WO2022205497A1 - 一种功率组件 - Google Patents

一种功率组件 Download PDF

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Publication number
WO2022205497A1
WO2022205497A1 PCT/CN2021/086491 CN2021086491W WO2022205497A1 WO 2022205497 A1 WO2022205497 A1 WO 2022205497A1 CN 2021086491 W CN2021086491 W CN 2021086491W WO 2022205497 A1 WO2022205497 A1 WO 2022205497A1
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WO
WIPO (PCT)
Prior art keywords
circuit board
power
substrate
control circuit
circuit
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PCT/CN2021/086491
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English (en)
French (fr)
Inventor
雷光寅
范志斌
邹强
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光华临港工程应用技术研发(上海)有限公司
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Publication of WO2022205497A1 publication Critical patent/WO2022205497A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details

Definitions

  • the present application relates to the field of semiconductor technology, and in particular, to a power component.
  • a power semiconductor module is a combination of high-power electronic power devices combined according to certain functions. Power semiconductor modules can achieve different functions depending on the packaged components. Power semiconductor modules include power semiconductor devices, power semiconductor devices are power metal oxide semiconductor field effect transistors (power MOSFETs, often abbreviated as power MOS), insulated gate bipolar transistors (IGBT) and power integrated circuits (power IC, often abbreviated as power MOS) PIC) based. These devices or integrated circuits can work at very high frequencies, and the circuits can be more energy-efficient and material-saving when working at high frequencies, and can greatly reduce the size and weight of the equipment.
  • power MOSFETs power metal oxide semiconductor field effect transistors
  • IGBT insulated gate bipolar transistors
  • PIC power integrated circuits
  • PSOC monolithic power system on a chip
  • the existing power semiconductor modules have a long effective power loop, large parasitic parameters, large switching losses, and low working efficiency.
  • the technical problem to be solved by the present application is to overcome the problems in the prior art that the effective power loop of the power semiconductor module is long, the parasitic parameters are large, the switching loss is large, and the working efficiency is low.
  • the application provides a power assembly, including: a control circuit element, the control circuit element includes a control circuit active element and a control circuit passive element; a power module, the power module includes: a substrate, one side surface of the substrate A power device and a control terminal are arranged thereon, the control terminal has an opposite first end and a second end, the first end is in contact with the substrate; a first circuit board, the first circuit board is located on the substrate and spaced from the substrate, at least part of the passive components of the control circuit are located on the surface of the first circuit board; a conductive connector between the substrate and the first circuit board, the conductive connector One end is electrically connected to the gate of the power device, and the other end of the conductive connector is electrically connected to the passive components of the control circuit on the surface of the first circuit board; the second circuit board located on the side of the power module,
  • the control circuit active element is located on the surface of the second circuit board, the control circuit active element is electrically connected to the first end, and the second end is electrically connected to the
  • the substrate includes a ceramic substrate; the first circuit board and the second circuit board are both PCB circuit boards.
  • the conductive connector includes a conductive thimble.
  • the passive elements of the control circuit include one or more of resistors and capacitors.
  • the area of the first circuit board is smaller than that of the substrate.
  • the area of the first circuit board occupies 5% to 80% of the area of the substrate.
  • the projection area of the first circuit board on the surface of the substrate is located at an edge area of the substrate; the projection area is located at the side of the power device and is spaced from the power device.
  • the distance from the first circuit board to the substrate is 1 mm to 20 mm.
  • a power amplifier unit, a driving chip and an isolation circuit element are further arranged on the second circuit board; the active element of the control circuit is electrically connected to the power amplifier unit, and the power amplifier unit is connected to the driver.
  • the chip is electrically connected, and the driver chip is electrically connected with the isolation circuit element.
  • the power module further includes: a casing, the casing includes a wall plate and a top plate, the wall plate is arranged around the edge of the base plate, and the top plate is located between the base plate and the first circuit board above; part of the edge of the first circuit board is connected with the wall board through a fixing piece.
  • the power assembly includes a first circuit board and a second circuit board, the first circuit board is arranged in the power module to form a part of the power module, and the second circuit board is located in the power module. external.
