WO2022138662A1 - Gabarit de serrage, procédé de production de gabarit de serrage et dispositif de nettoyage - Google Patents

Gabarit de serrage, procédé de production de gabarit de serrage et dispositif de nettoyage Download PDF

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Publication number
WO2022138662A1
WO2022138662A1 PCT/JP2021/047386 JP2021047386W WO2022138662A1 WO 2022138662 A1 WO2022138662 A1 WO 2022138662A1 JP 2021047386 W JP2021047386 W JP 2021047386W WO 2022138662 A1 WO2022138662 A1 WO 2022138662A1
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Prior art keywords
substrate
grip portion
strut
contact surface
substrate contact
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PCT/JP2021/047386
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English (en)
Japanese (ja)
Inventor
浩 浜島
Original Assignee
京セラ株式会社
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Application filed by 京セラ株式会社 filed Critical 京セラ株式会社
Priority to CN202180084441.2A priority Critical patent/CN116583935A/zh
Priority to JP2022571515A priority patent/JPWO2022138662A1/ja
Publication of WO2022138662A1 publication Critical patent/WO2022138662A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present invention relates to a clamp jig, a method for manufacturing the clamp jig, and a cleaning device.
  • a cleaning device that cleans a semiconductor substrate with a predetermined chemical solution or a cleaning solution such as pure water in order to remove contaminants such as particles, organic contaminants, metal impurities, etc. adhering to the semiconductor substrate, and a polymer after etching treatment has been used. in use.
  • Patent Document 1 discloses a liquid treatment apparatus having a holding means for horizontally holding a substrate, and the holding means has a claw portion for holding an end face of the substrate. There is.
  • Patent Document 2 discloses a clamper that presses the substrate from above, and describes that the material of the clamper is silicon carbide.
  • Reference Document 3 describes a clamping jig having an adhesion prevention layer (conductive layer) that suppresses adhesion of the resist material on the contact surface side in contact with the substrate.
  • Japanese Patent No. 5726686 Japanese Unexamined Patent Publication No. 4-130627 Japanese Unexamined Patent Publication No. 2014-154866
  • the clamp jig is located at one end of the strut portion and the strut portion, and is located at the grip portion for gripping the outer peripheral portion of the substrate and the other end portion of the strut portion. And includes a base for supporting the support column.
  • the strut portion, grip portion and base portion include ceramics containing silicon carbide, silicon carbide or boron carbide as a main component. At least one surface selected from the group consisting of the substrate contact surface of the grip portion, the outer surface of the grip portion, the outer surface of the strut portion, the substrate facing surface of the strut portion, and the surface opposite to the substrate facing surface of the strut portion. Has conductivity, and the substrate contact surface of the grip has the highest surface resistance value.
  • the method for manufacturing a clamping jig according to the present disclosure is a portion corresponding to the outer surface of the grip portion, a portion corresponding to the outer surface of the strut portion, and a substrate facing surface of the strut portion in a molded body in which granules are pressure-molded.
  • Graphite, graphene, carbon nanotubes, fullerene and amorphous carbon are placed in at least one portion selected from the group consisting of the portion corresponding to the portion corresponding to the above and the portion corresponding to the surface facing the substrate of the support portion and the portion corresponding to the surface opposite to the substrate facing surface.
  • the cleaning device includes a plurality of the above-mentioned clamp jigs.
  • the concentration of hydrofluoric acid decreases as the number of times of cleaning the substrate increases.
  • a large current flows instantaneously toward the contact surface, and the peripheral portion of the contact surface may be damaged by the impact.
  • An object of the present disclosure is to provide a clamping jig in which the peripheral portion of the substrate contact surface of the grip portion is not easily damaged even if a sudden electrostatic discharge occurs and a current flows instantaneously toward the substrate contact surface. be.
  • the clamping jig according to the present disclosure is opposite to the substrate contact surface of the grip portion, the outer surface of the grip portion, the outer surface of the strut portion, the substrate facing surface of the strut portion, and the substrate facing surface of the strut portion. It has conductivity with at least one surface selected from the group consisting of side surfaces. Further, the substrate contact surface of the grip portion has the highest surface resistance value. As a result, in the clamping jig according to the present disclosure, even if a sudden electrostatic discharge occurs and a current flows instantaneously toward the substrate contact surface, the substrate contact surface of the grip portion, the outer surface of the grip portion, and the strut portion Charges can be gradually released through the outer surface of the. Therefore, in the clamping jig according to the present disclosure, the peripheral portion of the substrate contact surface of the grip portion is less likely to be damaged.
  • FIG. 1 is a schematic diagram showing a schematic configuration of a cleaning device 30 equipped with a clamp jig 22 according to an embodiment of the present disclosure.
  • the cleaning device 30 shown in FIG. 1 includes a housing 1 and a chamber 2 that provides a space inside the housing 1 for cleaning various substrates W such as semiconductor wafers and liquid crystal display (LCD) substrates. ..
