WO2022196072A1 - 基板処理方法、および、基板処理装置 - Google Patents
基板処理方法、および、基板処理装置 Download PDFInfo
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- WO2022196072A1 WO2022196072A1 PCT/JP2022/001446 JP2022001446W WO2022196072A1 WO 2022196072 A1 WO2022196072 A1 WO 2022196072A1 JP 2022001446 W JP2022001446 W JP 2022001446W WO 2022196072 A1 WO2022196072 A1 WO 2022196072A1
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- substrate
- etchant
- liquid
- main surface
- recess
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Images
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- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
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Definitions
- the present invention relates to a substrate processing method for processing a substrate and a substrate processing apparatus for processing a substrate.
- Substrates to be processed include, for example, semiconductor wafers, FPD (Flat Panel Display) substrates such as liquid crystal display devices and organic EL (Electroluminescence) display devices, optical disk substrates, magnetic disk substrates, and magneto-optical disk substrates. , photomask substrates, ceramic substrates, solar cell substrates, and the like.
- FPD Full Panel Display
- organic EL Electrode
- Photomask substrates ceramic substrates, solar cell substrates, and the like.
- Patent Literature 1 discloses a technique for making the surface of a concave portion hydrophilic in order to promote the entry of an etchant into a concave portion with a narrow opening.
- Patent Document 1 The movement of the etchant is restricted in narrow spaces. Therefore, in Patent Document 1, there is a possibility that the etchant that has entered the concave portion with a narrow opening cannot be sufficiently removed from the concave portion.
- one object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of suppressing the etchant from remaining in recesses in a structure for etching a layer to be removed in recesses formed on the main surface of a substrate. to provide.
- An embodiment of the present invention provides a substrate processing method for processing a substrate having a main surface including a recess forming surface forming a recess and having a layer to be removed formed in the recess.
- the substrate processing method includes an etching step of supplying an etchant containing etching ions to the main surface of the substrate to etch the layer to be removed, and a concentration step of concentrating the etchant on the main surface of the substrate. a hydrophilization step of hydrophilizing the concave portion forming surface exposed by the concentration of the etching solution; An ion diffusion step for diffusing in a liquid and a rinse solution removal step for removing the rinse solution from the main surface of the substrate are included.
- the etchant is concentrated after the layer to be removed such as the metal layer is removed by the etchant. Therefore, while the etchant remains in the concave portion, the concave portion forming surface is exposed. Therefore, the surface on which the recesses are formed can be favorably hydrophilized by the subsequent hydrophilization step.
- the rinse liquid Since the rinse liquid is supplied to the main surface of the substrate after the recess formation surface is made hydrophilic, the rinse liquid easily enters the recesses. A difference in ion concentration (ion concentration gradient) occurs because the rinsing liquid that has entered the recesses comes into contact with the concentrated etching liquid. Specifically, the etchant in which the concentration of etching ions is increased by concentration and the rinsing liquid containing no etching ions are brought into contact with each other. Therefore, the etching ions diffuse into the rinse liquid in order to uniformize the concentration of the etching ions. As a result, the etching ions move out of the recess, and the etchant can be suppressed from remaining in the recess. After that, the etching ions can be removed from the main surface of the substrate by removing the rinse liquid from the main surface of the substrate. Therefore, it is possible to prevent etching ions from remaining in the concave portions due to concentration of the rinse liquid.
- the width of the recess is 5 nm or less. If so, the movement of the rinse liquid into the recess is likely to be restricted. Therefore, if the concave portion forming surface is made hydrophilic after the etchant is concentrated, it is possible to promote the entry of the rinse liquid into the concave portions.
- the ion diffusion step and the rinse solution removal step are repeated at least once after the rinse solution removal step. According to this method, even if the etching ions remaining in the concave portion cannot be sufficiently removed by a single diffusion with the rinse liquid, the etching remaining in the concave portion can be removed by performing the diffusion with the rinse liquid a plurality of times. Ions can be sufficiently removed.
- the hydrophilization step includes an oxidation step of oxidizing the recess formation surface.
- the oxidation step includes a liquid oxidant supplying step of supplying a liquid oxidant to the main surface of the substrate.
- a liquid oxidizing agent ie, a liquid. Therefore, it is not necessary to move the substrate to another chamber for hydrophilization, unlike the case where the depression formation surface is hydrophilized by supplying a gaseous oxidizing agent or by irradiating with ultraviolet rays. Therefore, substrate processing can be performed quickly.
- the substrate processing method further includes an oxidant removal step of removing the liquid oxidant supplied to the main surface of the substrate from the main surface of the substrate before the ion diffusion step. .
- the liquid oxidizing agent is removed from the main surface of the substrate before the rinse liquid is supplied to the main surface of the substrate. Therefore, it is possible to suppress an increase in ion concentration in the rinse liquid due to contamination of the rinse liquid supplied to the main surface of the substrate with the oxidizing agent. Therefore, it is possible to suppress the decrease in the ion concentration gradient caused by the contact between the concentrated etching liquid and the rinse liquid. As a result, it is possible to suppress the etchant from remaining in the recess.
- the oxidation step includes a dry oxidation step of at least one of supplying a gaseous oxidizing agent to the main surface of the substrate and irradiating the main surface of the substrate with light.
- the concave portion forming surface can be made hydrophilic without using a liquid. Therefore, it is possible to prevent the ion concentration in the rinse liquid from increasing due to the liquid used for hydrophilizing the substrate being mixed into the rinse liquid.
- the concentrating step includes a drying step of drying the main surface of the substrate.
- the etching step includes supplying the etching liquid to the main surface of the substrate by discharging the etching liquid from an etching liquid nozzle toward the main surface of the substrate held by the substrate holding member. and an etchant supply step.
- the substrate is rotated by rotating the substrate holding member about a rotation axis that passes through the center of the main surface of the substrate and is orthogonal to the main surface of the substrate. and a rotary evaporation step for evaporating the solvent component contained in from the main surface of the substrate.
- Both the supply of the etchant to the main surface of the substrate and the evaporation of the solvent component of the etchant from the main surface of the substrate are performed while the substrate is held by the substrate holding member. Therefore, the etchant can be quickly concentrated after the etching is completed.
- the drying step includes a vacuum evaporation step of evaporating the solvent component contained in the etching liquid from the main surface of the substrate by reducing the pressure of the space in contact with the main surface of the substrate.
- the etchant can be rapidly concentrated by reducing the pressure in the space in contact with the main surface of the substrate.
- the substrate processing apparatus includes an etchant supply member that supplies an etchant that contains etching ions and that etches the layer to be removed to the main surface of the substrate, and an etchant that concentrates the etchant on the main surface of the substrate.
- FIG. 1A is a schematic cross-sectional view for explaining the structure of the surface layer of the device surface of the substrate to be processed.
- FIG. 1B is a view from arrow IB shown in FIG. 1A.
- FIG. 2A is a plan view for explaining the configuration of the substrate processing apparatus according to the first embodiment of the invention.
- FIG. 2B is an elevation view for explaining the configuration of the substrate processing apparatus.
- FIG. 3 is a cross-sectional view for explaining a configuration example of a wet processing unit provided in the substrate processing apparatus.
- FIG. 4 is a block diagram for explaining a configuration example related to control of the substrate processing apparatus.
- FIG. 5 is a flowchart for explaining an example of substrate processing performed by the substrate processing apparatus.
- FIG. 5 is a flowchart for explaining an example of substrate processing performed by the substrate processing apparatus.
- FIG. 6A is a schematic diagram for explaining the state of the substrate during the substrate processing.
- FIG. 6B is a schematic diagram for explaining the state of the substrate during the substrate processing.
- FIG. 6C is a schematic diagram for explaining the state of the substrate during the substrate processing.
- FIG. 6D is a schematic diagram for explaining the state of the substrate during the substrate processing.
- FIG. 7 is a schematic diagram for explaining the state of the vicinity of the upper surface of the substrate during the substrate processing.
- FIG. 8 is a flowchart for explaining another example of the substrate processing.
- FIG. 9 is a plan view for explaining the configuration of a substrate processing apparatus according to the second embodiment of the invention.
- FIG. 10 is a schematic cross-sectional view for explaining a gas oxidation processing unit provided in the substrate processing apparatus according to the second embodiment.
- FIG. 11 is a flowchart for explaining an example of substrate processing performed by the substrate processing apparatus according to the second embodiment.
- FIG. 12 is a schematic diagram for explaining the state of the vicinity of the upper surface of the substrate during substrate processing according to the second embodiment.
- FIG. 13 is a schematic cross-sectional view for explaining a configuration example of a light irradiation processing unit provided in the substrate processing apparatus according to the second embodiment.
