WO2023024209A1

WO2023024209A1 - Mask defect detection method and apparatus, electronic device, storage medium, and chip

Info

Publication number: WO2023024209A1
Application number: PCT/CN2021/120259
Authority: WO
Inventors: 李树平; 宋文康
Original assignee: 长鑫存储技术有限公司
Priority date: 2021-08-25
Filing date: 2021-09-24
Publication date: 2023-03-02
Also published as: CN113674250B; CN113674250A

Abstract

The present application relates to the technical field of semiconductors, and discloses a mask defect detection method and apparatus, an electronic device, a storage medium, and a chip. The mask defect detection method comprises: obtaining a production-level electron beam exposure system file of a mask; detecting an identifier of any pattern in the production-level electron beam exposure system file to obtain a reference pattern; and calling an exclusive-or operation function of the production-level electron beam exposure system, and comparing whether the pattern to be detected is the same as the reference pattern, the pattern to be detected being a pattern which is repeated with the reference pattern. The method implements automatic detection of mask defects, such that labor costs can be saved, and the detection method is accurate in result.

Description

Photomask defect detection method, device, electronic equipment, storage medium and chip

cross reference

This application is based on a Chinese patent application with application number 202110979798.9 and a filing date of August 25, 2021, and claims the priority of this Chinese patent application. The entire content of this Chinese patent application is hereby incorporated by reference into this application.

technical field

The present application relates to the field of semiconductor technology, in particular to a method, device, electronic equipment, storage medium and chip for detecting a defect in a photomask.

Background technique

Reticle, also called photomask, the English name is Mask, is a master plate made of quartz and can be used in the semiconductor exposure process.

As far as the existing semiconductor element manufacturing technology is concerned, the circuit pattern of the semiconductor element is formed by transferring the circuit pattern to the surface of the wafer through a photomask.

In the semiconductor manufacturing process, the defect detection process of the photomask is an indispensable link. The current photomask inspection method is manual inspection, which is time-consuming and laborious.

Contents of the invention

The purpose of the present application is to provide a photomask defect detection method, device, electronic equipment, storage medium and chip to at least solve the time-consuming and laborious problem of the existing photomask defect detection.

The technical scheme of the application is as follows:

According to the first aspect of the embodiment of the present application, there is provided a photomask defect detection method, the method may include: obtaining the production-level electron beam exposure system file of the photomask; detecting the logo of any pattern in the production-level electron beam exposure system file, Obtain the reference pattern; call the XOR operation function of the production-level electron beam exposure system to compare whether the pattern to be detected is the same as the reference pattern, and the pattern to be detected is a pattern that is repeated with the reference pattern.

According to the second aspect of the embodiment of the present application, there is provided a photomask defect detection device, which may include: an acquisition module, used to obtain the production-level electron beam exposure system file of the photomask; a reference pattern determination module, used to detect the production level The identification of any pattern in the file of the high-level electron beam exposure system to obtain the reference pattern; the comparison detection module is used to call the XOR operation function of the production-level electron beam exposure system to compare whether the pattern to be detected is the same as the reference pattern, and the pattern to be detected is the same as The pattern in which the fiducial pattern repeats.

According to a third aspect of the embodiments of the present application, an electronic device is provided, and the electronic device may include:

A processor, a memory, and a program or instruction stored on the memory and operable on the processor. When the program or instruction is executed by the processor, the steps of the photomask defect detection method according to the first aspect are realized.

According to a fourth aspect of the embodiments of the present application, a readable storage medium is provided, and programs or instructions are stored on the readable storage medium, and when the programs or instructions are executed by a processor, the steps of the photomask defect detection method according to the first aspect are implemented.

According to a fifth aspect of the embodiments of the present application, there is provided a chip, the chip includes a processor and a communication interface, the communication interface is coupled to the processor, and the processor is used to run programs or instructions to implement the In one aspect, the steps of a method for detecting a defect in a photomask.

The technical solutions provided by the embodiments of the present application bring at least the following beneficial effects:

In the embodiment of the present application, by obtaining the production-level electron beam exposure system file of the photomask, detecting the logo of any pattern in the production-level electron beam exposure system file, the reference pattern is obtained; and calling the XOR operation function of the production-level electron beam exposure system for comparison Whether the pattern to be detected is the same as the reference pattern realizes automatic detection of photomask defects, and the detection method has accurate results and saves labor costs.

