WO2022201279A1 - 半導電性部材、固定子コイルおよび回転電機 - Google Patents

半導電性部材、固定子コイルおよび回転電機 Download PDF

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Publication number
WO2022201279A1
WO2022201279A1 PCT/JP2021/011847 JP2021011847W WO2022201279A1 WO 2022201279 A1 WO2022201279 A1 WO 2022201279A1 JP 2021011847 W JP2021011847 W JP 2021011847W WO 2022201279 A1 WO2022201279 A1 WO 2022201279A1
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WIPO (PCT)
Prior art keywords
metal particles
semiconductive
resin
stator coil
layer
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Ceased
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PCT/JP2021/011847
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English (en)
French (fr)
Japanese (ja)
Inventor
拓実 安田
貴裕 馬渕
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to PCT/JP2021/011847 priority Critical patent/WO2022201279A1/ja
Priority to US18/276,656 priority patent/US12470103B2/en
Priority to CN202180095900.7A priority patent/CN116982240A/zh
Priority to JP2023508196A priority patent/JP7536178B2/ja
Publication of WO2022201279A1 publication Critical patent/WO2022201279A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02K—DYNAMO-ELECTRIC MACHINES
    • H02K3/00—Details of windings
    • H02K3/42—Means for preventing or reducing eddy-current losses in the winding heads, e.g. by shielding
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02K—DYNAMO-ELECTRIC MACHINES
    • H02K3/00—Details of windings
    • H02K3/02—Windings characterised by the conductor material

Definitions

  • This application relates to semi-conductive members, stator coils, and rotating electric machines.
  • the main insulating layer that covers the conductor part where the wire conductors are bundled is used to suppress the corona discharge that occurs in the minute space between the iron core and the main insulating layer.
  • a semiconductive layer wound with a semiconductive tape is disposed on the outer layer. This semi-conductive tape plays a role in reducing the voltage distributed to the minute space on the surface of the core by alleviating the potential gradient between the core and the main insulating layer.
  • the semiconductive tape is produced by disposing a semiconductive resin layer in which conductive particles such as carbon black are added to a resin on a fibrous insulating base material such as glass cloth or nonwoven fabric.
  • a semiconductive resin layer in which at least one inorganic particle selected from layered clay mineral particles, oxide particles, and nitride particles is added to a resin is used as a fibrous insulation.
  • a semiconductive tape applied to a substrate has been disclosed (see, for example, US Pat. Further, a semi-conductive tape is disclosed in which a mixture of conductive particles and non-conductive nanoparticles added to a polymer is placed on a fibrous insulating substrate (see, for example, Patent Document 2).
  • JP 2006-246599 A (paragraph 0008, FIG. 1)
  • International patent WO2018/002974 (paragraph 0050, FIG. 4)
  • Deterioration caused by partial discharge is broadly classified into impact by charged particles, thermal decomposition by local temperature rise, and chemical action by activated gas generated by discharge. These act synergistically to progress deterioration. do.
  • activated gases such as ozone (O 3 ) and atomic oxygen (O) generated by electrical discharge
  • O 3 ozone
  • O atomic oxygen
  • the semiconductive tapes disclosed in the above patent documents can be expected to improve the initial corona resistance, etc., but the organic resins and high molecular weight polymers are not suitable for the above partial discharge. Due to the oxidation action of ozone and atomic oxygen generated in the process, it deteriorates quickly and decomposes into low-molecular volatile products, so it is difficult to maintain initial corona resistance over a long period of time. there were.
  • the present application discloses a technique for solving the above problems, and aims to provide a semiconductive member, a stator coil, and a rotating electric machine that can exhibit stable corona resistance over a long period of time. .
  • the semiconductive member disclosed in the present application is a semiconductive member in which a semiconductive resin layer in which metal particles are dispersed and mixed is arranged on a fibrous insulating base material, and the metal particles are made of a thermosetting resin. has a melting point higher than the curing temperature of the fibrous insulating base material and lower than the softening point of the fibrous insulating base material.
  • the stator coil disclosed in the present application includes a conductor portion in which strand conductors are bundled, an insulating layer formed by winding a mica member around the outer circumference of the conductor portion, and the semiconductive member described above wound around the outer circumference of the insulating layer. It is characterized by having windings formed from a semi-conductive layer formed by winding, and the thermosetting resin impregnated in the windings.
