WO2022127447A1 - 一种无底层取向硅钢的制备方法及其产品 - Google Patents

一种无底层取向硅钢的制备方法及其产品 Download PDF

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WO2022127447A1
WO2022127447A1 PCT/CN2021/129607 CN2021129607W WO2022127447A1 WO 2022127447 A1 WO2022127447 A1 WO 2022127447A1 CN 2021129607 W CN2021129607 W CN 2021129607W WO 2022127447 A1 WO2022127447 A1 WO 2022127447A1
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Prior art keywords
silicon steel
oriented silicon
component
bottom layer
present disclosure
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PCT/CN2021/129607
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English (en)
French (fr)
Inventor
王现辉
高倩
孙茂林
龚坚
肖辉明
刘兆月
滕仁昊
赵松山
胡志远
齐杰斌
游学昌
李瑞凤
宋东何
王爱星
Original Assignee
首钢智新迁安电磁材料有限公司
北京首钢股份有限公司
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Application filed by 首钢智新迁安电磁材料有限公司, 北京首钢股份有限公司 filed Critical 首钢智新迁安电磁材料有限公司
Priority to JP2022546669A priority Critical patent/JP7459264B2/ja
Priority to EP21905376.6A priority patent/EP4092143A4/en
Priority to MX2022010189A priority patent/MX2022010189A/es
Publication of WO2022127447A1 publication Critical patent/WO2022127447A1/zh
Priority to US17/816,654 priority patent/US20220364197A1/en

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Definitions

  • the present disclosure belongs to the technical field of silicon steel preparation, and in particular relates to a preparation method and a product of an oriented silicon steel without a bottom layer.
  • the strip In the traditional oriented silicon steel manufacturing process, the strip needs to be decarburized and annealed after cold rolling, an oxide film (composed of SiO 2 and Fe 2 SiO 4 ) will be formed on the surface of the strip, and then nitriding is performed. In the process of nitriding, N element penetrates into the surface of the strip through the oxide film. Then coat a layer of MgO release agent on the surface of the strip. When the strip steel enters the high temperature annealing stage, the oxide film formed on the surface will react with MgO to form a magnesium silicate bottom layer.
  • the magnesium silicate bottom layer can increase the interlayer resistance of the surface of the strip, and provide surface tension to improve the magnetic properties of the strip. However, this bottom layer will cause poor punching performance of conventional grain-oriented silicon steel.
  • the oxides generated by the bottom layer on the surface of the strip will hinder the movement of the magnetic domain and have a certain deterioration effect on the iron loss.
  • non-substrate oriented silicon steel is an important direction for the development of oriented silicon steel. It has both the excellent magnetic permeability of oriented silicon steel and the excellent processability of non-oriented silicon steel, and has broad application prospects in the field of high-efficiency motors and generators.
  • the surface of the silicon steel without the underlying layer can be further improved after the surface of the oriented silicon steel is polished.
  • the main problems of the current non-substrate grain-oriented silicon steel are: (1) the surface smoothing of the non-sublayer grain-oriented silicon steel is difficult; (2) the non-sublayer grain-oriented silicon steel is prone to the defects of unstable magnetic properties; (3) the production of the non-sublayer grain-oriented silicon steel During the process, due to the difference of production temperature and atmosphere of large coil, it is difficult to control the homogenization of strip surface and magnetic properties; (4) the yield of oriented silicon steel without bottom layer is low.
  • the present disclosure provides a method for preparing oriented silicon steel without a bottom layer and a product thereof.
  • the method for preparing oriented silicon steel without bottom layer according to some embodiments of the present disclosure, by controlling the thickness of the oxide film of the strip steel in the decarburization annealing stage and the cooling section of the high temperature annealing, the surface is smooth and smooth.
  • a method for preparing oriented silicon steel without bottom layer including: smelting, continuous casting, slab heating, hot rolling, normalizing, cold rolling, decarburization annealing, nitriding, coating with a release agent, High temperature annealing, hot drawing flattening and coating; of which:
  • the thickness of the oxide film on the surface of the strip steel is 1.5-2.5 ⁇ m; the atomic weight ratio of Si element and Fe element in the oxide film satisfies: Si/(Si+Fe) ⁇ 0.76;
  • the cooling section sequentially includes:
  • the protective gas is a mixed gas including nitrogen and hydrogen, and the volume percentage of hydrogen in the mixed gas is greater than 3%;
  • the protective gas is nitrogen
  • the inner cover is opened for air cooling.