- FIG. 14 is a flowchart for explaining another example of substrate processing performed by the substrate processing apparatus according to the second embodiment.
- FIG. 1A is a schematic cross-sectional view for explaining the structure of the surface layer portion of the device surface of the substrate W to be processed.
- FIG. 1B is a view from arrow IB shown in FIG. 1A.
- the substrate W is a substrate such as a silicon wafer and has a pair of main surfaces. At least one of the pair of main surfaces is the device surface on which the concave-convex pattern is formed. One of the pair of main surfaces may be a non-device surface on which no concave-convex pattern is formed. It is possible.
- Structure 102 may be, for example, a silicon oxide ( SiO2 ) layer, an insulating layer such as silicon nitride (SiN), a semiconductor layer such as polysilicon, or a combination thereof.
- Metal layer 103 is, for example, titanium nitride.
- the metal layer 103 is an example of the layer to be removed, but the layer to be removed is not limited to the metal layer.
- the structure 102 has a plurality of recess forming surfaces 104 forming a plurality of recesses 100 respectively.
- the recess forming surface 104 constitutes a part of the main surface of the substrate W. As shown in FIG.
- the recess forming surface 104 has a bottom surface 104 a that forms the bottom of the recess 100 and side surfaces 104 b that form the opening of the recess 100 .
- the recess 100 has, for example, a rectangular shape when viewed from the depth direction D of the recess 100, the width W1 of the short side of the recess 100 is 1 nm or more and 5 nm or less, and the width W2 of the long side of the recess 100 is 10 nm. 50 nm or less.
- the recess 100 may be circular when viewed in the depth direction D.
- the diameter (width) of the concave portion 100 is 1 nm or more and 5 nm or less.
- FIG. 2A is a plan view for explaining the configuration of the substrate processing apparatus 1 according to the first embodiment of the invention.
- FIG. 2B is an elevation view for explaining the configuration of the substrate processing apparatus 1.
- the substrate processing apparatus 1 is a single-wafer type apparatus that processes substrates W one by one.
- the substrate W has a disk shape.
- the substrate W is processed with the device surface on which the structure 102 is formed on the surface layer facing upward.
- the substrate processing apparatus 1 includes a plurality of processing units 2 for processing substrates W, a load port LP on which a carrier CA accommodating a plurality of substrates W to be processed by the processing units 2 is mounted, the load port LP and processing. It includes transport robots IR and CR that transport substrates W between units 2 and controller 3 that controls substrate processing apparatus 1 .
- the transport robot IR transports the substrate W between the carrier CA and the transport robot CR.
- the transport robot CR transports the substrate W between the transport robot IR and the processing unit 2 .
- Each of the transport robots IR and CR is articulated including a pair of multi-joint arms AR and a pair of hands H provided at the tips of the pair of multi-joint arms AR so as to be spaced apart from each other in the vertical direction. Arm robot.
- the plurality of processing units 2 form four processing towers that are respectively arranged at four horizontally separated positions.
- Each processing tower includes a plurality (three in this embodiment) of processing units 2 stacked vertically (see FIG. 2B).
- the four processing towers are arranged two by two on each side of the transport path TR extending from the load port LP toward the transport robots IR and CR (see FIG. 2A).
- the processing unit 2 is a wet processing unit 2W that processes the substrate W with liquid.
- Each wet processing unit 2W includes a chamber 4 and a processing cup 7 disposed within the chamber 4, and processes the substrate W within the processing cup 7. As shown in FIG.
- the chamber 4 is formed with an entrance (not shown) for loading and unloading the substrate W by the transport robot CR.
- the chamber 4 is provided with a shutter unit (not shown) that opens and closes this entrance.
- FIG. 3 is a schematic cross-sectional view for explaining a configuration example of the wet processing unit 2W.
- the wet processing unit 2W includes a spin chuck 5 that rotates the substrate W around a rotation axis A1 (vertical axis) while holding the substrate W at a predetermined first holding position, and the substrate W held by the spin chuck 5. It further comprises a facing member 6 facing from above.
- the rotation axis A1 passes through the center of the substrate W and is perpendicular to the main surface of the substrate W. As shown in FIG. That is, the rotation axis A1 extends vertically.
- the first holding position is the position of the substrate W shown in FIG. 3, and is the position where the substrate W is held in a horizontal posture.
- the spin chuck 5 includes a spin base 21 having a disk shape along the horizontal direction, a plurality of chuck pins 20 for gripping the substrate W above the spin base 21 and holding the substrate W at a first holding position, and the spin base 21. and a rotary drive member 23 for rotating the rotary shaft 22 around its central axis (rotational axis A1).
- the spin chuck 5 is an example of a substrate holding member.
- a plurality of chuck pins 20 are arranged on the upper surface of the spin base 21 at intervals in the circumferential direction of the spin base 21 .
- the rotary drive member 23 is, for example, an actuator such as an electric motor.
- the rotation drive member 23 rotates the rotation shaft 22 to rotate the spin base 21 and the plurality of chuck pins 20 around the rotation axis A1. Thereby, the substrate W is rotated around the rotation axis A1 together with the spin base 21 and the plurality of chuck pins 20 .
- the plurality of chuck pins 20 are movable between a closed position in which they are in contact with the peripheral edge of the substrate W to grip the substrate W and an open position in which they are retracted from the peripheral edge of the substrate W.
- the multiple chuck pins 20 are moved by an opening/closing mechanism (not shown).
- the opening/closing mechanism includes, for example, a link mechanism and an actuator that applies a driving force to the link mechanism.
- the facing member 6 is a plate-shaped member that isolates the atmosphere in the space between the upper surface of the substrate W held by the spin chuck 5 and the atmosphere outside the space. Therefore, the facing member 6 is also called a blocking plate.
- the facing member 6 has a facing surface 6a that faces the upper surface of the substrate W held by the spin chuck 5 from above.
- the opposing member 6 is formed in a disc shape having a diameter substantially equal to or larger than that of the substrate W. As shown in FIG. A support shaft 33 is fixed to the opposing member 6 on the side opposite to the opposing surface 6a.
- the facing member 6 is connected to a facing member elevating mechanism 34 that raises and lowers the facing member 6 .
- the opposing member elevating mechanism 34 may have, for example, an electric motor or an air cylinder that drives the support shaft 33 up and down, or may have an actuator other than these.
- the opposing member 6 may be rotatable around the rotation axis A1.
- the processing cup 7 receives liquid splashed from the substrate W held by the spin chuck 5 .
- the processing cup 7 has a plurality of guards 30 (two in the example of FIG. 3) for receiving the liquid splashing outward from the substrate W held by the spin chuck 5, and the liquid guided downward by the plurality of guards 30. It includes a plurality (two in the example of FIG. 3) of cups 31 for receiving and a cylindrical outer wall member 32 surrounding the plurality of guards 30 and the plurality of cups 31 .
- the plurality of guards 30 are individually raised and lowered by a guard elevation drive mechanism (not shown).
- the guard lifting drive mechanism may have, for example, an electric motor or an air cylinder for driving the guards 30 up and down, or may have actuators other than these.
- the wet processing unit 2W includes an etchant nozzle 10 that supplies an etchant to the upper surface (upper main surface) of the substrate W held by the spin chuck 5, and a liquid oxidizing agent that is applied to the upper surface of the substrate W held by the spin chuck 5. and a rinse liquid nozzle 12 that supplies a rinse liquid to the upper surface of the substrate W held by the spin chuck 5 .
- the etchant is, for example, hydrofluoric acid or an APM liquid (ammonia-hydrogen peroxide solution mixture), which is a liquid that contains etching ions and etches the metal layer 103 .
- the etching ion is, for example, HF 2 ⁇ , NH 4 + or the like, and is a component for oxidizing and removing the metal layer 103 .
- the etchant is hydrofluoric acid
- the etching ions are HF 2 -
- the etchant is an APM liquid
- the etching ions are NH 4 + .
- a solvent component contained in the etching solution is, for example, water.
- the etchant may contain a migration promoter such as ammonium chloride that promotes the migration of etching ions within the recess 100 .
- a liquid oxidizing agent is an example of a hydrophilizing liquid that hydrophilizes the main surface of the substrate W.
- the liquid oxidizing agent is, for example, a liquid oxidizing agent that oxidizes the main surface of the substrate W to make the main surface of the substrate W hydrophilic.
- the liquid oxidant is, for example, APM liquid, hydrogen peroxide water, ozone water, or a mixture thereof.
- the liquid oxidizing agent contains hydrogen peroxide, ozone, or the like as an oxidizing agent.
- the rinse liquid is mainly composed of the same component as the solvent component (for example, water) of the etching liquid.