  • the electrical trend of the power loop is as follows: from the gate of the power device to one end of the conductive connector, after passing through the conductive connector to the passive components of the control circuit on the surface of the first circuit board, and then passing through the first circuit board to the control terminal.
  • the second end is from the second end of the control terminal to the first end of the control terminal, and from the first end of the control terminal to the active element of the control circuit on the second circuit board.
  • the first circuit board and the second circuit board are arranged separately, the position of the passive components of the control circuit on the first circuit board will not be restricted by the power devices on the substrate, nor will it be affected by the active components of the control circuit on the second circuit board. In this way, it is easy to optimize the electrical path in the first circuit board, so that the adjacent circuits on the second circuit board go in the opposite direction to cancel the parasitic parameters.
  • the first circuit board is arranged inside the power module, so that the passive components of the control circuit are not too far away from the power devices. Since the effective loop of the power loop is shortened, the parasitic parameters are effectively reduced, so the switching loss is small and the working efficiency is high.
  • the temperature resistance requirements for the active components of the control circuit on the surface of the second circuit board are reduced, while the control circuit on the surface of the first circuit board has no requirements for temperature resistance.
  • the distance between the source element and the substrate reduces the temperature resistance requirement of the passive elements of the control circuit on the surface of the first circuit board, thus reducing the temperature resistance requirement of the control circuit element.
  • the conductive connector includes a conductive thimble.
  • the passive components of the control circuit and the substrate are connected by conductive thimbles, so that the conductive connectors can electrically connect the power device and the passive components of the control circuit, and also play the role of supporting the first circuit board, which is beneficial to the first circuit board. Stablize.
  • the area of the first circuit board is smaller than that of the substrate.
  • the area of the first circuit board is small, which is conducive to the installation of the first circuit board, avoids the vibration of the first circuit board under the action of gravity, and improves the stability and reliability of the power assembly.
  • the projection area is located at the side of the power device and is spaced apart from the power device. That is, the upper part of the power device is not blocked by the first circuit board, which improves the heat dissipation space of the power device on the surface of the substrate, and further improves the heat dissipation effect of the power component.
  • a part of the edge of the first circuit board is connected to the wall board through a fixing member. The vibration of the first circuit board is prevented, and the stability of the first circuit board is improved.
  • FIG. 1 is a schematic top-view structure diagram of a power component provided by an embodiment of the present application
  • FIG. 2 is a schematic side view structure diagram of a power assembly provided by an embodiment of the present application.
  • FIG. 3 is a schematic three-dimensional structural diagram of a power component provided by an embodiment of the present application.
  • a power semiconductor module with double-layer structure includes a ceramic substrate and a PCB board spaced from the ceramic substrate on the ceramic substrate; the control device is arranged on the surface of the PCB board, and the power device is arranged on the surface of the ceramic substrate, which is beneficial to heat dissipation and improves the product quality. of integration.
  • the PCB board is located inside the power semiconductor module, and the control device is arranged on the surface of the PCB board, and the power semiconductor module has high requirements on the temperature resistance of the device, so the overall temperature resistance of the control device is required.
  • the control devices on the surface of the PCB board include active components and passive components. The selection of the passive components will be limited by the active components, so the position of the passive components cannot be better optimized, resulting in an effective control loop. The loop becomes longer, the parasitic parameters are larger, the switching loss is large, and the working efficiency is low.
  • this embodiment provides a power assembly, including: a control circuit element, the control circuit element includes a control circuit active element and a control circuit passive element; a power module, the power module includes: a substrate, the One side surface of the substrate is provided with a power device and a control terminal, the control terminal has an opposite first end and a second end, the first end is in contact with the substrate; the first circuit board, the first end a circuit board is located on the substrate and is spaced apart from the substrate, at least part of the passive components of the control circuit are located on the surface of the first circuit board; a conductive connector located between the substrate and the first circuit board, One end of the conductive connector is electrically connected to the gate of the power device, and the other end of the conductive connector is electrically connected to the passive components of the control circuit on the surface of the first circuit board; it is located on the side of the power module the second circuit board, the active components of the control circuit are located on the surface of the second circuit board, the active components of the control circuit are electrically connected to the
  • the terms “installed”, “connected” and “connected” should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection connection, or integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, or it can be the internal connection of two components, which can be a wireless connection or a wired connection connect.
