WO2023030214A1 - 半导体工艺腔室、半导体工艺设备和半导体工艺方法 - Google Patents

半导体工艺腔室、半导体工艺设备和半导体工艺方法 Download PDF

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Publication number
WO2023030214A1
WO2023030214A1 PCT/CN2022/115371 CN2022115371W WO2023030214A1 WO 2023030214 A1 WO2023030214 A1 WO 2023030214A1 CN 2022115371 W CN2022115371 W CN 2022115371W WO 2023030214 A1 WO2023030214 A1 WO 2023030214A1
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Prior art keywords
base
transfer
chamber
semiconductor process
drive
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PCT/CN2022/115371
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English (en)
French (fr)
Inventor
王勇飞
佘清
兰云峰
Original Assignee
北京北方华创微电子装备有限公司
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Priority to KR1020247005165A priority Critical patent/KR20240025705A/ko
Publication of WO2023030214A1 publication Critical patent/WO2023030214A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to the field of semiconductor process equipment, in particular to a semiconductor process chamber, a semiconductor process equipment including the semiconductor process chamber, and a semiconductor process method applied to the semiconductor process equipment.
  • the isolation and sealing structure can ensure the stability and uniformity of the gas flow field in each reaction zone, and further ensure the stability and uniformity of film formation.
  • the present invention aims to provide a semiconductor process chamber, a semiconductor process equipment and a semiconductor process method, the semiconductor process chamber can improve the pressure control effect of the reaction chamber, improve the process effect of the semiconductor process, and shorten the transfer time , Improve the film formation efficiency of the semiconductor process.
  • a semiconductor process chamber including a reaction chamber and a transfer chamber located below the reaction chamber, the reaction chamber communicates with the transfer chamber through a bottom opening, the
  • the semiconductor process chamber is provided with a base, and the bottom of the base is connected with a lifting shaft, so as to be able to lift between the reaction chamber and the transfer chamber through the bottom opening.
  • An elastic ring-shaped sealing structure is also provided in the chamber, the ring-shaped sealing structure is arranged under the base and surrounds the lifting shaft of the base, and when the base descends to the transmission chamber, During the process, the base can press down the annular sealing structure to be compressed; when the base rises to the reaction chamber and releases the pressure on the annular sealing structure, the annular sealing The structure elongates under the action of its own elastic force until it abuts against the bottom wall of the reaction chamber, so as to close the bottom opening.
  • the annular sealing structure includes a sealing ring and a first elastic sealing cylinder, wherein the top end of the first elastic sealing cylinder is in sealing connection with the bottom wall of the sealing ring, and the bottom of the first elastic sealing cylinder The end is sealingly connected with the bottom wall of the transmission chamber; when the first elastic sealing cylinder is extended, the top wall of the sealing ring can be against the bottom wall of the reaction chamber to close the bottom opening;
  • the bottom end of the lifting shaft passes through the through hole at the bottom of the transmission chamber and extends to the outside of the transmission chamber; the bottom end of the first elastic sealing cylinder surrounds the through hole for sealing the through hole.
  • the first elastic sealing cylinder is a bellows.
  • the bottom end of the first elastic sealing cylinder has a connecting flange, and a first annular receiving groove is formed around the through hole on the bottom wall of the transmission chamber, and the connecting flange is arranged on the first
  • a first sealing member is disposed in an annular receiving groove, and between two surfaces of the connecting flange and the first annular receiving groove opposite to each other.
  • the sealing ring includes a concave disc and a concave disc flange, the concave disc flange is arranged around the concave disc and fixedly connected with the outer edge of the concave disc, and the concave disc flange is used for
  • the bottom wall of the reaction chamber is in contact, and the concave plate has a receiving groove on a side facing the reaction chamber for receiving the base when the base is lowered.
  • the bottom wall of the reaction chamber has a second annular accommodation groove surrounding the bottom opening, the second annular accommodation groove is used to accommodate the concave disk flange, and the concave disk flange and the concave disk flange A second sealing member is provided between the two opposite surfaces of the second annular receiving groove.
  • the base has a plurality of base holes distributed at intervals along the circumference of the base, a plurality of support columns are arranged in a one-to-one correspondence in the plurality of base holes, and each of the base holes A limit structure is formed between the base hole and the corresponding support column, and the limit structure is used to lift the base to a position where the top of the support column is not higher than the bearing surface of the base, causing the support column to rise together with the base;
  • the support column stops falling after its bottom end contacts the bottom wall of the transmission cavity, so that the top of the support column can be higher than the bearing surface of the base;
  • the annular sealing structure surrounds the outer sides of the plurality of support columns.
  • each of the reaction chambers has the bottom opening, and the number of the bases is the same as the number of the reaction chambers, and they are arranged in a one-to-one correspondence; the transfer chamber A transfer manipulator is arranged in the center for transferring wafers between the bases corresponding to different reaction chambers.
  • a plurality of the reaction chambers are arranged around the transfer manipulator;
  • the transfer manipulator includes a drive assembly, an upper flange, and a transfer finger fixed on the upper flange, and the drive assembly is used to drive the upper flange and the transfer fingers fixed on it for lifting and A rotating action, so that the transfer fingers remove the wafers from some of the susceptors and place the wafers on other of the susceptors.
  • the semiconductor process chamber further includes a purge device, and the purge device is used to inject a purge gas into the first elastic sealing cylinder through a through hole at the bottom of the transfer chamber.
  • a semiconductor process equipment including any semiconductor process chamber described above.
  • a semiconductor processing method is provided, the semiconductor processing method is applied to the aforementioned semiconductor processing equipment, and the method includes:
  • each of the reaction chambers has the bottom opening, and the number of the bases is the same as the number of the reaction chambers, and they are arranged in a one-to-one correspondence;
  • the transfer chamber A transfer manipulator is arranged in it, which is used to transfer wafers between the bases corresponding to different reaction chambers;
  • the pre-process wafer placed on the base includes:
  • Said taking off the post-process wafer on the base includes:
  • a plurality of the reaction chambers are arranged around the transfer manipulator;
  • the transfer manipulator includes a drive assembly, an upper end flange, and transfer fingers fixed on the upper end flange, and the drive assembly is used to drive the The upper flange and the transfer fingers fixed on it perform lifting and rotating actions, so that the transfer fingers can remove part of the wafers on the base, and place the wafers on other said bases. on the base;
  • the control of the transfer manipulator to transfer part of the pre-process wafers on the base to other bases includes:
  • the controlling the transfer manipulator to transfer the processed wafers on other bases to some of the bases includes:
  • the driving assembly is controlled to drive the upper flange to rotate, so that the transfer finger leaves the base.
  • annular sealing structure is provided in the semiconductor process chamber, and the annular sealing structure is arranged under the base and around the lifting shaft of the base to isolate the transmission chamber in partitions, so that The external space and the external environment outside the ring-shaped sealing structure are isolated from the space inside the ring-shaped sealing structure, so as to ensure the airtightness of the space below the base in the transmission cavity.
  • the base when the base descends to the transfer chamber, the base can press down the annular sealing structure to be compressed, thereby ensuring that the annular sealing structure will not affect the descending movement of the base; when the base rises to the reaction chamber, and When the pressure applied to the annular sealing structure is released, the annular sealing structure will elongate under the action of its own elastic force until it touches the bottom wall of the reaction chamber to close the bottom opening of the reaction chamber. At this time, the annular sealing structure can separate the reaction chamber from the reaction chamber. The external space outside the annular sealing structure in the transmission chamber is isolated, thereby improving the sealing effect of the reaction chamber and the pressure control effect of the reaction chamber, thereby improving the process effect of the semiconductor process.
  • the transmission chamber can also be located in the ring seal There is a strict isolation and sealing relationship between the manipulator and other devices in the external space outside the structure and the reaction chamber, so that the above-mentioned external space can be vacuumed while the semiconductor process is being carried out in the reaction chamber, without the need for semiconductor processes.
  • the transmission chamber is evacuated to the background vacuum again, which shortens the film transfer time, thereby improving the film formation efficiency of the semiconductor process and increasing the machine productivity.
  • the semiconductor process chamber provided by the present invention is especially suitable for multi-reaction chamber chambers, that is, there are multiple reaction chambers, and since each reaction chamber can be strictly sealed by an annular sealing structure, this can solve many problems in the prior art.
  • the air flow between each reaction zone interferes with each other, so that the film forming quality of the multi-reaction zone chamber can be improved.
  • Fig. 1 is a kind of structural representation of single process chamber in the existing multi-reaction zone chamber equipment
  • Fig. 2 is a schematic diagram of another state of the process chamber in Fig. 1;
  • Fig. 3 is a partially enlarged schematic view of the process chamber in Fig. 2;
  • FIG. 4 is a schematic structural diagram of a semiconductor process chamber provided by an embodiment of the present invention.
  • FIG. 5 is another structural schematic diagram of a semiconductor process chamber provided by an embodiment of the present invention.
  • FIG. 6 is a partially enlarged schematic view of the semiconductor process chamber in FIG. 5;
  • FIG. 7 is a schematic diagram of the relative positional relationship between the transfer manipulator and the bases of multiple process chambers in the semiconductor process equipment provided by the embodiment of the present invention.
  • FIG. 8 is a schematic structural view of a sealing ring and a first elastic sealing cylinder in a semiconductor process chamber provided by an embodiment of the present invention
  • FIG. 9 is a schematic flowchart of a semiconductor process method provided by an embodiment of the present invention.
  • FIG. 10 is a schematic flowchart of some steps in the semiconductor process method provided by the embodiment of the present invention.
  • FIG. 11 is a schematic flowchart of some steps in the semiconductor process method provided by the embodiment of the present invention.
  • Figures 1 to 3 are structural schematic diagrams of a single process chamber in an existing large-capacity multi-reaction zone chamber equipment, wherein Figure 1 is a state diagram when the base 4 is lowered to the position for picking and placing wafers, and Figure 2 is the reaction state in which the susceptor 4 is raised to close the opening of the partition 7 and seal the reaction zone (actually not completely sealed, see below).
  • the base 4 rises, and at this time, the substrate lifting pin 9 (pin) still stays in the original position under the action of gravity (the substrate lifting pin 9 There is a clearance between the holes in the base 4 that accommodate the substrate lift pins 9).
  • the substrate lifting pin 9 Until the upper end taper surface of the substrate lifting pin 9 contacts the base 4, at this moment the taper surface of the substrate lifting pin 9 has contacted the taper surface at the upper end of the base 4 hole.
  • the base 4 continues to rise, and the plane 14 of the base 4 contacts the lower end surface of the bellows 8, compressing the bellows 8, thereby achieving a sealing effect and separating the upper reaction zone from the lower transmission zone.
  • the upper reaction zone and the lower transfer zone can still communicate through the gap between the substrate lifting pin 9 and the hole, which not only affects the pressure control effect of the reaction zone, but also the gas in the reaction zone will flow under the wafer 13 and It flows into the gap between the substrate lifting pin 9 and the hole, and further enters the lower transfer area, where it reacts to form particles.
  • the process gas will also enter the space indicated by 22 from the slit 25, where thin films and particles are formed, and these particles will also fall on the upper surface of the wafer 13 to cause pollution during the descent of the base 4.
  • the base 4 needs to pass through the bellows 8, and the bellows has a corrugation width, the corrugation width of the bellows also needs to occupy some lateral space, thereby increasing the occupied area of the chamber.
