WO2022264981A1 - 絶縁モジュール - Google Patents

絶縁モジュール Download PDF

Info

Publication number
WO2022264981A1
WO2022264981A1 PCT/JP2022/023701 JP2022023701W WO2022264981A1 WO 2022264981 A1 WO2022264981 A1 WO 2022264981A1 JP 2022023701 W JP2022023701 W JP 2022023701W WO 2022264981 A1 WO2022264981 A1 WO 2022264981A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
light emitting
light receiving
resin
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/023701
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
昌彦 有村
智一郎 外山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to DE112022003052.6T priority Critical patent/DE112022003052T5/de
Priority to JP2023529872A priority patent/JPWO2022264981A1/ja
Priority to CN202280041897.5A priority patent/CN117480622A/zh
Publication of WO2022264981A1 publication Critical patent/WO2022264981A1/ja
Priority to US18/537,324 priority patent/US20240113093A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/411—Chip-supporting parts, e.g. die pads
    • H10W70/417—Bonding materials between chips and die pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Definitions

  • the present disclosure relates to insulation modules.
  • Patent Literature 1 discloses a configuration in which a light emitting surface of a light emitting element faces a light receiving surface of a light receiving element.
  • An insulation module includes a light-emitting element having a light-emitting surface and a pad formed on the light-emitting surface, and a light-receiving surface facing the light-emitting surface with a gap therebetween.
  • a light-receiving element that constitutes a coupler; and a plate-like member that is provided between the light-emitting surface and the light-receiving surface, has translucency and insulation, and is inclined with respect to both the light-emitting surface and the light-receiving surface.
  • a wire connected to the pad wherein the pad is arranged at a portion of the light emitting surface where the distance from the plate-like member is larger than at the center.
  • An insulation module includes a light-emitting element having a light-emitting surface and a pad formed on the light-emitting surface, and a light-receiving surface facing the light-emitting surface with a gap therebetween, wherein the light-emitting element and A light-receiving element that constitutes a photocoupler, and a plate-like member that is provided between the light-emitting surface and the light-receiving surface, has translucency and insulation, and is inclined with respect to both the light-emitting surface and the light-receiving surface.
  • the light-emitting element has a rectangular shape having a longitudinal direction and a lateral direction when viewed from a direction perpendicular to the light-emitting surface
  • the light-emitting surface includes: The light emitting surface is spaced apart from the plate-like member as it goes from the first side in the longitudinal direction toward the second side, and the light emitting surface has a protruding region protruding from the second side in the longitudinal direction with respect to the light receiving element. and wherein the pad is arranged in the protruding region.
  • the amount of light received by the light receiving element can be adjusted.
  • FIG. 1 is a perspective view of the insulation module of the first embodiment.
  • FIG. 2 is a plan view schematically showing the internal structure of the insulation module of FIG. 1.
  • FIG. 3 is an enlarged view of the light emitting element of the insulation module of FIG. 2 and its surroundings.
  • FIG. 4 is an enlarged view of the light receiving element of the insulation module of FIG. 2 and its surroundings.
  • FIG. 5 is a cross-sectional view of the isolation module of FIG. 2 taken along line 5--5.
  • FIG. 6 is an enlarged view of the light-emitting element, the light-receiving element, and their surroundings in the insulation module of FIG. 7 is an enlarged view of a light emitting element and its periphery in the insulation module of FIG. 6.
  • FIG. 8 is an enlarged view of a light receiving element and its surroundings in the insulation module of FIG. 6.
  • FIG. 9 is a cross-sectional view of the insulation module of FIG. 2 taken along line 9--9.
  • 10 is an enlarged view of the light emitting surface of the light emitting element, the light receiving surface of the light receiving element, and their surroundings in the insulation module of FIG.
  • FIG. 11 is an enlarged view of the light-emitting element, the light-receiving element, and their surroundings in the insulation module of FIG.
  • FIG. 12 is a cross-sectional view of part of the light receiving element.
  • 13 is an enlarged plan view of a part of the sealing resin of the insulation module of FIG. 1.
  • FIG. 14 is an enlarged plan view of a part of the sealing resin of the insulation module of FIG.
  • FIG. 15 is a circuit diagram schematically showing the electrical configuration of the insulation module of FIG. 1.
  • FIG. FIG. 16 is a cross-sectional view showing the cross-sectional structure of part of the insulation module of the second embodiment.
  • FIG. 17 is a cross-sectional view of part of the light receiving element in the insulation module of the third embodiment.
  • FIG. 18 is a cross-sectional view of part of the light receiving element in the insulation module of the fourth embodiment.
  • FIG. 19 is a cross-sectional view showing the cross-sectional structure of part of the insulation module of the fifth embodiment.
  • FIG. 20 is a circuit diagram schematically showing the electrical configuration of the insulation module of the sixth embodiment.
  • FIG. 21 is a cross-sectional view showing a cross-sectional structure of a part of the insulation module of the modified example.
  • FIG. 22 is a cross-sectional view of part of a light receiving element and its periphery in an insulation module of a modification.
  • FIG. 23 is a plan view schematically showing the internal structure of the insulation module of the modification.
  • FIG. 24 is a cross-sectional view showing a cross-sectional structure of a part of the insulation module of the modified example.
  • FIG. 25 is a circuit diagrammatically showing the electrical configuration of the insulation module of the modification.
  • FIG. 1 and 2 show the overall structure of the insulation module 10.
  • FIG. 3 and 4 show part of the internal structure of the insulation module 10.
  • FIG. 5 shows the entire internal structure of the insulation module 10
  • FIGS. 6 to 11 show a part of the internal structure of the insulation module 10 in enlargement.
  • FIG. 12 shows a cross-sectional structure of part of a substrate and an insulating layer, which will be described later, in a light receiving element.
  • 13 shows the appearance of part of the outer circumference of the insulation module 10
  • FIG. 14 shows the appearance of another part of the outer circumference of the insulation module 10 different from that of FIG.
  • FIG. 15 shows an example of the electrical configuration of the insulation module 10. As shown in FIG.
  • the insulation module 10 is used for a gate driver that applies a drive voltage signal to the gates of switching elements. As shown in FIGS. 1 and 2, the insulation module 10 has a package structure of DIP (Dual In-line Package).
  • the insulation module 10 includes a rectangular sealing resin 80 and a plurality of terminals 41 and 51 projecting from the sealing resin 80 .
  • the insulation voltage of the insulation module 10 is, for example, 3500 Vrms or more and 7500 Vrms or less. However, the specific numerical value of the dielectric strength voltage of the insulation module 10 is not limited to this and is arbitrary.
  • the encapsulating resin 80 is made of an insulating material with light shielding properties.
  • An example of an insulating material is epoxy resin.
  • the sealing resin 80 is made of black epoxy resin.
  • the sealing resin 80 has a resin main surface 80s, a resin rear surface 80r, and first to fourth resin side surfaces 81-84.
  • the thickness direction of the sealing resin 80 is defined as the z-direction, and two mutually orthogonal directions among the directions orthogonal to the z-direction are defined as the x-direction and the y-direction, respectively.
  • the resin main surface 80s and the resin rear surface 80r constitute both end surfaces of the sealing resin 80 in the thickness direction (z direction). Both the resin main surface 80s and the resin rear surface 80r are formed in a rectangular shape when viewed from the z direction.
  • the shape of both the resin main surface 80s and the resin rear surface 80r viewed from the z-direction is a rectangular shape with long sides in the x-direction and short sides in the y-direction.
  • the first resin side surface 81 and the second resin side surface 82 form both end surfaces in the x direction. Both the first resin side surface 81 and the second resin side surface 82 extend along the y direction when viewed from the z direction.
  • a plurality of (four in this embodiment) terminals 41A to 41D are provided on the first resin side surface 81, and a plurality of (four in this embodiment) terminals 51A to 51D are provided on the second resin side surface 82.
  • both the first resin side surface 81 provided with the terminals 41A to 41D and the second resin side surface 82 provided with the terminals 51A to 51D correspond to the "terminal surface".
  • a plurality of terminals 41A to 41D protrude from the first resin side surface 81.
  • a plurality of terminals 51A to 51D protrude from the second resin side surface . Therefore, when viewed from the z direction, it can be said that the plurality of terminals 41A to 41D and the plurality of terminals 51A to 51D are arranged side by side at intervals in the x direction. In other words, the x direction can also be said to be the direction in which the terminals 41A to 41D and the terminals 51A to 51D are arranged. As shown in FIGS. 1 and 2, the plurality of terminals 51A-51D have the same shape as the plurality of terminals 41A-41D.
  • the third resin side surface 83 and the fourth resin side surface 84 constitute both end surfaces in the y direction. Both the third resin side surface 83 and the fourth resin side surface 84 are side surfaces on which the plurality of terminals 41A to 41D and 51A to 51D are not provided. Both the third resin side surface 83 and the fourth resin side surface 84 extend along the x direction when viewed from the z direction.
  • each of the terminals 41A to 41D and 51A to 51D have the same shape. More specifically, as shown in FIG. 1, each of the terminals 41A to 41D has a first portion extending in the x direction from the first resin side surface 81, a first bent portion bent downward from the first portion, and an x a second portion extending so as to incline downward as it moves away from the sealing resin 80 in the direction; a second bent portion that is bent outward from the second portion; and a third portion extending at an angle. The tilt angle of the third portion with respect to the z-direction is smaller than the tilt angle of the second portion with respect to the z-direction.
  • each of the terminals 41A-41D and 51A-51D has a so-called gull-wing type terminal.
  • the plurality of terminals 41A to 41D and 51A to 51D constitute external terminals mounted on lands provided on the wiring board (not shown) when the insulation module 10 is mounted on the wiring board, for example.
  • the terminals 41A to 41D and 51A to 51D are joined to the lands of the wiring board by a conductive joining material formed of solder, Ag (silver) paste, or the like. Thereby, the insulation module 10 is electrically connected to the wiring board.
  • Each resin side surface 81-84 has a first side surface 85 and a second side surface 86.
  • the first side surface 85 is continuous with the second side surface 86 .
  • the first side surface 85 is arranged closer to the resin main surface 80s than the resin back surface 80r in the z-direction.
  • the second side surface 86 is arranged closer to the resin rear surface 80r than the resin main surface 80s in the z-direction.
  • the first side surface 85 of the first resin side surface 81 and the first side surface 85 of the second resin side surface 82 are inclined so as to approach each other in the x direction toward the resin main surface 80s.
  • the side surface 86 and the second side surface 86 of the second resin side surface 82 are inclined so as to approach each other in the x direction toward the resin back surface 80r.
  • a first side surface 85 (not shown) of the third resin side surface 83 and a first side surface 85 of the fourth resin side surface 84 are inclined toward each other in the y direction toward the resin main surface 80s.
  • a second side surface 86 (not shown) of 83 and a second side surface 86 of the fourth resin side surface 84 are inclined so as to approach each other in the y direction toward the resin back surface 80r.
  • the four terminals 41A to 41D protrude from between the first side surface 85 and the second side surface 86 of the first resin side surface 81 respectively.
  • the four terminals 41A-41D are arranged apart from each other in the y direction.
  • the four terminals 51A to 51D protrude from between the first side surface 85 and the second side surface 86 of the second resin side surface 82 respectively.
  • the four terminals 51A to 51D are arranged apart from each other in the y direction.
  • FIG. 2 is a plan view of the insulation module 10 showing the internal structure of the insulation module 10.
  • the sealing resin 80 is indicated by a chain double-dashed line for convenience. 2
  • a first transparent resin 60P, a second transparent resin 60Q, a first plate-like member 70P, a second plate-like member 70Q, and conductive bonding materials 90P, 90Q, 100P, and 100Q, which will be described later, are shown. are omitted.
  • the insulation module 10 includes a first light emitting element 20P and a second light emitting element 20Q, a first light receiving element 30P and a second light receiving element 30Q, a first lead frame 40 and a second lead frame 50. and have.
  • a first photocoupler is composed of the first light emitting element 20P and the first light receiving element 30P
  • a second photocoupler is composed of the second light emitting element 20Q and the second light receiving element 30Q.
  • the first lead frame 40 is a lead frame electrically connected to the light emitting elements 20P and 20Q
  • the second lead frame 50 is a lead frame electrically connected to the light receiving elements 30P and 30Q. is.
  • the first lead frame 40 includes first lead frames 40A to 40D as four first lead frames.
  • the first lead frames 40A to 40D are arranged apart from each other in the y direction when viewed from the z direction.
  • the first lead frame 40A is arranged closer to the third resin side surface 83 than the first lead frames 40B to 40D.
  • the first lead frame 40A includes terminals 41A.
  • the terminal 41A is a portion of the first lead frame 40A protruding from the first resin side surface 81 to the outside of the sealing resin 80 .
  • the inner lead 42A which is the portion of the first lead frame 40A provided in the sealing resin 80, has a lead portion 42AA and a wire connection portion 42AB.
  • the lead portion 42AA is a portion continuous with the terminal 41A and extends from the first resin side surface 81 in the x direction when viewed from the z direction.
  • the lead portion 42AA has a first portion 42Aa, a second portion 42Ab, and a bent portion 42Ac.
  • the first portion 42Aa is a portion continuous with the terminal 41A.
  • the first portion 42Aa and the second portion 42Ab are connected by a bent portion 42Ac.
  • the bent portion 42Ac is provided between the first portion 42Aa and the second portion 42Ab, and the lead portion 42AA is bent from the first portion 42Aa toward the second portion 42Ab toward the resin main surface 80s (see FIG. 1). It is the part that can be That is, the second portion 42Ab is arranged closer to the resin main surface 80s of the sealing resin 80 than the first portion 42Aa in the z-direction.
  • the wire connecting portion 42AB extends in the y-direction from the second portion 42Ab of the lead portion 42AA toward the fourth resin side surface 84.
  • the wire connecting portion 42AB is arranged at a position aligned with the second portion 42Ab in the z direction. Therefore, the wire connecting portion 42AB is arranged closer to the resin main surface 80s than the first portion 42Aa.
  • the wire connecting portion 42AB is arranged near the tip of the second portion 42Ab with respect to the center of the second portion 42Ab in the x-direction. It can also be said that the second portion 42Ab has a portion that protrudes in the x direction with respect to the wire connection portion 42AB.
  • the sealing resin 80 exists on both sides of the wire connecting portion 42AB in the x direction. Therefore, it is possible to prevent the first lead frame 40A from moving in the x direction with respect to the sealing resin 80 by the wire connecting portion 42AB.
  • the first lead frame 40B is arranged near the fourth resin side surface 84 with respect to the first lead frame 40A.
  • the first lead frame 40B includes terminals 41B. That is, the terminal 41B is a portion of the first lead frame 40B protruding from the first resin side surface 81 to the outside of the sealing resin 80 .
  • the inner lead 42B which is the portion of the first lead frame 40B provided in the sealing resin 80, has a lead portion 42BA and a die pad portion 42BB.
  • the die pad portion 42BB corresponds to the "first die pad”.
  • the lead portion 42BA is a portion continuous with the terminal 41B, and extends from the first resin side surface 81 in the x direction when viewed from the z direction.
  • the x-direction length of the lead portion 42BA is equal to the x-direction length of the lead portion 42AA of the first lead frame 40A.
  • the wire connecting portion 42AB is arranged to face the lead portion 42BA in the y-direction.
  • the width of the lead portion 42BA (the length of the lead portion 42BA in the y direction) is equal to the width of the lead portion 42AA (the length of the lead portion 42AA in the y direction).
  • the difference between the width of the lead portion 42BA and the width of the lead portion 42AA is, for example, within 10% of the width of the lead portion 42BA, it can be said that the width of the lead portion 42BA is equal to the width of the lead portion 42AA.
  • the lead portion 42BA has a first portion 42Ba, a second portion 42Bb, and a bent portion 42Bc.
  • the first portion 42Ba is a portion continuous with the terminal 41B.
  • the first portion 42Ba and the second portion 42Bb are connected by a bent portion 42Bc.
  • the bent portion 42Bc is provided between the first portion 42Ba and the second portion 42Bb, and the lead portion 42BA is bent toward the resin main surface 80s from the first portion 42Ba toward the second portion 42Bb. That is, the second portion 42Bb is arranged closer to the resin main surface 80s (see FIG. 1) of the sealing resin 80 than the first portion 42Ba in the z direction.
  • the second portion 42Bb is a portion that continues to the die pad portion 42BB.
  • the width of the second portion 42Bb (the length of the second portion 42Bb in the y direction) increases as the end of the second portion 42Bb closer to the lead portion 42AA of the y-direction ends approaches the die pad portion 42BB. It has a slope.
  • the die pad portion 42BB is arranged closer to the second resin side surface 82 than the lead portion 42BA in the x direction.
  • the die pad portion 42BB is arranged so as to partially overlap the wire connection portion 42AB.
  • the die pad portion 42BB is arranged at a position not overlapping with the lead portion 42AA of the first lead frame 40A when viewed in the y direction.
  • the die pad portion 42BB is arranged closer to the fourth resin side surface 84 than the lead portion 42AA in the y direction.
  • the shape of the die pad portion 42BB viewed from the z-direction is a substantially rectangular shape with short sides in the x-direction and long sides in the y-direction.
  • the die pad portion 42BB protrudes from both sides of the lead portion 42BA to both sides in the y direction when viewed in the x direction.
  • the amount of protrusion of the die pad portion 42BB from the lead portion 42BA toward the third resin side surface 83 is greater than the amount of protrusion of the lead portion 42BA of the die pad portion 42BB toward the fourth resin side surface 84 .
  • the lead portion 42BA is arranged closer to the fourth resin side surface 84 with respect to the center of the die pad portion 42BB in the y direction.
  • a protrusion 43B is provided on the die pad portion 42BB.
  • the projection 43B extends in the y-direction toward the third resin side surface 83 from a corner near the second resin side surface 82 and near the third resin side surface 83 among the four corners of the die pad portion 42BB.
  • the protrusion 43B is provided so as to overlap with the wire connection portion 42AB when viewed from the x direction.
  • the projection 43B is provided so as not to overlap the lead portion 42AA when viewed from the x direction. Therefore, the tip of the projection 43B is provided at a position separated from the third resin side surface 83 in the y direction. That is, the projection 43B is not exposed from the third resin side surface 83.
  • the sealing resin 80 exists on both sides of the protrusion 43B in the x direction. Therefore, it is possible to prevent the first lead frame 40B from moving in the x direction with respect to the sealing resin 80 by the projection 43B.
  • the first lead frame 40C is arranged near the fourth resin side surface 84 with respect to the first lead frame 40B.
  • the first lead frame 40C includes terminals 41C. That is, the terminal 41C is a portion of the first lead frame 40C protruding from the first resin side surface 81 to the outside of the sealing resin 80 .
  • An inner lead 42C which is a portion of the first lead frame 40C provided in the sealing resin 80, has a lead portion 42CA and a die pad portion 42CB.
  • the die pad portion 42CB corresponds to the "first die pad”.
  • the shape of the lead portion 42CA and the die pad portion 42CB when viewed from the z direction is such that the shape of the lead portion 42BA and the die pad portion 42BB when viewed from the z direction is different from the center line along the x direction at the center of the sealing resin 80 in the y direction. It becomes symmetrical with the shape. Further, the bent shape of the lead portion 42CA is the same as that of the lead portion 42BA. Therefore, detailed description of the lead portion 42CA and the die pad portion 42CB is omitted.
  • the lead portion 42CA like the lead portion 42BA, has a first portion 42Ca, a second portion 42Cb, and a bent portion 42Cc.
  • the die pad portion 42CB has projections 43C, like the die pad portion 42BB. When viewed from the z direction, the die pad portion 42CB and the die pad portion 42BB of the first lead frame 40B are aligned in the x direction and are spaced apart from each other in the y direction.
  • the first lead frame 40D is arranged near the fourth resin side surface 84 with respect to the first lead frame 40C.
  • the first lead frame 40D includes terminals 41D. That is, the terminal 41D is a portion of the first lead frame 40D protruding from the first resin side surface 81 to the outside of the sealing resin 80. As shown in FIG.
  • Inner leads 42D which are portions of the first lead frame 40D provided in the sealing resin 80, have lead portions 42DA and wire connection portions 42DB.
  • the shape of the lead portion 42DA and the wire connection portion 42DB when viewed from the z direction is such that the lead portion 42AA and the wire connection portion when viewed from the z direction are different from the center line along the x direction at the center of the sealing resin 80 in the y direction. It becomes symmetrical with the shape of 42AB.
  • the bent shape of the lead portion 42DA is the same as that of the lead portion 42AA. That is, the lead portion 42DA is a portion continuous with the terminal 41D, and has a first portion 42Da, a second portion 42Db, and a bent portion 42Dc, like the lead portion 42AA. Therefore, detailed description of the lead portion 42DA and the wire connection portion 42DB is omitted.
  • the second lead frame 50 includes second lead frames 50A to 50D as four second lead frames.
  • the second lead frames 50A to 50D are arranged apart from each other in the y direction when viewed from the z direction.
  • the insulation module 10 also includes a relay frame 50E.
  • the second lead frame 50A is arranged closer to the third resin side surface 83 than the second lead frames 50B to 50D.
  • the second lead frame 50A includes terminals 51A.
  • the terminal 51A is a portion of the second lead frame 50A protruding outside the sealing resin 80 from the second resin side surface 82 .
  • the terminal 51A is arranged at a position overlapping the terminal 41A when viewed in the x direction.
  • Inner leads 52A which are portions of the second lead frame 50A provided in the sealing resin 80, extend in the x direction.
  • the tip of the inner lead 52A is positioned closer to the second resin side surface 82 than the center of the sealing resin 80 in the x direction when viewed from the z direction. More specifically, the tip of the inner lead 52A is positioned closer to the second resin side surface 82 than the die pad portion 42BB of the first lead frame 40B.
  • the inner lead 52A When viewed from the x direction, the inner lead 52A is arranged at a position overlapping the lead portion 42AA of the first lead frame 40A.
  • the distal end portion of the inner lead 52A has a narrow portion 52AA where the width of the inner lead 52A (the length of the inner lead 52A in the y direction) is narrowed.
  • the narrow portion 52AA is formed by recessing toward the third resin side surface 83 from the end portion closer to the fourth resin side surface 84 among the y-direction end portions of the inner lead 52A.
  • the inner lead 52A has a first portion 52Aa, a second portion 52Ab, and a bent portion 52Ac.
  • the first portion 52Aa is a portion continuous with the terminal 51A.
  • the first portion 52Aa and the second portion 52Ab are connected by a bent portion 52Ac.
  • the bent portion 52Ac is provided between the first portion 52Aa and the second portion 52Ab, and the inner lead 52A is bent toward the resin back surface 80r (see FIG. 1) from the first portion 52Aa toward the second portion 52Ab. part. That is, the second portion 52Ab is arranged closer to the resin back surface 80r of the sealing resin 80 than the first portion 52Aa in the z direction.
  • the narrow portion 52AA is formed continuously with the second portion 52Ab. Therefore, the narrow portion 52AA is arranged closer to the resin back surface 80r than the first portion 52Aa in the z direction.
  • the second lead frame 50B is arranged closer to the fourth resin side surface 84 than the second lead frame 50A.
  • the second lead frame 50B includes terminals 51B. That is, the terminal 51B is a portion of the second lead frame 50B protruding from the second resin side surface 82 to the outside of the sealing resin 80 .
  • the terminal 51B is arranged at a position overlapping the terminal 41B when viewed in the x direction.
  • the inner lead 52B which is the portion of the second lead frame 50B provided in the sealing resin 80, has a lead portion 52BA and a wire connection portion 52BB.
  • the lead portion 52BA is a portion continuous with the terminal 51B, and extends from the second resin side surface 82 in the x direction when viewed from the z direction.
  • the x-direction length of the lead portion 52BA is shorter than the x-direction length of the inner lead 52A of the second lead frame 50A.
  • the width of the lead portion 52BA (the length of the lead portion 52BA in the y direction) is the width of the portion of the inner lead 52A other than the narrow portion 52AA (the portion of the inner lead 52A other than the narrow portion 52AA). in the y direction).
  • the width of the lead portion 52BA is equal to that of the inner lead 52A. It can be said that it is equal to the width of the portion other than the narrow width portion 52AA.
  • the lead portion 52BA has a first portion 52Ba, a second portion 52Bb, and a bent portion 52Bc.
  • the first portion 52Ba is a portion continuous with the terminal 51B.
  • the first portion 52Ba and the second portion 52Bb are connected by a bent portion 52Bc.
  • the bent portion 52Bc is provided between the first portion 52Ba and the second portion 52Bb, and is bent toward the resin back surface 80r (see FIG. 1) as the inner lead 52A moves from the first portion 52Ba to the second portion 52Bb. part. That is, the second portion 52Bb is arranged closer to the resin rear surface 80r of the sealing resin 80 than the first portion 52Ba in the z-direction.
  • the wire connecting portion 52BB is arranged closer to the first resin side surface 81 than the second portion 52Bb of the lead portion 52BA.
  • the shape of the wire connecting portion 52BB viewed from the z-direction is substantially trapezoidal.
  • the width of the wire connection portion 52BB (the length of the wire connection portion 52BB in the y direction) is larger than the width of the lead portion 52BA (the length of the lead portion 52BA in the y direction).
  • the wire connection portion 52BB protrudes on both sides in the y direction with respect to the lead portion 52BA.
  • the end portion closer to the lead portion 52BA is tapered such that the width of the wire connection portion 52BB increases with increasing distance from the lead portion 52BA.
  • the sealing resin 80 exists on both sides in the x direction of the portion of the wire connecting portion 52BB that protrudes from the lead portion 52BA. Therefore, it is possible to suppress the movement of the second lead frame 50B in the x-direction with respect to the sealing resin 80 by the wire connection portion 52BB.
  • the second lead frame 50C is arranged closer to the fourth resin side surface 84 than the second lead frame 50B.
  • the second lead frame 50C includes terminals 51C.
  • the terminal 51C is a portion of the second lead frame 50C protruding outside the sealing resin 80 from the second resin side surface 82 .
  • the terminal 51C is arranged at a position overlapping the terminal 41C when viewed in the x direction.
  • Inner leads 52C which are portions of the second lead frame 50C provided in the sealing resin 80, have lead portions 52CA and wire connection portions 52CB.
  • the shape of the lead portion 52CA and the wire connection portion 52CB when viewed from the z direction is different from the center line along the x direction at the center of the sealing resin 80 in the y direction. It is line-symmetrical to the shape of the lead portion 52BA and the wire connection portion 52BB.
  • the bent shape of the lead portion 52CA is the same as that of the lead portion 52BA. That is, the lead portion 52CA has a first portion 52Ca, a second portion 52Cb, and a bent portion 52Cc, like the lead portion 52BA. Therefore, detailed description of the lead portion 42CA and the die pad portion 42CB is omitted.
  • the second lead frame 50D is arranged closer to the fourth resin side surface 84 than the second lead frame 50C.
  • the second lead frame 50D includes terminals 51D. That is, the terminal 51D is a portion of the second lead frame 50D protruding from the second resin side surface 82 to the outside of the sealing resin 80 .
  • the terminal 51D is arranged at a position overlapping the terminal 41D when viewed in the x direction.
  • the inner lead 52D which is the portion of the second lead frame 50D provided in the sealing resin 80, has a lead portion 52DA and a die pad portion 52DB.
  • the die pad portion 52DB corresponds to the "second die pad”.
  • the lead portion 52DA is a portion continuous with the terminal 51D, and extends from the second resin side surface 82 in the x direction when viewed from the z direction.
  • the x-direction length of the lead portion 52DA is longer than the x-direction length of the inner lead 52C of the second lead frame 50C and shorter than the x-direction length of the inner lead 52A of the second lead frame 50A.
  • the width of the lead portion 52DA (the length of the lead portion 52DA in the y direction) is equal to the width of the lead portion 52CA of the second lead frame 50C (the length of the lead portion 52CA in the y direction).
  • the width of the lead portion 52DA is equal to the width of the lead portion 52CA.
  • the lead portion 52DA has a first portion 52Da, a second portion 52Db, and a bent portion 52Dc.
  • the first portion 52Da is a portion continuous with the terminal 51D.
  • the first portion 52Da and the second portion 52Db are connected by a bent portion 52Dc.
