WO2022140807A1 - Verfahren zur herstellung eines einkristallinen kristalls, insbesondere eines saphirs - Google Patents
Verfahren zur herstellung eines einkristallinen kristalls, insbesondere eines saphirs Download PDFInfo
- Publication number
- WO2022140807A1 WO2022140807A1 PCT/AT2021/060489 AT2021060489W WO2022140807A1 WO 2022140807 A1 WO2022140807 A1 WO 2022140807A1 AT 2021060489 W AT2021060489 W AT 2021060489W WO 2022140807 A1 WO2022140807 A1 WO 2022140807A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- crucible
- seed crystal
- axis
- crystal
- crucible wall
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 107
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 30
- 239000010980 sapphire Substances 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 29
- 238000002425 crystallisation Methods 0.000 claims abstract description 7
- 230000008025 crystallization Effects 0.000 claims abstract description 7
- 239000000155 melt Substances 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 13
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000004071 biological effect Effects 0.000 description 1
- 238000009750 centrifugal casting Methods 0.000 description 1
- 230000002925 chemical effect Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/001—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
Definitions
- the invention relates to a method for producing a monocrystalline crystal or a plurality of monocrystals in a chamber of a furnace, in particular a sapphire.
- WO 2012/067372 A2 describes a device for producing a sapphire single crystal, comprising a chamber, a crucible arranged therein, in which the aluminum oxide melt is contained, a heater arranged outside the crucible in order to heat the crucible, and a heat supply unit disposed above a single crystal growing in the crucible to supply heat to the single crystal.
- a reflector is also provided in this device, which reflects the heat generated in the chamber to a surface of the monocrystal.
- the object of the present invention was to produce a high-quality monocrystal which, when divided into wafers, produces as little waste material as possible and, overall, to reduce the energy consumption per wafer produced.
- This object is achieved according to the invention by a method of the type mentioned at the outset in that a single-crystal seed crystal is arranged in a bottom region of a crucible with a crucible wall in the shape of a cylinder jacket or forms a bottom of the crucible and a crystallographic c-axis of the seed crystal corresponding to a direction in height the crucible wall extending longitudinal axis of the crucible is aligned, whereupon a base material is arranged over the seed crystal in the crucible and melted, crystal growth occurring progressively by crystallization at a boundary layer between melted base material and seed crystal in the direction of the c-axis.
- the solution according to the invention enables the production of very high-quality wafers. Wafers cut transversely to the c-axis of an ingot formed from the monocrystal also have a defined position of their c-axis, which is an essential quality feature, especially with regard to optical applications.
- the solution according to the invention also results in fewer rejects, since the production of ingots of inferior quality can be significantly reduced. Overall, therefore, the energy expenditure required for the production of the monocrystals can also be reduced.
- the c-axis of the seed crystal is arranged to coincide with the longitudinal axis of the crucible.
- the solution according to the invention is particularly suitable for the production of sapphire, which is why it can be provided according to an advantageous variant of the invention that Al2O3 is used as the base material.
- the seed crystal is essentially disc-shaped
- the c-axis of the seed crystal coincides with the longitudinal center axis of the seed crystal.
- the position of the c-axis can be marked on the seed crystal.
- the crucible is open at the top when viewed from the seed crystal and a mirror of a melt of the base material by means of at least one heating element, which is above an open side of the crucible is heated from above.
- a heat diffuser element is arranged between the heating element and the open side of the crucible in order to produce a uniform heat distribution.
- the crucible wall In order to prevent the formation of defects in the single crystal, provision can be made for the crucible wall to have constant thermal conductivity and/or constant mechanical properties over its entire extent.
- the crucible wall has a similar surface configuration on the inside of the crucible wall.
- the crucible wall is closed in the form of a ring and is seamless.
- the crucible wall can have a similar structural design over its entire extent.
- FIG. 1 shows a first possible exemplary embodiment of a device for growing an artificially produced sapphire crystal, in section
- 2 shows a second possible embodiment of a device for growing an artificially produced sapphire crystal, in section
- 3 shows a third exemplary embodiment of a device for growing an artificially produced sapphire crystal, in section.