  • a semiconductor process chamber is provided, as shown in FIG.
  • the bottom opening communicates with the transmission chamber 200, and a base 300 is provided in the semiconductor process chamber, and the bottom of the base 300 is connected with a lifting shaft 520 so as to pass through the bottom opening of the reaction chamber 100 between the reaction chamber 100 and the transmission chamber 200. up and down.
  • annular sealing structure 400 is also provided in the semiconductor process chamber, and the annular sealing structure 400 is disposed under the base 300 and surrounds the lifting shaft 520 of the base 300 for partitioning the transmission chamber 200
  • the isolation is to isolate the external space and the external environment outside the annular sealing structure 400 from the space inside the annular sealing structure, so as to ensure the airtightness of the space below the base in the transmission chamber 200 .
  • the base 300 When the base 300 descends to the transfer chamber 200, the base 300 can press down the annular sealing structure 400 to be compressed, thereby ensuring that the annular sealing structure will not affect the descending movement of the base; when the base 300 rises to the reaction chamber 100, and when the pressure on the annular sealing structure 400 is released, the annular sealing structure 400 will elongate under the action of its own elastic force until it touches the bottom wall of the reaction chamber 100 to close the bottom opening of the reaction chamber 100. At this time, the annular sealing structure 400 can isolate the reaction chamber 100 from the external space outside the annular sealing structure 400 in the transmission chamber 200, thereby improving the sealing effect of the reaction chamber, improving the pressure control effect of the reaction chamber, and further improving the semiconductor process.
  • the transfer chamber in the outer space outside the ring-shaped sealing structure, such as manipulators, and the reaction chamber have a strict isolation and sealing relationship, so that the semiconductor process can be carried out in the reaction chamber 100.
  • the above-mentioned external space is vacuumized, and there is no need to evacuate the transmission chamber to the background vacuum again in the film transfer step between semiconductor processes, which shortens the film transfer time, thereby improving the film formation efficiency of the semiconductor process and increasing the production capacity of the machine. .
  • the semiconductor process chamber provided by the present invention is especially suitable for multi-reaction chamber chambers, that is, there are multiple reaction chambers, and since each reaction chamber can be strictly sealed by an annular sealing structure, this can solve many problems in the prior art.
  • the air flow between each reaction zone interferes with each other, so that the film forming quality of the multi-reaction zone chamber can be improved.
  • the annular sealing structure 400 includes a sealing ring 410 and a first elastic sealing cylinder 420 .
  • the sealing ring 410 and the first elastic sealing cylinder 420 are both disposed below the base 300 and sleeved on the lifting shaft 520 of the base 300 , the top of the first elastic sealing cylinder 420 is in contact with the bottom wall of the sealing ring 410 Sealed connection, for example at the inner periphery of the sealing ring 410 .
  • the bottom end of the first elastic sealing cylinder 420 is in sealing connection with the bottom wall of the transmission chamber 200 .
  • the bottom end of the lifting shaft 520 passes through the through hole 250 at the bottom of the transmission chamber 200 and extends to the outside of the transmission chamber 200 ; the bottom end of the first elastic sealing cylinder 420 surrounds the through hole 250 for sealing the through hole 250 .
  • the first elastic sealing cylinder 420 Due to the elasticity of the first elastic sealing cylinder 420, it is in a compressed state when the base 300 is located in the transmission chamber 200, and when the base 300 rises to the reaction chamber 100 and the pressure on the first elastic sealing cylinder 420 is released , the first elastic sealing cylinder 420 can drive the sealing ring 410 to rise (ie, elongate) through its own elastic force.
  • the first elastic sealing cylinder 420 rises, the top wall of the sealing ring 410 can abut against the bottom wall of the reaction chamber 100 to close the bottom opening of the reaction chamber 100 .
  • the first elastic sealing cylinder 420 Under the action of its elastic force, the first elastic sealing cylinder 420 can press the sealing ring 410 against the bottom wall of the reaction chamber 100 so as to ensure the sealing effect.
  • the first elastic sealing cylinder 420 may be a bellows.
  • the first elastic sealing cylinder 420 can be raised by elastically driving the sealing ring 410.
  • the base 300 presses down the sealing ring 410 and compresses the first elastic sealing cylinder 420.
  • the base 300 rises and enters the reaction chamber 100 , and the first elastic sealing cylinder 420 pushes up the sealing ring 410 to seal the bottom opening of the reaction chamber 100 .
  • the first elastic sealing cylinder 420 divides the transmission cavity 200 into the internal space 210 of the sealing cylinder and the external space 220 of the sealing cylinder, and neither the sealing ring 410 nor the first elastic sealing cylinder 420 has any airtight defects (such as the lifting pin 9 and the gap between the hole in the base 4), so that the internal space 210 of the sealed cylinder can be isolated from the external space 220 of the sealed cylinder and the devices such as the manipulator in the external space 220 of the sealed cylinder, and then the process can be introduced into the reaction chamber 100.
  • the process gas in the reaction chamber 100 will not leak to the outer space 220 of the sealed cylinder due to the pressure difference between the reaction chamber 100 and the outer space 220 of the sealed cylinder, which improves the pressure control effect of the reaction chamber 100 .
  • the sealing ring 410 and the first elastic sealing cylinder 420 can isolate the reaction chamber 100 and the inner space 210 of the sealing cylinder from the outer space 220 of the sealing cylinder, thereby improving the sealing effect of the reaction chamber 100 and improving the safety of the reaction chamber 100.
  • the voltage control effect is improved, thereby improving the process effect of the semiconductor process.
  • the transfer chamber 200 needs to be vacuumized before each film transfer, but in the present invention, there is a strict isolation between the manipulator and other devices in the outer space 220 of the sealed cylinder and the reaction chamber 100 Sealing relationship, so that the semiconductor process can be carried out in the reaction chamber 100, and the outer space 220 of the sealed cylinder can be vacuumized, without the need to pump the transfer chamber 200 to the background vacuum again in the transfer step between the semiconductor processes, shortening
  • the film transfer time is shortened, which in turn improves the film formation efficiency of the semiconductor process and improves the production capacity of the machine.
  • the semiconductor process chamber structure provided by the present invention is especially suitable for multi-reaction zone chambers (that is, there are multiple reaction chambers 100 in the same semiconductor process chamber, and the multiple reaction chambers 100 communicate with the same transfer chamber 200 below), As shown in Figure 5, the sealing ring 410 and the first elastic sealing cylinder 420 can strictly seal the reaction chamber 100, thereby solving the problem of mutual interference of the air flow between the various reaction regions (reaction chambers) in the multi-reaction region chamber, and improving the efficiency of the reaction chamber. Film quality in multi-reaction zone chambers.
  • the semiconductor process chamber can be a CVD (Chemical Vapor Deposition, chemical vapor deposition) process chamber, or it can also be It is an ALD (Atomic Layer Deposition, atomic layer deposition) process chamber.
  • CVD Chemical Vapor Deposition, chemical vapor deposition
  • ALD Atomic Layer Deposition, atomic layer deposition
  • the outer diameter of the first elastic sealing cylinder 420 is smaller than the outer diameter of the base 300, so that the size of the chamber will not be increased, and the size of each process chamber will be reduced.
  • the floor area is small, which improves the utilization rate of the machine space.
  • the first The bottom end of the elastic sealing cylinder 420 has a connecting flange 421, and a first annular receiving groove 251 is formed around the through hole 250 on the bottom wall of the transmission chamber 200, the connecting flange 421 is arranged in the first annular receiving groove 251, and connected
  • a first sealing member 252 is arranged between the two opposite surfaces of the flange 421 and the first annular receiving groove 251, for sealing the gap between the two, so as to realize the sealing of the through hole 251, so that the transmission
  • the external space of the chamber 200 outside the annular sealing structure 400 and the external environment are isolated from the inner space of the annular sealing structure 400 .
  • the bottom end and the top end of the first elastic sealing cylinder 420 all have the above-mentioned connecting flanges 421, and the first elastic sealing cylinder 420 is preferably connected to the connecting flanges 421 at the bottom end and the top end respectively by welding.
  • the bottom end and the top end of the first elastic sealing cylinder 420 are fastened to other components through connecting flanges 421, so that while improving the connection strength at both ends of the first elastic sealing cylinder 420, it is also improved.
  • a first annular receiving groove 251 for accommodating the connecting flange 421 at the bottom end of the first elastic sealing cylinder 420 is formed on the bottom wall of the transmission chamber 200 , which improves the positioning accuracy of the horizontal position of the first elastic sealing cylinder 420 .
  • the base 300 may include support columns for lifting the wafer.
  • the base 300 has a plurality of base holes (greater than or equal to 3) distributed along the circumferential direction of the base 300 at intervals, and a plurality of support holes are arranged in a one-to-one correspondence.
  • the limiting structure is used to raise the base 300 until the top of the supporting column 310 is not higher than the bearing surface of the base 300 position, make the support column 310 rise together with the base 300; in the process of the base 300 descending, the support column 310 stops falling after its bottom end contacts the bottom wall of the transmission cavity 200, so that the top of the support column 310 can be raised
  • the annular sealing structure 400 surrounds the outer sides of the plurality of supporting columns 310 , that is, the plurality of supporting columns 310 are located in the space surrounded by the annular sealing structure 400 .
  • the above-mentioned limiting structure can have various structures.
  • the limiting structure is an inverted cone section (diameter gradually decreases from the top to the bottom) set on the top of the support column 310, and set on the base The reverse taper at the top of the hole that fits with the reverse taper segment.
  • the base 300 is at a low position, the bottom of the support column 310 is in contact with the bottom of the transfer chamber 200 , and the upper end of the support column 310 is higher than the upper end of the base, thereby leaving enough space for transferring wafers.
  • the base 300 rises, and the support column 310 does not rise due to gravity until the inverted cone section at the upper end of the support column 310 contacts the inverted cone surface of the base hole.
  • the support force of the inverted cone surface offsets the gravity of the support column 310 , and the support column 310 rises to the process position along with the base 300 .
  • the inner diameter of the first elastic sealing cylinder 109 is larger than the pitch circle where the base holes uniformly distributed in the circumferential direction of the base are located.
  • the sealing ring 410 includes a concave disc 411 and a concave disc flange 412
  • the concave flange 412 is arranged around the concave disk 411 and is fixedly connected with the outer edge of the concave disk 411 for contacting the bottom wall of the reaction chamber 100.
  • the concave disk 411 has a receiving groove 414 on the side facing the reaction chamber 100.
  • the base 300 is accommodated when the base 300 descends to the bottom of the reaction chamber 100 .
  • An inner hole 415 of the sealing ring 410 is formed in the center of the receiving groove 414 of the sealing ring 410 .
  • the surface of the sealing ring 410 has a receiving groove 414 corresponding to the position and size of the base 300 (projection on the horizontal plane).
  • the base 300 descends, it first falls into the receiving groove 414, and then Press down the bottom surface of the receiving groove 414, so that both the sealing ring 410 and the first elastic sealing cylinder 420 are pressed down; similarly, before the base 300 rises to enter the reaction chamber 100, the sealing ring 410 is placed on the first elastic sealing cylinder 420.
  • the depth of the receiving groove 414 on the sealing ring 410 is smaller than the thickness of the heating plate at the bottom of the base 300 .
  • the second annular accommodation groove 130 is used for accommodating the concave disc flange 412 .
