WO2022255337A1 - 光電変換素子、太陽電池モジュール及びパドル - Google Patents

光電変換素子、太陽電池モジュール及びパドル Download PDF

Info

Publication number
WO2022255337A1
WO2022255337A1 PCT/JP2022/022062 JP2022022062W WO2022255337A1 WO 2022255337 A1 WO2022255337 A1 WO 2022255337A1 JP 2022022062 W JP2022022062 W JP 2022022062W WO 2022255337 A1 WO2022255337 A1 WO 2022255337A1
Authority
WO
WIPO (PCT)
Prior art keywords
photoelectric conversion
layer
conversion element
electrode layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/022062
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
隆鳳 石内
恭平 堀口
幹雄 濱野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idemitsu Kosan Co Ltd
Original Assignee
Idemitsu Kosan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd
Priority to US18/565,280 priority Critical patent/US20240258442A1/en
Priority to CN202280046358.0A priority patent/CN117581386A/zh
Priority to JP2023525840A priority patent/JPWO2022255337A1/ja
Priority to EP22816083.4A priority patent/EP4350780A4/en
Publication of WO2022255337A1 publication Critical patent/WO2022255337A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B64—AIRCRAFT; AVIATION; COSMONAUTICS
    • B64G—COSMONAUTICS; VEHICLES OR EQUIPMENT THEREFOR
    • B64G1/00—Cosmonautic vehicles
    • B64G1/22—Parts of, or equipment specially adapted for fitting in or to, cosmonautic vehicles
    • B64G1/42—Arrangements or adaptations of power supply systems
    • B64G1/44—Arrangements or adaptations of power supply systems using radiation, e.g. deployable solar arrays
    • B64G1/443—Photovoltaic cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Definitions

