TWI433246B - Smart defect review for semiconductor integrated - Google Patents

Smart defect review for semiconductor integrated Download PDF

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TWI433246B
TWI433246B TW98101647A TW98101647A TWI433246B TW I433246 B TWI433246 B TW I433246B TW 98101647 A TW98101647 A TW 98101647A TW 98101647 A TW98101647 A TW 98101647A TW I433246 B TWI433246 B TW I433246B
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integrated circuit
defect
image
component
design database
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TW200937554A (en
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Y Jack Jau
Joe Wang
Wei Fang
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Hermes Microvision Inc
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Description

半導體積體電路之缺陷複查裝置Semiconductor integrated circuit defect review device

本發明係關於一種應用在半導體積體電路製造過程中的缺陷複查採樣、缺陷複查方法及缺陷分類上之方法,及基於此方法所設計的裝置。本裝置與方法可用於檢驗半導體晶圓上的缺陷或積體電路之印刷光罩上的缺陷。The present invention relates to a defect review sampling, a defect review method, and a defect classification method applied in a semiconductor integrated circuit manufacturing process, and a device designed based on the method. The apparatus and method can be used to inspect defects on a semiconductor wafer or defects on a printed reticle of an integrated circuit.

隨著半導體積體電路線寬與結構設計之縮小、300mm的晶圓成為普遍使用的尺寸、以及製程控制窗口逐漸變小,其結果是由檢驗機台所偵測到缺陷數目隨之增加。特別是那些處於開發早期或是剛進入量產階段之元件,缺陷數量非常之高。As the line width and structure design of the semiconductor integrated circuit shrinks, the 300 mm wafer becomes a commonly used size, and the process control window becomes smaller, the result is that the number of defects detected by the inspection machine increases. Especially for those components that are in the early stages of development or just entering the mass production stage, the number of defects is very high.

缺陷通常是藉由所謂缺陷檢驗機台這一類的儀器偵測。圖1為典型的缺陷複查裝置100之簡圖。待複查晶圓及先前檢測的缺陷檔案自載入單元102載入,接下來晶圓之定位、晶粒的座標及缺陷相對位置的偏位均於取像單元104中校準。取像條件106及複查取樣計畫108由主電腦110提供。由取像單元104拍攝缺陷影像與同一位置之參考影像一起在缺陷定位單元112中比對,在缺陷定位單元112中可分析缺陷影像每一位置的實際座標。接著,將此位置資訊迴饋到取像單元104以取得此位置之高解析度及高倍率的缺陷影像,再將缺陷影像提供給缺陷分類及資料輸出單元114進行缺陷分類。最後,將先前檢測得到的缺陷檔案名稱更換為缺陷分類代碼,並與此高解析度及高倍率缺陷影像一起送到資料庫116儲存。Defects are usually detected by instruments such as the so-called defect inspection machine. 1 is a simplified diagram of a typical defect review apparatus 100. The defect to be reviewed and the previously detected defect file are loaded from the loading unit 102, and then the positioning of the wafer, the coordinates of the die, and the offset of the relative position of the defect are all calibrated in the image capturing unit 104. The image capture condition 106 and the review sample plan 108 are provided by the host computer 110. The defective image captured by the image capturing unit 104 is compared with the reference image of the same position in the defect locating unit 112, and the actual coordinate of each position of the defective image can be analyzed in the defect locating unit 112. Then, the position information is fed back to the image capturing unit 104 to obtain the high resolution and high magnification defect images of the position, and then the defect image is provided to the defect classification and data output unit 114 for defect classification. Finally, the previously detected defect file name is replaced with the defect classification code, and sent to the database 116 for storage together with the high resolution and high magnification defect image.

如圖1所示,典型的自動缺陷複查程序包括下列步驟:(1)載入待複查晶圓及先前的檢驗結果檔案(缺陷資料是由檢驗機台所得);(2)校準晶圓及欲複查之晶粒座標;(3)缺陷於晶粒相對位置的偏位修正;(4)電子束檢測條件設定;(5)設定複查缺陷取樣標準;(6)自動尋找缺陷位址的方法;(7)設定複查取像條件;(8)缺陷分類,其可為全自動、半自動、或是手動分類;(9)設定資料輸出;以及(10)卸載晶圓。As shown in Figure 1, a typical automatic defect review procedure includes the following steps: (1) loading the wafer to be reviewed and the previous inspection result file (the defect data is obtained by the inspection machine); (2) calibrating the wafer and desire Review the grain coordinates; (3) Deviation correction of the defect relative position of the grain; (4) Setting of the electron beam detection condition; (5) Setting the sampling standard for reviewing the defect; (6) Automatically finding the method of the defect address; 7) setting review image retrieval conditions; (8) defect classification, which can be fully automatic, semi-automatic, or manual classification; (9) setting data output; and (10) unloading wafers.

