WO2023019852A1 - 一种金属化玻璃及其制备方法 - Google Patents

一种金属化玻璃及其制备方法 Download PDF

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Publication number
WO2023019852A1
WO2023019852A1 PCT/CN2021/141794 CN2021141794W WO2023019852A1 WO 2023019852 A1 WO2023019852 A1 WO 2023019852A1 CN 2021141794 W CN2021141794 W CN 2021141794W WO 2023019852 A1 WO2023019852 A1 WO 2023019852A1
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Prior art keywords
conductive medium
glass
glass substrate
conductive
thickness direction
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PCT/CN2021/141794
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English (en)
French (fr)
Inventor
张峰
刘风雷
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浙江水晶光电科技股份有限公司
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Publication of WO2023019852A1 publication Critical patent/WO2023019852A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3644—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the metal being silver
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3649—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer made of metals other than silver
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894—Materials of the insulating layers or coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors

Definitions

  • the present application relates to the technical field of glass adapter plate, in particular to a metallized glass and a preparation method thereof.
  • Metallizing the glass with through holes can achieve the functions of conducting electricity and guiding light at the same time.
  • the resulting glass is often used in electronic devices such as mobile phones.
  • the metallization of through-hole glass in the industry is mainly based on electroplating copper, which uses a method of sputtering a seed layer in the glass through-hole first, and then growing copper on the seed layer.
  • This method mainly has the following problems: the firmness is not stable, and it is easy to fall off;
  • the seed layer is used as the connection layer between glass and copper, which leads to a decrease in conductivity; glass is a poor conductor, so the sputtering process needs to be used to sputter the seed layer on the glass before electroplating, resulting in complicated processing procedures; moreover, the electroplating environment is polluted and limited by regions bigger.
  • the embodiments of the present application provide a metallized glass and a preparation method thereof, which can at least improve the overall performance of the metallized glass, and the preparation process is simple and the pollution is small.
  • a metallized glass may include a glass substrate, and the glass substrate may be provided with a plurality of through light guide holes along the thickness direction.
  • the light guide holes It can be filled with a conductive medium.
  • the glass substrate has a conductive function along the thickness direction and has an optical effect. It can transmit light beams and electrodes from one side to the other side along the thickness direction of the glass substrate, and can conduct light and conduct electricity between the top surface and the bottom surface of the glass substrate.
  • a conductive electrode may be provided on the surface of the conductive medium along the thickness direction, and the conductive electrode is connected to the conductive medium.
  • the conductive medium itself can conduct electricity, and the electrode connection can be conveniently formed through the conductive electrode, so that the metallized glass can be electrically connected with other electrical devices.
  • the end surface of the conductive medium is flush with the surface of the glass substrate, so that the surface of the glass substrate is flat, which is convenient for matching with other electrical devices.
  • the conductive medium and the conductive electrode can be made of the same material, so that the conductive medium and the conductive electrode can be matched and have high conductivity.
  • both the conductive medium and the conductive electrode may be silver glue.
  • the silver glue combines the conductive particles together through the bonding effect of the matrix resin to form a conductive path and realize the conductive connection between the conductive medium and the conductive electrode.
  • a method for preparing metallized glass may include: opening a plurality of through holes in the thickness direction of the glass substrate; filling the through holes with a conductive medium; Sintering the glass matrix filled with the conductive medium for a preset time.
  • the method of filling the conductive medium has a simple processing flow, and the filling method makes the conductive medium dense in the light guide hole, and the bonding force between the conductive medium and the glass matrix is good, and the firmness of the metallized glass formed by this is stable, gas Good density, high conductivity, can improve the overall performance of metallized glass. Moreover, the filling method has little pollution to the environment, can effectively play an environmental protection role, and meets environmental protection requirements.
  • opening a plurality of through holes in the thickness direction of the glass substrate may include: opening a plurality of through holes by laser ablation, dry etching, CNC drilling, wet etching, or laser-assisted wet etching. through hole.
  • the method may further include: printing conductive electrodes on the surface of the conductive medium in the thickness direction, so that the The conductive electrode is connected to the conductive medium.
  • the conductive electrode is to facilitate the electrical connection to other electrical devices, so that the metallized glass can form an electrode connection with other electrical devices through the conductive electrode to transmit electrical signals.
  • filling the through hole with a conductive medium may include: placing the glass substrate on a ceramic platform; placing filter paper between the glass substrate and the ceramic platform; In this way, a conductive medium can be filled in the through hole, and a negative pressure space is provided on the surface of the glass substrate on the side of the ceramic platform away from the glass substrate.
  • the filter paper and the ceramic platform are breathable, and the air in the light guide hole is vacuumed away through the filter paper and the ceramic platform, so that the silver glue can be drawn to the side of the ceramic platform away from the glass substrate, and densely packed in the light guide hole, which is beneficial to the silver glue. is filled in the light guide hole.
  • the conductive medium may be silver glue
  • the sintering the glass substrate filled with the conductive medium for a predetermined time may include: sintering at a temperature of 350° C. to 650° C. for 1 h to 2 h.
  • filling the conductive medium in the through hole by screen printing includes: using a CCD alignment method for screen printing, filling silver glue in the through hole with a scraper, and filling the silver glue in the through hole on the glass substrate. Areas not filled are masked by silkscreen.
  • the silver glue is integrated with the glass matrix, which improves the bonding force and makes the combination of the silver glue and the glass matrix more stable.
  • the method may further include: grinding and polishing along the thickness direction of the glass substrate, so that the end surface of the conductive medium and The surface of the glass substrate is even.
  • printing the conductive electrodes on the surface of the conductive medium in the thickness direction may include: using a screen printing process to perform silver glue printing on the end surface of the conductive medium to make corresponding conductive electrodes.
  • a plurality of light guide holes can be arranged on the glass substrate, and the light guide holes are arranged and penetrated along the thickness direction of the glass substrate.