  • the present invention relates to photoelectric conversion elements, solar cell modules and paddles.
  • Patent Document 1 A photoelectric conversion element that converts light energy into electrical energy is known (Patent Document 1).
  • the photoelectric conversion element described in Patent Document 1 includes a substrate made of an insulating material, a back electrode layer formed on the substrate, a power generation layer formed on the back electrode layer, and a transparent electrode layer formed on the power generation layer. It comprises an electrode layer and a metal collecting electrode formed on the transparent electrode layer.
  • the collecting electrode has a plurality of finger portions that collect electrons from the transparent electrode layer, and a busbar portion that further collects the electrons collected by the finger portions.
  • the finger portion is formed in an elongated linear shape extending from the busbar portion.
  • the inventors of the present application have found the problem that peeling may occur in the layers constituting the photoelectric conversion element at the collector electrodes due to temperature changes in the photoelectric conversion element. When such peeling occurs, there is a possibility that the photoelectric conversion efficiency of the photoelectric conversion element is lowered or the photoelectric conversion function is lost.
  • a photoelectric conversion element includes a photoelectric conversion layer, an electrode layer adjacent to the photoelectric conversion layer, and a collecting electrode adjacent to the electrode layer.
  • the collector electrode has a linear first portion. When the length of the first portion is L, the width of the first portion is W, and the thickness of the first portion is D, "D ⁇ L/W" is 2.5 ⁇ 10 3 less than ⁇ m.
  • FIG. 1 is a schematic plan view of a photoelectric conversion element according to a first embodiment
  • FIG. FIG. 2 is an enlarged view of the vicinity of area 2A in FIG. 1
  • FIG. 3 is a schematic cross-sectional view of the photoelectric conversion element along line 3A-3A in FIG. 2
  • 1 is a schematic plan view of a solar cell module including photoelectric conversion elements
  • FIG. 1 is a schematic perspective view of an artificial satellite equipped with solar cell modules;
  • FIG. 1 is a schematic plan view of a photoelectric conversion element according to the first embodiment.
  • FIG. 2 is an enlarged view of the vicinity of area 2A in FIG. 3 is a schematic cross-sectional view of the photoelectric conversion element along line 3A-3A in FIG. 2.
  • FIG. 2 does not show the antireflection film 40 on the collector electrode 30, which will be described later.
  • the photoelectric conversion element 10 may be a thin film type photoelectric conversion element.
  • photoelectric conversion element 10 is a solar cell element that converts light energy into electrical energy.
  • the substrate 20 may be made of glass, ceramics, resin, metal, or the like, for example.
  • the photoelectric conversion element 10 may include at least a first electrode layer 22 , a second electrode layer 24 , and a laminate 25 provided between the first electrode layer 22 and the second electrode layer 24 .
  • the laminate 25 may include a photoelectric conversion layer 26 that contributes to mutual conversion of light energy and electrical energy.
  • the photoelectric conversion layer 26 is sometimes called a light absorption layer.
  • the first electrode layer 22 and the second electrode layer 24 are adjacent to the photoelectric conversion layer 26 .
  • the term "adjacent” shall mean not only that both layers are in direct contact, but also that both layers are adjacent through another layer.
  • the first electrode layer 22 is provided between the photoelectric conversion layer 26 and the substrate 20 .
  • the second electrode layer 24 is located on the side opposite to the substrate 20 with respect to the photoelectric conversion layer 26 . Therefore, the first electrode layer 22 is located on the side opposite to the second electrode layer 24 with respect to the photoelectric conversion layer 26 .
  • the second electrode layer 24 may be composed of a transparent electrode layer.
  • the second electrode layer 24 is composed of a transparent electrode layer, light incident on the photoelectric conversion layer 26 or emitted from the photoelectric conversion layer 26 passes through the second electrode layer 24 .
  • the first electrode layer 22 may be composed of an opaque electrode layer or a transparent electrode layer.
  • the first electrode layer 22 may be made of metal such as molybdenum, titanium or chromium, for example.
  • the second electrode layer 24 may be made of an n-type semiconductor, more specifically, a material having n-type conductivity and relatively low resistance.
  • the second electrode layer 24 may comprise, for example, a metal oxide doped with a Group III element (B, Al, Ga, or In) as a dopant. Examples of metal oxides are ZnO or SnO2 .
  • the second electrode layer 24 is made of In 2 O 3 (indium oxide), ITO (indium tin oxide), ITiO (indium titanium oxide), IZO (indium zinc oxide), as examples of the materials described above or other materials.
  • the second electrode layer 24 can function as both an n-type semiconductor and a transparent electrode layer.