  • a second seal 131 is arranged between the opposite surfaces of the recessed flange 412 and the second annular receiving groove 130 to seal the gap between the two, so that the top wall of the seal ring 410 can be in contact with the When the bottom walls of the reaction chamber 100 touch each other, the bottom opening of the reaction chamber 100 can be closed.
  • the bottom wall of the reaction chamber 100 has the above-mentioned second annular accommodation groove 130.
  • the concave flange 412 enters the second annular accommodation groove 130 vertically, thereby passing through the concave flange.
  • the cooperation relationship between 412 and the second annular receiving groove 130 further limits the degree of freedom of the sealing ring 410 in the horizontal direction, so that the sealing ring 410 can only move relative to the reaction chamber 100 in the up and down direction, further ensuring that the sealing ring 410 and the first The sealing effect of an elastic sealing cylinder 420 on the reaction chamber 100 .
  • the distance between the bottom surface of the transmission cavity 200 and the bottom surface of the second annular receiving groove 130 must be smaller than the free length of the first elastic sealing cylinder 109, that is, the first elastic sealing cylinder 109 must always be in a compressed state to ensure Sealing effect.
  • the top of the recessed flange 412 A protruding structure 413 extending circumferentially around the concave disc 411 is formed on the surface, and a groove structure corresponding to the position and shape (projected on the horizontal plane) is formed on the bottom surface of the second annular accommodation groove 130, thereby extending the concave disc method.
  • the width of the gap between the flange 412 and the second annular receiving groove 130 further improves the airtightness of the bottom opening of the reaction chamber 100 sealed by the recessed flange 412 .
  • the embodiment of the present invention does not specifically limit the outer contour shape of the concave flange 412 and the second annular accommodation groove 130 and the pattern shape of the raised structure 413, for example, the outer contour of the concave disk flange 412 and the second annular accommodation groove 130
  • the shape and the pattern of the protruding structure 413 may be triangular (or approximately triangular), square (or approximately square), or a regular polygon (or approximately regular polygon) with more sides.
  • the outer contour shape of the concave flange 412 and the second annular receiving groove 130 and the pattern shape of the raised structure 413 are all circular, so that the distance between the concave flange 412 and the second annular receiving groove 130 can be improved. Uniformity of force, and no angular alignment between the concave flange 412 and the second annular receiving groove 130 , which simplifies the equipment structure and improves the equipment assembly efficiency.
  • the embodiment of the present invention does not specifically limit how to drive the base 300 up and down.
  • the lifting drive assembly 510 may include a guide rail-slider device, the guide rail extends vertically and is fixed on the bottom of the process chamber, and the slider is movably arranged on the guide rail and connected to the bottom end of the lifting shaft 520 Fixedly connected, the slide block vertically reciprocates on the guide rail to drive the lifting shaft 520 and the base 300 connected to the top of the lifting shaft 520 to move up and down.
  • the semiconductor process chamber also includes a purging device (not shown), as shown in FIG. As shown in FIG. 4 , the purge device is used to pass the purge gas a into the first elastic sealing cylinder 420 through the through hole 250 at the bottom of the transmission chamber 200 .
  • the purge device can pass the purge gas a into the first elastic sealing cylinder 420 through the through hole 250 at the bottom of the transmission chamber 200 during the semiconductor process, so as to ensure that the gas in the space below the base 300 is kept clean.
  • the pressure is higher than the pressure of the process gas in the reaction zone, thereby preventing the process gas from entering the space below the base 300 and forming films and particles (the space between the first elastic sealing cylinder 420, the sealing ring 410 and the base 300 has no dead zone, and the air flow is formed by flow from bottom to top), ensuring the cleanliness of the surface of the structure under the base 300.
  • the process gas will not enter the lower space of the susceptor 300 filled with the purge gas a, thereby reducing the area that the process gas needs to fill, that is, reducing the volume of the reaction area, and increasing the amount of process gas that enters the reaction zone.
  • the concentration of the process gas after the region thereby increasing the film formation rate of the semiconductor process.
  • the bottom end of the second elastic sealing cylinder 530 is sealingly connected with the bottom end of the lifting shaft 520, the purging device is connected with the bottom end of the second elastic sealing cylinder 530, and passes through the second The elastic sealing cylinder 530 passes the purge gas a into the through hole 250 at the bottom of the transmission chamber 200 .
  • an exhaust passage 110 is provided on the outside of the reaction chamber 100, and an exhaust hole is formed on the side wall of the reaction chamber 100, and the reaction chamber 100 is exhausted through The air hole communicates with the exhaust channel 110 , and the height of the air hole is higher than the process position of the base 300 .
  • an exhaust passage 110 is provided on the outside of the reaction chamber 100, and the exhaust passage 110 communicates with the reaction chamber 100 through an exhaust hole, and is connected with an external vacuum pump through a first vacuum port 120, so that the reaction chamber In 100, the reaction waste gas and the purge gas a entering the reaction area are extracted (the gas flow direction is shown in the direction of the arrow in FIG. 4 ).
  • the exhaust passage 110 is arranged around the reaction chamber 100 in the horizontal direction , a plurality of exhaust holes are formed on the side wall of the reaction chamber 100, and the plurality of exhaust holes are uniformly distributed in the circumferential direction.
  • a second vacuum port 230 is also formed on the bottom wall of the transfer chamber 200, and the transfer chamber 200 is connected to an external vacuum pump through the second vacuum port 230 , so that the outer space 220 of the sealed cylinder can be evacuated when the semiconductor process is performed in the reaction chamber 100 .
  • the semiconductor process chamber includes a plurality of reaction chambers 100, and each reaction chamber 100 communicates with the transfer chamber 200 through the bottom opening, and the transfer chamber 200 is provided with There is a transfer manipulator 600 for transferring wafers between corresponding susceptors 300 of different reaction chambers 100 .
  • each reaction chamber 100 can be strictly sealed by the sealing ring 410 and the first elastic sealing cylinder 420, thereby solving the problem of mutual interference of airflow between different reaction chambers 100 and improving the performance of each reaction chamber 100.
  • the film-forming quality (verified by the inventor's experiments, the transfer chamber 200 is evacuated and detects the pressure in the transfer chamber 200, the pressure rise rate value of the gas pressure in the transfer chamber 200 is very small (less than 5mtorr/min), that is, effectively improved sealing effect between the transfer chamber 200 and the reaction chamber 100).
  • the transfer manipulator 600 can transfer wafers between the bases 300 of different process chambers, so that the external manipulator can only move from the transfer port 240 of the transfer chamber 200 to some of the bases 300 in the transfer chamber 200 Place the wafer or take away the wafer from the part of the base 300 (wafer pick-and-place operation), which simplifies the positioning and transmission of the base 300 in different positions after the external manipulator reaches into the transfer chamber 200, and improves the efficiency of the wafer. Stability of the circle position.
  • a manipulator through hole is formed on the bottom wall of the transfer chamber 200 (multiple reaction chambers 100 share one transfer chamber 200), the transfer manipulator 600 includes a drive assembly and an upper end flange 62, and the top end of the output shaft of the drive assembly passes through the manipulator passage.
  • the hole is fixedly connected with the upper end flange 62.
  • a plurality of bases 300 corresponding to a plurality of reaction chambers 100 are arranged around the transfer manipulator 600, and transfer fingers 61 (including a first transfer finger 611, a second transfer finger 612, a third transfer finger 613 and a second transfer finger 613) are fixedly arranged on the upper end flange 62.
  • the driving assembly is used to drive the upper end flange 62 and the transmission fingers 61 fixed on it to perform lifting action and (around the axis of the output shaft) rotation, so that the transmission fingers 61 will part of the crystal on the base 300
  • the circle is removed and the wafer is placed on other susceptors 300 .
  • the semiconductor process chamber includes four bases 300 corresponding to four reaction chambers 100 (including a first base 71, a second base 72, a third base Seat 73, fourth base 74) are arranged at equal intervals around the circumference of the transfer manipulator 600.
  • the external manipulator only performs wafer pick-and-place operations on two bases 300 (such as the first base 71 and the fourth base 74), and the transfer manipulator 600 transfers wafers to the other two bases.
  • the wafers are transferred on the seats 300 (eg, the second pedestal 74 and the third pedestal 73 ).
  • the four pedestals 300 are all in the low position.
  • the wafer 700 is transferred from the outside of the process chamber to the top of the first pedestal 71 and the second pedestal 74 through the transfer port 240, and falls to the plurality of supporting columns 310 corresponding to the first pedestal 71 and the second pedestal 74 respectively. of the upper end.
  • the driving assembly of the transfer manipulator 600 drives the upper flange 62 to rise to a predetermined height and rotate clockwise until the first finger 611 and the second finger 612 respectively rotate under the fourth base 74 and the wafer 700 carried by the first base 71 .
  • the driving assembly of the transfer manipulator 600 drives the upper flange 62 to rise again, so that the first finger 611 and the second finger 612 hold up the wafer 700 on the first base 71 and the second base 74 respectively.
  • the upper flange 62 is driven to rotate clockwise by 180°, so that the first finger 611 and the second finger 612 are rotated to be located above the second base 72 and the third base 73 respectively.
  • the transfer manipulator 600 rotates counterclockwise at a certain angle and is hidden in the space between the bases 300 .
  • the first elastic sealing cylinder 109 elongates under the action of its own elastic force to lift the sealing ring 410 until the concave flange 412 of the sealing ring 410 enters the second annular receiving groove 130 of the reaction chamber 100 .
  • the pedestal 300 is further raised to the process position and separated from the sealing ring 410 , and the pedestal 300 continues to rise to the required process position.
  • the purge assembly is blown into the purge gas a through the through hole 250 at the bottom of the transfer chamber 200, while the transfer chamber 200 is exhausted through the second vacuum port 230, and the vacuum pump is drawn through the first vacuum port 120
  • the gas in the reaction area ensures that the pressure below the base 300 is higher than the pressure above the base 300, and the process gas will not enter the transmission chamber during the process, thereby eliminating the source of particles.
  • the lifting drive assembly 510 drives the base 300 down to a lower position, and the wafer 700 is lifted by the support column 310 and detached from the upper surface of the base 300 to prepare for taking out the wafer.
  • the wafer 700 on the first base 71 and the fourth base 74 is removed and transported out of the process chamber through the transfer port 240 .
  • the driving assembly drives the upper flange 62 to rotate clockwise until the two fingers 61 are rotated below the wafer 700 above the second base 72 and the third base 73, and the driving assembly drives the upper flange 62 to drive the two fingers 61
  • the wafer 700 above the second pedestal 72 and the third pedestal 73 is lifted up and held up respectively.
  • the above steps are performed cyclically, so that the wafers are grouped (in the case that the semiconductor process chamber includes four reaction chambers 100 , four wafers form a group) and processed to achieve high-efficiency production.
  • a semiconductor process equipment including the above-mentioned semiconductor process chamber.
  • the semiconductor process equipment provided in this embodiment can obtain various advantages of the above-mentioned semiconductor process chamber, which will not be repeated here.
  • a semiconductor processing method is provided, and the semiconductor processing method is applied to the semiconductor processing chamber provided in the embodiment of the present invention. As shown in FIG. 9, the method includes:
  • Step S1 placing the pre-process wafer 700 on the base 300 located in the transfer chamber 200;
  • Step S2 controlling the rise of the base 300 to the reaction chamber 100, during which the annular sealing structure 400 seals the bottom opening of the process chamber 100;
  • Step S3 performing a semiconductor process
  • Step S4 controlling the base 300 to descend to the transmission chamber 200;
  • Step S5 removing the processed wafer 700 on the base 300 .