  • the bent portion 52Dc is provided between the first portion 52Da and the second portion 52Db, and is bent toward the resin back surface 80r (see FIG. 1) as the lead portion 52DA goes from the first portion 52Da to the second portion 52Db. part. That is, the second portion 52Db is arranged closer to the resin rear surface 80r of the sealing resin 80 than the first portion 52Da in the z direction.
  • the die pad portion 52DB is arranged closer to the first resin side surface 81 than the lead portion 52DA.
  • the end portion closer to the lead portion 52DA is aligned with the lead portion 52DA in the y-direction.
  • the end portion farther from the lead portion 52DA is provided at a position adjacent to the narrow portion 52AA of the second lead frame 50A in the y-direction. That is, the die pad portion 52DB extends closer to the third resin side surface 83 than the second lead frame 50B. It can also be said that the die pad portion 52DB is arranged to face the second lead frames 50B and 50C in the x direction. As shown in FIG.
  • the die pad portion 52DB has a shape in which the y direction is the longitudinal direction and the x direction is the lateral direction.
  • the width of the die pad portion 52DB (the length of the die pad portion 52DB in the x direction) is larger than the width of the lead portion 52DA.
  • the die pad section 52DB has a first element placement section 53D and a second element placement section 54D.
  • the first element placement portion 53D and the second element placement portion 54D are arranged side by side with a gap in the y direction.
  • the first element placement portion 53D is a region of the die pad portion 52DB opposite to the lead portion 52DA. This is the area closer to 52DA.
  • a through hole 55D is provided between the first element placement portion 53D and the second element placement portion 54D in the y direction.
  • the through-hole 55D has a circular shape when viewed in the z direction.
  • a sealing resin 80 is filled in the through hole 55D. The sealing resin 80 in the through hole 55D can suppress the movement of the second lead frame 50D with respect to the sealing resin 80 in the direction perpendicular to the z-direction.
  • Both the first element placement portion 53D and the second element placement portion 54D are directed toward the second resin side surface 82 toward the second resin side surface 82 toward the end portion closer to the lead portion 52DA among the both end portions in the y direction of the die pad portion 52DB in the x direction. It has protruding portions 53Da and 54Da extending to the . Between the projecting portions 53Da and 54Da in the y direction, there is a recess 56D recessed in the x direction when viewed from the z direction. When viewed from the z-direction, the recess 56D opens toward the first resin side surface 81 in the x-direction.
  • the bottom surface 56Da of the recess 56D is closer to the second resin side surface 82 than the end surface closer to the first resin side surface 81 at the end portion closer to the lead portion 52DA among the y-direction end portions of the die pad portion 52DB. located in The recessed portion 56D and the through hole 55D are spaced apart from each other in the x direction while being aligned in the y direction.
  • a protrusion 57D and suspension leads 58D are provided on the outer periphery of the die pad portion 52DB.
  • the projection 57D extends in the y direction from the end of the die pad portion 52DB farther from the lead portion 52DA, in other words, from the tip portion of the die pad portion 52DB toward the third resin side surface 83 in the y direction.
  • the protrusion 57D is provided closer to the first resin side surface 81 than the center of the die pad portion 52DB in the x direction.
  • the projection 57D is provided so as to overlap both the first lead frame 40A and the second lead frame 50A when viewed in the x direction.
  • the protrusion 57D is located between the first lead frame 40A and the second lead frame 50A in the x direction.
  • the width of the protrusion 57D (the length of the protrusion 57D in the x direction) is larger than the width of the lead portion 52DA.
  • the width of the projection 57D is arbitrary.
  • a sealing resin 80 is provided on both sides of the projection 57D in the x direction. Therefore, it is possible to suppress the movement of the die pad portion 52DB in the x direction with respect to the sealing resin 80 .
  • the suspension lead 58D extends in the x-direction toward the second resin side surface 82 from the end (tip of the die pad 52DB) farther from the lead 52DA among the y-direction ends of the die pad 52DB.
  • the suspension lead 58D is exposed from the second resin side surface 82.
  • the suspension lead 58D is provided at a position overlapping the first element placement portion 53D when viewed from the x direction.
  • the suspension lead 58D is arranged between the second lead frame 50A and the second lead frame 50B in the y direction.
  • the width of the suspension lead 58D (the length of the suspension lead 58D in the y direction) is smaller than the width of the lead portion 52DA.
  • both the die pad portions 42BB and 42CB of the first lead frames 40B and 40C are arranged at positions overlapping the die pad portion 52DB when viewed from the z direction.
  • the die pad portions 42BB and 42CB are arranged closer to the resin main surface 80s (see FIG. 5) than the die pad portion 52DB.
  • the die pad portion 52DB is arranged so as to overlap both the die pad portions 42BB and 42CB when viewed in the z direction.
  • the die pad portion 52DB is arranged closer to the resin back surface 80r (see FIG. 5) than the die pad portions 42BB and 42CB.
  • the die pad portion 42BB is arranged at a position overlapping the first element placement portion 53D of the die pad portion 52DB when viewed from the z direction.
  • the die pad portion 42CB is arranged at a position overlapping the second element placement portion 54D of the die pad portion 52DB when viewed in the z direction.
  • both the die pad portions 42BB and 42CB are arranged at different positions from both the through hole 55D and the concave portion 56D when viewed from the z direction.
  • the die pad portion 52DB is formed longer than the die pad portions 42BB and 42CB in the x direction. That is, when viewed from the z-direction, the die pad section 52DB has a portion protruding in the x-direction beyond the die pad sections 42BB and 42CB.
  • the die pad portion 42BB is arranged so that the entire surface thereof overlaps with the first element placement portion 53D of the die pad portion 52DB.
  • the die pad portion 42CB is arranged so that its entire surface overlaps with the second element placement portion 54D of the die pad portion 52DB. As shown in FIG. 2, the projection 43B of the die pad portion 42BB is arranged closer to the second resin side surface 82 than the projection 57D when viewed in the z direction.
  • the relay frame 50E is arranged to face the die pad portion 52DB in the x direction.
  • the relay frame 50E is arranged closer to the second resin side surface 82 than the die pad portion 52DB.
  • the relay frame 50E does not have external terminals.
  • the relay frame 50E has a wire connection portion 51E, a first suspension lead 52E, and a second suspension lead 53E.
  • the wire connection portion 51E extends in the y direction.
  • the shape of the wire connection portion 51E viewed from the z-direction is a rectangular shape with long sides in the y-direction and short sides in the x-direction.
  • the width of the wire connection portion 51E (the length of the wire connection portion 51E in the x direction) is equal to the width of the lead portion 52CA (the length of the lead portion 52CA in the y direction). It can also be said that the width of the wire connecting portion 51E is equal to the width of the lead portion 52BA (the length of the lead portion 52BA in the y direction).
  • the width of the wire connection portion 51E is, for example, 10% or less of the width of the wire connection portion 51E, the width of the wire connection portion 51E is equal to that of the lead portion. 52CA (the width of the lead portion 52BA).
  • the wire connection portion 51E is arranged to face the second lead frames 50B and 50C in the x direction. That is, the wire connection portion 51E is provided so as to overlap the second lead frames 50B and 50C when viewed from the x direction.
  • the wire connection portion 51E is arranged between the second lead frames 50B and 50C and the die pad portion 52DB in the x direction. Therefore, it can be said that the wire connection portion 51E is arranged to face the die pad portion 52DB in the x direction.
  • the first hanging lead 52E extends in the x-direction toward the second resin side surface 82 from the end closer to the lead portion 52DA of the second lead frame 50D among the y-direction end portions of the wire connection portion 51E.
  • the first suspension lead 52E is arranged between the lead portion 52DA and the second lead frame 50C in the y direction.
  • the first suspension lead 52E is exposed from the second resin side surface 82. As shown in FIG.
  • the second suspension lead 53E extends in the x-direction from substantially the center of the wire connection portion 51E in the y-direction toward the second resin side surface 82 .
  • the second suspension lead 53E is arranged between the second lead frame 50C and the second lead frame 50B in the y direction.
  • the second suspension lead 53E is exposed from the second resin side surface 82. As shown in FIG.
  • the first light emitting element 20P is mounted on the die pad portion 42BB of the first lead frame 40B
  • the second light emitting element 20Q is mounted on the die pad portion 42CB of the first lead frame 40C.
  • the first light emitting element 20P is arranged in the center of the die pad portion 42BB in the y direction.
  • the first light emitting element 20P is arranged closer to the second resin side surface 82 (see FIG. 2) with respect to the center of the die pad portion 42BB in the x direction. More specifically, the first light emitting element 20P is arranged at a position overlapping the center of the die pad portion 42BB in the x direction when viewed from the z direction.
  • the center of the first light emitting element 20P in the x direction is positioned closer to the second resin side surface 82 than the center of the die pad portion 42BB in the x direction.
  • the layout of the second light emitting element 20Q with respect to the die pad section 42CB is the same as the layout of the first light emitting element 20P with respect to the die pad section 42BB.
  • the first light emitting element 20P and the second light emitting element 20Q are aligned in the x direction and arranged apart from each other in the y direction. In this embodiment, the distance between the first light emitting element 20P and the second light emitting element 20Q is greater than the length of the first light emitting element 20P in the y direction.
  • the cross-sectional structure of the die pad portion 42BB, the configuration of the first light emitting elements 20P, and the manner of arrangement of the first light emitting elements 20P on the die pad portion 42BB will be described with reference to FIGS.
  • the cross-sectional structure of the die pad portion 42CB, the configuration of the second light emitting element 20Q, and the manner in which the second light emitting element 20Q is arranged in the die pad portion 42CB are the same as those of the first light emitting element 20P and the die pad portion 42BB. detailed description is omitted.
  • the die pad section 42BB has a first surface 42Bs and a second surface 42Br facing opposite sides in the thickness direction of the die pad section 42CB.
  • the first surface 42Bs is a surface forming a mounting surface on which the first light emitting element 20P is mounted. That is, in the present embodiment, the first surface 42Bs corresponds to the "mounting surface of the first die pad".
  • the first surface 42Bs faces the same side as the resin back surface 80r of the sealing resin 80 (see FIG. 5).
  • the second surface 42Br faces the same side as the resin main surface 80s of the sealing resin 80 (see FIG. 5).
  • the second surface 42Br is arranged apart from the resin main surface 80s in the z direction. That is, the second surface 42Br is not exposed from the resin main surface 80s.
  • the die pad portion 42BB has a main metal layer 44B and a plated layer 45B formed on the outer surface of the main metal layer 44B.
  • the main metal layer 44B is made of a metal material containing Cu, for example.
  • the plated layer 45B is made of a material containing Ni (nickel), Cr (chromium), or the like. As shown in FIG. 7, the plated layer 45B is sufficiently thin compared to the main metal layer 44B.
  • a recess 46B recessed from the first surface 42Bs toward the second surface 42Br is provided in a portion of the first surface 42Bs of the die pad portion 42BB.
  • the concave portion 46B is provided in the center of the die pad portion 42BB in the x direction.
  • the recess 46B extends in the y direction when viewed from the z direction.
  • the recess 46B is a V-shaped groove.
  • the depth of the recess 46B is deeper than the thickness of the plating layer 45B.
  • the plating layer 45B is also formed inside the recess 46B.
  • the recess 46B corresponds to the "first recess".
  • the first light emitting element 20P is arranged at a position overlapping the concave portion 46B in the die pad portion 42BB when viewed from the z direction.
  • the first light emitting element 20P has an element main surface 20Ps and an element rear surface 20Pr facing opposite sides in the thickness direction.
  • the element main surface 20Ps faces the same side as the first surface 42Bs of the die pad portion 42BB, and the element rear surface 20Pr faces the same side as the second surface 42Br (see FIG. 6).
  • a first electrode 21P is provided on the element main surface 20Ps.
  • a second electrode 22P is provided on the element rear surface 20Pr.
  • the second electrode 22P is provided, for example, over the entire element back surface 20Pr.
  • the element main surface 20Ps constitutes a light emitting surface.
  • the first light emitting element 20P emits light downward from the element main surface 20Ps.
  • the first light emitting element 20P emits light of a first wavelength.
  • An example of light of the first wavelength is light of wavelengths including infrared.
  • the element main surface 20Ps corresponds to the "light emitting surface" and the "first light emitting surface”.
  • the ends of the z-direction end portions of the first light emitting element 20P that are closer to the element main surface 20Ps taper toward each other toward the element main surface 20Ps. formed in the shape of Therefore, the area of the element main surface 20Ps of the first light emitting element 20P is smaller than the area of the element back surface 20Pr.
  • the first light emitting element 20P is bonded to the first surface 42Bs of the die pad section 42BB with a conductive bonding material 90P such as solder or Ag (silver) paste.
  • a conductive bonding material 90P such as solder or Ag (silver) paste.
  • the first light emitting element 20P is bonded to the die pad section 42BB by die bonding the first light emitting element 20P to the die pad section 42BB using the conductive bonding material 90P.
  • the conductive bonding material 90P is interposed between the first surface 42Bs of the die pad portion 42BB and the element rear surface 20Pr of the first light emitting element 20P.
  • the conductive bonding material 90P corresponds to the "first bonding material".
  • the conductive bonding material 90P has a first bonding region 91P interposed between the element rear surface 20Pr of the first light emitting element 20P and the first surface 42Bs of the die pad portion 42BB, and the conductive bonding material 90P protrudes from the first light emitting element 20P when viewed from the z direction. and a second bonding region 92P that is a region that is located on the outer surface of the first light emitting element 20P and is bonded to the outer surface of the first light emitting element 20P.
  • the first bonding region 91P enters the recess 46B of the die pad portion 42BB. That is, the first bonding region 91P is interposed between the element rear surface 20Pr of the first light emitting element 20P and the first surface 42Bs of the die pad portion 42BB and enters the recess 46B.
  • the second junction region 92P is provided so that the thickness of the second junction region 92P becomes thinner with increasing distance from the outer surface of the first light emitting element 20P.
  • the second bonding region 92P is formed over the entire circumference of the first light emitting element 20P when viewed from the z direction.
  • the surface 92s of the second bonding region 92P is formed in a curved shape so that the center of curvature is located below the surface 92s, that is, the center of curvature is located on the opposite side of the surface 92s from the die pad portion 42BB in the z direction.
  • a surface 92s of the second joint region 92P is formed by combining a plurality of curved surfaces. Each curved surface is formed such that the center of curvature is located on the side opposite to the die pad portion 42BB with respect to the surface 92s.
  • the curvature of the curved surface of the region adjacent to the first light emitting element 20P is greater than the curvature of the curved surface of the region far from the first light emitting element 20P of the surface 92s of the second bonding region 92P. is also big.
  • the height HS of the portion of the second junction region 92P in contact with the outer side surface of the first light emitting element 20P is 1/2 or less of the height H1 of the first light emitting element 20P.
  • the side surface closer to the first resin side surface 81 (see FIG. 5) of the both end surfaces of the first light emitting element 20P in the x direction has The height HS1 of the contacting second bonding region 92P is smaller than half the height H1.
  • the height HS2 of the second bonding region 92P in contact with the side surface closer to the second resin side surface 82 see FIG.
  • the heights HS1 and HS2 are defined by the height from the first surface 42Bs of the die pad portion 42BB of the portion of the second junction region 92P in contact with the outer surface of the first light emitting element 20P. That is, it can be said that the height HS is the thickness of the portion of the second junction region 92P that is in contact with the outer surface of the first light emitting element 20P.
  • the height H1 is defined by the distance in the z direction between the first surface 42Bs of the die pad portion 42BB and the element main surface 20Ps of the first light emitting element 20P.
  • the die pad portion 42CB of the first lead frame 40C has a first surface 42Cs and a second surface 42Cr (both of which are shown in FIG. 9), like the die pad portion 42BB.
  • the first surface 42Cs faces the same side as the first surface 42Bs of the die pad portion 42BB
  • the second surface 42Cr faces the same side as the second surface 42Br of the die pad portion 42BB.
  • the die pad portion 42CB is arranged at a position aligned with the die pad portion 42BB.
  • the second light emitting element 20Q emits light of a second wavelength different from the first wavelength of the first light emitting element 20P.
  • An example of light of the second wavelength is light of wavelengths including red.
  • the light of the first wavelength from the first light emitting element 20P and the light of the second wavelength from the second light emitting element 20Q can be changed arbitrarily.
  • both the first light emitting element 20P and the second light emitting element 20Q may be configured to emit visible light.
  • the first light emitting element 20P may be configured to emit light of wavelengths including blue
  • the second light emitting element 20Q may be configured to emit light of wavelengths including red.
  • the light of the first wavelength from the first light emitting element 20P and the light of the second wavelength from the second light emitting element 20Q are lights having different wavelengths, but the present invention is not limited to this.
  • the first light emitting element 20P and the second light emitting element 20Q may be configured to emit light of the same wavelength.
  • both the first light emitting element 20P and the second light emitting element 20Q are configured to emit light including red wavelengths.
  • both the first light emitting element 20P and the second light emitting element 20Q are configured to emit light of wavelengths including infrared rays.
  • the second light emitting element 20Q has an element main surface 20Qs and an element rear surface 20Qr, like the first light emitting element 20P.
  • the element main surface 20Qs constitutes a light emitting surface.
  • the element main surface 20Qs faces the same side as the element main surface 20Ps of the first light emitting element 20P, and the element rear surface 20Qr faces the same side as the element rear surface 20Pr of the first light emitting element 20P.
  • the element main surface 20Qs corresponds to the "light emitting surface” and the "second light emitting surface".
  • the second light emitting element 20Q is bonded to the first surface 42Cs (see FIG. 9) of the die pad section 42CB with a conductive bonding material 90Q such as solder or Ag paste.
  • a conductive bonding material 90Q such as solder or Ag paste.
  • the second light emitting element 20Q is bonded to the die pad section 42CB by die bonding the second light emitting element 20Q to the die pad section 42CB using the conductive bonding material 90Q.
  • the bonding mode between the second light emitting element 20Q and the die pad portion 42CB by the conductive bonding material 90Q is the same as that of the conductive bonding material 90P.
  • both the first light receiving element 30P and the second light receiving element 30Q are mounted on the die pad portion 52DB of the second lead frame 50D.
  • the first light receiving element 30P is mounted on the first element placement portion 53D of the die pad portion 52DB
  • the second light receiving element 30Q is mounted on the second element placement portion 54D.
  • the first light-receiving element 30P and the second light-receiving element 30Q are aligned in the x-direction and spaced apart from each other in the y-direction.
  • the through hole 55D and the recess 56D of the die pad portion 52DB are positioned between the first light receiving element 30P and the second light receiving element 30Q in the y direction.
  • the shape of the first light receiving element 30P viewed from the z direction is rectangular.
  • the shape of the first light receiving element 30P viewed from the z direction is a rectangular shape with short sides in the x direction and long sides in the y direction.
  • the first light receiving element 30P is configured to receive light (light of the first wavelength) from the first light emitting element 20P.
  • the first light receiving element 30P includes a first semiconductor region that receives light from the first light emitting element 20P and a second semiconductor region that generates a signal based on the received light.
  • a photoelectric conversion element is provided in the first semiconductor region. Photodiodes, for example, are used as photoelectric conversion elements.
  • the second semiconductor region is formed by, for example, LSI (Large Scale Integration).
  • the first light receiving element 30P of the present embodiment is an element in which the function of receiving light from the first light emitting element 20P and the function of generating a signal from the received light are integrated.
  • the first semiconductor region and the second semiconductor region are formed side by side in the x-direction.
  • the first semiconductor region is formed in a portion of the first light receiving element 30P near the first resin side surface 81 (see FIG. 2).
  • the second semiconductor region is formed in a portion of the first light receiving element 30P near the second resin side surface 82 .
  • the area of the first semiconductor region viewed in the z-direction is smaller than the area of the second semiconductor region viewed in the z-direction.
  • the x-direction dimension of the first semiconductor region is smaller than the x-direction dimension of the second semiconductor region.
  • the first semiconductor region of the first light receiving element 30P forms a light receiving surface 33P.
  • the area of the first light receiving element 30P viewed from the z direction is larger than the area of the first light emitting element 20P viewed from the z direction.
  • the area of the first light receiving element 30P viewed from the z direction is twice or more, preferably five times or more the area of the first light emitting element 20P viewed from the z direction.
  • the area of the first light receiving element 30P viewed from the z direction is approximately six times the area of the first light emitting element 20P viewed from the z direction.
  • the first light receiving element 30P has an element main surface 30Ps and an element back surface 30Pr.
  • the element main surface 30Ps faces the same side as the first surface 52Ds of the die pad portion 52DB, and the element rear surface 30Pr faces the same side as the second surface 52Dr of the die pad portion 52DB.
  • Element main surface 30Ps includes light receiving surface 33P.
  • the configuration of the second light receiving element 30Q is the same as that of the first light receiving element 30P, and is an element in which a photoelectric conversion element and an LSI are integrated.
  • the second light receiving element 30Q is configured to receive light (light of the second wavelength) from the second light emitting element 20Q.
  • a light-receiving surface 33Q is formed on the second light-receiving element 30Q in the same manner as the first light-receiving element 30P.
  • the light-receiving surface 33Q of the second light-receiving element 30Q and the light-receiving surface 33P of the first light-receiving element 30P are aligned in the x-direction and spaced apart in the y-direction.
  • the second light receiving element 30Q has an element main surface 30Qs and an element rear surface 30Qr, like the first light receiving element 30P.
  • the element principal surface 30Qs faces the same side as the element principal surface 30Ps of the first light receiving element 30P
  • the element rear surface 30Qr faces the same side as the element rear surface 30Pr of the first light receiving element 30P.
  • the first light emitting element 20P is electrically connected to the first lead frames 40A and 40B
  • the second light emitting element 20Q is electrically connected to the first lead frames 40C and 40D.
  • the first electrode 21P of the first light emitting element 20P is connected to the first lead frame 40A by two wires WA1. Thereby, the first electrode 21P and the first lead frame 40A are electrically connected.
  • Two wires WA1 connect the first electrode 21P and the wire connecting portion 42AB in the first lead frame 40A.
  • the two wires WA1 are provided so as to separate from each other from the first electrode 21P toward the wire connecting portion 42AB.
  • the wire connection portion 42AB is arranged near the first resin side surface 81 and near the third resin side surface 83 with respect to the first electrode 21P. Therefore, when viewed from the z direction, the two wires WA1 extend obliquely toward the third resin side surface 83 from the first electrode 21P toward the wire connecting portion 42AB.
  • the second electrode 22P of the first light emitting element 20P is electrically connected to the first lead frame 40B by being joined to the first lead frame 40B with a conductive joining material 90P.
  • the first electrode 21P is an anode electrode and the second electrode 22P is a cathode electrode. Therefore, the terminal 41A of the first lead frame 40A constitutes the anode terminal of the first light emitting element 20P, and the terminal 41B of the first lead frame 40B constitutes the cathode terminal of the first light emitting element 20P.
  • the first electrode 21Q of the second light emitting element 20Q is connected to the first lead frame 40D by two wires WA2. Thereby, the first electrode 21Q and the first lead frame 40D are electrically connected.
  • Two wires WA2 connect the first electrode 21Q and the wire connection portion 42DB in the first lead frame 40D.
  • the two wires WA2 are provided so as to separate from each other as they go from the first electrode 21Q to the wire connecting portion 42DB.
  • the wire connection portion 42DB is arranged near the first resin side surface 81 and near the fourth resin side surface 84 with respect to the first electrode 21Q. Therefore, when viewed from the z-direction, the two wires WA2 extend obliquely toward the fourth resin side surface 84 from the first electrode 21Q toward the wire connection portion 42DB.
  • the second electrode 22Q of the second light emitting element 20Q is electrically connected to the first lead frame 40C by being joined to the first lead frame 40C with a conductive joining material 90Q.
  • the first electrode 21Q is an anode electrode and the second electrode 22Q is a cathode electrode. Therefore, the terminal 41D of the first lead frame 40D constitutes the anode terminal of the second light emitting element 20Q, and the terminal 41C of the first lead frame 40C constitutes the cathode terminal of the second light emitting element 20Q.
  • wires WA1 and WA2 are bonding wires formed, for example, by a wire bonding device (not shown).
  • Wires WA1 and WA2 are made of a conductive material such as Cu, Al (aluminum), Au (gold), Ag, or the like.
  • the wires WA1 and WA2 are made of a material containing Au.
  • the first light receiving element 30P is electrically connected to the second lead frames 50A, 50C and 50D by wires WC1 to WC4, and the second light receiving element 30Q is electrically connected to the second lead frame by wires WB1 to WB3. It is electrically connected to lead frames 50A, 50B and 50D.
  • Wires WB1 to WB4 and WC1 to WC3 are bonding wires formed, for example, by a wire bonding apparatus (not shown), like wires WA1 and WA2.
  • the wires WB1 to WB4 and WC1 to WC3 are made of a conductive material (Au in this embodiment), like the wires WA1 and WA2.
  • Two wires WB1 connect the second semiconductor region of the second light receiving element 30Q and the die pad portion 52DB of the second lead frame 50D.
  • Two wires WB2 connect the second semiconductor region of the second light receiving element 30Q and the wire connecting portion 52CB of the second lead frame 50C.
  • Two wires WB3 connect the second semiconductor region of the second light receiving element 30Q and the wire connecting portion 51E of the relay frame 50E.
  • the two wires WB3 are connected to corresponding portions between the second lead frames 50B and 50C in the y-direction at the wire connecting portion 51E.
  • These wires WB1 to WB3 are connected to the outer periphery of the second semiconductor region of the second light receiving element 30Q when viewed from the z direction.
  • the two wires WB4 are connected to the end of the wire connection portion 51E that is closer to the second lead frame 50A in the y-direction, and the second resin side surface 82 of the second lead frame 50A from the narrow portion 52AA. It connects with the nearer part.
  • the second light receiving element 30Q is electrically connected to the second lead frame 50A via the wires WB3, WB4 and the relay frame 50E.
  • Two wires WC1 connect the second semiconductor region of the first light receiving element 30P and the die pad portion 52DB.
  • Two wires WC2 connect the second semiconductor region of the first light receiving element 30P and the wire connecting portion 52BB of the second lead frame 50B.
  • Two wires WC3 connect the second semiconductor region of the first light receiving element 30P and the narrow portion 52AA of the second lead frame 50A.
  • the cross-sectional structure of the die pad section 52DB, the configuration of the first light receiving element 30P, and the layout of the first light receiving element 30P on the die pad section 52DB will be described with reference to FIGS.
  • the configuration of the second light receiving element 30Q and the manner of arrangement of the second light receiving element 30Q in the die pad portion 52DB are the same as those of the first light receiving element 30P and the die pad portion 52DB, so detailed description thereof will be omitted.
  • the die pad portion 52DB has a first surface 52Ds and a second surface 52Dr facing opposite to each other in the thickness direction (z direction) of the die pad portion 52DB.