  • the photoelectric conversion layer 26 may contain, for example, a p-type semiconductor.
  • the photoelectric conversion layer 26 may function as, for example, a polycrystalline or microcrystalline p-type compound semiconductor layer.
  • the photoelectric conversion layer 26 may have a CIS-based light absorption layer.
  • the photoelectric conversion layer 26 includes group I elements (Cu, Ag, Au, etc.), III group elements (Al, Ga, In, etc.) and VI group elements (O, S, Se, Te, etc.) is formed of an I-III-VI Group 2 compound semiconductor with a chalcopyrite structure.
  • the photoelectric conversion layer 26 is not limited to those described above, and may be composed of any material that causes photoelectric conversion.
  • the photoelectric conversion layer 26 may contain alkali metals such as Li, Na, K, Rb, and Cs.
  • the laminated structure of the photoelectric conversion element 10 is not limited to the above aspect, and can take various aspects.
  • the photoelectric conversion element 10 may have a structure in which both the n-type semiconductor and the p-type semiconductor are sandwiched between the first electrode layer and the second electrode layer.
  • the second electrode layer does not have to be made of an n-type semiconductor.
  • the photoelectric conversion element 10 is not limited to a pn junction type structure, and may have a pin junction type structure including an intrinsic semiconductor layer (i-type semiconductor) between an n-type semiconductor and a p-type semiconductor. may have.
  • the laminate 25 may have a second buffer layer 28 between the photoelectric conversion layer 26 and the second electrode layer 24, if necessary.
  • the second buffer layer 28 may be a semiconductor material having the same conductivity type as the second electrode layer 24, or may be a semiconductor material having a different conductivity type.
  • the second buffer layer 28 may be made of a material with higher electrical resistance than the second electrode layer 24 .
  • the second buffer layer 28 may be, for example, a Zn-based buffer layer, a Cd-based buffer layer, or an In-based buffer layer.
  • the Zn-based buffer layer may be, for example, ZnS, ZnO, Zn(OH) 2 or ZnMgO, or mixtures, mixed crystals or laminates thereof.
  • the Cd-based buffer layer may be, for example, CdS, CdO or Cd(OH) 2 , or mixtures, mixed crystals or laminates thereof.
  • the In-based buffer layer may be, for example, In 2 S 3 , In 2 O 3 or In(OH) 3 , or mixtures, mixed crystals or laminates thereof.
  • the laminate 25 may have a first buffer layer 27 between the photoelectric conversion layer 26 and the first electrode layer 22, if necessary.
  • the first buffer layer 27 may be a semiconductor material having the same conductivity type as the first electrode layer 22, or may be a semiconductor material having a different conductivity type.
  • the first buffer layer 27 may be made of a material having higher electrical resistance than the first electrode layer 22 .
  • the first buffer layer 27 is not particularly limited, but may be, for example, a layer containing a chalcogenide compound of a transition metal element having a layered structure.
  • the first buffer layer 27 may be composed of a compound composed of a transition metal material such as Mo, W, Ti, V, Cr, Nb, Ta and a chalcogen element such as O, S, Se. .
  • the first buffer layer 27 may be, for example, a Mo(Se,S) 2 layer, a MoSe 2 layer, a MoS 2 layer, a Cr x TaS 2 layer, or the like.
  • the layer having a layered structure described above is a layer having a cleavage property. This cleavable layer may be a layer having a hexagonal crystal structure.
  • the photoelectric conversion element 10 includes a collector electrode 30 adjacent to the second electrode layer 24 .
  • the current collecting electrode 30 collects charge carriers from the second electrode layer 24 and is formed of a conductive material.
  • the collector electrode 30 may be in direct contact with the second electrode layer 24 .
  • the collecting electrode 30 may have a substantially linear first portion 31 and a second portion 32 connected to the first portion 31 .
  • the collector electrode 30 (the first portion 31 and the second portion 32) may be made of a material with higher conductivity than the material that makes up the second electrode layer 24.
  • the current collecting electrode 30 (the first part 31 and the second part 32) is made of one or more materials selected from, for example, Ni, Mo, Ti, Cr, Al, Ag, Cu, Au, etc. good.
  • the collecting electrode 30 may be an alloy or laminate made up of a combination of the materials described above.
  • the substantially linear first portion 31 extends straight along one direction (the X direction in the drawing) in the illustrated embodiment.
  • the first portion 31 may extend in a wavy or zigzag polygonal line.
  • linear is defined by a concept including not only straight lines but also elongated curved lines such as wavy lines and polygonal lines.
  • a plurality of first portions 31 of the current collecting electrode 30 may be provided side by side in the first direction (the Y direction in the drawing).
  • a plurality of first portions 31 may be connected to the same second portion 32 .
