting element 30B capable of emitting ultraviolet light, a non-light emitting/low light emitting region does not occur or even if it does occur. The area is extremely small. Therefore, when the display device 100 includes at least one selected from the group consisting of the second light emitting element 20G capable of emitting ultraviolet light and the third light emitting element 30B capable of emitting ultraviolet light, can also obtain the same effect as the first embodiment.
- the example in which the first light, the second light, the third light, and the fourth light are red light, green light, blue light, and red light, respectively, has been described.
- the second light, the third light, and the fourth light are not limited to these colors of light. Even if at least one kind of light selected from the group consisting of the first light, the second light, the third light and the fourth light is light of a color other than red light, green light and blue light good. At least one kind of light selected from the group consisting of the first light, the second light, the third light and the fourth light may be light other than visible light.
- At least one kind of light selected from the group consisting of the first light emitting element 10R and the fourth light emitting element 40R may be infrared light.
- At least one kind of light selected from the group consisting of the second light emitting element 20G and the third light emitting element 30B may be ultraviolet light.
- the second layer L2 includes two types of light emitting elements 20G capable of emitting green light and third light emitting elements 30B capable of emitting blue light.
- the configuration of the second layer L2 is not limited to this.
- the second layer L2 includes any one of the second light emitting element 20G capable of emitting green light and the third light emitting element 30B capable of emitting blue light. You can also try to
- the third light emitting element 30B is replaced with the third light emitting element 30B. may be provided with the second light emitting element 20G.
- the position of the second light emitting element 20G is replaced with the second light emitting element 20G. may be provided with the third light emitting element 30B.
- the compound semiconductor laminate 11R and the electrodes 12 are divided between the adjacent first light emitting elements 10R as shown in FIG. is not limited to this.
- the second compound semiconductor layer 113 is connected between the adjacent first light emitting elements 10R and shared between the plurality of first light emitting elements 10R.
- the light-emitting layer 112, the first compound semiconductor layer 111 and the electrode 12 may be separated between adjacent first light-emitting elements 10R.
- the compound semiconductor stack 11R is connected between the adjacent first light emitting elements 10R and shared among the plurality of first light emitting elements 10R, whereas the electrode 12 may be divided between adjacent first light emitting elements 10R.
- the compound semiconductor laminate 11R When the compound semiconductor laminate 11R is connected without being separated between adjacent first light emitting elements 10R, that is, between adjacent pixels 102, as shown in FIG. It may have a hole 52B and a plurality of holes 53B. One hole 52B and one hole 53B are provided for each pixel 102 . The hole portion 52B and the hole portion 53B penetrate between the first surface and the second surface of the compound semiconductor laminate 11R. The hole portion 52B is for passing the connection member 52A. The hole 53B is for passing the connection member 53A.
- the compound semiconductor laminate 11R may be divided into blocks each composed of a plurality of pixels 102, as shown in FIG. That is, a block composed of a plurality of pixels 102 may share one compound semiconductor laminate 11R.
- FIG. 13 shows an example in which the compound semiconductor laminate 11R is divided into blocks each having four pixels 102 .
- the compound semiconductor laminate 11R may be connected without being separated between all the pixels 102 in the display area. That is, all pixels 102 in the display area may share one compound semiconductor laminate 11R.
- the fourth light emitting element 40R (compound semiconductor laminate 41R and electrode 42) has the same configuration as the first light emitting element 10R (compound semiconductor laminate 11R and electrode 12). You may have
- the first light emitting element 10R has a hexagonal shape
- the second light emitting element 20G and the third light emitting element 30B have a square shape.
- the shapes of the light-emitting element 10R, the second light-emitting element 20G and the third light-emitting element 30B are not particularly limited and may be of any shape.
- the first light emitting element 10R may have a polygonal shape other than a hexagonal shape
- the second light emitting element 20G and the third light emitting element 30B may have a polygonal shape other than a square shape. good too.
- the first light emitting element 10R, the second light emitting element 20G and the third light emitting element 30B may have the same shape.
- the first light emitting element 10R, the second light emitting element 20G and the third light emitting element 30B may have a hexagonal shape.
- the first light emitting element 10R and the second light emitting element 20G may be arranged such that they hardly overlap in plan view, or do not overlap in plan view.
- the first light emitting element 10R and the third light emitting element 30B may be arranged such that they hardly overlap in plan view, or do not overlap in plan view.
- the shapes of the first light emitting element 10R, the second light emitting element 20G, the third light emitting element 30B and the fourth light emitting element 40R are not particularly limited, and can be arbitrary. It can be of any shape.
- the fourth light emitting element 40R may have a polygonal shape other than a hexagonal shape.
- the second light emitting element 20G (compound semiconductor laminate 21G) and the third light emitting element 30B (compound semiconductor laminate 31B) are separated and composed of separate chips.
- an example has been described, as shown in FIG. 15, even a chip in which the second light emitting element 20G (compound semiconductor laminate 21G) and the third light emitting element 30B (compound semiconductor laminate 31B) are integrated. good.
- the second light emitting element 20G (compound semiconductor laminate 21G) and the third light emitting element 30B (compound semiconductor laminate 31B) can be made of the same material (for example, AlGaInN compound semiconductors with different compositions). Therefore, it is easy to form an integrated chip.
- the area S G of the second light emitting element 20G and the area S B of the third light emitting element 30B are each more than half the area S P of one pixel 102.
- the second light emitting element 20G and the third light emitting element 30B are small and have a shape (corresponding to one pixel 102) that allows two or more elements to be produced from a wafer region 103 corresponding to one pixel 102. It may be a shape that yields a yield of 2 or more from the area 103 of the wafer).
- the area S G of the second light emitting element 20G and the area S B of the third light emitting element 30B are each smaller than half the area S P of one pixel 202, and
- the second light-emitting element 20G and the third light-emitting element 30B are shaped so that two or more elements can be manufactured from a wafer region 103 corresponding to one pixel 202 (a wafer region 103 corresponding to one pixel 202). It may be a shape in which a yield of 2 or more is obtained from ).
- FIG. 16A shows that the area S G of the second light emitting element 20G is smaller than half the area S P of one pixel 102, but the second light emitting element 20G corresponds to one pixel 102 from the area 103 of the wafer.
- FIG. 10 is a diagram showing an example of a shape in which two or more elements cannot be produced;
- the shape of the second light emitting element 20G is a circular shape that allows only one second light emitting element 20G to be manufactured from the wafer region 103 corresponding to one pixel 102 .
- FIG. 16B shows a case where the area SG of the second light emitting element 20G is smaller than 1/2 of one pixel 102 and the second light emitting element 20G is two or more from the area 103 of the wafer corresponding to one pixel 102. It is a figure which shows the example which is a shape which cannot produce an element.
- the shape of the second light emitting element 20G is a rectangular shape that allows two second light emitting elements 20G to be manufactured from the wafer region 103 corresponding to one pixel 102 .
