CN113674250A - Photomask defect detection method and device, electronic equipment, storage medium and chip - Google Patents
Photomask defect detection method and device, electronic equipment, storage medium and chip Download PDFInfo
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- 238000010894 electron beam technology Methods 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims abstract description 55
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Abstract
The application discloses a photomask defect detection method, a photomask defect detection device, electronic equipment, a storage medium and a chip, and belongs to the technical field of semiconductors, wherein the photomask defect detection method comprises the following steps: acquiring a production-level electron beam exposure system file of a photomask; detecting the mark of any pattern in the production-level electron beam exposure system file to obtain a reference pattern; and calling an exclusive or operation function of the production-level electron beam exposure system, and comparing whether the pattern to be detected is the same as the reference pattern or not, wherein the pattern to be detected is a pattern repeated with the reference pattern. The method realizes the automatic detection of the photomask defects, can save the labor cost, and has accurate detection result.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a photomask defect detection method and device, electronic equipment, a storage medium and a chip.
Background
The photomask, also called a photomask plate, is called Mask by English name, is a mother plate made of quartz and can be used in the semiconductor exposure process.
In the conventional semiconductor device manufacturing technology, a circuit pattern of a semiconductor device is formed by transferring the circuit pattern onto a surface of a wafer through a mask.
In the semiconductor manufacturing process, the defect detection process flow of the photomask is an indispensable link, and the conventional photomask detection mode is manual detection, which wastes time and labor.
Disclosure of Invention
The present application aims to provide a method and an apparatus for detecting mask defects, an electronic device, a storage medium, and a chip to at least solve the problem that the existing mask defect detection is time-consuming and labor-consuming.
The technical scheme of the application is as follows:
according to a first aspect of embodiments of the present disclosure, a method for detecting a mask defect is provided, which may include: acquiring a production-level electron beam exposure system file of a photomask; detecting the mark of any pattern in the production-level electron beam exposure system file to obtain a reference pattern; and calling an exclusive or operation function of the production-level electron beam exposure system, and comparing whether the pattern to be detected is the same as the reference pattern or not, wherein the pattern to be detected is a pattern repeated with the reference pattern.
Further, invoking an exclusive or operation function of the production-level electron beam exposure system, and comparing whether the pattern to be detected is the same as the reference pattern, may include: acquiring a pattern coordinate book of the photomask; importing the pattern coordinate book into a production-level electron beam exposure system; positioning the reference coordinate on the reference pattern, positioning the operation coordinate on the pattern to be detected, calling an exclusive-or operation function of the production-level electron beam exposure system to perform exclusive-or operation, and comparing whether the pattern to be detected is the same as the reference pattern.
Further, positioning the reference coordinates on the reference pattern and the operation coordinates on the pattern to be detected may include: extending the reference coordinate outwards for a preset distance based on the origin of the coordinate to form a reference coordinate area; positioning the reference coordinate region at the reference pattern; extending the operation coordinate outwards for a preset distance based on the origin of coordinates to form an operation coordinate area; and positioning the operation coordinate area on the pattern to be detected.
Further, comparing whether the pattern to be detected is the same as the reference pattern may specifically be: and subtracting each mark of the pattern to be detected from the mark corresponding to the reference pattern.
Further, before acquiring the production-level e-beam exposure system file of the reticle, the reticle defect detecting method may further include: and acquiring a graphic data stream file of the photomask, and converting the graphic data stream file into a production-level electron beam exposure system file.
Further, after comparing whether the pattern to be detected is the same as the reference pattern, the method for detecting the mask defect may further include: if the XOR operation result is 0, the photomask is determined to be a normal photomask, and no abnormal indication is sent.
Further, after comparing whether the pattern to be detected is the same as the reference pattern, the method for detecting the mask defect may further include: if the XOR operation result is 1, the mask is determined to be an abnormal mask, and an abnormal prompt is sent.