- the rinsing liquid is, for example, deionized water (DIW), carbonated water, electrolyzed ion water, hydrochloric acid water with a dilution concentration (for example, 1 ppm or more and 100 ppm or less), or a dilution concentration (for example, 1 ppm or more and 100 ppm). below) containing at least one of ammonia water and reduced water (hydrogen water). It is particularly preferable that the rinse liquid does not contain an electrolyte, and it is particularly preferable to use DIW as the rinse liquid.
- Both the etchant nozzle 10 and the liquid oxidant nozzle 11 are mobile nozzles that can move at least in the horizontal direction.
- the etchant nozzle 10 and the liquid oxidant nozzle 11 are horizontally moved by a plurality of nozzle moving mechanisms (first nozzle moving mechanism 35 and second nozzle moving mechanism 36).
- Each nozzle moving mechanism includes an arm (not shown) that supports the corresponding nozzle and an arm moving mechanism (not shown) that horizontally moves the corresponding arm.
- Each arm moving mechanism may have an electric motor or an air cylinder, or may have an actuator other than these.
- the etchant nozzle 10 and the liquid oxidant nozzle 11 may be configured to move integrally by a common nozzle moving mechanism.
- the etchant nozzle 10 and the liquid oxidant nozzle 11 may be configured to be movable in the vertical direction as well.
- the rinse liquid nozzle 12 is a fixed nozzle whose horizontal and vertical positions are fixed, but it may be a movable nozzle, similar to the etchant nozzle 10 and liquid oxidant nozzle 11 .
- the etchant nozzle 10 is connected to one end of an etchant pipe 40 that guides the etchant to the etchant nozzle 10 .
- the other end of the etchant pipe 40 is connected to an etchant tank (not shown).
- the etchant pipe 40 is provided with an etchant valve 50A for opening and closing a channel in the etchant pipe 40, and an etchant flow control valve 50B for adjusting the flow rate of the etchant in the channel.
- the etchant valve 50A When the etchant valve 50A is opened, the etchant is continuously discharged downward from the outlet of the etchant nozzle 10 at a flow rate corresponding to the degree of opening of the etchant flow control valve 50B.
- the etchant nozzle 10 is an example of an etchant supply member.
- the liquid oxidant nozzle 11 is connected to one end of a liquid oxidant pipe 41 that guides the liquid oxidant to the liquid oxidant nozzle 11 .
- the other end of the liquid oxidant pipe 41 is connected to a liquid oxidant tank (not shown).
- the liquid oxidant pipe 41 is provided with a liquid oxidant valve 51A that opens and closes a flow channel in the liquid oxidant pipe 41, and a liquid oxidant flow rate adjustment valve 51B that adjusts the flow rate of the liquid oxidant in the flow channel. is dressed.
- liquid oxidant valve 51A When the liquid oxidant valve 51A is opened, the liquid oxidant is continuously discharged downward from the outlet of the liquid oxidant nozzle 11 at a flow rate corresponding to the degree of opening of the liquid oxidant flow control valve 51B.
- the liquid oxidant nozzle 11 is an example of a liquid oxidant supply member.
- the rinse liquid nozzle 12 is connected to one end of a rinse liquid pipe 42 that guides the rinse liquid to the rinse liquid nozzle 12 .
- the other end of the rinse liquid pipe 42 is connected to a rinse liquid tank (not shown).
- the rinse liquid pipe 42 is provided with a rinse liquid valve 52A that opens and closes the flow path in the rinse liquid pipe 42, and a rinse liquid flow rate adjustment valve 52B that adjusts the flow rate of the rinse liquid in the flow path.
- the rinse liquid valve 52A When the rinse liquid valve 52A is opened, the rinse liquid is discharged in a continuous flow from the discharge port of the rinse liquid nozzle 12 at a flow rate corresponding to the degree of opening of the rinse liquid flow control valve 52B.
- the rinse liquid nozzle 12 is an example of a rinse liquid supply member.
- FIG. 4 is a block diagram for explaining a configuration example related to control of the substrate processing apparatus 1. As shown in FIG. 4
- the controller 3 is equipped with a microcomputer, and controls objects provided in the substrate processing apparatus 1 according to a predetermined program. More specifically, the controller 3 includes a processor (CPU) 3A and a memory 3B in which programs are stored. The processor 3A executes programs to perform various control processes for substrate processing. is configured as
- the controller 3 is programmed to control the members (valves, motors, etc.) that make up the wet processing unit 2W, the transfer robots IR, CR, and the like.
- the controller 3 similarly controls members (valves, motors, power sources, etc.) that constitute the dry processing unit 2D, which will be described later.
- controller 3 By controlling the valves by the controller 3, the presence or absence of ejection of fluid from the corresponding nozzles and the ejection flow rate of the fluid from the corresponding nozzles are controlled. Each of the following steps is executed by the controller 3 controlling these configurations. In other words, controller 3 is programmed to perform the following steps.
- FIG. 5 is a flowchart for explaining an example of substrate processing performed by the substrate processing apparatus 1. As shown in FIG. FIG. 5 mainly shows processing realized by the controller 3 executing the program. 6A to 6D are schematic diagrams for explaining each step of substrate processing performed by the substrate processing apparatus 1. FIG.
- an oxidant removal step (step S5), a rinse solution supply step (step S6), a rinse solution removal step (step S7), and a substrate unloading step (step S8) are executed in this order.
- FIG. 6A to 6D The substrate processing performed by the substrate processing apparatus 1 will be described below mainly with reference to FIGS. 3 and 5.
- the unprocessed substrate W is loaded from the carrier CA into the wet processing unit 2W by the transport robots IR and CR (see FIG. 2A) and transferred to the spin chuck 5 (substrate loading step: step S1). Thereby, the substrate W is horizontally held by the spin chuck 5 (substrate holding step). The holding of the substrate W by the spin chuck 5 is continued until the rinse solution removing step (step S7) is completed.
- the facing member 6 is arranged at a separated position (the position of the facing member 6 shown in FIG. 3) where the nozzle can pass between the substrate W and the facing member 6. .
- the rotation driving member 23 starts rotating the substrate W (substrate rotating step).
- step S2 the etchant supply step (step S2) of supplying the etchant to the upper surface of the substrate W is performed.
- the first nozzle moving mechanism 35 moves the etchant nozzle 10 to the processing position, and the etchant valve 50A is opened with the etchant nozzle 10 positioned at the processing position.
- the etching liquid is discharged from the etching liquid nozzle 10 toward the upper surface of the substrate W (etching liquid discharge step).
- the etchant discharged from the etchant nozzle 10 lands on the upper surface of the substrate W.
- the etchant spreads over the entire upper surface of the substrate W due to the action of centrifugal force, and is supplied to the entire upper surface of the substrate W (etchant supply step).
- the processing position of the etchant nozzle 10 is the central position where the discharge port of the etchant nozzle 10 faces the central region of the upper surface of the substrate W. Therefore, the etchant lands on the central region of the upper surface of the substrate W. As shown in FIG. Unlike this substrate processing, the etchant nozzle 10 may move horizontally along the upper surface of the substrate W to eject the etchant.
- the etchant discharge is continued at a predetermined discharge flow rate for a predetermined etchant discharge period.
- the etchant discharge period is, for example, 5 seconds or more and 180 seconds or less.
- the discharge flow rate of the etchant is, for example, 500 mL/min or more and 2000 mL/min or less.
- the substrate W is rotated, for example, at a rotation speed of 300 rpm or more and 1200 rpm or less.
- the etchant removal step (step S3) of removing the etchant from the upper surface of the substrate W is performed.
- the etchant valve 50A is closed to stop the ejection of the etchant, and the rotation driving member 23 accelerates the rotation of the substrate W to rotate the substrate W at high speed.
- the substrate W is rotated at a rotation speed of, for example, 1500 rpm or more and 2500 rpm or less for a period of 60 seconds or more and 180 seconds or less.
- the etchant is shaken off from the upper surface of the substrate W and most of the etchant is discharged outside the substrate W, and the solvent component in the etchant is evaporated from the upper surface of the substrate W.
- First rotary discharge step, first rotary evaporation step As a result, the etchant is removed from the upper surface of the substrate W, and the upper surface of the substrate W is dried (first drying step).
- the etchant is not completely removed from the upper surface of the substrate W, and remains in the concave portion 100 until the rinse liquid removing step (step S7) described later is completed.
- the centrifugal force during high-speed rotation of the substrate W acts not only on the liquid on the upper surface of the substrate W, but also on the atmosphere in contact with the upper surface of the substrate W.
- FIG. 6B due to the action of the centrifugal force of the substrate W, an airflow F directed from the center side to the peripheral side of the upper surface of the substrate W is formed in the space SP1 in contact with the etchant on the substrate W.