  • the first portion 31 of the current collecting electrode 30 protrudes in a direction (the Y direction in the figure) intersecting the direction in which the linear first portion 31 extends at the end opposite to the second portion 32 . It may have one or more projections 31a. Since the end (free end) region of the first portion 31 is widened by the projection 31a, the thermal stress generated in the end (free end) region of the first portion 31 can be dispersed. In the illustrated form, a plurality of projections 31a are provided in the region of the end (free end) of the first portion 31 .
  • the second portion 32 of the collector electrode 30 may extend in the first direction (the Y direction in the drawing).
  • the second portion 32 may be connected to the first portion 31 at the end of the first portion 31 .
  • the plurality of first portions 31 may extend from the second portion 32 along the second direction.
  • the second direction is a direction (the X direction in the figure) intersecting with the above-described first direction.
  • the second portion 32 of the collector electrode 30 may substantially extend from near one end of the photoelectric conversion element 10 to near the other end in the first direction (the Y direction in the drawing).
  • the second portion 32 of the current collecting electrode 30 may be larger than each first portion 31 .
  • the width of the second portion 32 in the X direction of the drawing may be greater than the width of the first portion 31 in the Y direction of the drawing.
  • the photoelectric conversion element 10 may have an antireflection film 40 that suppresses reflection of light.
  • the antireflection film 40 may be provided, for example, on both the collector electrode 30 and the second electrode layer 24 on which the collector electrode 30 is not formed.
  • the inventors of the present application have found that, depending on the design of the length, width, and thickness of the first portion 31 of the current collecting electrode 30, the photoelectric conversion element is subjected to temperature cycling at the free end of the first portion 31 of the current collecting electrode 30. It was found to delaminate or break upon testing. From this point of view, the inventor found preferable conditions regarding the length, width and thickness of the first portion 31 of the collector electrode 30 . This condition will be described below.
  • the length of the first portion 31 along the direction in which the first portion 31 extends is "L".
  • the length L of the first portion 31 is defined by the distance from the connecting portion of the first portion 31 to the second portion 32 to the end of the first portion 31 opposite to the second portion 32. be done.
  • W be the width of the first portion 31 in the direction crossing the direction in which the first portion 31 extends (the Y direction in the drawing). Note that the width W may be the width of the portion that does not include the protrusion 31a described above. Also, let the thickness of the first portion 31 be "D”.
  • the first portion 31 of the collector electrode 30 thermally expands/contracts due to temperature changes.
  • One end of the first portion 31 is fixed to the relatively large second portion 32 (fixed end). Therefore, the other end (free end) of the first portion 31 thermally expands and contracts relatively freely. That is, it is considered that the influence of the thermal stress generated in the first portion 31 of the current collecting electrode 30 concentrates on the free end of the first portion 31 .
  • this concentration of thermal stress is considered to affect the width W of the first portion 31 as well. That is, when the width W of the first portion 31 is small, the area of the first portion 31 is small, and the thermal stress is accordingly concentrated in a local region. Therefore, the degree of thermal stress concentration (density) in the vicinity of the free end of the first portion 31 depends on the ratio of the length L to the width W of the first portion 31 (hereinafter referred to as "aspect ratio L/W"). roughly proportional.
  • the thermal stress generated in the thin film is proportional to the film thickness. Therefore, the thermal stress generated in the first portion 31 of the collector electrode 30 is proportional to the thickness D as well. Therefore, it can be seen that the degree of thermal stress concentration (density) in the vicinity of the free end of the first portion 31 is generally expressed by an index of "D ⁇ L/W".
  • “D ⁇ L/W” is less than 2.5 ⁇ 10 3 ⁇ m, and may be 2.4 ⁇ 10 3 ⁇ m or less, for example.
  • “D ⁇ L/W” is 2.2 ⁇ 10 3 ⁇ m or less. More preferably, “D ⁇ L/W” is 1.8 ⁇ 10 3 ⁇ m or less. More preferably, “D ⁇ L/W” is 1.4 ⁇ 10 3 ⁇ m or less. This makes it possible to provide a photoelectric conversion element that is highly resistant to temperature changes, as will be described in detail below. Note that the lower limit of "D ⁇ L/W” is not particularly limited, and “D ⁇ L/W” may be greater than 0, for example.
  • “L/W” may be, for example, 6.25 ⁇ 10 2 or less.
  • “L/W” is 5.6 ⁇ 10 2 or less. More preferably, “L/W” is 5.0 ⁇ 10 2 or less. More preferably, “L/W” is 4.4 ⁇ 10 2 or less. Even more preferably, “L/W” is 3.6 ⁇ 10 2 or less.