- Modification 7 In the first and second embodiments, the example in which a portion of the second light emitting element 20G overlaps the first light emitting element 10R in plan view has been described. It may overlap with a region outside the first light emitting element 10R. Similarly, the entire third light emitting element 30B may overlap the area outside the first light emitting element 10R in plan view. In this case, the influence of the second light emitting element 20G and the third light emitting element 30B on the light extraction of the first light emitting element 10R can be suppressed.
- the entire second light emitting element 20G may overlap the area outside the fourth light emitting element 40R in plan view.
- the entirety of the third light emitting element 30B may overlap the area outside the fourth light emitting element 40R in plan view. In this case, the influence of the second light emitting element 20G and the third light emitting element 30B on the light extraction of the fourth light emitting element 40R can be suppressed.
- the display device 100 may further include multiple first lenses, multiple second lenses, and multiple third lenses.
- a first lens, a second lens, and a third lens are provided above the first light emitting element 10R, the second light emitting element 20G, and the third light emitting element 30B, respectively.
- the front luminance of the display device 100 can be improved.
- the display device 200 may further include multiple first lenses, multiple second lenses, multiple third lenses, and multiple fourth lenses.
- the first lens, the second lens, the third lens, and the fourth lens are respectively the first light emitting element 10R, the second light emitting element 20G, the third light emitting element 30B, and the fourth light emitting element 40R. provided above.
- the front luminance of the display device 200 can be improved.
- the first light emitting element 10R included in the first layer L1 may have a current confinement structure. With this current confinement structure, a current injection region and a non-current injection region may be formed in the first light emitting element 10R.
- the non-current injection region may correspond to the non-luminescence/low luminescence region 10A -1
- the current injection region may correspond to the luminescence region 10A -2 .
- the non-light emitting/low light emitting region 10A1 can be positively controlled. Therefore, it is possible to improve the degree of freedom in arrangement of the second light emitting element 20G and the third light emitting element 30B included in the second layer L2.
- the display device 100 includes a second lens and a third lens above the second light emitting element 20G and the third light emitting element 30B, respectively, light control is performed by the second lens and the third lens. becomes easier.
- the fourth light emitting element 40R included in the third layer L3 may have a current confinement structure.
- a current injection region and a non-current injection region may be formed in the fourth light emitting element 40R.
- the non-current injection region may correspond to the non-light emitting/low light emitting region 40A1
- the current injection region may correspond to the light emitting region 40A2 .
- the first light emitting element 10R, the second light emitting element 20G, and the third light emitting element 30B are LED elements.
- the element 20G and the third light emitting element 30B may be LD (Laser Diode) elements or SLD (Super Luminescent Diode) elements.
- the first light emitting element 10R, the second light emitting element 20G, the third light emitting element 30B and the fourth light emitting element 40R may be LD elements or SLD elements.
- the display devices 100 and 200 according to the first and second embodiments and modifications thereof may be provided in various electronic devices.
- FIG. 17A is a front view showing an example of the appearance of the digital still camera 310.
- FIG. 17B is a rear view showing an example of the appearance of the digital still camera 310.
- This digital still camera 310 is of an interchangeable single-lens reflex type, and has an interchangeable photographing lens unit (interchangeable lens) 312 in approximately the center of the front of a camera main body (camera body) 311, and on the left side of the front. It has a grip portion 313 for a photographer to hold.
- interchangeable photographing lens unit interchangeable lens
- a monitor 314 is provided at a position shifted to the left from the center of the back surface of the camera body 311 .
- An electronic viewfinder (eyepiece window) 315 is provided above the monitor 314 . By looking through the electronic viewfinder 315, the photographer can view the optical image of the subject guided from the photographing lens unit 312 and determine the composition.
- the electronic viewfinder 315 includes any of the display devices 100 and the like.
- FIG. 18 is a perspective view showing an example of the appearance of the head mounted display 320.
- the head-mounted display 320 has, for example, ear hooks 322 on both sides of an eyeglass-shaped display 321 to be worn on the user's head.
- the display unit 321 includes any one of the display device 100 and the like.
- FIG. 19 is a perspective view showing an example of the appearance of the television device 330.
- the television device 330 has, for example, an image display screen portion 331 including a front panel 332 and a filter glass 333, and the image display screen portion 331 includes any one of the display device 100 and the like.
- the present disclosure can also employ the following configuration. (1) sequentially comprising a substrate, a first layer, and a second layer;
- the first layer includes a plurality of first semiconductor light emitting elements
- the second layer includes a plurality of second semiconductor light emitting elements,
- the plurality of first semiconductor light emitting elements are arranged in an in-plane direction of the substrate and can emit first light having a first peak wavelength
- the first semiconductor light emitting device has a first region and a second region, the first region is provided in a peripheral portion of the first semiconductor light emitting device, and emits the first light.
- the second semiconductor light emitting element is arranged in an in-plane direction of the substrate and can emit second light having a second peak wavelength different from the first peak wavelength
- the light-emitting device wherein the first semiconductor light-emitting element and the second semiconductor light-emitting element are arranged to be shifted in an in-plane direction of the substrate.
- the second layer further includes a plurality of third semiconductor light emitting elements, The plurality of third semiconductor light emitting elements are arranged in an in-plane direction of the substrate and emit third light having a third peak wavelength different from the first peak wavelength and the second peak wavelength.
- the light-emitting device can be The light-emitting device according to (1), wherein the first semiconductor light-emitting element, the second semiconductor light-emitting element, and the third semiconductor light-emitting element are arranged to be shifted in an in-plane direction of the substrate. (3) further comprising a third layer provided between the substrate and the first layer; The third layer includes a plurality of fourth semiconductor light emitting elements, The fourth semiconductor light emitting element is arranged in an in-plane direction of the substrate and can emit fourth light having the same color as the first light, The fourth semiconductor light emitting device has a third region and a fourth region, the third region is provided in a peripheral portion of the fourth semiconductor light emitting device, and emits the fourth light.
- the fourth region is provided inside the third region is capable of emitting the fourth light
- the first light is red light or infrared light
- the second light is green light or ultraviolet light
- (2), wherein the third light is blue light or ultraviolet light.
- the first semiconductor light emitting device includes a first light emitting layer
- the second semiconductor light emitting device includes a second light emitting layer
- the third semiconductor light emitting device includes a third light emitting layer, the first light-emitting layer includes an AlGaInP-based compound semiconductor or an AlGaInAs-based compound semiconductor;
- the light-emitting device according to (2), wherein the second light-emitting layer and the third light-emitting layer contain an AlGaInN-based compound semiconductor.
- the first semiconductor light emitting element includes a compound semiconductor laminate and an electrode, The light-emitting device according to any one of (1) to (6), wherein the compound semiconductor laminate and the electrode are separated between adjacent first semiconductor light-emitting elements.
- the plurality of first semiconductor light-emitting elements each include an electrode, a first compound semiconductor layer, a light-emitting layer, and a second compound semiconductor layer; the second compound semiconductor layer is connected between the adjacent first semiconductor light emitting elements, The light-emitting device according to any one of (1) to (6), wherein the electrode, the first compound semiconductor layer and the light-emitting layer are separated between adjacent first semiconductor light-emitting elements.