逐一複查由檢驗機台所挑選的全部缺陷相當地耗時,並且多半是非必要的。關於步驟5,在半導體生產線監控之中最常見的做法是由一次檢驗結果中隨機取樣50或100個缺陷進行複查。更加複雜的取樣方法可包括藉由百分比、缺陷大小、缺陷分類(大致分格(rough bin))、以及叢集缺陷等缺陷中隨機選取。上述取樣方法的共同問題為機台使用者不能避免複查位於「非重要區域或是非線上監控者所關心的位置」的缺陷。檢視不重要之非關鍵缺陷浪費了寶貴的機台時間。It is quite time consuming to review all the defects selected by the inspection machine one by one, and most of them are unnecessary. Regarding step 5, the most common practice in semiconductor production line monitoring is to review 50 or 100 defects randomly from one test result. More sophisticated sampling methods may include random selection of defects such as percentage, defect size, defect classification (rough bin), and cluster defects. A common problem with the above sampling methods is that the machine user cannot avoid reviewing defects located in "non-critical areas or locations where the non-line monitors are concerned." Examining non-critical defects that are not important wastes valuable machine time.

上述方法僅能定位隨機出現的缺陷而難以界定系統性缺陷(例如重覆性缺陷:如光罩缺陷),因為做為參考的鄰近晶粒中很可能也含有同樣或相似的缺陷,因此難以在受檢晶粒的圖像與參考晶粒之圖像比對中,發現重複性的缺陷,所以要用原始設計資料庫的資訊。再者,缺陷複查機台,特別是電子束(e-beam)缺陷複查機台的花費很大(每座通常超過二百萬美金)。所以對自動缺陷複查機台之處理速度要求愈來愈高,因此,智慧型的缺陷複查方法便愈形必要,而本發明可協助達成上述要求。The above method can only locate randomly occurring defects and it is difficult to define systemic defects (such as repetitive defects: such as mask defects), because adjacent grains that are used as a reference may also contain the same or similar defects, so it is difficult to The image of the examined die is compared with the image of the reference die, and repetitive defects are found, so the information of the original design database is used. Furthermore, defect review machines, especially electron beam (e-beam) defect review machines, are expensive (each typically exceeds $2 million). Therefore, the processing speed of the automatic defect review machine is becoming higher and higher. Therefore, the intelligent defect review method becomes more and more necessary, and the present invention can assist in achieving the above requirements.

【相關申請案的交互參照】[Reciprocal Reference of Related Applications]

本案主張2007年2月2日申請,名稱為「半導體積體電路之智慧型缺陷複查(Smart Defect Review For Semiconductor Integrated Circuit)」的第60/887,901號美國臨時專利申請案的優先權,以將其內容併入本案作為參考。The present application claims the priority of US Provisional Patent Application No. 60/887,901, entitled "Smart Defect Review For Semiconductor Integrated Circuit", filed on February 2, 2007, to The content is incorporated into this case for reference.

本發明之目的之一為提供一種在半導體積體電路製造過程中自動缺陷複查採樣、及缺陷分類之方法,及基於此方法所設計的裝置。本裝置與方法可用於檢驗半導體晶圓上的缺陷或積體電路之印刷光罩上的缺陷。上述及其他目的係藉由比對缺陷的複查圖像與經由智慧型取樣過濾器所拾取之缺陷位置之參考圖像所達成。It is an object of the present invention to provide an automatic defect review sampling and defect classification method in a semiconductor integrated circuit manufacturing process, and a device designed based on the method. The apparatus and method can be used to inspect defects on a semiconductor wafer or defects on a printed reticle of an integrated circuit. The above and other objects are achieved by comparing the image of the defect with the reference image of the defect location picked up by the smart sampling filter.

在一實施例中,本發明揭示一種叢集式電腦系統,此系統基於高速網路能提供資料快取器並節省運算時間及記憶體。在另一實施例中,本發明揭示一種智慧型複查取樣過濾器,其可自動尋找「敏感區域」並選取「敏感區域」附近之可能缺陷位置以做為複查樣品。此項資訊亦可協助將缺陷分類。In one embodiment, the present invention discloses a cluster computer system that provides a data cache based on a high speed network and saves computation time and memory. In another embodiment, the present invention discloses an intelligent review sampling filter that automatically searches for a "sensitive area" and selects a possible defect location near the "sensitive area" as a review sample. This information can also help to classify defects.

以下藉由具體實施例配合所附的圖式詳加說明,當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。The purpose, technical contents, features, and effects achieved by the present invention will become more apparent from the detailed description of the appended claims.

