WO2022213463A1 - 显示装置及其制备方法 - Google Patents

显示装置及其制备方法 Download PDF

Info

Publication number
WO2022213463A1
WO2022213463A1 PCT/CN2021/096612 CN2021096612W WO2022213463A1 WO 2022213463 A1 WO2022213463 A1 WO 2022213463A1 CN 2021096612 W CN2021096612 W CN 2021096612W WO 2022213463 A1 WO2022213463 A1 WO 2022213463A1
Authority
WO
WIPO (PCT)
Prior art keywords
additional
layer
display device
substrate
disposed
Prior art date
Application number
PCT/CN2021/096612
Other languages
English (en)
French (fr)
Inventor
王海军
Original Assignee
深圳市华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Priority to US17/419,115 priority Critical patent/US20240030224A1/en
Publication of WO2022213463A1 publication Critical patent/WO2022213463A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Definitions

  • the present application relates to the field of display technology, and in particular, to a display device and a preparation method thereof.
  • the photosensitive transistor with sensing function and the display transistor with display function are usually prepared on the substrate by the same process and process.
  • the photosensitive transistor and display transistor prepared by the same process The formed active layer can only be the same type of active layer, and cannot simultaneously realize the high sensing function required by the photosensitive transistor and the high mobility function required by the display transistor.
  • the commonly used active layer materials are amorphous silicon, indium gallium zinc oxide and polycrystalline silicon.
  • the active layer formed by amorphous silicon has good photosensitive effect, that is, it receives laser irradiation and generates high signal intensity, but its mobility is relatively low. Low, that is, the corresponding display transistor cannot meet the requirements of high refresh rate and large size display.
  • the active layer formed by using indium gallium zinc oxide has high mobility and can be widely used in large-size displays with high refresh rate, it receives laser irradiation and generates weak signal intensity.
  • Embodiments of the present application provide a display device and a manufacturing method thereof, so as to solve the problem of weak signal intensity generated by light-sensing of the display device in the prior art.
  • the present application provides a display device, which includes:
  • the substrate layer includes a first substrate region and a second substrate region disposed adjacent to the first substrate region;
  • the gate layer is disposed on the substrate layer, the gate layer includes a first gate part and a second gate part, and the first gate part is located in the first substrate region on the second gate portion on the second substrate region;
  • the active layer includes a first body part, a second body part and an additional part, the first body part is disposed on the first substrate region and the first gate part, the additional part provided on the first body part, the second body part is provided on the second substrate region and the second gate part, the first body part and the additional part and the second body The parts are not connected, wherein the band gap of the additional part is smaller than the band gap of the first body part and the second body part.
  • the additional part includes several first additional sub-parts, and every two adjacent first additional sub-parts are not connected to each other.
  • the additional part further includes a second additional sub-part, the second additional sub-part is disposed on the first body part, and the first additional sub-part arranged on the second additional sub-section.
  • a surface of the first additional subsection is provided with a first microstructure.
  • the additional portion includes a first additional sub-portion
  • the first body portion includes a first active region and a second active region disposed around the first active region an active region, the first additional subsection is disposed in the second active region.
  • the additional portion includes a first additional sub-portion
  • the first body portion includes a first active region and a second active region disposed around the first active region an active region
  • the first additional sub-section is disposed in the first active region and the second active region
  • the thickness of the first additional sub-section of the second active region is greater than that of the first active region Thickness of the first additional subsection of the source region.
  • the display device further includes a first insulating layer.
  • the first insulating layer covers the substrate layer and the gate layer.
  • the embodiment of the present application also provides a display device, which includes:
  • the substrate layer including a first substrate region and a second substrate region disposed adjacent to the first substrate region;
  • the active layer including a first body portion, a second body portion, and an additional portion, the first body portion being disposed on the first substrate region, the additional portion being disposed on the first On the body part, the second body part is disposed on the second substrate region, the first body part and the additional part are not connected with the second body part, wherein the belt of the additional part is The gap is smaller than the band gap of the first body portion and the second body portion.
  • the additional part includes several first additional sub-parts, and every two adjacent first additional sub-parts are not connected to each other.
  • the additional part further includes a second additional sub-part, the second additional sub-part is disposed on the first body part, and the first additional sub-part arranged on the second additional sub-section.
  • a surface of the first additional subsection is provided with a first microstructure.
  • the additional portion includes a first additional sub-portion
  • the first body portion includes a first active region and a second active region disposed around the first active region an active region, the first additional subsection is disposed in the second active region.
  • the additional portion includes a first additional sub-portion
  • the first body portion includes a first active region and a second active region disposed around the first active region an active region
  • the first additional sub-section is disposed in the first active region and the second active region
  • the thickness of the first additional sub-section of the second active region is greater than that of the first active region Thickness of the first additional subsection of the source region.
  • the display device further includes a first insulating layer, and the first insulating layer covers the substrate layer and the gate layer.
  • an embodiment of the present application also provides a method for preparing a display device, which includes:
  • a substrate layer including a first substrate region and a second substrate region disposed adjacent to the first substrate region;
  • An active layer is formed on the substrate layer, the active layer includes a first body portion, a second body portion and an additional portion, the first body portion is disposed on the first substrate region, the additional portion The first body portion is disposed on the first body portion, the second body portion is disposed on the second substrate region, the first body portion and the additional portion are not connected to the second body portion, wherein , the band gap of the additional part is smaller than the band gap of the first body part and the second body part.
  • the step of forming an active layer on the substrate layer includes:
  • the additional portion material is etched to form the additional portion.
  • the step of etching the additional portion material to form the additional portion includes:
  • the second protective layer is removed.
  • the method further includes:
  • the additional portion is etched to form an additional portion including a first additional sub-portion and a second additional sub-portion, wherein the second additional sub-portion is provided on the first body portion, and the first additional sub-portion is formed.
  • a subsection is provided on the second additional subsection.
  • the substrate layer after the step of providing a substrate layer, the substrate layer includes a first substrate region and a second substrate region disposed adjacent to the first substrate region , before the step of forming the active layer on the substrate layer, further comprising:
  • a gate layer is formed on the substrate layer, the gate layer includes a first gate part and a second gate part, the first gate part is located on the first substrate region, and the second gate part A pole portion is located on the second substrate region.
  • the distance between every two adjacent first additional subsections is 1 nanometer to 5000 nanometers.
  • the embodiment of the present application discloses a display device and a preparation method thereof, the display device includes a substrate layer and an active layer, the substrate layer includes a first substrate region and a second substrate region disposed adjacent to the first substrate region,
  • the active layer includes a first body part, a second body part and an additional part, the first body part is provided on the first substrate region, the additional part is provided on the first body part,
  • the second body portion is disposed on the second substrate region, the first body portion and the additional portion are not connected to the second body portion, wherein the band gap of the additional portion is smaller than the band gap of the additional portion Band gaps of the first body portion and the second body portion.
  • the band gap of the active layer is reduced, thereby improving the active