According to a second aspect of the embodiments of the present application, there is provided a mask defect detecting apparatus, which may include: the acquisition module is used for acquiring a production-level electron beam exposure system file of the photomask; the reference pattern determining module is used for detecting the identification of any pattern in the production-level electron beam exposure system file to obtain a reference pattern; and the comparison detection module is used for calling the XOR operation function of the production-level electron beam exposure system, comparing whether the pattern to be detected is the same as the reference pattern or not, and determining that the pattern to be detected is a pattern repeated with the reference pattern.
Further, the contrast detection module may include: a coordinate acquiring unit for acquiring a pattern coordinate of the photomask; the coordinate book importing unit is used for importing the pattern coordinate book into the production-level electron beam exposure system; and the comparison detection unit is used for positioning the reference coordinate on the reference pattern, positioning the operation coordinate on the pattern to be detected, calling an exclusive-or operation function of the production-level electron beam exposure system to perform exclusive-or operation, and comparing whether the pattern to be detected is the same as the reference pattern.
Further, the contrast detection unit may include: the reference coordinate area generating subunit is used for extending the reference coordinates outwards for a preset distance based on the coordinate origin to form a reference coordinate area; the reference positioning subunit is used for positioning the reference coordinate area on the reference pattern; the operation coordinate area generating subunit is used for extending the operation coordinate outwards by a preset distance based on the coordinate origin to form an operation coordinate area; and the operation positioning subunit is used for positioning the operation coordinate area on the pattern to be detected.
Further, the comparison detection unit may be specifically configured to: and subtracting each mark of the pattern to be detected from the mark corresponding to the reference pattern.
Further, the mask defect detecting apparatus further comprises: and the graphic data stream file conversion module is used for acquiring the graphic data stream file of the photomask and converting the graphic data stream file into a production-level electron beam exposure system file.
Further, the mask defect detecting apparatus may further include: and the first prompting module is used for determining that the photomask is a normal photomask and sending out abnormal-free prompt when the result of the exclusive-or operation is 0.
Further, the mask defect detecting apparatus may further include: and the second prompting module is used for determining the photomask to be an abnormal photomask and sending an abnormal prompt when the XOR operation result is 1.
According to a third aspect of embodiments of the present application, there is provided an electronic apparatus, which may include:
a processor;
a memory for storing processor-executable instructions;
wherein the processor is configured to execute the instructions to implement the reticle defect detection method as shown in any one of the embodiments of the first aspect.
According to a fourth aspect of embodiments of the present application, there is provided a storage medium, wherein instructions in the storage medium, when executed by a processor of an information processing apparatus or a server, cause the information processing apparatus or the server to implement the reticle defect detecting method as shown in any one of the embodiments of the first aspect.
According to a fifth aspect of the embodiments of the present application, there is provided a chip, the chip includes a processor and a communication interface, the communication interface is coupled to the processor, and the processor is configured to execute a program or instructions to implement the processes of the embodiments of the mask defect detecting method.
The technical scheme provided by the embodiment of the application at least has the following beneficial effects:
the method comprises the steps of obtaining a production-level electron beam exposure system file of a photomask, detecting the identification of any pattern in the production-level electron beam exposure system file, and obtaining a reference pattern; and the XOR operation function of the production-level electron beam exposure system is called, and whether the pattern to be detected is the same as the reference pattern or not is compared, so that the automatic detection of the photomask defect is realized, the detection method has accurate result, and the labor cost is saved.
Drawings
FIG. 1 is a schematic diagram illustrating a reticle defect inspection flow according to an exemplary embodiment;
FIG. 2 is a schematic diagram of a reticle defect inspection device according to an exemplary embodiment;
FIG. 3 is a schematic diagram illustrating a ratio detection module configuration according to an exemplary embodiment;
FIG. 4 is a schematic diagram illustrating a ratio detection cell configuration according to an exemplary embodiment;
FIG. 5 is a schematic diagram of a reticle defect inspection device according to another exemplary embodiment;
FIG. 6 is a schematic diagram illustrating a mask defect inspection apparatus according to one embodiment;
FIG. 7 is a schematic diagram of a reticle defect inspection device according to another embodiment;
FIG. 8 is a schematic diagram of an electronic device shown in accordance with an exemplary embodiment;
fig. 9 is a schematic diagram illustrating a hardware structure of an electronic device according to an example embodiment.