  • installed should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection connection, or integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, or it can be the internal connection of two components, which can be a wireless connection or a wired connection connect.
  • This embodiment provides a power component, please refer to FIG. 1 to FIG. 3 in combination, including:
  • control circuit element 3 includes a control circuit active element 301 and a control circuit passive element;
  • the power module 1 includes: a substrate 103, a power device 1031 and a control terminal 1032 are arranged on one side surface of the substrate 103, and the control terminal 1032 has an opposite first end (not marked in the figure) and a second end (not marked in the figure), the second end is in contact with the substrate 103; the first circuit board 101, the first circuit board 101 is located on the substrate 103 and is spaced from the substrate 103, At least part of the passive components 302 of the control circuit are located on the surface of the first circuit board 101 ; the conductive connector 102 is located between the substrate 103 and the first circuit board 101 , and one end of the conductive connector 102 is connected to the The gate of the power device 1031 is electrically connected, and the other end of the conductive connector 102 is electrically connected to the passive element 302 of the control circuit on the surface of the first circuit board 101 ;
  • the power device 1031 includes an IGBT power device or a MOSFET power device.
  • the distance from the first circuit board 101 to the substrate 103 is 1 mm to 20 mm, for example, 1 mm, 5 mm, 10 mm, 15 mm or 20 mm.
  • the substrate 103 includes a ceramic substrate.
  • the first circuit board 101 and the second circuit board 2 are both PCB circuit boards.
  • the power device 1031 is the main heat source.
  • the active components 301 of the control circuit on the surface of the second circuit board 2 are located outside the power module 1, so that the temperature resistance requirements for the active components 301 of the control circuit on the surface of the second circuit board 2 are reduced, while the The control circuit passive components 302 are spaced apart from the substrate 103 , so that the temperature resistance requirements of the control circuit passive components 302 on the surface of the first circuit board 101 are reduced, thus reducing the temperature resistance requirements of the control circuit components 3 .
  • the conductive connector 102 includes a conductive thimble. Specifically, one end of the conductive thimble is electrically connected to the gate of the power device 1031 through a lead wire, and the other end of the conductive thimble is electrically connected to the passive element 302 of the control circuit on the surface of the first circuit board 101. , the passive element 302 of the control circuit on the surface of the first circuit board 101 is electrically connected to the second end of the control terminal 1032, the first end of the control terminal 1032 contacts the substrate 103, and the first end of the control terminal 1032 is connected to the second circuit through the lead wire
  • the control circuit active elements 301 on the surface of the board 2 are electrically connected.
  • the control circuit passive components 302 on the surface of the first circuit board 101 and the substrate 103 are connected by conductive thimbles, so that the conductive connectors 102 can electrically connect the power device 1031 and the control circuit passive components 302, and also play a role in supporting the first circuit.
  • the function of the circuit board 101 is beneficial to the stability of the first circuit board 101 .
  • the passive components 302 of the control circuit include one or more of resistors and capacitors.
  • the area of the first circuit board 101 is smaller than the area of the substrate 103 , specifically, the area of the first circuit board 101 occupies 5% to 80% of the area of the substrate 103 , for example , 5%, 20%, 30%, 50%, 70% or 80%.
  • the area of the first circuit board 101 is small, which is conducive to the installation of the first circuit board 101, prevents the first circuit board 101 from vibrating under the action of gravity, and improves the stability and reliability of the power assembly.
  • the projection area of the first circuit board 101 on the surface of the substrate 103 is located at the edge area of the substrate 103 , specifically, the projection area is located at the side of the power device 1031 and is spaced from the power device 1031 . Since the top of the power device 1031 is not blocked by the first circuit board 101, the heat dissipation space of the power device 1031 on the surface of the substrate 103 is improved, and the heat dissipation effect of the power component is further improved.