- the plurality of first semiconductor light emitting elements each include a compound semiconductor laminate and an electrode, the compound semiconductor laminate is connected between the adjacent first semiconductor light emitting elements, The light-emitting device according to any one of (1) to (6), wherein the electrode is divided between adjacent first semiconductor light-emitting elements.
- the light emitting device according to any one of (1) to (13), wherein the area of the first semiconductor light emitting element is larger than the area of the second semiconductor light emitting element.
- the first semiconductor light emitting element, the second semiconductor light emitting element and the third semiconductor light emitting element constitute one pixel, The area of the first semiconductor light emitting element is larger than the area of the second semiconductor light emitting element, the area of the first semiconductor light emitting element is larger than the area of the third semiconductor light emitting element, (2) The light-emitting device according to (2), wherein the area of the first semiconductor light-emitting element is larger than 1 ⁇ 3 of the area of the pixel.
- the first semiconductor light emitting element, the second semiconductor light emitting element and the third semiconductor light emitting element constitute one pixel,
- the sum of the areas of the first semiconductor light-emitting element, the second semiconductor light-emitting element, and the third semiconductor light-emitting element is greater than 1 times the area of the pixel and more than 3 times the area of the pixel.
- the first semiconductor light emitting element, the second semiconductor light emitting element and the third semiconductor light emitting element constitute one pixel, the areas of the second semiconductor light emitting element and the third semiconductor light emitting element are smaller than 1/2 of the area of the pixel;
- the first semiconductor light emitting device has a current injection region and a non-current injection region, the current injection region corresponds to the second region;
- the first layer includes a plurality of first semiconductor light emitting elements
- the second layer includes a plurality of second semiconductor light emitting elements, the plurality of first semiconductor light emitting elements including a first light emitting layer, arranged in an in-plane direction of the substrate, and capable of emitting first light having a first peak wavelength
- the plurality of second semiconductor light emitting elements include a second light emitting layer, are arranged in an in-plane direction of the substrate, and emit second light having a second peak wavelength different from the first peak wavelength. can emit light,
- a carrier diffusion length of the first light emitting layer is longer than a carrier diffusion length of the second light emitting layer.
- the first semiconductor light emitting element and the second semiconductor light emitting element are shifted in an in-plane direction of the substrate. Deployed light emitting device.
- An electronic device comprising the light emitting device according to any one of (1) to (19).
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Abstract
Description
基板と、第1の層と、第2の層とを順次備え、
第1の層は、複数の第1の半導体発光素子を含み、
第2の層は、複数の第2の半導体発光素子を含み、
複数の第1の半導体発光素子は、基板の面内方向に配置され、第1のピーク波長を有する第1の光を発光することができ、
第1の半導体発光素子は、第1の領域と、第2の領域とを有し、第1の領域は、第1の半導体発光素子の周縁部分に設けられ、第1の光を発光することができないか、もしくは第2の領域に比べて発光強度が低い第1の光しか発光するこができず、第2の領域は、第1の領域の内側に設けられ、第1の光を発光することができ、