  • a rotating electrical machine disclosed in the present application is characterized by comprising the stator coil described above.
  • FIG. 1 is a schematic cross-sectional view showing the configuration of a semiconductive tape according to Embodiment 1.
  • FIG. 4 is a schematic cross-sectional view showing another configuration of the semiconductive tape according to Embodiment 1.
  • FIG. 4 is a flow chart diagram showing a manufacturing process of the semiconductive tape according to Embodiment 1.
  • FIG. 1 is a schematic cross-sectional view showing the configuration of a semiconductive tape evaluation apparatus according to Embodiment 1.
  • FIG. 1 is a schematic cross-sectional view showing the configuration of a semiconductive tape 1 according to Embodiment 1 of the present application.
  • a semiconductive tape 1 as a semiconductive member includes semiconductive resin layers 14a and 14b in which metal particles 2 as conductive particles are dispersed and mixed in thermosetting resins 3a and 3b. are held on both sides of the fibrous insulating base material 4, respectively.
  • the feature of the semiconductive tape 1 according to the first embodiment is that the melting point of the metal particles 2 is higher than the curing temperature of the thermosetting resin to be impregnated, and is higher than the softening point of the fibrous insulating base material 4.
  • the object is to use low-melting-point metal particles in a low range.
  • FIG. 2 is a schematic cross-sectional view showing the configuration of the stator coil 6 using the semiconductive tape 1 according to Embodiment 1.
  • the stator coil 6 includes a conductor portion 7 in which wire conductors are bundled, a main insulating layer 8 formed by winding a mica tape around the outer periphery of the conductor portion 7, and a main insulating layer 8.
  • a winding composed of a semiconductive layer 9 formed by winding a semiconductive tape 1 on the outside is impregnated under pressure using an electrical insulating varnish, and then heat-cured.
  • the stator coil 6 shown in FIG. 2 is applied to a rotating electric machine such as a motor.
  • application examples of the semi-conductive tape 1 of the present application are not limited to the semi-conductive layer of the stator coil in the above-described rotating machine stator, etc. It can be used for various applications such as materials.
  • FIG. 3 is a schematic cross-sectional view showing another configuration of the semiconductive tape 1 according to Embodiment 1 of the present application, and is an enlarged view of area A in FIG.
  • the metal particles 2 are locally unevenly distributed in the thermosetting resin 3b. good too.
  • the metal particles 2 are unevenly distributed on the interface side with the main insulating layer 8. As shown in FIG. In this case, when an electric discharge occurs inside the void existing at the interface between the main insulating layer and the semiconducting layer, the metal particles 2 can be melted and connected with adjacent particles, resulting in higher ozone resistance. It becomes easier to form conductivity, and the corona resistance of the thermosetting resin can be improved.
  • FIG. 4 is also a schematic cross-sectional view showing another configuration of the semiconductive tape 1 according to Embodiment 1 of the present application, and is an enlarged view of region A in FIG.
  • a semiconductive resin layer 14c in which metal particles 2 are dispersed and mixed in a thermosetting resin 3c, and other conductive particles 5 are thermoset.
  • a semiconductive resin layer composed of semiconductive resin layers 14a and 14b dispersed and mixed in the conductive resins 3a and 3b may also be used.
  • the metal particles 2 are unevenly distributed in the semiconductive resin layer 14c on the interface side with the main insulating layer 8. FIG.
  • the metal particles 2 can be melted and connected to nearby particles, thereby further improving the ozone resistance. It becomes easy to form the conductivity that it has, and it is possible to improve the corona resistance of the thermosetting resin.
  • the surface resistance value is desirably in the range of 100 ⁇ or more and 100k ⁇ or less. If the surface resistance value is less than 100 ⁇ , eddy currents are generated on the surface of the semiconductive layer during actual operation, which is not preferable.
  • Metal particles As the metal particles 2, low-melting metal particles having a curing temperature higher than the curing temperature of the thermosetting resin impregnated in the stator coil manufacturing process and lower than the softening point of the fibrous insulating base material 4 are used. This allows the metal particles 2 to melt due to the local temperature rise caused by the partial discharge.