  • substrates W such as semiconductor wafers and liquid crystal display (LCD) substrates. ..
  • the housing 1 has a first window portion 3 for carrying the substrate W into the housing 1 and carrying out the substrate W from the housing 1.
  • the first window portion 3 is opened and closed by the first shutter 4.
  • the transfer arm 5 mounts the substrate W, and carries the substrate W into the housing 1 through the first window portion 3 and carries out the substrate W from the housing 1.
  • the first window portion 3 is closed by the first shutter 4 except when the substrate W is carried in and out.
  • the first shutter 4 is installed inside the housing 1 and opens and closes the first window portion 3 from the inside of the housing 1.
  • the chamber 2 has a second window portion 6 for carrying the substrate W into the chamber 2 and carrying out the substrate W from the chamber 2.
  • the second window portion 6 is opened and closed by the second shutter 7.
  • the transfer arm 5 enters or exits the chamber 2 through the second window portion 6 and transfers the substrate W to the rotary chuck 8 installed inside the chamber 2.
  • the second shutter 7 is installed inside the chamber 2 and opens and closes the second window portion 6 from the inside of the chamber 2.
  • a gas supply unit 9 for supplying a dry gas such as nitrogen into the chamber 2 is provided on the top plate of the chamber 2.
  • the gas supply unit 9 is used to prevent filling of the chamber 2 due to evaporation of the cleaning liquid (for example, an acid containing fluorine such as hydrofluoric acid and hypofluorous acid) supplied to the substrate W held by the rotary chuck 8. , Supply dry gas downward.
  • the cleaning liquid for example, an acid containing fluorine such as hydrofluoric acid and hypofluorous acid
  • the processing cup 10 for accommodating the substrate W, the rotary chuck 8 for holding the substrate W in the processing cup 10, the under plate 11 located away from the back surface of the substrate W, and the surface of the substrate W A top plate 16 located at a distance is provided.
  • the processing cup 10 has an inclined portion at the top and a drain 10a at the bottom.
  • a position where the upper portion of the processing cup 10 on which the inclined portion is formed is located above the substrate W held by the rotary chuck 8 (the position shown by the solid line in FIG. 1; hereinafter referred to as “processing position”). (There is), and the upper part is a position below the substrate W held by the rotary chuck 8 (in FIG. 1, it is a position indicated by a two-dot chain line. Hereinafter, it may be described as a “retracted position”. ) And can be raised and lowered.
  • the processing cup 10 When the substrate W is transferred between the transfer arm 5 and the rotary chuck 8, the processing cup 10 is held in the retracted position so as not to hinder the entry and exit of the transfer arm 5. On the other hand, when cleaning the substrate W held by the rotary chuck 8, the processing cup 10 is held at the processing position. The processing cup 10 held at the processing position prevents the cleaning liquid supplied to the substrate W from scattering around, and further guides the cleaning liquid used for cleaning the substrate W to the drain 10a.
  • the drain 10a is connected to the cleaning liquid recovery line and the exhaust duct (neither is shown).
  • the drain 10a is designed to dispose of mist and the like generated in the processing cup 10 and to collect the cleaning liquid in the chamber 2.
  • the rotary chuck 8 has a disk-shaped rotary plate 12 and a cylindrical cylindrical body 13 connected to the rotary plate 12.
  • a support tool (not shown) for supporting the substrate W and a clamping jig 22 for fixing the substrate W are attached to the outer peripheral portion of the rotating plate 12.
  • Supports are arranged at at least three locations along the circumferential direction at equal intervals to support the substrate W from the back surface side.
  • the clamp jigs 22 are arranged at at least three locations along the circumferential direction at equal intervals, and the substrate W is fixed from the outer peripheral surface side.
  • a belt 14 is wound around the outer peripheral surface of the cylindrical body 13. By driving the belt 14 by the motor 15, the cylindrical body 13 and the rotating plate 12 can be rotated, and the substrate W fixed by the clamping jig 22 can be rotated.
  • the under plate 11 is connected to the central portion of the rotating plate 12 and the first shaft body 24 penetrating the inside of the cylindrical body 13.
  • the first shaft body 24 is fixed to the horizontal plate 25, and the horizontal plate 25 can be raised and lowered together with the first shaft body 24 by a first raising and lowering mechanism 26 such as an air cylinder.
  • the underplate 11 and the first shaft body 24 are provided with a first flow path 23 for supplying a cleaning liquid and a drying gas toward the substrate W.
  • the disk-shaped top plate 16 located near the top plate of the chamber 2 is connected to the lower end of the cylindrical second shaft body 17.
  • the top plate 16 can be rotated by a motor 19 provided on the horizontal plate 18.
  • the second shaft body 17 is rotatably supported on the lower surface of the second horizontal plate 18.
  • the second horizontal plate 18 can be moved up and down in the vertical direction by a second raising and lowering mechanism 20 such as an air cylinder fixed to the top plate of the chamber 2.
  • a second flow path 21 for supplying a cleaning liquid and a drying gas is provided along the axial direction.
