CN102944983A - Method for improving key dimension measurement of pattern to be measured - Google Patents
Method for improving key dimension measurement of pattern to be measured Download PDFInfo
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- CN102944983A CN102944983A CN2012104967096A CN201210496709A CN102944983A CN 102944983 A CN102944983 A CN 102944983A CN 2012104967096 A CN2012104967096 A CN 2012104967096A CN 201210496709 A CN201210496709 A CN 201210496709A CN 102944983 A CN102944983 A CN 102944983A
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Abstract
A method for improving key dimension measurement of a pattern to be measured includes steps: 1 determining the shape of a positioning assisting picture which is at least formed by three independent positioning pictures respectively having information of 90-degree pictures in the horizontal direction and the vertical direction; 2 shifting the pattern to be measured and the positioning assisting picture which are arranged on an optical mask template to a photo-resistance layer through the exposure and development processes; 3 positioning the positioning assisting picture through a critical dimension scanning electron microscope (CDSEM); and 4 determining the pattern to be measured and performing key dimension measurement. The method for improving key dimension measurement of the pattern to be measured increases information of an edge reflection secondary electron beam by arranging the positioning assisting picture in a sparse picture zone of the optical mask template, is favorable for focusing and information identification of the positioning assisting picture, further increases measurement success rate of the pattern to be measured which especially includes contact hole patterns and through hole patterns, and improves processing stability.
Description
Technical field
The present invention relates to technical field of semiconductor device, relate in particular to a kind of method of improving the key dimension measurement of pattern to be measured.
Background technology
In the manufacture process of integrated circuit, generally speaking, at first photoresist is coated in crystal column surface; Then by light shield described photoresist is exposed; Carry out subsequently postexposure bake to change the physical property of described photoresist; The rear detection of developing at last.Whether the key step that detects after developing is that the critical size (Critical Dimension, CD) to photoetching agent pattern measures, up to specification to judge it.If up to specification, then carry out follow-up etching technics, and described photoetching agent pattern is transferred on the described wafer.
But along with the development of semiconductor fabrication, the demand of miniature sizes increases day by day, and critical size is more and more less.Because the variation of critical size has great impact to the characteristic of electronic component, therefore photoetching process must accurately be controlled the critical size of photoetching agent pattern, in order to avoid critical voltage and the line resistance change relevant with the pattern dimension variation cause the reduction of element quality and circuit performance.In addition, for the key stratum of contact hole, through hole and so on, because himself figure is hole, linearly measures figure to measure difficulty larger than other.Figure to be measured is sparse hole, if the registration figure condition choose improper, then make the registration figure the searching failure so that cause measuring unsuccessfully.And choose for the condition of registration figure, determining of focused condition is key factor.If the focusing graphical information of registration figure is bad, will directly causes registering figure and seek unsuccessfully.Therefore, how effectively to improve registration figure focused condition and become one of study hotspot of this area.
So for the problem that prior art exists, this case designer relies on the industry experience for many years of being engaged in, the active research improvement is so there has been a kind of method of improving the key dimension measurement of pattern to be measured of the present invention.
Summary of the invention
The present invention be directed in the prior art, traditional pattern to be measured is the hole type, and it is large to measure difficulty, and the condition of registration figure chooses improperly, is easy to cause measuring unsuccessfully wait defective that a kind of method of improving the key dimension measurement of pattern to be measured is provided.
In order to address the above problem, the invention provides a kind of method of improving the key dimension measurement of pattern to be measured, described method comprises:
Execution in step S1: determine the shape of auxiliary positioning figure, described auxiliary positioning figure comprises that at least having respectively the location-independent figure that horizontal direction and vertical direction be 90 ° of graphical informations by three consists of;
Execution in step S2: by exposure and developing process the pattern described to be measured on the photomask and described auxiliary positioning figure are transferred to described photoresist layer, described auxiliary positioning figure correspondence is arranged on the sparse graphics field of described photomask;
Execution in step S3: by CDSEM, the auxiliary positioning figure is positioned;
Execution in step S4: determine pattern to be measured, and carry out critical size and measure.
