WO2022254579A1 - めっき装置およびめっき方法 - Google Patents
めっき装置およびめっき方法 Download PDFInfo
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- WO2022254579A1 WO2022254579A1 PCT/JP2021/020855 JP2021020855W WO2022254579A1 WO 2022254579 A1 WO2022254579 A1 WO 2022254579A1 JP 2021020855 W JP2021020855 W JP 2021020855W WO 2022254579 A1 WO2022254579 A1 WO 2022254579A1
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- 238000007747 plating Methods 0.000 title claims abstract description 168
- 238000000034 method Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 186
- 150000002500 ions Chemical class 0.000 claims description 4
- 239000008151 electrolyte solution Substances 0.000 claims description 3
- 239000003792 electrolyte Substances 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 6
- 230000000116 mitigating effect Effects 0.000 abstract 1
- 238000005192 partition Methods 0.000 description 23
- 101150062523 bath-39 gene Proteins 0.000 description 22
- 239000000243 solution Substances 0.000 description 18
- 238000010586 diagram Methods 0.000 description 16
- 238000004140 cleaning Methods 0.000 description 12
- 238000012545 processing Methods 0.000 description 9
- 230000010287 polarization Effects 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 230000032258 transport Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 238000007781 pre-processing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 101100165186 Caenorhabditis elegans bath-34 gene Proteins 0.000 description 1
- 101100493705 Caenorhabditis elegans bath-36 gene Proteins 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000010349 cathodic reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
- C25D17/08—Supporting racks, i.e. not for suspending
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/002—Cell separation, e.g. membranes, diaphragms
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/007—Current directing devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/008—Current shielding devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/02—Tanks; Installations therefor
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
- C25D17/12—Shape or form
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
Definitions
- the present invention relates to a plating apparatus and a plating method, and more specifically to a technique for uniformizing the plating film thickness.
- a metal plating film such as Cu is formed on the surface of semiconductor devices and substrates for electronic devices.
- a substrate to be plated is held in a substrate holder, and electroplating is performed by immersing the substrate together with the substrate holder in a plating bath containing a plating solution.
- the substrate holder holds the substrate so that the plated surface of the substrate is exposed.
- An anode is placed in the plating solution so as to correspond to the exposed surface of the substrate, and a voltage can be applied between the substrate and the anode to form an electroplated film on the exposed surface of the substrate.
- board holders that have openings on both the front and back sides for plating on both sides of the board.
- a substrate holder that holds a single substrate so that both the front and back surfaces of the substrate are exposed.
- Patent Literature 1 discloses a plating apparatus configured to shield such electric field wraparound using a physical/mechanical structure.
- One object of the present disclosure is to provide a plating apparatus and a plating method that prevent or mitigate electric field wraparound without relying on physical and mechanical structures.
- a substrate holder configured to hold a substrate
- a plating bath configured to accommodate the substrate holder holding the substrate, wherein a plating bath provided with a first bath and a second bath on the second surface side of the substrate, wherein the first bath and the second bath communicate with each other through a gap; and a plating bath arranged in the first bath of the plating bath.
- a plating apparatus comprising: an auxiliary cathode electrode arranged on the second tank side of the gap; and an auxiliary power source configured to supply an auxiliary current between the auxiliary anode electrode and the auxiliary cathode electrode.
- FIG. 1 is an overall layout diagram of a plating apparatus according to an embodiment of the present invention
- FIG. 1 is a schematic diagram showing the configuration of one plating bath according to one embodiment of the present invention
- FIG. 1 is a schematic diagram showing the configuration of one plating bath according to one embodiment of the present invention
- FIG. 1 is a schematic diagram showing the configuration of one plating bath according to one embodiment of the present invention
- FIG. 3 is a diagram schematically showing a plating current flowing in a plating bath according to one embodiment of the present invention
- FIG. 3 is a diagram schematically showing plating current and auxiliary current flowing in the plating tank according to one embodiment of the present invention
- It is a figure showing the equivalent circuit of the plating tank concerning one embodiment of the present invention.
- FIG. 1 is a diagram showing one configuration example of a portion including a partition wall and a gap in a plating tank according to one embodiment of the present invention
- FIG. FIG. 4 is a diagram showing another configuration example of a portion including partition walls and gaps in the plating bath according to one embodiment of the present invention
- FIG. 1 is an overall layout diagram of a plating apparatus 100 according to one embodiment of the present invention.