  • the power assembly includes a first circuit board 101 and a second circuit board 2.
  • the first circuit board 101 is disposed in the power module 1 to form a part of the power module 1, and the second circuit board 2 is located in the power module 1. Outside of power module 1.
  • the electrical direction of the power loop is as follows: from the gate of the power device 1031 is electrically connected to one end of the conductive connector 102 , after passing through the conductive connector 102 to the passive element 302 of the control circuit on the surface of the first circuit board 101 , and then passing through the first circuit Board 101 to the second end of the control terminal 1032, from the second end of the control terminal 1032 to the first end of the control terminal 1032, from the first end of the control terminal 1032 to the control circuit active element on the second circuit board 2 301.
  • the first circuit board 101 and the second circuit board 2 are arranged separately, the position of the passive components 302 of the control circuit on the first circuit board 101 will not be restricted by the power device 1031 on the substrate 103, nor will it be limited by the second circuit
  • the limitation of the active components 301 of the control circuit on the board 2 can easily optimize the electrical path in the first circuit board 101 so that the adjacent circuits on the second circuit board 2 run in the opposite direction to cancel the parasitic parameters.
  • the first circuit board 101 is arranged inside the power module 1 , so that the passive components 302 of the control circuit are not too far away from the power device 1031 . Since the effective loop of the power loop is shortened, the parasitic parameters are effectively reduced, so the switching loss is small and the working efficiency is high.
  • the power component further includes a heat dissipation base plate 5 , and a side surface of the substrate 103 facing away from the first circuit board 101 is in contact with the heat dissipation base plate 5 .
  • the heat dissipation base plate 5 includes a copper heat dissipation base plate, an aluminum heat dissipation base plate, and an aluminum silicon carbide heat dissipation base plate.
  • the heat dissipation base plate 5 is beneficial to conduct away the heat generated by the power device 1031 .
  • the power module 1 further includes: a casing 4 , the casing 4 includes a wall plate and a top plate (not shown in the figures), and the wall plate is arranged around the edge of the base plate 103 , so The top board is located above the base plate 103 and the first circuit board 101 ; a part of the edge of the first circuit board 101 is connected to the wall board through the fixing member 6 .
  • the power module 1 further includes: a power terminal 1033 , and the power terminal 1033 is electrically connected to the power device 1031 .
  • a part of the area between the two ends of the power terminal 1033 is embedded in the wall plate, and a part of the area between the first end and the second end of the control terminal 1032 is embedded in the wall plate, which is beneficial to the power terminals 1033 and the Control the stability of terminal 1032.
  • the fixing member 6 is a bolt.
  • Part of the edge of the first circuit board 101 is connected to the wall board through the fixing member 6 .
  • the vibration of the first circuit board 101 is prevented, and the stability of the first circuit board 101 is improved.
  • the second circuit board 2 is also provided with a power amplifier unit, a drive chip and an isolation circuit element; the control circuit active element 301 is electrically connected to the power amplifier unit, and the power amplifier unit is electrically connected to the drive chip connected, the driver chip is electrically connected to the isolation circuit element.