在此將依據本發明之特定實施例進行詳細敘述。這些實施例所舉的例子以所附的圖式說明。應可理解的是,當本發明連同這些特定實施進行說明,其並非要將本發明的範圍限縮到這些實施例。相反地,是要包含由所附請求項所定義、可在本發明的精神及範圍內所包括的替代方案、修改、及均等物。在以下說明之中,將許多特定細節依序陳述,以使本發明可被徹底了解。本發明在缺少部分或全部的上述細節仍可實施。另一方面,未對習知的步驟操作詳細敘述以免對本發明造成不必要的曲解。This will be described in detail in accordance with the specific embodiments of the invention. Examples of these embodiments are illustrated by the accompanying drawings. It is to be understood that the invention is not intended to limit the scope of the invention Rather, the alternatives, modifications, and equivalents may be included within the spirit and scope of the invention as defined by the appended claims. In the following description, numerous specific details are set forth in order to provide a thorough understanding. The invention may be practiced in the absence of some or all of the above details. On the other hand, the conventional steps are not described in detail to avoid unnecessary misinterpretation of the present invention.

本發明藉由積體電路設計資料庫之協助以改善步驟5(設定複查缺陷取樣標準)、步驟6(自動尋找缺陷位址的方法)以及步驟8(缺陷分類)的績效。The present invention assists in improving the performance of step 5 (set review defect sampling criteria), step 6 (method of automatically finding defective addresses), and step 8 (defect classification) with the assistance of an integrated circuit design database.

本發明之一實施態樣為智慧型複查取樣過濾器200(圖2)。圖2為一實施例顯示智慧型複查取樣過濾器200之簡圖。元件座標可由位置摘錄處理器204自積體電路設計資料庫202中取得,並自動建立易發生缺陷之「敏感區域」。此「敏感區域」亦可於初步檢視晶圓之影像後,以人工方式設立。結合「敏感區域」及先前檢驗結果中的缺陷分佈資訊,可產生元件之複查位置計畫206,並且傳送到電腦主機中的複查取樣單元208。One embodiment of the present invention is a smart review sampling filter 200 (Fig. 2). 2 is a simplified diagram showing an intelligent review sampling filter 200 in accordance with an embodiment. The component coordinates can be retrieved from the integrated circuit design database 202 by the location extract processor 204, and a "sensitive area" susceptible to defects is automatically created. This "sensitive area" can also be manually established after initially viewing the image of the wafer. In conjunction with the "sensitive area" and the defect distribution information in the previous inspection results, a component review location plan 206 can be generated and transmitted to the review sampling unit 208 in the host computer.

全部先前檢驗結果發現的缺陷都經過位置摘錄處理器204取得元件座標。經智慧型複查取樣過濾器200分析後,可以決定要複查之缺陷的取樣位置。智慧型複查取樣過濾器200與缺陷複查位置計畫兩者皆於建立檢驗程序時確立。下列項目可藉由建立智慧型複查取樣過濾器200後達成:Defects found by all previous inspection results are obtained by the location extract processor 204. After analysis by the smart review sampling filter 200, the sampling position of the defect to be reviewed can be determined. Both the smart review sampling filter 200 and the defect review position plan are established when the inspection procedure is established. The following items can be achieved by establishing a smart review sampling filter 200:

(1)機台使用者可避免浪費寶貴時間於複查位於不重要地區的缺陷,例如切割線(晶粒之間的空間)上的缺陷。使用者可以藉由設定複查取樣條件,使機台只複查定義為敏感區域內的缺陷(例如含有高縱橫比(HAR)之接點挖孔的區域)。(1) Machine users can avoid wasting valuable time reviewing defects in unimportant areas, such as defects on the cutting line (space between the grains). By setting the review sampling conditions, the user can only review the defects defined as sensitive areas (for example, areas with high aspect ratio (HAR) contact holes).

(2)可顯示位於特定元件上的缺陷分佈(例如靜態隨機存取記憶體(Static Random Access Memory,SRAM)上的缺陷分佈),以協助使用者評估晶圓上的積體電路製程。(2) The distribution of defects on a particular component (such as the distribution of defects on a Static Random Access Memory (SRAM)) can be displayed to assist the user in evaluating the integrated circuit process on the wafer.

(3)可提供在特定區域或是元件上的缺陷密度,例如SRAM上的缺陷密度。(3) It is possible to provide defect density in a specific area or component, such as defect density on SRAM.

(4)可能衝擊到後繼電路層的缺陷,將被標示並且可對其取樣以進行複查。(4) Defects that may impact subsequent circuit layers, will be flagged and may be sampled for review.

當設計線寬低至32nm或是更小時,晶圓積體電路設計資料庫會變得非常地巨大,有時甚至會到達200G以上的資料。本發明的一實施態樣為基於叢集電腦結構的一高速資料快取器。如圖3所示,積體電路設計資料庫將儲存於各個獨立電腦,再由一高速網路304(例如無限寬頻(Infiniband))與主機電腦連結。When the design line width is as low as 32 nm or less, the wafer integrated circuit design database becomes very large, and sometimes it can reach more than 200G. One embodiment of the present invention is a high speed data cacher based on a cluster computer architecture. As shown in Figure 3, the integrated circuit design database will be stored in separate computers, and then connected to the host computer by a high-speed network 304 (such as Infiniband).