  • the annular sealing structure 400 (such as including the sealing ring 410 and the first elastic sealing cylinder 420) can isolate the reaction chamber 100 and the inner space 210 of the sealing cylinder from the outer space 220 of the sealing cylinder, thereby improving the sealing of the reaction chamber 100 As a result, the pressure control effect of the reaction chamber 100 is improved, thereby improving the process effect of the semiconductor process.
  • the transfer chamber 200 needs to be evacuated before each film transfer, but in the present invention, there is a strict gap between the manipulator and other devices in the outer space 220 of the sealed cylinder and the reaction chamber 100.
  • the sealing relationship is isolated, so that the outer space 220 of the sealed cylinder can be evacuated while the semiconductor process is being carried out in the reaction chamber 100, and there is no need to evacuate the transfer chamber 200 to the background vacuum again in the transfer step between the semiconductor processes.
  • the film transfer time is shortened, which in turn improves the film forming efficiency of the semiconductor process and improves the machine productivity.
  • the semiconductor process chamber structure provided by the present invention is especially suitable for multi-reaction zone chambers (that is, there are multiple reaction chambers 100 in the same semiconductor process chamber, and the multiple reaction chambers 100 communicate with the same transfer chamber 200 below), As shown in FIG.
  • the annular sealing structure 400 (for example, including a sealing ring 410 and a first elastic sealing cylinder 420) can strictly seal the reaction chamber 100, thereby solving the problem of each reaction zone (reaction chamber 100) in the multi-reaction zone chamber.
  • the mutual interference of the airflow between them can improve the film forming quality of the multi-reaction zone chamber.
  • the semiconductor process chamber also includes a purging device (not shown), as shown in FIG. As shown in FIG. 4 , the purge device is used to pass the purge gas a into the first elastic sealing cylinder 420 through the through hole 250 at the bottom of the transmission chamber 200 .
  • Step S3 also includes, when performing the semiconductor process, controlling the purge device to pass the purge gas a into the first elastic sealing cylinder 420 .
  • the purge device can pass the purge gas a into the first elastic sealing cylinder 420 through the through hole 250 at the bottom of the transmission chamber 200 during the semiconductor process, so as to ensure that the gas in the space below the base 300 is kept clean.
  • the pressure is higher than the pressure of the process gas in the reaction zone, thereby preventing the process gas from entering the space below the base 300 and forming films and particles (the space between the first elastic sealing cylinder 420, the sealing ring 410 and the base 300 has no dead zone, and the air flow is formed by flow from bottom to top), ensuring the cleanliness of the surface of the structure under the base 300.
  • the process gas will not enter the lower space of the susceptor 300 filled with the purge gas a, thereby reducing the area that the process gas needs to fill, that is, reducing the volume of the reaction area, and increasing the amount of process gas that enters the reaction zone.
  • the concentration of the process gas after the region thereby increasing the film formation rate of the semiconductor process.
  • the semiconductor process chamber includes multiple A reaction chamber 100, the transfer chamber 200 is provided with a transfer manipulator 600 for transferring the wafer 700 between the bases 300 corresponding to different reaction chambers 100;
  • the step S1 of placing the pre-process wafer 700 on the base 300 includes:
  • Step S11 placing the pre-process wafer 700 on part of the base 300;
  • Step S12 controlling the transfer manipulator 600 to transfer the pre-process wafer 700 on some bases 300 to other bases 300;
  • Step S13 placing the pre-process wafer 700 on part of the base 300 again.
  • the step S5 of taking off the post-process wafer 700 on the base 300 includes:
  • Step S51 removing part of the processed wafer 700 on the base 300;
  • Step S52 controlling the transfer manipulator 600 to transfer the processed wafer 700 on other bases 300 to some bases 300;
  • Step S53 removing part of the processed wafer 700 on the base 300 again.
  • a manipulator through hole is formed on the bottom wall of the transfer chamber 200 , the transfer manipulator 600 includes a drive assembly and an upper end flange 62 , and the top end of the output shaft of the drive assembly passes through the manipulator through hole and is fixedly connected to the upper end flange 62 .
  • a plurality of bases 300 corresponding to a plurality of reaction chambers 100 are arranged around the transfer manipulator 600, and transfer fingers 6161 (including the first transfer finger 611, the second transfer finger 612, the third transfer finger 613 and the Four transmission fingers 614), the driving assembly is used to drive the upper end flange 62 and the transmission fingers 61 fixed on it to perform lifting action and (around the axis of the output shaft) rotation, so that the transmission fingers 61 will part of the crystal on the base 300
  • the circle 700 is removed, and the wafer 700 is placed on other susceptors 300 .
  • the step S12 of controlling the transfer manipulator 600 to transfer the pre-process wafer 700 on some bases 300 to other bases 300 includes:
  • Step S121 controlling the drive assembly to drive the upper flange 62 to rise or fall, so that the height of the transfer finger 61 rises or falls between the pre-process wafer 700 and the supporting surface of the base 300;
  • Step S122 control the driving assembly to drive the upper flange 62 to rotate, so that at least part of the transfer fingers 61 rotate to part of the base 300 (for example, in the case of the semiconductor process chamber shown in FIG. 7 including four reaction chambers 100, part of the base Seat 300 can be below the pre-process wafer 700 on the first pedestal 71 and the fourth pedestal 74), and control the driving assembly to drive the upper end flange 62 to rise, so that the transfer finger 61 can remove part of the pedestal 300 (first pre-process wafer 700 on the base 71 and the fourth base 74);
  • Step S123 control the driving assembly to drive the upper flange 62 to rotate, so that the pre-process wafer 700 carried on the transfer finger 61 is rotated to be located above the other bases 300 (the second base 74 and the third base 73), and control the drive The component drives the upper end flange 62 to descend, so that the transfer finger 61 places the pre-process wafer 700 on other bases 300;
  • Step S124 controlling the driving assembly to drive the upper flange 62 to rotate, so that the transport finger 61 leaves the base 300 .
  • the step S52 of controlling the transfer manipulator 600 to transfer the processed wafer 700 on other bases 300 to some bases 300 includes:
  • Step S521 controlling the drive assembly to drive the upper flange 62 to rise or fall, so that the height of the transfer finger 61 rises or falls between the pre-process wafer 700 and the supporting surface of the base 300;
  • Step S522 control the driving assembly to drive the upper flange 62 to rotate, so that at least part of the transfer fingers 61 are rotated to the bottom of the pre-process wafer 700 on the other bases 300 (the second base 74 and the third base 73), and control the drive The component drives the upper end flange 62 to rise, so that the transfer finger 61 removes the pre-process wafer 700 on other bases 300;
  • Step S523 control the drive assembly to drive the upper flange 62 to rotate, so that the pre-process wafer 700 carried on the transfer finger 61 is rotated to be located above the part of the base 300 (the first base 71 and the fourth base 74), and control the drive The component drives the upper end flange 62 to descend, so that the transfer finger 61 places the pre-process wafer 700 on the part of the base 300;
  • Step S524 controlling the driving assembly to drive the upper flange 62 to rotate, so that the transport finger 61 leaves the base 300 .

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Abstract

提供了一种半导体工艺腔室、半导体工艺设备和半导体工艺方法，腔室包括反应腔（100）和位于反应腔（100）下方的传输腔（200），反应腔（100）通过底部开口与传输腔（200）连通，半导体工艺腔室中设置有基座（300），基座（300）的底部连接有升降轴（520），以能够通过底部开口在反应腔（100）与传输腔（200）之间升降，具有弹性的环形密封结构（400）设置于基座（300）的下方且环绕在基座（300）的升降轴（520）周围，在基座（300）下降至传输腔（200）的过程中，基座（300）能够下压环形密封结构（400）使之被压缩；在基座（300）上升至反应腔（100）并解除施加在环形密封结构（400）上的压力时，环形密封结构（400）在自身弹力的作用下伸长，直至与反应腔（100）的底壁相抵，以封闭底部开口。改善反应腔（100）的控压效果，提高工艺效果，并缩短传片时间，提高半导体工艺的成膜效率。

Description

半导体工艺腔室、半导体工艺设备和半导体工艺方法 技术领域
本发明涉及半导体工艺设备领域，具体地，涉及一种半导体工艺腔室、一种包括该半导体工艺腔室的半导体工艺设备和应用于该半导体工艺设备上的半导体工艺方法。
背景技术
随着电子产品的普及与更新换代以及国际形势的推动，半导体行业发展迅速，其中超大规模集成电路的进展尤为突出。各代工厂急需最优的扩产方案，即产能与占地面积比值最大化。现阶段提高产能的方案主要有以下两种：一、提高成膜速率，即提高单位时间内成膜衬底数量；二、增加同时成膜的衬底数量。
然而，采用现有的单晶圆加工腔室增加产能可提高成膜速率，但提高成膜速率提高产量有限。与之相比，大产能多反应区腔室设备优势明显，其关键技术为各个反应区的独立性，即通过隔离密封结构进行隔离以实现各个反应区的独立性，以化学气相沉积(Chemical Vapor Deposition，CVD)和原子层沉积(atomic layer deposition，ALD)工艺设备为例，隔离密封结构可保证各个反应区的气流场稳定、均匀，进一步保证成膜的稳定性、均匀性。但是，受到大产能多反应区腔室设备自身的传片结构的限制，导致各个反应区之间相互连通，传输腔的内部空间较大且气流无规律，不能保证气流平稳及均匀，进一步导致工艺过程中控压不稳定，最终影响成膜质量。
发明内容
本发明旨在提供一种半导体工艺腔室、一种半导体工艺设备和一种半导体工艺方法，该半导体工艺腔室能够改善反应腔的控压效果，提高半导体工艺的工艺效果，并缩短传片时间，提高半导体工艺的成膜效率。
为实现上述目的，作为本发明的一个方面，提供一种半导体工艺腔室，包括反应腔和位于所述反应腔下方的传输腔，所述反应腔通过底部开口与所述传输腔连通，所述半导体工艺腔室中设置有基座，所述基座的底部连接有升降轴，以能够通过所述底部开口在所述反应腔与所述传输腔之间升降，其特征在于，所述半导体工艺腔室中还设置有具有弹性的环形密封结构，所述环形密封结构设置于所述基座的下方且环绕在所述基座的升降轴周围，在所述基座下降至所述传输腔的过程中，所述基座能够下压所述环形密封结构使之被压缩；在所述基座上升至所述反应腔，并解除施加在所述环形密封结构上的压力时，所述环形密封结构在自身弹力的作用下伸长，直至与所述反应腔的底壁相抵，以封闭所述底部开口。
可选地，所述环形密封结构包括密封环和第一弹性密封筒，其中，所述第一弹性密封筒的顶端与所述密封环的底壁密封连接，所述第一弹性密封筒的底端与所述传输腔的底壁密封连接；在所述第一弹性密封筒伸长时，所述密封环的顶壁能够与所述反应腔的底壁相抵，以封闭所述底部开口；
所述升降轴的底端穿过设置在所述传输腔底部的通孔，延伸至所述传输腔的外部；所述第一弹性密封筒的底端环绕在所述通孔周围，用于密封所述通孔。
可选地，所述第一弹性密封筒为波纹管。
可选地，所述第一弹性密封筒的底端具有连接法兰，所述传输腔的底壁上环绕所述通孔形成有第一环形容纳槽，所述连接法兰设置在所述第一环形容纳槽中，且所述连接法兰与所述第一环形容纳槽彼此相对的两个表面之间设置有第一密封件。
可选地，所述密封环包括凹盘和凹盘法兰，所述凹盘法兰环绕所述凹盘设置且与所述凹盘的外沿固定连接，所述凹盘法兰用于与所述反应腔的底壁接触，所述凹盘朝向所述反应腔的一侧具有容纳凹槽，用于在所述基座下降时容纳所述基座。
可选地，所述反应腔的底壁具有环绕所述底部开口的第二环形容纳槽，所述第二环形容纳槽用于容纳所述凹盘法兰，且所述凹盘法兰与所述第二环形容纳槽彼此相对的两个表面之间设置有第二密封件。
可选地，所述基座具有沿所述基座的周向间隔分布的多个基座孔，多个所述基座孔中一一对应地设置有多个支撑柱，且在每个所述基座孔与对应的所述支撑柱之间形成有限位结构，所述限位结构用于在基座上升至所述支撑柱的顶端不高于所述基座的承载面的位置时，使所述支撑柱随所述基座一同上升；
在所述基座下降的过程中，所述支撑柱在其底端与所述传输腔的底壁接触后停止下降，以使所述支撑柱的顶端能够高于所述基座的承载面；
所述环形密封结构环绕于多个所述支撑柱的外侧。
可选地，所述反应腔为多个，各所述反应腔均具有所述底部开口，所述基座的数量与所述反应腔的数量相同，且一一对应地设置；所述传输腔中设置有传输机械手，用于在不同所述反应腔对应的所述基座之间转移晶圆。
可选地，多个所述反应腔环绕所述传输机械手设置；
所述传输机械手包括驱动组件、上端法兰以及固定设置在所述上端法兰上的传输手指，所述驱动组件用于驱动所述上端法兰及其上固定的所述传输手指作升降动作和旋转动作，以使所述传输手指将部分所述基座上的晶圆取下，并将所述晶圆放置在其他所述基座上。
可选地，所述半导体工艺腔室还包括吹扫装置，所述吹扫装置用于通过所述传输腔底部的通孔向第一弹性密封筒中通入吹扫气体。
作为本发明的第二个方面，提供一种半导体工艺设备，包括上述任一半导体工艺腔室。
作为本发明的第三个方面，提供一种半导体工艺方法，所述半导体工艺方法应用于前面所述的半导体工艺设备，所述方法包括：
向位于所述传输腔中的所述基座上放置工艺前晶圆；
控制所述基座上升至所述反应腔，在此过程中，所述环形密封结构封闭所述底部开口；
进行半导体工艺；
控制所述基座下降至所述传输腔；
取下所述基座上的工艺后晶圆。
可选地，所述反应腔为多个，各所述反应腔均具有所述底部开口，所述基座的数量与所述反应腔的数量相同，且一一对应地设置；所述传输腔中设置有传输机械手，用于在不同所述反应腔对应的所述基座之间转移晶圆；
所述向所述基座上放置工艺前晶圆，包括：
向部分所述基座上放置工艺前晶圆；
控制所述传输机械手将部分所述基座上的工艺前晶圆转移至其他所述基座上；
再次向部分所述基座上放置工艺前晶圆；