  • Light guide; the light guide hole can be filled with a conductive medium to make the glass substrate conduct electricity along the thickness direction; the glass substrate has a conductive function along the thickness direction and has an optical effect, and can conduct light beams and electrodes along one side of the glass substrate thickness direction to the other side.
  • the conductive medium can be densely filled in the light guide hole, so that the bonding force between the conductive medium and the glass substrate is better, and the metallized glass obtained in this way is more stable; and the conductive medium is filled in the light guide hole, It can make the airtightness of the formed metallized glass better, avoid the hollow problem caused by electroplating copper, avoid air leakage, and also improve the conductivity of the metallized glass, so that the overall performance of the metallized glass can be improved At the same time, the filling method has simple processing flow, high efficiency, low cost, little environmental pollution, and meets environmental protection requirements.
  • the method for preparing the metallized glass may include opening a plurality of through holes in the thickness direction of the glass substrate; filling the through holes with a conductive medium; and sintering the glass substrate filled with the conductive medium according to a preset time.
  • the way of filling enables the conductive medium to be directly sintered and melted with the glass substrate under high temperature sintering, and the formed metallized glass has good airtightness and solid filling to avoid air leakage at the connection between the conductive medium and the glass substrate, and the processing flow is simple. High efficiency and low pollution.
  • Fig. 1 is a structural schematic diagram of glass metallization in the related art
  • Fig. 2 is a schematic structural view of the metallized glass provided in this embodiment
  • Fig. 3 is a flow chart of the preparation method of the metallized glass provided in this embodiment
  • Fig. 4 is a process diagram of the method for preparing the metallized glass provided in this embodiment.
  • Icons 10-glass; 11-void; 12-seed layer; 13-electroplating layer; 101-glass substrate; 102-conductive medium; 201-ceramic platform; 202-filter paper;
  • orientation or positional relationship indicated by the terms “inner”, “outer”, etc. is based on the orientation or positional relationship shown in the drawings, or the usual placement of the application product when it is used. Orientation or positional relationship is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present application.
  • first”, “second”, etc. are only used for distinguishing descriptions, and should not be construed as indicating or implying relative importance.
  • setting and “connection” should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct It can also be connected indirectly through an intermediary, or it can be the internal communication of two elements.
  • connection should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct It can also be connected indirectly through an intermediary, or it can be the internal communication of two elements.
  • the glass interposer has become more and more research hotspot because of its excellent electrical insulation, low manufacturing cost and good process compatibility, but the reliable metal filling on the glass 10 has Certain challenges, currently there are mainly processes such as electroplating copper, as shown in Figure 1, the production method is to first sputter a seed layer 12 on the glass 10, and then use an electroplating process to electroplate copper on the seed layer 12 to form an electroplating layer 13, and then A cold working process is used to planarize the bumps, and then the seed layer 12 is sputtered again in the area where electrodes need to be grown, and then copper electroplating is performed for the second time.
  • electroplating copper as shown in Figure 1
  • the production method is to first sputter a seed layer 12 on the glass 10, and then use an electroplating process to electroplate copper on the seed layer 12 to form an electroplating layer 13, and then A cold working process is used to planarize the bumps, and then the seed layer 12 is sputtered again in the area where electrodes need to be grown,
  • the processing flow of the above method is complicated. Since the glass 10 is a poor conductor, the seed layer 12 needs to be sputtered on the glass 10 before electroplating; After the alkali treatment, it is easy to fall off; the air tightness is poor, and the electroplating copper adopts the mode of growing copper on the seed layer 12. After electroplating, there are often gaps 11 in the middle (not all filled), which leads to the normalization of the glass 10. There is an air leakage situation on the reverse side; due to the need to use the seed layer 12 as the connecting layer between the glass 10 and the electroplating layer 13, the seed layer 12 is likely to appear between the copper in the hole of the glass 10 and the copper electrode on the surface, and the seed layer 12 will separate the two. The connection is isolated, resulting in a drop in conductivity.
  • the embodiment of the present application provides a metallized glass, which is directly filled with silver glue, and the electrodes are directly printed with silver glue on the glass substrate 101 by screen printing.
  • the silver glue of the electrode is directly connected to avoid the problem of lowering the resistivity.
  • an embodiment of the present application provides a metallized glass
  • the metallized glass may include a glass substrate 101, the glass substrate 101 may be provided with a plurality of through light guide holes along the thickness direction, and the light guide holes
  • the interior may be filled with a conductive medium 102 .
  • the glass substrate 101 can be provided with a plurality of light guide holes, the light guide holes can be arranged and penetrated along the thickness direction, and the light guide holes are filled with a conductive medium 102. In this way, the glass substrate 101 has the characteristics of light guide and conduction, so as to The glass substrate 101 can conduct light and conduct electricity between the top surface and the bottom surface of the glass substrate 101 along the thickness direction.
  • this application adopts the method of filling the conductive medium 102, the processing flow is simple, and the filling method makes the density of the conductive medium 102 in the light guide hole good, and the bonding force between the conductive medium 102 and the glass substrate 101 Well, the metallized glass formed in this way has stable firmness, good air tightness, and high electrical conductivity, which can improve the overall performance of the metallized glass. Moreover, as the demand for environmental protection becomes increasingly strong, the production process is required to have as little environmental pollution as possible. However, this application adopts the method of filling the conductive medium 102. Compared with the electroplating process, the filling method has less environmental pollution. It can effectively play a role in environmental protection and meet environmental protection requirements.
  • a plurality of light guide holes can be provided on the glass substrate 101, and the light guide holes are arranged and penetrated along the thickness direction of the glass substrate 101, and the glass substrate 101 can be guided along the thickness direction through the light guide holes.
  • the light guide hole is filled with a conductive medium 102, which is used to make the glass substrate 101 conduct electricity along the thickness direction; Transmitting from one side to the other.