請接續參考圖3,圖3為一叢集式電腦的積體電路設計資料庫300。可將積體電路設計資料庫300根據位置座標分別儲存於獨立的電腦302a-302n中,每一台獨立的電腦302a-302n都由高速網路304連接在一起。缺陷的位置資訊依座標分別輸入相關的電腦302a-n來反應此缺陷之位置,並根據座標輸出積體電路的設計配置資料。基於上述結構,吾人可以非常快速處理任何記憶容量的積體電路原始設計資料庫。每部獨立的電腦302a-n僅需處理小量區域的設計資料。Please refer to FIG. 3 in succession. FIG. 3 is an integrated circuit design database 300 of a cluster computer. The integrated circuit design database 300 can be stored in separate computers 302a-302n according to location coordinates, and each of the individual computers 302a-302n is connected by a high speed network 304. The position information of the defect is input to the relevant computer 302a-n according to the coordinates to reflect the position of the defect, and the design configuration data of the integrated circuit is output according to the coordinate. Based on the above structure, we can process the original design database of the integrated circuit of any memory capacity very quickly. Each individual computer 302a-n only needs to process design information for a small area.

基於所複查的缺陷座標資訊,每部電腦僅快取於缺陷位置周邊的積體電路設計資料,而不需將全部的積體電路設計資料庫載入到運算記憶體中。Based on the reviewed defect coordinate information, each computer only caches the integrated circuit design data around the defect location, and does not need to load all the integrated circuit design database into the arithmetic memory.

關於步驟6,圖4顯示目前複查機台最普遍的運用方式。圖4為缺陷複查機台中典型的自動缺陷定位單元400之簡圖。缺陷影像402及其取自參考晶粒中同樣位置的參考圖像404由圖像比對及缺陷定位單元406進行圖像比對處理,以決定缺陷為不完整之配置圖案或是外來之異物,其中參考晶粒是標準晶粒或是含缺陷晶粒鄰近的一、二個晶粒。此比對程序可得到缺陷影像中的切確缺陷位置座標。將此座標資訊迴饋到顯微鏡408以取得此座標之更高倍數放大影像,用以進行詳細的缺陷分類及導致缺陷生成原因的研究。With regard to step 6, Figure 4 shows the most common application of the current review machine. 4 is a simplified diagram of a typical automatic defect locating unit 400 in a defect review machine. The defect image 402 and its reference image 404 taken from the same position in the reference die are image-aligned by the image alignment and defect locating unit 406 to determine whether the defect is an incomplete configuration pattern or a foreign object. The reference crystal grain is a standard crystal grain or one or two crystal grains adjacent to the defect crystal grain. This alignment program obtains the coordinates of the exact defect locations in the defective image. This coordinate information is fed back to the microscope 408 to obtain a higher magnification image of the coordinate for detailed defect classification and research leading to the cause of the defect.

使用如圖4所示之程序做自動缺陷定位(automatic defect location,ADL)時最常見的困難為比對過程耗費太多時間。為檢視一處缺陷,通常需要移動樣品台兩次(檢視缺陷及其參考晶粒之同一位置)‧並拍攝三張影像(低倍率之參考影像、低倍率之缺陷影像、高倍率之缺陷影像)。The most common difficulty when using the program shown in Figure 4 for automatic defect location (ADL) is that the alignment process takes too much time. In order to view a defect, it is usually necessary to move the sample stage twice (to view the same position of the defect and its reference die) ‧ and take three images (low-rate reference image, low-magnification defect image, high-magnification defect image) .

本發明的另一要素為通用缺陷座標定位(general defect locating,GDL),不但可定位無出現規律的缺陷,並且也可自動定位有出現規律的缺陷。圖5顯示GDL的定位方法,其特點是將缺陷影像與來自資料庫之積體電路設計配置圖像比對,以定位出缺陷之切確座標位置。圖5為通用缺陷座標定位單元500之簡圖。在自動通用缺陷複查工具502中比對的圖像可能是常規的缺陷影像504與其他晶粒(標準晶粒或鄰近晶粒)於同一位置所拍攝之影像。在此情形中影像轉換器一508及影像轉換器二510可略過不用。Another element of the present invention is general defect locating (GDL), which not only locates defects without regularity, but also automatically locates defects with regularity. FIG. 5 shows a method for locating a GDL, which is characterized by comparing a defect image with an integrated circuit design configuration image from a database to locate a corrected coordinate position of the defect. FIG. 5 is a simplified diagram of a general defect coordinate positioning unit 500. The image that is aligned in the automated general defect review tool 502 may be an image taken at the same location as the conventional defect image 504 and other dies (standard dies or adjacent dies). In this case, the image converter 508 and the image converter 510 can be skipped.