  • the top plate 16 When the substrate W is transferred between the rotary chuck 8 and the transfer arm 5, the top plate 16 is held at a position close to the top plate of the chamber 2 so as not to collide with the transfer arm 5. When cleaning the surface (upper surface) of the substrate W, the top plate 16 is lowered to a position close to the surface of the substrate W held by the clamping jig 22. The cleaning liquid or the like is supplied toward the substrate W through the second flow path 21.
  • the back surface of the substrate W is cleaned using the under plate 11 and the first flow path 23 at the same time as cleaning the front surface of the substrate W described above.
  • Examples of the method for cleaning the back surface of the substrate W include the following methods. First, the under plate 11 is brought close to the back surface of the substrate W. Next, a cleaning liquid is supplied from the first flow path 23 between the substrate W and the underplate 11 to form a cleaning liquid layer. Hold for a predetermined time to perform cleaning liquid treatment. Next, pure water or the like is supplied from the first flow path 23 between the substrate W and the underplate 11, and the chemical solution is poured out to perform a rinsing treatment. Next, the substrate W is rotated at high speed while supplying dry gas between the substrate W and the underplate 11 from the first flow path 23.
  • cleaning liquid examples include fluorine-containing acids such as hydrofluoric acid and hypofluorous acid.
  • the substrate W is held by the clamping jig 22, the substrate W is cleaned. At this time, after raising the treatment cup 10, the used chemical solution, pure water, or the like is discharged from the drain 10a.
  • the substrate W is transferred from the clamping jig 22 to the support.
  • the first shutter 4 and the second shutter 7 are opened to allow the transfer arm 5 to enter the chamber 2.
  • the substrate W is transferred from the rotary chuck 8 to the transfer arm 5 by the reverse procedure of the procedure for transferring the substrate W from the transfer arm 5 to the rotary chuck 8 described above, and the substrate W is transferred from the cleaning device 30. Carry out.
  • the clamp jig 22 is located at one end of the strut portion 22a and the strut portion 22a, and has a grip portion 22b for gripping the outer peripheral portion of the substrate W and a strut portion. It is located at the other end of 22a and includes a base 22c for supporting the strut 22a.
  • the clamp jig 22 includes ceramics containing silicon carbide, silicon carbide or boron carbide as a main component.
  • the strut portion 22a, the grip portion 22b, and the base portion 22c are formed of ceramics containing silicon carbide, silicon carbide, or boron carbide as a main component.
  • the main component means a component that occupies 80% by mass or more of the total 100% by mass of the components constituting the ceramics.
  • the ceramics having silicon nitride as a main component refer to composite ceramics containing silicon carbide, silicon nitride and silicon carbonitride, and the total content of these components is 80% by mass or more. Regardless of whether the main component is silicon carbide, silicon carbide or boron carbide, components other than the main component may include, for example, boron, free carbon and the like.
  • the components constituting the ceramics can be identified by an X-ray diffractometer using CuK ⁇ rays.
  • the content of each component can be determined by, for example, an ICP (Inductively Coupled Plasma) emission spectroscopic analyzer or a fluorescent X-ray analyzer.
  • the strut portion 22a is a member for connecting the grip portion 22b and the base portion 22c, which will be described later.
  • the grip portion 22b is a member for gripping the outer peripheral portion of the substrate W by the substrate contact surface 22b1.
  • the grip portion 22b is located at one end of the strut portion 22a.
  • the grip portion 22b is processed into a shape that makes it easy to grip the outer peripheral portion of the substrate W. Specifically, a slit, a groove, or the like is formed in the grip portion 22b.
  • the substrate contact surface 22b1 shown in FIG. 2 is planar, but the shape of the substrate contact surface 22b1 may be a curved surface or a bent surface.
  • the grip portion 22b includes a substrate contact surface 22b1 and a portion located on the outer peripheral side of the substrate contact surface 22b1.
  • the base portion 22c is located at the other end of the support column portion 22a, that is, on the side opposite to the position of the grip portion 22b.
  • the clamp jig 22 is provided with, for example, an insertion hole for inserting a metal pin 221, and the pin 221 is inserted into the insertion hole. If the pin 221 is made of metal, the electric charge can be gradually released through the pin 221 even if a sudden electrostatic discharge described later occurs. As a result, the peripheral portion of the substrate contact surface 22b1 of the grip portion 22b is less likely to be damaged.
  • the substrate contact surface 22b1 of the grip portion 22b, the outer surface 22b2 of the grip portion 22b, the outer surface 22a2 of the strut portion 22a, the substrate facing surface 22a1 of the strut portion 22a, and the strut portion 22a.
  • At least one surface selected from the group consisting of the surface facing the substrate 22a1 and the surface 22a3 on the opposite side has conductivity.
  • “having conductivity” means that the surface resistance value at 20 ⁇ 2 ° C. is 104 ⁇ or less.
  • the substrate contact surface 22b1 of the grip portion 22b has the highest surface resistance value.