  • the metal particles 2 include low-melting-point metals such as composite components containing Pb--Sn, composite components containing Sn--Sb, composite components containing Sn--Cu, and composite components containing Sn--Ag. These metal particles 2 are melted by heating to 200° C. or higher, which is higher than the curing temperature (100 to 190° C.) of the thermosetting resin that is generally impregnated in the manufacturing process of the stator coil (200° C.). °C or higher).
  • the melting point is the temperature at which the metal undergoes a phase transformation from solid to liquid when heated from room temperature. Defined as the melting point of the metal.
  • the composition of the Pb is 0 mass% or more (including the case of Sn alone), 2.5 mass% or less, 75 mass% or more and 100 mass% or less (Pb It is more desirable to include it in the range of (including the case of a single substance). At 2.5 mass% or more and less than 75 mass%, the melting point is below 200°C even when various additive elements are added. Desired electrical insulation properties of the child coil 6 are not obtained.
  • the composition preferably contains Sn in the range of 25 mass% or more and 100 mass% or less (including the case of single Sn).
  • the composition preferably contains Sn in the range of 15 mass % or more and 100 mass % or less (including single Sn). Outside the above range, the melting point exceeds 700° C. even when various additive elements are added, so the melting action during discharge does not occur, and the desired effect of improving ozone resistance described later cannot be obtained.
  • the metal particles 2 can be used singly or as a mixture of two or more types including other conductive particles.
  • Conductive particles can be appropriately used as long as they are particles having conductivity, and the type thereof is not particularly limited. Examples include carbon black, graphite, conductive diamond, carbon fiber, carbon nanotube, and the like.
  • Conductive carbon materials or conductive metal oxides such as indium oxide, cadmium oxide, triiron tetroxide, zinc oxide, tin oxide, titanium oxide, metals, etc. are used.
  • the metal particles 2 low-melting metal particles having a melting point in a temperature range higher than the curing temperature of the thermosetting resin to be impregnated and lower than the softening point of the fibrous insulating base material 4 are used. Even when the metal particles 2 having a melting temperature range are dispersed in the thermosetting resin 3, if a partial discharge occurs starting from the void, the deterioration effect of the partial discharge (the oxidation effect of ozone and atomic oxygen) occurs. As a result, the thermosetting resin 3 is oxidatively decomposed into low volatility products.
  • the metal particles 2 existing in the vicinity of the void melt and spread along the inner surface of the void, and the melted metal particles 2 in the vicinity are bonded together. , the inner surfaces of the voids are coated with metal particles. Therefore, the metal particles coated on the inner surfaces of the voids function as a protective layer, thereby suppressing thermal decomposition of the thermosetting resin 3 around the voids and exhibiting corona resistance.
  • the corona resistance of the thermosetting resin 3 can be improved. Therefore, it is possible to exhibit stable corona resistance over a long period of time and maintain the initial resistance value of the semiconductive tape 1 .
  • the average particle diameter of the metal particles 2 is preferably 1 nm or more and 10 ⁇ m or less, more preferably 10 nm or more and 1 ⁇ m or less, in median diameter (50% diameter, D50).
  • Examples of the method for measuring the average particle size when defining the above range include a laser diffraction scattering method particle size distribution apparatus (Microtrac (registered trademark) MT3300). If the average particle size of the metal particles 2 is smaller than 1 nm, the volume melted when the temperature rises locally due to partial discharge becomes small, and the above-described desired ozone resistance cannot be exhibited. On the other hand, when the average particle size of the metal particles 2 exceeds 10 ⁇ m, the distance between the particles increases proportionally, making it difficult to connect with neighboring particles when generating heat due to discharge. unable to demonstrate sexuality.
  • the metal particles 2 are dispersed in the thermosetting resin 3, and the amount of the metal particles 2 to be blended is preferably in the range of 1 to 50 vol% with respect to the thermosetting resin 3. If the amount of the metal particles 2 is less than 1 vol % with respect to the thermosetting resin 3, the desired corona resistance cannot be exhibited. On the other hand, if the amount of the metal particles 2 exceeds 50 vol % with respect to the thermosetting resin 3, the viscosity of the thermosetting resin 3 increases, making it difficult to disperse the metal particles 2 uniformly. , the thermosetting resin 3 becomes brittle and difficult to use as a tape.