Description of drawings

FIG. 1 is a schematic diagram of a defect detection process of a mask according to an exemplary embodiment;

Fig. 2 is a schematic structural diagram of a photomask defect detection device according to an exemplary embodiment;

Fig. 3 is a schematic structural diagram of a ratio detection module according to an exemplary embodiment;

Fig. 4 is a schematic structural diagram of a ratio detection unit according to an exemplary embodiment;

Fig. 5 is a schematic structural diagram of a photomask defect detection device according to another exemplary embodiment;

Fig. 6 is a schematic structural diagram of a photomask defect detection device according to a specific embodiment;

Fig. 7 is a schematic structural diagram of a photomask defect detection device according to another specific embodiment;

Fig. 8 is a schematic structural diagram of an electronic device according to an exemplary embodiment;

Fig. 9 is a schematic diagram of a hardware structure of an electronic device according to an exemplary embodiment

Detailed ways

In order to enable ordinary persons in the art to better understand the technical solutions of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings.

It should be noted that the terms "first" and "second" in the description and claims of the present application and the above drawings are used to distinguish similar objects, but not necessarily used to describe a specific sequence or sequence. It is to be understood that the data so used are interchangeable under appropriate circumstances such that the embodiments of the application described herein can be practiced in sequences other than those illustrated or described herein. The implementations described in the following exemplary embodiments do not represent all implementations consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with aspects of the present application as recited in the appended claims.

At present, the process of the last inspection of the mask (job deck view in English, abbreviated as JDV) is manually inspected by engineers. The last inspection process needs to check whether all patterns (patterns in English) are correct. The last inspection of each mask takes about 1 hour, which is extremely time-consuming and error-prone. For this reason, the present application provides a photomask defect detection method to improve the last inspection rate of the photomask.

The photomask defect detection method provided by the embodiment of the present application will be described in detail below through specific embodiments and application scenarios with reference to the accompanying drawings.

As shown in Figure 1, in the first aspect of the embodiment of the present application, a method for detecting a mask defect is provided, the method may include:

S110: Obtain the production-level electron beam exposure system file of the mask;

S120: Detect the mark of any pattern in the file of the production-level electron beam exposure system to obtain the reference pattern;

S130: calling the XOR operation function of the production-level electron beam exposure system to compare whether the pattern to be detected is the same as the reference pattern, and the pattern to be detected is a pattern repeated with the reference pattern.

The method of this embodiment obtains the production-level electron beam exposure system file of the photomask, detects the logo of any pattern in the production-level electron beam exposure system file, and obtains the reference pattern; and calls the XOR operation function of the production-level electron beam exposure system to compare Whether the pattern to be detected is the same as the reference pattern realizes automatic detection of photomask defects, and the detection method has accurate results and saves labor costs.

For a clearer description, the above method steps are described separately next:

First is step S110, obtaining the production-level electron beam exposure system file of the photomask.

In this step, the production-level electron beam exposure system file (Manufacturing Electron-Beam Exposure System, referred to as MEBES in English) can usually be 4 times the size of the graphic data stream file (Graphic Data Stream, referred to as GDS in English). The graphic will be reduced by 4 times and placed on the surface of the wafer. The graphic data stream file is the original data on the wafer, and the production-level electron beam exposure system file corresponds to the real mask production data.

Next, step S120 is introduced, which detects the logo of any pattern in the file of the production-level electron beam exposure system to obtain the reference pattern.

In this step, the file of the production-level electron beam exposure system may include multiple patterns (pattern in English), and each pattern may include multiple marks (mark in English). In order to provide a fiducial reference, a pattern can be detected in advance as a fiducial pattern.

Exemplarily, a pattern may be identified through manual detection, and this pattern may be used as a reference pattern.

In another example, a pattern may be automatically detected and recognized through a machine learning model, and this pattern may be used as a reference pattern.

Finally, step S130 is introduced, in which the XOR operation function of the production-level electron beam exposure system is called to compare whether the pattern to be detected is the same as the reference pattern.