  • the conductive medium 102 can be densely filled in the light guide hole, so that the bonding force between the conductive medium 102 and the glass substrate 101 is better, and the metallized glass obtained in this way is more stable;
  • the conductive medium 102 can make the airtightness of the formed metallized glass better, avoid the hollow problem caused by electroplating copper, avoid air leakage, and can also improve the conductivity of the metallized glass. In this way, the metallized glass
  • the overall performance has been improved; at the same time, the filling method has simple processing flow, high efficiency, low cost, little environmental pollution, and meets environmental protection requirements.
  • a conductive electrode (not shown in FIG. 2 ) may be provided on the surface of the conductive medium 102 along the thickness direction, and the conductive electrode and the conductive medium 102 are electrically connected.
  • the conductive medium 102 itself can conduct electricity, but the electrode connection can be conveniently formed through the conductive electrode, so as to electrically connect the metallized glass and other electrical devices.
  • the end face of the conductive medium 102 is flush with the surface of the glass substrate 101. After the light guide hole of the glass substrate 101 is filled with the conductive medium 102, the end face of the conductive medium 102 along the thickness direction is flush with the surface of the glass substrate 101, so that the glass The surface of the substrate 101 is flat, so as to be conveniently matched with other electrical devices.
  • a conductive electrode may also be provided, and the conductive electrode is higher than the surface of the glass substrate 101, but the height of the conductive electrode is so small that it can be ignored.
  • the conductive medium 102 and the conductive electrode are made of the same material to improve conductivity.
  • both the conductive medium 102 and the conductive electrode can be silver glue.
  • the silver glue combines the conductive particles together through the bonding effect of the matrix resin to form a conductive path and realize the conductive connection of the adhered materials.
  • the matrix resin of silver glue is an adhesive, which can be filled and bonded at an appropriate curing temperature.
  • the method of filling silver glue can also avoid material deformation, thermal damage and internal stress of electronic devices that may be caused by electroplating. .
  • conductive silver glue can be made into paste to achieve high line resolution.
  • the process of filling silver glue is simple and easy to operate, which can improve production efficiency and avoid environmental pollution caused by electroplating.
  • the metallized glass provided in the embodiment of the present application can be used as a glass adapter plate. Taking it as an example for the screen of a mobile phone, the metallized glass is placed under the screen of the mobile phone, and the light is guided through the light guide hole, so that the metallized glass has The optical effect can transmit the light beam from one side of the glass substrate 101 to the other side, so that the display picture can be seen on the screen; at the same time, the metallized glass has a conductive effect through the conductive medium 102, and can connect the two sides of the metallized glass
  • the electrical devices form electrode connections for electrical signal transmission and transmission with communication functions.
  • a light guide hole can be provided along the thickness direction on the glass substrate 101, and a conductive medium 102 can be filled in the light guide hole, so that the glass substrate 101 has a conductive function and also has an optical effect; Current and light beams can be conducted from one side of the glass substrate 101 in the thickness direction to the other.
  • conductive electrodes can also be provided on the conductive medium 102 to form electrical connections with other electrical devices through the conductive electrodes. Both the conductive medium 102 and the conductive electrodes can be made of silver glue.
  • the resulting metallized glass has a simple processing flow and requires only a small amount of equipment to complete the product processing; the firmness is stable and the bonding force is good, and it can be filled with sintered silver glue, which has a filler similar to glass powder inside the sintered silver glue , directly sintered and melted with the glass substrate 101 under high temperature sintering; the airtightness is good, and the sintered silver glue is used for metallization filling.
  • the sintered silver glue filled in the light guide hole is directly connected to the sintered silver glue used as the conductive electrode on the surface, so as to avoid the problem of lowering the resistivity.
  • the embodiment of the present application also provides a method for preparing metallized glass, to prepare metallized glass, the method may include:
  • S100 Open a plurality of through holes in the thickness direction of the glass substrate 101 .
  • Glass drilling mainly includes laser ablation, dry etching, CNC drilling, wet etching, laser-assisted wet etching, etc.
  • the metallized glass provided in the embodiment of this application is very little affected by the drilling method , any of the above punching methods can be used for the glass substrate 101 of the embodiment of the present application; the hole diameter after punching can be 50um-1000um, and the thickness of the glass substrate 101 and the through hole can be consistent, and can be 0.1mm-10mm .
  • the opened through hole is a light guide hole, which can be used to guide light, so that the light beam propagates from one side of the glass substrate 101 along the thickness direction through the through hole to the other side.
  • the method of filling the conductive medium 102 makes the metallized glass have a conductive function, the process is simple, and can effectively compact the light guide hole, avoiding gaps generated after the conductive medium 102 is filled in the light guide hole, which affects the airtightness of the metallized glass .
  • the filling process will not produce toxic and harmful substances, nor will it be discharged into the atmosphere, so the pollution to the environment is small, and it can effectively play a role in environmental protection and meet environmental protection requirements.
  • Filling conductive medium 102 adopts following steps to carry out:
  • S111 placing the glass substrate 101 on the ceramic platform 201 .
  • the interior of the ceramic material has a honeycomb structure, so the ceramic material is breathable.
  • the glass substrate 101 is placed on the ceramic platform 201 first.
  • a layer of filter paper 202 is separated between the glass substrate 101 and the ceramic platform 201 .
  • S113 Fill the through hole with the conductive medium 102 by screen printing, and provide a negative pressure space on the surface of the glass substrate 101 on the side of the ceramic platform 201 away from the glass substrate 101 .