  • the metal particles 2 are locally unevenly distributed in the vicinity of one side surface of the semiconductive tape 1, It is desirable that the average particle-to-particle distance between the metal particles 2 is less than 1 ⁇ m. If the average particle-to-particle distance of the metal particles 2 exceeds 1 ⁇ m, it becomes difficult for the metal particles 2 to connect with adjacent particles when generating heat due to discharge, and the above-described desired corona resistance cannot be exhibited.
  • the surfaces of the metal particles 2 are coated with a coupling agent or a surface treatment agent. It may be modified or coated before use.
  • Such coupling agents include, for example, ⁇ -glycidoxy-propyltrimethoxysilane, ⁇ -aminopropyl-trimethoxysilane, vinyltriethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-glycidyloxypropyl-trimethoxysilane.
  • Examples include silane coupling agents such as methoxysilane, titanate coupling agents, and aluminum coupling agents.
  • Surface treatment agents include aluminum laurate, aluminum stearate, iron-alumina stearate, silica, zirconia, and silicone. These coupling agents or surface treatment agents can be used alone or as a mixture of two or more.
  • thermosetting resin 3 any thermosetting resin that is flexible even after being applied to the fibrous insulating base material 4 can be used as appropriate, and the type thereof is not particularly limited.
  • Thermosetting resins 3 having such properties include, for example, phenol resins, imide resins, alkyd resins, unsaturated polyester resins, polyesterimide resins, and epoxy resins.
  • any material can be appropriately used as long as it has insulating properties and can be coated with a thermosetting resin, and the type thereof is not particularly limited.
  • the fibrous insulating base material 4 having such properties includes, for example, glass cloth (softening point 950° C.), polyester cloth (softening point 240° C.), Tetron cloth (softening point 260° C.), mica sheet (softening point 750° C.). °C) and the like.
  • additives may be blended as necessary as the constituent materials of the semiconductive tape 1 according to Embodiment 1, as long as the effects of the present application are not hindered.
  • Other additives blended as materials for the semiconductive tape 1 include reactive diluents, viscosity modifiers such as toluene and xylene, curing accelerators, anti-sagging agents, anti-settling agents, anti-foaming agents, leveling agents, Slip agents, dispersant-based wetting agents, and the like.
  • FIG. 5 is a flowchart showing manufacturing steps in the method for manufacturing the semiconductive tape 1 according to the first embodiment.
  • thermosetting resin 3 and the metal particles 2 are kneaded (step S501). It is desirable that the step of kneading the metal particles 3 into the thermosetting resin 3 is performed by applying a shearing force. It is possible to uniformly disperse the metal particles 3 in the thermosetting resin 3 by applying a shearing force.
  • any device that can mix while applying a shearing force can be used as appropriate, and the type is not particularly limited. Specific examples include bead mill mixers, three-roll mill mixers, homogenizer mixers, labo plastomill mixers, and the like.
  • a curing agent is added to and mixed with the mixture of the thermosetting resin 3 and the metal particles 2 (step S502). After mixing, it is applied to the fibrous insulating base material 4 (step S503) and heat-cured (step S504) to obtain the desired semiconductive tape 1.
  • FIG. 1 A curing agent is added to and mixed with the mixture of the thermosetting resin 3 and the metal particles 2 (step S502). After mixing, it is applied to the fibrous insulating base material 4 (step S503) and heat-cured (step S504) to obtain the desired semiconductive tape 1.
  • the coupling agent or surface treatment agent described above is appropriately added and mixed as necessary.
  • the interface between the thermosetting resin 3 and the metal particles 2 can be firmly adhered.
  • the organic compound present at the interface imparts affinity to the epoxy resin, and the metal particles 2 are uniformly dispersed in the thermosetting resin 3. becomes possible.
  • the semiconductive resin layers 14a and 14b in which the metal particles 2 are dispersed are arranged on the fibrous insulating substrate 4.
  • the metal particles 2 have a melting point higher than the curing temperature of the thermosetting resin to be impregnated and lower than the softening point of the fibrous insulating base material 4.