  • the grip portion A group consisting of a board contact surface 22b1 of 22b, an outer surface 22b2 of the grip portion 22b, an outer surface 22a2 of the support column 22a, a substrate facing surface 22a1 of the support column 22a, and a surface 22a3 of the support column 22a opposite to the board facing surface 22a1. Charges can be gradually released through at least one more selected surface. As a result, the peripheral portion of the substrate contact surface 22b1 of the grip portion 22b is less likely to be damaged.
  • the surface resistance value of the grip portion 22b on the substrate contact surface 22b1, the outer surface 22b2 of the grip portion 22b, the outer surface 22a2 of the strut portion 22a, the substrate facing surface 22a1 of the strut portion 22a, and the substrate facing surface 22a1 of the strut portion 22a.
  • the difference from the surface resistance value at least one surface selected from the group consisting of the opposite surfaces 22a3 is preferably 50 ⁇ or more. Further, the difference is preferably 90 ⁇ or more.
  • the surface resistance value of the grip portion 22b on the substrate contact surface 22b1 is about 100 ⁇ or more and 1000 ⁇ or less, the outer surface 22b2 of the grip portion 22b, the outer surface 22a2 of the strut portion 22a, the substrate facing surface 22a1 of the strut portion 22a, and the strut portion. It is preferable that the surface resistance value on at least one surface selected from the group consisting of the surface 22a1 facing the substrate of 22a and the surface 22a3 on the opposite side is about -10 ⁇ or more and 10 ⁇ or less. When the surface resistance value of each surface is within such a range, the peripheral portion of the substrate contact surface 22b1 of the grip portion 22b is less likely to be damaged.
  • the surface resistance value is a measured value at 20 ⁇ 2 ° C. on each surface.
  • To the ratio of the minimum value (RS min ) (RS min / RS max ) is preferably 0.82 or more and 0.99 or less. When the ratio (RS min / RS max ) is in this range, the difference in the surface resistance values of each surface becomes small, and the electric charge can be released gradually and evenly with little difference between the surfaces.
  • the surface resistance value may be measured using, for example, a surface resistance meter (for example, Hioki Electric Co., Ltd., High Tester 3127-10).
  • the substrate contact surface 22b1 of the grip portion 22b may be coated with a film containing diamond-like carbon (DLC) as a main component.
  • DLC diamond-like carbon
  • Diamond-like carbon (DLC) is a carbon having an amorphous structure having a sp2 bond having a graphite structure and a sp3 bond having a diamond structure.
  • the term "diamond-like carbon (DLC) -based film” refers to the G band observed in the Raman spectroscopic spectrum in the range of 1500 to 1640 cm -1 and the wave number of 1300 to 1400 cm -1 . It is a membrane having a D band observed in the range of.
  • the strongest peak intensity among the peaks existing in the range of 1500 to 1640 cm -1 is HG
  • the strongest peak intensity among the peaks having a wave number in the range of 1300 to 1400 cm -1 is HD. Then, it is preferable that HG > HD . If this relationship is satisfied, the tightness of the film can be maintained.
  • the film may contain, for example, Fe of 0.05 mass ppm or less and Ni of 0.01 mass ppm or less, other than diamond-like carbon (DLC).
  • the thickness of the film containing DLC as a main component is, for example, 0.1 ⁇ m or more and 1 ⁇ m or less, and particularly preferably 0.4 ⁇ m or more and 0.8 ⁇ m or less.
  • the surface of the film is at least on the substrate contact surface 22b1 side of the outer surface 22b2 of the grip portion 22b, and may decrease as the distance from the substrate contact surface 22b1 increases.
  • the surface of the film is at least the outer surface 22b2 side of the grip portion 22b of the outer surface 22a2 of the support portion 22a, and may decrease as the distance from the outer surface 22b2 of the grip portion 22b increases.
  • the surface may contain at least one selected from the group consisting of graphite, graphene, carbon nanotubes, fullerenes and amorphous carbons.
  • the cutting level at the load length ratio of 25% in the roughness curve of the substrate contact surface 22b1 of the grip portion 22b and the cutting at the load length ratio of 75% in the roughness curve is preferably, for example, 0.01 ⁇ m or more and 0.06 ⁇ m or less.
  • the acid is an acid containing fluorine such as hydrofluoric acid and hypofluorous acid.
  • the contact angle of pure water or ultrapure water with respect to the substrate contact surface 22b1 can be obtained by the static drip method described in JIS R 3257: 1999.
  • the contact angle may be measured using, for example, a contact angle meter (CA-X150 type manufactured by Kyowa Surface Chemistry Co., Ltd.).
  • the average value of the cutting level difference (R ⁇ c) is 0.06 ⁇ m or less, the anchor effect of fluorine on the substrate contact surface 22b1 of the grip portion 22b becomes smaller. As a result, the adhesion of fluorine to the substrate contact surface 22b1 of the grip portion 22b is suppressed.