  • the value of “L/W” is set so as not to exceed the upper limit of “D ⁇ L/W” described above.
  • “L/W” is not particularly limited, it may be greater than 1.0, for example.
  • the thickness D of the first portion 31 may be, for example, 12 ⁇ m or less.
  • the thickness D of the first portion 31 is 8 ⁇ m or less. More preferably, the thickness D of the first portion 31 is 6 ⁇ m or less. More preferably, the thickness D of the first portion 31 is 4 ⁇ m or less.
  • the thickness D of the first portion 31 is set so as not to exceed the upper limit value of "D ⁇ L/W" described above.
  • the lower limit of the thickness D of the first portion 31 is not particularly limited, and the thickness D may be, for example, greater than 0 ⁇ m.
  • the photoelectric conversion layer 26 is a CIS-based light absorption layer
  • the first electrode layer 22 is made of molybdenum
  • the first buffer layer 27 is made of Mo(Se,S ) and the second electrode layer 24 was a transparent electrode layer.
  • the collector electrode 30 (the first portion 31 and the second portion 32) was formed of a laminate of nickel and silver.
  • the thickness of nickel forming the collector electrode 30 was 10 nm.
  • a photoelectric conversion element including a collecting electrode 30 having first portions 31 having different lengths L and widths W is prepared. And a temperature cycle test was performed with different thicknesses D.
  • the length L of the first portion 31 is defined by the distance from the connecting portion of the first portion 31 to the second portion 32 to the end of the first portion 31 opposite to the second portion 32 .
  • the photoelectric conversion element including the collector electrode having the above conditions was placed in a stainless steel mesh container (hereinafter simply referred to as "container").
  • a thermometer thermocouple
  • a temperature cycle test was performed on the container containing the photoelectric conversion element in a nitrogen atmosphere according to the following procedure. In the following description, Fluorinert is used as a hot bath and liquid nitrogen is used as a cold bath.
  • thermometer thermocouple
  • thermocouple indicated a temperature of 125°C or higher
  • the container was removed from the hot bath and immersed in a -196°C cold bath. The container was then left in a cold bath until the thermocouple indicated a temperature of -195°C or less.
  • thermocouple indicated a temperature of -195°C or lower
  • the container was taken out of the cold bath and immersed in the 135°C hot bath again.
  • the container was then left in a heating bath until the thermocouple indicated a temperature of 125°C or higher.
  • JIS C 8991:2011 specifies the conditions for temperature cycle tests for thin-film solar cell modules installed on the ground. According to JIS C 8991:2011, a temperature cycle test is conducted under the condition that the temperature is changed from -40°C to 85°C for 200 cycles. Therefore, the temperature cycle test performed in the above experiment corresponds to a test that imposes stricter conditions on the photoelectric conversion element than the Japanese Industrial Standard "JIS C 8991:2011".
  • D ⁇ L/W is less than 2.5 ⁇ 10 3 ⁇ m, and may be, for example, 2.4 ⁇ 10 3 ⁇ m or less. According to the results shown in Table 2, if "D ⁇ L/W" is 2.2 ⁇ 10 3 ⁇ m or less, a photoelectric conversion element with high resistance to temperature change can be provided more reliably.
  • the photoelectric conversion element can be mounted on a moving body such as a car or an airplane, or can be used at an altitude of 100 km or more or in space. It can also be suitably used as a photoelectric conversion element for space or artificial satellites used in a harsh environment.
  • the layers constituting the laminate 25 extend from the tip (free end) of the first portion 31 of the current collecting electrode 30 to It was found that peeling started and progressed from the free end. It was found that this peeling occurred at the interface between the Mo(Se,S) 2 layer and the CIS-based light absorption layer.
  • the Mo(Se,S) 2 layer is a layer having a hexagonal crystal structure and having cleavage properties. That is, since the Mo(Se,S) 2 layer is a layer with relatively low strength, it is considered that peeling occurred at the Mo(Se,S) 2 layer.
  • the laminate 30 includes a layer having such a cleavage property
  • the laminate can be obtained by appropriately setting the conditions of the thickness D, the length L, and the width W of the first portion 31 of the collector electrode 30. It can be seen from the temperature cycle test described above that peeling of the layers constituting the body 30 can be suppressed.
  • FIG. 4 is a schematic plan view of a solar cell module including photoelectric conversion elements.
  • a solar cell module 100 may comprise one or more photoelectric conversion elements 10 .
  • FIG. 4 shows a photoelectric conversion module 100 including a plurality of photoelectric conversion elements 10 .
  • One or more photoelectric conversion elements 10 may be sealed, for example, with a sealing material.
  • the plurality of photoelectric conversion elements 10 may be arranged in at least one direction, preferably in a grid pattern. In this case, the plurality of photoelectric conversion elements 10 may be electrically connected in series and/or in parallel with each other.