- This gas flow F removes from the substrate W the gaseous solvent that is in contact with the etchant on the substrate W.
- the evaporation of the solvent component in the etchant is accelerated (first rotary evaporation step).
- the opposing member 6 is placed at the decompression position closer to the upper surface of the substrate W than at the spaced position.
- the space SP1 between the opposing member 6 and the substrate W can be decompressed by rotating the substrate W at high speed to form the airflow F while the opposing member 6 is positioned at the depressurized position.
- the evaporation of the solvent component in the etching liquid can be accelerated (first reduced-pressure evaporation step).
- the etchant nozzle 10 is moved to the retracted position by the first nozzle moving mechanism 35 .
- the retracted position of the etchant nozzle 10 is a position that does not face the upper surface of the substrate W and is located outside the processing cup 7 in plan view.
- step S4 the liquid oxidant supply process (step S4) of supplying the liquid oxidant to the upper surface of the substrate W is performed.
- the opposing member elevating mechanism 34 arranges the opposing member 6 at the separated position.
- the second nozzle moving mechanism 36 moves the liquid oxidant nozzle 11 to the processing position while the opposing member 6 is positioned at the separated position.
- the liquid oxidant valve 51A is opened while the liquid oxidant nozzle 11 is positioned at the processing position.
- FIG. 6C the liquid oxidant is discharged from the liquid oxidant nozzle 11 toward the upper surface of the substrate W (liquid oxidant discharge step).
- the liquid oxidant discharged from the liquid oxidant nozzle 11 lands on the upper surface of the substrate W.
- the liquid oxidant spreads over the entire upper surface of the substrate W due to the action of centrifugal force, and is supplied to the entire upper surface of the substrate W (liquid oxidant supply step).
- the processing position of the liquid oxidizing agent nozzle 11 is the central position where the discharge port faces the central region of the upper surface of the substrate W. Therefore, the liquid oxidizing agent lands on the central region of the upper surface of the substrate W. As shown in FIG. Unlike this substrate processing, the liquid oxidant nozzle 11 may move horizontally along the upper surface of the substrate W to discharge the liquid oxidant.
- the ejection of the liquid oxidant is continued at a predetermined ejection flow rate for a predetermined liquid oxidant ejection period.
- the liquid oxidant ejection period is, for example, 5 seconds or more and 180 seconds or less.
- the discharge flow rate of the liquid oxidant is, for example, 500 mL/min or more and 2000 mL/min or less.
- the substrate W is rotated at a rotational speed of, for example, 300 rpm or more and 1200 rpm or less.
- the oxidant removal step (step S5) of removing the liquid oxidant from the upper surface of the substrate W is performed.
- the liquid oxidant valve 51A is closed to stop the discharge of the liquid oxidant, and the rotation drive member 23 accelerates the rotation of the substrate W to rotate the substrate W at high speed.
- the substrate W is rotated at a rotational speed of 1500 rpm to 2500 rpm for a period of 60 seconds to 180 seconds, for example.
- the liquid oxidant is shaken off from the upper surface of the substrate W, most of the liquid oxidant is discharged outside the substrate W, and the liquid oxidant is evaporated from the upper surface of the substrate W.
- second rotary discharge step, second rotary evaporation step As a result, the liquid oxidizing agent is removed from the upper surface of the substrate W, and the upper surface of the substrate W is dried (second drying step).
- the facing member 6 may be arranged at the reduced pressure position (second reduced pressure evaporation step).
- the liquid oxidant nozzle 11 is moved to the retracted position by the second nozzle moving mechanism 36 .
- the retracted position of the liquid oxidant nozzle 11 is a position that does not face the upper surface of the substrate W and is located outside the processing cup 7 in plan view.
- the rinse liquid supply step (step S6) of supplying the rinse liquid to the upper surface of the substrate W is performed.
- the opposing member elevating mechanism 34 arranges the opposing member 6 at the separated position.
- the rinse liquid valve 52A is opened while the opposing member 6 is positioned at the separated position.
- the rinse liquid is discharged from the rinse liquid nozzle 12 toward the upper surface of the substrate W (rinse liquid discharge step).
- the rinse liquid discharged from the rinse liquid nozzle 12 lands on the upper surface of the substrate W.
- the rinse liquid spreads over the entire upper surface of the substrate W due to the action of centrifugal force, and is supplied to the entire upper surface of the substrate W (rinse liquid supply step).
- the rinse liquid is discharged at a predetermined discharge flow rate and continued for a predetermined rinse liquid discharge period.
- the liquid oxidant ejection period is, for example, 10 seconds or more and 180 seconds or less.
- the discharge flow rate of the rinse liquid is, for example, 500 mL/min or more and 2000 mL/min or less.
- the substrate W is rotated at a rotational speed of, for example, 300 rpm or more and 1200 rpm or less.
- the rinse solution removal step (step S7) of removing the rinse solution from the upper surface of the substrate W is performed.
- the rinse liquid valve 52A is closed to stop the discharge of the rinse liquid, and the rotation drive member 23 accelerates the rotation of the substrate W to rotate the substrate W at high speed.
- the substrate W rotates at a rotation speed of 1500 rpm to 2500 rpm for a period of 60 seconds to 180 seconds, for example.
- the rinse liquid is shaken off from the upper surface of the substrate W and most of the rinse liquid is discharged outside the substrate W, and the solvent component in the rinse liquid is evaporated from the upper surface of the substrate W.
- hird rotary discharge step, third rotary evaporation step As a result, the rinse liquid is removed from the upper surface of the substrate W, and the upper surface of the substrate W is dried (third drying step).
- the vaporization of the rinse liquid is promoted by the airflow F formed by the action of the centrifugal force when the substrate W rotates at high speed.
- the opposing member 6 may be placed at the reduced pressure position (third reduced pressure evaporation process).
- the opposing member elevating mechanism 34 moves the opposing member 6 to the separated position, and the rotation driving member 23 stops the substrate W from rotating.
- the transport robot CR enters the wet processing unit 2W, receives the processed substrate W from the spin chuck 5, and carries it out of the wet processing unit 2W (substrate unloading step: step S8).
- the substrate W is transferred from the transport robot CR to the transport robot IR and stored in the carrier CA by the transport robot IR.
- FIG. 7 is a schematic diagram for explaining the state of the vicinity of the upper surface of the substrate W during substrate processing.
- step S2 By supplying an etchant to the upper surface of the substrate W in the etchant supply step (step S2), the metal layer 103 in the recess 100 is removed (etching step), as shown in FIG. 7(a). At the end of the etchant supply step, it is preferable that the metal layer 103 in the recess 100 is completely removed as shown in FIG. 7(b).
- step S3 the etchant 110 is discharged outside the substrate W, and the solvent component in the etchant 110 is evaporated. Therefore, the etchant is concentrated, and as shown in FIG. 7C, the concentrated etchant 110 remains in the recess 100 (concentration step).
- the recess 100 is very narrow. Therefore, the concentration of the etching ions 111 in the etching solution 110 increases due to the evaporation of the solvent component, and the vapor pressure of the solvent decreases. In addition, the vapor pressure of the solvent is lowered in narrow places such as the recess 100 . Therefore, even after the etchant removing step, the etchant 110 tends to remain at the bottom of the recess 100 without being completely removed.
- the etchant 110 By evaporation of the solvent component, the etchant 110 remains in the recess 100, while the side surface 104b of the recess forming surface 104 is exposed. It should be noted that, unlike FIG. 7(c), a part of the bottom surface 104a of the recess forming surface 104 may be exposed.
- the liquid oxidant supply step (step S4) is performed to supply the liquid oxidant 112 onto the upper surface of the substrate W. Since the concave portion forming surface 104 is exposed by the etchant removing step, the concave portion forming surface 104 (especially the side surface 104b) can be favorably hydrophilized by allowing the liquid oxidizing agent 112 to enter the concave portion 100 ( hydrophilization step).
- the liquid oxidizing agent nozzle 11 (see FIG. 3) functions as a hydrophilizing member that hydrophilizes the recess forming surface 104 exposed by the concentration of the etchant 110 .
- the liquid oxidant 112 is removed in the oxidant removal step (step S5).
- the etching ions 111 remain in the recesses 100 even after the oxidant removal step.
- the rinse liquid 113 is supplied to the upper surface of the substrate W in the rinse liquid supply step (step S6). As a result, the rinse liquid 113 enters the concave portion 100 as shown in FIG. 7(f).
- the rinse liquid 113 can easily enter the recess 100 compared to the case where the recess 100 is entirely filled with liquid.
- the width W1 of the recess 100 is 5 nm or less, the movement of the rinse liquid 113 into the recess 100 is likely to be restricted.