- the plating apparatus 100 is roughly divided into a load/unload module 110 that loads a substrate onto or unloads a substrate from a substrate holder (not shown), a processing module 120 that processes the substrate, and a cleaning module 50a. be done.
- the processing module 120 further includes a pre-processing/post-processing module 120A that performs pre-processing and post-processing of the substrate, and a plating processing module 120B that performs plating processing on the substrate.
- the load/unload module 110 has a handling stage 26 , a substrate transfer device 27 and a fixing station 29 .
- the load/unload module 110 has two handling stages, a handling stage 26A for loading a substrate before processing and a handling stage 26B for unloading a substrate after processing. 26.
- the handling stage 26A for loading and the handling stage 26B for unloading have the same configuration, and are arranged with 180° orientations different from each other.
- the handling stage 26 is not limited to the one provided with the handling stages 26A and 26B for loading and unloading, and may be used without distinguishing between the handling stages 26A and 26B for loading and unloading.
- the load/unload module 110 has two fixing stations 29 .
- the two fixing stations 29 have the same mechanism, and the free one (the one not handling substrates) is used.
- One handling stage 26 and one fixing station 29 or three or more fixing stations 29 may be provided depending on the space in the plating apparatus 100 .
- Substrates are transferred from a plurality of cassette tables 25 (three in FIG. 1 as an example) to the handling stage 26 (handling stage 26A for loading) through the robot 24 .
- the cassette table 25 includes a cassette 25a in which substrates are accommodated.
- a cassette is, for example, a hoop.
- the handling stage 26 is configured to adjust (align) the position and orientation of the mounted substrate.
- a substrate transfer device 27 is arranged for transferring the substrate therebetween.
- the substrate transport apparatus 27 is configured to transport substrates between the handling stage 26, the fixing station 29 and the cleaning module 50a.
- a stocker 30 for storing substrate holders is provided near the fixing station 29 .
- the cleaning module 50a has a cleaning device 50 that cleans and dries the plated substrate.
- the substrate transfer device 27 is configured to transfer the plated substrate to the cleaning device 50 and take out the cleaned substrate from the cleaning device 50 .
- the substrate after cleaning is transferred to the handling stage 26 (handling stage 26B for unloading) by the substrate transfer device 27 and returned to the cassette 25a through the robot 24.
- the pre-treatment/post-treatment module 120A has a pre-wet tank 32, a pre-soak tank 33, a pre-rinse tank 34, a blow tank 35, and a rinse tank 36.
- the pre-wet tank 32 the substrate is immersed in pure water.
- the oxide film on the surface of the conductive layer such as the seed layer formed on the surface of the substrate is removed by etching.
- the pre-rinse tank 34 the pre-soaked substrate is washed with a cleaning liquid (pure water or the like) together with the substrate holder.
- a cleaning liquid pure water or the like
- the substrate after plating is washed with a washing liquid together with the substrate holder.
- the configuration of the pretreatment/posttreatment module 120A of the plating apparatus 100 is an example, and the configuration of the pretreatment/posttreatment module 120A of the plating apparatus 100 is not limited, and other configurations can be adopted. .
- the plating processing module 120B is configured, for example, by housing a plurality of plating tanks 39 inside the overflow tank 38 .
- Each plating bath 39 accommodates one substrate therein and is configured to immerse the substrate in the plating solution held therein to apply plating such as copper plating to the surface of the substrate.
- the plating apparatus 100 has a transporter 37 employing, for example, a linear motor system, which is positioned to the side of the pretreatment/posttreatment module 120A and the plating module 120B and transports the substrate holder together with the substrate.
- the transporter 37 is configured to transport substrate holders between the fixing station 29 , the stocker 30 , the pre-wet bath 32 , the pre-soak bath 33 , the pre-rinse bath 34 , the blow bath 35 , the rinse bath 36 and the plating bath 39 . be.
- one substrate is taken out by the robot 24 from the cassette 25a mounted on the cassette table 25, and the substrate is transferred to the handling stage 26 (handling stage 26A for loading).
- the handling stage 26 adjusts the position and orientation of the transported substrate to a predetermined position and orientation.