第2の半導体発光素子は、基板の面内方向に配置され、第1のピーク波長とは異なる第2のピーク波長を有する第2の光を発光することができ、
第1の半導体発光素子および第2の半導体発光素子は、基板の面内方向にずれて配置されている
発光デバイスである。
基板と、第1の層と、第2の層とを順次備え、
第1の層は、複数の第1の半導体発光素子を含み、
第2の層は、複数の第2の半導体発光素子を含み、
複数の第1の半導体発光素子は、第1の発光層を含み、基板の面内方向に配置され、第1のピーク波長を有する第1の光を発光することができ、
複数の第2の半導体発光素子は、第2の発光層を含み、基板の面内方向に配置され、第1のピーク波長とは異なる第2のピーク波長を有する第2の光を発光することができ、
第1の発光層のキャリア拡散長は、第2の発光層のキャリア拡散長より長い
第1の半導体発光素子および第2の半導体発光素子は、基板の面内方向にずれて配置されている
発光デバイスである。
第2の半導体発光素子の発光光が複数のピークを有する場合、第2の光の第2のピーク波長とは、複数のピークのうちの最大強度のピークの波長を意味するものとする。
第3の半導体発光素子の発光光が複数のピークを有する場合、第3の光の第3のピーク波長とは、複数のピークのうちの最大強度のピークの波長を意味するものとする。
第4の半導体発光素子の発光光が複数のピークを有する場合、第4の光の第4のピーク波長とは、複数のピークのうちの最大強度のピークの波長を意味するものとする。
第1の光と第2の光と第3の光とがすべて異なる色の光であってもよい。
第1の光と第4の光とが同一色の光であってもよい。
第1の光および第4の光はそれぞれ独立して、赤色光または赤外光であってもよい。当該赤外線は、近赤外光であってもよい。
第2の光および第3の光はそれぞれ独立して、青色光、緑色光、黄色光または紫外光であってもよい。当該紫外光は、短波長紫外線(UV-C)、中波長紫外線(UV-B)または長波長紫外線(UV-A)であってもよい。
短波長紫外線(UV-C)は、ピークの半値幅(半値全幅)またはピーク波長が100nm以上280nm以下の範囲にある分光特性を有する光である。
中波長紫外線(UV-B)は、ピークの半値幅(半値全幅)またはピーク波長が280nmを超え315nm以下の範囲にある分光特性を有する光である。
長波長紫外線(UV-A)は、ピークの半値幅(半値全幅)またはピーク波長が315nm以上380nm以下の範囲にある分光特性を有する光である。
青色光は、ピークの半値幅(半値全幅)またはピーク波長が380nmを超え490nm以下の範囲にある分光特性を有する光である。
緑色光は、ピークの半値幅(半値全幅)またはピーク波長が490nmを超え550nm以下の範囲にある分光特性を有する光である。
黄色光は、550nmを超え590nm以下の範囲にある分光特性を有する光である。
赤色光は、ピークの半値幅(半値全幅)またはピーク波長が590nmを超え780nm以下の範囲にある分光特性を有する光である。
赤外光は、ピークの半値幅(半値全幅)またはピーク波長が780nmを超え1mm以下の範囲にある分光特性を有する光である。
近赤外光は、ピークの半値幅(半値全幅)またはピーク波長が780nmを超え2.5μm以下の範囲にある分光特性を有する光である。
複数の第4の半導体発光素子が、赤色光を出射することができる複数の半導体発光素子と、赤外光を出射することができる複数の半導体発光素子とを含んでもよい。
複数の第2の半導体発光素子が、緑色光を出射することができる複数の半導体発光素子と、紫外光を出射することができる複数の半導体発光素子とを含んでもよい。
複数の第3の半導体発光素子が、青色光を出射することができる複数の半導体発光素子と、紫外光を出射することができる複数の半導体発光素子とを含んでもよい。
1 第1の実施形態(表示装置の一例)
2 第2の実施形態(表示装置の一例)
3 変形例(表示装置の変形例)
4 応用例(電子機器の例)
[表示装置の構成]
図1は、第1の実施形態に係る表示装置100の構成の一例を示す平面図である。表示装置100は、駆動基板101と、複数の画素102とを備える。複数の画素102は、マトリクス状等の規定の配置パターンで駆動基板101の第1の面に2次元配置されている。表示装置100は、例えば、LED(Light Emitting Diode(発光ダイオード))ディスプレイである。表示装置100は、発光デバイスの一例である。
駆動基板101は、いわゆるバックプレーンである。駆動基板101は、複数の画素102を駆動する。駆動基板101の第1の面には、図2Bに示すように、複数のパッド51、複数のパッド52および複数のパッド53が設けられている。図示を省略するが、駆動基板101の第1の面には、複数の駆動回路および映像表示用のドライバ等も設けられている。
図2Aは、画素102の構成の一例を示す平面図である。図2Bは、図2A中の矢印102Aの方向から画素102を見た場合の透視図である。画素102は、平面視において長方形状を有する。本明細書において、長方形状には、正方形状も含まれる。本明細書において、平面視とは、Z軸方向(駆動基板101の第1の面に対して垂直な方向)から対象物を見ることを意味する。なお、画素102の形状は、正方形状以外の四角形状(例えば菱形状、平行四辺形)であってもよい。
表示装置100は、駆動基板101と、第1の層L1と、第2の層L2とを順次備える。図3は、第1の層L1の構成の一例を示す平面図である。図4は、第2の層L2の構成の一例を示す平面図である。第1の層L1は、図2A、図2Bおよび図3に示すように、複数の第1の化合物半導体発光素子(以下単に「第1の発光素子」という。)10Rと、複数の配線13と、絶縁材料14とを含む。第2の層L2は、図2A、図2Bおよび図4に示すように、複数の第2の化合物半導体発光素子(以下単に「第2の発光素子」という。)20Gと、複数の第3の化合物半導体発光素子(以下単に「第3の発光素子」という。)30Bと、複数の配線23、複数の配線33と、絶縁材料24とを含む。表示装置100は、第1の層L1から第2の層L2に亘って設けられた複数の接続部材52Aおよび複数の接続部材53Aをさらに備える。
第1の発光素子10Rは、第1のサブ画素を構成している。第1の発光素子10Rは、赤色光を出射することができる。赤色光は、第1のピーク波長を有する第1の光の一例である。第1の発光素子10Rは、平面視において六角形状を有する。上記六角形状は、対向する略直角の1組の角を有する。上記1組の角を結ぶ対角線が長方形状の画素102の第1の対角線と重なるように、第1の発光素子10Rは画素102内に配置されている。複数の第1の発光素子10Rは、絶縁材料14内に設けられている。複数の第1の発光素子10Rは、マトリクス状等の規定の配置パターンで面内方向に2次元配置されている。
第2の発光素子20Gは、第2のサブ画素を構成している。第2の発光素子20Gは、緑色光を発光することができる。緑色光は、第1のピーク波長とは異なる第2のピーク波長を有する第2の光の一例である。第2の発光素子20Gは、平面視において正方形状等の四角形状を有する。
第3の発光素子30Bは、第3のサブ画素を構成している。第3の発光素子30Bは、青色光を発光することができる。青色光は、第1のピーク波長および前記第2のピーク波長とは異なる第3のピーク波長を有する第3の光の一例である。第3の発光素子30Bは、平面視において正方形状等の四角形状を有する。
第3の発光素子30Bは、長方形状の画素102の第2の対角線上に配置されている。第1の発光素子10Rに対する第3の発光素子30Bのずれの方向は、第1の発光素子10Rに対する第2の発光素子20Gのずれの方向とは反対方向である。
赤色光を発光することができる第1の発光素子(例えば赤色LED素子)10Rでは、上記のような非発光/低発光領域10A1が発生する。一方、緑色光を発光することができる第2の発光素子(例えば緑色LED素子)20Gおよび青色光を発光することができる第3の発光素子(例えば青色LED素子)30Bでは、第1の発光素子10Rで見られる非発光/低発光領域は発生することはないか、もしくは仮に非発光/低発光領域が発生するとしても、その非発光/低発光領域の面積は第1の発光素子10Rの非発光/低発光領域10A1に比べて極めて小さい。