Alternatively, described pattern to be measured is one of them of contact hole pattern, through-hole pattern, perhaps its combination.
Alternatively, the zone of the described sparse graphics field pitch of holes d1 〉=2.5 μ m that are contact hole pattern or described through-hole pattern.
Alternatively, the ratio of the corresponding size of the horizontal direction size of described auxiliary positioning figure and described vertical direction size and described pattern to be measured is 1:1～5:1.
Alternatively, the minor increment d2 between described auxiliary positioning figure and the described figure to be measured is that described auxiliary positioning figure and described figure to be measured do not produce the distance of interference.
Alternatively, pattern to be measured in the described photoresist layer is corresponding with pattern to be measured in the described photomask, auxiliary positioning figure in the described photoresist layer is corresponding with auxiliary positioning figure in the described photomask, and the sparse graphics field in the described photoresist layer is corresponding with the sparse graphics field in the described photomask.
Alternatively, described definite pattern to be measured, and carry out method that critical size measures for by the relative distance between pattern to be measured and the described auxiliary positioning figure described pattern to be measured is positioned, and the critical size by the accurate measurement of the relative distance between pattern to be measured and described auxiliary positioning figure pattern to be measured.
Alternatively, the described method of determining pattern to be measured comprises described auxiliary positioning figure as focus point, and then determines described pattern to be measured.
In sum, the method of the key dimension measurement of improvement of the present invention pattern to be measured, by the sparse figure location at described figure to be measured described auxiliary positioning figure is set, and by the exposure and developing process the pattern described to be measured on the described photomask and described auxiliary positioning figure are transferred to described photoresist layer, not only increased the information of edge reflections secondary beam, be beneficial to focusing and the information identification of described auxiliary positioning figure, and increased pattern to be measured, especially comprise contact hole pattern, the success ratio that through-hole pattern measures has further improved the stability of processing procedure.
Description of drawings
Figure 1 shows that the present invention improves the process flow diagram of method of the key dimension measurement of pattern to be measured;
Figure 2 shows that the structural representation of the sparse graphics field of photomask of the present invention;
Figure 3 shows that the distributed architecture synoptic diagram of pattern to be measured and auxiliary positioning figure.
Embodiment
By the technology contents, the structural attitude that describe the invention in detail, reached purpose and effect, below in conjunction with embodiment and cooperate accompanying drawing to be described in detail.
See also Fig. 1, Figure 1 shows that the present invention improves the process flow diagram of method of the key dimension measurement of pattern to be measured.The method of the key dimension measurement of described improvement pattern to be measured may further comprise the steps:
Execution in step S1: determine the shape of auxiliary positioning figure, described auxiliary positioning figure comprises that at least having respectively the location-independent figure that horizontal direction and vertical direction be 90 ° of graphical informations by three consists of;
Execution in step S2: the pattern described to be measured on the photomask and described auxiliary positioning figure are transferred to described photoresist layer by exposure and developing process;
Wherein, described pattern to be measured includes but not limited to one of them of contact hole pattern, through-hole pattern, perhaps its combination.In the present invention, for the ease of setting forth the relation between each unit, the assembly, the pitch of holes d of the untired described contact hole pattern of definition or described through-hole pattern
1The zone of 〉=2.5 μ m is sparse graphics field.Minor increment d between described auxiliary positioning figure and the described figure to be measured
2Not producing interference with described auxiliary positioning figure and described figure to be measured is advisable.Described auxiliary positioning figure correspondence is arranged on the sparse graphics field of described photomask.Apparently, the pattern to be measured in the described photoresist layer is corresponding with pattern to be measured in the described photomask; Auxiliary positioning figure in the described photoresist layer is corresponding with auxiliary positioning figure in the described photomask; Sparse graphics field in the described photoresist layer is corresponding with the sparse graphics field in the described photomask.The ratio of the horizontal direction size of described auxiliary positioning figure and the corresponding size of described vertical direction size and described pattern to be measured is 1:1～5:1.