- the substrate whose position and orientation are adjusted by the handling stage 26 is transported to the fixing station 29 by the substrate transport device 27 .
- the substrate holder stored in the stocker 30 is transported to the fixing station 29 by the transporter 37 and placed horizontally on the fixing station 29 . Then, the substrate conveyed by the substrate conveying device 27 is placed on the substrate holder in this state, and the substrate and the substrate holder are connected.
- the substrate holder holding the substrate is gripped by the transporter 37 and stored in the pre-wet bath 32 .
- the substrate holder holding the substrate processed in the pre-wet bath 32 is transported to the pre-soak bath 33 by the transporter 37, and the oxide film on the substrate is etched in the pre-soak bath 33.
- the substrate holder holding this substrate is transferred to the pre-rinse tank 34, and the surface of the substrate is washed with pure water stored in this pre-rinse tank 34.
- the substrate holder holding the washed substrate is transported from the pre-rinse tank 34 to the plating module 120B by the transporter 37 and stored in the plating tank 39 filled with the plating solution.
- the transporter 37 sequentially repeats the above-described procedure, and sequentially stores the substrate holders holding the substrates in the plating tanks 39 of the plating processing modules 120B.
- each plating tank 39 the surface of the substrate is plated by applying a plating voltage between the anode (not shown) in the plating tank 39 and the substrate.
- the substrate holder holding the plated substrate is gripped by the transporter 37, transported to the rinsing tank 36, and immersed in the pure water contained in the rinsing tank 36 to wash the surface of the substrate with pure water. do.
- the substrate holder is transported to the blow tank 35 by the transporter 37, and water droplets adhering to the substrate holder are removed by blowing air or the like.
- the substrate holder is then transported to fixing station 29 by transporter 37 .
- the substrate after processing is taken out from the substrate holder by the substrate transfer device 27 and transferred to the cleaning device 50 of the cleaning module 50a.
- the cleaning device 50 cleans and dries the plated substrate.
- the dried substrate is transferred to the handling stage 26 (handling stage 26B for unloading) by the substrate transfer device 27 and returned to the cassette 25a through the robot 24.
- FIGS. 2 to 4 are schematic diagrams showing the configuration of one plating tank 39 in the plating module 120B.
- 3 shows the plating bath 39 cut along the plane AA in FIG. 2 and viewed from the direction of the arrow A
- FIG. 4 shows the plating bath 39 cut along the plane BB in FIG. 2 and viewed from the direction of the arrow B. showing the situation.
- Each plating bath 39 in the plating module 120B has the same configuration as shown in FIGS. 2-4.
- the substrate holder 30 holding the substrate W is transported by the transporter 37 (see FIG. 1) and accommodated in the plating tank 39.
- the substrate W and the substrate holder 30 are immersed in a plating solution (electrolytic solution) Q.
- a plating solution electrolytic solution
- FIG. A horizontal line QS shown in FIGS. 3 and 4 represents the liquid level of the plating solution Q.
- FIG. A partition wall 39 a is provided on the inner wall and inner bottom of the plating bath 39 so as to be parallel to the surface of the substrate W and to form the same plane as the substrate W and the substrate holder 30 .
- the partition wall 39a is integral with the substrate W and the substrate holder 30, and partitions the inside of the plating bath 39 into two parts, ie, a first bath 39-1 and a second bath 39-2.
- One end of the partition 39a is connected to the inner wall and inner bottom of the plating bath 39 (for example, the partition 39a and the inner wall and inner bottom of the plating bath 39 are connected without gaps).
- a gap GP exists between the opposite end of the partition wall 39 a and the outer periphery of the substrate holder 30 .
- the substrate holder 30 is supported or suspended by a support mechanism (not shown) so as not to come into contact with the partition wall 39a, thereby forming a gap GP across the entire circumference of the substrate holder 30 as shown in FIGS.
- the partition wall 39a may have a shape that partially contacts the substrate holder 30, in which case the gap GP is partially formed around the outer periphery of the substrate holder 30.
- the first bath 39-1 and the second bath 39-2 of the plating bath 39 are not completely isolated from each other. do not have.
- the first bath 39-1 of the plating bath 39 communicates with the second bath 39-2 through the gap GP, whereby the plating solution Q and the ions contained in the plating solution Q flow through the gap GP. It can move between the first tank 39-1 and the second tank 39-2 through the GP.
