WO2022264893A1 - Corps laser à semi-conducteur, élément laser à semi-conducteur, substrat de laser à semi-conducteur, appareil électronique, et procédé et dispositif de fabrication de dispositif laser à semi-conducteur - Google Patents

Corps laser à semi-conducteur, élément laser à semi-conducteur, substrat de laser à semi-conducteur, appareil électronique, et procédé et dispositif de fabrication de dispositif laser à semi-conducteur Download PDF

Info

Publication number
WO2022264893A1
WO2022264893A1 PCT/JP2022/023089 JP2022023089W WO2022264893A1 WO 2022264893 A1 WO2022264893 A1 WO 2022264893A1 JP 2022023089 W JP2022023089 W JP 2022023089W WO 2022264893 A1 WO2022264893 A1 WO 2022264893A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor laser
semiconductor
layer
pair
facets
Prior art date
Application number
PCT/JP2022/023089
Other languages
English (en)
Japanese (ja)
Inventor
賢太郎 村川
剛 神川
佳伸 川口
Original Assignee
京セラ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京セラ株式会社 filed Critical 京セラ株式会社
Priority to JP2023529813A priority Critical patent/JPWO2022264893A1/ja
Priority to EP22824885.2A priority patent/EP4358323A1/fr
Priority to US18/570,851 priority patent/US20240283219A1/en
Publication of WO2022264893A1 publication Critical patent/WO2022264893A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1042—Optical microcavities, e.g. cavity dimensions comparable to the wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Definitions