  • the heating temperature is 1150°C.
  • the thickness of the oxide film on the surface layer of the strip steel is 1.5-2.5 ⁇ m, including:
  • the thickness of the oxide film on the surface layer of the strip steel is 1.9-2.3 ⁇ m.
  • the release agent in the method for preparing oriented silicon steel without bottom layer described in the present disclosure, in the process of applying a release agent, the release agent comprises: component A, component B, component C and component D;
  • the component A is MgO, or the component A is a mixture comprising MgO and Al 2 O 3 ;
  • the component B is selected from NaCl, KCl, MgCl 2 , ZnCl 2 , BaCl 2 , SrCl 2 , MnCl 2 , CaCl 2 , BiOCl, SbOCl, Bi(NO 3 ) 2 , Cu(NO 3 ) 2 , NaNO 3 , One or more of NO 3 NH 4 ;
  • the component C is a low melting point compound with a melting point of ⁇ 820°C;
  • the component D is CaO or Ca(OH) 2 .
  • the mass fraction of the Al 2 O 3 ⁇ 60 % in the mixture comprising MgO and Al 2 O 3 : the mass fraction of the Al 2 O 3 ⁇ 60 %, The volume percentage of particles with a particle size of ⁇ 10 ⁇ m is 30-60%.
  • the citric acid activity of the MgO is 200-2000S;
  • the specific surface area of the Al 2 O 3 is 15-50 m 2 /g.
  • the low-melting compound having a melting point of ⁇ 820° C. is selected from one of boron oxide, sodium carbonate, borax, and antimony oxide or two or more.
  • the low-melting compound having a melting point of ⁇ 820° C. is boron oxide or antimony oxide.
  • the component A, the component B, the component C and the component in the release agent, the component A, the component B, the component C and the component
  • the mass ratio of fraction D was 100:(0.5-6):(0.6-3):(0.6-5.3).
  • the release agent in the method for preparing oriented silicon steel without bottom layer described in the present disclosure, in terms of mass fraction, the release agent further comprises NH 4 Cl;
  • the mass ratio of the component A to the NH 4 Cl is 100:(1-2.1).
  • the release agent comprises: component A, component B, component C, component D, and NH 4 Cl;
  • the mass ratio of the component A, the component B, the component C, the component D and NH 4 Cl is 100:3:2:5:1.9.
  • the component A is a mixture comprising MgO and Al 2 O 3 ;
  • the component B is MgCl 2 ;
  • Described component C is antimony oxide
  • the component D is Ca(OH) 2 .
  • a four-stage cleaning process is adopted in the process of hot drawing and leveling, which sequentially includes:
  • Pickling is carried out by using a mixed solution containing sulfuric acid with a mass concentration of 1% to 10% and nitric acid with a mass concentration of 1% to 5%; wherein, the pickling temperature is 50 to 80° C.;
  • the dew point is 38-58° C.; the heating temperature is 800-850° C.
  • the Fe ion complexing agent in the method for preparing oriented silicon steel without a bottom layer described in the present disclosure, may be ammonium citrate.
  • the ammonium citrate can further prevent the residual Fe ions on the surface of the strip from being oxidized, thereby obtaining a good surface.
  • the cast slab comprises: C 0.05-0.09%, Si 2.9-4.6%, Mn 0.05- 0.20%, S 0.005 ⁇ 0.020%, Als 0.0225 ⁇ 0.0325%, N 0.0045 ⁇ 0.0145%, Sn 0.01 ⁇ 0.30%, Sb 0.002 ⁇ 0.15%, Cr 0.01 ⁇ 0.5%, Cu 0.01 ⁇ 0.8%, the rest are Fe and non- Avoid impurity elements.
  • the cast slab comprises: C 0.06-0.07%, Si 3.2-3.5%, Mn 0.16- 0.17%, S 0.015 ⁇ 0.019%, Als 0.028 ⁇ 0.030%, N 0.012 ⁇ 0.013%, Sn 0.10 ⁇ 0.20%, Sb 0.09 ⁇ 0.11%, Cr 0.3 ⁇ 0.4%, Cu 0.1 ⁇ 0.3%, the rest are Fe and non- Avoid impurity elements.
  • non-prime oriented silicon steel obtained by the preparation method of the non-prime oriented silicon steel described in the present disclosure.
  • the thickness of the non-substrate oriented silicon steel obtained by the preparation method of the non-sublayer oriented silicon steel described in the present disclosure may be 0.18 mm, 0.20 mm, 0.23 mm, 0.27 mm, 0.30 mm, and 0.35 mm.