所述取下所述基座上的工艺后晶圆，包括：
取下部分所述基座上的工艺后晶圆；
控制所述传输机械手将其他所述基座上的工艺后晶圆转移至部分所述基座上；
再次取下部分所述基座上的工艺后晶圆。
可选地，多个所述反应腔环绕所述传输机械手设置；所述传输机械手包括驱动组件、上端法兰以及固定设置在所述上端法兰上的传输手指，所述驱 动组件用于驱动所述上端法兰及其上固定的所述传输手指作升降动作和旋转动作，以使所述传输手指将部分所述基座上的晶圆取下，并将所述晶圆放置在其他所述基座上；
所述控制所述传输机械手将部分所述基座上的工艺前晶圆转移至其他基座上，包括：
控制所述驱动组件驱动所述上端法兰上升或下降，使所述传输手指的高度上升或下降至所述工艺前晶圆与所述基座的承载面之间；
控制所述驱动组件驱动所述上端法兰旋转，使至少部分所述传输手指旋转至部分所述基座上的工艺前晶圆下方，并控制所述驱动组件驱动所述上端法兰升高，使所述传输手指取下部分所述基座上的工艺前晶圆；
控制所述驱动组件驱动所述上端法兰旋转，使所述传输手指上承载的工艺前晶圆旋转至位于其他所述基座上方，并控制所述驱动组件驱动所述上端法兰下降，使所述传输手指将所述工艺前晶圆放置在其他所述基座上；
控制所述驱动组件驱动所述上端法兰旋转，使所述传输手指离开所述基座；
所述控制所述传输机械手将其他所述基座上的工艺后晶圆转移至部分所述基座上包括：
控制所述驱动组件驱动所述上端法兰上升或下降，使所述传输手指的高度上升或下降至所述工艺前晶圆与所述基座的承载面之间；
控制所述驱动组件驱动所述上端法兰旋转，使至少部分所述传输手指旋转至其他所述基座上的工艺前晶圆下方，并控制所述驱动组件驱动所述上端法兰升高，使所述传输手指取下其他所述基座上的工艺前晶圆；
控制所述驱动组件驱动所述上端法兰旋转，使所述传输手指上承载的工艺前晶圆旋转至位于部分所述基座上方，并控制所述驱动组件驱动所述上端法兰下降，使所述传输手指将所述工艺前晶圆放置在部分所述基座上；
控制所述驱动组件驱动所述上端法兰旋转，使所述传输手指离开所述基座。
在本发明中，通过在半导体工艺腔室中设置具有弹性的环形密封结构，该环形密封结构设置于基座的下方且环绕在基座的升降轴周围，用于将传输腔进行分区隔离，使位于环形密封结构外侧的外部空间及外界环境与环形密封结构内侧的空间隔离，从而保证传输腔中基座下方的空间的密封性。并且，在基座下降至传输腔的过程中，基座能够下压环形密封结构使之被压缩，从而可以保证环形密封结构不会影响基座的下降运动；在基座上升至反应腔，并解除施加在环形密封结构上的压力时，环形密封结构在自身弹力的作用下伸长，直至与反应腔的底壁相抵，以封闭反应腔的底部开口，此时环形密封结构能够将反应腔与传输腔中位于环形密封结构外侧的外部空间隔离，从而提高了反应腔的密封效果，改善了反应腔的控压效果，进而提高了半导体工艺的工艺效果，同时，还可以使传输腔位于环形密封结构外侧的外部空间中的机械手等装置与反应腔之间为严格的隔离密封关系，从而可以在反应腔中进行半导体工艺的同时，对上述外部空间进行抽真空处理，无需在半导体工艺之间的传片步骤中再次将传输腔抽至本底真空，缩短了传片时间，进而提高了半导体工艺的成膜效率，提高了机台产能。此外，本发明提供的半导体工艺腔室，尤其适用于多反应区腔室，即反应腔有多个，由于各个反应腔之间可以通过环形密封结构进行严格密封，这可以解决现有技术中多反应区腔室中各个反应区之间的气流相互干扰问题，从而可以提高多反应区腔室的成膜质量。
附图说明
附图是用来提供对本发明的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本发明，但并不构成对本发明的限制。在附图中：
图1是一种现有的多反应区腔室设备中单个工艺腔室的结构示意图；
图2是图1中工艺腔室另一种状态的示意图；
图3是图2中工艺腔室的局部放大示意图；
图4是本发明实施例提供的半导体工艺腔室的结构示意图；
图5是本发明实施例提供的半导体工艺腔室的另一结构示意图；
图6是图5中半导体工艺腔室的局部放大示意图；
图7是本发明实施例提供的半导体工艺设备中传输机械手与多个工艺腔室的基座之间的相对位置关系示意图；
图8是本发明实施例提供的半导体工艺腔室中密封环与第一弹性密封筒的结构示意图；
图9是本发明实施例提供的半导体工艺方法的流程示意图；
图10是本发明实施例提供的半导体工艺方法中部分步骤的流程示意图；
图11是本发明实施例提供的半导体工艺方法中部分步骤的流程示意图。
具体实施方式
以下结合附图对本发明的具体实施方式进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。
如图1至图3为一种现有的大产能多反应区腔室设备中单个工艺腔室的结构示意图，其中图1为基座4下降至取放晶圆位置时的状态图，图2为基座4升高至封闭隔板7的开口并使反应区密封(实际未完全密封，参见下文)的反应状态。
如图1和图2所示，在向基板升降销9上加载晶圆13后，基座4上升，此时基板升降销9(pin)在重力的作用下仍然停留在原位置(基板升降销9与基座4中容纳基板升降销9的孔之间存在间隙)。直到基板升降销9的上端锥面与基座4接触，此时基板升降销9的锥面已与基座4孔上端的锥面接触。基座4继续上升，基座4的平面14与波纹管8的下端面接触，压缩波纹 管8，从而起到密封效果，将上部反应区与下部传输区隔开。
然而实际上，上部反应区与下部传输区之间还能通过基板升降销9与孔之间的间隙连通，不仅影响反应区的控压效果，反应区的气体还会流经晶圆13下方并流动至基板升降销9与孔之间的间隙中，进一步进入到下部传输区，在传输区内反应形成颗粒。在基座4下降或传片时，颗粒会落到晶圆13上表面造成污染。工艺过程中，工艺气体也会从25处缝隙进入到22所指的空间，在此形成薄膜和颗粒，在基座4下降过程中，这些颗粒也会落在晶圆13上表面造成污染。并且，由于基座4需要穿过波纹管8，而波纹管存在波纹宽度，因此波纹管波纹宽度也需要占用一些横向空间，从而增加了腔室的占地面积。
为解决上述技术问题，作为本发明的一个方面，提供一种半导体工艺腔室，如图4所示，该半导体工艺腔室包括反应腔100和位于反应腔100下方的传输腔200，反应腔100通过底部开口与传输腔200连通，半导体工艺腔室中设置有基座300，该基座300的底部连接有升降轴520，以能够通过反应腔100的底部开口在反应腔100与传输腔200之间升降。而且，半导体工艺腔室中还设置有具有弹性的环形密封结构400，该环形密封结构400设置于基座300的下方且环绕在基座300的升降轴520周围，用于将传输腔200进行分区隔离，使位于环形密封结构400外侧的外部空间及外界环境与环形密封结构内侧的空间隔离，从而保证传输腔200中基座下方的空间的密封性。
在基座300下降至传输腔200的过程中，基座300能够下压环形密封结构400使之被压缩，从而可以保证环形密封结构不会影响基座的下降运动；在基座300上升至反应腔100，并解除施加在环形密封结构400上的压力时，环形密封结构400在自身弹力的作用下伸长，直至与反应腔100的底壁相抵，以封闭反应腔100的底部开口。此时环形密封结构400能够将反应腔100与传输腔200中位于环形密封结构400外侧的外部空间隔离，从而提高了反应腔的密封效果，改善了反应腔的控压效果，进而提高了半导体工艺的工艺效 果，同时，还可以使传输腔位于环形密封结构外侧的外部空间中的机械手等装置与反应腔之间为严格的隔离密封关系，从而可以在反应腔100中进行半导体工艺的同时，对上述外部空间进行抽真空处理，无需在半导体工艺之间的传片步骤中再次将传输腔抽至本底真空，缩短了传片时间，进而提高了半导体工艺的成膜效率，提高了机台产能。
此外，本发明提供的半导体工艺腔室，尤其适用于多反应区腔室，即反应腔有多个，由于各个反应腔之间可以通过环形密封结构进行严格密封，这可以解决现有技术中多反应区腔室中各个反应区之间的气流相互干扰问题，从而可以提高多反应区腔室的成膜质量。
上述环形密封结构400的结构可以有多种，例如，环形密封结构400包括密封环410和第一弹性密封筒420。其中，密封环410和第一弹性密封筒420均设置于基座300的下方且套设在基座300的升降轴520上，第一弹性密封筒420的顶端与所述密封环410的底壁密封连接，连接位置例如在密封环410的内周缘处。第一弹性密封筒420的底端与传输腔200的底壁密封连接。升降轴520的底端穿过设置在传输腔200底部的通孔250，延伸至传输腔200的外部；第一弹性密封筒420的底端环绕在通孔250周围，用于密封通孔250。
由于第一弹性密封筒420具有弹性，其在基座300位于传输腔200中时处于被压缩状态，在基座300上升至反应腔100，并解除施加在第一弹性密封筒420上的压力时，第一弹性密封筒420能够通过自身弹力驱动密封环410上升(即，伸长)。在第一弹性密封筒420上升时，密封环410的顶壁能够与反应腔100的底壁相抵，以封闭反应腔100的底部开口。第一弹性密封筒420在其弹力作用下，能够将密封环410压紧在反应腔100的底壁上，从而可以保证密封效果。
作为本发明的一种可选实施方式，第一弹性密封筒420可以为波纹管。 在本发明中，第一弹性密封筒420能够通过弹性驱动密封环410上升，当基座300高度下降时，基座300下压密封环410并使第一弹性密封筒420被压缩，待工艺前晶圆被放置在基座300上后，基座300高度上升并进入反应腔100，第一弹性密封筒420顶起密封环410，使之封闭反应腔100的底部开口。此时，第一弹性密封筒420将传输腔200分隔为密封筒内部空间210和密封筒外部空间220，密封环410与第一弹性密封筒420均不存在气密性缺陷(如，升降销9与基座4中的孔之间的间隙)，因而可以将密封筒内部空间210与密封筒外部空间220及密封筒外部空间220中的机械手等装置隔绝开，进而在反应腔100中通入工艺气体并进行半导体工艺时，反应腔100中的工艺气体不会因反应腔100与密封筒外部空间220之间的气压差而向密封筒外部空间220泄漏，提高了反应腔100的控压效果。
在本发明中，密封环410与第一弹性密封筒420能够将反应腔100和密封筒内部空间210与密封筒外部空间220隔绝，从而提高了反应腔100的密封效果，改善了反应腔100的控压效果，进而提高了半导体工艺的工艺效果。
并且，为保证晶圆表面洁净度，传输腔200每次传片前都需要进行抽真空，而在本发明中，密封筒外部空间220中的机械手等装置与反应腔100之间为严格的隔离密封关系，从而可以在反应腔100中进行半导体工艺的同时，对密封筒外部空间220进行抽真空处理，无需在半导体工艺之间的传片步骤中再次将传输腔200抽至本底真空，缩短了传片时间，进而提高了半导体工艺的成膜效率，提高了机台产能。
此外，本发明提供的半导体工艺腔室结构尤其适用于多反应区腔室(即，同一半导体工艺腔室中存在多个反应腔100，多个反应腔100与下方的同一传输腔200连通)，如图5所示，密封环410与第一弹性密封筒420能够对反应腔100进行严格密封，从而可解决多反应区腔室中各个反应区(反应腔)之间的气流相互干扰问题，提高多反应区腔室的成膜质量。
本发明实施例对该半导体工艺腔室中进行的半导体工艺的反应类型不作具体限定，例如，该半导体工艺腔室可以是CVD(Chemical Vapor Deposition，化学气相淀积)工艺腔室，或者，也可以是ALD(Atomic Layer Deposition，原子层沉积)工艺腔室。
作为本发明的一种优选实施方式，如图4所示，第一弹性密封筒420的外径小于基座300的外径，从而不会额外增加腔室尺寸，减小了每一工艺腔室的占地面积，提高了机台空间的利用率。
为提高第一弹性密封筒420的两端与密封环410及传输腔200底壁之间的连接强度以及拆装便捷性，作为本发明的一种优选实施方式，如图4所示，第一弹性密封筒420的底端具有连接法兰421，传输腔200的底壁上环绕通孔250形成有第一环形容纳槽251，连接法兰421设置在该第一环形容纳槽251中，且连接法兰421与第一环形容纳槽251彼此相对的两个表面之间设置有第一密封件252，用于对二者之间的间隙进行密封，从而实现对通孔251的密封，以将传输腔200位于环形密封结构400外侧的外部空间及外界环境与环形密封结构400的内侧空间隔离。
为提高气密性，第一弹性密封筒420的底端和顶端均具有上述连接法兰421，且第一弹性密封筒420优选通过焊接方式分别与底端和顶端的连接法兰421连接，在本发明实施例中，第一弹性密封筒420的底端和顶端分别通过连接法兰421与其他部件紧固连接，从而在提高第一弹性密封筒420两端连接强度的同时，还提高了对第一弹性密封筒420及其内部部件进行维护时的拆装效率。并且，传输腔200的底壁上形成有容纳第一弹性密封筒420底端连接法兰421的第一环形容纳槽251，提高了第一弹性密封筒420水平位置的定位精确性。
本发明实施例对基座300上的其他结构不做具体限定，例如，基座300上可以包括用于顶起晶圆的支撑柱。具体地，如图4所示，基座300具有沿 基座300的周向间隔分布的多个基座孔(大于等于3个)，多个基座孔中一一对应地设置有多个支撑柱310，且在每个基座孔与对应的支撑柱310之间形成有限位结构，该限位结构用于在基座300上升至支撑柱310的顶端不高于基座300的承载面的位置时，使支撑柱310随基座300一同上升；在基座300下降的过程中支撑柱310在其底端与传输腔200的底壁接触后停止下降，以使支撑柱310的顶端能够高于基座300的承载面；环形密封结构400环绕于多个支撑柱310的外侧，即，多个支撑柱310位于环形密封结构400所围空间中。