  • the screen printing adopts the CCD (Charge-coupled Device) alignment method, through the scraper 204, the silver glue is placed in the area that needs to be filled with silver glue, that is, the silver glue is placed in the through hole, and the unfilled area on the glass substrate 101 is covered by the screen 203;
  • the screen printing process vacuum is drawn on the side of the ceramic platform 201 away from the glass substrate 101, and the filter paper 202 and the ceramic platform 201 are ventilated, so the air in the through hole is vacuumed away through the filter paper 202 and the ceramic platform 201, which can make
  • the silver glue is drawn to the side of the ceramic platform 201 away from the glass substrate 101 and compacted in the through hole, which is beneficial for the silver glue to be filled in the through hole.
  • S120 Sintering the glass substrate 101 filled with the conductive medium 102 according to a preset time.
  • the glass substrate 101 is placed in a sintering furnace at 350° C. to 650° C. for sintering for 1 hour to 2 hours, so that the silver glue and the glass substrate 101 are integrated.
  • a sintering furnace at 350° C. to 650° C. for sintering for 1 hour to 2 hours, so that the silver glue and the glass substrate 101 are integrated.
  • the bonding force between the silver glue and the glass substrate 101 is improved, and the bonding between the two is stronger and more stable.
  • the specific sintering temperature and time are determined according to the characteristics of the silver glue and the melting point of the glass substrate 101.
  • the sintering temperature and time can be set according to the specific material, which is not specifically limited in this embodiment of the present application.
  • the glass substrate 101 After the conductive medium 102 is formed on the glass substrate 101, the glass substrate 101 has a conductive function, and the current or electrical signal is transmitted from one side of the glass substrate 101 in the thickness direction to the other side through the conductive medium 102 for electrical transmission.
  • the surface of the glass substrate 101 will have slight protrusions or depressions. Grinding and polishing processes are used to flatten the surface of the excess silver glue and the surface of the glass substrate 101. After the treatment, the surface protrusions or depressions can be less than 3um.
  • the conductive electrode can be conveniently electrically connected to other electrical devices, so that the metallized glass can form an electrode connection with other electrical devices through the conductive electrode to transmit electrical signals.
  • the conductive electrode is on the end surface of the conductive medium 102, and its height is small, on the order of microns, so its height can be ignored.
  • silver glue is printed on the end surface of the conductive medium 102 to make corresponding conductive electrodes.
  • the conductive electrodes can be made of the same silver glue material as the conductive medium 102, or other conductive materials similar to silver glue.
  • holes are drilled on the glass substrate 101 to form light guide holes, and then sintered silver glue is filled in the light guide holes of the glass substrate 101 by screen printing, basically
  • the working method is to place the glass substrate 101 with light guide holes on the air-permeable ceramic platform 201, the glass substrate 101 and the ceramic platform 201 are separated by a layer of filter paper 202, and use the CCD alignment method to place the silver glue in the area where it needs to be filled.
  • Silver glue the unfilled area is covered by the screen 203; during the screen printing process, the air in the light guide hole is vacuumed away, and the silver glue is filled in the light guide hole; after the silver glue is filled, the glass substrate 101 is placed in a sintering furnace at 350°C to 650°C for sintering, so that the silver glue and the glass substrate 101 are integrated; after the sintering is completed, the surface of the glass substrate 101 will have slight protrusions or depressions.
  • the glue surface and the glass substrate 101 are planarized; finally, the screen printing process is used to carry out silver glue printing on the surface of the conductive medium 102 to form corresponding conductive electrodes, and the conductive electrodes and the conductive medium 102 are conducted to make the metallized glass and other Electrical devices form electrode connections for electrical transmission.
  • a plurality of light guide holes are arranged on the glass substrate, and the light guide holes are arranged and penetrated along the thickness direction of the glass substrate, and the glass substrate can be guided in the thickness direction through the light guide holes;
  • the light guide hole is filled with a conductive medium, which is used to make the glass substrate conduct electricity along the thickness direction;
  • the glass substrate has a conductive function along the thickness direction, and has an optical effect, and can transmit light beams and electrodes from one side to the other side along the thickness direction of the glass substrate.
  • the conductive medium can be densely filled in the light guide hole, so that the bonding force between the conductive medium and the glass substrate is better, and the metallized glass obtained in this way is more stable; and the conductive medium is filled in the light guide hole, It can make the airtightness of the formed metallized glass better, avoid the hollow problem caused by electroplating copper, avoid air leakage, and also improve the conductivity of the metallized glass, so that the overall performance of the metallized glass can be improved At the same time, the filling method has simple processing flow, high efficiency, low cost, little environmental pollution, and meets environmental protection requirements.
  • the metallized glass of the present application and its method of preparation are reproducible and can be used in a variety of industrial applications.
  • the metallized glass of the present application and its preparation method can be used in the technical field of glass transfer plates.