- the side surface 104 b of the concave portion forming surface 104 is hydrophilized by the liquid oxidant 112 . Therefore, the rinse liquid 113 can smoothly enter the recess 100 .
- the recess 100 with a width W1 of 5 nm or less constitutes a diffusion layer dominated by ion diffusion rather than fluid movement. Since the rinse liquid 113 entering the recess 100 comes into contact with the etching liquid 110 , a difference in ion concentration (concentration gradient) occurs between the rinse liquid 113 and the etching liquid 110 in the recess 100 . Specifically, the etchant 110 having a high concentration of the etching ions 111 and the rinse liquid 113 containing no etching ions 111 are brought into contact with each other. Therefore, in order to uniformize the concentration of the etching ions 111, the etching ions 111 are diffused into the rinse liquid 113 (ion diffusion step), as shown in FIG.
- the rinse liquid 113 is supplied to the upper surface of the substrate W to perform the ion diffusion process of diffusing the etching ions 111 into the rinse liquid 113 .
- the etching ions 111 move out of the recess 100, and the amount of etching ions 111 remaining in the recess 100 is reduced.
- the rinse liquid is removed from the upper surface of the substrate W in the rinse liquid removing step (step S7).
- the etching ions 111 are diffused in the rinse liquid 113 in the rinse liquid supply step, and most of the etching ions 111 are discharged to the outside of the substrate W together with the rinse liquid 113 . Therefore, the rinse liquid 113 can be removed from the recess 100 as shown in FIG. 7(h). Furthermore, it is possible to prevent the etching ions 111 from remaining in the concave portions 100 due to the concentration of the rinse liquid 113 in the rinse liquid removing process.
- the rinse liquid 113 functions as a liquid that diffuses the etching ions 111 in the liquid by generating a concentration gradient of the etching ions 111 .
- hydrophilization of the concave portion forming surface 104 between the supply of the etchant 110 and the supply of the rinse liquid 113 is achieved by supplying the liquid oxidizing agent 112, that is, the liquid. Therefore, unlike the case where the recess forming surface 104 is hydrophilized by supplying a gaseous oxidizing agent or by irradiating light (for example, the second embodiment described later), the substrate W is placed in a separate chamber for hydrophilization. No need to move. Therefore, substrate processing can be performed quickly.
- the liquid oxidizing agent 112 is removed from the upper surface of the substrate W by evaporation before the rinse liquid 113 is supplied to the upper surface of the substrate W. Therefore, it is possible to suppress an increase in the ion concentration in the rinse liquid 113 caused by the oxidizing agent (ozone or hydrogen peroxide) in the liquid oxidizing agent 112 being mixed into the rinse liquid 113 supplied to the upper surface of the substrate W. Therefore, a decrease in the ion concentration gradient between the concentrated etching solution 110 and the rinse solution 113 can be suppressed. As a result, the etchant 110 remaining in the recess 100 can be suppressed.
- both the supply of the etchant 110 to the upper surface of the substrate W and the evaporation of the solvent component of the etchant 110 from the upper surface of the substrate W cause the spin chuck 5 to hold the substrate W. is executed as is. Therefore, the etchant 110 can be quickly concentrated after the etching is finished. Further, by rotating the spin chuck 5 at high speed while arranging the opposing member 6 at the decompression position, the etchant 110 can be rapidly concentrated by decompressing the space SP1 in contact with the upper surface of the substrate W.
- the concentration of the etchant 110 is mainly performed by rotating the substrate W by the spin chuck 5 . Therefore, the spin chuck 5 functions as an etchant concentration member. Furthermore, the removal of the rinsing liquid is also mainly performed by rotating the substrate W by the spin chuck 5 . Therefore, the spin chuck 5 also functions as a rinse liquid removing member.
- Diffusion of the etching ions 111 by the rinse liquid 113 can be regarded as infinite dilution of the etching liquid 110 .
- R D ⁇ S ⁇ (C 0 -C)/ ⁇
- the rate of dilution R due to diffusion increases as the concentration gradient increases.
- D represents the diffusion coefficient
- S represents the solid surface area.
- C 0 represents the ion concentration in the concentrated etchant 110 and “C” represents the ion concentration in the rinse liquid 113 .
- (C 0 ⁇ C)/ ⁇ ” represents the concentration gradient of the diffusion layer.
- the etchant 110 can be efficiently removed from the concave portion 100 .
- FIG. 8 is a flowchart for explaining another example of substrate processing according to the first embodiment.
- the rinse liquid supply process (step S6) and the rinse liquid supply process (step S7) are repeated at least once each.
- the rinse solution supply step (ion diffusion step) and the rinse solution removal step are alternately performed multiple times.
- the rinse liquid removing step after the rinse liquid is discharged to the outside of the substrate W, the rinse liquid is supplied again toward the upper surface of the substrate W from the rinse liquid nozzle 12 .
- N in FIG. 8 means a natural number of 1 or more.
- diffusion by the rinse liquid 113 can be performed multiple times. Therefore, even if the etching ions 111 remaining in the recesses 100 cannot be sufficiently removed by a single diffusion with the rinse liquid 113, the etching ions 111 remaining in the recesses 100 can be sufficiently removed.
- FIG. 9 is a plan view for explaining the configuration of a substrate processing apparatus 1P according to the second embodiment.
- the main difference between the substrate processing apparatus 1P according to the second embodiment and the substrate processing apparatus 1 (see FIG. 3) according to the first embodiment is that the processing unit 2 includes a wet processing unit 2W and a dry processing unit 2D. It is a point.
- the same reference numerals as those in FIG. 1 etc. are attached to the same configurations as those shown in FIGS. The same applies to FIGS. 10 to 14, which will be described later.
- the two processing towers on the transport robot IR side are composed of a plurality of wet processing units 2W, and the two processing towers on the opposite side of the transport robot IR are composed of a plurality of dry processing units 2D. It is composed by
- the configuration of the wet processing unit 2W according to the second embodiment is the same as the configuration of the wet processing unit 2W (configuration shown in FIG. 3) according to the first embodiment. Note that the liquid oxidizing agent nozzle 11 (see FIG. 3, etc.) can be omitted from the wet processing unit 2W according to the second embodiment.
- the dry processing unit 2D includes a gas oxidation processing unit 80 disposed within the chamber 4 and oxidizing the substrate W with a gaseous oxidant.
- FIG. 10 is a schematic cross-sectional view for explaining a configuration example of the gas oxidation processing unit 80.
- the gas oxidation processing unit 80 includes a heater unit 82 having a heating surface 82a on which the substrate W is placed, and a heat treatment chamber 81 housing the heater unit 82 .
- the heater unit 82 has the form of a disk-shaped hot plate.
- the heater unit 82 includes a plate body 82A and a heater 85. As shown in FIG.
- the heater unit 82 is also called a heating member.
- the upper surface of the plate body 82A constitutes the heating surface 82a.
- the heater 85 may be a resistor built in the plate body 82A.
- the heater 85 can heat the substrate W to a temperature substantially equal to the temperature of the heater 85 .
- the heater 85 is configured, for example, to heat the substrate W placed on the heating surface 82a within a temperature range of room temperature to 400°C.
- the heater 85 is connected to an energizing mechanism 86 such as a power supply, and the temperature of the heater 85 changes within the temperature range by adjusting the current supplied from the energizing mechanism 86. .
- the heat treatment chamber 81 includes a chamber body 87 that opens upward, and a lid 88 that moves up and down above the chamber body 87 and closes the opening of the chamber body 87 .
- the gas oxidation processing unit 80 includes a lid elevation driving mechanism 89 that raises and lowers the lid 88 (moves vertically).
- a space between the chamber body 87 and the lid 88 is sealed by an elastic member 90 such as an O-ring.
- the lid 88 is moved to a lower position (indicated by a solid line in FIG. 10) to block the opening of the chamber main body 87 and form a sealed processing space SP2 therein by a lid lifting drive mechanism 89, and retracted upward to open the opening. and the upper position (the position indicated by the two-dot chain line in FIG. 10).
- the closed processing space SP2 is a space in contact with the upper surface of the substrate W. As shown in FIG. When the lid 88 is positioned at the upper position, the hand H of the transfer robot CR can access the inside of the heat treatment chamber 81 .
- the substrate W is horizontally held at a predetermined second holding position by being placed on the heater unit 82 .
- the second holding position is the position of the substrate W shown in FIG. 10, and is the position where the substrate W is held in a horizontal posture.
- the lid lifting drive mechanism 89 may have an electric motor or an air cylinder, or may have an actuator other than these.
- the gas oxidation processing unit 80 further includes a plurality of lift pins 83 that pass through the plate body 82A and move up and down, and a pin elevation drive mechanism 84 that moves the plurality of lift pins 83 in the up and down direction.