Detailed Description
In order to make the technical solutions of the present application better understood by those of ordinary skill in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in sequences other than those illustrated or described herein. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present application, as detailed in the appended claims.
At present, the process of the last inspection (JDV) of the photomask is performed manually by an engineer. The last inspection process needs to check whether all patterns (pattern) are correct, and the last inspection of each reticle takes about 1 hour, which is extremely time consuming and error prone. Therefore, the present application provides a method for inspecting mask defects to increase the last inspection speed of the mask.
The mask defect detection method provided by the embodiment of the present application is described in detail below with reference to the accompanying drawings through specific embodiments and application scenarios thereof.
As shown in fig. 1, in a first aspect of the embodiments of the present application, a method for detecting a mask defect is provided, which may include:
s110: acquiring a production-level electron beam exposure system file of a photomask;
s120: detecting the mark of any pattern in the production-level electron beam exposure system file to obtain a reference pattern;
s130: and calling an exclusive or operation function of the production-level electron beam exposure system, and comparing whether the pattern to be detected is the same as the reference pattern or not, wherein the pattern to be detected is a pattern repeated with the reference pattern.
The method comprises the steps of obtaining a production-level electron beam exposure system file of a photomask, detecting the identification of any pattern in the production-level electron beam exposure system file, and obtaining a reference pattern; and the XOR operation function of the production-level electron beam exposure system is called, and whether the pattern to be detected is the same as the reference pattern or not is compared, so that the automatic detection of the photomask defect is realized, the detection method has accurate result, and the labor cost is saved.
For a clearer description, the method steps described above are described in the following:
first, in step S110, a production-level electron beam exposure system file of the mask is obtained.
In this step, a production-level Electron Beam Exposure System file (MEBES for short) may be 4 times as large as a Graphic Data Stream file (GDS for short) in general, and since a Graphic of a mask plate is reduced by 4 times and then placed on a wafer surface, the Graphic Data Stream file is original Data on the wafer, and the production-level Electron Beam Exposure System file corresponds to Data for Manufacturing a real mask.
Next, referring to step S120, the mark of any pattern in the production-level e-beam exposure system file is detected to obtain a reference pattern.
In this step, the production-level e-beam exposure system file may include a plurality of patterns (pattern), and each pattern may include a plurality of marks (mark). In order to provide a reference, a pattern may be detected in advance as a reference pattern.
Illustratively, a pattern may be identified by manual detection, with the pattern being used as a reference pattern.
As another example, a pattern may be automatically detected and recognized by a machine learning model, and the pattern may be used as a reference pattern.
Finally, step S130 is introduced to call the xor operation function of the production-level electron beam exposure system to compare whether the pattern to be detected is the same as the reference pattern.
The exclusive or function in this step is applied to the logical operation. The mathematical sign of the exclusive or is ″, and the computer sign is 'xor'. The algorithm is as follows:
if the two values of a and b are not the same, the XOR result is 1, and if the two values of a and b are the same, the XOR result is 0. And comparing whether the pattern to be detected is the same as the reference pattern by utilizing an exclusive-or operation function.
For example, comparing whether the pattern to be detected is the same as the reference pattern may include: acquiring a pattern coordinate book of the photomask; importing the pattern coordinate book into a production-level electron beam exposure system; positioning the reference coordinate on the reference pattern, positioning the operation coordinate on the pattern to be detected, calling an exclusive-or operation function of the production-level electron beam exposure system to perform exclusive-or operation, and comparing whether the pattern to be detected is the same as the reference pattern.
In this example, positioning the reference coordinates to the reference pattern and the operation coordinates to the pattern to be detected may include: extending the reference coordinate outwards for a preset distance based on the origin of the coordinate to form a reference coordinate area; positioning the reference coordinate region at the reference pattern; extending the operation coordinate outwards for a preset distance based on the origin of coordinates to form an operation coordinate area; and positioning the operation coordinate area on the pattern to be detected.