第1の発光素子10Rの面積SR:4.0μm×4.0μm=16.0μm2
第2の発光素子20Gの面積SG:2.3μm×2.3μm=5.3μm2
第3の発光素子30Bの面積SB:2.3μm×2.3μm=5.3μm2
面積SR、面積SGおよび面積SBの総和SRGB(=SR+SG+SB):26.6μm2
1つの画素102の面積SPIX:5.0μm×5.0μm=25.0μm2
第1の発光素子10Rの発光層112のキャリア拡散長は、第2の発光素子20Gの発光層122のキャリア拡散長よりも長い。発光層112および発光層122がこのようなキャリア拡散長の関係を有する場合、発光層112および発光層122は、以下の(1)または(2)に示す発光特性を有している。
(1)第1の発光素子10Rが、第1の発光素子10Rの第1の面に非発光/低発光領域10A1を有するのに対して、第2の発光素子20Gが、第2の発光素子20Gの第1の面に非発光/低発光領域10A1を実質的に有していない。
(2)第1の発光素子10Rおよび第2の発光素子20Gの両方が、第1の面に非発光/低発光領域10A1を有しているが、第2の発光素子20Gの非発光/低発光領域10A1の幅が、第1の発光素子10Rの非発光/低発光領域10A1の幅に比べて狭い。
(3)第1の発光素子10Rが、第1の発光素子10Rの第1の面に非発光/低発光領域10A1を有するのに対して、第3の発光素子30Bが、第3の発光素子30Bの第1の面に非発光/低発光領域10A1を実質的に有していない。
(4)第1の発光素子10Rおよび第3の発光素子30Bの両方が、第1の面に非発光/低発光領域10A1を有しているが、第3の発光素子30Bの非発光/低発光領域10A1の幅が、第1の発光素子10Rの非発光/低発光領域10A1の幅に比べて狭い。
配線13は、X軸方向に1列に並んだ複数の第1の発光素子10Rを電気的に接続している。配線13は、絶縁材料14上に設けられている。複数の配線13はそれぞれ、X軸方向に延設されている。Y軸方向に隣接する配線13の間は、規定の間隔離されている。配線13は、X軸方向に1列に並んだ複数の第1の発光素子10Rそれぞれの化合物半導体積層体11Rの第1の面に接続されている。配線13は、透明配線13Aと複数の金属配線13Bとを備える。複数の金属配線13Bはそれぞれ、透明配線13Aの第1の面上に規定の間隔で設けられている。金属配線13Bは、配線13を低抵抗化するための補助部材である。
絶縁材料14および絶縁材料24は、有機絶縁材料であってもよいし、無機絶縁材料であってもよいし、これらの積層体であってもよい。有機絶縁材料は、例えば、ポリイミド系樹脂、アクリル系樹脂およびノボラック系樹脂等からなる群より選ばれた少なくとも1種を含む。無機絶縁材料は、例えば、酸化シリコン(SiOx)、窒化シリコン(SiNx)および酸窒化シリコン(SiOxNy)等からなる群より選ばれた少なくとも1種を含む。
従来の表示装置は、3色(赤色、緑色、青色)の発光素子(化合物半導体発光素子)を駆動基板の第1の面上の単一層に含む。このため、画素のサイズが微細化されると、それに伴って各色の発光素子のサイズが小さくなる。3色の発光素子のうち赤色の発光素子(例えば赤色LED素子)は、周縁部に非発光/低発光領域を有しているため、赤色の発光素子のサイズが小さくなると、発光素子の発光領域に対する、非発光/低発光領域の面積の割合が大きくなる。したがって、赤色の化合物半導体発光素子の発光効率が低下する。
第1の実施形態に係る表示装置100では、第1の層L1に含まれる第1の発光素子10Rと、第2の層L2に含まれる第2の発光素子20Gおよび第3の発光素子30Bとはずれて配置されている。これにより、第1の発光素子10Rから出射された赤色光が、第2の発光素子20Gおよび第3の発光素子30Bに妨げられることを抑制することができる。したがって、赤色光の輝度の低下を抑制することができる。
また、第1の実施形態に係る表示装置100では、第1の発光素子10Rの実装精度を、従来の表示装置における3色の発光素子の実装精度に比べて緩和することもできる。
[表示装置の構成]
図8は、第2の実施形態に係る表示装置200の構成の一例を示す平面図である。図9Aは、画素202の構成の一例を示す平面図である。図9Bは、図9A中の矢印202Aの方向から画素202を見た場合の透視図である。表示装置200は、第3の層L3をさらに備え、かつ、駆動基板101に代えて駆動基板201を備える点において、第1の実施形態に係る表示装置100とは異なっている。
駆動基板201は、複数の画素202を駆動する。駆動基板201の第1の面には、複数のパッド51、複数のパッド52、複数のパッド53および複数のパッド54が設けられている。
第3の層L3は、駆動基板201と第1の層L1との間に設けられている。第3の層L3は、複数の第4の化合物半導体発光素子(以下単に「第4の発光素子」という。)40Rと、複数の配線43と、絶縁材料44とを含む。1つの画素402は、1つの第1の発光素子10Rと、1つの第2の発光素子20Gと、1つの第3の発光素子30Bと、1/4の第4の発光素子40Rとにより構成されている。
第4の発光素子40Rは、第4のサブ画素を構成している。第4の発光素子40Rは、第1の発光素子10Rと同色の光、すなわち赤色光を発光することができる。赤色光は、第4のピーク波長を有する第4の光の一例である。第4の発光素子40Rは、平面視において六角形状を有する。第4の発光素子40Rは、第4の発光素子40Rの中心が平面視において長方形状の画素402の角に位置するように配置されている。複数の第4の発光素子40Rは、絶縁材料44内に設けられている。複数の第4の発光素子40Rは、マトリクス状等の規定の配置パターンで面内方向に2次元配置されている。第1の発光素子10Rと第4の発光素子40Rとは、平面視において離隔されている。第4の発光素子40Rは、平面視において第2の発光素子20Gと第3の発光素子30Bとの間に設けられている。
第2の実施形態では、第3の層L3が、駆動基板201と第1の層L1との間に設けられている。このため、第1の発光素子10Rの電極12は、バンプ51Aに代えて、ビア等の接続部材51Bを介して駆動基板201のパッド51に接続されている。
第2の発光素子20Gは、平面視において第4の発光素子40Rの一部と重なっている。これにより、画素202を微細化することができるので、表示装置200を高精細化することができる。また、第4の発光素子40Rの光取り出しに対する第2の発光素子20Gの影響を抑制することができる。第4の発光素子40Rの光取り出しに対する第2の発光素子20Gの影響を抑制する観点からすると、第2の発光素子20Gは、平面視において第4の発光素子40Rの発光領域40A2の外側に位置していることが好ましい。
第3の発光素子30Bは、平面視において第4の発光素子40Rの一部と重なっている。これにより、画素202を微細化することができるので、表示装置200を高精細化することができる。また、第4の発光素子40Rの光取り出しに対する第3の発光素子30Bの影響を抑制することができる。第4の発光素子40Rの光取り出しに対する第3の発光素子30Bの影響を抑制する観点からすると、第3の発光素子30Bは、平面視において第4の発光素子40Rの発光領域40A2の外側に位置していることが好ましい。
配線43は、X軸方向に1列に並んだ複数の第4の発光素子40Rを電気的に接続している。配線43は、絶縁材料44上に設けられている。複数の配線43はそれぞれ、X軸方向に延設されている。Y軸方向に隣接する配線43の間は、規定の間隔離されている。配線43は、X軸方向に1列に並んだ複数の第4の発光素子40Rそれぞれの化合物半導体積層体41Rの第1の面に接続されている。配線43は、配線13と同様の構成を有していてもよい。
絶縁材料44は、絶縁材料14および絶縁材料24と同様の材料を含んでもよい。