  • the present disclosure relates to semiconductor lasers and the like.
  • Patent Document 1 discloses a semiconductor laser chip including an optical resonator.
  • a semiconductor laser body includes a base semiconductor portion, and a compound semiconductor portion located on the base semiconductor portion and containing a GaN-based semiconductor, the base semiconductor portion including a first portion and a second portion having a lower density of elongated threading dislocations than the first portion, the compound semiconductor portion having an optical resonator including a pair of resonant facets, at least one of the pair of resonant facets comprising:
  • the compound semiconductor portion is an m-plane or a c-plane, and the resonance length, which is the distance between the pair of resonance end faces, is 200 [ ⁇ m] or less.
  • FIG. 1 is a perspective view showing the configuration of a semiconductor laser body according to an embodiment
  • FIG. 1 is a perspective view showing the configuration of an optical resonator
  • FIG. 3 is a plan view showing the configuration of a compound semiconductor section
  • FIG. 3 is a plan view showing the configuration of a compound semiconductor section
  • FIG. 4 is a perspective view showing another configuration of the semiconductor laser body according to the present embodiment
  • 1 is a schematic diagram showing the configuration of a semiconductor laser device according to an embodiment
  • FIG. 4 is a flow chart showing an example of a method for manufacturing a semiconductor laser device according to this embodiment.
  • 1 is a block diagram showing an example of a semiconductor laser body manufacturing apparatus according to an embodiment
  • FIG. 1 is a perspective view showing the configuration of a semiconductor laser body according to Example 1
  • FIG. 3 is a plan view showing the structure of a device layer;
  • FIG. 1 is a cross-sectional view showing the configuration of a semiconductor laser body according to Example 1;
  • FIG. 1 is a cross-sectional view showing the configuration of a semiconductor laser device according to Example 1;
  • FIG. 1 is a perspective view showing the configuration of a semiconductor laser device according to Example 1.
  • FIG. 4 is a cross-sectional view showing another configuration of the semiconductor laser device according to Example 1.
  • FIG. 4 is a cross-sectional view showing another configuration of the semiconductor laser device according to Example 1.
  • FIG. 4 is a cross-sectional view showing another configuration of the semiconductor laser device according to Example 1.
  • FIG. 1 is a perspective view showing a configuration of a semiconductor laser substrate (semiconductor laser array) according to Example 1;
  • FIG. 4 is a perspective view showing another configuration of the semiconductor laser substrate according to Example 1.
  • FIG. 4 is a flow chart showing an example of a method for manufacturing a semiconductor laser device according to Example 1;
  • FIG. 20 is a schematic cross-sectional view showing a method of manufacturing the semiconductor laser device of FIG. 19;
  • FIG. 5 is a schematic cross-sectional view showing another example of the method for manufacturing the semiconductor laser device according to Example 1;
  • FIG. 5 is a schematic cross-sectional view showing another example of the method for manufacturing the semiconductor laser device according to Example 1;
  • 4 is a cross-sectional view showing an example of lateral growth of an ELO semiconductor layer in Example 1.
  • FIG. 5 is a flow chart showing another example of the method for manufacturing the semiconductor laser device according to the first embodiment;
  • FIG. 5 is a flow chart showing another example of the method for manufacturing the semiconductor laser device according to the first embodiment;
  • FIG. 25 is a schematic diagram showing a method of manufacturing the semiconductor laser device of FIG. 24; 5 is a flow chart showing another example of the method for manufacturing the semiconductor laser device according to the first embodiment;
  • FIG. 27 is a schematic diagram showing a method of manufacturing the semiconductor laser device of FIG. 26; 5 is a flow chart showing another example of the method for manufacturing the semiconductor laser device according to the first embodiment;
  • FIG. 29 is a schematic diagram showing a method of manufacturing the semiconductor laser device of FIG. 28;
  • FIG. 10 is a perspective view showing the configuration of a semiconductor laser body according to Example 2;
  • FIG. 5 is a cross-sectional view showing the configuration of a semiconductor laser body according to Example 2;
  • FIG. 1 is a perspective view showing the configuration of a semiconductor laser body according to this embodiment.
  • FIG. 2 is a perspective view showing the configuration of an optical resonator.
  • 3 and 4 are plan views showing the configuration of the compound semiconductor portion.
  • FIG. 5 is a perspective view showing another configuration of the semiconductor laser body according to this embodiment.
  • a semiconductor laser body 21 according to the present embodiment includes a base semiconductor portion 8 and a compound semiconductor located on the base semiconductor portion 8 and containing a nitride semiconductor (for example, a GaN-based semiconductor). a part 9;
  • the base semiconductor portion 8 may be a base semiconductor layer, and the compound semiconductor portion 9 may be a compound semiconductor layer.
  • the base semiconductor portion 8 includes a first portion B1 and a second portion B2 in which the density of threading dislocations (threading dislocation density) extending in the thickness direction (Z direction) is lower than that of the first portion B1.
  • the compound semiconductor portion 9 has an optical resonator LK including a pair of resonance facets F1 and F2.
  • At least one of the pair of resonance facets F1 and F2 is the m-plane or the c-plane of the compound semiconductor portion 9 containing a nitride semiconductor, and the pair of resonance facets (resonator facets) F1 and F2
  • a configuration in which the resonance length (resonator length) L1 is 200 [ ⁇ m] or less can be employed.
  • the pair of resonance facets F1 and F2 may be the m-planes of the compound semiconductor portion 9, and the pair of resonance facets F1 and F2 may be the c-planes of the compound semiconductor portion 9, respectively.
  • the m-plane is a plane parallel to the (1-100) plane of the nitride semiconductor
  • the c-plane is a plane parallel to the (0001) plane of the nitride semiconductor.
  • the semiconductor laser body 21 can be configured such that at least one of the pair of resonance facets F1 and F2 is included in the cleavage plane of the compound semiconductor portion 9 and the resonance length L1 is 200 [ ⁇ m] or less. Each of the pair of resonance facets F1 and F2 may be included in the cleavage plane of the compound semiconductor portion 9 .
  • the semiconductor laser body 21 can be configured such that at least one of the pair of resonance facets F1 and F2 has an optical reflectance of 98% or more and a resonance length L1 of 200 [ ⁇ m] or less.
  • the light reflectance of each of the pair of resonance facets F1 and F2 may be 98% or more, and as shown in FIG. good too.
  • the resonance facets F1 and F2 since at least one of the resonance facets F1 and F2 has a high optical reflectance and a small reflection loss, stable laser oscillation is possible even at a short resonance length of 200 ⁇ m or less where the optical gain is small.
  • the base semiconductor portion 8 and the compound semiconductor portion 9 contain, for example, a nitride semiconductor.
  • a GaN-based semiconductor is a semiconductor containing gallium atoms (Ga) and nitrogen atoms (N), and typical examples include GaN, AlGaN, AlGaInN, and InGaN.
  • the base semiconductor portion 8 may be of a doped type (for example, n-type containing donors) or non-doped type.
  • the base semiconductor portion 8 containing a nitride semiconductor can be formed by an ELO (Epitaxial Lateral Overgrowth) method.
  • the semiconductor layer formed by the ELO method may be referred to as an ELO semiconductor layer.
  • a base semiconductor portion 8 is laterally grown on a template substrate having a mask portion (described later). In this way, a low-defect portion (second portion B2) having a low threading dislocation density can be formed on the mask portion.
  • the compound semiconductor portion 9 Since the number of dislocations (defects) taken over by the compound semiconductor portion 9 (for example, the GaN-based semiconductor layer) on the second portion B2 is reduced, the compound semiconductor portion 9 has excellent planarity and perpendicularity to the c-plane, and has high light reflection. It is possible to form the resonant end faces F1 and F2 of the ratio.
  • the semiconductor laser body 21 may be provided with a first electrode E1 and a second electrode E2 for supplying current to the optical resonator LK.
  • the first electrode E1 can be arranged so as to overlap the optical resonator LK in plan view in the thickness direction of the base semiconductor portion 8 .
  • "two members overlap” means that at least a part of one member overlaps another member in a plan view (including a transparent plan view) in the thickness direction of each member. , these members may or may not be in contact.
  • the first and second electrodes E1 and E2 are provided on the same side with respect to the base semiconductor portion 8, and the first and second electrodes E1 and E2 do not overlap in plan view, but this configuration (single-sided electrodes) is limited. not.
  • the first and second electrodes E1 and E2 may be provided on different sides with respect to the base semiconductor portion 8, and the first and second electrodes E1 and E2 may overlap in plan view (double-sided electrodes).
  • FIG. 6 is a schematic diagram showing the configuration of the semiconductor laser device according to this embodiment.