- FIG. 1 shows a first exemplary embodiment of a device 1 which is used or designed for growing a crystal, in particular an artificially produced sapphire crystal.
- Sapphire has the chemical formula AI2O3 and occurs in nature and is used, among other things, as a gemstone or the like.
- the synthetic or artificial production takes place starting from a so-called base material 2, which can have a lumpy, granular up to a powdery structure. Larger pieces can also be used to achieve better fill density.
- the base material 2 is introduced into a receiving device or receiving vessel, generally referred to as a crucible 3, and is melted there in a known manner by supplying heat.
- crystal “K” is preferably a single-crystal form of aluminum oxide (AI2O3).
- the synthetically produced sapphire crystal “K” has a hardness value of 9 on the Mohs scale.
- products made from it such as wafers, watch glasses, housings, light-emitting diodes or the like, have a high scratch resistance. Crystals "K” with crystal-clear properties or, depending on the additive, with a colored appearance are preferably formed.
- the device 1 comprises a crucible wall 4, which in turn has a first end region 5 and a second end region 6 arranged at a distance therefrom.
- a longitudinal axis 7 extends between the two end regions 5 and 6.
- the first end portion 5 open.
- the second end region 6 forms the bottom end section and is designed to be completely open or open to a large extent.
- the crucible wall 4 is basically tubular and can have a wide variety of cross-sectional shapes with respect to the longitudinal axis 7 .
- the cross-sectional shape depends on the cross-section of the crystal “K” to be made.
- the inner cross section can be round, oval or polygonal.
- the polygonal cross-section can be formed, for example, by a square, a rectangle, a pentagon, a hexagon, an octagon or the like.
- the crucible wall 4 in turn defines a crucible wall inner surface 8 and a crucible wall outer surface 9 , a crucible wall thickness 10 being defined by the two crucible wall surfaces 8 and 9 viewed in the radial direction.
- the crucible wall 4 is to be closed off on the bottom side in its second end area 6 with a crucible bottom 12 .
- the crucible wall 4 and the crucible bottom 12 thus define the receiving space 11.
- the crucible base 12 itself is or will be formed exclusively from a plate 13 made of a previously artificially produced sapphire crystal “K”.
- the entire crucible base 12 is preferably formed exclusively by the plate 13 made of the previously artificially produced sapphire crystal “K”.
- a seed crystal for the sapphire crystal “K” to be produced is thus formed by the plate 13 forming the crucible bottom 12 .
- the dividing line between the plate 13 and the already newly produced sapphire crystal “K” was shown with a dashed line, since at the beginning of the melting process of the base material 2 and the formation of the melt "S” the surface of the plate facing the receiving space 11 13 is at least partially or completely melted and, as the cooling and crystallization progresses, a coherent, one-piece sapphire crystal “K” is formed.
- the plate 13 forming the crucible floor 12 can have a plate thickness 14 which comes from a plate thickness value range, the lower limit of which is
- the open first end area 5 of the crucible wall 4 can be covered by a crucible lid 15 .
- a material from the group consisting of iridium (Ir), tungsten (W), molybdenum (Mo) can be selected as a possible material for forming the crucible wall 4 and/or the crucible cover 15 .
- the sapphire crystal “K” and also the plate 13 forming the crucible bottom 12 are or will be crystal-clear to transparent, it is possible to carry out the most varied of measurements into the receiving space 11 through the plate 13 .
- at least one sensor 16 must be provided for this purpose.
- the at least one sensor 16 is arranged on the side of the plate 13 forming the crucible bottom 12 that faces away from the receiving space 11 and is indicated in simplified form.
- the sensor 16 can be in communication with a control device 17 and transmit the measured value(s) determined to it.
- the sensor 16 can be designed, for example, to determine the relative position of a boundary layer 18 between the solidified sapphire crystal “K” and the melt “S” from the base material 2 that is still above it.
- the measuring beams emitted by the sensor 16 are indicated or shown in dashed lines up to the boundary layer 18 .
- the measuring beams ending at the melt surface are indicated with dash-dotted lines in this exemplary embodiment and also in the exemplary embodiments described below.