然而,當待複查之缺陷影像屬於一複雜的元件組合之線路配置,而原始積體電路設計資料庫又無現存之同一位置之配置影像時,可以用影像轉換器將設計資料庫中,各相關晶粒或元件之部分圖像分別擷取出來,組成此複雜之待測線路配置之對比參考圖像,再據以比對出複查之缺陷的相對位置座標。另一方面,亦可將複查之缺陷真實影像加以調整,成為設計資料庫中已存在之配置圖像,再據以比對出缺陷的相對位置座標。However, when the defect image to be reviewed belongs to a complicated component combination line configuration, and the original integrated circuit design database has no existing configuration image at the same position, the image converter can be used to design the database. Part of the image of the die or component is extracted separately to form a comparative reference image of the complex circuit configuration to be tested, and then the relative position coordinates of the defect are compared. On the other hand, the real image of the defect can be adjusted to become the existing configuration image in the design database, and then the relative position coordinates of the defect are compared.

因此,若比對的圖像是經過影像處理/轉換過的缺陷影像及資料庫中同一位置經過影像處理/轉換過的影像的話;則影像轉換器一508是用來將積體電路設計資料庫中之資料506轉換為影像,而影像轉換器二510是用以將由顯微鏡所拍攝的真實影像轉換為可與積體電路設計資料庫影像比對的影像。Therefore, if the compared image is an image processed/converted defect image and an image processed/converted image at the same position in the database; the image converter 508 is used to integrate the integrated circuit design database. The data 506 is converted into an image, and the image converter 510 is used to convert the real image taken by the microscope into an image that can be compared with the integrated circuit design database image.

藉由此比對方法,可以克服兩項現行缺陷複查機台所普遍存在的問題。By means of this comparison method, the problems common to the two current defect review machines can be overcome.

(1)本發明所提出的方法,樣品台在複查缺陷時可以移動較少次數,因此,使用本方法可以增加處理速度。(1) According to the method proposed by the present invention, the sample stage can be moved a small number of times when the defect is reviewed, and therefore, the processing speed can be increased by using the method.

(2)轉換自積體電路原始設計資料庫的影像不會因為製程之細微變異或製造時產生了重覆性缺陷(如光罩缺陷)而改變了比對結果的正確性。依據本發明設計之複查系統及方法提供了經由晶粒與積體電路資料庫之直接比對,建構缺陷檔案供複查之能力。(2) The image converted from the original design database of the integrated circuit does not change the correctness of the comparison result due to the slight variation of the process or the occurrence of repeated defects (such as mask defects) during manufacturing. The review system and method designed in accordance with the present invention provide a direct comparison of the die and the integrated circuit database to construct a defect file for review.

關於步驟8,由圖6所示,智慧型複查取樣過濾器提供使用者依據缺陷所在位置對缺陷自動分類的選擇。圖6為依據本發明之自動型通用缺陷複查工具600之簡圖。與一般的缺陷複查裝置相似之處為:待檢晶圓及先前檢測缺陷檔案自載入單元102載入;接下來於取像單元104中完成校準晶圓、晶粒原點座標及缺陷相對位置的偏位修正。自動型通用缺陷複查機台600相較於標準缺陷複查機台100(如圖1所示)具有下列主要的差異:With regard to step 8, as shown in FIG. 6, the smart review sampling filter provides the user with the option to automatically classify defects based on the location of the defect. Figure 6 is a simplified diagram of an automated general defect review tool 600 in accordance with the present invention. Similar to the general defect review device, the wafer to be inspected and the previously detected defect file are loaded from the loading unit 102; then, the calibration wafer, the crystal origin coordinates, and the relative position of the defect are completed in the image capturing unit 104. Offset correction. The automatic general defect inspection machine 600 has the following major differences compared to the standard defect review machine 100 (shown in Figure 1):

(1)首先會將先前檢驗結果傳到智慧型複查取樣過濾器200(如圖2所示)以濾除所有非位於「敏感區域」的缺陷。所有先前檢驗發現的缺陷在智慧型複查取樣過濾器200處理之後都帶有元件相對位置的座標資訊。(1) The previous test result is first transmitted to the smart review sampling filter 200 (shown in FIG. 2) to filter out all defects not located in the "sensitive area". All defects found by previous inspections are followed by coordinate information of the relative position of the components after processing by the smart review sampling filter 200.

(2)另一項差異為缺陷定位時的圖像比對方式406。比對是在自動型通用缺陷複查機台600中進行,比對的圖像可能是常規的缺陷影像與其他晶粒(標準晶粒或鄰近晶粒)於同一位置所拍攝之影像;或者是經過影像處理/轉換過的缺陷影像及資料庫202中同一位置經過影像處理/轉換過的影像。(2) Another difference is the image matching mode 406 when the defect is positioned. The comparison is performed in an automatic general defect inspection machine 600, and the aligned image may be an image of a conventional defect image and other crystal grains (standard crystal or adjacent crystal grains) at the same position; or The image processed/converted defect image and the image processed/converted image at the same position in the database 202.