- a first anode electrode 221 held by an anode holder (not shown) is arranged in the first bath 39-1 of the plating bath 39.
- the first anode electrode 221 is electrically connected to the positive electrode of the first power supply 231, and the negative electrode of the first power supply 231 is connected to the surface of the substrate W facing the first tank 39-1 (hereinafter referred to as the first surface W1). ) are electrically connected.
- a conductive material such as a seed layer may be formed on the first surface W1 of the substrate W.
- the first power supply 231 is configured to supply a plating current between the first anode electrode 221 and the first surface W1 of the substrate W. As shown in FIG.
- a second anode electrode 222 held by an anode holder (not shown) is arranged.
- the second anode electrode 222 is electrically connected to the positive electrode of the second power source 232, and the negative electrode of the second power source 232 is connected to the surface of the substrate W facing the second tank 39-2 (hereinafter referred to as the second surface W2).
- a conductive material such as a seed layer may be formed on the second surface W2 of the substrate W.
- the second power supply 232 is configured to supply a plating current between the second anode electrode 222 and the second surface W2 of the substrate W. As shown in FIG.
- FIG. 5 is a diagram schematically showing plating currents flowing in the plating solution Q in the first tank 39-1 and the second tank 39-2 of the plating tank 39.
- a plating current flows from the first anode electrode 221 toward the first surface W1 of the substrate W as indicated by the arrow IQ1.
- a plating current flows toward the second surface W2 of the substrate W as indicated by an arrow IQ2.
- a current path may be formed in the plating bath 39 through which current flows through the gap GP between the substrate holder 30 and the partition wall 39 a of the plating bath 39 .
- the first tank 39 A current is generated that flows from the -1 side to the second tank 39-2 side through the gap GP. If the magnitude relationship of the current densities is reversed, the current will leak from the second tank 39-2 to the first tank 39-1, contrary to FIG. will be explained.
- the plating apparatus 100 includes an auxiliary anode electrode 241 and an auxiliary cathode electrode 242 in the plating bath 39 in order to reduce or prevent the above-described current from entering.
- the auxiliary anode electrode 241 is provided in the vicinity of the gap GP and on the surface of the partition wall 39a on the first tank 39-1 side. 2 and 4, the auxiliary cathode electrode 242 is provided near the gap GP on the surface of the partition wall 39a on the second tank 39-2 side.
- the auxiliary anode electrode 241 and the auxiliary cathode electrode 242 may be arranged along the entire circumference of the gap GP formed between the substrate holder 30 and the partition wall 39a.
- auxiliary anode electrode 241 and the auxiliary cathode electrode 242 may be arranged, for example, along only a portion of the gap GP, or may be arranged in multiple positions along the gap GP. It may be divided and arranged.
- the auxiliary anode electrode 241 is electrically connected to the positive electrode of the auxiliary power source 243
- the auxiliary cathode electrode 242 is electrically connected to the negative electrode of the auxiliary power source 243 .
- the auxiliary power supply 243 is configured to supply an auxiliary current between the auxiliary anode electrode 241 and the auxiliary cathode electrode 242 via the gap GP.
- FIG. 6 is a diagram schematically showing the plating current (see FIG. 5) flowing in the plating tank 39 and the auxiliary current. At the gap GP portion of , it flows from the first tank 39-1 side toward the second tank 39-2 side (arrow IQ3).
- the auxiliary current also flows from the auxiliary anode electrode 241 toward the first surface W1 of the substrate W (arrow IQ31) and from the second anode electrode 222 toward the auxiliary cathode electrode 242 (arrow IQ32). flow. Since the directions of the components IQ31 and IQ32 of the auxiliary current are opposite to the direction of the wraparound component IQ12 of the plating current, they weaken or cancel each other, so that the current flows from the first tank 39-1 to the second tank 39-2. net current flow (ie, plating current wraparound) can be reduced or prevented.
- the optimum magnitude of the auxiliary current capable of canceling the plating current flowing through the gap GP from the first bath 39-1 to the second bath 39-2 of the plating bath 39 will be described below.
- FIG. 7 and 8 are diagrams showing equivalent circuits of the plating bath 39 in the plating apparatus 100 according to this embodiment.