  • the photoelectric conversion elements 10 are arranged so as to partially overlap each other. Of the photoelectric conversion elements 10 arranged in one direction, adjacent photoelectric conversion elements 10 partially overlap each other. Specifically, as shown in FIG. 4, one photoelectric conversion element 10 may be arranged so as to cover the second portion 32 of the collector electrode 30 of the adjacent photoelectric conversion element 10 . In this case, the photoelectric conversion element 10 is electrically connected to the second portion 32 of the collector electrode 30 of the adjacent photoelectric conversion element 10 .
  • photoelectric conversion elements 10 adjacent to each other may be spaced apart from each other.
  • the photoelectric conversion module 100 includes a conductive interconnector (not shown) that electrically connects the second portion 32 of the collector electrode 30 of a certain photoelectric conversion element 10 and the photoelectric conversion element 10 adjacent thereto. Be prepared.
  • FIG. 5 is a schematic perspective view of an artificial satellite equipped with solar cell modules.
  • Satellite 900 may have a base 910 and a paddle 920 .
  • the base 910 may include devices (not shown) necessary for controlling the satellite 900 and the like.
  • Antenna 940 may be attached to base 910 .
  • the paddle 920 may include the solar cell module 100 described above.
  • the paddle 920 with the solar cell module 100 can be used as a power source for operating various devices provided on the base 910 .
  • the solar cell module 100 can be applied to paddles for artificial satellites.
  • the paddle 920 for a satellite is exposed to a high-temperature environment and a severe temperature-change environment during the launch and operation of the satellite.
  • Preferably module 100 is utilized.
  • the paddle 920 may have a connecting portion 922 and a hinge portion 924 .
  • the connecting portion 922 corresponds to a portion connecting the paddle 920 to the base portion 910 .
  • the hinge portion 924 extends along one direction, and the paddle 920 can be bent around the hinge portion 924 as a rotation axis.
  • Each paddle 920 may have at least one, and preferably multiple hinges 924 .
  • the paddle 920 having the solar cell module 100 is configured to be foldable into a small size.
  • the paddle 920 may be in a folded state when the satellite 900 is launched.
  • the paddle 920 may be deployed when receiving sunlight to generate power.
  • the paddle 920 may have a cylindrical shape formed by winding. This allows the paddle 920 to assume a substantially flat unfolded state by rotation of the wound portion. During launch of satellite 900, paddle 920 may maintain a generally cylindrical shape. The paddle 920 may be deployed so as to be in a substantially flat state when receiving sunlight to generate power.
  • the collector electrode 30 is provided on the second electrode layer 24 .
  • the collector electrode 30 may be provided between the photoelectric conversion layer 26 and the second electrode layer 24 .
  • the second electrode layer 24 is composed of a transparent electrode layer.
  • the first electrode layer 22 may be composed of a transparent electrode layer.
  • the second electrode layer 24 may be composed of a transparent electrode layer or an opaque electrode layer.
  • the first portions 31 of all current collecting electrodes 30 formed on the same photoelectric conversion element have the same length L, width W and thickness D.
  • the plurality of first portions 31 formed on the same photoelectric conversion element may have different lengths L, widths W and thicknesses D from each other. In this case, it is preferable that at least some, preferably all, of the plurality of first portions 31 satisfy the conditions regarding the length L, width W, and thickness D described above.
  • the present invention is not limited to this, and can be applied to a crystalline photoelectric conversion element as much as possible. Even in a crystalline photoelectric conversion element, the effects of thermal stress can be alleviated by setting the conditions for the length L, width W, and thickness D of the first portion 31 of the current collecting electrode 30 as described above. can be done. However, from the viewpoint of suppressing peeling of the laminate 25, it is particularly desirable to apply the present invention to a thin-film type photoelectric conversion element.
  • the first portion 31 of the collector electrode 30 has the protrusion 31a.
  • the first portion 31 of the collector electrode 30 may have a substantially linear shape without the protrusion 31a.
  • the first portion 31 of the collector electrode 30 extends from the second portion 32 in only one direction.
  • the multiple first portions 31 may extend in different directions from the second portion 32 .
  • the multiple first portions 31 may extend in opposite directions.
  • one first portion 31 may extend in a direction that is inclined with respect to another first portion 31 .
  • the second portion 32 of the collector electrode 30 extends straight in the Y direction.
  • the second portion 32 of the current collecting electrode 30 may extend in a wavy or zigzag polygonal line.