(3)如先前在(1)中所述,所有檢驗發現的缺陷在智慧型複查取樣過濾器200處理之後都帶有元件相對位置的座標資訊,此項資訊不僅可用在複查時的樣本選取,亦可據以自動分類缺陷。(3) As previously described in (1), all the defects found by the inspection are processed by the smart review sampling filter 200 with coordinate information of the relative position of the components, and this information can be used not only for sample selection at the time of review, It can also be used to automatically classify defects.

舉例而言,若界定複查範圍為50%之SRAM區域,也就是說SRAM區域中50%的缺陷會被隨機選取及複查。而SRAM區域可由智慧型複查取樣過濾器200從晶圓積體電路設計資料庫202中來界定。For example, if a SRAM area with a review range of 50% is defined, that is, 50% of the defects in the SRAM area will be randomly selected and reviewed. The SRAM area can be defined by the smart review sampling filter 200 from the wafer integrated circuit design database 202.

此發明裝置亦可用在缺陷檢驗上,這時智慧型複查取樣過濾器200可用來界定一檢驗敏感區域,這將使檢驗程序設定得更有效率且更準確。The inventive device can also be used for defect inspection, where the smart review sampling filter 200 can be used to define a test sensitive area which will make the test procedure more efficient and accurate.

再進一步舉例說明,在缺陷檢驗時,檢驗參數為50%的SRAM區域、X=80%、Y=90%,代表將每隔一SRAM區域界定為檢驗敏感區域,檢驗涵蓋範圍是每一SRAM區域的x軸為依積體電路設計資料庫所摘錄的實際長度的80%,與每一SRAM區域的y軸為依積體電路設計資料庫所摘錄的實際長度的90%。To further illustrate, in the defect inspection, the inspection parameter is 50% SRAM area, X=80%, Y=90%, which means that every other SRAM area is defined as the inspection sensitive area, and the inspection coverage is each SRAM area. The x-axis is 80% of the actual length extracted from the integrated circuit design database, and the y-axis of each SRAM area is 90% of the actual length extracted from the integrated circuit design database.

又舉一例說明在缺陷檢驗之應用,積體電路元件的晶粒中通常有兩種接觸挖孔型態:常規接觸挖孔型態及高縱橫比(high aspect ratio,HAR)之接觸挖孔型態。依據本發明實施例之智慧型複查取樣過濾器200可決定缺陷是否為過蝕刻(over etch)之常規接觸挖孔或是蝕刻不足之HAR接觸挖孔。因為此兩種缺陷對於半導體製程代表不同的意義。Another example is the application of defect inspection. There are usually two kinds of contact boring patterns in the crystal grains of integrated circuit components: conventional contact boring type and high aspect ratio (HAR) contact boring type. state. The smart review sampling filter 200 according to an embodiment of the present invention can determine whether the defect is an over-etch conventional contact hole or an under-etched HAR contact hole. Because these two defects represent different meanings for the semiconductor process.

當複查取樣過濾器在關鍵元件中檢驗到缺陷,或是在複查取樣過濾器中的自動缺陷重新定位之比對過程中發現到缺陷,就會自動標示這些缺陷的位置座標並且藉由網際網路發送警告訊號給相關人員。不同敏感區中各關鍵元件的取像範圍均可以預先定義並提供給智慧型複查取樣過濾器200,於設立缺陷複查計畫時選用。When the review sampling filter detects a defect in a critical component, or if a defect is found during the comparison of the automatic defect repositioning in the review sampling filter, the position coordinates of the defect are automatically marked and the Internet is used. Send a warning signal to the relevant personnel. The imaging range of each key component in different sensitive areas can be pre-defined and provided to the intelligent review sampling filter 200, which is selected when setting up the defect review plan.

雖然本發明之敘述是依據所示實施例,熟悉本項技藝者應可理解上述實施例可具有多種變化,而這些變化仍在本發明之精神和範圍內。同樣地,熟悉本項技藝者可進行各種修改而不背離如所附之請求項之精神和範圍。While the present invention has been described in terms of the embodiments shown and described, it will be understood that Also, various modifications may be made by those skilled in the art without departing from the spirit and scope of the appended claims.