In the step, the process of realizing automatic detection by the exclusive or operation function is to subtract each mark of the pattern to be detected from the mark corresponding to the reference pattern. The operation result may be 0 or 1. If the XOR operation result is 0, the photomask is determined to be a normal photomask, and no abnormal indication is sent. If the XOR operation result is 1, the mask is determined to be an abnormal mask, and an abnormal prompt is sent.
The pattern to be detected should be theoretically consistent with the reference pattern, and in the actual photomask production and manufacturing process, the actual condition of the pattern to be detected is not necessarily consistent with the reference pattern due to the problem of equipment precision or the problem of manufacturing process, so that the final inspection is required. The current final inspection is manual inspection, which takes at least 1 hour for each mask inspection. The step realizes the automatic detection of the photomask by utilizing the XOR operation function of the production-level electron beam exposure system, greatly improves the efficiency of photomask detection and saves the labor cost.
In some optional embodiments of the present application, invoking an exclusive or function of the production-level electron beam exposure system to compare whether the pattern to be detected is the same as the reference pattern may include:
acquiring a pattern coordinate book of the photomask;
importing the pattern coordinate book into a production-level electron beam exposure system;
positioning the reference coordinate on the reference pattern, positioning the operation coordinate on the pattern to be detected, calling an exclusive-or operation function of the production-level electron beam exposure system to perform exclusive-or operation, and comparing whether the pattern to be detected is the same as the reference pattern.
In the embodiment, the coordinate book is used for positioning the pattern to be detected and the reference pattern, determining the discharge positions of the patterns at different positions and identifying the patterns. Specifically, L may represent that the patterns are placed from left to right, and T may represent that the patterns are placed from top to bottom; l, R, T may indicate that the pattern is laid in one row, L1, R1, T1, B1 may indicate that the pattern is laid in more than one row.
In some optional embodiments of the present application, the positioning the reference coordinates to the reference pattern and the positioning the operation coordinates to the pattern to be detected may include: extending the reference coordinate outwards for a preset distance based on the origin of the coordinate to form a reference coordinate area; positioning the reference coordinate region at the reference pattern; extending the operation coordinate outwards for a preset distance based on the origin of coordinates to form an operation coordinate area; and positioning the operation coordinate area on the pattern to be detected.
In some optional embodiments of the present application, comparing whether the pattern to be detected is the same as the reference pattern may specifically be: and subtracting each mark of the pattern to be detected from the mark corresponding to the reference pattern.
In the above embodiment, before the detection, it is necessary to extend all the detection coordinates of the XOR operation function outward by a preset size, which may be 10 to 30, taking 21.25 as an example, and 21.25 as an example, where all the detection coordinates extend outward by 21.25 (coordinate size is 42.5 × 42.5), subtract the pattern to be detected with reference to the reference pattern, and check whether the XOR structure is abnormal.
In some optional embodiments of the present application, before acquiring the production-level e-beam exposure system file of the reticle, the reticle defect detecting method further comprises: and acquiring a graphic data stream file of the photomask, and converting the graphic data stream file into a production-level electron beam exposure system file.
In some optional embodiments of the present application, after comparing whether the pattern to be detected is the same as the reference pattern, the method for detecting mask defects may further include: if the XOR operation result is 0, the photomask is determined to be a normal photomask, and no abnormal indication is sent.
The implementation is to prompt the worker to perform the next photomask detection without abnormal condition for the photomask with a normal detection result.
In some optional embodiments of the present application, after comparing whether the pattern to be detected is the same as the reference pattern, the method for detecting mask defects may further include: if the XOR operation result is 1, the mask is determined to be an abnormal mask, and an abnormal prompt is sent.
The mask inspection device is used for prompting the abnormality of the mask with an abnormal inspection result and prompting a worker to perform manual mask inspection.