  • the semiconductor laser device 23 according to this embodiment includes one or more semiconductor laser bodies 21 and a support ST on which the one or more semiconductor laser bodies 21 are mounted.
  • the semiconductor laser substrate 22 according to this embodiment includes a plurality of semiconductor laser bodies 21 and a support substrate SK on which the plurality of semiconductor laser bodies 21 are mounted.
  • the semiconductor laser body 21, a semiconductor laser element 22, a semiconductor laser substrate (semiconductor laser array) 23, and a semiconductor laser module described later are collectively referred to as a semiconductor laser device.
  • FIG. 7 is a flow chart showing an example of a method for manufacturing a semiconductor laser device according to this embodiment.
  • the step of preparing the template substrate (ELO growth substrate) 7 the step of forming the first semiconductor layer, which is the source of the base semiconductor portion 8, using the ELO method is performed.
  • a step of forming a second semiconductor layer, which is the base of the compound semiconductor portion 9, and a step of forming a pair of resonance facets F1 and F2 in the second semiconductor layer are performed.
  • FIG. 8 is a block diagram showing an example of a semiconductor laser body manufacturing apparatus according to this embodiment.
  • a semiconductor laser body manufacturing apparatus 70 shown in FIG. A processing unit 73 and a control unit (controller) 74 that controls the semiconductor layer forming unit 72 and the semiconductor layer processing unit 73 are provided.
  • the semiconductor layer forming section 72 may include a MOCVD (Metal Organic Chemical Vapor Deposition) device, and the control section 74 may include a processor and memory.
  • the control unit 74 may be configured to control the semiconductor layer forming unit 72 and the semiconductor layer processing unit 73 by executing a program stored in an internal memory, a communicable communication device, or an accessible network.
  • the above program and a recording medium storing the above program are also included in this embodiment.
  • FIG. 9 is a perspective view showing the configuration of the semiconductor laser body according to Example 1.
  • FIG. 10 is a plan view showing the structure of the device layer.
  • FIG. 11 is a cross-sectional view showing the configuration of the semiconductor laser body according to Example 1.
  • the semiconductor laser body 21 according to Example 1 includes a base semiconductor portion 8, a compound semiconductor portion 9 positioned on the base semiconductor portion 8, a first electrode E1 as an anode, and a second electrode E2 that is a cathode.
  • the semiconductor laser body 21 can also be called a semiconductor laser chip.
  • the base semiconductor portion 8 and the compound semiconductor portion 9 are nitride semiconductor layers (eg, GaN-based semiconductor layers), and the base semiconductor portion 8 is an n-type semiconductor layer having donors. 9 and the like, the ⁇ 11-20> direction of the base semiconductor portion 8 is the X direction, the ⁇ 1-100> direction is the Y direction, and the ⁇ 0001> direction is the Z direction (thickness direction).
  • the base semiconductor part 8 is a self-supporting layer with no support material.
  • the base semiconductor portion 8 includes a first portion B1 including threading dislocations KD extending in the Z direction, and a second portion B2 and a third portion B3 having a lower threading dislocation density than the first portion B1.
  • the second portion B2, the first portion B and the third portion B3 are arranged in this order in the X direction, and the first portion B1 is positioned between the second portion B2 and the third portion B3.
  • the first portion B1 is a portion located above the opening of the mask layer 6 when the base semiconductor portion 8 was formed by the ELO method (described later).
  • the first portion B1 may be a dislocation succession portion.
  • the threading dislocation densities of the second portion B2 and the third portion B3 are 1 ⁇ 5 or less (for example, 5 ⁇ 10 6 /cm 2 or less) of the threading dislocation density of the first portion B1. Since the base semiconductor portion 8 is a self-supporting layer, in the semiconductor laser body 21, the back surface (eg, -c plane) of the base semiconductor portion 8 may be exposed.
  • the compound semiconductor portion 9 is formed by sequentially forming an n-type semiconductor layer 9N having donors, an active layer 9K, and a p-type semiconductor layer 9P having acceptors.
  • the n-type semiconductor layer 9N is formed by forming a first contact layer 9A, a first clad layer 9B, and a first optical guide layer 9C in this order.
  • the p-type semiconductor layer 9P may be formed by forming a second optical guide layer 9D, an electron blocking layer 9E, a second cladding layer 9F, and a second contact layer 9G in this order.
  • a first electrode E1 (anode) may be formed on the second contact layer 9G.
  • the second electrode E2 may be provided on the same side of the base semiconductor portion 8 as the first electrode E1.
  • the second electrode E2 is in contact with the base semiconductor portion 8, and the first and second electrodes E1 and E2 do not overlap in plan view.
  • the base semiconductor portion 8 may have a larger width in the X direction than the compound semiconductor portion 9, and the second electrode E2 may be formed in an exposed portion where the compound semiconductor portion 9 is not formed.
  • a part of the compound semiconductor portion 9 may be dug by etching or the like to expose the base semiconductor portion 8 , and the second electrode E2 may be provided so as to be in contact with the base semiconductor portion 8 .
  • the first contact layer 9A in the compound semiconductor portion 9 may be exposed by etching a portion of the compound semiconductor portion 9, and the second electrode E2 may be provided so as to be in contact with the first contact layer 9A. good.
  • the compound semiconductor portion 9 has an optical resonator LK including a pair of resonance facets F1 and F2, and a resonance length L1, which is the distance between the pair of resonance facets F1 and F2, is 200 [ ⁇ m] or less.
  • the resonance length L1 may be 10 [ ⁇ m] or more and 200 [ ⁇ m] or less.
  • Each of the resonance facets F1 and F2 is the m-plane of the compound semiconductor portion 9 and may be included in the cleavage plane of the compound semiconductor portion 9 . That is, each of the resonance facets F1 and F2 can be formed by m-plane cleavage of the compound semiconductor portion 9, which is a nitride semiconductor layer (for example, a GaN-based semiconductor layer). At least one of the base semiconductor portion 8 and the compound semiconductor portion 9 may have a scribe trace for cleavage (a trace of formation of a starting point of cleavage).
  • Each of the resonance facets F1 and F2 is covered with a reflective boundary film UF (for example, a dielectric film), and the light reflectance of the resonance facet F1 on the light exit surface side is 98% or more.
  • the light reflectance of the resonance facet F1 may be 98.00% or more and 99.99% or less.
  • the light reflectance of the resonance facet F2 on the light reflecting surface side is higher than the light reflectance of the resonance facet F1.
  • the reflective boundary film UF can be formed over the entire cleaved plane (m-plane) of the base semiconductor portion 8 and the compound semiconductor portion 9 .
  • the first electrode E1 overlaps the optical resonator LK and the second portion B2 of the base semiconductor portion 8 in plan view.
  • the first electrode E1 has a shape whose longitudinal direction is the direction of the resonance length (Y direction), and the length of the first electrode E1 in the Y direction is smaller than the resonance length L1. Therefore, the first electrode E1 does not hinder the cleavage of the compound semiconductor portion 9. As shown in FIG.
  • the optical resonator LK includes a portion of each of the n-type semiconductor layer 9N, the active layer 9K, and the p-type semiconductor layer 9P (the portion overlapping the first electrode E1 in plan view).
  • the optical resonator LK is a part of each of the first clad layer 9B, the first optical guide layer 9C, the active layer 9K, the second optical guide layer 9D, the electron blocking layer 9E, and the second clad layer 9F (plan view and a portion overlapping with the first electrode E1).
  • the refractive index decreases in the order of the active layer 9K, the first optical guide layer 9C, and the first clad layer 9B.
  • the refractive index decreases in order of the cladding layer 9F. Therefore, the light generated by coupling the holes supplied from the first electrode E1 and the electrons supplied from the second electrode E2 in the active layer 9K enters the optical resonator LK (in particular, the active layer 9K). Confined, lasing occurs by stimulated emission and feedback action in the active layer 9K. Laser light generated by laser oscillation is emitted from the light emission area EA of the resonance facet F1 on the emission surface side.
  • the resonance facets F1 and F2 are formed by m-plane cleavage, they are excellent in planarity and perpendicularity to the c-plane (parallelism of the resonance facets F1 and F2), and have high light reflectance. Therefore, the reflection loss can be reduced, and stable laser oscillation is possible even with a short resonance length of 200 ⁇ m or less where the optical gain is small. Since the resonance facets F1 and F2 are formed on the second portion B2, which is a low-dislocation portion, the planarity of the cleavage plane is excellent, and high light reflectance is realized.
  • the compound semiconductor portion 9 includes a ridge portion RJ (ridge portion) overlapping the first electrode E1 in plan view, and the ridge portion RJ may include the second clad layer 9F and the second contact layer 9G.