  • the isolation circuit element is used for high voltage isolation.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
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Abstract

本申请提供一种功率组件，包括：控制电路元件，控制电路元件包括控制电路有源元件和控制电路无源元件；功率模块，功率模块包括：基板，基板的一侧表面上设有功率器件和控制端子；第一电路板，第一电路板位于基板上且与基板间隔，至少部分控制电路无源元件位于第一电路板表面；位于基板和第一电路板之间的导电连接件，导电连接件的一端与功率器件的栅极电学连接，导电连接件的另一端与控制电路无源元件电学连接；位于功率模块侧部的第二电路板，控制电路有源元件位于第二电路板表面，控制电路有源元件与控制端子的第一端电学连接，控制端子的第二端与第一电路板电学连接。功率组件开关损耗小，工作效率高，且降低了控制电路元件的耐温要求。

Description

一种功率组件 技术领域
本申请涉及半导体技术领域，具体涉及一种功率组件。
背景技术
功率半导体模块是大功率电子电力器件按一定的功能组合的组合体。功率半导体模块可根据封装的元器件的不同实现不同功能。功率半导体模块包括功率半导体器件，功率半导体器件以功率金属氧化物半导体场效应晶体管(功率MOSFET，常简写为功率MOS)、绝缘栅双极晶体管(IGBT)以及功率集成电路(power IC，常简写为PIC)为主。这些器件或集成电路能在很高的频率下工作，而电路在高频工作时能更节能、节材，能大幅减少设备体积和重量。尤其是集成度很高的单片片上功率系统(power system on a chip，简写PSOC)，它能把传感器件与电路、信号处理电路、接口电路、功率器件和电路等集成在一个硅芯片上，使其具有按照负载要求精密调节输出和按照过热、过压、过流等情况自我进行保护的智能功能。
然而，现有功率半导体模块的有效功率回路长，寄生参数大，开关损耗大，工作效率低。
发明内容
因此，本申请要解决的技术问题在于克服现有技术中功率半导体模块的有效功率回路长，寄生参数大，开关损耗大，工作效率低的问题。
本申请提供一种功率组件，包括：控制电路元件,所述控制电路元件包括控制电路有源元件和控制电路无源元件；功率模块，所述功率模块包括：基板，所述基板的一侧表面上设有功率器件和控制端子，所述控制端子具有相对的第一端和第二端，所述第一端与所述基板接触；第一电路板，所 述第一电路板位于所述基板上且与所述基板间隔，至少部分所述控制电路无源元件位于所述第一电路板表面；位于所述基板和所述第一电路板之间的导电连接件，所述导电连接件的一端与所述功率器件的栅极电学连接，所述导电连接件的另一端与所述第一电路板表面的控制电路无源元件电学连接；位于所述功率模块侧部的第二电路板，所述控制电路有源元件位于所述第二电路板表面，所述控制电路有源元件与所述第一端电学连接，所述第二端与所述第一电路板电学连接。
可选的，所述基板包括陶瓷基板；所述第一电路板和第二电路板均为PCB电路板。
可选的，所述导电连接件包括导电顶针。
可选的，所述控制电路无源元件包括电阻和电容中的一种或者多种。
可选的，所述第一电路板的面积小于所述基板的面积。
可选的，所述第一电路板的面积占据所述基板的面积的5％至80％。
可选的，所述第一电路板在所述基板表面上的投影区位于所述基板的边缘区域；所述投影区位于所述功率器件的侧部且与所述功率器件间隔。
可选的，所述第一电路板至所述基板的距离为1㎜至20㎜。
可选的，所述第二电路板上还设置有功率放大器单元、驱动芯片和隔离电路元件；所述控制电路有源元件与所述功率放大器单元电学连接，所述功率放大器单元与所述驱动芯片电学连接，所述驱动芯片与所述隔离电路元件电学连接。
可选的，所述功率模块还包括：壳体，所述壳体包括壁板和顶板，所述壁板围绕所述基板的边缘设置，所述顶板位于所述基板和所述第一电路板的上方；所述第一电路板的部分边缘通过固定件与所述壁板连接。
本申请的技术方案具有以下有益效果：