- a plurality of lift pins 83 are connected by a connecting plate 91 .
- the plurality of lift pins 83 are arranged at an upper position (position indicated by a two-dot chain line in FIG. 10) supporting the substrate W above the heating surface 82a and a tip portion thereof by lifting the connection plate 91 by a pin lifting drive mechanism 84. (Upper end) is vertically moved between the lower position (the position indicated by the solid line in FIG. 10) where the heating surface 82a is immersed below the heating surface 82a.
- the pin lifting drive mechanism 84 may have an electric motor or an air cylinder, or may have an actuator other than these.
- a plurality of lift pins 83 are inserted into a plurality of through holes 92 penetrating through the heater unit 82 and the chamber main body 87 respectively. Fluid may be prevented from entering the through-holes 92 from outside the heat treatment chamber 81 by a bellows (not shown) surrounding the lift pins 83 or the like.
- the gas oxidation processing unit 80 has a plurality of gas introduction ports 94 for introducing gaseous oxidant into the sealed processing space SP2 inside the heat treatment chamber 81.
- Each gas introduction port 94 is a through hole penetrating the lid 88 .
- a gaseous oxidizing agent is an example of a hydrophilic gas that makes the main surface of the substrate W hydrophilic.
- a gaseous oxidant is, for example, ozone (O 3 ) gas.
- the gaseous oxidant is not limited to ozone gas, and may be, for example, oxidizing steam, superheated steam, or the like.
- a gaseous oxidant pipe 95 for supplying a gaseous oxidant to the gas introduction port 94 is connected to the plurality of gas introduction ports 94 .
- a gaseous oxidant pipe 95 branches off from a gaseous oxidant supply source (not shown) on its way to a plurality of gas introduction ports 94 .
- the gaseous oxidant pipe 95 is provided with a gaseous oxidant valve 96A for opening and closing the flow path thereof, and a gaseous oxidant flow control valve 96B for adjusting the flow rate of the gaseous oxidant in the gaseous oxidant pipe 95. intervened.
- the gaseous oxidizing agent valve 96A When the gaseous oxidizing agent valve 96A is opened, the gaseous oxidizing agent is introduced into the sealed processing space SP2 from the plurality of gas introduction ports 94 and supplied toward the upper surface of the substrate W.
- the multiple gas introduction ports 94 are an example of a gaseous oxidant supply member.
- the plurality of gas introduction ports 94 may be configured to supply an inert gas in addition to the gaseous oxidant (see the two-dot chain line in FIG. 10).
- an inert gas can be mixed in the gaseous oxidant introduced into the closed processing space SP2, and the concentration (partial pressure) of the oxidant can be adjusted according to the degree of mixing of the inert gas.
- the gas oxidation processing unit 80 is formed in a chamber main body 87 and has a plurality of exhaust ports 97 for exhausting the internal atmosphere of the heat treatment chamber 81 .
- a discharge pipe 98 is connected to each discharge port 97, and a discharge valve 99 is interposed in the discharge pipe 98 for opening and closing the flow path.
- FIG. 11 is a schematic diagram for explaining a state of the substrate W when an example of substrate processing is being performed by the substrate processing apparatus 1P according to the second embodiment.
- the main difference between the substrate processing according to the second embodiment and the substrate processing according to the first embodiment (see FIG. 5) is that the substrate W is made hydrophilic by the dry processing unit 2D.
- the unprocessed substrate W is loaded from the carrier CA into the wet processing unit 2W by the transport robots IR and CR (see also FIG. 9) and transferred to the spin chuck 5 (first loading step: step S10). Thereby, the substrate W is horizontally held by the spin chuck 5 (first substrate holding step). Then, as shown in FIGS. 6A and 6B, an etchant supply step (step S2) and an etchant removal step (step S3) are performed.
- the transport robot CR enters the wet processing unit 2W, receives the substrate W from the spin chuck 5, and carries it out of the wet processing unit 2W (first carry-out step: step S11).
- the substrate W unloaded from the wet processing unit 2W is loaded into the dry processing unit 2D by the transport robot CR, and passed to the plurality of lift pins 83 located at the upper position (second loading step: step S12).
- the substrate W is mounted on the heating surface 82a by the pin lifting drive mechanism 84 moving the plurality of lift pins 83 to the lower position. Thereby, the substrate W is horizontally held (second substrate holding step).
- the substrate W is placed on the heating surface 82a of the heater unit 82 within the sealed processing space SP2 formed by the chamber main body 87 and the lid 88.
- the substrate W placed on the heating surface 82a is heated to a predetermined oxidation temperature by the heater unit 82 (substrate heating process, heater heating process).
- the predetermined oxidation temperature is, for example, 100° C. or higher and 400° C. or lower.
- the gaseous oxidant valve 96A is opened while the closed processing space SP2 is formed. Thereby, a gas oxidation process is performed. Specifically, a gaseous oxidant such as ozone gas is introduced into the closed processing space SP2 from the plurality of gas introduction ports 94, and the gaseous oxidant is supplied toward the upper surface of the substrate W (gaseous oxidant supply step: step S13). As a result, the concave portion forming surface 104 (particularly, the side surface 104b) is oxidized (gas oxidation step, dry oxidation step), which will be described later in detail. That is, the concave portion forming surface 104 (particularly, the side surface 104b) is hydrophilized (hydrophilization step).
- the plurality of gas introduction ports 94 function as hydrophilizing members that hydrophilize the concave portion forming surface 104 exposed by the concentration of the etchant 110 .
- the substrate W is heated to the oxidation temperature on the heater unit 82 . Therefore, in the gaseous oxidizing agent supply step, a heating oxidation step is performed in which the gaseous oxidizing agent is supplied toward the upper surface of the substrate W while heating the substrate W to the oxidation temperature.
- the exhaust valve 99 is opened during the supply of the gaseous oxidant. Therefore, the gaseous oxidant in the closed processing space SP2 is exhausted from the exhaust pipe 98.
- the gaseous oxidant valve 96A is closed. This stops the supply of the gaseous oxidant to the closed processing space SP2. After that, the lid 88 moves to the upper position.
- the transfer robot CR After the gas oxidation process for a certain period of time, the transfer robot CR enters the dry processing unit 2D, receives the oxidized substrate W from the base 72, and carries it out of the dry processing unit 2D (second carry-out step: step S14). . Specifically, the pin elevation driving mechanism 84 moves the plurality of lift pins 83 to the upper position, and the plurality of lift pins 83 lift the substrate W from the heater unit 82 . The transport robot CR receives substrates W from a plurality of lift pins 83 .
- the substrate W unloaded from the dry processing unit 2D is loaded into the wet processing unit 2W by the transport robot CR and handed over to the spin chuck 5 (third loading step: step S15). Thereby, the substrate W is horizontally held by the spin chuck 5 (third substrate holding step). While the substrate W is held by the spin chuck 5, the rotation driving member 23 starts rotating the substrate W (substrate rotating step).
- a rinse solution supply step (step S6) and a rinse solution removal step (step S7) are performed.
- the transport robot CR enters the wet processing unit 2W, receives the substrate W from the plurality of chuck pins 20, and carries it out of the wet processing unit 2W (third carry-out step: step S16).
- the substrate W is transferred from the transport robot CR to the transport robot IR and stored in the carrier CA by the transport robot IR.
- FIG. 12 is a schematic diagram for explaining the state of the vicinity of the upper surface of the substrate W during substrate processing according to the second embodiment.
- the substrate processing according to the second embodiment uses a gaseous oxidizing agent for oxidizing the main surface of the substrate W. As shown in FIG.
- step S2 By supplying an etchant to the upper surface of the substrate W in the etchant supply step (step S2), the metal layer 103 in the recess 100 is removed (etching step), as shown in FIG. 12(a). At the end of the etchant supply step, it is preferable that the metal layer 103 in the recess 100 is completely removed as shown in FIG. 12(b).
- step S3 the etchant 110 is discharged outside the substrate W, and the solvent component in the etchant 110 is evaporated. Therefore, the etchant is concentrated, and as shown in FIG. 12(c), the concentrated etchant 110 remains in the recess 100 (concentration step).
- the recess 100 As described in the first embodiment, if the width W1 of the recess 100 provided on the main surface of the substrate W is 5 nm or less, the recess 100 is very narrow and the etchant 110 remains at the bottom of the recess 100. It's easy to do.
- the etchant 110 By evaporation of the solvent component, the etchant 110 remains in the recess 100, while the side surface 104b of the recess forming surface 104 is exposed. Unlike FIG. 12(c), a part of the bottom surface 104a of the recess forming surface 104 may be exposed.