  • the preparation method of the oriented silicon steel without bottom layer provided by the present disclosure by controlling the thickness of the oxide film of the strip steel in the decarburization annealing stage and the process of the high-temperature annealing cooling section, and at the same time optimizing the hot stretching and leveling process, a four-stage cleaning process is selected.
  • the technology can better solve the defects of poor surface uniformity, poor finish, low yield, and deteriorating magnetic properties of the non-substrate oriented silicon steel, so as to obtain the non-substrate oriented silicon steel with uniform surface, excellent smoothness and good magnetic properties, and the pass rate reaches 90 %above.
  • a method for preparing oriented silicon steel without bottom layer may include: smelting, continuous casting, slab heating, hot rolling, normalizing, cold rolling, decarburization annealing, nitriding, coating isolation agents, high temperature annealing, hot stretch flattening and coating; of which:
  • the thickness of the oxide film on the surface of the strip steel may be 1.5-2.5 ⁇ m; the atomic weight ratio of Si element and Fe element in the oxide film satisfies: Si/(Si+Fe) ⁇ 0.76;
  • the cooling section may sequentially include:
  • the protective gas can be a mixed gas including nitrogen and hydrogen, and the volume percentage of hydrogen in the mixed gas is more than 3%;
  • the protective gas can be nitrogen
  • the inner cover is opened for air cooling.
  • the preparation method of the oriented silicon steel without bottom layer by controlling the thickness of the oxide film of the strip steel in the decarburization annealing stage to obtain a dense oxide film with low activity, the generation of magnesium aluminum spinel is prevented, And prevent the iron element reduced by a large amount of iron oxides in the oxide film from attaching to the surface of the strip, resulting in the rough surface of the final product.
  • the process parameters of the strip steel in the high temperature annealing and cooling section the non-substrate oriented silicon steel with good surface smoothness, good surface homogenization, high yield and excellent magnetic properties can be obtained.
  • the heating temperature in the method for preparing oriented silicon steel without bottom layer described in the present disclosure, in the process of heating the slab, the heating temperature may be 1150°C.
  • the inventor has conducted a lot of research on the heating temperature of the slab, and finally selects the most suitable heating temperature to be 1150°C, so that the obtained oriented silicon steel without bottom layer becomes a finished product. higher rate.
  • the thickness of the oxide film on the surface layer of the strip steel may be 1.5-2.5 ⁇ m, including:
  • the thickness of the oxide film on the surface layer of the strip steel is 1.9-2.3 ⁇ m.
  • the inventors have also conducted a lot of research on the preferred solution for the thickness of the oxide film on the surface of the strip (the thickness of the oxide film is 1.9-2.3 ⁇ m), thereby greatly promoting the final surface quality of the product.
  • the release agent in the method for preparing oriented silicon steel without bottom layer described in the present disclosure, in the process of applying the release agent, may include: component A, component B, component C and component D;
  • the component A may be MgO, or the component A may be a mixture comprising MgO and Al 2 O 3 ;
  • the component B may be selected from NaCl, KCl, MgCl 2 , ZnCl 2 , BaCl 2 , SrCl 2 , MnCl 2 , CaCl 2 , BiOCl, SbOCl, Bi(NO 3 ) 2 , Cu(NO 3 ) 2 , NaNO 3 , one or more of NO 3 NH 4 ;
  • the component C can be a low-melting compound with a melting point of ⁇ 820°C;
  • the component D may be CaO or Ca(OH) 2 .
  • the inventors According to the preparation method of oriented silicon steel without bottom layer according to some embodiments of the present disclosure, the inventors have selected specific components and contents of the release agent through a large number of optimization balance experiments, and matched with a series of process parameters, the obtained no bottom layer is obtained.
  • the surface of grain-oriented silicon steel is uniform and bright, with small residual oxides, no obvious vapor marks and small friction coefficient.
  • the mass ratio of the MgO and the Al 2 O 3 may be 90:5.
  • the inventors selected the mixture comprising MgO and Al 2 O 3 through a large number of optimization balance experiments, and the ratio of the MgO and the Al 2 O 3 to the mixture was selected.
  • the mass ratio is 90:5, which further improves the smoothness and uniformity of the strip surface.
  • the citric acid activity of the MgO may be 200-2000S;
  • the volume percentage of particles with a particle size of ⁇ 10 ⁇ m is 30-60%;
  • the specific surface area of the Al 2 O 3 is 15-50 m 2 /g.