Execution in step S3: by CDSEM, the auxiliary positioning figure is positioned; Described auxiliary positioning graphics shape is simple, be easy to identification; Simultaneously, described auxiliary positioning figure comprises that at least having respectively the location-independent figure that horizontal direction and vertical direction be 90 ° of graphical informations by three consists of, increase the information of edge reflections secondary beam, thereby more be conducive to described auxiliary positioning figure focusing and information identification.
Execution in step S4: determine pattern to be measured, and carry out critical size and measure.Particularly, when the critical size of described pattern to be measured is measured, not only can described pattern to be measured be positioned by the relative distance between pattern to be measured and the described auxiliary positioning figure, but also can be by the accurate critical size that measures pattern to be measured of the relative distance between pattern to be measured and the described auxiliary positioning figure.More importantly, using described CDSEM that described pattern to be measured is carried out in the during focusing, can be with described auxiliary positioning figure as focus point, and then protect described pattern to be measured.
See also Fig. 2, Fig. 3, and in conjunction with consulting Fig. 1, Figure 2 shows that the structural representation of the sparse graphics field of photomask of the present invention.Figure 3 shows that the distributed architecture synoptic diagram of pattern to be measured and auxiliary positioning figure.As the specific embodiment of the present invention, be convenient to intuitively set forth the present invention's technical scheme, the concrete numerical value of enumerating in described embodiment should not be considered as the restriction to technical solution of the present invention.The method of the key dimension measurement of described improvement pattern to be measured may further comprise the steps:
Execution in step S1: determine the shape of auxiliary positioning figure 1, described auxiliary positioning figure 1 comprises that at least having respectively the location-independent figure 11 that horizontal direction and vertical direction be 90 ° of graphical informations by three consists of;
Execution in step S2: the pattern 2 described to be measured on the photomask 4 and described auxiliary positioning figure 1 are transferred to described photoresist layer 3 by exposure and developing process;
Wherein, described pattern 2 to be measured includes but not limited to one of them of contact hole pattern, through-hole pattern, perhaps its combination.In the present invention, for the ease of setting forth the relation between each unit, the assembly, the pitch of holes d of the untired described contact hole pattern of definition or described through-hole pattern
1The zone of 〉=2.5 μ m is sparse graphics field 41.Minor increment d between described auxiliary positioning figure 1 and the described figure to be measured 2
2Not producing interference with described auxiliary positioning figure 1 and described figure 2 to be measured is advisable.Described auxiliary positioning figure 1 correspondence is arranged on the sparse graphics field 41 of described photomask 4.The ratio of the corresponding size of the horizontal direction size of described auxiliary positioning figure 1 and described vertical direction size and described pattern to be measured 2 is 1:1～5:1.
Execution in step S3: by CDSEM, auxiliary positioning figure 1 is positioned; Described auxiliary positioning figure 1 simple shape, be easy to the identification; Simultaneously, described auxiliary positioning figure 1 comprises that at least having respectively the location-independent figure 11 that horizontal direction and vertical direction be 90 ° of graphical informations by three consists of, increase the information of edge reflections secondary beam, thereby more be conducive to described auxiliary positioning figure focusing and information identification.
Execution in step S4: determine pattern 2 to be measured, and carry out critical size and measure.Particularly, when the critical size of described pattern 2 to be measured is measured, not only can described pattern to be measured be positioned by the relative distance between pattern 2 to be measured and the described auxiliary positioning figure 1, but also can be by the accurate critical size that measures pattern 2 to be measured of the relative distance between pattern 2 to be measured and the described auxiliary positioning figure 1.In addition, using described CDSEM that described pattern 2 to be measured is carried out in the during focusing, can be with described auxiliary positioning figure 1 as focus point, and then protect described pattern to be measured 2.