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Abstract

本申请提供一种金属化玻璃及其制备方法，涉及玻璃转接板技术领域，包括玻璃基体，所述玻璃基体上沿厚度方向设有多个贯通的导光孔，所述导光孔内填充有导电介质。玻璃基体沿厚度方向具备导电功能，又有光学效果，能够将光束和电极沿玻璃基体厚度方向的一面传导到另一面。通过填充的方式，能在导光孔内密实地填满导电介质，以使导电介质和玻璃基体的结合力更好，这样得到的金属化玻璃更稳定；且在导光孔内填实导电介质，能使形成的金属化玻璃的气密性更好，能避免在电镀铜产生的空心问题，避免漏气现象，也能提高金属化玻璃的导电率，金属化玻璃的整体性能得到提升；填充的方式加工流程简单，效率高，成本低，对环境污染小，符合环保要求。

Description

一种金属化玻璃及其制备方法
相关申请的交叉引用
本申请要求于2021年8月16日提交中国国家知识产权局的申请号为202110936664.9、名称为“一种金属化玻璃及其制备方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及玻璃转接板技术领域，具体涉及一种金属化玻璃及其制备方法。
背景技术
将具有通孔的玻璃金属化，可以达到同时导电、导光的功能。制成的玻璃常用于手机类的电子器件。
当前行业内对通孔玻璃金属化主要采用以电镀铜为主，电镀铜采用的是在玻璃通孔内先溅射一层种子层，然后在种子层上生长铜的方式。这种方式主要有以下问题：牢固度不稳定，容易出现脱落现象；气密性差，电镀后往往存在通孔没有全部填满的情况，导致玻璃的正、反面存在漏气的情况；由于需要用种子层做玻璃与铜的连接层，导致导电率下降；玻璃是不良导体，因此电镀前需要对玻璃采用溅镀工艺溅镀种子层，导致加工流程复杂；而且电镀环境污染较大，受地域限制比较大。
发明内容
本申请实施例提供一种金属化玻璃及其制备方法，至少能够提高金属化玻璃的整体性能，且制备流程简单，污染小。
在本申请的一些实施例中，提供了一种金属化玻璃，该金属化玻璃可以包括玻璃基体，所述玻璃基体上可以沿厚度方向设有多个贯通的导光孔，所述导光孔内可以填充有导电介质。
玻璃基体沿厚度方向具备导电功能，又有光学效果，能够将光束和电极沿玻璃基体厚度方向的一面传导到另一面，在玻璃基体的顶面和底面之间能够导光、导电。
可选地，所述导电介质可以沿所述厚度方向的表面上设有导电极，所述导电极和所述导电介质导通。
导电介质本身能够导电，通过导电极能方便形成电极连接，以使金属化玻璃和其他电器件电连接。
可选地，所述导电介质的端面和所述玻璃基体的表面平齐，以使玻璃基体的表面平整，方便和其他电器件匹配设置。
可选地，所述导电介质和所述导电极的材料可以相同，能使导电介质和导电极匹配， 导电率高。
可选地，所述导电介质和所述导电极可以均为银胶。银胶通过基体树脂的粘接作用把导电粒子结合在一起，形成导电通路，实现导电介质和导电极的导电连接。
在本申请一些实施例中，提供了一种金属化玻璃的制备方法，制备方法可以包括：在玻璃基体的厚度方向上可以开设多个通孔；在所述通孔内可以填充导电介质；按预设时间烧结填充有所述导电介质的所述玻璃基体。
填充导电介质的方式，加工流程简单，且填充的方式使得导电介质在导光孔内的致密性好，导电介质和玻璃基体的结合力好，以此形成的金属化玻璃的牢固度稳定，气密性好，导电率高，能提高金属化玻璃的整体性能。并且，填充的方式对于环境的污染小，能有效起到环保作用，满足环保要求。
可选地，在所述玻璃基体的厚度方向上开设多个通孔可以包括：通过激光烧蚀法、干法刻蚀、CNC钻孔、湿法刻蚀、激光辅助湿法刻蚀开设多个通孔。
可选地，所述按预设时间烧结填充有所述导电介质的所述玻璃基体之后，所述方法还可以包括：在所述导电介质的厚度方向的表面上可以印刷导电极，使所述导电极和所述导电介质导通。
导电极是为了方便电连接其他电器件，以使金属化玻璃通过导电极和其他电器件形成电极连接，进行电信号的传输。
可选地，所述在所述通孔内填充导电介质可以包括：将所述玻璃基体放置在陶瓷平台上；在所述玻璃基体与所述陶瓷平台之间放置过滤纸；采用丝网印刷的方式，可以在所述通孔内填充导电介质，并在所述陶瓷平台远离所述玻璃基体的一侧对所述玻璃基体表面提供负压空间。
过滤纸和陶瓷平台透气，导光孔中的空气经过滤纸和陶瓷平台被真空抽走，能使银胶被抽向陶瓷平台远离玻璃基体的一侧，并在导光孔内密实，利于银胶在导光孔中被填满。
可选地，所述导电介质可以为银胶，所述按预设时间烧结填充有所述导电介质的所述玻璃基体可以包括：采用350℃～650℃温度烧结1h～2h。
可选地，所述采用丝网印刷的方式在所述通孔内填充导电介质包括：丝网印刷采用CCD对位方式，通过刮刀在所述通孔内填充银胶，所述玻璃基体上的不填充区域被丝网遮蔽。
通过高温烧结，银胶与玻璃基体融为一体，提高结合力，使银胶和玻璃基体的结合更稳定。
可选地，所述在所述导电介质的厚度方向的表面上印刷导电极之前，所述方法还可以包括：沿所述玻璃基体的厚度方向研磨、抛光，以使所述导电介质的端面和所述玻璃基体的表面平齐。
填充导电介质烧结后，为使玻璃基体表面平整，需进行研磨、抛光处理。
可选地，在所述导电介质的厚度方向的表面上印刷导电极可以包括：采用丝网印刷工艺，在所述导电介质的端面进行银胶印刷，做出相应的导电极。
本申请实施例提供的金属化玻璃及其制备方法，在玻璃基体上可以设置多个导光孔，导光孔沿玻璃基体的厚度方向设置且贯通，通过导光孔能使玻璃基体沿厚度方向导光；导光孔内可以填充有导电介质，用于使玻璃基体沿厚度方向导电；玻璃基体沿厚度方向具备导电功能，又有光学效果，能够将光束和电极沿玻璃基体厚度方向的一面传导到另一面。通过填充的方式，能在导光孔内密实地填满导电介质，以使导电介质和玻璃基体的结合力更好，这样得到的金属化玻璃更稳定；且在导光孔内填实导电介质，能使形成的金属化玻璃的气密性更好，能避免在电镀铜产生的空心问题，避免漏气现象，也能提高金属化玻璃的导电率，这样一来，金属化玻璃的整体性能得到提升；同时，填充的方式加工流程简单，效率高，成本低，对环境污染小，符合环保要求。