第2の実施形態に係る表示装置200は、赤色光を発光することができる複数の第4の発光素子40Rを駆動基板11と第1の層L1との間にさらに備えている。したがって、1つの画素202当たりの赤色の発光素子の数を、第1の実施形態に係る表示装置100に比べて増加させることができる。したがって、第1の発光素子10Rの微細化により、第1の発光素子10Rの発光領域10A2に対する、非発光/低発光領域10A1の面積の割合が増大した場合にも、赤色光の輝度の低下を抑制することができる。
(変形例1)
第1の実施形態では、第1の光、第2の光、第3の光がそれぞれ、赤色光、緑色光、青色光である例について説明したが、第1の光、第2の光、第3の光はこれらの色の光に限定されるものではない。第1の光、第2の光および第3の光からなる群より選ばれた少なくとも1種の光が、赤色光、緑色光、青色光以外の色の光であってもよい。第1の光、第2の光および第3の光からなる群より選ばれた少なくとも1種の光が、可視光以外の光であってもよい。例えば、第1の光が、赤外光であってもよい。第2の光および第3の光からなる群より選ばれた少なくとも1種の光が、紫外光であってもよい。
第1、第2の実施形態では、第2の層L2が、緑色光を発光することができる第2の発光素子20Gと青色光を発光することができる第3の発光素子30Bとの2種の発光素子を含む例について説明したが、第2の層L2の構成はこれに限定されるものではない。例えば、第2の層L2が、緑色光を発光することができる第2の発光素子20Gと青色光を発光することができる第3の発光素子30Bのうちのいずれか1種の発光素子を含むようにしてもよい。
第1の実施形態では、化合物半導体積層体11Rおよび電極12が、図6に示すように、隣接する第1の発光素子10Rの間で分断されている例について説明したが、第1の層L1の構成はこれに限定されるものではない。
第1の実施形態では、第1の発光素子10Rが六角形状を有し、第2の発光素子20Gおよび第3の発光素子30Bが、四角形状を有している例について説明したが、第1の発光素子10R、第2の発光素子20Gおよび第3の発光素子30Bの形状は特に限定されるものではなく、任意の形状とすることが可能である。例えば、第1の発光素子10Rが六角形状以外の多角形状を有していてもよいし、第2の発光素子20Gおよび第3の発光素子30Bが、四角形状以外の多角形状を有していてもよい。第1の発光素子10R、第2の発光素子20Gおよび第3の発光素子30Bが同一の形状を有していてもよい。
第1、第2の実施形態では、第2の発光素子20G(化合物半導体積層体21G)と第3の発光素子30B(化合物半導体積層体31B)とが分離され、別々のチップで構成されている例について説明したが、図15に示すように、第2の発光素子20G(化合物半導体積層体21G)と第3の発光素子30B(化合物半導体積層体31B)が一体化されたチップであってもよい。第2の発光素子20G(化合物半導体積層体21G)と第3の発光素子30B(化合物半導体積層体31B)とは、同一系の材料(例えば、組成の異なるAlGaInN系化合物半導体)により構成することができるため、一体化されたチッブとすることが容易である。
第1の実施形態において、図16Bに示すように、第2の発光素子20Gの面積SGおよび第3の発光素子30Bの面積SBがそれぞれ1つの画素102の面積SPの1/2より小さく、かつ、第2の発光素子20Gおよび第3の発光素子30Bは、1つの画素102に相当するウエハの領域103から2以上の素子を作製することができる形状(1つの画素102に相当するウエハの領域103から2以上の理収が得られる形状)であってもよい。第2の実施形態においても同様に、第2の発光素子20Gの面積SGおよび第3の発光素子30Bの面積SBがそれぞれ1つの画素202の面積SPの1/2より小さく、かつ、第2の発光素子20Gおよび第3の発光素子30Bは、1つの画素202に相当するウエハの領域103から2以上の素子を作製することができる形状(1つの画素202に相当するウエハの領域103から2以上の理収が得られる形状)であってもよい。
第1、第2の実施形態では、第2の発光素子20Gの一部分が、平面視において第1の発光素子10Rに重なる例について説明したが、第2の発光素子20Gの全体が、平面視において第1の発光素子10Rの外側の領域に重なっていてもよい。同様に、第3の発光素子30Bの全体が、平面視において第1の発光素子10Rの外側の領域に重なっていてもよい。この場合には、第1の発光素子10Rの光取り出しに対する、第2の発光素子20Gおよび第3の発光素子30Bの影響を抑制することができる。
第1の実施形態において、表示装置100が、複数の第1のレンズ、複数の第2のレンズおよび複数の第3のレンズをさらに備えていてもよい。第1のレンズ、第2のレンズ、第3のレンズはそれぞれ、第1の発光素子10R、第2の発光素子20G、第3の発光素子30Bの上方に設けられる。この場合、表示装置100の正面輝度を向上させることができる。
第1の実施形態において、第1の層L1に含まれる第1の発光素子10Rが、電流狭窄構造を有していてもよい。この電流狭窄構造により、第1の発光素子10Rに電流注入領域と非電流注入領域が構成されていてもよい。非電流注入領域が非発光/低発光領域10A1に対応し、電流注入領域が発光領域10A2に対応していてもよい。
第1の実施形態では、第1の発光素子10R、第2の発光素子20Gおよび第3の発光素子30Bが、LED素子である例について説明したが、第1の発光素子10R、第2の発光素子20Gおよび第3の発光素子30Bが、LD(Laser Diode)素子またはSLD(Super Luminescent Diode)素子でもよい。第2の実施形態においても同様に、第1の発光素子10R、第2の発光素子20G、第3の発光素子30Bおよび第4の発光素子40Rが、LD素子またはSLD素子でもよい。
(電子機器)
上記の第1、第2の実施形態およびそれらの変形例に係る表示装置100、200(以下「表示装置100等」という。)は、種々の電子機器に備えられてもよい。特にビデオカメラや一眼レフカメラの電子ビューファインダまたはヘッドマウント型ディスプレイ等の高解像度が要求され、目の近くで拡大して使用されるものに備えられることが好ましい。
図17Aは、デジタルスチルカメラ310の外観の一例を示す正面図である。図17Bは、デジタルスチルカメラ310の外観の一例を示す背面図である。このデジタルスチルカメラ310は、レンズ交換式一眼レフレックスタイプのものであり、カメラ本体部(カメラボディ)311の正面略中央に交換式の撮影レンズユニット(交換レンズ)312を有し、正面左側に撮影者が把持するためのグリップ部313を有している。
図18は、ヘッドマウントディスプレイ320の外観の一例を示す斜視図である。ヘッドマウントディスプレイ320は、例えば、眼鏡形の表示部321の両側に、使用者の頭部に装着するための耳掛け部322を有している。表示部321は、表示装置100等のいずれかを備える。
図19は、テレビジョン装置330の外観の一例を示す斜視図である。このテレビジョン装置330は、例えば、フロントパネル332およびフィルターガラス333を含む映像表示画面部331を有しており、この映像表示画面部331は、表示装置100等のいずれかを備える。
(1)
基板と、第1の層と、第2の層とを順次備え、
前記第1の層は、複数の第1の半導体発光素子を含み、
前記第2の層は、複数の第2の半導体発光素子を含み、
複数の前記第1の半導体発光素子は、前記基板の面内方向に配置され、第1のピーク波長を有する第1の光を発光することができ、
前記第1の半導体発光素子は、第1の領域と、第2の領域とを有し、前記第1の領域は、前記第1の半導体発光素子の周縁部分に設けられ、前記第1の光を発光することができないか、もしくは前記第2の領域に比べて発光強度が低い前記第1の光しか発光するこができず、前記第2の領域は、前記第1の領域の内側に設けられ、前記第1の光を発光することができ、
前記第2の半導体発光素子は、前記基板の面内方向に配置され、前記第1のピーク波長とは異なる第2のピーク波長を有する第2の光を発光することができ、