  • the ridge portion RJ has a shape whose longitudinal direction is the Y direction, and an insulating film DF may be provided so as to cover the side surface of the ridge portion RJ. Both ends of the first electrode E1 in the X direction may overlap the insulating film DF in plan view.
  • the refractive index of the insulating film DF is smaller than those of the second optical guide layer 9D and the second cladding layer 9F.
  • the ridge portion RJ overlaps the second portion B2 (low dislocation portion) of the base semiconductor portion 8 in plan view, but does not overlap the first portion B1.
  • the current path from the first electrode E1 to the second electrode E2 via the compound semiconductor portion 9 and the base semiconductor portion 8 is formed in the portion overlapping the second portion B2 in plan view (the portion with few threading dislocations). and the luminous efficiency in the active layer 9K is enhanced. This is because threading dislocations act as non-radiative recombination centers.
  • the second electrode E2 overlaps the third portion B3 (low dislocation portion) of the base semiconductor portion 8 in plan view, the electron injection efficiency from the second electrode E2 to the base semiconductor portion 8 is enhanced.
  • the sum T1 of the thickness of the base semiconductor portion 8 and the thickness of the compound semiconductor portion 9 can be 5 [ ⁇ m] or more and 50 [ ⁇ m] or less. If the sum T1 of the thicknesses is too large, it becomes difficult to cleave so that the resonance length becomes 200 ⁇ m or less.
  • the ratio of the resonance length L1 to the thickness of the second portion B2 of the base semiconductor portion 8 can be 1-20. Further, the direction perpendicular to the direction of the resonance length L1 is defined as the first direction (X direction), the size of the second portion B2 in the X direction is defined as the width W2 of the second portion B2, and the resonance length L1 with respect to the width W2 of the second portion B2 can be 1-10. Further, the size of the first portion B1 in the X direction can be set to the width W1 of the first portion B1, and the ratio of the resonance length L1 to the width W1 of the first portion can be set to 1-200.
  • the base semiconductor portion 8 includes a base facet 8T (cleavage facet) flush with the resonance facet F1, and the density of dislocations (dislocations measured by CL (Cathode Luminescence) on the cleavage facet, mainly basal plane dislocations) on the base facet 8T. may be equal to or higher than the threading dislocation density of the second portion B2.
  • At least one of the pair of resonance facets F1 and F2 (for example, the resonance facet F2 on the reflecting surface side) has a surface roughness greater than that of the side surface 9S (see FIG. 10), which is the a-plane of the compound semiconductor portion 9. can be made smaller.
  • the a-plane is a plane parallel to the (11-20) plane of the nitride semiconductor layer.
  • Example 1 a power of, for example, 1 [mW] to 200 [mW] is supplied between the first and second electrodes E1 and E2, and a high-efficiency low-output semiconductor laser body is produced due to a short resonance length of 200 ⁇ m or less. can be realized.
  • a first region 8C and a second region 8S may be included in the lower surface (rear surface) of the base semiconductor portion 8 .
  • the first region 8C may have a larger surface roughness than the second region 8S.
  • At least one of a convex portion and a concave portion may occur in the first region 8C.
  • a plurality of randomly shaped ridges and a plurality of randomly shaped depressions may be formed.
  • the first region 8C may be the region corresponding to the first portion B1 (for example, the central region), and the second region 8S may be the region corresponding to the second portion B2 (for example, the central region and side regions between edges).
  • the first region 8C may be formed so as not to overlap the ridge portion RJ in plan view. Heat dissipation may be enhanced by the first region 8C.
  • a dielectric film made of the same material as the reflector film UF may be formed on at least part of the first region 8C.
  • FIG. 12 is a cross-sectional view showing the configuration of the semiconductor laser device according to Example 1.
  • the semiconductor laser element 23 includes a semiconductor laser body 21 including a base semiconductor portion 8 and a compound semiconductor portion 9 and a support ST holding the semiconductor laser body 21 .
  • Materials for the support ST include Si, SiC, AlN, and the like.
  • the support ST is arranged such that the compound semiconductor portion 9 and the first and second electrodes E1 and E2 are positioned between the support ST and the base semiconductor portion 8 .
  • the support ST includes a conductive first pad portion P1 and a second pad portion P2, the first electrode E1 is connected to the first pad portion P1 via the first bonding portion A1, and the second electrode E2 is the second electrode. It is connected to the second pad portion P2 via the second joint portion A2.
  • the second joint portion A2 is thicker than the first joint portion A1, and the difference in thickness between the first and second joint portions A1 and A2 is equal to or greater than the thickness of the compound semiconductor portion 9. This enables connection between the first and second electrodes E1 and E2 and the first and second pad portions P1 and P2 located on the same plane. That is, the semiconductor laser element 23 functions as a COS (Chip on Submount).
  • the semiconductor laser element 23 includes a semiconductor laser body 21 and a support ST.
  • the support ST includes two wide portions SH having a width larger than the resonance length of the semiconductor laser body 21, and a mounting portion SB located between the two wide width portions SH and having a width smaller than the resonance length. have.
  • the semiconductor laser body 21 is positioned above the mounting portion SB so that the width direction (Y direction) of the mounting portion SB is aligned with the direction of the resonance length. • F2 protrudes from the receiver SB.
  • the mounting portion SB is formed between two notches C1 and C2 facing each other in the direction (Y direction) defining the resonance length, and the resonance end surface F1 is positioned on the notch C1.
  • the resonance facet F2 is located on the cutout portion C2.
  • the shape of the cutouts C1 and C2 can be, for example, rectangular in a plan view in the Z direction.
  • the support ST may include a T-shaped first pad portion P1 and a second pad portion P2.
  • the first pad portion P1 is positioned on the wide portion SH and is positioned on the mounting portion J1 whose length in the Y direction is longer than the resonance length L1, and on the mounting portion SB whose length in the Y direction is the resonance length L1. and a contact portion Q1 smaller than the contact portion Q1.
  • the second pad portion P2 is positioned on the wide portion SH and is positioned on the mounting portion J2 whose length in the Y direction is longer than the resonance length L1, and on the mounting portion SB whose length in the Y direction is the resonance length L1. and a contact portion Q2 smaller than the contact portion Q2.
  • the contact portions Q1 and Q2 may be arranged in the X direction on the upper surface of the mounting portion SB, with the first joint portion A1 formed on the contact portion Q1 and the second joint portion A2 formed on the contact portion Q2.
  • the first junction A 1 contacts the first electrode E 1 of the semiconductor laser body 21
  • the second junction A 2 contacts the second electrode E 2 of the semiconductor laser body 21 .
  • Solders such as AuSi and AuSn can be used as materials for the first and second joints A1 and A2.
  • the resonance facets F1 and F2 of the semiconductor laser body 21 are covered with the reflective film UF.
  • a dielectric film SF made of the same material as that of the reflector film UF may be formed on the substrate.
  • FIG. 14 is a cross-sectional view showing another configuration of the semiconductor laser device according to Example 1.
  • the cutouts C1 and C2 are rectangular in plan view in the Z direction, but the shape is not limited to this.
  • the cutouts C1 and C2 may have a trapezoidal shape with short sides on the placement section SB side in plan view in the Z direction.
  • FIG. 15 and 16 are cross-sectional views showing another configuration of the semiconductor laser device according to Example 1.
  • a plurality of semiconductor laser bodies 21 are arranged on the support ST in a direction (X direction) perpendicular to the direction defining the resonance length so that the directions of the resonance lengths are aligned.
  • First and second pad portions P ⁇ b>1 and P ⁇ b>2 may be provided corresponding to each semiconductor laser body 21 .
  • a sensor device such as a photodiode PD may be provided in the notch C1 of the support ST. This makes it possible to detect the light from the semiconductor laser body 21 with the photodiode PD, and feedback-control the emission intensity of the semiconductor laser body 21 .
  • FIG. 17 is a perspective view showing the configuration of a semiconductor laser substrate (semiconductor laser array) according to Example 1.
  • the semiconductor laser substrate 22 includes a support substrate SK and a plurality of semiconductor laser bodies 21 .
  • a plurality of semiconductor laser bodies 21 are arranged on the support substrate SK in a direction defining the resonance length (Y direction) and in a direction orthogonal thereto (X direction) so that the directions of the resonance lengths are aligned. They may be arranged in a matrix.
  • first and second pad portions P1 and P2 and first and second joint portions A1 and A2 may be provided.