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Remote Sensing (AREA)
  • Aviation & Aerospace Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Sustainable Energy (AREA)
PCT/JP2022/022062 2021-05-31 2022-05-31 光電変換素子、太陽電池モジュール及びパドル Ceased WO2022255337A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US18/565,280 US20240258442A1 (en) 2021-05-31 2022-05-31 Photoelectric conversion element, solar cell module, and paddle
CN202280046358.0A CN117581386A (zh) 2021-05-31 2022-05-31 光电转换元件、太阳能电池模块和帆板
JP2023525840A JPWO2022255337A1 (enExample) 2021-05-31 2022-05-31
EP22816083.4A EP4350780A4 (en) 2021-05-31 2022-05-31 PHOTOELECTRIC CONVERSION ELEMENT, SOLAR CELL MODULE AND PADDLE

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021091105 2021-05-31
JP2021-091105 2021-05-31

Publications (1)

Publication Number Publication Date
WO2022255337A1 true WO2022255337A1 (ja) 2022-12-08

Family

ID=84323288

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2022/022062 Ceased WO2022255337A1 (ja) 2021-05-31 2022-05-31 光電変換素子、太陽電池モジュール及びパドル

Country Status (5)

Country Link
US (1) US20240258442A1 (enExample)
EP (1) EP4350780A4 (enExample)
JP (1) JPWO2022255337A1 (enExample)
CN (1) CN117581386A (enExample)
WO (1) WO2022255337A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025541890A (ja) * 2023-11-24 2025-12-23 中建材玻璃新材料研究院集団有限公司 レイヤースタックのターゲット層の上面に細幅の線状構造を作製する方法及びその応用

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005268466A (ja) * 2004-03-18 2005-09-29 Sanyo Electric Co Ltd 光起電力装置
JP2006324504A (ja) * 2005-05-19 2006-11-30 Shin Etsu Handotai Co Ltd 太陽電池
JP2009302274A (ja) 2008-06-13 2009-12-24 Hitachi Maxell Ltd 光発電素子、ｃｉｓ系光発電素子の製造方法
JP2012019094A (ja) * 2010-07-08 2012-01-26 Hitachi High-Technologies Corp 太陽電池モジュール
JP2012119394A (ja) * 2010-11-29 2012-06-21 Sanyo Electric Co Ltd 太陽電池セル及び太陽電池モジュール
JP2013511601A (ja) * 2009-11-20 2013-04-04 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ポリイミドフィルムおよび電極を備えるアセンブリ、ならびにそれに関連する方法
JP2013077706A (ja) * 2011-09-30 2013-04-25 Fujifilm Corp 光電変換素子およびその製造方法
CN111081795A (zh) * 2019-12-31 2020-04-28 中威新能源(成都)有限公司 一种太阳能电池、组件结构及其制备方法
JP2021091105A (ja) 2019-12-06 2021-06-17 ファナック株式会社 射出成形機の制御装置および制御方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100275982A1 (en) * 2007-09-04 2010-11-04 Malcolm Abbott Group iv nanoparticle junctions and devices therefrom
KR101628365B1 (ko) * 2009-06-30 2016-06-08 엘지이노텍 주식회사 태양전지 및 이의 제조방법
JP2011198883A (ja) * 2010-03-18 2011-10-06 Fujifilm Corp 光電変換素子
KR20140015314A (ko) * 2011-01-28 2014-02-06 아사히 가라스 가부시키가이샤 Ｃｕ-Ｉｎ-Ｇａ-Ｓｅ 태양 전지용 유리 기판 및 그것을 사용한 태양 전지
EP2800144A1 (en) * 2013-05-03 2014-11-05 Saint-Gobain Glass France Back contact substrate for a photovoltaic cell or module
JP2017152661A (ja) * 2016-02-26 2017-08-31 凸版印刷株式会社 化合物薄膜太陽電池、化合物薄膜太陽電池の製造方法、および、化合物薄膜太陽電池の検査方法
RU2682836C1 (ru) * 2018-05-29 2019-03-21 Общество с ограниченной ответственностью "Солартек" Способ изготовления светопроницаемого тонкопленочного солнечного модуля на основе халькопирита