- the etchant 110 is concentrated, the substrate W is transported from the wet processing unit 2W to the dry processing unit 2D. As shown in FIG. 12D, the dry processing unit 2D performs the gaseous oxidizing agent supply step (step S13) to supply the upper surface of the substrate W with the gaseous oxidizing agent 114. As shown in FIG.
- the concave portion forming surface 104 Since the concave portion forming surface 104 is exposed by the etchant removing step, the concave portion forming surface 104 (especially the side surface 104b) can be favorably hydrophilized by allowing the gaseous oxidizing agent 114 to enter the concave portion 100. (hydrophilization step).
- the substrate W is transferred from the dry processing unit 2D to the wet processing unit 2W.
- the rinse liquid 113 is supplied to the upper surface of the substrate W in the rinse liquid supply step (step S6). As a result, the rinse liquid 113 enters the concave portion 100 as shown in FIG. 12(e).
- the rinse liquid 113 can easily enter the recess 100 compared to the case where the recess 100 is entirely filled with liquid.
- the width W1 of the recess 100 is 5 nm or less, the movement of the rinse liquid 113 into the recess 100 is likely to be restricted.
- the side surface 104 b of the concave portion forming surface 104 is hydrophilized by the gaseous oxidizing agent 114 . Therefore, the rinse liquid 113 can smoothly enter the recess 100 .
- a recess 100 with a width W1 of 5 nm or less is a diffusion layer dominated by ion diffusion rather than fluid movement. Since the rinse liquid 113 that has entered the recess 100 comes into contact with the etching liquid 110, a difference in ion concentration (concentration gradient) between the rinse liquid 113 and the etching liquid 110 occurs. Specifically, the etchant 110 having a high concentration of the etching ions 111 and the rinse liquid 113 containing no etching ions 111 are brought into contact with each other. Therefore, in order to uniformize the concentration of the etching ions 111, the etching ions 111 are diffused into the rinse liquid 113 (ion diffusion step), as shown in FIG. 12(f).
- the rinse liquid 113 is supplied to the upper surface of the substrate W to perform the ion diffusion process of diffusing the etching ions 111 into the rinse liquid 113 .
- the etching ions 111 move out of the recess 100, and the amount of etching ions 111 remaining in the recess 100 is reduced.
- the rinse liquid is removed from the upper surface of the substrate W in the rinse liquid removing step (step S7). Therefore, the rinse liquid 113 can be removed from the concave portion 100 as shown in FIG. 12(g).
- the etching ions 111 are diffused in the rinse liquid 113 in the rinse liquid supply step, and most of the etching ions 111 are discharged to the outside of the substrate W together with the rinse liquid 113 . Therefore, it is possible to prevent the etching ions 111 from remaining in the recesses 100 due to the concentration of the rinse liquid 113 .
- the substrate processing according to the second embodiment it is possible to hydrophilize the concave portion forming surface 104 without using liquid. Therefore, it is possible to prevent the ion concentration in the rinse liquid 113 from increasing due to the liquid used for hydrophilizing the substrate W (the liquid oxidizing agent of the first embodiment) being mixed into the rinse liquid 113 .
- both the supply of the etchant 110 to the upper surface of the substrate W and the evaporation of the solvent component of the etchant 110 from the upper surface of the substrate W cause the spin chuck 5 to hold the substrate W. is executed as is. Therefore, the etchant 110 can be quickly concentrated after the etching is completed. Further, by rotating the spin chuck 5 at a high speed while the opposing member 6 is placed at the decompression position, the space SP1 in contact with the upper surface of the substrate W is decompressed, and the etchant can be rapidly concentrated.
- the dry processing unit 2D may include, instead of the gas oxidation processing unit 80, a light irradiation processing unit 70 that oxidizes the substrate W by generating an oxidant by light irradiation.
- FIG. 13 is a schematic cross-sectional view for explaining a configuration example of the light irradiation processing unit 70. As shown in FIG.
- the light irradiation processing unit 70 includes a base 72 having a mounting surface 72a on which the substrate W is mounted, a light processing chamber 71 that houses the base 72, and an upper surface of the substrate W mounted on the mounting surface 72a.
- a light irradiation member 73 that irradiates light such as ultraviolet light, a plurality of lift pins 75 that pass through the base 72 and move up and down, and a pin elevation drive mechanism 76 that moves the plurality of lift pins 75 up and down.
- a loading/unloading port 71a for the substrate W is provided on the side wall of the optical processing chamber 71, and the optical processing chamber 71 has a gate valve 71b for opening and closing the loading/unloading port 71a.
- the hand H of the transfer robot CR can access the optical processing chamber 71 when the loading/unloading port 71 a is open.
- the substrate W is horizontally held at the second predetermined holding position by being placed on the base 72 .
- the second holding position is the position of the substrate W shown in FIG. 13, and is the position where the substrate W is held in a horizontal posture.
- the light irradiation member 73 includes, for example, a plurality of light irradiation lamps.
- a light irradiation lamp is, for example, a xenon lamp, a mercury lamp, a deuterium lamp, or the like.
- the light irradiating member 73 is configured to irradiate ultraviolet rays of, for example, 1 nm or more and 400 nm or less, preferably 1 nm or more and 300 nm or less.
- the light irradiation member 73 is connected to an energizing mechanism 74 such as a power source, and the light irradiating member 73 (the light irradiation lamp thereof) irradiates light by supplying power from the energizing mechanism 74. do. Due to the light irradiation, ozone is generated in the atmosphere in contact with the main surface of the substrate W, and the upper surface of the substrate W is oxidized by the ozone.
- a plurality of lift pins 75 are inserted into a plurality of through holes 78 penetrating through the base 72 and the optical processing chamber 71 respectively.
- a plurality of lift pins 75 are connected by connecting plates 77 .
- the plurality of lift pins 75 are arranged at an upper position (a position indicated by a chain double-dashed line in FIG. 13 ) supporting the substrate W above the mounting surface 72 a by raising and lowering the connecting plate 77 by a pin lifting drive mechanism 76 , and a tip end of the lift pin 75 .
- the lower position (the position indicated by the solid line in FIG. 13) where the portion (upper end portion) is retracted below the placement surface 72a.
- the pin lifting drive mechanism 76 may have an electric motor or an air cylinder, or may have an actuator other than these.
- FIG. 14 is a flowchart for explaining another example of substrate processing according to the second embodiment.
- the substrate processing shown in FIG. 14 differs from the substrate processing shown in FIG. 11 in that the light irradiation step (step S20) is performed as the dry oxidation step instead of the gaseous oxidant supply step (step S13). be.
- step S10 Each process from the first carry-in process (step S10) to the first carry-out process (step S12) is the same as the substrate processing shown in FIG.
- the substrate W unloaded from the wet processing unit 2W is loaded into the dry processing unit 2D by the transport robot CR and handed over to the plurality of lift pins 75 located at the upper position (second loading step: step S12).
- the substrate W is mounted on the mounting surface 72a by the pin lifting drive mechanism 76 moving the plurality of lift pins 75 to the lower position. Thereby, the substrate W is horizontally held (second substrate holding step).
- the light irradiation step (step S20) of irradiating the upper surface of the substrate W with light is performed. Specifically, the light irradiation to the substrate W is started when the power supply mechanism 74 supplies electric power to the light irradiation member 73 .
- the recess forming surface 104 (especially the side surface 104b) is oxidized (light irradiation step, dry oxidation step). That is, the concave portion forming surface 104 (particularly, the side surface 104b) is hydrophilized (hydrophilization step).
- the light irradiation member 73 functions as a hydrophilizing member that hydrophilizes the concave portion forming surface 104 exposed by the concentration of the etchant 110 .
- the state of the vicinity of the upper surface of the substrate W during substrate processing is the same as in FIG. . More specifically, although the gaseous oxidizing agent 114 is supplied in FIG. 12D, in the substrate processing shown in FIG.
- wet oxidation using a liquid oxidizing agent (substrate processing according to the first embodiment) and dry oxidation using light irradiation or a gaseous oxidizing agent (substrate processing according to the second embodiment) are selected as necessary. can.
- step S6 in the substrate processing according to the second embodiment, as in the substrate processing according to the first embodiment, after the rinse liquid removing step (step S6), the rinse liquid The supply step (step S6) and the rinse liquid supply step (step S7) may be repeated at least once each.
- "N" in FIGS. 11 and 14 also means a natural number of 1 or more as in FIG.
- the short side (width W1) of the recess 100 is larger than 5 nm, it is possible to perform the substrate processing according to each of the above-described embodiments. However, if the short side (width W1) of the concave portion 100 is 5 nm or less, the etchant tends to remain in the concave portion 100 in the etchant removing step. Diffusion of ions into the rinse liquid is particularly useful.
- the etchant removing step (step S3), it is not necessary to shake off the etchant by rotating the substrate W.