  • the photosensitive properties of the layer are improved, thereby increasing the signal strength generated by the active layer, thereby improving the performance of the display device.
  • FIG. 1 is a schematic cross-sectional view of a first structure of a display device provided by an embodiment of the present application.
  • FIG. 2 is a schematic cross-sectional view of a second structure of a display device provided by an embodiment of the present application.
  • FIG. 3 is a schematic cross-sectional view of a third structure of a display device provided by an embodiment of the present application.
  • FIG. 4 is a schematic cross-sectional view of a fourth structure of a display device provided by an embodiment of the present application.
  • FIG. 5 is a schematic cross-sectional view of a fifth structure of a display device provided by an embodiment of the present application.
  • FIG. 6 is a schematic cross-sectional view of a sixth structure of a display device provided by an embodiment of the present application.
  • FIG. 7 is a schematic flowchart of a method for manufacturing a display device provided by an embodiment of the present application.
  • FIG 8 to 16 are schematic cross-sectional views of the flow structure of the manufacturing method of the display device provided by the embodiments of the present application.
  • FIG. 1 is a schematic cross-sectional view of a first structure of a display device provided by an embodiment of the present application.
  • Embodiments of the present application provide a display device and a manufacturing method thereof.
  • the display device 10 includes a substrate layer 100 and an active layer 200 . The specific description is as follows:
  • the substrate layer 100 includes a first substrate region 101 and a second substrate region 102 disposed adjacent to the first substrate region 101 .
  • the material of the substrate layer 100 includes polyimide and the like.
  • the display device 10 further includes a gate layer 300 .
  • the gate layer 300 is disposed on the substrate layer 100 .
  • the material of the gate layer 300 includes one or a combination of Al, Cu, Ag, Au, Mn, Zn and Fe.
  • the gate layer 300 includes a first gate part 310 and a second gate part 320 .
  • the first gate portion 310 is located on the first substrate region 101 .
  • the second gate portion 320 is located on the second substrate region 102 .
  • the display device 10 further includes a first insulating layer 400 .
  • the first insulating layer 400 covers the substrate layer 100 and the gate layer 300 .
  • the material of the first insulating layer 400 includes one or a combination of SiN x , SiO x and SiO x N y .
  • the active layer 200 includes a first body part 210 , a second body part 220 and an additional part 230 .
  • the first body portion 210 is disposed on the first substrate region 101 .
  • the additional portion 230 is disposed on the first body portion 210 .
  • the second body portion 220 is disposed on the second substrate region 102 .
  • the first body portion 210 and the additional portion 230 are not connected to the second body portion 220 .
  • the band gap of the additional part 230 is smaller than the band gap of the first body part 210 and the second body part 220 .
  • the first body portion 210 is disposed on the first insulating layer 400 and on the first gate portion 310 .
  • the second body portion 220 is disposed on the first insulating layer 400 , and the second body portion 220 is located on the second gate portion 320 .
  • the band gap range of the first body portion 210 and the second body portion 220 is greater than 3.5 electron volts (eV).
  • the band gap of the additional portion 230 ranges from 1 eV to 3.5 eV.
  • the material of the first body portion 210 and the second body portion 220 includes indium gallium zinc oxide (IGZO).
  • the material of the additional part 230 includes one or more of Hg 1-x Cd x Se, Mn x Hg 1-x Te, Pb 1-x Sn x Te, Pb 1-x Sn x Se, ZnO and ZnON combination, where 0 ⁇ x ⁇ 1.
  • the first body portion 210 is provided with the additional portion 230 with a smaller band gap than the first body portion 210 and the second body portion 220 , because the additional portion 230 has a narrow band gap,
  • the band gap of the additional portion 230 can be adjusted by selecting different materials, thereby reducing the band gap of the active layer 200 , thereby improving the signal intensity generated when the laser is irradiated, thereby improving the display device 10 . Therefore, the performance of the display device 10 is improved.
  • the additional part 230 includes several first additional sub-parts 231 . Every two adjacent first additional sub-sections 231 are not connected to each other.
  • the distance L between every two adjacent first additional sub-sections 231 is 1 nanometer to 5000 nanometers. Specifically, the distance L between every two adjacent first additional sub-sections 231 may be 200 nanometers, 1000 nanometers, 2000 nanometers, 3200 nanometers, 4700 nanometers, or 4920 nanometers.
  • the thickness H 1 of the first additional sub-section 231 is 1 nm to 5000 nm. Specifically, the thickness H 1 of the first additional sub-section 231 may be 200 nanometers, 1000 nanometers, 2000 nanometers, 3200 nanometers, 4700 nanometers, or 4920 nanometers.
  • the thickness H 1 of the adjacent first additional sub-sections 231 may not be equal.
  • the additional portion 230 is provided with a plurality of the first additional sub-portions 231, which facilitates the propagation of the laser light between the first additional sub-portions 231, thereby further improving the absorption of the laser light, thereby further improving the The signal intensity generated when the laser is irradiated, that is, the photosensitive performance is improved, thereby improving the performance of the display device 10 .
  • the display device 10 further includes a source and drain layer 500 .
  • the material of the source and drain layers 500 includes one or a combination of Al, Cu, Ag, Au, Mn, Zn and Fe.
  • the source-drain layer 500 includes a first source electrode 510 , a second source electrode 520 , a first drain electrode 530 and a second drain electrode 540 .
  • the first source electrode 510 is disposed on the first insulating layer 400 and located on one side of the first body part 210 and the additional part 230 .
  • the first drain electrode 530 is disposed on the first insulating layer 400 and located on the other side of the first body part 210 and the additional part 230 .
  • the second source electrode 520 is disposed on the first insulating layer 400 and located on one side of the second body portion 220 .
  • the second drain electrode 540 is disposed on the first insulating layer 400 and on the other side of the second body portion 220 .
  • the display device 10 further includes a second insulating layer 600 .
  • the material of the second insulating layer 600 includes one or a combination of SiN x , SiO x and SiO x N y .
  • the second insulating layer 600 includes a first insulating portion 610 and a second insulating portion 620 .
  • the first insulating portion 610 covers the additional portion 230 , the first source electrode 510 and the first drain electrode 530 .
  • the first insulating portion 610 includes a first through hole 611 .
  • the first through hole 611 penetrates through the first insulating portion 610 to expose the first drain electrode 530 .
  • the second insulating portion 620 covers the second body portion 220 , the second source electrode 520 and the second drain electrode 540 .
  • the second insulating portion 620 includes a second through hole 621 .
  • the second through hole 621 penetrates through the second insulating portion 620 to expose the second drain electrode 540 .
  • the display device 10 further includes a conductive layer 700 .
  • the conductive layer 700 includes a first conductive portion 710 and a second conductive portion 720 .
  • the first conductive portion 710 is disposed on the first insulating portion 610 and extends into the first through hole 611 to be electrically connected to the first drain electrode 530 .
  • the second conductive portion 720 is disposed on the second insulating portion 620 and extends into the second through hole 621 to be electrically connected to the second drain electrode 540 .
  • the first gate part 310, the first body part 210, the additional part 230, the first source 510, the first drain 530, the first insulating part 610 and the first A conductive portion 710 constitutes a photosensitive transistor 798 .
  • the second gate portion 320 , the second body portion 220 , the second source electrode 520 , the second drain electrode 540 , the second insulating portion 620 and the second conductive portion 720 form a display transistor 799 .
  • the first body portion 210 is provided with the additional portion 230 with a smaller band gap than the first body portion 210 , because the additional portion 230 has a narrow band gap, and the additional portion 230 has a narrower band gap.
  • the band gap can be adjusted, thereby reducing the overall band gap of the active layer 200, thereby increasing the signal intensity generated when the laser is irradiated, thereby improving the performance of the display device 10; the additional portion 230 is set to a number of
  • the first additional sub-sections 231 facilitate the propagation of the laser light between the first additional sub-sections 231, thereby further improving the absorption of the laser light, thereby further improving the signal intensity generated when the laser is irradiated, thereby improving the Display device 10 performance.
  • the present application provides a display device 10, the active layer 200 of the display device 10 is formed by the first body part 210, the second body part 220 and the additional part 230, the first body part 210 and all
  • the second body part 220 has high mobility, while the band gap of the additional part 230 is narrow and the band gap can be adjusted.