  • the cutting level difference (R ⁇ c) can be measured using a laser microscope (manufactured by KEYENCE Co., Ltd., ultra-deep color 3D shape measuring microscope (VK-X1000 or its successor model)) in accordance with JIS B 0601: 2001. can.
  • the measurement conditions are coaxial epi-illumination for the illumination method, 480 times the measurement magnification, no cutoff value ⁇ s, 0.08 mm for the cutoff value ⁇ c, no cutoff value ⁇ f, and correction of the termination effect at one location.
  • the measurement range may be set to 710 ⁇ m ⁇ 533 ⁇ m, and the measurement range may be set from a total of two locations on the substrate contact surface 22b1 of the grip portion 22b.
  • the average value of the cutting level difference (R ⁇ c) may be calculated using the cutting level difference (R ⁇ c) obtained from a total of eight lines to be measured.
  • the average value of the root mean square slope (R ⁇ q) in the roughness curve is preferably 0.12 or less, for example.
  • the average value of the root mean square inclination (R ⁇ q) is 0.12 or less, the unevenness of the substrate contact surface 22b1 of the grip portion 22b becomes smaller. Therefore, even if it comes into contact with the substrate W, it is possible to prevent the substrate W from being scratched.
  • the measurement conditions for the root mean square slope (R ⁇ q) are the same as the measurement conditions for the cutting level difference (R ⁇ c).
  • the method for manufacturing a clamp jig according to an embodiment includes the following steps (a) to (d).
  • (A) In a molded body containing silicon carbide as a main component, a portion corresponding to the outer surface of the grip portion, a portion corresponding to the outer surface of the strut portion, a portion corresponding to the substrate facing surface of the strut portion, and the substrate of the strut portion.
  • At least one selected from the group consisting of graphite, graphene, carbon nanotubes, fullerenes and amorphous carbon in at least one portion selected from the group consisting of the portion corresponding to the facing surface and the portion corresponding to the opposite surface.
  • C A step of polishing a portion of the sintered body corresponding to the substrate contact surface of the grip portion.
  • DLC film A film containing DLC as a main component (hereinafter, a film containing DLC as a main component may be referred to as "DLC film") is formed on a portion of the polished grip portion corresponding to the substrate contact surface.
  • step (a) first, granules containing silicon carbide as a main component are prepared by, for example, the following procedure. Coarse-granular powder and fine-granular powder are prepared as silicon carbide powder, and ion-exchanged water and, if necessary, a dispersant are pulverized and mixed by a ball mill or a bead mill for 40 to 60 hours to form a slurry.
  • the fine granular powder may be 85% by mass or more and 94% by mass or less, and the coarse granular powder may be 6% by mass or more and 15% by mass or less. good.
  • the range of the respective particle sizes of the fine granular powder and the coarse granular powder after pulverization and mixing is 0.4 ⁇ m or more and 4 ⁇ m or less and 11 ⁇ m or more and 34 ⁇ m or less.
  • the coarse-grained powder and the fine-grained powder may be either ⁇ -type or ⁇ -type.
  • a sintering aid composed of boron carbide powder and amorphous carbon powder or phenol resin and a binder were added to the obtained slurry and mixed, and then spray-dried to carbonize as the main component.
  • a binder include acrylic emulsion, polyvinyl alcohol, polyethylene glycol, polyethylene oxide and the like.
  • a nitrogen source may be added to the slurry, and a resole-type phenol resin containing nitrogen may be used as the phenol resin.
  • a clamping jig having an RS min / RS max of 0.82 or more and 0.99 or less, for example, the nitrogen content with respect to 100 parts by mass of silicon carbide powder is 0.0001 parts by mass or more and 0.0015 parts by mass. It should be as follows.
  • the obtained granules are filled in a molding die and pressed with a pressure of, for example, 49 MPa or more and 147 MPa to obtain a molded product.
  • a pressure of, for example, 49 MPa or more and 147 MPa to obtain a molded product.
  • At least one powder selected from the group consisting of graphite, graphene, carbon nanotubes, fullerenes and amorphous carbon is attached to the portion.
  • an IPA solution containing these powders is sprayed using a spray coating device.
  • its average particle size may be, for example, 10 ⁇ m or more and 100 ⁇ m or less.
  • the content of the graphite powder with respect to 100 parts by mass of the IPA solution may be, for example, 1 part by mass or more and 5 parts by mass or less.
  • the molded product to which the powder is attached is subjected to the step (b). Specifically, the molded body to which the powder is attached is held in a nitrogen atmosphere at a temperature of 450 ° C. or higher and 650 ° C. or lower for 2 hours or more and 10 hours or less to degreas it, thereby obtaining a degreased body. Next, the degreased body is held in a reduced pressure atmosphere of an inert gas such as argon at a temperature of 1800 ° C. or higher and 2200 ° C. or lower for 3 hours or longer and 6 hours or lower to obtain a sintered body.
  • an inert gas such as argon
  • Silicon carbide powder having an average particle size of 0.5 ⁇ m or more and 10 ⁇ m or less, ion-exchanged water, and if necessary, a dispersant are pulverized and mixed by a ball mill or a bead mill for 40 hours or more and 60 hours or less to form a slurry.