- the pressure in the chamber 4 of the wet processing unit 2W may be reduced to evaporate the solvent component in the etchant (evaporation step under reduced pressure).
- the substrate W may be transported to the heat treatment chamber 81 of the dry processing unit 2D, and the solvent component of the etchant may be evaporated in the heat treatment chamber 81 (evaporation step under reduced pressure).
- a decompression device (not shown) such as a vacuum pump for decompressing the space inside the heat treatment chamber 81 .
- the substrate W may be heated while the pressure in the heat treatment chamber 81 is reduced, or the substrate W may be heated without reducing the pressure in the heat treatment chamber 81 (heating evaporation step).
- the substrate processing in each of the above-described embodiments is performed on the upper surface of the substrate W.
- each substrate process may also be performed on the underside of the substrate W.
- the processing unit 2 may have a plurality of processing liquid storage tanks that respectively store the etchant, the liquid oxidizing agent, and the rinse liquid, instead of the wet processing unit 2W and the dry processing unit 2D.
- the substrate processing apparatus 1 may be a batch-type substrate processing apparatus. In this case, substrate processing can be performed by sequentially immersing the substrate W in the processing liquid in each processing liquid storage tank.
- substrate processing apparatus 1P substrate processing apparatus 5: spin chuck (substrate holding member, etchant concentrating member, rinse liquid removing member) 10: etchant nozzle (etchant supply member) 11: liquid oxidant nozzle (hydrophilic member) 12: rinse liquid nozzle (rinse liquid supply member) 73: Light irradiation member (hydrophilic member) 94: Gas introduction port (hydrophilic member) 100: recess 103: metal layer (layer to be removed) 104: Concave-formed surface 110: Etching liquid 111: Etching ions 112: Liquid oxidizing agent 113: Rinse liquid 114: Gaseous oxidizing agent A1: Rotational axis W: Substrate
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Abstract
Description
図1Aは、処理対象となる基板Wのデバイス面の表層部の構造を説明するための模式的な断面図である。図1Bは、図1Aに示す矢印IBから見た図である。基板Wは、シリコンウエハ等の基板であり、一対の主面を有する。一対の主面のうち少なくとも一方が、凹凸パターンが形成されたデバイス面である。一対の主面のうちの一方は、凹凸パターンが形成されていない非デバイス面であってもよいし、一対の主面がともにデバイス面であっても、互いに異なる凹凸パターンが形成されている場合もあり得る。
図2Aは、この発明の第1実施形態に係る基板処理装置1の構成を説明するための平面図である。図2Bは、基板処理装置1の構成を説明するための立面図である。
図5は、基板処理装置1によって実行される基板処理の一例を説明するための流れ図である。図5には、主として、コントローラ3がプログラムを実行することによって実現される処理が示されている。図6A~図6Dは、基板処理装置1によって実行される基板処理の各工程の様子を説明するための模式図である。
図9は、第2実施形態に係る基板処理装置1Pの構成を説明するための平面図である。
図11は、第2実施形態に係る基板処理装置1Pによって基板処理の一例が行われているときの基板Wの様子を説明するための模式図である。第2実施形態に係る基板処理が、第1実施形態に係る基板処理(図5を参照)と主に異なる点は、ドライ処理ユニット2Dによって基板Wの親水化が行われる点である。
ドライ処理ユニット2Dは、ガス酸化処理ユニット80の代わりに、光照射によって酸化剤を発生させて基板Wを酸化する光照射処理ユニット70を備えていてもよい。図13は、光照射処理ユニット70の構成例を説明するための模式的な断面図である。
図14は、第2実施形態に係る基板処理の別の例を説明するための流れ図である。図14に示す基板処理が図11に示す基板処理と異なる点は、ドライ酸化工程として、ガス状酸化剤供給工程(ステップS13)の代わりに、光照射工程(ステップS20)が実行される点である。
この発明は、以上に説明した実施形態に限定されるものではなく、さらに他の形態で実施することができる。
1P :基板処理装置
5 :スピンチャック(基板保持部材、エッチング液濃縮部材、リンス液除去部材)
10 :エッチング液ノズル(エッチング液供給部材)
11 :液状酸化剤ノズル(親水化部材)
12 :リンス液ノズル(リンス液供給部材)
73 :光照射部材(親水化部材)
94 :ガス導入ポート(親水化部材)
100 :凹部
103 :金属層(被除去層)
104 :凹部形成面
110 :エッチング液
111 :エッチングイオン
112 :液状酸化剤
113 :リンス液
114 :ガス状酸化剤
A1 :回転軸線
W :基板
Claims (13)
- 凹部を形成する凹部形成面を含む主面を有し、前記凹部内に被除去層が形成されている基板を処理する基板処理方法であって、
エッチングイオンを含有するエッチング液を前記基板の主面に供給して、前記被除去層をエッチングするエッチング工程と、
前記基板の主面上の前記エッチング液を濃縮する濃縮工程と、
前記エッチング液の濃縮によって露出した前記凹部形成面を親水化する親水化工程と、
前記親水化工程の後、前記基板の主面にリンス液を供給することによって、前記エッチングイオンを前記リンス液中に拡散させるイオン拡散工程と、
前記基板の主面から前記リンス液を除去するリンス液除去工程とを含む、基板処理方法。 - 前記凹部の幅が5nm以下である、請求項1に記載の基板処理方法。
- 前記被除去層が金属層である、請求項1または2に記載の基板処理方法。
- 前記イオン拡散工程が、前記凹部内において前記リンス液と前記エッチング液とが接触することによって発生するイオン濃度勾配を利用して前記エッチングイオンを前記リンス液中に拡散させる工程を含む、請求項1~3のいずれか一項に記載の基板処理方法。
- 前記リンス液除去工程の後、前記イオン拡散工程および前記リンス液除去工程が少なくとも一回ずつ繰り返される、請求項1~4のいずれか一項に記載の基板処理方法。
- 前記親水化工程が、前記凹部形成面を酸化する酸化工程を含む、請求項1~5のいずれか一項に記載の基板処理方法。
- 前記酸化工程が、前記基板の主面に液状酸化剤を供給する液状酸化剤供給工程を含む、請求項6に記載の基板処理方法。
- 前記イオン拡散工程の前に、前記基板の主面に供給された液状酸化剤を前記基板の主面から除去する酸化剤除去工程をさらに含む、請求項7に記載の基板処理方法。
- 前記酸化工程が、前記基板の主面へのガス状酸化剤の供給、および、前記基板の主面へ光の照射の少なくともいずれかを実行するドライ酸化工程を含む、請求項6に記載の基板処理方法。
- 前記濃縮工程が、前記基板の主面を乾燥させる乾燥工程を含む、請求項1~9のいずれか一項に記載の基板処理方法。
- 前記エッチング工程が、基板保持部材に保持された前記基板の主面に向けてエッチング液ノズルから前記エッチング液を吐出して前記エッチング液を前記基板の主面に供給するエッチング液供給工程を含み、
前記乾燥工程が、前記基板の主面の中心部を通り前記基板の主面に対して直交する回転軸線まわりに前記基板保持部材を回転させることによって前記基板を回転させて、前記エッチング液に含有される溶媒成分を前記基板の主面から蒸発させる回転蒸発工程を含む、請求項10に記載の基板処理方法。 - 前記乾燥工程が、前記基板の主面に接する空間を減圧することによって前記エッチング液に含有される溶媒成分を前記基板の主面から蒸発させる減圧蒸発工程を含む、請求項10または11に記載の基板処理方法。
- 凹部を形成する凹部形成面を含む主面を有し、前記凹部内に被除去層が形成されている基板を処理する基板処理装置であって、
エッチングイオンを含有し前記被除去層をエッチングするエッチング液を前記基板の主面に供給するエッチング液供給部材と、
前記基板の主面上の前記エッチング液を濃縮するエッチング液濃縮部材と、
前記エッチング液の濃縮によって露出した前記凹部形成面を親水化する親水化部材と、
前記エッチングイオンを液中に拡散させるリンス液を前記基板の主面に供給するリンス液供給部材と、
前記基板の主面から前記リンス液を除去するリンス液除去部材とを含む、基板処理装置。
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JPH09270414A (ja) * | 1996-03-30 | 1997-10-14 | Samsung Electron Co Ltd | 半導体製造装置及びこれを用いたウェーハ処理方法 |
JP2003297802A (ja) * | 2002-03-29 | 2003-10-17 | Tokyo Electron Ltd | 基板処理装置及び基板処理方法 |
JP2009182136A (ja) * | 2008-01-30 | 2009-08-13 | Tokyo Electron Ltd | ポリシリコン膜の除去方法および記憶媒体 |
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