The XOR operation function in this step is applied to logical operation. The mathematical symbol for XOR is

The computer notation is "xor". Its algorithm is:

If the two values of a and b are not the same, the XOR result is 1, and if the two values of a and b are the same, the XOR result is 0. Use the XOR operation function to compare whether the pattern to be detected is the same as the reference pattern.

Exemplarily, comparing whether the pattern to be detected is the same as the reference pattern may include: obtaining the pattern coordinate book of the mask; importing the pattern coordinate book into the production-level electron beam exposure system; positioning the reference coordinates on the reference pattern, and positioning the calculation coordinates on the For the pattern to be detected, call the XOR operation function of the production-level electron beam exposure system to perform XOR operation, and compare whether the pattern to be detected is the same as the reference pattern.

In this example, positioning the reference coordinates on the reference pattern and positioning the calculation coordinates on the pattern to be detected may include: extending the reference coordinates based on the origin of the coordinates for a preset distance to form a reference coordinate area; positioning the reference coordinate area on the reference pattern ; Extending the operation coordinates based on the origin of the coordinates for a preset distance to form an operation coordinate area; positioning the operation coordinate area on the pattern to be detected.

In this step, the automatic detection process realized by the XOR operation function is to subtract each mark of the pattern to be detected from the mark corresponding to the reference pattern. The result of the operation may be 0 or 1. If the XOR operation result is 0, it is determined that the mask is a normal mask, and a no abnormality prompt is issued. If the XOR operation result is 1, it is determined that the mask is an abnormal mask, and an abnormal prompt is issued.

The pattern to be detected should be consistent with the reference pattern in theory. In the actual production process of the mask, the actual situation of the pattern to be detected is not necessarily consistent with the reference pattern due to the problem of equipment accuracy or manufacturing process. Therefore, it is necessary to Do one last check. The current last inspection is manual inspection, and the inspection of each mask takes at least 1 hour. In this step, the XOR operation function of the production-level electron beam exposure system is used to realize the automatic inspection of the mask, which greatly improves the efficiency of mask inspection and saves labor costs.

In some optional embodiments of the present application, calling the XOR operation function of the production-level electron beam exposure system to compare whether the pattern to be detected is the same as the reference pattern may include:

Obtain the pattern coordinate book of the mask;

Import the pattern coordinate book into the production-level electron beam exposure system;

Position the reference coordinates on the reference pattern, locate the operation coordinates on the pattern to be detected, call the XOR operation function of the production-level electron beam exposure system to perform XOR operation, and compare whether the pattern to be detected is the same as the reference pattern.

In this embodiment, the pattern to be detected and the reference pattern are positioned using the coordinate book, and the discharge positions of the patterns at different positions are determined and marked. Specifically, L can be used to indicate that the pattern is placed from left to right, T can be used to indicate that the pattern is placed from top to bottom; L, R, T can indicate that the pattern is placed in a row, L1, R1, T1 , B1 can indicate that the pattern is arranged larger than one row.

In some optional embodiments of the present application, positioning the reference coordinates on the reference pattern, and positioning the calculation coordinates on the pattern to be detected may include: extending the reference coordinates based on the origin of the coordinates for a preset distance to form a reference coordinate area; The coordinate area is positioned on the reference pattern; the operation coordinates are extended outward by a preset distance based on the origin of the coordinates to form an operation coordinate area; the operation coordinate area is positioned on the pattern to be detected.

In some optional embodiments of the present application, comparing whether the pattern to be detected is the same as the reference pattern may specifically be: subtracting each identifier of the pattern to be detected from the identifier corresponding to the reference pattern.

In the above-described embodiment, before detection, the detection coordinates of the XOR operation function need to be extended outwards to a preset size, which can be 10-30. Taking 21.25 as an example, the detection coordinates all extend outwards by 21.25 (the coordinate size is 42.5*42.5), taking the reference pattern as a reference and subtracting it from the pattern to be detected, and checking whether the XOR structure is abnormal.

In some optional embodiments of the present application, before obtaining the production-level electron beam exposure system file of the photomask, the photomask defect detection method further includes: acquiring the graphic data stream file of the photo mask, and converting the graphic data stream file into Production-grade electron beam exposure system documentation.