  • the first surface 52Ds is a surface forming a mounting surface on which the first light receiving element 30P and the second light receiving element 30Q are mounted. That is, in the present embodiment, the first surface 52Ds corresponds to the "mounting surface of the second die pad".
  • the first surface 52Ds faces the first surface 42Bs of the die pad portion 42BB in the z direction.
  • the first surface 52Ds faces the same side as the second surface 42Br of the die pad portion 42BB.
  • the second surface 52Dr faces the same side as the first surface 42Bs of the die pad portion 42BB.
  • the second surface 52Dr is arranged apart from the resin back surface 80r (see FIG. 5) in the z direction. That is, the second surface 52Dr is not exposed from the resin back surface 80r.
  • the die pad portion 52DB has a main metal layer 59DA and a plating layer 59DB formed on the outer surface of the main metal layer 59DA.
  • Main metal layer 59DA is made of a metal material containing Cu, for example.
  • the plated layer 59DB is made of a material containing Ni, Cr, or the like. As shown in FIG. 6, the plated layer 59DB is sufficiently thin compared to the main metal layer 59DA.
  • a recess 59DC recessed from the first surface 52Ds toward the second surface 52Dr is provided in a portion of the first surface 52Ds of the die pad portion 52DB.
  • the concave portion 59DC is provided closer to the first resin side surface 81 (see FIG. 2) than the center of the die pad portion 52DB in the x direction.
  • the recess 59DC extends in the y direction when viewed from the z direction.
  • the recess 59DC is a V-shaped groove.
  • the depth of the recess 59DC is deeper than the thickness of the plating layer 59DB.
  • the plating layer 59DB is also formed inside the recess 59DC.
  • the recess 59DC corresponds to the "second recess".
  • the shape of the recess 59DC can be changed arbitrarily.
  • the concave portion 59DC may have, for example, a rectangular shape, a semicircular shape, an arc shape, or the like when viewed from the y direction.
  • the recessed part 59DC should just be a shape recessed toward the 2nd surface 52Dr from 1st surface 52Ds.
  • the first light receiving element 30P is joined to the first surface 52Ds of the die pad portion 52DB with a conductive joining material 100P (see FIG. 6) such as solder or Ag paste.
  • a conductive joining material 100P such as solder or Ag paste.
  • the conductive bonding material 100P is interposed between the first surface 52Ds of the die pad portion 52DB and the element rear surface 30Pr of the first light receiving element 30P.
  • the conductive bonding material 100P corresponds to the "second bonding material".
  • the conductive bonding material 100P includes a first bonding region 101P interposed between the element rear surface 30Pr of the first light receiving element 30P and the first surface 52Ds of the die pad portion 52DB, and the conductive bonding material 100P protrudes from the first light receiving element 30P when viewed from the z direction. and a second bonding region 102P that is a region that is located on the outer surface of the first light receiving element 30P and is bonded to the outer surface of the first light receiving element 30P.
  • the first bonding region 101P enters the recessed portion 59DC of the die pad portion 52DB. That is, the first junction region 101P is interposed between the element rear surface 30Pr of the first light receiving element 30P and the first surface 52Ds of the die pad portion 52DB and enters the recess 59DC.
  • the second junction region 102P is provided so that the thickness of the second junction region 102P becomes thinner as the distance from the junction with the outer surface of the first light receiving element 30P increases from the first light receiving element 30P.
  • the second bonding region 102P is formed over the entire circumference of the first light receiving element 30P when viewed from the z direction.
  • the surface 102s of the second bonding region 102P is curved such that the center of curvature is located above the surface 102s, that is, the center of curvature is located on the opposite side of the surface 102s from the die pad portion 52DB in the z direction. ing.
  • a surface 102s of the second joint region 102P is formed by combining a plurality of curved surfaces. Each curved surface is formed such that the center of curvature thereof is located on the side opposite to the die pad portion 52DB with respect to the curved surface.
  • the curvature of the surface 102s of the second bonding region 102P adjacent to the first light receiving element 30P is greater than the curvature of the surface 102s of the second bonding region 102P farther from the first light receiving element 30P.
  • the height HT of the portion of the second junction region 102P in contact with the outer side surface of the first light receiving element 30P is 1/2 or less of the height H2 of the first light receiving element 30P. In this embodiment, the height HT is less than half the height H2.
  • the height HT is defined by the height from the first surface 52Ds of the die pad portion 52DB of the portion of the second junction region 102P in contact with the outer side surface of the first light receiving element 30P. That is, it can be said that the height HT is the thickness of the portion of the second junction region 102P that is in contact with the outer surface of the first light receiving element 30P.
  • the height H2 is defined by the distance in the z direction between the first surface 52Ds of the die pad portion 52DB and the element main surface 30Ps of the first light receiving element 30P.
  • the height HT is the height HT1 of the portion of the second bonding region 102P in contact with the outer side surface of the first light receiving element 30P near the first resin side surface 81 (see FIG. 5), and the height HT1 of the second bonding region 102P. and a height HT2 of the portion in contact with the outer side surface of the light receiving element 30P closer to the second resin side surface 82 (see FIG. 5). As shown in FIG. 8, height HT1 and height HT2 are different. In this embodiment, the height HT2 is higher than the height HT1.
  • the height HT2 of the second bonding region 102P closer to the second resin side surface 82 which has a smaller portion protruding in the x direction from the first light receiving element 30P in the die pad portion 52DB when viewed from the z direction, is The portion protruding in the x-direction from the light receiving element 30P is higher than the height HT1 of the second bonding region 102P near the first resin side surface 81 .
  • the first light-receiving element 30P is arranged near the end portion closer to the second resin side surface 82 (see FIG. 5) among both end portions in the x direction of the die pad portion 52DB. Therefore, the portion of the die pad portion 52DB protruding from the first light receiving element 30P toward the second resin side surface 82 is larger than the portion of the die pad portion 52DB protruding from the first light receiving element 30P toward the first resin side surface 81. is also formed short in the x-direction.
  • the length in the x direction of the portion of the die pad portion 52DB protruding from the first light receiving element 30P toward the second resin side surface 82 is the first element arrangement of the first light receiving element 30P and the die pad portion 52DB when viewed from the z direction. It is defined by the distance in the x direction from the side surface of the portion 53D that is closer to the second resin side surface 82 out of both side surfaces in the x direction.
  • the length in the x direction of the portion of the die pad portion 52DB protruding from the first light receiving element 30P toward the first resin side surface 81 is the first element arrangement of the first light receiving element 30P and the die pad portion 52DB when viewed from the z direction. It is defined by the distance in the x direction from the side surface of the portion 53D that is closer to the first resin side surface 81 out of both side surfaces in the x direction.
  • the first light receiving element 30P is arranged so as to overlap with the recessed portion 59DC of the die pad portion 52DB when viewed from the z direction.
  • the concave portion 59DC is arranged closer to the first resin side surface 81 than the center of the first light receiving element 30P in the x direction.
  • the first light receiving element 30P is arranged biased in the x direction toward the second resin side surface 82 with respect to the concave portion 59DC.
  • the thickness of the first light emitting element 20P (dimension in the z direction of the first light emitting element 20P) is greater than the thickness of the first light receiving element 30P (dimension in the z direction of the first light receiving element 30P). too thin.
  • the thickness of the first light emitting element 20P is 80% or more and 90% or less of the thickness of the first light receiving element 30P.
  • the thickness of the first light emitting element 20P is defined by the distance between the element main surface 20Ps and the element rear surface 20Pr in the thickness direction of the first light emitting element 20P.
  • the thickness of the first light receiving element 30P is defined by the distance between the element main surface 30Ps and the element back surface 30Pr in the thickness direction of the first light receiving element 30P.
  • the relationship between the thickness of the first light emitting element 20P and the thickness of the first light receiving element 30P can be arbitrarily changed.
  • the thickness of the first light emitting element 20P is greater than 90% and less than 100% of the thickness of the first light receiving element 30P.
  • the thickness of the first light emitting element 20P may be 70% or more and less than 80% of the thickness of the first light receiving element 30P.
  • the thickness of the first light emitting element 20P may be 60% or more and less than 70% of the thickness of the first light receiving element 30P.
  • the thickness of the first light emitting element 20P may be 50% or more and less than 60% of the thickness of the first light receiving element 30P.
  • the die pad portion 52DB and the die pad portion 42BB are arranged at positions overlapping each other when viewed from the z direction.
  • the die pad portion 42BB is arranged closer to the resin main surface 80s (see FIG. 5) with a gap from the die pad portion 52DB in the z direction.
  • the die pad portion 52DB is arranged closer to the resin back surface 80r (see FIG. 5) with a gap from the die pad portion 42BB in the z direction.
  • the x-direction end of the die pad portion 42BB that is closer to the first resin side surface 81 and the x-direction end of the die pad portion 52DB that is closer to the first resin side surface 81 are aligned in the z-direction.
  • the die pad portion 42BB and the die pad portion 52DB are arranged in the x direction so as to overlap each other when viewed from above.
  • the die pad portion 52DB since the die pad portion 52DB is formed longer than the die pad portion 42BB in the x direction, the die pad portion 52DB has a portion protruding toward the second resin side surface 82 from the die pad portion 42BB when viewed from the z direction. doing.
  • the die pad portions 42BB and 52DB are arranged at positions where the concave portion 46B of the die pad portion 42BB and the concave portion 59DC of the die pad portion 52DB overlap each other when viewed from the z direction.
  • the die pad portion 42BB and the die pad portion 52DB are arranged such that the recess 46B and the recess 59DC face each other in the z direction.
  • the first light emitting element 20P is arranged at a position overlapping the first light receiving element 30P when viewed from the z direction.
  • the first light emitting element 20P is arranged to be biased toward the first resin side surface 81 with respect to the first light receiving element 30P in the x direction.
  • the first light emitting element 20P is arranged at a position that overlaps with the end portion of the first light receiving element 30P closer to the first resin side surface 81 among the both end portions of the first light receiving element 30P in the x direction when viewed from the z direction. .
  • the position of the side surface closer to the first resin side surface 81 among both side surfaces of the first light emitting element 20P in the x direction The first light-emitting element 20P and the first light-receiving element 30P are arranged so that the positions of the side surfaces closer to the first resin side surface 81 are aligned with each other.
  • the light receiving surface 33P of the first light receiving element 30P is formed closer to the first resin side surface 81 in the element main surface 30Ps. Therefore, it can be said that the first light emitting element 20P is arranged in the x-direction so as to be biased toward the first semiconductor region with respect to the first light receiving element 30P.
  • the element main surface 20Ps which is the light emitting surface of the first light emitting element 20P
  • the light receiving surface 33P of the first light receiving element 30P are arranged to face each other in the z direction. Therefore, it can be said that the light receiving surface 33P faces the element main surface 20Ps (light emitting surface) with a gap therebetween.
  • the insulation module 10 includes a first transparent resin 60P, a second transparent resin 60Q, a first plate member 70P, and a second plate member 70Q.
  • Transparent epoxy resin, acrylic resin, silicone resin, or the like, for example, is used for each of the transparent resins 60P and 60Q.
  • the first transparent resin 60P is made of an insulating resin through which light (light of the first wavelength) from the first light emitting element 20P can pass.
  • the resin material of the first transparent resin 60P is formed of an insulating resin that blocks (does not transmit) light from the second light emitting element 20Q.
  • the second transparent resin 60Q is made of an insulating resin through which light (light of the second wavelength) from the second light emitting element 20Q can pass.
  • the resin material of the second transparent resin 60Q is made of an insulating resin that blocks (does not transmit) the light from the first light emitting element 20P.
  • Each transparent resin 60P, 60Q is formed by potting, for example.
  • the first transparent resin 60P is provided at least between the element main surface 20Ps of the first light emitting element 20P and the light receiving surface 33P of the first light receiving element 30P.
  • the first transparent resin 60P covers the first light emitting element 20P and the first light receiving element 30P.
  • the first transparent resin 60P covers at least the element main surface 20Ps of the first light emitting element 20P and the light receiving surface 33P of the first light receiving element 30P.
  • At least part of the second transparent resin 60Q is provided between the element main surface 20Qs of the second light emitting element 20Q and the light receiving surface 33Q of the second light receiving element 30Q.
  • the second transparent resin 60Q covers the second light emitting element 20Q and the second light receiving element 30Q.
  • the second transparent resin 60Q covers at least the element main surface 20Qs of the second light emitting element 20Q and the light receiving surface 33Q of the second light receiving element 30Q.
  • the first transparent resin 60P and the second transparent resin 60Q are aligned in the x direction and arranged apart from each other in the y direction.
  • Each plate member 70P, 70Q is made of a material having translucency and insulation.
  • the first plate member 70P allows optical communication between the first light emitting element 20P and the first light receiving element 30P, while insulating the first light emitting element 20P and the first light receiving element 30P.
  • the second plate member 70Q allows optical communication between the second light emitting element 20Q and the second light receiving element 30Q, while insulating the second light emitting element 20Q and the second light receiving element 30Q.
  • the first plate member 70P is provided on the first transparent resin 60P, and the second plate member 70Q is provided on the second transparent resin 60Q. As shown in FIG. 6, the first plate member 70P is provided so as to penetrate the first transparent resin 60P. Although not shown, the second plate-like member 70Q is also provided so as to penetrate the second transparent resin 60Q.
  • the first plate member 70P and the second plate member 70Q are aligned in the x direction and spaced apart from each other in the y direction.
  • the light transmittance of the first plate member 70P is lower than the light transmittance of the first transparent resin 60P.
  • the first plate-like member 70P is made of a material whose light transmittance is lower than that of the first transparent resin 60P.
  • the light transmittance of the first plate member 70P can be changed arbitrarily.
  • the light transmittance of the first plate member 70P may be equal to the light transmittance of the first transparent resin 60P, or may be higher than the light transmittance of the first transparent resin 60P. In other words, the light transmittance of the first transparent resin 60P may be lower than the light transmittance of the first plate member 70P.
  • the first plate member 70P is made of an insulating resin through which the light (light of the first wavelength) from the first light emitting element 20P can pass.
  • the first plate member 70P may be made of an insulating resin that blocks (does not transmit) the light from the second light emitting element 20Q.
  • the second plate member 70Q is made of an insulating resin through which light (light of the second wavelength) from the second light emitting element 20Q can pass.
  • the second plate member 70Q may be made of an insulating resin that blocks (does not transmit) the light from the first light emitting element 20P.
  • each of the transparent resins 60P and 60Q may be made of a resin material that can transmit both the light of the first wavelength and the light of the second wavelength.
  • the sealing resin 80 covers the first transparent resin 60P and the second transparent resin 60Q, and the first plate member 70P and the second plate member 70Q. That is, the sealing resin 80 covers the first light emitting element 20P, the first light receiving element 30P, and the first plate member 70P together with the first transparent resin 60P. The sealing resin 80 covers the second light emitting element 20Q, the second light receiving element 30Q, and the second plate member 70Q together with the second transparent resin 60Q.
  • the sealing resin 80 is interposed both in the y direction between the first transparent resin 60P and the second transparent resin 60Q and between the first plate member 70P and the second plate member 70Q in the y direction. It has a separation wall portion 89 .
  • the separation wall portion 89 is provided at a position overlapping with the through hole 55D and the recessed portion 56D (see FIG. 4 for both) of the die pad portion 52DB of the second lead frame 50D when viewed from the z direction.
  • the first plate member 70P and the second plate member 70Q have the same shape.
  • the arrangement of the first plate member 70P with respect to the first light emitting element 20P and the first light receiving element 30P is the same as the arrangement of the second plate member 70Q with respect to the second light emitting element 20Q and the second light receiving element 30Q. Therefore, the first plate member 70P will be described in detail below, and the detailed description of the second plate member 70Q will be omitted.
  • the first plate member 70P is arranged so as to be interposed between the first light emitting element 20P and the first light receiving element 30P. It can also be said that the first plate member 70P is provided between the element main surface 20Ps (light emitting surface) of the first light emitting element 20P and the light receiving surface 33P of the first light receiving element 30P.
  • the first plate member 70P has a first end 71P and a second end 72P as both ends in the x direction.
  • the first end portion 71P is the end portion closer to the first resin side surface 81 of both ends of the first plate member 70P in the x direction
  • the second end portion 72P is the end portion of the first plate member 70P in the x direction. It is the end portion closer to the second resin side surface 82 of the both end portions.
  • the first plate member 70P protrudes from the die pad portions 42BB and 52DB in the x-direction. That is, when viewed from the z-direction, the first end 71P of the first plate member 70P is provided closer to the first resin side surface 81 than the die pad portions 42BB and 52DB, and the second end 72P is located closer to the die pad portions 42BB and 52DB. It is provided closer to the second resin side surface 82 than 52DB.
  • the first end portion 71P is positioned between the die pad portion 42BB and the die pad portion 52DB in the z direction.
  • the first end portion 71P is positioned closer to the die pad portion 52DB than the center in the z direction between the die pad portion 42BB and the die pad portion 52DB.
  • the first end portion 71P is arranged at a position overlapping the first light receiving element 30P when viewed from the x direction.
  • the second end portion 72P is arranged closer to the resin main surface 80s than the first surface 42Bs of the die pad portion 42BB and closer to the resin back surface 80r than the second surface 42Br in the z-direction. That is, the second end portion 72P is arranged at a position overlapping the die pad portion 42BB when viewed in the x direction.
  • the first plate member 70P extends obliquely with respect to both the element main surface 20Ps of the first light emitting element 20P and the light receiving surface 33P of the first light receiving element 30P. Specifically, the first end 71P of the first plate member 70P is arranged closest to the resin back surface 80r in the z direction, and the second end 72P is the first end in the z direction. The plate member 70P is arranged closest to the resin main surface 80s. That is, the first plate member 70P is inclined from the resin back surface 80r toward the resin main surface 80s as it goes from the first end 71P to the second end 72P.
  • the distance between the element main surface 20Ps of the first light emitting element 20P and the first plate-like member 70P in the z direction is from the first end 71P to the second end 72P (both are ) becomes smaller.
  • the distance between the element main surface 20Ps of the first light emitting element 20P and the first plate-like member 70P in the z-direction becomes smaller from the first resin side surface 81 toward the second resin side surface 82 .
  • the distance D1 is the maximum distance between the element main surface 20Ps of the first light emitting element 20P and the first plate member 70P in the z direction. It can also be said that the distance D1 is the maximum distance among the distances between the first electrode 21P and the first plate member 70P facing the first electrode 21P.
  • the distance between the second end portion closer to the second resin side surface 82 and the first plate-like member 70P corresponding to the second end portion in the z direction, out of both end portions in the x direction of the element main surface 20Ps D2 is the minimum distance in the z direction between the element main surface 20Ps of the first light emitting element 20P and the first plate member 70P.
  • the distance between the element main surface 30Ps of the first light receiving element 30P and the first plate member 70P in the z direction increases from the first end 71P toward the second end 72P.
  • the distance between the element main surface 30Ps of the first light receiving element 30P and the first plate-like member 70P in the z direction increases from the first resin side surface 81 toward the second resin side surface 82 .
  • the distance D3 between the end portion of the element main surface 30Ps that is closer to the first resin side surface 81 in the x direction and the first plate member 70P corresponding to the end portion in the z direction is This is the minimum distance among the distances in the z direction between the element main surface 30Ps of the first light receiving element 30P and the first plate member 70P.
  • the distance D4 between the end portion of the element main surface 30Ps that is closer to the second resin side surface 82 in the x direction and the first plate member 70P that corresponds to the end portion in the z direction is This is the maximum distance among the distances in the z direction between the element main surface 30Ps of the first light receiving element 30P and the first plate member 70P.
  • the distance D1 is greater than the distance D3.
  • Distance D2 is greater than distance D3.
  • Distance D4 is greater than distance D2.
  • Distance D4 is greater than distance D1.
  • the distance D4 is greater than the distance DG between the first light emitting element 20P and the first light receiving element 30P in the z direction.
  • the distance D1 is smaller than the thickness of the first light emitting element 20P.
  • the distance D1 is smaller than the thickness of the first light receiving element 30P.
  • the distance D1 is 1/2 or more of the distance DG.
  • the minimum distance among the distances between the first electrode 21P and the first plate member 70P facing the first electrode 21P is smaller than 1/2 of the distance DG.
  • the minimum distance among the distances between the first electrode 21P and the first plate-shaped member 70P facing the first electrode 21P is the second resin side surface of both ends of the first electrode 21P in the x direction. It is defined by the distance in the z-direction between the end closer to 82 and the portion of the first plate member 70P that overlaps the end in the z-direction.
  • the element main surface 30Ps of the element main surface 30Ps of the first light receiving element 30P at a position P1 facing the first end of the element main surface 20Ps of the first light emitting element 20P in the z direction and the first plate member 70P in the z-direction is less than half the distance DG.
  • Distance D5 is less than 1 ⁇ 3 of distance DG. In the illustrated example, the distance D5 is about 1/6 of the distance DG.
  • the distance D2 is less than half the distance DG.
  • Distance D2 is less than 1 ⁇ 3 of distance DG. In the illustrated example, the distance D2 is about 1/6 of the distance DG.
  • the element principal surface 30Ps of the element principal surface 30Ps of the first light receiving element 30P at a position P2 facing the second end of the element principal surface 20Ps of the first light emitting element 20P in the z direction and the first plate member 70P is about half the distance DG. Also, the distance D1 is about half the distance DG.
  • the distance DG is smaller than the thickness of the first light receiving element 30P.
  • the distance DG is 90% or less of the thickness of the first light receiving element 30P.
  • the distance DG may be 80% or less of the thickness of the first light receiving element 30P.
  • the distance DG may be 70% or less of the thickness of the first light receiving element 30P. In one example, the distance DG is approximately 65% of the thickness of the first light receiving element 30P.
  • the distance DG is smaller than the thickness of the first light emitting element 20P.
  • the distance DG is 90% or less of the thickness of the first light emitting element 20P. In one example, the distance DG is approximately 80% of the thickness of the first light emitting element 20P.
  • the first transparent resin 60P is composed of a light emitting side transparent resin 60PA that covers the first light emitting element 20P with the first plate-like member 70P and a light receiving side transparent resin 60PB that covers the first light receiving element 30P. are divided.
  • the light emitting side transparent resin 60PA is provided between the first plate member 70P and the first light emitting element 20P.
  • the light emitting side transparent resin 60PA covers at least the entire element main surface 20Ps of the first light emitting element 20P.
  • the light-emitting side transparent resin 60PA covers a portion of the die pad portion 42BB closer to the second resin side surface 82 (see FIG. 5) than the first light emitting element 20P.
  • the die pad portion 42BB includes a first extending portion 47BA extending toward the first resin side surface 81 (see FIG. 5) from the first light emitting element 20P and a second resin side surface extending from the first light emitting element 20P. and a second extending portion 47BB extending toward 82 .
  • the second bonding region 92P of the conductive bonding material 90P includes a first portion 92PA provided on the first extending portion 47BA and a second extending portion 47BB. and a second portion 92PB provided in the .
  • the light emitting side transparent resin 60PA is in contact with both the second extending portion 47BB and the second portion 92PB.
  • the light emitting side transparent resin 60PA is filled between the second extending portion 47BB and the second portion 92PB and the first plate member 70P in the z direction.
  • the light-emitting side transparent resin 60PA is provided closer to the second resin side surface 82 than the second extending portion 47BB.
  • the light emitting side transparent resin 60PA is formed so as to spread in the x direction from the die pad portion 42BB toward the first plate member 70P. More specifically, the light emitting side transparent resin 60PA is in contact with the tapered portion near the element main surface 20Ps of the first light emitting element 20P, and the first resin side surface increases from the tapered portion toward the first plate member 70P. It is provided so as to incline toward 81 .
  • the light-emitting side transparent resin 60PA is in contact with a portion of the x-direction side surface of the second extension portion 47BB that is close to the first surface 42Bs. It is provided so as to incline toward the second resin side surface 82 as it goes toward.
  • curved surfaces 61A and 62A are formed at both ends of the light emitting side transparent resin 60PA in the x direction in the cross-sectional structure of the light emitting side transparent resin 60PA cut along the xz plane.
  • the curved surfaces 61A and 62A correspond to "side surfaces of the light emitting side transparent resin”.
  • the curved surface 61A is curved such that the center of curvature CA is located above the curved surface 61A, that is, the center of curvature CA is located closer to the die pad portion 42BB with respect to the curved surface 61A in the z direction.
  • the curved surface 61A is curved such that the center of curvature CA is located on the opposite side of the curved surface 61A from the first plate member 70P.
  • the end portion closer to the first resin side surface 81 is closer to the first resin side surface 81 of the x-direction end portions of the die pad portion 42BB in the x direction.
  • the end closer to the first resin side surface 81 is located closer to the first resin side surface 81 in the x direction than the second bonding region 92P of the conductive bonding material 90P.
  • the end portion closer to the first resin side surface 81 is provided closer to the first light receiving element 30P than the wire WA1 in the z-direction.
  • the curved surface 62A is curved such that the center of curvature CB is located above the curved surface 62A, that is, the center of curvature CB is located closer to the resin main surface 80s (see FIG. 5) than the curved surface 62A in the z direction. formed.
  • the curved surface 62A is curved such that the center of curvature CB is located on the opposite side of the curved surface 62A from the first plate member 70P.
  • the light-emitting side transparent resin 60PA is formed on the side surface near the first extending portion 47BA among both side surfaces in the x direction of the first light emitting element 20P, the first portion 92PA of the second bonding region 92P in the conductive bonding material 90P, and the first portion 92PA. 1 extending portion 47BA is not covered. That is, of the x-direction side surfaces of the first light emitting element 20P, the side surface near the first extending portion 47BA, the first portion 92PA of the second bonding region 92P in the conductive bonding material 90P, and the first extending portion 47BA are covered with a sealing resin 80 .