  • the overall band gap of the source layer 200 is improved, thereby improving the light-generating signal intensity of the display device 10 , thereby improving the performance of the display device 10 .
  • FIG. 2 is a schematic cross-sectional view of the second structure of the display device provided by the embodiment of the present application. It should be noted that the difference between the second structure and the first structure is:
  • the surface 2311 of the first additional sub-section 231 is provided with a first microstructure 2312 .
  • the first microstructure 2312 is a concave-convex microstructure.
  • the density of the first microstructures 2312 close to the first body portion 210 is greater than the density of the first microstructures 2312 far from the first body portion 210 , which further increases the dwell time of light.
  • the absorption of light is improved, and the photosensitive performance of the display device 10 is further improved.
  • the function of the first microstructure 2312 is to make the light stay in the first additional sub-section 231 for a long time, thereby further improving the absorption of the light, thereby further improving the signal intensity generated when the laser is irradiated , thereby improving the performance of the display device 10 ;
  • the density of the first microstructures 2312 close to the first body portion 210 is set to be greater than the density of the first microstructures 2312 away from the first body portion 210 , thereby further improving the absorption of light, thereby further improving the signal intensity generated when the laser is irradiated, thereby improving the performance of the display device 10 .
  • FIG. 3 is a schematic cross-sectional view of a third structure of a display device provided by an embodiment of the present application. It should be noted that the difference between the third structure and the second structure is:
  • the additional part 230 further includes a second additional sub-part 232 .
  • the second additional sub-portion 232 is disposed on the first body portion 210 .
  • the first additional sub-section 231 is disposed on the second additional sub-section 232 .
  • the thickness H 2 of the second additional sub-section 232 is 1 nm to 5000 nm. Specifically, the thickness H 2 of the second additional sub-section 232 may be 200 nanometers, 1000 nanometers, 2000 nanometers, 3200 nanometers, 4700 nanometers, or 4920 nanometers.
  • the surface 2321 of the second additional sub-section 232 is provided with second microstructures 2322 .
  • the second microstructure 2322 is a concave-convex microstructure.
  • the function of the second microstructure 2322 is to make the light stay in the second additional subsection 232 for a long time, thereby further improving the absorption of the light, thereby further improving the signal intensity generated when the laser is irradiated, thereby improving the The performance of the display device 10 is described.
  • the second additional sub-sections 232 and the first additional sub-sections 231 are sequentially stacked on the first main body part 210 , which is beneficial for the laser to pass between the first additional sub-sections 231 and the first additional sub-sections 231 .
  • the second additional subsection 232 propagates on the second additional subsection 232, thereby further improving the absorption of the laser light, thereby further improving the signal intensity generated when the laser light is irradiated, thereby improving the performance of the display device 10; in the second additional subsection
  • the surface 2321 of the 232 is provided with a second microstructure 2322, which further improves the residence time of the light in the second additional sub-section 232, thereby further improving the absorption of the laser light, thereby further improving the signal intensity generated when the laser is irradiated, thereby The performance of the display device 10 is improved.
  • FIG. 4 is a schematic cross-sectional view of a fourth structure of a display device provided by an embodiment of the present application. It should be noted that the difference between the fourth structure and the first structure is:
  • the first body portion 210 includes a first active region 211 and a second active region 212 disposed around the first active region 211 .
  • the first additional sub-section 231 is disposed in the second active region 212 .
  • the function of the first additional sub-section 231 is to make the light stay in the first additional sub-section 231 for a long time, thereby further improving the absorption of light, thereby further improving the signal intensity generated when the laser is irradiated, thereby improving the Display device 10 performance.
  • FIG. 5 is a schematic cross-sectional view of a fifth structure of a display device provided by an embodiment of the present application. It should be noted that the difference between the fifth structure and the fourth structure is:
  • the additional portion 230 is disposed in the first active region 211 and the second active region 212 .
  • the thickness H 1 of the first additional sub-section 231 of the second active region 212 is greater than the thickness H 1 of the first additional sub-section 231 of the first active region 211 .
  • the thicknesses H 1 of the first additional sub-sections 231 disposed in the first active region 211 may not be equal.
  • the thicknesses H1 of the adjacent first additional sub-sections 231 are not equal.
  • the thickness H 1 of the first additional sub-section 231 of the second active region 212 is set to be larger than the thickness H 1 of the first additional sub-section 231 of the first active region 211 , so that the light
  • the first additional sub-section 231 stays for a long time, thereby further improving the absorption of light, thereby further improving the signal intensity generated when the laser is irradiated, thereby improving the performance of the display device 10;
  • the thicknesses H 1 of the first additional sub-portions 231 of the active region 211 are set to be unequal, so that light travels between the first additional sub-portions 231 on the first active region 211 without entering the first additional sub-portions 231 .
  • the light of the first additional sub-section 231 on the source region 211 is blocked by the first additional sub-section 231 of the second active region 212 , so that the light returns to the first additional sub-section 231 on the first active region 211 .
  • the additional sub-section 231 further improves the residence time of light in the first additional sub-section 231, thereby further improving the absorption of light, thereby further improving the signal intensity generated when the laser is irradiated, thereby improving the display device 10. performance.
  • FIG. 6 is a schematic cross-sectional view of a fifth structure of a display device provided by an embodiment of the present application. It should be noted that the difference between the sixth structure and the first structure is:
  • the display device 10 further includes a lower polarizer 20 , a buffer layer 30 , a color resist layer 40 , a black matrix layer 50 , a first alignment layer 60 , a liquid crystal layer 70 , a second alignment layer 80 , a cover substrate 90 and an upper polarizer 99.
  • the substrate layer 100 is disposed on the lower polarizer 20 .
  • the display transistor 799 and the photosensitive transistor 798 are disposed on the substrate layer 100 .
  • the buffer layer 30 covers the display transistor 799 and the photosensitive transistor 798 .
  • the black matrix layer 50 array is disposed on the buffer layer 30 .
  • the color resist layer 40 is disposed between the black matrix layers 50 .
  • the color resist layer 40 includes a red color resist portion, a green light color resist portion, and a blue color resist portion.
  • the cover substrate 90 is aligned with the black matrix layer 50 .
  • the liquid crystal layer 70 is disposed between the cover substrate 90 and the black matrix layer 50 .
  • the liquid crystal layer 70 further includes a support wall 71 .
  • the support wall 71 is disposed between the liquid crystal layers 70 .
  • the support wall 71 is used to support the liquid crystal layer 70 to prevent the liquid crystal layer 70 from being squeezed or damaged during subsequent manufacturing or use.
  • the first alignment layer 60 is disposed between the black matrix layer 50 and the liquid crystal layer 70 .
  • the second alignment layer 80 is disposed between the cover substrate 90 and the liquid crystal layer 70 .
  • the upper polarizer 99 is disposed on a side of the cover substrate 90 away from the liquid crystal layer 70 .
  • FIG. 7 is a schematic flowchart of a manufacturing method of a display device provided by an embodiment of the present application.
  • 8 to 16 are schematic cross-sectional views of the flow structure of the manufacturing method of the display device provided by the embodiments of the present application.
  • the present application also provides a preparation method of the display device. The specific description is as follows:
  • Step B11 providing a substrate layer, the substrate layer including a first substrate region and a second substrate region disposed adjacent to the first substrate region.
  • the material of the substrate layer 100 includes polyimide or the like.
  • step B11 it also includes:
  • the gate layer 300 material is provided on the substrate layer 100, and the gate layer 300 is formed by etching.
  • the material of the gate layer 300 includes one or a combination of Al, Cu, Ag, Au, Mn, Zn and Fe.
  • the gate layer 300 includes a first gate part 310 and a second gate part 320 .
  • the first gate portion 310 is located on the first substrate region 101 .
  • the second gate portion 320 is located on the second substrate region 102 .
  • the method further includes:
  • the material of the first insulating layer 400 is disposed on the substrate layer 100 and the gate layer 300 to form the first insulating layer 400 .
  • the material of the first insulating layer 400 includes one or a combination of SiN x , SiO x and SiO x N y .
  • Step B12 forming an active layer on the substrate layer, the active layer includes a first body part, a second body part and an additional part, the first body part is disposed on the first substrate region, The additional portion is provided on the first body portion, the second body portion is provided on the second substrate region, and the first body portion and the additional portion are different from the second body portion. connected, wherein the band gap of the additional portion is smaller than the band gap of the first body portion and the second body portion.
  • materials of the first body portion 210 and the second body portion 220 are provided on the first insulating layer 400 , and the first body portion 210 and the second body portion 220 are formed by etching.
  • the first body portion 210 is located on the first gate portion 310 .
  • the second body portion 220 is located on the second gate portion 320 .
  • the first body portion 210 and the second body portion 220 are not connected.
  • the band gap range of the first body portion 210 and the second body portion 220 is greater than 3.5 electron volts (eV).
  • the material of the first body part 210 and the second body part 220 includes indium gallium zinc oxide (indium gallium zinc oxide). oxide, IGZO).
  • a first protective layer 800 is formed on the substrate layer 100 and the second body portion 220 .
  • the material of the first protective layer 800 is provided on the first insulating layer 400 , the first body portion 210 and the second body portion 220 , and the first protective layer 800 is formed by etching.
  • the first protective layer 800 covers the second body portion 220 .
  • the first protective layer 800 is a photoresist layer.
  • the thickness T1 of the first protective layer 800 is 1000 nm to 10000 nm. Specifically, the thickness T1 of the first protective layer 800 may be 2000 nanometers, 3800 nanometers, 5800 nanometers, 7000 nanometers, 8900 nanometers, or 9500 nanometers.
  • a first prefabricated additional portion 233 is formed by disposing the material of the additional portion 230 on the first body portion 210 and the first protective layer 800 .
  • the band gap of the additional portion 230 ranges from 1 eV to 3.5 eV.
  • the material of the additional part 230 includes Hg 1-x Cd x Se, Mn x Hg 1-x Te, Pb 1-x Sn x Te, Pb 1-x Sn x Se, ZnO and ZnON.
  • Hg 1-x Cd x Se Mn x Hg 1-x Te
  • Pb 1-x Sn x Te Pb 1-x Sn x Se
  • ZnO ZnON.
  • the material of the second protective layer 900 is disposed on the material of the additional portion 230 above the first body portion 210 , and the second protective layer 900 is formed by etching.
  • the second protective layer 900 is a photoresist layer.
  • the thickness T 2 of the second protective layer 900 is smaller than the thickness T 1 of the first protective layer 800 .
  • the thickness T 1 of the first protective layer 800 is at least 1000 nanometers thicker than the thickness T 2 of the second protective layer 900 .
  • the thickness T 2 of the second protective layer 900 is set to be smaller than the thickness T 1 of the first protective layer 800 , so as to avoid using a stripping solution for the second protective layer 900 in the subsequent process.
  • the first protective layer 800 is completely peeled off, thereby preventing the second body portion 220 from being damaged in the subsequent manufacturing process, thereby ensuring the performance of the display device 10 .
  • the thickness T 2 of the second protective layer 900 is 20 nanometers to 9000 nanometers. Specifically, the thickness T 2 of the second protective layer 900 may be 200 nanometers, 2500 nanometers, 4000 nanometers, 5600 nanometers, or 8000 nanometers.
  • the first prefabricated additional portion 233 is etched with an acidic etchant to form a second prefabricated additional portion 234 .
  • the acidic etching solution includes one or more combinations of HNO 3 , HCL and H 2 SO 4 .
  • the first protective layer 800 and the second protective layer 900 are treated with a stripping solution, and the second prefabricated additional portion 234 forms a third prefabricated additional portion 235 .
  • the second protective layer 900 is completely peeled off, the thickness of the first protective layer 800 is reduced, and both ends of the first body portion 210 and the third prefabricated additional portion 235 are exposed.
  • the third prefabricated additional portion 235 is etched with an acidic etchant to form the additional portion 230 .
  • the additional portion 230 includes a first additional sub-section 231 and a second additional sub-section 232 .
  • the second additional sub-portion 232 is disposed on the first body portion 210 .
  • the first additional sub-section 231 is disposed on the second additional sub-section 232 .
  • the first body part 210 , the second body part 220 and the additional part 230 constitute the active layer 200 of the display device 10 .
  • the first protective layer 800 is treated with a stripping solution, and the first protective layer 800 is peeled off.
  • the step of peeling off the first protective layer 800 further includes:
  • the source and drain layers 500 are formed on the first insulating layer 400 and the active layer 200 to form the source and drain layers 500 .
  • the material of the source and drain layers 500 includes one or a combination of Al, Cu, Ag, Au, Mn, Zn and Fe.
  • the source-drain layer 500 includes a first source electrode 510 , a second source electrode 520 , a first drain electrode 530 and a second drain electrode 540 .
  • the first source electrode 510 is located on one side of the first body part 210 and the additional part 230 .
  • the first drain electrode 530 is located on the other side of the first body part 210 and the additional part 230 .
  • the second source electrode 520 is located on one side of the second body portion 220 .
  • the second drain 540 is located on the other side of the second body portion 220 .
  • the method further includes:
  • the material of the second insulating layer 600 is disposed on the additional portion 230 and the source and drain layers 500 , and the second insulating layer 600 is formed by etching.
  • the material of the second insulating layer 600 includes one or a combination of SiN x , SiO x and SiO x N y .
  • the second insulating layer 600 includes a first insulating portion 610 and a second insulating portion 620 .
  • the first insulating portion 610 covers the additional portion 230 , the first source electrode 510 and the first drain electrode 530 .
  • the first insulating portion 610 includes a first through hole 611 .
  • the first through hole 611 penetrates through the first insulating portion 610 to expose the first drain electrode 530 .
  • the second insulating portion 620 covers the second body portion 220 , the second source electrode 520 and the second drain electrode 540 .
  • the second insulating portion 620 includes a second through hole 621 .
  • the second through hole 621 penetrates through the second insulating portion 620 to expose the second drain electrode 540 .
  • the method further includes:
  • a conductive layer 700 is formed on the second insulating layer 600 .
  • the conductive layer 700 includes a first conductive portion 710 and a second conductive portion 720 .
  • the first conductive portion 710 is disposed on the first insulating portion 610 and extends into the first through hole 611 to be electrically connected to the first drain electrode 530 .
  • the second conductive portion 720 is disposed on the second insulating portion 620 and extends into the second through hole 621 to be electrically connected to the second drain electrode 540 .
  • the first gate part 310, the first body part 210, the additional part 230, the first source 510, the first drain 530, the first insulating part 610 and the first A conductive portion 710 constitutes a photosensitive transistor 798 .
  • the second gate portion 320 , the second body portion 220 , the second source electrode 520 , the second drain electrode 540 , the second insulating portion 620 and the second conductive portion 720 form a display transistor 799 .
  • the embodiment of the present application discloses a display device and a preparation method thereof, the display device includes a substrate layer and an active layer, the substrate layer includes a first substrate region and a second substrate region disposed adjacent to the first substrate region,
  • the active layer includes a first body part, a second body part and an additional part, the first body part is provided on the first substrate region, the additional part is provided on the first body part,
  • the second body portion is disposed on the second substrate region, the first body portion and the additional portion are not connected to the second body portion, wherein the band gap of the additional portion is smaller than the band gap of the additional portion Band gaps of the first body portion and the second body portion.
  • the band gap of the active layer is reduced, thereby improving the active
  • the photosensitive properties of the layer are improved, thereby increasing the signal strength generated by the active layer, thereby improving the performance of the display device.
  • a display device and a manufacturing method thereof provided by the embodiments of the present application have been introduced in detail above.
  • the principles and implementations of the present application are described with specific examples.
  • the content of this description should not be construed as LIMITATIONS ON THIS APPLICATION.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)