  • the support substrate SK is, for example, a Si substrate, a SiC substrate, or the like, provided with a plurality of recesses HL (rectangular in plan view) in a matrix, and non-recessed portions are provided with a plurality of first pad portions P1, a plurality of second pad portions P2, It can be formed by providing a plurality of first joints A1 and a plurality of second joints A2.
  • FIG. 18 is a perspective view showing another configuration of the semiconductor laser substrate according to Example 1.
  • FIG. A two-dimensional layout type semiconductor laser substrate, in which a plurality of semiconductor laser bodies are arranged in a matrix, as shown in FIG. A bar-shaped semiconductor laser substrate can also be used.
  • the one-dimensional arrangement facilitates the formation of the reflective boundary film UF on the pair of resonant end faces F1 and F2.
  • FIG. 20A to 20D are schematic cross-sectional views showing a method of manufacturing the semiconductor laser device of FIG.
  • a step of preparing a template substrate 7 including a base substrate UK and a mask layer 6, and a band-shaped (longitudinal shape, ridge-shaped) base semiconductor portion 8 base semiconductor portion 8 are formed by the ELO method.
  • the mask layer 6 is removed by etching, and the laminate LB is joined to the support substrate SK in a state in which the first and second joint portions A1 and A2 (for example, solder) of the support substrate SK are heated and melted. .
  • the joint portion (downward protruding portion) of the back surface of the first semiconductor layer S1 with the underlying substrate UK is broken, and the first semiconductor layer S1 is separated from the template substrate 7 . Since the first semiconductor layer S1 and the underlying substrate UK were bonded at the interface between them, after separating them, the interface adjacent portion of the first semiconductor layer S1 moved toward the underlying substrate UK side as shown in FIG. In some cases, it is attached, and in other cases, it is attached to the first semiconductor layer S1 side. Further, the interface adjacent portion of the underlying substrate UK may remain on the underlying substrate UK side, or may follow the first semiconductor layer S1 side.
  • the laminate LB is cleaved (m-plane cleavage of the first and second semiconductor layers S1 and S2, which are nitride semiconductor layers) on the support substrate SK to form a pair of resonance facets F1 and F2.
  • the laminated body LB may be scribed (for example, forming scribe grooves that serve as cleavage starting points).
  • a two-dimensional arrangement type semiconductor laser substrate (see FIG. 17) is formed.
  • the two-dimensional arrangement type semiconductor laser substrate is divided into rows to form one-dimensional arrangement type (bar-shaped) semiconductor laser substrates 22 (see FIG. 18).
  • a reflector film UF is formed on the resonance facets F1 and F2 of the one-dimensional arrangement type semiconductor laser substrate 22 .
  • the support substrate SK is divided into a plurality of supports ST, and one or more semiconductor laser bodies 21 are held on each support ST, thereby forming a plurality of junction-down semiconductor laser elements 23 (see FIGS. 13 to 15).
  • the reflector film UF (for example, dielectric film) is formed not only on the cleaved planes (m-planes) of the base semiconductor portion 8 and the compound semiconductor portion 9, but also on the side surfaces of the support ST parallel to the resonance facets F1 and F2. (including the side surface of the mounting portion SB).
  • FIG. 21 and 22 are schematic cross-sectional views showing another example of the method for manufacturing the semiconductor laser device according to the first embodiment.
  • a plurality of one-dimensionally arranged semiconductor laser substrates 22 are stacked in the Z direction so that the back surfaces of the base semiconductor portions 8 face each other.
  • a reflector film UF can also be formed simultaneously on F1 and F2.
  • FIG. 22 when the support substrate SK is divided into a plurality of support bodies ST, the semiconductor laser bodies 21 shown in FIG. can also be formed.
  • (Base semiconductor part) 23 is a cross-sectional view showing an example of lateral growth of an ELO semiconductor layer in Example 1.
  • the base substrate UK includes the main substrate 1 and the base layer 4 on the main substrate 1 , and the seed layer 3 of the base layer 4 is exposed through the openings K of the mask portion 5 .
  • an initial growth layer SL is formed on the seed layer 3, and then the first semiconductor layer S1 can be laterally grown from the initial growth layer SL.
  • the initial growth layer SL is a starting point of lateral growth of the first semiconductor layer S1 and a part of the first portion B1 of the base semiconductor portion 8 .
  • the initial growth is performed immediately before the edge of the initial growth layer SL climbs over the upper surface of the mask portion 5 (at the stage where it is in contact with the upper end of the side surface of the mask portion 5) or immediately after it climbs over the upper surface of the mask portion 5. It is preferable to stop the film formation of the layer SL (that is, switch the ELO film formation conditions from the c-axis direction film formation conditions to the a-axis direction film formation conditions at this timing). In this way, since the lateral film formation is performed in a state where the initial growth layer SL slightly protrudes from the mask portion 5, the material is less likely to be consumed in the growth of the first semiconductor layer S1 in the thickness direction. Layer S1 can be grown laterally at high speed.
  • the initial growth layer SL may be formed with a thickness of, for example, 2.0 ⁇ m or more and 3.0 ⁇ m or less.
  • Example 1 an n-type GaN layer is used as the first semiconductor layer S1 to form the base semiconductor portion 8, and an ELO film of Si-doped GaN (gallium nitride) is formed on the template substrate 7 using an MOCVD apparatus.
  • the width of the mask portion 5 is 50 ⁇ m
  • the width of the opening K is 5 ⁇ m
  • the width of the first semiconductor layer S1 is 53 ⁇ m
  • the width (size in the X direction) of the low-defect portions B2 and B3 is 24 ⁇ m
  • the thickness was 5 ⁇ m.
  • a heterosubstrate having a lattice constant different from that of the nitride semiconductor can be used for the main substrate 1 of FIG.
  • hetero-substrates include single-crystal silicon (Si) substrates, sapphire (Al 2 O 3 ) substrates, silicon carbide (SiC) substrates, and the like.
  • the plane orientation of the main substrate 1 is, for example, the (111) plane of a silicon substrate, the (0001) plane of a sapphire substrate, and the 6H—SiC (0001) plane of a SiC substrate.
  • a buffer layer 2 and a seed layer 3 can be provided in order from the main substrate 1 side as the base layer 4 in FIG.
  • both (the main substrate and the seed layer) melt together.
  • the buffer layer 2 may have at least one of the effect of increasing the crystallinity of the seed layer 3 and the effect of relaxing the internal stress of the first semiconductor layer S1.
  • the seed layer 3 is not limited to the configuration in which the entire mask portion 5 is overlapped. Since the seed layer 3 only needs to be exposed through the openings K, the seed layer 3 may be locally formed so as not to partially or wholly overlap the mask portion 5 .
  • the opening K of the mask layer 6 exposes the seed layer 3 and functions as a growth start hole for starting the growth of the first semiconductor layer S1.
  • has a function of a selective growth mask for lateral growth of Mask layer 6 may be a mask pattern including mask portion 5 and opening K.
  • a silicon oxide film (SiOx), a titanium nitride film (TiN, etc.), a silicon nitride film (SiNx), a silicon oxynitride film (SiON), and a metal film having a high melting point (for example, 1000° C. or higher) are used.
  • a single layer film containing any one of or a laminated film containing at least two of these can be used.
  • a silicon oxide film having a thickness of about 100 nm to 4 ⁇ m (preferably about 150 nm to 2 ⁇ m) is formed on the underlying layer 4 by sputtering, and a resist is applied to the entire surface of the silicon oxide film. After that, the resist is patterned by photolithography to form a resist having a plurality of striped openings. After that, a portion of the silicon oxide film is removed by a wet etchant such as hydrofluoric acid (HF) or buffered hydrofluoric acid (BHF) to form a plurality of openings K, and the resist is removed by organic cleaning to remove the mask layer 6. It is formed.
  • a wet etchant such as hydrofluoric acid (HF) or buffered hydrofluoric acid (BHF)
  • the openings K have a longitudinal shape (slit shape) and are periodically arranged in the a-axis direction (X direction) of the first semiconductor layer S1.
  • the width of the opening K is about 0.1 ⁇ m to 20 ⁇ m. As the width of each opening decreases, the number of threading dislocations propagating from each opening to the first semiconductor layer S1 decreases. Also, the width (the size in the X direction) of the low defect portions B2 and B3 can be increased.
  • a small amount of the silicon oxide film decomposes and evaporates during the formation of the ELO semiconductor layer, and may be incorporated into the ELO semiconductor layer. There are merits.
  • the mask layer 6 may be a single layer film of a silicon nitride film or a silicon oxynitride film, or may be a laminated film in which a silicon oxide film and a silicon nitride film are formed in this order on the underlying layer 4.
  • 4 may be a laminated film in which a silicon nitride film and a silicon oxide film are formed in this order, or a laminated film in which a silicon nitride film, a silicon oxide film and a silicon nitride film are formed in this order on an underlying layer.
  • a template substrate including a base substrate UK and a mask pattern on the base substrate UK may be used.
  • the template substrate may have a growth suppression region (for example, a region that suppresses crystal growth in the Z direction) corresponding to the mask portion 5 and a seed region corresponding to the opening K.