  • the light receiving side transparent resin 60PB is provided between the first plate member 70P and the first light receiving element 30P.
  • the light receiving side transparent resin 60PB covers at least the entire element main surface 30Ps of the first light receiving element 30P.
  • the light-receiving-side transparent resin 60PB covers both side surfaces of the first light-receiving element 30P in the x direction and part of the conductive bonding material 100P.
  • part of the conductive bonding material 100P is a region bonded to the side surface of the first light receiving element 30P near the first resin side surface 81 in the x direction in the second bonding region 102P of the conductive bonding material 100P. .
  • the light-receiving side transparent resin 60PB is not in contact with the remainder of the conductive bonding material 100P and the die pad portion 52DB. That is, the rest of the conductive bonding material 100P and the die pad portion 52DB are covered with the sealing resin 80. As shown in FIG.
  • the light-receiving side transparent resin 60PB When viewed from the z-direction, the light-receiving side transparent resin 60PB is provided closer to the second resin side surface 82 than the die pad portion 52DB. In this embodiment, the light receiving side transparent resin 60PB is provided so as to protrude closer to the second resin side surface 82 than the light emitting side transparent resin 60PA in the x direction when viewed from the z direction.
  • the light-receiving side transparent resin 60PB is formed so as to spread in the x direction from the die pad portion 52DB toward the first plate member 70P. More specifically, the light-receiving side transparent resin 60PB is in contact with both side surfaces in the x direction of the first light receiving element 30P, and is provided so as to spread in the x direction from both side surfaces toward the first plate member 70P. .
  • curved surfaces 61B and 62B are formed at both ends of the light-receiving-side transparent resin 60PB in the x-direction in the cross-sectional structure of the light-receiving-side transparent resin 60PB cut along the xz plane.
  • the curved surfaces 61B and 62B correspond to "side surfaces of the transparent resin on the light receiving side".
  • the curved surface 61B is formed in a curved shape so that the center of curvature CC thereof is located below the curved surface 61B, that is, the center of curvature CC is located closer to the die pad portion 52DB than the curved surface 61B in the z direction. It can be said that the curved surface 61B is curved such that the center of curvature CC is located on the opposite side of the curved surface 61B from the first plate member 70P. Of the x-direction end portions of the curved surface 61B, the end portion closer to the first resin side surface 81 is located closer to the first resin side surface 81 than the second bonding region 102P of the conductive bonding material 100P in the x direction.
  • the curved surface 62B is formed in a curved shape so that the center of curvature CD is located below the curved surface 62B, that is, the center of curvature CD is located closer to the resin back surface 80r (see FIG. 5) than the curved surface 62B in the z direction. It is The curved surface 62B is curved such that the center of curvature CD is located on the opposite side of the curved surface 62B from the first plate member 70P.
  • the second transparent resin 60Q has a light-emitting side transparent resin 60QA and a light-receiving side transparent resin 60QB separated by a second plate member 70Q.
  • the light emitting side transparent resin 60QA has the same shape as the light emitting side transparent resin 60PA
  • the light receiving side transparent resin 60QB has the same shape as the light receiving side transparent resin 60PB.
  • the first electrode 21P of the element main surface 20Ps of the first light emitting element 20P to which the wire WA1 is connected is biased with respect to the center of the element main surface 20Ps of the first light emitting element 20P in the x direction. position. More specifically, the first electrode 21P is arranged in the x direction at a portion of the element main surface 20Ps of the first light emitting element 20P, where the distance from the first plate member 70P is larger than at the center. ing. In the present embodiment, the first electrode 21P is arranged biased toward the first resin side surface 81 (see FIG. 5) with respect to the center of the element main surface 20Ps of the first light emitting element 20P in the x direction. Specifically, the first electrode 21P is arranged at the end portion closer to the first resin side surface 81 among both end portions in the x direction of the element main surface 20Ps. Here, in this embodiment, the first electrode 21P corresponds to a "pad".
  • the first electrode 21P is provided at a position that overlaps a position deviated from the center in the x direction on the light receiving surface 33P of the first light receiving element 30P when viewed in the z direction. More specifically, the first electrode 21P is a portion of the light-receiving surface 33P where the distance between the element main surface 20Ps and the first plate member 70P is larger than that in the center in the x-direction when viewed from the z-direction. They are arranged in a biased position where they overlap. Specifically, the first electrode 21P is arranged at a position overlapping with the end portion closer to the first resin side surface 81 of both end portions of the light receiving surface 33P in the x direction when viewed from the z direction.
  • connection portion WAX of the wire WA1 that is connected to the first electrode 21P of the first light emitting element 20P is provided at a position offset from the center of the element main surface 20Ps of the first light emitting element 20P in the x direction. More specifically, the connection portion WAX is arranged biased in a portion of the element main surface 20Ps of the first light emitting element 20P where the distance between it and the first plate member 70P is larger than that in the center in the x direction. there is In the present embodiment, the connection portion WAX is arranged to be biased toward the first resin side surface 81 with respect to the center of the element main surface 20Ps of the first light emitting element 20P in the x direction. Specifically, the connection portion WAX is arranged at the end portion closer to the first resin side surface 81 among both end portions of the element main surface 20Ps in the x direction. The connecting portion WAX is covered with the light emitting side transparent resin 60PA.
  • connection portion WAX is provided at a position that overlaps with the position of the light-receiving surface 33P of the first light-receiving element 30P deviated from the center in the x-direction when viewed from the z-direction. More specifically, when viewed from the z direction, the connection portion WAX overlaps with the portion where the distance between the element main surface 20Ps and the first plate member 70P with respect to the center of the light receiving surface 33P in the x direction increases. are arranged biased towards. Specifically, the connection portion WAX is arranged at a position overlapping with the end portion closer to the first resin side surface 81 of both end portions of the light receiving surface 33P in the x direction when viewed from the z direction.
  • the wire WA1 extends from the connection portion WAX toward the first resin side surface 81. As shown in FIG. In other words, the wire WA1 extends from the connection portion WAX toward the space where the distance between the element main surface 20Ps and the first plate member 70P increases. Therefore, when viewed from the z-direction, the wire WA1 overlaps only the end closer to the first resin side surface 81 among both ends of the light-receiving surface 33P in the x-direction.
  • FIG. 11 is a plan view of the first light emitting element 20P and the second light emitting element 20Q viewed from the z direction.
  • the first transparent resin 60P and the second transparent resin 60Q are omitted.
  • connection portions WAX of the two wires WA1 are aligned with each other in the x direction and spaced apart from each other in the y direction.
  • the two wires WA1 respectively extend away from each other from the connection portion WAX toward the wire connection portion 42AB.
  • connection portion WAY of the two wires WA2 has a larger distance from the first plate-like member 70P than the center in the x direction of the element main surface 20Qs (see FIG. 9) of the second light emitting element 20Q. It is set biased to the part.
  • the connecting portions WAY of the two wires WA2 are aligned with each other in the x direction and are spaced apart from each other in the y direction.
  • the two wires WA2 respectively extend away from each other from the connection portion WAY toward the wire connection portion 42DB.
  • FIG. 12 is a cross-sectional view schematically showing the cross-sectional structure of the element main surface 30Ps of the first light receiving element 30P and its periphery. Since the configuration of the second light receiving element 30Q is the same as that of the first light receiving element 30P, detailed description thereof will be omitted.
  • the first light receiving element 30P includes a semiconductor substrate 34P, an insulating wiring layer 35PC formed on the surface 34Ps of the semiconductor substrate 34P, and an insulating layer 36P laminated on the insulating wiring layer 35PC. I have.
  • the semiconductor substrate 34P constitutes the element rear surface 30Pr (see FIG. 8) of the first light receiving element 30P. That is, the back surface (not shown) of the semiconductor substrate 34P facing the opposite side to the front surface 34Ps constitutes the element back surface 30Pr.
  • a substrate formed of a material containing Si (silicon), for example, is used as the semiconductor substrate 34P.
  • a photoelectric conversion element 35PA is provided in the first semiconductor region 34PA of the semiconductor substrate 34P.
  • a control circuit 35PB is provided in the second semiconductor region 34PB of the semiconductor substrate 34P. Control circuit 35PB is a circuit that receives a signal from photoelectric conversion element 35PA, for example.
  • the insulating wiring layer 35PC includes wiring that electrically connects the photoelectric conversion element 35PA and the control circuit 35PB.
  • the insulating wiring layer 35PC is formed so as to overlap both the photoelectric conversion element 35PA and the control circuit 35PB when viewed from the z direction.
  • the insulating layer 36P is laminated on the photoelectric conversion element 35PA and the control circuit 35PB. That is, the insulating layer 36P is provided over both the first semiconductor region 34PA and the second semiconductor region 34PB of the semiconductor substrate 34P. In this embodiment, the insulating layer 36P is formed over the entire insulating wiring layer 35PC.
  • the insulating layer 36P includes a first insulating portion 36PA formed on the photoelectric conversion element 35PA and a second insulating portion 36PB formed on the control circuit 35PB. It can also be said that the first insulating portion 36PA is a portion corresponding to the first semiconductor region 34PA, and the second insulating portion 36PB is a portion corresponding to the second semiconductor region 34PB.
  • a surface 36Ps of the insulating layer 36P forms an element main surface 30Ps. A portion of the surface 36Ps of the insulating layer 36P that corresponds to the first insulating portion 36PA constitutes a light receiving surface 33P.
  • the insulating layer 36P includes a plurality of insulating films 37PA to 37PE stacked together in the z direction, a plurality of wiring layers 38PA to 38PE provided in the insulating films 37PA to 37PE, and vias connecting these wiring layers 38PA to 38PE. 39PA to 39PD.
  • the plurality of wiring layers 38PA-38PE and vias 39PA-39PD are provided in the second insulating portion 36PB.
  • the plurality of wiring layers 38PA-38PE and vias 39PA-39PD are not provided in the first insulating portion 36PA.
  • the plurality of wiring layers 38PA to 38PE provided in the second insulating portion 36PB correspond to the "first wiring layer".
  • each insulating film 37PA to 37PE is an interlayer insulating film, and is formed of silicon oxide (SiO 2 ), for example.
  • the plurality of wiring layers 38PA to 38PE are layers in which wirings connected to the control circuit 35PB are mainly formed, and are provided in the second insulating portion 36PB of the insulating layer 36P.
  • the wiring layers 38PA to 38PE are not provided in the first insulating portion 36PA of the insulating layer 36P.
  • the wiring layers 38PA to 38PE are arranged so as to overlap each other when viewed from the z direction.
  • Each wiring layer 38PA to 38PE is made of a metal material such as Al, Ti (titanium).
  • the wiring layer 38PA is embedded in the insulating film 37PA.
  • Wiring layer 38PA is electrically connected to, for example, semiconductor substrate 34P.
  • the wiring layer 38PB is embedded in the insulating film 37PB.
  • the wiring layer 38PA and the wiring layer 38PB are connected by a plurality of vias 39PA. Each via 39PA is embedded in the insulating film 37PA and extends in the z direction.
  • the wiring layer 38PC is embedded in the insulating film 37PC.
  • the wiring layer 38PB and the wiring layer 38PC are connected by a plurality of vias 39PB.
  • Each via 39PB is embedded in the insulating film 37PB and extends in the z direction.
  • the wiring layer 38PD is embedded in the insulating film 37PD.
  • the wiring layer 38PC and the wiring layer 38PD are connected by a plurality of vias 39PC.
  • Each via 39PC is embedded in the insulating film 37PC and extends in the z direction.
  • the wiring layer 38PE is embedded in the insulating film 37PE.
  • the wiring layer 38PD and the wiring layer 38PE are connected by a plurality of vias 39PD.
  • Each via 39PD is embedded in the insulating film 37PD and extends in the z direction.
  • the plurality of wiring layers 38PA-38PE are provided corresponding to the plurality of insulating films 37PA-37PE, but the present invention is not limited to this.
  • the second insulating portion 36PB may have an insulating film on which no wiring layer is provided.
  • FIG. 13 is a plan view of the insulation module 10 showing the terminals 41A to 41D and part of the sealing resin 80
  • FIG. 14 is a plan view of the insulation module 10 showing the terminals 51A to 51D and part of the sealing resin 80. It is a diagram.
  • a concave-convex portion 87 is provided on a first resin side surface 81 of the sealing resin 80 between terminals adjacent in the y direction among the plurality of terminals 41A to 41D. .
  • the uneven portion 87 is formed between the first resin side surface 81 between the terminals 41A and 41B in the y direction and the first resin side surface 81 between the terminals 41B and 41C in the y direction. and a portion of the first resin side surface 81 between the terminal 41C and the terminal 41D in the y direction.
  • the uneven portion 87 is formed over the entire first resin side surface 81 in the z direction.
  • Each concave-convex portion 87 is composed of a first resin side surface 81 and a concave portion 87 a recessed from the first resin side surface 81 .
  • Each concave-convex portion 87 has, for example, a plurality of (three in this embodiment) concave portions 87a.
  • Each recess 87a is provided so as to penetrate the sealing resin 80 in the z direction.
  • the bottom surface of each recess 87a is formed parallel to the first side surface 85 and the second side surface 86 of the first resin side surface 81 (see FIG. 5 for both). That is, the portion of the bottom surface of each recess 87a that corresponds to the first side surface 85 inclines toward the outside of the sealing resin 80 in the x direction from the resin main surface 80s toward the resin rear surface 80r (see FIG. 5 for both). It extends like A portion of the bottom surface of each recess 87a corresponding to the second side surface 86 extends so as to be inclined outward from the sealing resin 80 in the x-direction from the resin back surface 80r toward the resin main surface 80s.
  • a concave-convex portion 88 is provided on the second resin side surface 82 of the sealing resin 80 between the terminals adjacent in the y direction among the plurality of terminals 51A to 51D. .
  • the uneven portion 88 is formed between the second resin side surface 82 between the terminals 51A and 51B in the y direction and the second resin side surface 82 between the terminals 51B and 51C in the y direction. and a portion of the second resin side surface 82 between the terminal 51C and the terminal 51D in the y direction.
  • the concave-convex portion 88 includes a portion of the second resin side surface 82 between the terminal 51A and the suspension lead 58D in the y direction, a portion between the suspension lead 58D and the terminal 51B in the y direction, and a portion between the terminal 58D and the terminal 51B.
  • Each uneven portion 88 is formed over the entire second resin side surface 82 in the z direction.
  • Each uneven portion 88 is composed of a second resin side surface 82 and a recessed portion 88 a recessed from the second resin side surface 82 .
  • Each concave-convex portion 88 has, for example, a plurality of (three in this embodiment) concave portions 88a.
  • Each concave portion 88a is provided so as to penetrate the sealing resin 80 in the z direction.
  • the bottom surface of each concave portion 88a is formed so as to be parallel to the first side surface 85 and the second side surface 86 of the first resin side surface 81 (see FIG. 1 for both).
  • each concave portion 88a that corresponds to the first side surface 85 inclines toward the outside of the sealing resin 80 in the x direction from the resin main surface 80s toward the resin rear surface 80r (both see FIG. 5). It extends like A portion of the bottom surface of each recess 88a corresponding to the second side surface 86 extends so as to be inclined outward from the sealing resin 80 in the x-direction from the resin rear surface 80r toward the resin main surface 80s.
  • the bottom surfaces of the recesses 87a and 88a may be formed so as to extend along the z direction. Further, the number of concave portions 87a, 88a of each uneven portion 87, 88 can be changed arbitrarily. Each uneven portion 87, 88 may have at least one recessed portion 87a, 88a. Further, the concave-convex portion 87 may have a convex portion that protrudes from the first resin side surface 81 instead of the concave portion 87a. The concave-convex portion 88 may have a convex portion that protrudes from the second resin side surface 82 instead of the concave portion 88a.
  • the uneven portion 87 includes a portion of the first resin side surface 81 between the terminals 41A and 41B in the y direction, a portion of the first resin side surface 81 between the terminals 41B and 41C in the y direction, and a portion of the first resin side surface 81 between the terminals 41B and 41C in the y direction. It suffices if it is provided on at least one portion of the one resin side surface 81 between the terminal 41C and the terminal 41D in the y direction.
  • the uneven portion 88 includes a portion of the second resin side surface 82 between the terminals 51A and 51B in the y direction, a portion of the second resin side surface 82 between the terminals 51B and 51C in the y direction, and a portion of the second resin side surface 82 between the terminals 51B and 51C. It suffices if it is provided on at least one of the two resin side surfaces 82 between the terminal 51C and the terminal 51D in the y direction.
  • the concave-convex portion 88 includes a portion of the second resin side surface 82 between the terminal 51A and the suspension lead 58D in the y direction, a portion between the suspension lead 58D and the terminal 51B in the y direction, and a portion between the terminal 58D and the terminal 51B.
  • the method of manufacturing the insulating module 10 includes, for example, a first lead frame preparation process, a light emitting element mounting process, a first wire forming process, a second lead frame preparing process, a light receiving element mounting process, a second wire forming process, and a light receiving side transparent resin forming process.
  • first lead frame preparation process a first frame including first lead frames 40A to 40D is prepared. Subsequently, by bending the first frame, portions corresponding to the inner leads 42A to 42D of the first lead frames 40A to 40D are bent.
  • the first light emitting element 20P is die-bonded to the die pad portion 42BB of the first lead frame 40B, and the second light emitting element 20Q is die-bonded to the die pad portion 42CB of the first lead frame 40C.
  • a conductive bonding material 90P is applied to the first surface 42Bs of the die pad section 42BB
  • a conductive bonding material 90Q is applied to the first surface 42Cs of the die pad section 42CB.
  • the first light emitting element 20P is mounted on the conductive bonding material 90P
  • the second light emitting element 20Q is mounted on the conductive bonding material 90Q.
  • the first light emitting element 20P is bonded to the die pad portion 42BB, and the second light emitting element 20Q is bonded to the die pad portion 42CB.
  • the wire WA1 connecting the first light emitting element 20P and the wire connecting portion 42AB of the first lead frame 40A is connected to the wire connecting portion 42DB of the second light emitting element 20Q and the first lead frame 40D.
  • a wire WA2 is formed. Wires WA1 and WA2 are each formed using a wire bonding apparatus.
  • a second frame including second lead frames 50A to 50D and relay frame 50E is prepared. Subsequently, by bending the second frame, the portions corresponding to the inner leads 52A to 52D of the second lead frames 50A to 50D and the portions corresponding to the suspension leads 52E and 53E of the intermediate frame 50E are bent.
  • both the first light receiving element 30P and the second light receiving element 30Q are die-bonded to the die pad portion 52DB of the second lead frame 50D.
  • the conductive bonding material 100P is applied to the first element placement portion 53D of the die pad portion 52DB, and the conductive bonding material 100Q is applied to the second element placement portion 54D.
  • the first light receiving element 30P is mounted on the conductive bonding material 100P, and the second light receiving element 30Q is mounted on the conductive bonding material 100Q.
  • both the first light receiving element 30P and the second light receiving element 30Q are bonded to the die pad portion 52DB.
  • wires WC1 to WC3 connecting the first light receiving element 30P and the second lead frames 50A, 50B, 50D, the second light receiving element 30Q, the second lead frames 50A, 50C, 50D, and the relay frame 50E and wires WB1 to WB4 are formed.
  • Wires WB1 to WB4 and WC1 to WC3 are each formed using a wire bonding apparatus.
  • the light-receiving side transparent resin forming process is performed after the second wire forming process.
  • the main surface 30Ps of the first light receiving element 30P is potted with a first transparent resin
  • the main surface 30Qs of the second light receiving element 30Q is potted with a second transparent resin.
  • the step of arranging the plate-like member is performed after the step of forming the light-receiving side transparent resin.
  • the first plate member 70P is placed on the first transparent resin
  • the second plate member 70Q is placed on the second transparent resin.
  • the first plate-shaped member 70P is arranged so as to approach the element main surface 30Ps from the second semiconductor region of the first light receiving element 30P toward the first semiconductor region by the wires WC1 to WC3 connected to the first light receiving element 30P.
  • lean to The second plate-like member 70Q is inclined by the wires WB1 to WB3 connected to the second light receiving element 30Q so as to approach the main surface 30Qs from the second semiconductor region of the second light receiving element 30Q toward the first semiconductor region.
  • the light-emitting side transparent resin forming process is performed after the plate-like member arranging process.
  • a first transparent resin is potted on the first plate member 70P
  • a second transparent resin is potted on the second plate member 70Q.
  • the first transparent resin in the light receiving side transparent resin forming step and the first transparent resin in the light emitting side transparent resin forming step are made of the same material.
  • the second transparent resin in the light receiving side transparent resin forming step and the second transparent resin in the light emitting side transparent resin forming step are made of the same material.
  • the combining process is performed after the first wire forming process and after the light emitting side transparent resin forming process.
  • the element main surface 20Ps of the first light emitting element 20P is in contact with the first transparent resin on the first plate member 70P
  • the element main surface 20Qs of the second light emitting element 20Q is on the second plate member 70Q.
  • the first lead frames 40A to 40D mounted with the light emitting elements 20P and 20Q are arranged so as to be in contact with the second transparent resin.
  • the die pad portion 42BB and the die pad portion 52DB are arranged such that the recess 46B and the recess 59DC face each other.
  • the sealing resin forming process is performed after the combining process.
  • the encapsulation resin forming step the encapsulation resin 80 is formed by transfer molding, for example.
  • the first lead frames 40A-40D are cut from the first frame, and the second lead frames 50A-50D are cut from the second frame.
  • the terminals 41A to 41D and 51A to 51D are formed by bending the portions of the first lead frames 40A to 40D and the second lead frames 50A to 50D protruding from the sealing resin 80 .
  • the insulation module 10 is manufactured through the above steps.
  • FIG. 15 is a circuit diagram schematically showing the circuit configuration of the insulation module 10 and the connection configuration between the insulation module 10 and the inverter circuit 500. As shown in FIG.
  • the inverter circuit 500 of this embodiment is a full-bridge inverter circuit, and includes a first inverter circuit 510 and a second inverter circuit 520 connected in parallel with the first inverter circuit 510 .
  • the first inverter circuit 510 has a first switching element 511 and a second switching element 512 connected in series with each other.
  • the second inverter circuit 520 has a first switching element 521 and a second switching element 522 connected in series.
  • Each switching element 511, 512, 521, 522 is, for example, a power transistor.
  • the insulation module 10 of the present embodiment is an insulation gate driver used for power transistors.
  • power transistors include IGBTs (Insulated Gate Bipolar Transistors) and MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors).
  • IGBTs Insulated Gate Bipolar Transistors
  • MOSFETs Metal-Oxide-Semiconductor Field Effect Transistors
  • MOSFETs are used for the switching elements 501 and 502 .
  • the insulation module 10 applies drive voltage signals to the gate of the first switching element 511 and the gate of the first switching element 521, respectively. That is, the insulation module 10 is a gate driver that drives the first switching elements 511 and 521 .
  • the positive terminal of the control power supply 503 is electrically connected to the terminal 51A of the insulation module 10 .
  • a terminal 51D of the insulation module 10 is electrically connected to both the source of the first switching element 511 of the first inverter circuit 510 and the source of the first switching element 521 of the second inverter circuit 520 .
  • the insulation module 10 includes a first light-emitting diode 20AP, a second light-emitting diode 20AQ, a first light-receiving diode 30AP, a second light-receiving diode 30AQ, a first control circuit 130A, and a second control circuit. It has a circuit 130B. A driving current of 10 mA or less is supplied to each of the light emitting diodes 20AP and 20AQ. The first control circuit 130A and the second control circuit 130B are included in the control circuit 35PB (see FIG. 12).
  • the first light emitting diode 20AP includes a first electrode 21P (anode electrode) and a second electrode 22P (cathode electrode) of the first light emitting element 20P.
  • the first electrode 21P of the first light emitting diode 20AP is electrically connected to the terminal 41A, and the second electrode 22P is electrically connected to the terminal 41B.
  • the first light-receiving diode 30AP is a diode that receives light from the first light-emitting diode 20AP.
  • the first light receiving diode 30AP is electrically connected to the first control circuit 130A and insulated from the first light emitting diode 20AP. In other words, the first light emitting diode 20AP is insulated from the first control circuit 130A.
  • the first light receiving diode 30AP has a first electrode 31P and a second electrode 32P.
  • the first electrode 31P is an anode electrode and the second electrode 32P is a cathode electrode. Both the first electrode 31P and the second electrode 32P are electrically connected to the first control circuit 130A.
  • the first control circuit 130A has a first Schmitt trigger 131A and a first output section 132A.
  • the first control circuit 130A generates a drive voltage signal based on the voltage change of the first light receiving diode 30AP caused by the first light receiving diode 30AP receiving light from the first light emitting diode 20AP.
  • the first Schmidt trigger 131A is electrically connected to both the first electrode 31P and the second electrode 32P of the first light receiving diode 30AP. Also, the first Schmitt trigger 131A is electrically connected to the terminals 51A and 51D. In other words, the first Schmitt trigger 131A is powered by the control power supply 503 . The first Schmitt trigger 131A transfers the voltage of the first light receiving diode 30AP to the first output section 132A. A predetermined hysteresis is given to the threshold voltage of the first Schmitt trigger 131A. With such a configuration, resistance to noise can be enhanced.
  • the first output section 132A has a first switching element 132Aa and a second switching element 132Ab connected in series.
  • a p-type MOSFET is used for the first switching element 132Aa
  • an n-type MOSFET is used for the second switching element 132Ab.
  • the first output section 132A is configured as a complementary MOS (CMOS).
  • CMOS complementary MOS
  • the switching elements 132Aa and 132Ab of the first output section 132A are turned on and off when the input/output voltage is 3V or more and 7V or less.
  • the source of the first switching element 132Aa is electrically connected to the terminal 51A.
  • the source of the second switching element 132Ab is electrically connected to the terminal 51D.
  • a node N between the drain of the first switching element 132Aa and the drain of the second switching element 132Ab is electrically connected to the terminal 51B.
  • Both the gate of the first switching element 132Aa and the gate of the second switching element 132Ab are electrically connected to the first Schmitt trigger 131A. That is, the signal from the first Schmitt trigger 131A is applied to both the gate of the first switching element 132Aa and the gate of the second switching element 132Ab.
  • the first output section 132A generates a drive voltage signal by complementarily turning on and off the first switching element 132Aa and the second switching element 132Ab based on the signal of the first Schmitt trigger 131A.
  • the first output section 132A applies the drive voltage signal to the gate of the first switching element 511 .
  • a signal composed of a plurality of pulses is input from the first light receiving element 30P to the first control circuit 130A.
  • the first control circuit 130A outputs a drive voltage signal as an output signal to the gate of the first switching element 511 based on a portion of the plurality of pulses excluding the first pulse.
  • the signal composed of a plurality of pulses is a pulse with a predetermined pulse cycle. For example, the interval between a first signal made up of a plurality of pulses and a second signal made up of a plurality of pulses transmitted after the first signal is longer than the pulse period.
  • the second light emitting diode 20AQ includes a first electrode 21Q (anode electrode) and a second electrode 22Q (cathode electrode) of the second light emitting element 20Q.