另外，金属化玻璃的制备方法可以包括在玻璃基体的厚度方向上开设多个通孔；在通孔内填充导电介质；按预设时间烧结填充有导电介质的玻璃基体。填充的方式使得高温烧结下导电介质能与玻璃基体直接烧结融化为一体，形成的金属化玻璃气密性好，实心填充，避免导电介质与玻璃基体的连接处出现漏气，且加工流程简单，效率高，污染小。
附图说明
为了更清楚地说明本申请实施例的技术方案，下面将对本申请实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本申请的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。
图1是相关技术的玻璃金属化的结构示意图；
图2是本实施例提供的金属化玻璃结构示意图；
图3是本实施例提供的金属化玻璃的制备方法流程图；
图4是本实施例提供的金属化玻璃的制备方法过程图。
图标：10-玻璃；11-空隙；12-种子层；13-电镀层；101-玻璃基体；102-导电介质；201-陶瓷平台；202-过滤纸；203-丝网；204-刮刀。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。
在本申请的描述中，需要说明的是，术语“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，或者是该申请产品使用时惯常摆放的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”等仅用于区分描述，而不能理解为指示或暗示相对重要性。
还需要说明的是，除非另有明确的规定和限定，术语“设置”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。
在三维堆叠的芯片结构中，玻璃转接板因其优良的电绝缘性、低廉的制作成本及良好的工艺兼容性，越来越成为人们研究的热点，但是玻璃10上制作可靠的金属填充有一定的挑战性，目前主要有电镀铜等工艺，如图1所示，制作方法为先在玻璃10上溅镀种子层12，之后采用电镀工艺在种子层12上电镀铜形成电镀层13，然后采用冷加工工艺对凸起点进行平坦化作业，之后在需要生长电极的区域再次溅镀种子层12，然后进行二次电镀铜。
上述方法加工流程复杂，由于玻璃10是不良导体，电镀前需要对玻璃10采用溅镀工艺溅镀种子层12；牢固度不稳定，目前行业内对玻璃10电镀普遍存在可靠性问题，经过耐酸耐碱处理后，容易出现脱落现象；气密性差，电镀铜采用的是在种子层12上生长铜的方式，电镀后往往存在中间有空隙11的情况(没有全部填满)，导致玻璃10的正反面存在漏气的情况；由于需要用种子层12做玻璃10与电镀层13的连接层，玻璃10孔中的铜与表面的铜电极之间容易出现种子层12，种子层12会将两者的连接隔离开来，导致导电率下降。
在此基础上，本申请实施例提供一种金属化玻璃，采用银胶直接填充，电极采用丝网印刷的方式将银胶直接印刷在玻璃基体101上，通孔中填充的银胶与表面做电极的银胶直接连接，避免电阻率降低的问题。
具体地，请参照图2，本申请实施例提供一种金属化玻璃，该金属化玻璃可以包括玻璃基体101，玻璃基体101上沿厚度方向可以设有多个贯通的导光孔，导光孔内可以填充有导电介质102。
玻璃基体101上可以设有多个导光孔，导光孔可以沿厚度方向设置且贯通，导光孔内填充有导电介质102，这样一来，玻璃基体101具有导光、导电的特性，以使玻璃基体101沿厚度方向，在玻璃基体101的顶面和底面之间能够导光、导电。
相较于目前的相关技术，本申请采用填充导电介质102的方式，加工流程简单，且填充的方式使得导电介质102在导光孔内的致密性好，导电介质102和玻璃基体101的结合 力好，以此形成的金属化玻璃的牢固度稳定，气密性好，导电率高，能提高金属化玻璃的整体性能。并且，随着对环境保护的需求日益强烈，要求生产过程尽量对环境的污染小，而本申请采用填充导电介质102的方式，相较于电镀工艺来说，填充的方式对于环境的污染小，能有效起到环保作用，满足环保要求。
本申请实施例提供的金属化玻璃，在玻璃基体101上可以设置多个导光孔，导光孔沿玻璃基体101的厚度方向设置且贯通，通过导光孔能使玻璃基体101沿厚度方向导光；导光孔内填充有导电介质102，用于使玻璃基体101沿厚度方向导电；玻璃基体101沿厚度方向具备导电功能，又有光学效果，能够将光束和电极沿玻璃基体101厚度方向的一面传导到另一面。通过填充的方式，能在导光孔内密实地填满导电介质102，以使导电介质102和玻璃基体101的结合力更好，这样得到的金属化玻璃更稳定；且在导光孔内填实导电介质102，能使形成的金属化玻璃的气密性更好，能避免在电镀铜产生的空心问题，避免漏气现象，也能提高金属化玻璃的导电率，这样一来，金属化玻璃的整体性能得到提升；同时，填充的方式加工流程简单，效率高，成本低，对环境污染小，符合环保要求。
进一步地，为了方便金属化玻璃和其他电器件电连接，在导电介质102沿厚度方向的表面上可以设有导电极(图2中未示出)，导电极和导电介质102导通。
导电介质102本身能够导电，但是通过导电极能方便形成电极连接，以使金属化玻璃和其他电器件电连接。
导电介质102的端面和玻璃基体101的表面平齐，玻璃基体101的导光孔内填充导电介质102后，需使导电介质102沿厚度方向的端面和玻璃基体101的表面平齐，以使玻璃基体101的表面平整，以方便和其他电器件匹配设置。