- This equivalent circuit shows the relationship of how the elements shown in FIG. 2 are electrically connected together.
- FIG. 7 is an equivalent circuit drawn by omitting some elements involved in the auxiliary current for convenience of explanation and understanding, while FIG. Equivalent circuit.
- R A1 is the polarization resistance of the first anode electrode 221
- R E1 is the resistance of the plating solution Q between the first anode electrode 221 and the first surface W1 of the substrate W
- R C1 is the polarization resistance on the surface W1 (that is, the cathode)
- R S1 is the resistance of the first surface W1 of the substrate W (for example, of the seed layer)
- the gap GP from the opening on the side of the first tank 39-1 to the second tank 39-2.
- R IC is the resistance of the plating solution Q up to the side opening
- R IS is the internal connection resistance (for example, via via) connecting the first surface W1 and the second surface W2 of the substrate W
- R A2 is the polarization resistance at the second anode electrode 222.
- the resistance of the plating solution Q between the second anode electrode 222 and the second surface W2 of the substrate W is R E2
- the polarization resistance at the second surface W2 (that is, the cathode) of the substrate W is R C2
- R S2 be the resistance of surface W2 (eg, of the seed layer).
- the output current from the first power supply 231 is I 1 and I 1
- the current flowing to the first surface W1 of the substrate W is I 1-1
- the current flowing to the first surface W1 of I 1 is the second tank 39-2 side through the gap GP.
- I 1-2 is the current flowing to the second power supply 232
- I 2 is the output current from the second power supply 232
- I 2-1 is the current flowing to the second surface W2 of the substrate W from I 2
- I 2 is the current flowing through the gap GP from the gap GP.
- the current flowing to the first tank 39-1 is assumed to be I2-2 .
- I 1 I 1-1 +I 1-2
- I 2 I 2-1 +I 2-2 .
- V C1 V C2 +(R IC +R IS ) ⁇ (I 1-2 -I 2-2 ) (1)
- V C1 and V C2 are the overvoltages of the cathodic reaction (reduction reaction) on the first surface W1 and the second surface W2 of the substrate W, respectively, and the relationship V C1 >V C2 is assumed.
- the overvoltage is small , the overvoltage is proportional to the current .
- the auxiliary current I aux is supplied from the auxiliary power supply 243 through the auxiliary anode electrode 241 and the auxiliary cathode electrode 242 .
- I aux the current flowing from the auxiliary anode electrode 241 to the first surface W1 of the substrate W
- I aux-2 the current flowing from the auxiliary anode electrode 241 to the second tank 39-2 through the gap GP.
- I aux I aux-1 +I aux-2 .
- the current flowing from the first tank 39-1 to the gap GP can be expressed as I 1-2 -I 2-2 -I aux-1.
- the auxiliary current I aux such that equation (3) is satisfied, i.e., the difference between the overvoltage V C1 on the first surface W1 of the substrate W and the overvoltage V C2 on the second surface W2 of the substrate W, the auxiliary anode
- the auxiliary current I aux By setting the auxiliary current I aux to a value obtained by dividing the resistance value R IC between the electrode 241 and the auxiliary cathode electrode 242, the plating current passes through the gap GP from the first tank 39-1 side to the second tank 39-2. You can prevent it from going around.
- the optimum value of the auxiliary current I aux that can prevent the plating current from leaking is expressed as (V C1 -V C2 )/R IC .
- Formula (3) indicates the optimum value of the auxiliary current I aux , but even if the auxiliary current deviates slightly from this optimum value, it is possible to reduce the wraparound of the plating current to a certain extent.
- the values of the overvoltage V C1 on the first surface W1 and the overvoltage V C2 on the second surface W2 of the substrate W are set near the first surface W1 and the second surface W2 of the substrate W, respectively.
- a reference electrode potential measurement probe
- the equilibrium potential when no plating current is applied and the potential during the reaction when plating current is applied are measured, and the potential difference can be obtained.
- the values obtained by measuring the potential on the test board in advance may be permanently used thereafter, or the potential may be applied to the actual product board in real time. The measurements may be used to calculate the momentary overvoltages V C1 and V C2 and use them to adjust the auxiliary current I aux in real time.
- the resistance value RIC between the auxiliary anode electrode 241 and the auxiliary cathode electrode 242 in Equation (3) can be calculated using the dimension of the gap GP and the conductivity of the plating solution Q, for example.