Abstract

一种显示装置（10）及其制备方法，显示装置（10）包括衬底层（100）和有源层（200），有源层（200）包括第一本体部（210）、第二本体部（220）和附加部（230），第一本体部（210）设置在第一衬底区（101）上，附加部（230）设置在第一本体部（210）上，第二本体部（220）设置在第二衬底区（102）上，第一本体部（210）以及附加部（230）与第二本体部（220）不相连，其中，附加部（230）的带隙小于第一本体部（210）以及第二本体部（220）的带隙。

Description

显示装置及其制备方法 技术领域
本申请涉及显示技术领域，具体涉及一种显示装置及其制备方法。
 背景技术
目前，为了实现激光控制显示装置的效果，通常将具有感应功能的感光晶体管和具有显示功能的显示晶体管采用同种工艺以及制程制备在基板上，但是，采用同种工艺制备的感光晶体管和显示晶体管形成的有源层，只能为同种有源层，无法同时实现感光晶体管所需高的感应功能以及显示晶体管所需的高迁移率功能。
如，目前常用有源层的材料有非晶硅、铟镓锌氧化物和多晶硅，采用非晶硅形成的有源层虽然感光效果好，即接收激光照射并产生信号强度高，但是迁移率较低，即对应的显示晶体管无法满足高刷新率大尺寸显示器的要求。采用铟镓锌氧化物形成的有源层虽然迁移率较高，可以被广泛应用在高刷新率的大尺寸显示器，但是接收激光照射并产生信号强度弱。
因此，目前急需一种具有感光产生信号强度高的显示装置。
 技术问题
本申请实施例提供一种显示装置及其制备方法，以解决现有技术中显示装置的感光产生信号强度弱的问题。
 技术解决方案
本申请提供一种显示装置，其包括：
衬底层，所述衬底层包括第一衬底区和与所述第一衬底区相邻设置的第二衬底区；
栅极层，所述栅极层设置于所述衬底层上，所述栅极层包括第一栅极部和第二栅极部，所述第一栅极部位于所述第一衬底区上，所述第二栅极部位于所述第二衬底区上；以及
有源层，所述有源层包括第一本体部、第二本体部和附加部，所述第一本体部设置在所述第一衬底区以及第一栅极部上，所述附加部设置在所述第一本体部上，所述第二本体部设置在所述第二衬底区以及第二栅极部上，所述第一本体部以及所述附加部与所述第二本体部不相连，其中，所述附加部的带隙小于所述第一本体部以及所述第二本体部的带隙。
可选的，在本申请的一些实施例中，所述附加部包括若干第一附加子部，每两相邻的所述第一附加子部之间互不相连。
可选的，在本申请的一些实施例中，所述附加部还包括一第二附加子部，所述第二附加子部设置于所述第一本体部上，所述第一附加子部设置于所述第二附加子部上。
可选的，在本申请的一些实施例中，所述第一附加子部的表面设置有第一微结构。
可选的，在本申请的一些实施例中，所述附加部包括第一附加子部，所述第一本体部包括第一有源区和设置于所述第一有源区周围的第二有源区，所述第一附加子部设置于所述第二有源区。
可选的，在本申请的一些实施例中，所述附加部包括第一附加子部，所述第一本体部包括第一有源区和设置于所述第一有源区周围的第二有源区，所述第一附加子部设置于所述第一有源区和所述第二有源区，所述第二有源区的第一附加子部的厚度大于所述第一有源区的第一附加子部的厚度。
可选的，在本申请的一些实施例中，所述显示装置还包括第一绝缘层。所述第一绝缘层覆盖所述衬底层和所述栅极层。
本申请实施例还提供一种显示装置，其包括：
衬底层，所述衬底层包括第一衬底区和与所述第一衬底区相邻设置的第二衬底区；以及
有源层，所述有源层包括第一本体部、第二本体部和附加部，所述第一本体部设置在所述第一衬底区上，所述附加部设置在所述第一本体部上，所述第二本体部设置在所述第二衬底区上，所述第一本体部以及所述附加部与所述第二本体部不相连，其中，所述附加部的带隙小于所述第一本体部以及所述第二本体部的带隙。
可选的，在本申请的一些实施例中，所述附加部包括若干第一附加子部，每两相邻的所述第一附加子部之间互不相连。
可选的，在本申请的一些实施例中，所述附加部还包括一第二附加子部，所述第二附加子部设置于所述第一本体部上，所述第一附加子部设置于所述第二附加子部上。
可选的，在本申请的一些实施例中，所述第一附加子部的表面设置有第一微结构。
可选的，在本申请的一些实施例中，所述附加部包括第一附加子部，所述第一本体部包括第一有源区和设置于所述第一有源区周围的第二有源区，所述第一附加子部设置于所述第二有源区。
可选的，在本申请的一些实施例中，所述附加部包括第一附加子部，所述第一本体部包括第一有源区和设置于所述第一有源区周围的第二有源区，所述第一附加子部设置于所述第一有源区和所述第二有源区，所述第二有源区的第一附加子部的厚度大于所述第一有源区的第一附加子部的厚度。
可选的，在本申请的一些实施例中，所述显示装置还包括第一绝缘层，所述第一绝缘层覆盖所述衬底层和所述栅极层。
相应的，本申请实施例还提供一种显示装置的制备方法，其包括：
提供一衬底层，所述衬底层包括第一衬底区和与所述第一衬底区相邻设置的第二衬底区；以及
在所述衬底层上形成有源层，所述有源层包括第一本体部、第二本体部和附加部，所述第一本体部设置在所述第一衬底区上，所述附加部设置在所述第一本体部上，所述第二本体部设置在所述第二衬底区上，所述第一本体部以及所述附加部与所述第二本体部不相连，其中，所述附加部的带隙小于所述第一本体部和所述第二本体部的带隙。
可选的，在本申请的一些实施例中，在所述衬底层上形成有源层的步骤中，包括：
在所述衬底层以及所述第二本体部上形成第一保护层；
在所述第一本体部上设置附加部材料；
在所述第一本体部之上的附加部材料上形成第二保护层；
对所述附加部材料进行蚀刻形成附加部。
可选的，在本申请的一些实施例中，在对所述附加部材料进行蚀刻形成附加部的步骤中，包括：
去除所述第二保护层。
可选的，在本申请的一些实施例中，在去除所述第二保护层的步骤之后，还包括：
对所述附加部进行蚀刻处理，形成包括第一附加子部和第二附加子部的附加部，其中，所述第二附加子部设置于所述第一本体部上，所述第一附加子部设置于所述第二附加子部上。
可选的，在本申请的一些实施例中，在提供一衬底层，所述衬底层包括第一衬底区和与所述第一衬底区相邻设置的第二衬底区的步骤之后，在所述衬底层上形成有源层的步骤之前，还包括：
在所述衬底层形成栅极层，所述栅极层包括第一栅极部和第二栅极部，所述第一栅极部位于所述第一衬底区上，所述第二栅极部位于所述第二衬底区上。
可选的，在本申请的一些实施例中，每两相邻的所述第一附加子部之间的距离为1纳米-5000纳米。
 有益效果
本申请实施例公开了一种显示装置及其制备方法，显示装置包括衬底层和有源层，衬底层包括第一衬底区和与第一衬底区相邻设置的第二衬底区，所述有源层包括第一本体部、第二本体部和附加部，所述第一本体部设置在所述第一衬底区上，所述附加部设置在所述第一本体部上，所述第二本体部设置在所述第二衬底区上，所述第一本体部以及所述附加部与所述第二本体部不相连，其中，所述附加部的带隙小于所述第一本体部以及所述第二本体部的带隙。通过在所述第一本体部上设置带隙小于所述第一本体部和所述第二本体部的所述附加部，从而降低所述有源层的带隙，从而提高了所述有源层感光性能，从而提高了所述有源层产生的信号强度，从而提高了所述显示装置的性能。
 附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本申请实施例提供的显示装置的第一种结构剖视示意图。
图2是本申请实施例提供的显示装置的第二种结构剖视示意图。
图3是本申请实施例提供的显示装置的第三种结构剖视示意图。
图4是本申请实施例提供的显示装置的第四种结构剖视示意图。
图5是本申请实施例提供的显示装置的第五种结构剖视示意图。
图6是本申请实施例提供的显示装置的第六种结构剖视示意图。
图7是本申请实施例提供的显示装置的制备方法的流程示意图。
图8-图16是本申请实施例提供的显示装置的制备方法的流程结构剖视示意图。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。
请参阅图1，图1是本申请实施例提供的显示装置的第一种结构剖视示意图。本申请实施例提供一种显示装置及其制备方法。所述显示装置10包括衬底层100和有源层200。具体描述如下：
所述衬底层100包括第一衬底区101和与所述第一衬底区101相邻设置的第二衬底区102。所述衬底层100的材料包括聚酰亚胺等。
在一实施例中，所述显示装置10还包括栅极层300。所述栅极层300设置于所述衬底层100上。所述栅极层300的材料包括Al、Cu、Ag、Au、Mn、Zn和Fe中的一种或几种组合。所述栅极层300包括第一栅极部310和第二栅极部320。所述第一栅极部310位于所述第一衬底区101上。所述第二栅极部320位于所述第二衬底区102上。
在一实施例中，所述显示装置10还包括第一绝缘层400。所述第一绝缘层400覆盖所述衬底层100和所述栅极层300。所述第一绝缘层400的材料包括SiN x、SiO x和SiO xN y中的一种或几种组合。
所述有源层200包括第一本体部210、第二本体部220和附加部230。所述第一本体部210设置在所述第一衬底区101上。所述附加部230设置在所述第一本体部210上。所述第二本体部220设置在所述第二衬底区102上。所述第一本体部210以及所述附加部230与所述第二本体部220不相连。所述附加部230的带隙小于所述第一本体部210以及所述第二本体部220的带隙。
具体地，所述第一本体部210设置于所述第一绝缘层400上，且位于所述第一栅极部310之上。所述第二本体部220设置于所述第一绝缘层400上，且，所述第二本体部220位于所述第二栅极部320之上。