100...缺陷複查機台100. . . Defect review machine

102...載入單元102. . . Loading unit

104...取像單元104. . . Image capture unit

106...取像條件106. . . Image capture condition

108...複查取樣108. . . Review sampling

110...主機110. . . Host

112...缺陷定位單元112. . . Defect location unit

114...缺陷分類及資料輸出單元114. . . Defect classification and data output unit

116...資料庫116. . . database

200...智慧型複查取樣過濾器200. . . Smart review sampling filter

202...積體電路設計資料庫202. . . Integrated circuit design database

204...位置摘錄處理器204. . . Location extract processor

206...複查位置計畫206. . . Review location plan

208...複查取樣單元208. . . Review sampling unit

300...積體電路設計資料庫300. . . Integrated circuit design database

302a、302b~302n...電腦302a, 302b~302n. . . computer

304...高速網路304. . . High speed network

400...自動缺陷定位單元400. . . Automatic defect locating unit

402...缺陷影像402. . . Defect image

404...參考影像404. . . Reference image

406...影像比對缺陷定位單元406. . . Image alignment defect locating unit

408...顯微鏡408. . . microscope

500...通用型缺陷定位單元500. . . Universal defect positioning unit

502...通用型缺陷檢驗機台502. . . Universal defect inspection machine

504...缺陷影像504. . . Defect image

506...自設計資料庫擷取的資料506. . . Information retrieved from the design database

508...影像轉換器一508. . . Image converter

510...影像轉換器二510. . . Image converter two

600...自動型通用缺陷複查機台600. . . Automatic general defect inspection machine

602...載入單元602. . . Loading unit

604...影像轉換器一604. . . Image converter

606...影像轉換器二606. . . Image converter two

圖1為標準缺陷檢視裝置之簡圖。Figure 1 is a simplified diagram of a standard defect inspection device.

圖2為本發明一實施例之智慧型複查取樣過濾器。2 is a smart review sampling filter according to an embodiment of the present invention.

圖3為一建置於叢集式電腦的積體電路設計資料庫。Figure 3 shows a library of integrated circuit design built into a cluster computer.

圖4為缺陷檢視機台中典型的自動缺陷定位單元之簡圖。Figure 4 is a simplified diagram of a typical automatic defect locating unit in a defect inspection machine.

圖5為本發明一實施例之通用缺陷定位單元之簡圖。FIG. 5 is a schematic diagram of a general defect locating unit according to an embodiment of the present invention.

圖6為本發明一實施例之自動型通用缺陷複查機台之簡圖。FIG. 6 is a schematic diagram of an automatic general defect inspection machine according to an embodiment of the present invention.

600...自動通用型缺陷複查設備600. . . Automatic general defect inspection equipment

602...晶圓載入單元602. . . Wafer loading unit

604...圖像轉換器一604. . . Image converter

606...圖像轉換器二606. . . Image converter two

Claims (15)