1.本申请技术方案提供的功率组件，功率组件包括第一电路板和第二电路板，第一电路板设置在所述功率模块内构成功率模块的一部分，而第二电路板位于功率模块的外部。功率回路的电学走向为：自功率器件的栅极电学连接至导电连接件的一端，经过导电连接件之后至第一电路板表面 的控制电路无源元件，之后经过第一电路板至控制端子的第二端，从控制端子的第二端至控制端子的第一端，从控制端子的第一端再到第二电路板上的控制电路有源元件。由于第一电路板和第二电路板单独设置，这样第一电路板上的控制电路无源元件的位置不会受到基板上功率器件的限制，也不会受到第二电路板上控制电路有源元件的限制，这样能容易做到优化第一电路板中电学路径，使得第二电路板上相邻的电路走向反向以抵消寄生参数。其次第一电路板设置在功率模块内部，这样使得控制电路无源元件距离所述功率器件的之间不至于过远。由于功率回路的有效回路变短，有效的降低了寄生参数，因此开关损耗小，工作效率高。其次，由于第二电路板表面的控制电路有源元件位于所述功率模块外部，这样对第二电路板表面的控制电路有源元件的耐温要求降低，而第一电路板表面的控制电路无源元件至基板间隔，这样对第一电路板表面的控制电路无源元件的耐温要求降低，因此降低了控制电路元件的耐温要求。
2.进一步，导电连接件包括导电顶针。控制电路无源元件和基板之间通过导电顶针连接，可以使导电连接件电学连接功率器件和控制电路无源元件的同时，还起到支撑第一电路板的作用，有利于第一电路板的稳定。
3.进一步，所述第一电路板的面积小于所述基板的面积。第一电路板的面积较小，有利于第一电路板安装，避免第一电路板在重力的作用下振动，提高了功率组件的稳定性和可靠性。
4.进一步，所述投影区位于所述功率器件的侧部且与所述功率器件间隔。也就是功率器件的上方没有被第一电路板遮挡，提高了基板表面功率器件的散热空间，进一步提高了功率组件的散热效果。
5.进一步，所述第一电路板的部分边缘通过固定件与所述壁板连接。防止第一电路板发生振动，提高了第一电路板的稳定性。
附图说明
为了更清楚地说明本申请具体实施方式或现有技术中的技术方案，下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍， 显而易见地，下面描述中的附图是本申请的一些实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请一实施例提供的功率组件的俯视结构示意图；
图2为本申请一实施例提供的功率组件的侧视结构示意图；
图3为本申请一实施例提供的功率组件的立体结构示意图。
具体实施方式
一种双层结构的功率半导体模块，包括陶瓷基板和位于陶瓷基板上与陶瓷基板间隔的PCB板；控制器件设置在PCB板表面，功率器件设置在陶瓷基板表面，既有利于散热又提高了产品的集成度。
然而，上述结构中，一方面，PCB板位于功率半导体模块内部，控制器件设置在PCB板表面，而功率半导体模块对于器件的耐温要求较高，因此对控制器件的整体耐温要求较高；另一方面，PCB板表面的控制器件包括有源元件和无源元件，无源元件位置的选择会受到有源元件的限制，这样无法更好的优化无源元件的位置，导致控制回路的有效回路变长，寄生参数较大，开关损耗大，工作效率低。
在此基础上，本实施例提供一种功率组件，包括：控制电路元件,所述控制电路元件包括控制电路有源元件和控制电路无源元件；功率模块，所述功率模块包括：基板，所述基板的一侧表面上设有功率器件和控制端子，所述控制端子具有相对的第一端和第二端，所述第一端与所述基板接触；第一电路板，所述第一电路板位于所述基板上且与所述基板间隔，至少部分所述控制电路无源元件位于所述第一电路板表面；位于所述基板和所述第一电路板之间的导电连接件，所述导电连接件的一端与所述功率器件的栅极电学连接，所述导电连接件的另一端与所述第一电路板表面的控制电路无源元件电学连接；位于所述功率模块侧部的第二电路板，所述控制电路有源元件位于所述第二电路板表面，所述控制电路有源元件与所述第一端电学连接，所述第二端与所述第一电路板电学连接。所述功率组件开关 损耗小，工作效率高，且降低了控制电路元件的耐温要求。
下面将结合附图对本申请的技术方案进行清楚、完整地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
在本申请的描述中，需要说明的是，术语“中心”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”、“第三”仅用于描述目的，而不能理解为指示或暗示相对重要性。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，还可以是两个元件内部的连通，可以是无线连接，也可以是有线连接。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。