  • the stator coil 6 according to the first embodiment the conductor portion 7 in which the wire conductors are bundled, the main insulating layer 8 formed by winding the mica tape around the outer circumference of the conductor portion 7, and the outer circumference of the main insulating layer 8 and a thermosetting resin impregnated in the winding.
  • the stator coil since the stator coil is provided, heat generation and discharge during operation of the rotary electric machine consumes the thermosetting resin and impairs the semiconductivity. It is possible to suppress things like putting away.
  • the metal particles develop resistance to activated gases such as ozone and atomic oxygen generated by partial discharge inside the voids, and suppress the deterioration of the thermosetting resin over time. sexuality is exhibited.
  • Example 2 Pb-Sn (Pb95-Sn5, manufactured by Mitsui Kinzoku Co., Ltd.) type metal particles with a melting point of 300 ° C. are added to an epoxy resin (bisphenol A type epoxy resin, manufactured by Mitsubishi Chemical Co., Ltd.), and a mixing device (ultrasonic homogenizer, Japan Alex) was used to mix while applying a shearing force.
  • a curing agent modified alicyclic amine, manufactured by Mitsubishi Chemical Corporation
  • the semiconductive tape 1 was produced by coating it on a glass cloth, which is a fibrous insulating base material, and heating and drying it.
  • Sn—Cu (Sn40—Cu60) metal particles with a melting point of 600° C. are added to an epoxy resin (bisphenol A type epoxy resin, manufactured by Mitsubishi Chemical Corporation) using a mixer (ultrasonic homogenizer, manufactured by Alex Japan). The mixture was mixed while applying shear force.
  • a curing agent modified alicyclic amine, manufactured by Mitsubishi Chemical Corporation
  • the semiconductive tape 1 was produced by coating it on a glass cloth, which is a fibrous insulating base material, and heating and drying it.
  • Sn-Cu (Sn25-Cu75) metal particles with a melting point of 700 ° C. are added to an epoxy resin (bisphenol A type epoxy resin, manufactured by Mitsubishi Chemical Corporation) using a mixing device (ultrasonic homogenizer, manufactured by Alex Japan). The mixture was mixed while applying shear force.
  • a curing agent modified alicyclic amine, manufactured by Mitsubishi Chemical Corporation
  • the semiconductive tape 1 was produced by coating it on a glass cloth, which is a fibrous insulating base material, and heating and drying it.
  • Example 5 A silicone resin (manufactured by Shin-Etsu Silicone Co., Ltd.) is mixed with Pb-Sn (Pb2.5-Sn97.5, manufactured by Mitsui Kinzoku Co., Ltd.)-based metal particles having a melting point of 200 ° C., and a mixing device (ultrasonic homogenizer, manufactured by Nippon Alex) ) was used to mix while applying shear force. After that, the semiconductive tape 1 was produced by coating it on a glass cloth, which is a fibrous insulating base material, and heating and drying it.
  • Pb-Sn Pb2.5-Sn97.5, manufactured by Mitsui Kinzoku Co., Ltd.
  • a mixing device ultrasonic homogenizer, manufactured by Nippon Alex
  • Pb-Sn (Pb2.5-Sn97.5, manufactured by Mitsui Kinzoku Co., Ltd.) type metal particles with a melting point of 200 ° C. are added to an epoxy resin (bisphenol A type epoxy resin, manufactured by Mitsubishi Chemical Corporation) in a mixing device (super A sonic homogenizer (manufactured by Nippon Alex) was used to mix while applying a shearing force.
  • a curing agent modified alicyclic amine, manufactured by Mitsubishi Chemical Corporation
  • the semiconductive tape 1 was produced by applying it to a polyester cloth, which is a fibrous insulating base material, and heating and drying it.
  • Epoxy resin bisphenol A type epoxy resin, manufactured by Mitsubishi Chemical Corporation
  • carbon black manufactured by Denka Corporation
  • a curing agent modified alicyclic amine, manufactured by Mitsubishi Chemical Corporation
  • Table 1 shows the formulations used in the semiconductive tapes of Examples 1-7 and Comparative Examples 1-3.
  • a discharge test was performed using the evaluation device 10 shown in FIG.