  • the silicon carbide powder may be either ⁇ -type or ⁇ -type.
  • the content of unavoidable impurities in 100% by mass of the silicon carbide powder is preferably 200% by mass or less, particularly 150% by mass or less.
  • nitriding treatment is carried out at a temperature of 1500 ° C. or higher and 1950 ° C. or lower in a nitrogen partial pressure of 1 MPa or more and 100 MPa or less.
  • a part of silicon carbide in the molded body reacts with nitrogen to generate silicon nitride and free carbon, and the silicon carbide becomes a nitride strongly bonded by silicon nitride.
  • a part of silicon carbide dissolves nitrogen to become silicon carbide. As silicon nitride is produced, densification progresses.
  • the nitrogen partial pressure of the nitriding treatment may be 1 MPa or more and 50 MPa or less, and the temperature may be 1550 ° C. or more and 1950 ° C. or less.
  • the relative density of ceramics can be 80% or more by setting silicon nitride in 28% by mass or more and free carbon in 7% by mass or more out of the total 100% by mass of the components constituting the ceramics.
  • the nitriding treatment time may be 3 hours or more and 5 hours or less.
  • the content of unavoidable impurities in the degreased body can be further reduced.
  • the time of the calcining treatment is preferably 0.5 hours or more and 12 hours or less.
  • the average particle size of the boron carbide powder is 0.5 ⁇ m or more and 2 ⁇ m or less.
  • Graphite powder and silicon carbide powder are added to the boron carbide powder.
  • the amount of graphite powder added to 100 parts by mass of the boron carbide powder is, for example, 1 part by mass or more and 20 parts by mass or less, and the amount of silicon carbide powder added is, for example, 0.1 part by mass or more and 10 parts by mass or less.
  • the graphite powder is, for example, highly oriented pyrolytic graphite (HOPG) powder.
  • a sintering aid at least among the borohydrides of the elements selected from the 4th group, 5th group and 6th group of the periodic table and the oxides of the elements selected from the 3rd group of the periodic table in order to promote the sintering. Any one of them may be added.
  • the boride to be added is, for example, zirconium boride (ZrB 2 ), titanium boride (TiB 2 ), and chromium boride (CrB 2 ).
  • the oxide to be added is, for example, yttrium oxide (Y 2 O 3 ).
  • the degreased body is calcined in a reduced pressure atmosphere or a vacuum atmosphere of an inert gas such as argon.
  • the firing is a melting step of dissolving graphite by holding it for 10 minutes or more and 10 hours or less in the temperature range of the first reference temperature of 2100 ° C. or more and 2300 ° C. or less, and the temperature rise rate is 1000 ° C./hour or more and 1200 ° C./hour or less.
  • high-pressure gas may be used to pressurize when sintering progresses and the open porosity becomes 5% or less.
  • a high-pressure GPS (Gas Pressure Sintering) method or a hot isostatic pressing (HIP) method may be used, and the gas pressure may be 1 MPa or more and 300 MPa or less. By setting the gas pressure in this range, the relative density of the ceramics becomes 95% or more.
  • sintering may be performed while applying mechanical pressure as in the hot press method or SPS (Spark Plasma Sintering) method.
  • the obtained sintered body is subjected to the step (c). Specifically, in the obtained sintered body, a portion corresponding to the substrate contact surface of the grip portion (hereinafter, this portion may be referred to as a substrate contact surface equivalent portion) is polished.
  • the polishing process includes, for example, buffing.
  • the base material of the buff is not limited, and examples thereof include felt, cotton strips, and cotton strips.
  • Examples of the abrasive include diamond powder, green carbonundum (GC) powder and the like. These abrasives may be added to oils and fats and used in a paste state.
  • the average particle size of the abrasive is, for example, 0.5 ⁇ m or more and 6 ⁇ m or less.
  • the outer diameter of the base material is 150 mm, and the rotation speed thereof is, for example, 28 m / min or more and 170 m / min or less.
  • the polishing time is, for example, 0.5 minutes or more and 5 minutes or less.
  • the cutting level difference (R ⁇ c) representing the difference between the cutting level at a load length rate of 25% in the roughness curve of the substrate contact surface of the grip portion and the cutting level at a load length rate of 75% in the roughness curve.
  • the average particle size of the polishing agent may be 0.5 ⁇ m or more and 6 ⁇ m or less.
  • the polishing time may be 3 minutes or more.
  • the sintered body that has been polished is subjected to the step (d). Specifically, in the polished sintered body, a DLC film is formed on the portion corresponding to the substrate contact surface.
  • the DLC film is formed, for example, by the following procedure.
  • the sintered body is placed in a predetermined position in the plasma processing container, and after exhausting, the sintered body is heated to 100 ° C. or higher and 450 ° C. or lower in a non-oxidizing gas atmosphere such as argon gas or nitrogen gas or in a high vacuum. Heat.