前記第1の半導体発光素子および前記第2の半導体発光素子は、前記基板の面内方向にずれて配置されている
発光デバイス。
(2)
前記第2の層は、複数の第3の半導体発光素子をさらに含み、
複数の前記第3の半導体発光素子は、前記基板の面内方向に配置され、前記第1のピーク波長および前記第2のピーク波長とは異なる第3のピーク波長を有する第3の光を発光することができ、
前記第1の半導体発光素子、前記第2の半導体発光素子および前記第3の半導体発光素子は、前記基板の面内方向にずれて配置されている
(1)に記載の発光デバイス。
(3)
前記基板と前記第1の層との間に設けられた第3の層をさらに備え、
前記第3の層は、複数の第4の半導体発光素子を含み、
前記第4の半導体発光素子は、前記基板の面内方向に配置され、前記第1の光と同色の第4の光を発光することができ、
前記第4の半導体発光素子は、第3の領域と、第4の領域とを有し、前記第3の領域は、前記第4の半導体発光素子の周縁部分に設けられ、前記第4の光を発光することができないか、もしくは前記第4の領域に比べて発光強度が低い前記第4の光しか発光することができず、前記第4の領域は、前記第3の領域の内側に設けられ、前記第4の光を発光することができ、
前記第1の半導体発光素子、前記第2の半導体発光素子および前記第4の半導体発光素子は、前記基板の面内方向にずれて配置されている
(1)または(2)に記載の発光デバイス。
(4)
前記第1の半導体発光素子および前記第2の半導体発光素子が、発光ダイオードである
(1)に記載の発光デバイス。
(5)
前記第1の光は、赤色光または赤外光であり、
前記第2の光は、緑色光または紫外光であり、
前記第3の光は、青色光または紫外光である
(2)に記載の発光デバイス。
(6)
前記第1の半導体発光素子は、第1の発光層を含み、
前記第2の半導体発光素子は、第2の発光層を含み、
前記第3の半導体発光素子は、第3の発光層を含み、
前記第1の発光層は、AlGaInP系化合物半導体またはAlGaInAs系化合物半導体を含み、
前記第2の発光層および前記第3の発光層は、AlGaInN系化合物半導体を含む
(2)に記載の発光デバイス。
(7)
前記第1の半導体発光素子は、化合物半導体積層体と、電極とを備え、
前記化合物半導体積層体および前記電極は、隣接する前記第1の半導体発光素子の間で分断されている
(1)から(6)のいずれか1項に記載の発光デバイス。
(8)
複数の前記第1の半導体発光素子は、電極と、第1の化合物半導体層と、発光層と、第2の化合物半導体層とを備え、
前記第2の化合物半導体層は、隣接する前記第1の半導体発光素子の間で繋がり、
前記電極、前記第1の化合物半導体層および前記発光層は、隣接する前記第1の半導体発光素子の間で分断されている
(1)から(6)のいずれか1項に記載の発光デバイス。
(9)
複数の前記第1の半導体発光素子は、化合物半導体積層体と、電極とを備え、
前記化合物半導体積層体は、隣接する前記第1の半導体発光素子の間で繋がり、
前記電極は、隣接する前記第1の半導体発光素子の間で分断されている
(1)から(6)のいずれか1項に記載の発光デバイス。
(10)
前記第2の半導体発光素子は、平面視において前記第1の半導体発光素子の一部と重なっている
(1)から(9)のいずれか1項に記載の発光デバイス。
(11)
前記第2の半導体発光素子は、平面視において前記第2の領域の外側に位置している
(1)から(10)のいずれか1項に記載の発光デバイス。
(12)
前記第2の半導体発光素子は、平面視において前記第1の領域の一部と重なっている
(11)に記載の発光デバイス。
(13)
前記第2の半導体発光素子と前記基板とを接続する接続部材をさらに備え、
前記接続部材は、平面視において前記第1の半導体発光素子の外側に位置している
(1)から(12)のいずれか1項に記載の発光デバイス。
(14)
前記第1の半導体発光素子の面積は、前記第2の半導体発光素子の面積より大きい
(1)から(13)のいずれか1項に記載の発光デバイス。
(15)
前記第1の半導体発光素子、前記第2の半導体発光素子および前記第3の半導体発光素子が、1画素を構成し、
前記第1の半導体発光素子の面積は、前記第2の半導体発光素子の面積に比べて大きく、
前記第1の半導体発光素子の面積は、前記第3の半導体発光素子の面積に比べて大きく、
前記第1の半導体発光素子の面積は、前記1画素の面積の1/3より大きい
(2)に記載の発光デバイス。
(16)
前記第1の半導体発光素子、前記第2の半導体発光素子および前記第3の半導体発光素子が、1画素を構成し、
前記第1の半導体発光素子と前記第2の半導体発光素子と前記第3の半導体発光素子の面積の総和は、前記1画素の面積の1倍よりも大きく、前記1画素の面積の3倍よりも小さい
(2)に記載の発光デバイス。
(17)
前記第1の半導体発光素子、前記第2の半導体発光素子および前記第3の半導体発光素子が、1画素を構成し、
前記第2の半導体発光素子および前記第3の半導体発光素子の面積は、前記1画素の面積の1/2より小さく、
前記第2の半導体発光素子および前記第3の半導体発光素子は、前記1画素に対応するウエハの領域から2以上の素子を作製することができる形状である
(2)に記載の発光デバイス。
(18)
前記第1の半導体発光素子は、電流注入領域と非電流注入領域を有し、
前記電流注入領域は、前記第2の領域に対応し、
前記非電流注入領域は、前記第1の領域に対応する
(1)から(17)のいずれか1項に記載の発光デバイス。
(19)
基板と、第1の層と、第2の層とを順次備え、
前記第1の層は、複数の第1の半導体発光素子を含み、
前記第2の層は、複数の第2の半導体発光素子を含み、
複数の前記第1の半導体発光素子は、第1の発光層を含み、前記基板の面内方向に配置され、第1のピーク波長を有する第1の光を発光することができ、
複数の前記第2の半導体発光素子は、第2の発光層を含み、前記基板の面内方向に配置され、前記第1のピーク波長とは異なる第2のピーク波長を有する第2の光を発光することができ、
前記第1の発光層のキャリア拡散長は、前記第2の発光層のキャリア拡散長より長い
前記第1の半導体発光素子および前記第2の半導体発光素子は、前記基板の面内方向にずれて配置されている
発光デバイス。
(20)
(1)から(19)のいずれか1項に記載の発光デバイスを備える電子機器。
10A1 非発光/低発光領域(第1の領域)
10A2 発光領域(第2の領域)
20G 第2の化合物半導体発光素子
30B 第3の化合物半導体発光素子
40R 第4の化合物半導体発光素子
40A1 非発光/低発光領域(第3の領域)
40A2 発光領域(第4の領域)
11R、21G、31B、41R 化合物半導体積層体
12、22、32、42 電極
13、23、33、43 配線
13A、23A、33A 透明配線
13B、23B、33B 金属配線
14、24、44 絶縁材料
51、52、53、54 パッド
51A、54A バンプ
111、121、131 第1の化合物半導体層
112、122、132 発光層
113、123、133 第2の化合物半導体層
100、200 表示装置
101、201 駆動基板
102、202 画素
102A、202A 矢印
L1 第1の層
L2 第2の層
L3 第3の層
310 デジタルスチルカメラ(電子機器)
320 ヘッドマウントディスプレイ(電子機器)
330 テレビジョン装置(電子機器)
Claims (20)
- 基板と、第1の層と、第2の層とを順次備え、
前記第1の層は、複数の第1の半導体発光素子を含み、
前記第2の層は、複数の第2の半導体発光素子を含み、
複数の前記第1の半導体発光素子は、前記基板の面内方向に配置され、第1のピーク波長を有する第1の光を発光することができ、
前記第1の半導体発光素子は、第1の領域と、第2の領域とを有し、前記第1の領域は、前記第1の半導体発光素子の周縁部分に設けられ、前記第1の光を発光することができないか、もしくは前記第2の領域に比べて発光強度が低い前記第1の光しか発光するこができず、前記第2の領域は、前記第1の領域の内側に設けられ、前記第1の光を発光することができ、