在本发明实施例中，上述限位结构可以有多种结构，例如，该限位结构为设置在支撑柱310顶部的倒锥段(直径由顶部向下逐渐减小)，以及设置在基座孔的顶端的与倒锥段配合的倒锥面。当基座300处于低位时，支撑柱310底端与传输腔200的底面相抵触，此时支撑柱310上端面高于基座上端面，从而为传输晶圆留足空间。基座300上升，支撑柱310上端的倒锥段与基座孔的倒锥面接触前，支撑柱310受重力作用不上升。当支撑柱310上端的倒锥段与基座孔的倒锥面接触后，倒锥面的支撑力抵消支撑柱310所受重力，支撑柱310随基座300上升到工艺位。
为了避免支撑柱310与基座孔之间的间隙导致的漏气问题，实现严格意义上的密封，如图4所示，第一弹性密封筒420环绕于多个支撑柱310的外侧，即，第一弹性密封筒109的内径大于基座圆周方向上均布的基座孔所在的分度圆。
为提高基座300下压密封环410时二者之间相对位置的稳定性，作为本发明的一种优选实施方式，如图8所示，密封环410包括凹盘411和凹盘法兰412，凹盘法兰412环绕凹盘411设置且与凹盘411的外沿固定连接，用于与反应腔100的底壁接触，凹盘411朝向反应腔100的一侧具有容纳凹槽414，用于在基座300下降至反应腔100底部时容纳基座300。密封环410的 容纳凹槽414中央形成有密封环410的内孔415。
在本发明实施例中，密封环410的表面上具有与基座300(在水平面上的投影)位置、大小对应的容纳凹槽414，基座300下降时先落入容纳凹槽414中，再下压容纳凹槽414的底面，使密封环410与第一弹性密封筒420均被下压；同理在基座300上升至进入反应腔100前，密封环410均在第一弹性密封筒420的抬升力作用下与基座300接触并将基座300保持在容纳凹槽414中，从而通过容纳凹槽414的侧壁保持密封环410与基座300之间相对位置的稳定性，进而提高了晶圆传输的平稳性。同时还能够保证密封环410上升至与反应腔100底部接触时，密封环410与反应腔100底部开口之间的相对位置，进而保证了密封环410与第一弹性密封筒420对反应腔100的密封效果。
为避免连接法兰421影响基座300顶部功能层上的结构，作为本发明的一种优选实施方式，密封环410上容纳凹槽414的深度小于基座300底部的加热板的厚度。
为进一步保证反应腔100的密封效果，作为本发明的一种优选实施方式，如图4、图5所示，反应腔100的底部(传输腔200的顶壁上)具有环绕反应腔100底部开口的第二环形容纳槽130，第二环形容纳槽130用于容纳凹盘法兰412。凹盘法兰412与第二环形容纳槽130彼此相对的两个表面之间设置有第二密封件131，用于对二者之间的间隙进行密封，从而在密封环410的顶壁能够与反应腔100的底壁相抵时，能够封闭反应腔100的底部开口。
在本发明实施例中，反应腔100的底壁具有上述第二环形容纳槽130，密封环410上升后，凹盘法兰412竖直进入第二环形容纳槽130中，从而通过凹盘法兰412与第二环形容纳槽130之间的配合关系进一步限制了密封环410水平方向上的自由度，使密封环410仅可以沿上下方向相对于反应腔100运动，进一步保证了密封环410与第一弹性密封筒420对反应腔100的密封 效果。
需要说明的是，传输腔200的底面到第二环形容纳槽130的底面之间的距离需小于第一弹性密封筒109的自由长度，即第一弹性密封筒109需一直处于压缩状态，以保证密封效果。
为进一步提高密封环410与第一弹性密封筒420对反应腔100的密封效果，作为本发明的一种优选实施方式，如图4、图6、图8所示，凹盘法兰412的顶面上形成有绕凹盘411周向延伸的凸起结构413，第二环形容纳槽130的底面上形成有(在水平面上的投影)位置、形状对应的凹槽结构，从而延长了凹盘法兰412与第二环形容纳槽130之间缝隙的宽度，进而提高了凹盘法兰412密封反应腔100底部开口的气密性。
本发明实施例对凹盘法兰412与第二环形容纳槽130的外轮廓形状以及凸起结构413的图案形状不作具体限定，例如，凹盘法兰412与第二环形容纳槽130的外轮廓形状以及凸起结构413的图案形状可以为三角形(或近似三角形)、方形(或近似方形)或者边数更多的正多边形(或近似正多边形)等。优选地，凹盘法兰412与第二环形容纳槽130的外轮廓形状以及凸起结构413的图案形状均为圆形，从而可以提高凹盘法兰412与第二环形容纳槽130之间的受力均匀性，并且，凹盘法兰412与第二环形容纳槽130之间无需进行角度对位，简化了设备结构并提高了设备组装效率。
本发明实施例对如何驱动基座300升降不作具体限定，例如，作为本发明的一种可选实施方式，如图4所示，半导体工艺腔室的底部设置有升降驱动组件510，升降驱动组件510通过升降轴520驱动基座300升降。可选地，如图4所示，升降驱动组件510可以包括导轨-滑块装置，导轨竖直延伸并固定在工艺腔室的底部，滑块活动设置在导轨上并与升降轴520的底端固定连接，滑块在导轨上竖直往复运动，以带动升降轴520以及升降轴520顶端连接的基座300升降运动。
为进一步提高反应腔100中半导体工艺的工艺效果并保持基座300下方结构的洁净度，作为本发明的一种优选实施方式，半导体工艺腔室还包括吹扫装置(图未示)，如图4所示，吹扫装置用于通过传输腔200底部的通孔250向第一弹性密封筒420中通入吹扫气体a。
在本发明实施例中，吹扫装置能够在半导体工艺中通过传输腔200底部的通孔250向第一弹性密封筒420中通入吹扫气体a，从而可以保证基座300下部空间中气体的压强大于反应区内工艺气体的压强，进而避免工艺气体进入基座300下部空间并形成薄膜及颗粒(第一弹性密封筒420、密封环410与基座300之间的空间无死区，气流由下至上流动畅通)，保证了基座300下方结构表面的洁净度。并且，工艺气体不会进入被吹扫气体a填充的基座300下部空间，从而减小了工艺气体所需填充的区域，即，减小了反应区域的容积，提高了同等量工艺气体进入反应区域后工艺气体的浓度，进而提高了半导体工艺的成膜速率。
为进一步提高基座300下部空间的气密性，作为本发明的一种优选实施方式，如图4所示，半导体工艺腔室还包括第二弹性密封筒530，第二弹性密封筒530的顶端与传输腔200底部的通孔250密封连接，第二弹性密封筒530的底端与升降轴520的底端密封连接，吹扫装置与第二弹性密封筒530的底端连接，并通过第二弹性密封筒530向传输腔200底部的通孔250通入吹扫气体a。
作为本发明的一种可选实施方式，如图4、图6所示，反应腔100的外侧设置有排气通路110，反应腔100的侧壁上形成有排气孔，反应腔100通过排气孔与排气通路110连通，且排气孔的高度高于基座300的工艺位置。
在本发明实施例中，反应腔100的外侧设置有排气通路110，排气通路110通过排气孔与反应腔100连通，且通过第一真空口120与外部的真空泵连接，从而由反应腔100中抽出反应废气以及进入反应区域的吹扫气体a(气 体流向如图4中箭头方向所示)。
为提高反应腔100通过排气孔向排气通路110排气的均匀性，进而提高半导体工艺的均匀性，作为本发明的一种优选实施方式，排气通路110沿水平方向环绕反应腔100设置，反应腔100的侧壁上形成有多个排气孔，且多个排气孔周向均匀分布。
作为本发明的一种可选实施方式，如图4、图6所示，传输腔200的底壁上还形成有第二真空口230，传输腔200通过第二真空口230与外部的真空泵连接，从而可在反应腔100中进行半导体工艺时对密封筒外部空间220进行抽真空。
作为本发明的一种优选实施方式，如图5、图7所示，该半导体工艺腔室包括多个反应腔100，各反应腔100均通过底部开口与传输腔200连通，传输腔200中设置有传输机械手600，用于在不同反应腔100对应的基座300之间转移晶圆。
在本发明实施例中，每个反应腔100均能够由密封环410与第一弹性密封筒420实现严格密封，从而可解决不同反应腔100之间的气流相互干扰问题，提高各反应腔100中的成膜质量(经发明人实验验证，传输腔200抽真空并检测传输腔200中的压强，传输腔200中气体压强的压升率值很小(小于5mtorr/min)，即，有效改善了传输腔200与反应腔100之间密封效果)。
在本发明实施例中，传输机械手600能够在不同工艺腔室的基座300之间转移晶圆，从而外部机械手可仅从传输腔200的传输口240向传输腔200中的部分基座300上放置晶圆或由该部分基座300上取走晶圆(进行晶圆取放操作)，简化了外部机械手伸入传输腔200后选择不同位置的基座300的定位及传输动作，提高了晶圆位置的稳定性。
具体地，传输腔200(多个反应腔100共用一个传输腔200)的底壁上形成有机械手通孔，传输机械手600包括驱动组件和上端法兰62，驱动组件 的输出轴顶端穿过机械手通孔并与上端法兰62固定连接。多个反应腔100对应的多个基座300环绕传输机械手600设置，上端法兰62上固定设置有传输手指61(包括第一传输手指611、第二传输手指612、第三传输手指613和第四传输手指614)，驱动组件用于驱动上端法兰62及其上固定的传输手指61作升降动作和(绕输出轴轴线的)旋转动作，以使传输手指61将部分基座300上的晶圆取下，并将该晶圆放置在其他基座300上。作为本发明的一种优选实施方式，如图7所示，半导体工艺腔室包括四个反应腔100对应的四个基座300(包括第一基座71、第二基座72、第三基座73、第四基座74)绕传输机械手600周向等间隔设置。
作为本发明的一种可选实施方式，外部机械手仅对两个基座300(如，第一基座71和第四基座74)进行晶圆取放操作，传输机械手600向另外两个基座300(如，第二基座74和第三基座73)上转移晶圆。
为便于本领域技术人员理解，以下提供一种利用本发明实施例提供的半导体工艺腔室进行半导体工艺的具体实施例：
在半导体工艺开始前，四个基座300均处于低位。
晶圆700由工艺腔室外部经传输口240传至第一基座71和第二基座74上方，并分别下降落到第一基座71和第二基座74对应的多个支撑柱310的上端面。传输机械手600的驱动组件驱动上端法兰62上升到预定高度并顺时针旋转直到第一手指611和第二手指612分别旋转到第四基座74和第一基座71承载的晶圆700下方。
传输机械手600的驱动组件驱动上端法兰62再次上升，使第一手指611和第二手指612分别将第一基座71和第二基座74上的晶圆700托起。
随后，驱动上端法兰62顺时针旋转180°，使第一手指611和第二手指612旋转至分别位于第二基座72和第三基座73上方。驱动上端法兰62下降，使第一手指611和第二手指612分别将晶圆700放置于第二基座72和第三基 座73支撑柱310上端面。
传输机械手600逆时针旋转一定角度，藏于基座300之间的空间处。
再次传送两片晶圆700至第一基座71和第二基座74上方，第一基座71、第二基座72、第三基座73、第四基座74在各自的升降驱动组件510的驱带动下上升。第一弹性密封筒109在自身弹力的作用下伸长使密封环410上升，直至密封环410的凹盘法兰412进入反应腔100的第二环形容纳槽130。
基座300进一步上升至工艺位，与密封环410脱离，基座300继续上升到要求的工艺位。在反应腔100中进行半导体工艺时，吹扫组件由传输腔200底部的通孔250吹入吹扫气体a，同时传输腔200通过第二真空口230排气，真空泵通过第一真空口120抽取反应区域气体，保证基座300下方压强大于基座300上方压强，在工艺过程中工艺气体不会进入到传输腔，从而消除颗粒源。
工艺完成后，升降驱动组件510驱动基座300下降至低位，晶圆700由支撑柱310顶起，并脱离基座300的上表面，为取出晶圆做准备。
先取下第一基座71和第四基座74上的晶圆700并由传输口240传出工艺腔室。
然后驱动组件驱动上端法兰62顺时针旋转，直至两根手指61旋转至位于第二基座72和第三基座73上方的晶圆700下方，驱动组件驱动上端法兰62带动两根手指61上升并分别托起第二基座72和第三基座73上方的晶圆700。然后顺时针旋转180°，再下降，将两片晶圆700分别放置于第一基座71和第四基座74上，再次取下第一基座71和第四基座74上的晶圆700并由传输口240传出工艺腔室。
如上步骤循环进行，从而对晶圆进行分组(在半导体工艺腔室包括四个反应腔100的情况下四片晶圆为一组)处理，实现高效生产。
作为本发明的第二个方面，提供一种半导体工艺设备，包括上述的半导 体工艺腔室。通过采用上述的半导体工艺腔室，本实施例提供的半导体工艺设备可以获得上述半导体工艺腔室的各种优势，此处不再赘述。
作为本发明的第三个方面，提供一种半导体工艺方法，该半导体工艺方法应用于本发明实施例提供的半导体工艺腔室，如图9所示，该方法包括：
步骤S1、向位于传输腔200中的基座300上放置工艺前晶圆700；
步骤S2、控制基座300上升至反应腔100，在此过程中，环形密封结构400封闭工艺腔100的底部开口；