在一实施例中，所述第一本体部210和所述第二本体部220带隙范围为大于3.5电子伏特（electron volt，eV）。所述附加部230的带隙范围为1 eV-3.5 eV。
在一实施例中，所述第一本体部210和所述第二本体部220的材料包括铟镓锌氧化物(indium gallium zinc oxide，IGZO)。所述附加部230的材料包括Hg 1-xCd xSe、Mn xHg 1-xTe、Pb 1-xSn xTe、Pb 1-xSn xSe、ZnO和ZnON中的一种或几种组合，其中，0≤x≤1。
在本申请中，在所述第一本体部210上设置带隙小于所述第一本体部210和所述第二本体部220的所述附加部230，因所述附加部230带隙窄，并且，所述附加部230的带隙可以通过选用不同材料进行调节，进而降低了所述有源层200的带隙，从而提高了激光照射时产生的信号强度，从而提高了所述显示装置10的感应性能和迁移率，从而提高了所述显示装置10的性能。
在一实施例中，所述附加部230包括若干第一附加子部231。每两相邻的所述第一附加子部231之间互不相连。
在一实施例中，每两相邻的所述第一附加子部231之间的距离L为1纳米-5000纳米。具体地，每两相邻的所述第一附加子部231之间的距离L可以为200纳米、1000纳米、2000纳米、3200纳米、4700纳米或4920纳米等。
在一实施例中，所述第一附加子部231的厚度H 1为1纳米-5000纳米。具体地，所述第一附加子部231的厚度H 1可以为200纳米、1000纳米、2000纳米、3200纳米、4700纳米或4920纳米等。
在一实施例中，相邻的所述第一附加子部231的厚度H 1可以不相等。
在本申请中，将所述附加部230设置成若干所述第一附加子部231，有利于激光在所述第一附加子部231之间传播，从而进一步提高了激光的吸收，从而进一步提高了激光照射时产生的信号强度，即，提高了光感应性能，从而提高了所述显示装置10的性能。
在一实施例中，所述显示装置10还包括源漏极层500。所述源漏极层500的材料包括Al、Cu、Ag、Au、Mn、Zn和Fe中的一种或几种组合。所述源漏极层500包括第一源极510、第二源极520、第一漏极530和第二漏极540。所述第一源极510设置于所述第一绝缘层400上，并位于所述第一本体部210和所述附加部230的一侧。所述第一漏极530设置于所述第一绝缘层400上，并位于所述第一本体部210和所述附加部230的另一侧。所述第二源极520设置于所述第一绝缘层400上，并位于所述第二本体部220的一侧。所述第二漏极540设置于所述第一绝缘层400上，并位于所述第二本体部220的另一侧。
在一实施例中，所述显示装置10还包括第二绝缘层600。所述第二绝缘层600的材料包括SiN x、SiO x和SiO xN y中的一种或几种组合。所述第二绝缘层600包括第一绝缘部610和第二绝缘部620。所述第一绝缘部610覆盖所述附加部230、所述第一源极510以及所述第一漏极530。所述第一绝缘部610包括第一通孔611。所述第一通孔611贯穿所述第一绝缘部610以暴露所述第一漏极530。所述第二绝缘部620覆盖所述第二本体部220、所述第二源极520以及所述第二漏极540。所述第二绝缘部620包括第二通孔621。所述第二通孔621贯穿所述第二绝缘部620以暴露所述第二漏极540。
在一实施例中，所述显示装置10还包括导电层700。所述导电层700包括第一导电部710和第二导电部720。所述第一导电部710设置于所述第一绝缘部610上，并延伸入所述第一通孔611与所述第一漏极530电连接。所述第二导电部720设置于所述第二绝缘部620上，并延伸入所述第二通孔621与所述第二漏极540电连接。
所述第一栅极部310、所述第一本体部210、所述附加部230、所述第一源极510、所述第一漏极530、所述第一绝缘部610和所述第一导电部710组成感光晶体管798。所述第二栅极部320、所述第二本体部220、第二源极520、第二漏极540、所述第二绝缘部620和所述第二导电部720组成显示晶体管799。
在本申请中，在所述第一本体部210上设置带隙小于所述第一本体部210的所述附加部230，因所述附加部230的带隙窄，且所述附加部230的带隙可调节，从而降低了所述有源层200的整体带隙，从而提高了激光照射时产生的信号强度，从而提高了所述显示装置10的性能；将所述附加部230设置成若干所述第一附加子部231，有利于激光在所述第一附加子部231之间传播，从而进一步提高了激光的吸收，从而进一步提高了激光照射时产生的信号强度，从而提高了所述显示装置10的性能。
本申请提供一种显示装置10，所述显示装置10的有源层200由所述第一本体部210、所述第二本体部220和附加部230形成，所述第一本体部210和所述第二本体部220具有高迁移率，而所述附加部230的带隙窄，并且带隙可调节，将所述附加部230设置在所述第一本体部210上，可以降低所述有源层200的整体带隙，从而提高了所述显示装置10的光产生信号强度，进而提高了所述显示装置10的性能。
请参阅图2，图2是本申请实施例提供的显示装置的第二种结构剖视示意图。需要说明的是，所述第二种结构和所述第一种结构的不同之处在于：
所述第一附加子部231的表面2311设置有第一微结构2312。所述第一微结构2312为凹凸微结构。
在一实施例中，靠近所述第一本体部210的第一微结构2312的密集程度大于远离所述第一本体部210的第一微结构2312的密集程度，进一步提高了光线的停留时间，进而提高了光线的吸收，进而提高了所述显示装置10的感光性能。
在本申请中，所述第一微结构2312的作用是使得光线在所述第一附加子部231中停留时间长，从而进一步提高了光线的吸收，从而进一步提高了激光照射时产生的信号强度，从而提高了所述显示装置10的性能；将靠近所述第一本体部210的第一微结构2312的密集程度设置为大于远离所述第一本体部210的第一微结构2312的密集程度，从而进一步使得提高了光线的吸收，从而进一步提高了激光照射时产生的信号强度，从而提高了所述显示装置10的性能。
请参阅图3，图3是本申请实施例提供的显示装置的第三种结构剖视示意图。需要说明的是，所述第三种结构和所述第二种结构的不同之处在于：
所述附加部230还包括一第二附加子部232。所述第二附加子部232设置于所述第一本体部210上。所述第一附加子部231设置于所述第二附加子部232上。
在一实施例中，所述第二附加子部232的厚度H 2为1纳米-5000纳米。具体地，所述第二附加子部232的厚度H 2可以为200纳米、1000纳米、2000纳米、3200纳米、4700纳米或4920纳米等。
在一实施例中，所述第二附加子部232的表面2321设置有第二微结构2322。所述第二微结构2322为凹凸微结构。所述第二微结构2322的作用是使得光线在所述第二附加子部232中停留时间长，从而进一步提高了光线的吸收，从而进一步提高了激光照射时产生的信号强度，从而提高了所述显示装置10的性能。
在本申请中，在所述第一本体部210上依次层叠设置所述第二附加子部232和所述第一附加子部231，有利于激光在所述第一附加子部231之间和所述第二附加子部232上传播，从而进一步提高了激光的吸收，从而进一步提高了激光照射时产生的信号强度，从而提高了所述显示装置10的性能；在所述第二附加子部232的表面2321设置有第二微结构2322，进一步提高了光线在所述第二附加子部232的停留时间，从而进一步提高了激光的吸收，从而进一步提高了激光照射时产生的信号强度，从而提高了所述显示装置10的性能。
请参阅图4，图4是本申请实施例提供的显示装置的第四种结构剖视示意图。需要说明的是，所述第四种结构和所述第一种结构的不同之处在于：
所述第一本体部210包括第一有源区211和设置于所述第一有源区211周围的第二有源区212。所述第一附加子部231设置于所述第二有源区212。
所述第一附加子部231的作用是使得光线在第一附加子部231中停留时间长，从而进一步提高了光线的吸收，从而进一步提高了激光照射时产生的信号强度，从而提高了所述显示装置10的性能。
请参阅图5，图5是本申请实施例提供的显示装置的第五种结构剖视示意图。需要说明的是，所述第五种结构和所述第四种结构的不同之处在于：
所述附加部230设置于所述第一有源区211和所述第二有源区212。所述第二有源区212的第一附加子部231的厚度H 1大于所述第一有源区211的第一附加子部231的厚度H 1。
在一实施例中，设置在所述第一有源区211的第一附加子部231的厚度H 1可以不相等。如，在所述第一有源区211，相邻所述第一附加子部231的厚度H 1不相等。
在本申请中，将所述第二有源区212的第一附加子部231的厚度H 1设置为大于所述第一有源区211的第一附加子部231的厚度H 1，使得光线在第一附加子部231中停留时间长，从而进一步提高了光线的吸收，从而进一步提高了激光照射时产生的信号强度，从而提高了所述显示装置10的性能；将设置在所述第一有源区211的第一附加子部231的厚度H 1设置为不相等，使得光线在所述第一有源区211上的第一附加子部231之间传播，未进入所述第一有源区211上的第一附加子部231的光线，被所述第二有源区212的第一附加子部231阻挡，从而使得光线又返回至所述第一有源区211上的第一附加子部231，进一步提高了光线在第一附加子部231中的停留时间，从而进一步提高了光线的吸收，从而进一步提高了激光照射时产生的信号强度，从而提高了所述显示装置10的性能。