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005268466A (ja) * 2004-03-18 2005-09-29 Sanyo Electric Co Ltd 光起電力装置
JP2006324504A (ja) * 2005-05-19 2006-11-30 Shin Etsu Handotai Co Ltd 太陽電池
JP2009302274A (ja) 2008-06-13 2009-12-24 Hitachi Maxell Ltd 光発電素子、ｃｉｓ系光発電素子の製造方法
JP2013511601A (ja) * 2009-11-20 2013-04-04 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ポリイミドフィルムおよび電極を備えるアセンブリ、ならびにそれに関連する方法
JP2012019094A (ja) * 2010-07-08 2012-01-26 Hitachi High-Technologies Corp 太陽電池モジュール
JP2012119394A (ja) * 2010-11-29 2012-06-21 Sanyo Electric Co Ltd 太陽電池セル及び太陽電池モジュール
JP2013077706A (ja) * 2011-09-30 2013-04-25 Fujifilm Corp 光電変換素子およびその製造方法
JP2021091105A (ja) 2019-12-06 2021-06-17 ファナック株式会社 射出成形機の制御装置および制御方法
CN111081795A (zh) * 2019-12-31 2020-04-28 中威新能源(成都)有限公司 一种太阳能电池、组件结构及其制备方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP4350780A4

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025541890A (ja) * 2023-11-24 2025-12-23 中建材玻璃新材料研究院集団有限公司 レイヤースタックのターゲット層の上面に細幅の線状構造を作製する方法及びその応用
JP7855804B2 (ja) 2023-11-24 2026-05-08 中建材玻璃新材料研究院集団有限公司 レイヤースタックのターゲット層の上面に金属グリッド線を作製する方法及びその応用

Also Published As

Publication number Publication date
CN117581386A (zh) 2024-02-20
US20240258442A1 (en) 2024-08-01
EP4350780A4 (en) 2025-06-11
JPWO2022255337A1 (enExample) 2022-12-08
EP4350780A1 (en) 2024-04-10

Similar Documents

Publication Publication Date Title
US8124870B2 (en) Systems and processes for bifacial collection and tandem junctions using a thin-film photovoltaic device
CN106784040A (zh) 一种cigs基薄膜太阳能电池及其制备方法
KR20120063324A (ko) 양면 태양전지
CN102576762A (zh) 光伏系统及其制造方法
EP2426731A2 (en) Solar power generation apparatus and manufacturing method thereof
US20240258442A1 (en) Photoelectric conversion element, solar cell module, and paddle
EP4354516A1 (en) Photoelectric conversion element, manufacturing method for photoelectric conversion element, solar battery module, and paddle
KR101428146B1 (ko) 태양전지 모듈 및 이의 제조방법
KR101592582B1 (ko) 태양전지 및 이의 제조방법
JP5624153B2 (ja) 太陽電池及びその製造方法
US12532550B2 (en) Photoelectric conversion module, paddle, and method for manufacturing photoelectric conversion module
US20160225928A1 (en) Systems and processes for bifacial collection and tandem junctions using a thin-film photovoltaic device
EP2608273A2 (en) Solar cell having a pn hetero-junction
EP4365959A1 (en) Photoelectric conversion element and method for manufacturing photoelectric conversion element
EP4693418A1 (en) Photoelectric conversion element, photovoltaic module, flying object and method for manufacturing photoelectric conversion element
US20260136681A1 (en) Photoelectric conversion module and manufacturing method for photoelectric conversion module
US20250234656A1 (en) Photoelectric conversion module, paddle, and method for manufacturing photoelectric conversion module
EP4425577A1 (en) Photoelectric conversion module, paddle, and method for manufacturing photoelectric conversion module
US9349901B2 (en) Solar cell apparatus and method of fabricating the same
KR20120090396A (ko) 태양전지 및 이의 제조방법
WO2024080262A1 (ja) インターコネクタ、光電変換モジュール及びパドル
WO2023120614A1 (ja) 光電変換素子、太陽電池モジュール、パドル及び光電変換素子の製造方法
KR101601275B1 (ko) 태양광 발전장치 및 이의 제조방법
KR101072116B1 (ko) 태양전지 및 이의 제조방법
KR20130117258A (ko) 태양전지 및 이의 제조방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22816083

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2023525840

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 18565280

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 202280046358.0

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 2022816083

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2022816083

Country of ref document: EP

Effective date: 20240102