In some optional embodiments of the present application, after comparing whether the pattern to be detected is the same as the reference pattern, the mask defect detection method may further include: if the XOR operation result is 0, determine that the mask is a normal mask, and send out Exception prompt.

In this implementation, there is no abnormality prompt for the mask whose detection result is normal, and prompts the staff to perform the next mask inspection.

In some optional embodiments of the present application, after comparing whether the pattern to be detected is the same as the reference pattern, the mask defect detection method may further include: if the XOR operation result is 1, determine that the mask is an abnormal mask, and issue an abnormal hint.

In this implementation, abnormality prompts are given to masks whose detection results are abnormal, and staff are prompted to perform manual mask detection.

The method of the above embodiment obtains the production-level electron beam exposure system file of the photomask, detects the mark of any pattern in the production-level electron beam exposure system file, and obtains the reference pattern; and calls the XOR operation function of the production-level electron beam exposure system to compare Whether the pattern to be detected is the same as the reference pattern, thereby realizing automatic detection of mask defects and saving labor costs.

It should be noted that, the reticle defect detection method provided in the embodiment of the present application may be executed by a reticle defect detection device, or a control module in the reticle defect detection device for performing the reticle defect detection method. In the embodiment of the present application, the method for detecting the defect of the reticle provided by the device for detecting the reticle defect is taken as an example to illustrate the device for detecting the defect of the reticle provided by the embodiment of the present application.

As shown in Figure 2, in the second aspect of the embodiment of the present application, a photomask defect detection device is provided, which may include:

An acquisition module 210, configured to acquire the production-level electron beam exposure system file of the photomask;

The reference pattern determination module 220 is used to detect the mark of any pattern in the production-level electron beam exposure system file to obtain the reference pattern;

The comparison detection module 230 is used to call the XOR operation function of the production-level electron beam exposure system to compare whether the pattern to be detected is the same as the reference pattern, and the pattern to be detected is a pattern that is repeated with the reference pattern.

The device in this embodiment acquires the production-level electron beam exposure system file of the mask by using the acquisition module 210, and uses the reference pattern determination module 220 to detect the mark of any pattern in the production-level electron beam exposure system file to obtain the reference pattern; and uses the comparison detection module The 230 uses the XOR operation function of the production-level electron beam exposure system to compare whether the pattern to be detected is the same as the reference pattern, thereby realizing automatic detection of mask defects and saving labor costs.

As shown in FIG. 3, in some optional embodiments of the present application, the contrast detection module 230 may include:

A coordinate book acquisition unit 231, configured to acquire the pattern coordinate book of the mask;

The coordinate book importing unit 232 is used to import the pattern coordinate book into the production-level electron beam exposure system;

The comparison detection unit 233 is used to locate the reference coordinates on the reference pattern, locate the calculation coordinates on the pattern to be detected, call the XOR operation function of the production-level electron beam exposure system to perform the XOR operation, and compare whether the pattern to be detected is the same as the reference pattern .

As shown in FIG. 4, in some optional embodiments of the present application, the comparison detection unit 233 may include:

A reference coordinate area generating subunit 2331, configured to extend the reference coordinates outward for a preset distance based on the coordinate origin to form a reference coordinate area;

A reference positioning subunit 2332, configured to locate the reference coordinate area on the reference pattern;

The operation coordinate area generation subunit 2333 is used to extend the operation coordinates based on the origin of the coordinates to a preset distance to form an operation coordinate area;

The calculation positioning subunit 2334 is used for positioning the calculation coordinate area on the pattern to be detected.

In some optional embodiments of the present application, the contrast detection unit 233 is specifically used for:

Each signature of the pattern to be detected is subtracted from the signature corresponding to the reference pattern.

As shown in FIG. 5, in some optional embodiments of the present application, the photomask defect detection device may further include:

The graphic data stream file conversion module 240 is used to obtain the graphic data stream file of the mask, and convert the graphic data stream file into a production-level electron beam exposure system file.

As shown in FIG. 6, in some optional embodiments of the present application, the photomask defect detection device may further include: a first prompting module 250, configured to determine that the photomask is a normal photomask when the result of the XOR operation is 0 , issue a no-exception prompt. In this way, the staff can smoothly make the mask.