步骤S3、进行半导体工艺；
步骤S4、控制基座300下降至传输腔200；
步骤S5、取下基座300上的工艺后晶圆700。
在本发明中，环形密封结构400(例如包括密封环410与第一弹性密封筒420)能够将反应腔100和密封筒内部空间210与密封筒外部空间220隔绝，从而提高了反应腔100的密封效果，改善了反应腔100的控压效果，进而提高了半导体工艺的工艺效果。并且，为保证晶圆700表面洁净度，传输腔200每次传片前都需要进行抽真空，而在本发明中，密封筒外部空间220中的机械手等装置与反应腔100之间为严格的隔离密封关系，从而可以在反应腔100中进行半导体工艺的同时，对密封筒外部空间220进行抽真空处理，无需在半导体工艺之间的传片步骤中再次将传输腔200抽至本底真空，缩短了传片时间，进而提高了半导体工艺的成膜效率，提高了机台产能。此外，本发明提供的半导体工艺腔室结构尤其适用于多反应区腔室(即，同一半导体工艺腔室中存在多个反应腔100，多个反应腔100与下方的同一传输腔200连通)，如图5所示，环形密封结构400(例如包括密封环410与第一弹性密封筒420)能够对反应腔100进行严格密封，从而可解决多反应区腔室中各个反应区(反应腔100)之间的气流相互干扰问题，提高多反应区腔室的成膜质量。
为进一步提高反应腔100中半导体工艺的工艺效果并保持基座300下方结构的洁净度，作为本发明的一种优选实施方式，半导体工艺腔室还包括吹扫装置(图未示)，如图4所示，吹扫装置用于通过传输腔200底部的通孔250向第一弹性密封筒420中通入吹扫气体a。
步骤S3还包括，在进行半导体工艺时，控制吹扫装置向第一弹性密封筒420中通入吹扫气体a。
在本发明实施例中，吹扫装置能够在半导体工艺中通过传输腔200底部的通孔250向第一弹性密封筒420中通入吹扫气体a，从而可以保证基座300下部空间中气体的压强大于反应区内工艺气体的压强，进而避免工艺气体进入基座300下部空间并形成薄膜及颗粒(第一弹性密封筒420、密封环410与基座300之间的空间无死区，气流由下至上流动畅通)，保证了基座300下方结构表面的洁净度。并且，工艺气体不会进入被吹扫气体a填充的基座300下部空间，从而减小了工艺气体所需填充的区域，即，减小了反应区域的容积，提高了同等量工艺气体进入反应区域后工艺气体的浓度，进而提高了半导体工艺的成膜速率。
为简化外部机械手伸入传输腔200后的定位及传输动作，提高晶圆700位置的稳定性，作为本发明的一种优选实施方式，如图5、图7所示，半导体工艺腔室包括多个反应腔100，传输腔200中设置有传输机械手600，用于在不同反应腔100对应的基座300之间转移晶圆700；
如图10所示，向基座300上放置工艺前晶圆700的步骤S1包括：
步骤S11、向部分基座300上放置工艺前晶圆700；
步骤S12、控制传输机械手600将部分基座300上的工艺前晶圆700转移至其他基座300上；
步骤S13、再次向部分基座300上放置工艺前晶圆700。
相应地，如图11所示，取下基座300上的工艺后晶圆700的步骤S5包 括：
步骤S51、取下部分基座300上的工艺后晶圆700；
步骤S52、控制传输机械手600将其他基座300上的工艺后晶圆700转移至部分基座300上；
步骤S53、再次取下部分基座300上的工艺后晶圆700。
具体地，传输腔200的底壁上形成有机械手通孔，传输机械手600包括驱动组件和上端法兰62，驱动组件的输出轴顶端穿过机械手通孔并与上端法兰62固定连接。多个反应腔100对应的多个基座300环绕传输机械手600设置，上端法兰62上固定设置有传输手指6161(包括第一传输手指611、第二传输手指612、第三传输手指613和第四传输手指614)，驱动组件用于驱动上端法兰62及其上固定的传输手指61作升降动作和(绕输出轴轴线的)旋转动作，以使传输手指61将部分基座300上的晶圆700取下，并将该晶圆700放置在其他基座300上。
对应地，控制传输机械手600将部分基座300上的工艺前晶圆700转移至其他基座300上的步骤S12包括：
步骤S121、控制驱动组件驱动上端法兰62上升或下降，使传输手指61的高度上升或下降至工艺前晶圆700与基座300的承载面之间；
步骤S122、控制驱动组件驱动上端法兰62旋转，使至少部分传输手指61旋转至部分基座300(如，在图7所示的半导体工艺腔室包括4个反应腔100的情况下，部分基座300可以是第一基座71和第四基座74)上的工艺前晶圆700下方，并控制驱动组件驱动上端法兰62升高，使传输手指61取下部分基座300(第一基座71和第四基座74)上的工艺前晶圆700；
步骤S123、控制驱动组件驱动上端法兰62旋转，使传输手指61上承载的工艺前晶圆700旋转至位于其他基座300(第二基座74和第三基座73)上方，并控制驱动组件驱动上端法兰62下降，使传输手指61将工艺前晶圆700 放置在其他基座300上；
步骤S124、控制驱动组件驱动上端法兰62旋转，使传输手指61离开基座300。
相应地，控制传输机械手600将其他基座300上的工艺后晶圆700转移至部分基座300上的步骤S52包括：
步骤S521、控制驱动组件驱动上端法兰62上升或下降，使传输手指61的高度上升或下降至工艺前晶圆700与基座300的承载面之间；
步骤S522、控制驱动组件驱动上端法兰62旋转，使至少部分传输手指61旋转至其他基座300(第二基座74和第三基座73)上的工艺前晶圆700下方，并控制驱动组件驱动上端法兰62升高，使传输手指61取下其他基座300上的工艺前晶圆700；
步骤S523、控制驱动组件驱动上端法兰62旋转，使传输手指61上承载的工艺前晶圆700旋转至位于部分基座300(第一基座71和第四基座74)上方，并控制驱动组件驱动上端法兰62下降，使传输手指61将工艺前晶圆700放置在部分基座300上；
步骤S524、控制驱动组件驱动上端法兰62旋转，使传输手指61离开基座300。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (14)

  1. 一种半导体工艺腔室，包括反应腔和位于所述反应腔下方的传输腔，所述反应腔通过底部开口与所述传输腔连通，所述半导体工艺腔室中设置有基座，所述基座的底部连接有升降轴，以能够通过所述底部开口在所述反应腔与所述传输腔之间升降，其特征在于，所述半导体工艺腔室中还设置有具有弹性的环形密封结构，所述环形密封结构设置于所述基座的下方且环绕在所述基座的升降轴周围，在所述基座下降至所述传输腔的过程中，所述基座能够下压所述环形密封结构使之被压缩；在所述基座上升至所述反应腔，并解除施加在所述环形密封结构上的压力时，所述环形密封结构在自身弹力的作用下伸长，直至与所述反应腔的底壁相抵，以封闭所述底部开口。
  2. 根据权利要求1所述的半导体工艺腔室，其特征在于，所述环形密封结构包括密封环和第一弹性密封筒，其中，所述第一弹性密封筒的顶端与所述密封环的底壁密封连接，所述第一弹性密封筒的底端与所述传输腔的底壁密封连接；在所述第一弹性密封筒伸长时，所述密封环的顶壁能够与所述反应腔的底壁相抵，以封闭所述底部开口；
    所述升降轴的底端穿过设置在所述传输腔底部的通孔，延伸至所述传输腔的外部；所述第一弹性密封筒的底端环绕在所述通孔周围，用于密封所述通孔。
  3. 根据权利要求2所述的半导体工艺腔室，其特征在于，所述第一弹性密封筒为波纹管。
  4. 根据权利要求2所述的半导体工艺腔室，其特征在于，所述第一弹性密封筒的底端具有连接法兰，所述传输腔的底壁上环绕所述通孔形成有第一环形容纳槽，所述连接法兰设置在所述第一环形容纳槽中，且所述连接法 兰与所述第一环形容纳槽彼此相对的两个表面之间设置有第一密封件。
  5. 根据权利要求2所述的半导体工艺腔室，其特征在于，所述密封环包括凹盘和凹盘法兰，所述凹盘法兰环绕所述凹盘设置且与所述凹盘的外沿固定连接，所述凹盘法兰用于与所述反应腔的底壁接触，所述凹盘朝向所述反应腔的一侧具有容纳凹槽，用于在所述基座下降时容纳所述基座。
  6. 根据权利要求5所述的半导体工艺腔室，其特征在于，所述反应腔的底壁具有环绕所述底部开口的第二环形容纳槽，所述第二环形容纳槽用于容纳所述凹盘法兰，且所述凹盘法兰与所述第二环形容纳槽彼此相对的两个表面之间设置有第二密封件。
  7. 根据权利要求1所述的半导体工艺腔室，其特征在于，所述基座具有沿所述基座的周向间隔分布的多个基座孔，多个所述基座孔中一一对应地设置有多个支撑柱，且在每个所述基座孔与对应的所述支撑柱之间形成有限位结构，所述限位结构用于在基座上升至所述支撑柱的顶端不高于所述基座的承载面的位置时，使所述支撑柱随所述基座一同上升；
    在所述基座下降的过程中，所述支撑柱在其底端与所述传输腔的底壁接触后停止下降，以使所述支撑柱的顶端能够高于所述基座的承载面；
    所述环形密封结构环绕于多个所述支撑柱的外侧。
  8. 根据权利要求1至7中任意一项所述的半导体工艺腔室，其特征在于，所述反应腔为多个，各所述反应腔均具有所述底部开口，所述基座的数量与所述反应腔的数量相同，且一一对应地设置；所述传输腔中设置有传输机械手，用于在不同所述反应腔对应的所述基座之间转移晶圆。
  9. 根据权利要求8所述的半导体工艺腔室，其特征在于，多个所述反 应腔环绕所述传输机械手设置；
    所述传输机械手包括驱动组件、上端法兰以及固定设置在所述上端法兰上的传输手指，所述驱动组件用于驱动所述上端法兰及其上固定的所述传输手指作升降动作和旋转动作，以使所述传输手指将部分所述基座上的晶圆取下，并将所述晶圆放置在其他所述基座上。
  10. 根据权利要求2所述的半导体工艺腔室，其特征在于，所述半导体工艺腔室还包括吹扫装置，所述吹扫装置用于通过所述传输腔底部的通孔向第一弹性密封筒中通入吹扫气体。
  11. 一种半导体工艺设备，其特征在于，包括权利要求1至10中任意一项所述的半导体工艺腔室。
  12. 一种半导体工艺方法，其特征在于，所述半导体工艺方法应用于权利要求11所述的半导体工艺设备，所述方法包括：
    向位于所述传输腔中的所述基座上放置工艺前晶圆；
    控制所述基座上升至所述反应腔，在此过程中，所述环形密封结构封闭所述底部开口；
    进行半导体工艺；
    控制所述基座下降至所述传输腔；
    取下所述基座上的工艺后晶圆。
  13. 根据权利要求12所述的半导体工艺方法，其特征在于，所述反应腔为多个，各所述反应腔均具有所述底部开口，所述基座的数量与所述反应腔的数量相同，且一一对应地设置；所述传输腔中设置有传输机械手，用于在不同所述反应腔对应的所述基座之间转移晶圆；
    所述向所述基座上放置工艺前晶圆，包括：
    向部分所述基座上放置工艺前晶圆；
    控制所述传输机械手将部分所述基座上的工艺前晶圆转移至其他所述基座上；
    再次向部分所述基座上放置工艺前晶圆；
    所述取下所述基座上的工艺后晶圆，包括：
    取下部分所述基座上的工艺后晶圆；
    控制所述传输机械手将其他所述基座上的工艺后晶圆转移至部分所述基座上；
    再次取下部分所述基座上的工艺后晶圆。
  14. 根据权利要求13所述的半导体工艺方法，其特征在于，多个所述反应腔环绕所述传输机械手设置；所述传输机械手包括驱动组件、上端法兰以及固定设置在所述上端法兰上的传输手指，所述驱动组件用于驱动所述上端法兰及其上固定的所述传输手指作升降动作和旋转动作，以使所述传输手指将部分所述基座上的晶圆取下，并将所述晶圆放置在其他所述基座上；
    所述控制所述传输机械手将部分所述基座上的工艺前晶圆转移至其他基座上，包括：
    控制所述驱动组件驱动所述上端法兰上升或下降，使所述传输手指的高度上升或下降至所述工艺前晶圆与所述基座的承载面之间；
    控制所述驱动组件驱动所述上端法兰旋转，使至少部分所述传输手指旋转至部分所述基座上的工艺前晶圆下方，并控制所述驱动组件驱动所述上端法兰升高，使所述传输手指取下部分所述基座上的工艺前晶圆；
    控制所述驱动组件驱动所述上端法兰旋转，使所述传输手指上承载的工艺前晶圆旋转至位于其他所述基座上方，并控制所述驱动组件驱动所述上端法兰下降，使所述传输手指将所述工艺前晶圆放置在其他所述基座上；
    控制所述驱动组件驱动所述上端法兰旋转，使所述传输手指离开所述基 座；
    所述控制所述传输机械手将其他所述基座上的工艺后晶圆转移至部分所述基座上包括：
    控制所述驱动组件驱动所述上端法兰上升或下降，使所述传输手指的高度上升或下降至所述工艺前晶圆与所述基座的承载面之间；
    控制所述驱动组件驱动所述上端法兰旋转，使至少部分所述传输手指旋转至其他所述基座上的工艺前晶圆下方，并控制所述驱动组件驱动所述上端法兰升高，使所述传输手指取下其他所述基座上的工艺前晶圆；
    控制所述驱动组件驱动所述上端法兰旋转，使所述传输手指上承载的工艺前晶圆旋转至位于部分所述基座上方，并控制所述驱动组件驱动所述上端法兰下降，使所述传输手指将所述工艺前晶圆放置在部分所述基座上；
    控制所述驱动组件驱动所述上端法兰旋转，使所述传输手指离开所述基座。
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