- a sensor 16 which can also be referred to as a detector, feeler, measuring sensor or pick-up, is a technical component that can qualitatively or quantitatively record specific physical or chemical properties and/or the material composition of its surroundings as a measured variable. These variables are recorded by means of physical, chemical or biological effects and converted into an electrical cal signal converted and optionally transmitted to the control device 17.
- the system with the device 1 and the process sequence can be regulated and controlled by means of the control device 17 .
- the crucible wall 4 rests with its bottom second end region 6 - namely with its bottom crucible end face - on the plate 13 forming the crucible bottom 12 and made of the previously artificially produced sapphire crystal "K “ can be supported on top.
- the outer dimension of the plate 13 is thus to be made larger than the clear inner dimension defined by the inner surface 8 of the crucible wall.
- the plate 13 forming the crucible bottom 12 can have an outer dimension 19 which corresponds at most to a cross-sectional dimension defined by the outer surface 9 of the crucible wall. This prevents the plate from protruding radially beyond the outer dimensions of the crucible wall 4 .
- the outer dimension 19 of the plate 13 can be selected to be smaller than the outer cross-sectional dimension defined by the crucible wall outer surface 9, as indicated by dashed lines.
- the crucible wall 4 can also be supported by means of the plate 13 on a support device that is not specified in more detail.
- the support device is formed by individual support elements, preferably arranged distributed over the circumference.
- a heating device 20 is indicated schematically, by means of which the base material 2 introduced into the receiving space 11 is melted to form a molten bath and the melt “S” is crystallized and solidified as it cools to form the sapphire crystal “K” to be produced.
- FIG. 2 shows a further and possibly independent exemplary embodiment of the device 1, the same reference numerals or component designations as in the previous FIG. 1 being used again for the same parts. In order to avoid unnecessary repetitions, reference is made to the detailed description in the preceding FIG. 1 .
- the device 1 in turn also comprises the crucible wall 4, optionally the crucible lid 15 and the crucible bottom 12 formed from the crystalline plate 13.
- the plate 13 forming the crucible bottom 12 here has an outer dimension 19 which corresponds at most to a cross-sectional dimension defined by the inner surface 8 of the crucible wall. Furthermore, the plate 13 is inserted into the receiving space 11 on the bottom side.
- a plurality of holding lugs 22 can be provided.
- the retaining projections 22 protrude beyond the inner surface 8 of the crucible wall in the direction of the longitudinal axis 7 and are preferably distributed over the circumference of the inner surface 8 of the crucible wall.
- the retaining lugs 22 can form an integral part of the crucible wall 4 and can be formed from the same material or material as the crucible wall 4 .
- integral is understood here to mean that the holding attachments 22 are formed in one piece with the crucible wall 4 .
- the plate 13 forming the crucible bottom 12 is supported on the holding lugs 22 on their respective side facing the open first end region 5 .
- the holding lugs 22 are mostly designed as projections or lugs. However, it would also be possible to form the retaining projections 22 by a retaining flange that runs continuously over the inner circumference.
- the outer dimension 19 of the plate 13 forming the crucible bottom 12 can be chosen such that its outer circumferential end face 23 bears continuously and sealingly against the inner surface 8 of the crucible wall.
- the plate 13 should lie against the inner surface 8 of the crucible wall in a liquid-tight manner.
- the previously described sensor 16 can also be provided here. Since the plate 13 is preferably inserted completely into the receiving space 11 , the crucible wall 4 can be supported with its bottom second end region 6 on at least one support element 24 .
- FIG. 3 shows a further embodiment of the device 1, which may be independent of itself, with the same reference numerals or component designations as in the previous FIGS. 1 and 2 being used again for the same parts.
- the device 1 in turn also comprises the crucible wall 4, optionally the crucible lid 15 and the crucible bottom 12 formed from the crystalline plate 13.
- the plate 13 forming the crucible bottom 12 also has the outer dimension 19 here, which corresponds at most to a cross-sectional dimension defined by the inner surface 8 of the crucible wall. Furthermore, the plate 13 is inserted into the receiving space 11 on the bottom side.