  • a growth suppression region and a seed region can be formed on the underlying substrate UK, and the first semiconductor layer S1 or the base semiconductor portion 8 can be formed on the growth suppression region and the seed region using the ELO method.
  • the compound semiconductor portion 9 can be formed using, for example, an MOCVD apparatus.
  • the first contact layer 9A is, for example, an n-type GaN layer
  • the first clad layer 9B is, for example, an n-type AlGaN layer
  • the first optical guide layer 9C is, for example, an n-type GaN layer
  • the active layer 9K is, for example, A MQW (Multi-Quantum Well) structure including InGaN layers can be used.
  • MQW Multi-Quantum Well
  • the electron blocking layer 9E is, for example, a p-type AlGaN layer
  • the second optical guide layer 9D is, for example, a p-type GaN layer
  • the second clad layer 9F is, for example, a p-type AlGaN layer
  • the second contact layer 9G is:
  • a p-type GaN layer can be used.
  • the second optical guide layer 9D and the electron blocking layer 9E may be alternately arranged in the p-type semiconductor layer 9P.
  • the p-type semiconductor layer 9P may consist of an electron blocking layer 9E, a second optical guide layer 9D, a second cladding layer 9F, and a second contact layer 9G formed in this order.
  • a metal film containing at least one of Ni, Rh, Pd, Cr, Au, W, Pt, Ti and Al is formed on the first and second electrodes E1 and E2 and the first and second pad parts P1 and P2.
  • a single layer film or a multilayer film containing at least one of (alloy film may be used) and a conductive oxide film containing at least one of Zn, In, and Sn can be used.
  • a single layer film or laminated film containing oxides or nitrides of Si, Al, Zr, Ti, Nb, and Ta can be used.
  • a first semiconductor layer S1 (ELO semiconductor layer) forming the base semiconductor portion 8 and a second semiconductor layer S2 forming the compound semiconductor portion 9 are formed continuously by the same film forming apparatus (for example, MOCVD apparatus). can do.
  • the intermediate substrate with the first semiconductor layer S1 formed thereon may be taken out from the film forming apparatus once, and the second semiconductor layer S2 may be formed on the first semiconductor layer S1 by another apparatus.
  • the second semiconductor layer S2 is formed after forming an n-type GaN layer (for example, about 0.1 ⁇ m to about 3 ⁇ m thick) to serve as a buffer during re-growth on the first semiconductor layer S1.
  • Dielectric materials such as SiO 2 , Al 2 O 3 , AlN, AlON, Nb 2 O 5 , Ta 2 O 5 and ZrO 2 can be used as materials for the reflective boundary film UF covering the resonance facets F1 and F2.
  • the reflective boundary film UF may be a multilayer film.
  • the reflective film UF can be formed by electron beam evaporation, electron cyclotron resonance sputtering, chemical vapor deposition, or the like.
  • FIG. 24 is a flow chart showing another example of the method for manufacturing the semiconductor laser device according to the first embodiment
  • 25A and 25B are schematic diagrams showing a method of manufacturing the semiconductor laser device of FIG.
  • the laminate LB is bonded to the support substrate SK. do.
  • the first semiconductor layer S1 is separated from the template substrate 7, and the laminated body LB is cleaved to form a pair of resonance end faces F1 and F2.
  • FIG. 26 is a flow chart showing another example of the method for manufacturing the semiconductor laser device according to the first embodiment.
  • 27A and 27B are schematic diagrams showing a method of manufacturing the semiconductor laser device of FIG.
  • the layered body LB is transferred from the template substrate 7 to the adhesive first tape TF, and the layered body LB is cleaved on the first tape TF to form a pair of tapes.
  • the first semiconductor layer S1 is separated from the template substrate 7 by removing the mask layer 6 by etching after forming the laminated body LB and transferring the laminated body LB to the adhesive first tape TF.
  • the laminate LB is cleaved (m-plane cleaved) on the first tape TF to form a pair of resonance end faces F1 and F2.
  • the resonance length can be 200 ⁇ m or less, but is not limited to this (the resonance length may be 200 ⁇ m or more).
  • a pair of resonance facets F1 and F2 may be formed by cleaving the laminated body LB after performing scribing (formation of starting points for m-plane cleavage) on the laminated body LB.
  • the cleavage may proceed naturally by scribing the laminated body LB and releasing the internal stress.
  • the semiconductor laser body 21 is temporarily transferred to the second tape TS, and the semiconductor laser body 21 on the second tape TS is joined to the support substrate SK.
  • a two-dimensional arrangement type semiconductor laser substrate (see FIG. 17) is formed.
  • the two-dimensionally arranged semiconductor laser substrate is divided into rows to form one-dimensionally arranged (bar-shaped) semiconductor laser substrates 22 (see FIG. 18).
  • a reflector film UF is formed on the resonance facets F1 and F2 of the one-dimensional arrangement type semiconductor laser substrate 22 .
  • each support ST holds one or more semiconductor laser bodies 21, thereby forming a plurality of semiconductor laser elements 23 (see FIGS. 13 to 15).
  • Each semiconductor laser body 21 is held by the support ST in a junction-down format (mounting format in which the ridge portion is located on the support ST side).
  • a material such as PET polyethylene terephthalate
  • a material such as polyimide can be used for the base material of the second tape TS.
  • the base materials of the first and second tapes TF and TS may be made of the same material, or may be made of different materials.
  • the laminate LB is cleaved on the first tape TF in FIG. 26, the present invention is not limited to this.
  • the laminate LB may be cleaved when transferring from the template substrate 7 to the first tape TF.
  • the laminate LB can be scribed on the template substrate 7 in advance.
  • the laminate LB is cleaved on the first tape TF in FIG. 26, the present invention is not limited to this.
  • the laminate LB transferred onto the first tape TF may be transferred onto a third tape, and the cleavage may be performed on the third tape.
  • scribe or the like is performed on the surface of the laminate LB opposite to the contact surface with the third tape, and a break blade or the like is used to laminate from the back surface of the third tape (over the third tape).
  • the lamination body LB may be cleaved by applying a stress to the body LB.
  • the third tape may be a dicing tape.
  • the base material of the first tape TF may be made of a material with a Young's modulus higher than that of the third tape. In this way, it is possible to reduce the deformation of the first tape TF when the first tape TF is pressed against the laminate LB, and it is possible to suppress the displacement of the laminate LB.
  • the third tape is more flexible than the first tape TF, when stress is applied to the laminate LB in, for example, a breaking step, the third tape easily follows the shape of the blade for breaking. , stress can be applied to a more concentrated range, facilitating the cleavage of the laminate LB.
  • the semiconductor laser body obtained by cleavage on the third tape may be transferred to the support substrate SK after being transferred to the (heat-resistant) second tape TS.
  • the semiconductor laser body obtained by cleavage on the third tape may be once transferred to the fourth tape, further transferred to the (heat-resistant) second tape TS, and then transferred (bonded) to the support substrate SK.
  • the base material of the first tape TF can be made of PET, for example, and the base material of the third tape can be made of polyolefin, for example.
  • the Young's modulus of the first tape TF may be, for example, 2000 MPa or more, and the Young's modulus of the third tape may be, for example, 1500 MPa or less.
  • the transfer can be performed so that the upper surface of the laminated body LB is exposed.
  • the first semiconductor layer S1 is grown so that the upper surface (growth surface) of the first semiconductor layer S1 is the c-plane, which is the (0001) plane
  • the upper surface of the stacked body LB is also the c-plane (Ga-plane). Cleavage can be easily performed by scribing the surface for cleavage.
  • the thickness of the laminate LB excluding the electrodes may be, for example, 10 ⁇ m or more.
  • the laminated body LB to be cleaved can be prevented from cracking and bending, thereby improving the yield.
  • the semiconductor laser element on the first tape TF is transferred to the second tape TS and then joined to the support substrate SK, but it is not limited to this.
  • the semiconductor laser elements on the first tape TF may be transferred (bonded) to the support substrate SK, and connected to wiring on the support substrate SK, for example, via bonding wires.
  • the semiconductor laser body obtained by cleaving the laminated body LB transferred to the third tape (from the first tape TF) can be transferred (joined) to the support substrate SK (from the third tape) (junction down implementation possible).
  • FIG. 28 is a flow chart showing another example of the method for manufacturing the semiconductor laser device according to the first embodiment.
  • 29A and 29B are schematic diagrams showing a method of manufacturing the semiconductor laser device of FIG.
  • the laminated body LB is scribed on the template substrate 7 (for example, to form the starting crack SC of m-plane cleavage), and at the same time, the laminated body LB is cleaved to form a pair of resonance end faces F1.
  • - Carry out the step of forming F2. In this step, cleavage naturally progresses due to the release of the internal stress of the laminate LB by scribing.