  • the first electrode 21Q of the second light emitting diode 20AQ is electrically connected to the terminal 41D, and the second electrode 22Q is electrically connected to the terminal 41C.
  • the second light receiving diode 30AQ is a diode that receives light from the second light emitting diode 20AQ.
  • the second light receiving diode 30AQ is electrically connected to the second control circuit 130B and insulated from the second light emitting diode 20AQ. In other words, the second light emitting diode 20AQ is insulated from the second control circuit 130B.
  • the second light receiving diode 30AQ has a first electrode 31Q and a second electrode 32Q.
  • the first electrode 31Q is an anode electrode and the second electrode 32Q is a cathode electrode. Both the first electrode 31Q and the second electrode 32Q are electrically connected to the second control circuit 130B.
  • the second control circuit 130B has a second Schmitt trigger 131B and a second output section 132B.
  • the second control circuit 130B generates a drive voltage signal based on the voltage change of the second light receiving diode 30AQ caused by the second light receiving diode 30AQ receiving the light from the second light emitting diode 20AQ.
  • the second Schmitt trigger 131B is electrically connected to both the first electrode 31Q and the second electrode 32Q of the second light receiving diode 30AQ. Also, the second Schmitt trigger 131B is electrically connected to the terminals 51A and 51D. In other words, the second Schmitt trigger 131B is powered by the control power supply 503 . The second Schmitt trigger 131B transfers the voltage of the second light receiving diode 30AQ to the second output section 132B. A predetermined hysteresis is given to the threshold voltage of the second Schmitt trigger 131B. With such a configuration, resistance to noise can be enhanced.
  • the second output section 132B has a first switching element 132Ba and a second switching element 132Bb that are connected in series with each other.
  • a p-type MOSFET is used for the first switching element 132Ba
  • an n-type MOSFET is used for the second switching element 132Bb.
  • the second output section 132B is configured as a complementary MOS.
  • the electrical connection mode of the first switching element 132Ba and the second switching element 132Bb is the same as the electrical connection mode of the first switching element 132Aa and the second switching element 132Ab, so detailed description thereof is omitted. do.
  • a signal composed of a plurality of pulses is input from the second light receiving element 30Q to the second control circuit 130B.
  • the second control circuit 130B outputs a drive voltage signal as an output signal to the gate of the first switching element 521 based on a portion of the plurality of pulses excluding the first pulse.
  • the manner of connection between the light emitting diodes 20AP, 20AQ and the terminals 41A to 41D can be arbitrarily changed.
  • the first electrode 21P of the first light emitting diode 20AP may be electrically connected to the terminal 41B, and the second electrode 22P may be electrically connected to the terminal 41A.
  • the first electrode 21Q of the second light emitting diode 20AQ may be electrically connected to the terminal 41C, and the second electrode 22Q may be electrically connected to the terminal 41D.
  • the isolation module 10 may be applied to a CAN (Controller Area Network) bus and an SPI (Serial Peripheral Interface) communication interface instead of being applied as an insulated gate driver.
  • CAN Controller Area Network
  • SPI Serial Peripheral Interface
  • the element main surface 20Ps of the first light emitting element 20P and the light receiving surface 33P of the first light receiving element 30P face each other in the z direction.
  • the first light-emitting element 20P and the first light-receiving element 20P are aligned in the x direction so that the center of the element main surface 20Ps of the first light-receiving element 20P and the center of the light-receiving surface 33P of the first light-receiving element 30P are aligned with each other.
  • a light receiving element 30P is arranged.
  • the first electrode 21P of the first light emitting element 20P is arranged closer to the first resin side surface 81 (see FIG. 5) than the center in the x direction in the element main surface 20Ps. Therefore, when viewed from the z-direction, the first electrode 21P is arranged at a position overlapping with the portion closer to the first resin side surface 81 with respect to the center of the light-receiving surface 33P of the first light-receiving element 30P in the x-direction. In other words, the first electrode 21P is arranged at a position that overlaps the portion opposite to the second semiconductor region with respect to the center of the light receiving surface 33P of the first light receiving element 30P in the x direction.
  • connection portion WAX of the wire WA1 connected to the first electrode 21P overlaps the portion opposite to the second semiconductor region with respect to the center of the light receiving surface 33P of the first light receiving element 30P in the x direction. are placed in In this way, compared to the case where the connection portion WAX of the wire WA1 is connected to the center of the element main surface 20Ps of the first light emitting element 20P in the x direction, the element of the first light emitting element 20P is The area of the wire WA1 overlapping both the main surface 20Ps and the light receiving surface 33P of the first light receiving element 30P is reduced. That is, the light from the first light emitting element 20P is less likely to interfere with the wire WA1.
  • the first plate-like member 70P has an element main surface 20Ps and a first plate-like member 70P that extend from the end near the second resin side surface 82 to the end near the first resin side surface 81 in the x direction of the element main surface 20Ps of the first light emitting element 20P. It is inclined with respect to the element main surface 20Ps so that the distance between the plate member 70P and the z-direction becomes large. In other words, it can be said that the first electrode 21P is biased toward a portion of the element main surface 20Ps where the distance between the first plate member 70P and the first plate member 70P in the z direction is greater than the center in the x direction.
  • connection portion WAX of the wire WA1 connected to the first electrode 21P is arranged in a space where the distance between the element main surface 20Ps and the first plate-shaped member 70P in the z direction is large. Therefore, compared to the case where the connection portion WAX of the wire WA1 is connected to the center of the element principal surface 20Ps of the first light emitting element 20P in the x direction, interference between the first plate member 70P and the wire WA1 causes The stress applied to the wire WA1 can be reduced.
  • the insulation module 10 includes a first light emitting element 20P having an element main surface 20Ps as a light emitting surface, a first electrode 21P as a pad formed on the element main surface 20Ps, and an element main surface 20Ps.
  • a first light-receiving element 30P having light-receiving surfaces 33P facing each other with a space therebetween and constituting a first light-emitting element 20P and a photocoupler is provided between the element main surface 20Ps and the light-receiving surface 33P, and has translucency and
  • a first plate member 70P having insulating properties and inclined with respect to both the element main surface 20Ps and the light receiving surface 33P, and a wire WA1 connected to the first electrode 21P are provided.
  • the first electrode 21P is arranged at a portion of the element main surface 20Ps where the distance from the first plate-like member 70P is larger than that at the center.
  • the first light receiving element 30P may not be able to generate the drive voltage signal despite receiving the light from the first light emitting element 20P. Therefore, in the insulation module 10, the amount of light received by the first light receiving element 30P from the first light emitting element 20P is reduced by, for example, reducing the distance between the first light emitting element 20P and the first light receiving element 30P in the x direction. It prevents it from becoming too small.
  • the first plate member 70P is interposed between the first light-emitting element 20P and the first light-receiving element 30P in an inclined state with respect to both the element main surface 20Ps and the light-receiving surface 33P, the first There is a limit to reducing the distance between the light emitting element 20P and the first light receiving element 30P.
  • the insulation module 10 of the present embodiment compared with the configuration in which the wire WA1 is connected to the first electrode at the center of the element main surface 20Ps, the element main surface 20Ps and the light receiving surface The area of the wire WA1 that overlaps with 33P is reduced. This makes it difficult for the light from the first light emitting element 20P to interfere with the wire WA1, so that the amount of light received by the light receiving surface 33P of the first light receiving element 30P can be increased. Therefore, it is possible to reduce the possibility that the drive voltage signal cannot be generated even though the first light receiving element 30P receives the light from the first light emitting element 20P. Since the second light emitting element 20Q and the second light receiving element 30Q are similar to the first light emitting element 20P and the first light receiving element 30P, the same effect as described above can be obtained.
  • the maximum distance between the element main surface 20Ps (light emitting surface) of the first light emitting element 20P and the first plate member 70P facing the element main surface 20Ps in the z direction is less than thickness.
  • the height of the insulation module 10 can be reduced.
  • the smaller the maximum distance the greater the stress due to bending of the wire WA1 by the first plate member 70P.
  • the wire WA1 is arranged in the space where the distance between the element main surface 20Ps and the first plate member 70P is large. It is possible to reduce the stress caused by bending the wire WA1. Since the second light emitting element 20Q and the second light receiving element 30Q are similar to the first light emitting element 20P and the first light receiving element 30P, the same effect as described above can be obtained.
  • the maximum distance between the element main surface 20Ps (light emitting surface) of the first light emitting element 20P and the first plate member 70P facing the element main surface 20Ps in the z direction is less than thickness.
  • the height of the insulation module 10 can be reduced.
  • the smaller the maximum distance the greater the stress due to bending of the wire WA1 by the first plate member 70P.
  • the wire WA1 is arranged in the space where the distance between the element main surface 20Ps and the first plate member 70P is large. It is possible to reduce the stress caused by bending the wire WA1. Since the second light emitting element 20Q and the second light receiving element 30Q are similar to the first light emitting element 20P and the first light receiving element 30P, the same effect as described above can be obtained.
  • the distance between the element main surface 20Ps of the first light emitting element 20P and the light receiving surface 33P of the first light receiving element 30P is smaller than the thickness of the first light receiving element 30P. According to this configuration, the amount of light received from the first light emitting element 20P can be increased by bringing the element main surface 20Ps of the first light emitting element 20P closer to the light receiving surface 33P of the first light receiving element 30P.
  • the wire WA1 is arranged in the space where the distance between the element main surface 20Ps and the first plate member 70P is large. It is possible to reduce the stress caused by bending the wire WA1. Since the second light emitting element 20Q and the second light receiving element 30Q are similar to the first light emitting element 20P and the first light receiving element 30P, the same effect as described above can be obtained.
  • the thickness of the first light emitting element 20P is thinner than the thickness of the first light receiving element 30P. Also, the thickness of the second light emitting element 20Q is thinner than the thickness of the second light receiving element 30Q. With this configuration, the height of the insulation module 10 can be reduced.
  • the minimum distance between the first electrode 21P of the first light emitting element 20P and the first plate member 70P facing the first electrode 21P is the element main surface 20Ps (light emitting surface) of the first light emitting element 20P. ) and the light receiving surface 33P of the first light receiving element 30P.
  • the minimum distance between the element main surface 20Ps of the first light emitting element 20P and the first plate-like member 70P in the z direction is increased, so that the wire WA1 is bent by the first plate-like member 70P.
  • the sealing resin 80 includes a first resin side surface 81 provided with a plurality of terminals 41A to 41D and a second resin side surface 82 provided with a plurality of terminals 51A to 51D.
  • Concavo-convex portions 87 are provided in portions of the first resin side surface 81 between terminals adjacent to each other in the y direction among the plurality of terminals 41A to 41D.
  • Concavo-convex portions 88 are provided in portions of the second resin side surface 82 between terminals adjacent to each other in the y direction among the plurality of terminals 51A to 51D.
  • the die pad portion 52DB of the second lead frame 50D includes suspension leads 58D.
  • the suspension lead 58D is exposed from a portion of the second resin side surface 82 between the terminal 51A and the terminal 51B.
  • Concavo-convex portions 88 are provided on both the portion between the terminal 51A and the suspension lead 58D and the portion between the terminal 51B and the suspension lead 58D on the second resin side surface 82 .
  • both the creepage distance between the terminal 51A and the suspension lead 58D and the creepage distance between the terminal 51B and the suspension lead 58D can be increased. Therefore, both the insulation between the terminal 51A and the suspension lead 58D and the insulation between the terminal 51B and the suspension lead 58D can be enhanced.
  • the relay frame 50E has a first suspension lead 52E and a second suspension lead 53E.
  • the first suspension lead 52E is exposed from the portion between the terminals 51D and 51C on the second resin side surface 82
  • the second suspension lead 53E is exposed from the portion between the terminals 51C and 51B on the second resin side surface 82. doing.
  • An uneven portion 88 is provided in each portion between the second suspension lead 53E and the terminal 51B.
  • the creepage distance between the terminal 51D and the first suspension lead 52E, the creepage distance between the first suspension lead 52E and the terminal 51C, and the creepage distance between the terminal 51C and the second suspension lead 53E are The creepage distance and the creepage distance between the second suspension lead 53E and the terminal 51B can be increased. Therefore, the insulation between the terminals 51D and 51C and the first suspension lead 52E and the insulation between the terminals 51C and 51B and the second suspension lead 53E can be improved.
  • a recess 46B is formed in the die pad portion 42BB of the first lead frame 40B that supports the first light emitting element 20P, and a recess 46B is formed in the die pad portion 52DB of the second lead frame 50D that supports the first light receiving element 30P. is formed with a recess 59DC.
  • the die pad portion 42BB and the die pad portion 52DB are arranged such that the recess 46B and the recess 59DC face each other.
  • the positions of the first light emitting element 20P and the first light receiving element 30P are adjusted using the recess 46B and the recess 59DC as marks. Therefore, when viewed from the z-direction, it is possible to precisely align the first light-emitting element 20P and the first light-receiving element 30P in the direction perpendicular to the z-direction. Since the second light emitting element 20Q and the second light receiving element 30Q are similar to the first light emitting element 20P and the first light receiving element 30P, the same effect as described above can be obtained.
  • the first light receiving element 30P includes a photoelectric conversion element 35PA, a control circuit 35PB that receives a signal from the photoelectric conversion element 35PA, and an insulating layer 36P that is laminated on the photoelectric conversion element 35PA and the control circuit 35PB. and have.
  • the insulating layer 36P includes a first insulating portion 36PA formed on the photoelectric conversion element 35PA and a second insulating portion 36PB formed on the control circuit 35PB.
  • a plurality of wiring layers 38PA to 38PB are formed in the second insulating portion 36PB. No wiring layer is formed in the first insulating portion 36PA.
  • a wiring layer electrically connected to the control circuit 35PB is not formed in the first insulating portion 36PA into which the light from the first light emitting element 20P is incident. It is possible to suppress the malfunction of the control circuit 35PB due to the light of the .
  • the insulation module 10 includes a first photocoupler composed of a first light emitting element 20P and a first light receiving element 30P, and a second photocoupler composed of a second light emitting element 20Q and a second light receiving element 30Q. and have.
  • Each light emitting element 20P is mounted on the first lead frame 40, and each light receiving element 30P is mounted on the second lead frame 50. As shown in FIG.
  • both the signal communicated by the first photocoupler and the signal communicated by the second photocoupler are transmitted from the first lead frame 40 toward the second lead frame 50 . That is, the insulation module 10 can output two types of signals in the same transmission direction.
  • the insulation module 10 includes a first transparent resin 60P covering the first light emitting element 20P and the first light receiving element 30P, a second transparent resin 60Q covering the second light emitting element 20Q and the second light receiving element 30Q, It has The sealing resin 80 seals both the first transparent resin 60P and the second transparent resin 60Q, and has a separation wall portion 89 separating the first transparent resin 60P and the second transparent resin 60Q.
  • the first light emitting element 20P is an element that emits light of a first wavelength
  • the second light emitting element 20Q is an element that emits light of a second wavelength different from the first wavelength.
  • the first transparent resin 60P is made of a resin material that transmits light of the first wavelength but does not transmit light of the second wavelength.
  • the second transparent resin 60Q is made of a resin material that transmits light of the second wavelength but does not transmit light of the first wavelength.
  • the light of the first wavelength is suppressed from advancing into the second transparent resin 60Q, so it is possible to suppress the light from the first light emitting element 20P from entering the second light receiving element 30Q. . Accordingly, it is possible to suppress the light of the first wavelength from being received by the second light receiving element 30Q. Since the light of the second wavelength is suppressed from advancing into the first transparent resin 60P, it is possible to suppress the light from the second light emitting element 20Q from entering the first light receiving element 30P. Accordingly, it is possible to prevent the first light receiving element 30P from receiving light of the second wavelength.
  • the configuration of the insulation module 10 according to the second embodiment will be described with reference to FIG. 16 .
  • the insulation module 10 of this embodiment differs from that of the first embodiment in the configuration of each of the light emitting elements 20P and 20Q.
  • the same reference numerals are given to the components common to the insulation module 10 of the first embodiment, and the description thereof will be omitted.
  • FIG. 16 shows the first light emitting element 20P, the first light receiving element 30P, the die pad portion 42BB of the first lead frame 40B, the die pad portion 52DB of the second lead frame 50D, the first transparent resin 60P, the first plate member 70P, and the It mainly shows the cross-sectional structure of the sealing resin 80 .
  • the first light emitting element 20P having a configuration different from that of the first embodiment will be described in detail. Since the configuration of the second light emitting element 20Q is the same as that of the first light emitting element 20P, detailed description thereof will be omitted.
  • the first light emitting element 20P is formed to be longer in the x direction than in the first embodiment. That is, in the present embodiment, the shape of the first light emitting element 20P viewed from the z direction is a rectangular shape having a longitudinal direction and a lateral direction.
  • the longitudinal direction of the first light emitting element 20P is the x direction
  • the lateral direction is the y direction.
  • the element principal surface 20Ps of the first light emitting element 20P includes a protruding region 20Pa protruding toward the first resin side surface 81 (see FIG. 5) in the longitudinal direction (x direction) of the first light receiving element 30P.
  • the element main surface 20Ps (light emitting surface) of the first light emitting element 20P is separated from the first plate member 70P in the longitudinal direction from the second resin side surface 82 (see FIG. 5) toward the first resin side surface 81. ing.
  • the second resin side surface 82 side corresponds to the "first side”
  • the first resin side surface 81 side corresponds to the "second side”.
  • the first electrode 21P of the first light emitting element 20P is provided at a position shifted from the center in the longitudinal direction (x direction) of the main surface 20Ps of the element. Specifically, the first electrode 21P is arranged in a portion of the element main surface 20Ps, where the distance from the first plate member 70P is larger than the center in the x direction. In this embodiment, the first electrode 21P is provided in the protruding region 20Pa. In other words, the first electrode 21P is provided closer to the first resin side surface 81 than the first light receiving element 30P. That is, the first electrode 21P is provided at a position that does not overlap the light receiving surface 33P of the first light receiving element 30P when viewed in the z direction.
  • a wire WA1 is connected to the first electrode 21P.
  • the wire WA1 is connected to a position shifted from the center of the element main surface 20Ps of the first light emitting element 20P in the x direction so as not to contact the first plate member 70P.
  • the connection portion WAX of the wire WA1 that is connected to the first electrode 21P is arranged in a portion of the element main surface 20Ps where the distance from the first plate member 70P is larger than the center in the x direction. ing.
  • the connecting portion WAX is arranged in the protruding region 20Pa. In other words, the connection portion WAX is provided closer to the first resin side surface 81 than the first light receiving element 30P.
  • the connecting portion WAX is provided at a position not overlapping the light receiving surface 33P of the first light receiving element 30P when viewed in the z direction. Since the wire WA1 extends from the connection portion WAX toward the first resin side surface 81, the wire WA1 is provided so as not to overlap the first light receiving element 30P when viewed from the z direction.
  • the first light emitting element 20P has a rectangular shape having a longitudinal direction and a lateral direction when viewed from the z direction.
  • the element main surface 20Ps (light emitting surface) of the first light emitting element 20P is the first plate as it goes from the second resin side surface 82 side (first side) to the first resin side surface 81 side (second side) in the longitudinal direction. It is separated from the shaped member 70P.
  • the first electrode 21P of the first light emitting element 20P is arranged in the longitudinal direction at a portion of the element main surface 20Ps where the distance between it and the first plate-like member 70P is larger than the center in the x direction. .
  • the wire WA1 is connected to the first electrode 21P so as not to contact the first plate member 70P.
  • the wire WA1 overlaps both the element main surface 20Ps and the light receiving surface 33P when viewed from the z direction. area becomes smaller. This makes it difficult for the light from the first light emitting element 20P to interfere with the wire WA1, so that the amount of light received by the light receiving surface 33P of the first light receiving element 30P can be increased. Therefore, it is possible to reduce the possibility that the drive voltage signal cannot be generated even though the first light receiving element 30P receives the light from the first light emitting element 20P. Since the second light emitting element 20Q and the second light receiving element 30Q are similar to the first light emitting element 20P and the first light receiving element 30P, the same effect as described above can be obtained.
  • the insulation module 10 includes a first light emitting element 20P having an element main surface 20Ps as a light emitting surface, a first electrode 21P as a pad formed on the element main surface 20Ps, and an element main surface 20Ps.
  • a first light-receiving element 30P having light-receiving surfaces 33P facing each other with a space therebetween and constituting a first light-emitting element 20P and a photocoupler is provided between the element main surface 20Ps and the light-receiving surface 33P, and has translucency and
  • a first plate member 70P having insulating properties and inclined with respect to both the element main surface 20Ps and the light receiving surface 33P, and a wire WA1 connected to the first electrode 21P are provided.
  • the first light emitting element 20P has a rectangular shape having a longitudinal direction and a lateral direction when viewed from the z direction.
  • the element main surface 20Ps (light emitting surface) of the first light emitting element 20P is the first plate as it goes from the second resin side surface 82 side (first side) to the first resin side surface 81 side (second side) in the longitudinal direction. It is separated from the shaped member 70P.
  • the element main surface 20Ps is spaced apart from the first plate member 70P as it goes from the first side toward the second side in the longitudinal direction.
  • the element main surface 20Ps includes a protruding region 20Pa protruding from the first light receiving element 30P to the second side in the longitudinal direction.
  • the first electrode 21P is arranged in the protruding region 20Pa.
  • the first electrode 21P is arranged on the second longitudinal side (first resin side surface 81 side) of the region overlapping both the element main surface 20Ps and the light receiving surface 33P when viewed in the z direction. Therefore, the wire WA1 does not exist in the region overlapping both the element main surface 20Ps and the light receiving surface 33P. Therefore, the amount of light received by the light receiving surface 33P of the first light receiving element 30P can be increased. Therefore, it is possible to reduce the possibility that the drive voltage signal cannot be generated even though the first light receiving element 30P receives the light from the first light emitting element 20P. Since the second light emitting element 20Q and the second light receiving element 30Q are similar to the first light emitting element 20P and the first light receiving element 30P, the same effect as described above can be obtained.
  • the configuration of the insulation module 10 of the third embodiment will be described with reference to FIG. 17 .
  • the insulation module 10 of this embodiment differs from that of the first embodiment in the configuration of the light receiving elements 30P and 30Q.
  • common reference numerals are assigned to components common to the insulation module 10 of the first embodiment, and descriptions thereof are omitted.
  • FIG. 17 shows a cross-sectional structure near the element main surface 30Ps of the first light receiving element 30P.
  • FIG. 17 shows an enlarged sectional structure of the photoelectric conversion element 35PA and its periphery in the element main surface 30Ps of the first light receiving element 30P.
  • the cross-sectional structure of the control circuit 35PB and its periphery in the element main surface 30Ps of the first light receiving element 30P is the same as that of the first embodiment shown in FIG.
  • the first light receiving element 30P having a configuration different from that of the first embodiment will be described in detail. Since the configuration of the second light receiving element 30Q is the same as that of the first light receiving element 30P, detailed description thereof will be omitted.
  • a wiring layer is also provided in the first insulating portion 36PA corresponding to the first semiconductor region 34PA in the insulating layer 36P.
  • the wiring layers provided in the first insulating portion 36PA differ in the number of layers from the wiring layers 38PA to 38PE of the second insulating portion 36PB. More specifically, the first insulating portion 36PA and the second insulating portion 36PB have the same number of layers of insulating films (insulating films 37PA to 37PE). On the other hand, the number of wiring layers of the first insulating portion 36PA is smaller than the number of layers of the second insulating portion 36PB (wiring layers 38PA to 38PE).
  • the first insulating portion 36PA has at least one insulating film on which no wiring layer is formed.
  • the first insulating portion 36PA does not have the wiring layers 38PB and 38PD. Therefore, in the first insulating portion 36PA, the insulating films 37PB and 37PD become insulating films in which no wiring layer is formed.
  • the wiring layers 38PA, 38PC, and 38PE of the first insulating portion 36PA correspond to the "second wiring layer”
  • the wiring layers 38PA to 38PE of the second insulating portion 36PB correspond to the "first wiring layer”. corresponds to
  • the first light receiving element 30P of the present embodiment at least one first wiring layer is formed in the second insulating portion 36PB, and no wiring layer is formed in the first insulating portion 36PA. It can also be said that at least one layer is provided. Further, in the first light receiving element 30P of the present embodiment, the second insulating portion 36PB is formed with a plurality of first wiring layers, and the first insulating portion 36PA has a smaller number of first wiring layers than the second insulating portion 36PB. It can also be said that a second wiring layer is formed.
  • the wiring layers 38PA, 38PC, and 38PE in the first insulating portion 36PA are provided at positions overlapping the photoelectric conversion element 35PA when viewed from the z direction.
  • the photoelectric conversion element 35PA has regions protruding from the wiring layers 38PA, 38PC, and 38PE when viewed in the z direction.
  • Insulating films 37PA to 37PE are provided on regions of the photoelectric conversion element 35PA protruding from the wiring layers 38PA, 38PC, and 38PE.
  • the photoelectric conversion element 35PA By adjusting the area of each of the wiring layers 38PA, 38PC, and 38PE provided on the photoelectric conversion element 35PA (hereinafter simply referred to as the area of each of the wiring layers 38PA, 38PC, and 38PE) as viewed from the z-direction, the photoelectric The amount of light received by the conversion element 35PA may be adjusted. That is, when designing the insulation module 10, the areas of the wiring layers 38PA, 38PC, and 38PE are set so that the amount of light received by the photoelectric conversion element 35PA is within a preset range.
  • the area of each of the wiring layers 38PA, 38PC, and 38PE is adjusted so that the ratio of the light that enters the photoelectric conversion element 35PA in the vertical direction without being reflected is 60% or more and 70% or less. is set.