- the outer dimension 19 of the plate 13 forming the crucible bottom 12 can be selected in such a way that its outer peripheral end face 23 bears continuously and sealingly against the inner surface 8 of the crucible wall.
- the plate 13 should lie against the inner surface 8 of the crucible wall in a liquid-tight manner.
- the crucible wall 4 and the plate 13 forming the crucible bottom 12 are jointly supported on a component of the device 1 generally referred to as the supporting device 25 .
- the support device 25 can be formed by individual support elements or by a support plate. Depending on the design of the support device 25 , it has at least one penetration 26 penetrating the support device 25 in the direction of the longitudinal axis 7 .
- the purpose of the at least one penetration 26 is to allow the previously described sensor 16 to look into the receiving space 11 . In this way, the determination or the most varied of determinations can be carried out with the sensors 16 designed for this purpose.
- the removal of the finished and crystallized sapphire crystal "K” can be done either through the open fen formed second end area 6, as shown and described in Figs. 1 and 3, or by a compressive force (demolding force) applied on the bottom side on the finished and crystallized sapphire crystal "K” in the direction of the open first end area 5 the crucible wall 4 are removed from the mold.
- the method for growing the artificially produced sapphire crystal “K” can be preferably performed using the apparatus 1 having the crucible wall 4 and the crystalline material plate 13 constituting the crucible bottom 12 as a seed crystal.
- a crucible with a closed bottom can also be used, with the seed crystal or the plate 13 then being inserted into the crucible.
- the crystallographic c-axis is understood here as the optical axis of the crystal, along which each polarization component of a light beam experiences the same refractive index.
- the seed crystal is preferably arranged so that its c-axis is placed coincident with the longitudinal axis of the crucible.
- a number of crystals can also be grown simultaneously in a furnace by arranging a number of crucibles 3 in the furnace or in a chamber of the furnace. If several crystals are grown in a furnace at the same time, the procedure described here is carried out for each crystal. The simultaneous cultivation of several crystals in one furnace is particularly advantageous in terms of energy consumption.
- the seed crystal is essentially disc-shaped and has a first flat side and a second flat side as well as a longitudinal center axis, which longitudinal center axis is formed in the direction from the first flat side to the second flat side, wherein the c-axis of the seed crystal coincides with the central longitudinal axis of the seed crystal.
- the curvature of the seed crystal can be concave or convex.
- the curvature here refers to the curvature of a seed crystal, ie after a one-sided or double-sided polishing of the seed crystal.
- the position of the c-axis can be marked on the seed crystal, in particular on its side facing away from the direction of crystal growth, for example with a point or a notch.
- the position of the c-axis can also be marked accordingly on the surface of the finished ingot opposite the seed crystal. Furthermore, the positions of the wafers on the finished ingot can be marked so that cutting the wafers out of the ingot is simplified.
- a mirror of a melt of the base material can be measured by means of at least one in Fig. 1 with the reference numeral 28 provided upper heating element, which can be arranged over an open side of the crucible 4 can be heated directly from above, with between the heating element 28 and the open, upper side of the crucible preferably a heat diffuser element 27, for example a diffuser plate, can be arranged directly on the heating element to produce an even heat distribution.
- the crucible wall 4 of each crucible 3 can have the same thermal conductivity and/or the same optical and/or the same mechanical properties over its entire extent.
- the crucible wall 4 can also have a similar surface configuration on its crucible inner wall 8 .
- the cylindrical crucible wall 4 can be closed in the form of a ring and seamless and can have a similar structural design over its entire extent. The crucible wall 4 therefore preferably has no joining or connection point.
- the seamless and homogeneous design of the crucible wall 4 avoids a local weakening of the material, as represented by a weld seam. In particular, can be avoided in that defects form along the weld seam in the single crystal during crystal growth.
- a centrifugal casting process is particularly suitable for producing the crucible wall 4 .