The method of the embodiment obtains the reference pattern by obtaining the production-level electron beam exposure system file of the photomask and detecting the mark of any pattern in the production-level electron beam exposure system file; and the XOR operation function of the production-level electron beam exposure system is called, and whether the pattern to be detected is the same as the reference pattern or not is compared, so that the automatic detection of the photomask defect is realized, and the labor cost is saved.
It should be noted that, in the mask defect inspection method provided in the embodiments of the present application, the execution body may be a mask defect inspection apparatus, or a control module of the mask defect inspection apparatus for executing the mask defect inspection method. The embodiment of the present application describes a mask defect inspection apparatus by taking a mask defect inspection apparatus as an example.
In a second aspect of the embodiments of the present application, as shown in fig. 2, there is provided a mask defect detecting apparatus, which may include:
an acquiring module 210, configured to acquire a production-level electron beam exposure system file of a photomask;
a reference pattern determining module 220, configured to detect an identifier of any pattern in a production-level electron beam exposure system file, to obtain a reference pattern;
the comparison detection module 230 is configured to invoke an exclusive or operation function of the production-level electron beam exposure system, compare whether the pattern to be detected is the same as the reference pattern, and compare the pattern to be detected with the reference pattern.
The device of the embodiment obtains the production-level electron beam exposure system file of the photomask by using the obtaining module 210, and detects the identifier of any pattern in the production-level electron beam exposure system file by using the reference pattern determining module 220 to obtain a reference pattern; and the comparison detection module 230 is used for calling the XOR operation function of the production-level electron beam exposure system and comparing whether the pattern to be detected is the same as the reference pattern, so that the automatic detection of the photomask defects is realized, and the labor cost is saved.
As shown in fig. 3, in some optional embodiments of the present application, the contrast detection module 230 may include:
a coordinate book acquiring unit 231 for acquiring a pattern coordinate book of the reticle;
a coordinate book importing unit 232 for importing the pattern coordinate book into the production-level electron beam exposure system;
and a comparison detection unit 233, configured to position the reference coordinate on the reference pattern, position the operation coordinate on the pattern to be detected, call an exclusive or operation function of the production-level electron beam exposure system to perform an exclusive or operation, and compare whether the pattern to be detected is the same as the reference pattern.
As shown in fig. 4, in some alternative embodiments of the present application, the comparison detection unit 233 may include:
a reference coordinate region generating subunit 2331 configured to extend the reference coordinates outward by a preset distance based on the origin of coordinates to form a reference coordinate region;
a reference positioning subunit 2332 for positioning the reference coordinate region to the reference pattern;
an operation coordinate region generating subunit 2333, configured to extend the operation coordinate outward by a preset distance based on the origin of coordinates to form an operation coordinate region;
an operation positioning sub-unit 2334 for positioning the operation coordinate region on the pattern to be detected.
In some optional embodiments of the present application, the comparison detecting unit 233 is specifically configured to:
and subtracting each mark of the pattern to be detected from the mark corresponding to the reference pattern.
As shown in fig. 5, in some optional embodiments of the present application, the mask defect detecting apparatus may further include:
the graphic data stream file conversion module 240 is configured to obtain a graphic data stream file of the mask and convert the graphic data stream file into a production-level electron beam exposure system file.
As shown in fig. 6, in some optional embodiments of the present application, the mask defect detecting apparatus may further include: the first prompt module 250 is configured to determine that the photomask is a normal photomask when the xor operation result is 0, and send an abnormal-free prompt. Thus, the worker can smoothly perform the mask manufacturing.
In order to detect and locate a defective reticle, as shown in fig. 7, in some alternative embodiments of the present application, the reticle defect detecting apparatus further includes: the second prompt module 260 is configured to determine that the mask is an abnormal mask and send an abnormal prompt when the xor operation result is 1. When the photomask is detected to have defects, workers are immediately reminded to carry out detection and timely rectification.
The device of the embodiment performs pattern detection on the photomask by using the acquisition module 210, the reference pattern determination module 220, the comparison detection module 230, the graphic data stream file conversion module 240, the first prompt module 250 and the second prompt module 260, so that automatic detection of photomask defects is realized, labor cost is saved, and the detection result is accurate.