  • a non-oxidizing gas atmosphere such as argon gas or nitrogen gas or in a high vacuum.
  • Heat is supplied to the sintered body to generate discharge plasma, and the portion corresponding to the substrate contact surface of the grip portion is irradiated with ions. ..
  • a raw material gas for forming a DLC film is supplied into the plasma processing container to generate discharge plasma, and a DLC film is formed on a portion corresponding to the contact surface of the substrate.
  • the raw material gas for forming a DLC film is, for example, a hydrocarbon gas such as methane, acetylene, or toluene, and hydrogen may be added if necessary.
  • the clamp jig of the present disclosure obtained by the above-mentioned manufacturing method has a substrate contact surface of the grip portion, an outer surface of the grip portion, an outer surface of the strut portion, a substrate facing surface of the strut portion, and a substrate facing surface of the strut portion. It has conductivity with at least one surface selected from the group consisting of the surfaces opposite to the surface. Further, the substrate contact surface of the grip portion has the highest surface resistance value.
  • the clamping jig according to the present disclosure even if a sudden electrostatic discharge occurs and a current flows instantaneously toward the substrate contact surface, the substrate contact surface of the grip portion, the outer surface of the grip portion, and the strut portion Charges can be gradually released through the outer surface of the. Therefore, in the clamping jig according to the present disclosure, the peripheral portion of the substrate contact surface of the grip portion is less likely to be damaged.
  • Coarse granular powder and fine granular powder were prepared as silicon carbide powder, and silicon carbide powder and ion-exchanged water were pulverized and mixed by a ball mill for 50 hours to obtain a slurry.
  • the mass ratio of the fine granular powder to the coarse granular powder was 89.5% by mass for the fine granular powder and 10.5% by mass for the coarse granular powder.
  • the particle size range of the fine granular powder after pulverization and mixing was 0.4 ⁇ m or more and 4 ⁇ m or less, and the particle size range of the coarse granular powder was 11 ⁇ m or more and 34 ⁇ m or less.
  • a sintering aid composed of boron carbide powder and amorphous carbon powder or phenol resin and a binder were added to and mixed with the obtained slurry. Then, it was spray-dried to obtain granules containing silicon carbide as a main component.
  • Acrylic emulsion, polyvinyl alcohol, polyethylene glycol and polyethylene oxide were used as the binder.
  • the obtained granules were filled in a molding die and pressed with a pressure of 98 MPa to obtain a molded product.
  • an IPA solution containing graphite powder is sprayed onto a portion corresponding to the outer surface of the grip portion, a portion corresponding to the outer surface of the strut portion, and a portion corresponding to the substrate facing surface of the strut portion using a spray coating device. I sprayed it.
  • the average particle size of the graphite powder was 50 ⁇ m.
  • the content of graphite powder with respect to 100 parts by mass of the IPA solution was 3 parts by mass.
  • Graphite powder held the molded body in a nitrogen atmosphere at a temperature of 550 ° C. for 6 hours to degreas it, and obtained a degreased body. Then, the degreased body was held at a temperature of 2000 ° C. for 5 hours in a reduced pressure atmosphere of argon gas to obtain a sintered body.
  • the base material of the buff was felt.
  • As the abrasive, diamond powder having an average particle size shown in Table 1 was used, and this diamond powder was added to fats and oils and used in a paste state.
  • the outer diameter of the base material was 150 mm, and the rotation speed was 100 m / min.
  • the polishing time was 2 minutes.
  • a sintered body obtained by buffing the portion corresponding to the substrate contact surface of the grip portion was placed in a predetermined position in the plasma processing container. After exhausting, the sintered body was heated to 300 ° C. in an argon gas atmosphere. Next, high-frequency power and a negative bias voltage were supplied to the sintered body in argon gas to generate discharge plasma, and ion irradiation was performed on the portion corresponding to the substrate contact surface. Acetylene is supplied into the plasma processing container to generate discharge plasma, a DLC film is formed on the portion corresponding to the substrate contact surface, and the sample No. which is a clamping jig is formed. I got 1-6. A clamping jig that does not form a DLC film on the substrate contact surface equivalent portion of the sintered body is buffed, but the sample No. It was set to 7.
  • the cutting level difference (R ⁇ c) of the substrate contact surface of each sample conforms to JIS B 0601: 2001, and is a laser microscope (Keyence Co., Ltd., ultra-deep color 3D shape measurement microscope (VK-X1000 or its successor model)).
  • the measurement conditions are coaxial epi-illumination for the illumination method, 480 times the measurement magnification, no cutoff value ⁇ s, 0.08 mm for the cutoff value ⁇ c, no cutoff value ⁇ f, and correction of the termination effect at one location.
  • the measurement range was set to 710 ⁇ m ⁇ 533 ⁇ m, and the measurement range was set from a total of two points on the substrate contact surface of the grip portion.