- the crucible wall 4 can then be connected to the crucible floor 12 . If the crucible bottom 12 is formed by the seed crystal itself, the crucible wall 4 can be placed on the crucible bottom. If the crucible bottom 12 is formed from the same or a similar material as the crucible wall 4, the crucible wall 4 can be connected to the crucible bottom 12, for example by welding. In this case, the seed crystal can be placed in the crucible 4.
- the single crystal to be produced preferably has an outside diameter or a cross-sectional area which corresponds to the inside diameter or the inside geometry of the crucible 3 .
- the resulting single crystal thus preferably fills the cross-sectional area of the crucible 3 completely.
- the single crystal is therefore preferably not pulled out of the crucible.
- the finished single crystal can have a diameter of between 5 cm and 50 cm and a height of between 5 cm and 80 cm, for example.
- these values are for illustrative purposes and should not be construed as limiting the scope.
- the monocrystal ingot obtained can be cut into wafers, which are essentially disc-shaped.
- - have a longitudinal center axis, which longitudinal center axis is formed in the direction from the first flat side to the second flat side, wherein at least one flat side has a curvature; which curvature has a highest point and a lowest point with respect to the longitudinal central axis; wherein a distance between the highest point and the lowest point of the curvature with respect to the longitudinal central axis is less than 7pm.
- the longitudinal central axis of the wafer is also formed by the c-axis, it being possible for the position of the c-axis to be marked optically on the wafer, for example by means of a point.
- the curvature of the wafer can be concave or convex.
- the relative position of the boundary layer 18 between the already solidified sapphire crystal “K” and the melt can be determined from the sensor 16 through the plate 13 forming the crucible bottom 12 "S" can be determined.
- the crystal plate forming the seed crystal is designed to be at least transparent or translucent to the point of being crystal clear. It is therefore possible for measuring beams emitted or emitted by the sensor 16 to pass through the plate 13 .
- All information on value ranges in the present description is to be understood in such a way that it also includes any and all sub-ranges, e.g. the information 1 to 10 is to be understood in such a way that all sub-ranges, starting from the lower limit 1 and the upper limit 10, are also included , i.e. all subranges start with a lower limit of 1 or greater and end with an upper limit of 10 or less, e.g. 1 to 1.7, or 3.2 to 8.1, or 5.5 to 10.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2021414764A AU2021414764A1 (en) | 2020-12-29 | 2021-12-28 | Process for manufacturing a monocrystalline crystal, in particular a sapphire |
EP21840774.0A EP4271856A1 (de) | 2020-12-29 | 2021-12-28 | Verfahren zur herstellung eines einkristallinen kristalls, insbesondere eines saphirs |
CN202180088104.0A CN116745470A (zh) | 2020-12-29 | 2021-12-28 | 用于制造单晶的晶体、特别是蓝宝石的方法 |
US18/270,095 US20240060206A1 (en) | 2020-12-29 | 2021-12-28 | Process for manufacturing a monocrystalline crystal, in particular a sapphire |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ATA51145/2020 | 2020-12-29 | ||
ATA51145/2020A AT524600B1 (de) | 2020-12-29 | 2020-12-29 | Verfahren zur Herstellung eines einkristallinen Kristalls, insbesondere eines Saphirs |
Publications (1)
Publication Number | Publication Date |
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WO2022140807A1 true WO2022140807A1 (de) | 2022-07-07 |
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ID=79425649
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/AT2021/060489 WO2022140807A1 (de) | 2020-12-29 | 2021-12-28 | Verfahren zur herstellung eines einkristallinen kristalls, insbesondere eines saphirs |