The mask defect detection device in the embodiment of the present application may be a mobile electronic device, a non-mobile electronic device, or a component, an integrated circuit, or a chip in a terminal. By way of example, the mobile electronic device may be a mobile phone, a tablet computer, a notebook computer, a palm top computer, a vehicle-mounted electronic device, a wearable device, an ultra-mobile personal computer (UMPC), a netbook or a Personal Digital Assistant (PDA), and the like, and the non-mobile electronic device may be a server, a Network Attached Storage (NAS), a Personal Computer (PC), a Television (TV), a teller machine or a self-service machine, and the like, and the embodiments of the present application are not particularly limited.
The mask defect inspection device in the embodiments of the present application may be a device having an operating system. The operating system may be an Android (Android) operating system, an ios operating system, or other possible operating systems, and embodiments of the present application are not limited specifically.
The photomask defect detection device provided in the embodiment of the present application can implement each process implemented by the method embodiment of fig. 1, and is not described herein again to avoid repetition.
Optionally, as shown in fig. 8, an electronic device 800 is further provided in the embodiment of the present application, and includes a processor 801, a memory 802, and a program or an instruction stored in the memory 802 and executable on the processor 801, where the program or the instruction is executed by the processor 801 to implement the processes of the mask defect detection method embodiment, and can achieve the same technical effects, and in order to avoid repetition, the details are not repeated here.
It should be noted that the electronic device in the embodiment of the present application includes the mobile electronic device and the non-mobile electronic device described above.
Fig. 9 is a schematic diagram of a hardware structure of an electronic device implementing an embodiment of the present application.
The hardware 900 of the electronic device includes, but is not limited to: a radio frequency unit 901, a network module 902, an audio output unit 903, an input unit 904, a sensor 905, a display unit 906, a user input unit 907, an interface unit 908, a memory 909, and a processor 910.
Those skilled in the art will appreciate that the hardware 900 of the electronic device may further include a power supply (e.g., a battery) for supplying power to various components, and the power supply may be logically connected to the processor 910 through a power management system, so as to implement functions of managing charging, discharging, and power consumption through the power management system. The electronic device structure shown in fig. 9 does not constitute a limitation of the electronic device, and the electronic device may include more or less components than those shown, or combine some components, or arrange different components, and thus, the description is not repeated here.
The processor 910 is configured to invoke an exclusive or operation function of the production-level electron beam exposure system, and compare whether a pattern to be detected is the same as the reference pattern, where the pattern to be detected is a repeated pattern with the reference pattern.
A display unit 906 for displaying the detection result, i.e. the result of the exclusive or operation.
The electronic equipment of the embodiment detects the mark of any pattern in the production-level electron beam exposure system file by acquiring the production-level electron beam exposure system file of the photomask to obtain the reference pattern; and the XOR operation function of the production-level electron beam exposure system is called, and whether the pattern to be detected is the same as the reference pattern or not is compared, so that the automatic detection of the photomask defect is realized, and the labor cost is saved.
It should be understood that, in the embodiment of the present application, the input Unit 904 may include a Graphics Processing Unit (GPU) 9041 and a microphone 9042, and the Graphics Processing Unit 9041 processes image data of a still picture or a video obtained by an image capturing device (such as a camera) in a video capturing mode or an image capturing mode. The display unit 906 may include a display panel 9061, and the display panel 9061 may be configured in the form of a liquid crystal display, an organic light emitting diode, or the like. The user input unit 907 includes a touch panel 9071 and other input devices 9072. A touch panel 9071 also referred to as a touch screen. The touch panel 9071 may include two parts, a touch detection device and a touch controller. Other input devices 9072 may include, but are not limited to, a physical keyboard, function keys (e.g., volume control keys, switch keys, etc.), a trackball, a mouse, and a joystick, which are not described in detail herein. Memory 909 can be used to store software programs as well as various data including, but not limited to, application programs and operating systems. The processor 910 may integrate an application processor, which primarily handles operating systems, user interfaces, applications, etc., and a modem processor, which primarily handles wireless communications. It is to be appreciated that the modem processor described above may not be integrated into processor 910.