前記第2の半導体発光素子は、前記基板の面内方向に配置され、前記第1のピーク波長とは異なる第2のピーク波長を有する第2の光を発光することができ、
前記第1の半導体発光素子および前記第2の半導体発光素子は、前記基板の面内方向にずれて配置されている
発光デバイス。 - 前記第2の層は、複数の第3の半導体発光素子をさらに含み、
複数の前記第3の半導体発光素子は、前記基板の面内方向に配置され、前記第1のピーク波長および前記第2のピーク波長とは異なる第3のピーク波長を有する第3の光を発光することができ、
前記第1の半導体発光素子、前記第2の半導体発光素子および前記第3の半導体発光素子は、前記基板の面内方向にずれて配置されている
請求項1に記載の発光デバイス。 - 前記基板と前記第1の層との間に設けられた第3の層をさらに備え、
前記第3の層は、複数の第4の半導体発光素子を含み、
前記第4の半導体発光素子は、前記基板の面内方向に配置され、前記第1の光と同色の第4の光を発光することができ、
前記第4の半導体発光素子は、第3の領域と、第4の領域とを有し、前記第3の領域は、前記第4の半導体発光素子の周縁部分に設けられ、前記第4の光を発光することができないか、もしくは前記第4の領域に比べて発光強度が低い前記第4の光しか発光することができず、前記第4の領域は、前記第3の領域の内側に設けられ、前記第4の光を発光することができ、
前記第1の半導体発光素子、前記第2の半導体発光素子および前記第4の半導体発光素子は、前記基板の面内方向にずれて配置されている
請求項1に記載の発光デバイス。 - 前記第1の半導体発光素子および前記第2の半導体発光素子が、発光ダイオードである
請求項1に記載の発光デバイス。 - 前記第1の光は、赤色光または赤外光であり、
前記第2の光は、緑色光または紫外光であり、
前記第3の光は、青色光または紫外光である
請求項2に記載の発光デバイス。 - 前記第1の半導体発光素子は、第1の発光層を含み、
前記第2の半導体発光素子は、第2の発光層を含み、
前記第3の半導体発光素子は、第3の発光層を含み、
前記第1の発光層は、AlGaInP系化合物半導体またはAlGaInAs系化合物半導体を含み、
前記第2の発光層および前記第3の発光層は、AlGaInN系化合物半導体を含む
請求項2に記載の発光デバイス。 - 前記第1の半導体発光素子は、化合物半導体積層体と、電極とを備え、
前記化合物半導体積層体および前記電極は、隣接する前記第1の半導体発光素子の間で分断されている
請求項1に記載の発光デバイス。 - 複数の前記第1の半導体発光素子は、電極と、第1の化合物半導体層と、発光層と、第2の化合物半導体層とを備え、
前記第2の化合物半導体層は、隣接する前記第1の半導体発光素子の間で繋がり、
前記電極、前記第1の化合物半導体層および前記発光層は、隣接する前記第1の半導体発光素子の間で分断されている
請求項1に記載の発光デバイス。 - 複数の前記第1の半導体発光素子は、化合物半導体積層体と、電極とを備え、
前記化合物半導体積層体は、隣接する前記第1の半導体発光素子の間で繋がり、
前記電極は、隣接する前記第1の半導体発光素子の間で分断されている
請求項1に記載の発光デバイス。 - 前記第2の半導体発光素子は、平面視において前記第1の半導体発光素子の一部と重なっている
請求項1に記載の発光デバイス。 - 前記第2の半導体発光素子は、平面視において前記第2の領域の外側に位置している
請求項1に記載の発光デバイス。 - 前記第2の半導体発光素子は、平面視において前記第1の領域の一部と重なっている
請求項11に記載の発光デバイス。 - 前記第2の半導体発光素子と前記基板とを接続する接続部材をさらに備え、
前記接続部材は、平面視において前記第1の半導体発光素子の外側に位置している
請求項1に記載の発光デバイス。 - 前記第1の半導体発光素子の面積は、前記第2の半導体発光素子の面積より大きい
請求項1に記載の発光デバイス。 - 前記第1の半導体発光素子、前記第2の半導体発光素子および前記第3の半導体発光素子が、1画素を構成し、
前記第1の半導体発光素子の面積は、前記第2の半導体発光素子の面積に比べて大きく、
前記第1の半導体発光素子の面積は、前記第3の半導体発光素子の面積に比べて大きく、
前記第1の半導体発光素子の面積は、前記1画素の面積の1/3より大きい
請求項2に記載の発光デバイス。 - 前記第1の半導体発光素子、前記第2の半導体発光素子および前記第3の半導体発光素子が、1画素を構成し、
前記第1の半導体発光素子と前記第2の半導体発光素子と前記第3の半導体発光素子の面積の総和は、前記1画素の面積の1倍よりも大きく、前記1画素の面積の3倍よりも小さい
請求項2に記載の発光デバイス。 - 前記第1の半導体発光素子、前記第2の半導体発光素子および前記第3の半導体発光素子が、1画素を構成し、
前記第2の半導体発光素子および前記第3の半導体発光素子の面積は、前記1画素の面積の1/2より小さく、
前記第2の半導体発光素子および前記第3の半導体発光素子は、前記1画素に対応するウエハの領域から2以上の素子を作製することができる形状である
請求項2に記載の発光デバイス。 - 前記第1の半導体発光素子は、電流注入領域と非電流注入領域を有し、
前記電流注入領域は、前記第2の領域に対応し、
前記非電流注入領域は、前記第1の領域に対応する
請求項1に記載の発光デバイス。 - 基板と、第1の層と、第2の層とを順次備え、
前記第1の層は、複数の第1の半導体発光素子を含み、
前記第2の層は、複数の第2の半導体発光素子を含み、
複数の前記第1の半導体発光素子は、第1の発光層を含み、前記基板の面内方向に配置され、第1のピーク波長を有する第1の光を発光することができ、
複数の前記第2の半導体発光素子は、第2の発光層を含み、前記基板の面内方向に配置され、前記第1のピーク波長とは異なる第2のピーク波長を有する第2の光を発光することができ、
前記第1の発光層のキャリア拡散長は、前記第2の発光層のキャリア拡散長より長い
前記第1の半導体発光素子および前記第2の半導体発光素子は、前記基板の面内方向にずれて配置されている
発光デバイス。 - 請求項1に記載の発光デバイスを備える電子機器。
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WO2008007535A1 (fr) * | 2006-07-12 | 2008-01-17 | Sony Corporation | Procédé de montage, structure de montage, procédé de fabrication d'équipement électronique, équipement électronique, procédé de fabrication d'affichage à diode électroluminescente et affichage à diode électroluminescente |
US20140367708A1 (en) * | 2011-12-07 | 2014-12-18 | Osram Gmbh | Light-emitting diode arrangement |
US20200066696A1 (en) * | 2016-06-21 | 2020-02-27 | Ledfoil Finland Oy | LED screen or illumination means with a flexible film structure |
WO2018156876A1 (en) | 2017-02-24 | 2018-08-30 | Kim, Jeehwan | Methods and apparatus for vertically stacked multicolor light-emitting diode (led) display |
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CN117859166A (zh) | 2024-04-09 |
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