  • the contact angle of pure water with respect to the substrate contact surface was determined by the static drip method described in JIS R 3257: 1999 using a contact angle meter (CA-X150 type manufactured by Kyowa Surface Chemistry Co., Ltd.). After immersing each sample in hydrofluoric acid for 48 hours, the sample was pulled up, washed with water, and then ultrasonically washed with pure water. The presence or absence of fluorine on the substrate contact surface of each sample after ultrasonic cleaning was detected by elemental analysis using an energy dispersive X-ray analyzer (EDS). The measurement results of each sample obtained by the above-mentioned method are shown in Table 1.
  • sample No. In Nos. 1 to 6 the substrate contact surface of the grip portion, the outer surface of the grip portion, the outer surface of the strut portion, the substrate facing surface of the strut portion, and the surface opposite to the substrate facing surface of the strut portion have conductivity.
  • the substrate contact surface of the grip has the highest surface resistance value.
  • Example 2 Sample No. of Example 1 The portion corresponding to the substrate contact surface of the grip portion of the sintered body produced by the same method as the method shown in No. 4 was buffed. The method of buffing is the same as the method shown in Example 1 except for the polishing time. Table 2 shows the polishing time of each sample.
  • Example 2 Using the same method as shown in Example 1, a DLC film was formed on the portion corresponding to the substrate contact surface of the grip portion, and the sample No. 8-11 was obtained.
  • the mean square root mean square (R ⁇ q) of the substrate contact surface of each sample was measured, and the average value was calculated.
  • the average value is shown in Table 2.
  • the measurement conditions for the root mean square slope (R ⁇ q) are the same as the measurement conditions for the cutting level difference (R ⁇ c) shown in Example 1.
  • Using each sample a disk-shaped substrate was supported at three points along the circumferential direction, and while the substrates were replaced, the presence or absence of scratches on the outer edge of the substrate was observed every time 100 substrates were supported. The observation was carried out using an optical microscope and the magnification was set to 100 times. Table 2 shows the presence or absence of scratches after supporting 2000 substrates.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)

Abstract

Un gabarit de serrage selon la présente invention comprend une partie de support, une partie de préhension est positionnée sur une extrémité de la partie de support et saisi la périphérie extérieure d'un substrat, et une partie de base est positionnée sur l'autre extrémité de la partie de support et supporte la partie de support. La partie de support, la partie de préhension et la partie de base contiennent une céramique qui a, en tant que composant principal de celles-ci, un carbure de silicium, un carbonitrure de silicium ou un carbure de bore. La surface de contact avec le substrat de la partie de préhension, conjointement avec une ou plusieurs surfaces choisies dans le groupe constitué par la surface extérieure de la partie de préhension, la surface extérieure de la partie de support, la surface faisant face au substrat de la partie de support, et la surface de la partie de support opposée à la surface tournée vers le substrat de celle-ci sont conductrices, et la surface de contact avec le substrat de la partie de préhension présente la valeur de résistance de surface la plus élevée.
PCT/JP2021/047386 2020-12-23 2021-12-21 Gabarit de serrage, procédé de production de gabarit de serrage et dispositif de nettoyage WO2022138662A1 (fr)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003092343A (ja) * 2001-09-17 2003-03-28 Dainippon Screen Mfg Co Ltd 基板保持機構、ならびにそれを用いた基板処理装置および基板処理方法
JP2003229399A (ja) * 2001-11-27 2003-08-15 Tokyo Electron Ltd 液処理装置および液処理方法
JP2005285798A (ja) * 2004-03-26 2005-10-13 Dainippon Screen Mfg Co Ltd 基板保持機構、ならびにそれを用いた基板処理装置および基板処理方法
JP2014241390A (ja) * 2013-05-13 2014-12-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2020184590A (ja) * 2019-05-09 2020-11-12 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、チャック部材
WO2021024638A1 (fr) * 2019-08-08 2021-02-11 京セラ株式会社 Outil de serrage et dispositif de nettoyage

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007109732A (ja) * 2005-10-11 2007-04-26 Mitsubishi Electric Corp 素子基板の製造方法及び基板保持装置
WO2019022258A1 (fr) * 2017-07-28 2019-01-31 京セラ株式会社 Élément porte-substrat et dispositif de fabrication de semi-conducteurs

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003092343A (ja) * 2001-09-17 2003-03-28 Dainippon Screen Mfg Co Ltd 基板保持機構、ならびにそれを用いた基板処理装置および基板処理方法
JP2003229399A (ja) * 2001-11-27 2003-08-15 Tokyo Electron Ltd 液処理装置および液処理方法
JP2005285798A (ja) * 2004-03-26 2005-10-13 Dainippon Screen Mfg Co Ltd 基板保持機構、ならびにそれを用いた基板処理装置および基板処理方法
JP2014241390A (ja) * 2013-05-13 2014-12-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2020184590A (ja) * 2019-05-09 2020-11-12 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、チャック部材
WO2021024638A1 (fr) * 2019-08-08 2021-02-11 京セラ株式会社 Outil de serrage et dispositif de nettoyage

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