此外，下面所描述的本申请不同实施方式中所涉及的技术特征只要彼此之间未构成冲突就可以相互结合。
本实施例提供一种功率组件，请结合参考图1至图3，包括：
控制电路元件3，所述控制电路元件3包括控制电路有源元件301和控制电路无源元件；
功率模块1，所述功率模块1包括：基板103，所述基板103的一侧表面上设有功率器件1031和控制端子1032，所述控制端子1032具有相对的第一端(图中未标示)和第二端(图中未标示)，所述第二端与所述基板103接触；第一电路板101，所述第一电路板101位于所述基板103上且与所述基板103间隔，至少部分所述控制电路无源元件302位于所述第一电路板101表面；位于所述基板103和所述第一电路板101之间的导电连接件102， 所述导电连接件102的一端与所述功率器件1031的栅极电学连接，所述导电连接件102的另一端与所述第一电路板101表面的控制电路无源元件302电学连接；
位于所述功率模块1侧部的第二电路板2，所述控制电路有源元件301位于所述第二电路板2表面，所述控制电路有源元件301与所述第一端电学连接，所述第二端与所述第一电路板101电学连接。
功率器件1031包括IGBT功率器件或者MOSFET功率器件。
所述第一电路板101至所述基板103的距离为1㎜至20㎜，例如，1㎜、5㎜、10㎜、15㎜或者20㎜。
所述基板103包括陶瓷基板。所述第一电路板101和第二电路板2均为PCB电路板。
本实施例中，功率器件1031为主要的发热源。第二电路板2表面的控制电路有源元件301位于所述功率模块1外部，这样对第二电路板2表面的控制电路有源元件301的耐温要求降低，而第一电路板101表面的控制电路无源元件302至基板103间隔，这样对第一电路板101表面的控制电路无源元件302的耐温要求降低，因此降低了控制电路元件3的耐温要求。
所述导电连接件102包括导电顶针，具体地，导电顶针的一端通过引线与功率器件1031的栅极电学连接，导电顶针的另一端与第一电路板101表面的控制电路无源元件302电学连接，第一电路板101表面的控制电路无源元件302与控制端子1032的第二端电学连接，控制端子1032的第一端接触基板103，并且控制端子1032的第一端通过引线与第二电路板2表面上的控制电路有源元件301电学连接。
第一电路板101表面的控制电路无源元件302和基板103之间通过导电顶针连接，可以使导电连接件102电学连接功率器件1031和控制电路无源元件302的同时，还起到支撑第一电路板101的作用，有利于第一电路板101的稳定。
所述控制电路无源元件302包括电阻和电容中的一种或者多种。
在一个实施例中，所述第一电路板101的面积小于所述基板103的面 积，具体地，所述第一电路板101的面积占据所述基板103的面积的5％至80％，例如，5％、20％、30％、50％、70％或者80％。
第一电路板101的面积较小，有利于第一电路板101安装，避免第一电路板101在重力的作用下产生振动，提高了功率组件的稳定性和可靠性。
所述第一电路板101在所述基板103表面上的投影区位于所述基板103的边缘区域，具体地，所述投影区位于所述功率器件1031的侧部且与所述功率器件1031间隔。由于功率器件1031的上方没有被第一电路板101遮挡，提高了基板103表面的功率器件1031的散热空间，进一步提高了功率组件的散热效果。
本实施例提供的功率组件，功率组件包括第一电路板101和第二电路板2，第一电路板101设置在所述功率模块1内构成功率模块1的一部分，而第二电路板2位于功率模块1的外部。功率回路的电学走向为：自功率器件1031的栅极电学连接至导电连接件102的一端，经过导电连接件102之后至第一电路板101表面的控制电路无源元件302，之后经过第一电路板101至控制端子1032的第二端，从控制端子1032的第二端至控制端子1032的第一端，从控制端子1032的第一端再到第二电路板2上的控制电路有源元件301。由于第一电路板101和第二电路板2单独设置，这样第一电路板101上的控制电路无源元件302的位置不会受到基板103上功率器件1031的限制，也不会受到第二电路板2上控制电路有源元件301的限制，这样能容易做到优化第一电路板101中电学路径，使得第二电路板2上相邻的电路走向反向以抵消寄生参数。其次第一电路板101设置在功率模块1内部，这样使得控制电路无源元件302距离所述功率器件1031的之间不至于过远。由于功率回路的有效回路变短，有效的降低了寄生参数，因此开关损耗小，工作效率高。