  • the percentage of light entering the photoelectric conversion element 35PA in the vertical direction without reflection is not limited to 60% or more and 70% or less. 60% or more, 70% or more and 80% or less, 80% or more and 90% or less, or the like.
  • the ratio of light entering the photoelectric conversion element 35PA in the vertical direction without being reflected can be adjusted by adjusting the wiring patterns of the wiring layers 38PA, 38PC, and 38PE according to the characteristics of the photoelectric conversion element 35PA. adjusted accordingly.
  • the insulating layer 36P includes a first insulating portion 36PA formed on the photoelectric conversion element 35PA and a second insulating portion 36PB formed on the control circuit 35PB.
  • Wiring layers 38PA to 38PE are formed in the second insulating portion 36PB, and wiring layers 38PA, 38PC, and 38PE, which are smaller in number than the second insulating portion 36PB, are formed in the first insulating portion 36PA. It can also be said that at least one layer in which no wiring layer is formed is provided in the first insulating portion 36PA.
  • the number of wiring layers electrically connected to the control circuit 35PB is smaller in the first insulating portion 36PA into which the light from the first light emitting element 20P is incident than in the second insulating portion 36PB. It is possible to eliminate malfunction of the control circuit 35PB caused by rushing light or the like when the amount of light from the first light emitting element 20P is large. Further, by adjusting the areas of the respective wiring layers 38PA, 38PC, and 38PE, the ratio of the light that enters the photoelectric conversion element 35PA in the vertical direction without being reflected is adjusted according to the characteristics of the photoelectric conversion element 35PA. can do.
  • the configuration of the insulation module 10 according to the fourth embodiment will be described with reference to FIG. 18 .
  • the insulation module 10 of this embodiment differs from that of the first embodiment in the configuration of the light receiving elements 30P and 30Q.
  • common reference numerals are assigned to components common to the insulation module 10 of the first embodiment, and descriptions thereof are omitted.
  • FIG. 18 shows a cross-sectional structure near the element main surface 30Ps of the first light receiving element 30P.
  • FIG. 18 shows an enlarged cross-sectional structure of the photoelectric conversion element 35PA and its periphery in the element main surface 30Ps of the first light receiving element 30P.
  • the cross-sectional structure of the control circuit 35PB and its periphery in the element main surface 30Ps of the first light receiving element 30P is the same as that of the first embodiment shown in FIG.
  • the first light receiving element 30P having a configuration different from that of the first embodiment will be described in detail. Since the configuration of the second light receiving element 30Q is the same as that of the first light receiving element 30P, detailed description thereof will be omitted.
  • a resin layer 200 is provided on the insulating layer 36P. That is, the resin layer 200 is formed on the surface 36Ps of the insulating layer 36P. In this embodiment, the resin layer 200 is formed over the entire surface 36Ps of the insulating layer 36P. That is, the surface 200s of the resin layer 200 constitutes the element main surface 30Ps of the first light receiving element 30P.
  • the resin layer 200 has insulating properties and is made of a resin material that selectively absorbs or blocks infrared rays.
  • the resin layer 200 corresponds to an "infrared cut layer". Therefore, it can be said that the infrared cut layer is made of a resin material.
  • the resin layer 200 is formed, for example, by coating the surface 36Ps of the insulating layer 36P.
  • the resin layer 200 is made of, for example, a resin material having a lower light transmittance than the first transparent resin 60P.
  • the resin layer 200 is made of a material having a lower light transmittance than, for example, the first plate member 70P.
  • the insulating layer 36P is made of a material that transmits infrared rays.
  • the material of the insulating layer 36P is not limited to this, and is arbitrary.
  • the formation range of the resin layer 200 on the surface 36Ps of the insulating layer 36P can be arbitrarily changed.
  • the resin layer 200 may be formed only on a region of the surface 36Ps of the insulating layer 36P corresponding to the first insulating portion 36PA.
  • the thickness of the resin layer 200 can be changed arbitrarily. In one example, the thickness of the resin layer 200 may be thicker than the thickness of the insulating layer 36P. In another example, the thickness of the resin layer 200 may be thinner than the thickness of the insulating layer 36P.
  • the first light receiving element 30P has a resin layer 200 provided on the insulating layer 36P.
  • the resin layer 200 covers at least the first insulating portion 36PA formed on the photoelectric conversion element 35PA.
  • the resin layer 200 absorbs or blocks infrared light, the light from the first light emitting element 20P is weakened by the resin layer 200 and supplied to the first light receiving element 30P. Therefore, the amount of light received by the first light receiving element 30P from the first light emitting element 20P can be reduced. Since the second light receiving element 30Q has the same configuration as the first light receiving element 30P, the above effect can be obtained.
  • the configuration of the insulation module 10 according to the fifth embodiment will be described with reference to FIG. 19 .
  • the insulating module 10 of this embodiment differs from that of the first embodiment in the configuration of each of the transparent resins 60P and 60Q.
  • common reference numerals are assigned to components common to the insulation module 10 of the first embodiment, and descriptions thereof are omitted.
  • FIG. 19 shows the first light emitting element 20P, the first light receiving element 30P, the die pad portion 42BB of the first lead frame 40B, the die pad portion 52DB of the second lead frame 50D, the first transparent resin 60P, the first plate member 70P, and the It mainly shows the cross-sectional structure of the sealing resin 80 .
  • the first transparent resin 60P having a different configuration from that of the first embodiment will be described in detail. Since the configuration of the second transparent resin 60Q is the same as the configuration of the first transparent resin 60P, detailed description thereof will be omitted.
  • the light-receiving side transparent resin 60PB of the first transparent resin 60P of this embodiment is not in contact with both side surfaces of the first light receiving element 30P in the x direction. Therefore, the sealing resin 80 is in contact with both side surfaces in the x direction of the first light receiving element 30P.
  • the light-receiving side transparent resin 60PB is also not in contact with both side surfaces of the first light-receiving element 30P in the y direction. Therefore, the sealing resin 80 is in contact with both side surfaces in the y direction of the first light receiving element 30P. In the illustrated example, the sealing resin 80 is in contact with the entire side surface of the first light receiving element 30P exposed from the conductive bonding material 100P.
  • the light receiving side transparent resin 60PB covers the element main surface 30Ps of the first light receiving element 30P. That is, the light-receiving side transparent resin 60PB is provided between the element principal surface 30Ps of the first light receiving element 30P and the first plate member 70P in the z direction, and is not disposed below the element principal surface 30Ps. No. In the cross-sectional structure of the light receiving side transparent resin 60PB cut along the xz plane, the curved surfaces 61B and 62B of the light receiving side transparent resin 60PB are shorter than the curved surfaces 61B and 62B of the first embodiment.
  • the curved surfaces 61B and 62B constitute interfaces between the light-receiving side transparent resin 60PB and the sealing resin 80, respectively. That is, in this embodiment, the interface between the light receiving side transparent resin 60PB and the sealing resin 80 is smaller than in the first embodiment.
  • the shape of the curved surface 61B of this embodiment is different from the curved surface 61B of the first embodiment.
  • the curved surface 61B is curved such that the center of curvature is located on the side opposite to the die pad portion 52DB with respect to the curved surface 61B.
  • the curved surface 62B of the present embodiment is curved such that the center of curvature is located on the opposite side of the curved surface 62B from the first plate member 70P.
  • the curved surface 62B of this embodiment differs from the curved surface 62B of the first embodiment in the position of the center of curvature and the radius of curvature.
  • the curved surface 62B of the present embodiment has, for example, a center of curvature located closer to the first plate member 70P than the center of curvature of the curved surface 62B of the first embodiment, and a radius of curvature of the curved surface 62B of the first embodiment. smaller than the radius of curvature.
  • the sealing resin 80 covers the side surface of the first light receiving element 30P. According to this configuration, the interface between the light receiving side transparent resin 60PB of the first transparent resin 60P and the sealing resin 80 can be made smaller. Therefore, it is possible to suppress peeling of the sealing resin 80 from the light-receiving side transparent resin 60PB due to temperature.
  • the configuration of the insulation module 10 according to the sixth embodiment will be described with reference to FIG.
  • the insulation module 10 of this embodiment differs from that of the first embodiment in the electrical connection configuration between the first light emitting element 20P and the first light receiving element 30P and the terminals.
  • common reference numerals are assigned to components common to the insulation module 10 of the first embodiment, and descriptions thereof are omitted.
  • FIG. 20 is a circuit diagram schematically showing the circuit configuration of the insulation module 10 and the connection configuration between the insulation module 10 and the inverter circuit 500, respectively.
  • the inverter circuit 500 of this embodiment is a half-bridge inverter circuit, and has a first switching element 501 and a second switching element 502 connected in series.
  • the positive terminal of the control power supply 503 is electrically connected to the terminal 51A of the insulation module 10 .
  • Terminal 51D of insulation module 10 is electrically connected between the source of first switching element 501 and the drain of second switching element 502 .
  • the insulation module 10 includes a first light-emitting diode 20AP, a second light-emitting diode 20AQ, a first light-receiving diode 30AP, a second light-receiving diode 30AQ, a first control circuit 230A, and a second control circuit. It has a circuit 230B.
  • the configurations of the light-emitting diodes 20AP, 20AQ and the light-receiving diodes 30AP, 30AQ are the same as in the first embodiment.
  • the first light emitting diode 20AP is connected to terminals 51A and 51D. Specifically, the first electrode 21P (anode electrode) of the first light emitting diode 20AP is electrically connected to the terminal 51A, and the second electrode 22P (cathode electrode) is electrically connected to the terminal 51D.
  • a control power supply 503 is electrically connected to the terminal 51A. The control power supply 503 supplies drive voltage to the first light emitting diode 20AP and the second control circuit 230B.
  • the first light receiving diode 30AP is electrically connected to the first control circuit 230A and insulated from the first light emitting diode 20AP.
  • the first light emitting diode 20AP is insulated from the first control circuit 230A.
  • the first light emitting diode 20AP is electrically connected to the second control circuit 230B.
  • Both the first electrode 31P (anode electrode) and the second electrode 32P (cathode electrode) of the first light receiving diode 30AP are electrically connected to the first control circuit 230A.
  • the first control circuit 230A is electrically connected to the terminals 41A-41D.
  • the second light emitting diode 20AQ is connected to terminals 41A and 41D. Specifically, the first electrode 21Q (anode electrode) of the second light emitting diode 20AQ is electrically connected to the terminal 41A, and the second electrode 22Q (cathode electrode) is electrically connected to the terminal 41D.
  • a control power supply 504 is electrically connected to the terminal 41A.
  • a control power supply 504 supplies a drive voltage to the second light emitting diode 20AQ and the first control circuit 230A.
  • the second light receiving diode 30AQ is electrically connected to the second control circuit 230B and insulated from the second light emitting diode 20AQ.
  • the second light emitting diode 20AQ is insulated from the second control circuit 230B.
  • the second light emitting diode 20AQ is electrically connected to the first control circuit 230A.
  • Both the first electrode 31Q (anode electrode) and the second electrode 32Q (cathode electrode) of the second light receiving diode 30AQ are electrically connected to the second control circuit 230B.
  • the second control circuit 230B is electrically connected to the terminals 51A-51D.
  • the first light-emitting diode 20AP and the first light-receiving diode 30AP constitute a photocoupler for transmitting signals from the terminals 51A to 51D, that is, the inverter circuit 500 to the terminals 41A to 41D.
  • the second light-emitting diode 20AQ and the second light-receiving diode 30AQ constitute a photocoupler that transmits signals from the terminals 41A-41D to the terminals 51A-51D. That is, the insulation module 10 of this embodiment is configured to transmit signals in both directions.
  • the first control circuit 230A has a first Schmitt trigger 231A, a first output 232A, a first current source 233A and a first driver 234A.
  • the first current source 233A and the first driver 234A constitute a driving section for driving the second light emitting diode 20AQ.
  • the configurations of the first Schmidt trigger 231A and the first output section 232A are the same as in the first embodiment.
  • the connection mode between the first Schmidt trigger 231A and the first light receiving diode 30AP and the connection mode between the first Schmidt trigger 231A and the first output section 232A are the same as in the first embodiment.
  • the first output section 232A is connected to terminals 41A, 41B, and 41D. That is, the first control circuit 230A is connected to the terminals 41A, 41B, and 41D instead of the terminals 51B to 51D to which the inverter circuit 500 is electrically connected.
  • 232 A of 1st output parts have the 1st switching element 232Aa and the 2nd switching element 232Ab which comprise complementary MOS similarly to 1st Embodiment.
  • the first current source 233A is electrically connected to the terminal 41A and the first electrode 21Q of the second light emitting diode 20AQ. Thereby, a constant current can be supplied from the terminal 41A to the second light emitting diode 20AQ.
  • the first driver 234A is electrically connected to both the first current source 233A and the terminal 41C.
  • the first driver 234A is a circuit that controls current supply to the second light emitting diode 20AQ. That is, the first driver 234A controls current supply to the second light emitting diode 20AQ based on the control signal supplied to the terminal 41C from the outside of the insulation module 10.
  • FIG. In one example, when the control signal is input to the first driver 234A, the first driver 234A supplies current to the second light emitting diode 20AQ.
  • the control signal is not input to the first driver 234A, the first driver 234A does not supply current to the second light emitting diode 20AQ.
  • the second control circuit 230B has a second Schmitt trigger 231B, a second output section 232B, a second current source 233B, and a second driver 234B.
  • the second current source 233B and the second driver 234B constitute a driving section for driving the first light emitting diode 20AP.
  • the configurations of the second Schmidt trigger 231B and the second output section 232B are the same as in the first embodiment.
  • the aspect is the same as that of the first embodiment.
  • the second output section 232B has a first switching element 232Ba and a second switching element 232Bb that constitute a complementary MOS, as in the first embodiment.
  • the second current source 233B is electrically connected to the terminal 51A and the first electrode 21P of the first light emitting diode 20AP. Thereby, a constant current can be supplied from the terminal 51A to the first light emitting diode 20AP.
  • the second driver 234B is electrically connected to both the second current source 233B and the terminal 51B.
  • the second driver 234B is a circuit that controls current supply to the first light emitting diode 20AP. That is, the second driver 234B controls current supply to the first light emitting diode 20AP based on the control signal supplied to the terminal 51B from the outside of the insulation module 10. FIG. In one example, when the control signal is input to the second driver 234B, the second driver 234B supplies current to the first light emitting diode 20AP. On the other hand, when the control signal is not input to the second driver 234B, the second driver 234B does not supply current to the first light emitting diode 20AP.
  • the terminal 51B is electrically connected to a detection circuit 505 that detects the voltage between the source of the first switching element 501 and the drain of the second switching element 502 of the inverter circuit 500 .
  • the detection circuit 505 supplies an abnormal signal as a control signal to the terminal 51B.
  • detection circuit 505 provides an abnormal signal to terminal 51B when the voltage between the source of first switching element 501 and the drain of second switching element 502 is higher than a preset threshold. It is configured.
  • the first control circuit 230A may have a current limiting resistor instead of the first current source 233A.
  • the second control circuit 230B may have a current limiting resistor instead of the second current source 233B.
  • the first driver 234A and the first current source 233A may be omitted from the first control circuit 230A.
  • the first electrode 21Q of the second light emitting diode 20AQ is electrically connected to the terminal 41A
  • the second electrode 22Q is electrically connected to the terminal 41D.
  • the second driver 234B and the second current source 233B may be omitted from the second control circuit 230B.
  • the first electrode 21P of the first light emitting diode 20AP is electrically connected to the terminal 51A
  • the second electrode 22P is electrically connected to the terminal 51D.
  • the insulation module 10 includes a first photocoupler composed of a first light emitting element 20P and a first light receiving element 30P and a second photocoupler composed of a second light emitting element 20Q and a second light receiving element 30Q. and have.
  • the first light emitting element 20P is electrically connected to the first lead frame 40
  • the second light emitting element 20Q is electrically connected to the second lead frame 50.
  • the first light receiving element 30P is electrically connected to the second lead frame 50
  • the second light receiving element 30Q is electrically connected to the first lead frame 40.
  • the first photocoupler transmits a signal from the first lead frame 40 to the second lead frame 50
  • the second photocoupler transmits a signal from the second lead frame 50 to the first lead frame 40. to communicate.
  • the isolation module 10 can transmit signals in both directions.
  • each of the above-described embodiments is an example of a form that the insulation module related to the present disclosure can take, and is not intended to limit the form.
  • the insulation module related to the present disclosure may take forms different from those illustrated in the above embodiments.
  • One example is a form in which a part of the configuration of each of the above embodiments is replaced, changed, or omitted, or a form in which a new configuration is added to each of the above embodiments.
  • each of the following modifications can be combined with each other as long as they are not technically inconsistent.
  • the same reference numerals as those in each of the above-described embodiments are attached to the portions common to each of the above-described embodiments, and the description thereof is omitted.
  • the first to sixth embodiments can be implemented in combination with each other.
  • the x-direction position of the first electrode 21P on the element main surface 20Ps of the first light emitting element 20P can be arbitrarily changed.
  • the first electrode 21P may be provided at the center of the element main surface 20Ps of the first light emitting element 20P in the x direction.
  • the connection portion WAX of the wire WA1 that is connected to the first electrode 21P is located in the center of the element main surface 20Ps in the x direction.
  • the connection portion WAY of the wire WA2 connected to the first electrode 21Q of the second light emitting element 20Q may be positioned at the center of the main surface 20Qs of the second light emitting element 20Q in the x direction.
  • the number of wires WA1 and WA2 can be changed arbitrarily.
  • the number of wires WA1 and WA2 may be one, or three or more.
  • the position of the x direction of the 1st electrode 21P of the 1st light emitting element 20P can be changed arbitrarily within the range of the protruding area
  • connection portion WAX of the wire WA1 connected to the first electrode 21P is provided at the center of the element main surface 20Ps in the x direction. Therefore, the wire WA1 is arranged at a position not overlapping with the light receiving surface 33P of the first light receiving element 30P when viewed from the z direction, that is, closer to the first resin side surface 81 than the light receiving surface 33P. According to this configuration, the same effects as those of the second embodiment can be obtained.
  • connection portion WAX of the wire WA1 is arranged in the first transparent resin 60P, but it is not limited to this.
  • the connection portion WAX may be arranged outside the first transparent resin 60P.
  • all of the wires WA1 are sealed with the sealing resin 80.
  • FIG. the portion of the element main surface 20Ps of the first light emitting element 20P where the first electrode 21P is provided may be covered with the sealing resin 80 .
  • the protruding region 20Pa of the first light emitting element 20P may be covered with the sealing resin 80. As shown in FIG.
  • the relative position in the x direction between the first light emitting element 20P and the first light receiving element 30P can be changed arbitrarily.
  • the first light-emitting element 20P is located closer to the center of the first light-receiving element 30P in the x-direction than the end of the first light-receiving element 30P that is closer to the first resin side surface 81 in the x-direction. You may arrange
  • the relative position in the x direction between the second light emitting element 20Q and the second light receiving element 30Q can be similarly changed.
  • the distance between the first light emitting element 20P and the first light receiving element 30P in the z direction can be arbitrarily changed.
  • the distance between the first light emitting element 20P and the first light receiving element 30P in the z direction may be greater than the thickness of the first light emitting element 20P (the length of the first light emitting element 20P in the z direction).
  • the distance between the first light emitting element 20P and the first light receiving element 30P in the z direction is greater than the thickness of the first light receiving element 30P (the length of the first light receiving element 30P in the z direction). good too.
  • a protrusion is provided at the end of the die pad portion 52DB of the second lead frame 50D in the x direction that is closer to the second resin side surface 82 (see FIG. 5).
  • 59DD may be provided.
  • the protrusion 59DD extends upward. More specifically, the protrusion 59DD is composed of a main metal layer 59DA and a plated layer 59DB.
  • the height dimension of the portion of the protrusion 59DD that is formed by the main metal layer 59DA is greater than the thickness of the plating layer 59DB.
  • the height dimension of the projection 59DD can be arbitrarily changed within the range where the effect of suppressing leakage of the conductive bonding material 100P to the x-direction side surface of the die pad portion 52DB can be obtained.
  • the arrangement position of the suspension lead 58D provided in the die pad portion 52DB of the second lead frame 50D can be arbitrarily changed.
  • the suspension lead 58D may extend in the y direction from the tip of the projection 57D of the die pad portion 52DB toward the third resin side surface 83.
  • the suspension lead 58D is exposed from the third resin side surface 83.
  • the first resin side surface 81 and the second resin side surface 82 correspond to the "terminal surface”
  • the third resin side surface 83 corresponds to the "hanging lead surface”.
  • the suspension lead 58D is not exposed from between the terminal 51A and the terminal 51B in the y direction on the second resin side surface 82, the creepage distance that affects the insulation is the terminal 51A on the second resin side surface 82. and terminal 51B.
  • At least one of the concave-convex portion 87 and the concave-convex portion 88 may be omitted from the sealing resin 80 .
  • at least one of the structure in which the sealing resin 80 is provided with the concave-convex portion 87 on the first resin side surface 81 and the structure in which the concave-convex portion 88 is provided on the second resin side surface 82 is used. In that case, the x-direction position of the first electrode 21P on the element main surface 20Ps of the first light emitting element 20P can be arbitrarily changed.
  • the first electrode 21P may be provided at the center of the element main surface 20Ps of the first light emitting element 20P in the x direction.
  • the connection portion WAX of the wire WA1 that is connected to the first electrode 21P is located in the center of the element main surface 20Ps in the x direction.
  • the connection portion WAY of the wire WA2 connected to the first electrode 21Q of the second light emitting element 20Q may be positioned at the center of the main surface 20Qs of the second light emitting element 20Q in the x direction.
  • the hanging lead 58D may be exposed on the third resin side surface 83 as in the modification of FIG.
  • the first resin side surface 81 and the second resin side surface 82 correspond to the "terminal surface”
  • the third resin side surface 83 corresponds to the "hanging lead surface”.
  • the first transparent resin 60P and the second transparent resin 60Q are both light from the first light emitting element 20P (light of the first wavelength) and light from the second light emitting element 20Q (light of the second wavelength). ) may be transmitted.
  • the first transparent resin 60P may contain inorganic particles 63 that absorb or reflect the light from the first light emitting element 20P.
  • both the light emitting side transparent resin 60PA and the light receiving side transparent resin 60PB of the first transparent resin 60P contain inorganic particles 63, as shown in FIG.
  • An example of the inorganic particles 63 is a filler. The inorganic particles 63 are arranged over the entire first transparent resin 60P.
  • the content of the inorganic particles 63 in the first transparent resin 60P can be arbitrarily changed.
  • the content of the inorganic particles 63 in the first transparent resin 60P is set, for example, so that the first light receiving element 30P can receive light from the first light emitting element 20P within a predetermined range.
  • the cross-sectional shape of the inorganic particles 63 may be elliptical or circular.
  • the inorganic particles 63 may include multiple types of inorganic particles having different cross-sectional shapes.
  • the inorganic particles 63 may include first inorganic particles having a first cross-sectional shape and second inorganic particles having a second cross-sectional shape different from the first cross-sectional shape.
  • the inorganic particles 63 may have the same size. Moreover, the inorganic particles 63 may include a plurality of types of inorganic particles having different sizes. In one example, inorganic particles 63 may include first inorganic particles having a first size and second inorganic particles having a second size different from the first size.
  • the inorganic particles 63 may contain multiple types of inorganic particles of different materials.
  • the inorganic particles 63 may include first inorganic particles made of a first material and second inorganic particles made of a second material different from the first material.
  • the inorganic particles 63 are composed of inorganic particles having the same size, the same cross-sectional shape, and the same material. Note that the inorganic particles 63 may include a plurality of types of inorganic particles having a combination of a plurality of cross-sectional shapes, a plurality of sizes, and a plurality of materials. The color of the inorganic particles 63 may be black, which mainly absorbs light, or white, which mainly reflects light.
  • At least one of the light-emitting side transparent resin 60PA and the light-receiving side transparent resin 60PB in the first transparent resin 60P should contain the inorganic particles 63. That is, the light-emitting side transparent resin 60PA of the first transparent resin 60P may contain inorganic particles, while the light-receiving side transparent resin 60PB may not contain inorganic particles. Further, the light receiving side transparent resin 60PB of the first transparent resin 60P may contain inorganic particles, while the light emitting side transparent resin 60PA may not contain inorganic particles. Similarly, the second transparent resin 60Q may contain inorganic particles that absorb or reflect the light from the second light emitting element 20Q.
  • the x-direction position of the first electrode 21P on the element main surface 20Ps of the first light emitting element 20P can be arbitrarily changed.
  • the first electrode 21P may be provided at the center of the element main surface 20Ps of the first light emitting element 20P in the x direction.
  • the connection portion WAX of the wire WA1 that is connected to the first electrode 21P is located in the center of the element main surface 20Ps in the x direction.
  • the connection portion WAY of the wire WA2 connected to the first electrode 21Q of the second light emitting element 20Q is similarly may be located in the center of the x direction.
  • the first plate member 70P may contain inorganic particles that absorb or reflect the light from the first light emitting element 20P.
  • the second plate member 70Q may contain inorganic particles that absorb or reflect the light from the second light emitting element 20Q.
  • the inorganic particles of the first plate member 70P and the inorganic particles of the second plate member 70Q may be the same as the inorganic particles 63 shown in FIG. 24, for example.
  • the x-direction position of the first electrode 21P on the element main surface 20Ps of the first light emitting element 20P can be arbitrarily changed.
  • the first electrode 21P may be provided at the center of the element main surface 20Ps of the first light emitting element 20P in the x direction.
  • the connection portion WAX of the wire WA1 that is connected to the first electrode 21P is located in the center of the element main surface 20Ps in the x direction.
  • the connection portion WAY of the wire WA2 connected to the first electrode 21Q of the second light emitting element 20Q similarly may be located in the center of the x direction.
  • both the first transparent resin 60P and the first plate member 70P may contain inorganic particles that absorb or reflect the light from the first light emitting element 20P.
  • Both the second transparent resin 60Q and the second plate member 70Q may contain inorganic particles that absorb or reflect the light from the second light emitting element 20Q.