Significantly, the method of the key dimension measurement of improvement of the present invention pattern to be measured, by the sparse graphics field 41 at described photomask 4 described auxiliary positioning figure 1 is set, and by the exposure and developing process the pattern 2 described to be measured on the described photomask 4 and described auxiliary positioning figure 1 are transferred to described photoresist layer 3, not only increased the information of edge reflections secondary beam, be beneficial to focusing and the information identification of described auxiliary positioning figure 1, and increased pattern 2 to be measured, especially comprise contact hole pattern, the success ratio that through-hole pattern measures has further improved the stability of processing procedure.
In sum, the method of the key dimension measurement of improvement of the present invention pattern to be measured, by the sparse figure location at described figure to be measured described auxiliary positioning figure is set, and by the exposure and developing process the pattern described to be measured on the described photomask and described auxiliary positioning figure are transferred to described photoresist layer, not only increased the information of edge reflections secondary beam, be beneficial to focusing and the information identification of described auxiliary positioning figure, and increased pattern to be measured, especially comprise contact hole pattern, the success ratio that through-hole pattern measures has further improved the stability of processing procedure.
Those skilled in the art all should be appreciated that, in the situation that does not break away from the spirit or scope of the present invention, can carry out various modifications and variations to the present invention.Thereby, if when any modification or modification fall in the protection domain of appended claims and equivalent, think that the present invention contains these modifications and modification.
Claims (8)
1. method of improving the key dimension measurement of pattern to be measured is characterized in that described method comprises:
Execution in step S1: determine the shape of auxiliary positioning figure, described auxiliary positioning figure comprises that at least having respectively the location-independent figure that horizontal direction and vertical direction be 90 ° of graphical informations by three consists of;
Execution in step S2: by exposure and developing process the pattern described to be measured on the photomask and described auxiliary positioning figure are transferred to described photoresist layer, described auxiliary positioning figure correspondence is arranged on the sparse graphics field of described photomask;
Execution in step S3: by CDSEM, the auxiliary positioning figure is positioned;
Execution in step S4: determine pattern to be measured, and carry out critical size and measure.
2. the method for the key dimension measurement of improvement as claimed in claim 1 pattern to be measured is characterized in that, described pattern to be measured is one of them of contact hole pattern, through-hole pattern, perhaps its combination.
3. the method for the key dimension measurement of improvement as claimed in claim 2 pattern to be measured is characterized in that, the zone of the pitch of holes d1 that described sparse graphics field is contact hole pattern or described through-hole pattern 〉=2.5 μ m.
4. the method for the key dimension measurement of improvement as claimed in claim 2 pattern to be measured is characterized in that, the ratio of the horizontal direction size of described auxiliary positioning figure and the corresponding size of described vertical direction size and described pattern to be measured is 1:1～5:1.
5. the method for the key dimension measurement of improvement as claimed in claim 2 pattern to be measured is characterized in that, the minor increment d2 between described auxiliary positioning figure and the described figure to be measured is that described auxiliary positioning figure and described figure to be measured do not produce the distance of interference.
6. the method for the key dimension measurement of improvement as claimed in claim 1 pattern to be measured, it is characterized in that, pattern to be measured in the described photoresist layer is corresponding with pattern to be measured in the described photomask, auxiliary positioning figure in the described photoresist layer is corresponding with auxiliary positioning figure in the described photomask, and the sparse graphics field in the described photoresist layer is corresponding with the sparse graphics field in the described photomask.
7. the method for the key dimension measurement of improvement as claimed in claim 1 pattern to be measured, it is characterized in that, described definite pattern to be measured, and carry out method that critical size measures for by the relative distance between pattern to be measured and the described auxiliary positioning figure described pattern to be measured is positioned, and the critical size by the accurate measurement of the relative distance between pattern to be measured and described auxiliary positioning figure pattern to be measured.