  • a semiconductive tape 1 was placed between the ground electrode 11a and the ground electrode 11b of the evaluation device 10, and the surface resistance value between AB before the start of discharge was measured.
  • a gap of 1 mm was provided from the surface of the semiconductive tape 1, and the electrode 12 was fixed via the insulator 13.
  • a voltage of 5.0 kV was applied between the ground electrodes 11 a and 11 b and the electrode 12 to generate a partial discharge D in the gap between the semiconductive tape 1 and the electrode 12 .
  • the surface resistance between A and B was measured.
  • the semiconductive tapes of Comparative Examples 1 to 3 were also subjected to discharge tests, and the surface resistance values between AB were measured.
  • Table 2 shows the surface resistance values between AB of the semiconductive tapes of Examples 1 to 7 and Comparative Examples 1 to 3 before and after the discharge test.
  • the semiconductive tapes 1 of Examples 1 to 7 had lower surface resistance values due to partial discharge than the semiconductive tapes of Comparative Examples 1 and 3. rise is restrained.
  • the metal particles were melted and connected in the heating and drying process, and the surface resistance value between A and B fell below the proper range.
  • the surface resistance of the semiconductive tape is low, and eddy currents may be generated in the semiconductive layer during actual operation, which is not preferable.
  • Example 1 metal particles having a melting point of 200° C. are dispersed in epoxy resin.
  • Comparative Example 1 the epoxy resin was filled with carbon black as conductive particles instead of metal particles.
  • the surface resistance values after discharge in Table 2 in Example 1, the metal particles dispersed in the epoxy resin were melted by a local temperature rise due to partial discharge, and the corona resistance was developed, and the epoxy resin is suppressed, the rise in the surface resistance value is small.
  • Comparative Example 1 since the carbon black and the thermosetting resin are consumed by the oxidation action of ozone generated by discharge, the surface resistance increases and the properties as a semiconductive tape are lost.
  • Example 1 Compare Example 1 and Comparative Example 2.
  • the resistance value of Example 1 is reduced. The rise is kept small.
  • the metal particles dispersed in the epoxy resin are melted by a local temperature rise due to partial discharge, exhibiting corona resistance, and suppressing consumption of the epoxy resin, so that the increase in resistance value is small.
  • the melting point of the metal particles of Pb5-Sn95 is 190°C, which is within the range of the heating and drying temperature (100 to 190°C) in the semiconductive tape manufacturing process.
  • the surface resistance value fell below the appropriate range.
  • Desired electrical characteristics of the stator coil cannot be obtained due to the possibility of eddy currents being generated in the semi-conductive layers during actual operation.
  • the metal particles are not foreign matter in the electrical insulating varnish during the impregnation process. As a result, the desired electrical insulation properties of the stator coil cannot be obtained.
  • Example 4 and Comparative Example 3 are compared.
  • Sn—Cu metal particles are filled in an epoxy resin, which is a thermosetting resin.
  • the increase in the surface resistance value was kept small, but in Comparative Example 3, the surface resistance value increased greatly.
  • Sn25-Cu75 metal particles with a melting point of 700° C. are dispersed in the epoxy resin. Since consumption of the resin is suppressed, an increase in the surface resistance value is small.
  • the metal particles of Sn20-Cu80 which have a melting point of 710° C., do not melt when the temperature rises due to partial discharge. Since it is consumed by action, the surface resistance value increases and the characteristics as a semiconductive tape are lost.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Insulation, Fastening Of Motor, Generator Windings (AREA)
PCT/JP2021/011847 2021-03-23 2021-03-23 半導電性部材、固定子コイルおよび回転電機 Ceased WO2022201279A1 (ja)

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Application Number Priority Date Filing Date Title
PCT/JP2021/011847 WO2022201279A1 (ja) 2021-03-23 2021-03-23 半導電性部材、固定子コイルおよび回転電機
US18/276,656 US12470103B2 (en) 2021-03-23 2021-03-23 Semiconductive member, stator coil, and rotating electric machine
CN202180095900.7A CN116982240A (zh) 2021-03-23 2021-03-23 半导电性构件、定子线圈和旋转电机
JP2023508196A JP7536178B2 (ja) 2021-03-23 2021-03-23 半導電性部材、固定子コイルおよび回転電機

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