  • the resonance length (resonator length) can be 200 ⁇ m or less, but is not limited to this, and may be 200 ⁇ m or more.
  • FIG. 30 is a perspective view showing the configuration of a semiconductor laser body according to Example 2.
  • FIG. FIG. 31 is a cross-sectional view showing the configuration of a semiconductor laser body according to Example 2.
  • the second electrode E2 is provided on the same side as the first electrode E1 with respect to the base semiconductor portion 8, but it is not limited to this. As shown in FIGS. 30 and 31, the second electrode E2 may be provided on the side of the base semiconductor section 8 different from the first electrode E1 (that is, the back surface of the base semiconductor section 8).
  • the configurations of the base semiconductor portion 8, the compound semiconductor portion 9, and the first electrode E1 are the same as those of the first embodiment. By doing so, the current path between the first and second electrodes E1 and E2 is shortened, so that the luminous efficiency in the active layer 9K can be increased.
  • FIG. 32 is a cross-sectional view showing the configuration of a semiconductor laser device according to Example 2.
  • the semiconductor laser element 23 includes a semiconductor laser body 21 including a base semiconductor portion 8 and a compound semiconductor portion 9, a support ST holding the semiconductor laser body 21, and a conductive film MF in contact with the second electrode E2.
  • the second electrode E2 is located on the back surface of the base semiconductor section 8, and the compound semiconductor section 9 and the first electrode E1 are closer to the support ST than the base semiconductor section 8 (junction-down type).
  • the support ST (eg, submount) includes conductive first and second pad portions P1 and P2 and conductive first and second joint portions A1 and A2.
  • the first electrode E1 is connected to the first pad portion P1 via the first bonding portion A1
  • the second electrode E2 is connected to the second pad portion P2 via the conductive film MF and the second bonding portion A2. .
  • FIG. 33 is a flow chart showing another example of the semiconductor laser device manufacturing method according to the second embodiment.
  • 34A and 34B are schematic diagrams showing a method of manufacturing the semiconductor laser device of FIG. In the manufacturing method shown in FIGS. 33 and 34, a step of preparing a template substrate 7 including a base substrate UK and a mask layer 6, and a first semiconductor layer S1 (and a third semiconductor layer S1), which is the source of the base semiconductor portion 8, are performed by the ELO method.
  • FIG. 35 is a perspective view showing the configuration of the semiconductor laser device according to Example 2.
  • the semiconductor laser element 23 includes a semiconductor laser body 21 and a support ST.
  • the support ST includes two wide portions SH having a width larger than the resonance length of the semiconductor laser body 21, and a mounting portion SB located between the two wide width portions SH and having a width smaller than the resonance length. have.
  • the support ST includes a T-shaped first pad portion P1 and a second pad portion P2.
  • the first pad portion P1 is positioned on the wide portion SH and is positioned on the mounting portion J1 whose length in the Y direction is longer than the resonance length L1, and on the mounting portion SB whose length in the Y direction is the resonance length L1.
  • the second pad portion P2 is located on the wide portion SH, the mounting portion J2 having a length in the Y direction greater than the resonance length L1, and the mounting portion SB. , and a contact portion Q2 whose length in the Y direction is smaller than the resonance length L1.
  • the contact portions Q1 and Q2 are arranged in the X direction on the upper surface of the mounting portion SB, and the second joint portion A2 is formed on the contact portion Q2.
  • the first junction A1 contacts the first electrode E1 (anode) of the semiconductor laser body 21 .
  • the contact portion Q2 of the second pad portion P2 is in contact with the conductive film MF of the semiconductor laser body 21, thereby electrically connecting the second electrode E2 (cathode) and the second pad portion P2.
  • the first semiconductor layer S1 (ELO semiconductor layer) that is the source of the base semiconductor portion 8 can be a GaN layer, but an InGaN layer that is a GaN-based semiconductor layer is formed as the ELO semiconductor layer.
  • You can also Lateral deposition of the InGaN layer is performed at low temperatures, eg, below 1000.degree. This is because, at high temperatures, the vapor pressure of indium increases and it is not effectively incorporated into the film. Lowering the film formation temperature has the effect of reducing the mutual reaction between the mask portion 5 and the InGaN layer.
  • the InGaN layer has the effect of being less reactive with the mask portion 5 than the GaN layer.
  • TAG triethylgallium
  • FIG. 36 is a perspective view showing the configuration of the semiconductor laser module of Example 4.
  • the semiconductor laser module 24 (semiconductor laser device) of FIG. 36 is a surface-mounted package, and includes a housing 35 and a semiconductor laser element 23 (see FIG. 15, for example).
  • the semiconductor laser element 23 includes a plurality of semiconductor laser bodies 21 , and is provided so that the side surface of the support ST (the surface parallel to the resonance facet) faces the bottom surface 37 of the housing 35 . Therefore, the emission surface (resonance facet F1 on the emission side) of each semiconductor laser body 21 faces the top surface 34 (transparent plate) of the housing 35, and the laser light is emitted from the top surface 34 of the housing 35.
  • the semiconductor laser element 23 is connected to external connection pins 33 via wires 31 .
  • FIG. 37 is a perspective view showing another configuration of the semiconductor laser module of Example 4.
  • the semiconductor laser module 24 (semiconductor laser device) of FIG. 37 is a TO-CAN mounting type package, and includes a stem 38 and a semiconductor laser element 23 (see FIG. 13, for example).
  • the semiconductor laser element 23 is arranged on a heat block 36 projecting from the base of the stem 38 .
  • the first and second pad portions P 1 and P 2 of the semiconductor laser element 23 are connected to external connection pins 33 via wires 31 .
  • the semiconductor laser element 23 has first and second pad portions P1 and P2 that satisfy size conditions required for wire bonding on the support ST. These first and second pad portions P1 and P2 are electrically connected to the first and second electrodes (anode/cathode) of the semiconductor laser body 21 (semiconductor laser chip). Therefore, it is sufficient to electrically connect the external connection pins 33 of the package and the first and second pad portions P1 and P2 with the wires 31 .
  • FIG. 38 is a schematic diagram illustrating the configuration of an electronic device according to the fifth embodiment;
  • the electronic equipment 50 of FIG. 38 includes the semiconductor laser device ZD (21 to 24) described in Examples 1 to 4, and a controller 80 including a processor and controlling the semiconductor laser device ZD.
  • Examples of the electronic device 50 include a lighting device, a display device, a communication device, an information processing device, a medical device, an electric vehicle (EV), and the like.
  • Example 6 In Example 1, the compound semiconductor portion 9 is provided on the c-plane of the base semiconductor portion 8, and the pair of resonance facets is the m-plane of the nitride semiconductor, but the present invention is not limited to this. As shown in FIG. 39, the compound semiconductor portion 9 is provided on the m-plane ((1-100) plane) of the base semiconductor portion 8, and the pair of resonance end faces are the c-plane ((0001) plane) of the nitride semiconductor. can also The resonance length L1 is the length in the c-axis direction.
  • the resonance facet F1 can be formed, for example, by c-plane cleavage of a nitride semiconductor.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un corps laser à semi-conducteur comprenant une partie semi-conductrice de base et une partie semi-conductrice composée positionnée sur la partie semi-conductrice de base et comprenant un semi-conducteur à base de GaN. La partie semi-conductrice de base comprend une première partie et une seconde partie dont une densité de dislocations traversantes s'étendant dans la direction de l'épaisseur est inférieure à celle de la première partie. La partie semi-conductrice composite comprend un résonateur optique comprenant une paire de faces d'extrémité résonantes. Au moins l'une de la paire de faces d'extrémité résonantes est le plan m ou le plan c de la partie semi-conductrice composée, et une longueur de résonance ou la distance entre la paire de faces d'extrémité de résonance est inférieure ou égale à 200 [μm].
PCT/JP2022/023089 2021-06-17 2022-06-08 Corps laser à semi-conducteur, élément laser à semi-conducteur, substrat de laser à semi-conducteur, appareil électronique, et procédé et dispositif de fabrication de dispositif laser à semi-conducteur WO2022264893A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2023529813A JPWO2022264893A1 (fr) 2021-06-17 2022-06-08
EP22824885.2A EP4358323A1 (fr) 2021-06-17 2022-06-08 Corps laser à semi-conducteur, élément laser à semi-conducteur, substrat de laser à semi-conducteur, appareil électronique, et procédé et dispositif de fabrication de dispositif laser à semi-conducteur
US18/570,851 US20240283219A1 (en) 2021-06-17 2022-06-08 Semiconductor laser body, semiconductor laser element, semiconductor laser substrate, electronic apparatus, and manufacturing method and manufacturing apparatus of semiconductor laser device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021100954 2021-06-17
JP2021-100954 2021-06-17