8. the method for the key dimension measurement of improvement as claimed in claim 1 pattern to be measured is characterized in that, the described method of determining pattern to be measured comprises described auxiliary positioning figure as focus point, and then determines described pattern to be measured.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103279016A (en) * | 2013-05-31 | 2013-09-04 | 上海华力微电子有限公司 | Method for improving overlay measurement precision |
| CN104360691A (en) * | 2014-11-17 | 2015-02-18 | 上海华力微电子有限公司 | Contact hole critical size control method |
| CN105628722A (en) * | 2014-10-29 | 2016-06-01 | 中芯国际集成电路制造(上海)有限公司 | Measurement structure and method for measuring measurement structure |
| CN106783659A (en) * | 2016-12-23 | 2017-05-31 | 武汉新芯集成电路制造有限公司 | The method of graphics test structure and preparation method thereof, measurement pattern size |
| US9995648B2 (en) | 2014-11-10 | 2018-06-12 | Samsung Electronics Co., Ltd. | Optical measurement system and method for measuring critical dimension of nanostructure |
| CN109540050A (en) * | 2017-09-22 | 2019-03-29 | 三星电子株式会社 | Critical size measuring system and the method for measuring critical size using it |
| CN118365692A (en) * | 2024-06-14 | 2024-07-19 | 深圳市辰中科技有限公司 | Method and apparatus for measuring critical dimension of repeated graphic unit of memory |
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| CN102437068A (en) * | 2011-11-17 | 2012-05-02 | 上海华力微电子有限公司 | Hole measurement pattern and hole measurement method |
| CN102435154A (en) * | 2011-09-15 | 2012-05-02 | 上海华力微电子有限公司 | Shape design of novel critical dimension monitoring structure |
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| CN102437146A (en) * | 2011-08-17 | 2012-05-02 | 上海华力微电子有限公司 | Optimization method of through hole key size detection territory |
| CN102435154A (en) * | 2011-09-15 | 2012-05-02 | 上海华力微电子有限公司 | Shape design of novel critical dimension monitoring structure |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103279016A (en) * | 2013-05-31 | 2013-09-04 | 上海华力微电子有限公司 | Method for improving overlay measurement precision |
| CN103279016B (en) * | 2013-05-31 | 2017-03-01 | 上海华力微电子有限公司 | A kind of method improving overlay measurement precision |
| CN105628722B (en) * | 2014-10-29 | 2019-01-08 | 中芯国际集成电路制造(上海)有限公司 | Measurement structure and the measurement method that measurement structure is measured |
| CN105628722A (en) * | 2014-10-29 | 2016-06-01 | 中芯国际集成电路制造(上海)有限公司 | Measurement structure and method for measuring measurement structure |
| US9995648B2 (en) | 2014-11-10 | 2018-06-12 | Samsung Electronics Co., Ltd. | Optical measurement system and method for measuring critical dimension of nanostructure |
| CN104360691B (en) * | 2014-11-17 | 2017-03-01 | 上海华力微电子有限公司 | A kind of control method of critical dimension of contact hole |
| CN104360691A (en) * | 2014-11-17 | 2015-02-18 | 上海华力微电子有限公司 | Contact hole critical size control method |
| CN106783659A (en) * | 2016-12-23 | 2017-05-31 | 武汉新芯集成电路制造有限公司 | The method of graphics test structure and preparation method thereof, measurement pattern size |
| CN106783659B (en) * | 2016-12-23 | 2019-06-28 | 武汉新芯集成电路制造有限公司 | The method of graphics test structure and preparation method thereof, measurement pattern size |
| CN109540050A (en) * | 2017-09-22 | 2019-03-29 | 三星电子株式会社 | Critical size measuring system and the method for measuring critical size using it |
| CN109540050B (en) * | 2017-09-22 | 2022-05-24 | 三星电子株式会社 | Critical dimension measuring system and method for measuring critical dimension using the same |
| US11397380B2 (en) | 2017-09-22 | 2022-07-26 | Samsung Electronics Co., Ltd. | Critical dimension measurement system and method of measuring critical dimensions using same |
| CN118365692A (en) * | 2024-06-14 | 2024-07-19 | 深圳市辰中科技有限公司 | Method and apparatus for measuring critical dimension of repeated graphic unit of memory |
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Application publication date: 20130227 |