请参阅图6，图6是本申请实施例提供的显示装置的第五种结构剖视示意图。需要说明的是，所述第六种结构和所述第一种结构的不同之处在于：
所述显示装置10还包括下偏光片20、缓冲层30、色阻层40、黑色矩阵层50、第一配向层60、液晶层70、第二配向层80、盖板基板90以及上偏光片99。所述衬底层100设置在所述下偏光片20上。所述显示晶体管799和所述感光晶体管798设置于所述衬底层100。所述缓冲层30覆盖所述显示晶体管799和所述感光晶体管798。所述黑色矩阵层50阵列设置于所述缓冲层30上。所述色阻层40设置于所述黑色矩阵层50之间。所述色阻层40包括红色色阻部、绿光色阻部和蓝色色阻部。所述盖板基板90与所述黑色矩阵层50对位设置。所述液晶层70设置于所述盖板基板90和所述黑色矩阵层50之间。所述液晶层70还包括支撑挡墙71。所述支撑挡墙71设置于所述液晶层70之间。所述支撑挡墙71用于支撑所述液晶层70，避免所述液晶层70在后续制程或使用过程中，遭到挤压或损坏。所述第一配向层60设置于所述黑色矩阵层50与所述液晶层70之间。所述第二配向层80设置于所述盖板基板90和所述液晶层70之间。所述上偏光片99设置于所述盖板基板90远离所述液晶层70的一侧。
请参阅图7和图8-图16，图7是本申请实施例提供的显示装置的制备方法的流程示意图。图8-图16是本申请实施例提供的显示装置的制备方法的流程结构剖视示意图。本申请还提供一种显示装置的制备方法。具体描述如下：
步骤B11、提供一衬底层，所述衬底层包括第一衬底区和与所述第一衬底区相邻设置的第二衬底区。
请参阅图8，所述衬底层100的材料包括聚酰亚胺等。
在步骤B11之后，还包括：
在所述衬底层100上设置栅极层300材料，蚀刻形成栅极层300。所述栅极层300的材料包括Al、Cu、Ag、Au、Mn、Zn和Fe中的一种或几种组合。所述栅极层300包括第一栅极部310和第二栅极部320。所述第一栅极部310位于所述第一衬底区101上。所述第二栅极部320位于所述第二衬底区102上。
在所述衬底层100上设置栅极层300材料，蚀刻形成栅极层300的步骤之后，还包括：
在所述衬底层100以及所述栅极层300上设置第一绝缘层400的材料形成第一绝缘层400。所述第一绝缘层400的材料包括SiN x、SiO x和SiO xN y中的一种或几种组合。
步骤B12、在所述衬底层上形成有源层，所述有源层包括第一本体部、第二本体部和附加部，所述第一本体部设置在所述第一衬底区上，所述附加部设置在所述第一本体部上，所述第二本体部设置在所述第二衬底区上，所述第一本体部以及所述附加部与所述第二本体部不相连，其中，所述附加部的带隙小于所述第一本体部和所述第二本体部的带隙。
请参阅图9，具体地，在所述第一绝缘层400设置第一本体部210和第二本体部220材料，蚀刻形成第一本体部210和第二本体部220。所述第一本体部210位于所述第一栅极部310之上。所述第二本体部220位于所述第二栅极部320之上。所述第一本体部210与所述第二本体部220不相连。
在一实施例中，所述第一本体部210和所述第二本体部220带隙范围为大于3.5电子伏特（electron volt，eV）。
在一实施例中，所述第一本体部210和所述第二本体部220的材料包括铟镓锌氧化物(indium gallium zinc oxide，IGZO)。
然后，在所述衬底层100以及所述第二本体部220上形成第一保护层800。具体地，在所述第一绝缘层400、所述第一本体部210以及所述第二本体部220上设置第一保护层800的材料，蚀刻形成第一保护层800。所述第一保护层800覆盖所述第二本体部220。所述第一保护层800为光刻胶层。所述第一保护层800的厚度T 1为1000纳米-10000纳米。具体地，所述第一保护层800的厚度T 1可以为2000纳米、3800纳米、5800纳米、7000纳米、8900纳米或9500纳米等。
请参阅图10，然后，在所述第一本体部210以及所述第一保护层800上设置附加部230材料形成第一预制附加部233。
在一实施例中，所述附加部230的带隙范围为1eV-3.5eV。
在一实施例中，所述附加部230的材料包括Hg 1-xCd xSe、Mn xHg 1-xTe、Pb 1-xSn xTe、Pb 1-xSn xSe、ZnO和ZnON中的一种或几种组合，其中，0≤x≤1。
请参阅图11，然后，在所述第一本体部210之上的附加部230材料设置第二保护层900材料，蚀刻形成第二保护层900。所述第二保护层900为光刻胶层。所述第二保护层900的厚度T 2小于所述第一保护层800的厚度T 1。
在一实施例中，所述第一保护层800的厚度T 1至少比所述第二保护层900的厚度T 2厚1000纳米。
在本申请中，将所述第二保护层900的厚度T 2设置为小于所述第一保护层800的厚度T 1，避免在后续制程中，对所述第二保护层900采用剥离液进行剥离时，将所述第一保护层800全部剥离，进而避免了所述第二本体部220在后续制程中受到损坏，进而保证了所述显示装置10的性能。
在一实施例中，所述第二保护层900的厚度T 2为20纳米-9000纳米。具体地，所述第二保护层900的厚度T 2可以为200纳米、2500纳米、4000纳米、5600纳米或8000纳米等。
请参阅图12，然后，对所述第一预制附加部233采用酸性蚀刻液进行蚀刻形成第二预制附加部234。酸性蚀刻液包括HNO 3、HCL和H 2SO 4的一种或几种组合。
请参阅图13，然后，采用剥离液对所述第一保护层800和所述第二保护层900进行处理，所述第二预制附加部234形成第三预制附加部235，此时，所述第二保护层900被全部剥离，所述第一保护层800的厚度减薄，所述第一本体部210以及所述第三预制附加部235的两端露出。
请参阅图14，然后，采用酸性蚀刻液对所述第三预制附加部235进行蚀刻形成附加部230。所述附加部230包括第一附加子部231和第二附加子部232。所述第二附加子部232设置于所述第一本体部210上。所述第一附加子部231设置于所述第二附加子部232上。
所述第一本体部210、所述第二本体部220和所述附加部230构成所述显示装置10的有源层200。
请参阅图15，然后，对所述第一保护层800采用剥离液处理，所述第一保护层800被剥离。
在对所述第一保护层800采用剥离液处理，所述第一保护层800被剥离的步骤之后，还包括：
请参阅图16，在第一绝缘层400以及所述有源层200上设置源漏极层500材料形成源漏极层500。所述源漏极层500的材料包括Al、Cu、Ag、Au、Mn、Zn和Fe中的一种或几种组合。所述源漏极层500包括第一源极510、第二源极520、第一漏极530和第二漏极540。所述第一源极510位于所述第一本体部210和所述附加部230的一侧。所述第一漏极530位于所述第一本体部210和所述附加部230的另一侧。所述第二源极520位于所述第二本体部220的一侧。所述第二漏极540位于所述第二本体部220的另一侧。
在第一绝缘层400以及所述有源层200上设置源漏极层500材料形成源漏极层500的步骤之后，还包括：
在所述附加部230以及所述源漏极层500上设置第二绝缘层600材料，蚀刻形成第二绝缘层600。所述第二绝缘层600的材料包括SiN x、SiO x和SiO xN y中的一种或几种组合。所述第二绝缘层600包括第一绝缘部610和第二绝缘部620。所述第一绝缘部610覆盖所述附加部230、所述第一源极510以及所述第一漏极530。所述第一绝缘部610包括第一通孔611。所述第一通孔611贯穿所述第一绝缘部610以暴露所述第一漏极530。所述第二绝缘部620覆盖所述第二本体部220、所述第二源极520以及所述第二漏极540。所述第二绝缘部620包括第二通孔621。所述第二通孔621贯穿所述第二绝缘部620以暴露所述第二漏极540。
在所述附加部230以及所述源漏极层500上设置第二绝缘层600材料，蚀刻形成第二绝缘层600的步骤之后，还包括：
在所述第二绝缘层600上形成导电层700。所述导电层700包括第一导电部710和第二导电部720。所述第一导电部710设置于所述第一绝缘部610上，并延伸入所述第一通孔611与所述第一漏极530电连接。所述第二导电部720设置于所述第二绝缘部620上，并延伸入所述第二通孔621与所述第二漏极540电连接。
所述第一栅极部310、所述第一本体部210、所述附加部230、所述第一源极510、所述第一漏极530、所述第一绝缘部610和所述第一导电部710组成感光晶体管798。所述第二栅极部320、所述第二本体部220、第二源极520、第二漏极540、所述第二绝缘部620和所述第二导电部720组成显示晶体管799。
本申请实施例公开了一种显示装置及其制备方法，显示装置包括衬底层和有源层，衬底层包括第一衬底区和与第一衬底区相邻设置的第二衬底区，所述有源层包括第一本体部、第二本体部和附加部，所述第一本体部设置在所述第一衬底区上，所述附加部设置在所述第一本体部上，所述第二本体部设置在所述第二衬底区上，所述第一本体部以及所述附加部与所述第二本体部不相连，其中，所述附加部的带隙小于所述第一本体部以及所述第二本体部的带隙。通过在所述第一本体部上设置带隙小于所述第一本体部和所述第二本体部的所述附加部，从而降低所述有源层的带隙，从而提高了所述有源层感光性能，从而提高了所述有源层产生的信号强度，从而提高了所述显示装置的性能。
以上对本申请实施例所提供的一种显示装置及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。