- Equation (3) can be transformed as follows.
- R p1 and R p2 are polarization resistances per unit area
- i 1 and i 2 are current densities.
- Equation (4′) becomes as follows.
- I aux R p /R IC ⁇ (i 1 -i 2 ) (5)
- the optimum value of the auxiliary current I aux can be determined from the measured values of the currents I 1 , I 2 or the current densities i 1 , i 2 .
- the values of the polarization resistances R C1 , R C2 , and R p can be derived, for example, from an IV curve previously obtained by measurement using a reference electrode.
- the output of the second power supply 232 may simply be stopped, or the second power supply 232 and the second anode electrode 222 themselves may be omitted from the plating bath 39 .
- the plating apparatus 100 according to this embodiment can also be applied to plating only one surface (first surface W1) of the substrate W in this way.
- 10 to 12 are diagrams showing equivalent circuits of the plating bath 39 when the output current from the second power supply 232 is zero, and correspond to FIGS. 7 to 9, respectively.
- the above equations (1), (2), (3), (4), and (5) become the following equations (6), (7), (8), (9), and (10), respectively.
- V C1 V C2 +(R IC +R IS ) ⁇ I 1-2 (6)
- I 1-2 I aux-1 (7)
- V C1 R IC ⁇ I aux (8)
- I aux R C1 ⁇ I 1 /R IC (9)
- I aux R p1 /R IC ⁇ i 1 (10)
- FIG. 13 is a diagram showing a configuration example of a portion including the partition wall 39a and the gap GP in the plating tank 39 of the plating apparatus 100 according to this embodiment.
- the auxiliary anode electrode 241 and the auxiliary cathode electrode 242 are housed in the recess of the partition wall 39a and fixed to the bus bar 245.
- a diaphragm 246 is provided in the recess of the partition wall 39a, and the diaphragm 246 separates the inside of the recess accommodating the auxiliary anode electrode 241 and the auxiliary cathode electrode 242 from the first tank 39-1 and the second tank of the plating tank 39. 39-2 is partitioned off.
- the diaphragm 246 is a membrane having a function of selectively allowing specific ions to pass therethrough.
- the auxiliary anode electrode 241 and the auxiliary cathode electrode 242 are separated from the first tank 39-1 and the second tank 39-2 by the diaphragm 246, the auxiliary anode electrode 241 and the auxiliary cathode electrode 242 are soluble electrodes. In this case, metal ions or fine particles eluted from the electrodes can be prevented from diffusing into the first tank 39-1 and the second tank 39-2.
- the auxiliary anode electrode 241 is an insoluble electrode, active oxygen generated in the auxiliary anode electrode 241 can be suppressed from diffusing into the first tank 39-1.
- the liquid filling the inside of the recess may be an electrolytic solution different from the plating solution Q.
- metal deposition on the auxiliary cathode electrode 242 can be suppressed or prevented.
- the plating solution Q contains an additive, it is possible to prevent the additive from moving toward the auxiliary anode electrode 241 or the auxiliary cathode electrode 242 and decomposing on the electrode surface.
- FIG. 14 is a diagram showing another configuration example of the portion including the partition wall 39a and the gap GP in the plating tank 39 of the plating apparatus 100 according to this embodiment.
- the substrate holder 30 is configured to have a convex portion on the surface facing the partition wall 39a
- the partition wall 39a of the plating tank 39 is configured to have a concave portion on the surface facing the substrate holder 30.
- a gap GP between the substrate holder 30 and the partition wall 39a is bent between the first tank 39-1 and the second tank 39-2 of the plating bath 39 by combining the convex portion of the substrate holder 30 and the concave portion of the partition wall 39a. It forms a passageway.
- the migration distance of ions between the first tank 39-1 and the second tank 39-2 is increased, so that the resistance value RIC of the plating solution Q within the gap GP is increased.
- the optimal value of the auxiliary current I aux that can prevent the plating current from sneaking around is inversely proportional to R IC .