The embodiment of the present application further provides a readable storage medium, where a program or an instruction is stored on the readable storage medium, and when the program or the instruction is executed by a processor, the process of the embodiment of the method for detecting a mask defect can be implemented, and the same technical effect can be achieved.
The processor is the processor in the electronic device described in the above embodiment. The readable storage medium includes a computer readable storage medium, such as a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk or an optical disk, and so on.
The embodiment of the present application further provides a chip, where the chip includes a processor and a communication interface, the communication interface is coupled to the processor, and the processor is configured to run a program or an instruction to implement each process of the embodiment of the method for detecting a mask defect, and can achieve the same technical effect, and the details are not repeated here to avoid repetition.
It should be understood that the chips mentioned in the embodiments of the present application may also be referred to as system-on-chip, system-on-chip or system-on-chip, etc.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element. Further, it should be noted that the scope of the methods and apparatus of the embodiments of the present application is not limited to performing the functions in the order illustrated or discussed, but may include performing the functions in a substantially simultaneous manner or in a reverse order based on the functions involved, e.g., the methods described may be performed in an order different than that described, and various steps may be added, omitted, or combined. In addition, features described with reference to certain examples may be combined in other examples.
Through the above description of the embodiments, those skilled in the art will clearly understand that the method of the above embodiments can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware, but in many cases, the former is a better implementation manner. Based on such understanding, the technical solutions of the present application may be embodied in the form of a computer software product, which is stored in a storage medium (such as ROM/RAM, magnetic disk, optical disk) and includes instructions for enabling a terminal (such as a mobile phone, a computer, a server, or a network device) to execute the method according to the embodiments of the present application.
While the present embodiments have been described with reference to the accompanying drawings, it is to be understood that the invention is not limited to the precise embodiments described above, which are meant to be illustrative and not restrictive, and that various changes may be made therein by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (17)
1. A method for detecting a mask defect, comprising:
acquiring a production-level electron beam exposure system file of a photomask;
detecting the mark of any pattern in the production-level electron beam exposure system file to obtain a reference pattern;
and calling an exclusive or operation function of the production-level electron beam exposure system, and comparing whether the pattern to be detected is the same as the reference pattern or not, wherein the pattern to be detected is a pattern repeated with the reference pattern.
2. The method of claim 1, wherein the step of calling an exclusive-or function of the production-level electron beam exposure system to compare whether the pattern to be detected is the same as the reference pattern comprises:
acquiring a pattern coordinate book of the photomask;
importing the pattern coordinate book into the production-grade electron beam exposure system;
and positioning the reference coordinate on the reference pattern, positioning the operation coordinate on the pattern to be detected, calling an exclusive-or operation function of the production-level electron beam exposure system to perform exclusive-or operation, and comparing whether the pattern to be detected is the same as the reference pattern.
3. The method of claim 2, wherein positioning the reference coordinates on the reference pattern and the operation coordinates on the pattern to be detected comprises:
extending the reference coordinate outwards for a preset distance based on the origin of the coordinate to form a reference coordinate area;
positioning the reference coordinate region on the reference pattern;
extending the operation coordinate outwards for a preset distance based on the origin of coordinates to form an operation coordinate area;
and positioning the operation coordinate area on the pattern to be detected.
4. The method for detecting reticle defects according to claim 2, wherein the comparing whether the pattern to be detected is the same as the reference pattern is specifically:
and subtracting each mark of the pattern to be detected from the mark corresponding to the reference pattern.
5. The method of any of claims 1-4, wherein prior to acquiring the production-level e-beam exposure system file for the reticle, the method further comprises:
and acquiring a graphic data stream file of the photomask, and converting the graphic data stream file into the production-level electron beam exposure system file.