Claims (20)

  1. 一种显示装置，其包括：
    衬底层，所述衬底层包括第一衬底区和与所述第一衬底区相邻设置的第二衬底区；
    栅极层，所述栅极层设置于所述衬底层上，所述栅极层包括第一栅极部和第二栅极部，所述第一栅极部位于所述第一衬底区上，所述第二栅极部位于所述第二衬底区上；以及
    有源层，所述有源层包括第一本体部、第二本体部和附加部，所述第一本体部设置在所述第一衬底区以及第一栅极部上，所述附加部设置在所述第一本体部上，所述第二本体部设置在所述第二衬底区以及第二栅极部上，所述第一本体部以及所述附加部与所述第二本体部不相连，其中，所述附加部的带隙小于所述第一本体部以及所述第二本体部的带隙。
  2. 根据权利要求1所述的显示装置，其中，所述附加部包括若干第一附加子部，每两相邻的所述第一附加子部之间互不相连。
  3. 根据权利要求2所述的显示装置，其中，所述附加部还包括一第二附加子部，所述第二附加子部设置于所述第一本体部上，所述第一附加子部设置于所述第二附加子部上。
  4. 根据权利要求2所述的显示装置，其中，所述第一附加子部的表面设置有第一微结构。
  5. 根据权利要求1所述的显示装置，其中，所述附加部包括第一附加子部，所述第一本体部包括第一有源区和设置于所述第一有源区周围的第二有源区，所述第一附加子部设置于所述第二有源区。
  6. 根据权利要求1所述的显示装置，其中，所述附加部包括第一附加子部，所述第一本体部包括第一有源区和设置于所述第一有源区周围的第二有源区，所述第一附加子部设置于所述第一有源区和所述第二有源区，所述第二有源区的第一附加子部的厚度大于所述第一有源区的第一附加子部的厚度。
  7. 根据权利要求1所述的显示装置，其中，所述显示装置还包括第一绝缘层。所述第一绝缘层覆盖所述衬底层和所述栅极层。
  8. 一种显示装置，其包括：
    衬底层，所述衬底层包括第一衬底区和与所述第一衬底区相邻设置的第二衬底区；以及
    有源层，所述有源层包括第一本体部、第二本体部和附加部，所述第一本体部设置在所述第一衬底区上，所述附加部设置在所述第一本体部上，所述第二本体部设置在所述第二衬底区上，所述第一本体部以及所述附加部与所述第二本体部不相连，其中，所述附加部的带隙小于所述第一本体部以及所述第二本体部的带隙。
  9. 根据权利要求8所述的显示装置，其中，所述附加部包括若干第一附加子部，每两相邻的所述第一附加子部之间互不相连。
  10. 根据权利要求9所述的显示装置，其中，所述附加部还包括一第二附加子部，所述第二附加子部设置于所述第一本体部上，所述第一附加子部设置于所述第二附加子部上。
  11. 根据权利要求9所述的显示装置，其中，所述第一附加子部的表面设置有第一微结构。
  12. 根据权利要求8所述的显示装置，其中，所述附加部包括第一附加子部，所述第一本体部包括第一有源区和设置于所述第一有源区周围的第二有源区，所述第一附加子部设置于所述第二有源区。
  13. 根据权利要求8所述的显示装置，其中，所述附加部包括第一附加子部，所述第一本体部包括第一有源区和设置于所述第一有源区周围的第二有源区，所述第一附加子部设置于所述第一有源区和所述第二有源区，所述第二有源区的第一附加子部的厚度大于所述第一有源区的第一附加子部的厚度。
  14. 根据权利要求8所述的显示装置，其中，所述显示装置还包括第一绝缘层，所述第一绝缘层覆盖所述衬底层和所述栅极层。
  15. 一种显示装置的制备方法，其包括：
    提供一衬底层，所述衬底层包括第一衬底区和与所述第一衬底区相邻设置的第二衬底区；以及
    在所述衬底层上形成有源层，所述有源层包括第一本体部、第二本体部和附加部，所述第一本体部设置在所述第一衬底区上，所述附加部设置在所述第一本体部上，所述第二本体部设置在所述第二衬底区上，所述第一本体部以及所述附加部与所述第二本体部不相连，其中，所述附加部的带隙小于所述第一本体部和所述第二本体部的带隙。
  16. 根据权利要求15所述的显示装置的制备方法，其中，在所述衬底层上形成有源层的步骤中，包括：
    在所述衬底层以及所述第二本体部上形成第一保护层；
    在所述第一本体部上设置附加部材料；
    在所述第一本体部之上的附加部材料上形成第二保护层；以及
    对所述附加部材料进行蚀刻形成附加部，所述第一本体部、所述第二本体部和所述附加部构成有源层。
  17. 根据权利要求16所述的显示装置的制备方法，其中，在对所述附加部材料进行蚀刻形成附加部的步骤中，包括：
    去除所述第二保护层。
  18. 根据权利要求17所述的显示装置的制备方法，其中，在去除所述第二保护层的步骤之后，还包括：
    对所述附加部进行蚀刻处理，形成包括第一附加子部和第二附加子部的附加部，其中，所述第二附加子部设置于所述第一本体部上，所述第一附加子部设置于所述第二附加子部上。
  19. 根据权利要求15所述的显示装置的制备方法，在提供一衬底层，所述衬底层包括第一衬底区和与所述第一衬底区相邻设置的第二衬底区的步骤之后，在所述衬底层上形成有源层的步骤之前，还包括：
    在所述衬底层形成栅极层，所述栅极层包括第一栅极部和第二栅极部，所述第一栅极部位于所述第一衬底区上，所述第二栅极部位于所述第二衬底区上。
  20. 根据权利要求18所述的显示装置的制备方法，每两相邻的所述第一附加子部之间的距离为1纳米-5000纳米。
PCT/CN2021/096612 2021-04-08 2021-05-28 显示装置及其制备方法 WO2022213463A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US17/419,115 US20240030224A1 (en) 2021-04-08 2021-05-28 Display device and method of manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202110375867.5A CN113192975B (zh) 2021-04-08 2021-04-08 显示装置及其制备方法
CN202110375867.5 2021-04-08

Publications (1)

Publication Number Publication Date
WO2022213463A1 true WO2022213463A1 (zh) 2022-10-13

Family

ID=76974930

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/096612 WO2022213463A1 (zh) 2021-04-08 2021-05-28 显示装置及其制备方法

Country Status (3)

Country Link
US (1) US20240030224A1 (zh)
CN (1) CN113192975B (zh)
WO (1) WO2022213463A1 (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050220391A1 (en) * 2004-03-30 2005-10-06 Hashimoto Jun-Ichi Optical integrated device
CN111048524A (zh) * 2019-11-26 2020-04-21 深圳市华星光电半导体显示技术有限公司 阵列基板及制备方法、显示面板
CN111399292A (zh) * 2020-04-09 2020-07-10 昆山龙腾光电股份有限公司 阵列基板及其制备方法和触控液晶显示装置
CN111463252A (zh) * 2020-04-20 2020-07-28 合肥鑫晟光电科技有限公司 一种显示面板及其制备方法、显示装置
CN112086561A (zh) * 2020-09-07 2020-12-15 深圳市华星光电半导体显示技术有限公司 一种光感应器件及其制作方法、显示面板

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6480070A (en) * 1987-09-21 1989-03-24 Mitsubishi Electric Corp Semiconductor integrated circuit
FI20045293A (fi) * 2004-08-13 2006-02-14 Avantone Oy Laite ja menetelmä diffraktiivisen mikrorakenteen tuottamiseksi
US7560789B2 (en) * 2005-05-27 2009-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2007152554A (ja) * 2005-05-27 2007-06-21 Semiconductor Energy Lab Co Ltd 半導体装置
KR100696200B1 (ko) * 2005-10-14 2007-03-20 한국전자통신연구원 능동 구동 표시 장치 및 그 제조방법
KR102593511B1 (ko) * 2013-05-22 2023-10-24 시-위안 왕 마이크로구조-증강 흡수 감광성 디바이스
CN104679356B (zh) * 2015-03-23 2017-10-20 京东方科技集团股份有限公司 光学传感单元、触摸面板及其制作方法、显示装置
US20170287943A1 (en) * 2016-03-31 2017-10-05 Qualcomm Incorporated High aperture ratio display by introducing transparent storage capacitor and via hole
CN112071865B (zh) * 2020-09-10 2022-02-22 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法、显示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050220391A1 (en) * 2004-03-30 2005-10-06 Hashimoto Jun-Ichi Optical integrated device
CN111048524A (zh) * 2019-11-26 2020-04-21 深圳市华星光电半导体显示技术有限公司 阵列基板及制备方法、显示面板
CN111399292A (zh) * 2020-04-09 2020-07-10 昆山龙腾光电股份有限公司 阵列基板及其制备方法和触控液晶显示装置
CN111463252A (zh) * 2020-04-20 2020-07-28 合肥鑫晟光电科技有限公司 一种显示面板及其制备方法、显示装置
CN112086561A (zh) * 2020-09-07 2020-12-15 深圳市华星光电半导体显示技术有限公司 一种光感应器件及其制作方法、显示面板

Also Published As

Publication number Publication date
US20240030224A1 (en) 2024-01-25
CN113192975A (zh) 2021-07-30
CN113192975B (zh) 2023-12-01

Similar Documents

Publication Publication Date Title
TWI382262B (zh) 液晶顯示裝置之陣列基板及其製造方法
US11961848B2 (en) Display substrate and manufacturing method therefor, and display device
JP2010282173A (ja) 薄膜トランジスタを備えた表示素子及びその製造方法
TWI484271B (zh) 畫素結構及畫素結構的製作方法
WO2016165185A1 (zh) 双栅极氧化物半导体tft基板的制作方法及其结构
WO2016004692A1 (zh) 阵列基板制备方法
WO2015149482A1 (zh) 阵列基板及其制作方法、显示装置
US20210159279A1 (en) Array substrate, manufacturing method thereof, display panel and display device
CN108573956A (zh) 阵列基板及其制作方法、显示装置
WO2020154876A1 (zh) 薄膜晶体管及其制造方法、阵列基板和显示装置
WO2017117974A1 (zh) 一种阵列基板的制作方法、阵列基板和显示面板
WO2021031312A1 (zh) 有机发光显示面板及其制备方法
KR20130062726A (ko) 박막 트랜지스터 및 이의 제조 방법
WO2021026990A1 (zh) 一种阵列基板及其制作方法
WO2013123786A1 (zh) 薄膜晶体管阵列基板及其制作方法
WO2023070753A1 (zh) 阵列基板及其制备方法和显示面板
WO2019223076A1 (zh) 金属氧化物薄膜晶体管及其制作方法、显示器
US11894386B2 (en) Array substrate, manufacturing method thereof, and display panel
WO2019091182A1 (zh) 阵列基板及其制作方法、显示装置
WO2015165226A1 (zh) 显示基板的制造方法和显示基板
TWI715344B (zh) 主動元件基板及其製造方法
WO2022213463A1 (zh) 显示装置及其制备方法
WO2019051864A1 (zh) 主动阵列开关的制造方法
WO2017166337A1 (zh) 薄膜晶体管、薄膜晶体管的制备方法及液晶显示面板
TW201601220A (zh) 薄膜電晶體及其製造方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 17419115

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21935684

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21935684

Country of ref document: EP

Kind code of ref document: A1