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Abstract
Description
VC1=VC2+(RIC+RIS)・(I1-2-I2-2) ……(1)
I1-2-I2-2=Iaux-1 ……(2)
VC1-VC2=RIC・Iaux ……(3)
Iaux=(RC1・I1-RC2・I2)/RIC ……(4)
=(Rp1・i1-Rp2・i2)/RIC ……(4’)
Iaux=Rp/RIC・(i1-i2) ……(5)
VC1=VC2+(RIC+RIS)・I1-2 ……(6)
I1-2=Iaux-1 ……(7)
VC1=RIC・Iaux ……(8)
Iaux=RC1・I1/RIC ……(9)
Iaux=Rp1/RIC・i1 ……(10)
Claims (11)
- 基板を保持するように構成された基板ホルダと、
前記基板を保持した前記基板ホルダを収容するように構成されためっき槽であって、前記基板の第1面側の第1槽と前記基板の第2面側の第2槽を備え、前記第1槽と前記第2槽はギャップを介して連通する、めっき槽と、
前記めっき槽の前記第1槽に配置された第1アノード電極と、
前記基板と前記第1アノード電極の間にめっき電流を供給するように構成された第1電源と、
前記ギャップの前記第1槽側に配置された補助アノード電極と、
前記ギャップの前記第2槽側に配置された補助カソード電極と、
前記補助アノード電極と前記補助カソード電極の間に補助電流を供給するように構成された補助電源と、
を備えるめっき装置。 - 前記補助電流は、前記基板の前記第1面における過電圧を、前記補助アノード電極と前記補助カソード電極の間の電解液の抵抗値で除した電流値に設定される、請求項1に記載のめっき装置。
- 前記めっき槽の前記第2槽に配置された第2アノード電極と、
前記基板と前記第2アノード電極の間にめっき電流を供給するように構成された第2電源であって、前記第2電源からの電流は、前記基板の前記第2面における過電圧が前記基板の前記第1面における過電圧よりも小さくなるように設定される、第2電源と、
をさらに備える、請求項1に記載のめっき装置。 - 前記補助電流は、前記基板の前記第1面における過電圧と前記基板の前記第2面における過電圧との差を、前記補助アノード電極と前記補助カソード電極の間の電解液の抵抗値で除した電流値に設定される、請求項3に記載のめっき装置。
- 前記基板の前記第1面近傍に配置された、前記基板の前記第1面における過電圧を計測するための第1参照電極と、
前記基板の前記第2面近傍に配置された、前記基板の前記第2面における過電圧を計測するための第2参照電極と、
をさらに備え、前記補助電流は、前記第1参照電極を用いて計測された過電圧と前記第2参照電極を用いて計測された過電圧に基づいて制御される、
請求項4に記載のめっき装置。 - 前記補助電流は、前記第1電源から供給される電流の測定値と前記第2電源から供給される電流の測定値に基づいて制御される、請求項4に記載のめっき装置。
- 前記補助電流は、前記基板の前記第1面における電流密度と前記基板の前記第2面における電流密度との差に基づいて制御される、請求項6に記載のめっき装置。
- 前記補助アノード電極と前記めっき槽の前記第1槽の間および前記補助カソード電極と前記めっき槽の前記第2槽の間に、イオンを選択的に透過させるように構成された隔膜を備える、請求項1から7のいずれか1項に記載のめっき装置。
- 前記ギャップは、屈曲した通路によって前記第1槽と前記第2槽を連通する、請求項1から8のいずれか1項に記載のめっき装置。
- 前記基板は前記第1面と前記第2面が導通した基板である、請求項1から9のいずれか1項に記載のめっき装置。
- めっき装置において基板をめっきするための方法であって、
前記めっき装置は、
前記基板を保持するように構成された基板ホルダと、
前記基板を保持した前記基板ホルダを収容するように構成されためっき槽であって、前記基板の第1面側の第1槽と前記基板の第2面側の第2槽を備え、前記第1槽と前記第2槽はギャップを介して連通する、めっき槽と、
を備え、前記方法は、
前記めっき槽の前記第1槽に配置された第1アノード電極と前記基板との間に、第1電源からめっき電流を供給すること、および
前記ギャップの前記第1槽側に配置された補助アノード電極と前記ギャップの前記第2槽側に配置された補助カソード電極との間に、補助電源から補助電流を供給すること
を含む、方法。
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JP2007308783A (ja) * | 2006-05-22 | 2007-11-29 | Matsushita Electric Ind Co Ltd | 電気めっき装置およびその方法 |
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