  • the die pad portion 52DB on which the light receiving elements 30P and 30Q are mounted is separated from the second resin side surface 82 by the first It may be configured to incline toward the resin back surface 80 r as it goes toward the resin side surface 81 .
  • the direction of inclination of the die pad portion 52DB with respect to the direction (horizontal direction) perpendicular to the z-direction is the same as the direction of inclination with respect to the horizontal direction of the plate members 70P and 70Q.
  • the angle of inclination of the die pad portion 52DB with respect to the horizontal direction is smaller than the angle of inclination with respect to the horizontal direction of the plate members 70P and 70Q.
  • the inclination angle of the die pad portion 52DB with respect to the horizontal direction is, for example, 1° or more and 2° or less. Note that the inclination angle of the die pad portion 52DB with respect to the horizontal direction is not limited to this, and may be, for example, greater than 0° and equal to or less than 10°.
  • the inclination angles of the die pad portion 52DB with respect to the horizontal direction are 2° to 3°, 3° to 4°, 4° to 5°, 5° to 6°, 6° to 7°, and 7°. ° or more and 8° or less.
  • the die pad portion 52DB is inclined with respect to the horizontal direction, so that the height positions of the terminals 51A to 51D projecting from the second resin side surface 82 of the sealing resin 80 are set to a predetermined standard height.
  • Inorganic particles having a thickness can be enclosed in at least one of the transparent resins 60P and 60Q and the plate-like members 70P and 70Q. That is, by enclosing the inorganic particles in at least one of the transparent resins 60P and 60Q and the plate-like members 70P and 70Q, even if the volume of the member in which the inorganic particles are enclosed increases, the die pad portion 52DB is positioned horizontally. By inclining with respect to , space for the increase in volume can be secured.
  • both the die pad portion 42BB on which the first light emitting element 20P is mounted and the die pad portion 42CB on which the second light emitting element 20Q is mounted have a resin back surface 80r from the second resin side surface 82 toward the first resin side surface 81. It may be configured to incline toward. In other words, the die pad portions 42BB and 42CB may be configured to incline from the first resin side surface 81 toward the second resin side surface 82 toward the resin main surface 80s. In this manner, the die pad portions 42BB and 42CB are configured to incline in the same direction as the die pad portion 52DB.
  • the direction of inclination of the die pad portions 42BB and 42CB with respect to the direction (horizontal direction) perpendicular to the z-direction is the same as the direction of inclination with respect to the horizontal direction of the respective plate members 70P and 70Q.
  • the inclination angles of the die pad portions 42BB and 42CB with respect to the horizontal direction are smaller than the inclination angles of the plate members 70P and 70Q with respect to the horizontal direction.
  • the inclination angle of the die pad portions 42BB and 42CB with respect to the direction (horizontal direction) perpendicular to the z-direction is, for example, 1° or more and 2° or less.
  • the angle of inclination of the die pad portions 42BB and 42CB with respect to the horizontal direction is not limited to this, and may be, for example, greater than 0° and less than or equal to 10°.
  • the inclination angles of the die pad portions 42BB and 42CB with respect to the horizontal direction are 2° to 3°, 3° to 4°, 4° to 5°, 5° to 6°, 6° to 7°, and 7° or more and 8° or less.
  • the die pad portions 42BB and 42CB are inclined with respect to the horizontal direction, so that the height positions of the terminals 41A to 41D protruding from the first resin side surface 81 of the sealing resin 80 are set according to a predetermined standard.
  • thick inorganic particles can be enclosed in at least one of the transparent resins 60P and 60Q and the plate members 70P and 70Q.
  • the die pad portions 42BB and 42CB are By inclining with respect to the horizontal direction, a space for the increase in volume can be secured.
  • the wiring layers 38PA to 38PE may be provided in the first insulating portion 36PA.
  • the photoelectric conversion element 35PA has a region protruding from the wiring layers 38PA to 38PE when viewed in the z direction.
  • the photoelectric conversion element 35PA By adjusting the area of each of the wiring layers 38PA to 38PE provided on the photoelectric conversion element 35PA (hereinafter simply referred to as the area of each wiring layer 38PA to 38PE) when viewed from the z-direction, the photoelectric conversion element 35PA can be adjusted.
  • the amount of light received may be adjusted. That is, when designing the insulation module 10, the areas of the wiring layers 38PA to 38PE are set so that the amount of light received by the photoelectric conversion element 35PA is within a preset range. In one example, the area of each of the wiring layers 38PA to 38PE is set so that the proportion of light incident in the vertical direction on the photoelectric conversion element 35PA without being reflected in the z direction is 60% or more and 70% or less. be done.
  • the percentage of light entering the photoelectric conversion element 35PA in the vertical direction without reflection is not limited to 60% or more and 70% or less. 60% or more, 70% or more and 80% or less, 80% or more and 90% or less, or the like. In this way, the ratio of light entering the photoelectric conversion element 35PA in the vertical direction without being reflected can be appropriately adjusted by adjusting the wiring patterns of the wiring layers 38PA to 38PE according to the characteristics of the photoelectric conversion element 35PA. be done.
  • isolation module 10 may include a single photocoupler.
  • FIG. 25 is a schematic circuit diagram showing an example of the circuit configuration of the insulation module 10 having one photocoupler and the connection configuration between the insulation module 10 and the inverter circuit 500. As shown in FIG.
  • the insulation module 10 includes a light-emitting element and a light-receiving element configured to receive light from the light-emitting element.
  • the light emitting element has the same configuration as the first light emitting element 20P of the first embodiment, and the light receiving element has the same configuration as the first light receiving element 30P of the first embodiment.
  • the sealing structure of the light emitting element and the light receiving element is, for example, the first transparent resin 60P, the first plate-shaped member 70P, and the sealing resin 80 of the first embodiment. Similar to the encapsulation structure.
  • the inverter circuit 500 has a first switching element 501 and a second switching element 502 connected in series.
  • Each switching element 501, 502 is a transistor, for example.
  • transistors include MOSFETs and IGBTs. In this modified example, MOSFETs are used for the switching elements 501 and 502 .
  • the insulation module 10 applies a drive voltage signal to the gate of the first switching element 501 .
  • the insulation module 10 is a gate driver that drives the first switching element 501 .
  • the positive terminal of the control power supply 503 is electrically connected to the terminal 51A of the insulation module 10 .
  • a terminal 51D of the insulation module 10 is connected between the source of the first switching element 501 and the drain of the second switching element 502 .
  • the electrical configuration of the insulation module 10 is the same as the configuration in which the second light emitting diode 20AQ, the second light receiving diode 30AQ, and the second control circuit 130B are omitted from the insulation module 10 of the first embodiment, for example.
  • the insulation module 10 has a light-emitting diode 20R, a light-receiving diode 30R, and a control circuit 130.
  • the light emitting diode 20R has the same configuration as the first light emitting diode 20AP of the first embodiment
  • the light receiving diode 30R has the same configuration as the first light receiving diode 30AP of the first embodiment.
  • a first electrode 21R of the light-emitting diode 20R is electrically connected to the terminal 41A, and a second electrode 22R is electrically connected to the terminal 41B.
  • the light receiving diode 30R is electrically connected to the control circuit 130 and insulated from the light emitting diode 20R.
  • the first electrode 31R of the light receiving diode 30R is an anode electrode
  • the second electrode 32R is a cathode electrode. Both the first electrode 31R and the second electrode 32R are electrically connected to the control circuit 130 .
  • the control circuit 130 has a Schmitt trigger 131 and an output section 132, like the first control circuit 130A of the first embodiment.
  • the control circuit 130 generates a drive voltage signal based on the voltage change of the light receiving diode 30R caused by the light receiving diode 30R receiving the light from the light emitting diode 20R.
  • the Schmidt trigger 131 is electrically connected to both the first electrode 31R and the second electrode 32R of the light receiving diode 30R. Also, the Schmitt trigger 131 is electrically connected to the terminals 51A and 51D. That is, the Schmidt trigger 131 is powered by the control power supply 503 . The Schmitt trigger 131 transmits the voltage of the light receiving diode 30R to the output section 132 . A predetermined hysteresis is given to the threshold voltage of the Schmitt trigger 131 . With such a configuration, resistance to noise can be enhanced.
  • the output section 132 has a first switching element 132a and a second switching element 132b connected in series.
  • a p-type MOSFET is used for the first switching element 132a
  • an n-type MOSFET is used for the second switching element 132b.
  • the connection configuration of these switching elements 132a and 132b is the same as in the first embodiment.
  • Both the gate of the first switching element 132 a and the gate of the second switching element 132 b are electrically connected to the Schmidt trigger 131 . That is, the signal from the Schmitt trigger 131 is applied to both the gate of the first switching element 132a and the gate of the second switching element 132b.
  • the output unit 132 generates a drive voltage signal by complementarily turning on and off the first switching element 132a and the second switching element 132b based on the signal of the Schmitt trigger 131.
  • FIG. The output unit 132 applies the driving voltage signal to the gate of the first switching element 501 .
  • the insulation module 10 shown in FIG. 25 may have a driver and a current source as in the sixth embodiment.
  • a current source is provided between the terminal 41A and the first electrode 21R of the light emitting diode 20R.
  • a driver is provided, for example, to connect the terminal 41C and the current source. Thereby, the current supplied to the light emitting diode 20R is controlled according to the signal input to the terminal 41C.
  • the second driver 234B and the second current source 233B for driving the first light emitting diode 20AP and the second light emitting diode 20AQ are provided as in the sixth embodiment. and a first driver 234A and a first current source 233A to drive.
  • on as used in this disclosure includes the meanings of “on” and “above” unless the context clearly indicates otherwise.
  • the expression “A is formed on B” means that in the above embodiments A can be placed directly on B with A contacting B, but as a variant, A is formed on B without contacting B. It is intended that it can be placed above the That is, the term “on” does not exclude structures in which other members are formed between A and B.
  • references herein to "at least one of A and B” should be understood to mean “A only, or B only, or both A and B.”
  • Appendix Technical ideas that can be grasped from the present disclosure are described below. It should be noted that, for the purpose of understanding and not for the purpose of limitation, components described in the appendix are labeled with corresponding components in the embodiments. The reference numerals are provided as examples to aid understanding, and the components described in each appendix should not be limited to the components indicated by the reference numerals.
  • (Appendix A1) a light emitting element (20P) having a light emitting surface (20Ps) and a pad (21P) formed on the light emitting surface (20Ps); a light-receiving element (30P) having a light-receiving surface (33P) facing the light-emitting surface (20Ps) with a gap therebetween, and forming a photocoupler together with the light-emitting element (20P); Provided between the light-emitting surface (20Ps) and the light-receiving surface (33P), having translucency and insulation, and inclined with respect to both the light-emitting surface (20Ps) and the light-receiving surface (33P) a plate-like member (70P); a wire (WA1) connected to the pad (21P); The insulation module (10), wherein the pad (21P) is arranged in a portion of the light emitting surface (20Ps) that is located at a larger distance from the plate member (70P) than at the center.
  • the light emitting element (20Ps) has a rectangular shape having a longitudinal direction and a lateral direction when viewed from a direction perpendicular to the light emitting surface (20Ps),
  • the light emitting surface (20Ps) is spaced apart from the plate member (70P) as it goes from the first side to the second side in the longitudinal direction
  • the pad (21P) is arranged in the longitudinal direction at a portion of the light emitting surface (20Ps) where the distance from the plate-like member (70P) is larger than at the center,
  • a light emitting element (20P) having a light emitting surface (20Ps) and a pad (21P) formed on the light emitting surface (20Ps); a light-receiving element (30P) having a light-receiving surface (33P) facing the light-emitting surface (20Ps) with a gap therebetween, and forming a photocoupler together with the light-emitting element (20P); Provided between the light-emitting surface (20Ps) and the light-receiving surface (33P), having translucency and insulation, and inclined with respect to both the light-emitting surface (20Ps) and the light-receiving surface (33P) a plate-like member (70P); a wire (WA1) connected to the pad (21P);
  • the light emitting element (20P) has a rectangular shape having a longitudinal direction and a lateral direction when viewed from a direction perpendicular to the light emitting surface (20Ps), The light emitting surface (20Ps) is spaced
  • Appendix A4 Any one of Appendices A1 to A3, wherein the maximum distance between the light emitting surface (20Ps) and the plate member (70P) facing the light emitting surface (20Ps) is smaller than the thickness of the light emitting element (20P) 1.
  • a maximum distance (D1) between the light emitting surface (20Ps) and the plate member (70P) facing the light emitting surface (20Ps) is smaller than the thickness of the light receiving element (30P).
  • the isolation module according to any one of .
  • Appendix A6 The insulation module according to any one of Appendices A1 to A5, wherein the thickness of the light emitting element (20P) is thinner than the thickness of the light receiving element (30P).
  • Appendix A8 a transparent resin (60P) provided at least partially between the light emitting surface (20Ps) and the light receiving surface (33P); a light-shielding sealing resin (80) covering the light-emitting element (20P), the light-receiving element (30P), and the plate-shaped member (70P) together with the transparent resin (60P);
  • the transparent resin (60P) includes a light emitting side transparent resin (60PA) provided between the plate member (70P) and the light emitting element (20P), the plate member (70P) and the light receiving element ( 30P) and a light-receiving side transparent resin (60PB) provided between,
  • the center of curvature (CD) of the side surface (62B) of the light receiving side transparent resin (60PB) is located on the side opposite to the plate-like member (70P) with respect to the side surface (62B) of the light receiving side transparent resin (60PB).
  • the insulation module of Appendix A8 that is curved to.
  • the center of curvature (CB) of the side surface (62A) of the light emitting side transparent resin (60PA) is located on the opposite side of the side surface (62A) of the light emitting side transparent resin (60PA) from the plate member (70P).
  • the insulation module of Appendix A9 which is curved to .
  • the sealing resin (80) has a resin side surface (81/82) on which a plurality of terminals (41A to 41D/51A to 51D) are arranged, Concavo-convex portions (87/88) are provided in portions between first terminals and second terminals of the plurality of terminals (41A to 41D/51A to 51D) on the resin side surface (81/82).
  • the insulation module according to any one of A8-A11.
  • the lead frame (50D) has hanging leads (58D) extending from the die pad (52DB),
  • the suspension lead (58D) is exposed from the resin side surface (82), In the resin side surface (83), in the portion between the suspension lead (58D) as the first terminal and the terminals (51A, 51B) adjacent to the suspension lead (58D) as the second terminal,
  • the light receiving element (30P) is a photoelectric conversion element (35PA); a control circuit (35PB) that receives a signal from the photoelectric conversion element (35PA); An insulating layer (36P) laminated on the photoelectric conversion element (35PA) and the control circuit (35PB),
  • the insulating layer (36P) is a first insulating portion (36PA) formed on the photoelectric conversion element (35PA); a second insulating portion (36PB) formed on the control circuit (35PB); At least one first wiring layer is formed in the second insulating portion (36PB),
  • the insulation module according to any one of Appendices A1 to A14, wherein at least one layer in which no wiring layer is formed is provided in the first insulation portion (36PA).
  • the light receiving element (30P) is a photoelectric conversion element (35PA); a control circuit (35PB) that receives a signal from the photoelectric conversion element (35PA); An insulating layer (36P) laminated on the photoelectric conversion element (35PA) and the control circuit (35PB),
  • the insulating layer (36P) is a first insulating portion (36PA) formed on the photoelectric conversion element (35PA); a second insulating portion (36PB) formed on the control circuit (35PB); A plurality of first wiring layers are formed in the second insulating portion (36PB),
  • the insulation module according to any one of Appendices A1 to A14, wherein the first insulation portion (36PA) has a smaller number of second wiring layers than the second insulation portion (36PB).
  • the light receiving element (30P) is a photoelectric conversion element (35PA); A control circuit (35PB) that receives a signal from the photoelectric conversion element (35PA), When the light-receiving element (30P) receives a signal composed of a plurality of pulses from the light-emitting element (20P), the control circuit (35PB) controls a portion of the plurality of pulses excluding the first pulse.
  • the isolation module according to any one of clauses A1-A14, configured to output an output signal based on the
  • the light receiving element includes a first light receiving element (30P) and a second light receiving element (30Q)
  • the light emitting element includes a first light emitting element (20P) and a second light emitting element (20Q)
  • a first photocoupler is composed of the first light emitting element (20P) and the first light receiving element (30P)
  • a second photocoupler is composed of the second light emitting element (20Q) and the second light receiving element (30Q)
  • the insulation module (10) comprises: a first transparent resin (60P) covering the first light emitting element (20P) and the first light receiving element (30P); a second transparent resin (60Q) covering the second light emitting element (20Q) and the second light receiving element (30Q);
  • a sealing resin (80) that seals both the first transparent resin (60P) and the second transparent resin (60Q),
  • the sealing resin (80) has a separation wall (89) separating the first transparent resin (60P) and the second transparent resin (60Q). isolation module.
  • the light receiving element includes a first light receiving element (30P) and a second light receiving element (30Q)
  • the light emitting element includes a first light emitting element (20P) and a second light emitting element (20Q)
  • a first photocoupler is composed of the first light emitting element (20P) and the first light receiving element (30P)
  • a second photocoupler is composed of the second light emitting element (20Q) and the second light receiving element (30Q)
  • the insulation module (10) comprises: a first transparent resin (60P) covering the first light emitting element (20P) and the first light receiving element (30P);
  • the first light emitting element (20P) is an element that emits light of a first wavelength
  • the second light emitting element (20Q) is an element that emits light of a second wavelength different from the first wavelength
  • the first transparent resin (60P) is made of a resin material that transmits the light of the first wavelength and does not
  • the plate member is a first plate member (70P) interposed between the first light emitting element (20P) and the first light receiving element (30P); A second plate member (70Q) interposed between the second light emitting element (20Q) and the second light receiving element (30Q).
  • the insulation module according to Appendix A18 or A19.
  • Appendix B1 a light emitting element (20P) having a light emitting surface (20Ps); Having a light receiving surface (33P) facing the light emitting surface (20Ps) with a gap, and comprising the light emitting element (20P) and a light receiving element (30P) constituting a photocoupler,
  • the light receiving element (30P) has an element main surface (30Ps) including the light receiving surface (33P),
  • the insulation module according to appendix B1 wherein the infrared cut layer (200) constitutes the element main surface (30Ps).
  • the light receiving element (30P) is a photoelectric conversion element (35PA); a control circuit (35PB) that receives a signal from the photoelectric conversion element (35PA); An insulating layer (36P) laminated on the photoelectric conversion element (35PA) and the control circuit (35PB), The insulation module according to appendix B1 or B2, wherein the infrared cut layer (200) is laminated on the insulation layer (36P).
  • Appendix B4 The insulation module according to appendix B3, wherein the insulation layer (36P) is made of a material that transmits infrared rays.
  • Appendix B5 The insulation module according to any one of Appendices B1 to B4, wherein the infrared cut layer (200) is made of a resin material.
  • the transparent resin (60P) includes a light emitting side transparent resin (60PA) provided between the plate member (70P) and the light emitting element (20P), the plate member (70P) and the light receiving element ( 30P) and a light-receiving side transparent resin (60PB) provided between,
  • the transparent resin (60P) includes a light emitting side transparent resin (60PA) provided between the plate member (70P) and the light emitting element (20P), the plate member (70P) and the light receiving element ( 30P) and a light-receiving side transparent resin (60PB) provided between,
  • Appendix B9 a first die pad (42BB) on which the light emitting element (20P) is mounted; a second die pad (52DB) on which the light receiving element (30P) is mounted; A seal for sealing the transparent resin (60P), the plate member (70P), the first die pad (42BB), the second die pad (52DB), the light emitting element (20P), and the light receiving element (30P) and a stopping resin (80),
  • the second die pad (52DB) is inclined in the same direction as the inclination direction of the plate member (70P) with respect to a horizontal direction orthogonal to the thickness direction (z direction) of the sealing resin (80).
  • Appendix B10 The insulation module according to Appendix B9, wherein the inclination angle of the second die pad (52DB) with respect to the horizontal direction is smaller than the inclination angle of the plate member (70P) with respect to the horizontal direction.
  • Appendix B11 a first die pad (42BB) on which the light emitting element (20P) is mounted; a second die pad (52DB) on which the light receiving element (30P) is mounted; A seal for sealing the transparent resin (60P), the plate member (70P), the first die pad (42BB), the second die pad (52DB), the light emitting element (20P), and the light receiving element (30P) and a stopping resin (80),
  • the first die pad (42BB) is inclined in the same direction as the plate member (70P) with respect to a horizontal direction orthogonal to the thickness direction (z direction) of the sealing resin (80).
  • the isolation module of any one of Appendixes B6-B10 configured to:
  • the light receiving element (30P) is a photoelectric conversion element (35PA); a control circuit (35PB) that receives a signal from the photoelectric conversion element (35PA); An insulating layer (36P) laminated on the photoelectric conversion element (35PA) and the control circuit (35PB),
  • the insulating layer (36P) is a first insulating portion (36PA) formed on the photoelectric conversion element (35PA); a second insulating portion (36PB) formed on the control circuit (35PB); At least one first wiring layer is formed in the second insulating portion (36PB),
  • An insulation module, wherein at least one layer in which no wiring layer is formed is provided in the first insulation part (36PA).
  • the light receiving element (30P) is a photoelectric conversion element (35PA); a control circuit (35PB) that receives a signal from the photoelectric conversion element (35PA); An insulating layer (36P) laminated on the photoelectric conversion element (35PA) and the control circuit (35PB),
  • the insulating layer (36P) is a first insulating portion (36PA) formed on the photoelectric conversion element (35PA); a second insulating portion (36PB) formed on the control circuit (35PB); A plurality of first wiring layers are formed in the second insulating portion (36PB),
  • the light receiving element (30P) is a photoelectric conversion element (35PA); A control circuit (35PB) that receives a signal from the photoelectric conversion element (35PA), When the light-receiving element (30P) receives a signal composed of a plurality of pulses from the light-emitting element (20P), the control circuit (35PB) controls a portion of the plurality of pulses excluding the first pulse.
  • an isolation module configured to output an output signal based on
  • Appendix C4 The insulation module according to any one of Appendices C1 to C3, wherein the light receiving surface (33P) is provided with an infrared cut layer (200) for selectively cutting infrared rays.
  • the light receiving element (30P) has an element main surface (30Ps) including the light receiving surface (33P),
  • Appendix C6 The insulation module according to appendix C4 or C5, wherein the insulation layer (36P) is made of a material that transmits infrared rays.
  • Appendix C7 The insulation module according to any one of Appendices C4 to C6, wherein the infrared cut layer (200) is made of a resin material.
  • (Appendix D1) a light emitting element (20P) having a light emitting surface (20Ps); a light-receiving element (30P) having a light-receiving surface (33P) facing the light-emitting surface (20Ps) with a gap therebetween, and forming a photocoupler together with the light-emitting element (20P); a transparent resin (60P) provided at least partially between the light emitting surface (20Ps) and the light receiving surface (33P); A light-shielding sealing resin (80) covering the light emitting element (20P) and the light receiving element (30P) together with the transparent resin (60P), The sealing resin (80) covers the side surface of the light receiving element (20P).
  • An insulation module a light emitting element (20P) having a light emitting surface (20Ps); a light-receiving element (30P) having a light-receiving surface (33P) facing the light-emitting surface (20Ps) with a gap therebetween, and forming a photo
  • the transparent resin (60P) includes a light emitting side transparent resin (60PA) provided between the plate member (70P) and the light emitting element (20P), the plate member (70P) and the light receiving element ( 30P) and a light-receiving side transparent resin (60PB) provided between,
  • the center of curvature (CD) of the side surface (62B) of the light receiving side transparent resin (60PB) is located on the side opposite to the plate-like member (70P) with respect to the side surface (62B) of the light receiving side transparent resin (60PB).
  • the insulation module of appendix D1 which is curved to.
  • the lead frame (50D) has suspension leads (58D) extending from the die pad,
  • the suspension lead (58D) is exposed from the resin side surface (82),
  • the above-mentioned Insulation module according to Appendix E1 provided with undulations (88).
  • Appendix F1 a light emitting element (20P) having a light emitting surface (20Ps) and a pad (21P) formed on the light emitting surface (20Ps); Having a light receiving surface (33P) facing the light emitting surface (20Ps) with a gap, and comprising the light emitting element (20P) and a light receiving element (30P) constituting a photocoupler, A distance (DG) between the light emitting surface (20Ps) and the light receiving surface (33P) is smaller than the thickness of the light receiving element (30P).
  • Appendix F2 The insulation module according to appendix F1, wherein the distance (DG) between the light emitting surface (20Ps) and the light receiving surface (33P) is smaller than the thickness of the light emitting element (20P).
  • Appendix F3 The insulation module according to appendix F1 or F2, wherein the thickness of the light emitting element (20P) is thinner than the thickness of the light receiving element (30P).
  • (Appendix G1) a first light emitting element (20P) having a first light emitting surface (20Ps); a second light emitting element (20Q) having a second light emitting surface (20Qs); a first light-receiving element (30P) having a first light-receiving surface (33P) facing the first light-emitting surface (20Ps) with a gap therebetween, and constituting the first light-emitting element (20P) and a first photocoupler; , a second light-receiving element (30Q) having a second light-receiving surface (33Q) facing the second light-emitting surface (20Qs) with a gap therebetween, and constituting the second light-emitting element (20Q) and a second photocoupler; , a first transparent resin (60P) covering at least both the first light emitting element (20P) and the first light receiving element (30P); a second transparent resin (60Q) covering at least both the second light emitting element (20Q) and the second light receiving element (30
  • (Appendix G3) a first light emitting element (20P) having a first light emitting surface (20Ps); a second light emitting element (20Q) having a second light emitting surface (20Qs); a first light-receiving element (30P) having a first light-receiving surface (33P) facing the first light-emitting surface (20Ps) with a gap therebetween, and constituting the first light-emitting element (20P) and a first photocoupler; , a second light-receiving element (30Q) having a second light-receiving surface (33Q) facing the second light-emitting surface (20Qs) with a gap therebetween, and constituting the second light-emitting element (20Q) and a second photocoupler; , a first transparent resin (60P) covering at least both the first light emitting element (20P) and the first light receiving element (30P); a second transparent resin (60Q) covering at least both the second light emitting element (20Q) and the second light receiving element (30
  • Appendix G4 The insulation module according to Appendix G3, which seals the first transparent resin (60P) and the second transparent resin (60Q), and includes a sealing resin (80) made of a light-shielding material. .
  • Second extension part 42CB Die pad part (first die pad) 43C... Protrusion 42DB... Wire connection part 50, 50A to 50D... Second lead frame 50E... Relay frame 51A to 51D... Terminal 52A to 52D... Inner lead 52AA... Narrow part 52Aa, 52Ba, 52Ca, 52Da... First part 52Ab , 52Bb, 52Cb, 52Db... Second part 52Ac, 52Bc, 52Cc, 52Dc... Bending part 52BA, 52DA... Lead part 52BB, 52CB... Wire connection part 52CA... Lead part 52DB...