而导电介质102上还可以设置有导电极，导电极高出玻璃基体101的表面，但导电极高出的高度极小，可忽略不计。
并且，为使导电介质102和导电极匹配，导电介质102和导电极的材料相同，以提高导电率。具体地，导电介质102和导电极可均为银胶。银胶通过基体树脂的粘接作用把导电粒子结合在一起，形成导电通路，实现被粘材料的导电连接。
银胶的基体树脂是一种胶黏剂，可选择适宜的固化温度进行填充粘接，填充银胶的方式，还能避免电镀方式可能导致的材料变形、电子器件的热损伤和内应力的形成。而且，由于电子元件的小型化、微型化及印刷电路板的高密度化和高度集成化的迅速发展，导电银胶可以制成浆料，实现很高的线分辨率。填充银胶工艺简单，易于操作，可提高生产效率，也避免了电镀方式引起的环境污染。
本申请实施例提供的金属化玻璃，可作为玻璃转接板应用，以其应用于手机屏幕为例，将金属化玻璃设置在手机的屏幕下方，通过导光孔导光，使金属化玻璃具有光学效果，能 将光束从玻璃基体101的一侧传播至另一侧，以能从屏幕上看到显示画面；同时，通过导电介质102是金属化玻璃具备导电效果，能将金属化玻璃两侧的电器件形成电极连接，以进行电信号传输，以具备通信功能的传输。
综上，本申请实施例提供的金属化玻璃，在玻璃基体101上可以沿厚度方向开设导光孔，在导光孔内填充导电介质102，使玻璃基体101具备导电功能，还具有光学效果；电流和光束能从玻璃基体101沿厚度方向的一侧传导至另一侧。并且，在导电介质102上还可设置导电极，以通过导电极和其他电器件形成电连接，导电介质102和导电极可均采用银胶。由此形成的金属化玻璃，加工流程简单，只需要少量设备即可完成产品的加工；牢固度稳定，结合力好，可采用烧结银胶进行填充，烧结银胶内部有类似于玻璃粉的填料，高温烧结下与玻璃基体101直接烧结融化为一体；气密性好，采用烧结银胶进行金属化填充，一方面烧结银胶会与玻璃基体101烧结为一体，避免与玻璃基体101的连接处出现漏气，同时为全实心填充，避免了类似电镀铜时产生的中间空心的问题；导电率高，采用烧结银胶直接填充，导电极采用丝网印刷的方式将烧结银胶直接印刷在玻璃基体101的导电介质102上，导光孔中填充的烧结银胶与表面做导电极的烧结银胶直接连接，避免电阻率降低的问题。
另一方面，请参照图3，本申请实施例还提供一种金属化玻璃的制备方法，以制备金属化玻璃，该方法可以包括：
S100：在玻璃基体101的厚度方向上开设多个通孔。
玻璃打孔主要有激光烧蚀法、干法刻蚀、CNC钻孔、湿法刻蚀、激光辅助湿法刻蚀等，本申请实施例提供的金属化玻璃，受打孔方式的影响非常小，以上任意一种打孔方式都可以用于本申请实施例的玻璃基体101；打孔后的孔径在50um-1000um均可，玻璃基体101和通孔的厚度一致，在0.1mm-10mm均可。
其中，开设的通孔即为导光孔，可用于导光，使光束从玻璃基体101沿厚度方向的一侧通过通孔传播至另一侧。
S110：在通孔内填充导电介质102。
填充导电介质102的方式使金属化玻璃具备导电功能，其工艺过程简单，且能够有效密实导光孔，避免导光孔内填充导电介质102后产生空隙，使金属化玻璃的气密性受到影响。同时，填充的过程不会产生有毒、有害的物质，也不会排放到大气中，因此对于环境的污染小，能有效起到环保作用，满足环保要求。
填充导电介质102采用下述步骤进行：
如图4所示，S111：将玻璃基体101放置在陶瓷平台201上。
陶瓷材料内部具有蜂窝结构，因此陶瓷材料透气，向通孔内填充导电介质102时，先 将玻璃基体101放置在陶瓷平台201上。
S112：在玻璃基体101与陶瓷平台201之间放置过滤纸202。
玻璃基体101和陶瓷平台201之间间隔一层过滤纸202。
S113：采用丝网印刷的方式，在通孔内填充导电介质102，并在陶瓷平台201远离玻璃基体101的一侧对玻璃基体101表面提供负压空间。
丝网印刷采用CCD(Charge-coupled Device)对位方式，通过刮刀204，在需要填充银胶的区域，也即是通孔内下银胶，玻璃基体101上不填充区域被丝网203遮蔽；在丝网印刷过程中，在陶瓷平台201远离玻璃基体101的一侧抽真空，过滤纸202和陶瓷平台201透气，因此通孔中的空气经过滤纸202和陶瓷平台201被真空抽走，能使银胶被抽向陶瓷平台201远离玻璃基体101的一侧，并在通孔内密实，利于银胶在通孔中被填满。
S120：按预设时间烧结填充有导电介质102的玻璃基体101。
银胶填满通孔后，将玻璃基体101放置在350℃～650℃的烧结炉中烧结1h～2h，使银胶与玻璃基体101融为一体。通过高温烧结，使银胶和玻璃基体101的结合力提高，两者之间结合更牢固，更稳定。
具体的烧结温度和时间根据银胶特性及玻璃基体101熔点确定，当导电介质102采用其他材料时，可根据具体材料设置烧结温度和时间，本申请实施例对此不作具体限制。
在玻璃基体101上形成导电介质102后，玻璃基体101即具备了导电功能，电流或电信号通过导电介质102由玻璃基体101厚度方向的一侧传输至另一侧，以进行电传输。
S130：沿玻璃基体101的厚度方向研磨、抛光，以使导电介质102的端面和玻璃基体101的表面平齐。
烧结完毕后，玻璃基体101表面会有轻微的凸起或者凹陷，采用研磨、抛光工艺，将多余银胶表面与玻璃基体101表面平坦化处理，处理后表面凸起或凹陷<3um即可。
S140：在导电介质102的厚度方向的表面上印刷导电极，使导电极和导电介质102导通。
导电极能方便电连接其他电器件，以使金属化玻璃通过导电极和其他电器件形成电极连接，进行电信号的传输。
导电极在导电介质102的端面上，其高度较小，为微米级别，因此其高度可忽略。