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US (1) | US20240060206A1 (de) |
EP (1) | EP4271856A1 (de) |
CN (1) | CN116745470A (de) |
AT (1) | AT524600B1 (de) |
AU (1) | AU2021414764A1 (de) |
WO (1) | WO2022140807A1 (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT526528B1 (de) * | 2022-10-28 | 2024-04-15 | Fametec Gmbh | Verbesserter Schmelztiegel zur Herstellung eines Einkristalls |
AT526529A4 (de) * | 2022-10-28 | 2024-04-15 | Fametec Gmbh | Verfahren zur Herstellung eines Einkristalls mit verbessertem Füllgrad eines Schmelztiegels |
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JPH01145392A (ja) * | 1987-11-30 | 1989-06-07 | Tanaka Kikinzoku Kogyo Kk | イリジウムるつぼ及びその製造方法 |
WO2012054845A2 (en) * | 2010-10-21 | 2012-04-26 | Advanced Renewableenergy Co. Llc | Intermediate materials and methods for high-temperature applications |
WO2012067372A2 (en) | 2010-11-15 | 2012-05-24 | Lg Siltron Inc. | Sapphire ingot grower |
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JP2015182944A (ja) * | 2014-03-26 | 2015-10-22 | 住友金属鉱山株式会社 | サファイア単結晶の製造方法 |
KR20170026734A (ko) | 2015-08-27 | 2017-03-09 | 주식회사 월덱스 | 사파이어 그로잉용 펠릿 및 그 제조방법 |
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US20110179992A1 (en) * | 2008-10-24 | 2011-07-28 | Schwerdtfeger Jr Carl Richard | Crystal growth methods and systems |
FR2980489B1 (fr) * | 2011-09-28 | 2014-09-19 | Ecm Technologies | Four de solidification dirigee de cristaux |
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2020
- 2020-12-29 AT ATA51145/2020A patent/AT524600B1/de active
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2021
- 2021-12-28 US US18/270,095 patent/US20240060206A1/en active Pending
- 2021-12-28 WO PCT/AT2021/060489 patent/WO2022140807A1/de active Application Filing
- 2021-12-28 AU AU2021414764A patent/AU2021414764A1/en active Pending
- 2021-12-28 EP EP21840774.0A patent/EP4271856A1/de active Pending
- 2021-12-28 CN CN202180088104.0A patent/CN116745470A/zh active Pending
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US4096025A (en) * | 1974-02-21 | 1978-06-20 | The United States Of America As Represented By The Secretary Of The Army | Method of orienting seed crystals in a melt, and product obtained thereby |
JPH01145392A (ja) * | 1987-11-30 | 1989-06-07 | Tanaka Kikinzoku Kogyo Kk | イリジウムるつぼ及びその製造方法 |
WO2012054845A2 (en) * | 2010-10-21 | 2012-04-26 | Advanced Renewableenergy Co. Llc | Intermediate materials and methods for high-temperature applications |
WO2012067372A2 (en) | 2010-11-15 | 2012-05-24 | Lg Siltron Inc. | Sapphire ingot grower |
US20130152851A1 (en) | 2011-12-15 | 2013-06-20 | Spx Corporation | Bulk Growth Grain Controlled Directional Solidification Device and Method |
JP2015182944A (ja) * | 2014-03-26 | 2015-10-22 | 住友金属鉱山株式会社 | サファイア単結晶の製造方法 |
KR20170026734A (ko) | 2015-08-27 | 2017-03-09 | 주식회사 월덱스 | 사파이어 그로잉용 펠릿 및 그 제조방법 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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AT526528B1 (de) * | 2022-10-28 | 2024-04-15 | Fametec Gmbh | Verbesserter Schmelztiegel zur Herstellung eines Einkristalls |
AT526528A4 (de) * | 2022-10-28 | 2024-04-15 | Fametec Gmbh | Verbesserter Schmelztiegel zur Herstellung eines Einkristalls |
AT526529A4 (de) * | 2022-10-28 | 2024-04-15 | Fametec Gmbh | Verfahren zur Herstellung eines Einkristalls mit verbessertem Füllgrad eines Schmelztiegels |
AT526529B1 (de) * | 2022-10-28 | 2024-04-15 | Fametec Gmbh | Verfahren zur Herstellung eines Einkristalls mit verbessertem Füllgrad eines Schmelztiegels |
Also Published As
Publication number | Publication date |
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CN116745470A (zh) | 2023-09-12 |
US20240060206A1 (en) | 2024-02-22 |
EP4271856A1 (de) | 2023-11-08 |
AT524600A1 (de) | 2022-07-15 |
AT524600B1 (de) | 2023-05-15 |
AU2021414764A1 (en) | 2023-08-17 |
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