请参考图2，功率组件还包括散热底板5，基板103背向第一电路板101的一侧表面与散热底板5接触。
散热底板5包括铜散热底板、铝散热底板、铝碳化硅散热底板。
散热底板5有利于导走功率器件1031产生的热量。
结合参考图1和图3，功率模块1还包括：壳体4，所述壳体4包括壁板和顶板(图中未示出)，所述壁板围绕所述基板103的边缘设置，所述顶板位于所述基板103和所述第一电路板101的上方；所述第一电路板101的部分边缘通过固定件6与所述壁板连接。
功率模块1还包括：功率端子1033，功率端子1033与功率器件1031电学连接。
本实施例中，功率端子1033的两端之间的部分区域镶嵌在壁板中，控制端子1032的第一端和第二端之间的部分区域镶嵌在壁板中，有利于功率端子1033和控制端子1032的稳定性。
在一个实施方式中，固定件6为螺栓。
所述第一电路板101的部分边缘通过固定件6与所述壁板连接。防止第一电路板101发生振动，提高了第一电路板101的稳定性。
所述第二电路板2上还设置有功率放大器单元、驱动芯片和隔离电路元件；所述控制电路有源元件301与所述功率放大器单元电学连接，所述功率放大器单元与所述驱动芯片电学连接，所述驱动芯片与所述隔离电路元件电学连接。所述隔离电路元件用于高压隔离。
显然，上述实施例仅仅是为清楚地说明所作的举例，而并非对实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本申请的保护范围之中。

Claims (10)

  1. 一种功率组件，其特征在于，包括：
    控制电路元件,所述控制电路元件包括控制电路有源元件和控制电路无源元件；
    功率模块，所述功率模块包括：基板，所述基板的一侧表面上设有功率器件和控制端子，所述控制端子具有相对的第一端和第二端，所述第一端与所述基板接触；第一电路板，所述第一电路板位于所述基板上且与所述基板间隔，至少部分所述控制电路无源元件位于所述第一电路板表面；位于所述基板和所述第一电路板之间的导电连接件，所述导电连接件的一端与所述功率器件的栅极电学连接，所述导电连接件的另一端与所述第一电路板表面的控制电路无源元件电学连接；
    位于所述功率模块侧部的第二电路板，所述控制电路有源元件位于所述第二电路板表面，所述控制电路有源元件与所述第一端电学连接，所述第二端与所述第一电路板电学连接。
  2. 根据权利要求1所述的功率组件，其特征在于，所述基板包括陶瓷基板；所述第一电路板和第二电路板均为PCB电路板。
  3. 根据权利要求1所述的功率组件，其特征在于，所述导电连接件包括导电顶针。
  4. 根据权利要求1所述的功率组件，其特征在于，所述控制电路无源元件包括电阻和电容中的一种或者多种。
  5. 根据权利要求1所述的功率组件，其特征在于，所述第一电路板的面积小于所述基板的面积。
  6. 根据权利要求5所述的功率组件，其特征在于，所述第一电路板的面积占据所述基板的面积的5％至80％。
  7. 根据权利要求5所述的功率组件，其特征在于，所述第一电路板在所述基板表面上的投影区位于所述基板的边缘区域；所述投影区位于所述功率器件的侧部且与所述功率器件间隔。
  8. 根据权利要求1所述的功率组件，其特征在于，所述第一电路板至 所述基板的距离为1㎜至20㎜。
  9. 根据权利要求1所述的功率组件，其特征在于，所述第二电路板上还设置有功率放大器单元、驱动芯片和隔离电路元件；所述控制电路有源元件与所述功率放大器单元电学连接，所述功率放大器单元与所述驱动芯片电学连接，所述驱动芯片与所述隔离电路元件电学连接。
  10. 根据权利要求1至9任意一项所述的功率组件，其特征在于，所述功率模块还包括：壳体，所述壳体包括壁板和顶板，所述壁板围绕所述基板的边缘设置，所述顶板位于所述基板和所述第一电路板的上方；
    所述第一电路板的部分边缘通过固定件与所述壁板连接。
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