In order to be able to detect and locate a defective photomask, as shown in FIG. 7 , in some optional embodiments of the present application, the photomask defect detection device further includes: a second prompting module 260, used for when the XOR operation result is 1, it is determined that the mask is an abnormal mask, and an abnormal prompt is issued. When a defect in the mask is detected, the staff is immediately reminded to carry out detection and timely rectification.

The device of the above-mentioned embodiment performs the pattern detection of the reticle by utilizing the acquisition module 210, the reference pattern determination module 220, the contrast detection module 230, the graphics data stream file conversion module 240, the first prompt module 250, and the second prompt module 260, so as to realize the optical mask. The automatic detection of cover defects saves labor costs and the detection results are accurate.

The photomask defect detection apparatus in the embodiment of the present application may be a mobile electronic device, may also be a non-mobile electronic device, and may also be a component, an integrated circuit, or a chip in a terminal. Exemplarily, the mobile electronic device may be a mobile phone, a tablet computer, a notebook computer, a handheld computer, a vehicle electronic device, a wearable device, an ultra-mobile personal computer (ultra-mobile personal computer, UMPC), a netbook or a personal digital assistant (personal digital assistant). assistant, PDA), etc., non-mobile electronic devices can be servers, network attached storage (Network Attached Storage, NAS), personal computer (personal computer, PC), television (television, TV), teller machine or self-service machine, etc., this application Examples are not specifically limited.

The photomask defect detection device in the embodiment of the present application may be a device with an operating system. The operating system may be an Android (Android) operating system, an ios operating system, or other possible operating systems, which are not specifically limited in this embodiment of the present application.

The photomask defect detection device provided by the embodiment of the present application can realize various processes realized by the method embodiment in FIG. 1 , and details are not repeated here to avoid repetition.

Optionally, as shown in FIG. 8 , the embodiment of the present application further provides an electronic device 800, including a processor 801, a memory 802, and programs or instructions stored in the memory 802 and operable on the processor 801, When the program or instruction is executed by the processor 801, the various processes of the above-mentioned embodiment of the photomask defect detection method can be realized, and the same technical effect can be achieved. To avoid repetition, details are not repeated here.

It should be noted that the electronic devices in the embodiments of the present application include the above-mentioned mobile electronic devices and non-mobile electronic devices.

FIG. 9 is a schematic diagram of a hardware structure of an electronic device implementing an embodiment of the present application.

The hardware 900 of the electronic device includes but not limited to: a radio frequency unit 901, a network module 902, an audio output unit 903, an input unit 904, a sensor 905, a display unit 906, a user input unit 907, an interface unit 908, a memory 909, and a processor 910 and other components.

Those skilled in the art can understand that the hardware 900 of the electronic device may also include a power supply (such as a battery) for supplying power to various components, and the power supply may be logically connected to the processor 910 through the power management system, so that the management of charging, discharging, and power management functions. The structure of the electronic device shown in FIG. 9 does not constitute a limitation to the electronic device. The electronic device may include more or fewer components than shown in the figure, or combine some components, or arrange different components, which will not be repeated here. .

Wherein, the processor 910 is configured to call the XOR operation function of the production-level electron beam exposure system to compare whether the pattern to be detected is the same as the reference pattern, and the pattern to be detected is a pattern repeated with the reference pattern.

The display unit 906 is configured to display the detection result, that is, the result of the XOR operation.

The electronic device in the above embodiment obtains the production-level electron beam exposure system file of the photomask, detects the mark of any pattern in the production-level electron beam exposure system file, and obtains the reference pattern; and calls the XOR operation function of the production-level electron beam exposure system , and compare whether the pattern to be detected is the same as the reference pattern, so as to realize automatic detection of mask defects and save labor costs.

It should be understood that, in the embodiment of the present application, the input unit 904 may include a graphics processor (Graphics Processing Unit, GPU) 9041 and a microphone 9042, and the graphics processor 9041 is used for the image capture device ( Such as the image data of the still picture or video obtained by the camera) for processing. The display unit 906 may include a display panel 9061, and the display panel 9061 may be configured in the form of a liquid crystal display, an organic light emitting diode, or the like. The user input unit 907 includes a touch panel 9071 and other input devices 9072 . The touch panel 9071 is also called a touch screen. The touch panel 9071 may include two parts, a touch detection device and a touch controller. Other input devices 9072 may include, but are not limited to, physical keyboards, function keys (such as volume control buttons, switch buttons, etc.), trackballs, mice, and joysticks, and details will not be described here. The memory 909 can be used to store software programs as well as various data, including but not limited to application programs and operating systems. The processor 910 may integrate an application processor and a modem processor, wherein the application processor mainly processes an operating system, user interface, application program, etc., and the modem processor mainly processes wireless communication. It can be understood that the foregoing modem processor may not be integrated into the processor 910 .