Publications (1)

Publication Number Publication Date
WO2022264893A1 true WO2022264893A1 (fr) 2022-12-22

Family

ID=84527432

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2022/023089 WO2022264893A1 (fr) 2021-06-17 2022-06-08 Corps laser à semi-conducteur, élément laser à semi-conducteur, substrat de laser à semi-conducteur, appareil électronique, et procédé et dispositif de fabrication de dispositif laser à semi-conducteur

Country Status (4)

Country Link
US (1) US20240283219A1 (fr)
EP (1) EP4358323A1 (fr)
JP (1) JPWO2022264893A1 (fr)
WO (1) WO2022264893A1 (fr)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002076518A (ja) * 2000-08-30 2002-03-15 Sony Corp 半導体レーザおよび半導体素子並びにそれらの製造方法
JP2004007009A (ja) * 1999-11-15 2004-01-08 Matsushita Electric Ind Co Ltd 窒化物半導体素子の製造方法
JP2005109061A (ja) * 2003-09-30 2005-04-21 Renesas Technology Corp 半導体装置製造用治具、治具の製造方法及び半導体装置の製造方法
JP2005353702A (ja) 2004-06-08 2005-12-22 Matsushita Electric Ind Co Ltd 半導体レーザ装置およびその製造方法
JP2006332521A (ja) * 2005-05-30 2006-12-07 Fujifilm Holdings Corp 半導体レーザー装置
JP2013042107A (ja) * 2011-02-17 2013-02-28 Rohm Co Ltd 半導体レーザ素子
JP2013211596A (ja) * 2013-07-05 2013-10-10 Sharp Corp 窒化物半導体発光素子
JP2013243217A (ja) * 2012-05-18 2013-12-05 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体レーザ素子
US8971368B1 (en) * 2012-08-16 2015-03-03 Soraa Laser Diode, Inc. Laser devices having a gallium and nitrogen containing semipolar surface orientation

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004007009A (ja) * 1999-11-15 2004-01-08 Matsushita Electric Ind Co Ltd 窒化物半導体素子の製造方法
JP2002076518A (ja) * 2000-08-30 2002-03-15 Sony Corp 半導体レーザおよび半導体素子並びにそれらの製造方法
JP2005109061A (ja) * 2003-09-30 2005-04-21 Renesas Technology Corp 半導体装置製造用治具、治具の製造方法及び半導体装置の製造方法
JP2005353702A (ja) 2004-06-08 2005-12-22 Matsushita Electric Ind Co Ltd 半導体レーザ装置およびその製造方法
JP2006332521A (ja) * 2005-05-30 2006-12-07 Fujifilm Holdings Corp 半導体レーザー装置
JP2013042107A (ja) * 2011-02-17 2013-02-28 Rohm Co Ltd 半導体レーザ素子
JP2013243217A (ja) * 2012-05-18 2013-12-05 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体レーザ素子
US8971368B1 (en) * 2012-08-16 2015-03-03 Soraa Laser Diode, Inc. Laser devices having a gallium and nitrogen containing semipolar surface orientation
JP2013211596A (ja) * 2013-07-05 2013-10-10 Sharp Corp 窒化物半導体発光素子

Also Published As

Publication number Publication date
JPWO2022264893A1 (fr) 2022-12-22
US20240283219A1 (en) 2024-08-22
EP4358323A1 (fr) 2024-04-24

Similar Documents

Publication Publication Date Title
JP4909533B2 (ja) 半導体レーザ素子及びその製造方法
JP2010109147A (ja) 発光素子およびその製造方法
US20240079856A1 (en) Method of fabricating a resonant cavity and distributed bragg reflector mirrors for a vertical cavity surface emitting laser on a wing of an epitaxial lateral overgrowth region
JP2000323797A (ja) 窒化物半導体レーザ及びその製造方法
JP2000106473A (ja) 半導体素子、半導体発光素子およびその製造方法ならびに窒化物系半導体層の形成方法
JPWO2006041134A1 (ja) 窒化化合物半導体素子およびその製造方法
JP2953326B2 (ja) 窒化ガリウム系化合物半導体レーザ素子の製造方法
JP2003283052A (ja) 半導体装置及びその製造方法
JP2009123939A (ja) 窒化物系半導体素子およびその製造方法
JP4493041B2 (ja) 窒化物半導体発光素子
JP2003046201A (ja) 半導体レーザー素子の製造方法及び半導体レーザー素子
JP2004047918A (ja) 窒化物半導体レーザ素子の製造方法
US20240106190A1 (en) Light-emitting element, semiconductor laser element, and manufacturing method and manufacturing apparatus thereof
JP4097343B2 (ja) 窒化物半導体レーザ素子の製造方法
WO2022264893A1 (fr) Corps laser à semi-conducteur, élément laser à semi-conducteur, substrat de laser à semi-conducteur, appareil électronique, et procédé et dispositif de fabrication de dispositif laser à semi-conducteur
JP4100013B2 (ja) 窒化物半導体レーザ素子及びその製造方法
WO2023276624A1 (fr) Corps électroluminescent, procédé et appareil de production de corps électroluminescent, élément électroluminescent et son procédé de production, et dispositif électronique
WO2023145763A1 (fr) Procédé et appareil de fabrication d'élément laser, élément laser et dispositif électronique
WO2023153358A1 (fr) Dispositif de production et procédé de production d'élément laser
JP2009088270A (ja) 半導体素子の製造方法
TWI837788B (zh) 半導體裝置之製造方法及製造裝置
WO2023008458A1 (fr) Procédé de fabrication de dispositif à semi-conducteurs, substrat de gabarit, dispositif à semi-conducteur, équipement électronique et appareil de fabrication de dispositif à semi-conducteurs
WO2022181542A1 (fr) Procédé de fabrication de dispositif à semi-conducteur, dispositif à semi-conducteur et appareil à semi-conducteur
WO2023190336A1 (fr) Élément électroluminescent, et procédé et dispositif de fabrication de celui-ci
WO2023238923A1 (fr) Procédé et appareil de production d'un dispositif laser à semi-conducteur

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22824885

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 18570851

Country of ref document: US

Ref document number: 2023529813

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2022824885

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2022824885

Country of ref document: EP

Effective date: 20240117