6. The reticle defect inspection method according to any one of claims 1 to 4, wherein after comparing whether the pattern to be inspected is the same as the reference pattern, the reticle defect inspection method further comprises:
and if the XOR operation result is 0, determining that the photomask is a normal photomask and sending out an abnormal-free prompt.
7. The reticle defect inspection method according to any one of claims 1 to 4, wherein after comparing whether the pattern to be inspected is the same as the reference pattern, the reticle defect inspection method further comprises:
and if the XOR operation result is 1, determining that the photomask is an abnormal photomask and sending an abnormal prompt.
8. An apparatus for inspecting mask defects, comprising:
the acquisition module is used for acquiring a production-level electron beam exposure system file of the photomask;
the reference pattern determining module is used for detecting the identification of any pattern in the production-level electron beam exposure system file to obtain a reference pattern;
and the comparison detection module is used for calling the XOR operation function of the production-level electron beam exposure system and comparing whether the pattern to be detected is the same as the reference pattern or not, wherein the pattern to be detected is a pattern repeated with the reference pattern.
9. The apparatus of claim 8, wherein the contrast inspection module comprises:
a coordinate acquiring unit for acquiring a pattern coordinate of the photomask;
the coordinate book importing unit is used for importing the pattern coordinate book into the production-level electron beam exposure system;
and the comparison detection unit is used for positioning the reference coordinate on the reference pattern, positioning the operation coordinate on the pattern to be detected, calling the XOR operation function of the production-level electron beam exposure system to perform XOR operation, and comparing whether the pattern to be detected is the same as the reference pattern.
10. The apparatus of claim 9, wherein the contrast inspection unit comprises:
the reference coordinate area generating subunit is used for extending the reference coordinates outwards for a preset distance based on the coordinate origin to form a reference coordinate area;
a reference positioning subunit, configured to position the reference coordinate region on the reference pattern;
the operation coordinate area generating subunit is used for extending the operation coordinate outwards by a preset distance based on the coordinate origin to form an operation coordinate area;
and the operation positioning subunit is used for positioning the operation coordinate area on the pattern to be detected.
11. The apparatus of claim 9, wherein the contrast inspection unit is specifically configured to:
and subtracting each mark of the pattern to be detected from the mark corresponding to the reference pattern.
12. The reticle defect inspection device of any one of claims 8-11, further comprising:
and the graphic data stream file conversion module is used for acquiring the graphic data stream file of the photomask and converting the graphic data stream file into the production-level electron beam exposure system file.
13. The reticle defect inspection device of any one of claims 8-11, further comprising:
and the first prompt module is used for determining that the photomask is a normal photomask and sending out abnormal-free prompt when the result of the exclusive-or operation is 0.
14. The reticle defect inspection device of any one of claims 8-11, further comprising:
and the second prompting module is used for determining the photomask to be an abnormal photomask and sending an abnormal prompt when the XOR operation result is 1.
15. An electronic device, comprising: comprising a processor, a memory, and a program or instructions stored on the memory and executable on the processor, the program or instructions when executed by the processor implementing the steps of the reticle defect detection method of any one of claims 1-7.
16. A readable storage medium having stored thereon a program or instructions which, when executed by a processor, performs the steps of the reticle defect inspection method of any one of claims 1-7.
17. A chip comprising a processor and a communication interface, the communication interface coupled to the processor, the processor configured to execute a program or instructions to implement the steps of the reticle defect detection method of any one of claims 1-7.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110979798.9A CN113674250B (en) | 2021-08-25 | 2021-08-25 | Photomask defect detection method and device, electronic equipment, storage medium and chip |
| PCT/CN2021/120259 WO2023024209A1 (en) | 2021-08-25 | 2021-09-24 | Mask defect detection method and apparatus, electronic device, storage medium, and chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202110979798.9A CN113674250B (en) | 2021-08-25 | 2021-08-25 | Photomask defect detection method and device, electronic equipment, storage medium and chip |
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| CN113674250B (en) | 2023-10-20 |
| WO2023024209A1 (en) | 2023-03-02 |
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