The embodiment of the present application also provides a readable storage medium, the readable storage medium stores a program or an instruction, and when the program or instruction is executed by a processor, each process of the above embodiment of the photomask defect detection method is realized, and can To achieve the same technical effect, in order to avoid repetition, no more details are given here.

Wherein, the processor is the processor in the electronic device described in the above embodiments. The readable storage medium includes computer readable storage medium, such as computer read-only memory (Read-Only Memory, ROM), random access memory (Random Access Memory, RAM), magnetic disk or optical disk, etc.

The embodiment of the present application further provides a chip, the chip includes a processor and a communication interface, the communication interface is coupled to the processor, and the processor is used to run programs or instructions to implement the above-mentioned mask defect detection method Each process of the example, and can achieve the same technical effect, in order to avoid repetition, will not repeat them here.

It should be understood that the chips mentioned in the embodiments of the present application may also be called system-on-chip, system-on-chip, system-on-a-chip, or system-on-a-chip.

It should be noted that, in this document, the term "comprising", "comprising" or any other variation thereof is intended to cover a non-exclusive inclusion such that a process, method, article or apparatus comprising a set of elements includes not only those elements, It also includes other elements not expressly listed, or elements inherent in the process, method, article, or device. Without further limitations, an element defined by the phrase "comprising a ..." does not preclude the presence of additional identical elements in the process, method, article, or apparatus comprising that element. In addition, it should be pointed out that the scope of the methods and devices in the embodiments of the present application is not limited to performing functions in the order shown or discussed, and may also include performing functions in a substantially simultaneous manner or in reverse order according to the functions involved. Functions are performed, for example, the described methods may be performed in an order different from that described, and various steps may also be added, omitted, or combined. Additionally, features described with reference to certain examples may be combined in other examples.

Through the description of the above embodiments, those skilled in the art can clearly understand that the methods of the above embodiments can be implemented by means of software plus a necessary general-purpose hardware platform, and of course also by hardware, but in many cases the former is better implementation. Based on such an understanding, the technical solution of the present application can be embodied in the form of computer software products, which are stored in a storage medium (such as ROM/RAM, magnetic disk, etc.) , optical disc), including several instructions to enable a terminal (which may be a mobile phone, computer, server, or network device, etc.) to execute the methods described in various embodiments of the present application.

The embodiments of the present application have been described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementations. The above-mentioned specific implementations are only illustrative and not restrictive. Those of ordinary skill in the art will Under the inspiration of this application, without departing from the purpose of this application and the scope of protection of the claims, many forms can also be made, all of which belong to the protection of this application.

Claims

A method for detecting a mask defect, comprising:

Obtain production-grade e-beam exposure system documentation for reticles;

Detecting the logo of any pattern in the production-level electron beam exposure system file to obtain a reference pattern;

Invoking the XOR operation function of the production-level electron beam exposure system to compare whether the pattern to be detected is the same as the reference pattern, and the pattern to be detected is a pattern repeated with the reference pattern.
The photomask defect detection method according to claim 1, wherein calling the XOR operation function of the production-level electron beam exposure system to compare whether the pattern to be detected is the same as the reference pattern comprises:

Obtaining the pattern coordinate book of the mask;

importing the pattern coordinate book into the production-grade electron beam exposure system;

Positioning the reference coordinates on the reference pattern, positioning the operation coordinates on the pattern to be detected, calling the XOR operation function of the production-level electron beam exposure system to perform the XOR operation, and comparing whether the pattern to be detected is the same as the reference pattern.
The photomask defect detection method according to claim 2, wherein said positioning the reference coordinates on the reference pattern and positioning the calculation coordinates on the pattern to be detected comprises:

Extend the reference coordinates based on the coordinate origin to a preset distance to form a reference coordinate area;

positioning the reference coordinate area on the reference pattern;

Extend the operation coordinates based on the coordinate origin to a preset distance to form an operation coordinate area;

The operation coordinate area is positioned on the pattern to be detected.
The photomask defect detection method according to claim 2, wherein, whether the pattern to be detected is the same as the reference pattern is specifically:

Subtracting each signature of the pattern to be detected from the signature corresponding to the reference pattern.
The photomask defect detection method according to any one of claims 1-4, wherein, before obtaining the production-level electron beam exposure system file of the photomask, the photomask defect detection method further comprises:

The graphic data stream file of the photomask is obtained, and the graphic data stream file is converted into the production-level electron beam exposure system file.
The photomask defect detection method according to any one of claims 1-4, wherein, after comparing whether the pattern to be detected is the same as the reference pattern, the photomask defect detection method further comprises:

If the XOR operation result is 0, it is determined that the mask is a normal mask, and a no abnormality prompt is issued.
The photomask defect detection method according to any one of claims 1-4, wherein, after comparing whether the pattern to be detected is the same as the reference pattern, the photomask defect detection method further comprises:

If the XOR operation result is 1, it is determined that the mask is an abnormal mask, and an abnormal prompt is issued.
A photomask defect detection device, comprising:

The acquisition module is used to acquire the production-level electron beam exposure system file of the reticle;

A reference pattern determination module, configured to detect the mark of any pattern in the production-level electron beam exposure system file to obtain a reference pattern;

The comparison detection module is used to call the XOR operation function of the production-level electron beam exposure system to compare whether the pattern to be detected is the same as the reference pattern, and the pattern to be detected is a pattern repeated with the reference pattern.
The photomask defect detection device according to claim 8, wherein the comparison detection module comprises:

a coordinate book acquisition unit, configured to acquire the pattern coordinate book of the mask;

A coordinate book importing unit, configured to import the pattern coordinate book into the production-level electron beam exposure system;

The comparison detection unit is used for positioning the reference coordinates on the reference pattern, positioning the operation coordinates on the pattern to be detected, calling the XOR operation function of the production-level electron beam exposure system to perform the XOR operation, and comparing the pattern to be detected with the detected pattern. Whether the above reference pattern is the same.
The photomask defect detection device according to claim 9, wherein the comparison detection unit comprises:

The reference coordinate area generation subunit is used to extend the reference coordinates based on the origin of the coordinates for a preset distance to form a reference coordinate area;

a reference positioning subunit, configured to locate the reference coordinate area on the reference pattern;

The operation coordinate area generation subunit is used to extend the operation coordinates based on the coordinate origin to a preset distance to form an operation coordinate area;

The calculation positioning subunit is used for positioning the calculation coordinate area on the pattern to be detected.
The photomask defect detection device according to claim 9, wherein the comparison detection unit is specifically used for:

Subtracting each signature of the pattern to be detected from the signature corresponding to the reference pattern.
The photomask defect detection device according to any one of claims 8-11, wherein the photomask defect detection device further comprises:

The graphic data stream file conversion module is used to obtain the graphic data stream file of the reticle, and convert the graphic data stream file into the production-level electron beam exposure system file.
The photomask defect detection device according to any one of claims 8-11, wherein the photomask defect detection device further comprises:

The first prompting module is used to determine that the mask is a normal mask when the result of the XOR operation is 0, and to issue a no abnormality prompt.
The photomask defect detection device according to any one of claims 8-11, wherein the photomask defect detection device further comprises:

The second prompting module is configured to determine that the mask is an abnormal mask when the XOR operation result is 1, and issue an abnormal prompt.
An electronic device, comprising: a processor, a memory, and a program or instruction stored on the memory and operable on the processor, when the program or instruction is executed by the processor, the claims 1- 7. Steps of any one of the photomask defect detection method.
A readable storage medium, storing programs or instructions on the readable storage medium, and implementing the steps of the optical mask defect detection method according to any one of claims 1-7 when the program or instructions are executed by a processor.
A chip, the chip includes a processor and a communication interface, the communication interface is coupled to the processor, the processor is used to run programs or instructions, and realize the photomask according to any one of claims 1-7 The steps of the defect detection method.