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
PCT/JP2022/023701 2021-06-14 2022-06-14 絶縁モジュール Ceased WO2022264981A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE112022003052.6T DE112022003052T5 (de) 2021-06-14 2022-06-14 Isolationsmodul
JP2023529872A JPWO2022264981A1 (https=) 2021-06-14 2022-06-14
CN202280041897.5A CN117480622A (zh) 2021-06-14 2022-06-14 绝缘模块
US18/537,324 US20240113093A1 (en) 2021-06-14 2023-12-12 Insulation module

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-098853 2021-06-14
JP2021098853 2021-06-14

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US18/537,324 Continuation US20240113093A1 (en) 2021-06-14 2023-12-12 Insulation module

Publications (1)

Publication Number Publication Date
WO2022264981A1 true WO2022264981A1 (ja) 2022-12-22

Family

ID=84526491

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2022/023701 Ceased WO2022264981A1 (ja) 2021-06-14 2022-06-14 絶縁モジュール

Country Status (5)

Country Link
US (1) US20240113093A1 (https=)
JP (1) JPWO2022264981A1 (https=)
CN (1) CN117480622A (https=)
DE (1) DE112022003052T5 (https=)
WO (1) WO2022264981A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7582156B2 (ja) * 2021-10-27 2024-11-13 三菱電機株式会社 半導体装置及びその製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10163518A (ja) * 1996-11-29 1998-06-19 Sharp Corp 複数型光結合素子及びその製造方法
JP2010153816A (ja) * 2008-11-21 2010-07-08 Renesas Electronics Corp フォトカプラおよびその組立方法
JP2012222224A (ja) * 2011-04-12 2012-11-12 Sharp Corp 光結合装置
JP2013065717A (ja) * 2011-09-16 2013-04-11 Toshiba Corp 半導体装置およびその製造方法
US20140117383A1 (en) * 2012-10-30 2014-05-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Optocoupler Having Lens Layer
JP2014135473A (ja) * 2012-12-11 2014-07-24 Renesas Electronics Corp 光結合素子
JP2015056590A (ja) * 2013-09-13 2015-03-23 株式会社東芝 受光素子および光結合型信号絶縁装置
JP2019012713A (ja) * 2017-06-29 2019-01-24 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9000675B2 (en) 2010-09-21 2015-04-07 Avago Technologies General Ip (Singapore) Pte. Ltd. Transmitting and receiving digital and analog signals across an isolator

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10163518A (ja) * 1996-11-29 1998-06-19 Sharp Corp 複数型光結合素子及びその製造方法
JP2010153816A (ja) * 2008-11-21 2010-07-08 Renesas Electronics Corp フォトカプラおよびその組立方法
JP2012222224A (ja) * 2011-04-12 2012-11-12 Sharp Corp 光結合装置
JP2013065717A (ja) * 2011-09-16 2013-04-11 Toshiba Corp 半導体装置およびその製造方法
US20140117383A1 (en) * 2012-10-30 2014-05-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Optocoupler Having Lens Layer
JP2014135473A (ja) * 2012-12-11 2014-07-24 Renesas Electronics Corp 光結合素子
JP2015056590A (ja) * 2013-09-13 2015-03-23 株式会社東芝 受光素子および光結合型信号絶縁装置
JP2019012713A (ja) * 2017-06-29 2019-01-24 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
US20240113093A1 (en) 2024-04-04
DE112022003052T5 (de) 2024-04-04
JPWO2022264981A1 (https=) 2022-12-22
CN117480622A (zh) 2024-01-30

Similar Documents

Publication Publication Date Title
TWI469279B (zh) 半導體封裝
US9698128B2 (en) LED module and LED module mounting structure
CN102160197B (zh) 光电元件封装基座
US9613935B2 (en) LED module
JP5933959B2 (ja) 半導体光学装置
TW202118093A (zh) 發光模組及其製造方法
US7235804B2 (en) Method for manufacturing optocoupler
JP7240148B2 (ja) 光結合装置
TW201238104A (en) Light emitting diode package
US20100193803A1 (en) Stacked Micro Optocouplers and Methods of Making the Same
JP2017034127A (ja) 光結合装置
US20230420909A1 (en) Semiconductor light-emitting device
WO2022264981A1 (ja) 絶縁モジュール
JP3725453B2 (ja) 半導体装置
CN104576883B (zh) 芯片安装用阵列基板及其制造方法
JP7652638B2 (ja) 半導体装置、その製造方法および基板
CN202977376U (zh) 传感器封装模块
CN102832315A (zh) 发光二极管覆晶封装结构
TW201445771A (zh) 發光二極體封裝結構
WO2022264982A1 (ja) 絶縁モジュール
US20240113238A1 (en) Insulation module
US20140084306A1 (en) Semiconductor device
US8674376B2 (en) LED package structure
JP3710522B2 (ja) 光半導体装置およびその製造方法
TW200822316A (en) Electronic assembly and circuit board

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22824970

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2023529872

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 202280041897.5

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 112022003052

Country of ref document: DE

122 Ep: pct application non-entry in european phase

Ref document number: 22824970

Country of ref document: EP

Kind code of ref document: A1