采用丝网印刷工艺，在导电介质102端面进行银胶印刷，做相应的导电极，导电极可以与导电介质102采用同款银胶材料，也可以是其他类似银胶的导电材料。
综上，本申请实施例提供的金属化玻璃的制备方法，在玻璃基体101上打孔形成导光孔，然后通过丝网印刷方式，在玻璃基体101的导光孔中填充烧结银胶，基本作业方式为，将具有导光孔的玻璃基体101放置在透气的陶瓷平台201上，玻璃基体101与陶瓷平台201 间隔一层过滤纸202，采用CCD对位方式，在需要填充银胶的区域下银胶，不填充区域被丝网203遮蔽；在丝网印刷过程中，导光孔中的空气被真空抽走，银胶在导光孔中被填满；银胶填满后，将玻璃基体101放置在350℃～650℃的烧结炉中烧结，使银胶与玻璃基体101融为一体；烧结完毕后，玻璃基体101表面会有轻微的凸起或者凹陷，通过研磨、抛光，将多余银胶表面与玻璃基体101平坦化处理；最后采用丝网印刷工艺，在导电介质102表面进行银胶印刷，形成相应的导电极，导电极和导电介质102导通，用于使金属化玻璃和其他电器件形成电极连接，进行电传输。
以上所述仅为本申请的实施例而已，并不用于限制本申请的保护范围，对于本领域的技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本申请的保护范围之内。
工业实用性
本申请提供的金属化玻璃及其制备方法，在玻璃基体上设置多个导光孔，导光孔沿玻璃基体的厚度方向设置且贯通，通过导光孔能使玻璃基体沿厚度方向导光；导光孔内填充有导电介质，用于使玻璃基体沿厚度方向导电；玻璃基体沿厚度方向具备导电功能，又有光学效果，能够将光束和电极沿玻璃基体厚度方向的一面传导到另一面。通过填充的方式，能在导光孔内密实地填满导电介质，以使导电介质和玻璃基体的结合力更好，这样得到的金属化玻璃更稳定；且在导光孔内填实导电介质，能使形成的金属化玻璃的气密性更好，能避免在电镀铜产生的空心问题，避免漏气现象，也能提高金属化玻璃的导电率，这样一来，金属化玻璃的整体性能得到提升；同时，填充的方式加工流程简单，效率高，成本低，对环境污染小，符合环保要求。
此外，可以理解的是，本申请的金属化玻璃及其制备方法是可以重现的，并且可以用在多种工业应用中。例如，本申请的金属化玻璃及其制备方法可以用于玻璃转接板技术领域。

Claims (13)

  1. 一种金属化玻璃，其特征在于，包括：玻璃基体，所述玻璃基体上沿厚度方向设有多个贯通的导光孔，所述导光孔内填充有导电介质。
  2. 根据权利要求1所述的金属化玻璃，其特征在于，所述导电介质沿所述厚度方向的表面上设有导电极，所述导电极和所述导电介质导通。
  3. 根据权利要求1或2所述的金属化玻璃，其特征在于，所述导电介质的端面和所述玻璃基体的表面平齐。
  4. 根据权利要求2所述的金属化玻璃，其特征在于，所述导电介质和所述导电极的材料相同。
  5. 根据权利要求4所述的金属化玻璃，其特征在于，所述导电介质和所述导电极均为银胶。
  6. 一种金属化玻璃的制备方法，其特征在于，所述方法包括：
    在玻璃基体的厚度方向上开设多个通孔；
    在所述通孔内填充导电介质；
    按预设时间烧结填充有所述导电介质的所述玻璃基体。
  7. 根据权利要求6所述的金属化玻璃的制备方法，其特征在于，在所述玻璃基体的厚度方向上开设多个通孔包括：通过激光烧蚀法、干法刻蚀、CNC钻孔、湿法刻蚀、激光辅助湿法刻蚀开设多个通孔。
  8. 根据权利要求6或7所述的金属化玻璃的制备方法，其特征在于，所述按预设时间烧结填充有所述导电介质的所述玻璃基体之后，所述方法还包括：
    在所述导电介质的厚度方向的表面上印刷导电极，使所述导电极和所述导电介质导通。
  9. 根据权利要求6至8中的任一项所述的金属化玻璃的制备方法，其特征在于，所述在所述通孔内填充导电介质包括：
    将所述玻璃基体放置在陶瓷平台上；
    在所述玻璃基体与所述陶瓷平台之间放置过滤纸；
    采用丝网印刷的方式，在所述通孔内填充导电介质，并在所述陶瓷平台远离所述玻璃基体的一侧对所述玻璃基体表面提供负压空间。
  10. 根据权利要求6至9中的任一项所述的金属化玻璃的制备方法，其特征在于，所述导电介质为银胶，所述按预设时间烧结填充有所述导电介质的所述玻璃基体包括：
    采用350℃～650℃温度烧结1h～2h。
  11. 根据权利要求9所述的金属化玻璃的制备方法，其特征在于，所述采用丝网印刷的方式在所述通孔内填充导电介质包括：丝网印刷采用CCD对位方式，通过刮刀在所述通孔 内填充作为所述导电介质的银胶，所述玻璃基体上的不填充区域被丝网遮蔽。
  12. 根据权利要求8所述的金属化玻璃的制备方法，其特征在于，所述在所述导电介质的厚度方向的表面上印刷导电极之前，所述方法还包括：
    沿所述玻璃基体的厚度方向研磨、抛光，以使所述导电介质的端面和所述玻璃基体的表面平齐。
  13. 根据权利要求8所述的金属化玻璃的制备方法，其特征在于，在所述导电介质的厚度方向的表面上印刷导电极包括：采用丝网印刷工艺，在所述导电介质的端面进行银胶印刷，做出相应的导电极。
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CN111052886A (zh) * 2017-08-08 2020-04-21 纬湃技术有限公司 用于为电路板实施通孔敷镀的方法及这种电路板
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CN113658936A (zh) * 2021-08-16 2021-11-16 浙江水晶光电科技股份有限公司 一种金属化玻璃及其制备方法

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