一種自動複查半導體積體電路缺陷的裝置,包含:一取像單元,用以取得待複查之元件圖像,及該元件圖像的參考對照影像;一智慧型複查取樣過濾器,其可藉由自積體電路設計資料庫中擷取之元件資訊以界定欲複查之範圍;一儲存單元,用以儲存晶圓中之積體電路設計資料庫;一缺陷重新定位單元,其係依據先前檢驗機台所得到的缺陷位置資料於待複查之晶圓上重新定位並取得其元件之積體電路圖案配置影像,將該影像與一參考元件之積體電路圖案影像比對,將該缺陷發生之位置座標標示於該參考圖案上,該參考圖案係選自該缺陷鄰近之元件影像或自該積體電路設計資料庫中,預指定區域內所擷取的元件之積體電路配置影像;一分類單元,用以依據自該積體電路設計資料庫所擷取的該元件位置資訊及缺陷特徵進行分類;以及一輸出單元,用以將複查後的該影像、該參考影像及分類結果輸出到客戶產量監控資料庫。 An apparatus for automatically reviewing defects of a semiconductor integrated circuit, comprising: an image capturing unit for obtaining a component image to be reviewed, and a reference control image of the component image; and a smart review sampling filter capable of The component information retrieved from the integrated circuit design database to define the range to be reviewed; a storage unit for storing the integrated circuit design database in the wafer; and a defect repositioning unit based on the previous inspection machine The defect location data obtained by the station is repositioned on the wafer to be reviewed and the integrated circuit pattern configuration image of the component is obtained, and the image is compared with the integrated circuit pattern image of a reference component, and the position coordinates of the defect are generated. Marked on the reference pattern, the reference pattern is selected from the component image adjacent to the defect or from the integrated circuit design database, and the integrated circuit configuration image of the component captured in the pre-designated area; a classification unit, For classifying the component location information and defect characteristics obtained from the integrated circuit design database; and an output unit for The video after the investigation, the reference output image and output monitoring classification results to the client database. 如請求項1所述之自動複查半導體積體電路缺陷的裝置,其中一電腦系統可為建置於高速網路的一特殊叢集電腦系統,各獨立電腦間及各獨立電腦與主機電腦之間以高速網路連接。 The apparatus for automatically reviewing defects of a semiconductor integrated circuit as described in claim 1, wherein a computer system can be a special cluster computer system built on a high speed network, between the independent computers and between the independent computers and the host computer. High speed internet connection. 如請求項1所述之自動複查半導體積體電路缺陷的裝置,其中該積體電路設計資料庫可為一高效率資料暫存結構,其可基於缺陷位置座標資訊預先載入相關的該積體電路元件之設計資料。 The apparatus for automatically reviewing a semiconductor integrated circuit defect according to claim 1, wherein the integrated circuit design database is a high-efficiency data temporary storage structure, and the related integrated body can be preloaded based on the defect position coordinate information. Design information for circuit components. 如請求項1所述之自動複查半導體積體電路缺陷的裝置,其中該缺陷重新定位單元在晶圓上進行缺陷定位比對程序時,可藉由比對在晶圓上該積體電路的一缺陷影像與由該積體電路設計資料庫上同一位置所轉換而得的影像、或在該標準晶粒上同一位置的一積體電路影像、或由選自晶圓上任一晶粒同一位置之積體電路影像進行對比,以取得缺陷位置之座標。 The apparatus for automatically reviewing a semiconductor integrated circuit defect according to claim 1, wherein the defect repositioning unit performs a defect positioning alignment process on the wafer by comparing a defect of the integrated circuit on the wafer The image is converted from an image converted from the same position on the integrated circuit design database, or an integrated circuit image at the same position on the standard die, or a product selected from the same position of any die on the wafer. The body circuit images are compared to obtain the coordinates of the defect location. 如請求項1所述之自動複查半導體積體電路缺陷的裝置,其中該缺陷重新定位單元定義之圖像比對參考圖像,可以自不同的元件中分別取得後設定,其中該元件座標資訊係由該積體電路設計資料庫所提供。 The apparatus for automatically reviewing defects of a semiconductor integrated circuit according to claim 1, wherein the image of the defect realignment unit is compared with a reference image, which can be separately obtained from different components, wherein the component coordinate information system Provided by the integrated circuit design database. 如請求項1所述之自動複查半導體積體電路缺陷的裝置,其中待複查的該積體電路圖案可藉由使用該積體電路設計資料庫以自動界定。 The apparatus for automatically reviewing defects of a semiconductor integrated circuit as described in claim 1, wherein the integrated circuit pattern to be reviewed can be automatically defined by using the integrated circuit design database. 如請求項1所述之自動複查半導體積體電路缺陷的裝置,其亦可作為一積體電路圖案檢驗裝置。 The apparatus for automatically reviewing defects of a semiconductor integrated circuit as described in claim 1 can also be used as an integrated circuit pattern inspection device. 如請求項7所述之積體電路圖案檢驗裝置,其中一檢驗之敏感區域的界定方式係導自於界定該複查範圍的作法,其可藉由在x或y方向乘上一常數所得。 The integrated circuit pattern inspection device of claim 7, wherein the manner in which the sensitive area of the test is defined is derived from the method of defining the review range, which can be obtained by multiplying a constant in the x or y direction. 如請求項7所述之積體電路圖案檢驗裝置,其中該檢驗之敏感區域可從取像單元中手動設定。 The integrated circuit pattern inspection device of claim 7, wherein the sensitive area of the inspection is manually settable from the image taking unit. 如請求項7所述之積體電路圖案檢驗裝置,其中所定義的該比對相符之參數可由元件密度所控制,且元件密度係依該積體電路設計資料庫預先指定。 The integrated circuit pattern checking device according to claim 7, wherein the parameter of the alignment matching defined by the component density is controlled, and the component density is pre-specified according to the integrated circuit design database. 如請求項1所述之自動複查半導體積體電路缺陷的裝置,其中由一自動缺陷重新定位程序所決定之異常圖案或缺陷可自動依該積體電路設計資料庫所擷取的元件位置座標進行分類。 The apparatus for automatically reviewing defects of a semiconductor integrated circuit as claimed in claim 1, wherein an abnormal pattern or defect determined by an automatic defect repositioning program is automatically performed according to a component position coordinate captured by the integrated circuit design database. classification. 如請求項7所述之積體電路圖案檢驗裝置,其中所檢驗的異常圖案或缺陷可自動依該積體電路設計資料庫所擷取的元件位置座標進行分類。 The integrated circuit pattern inspection device of claim 7, wherein the detected abnormal pattern or defect is automatically classified according to the component position coordinates captured by the integrated circuit design database. 如請求項7所述之積體電路圖案檢驗裝置,其中可於該積體電路設計資料庫中預先界定設計配置上易產生缺陷區域或製程上易產生缺陷區域之相對位置,並在被偵測到時自動標示。 The integrated circuit pattern checking device according to claim 7, wherein the relative position of the defect area which is easy to generate in the design configuration or the defect area in the process is pre-defined in the integrated circuit design database, and is detected. Automatically marked at the time. 如請求項1所述之自動複查半導體積體電路缺陷的裝置,其中該取像單元中所用的取像條件可依不同的關鍵位置預先指定。 The apparatus for automatically reviewing defects of a semiconductor integrated circuit as described in claim 1, wherein the image capturing conditions used in the image capturing unit are pre-specified according to different key positions. 如請求項7所述之積體電路圖案檢驗裝置,其中該取像單元中所用的取像條件可依不同的關鍵位置預先指定。 The integrated circuit pattern checking device according to claim 7, wherein the image capturing conditions used in the image capturing unit are pre-specified according to different key positions.
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