  • the above technical solution can more effectively control the reactivity of MgO on the basis of achieving the purpose of the present disclosure, so as to avoid excessively fast reaction with oxide film and lead to poor strip surface uniformity.
  • the slurry adhesion of the release agent is improved to more effectively avoid the defects of uneven surface quality caused by uneven coating.
  • the present disclosure also limits the particle size in the release agent to reduce the hydration rate, while improving the air permeability between high temperature annealing layers, so as to better avoid water vapor marks on the surface of the strip steel caused by uneven water vapor release. Defects.
  • the low-melting compound with a melting point of ⁇ 820° C. may be selected from one of boron oxide, sodium carbonate, borax, and antimony oxide or two or more.
  • the low-melting compound having a melting point of ⁇ 820° C. may be boron oxide or antimony oxide.
  • the reaction between MgO and the oxide film SiO 2 during the high temperature annealing to form the Mg 2 SiO 4 bottom layer is a solid-phase reaction
  • the low melting point compound with a melting point ⁇ 820 °C can generate a liquid phase during the high temperature annealing, which promotes the mass transfer process and Accelerates the formation speed and porosity of the bottom layer, making it easier to remove in subsequent processes.
  • low melting point compounds with a melting point of ⁇ 820 °C can help improve the uniformity of the steel surface, and have a certain control effect on the decomposition of the inhibitor on the steel surface layer, thereby helping to stabilize the magnetic properties of the steel.
  • the component A, the component B, the component C and the The mass ratio of component D may be 100:(0.5-6):(0.6-3):(0.6-5.3).
  • the inventor has optimized the specific components and content of the release agent, which greatly promotes the surface smoothing and the improvement of magnetic properties of the non-layer oriented silicon steel. Homogenization, and make the magnetic properties of the non-substrate oriented silicon steel more stable.
  • the release agent in the method for preparing oriented silicon steel without bottom layer described in the present disclosure, in terms of mass fraction, may further comprise NH 4 Cl;
  • the mass ratio of the component A to the NH 4 Cl may be 100:(1-2.1).
  • the release agent in the method for preparing oriented silicon steel without bottom layer described in the present disclosure, may comprise: component A, component B, component C, component D, and NH 4 Cl;
  • the mass ratio of the component A, the component B, the component C, the component D and NH 4 Cl may be 100:3:2:5:1.9.
  • the inventor further optimized the specific component content ratio of the release agent, and on the basis of significantly improving the yield of the oriented silicon steel without bottom layer, it also greatly promoted the surface smoothness, surface homogeneity, and magnetic properties.
  • the component A in the method for preparing oriented silicon steel without bottom layer described in the present disclosure, may be a mixture comprising MgO and Al 2 O 3 ;
  • the component B can be MgCl 2 ;
  • the component C can be antimony oxide
  • the component D may be Ca(OH) 2 .
  • the present disclosure is more conducive to realizing the technical effects of the present disclosure by selecting specific release agent components, the final product is uniform and bright, the residual oxide degree is less than or equal to 0.03g/m 2 , there is no obvious vapor trace, and the friction coefficient is less than 0.25.
  • a four-stage cleaning process is adopted in the process of hot drawing and leveling, which may sequentially include:
  • Pickling is carried out by using a mixed solution containing sulfuric acid with a mass concentration of 1% to 10% and nitric acid with a mass concentration of 1% to 5%; wherein, the pickling temperature may be 50 to 80°C;
  • the mass concentration of the Fe ion complexing agent may be 0.5-5%;
  • a four-stage cleaning process is adopted, and a certain amount of nitric acid is added to remove the iron remaining in the high-temperature annealing and cooling stage.
  • nitric acid As well as iron oxides, while further reducing the roughness of the strip surface, it is more conducive to obtain a smooth surface.
  • the mixture containing water and Fe ion complexing agent is used for rinsing, which is more conducive to removing the iron ions remaining on the surface of the strip after pickling, and avoids the residual iron ions on the surface of the strip after the cleaning section. The secondary oxidation caused by the yellowing of the surface of the strip.
  • the dew point in the method for preparing oriented silicon steel without bottom layer described in the present disclosure, during the decarburization annealing process, the dew point may be 38-58° C.; the heating temperature may be 800-850° C.
  • controlling the dew point and heating temperature during the decarburization annealing process can not only ensure the decarburization effect, but also ensure that the target thickness of the oxide film described in the present disclosure can be achieved, and at the same time, the A denser SiO 2 layer on the surface can control the uniformity of the reaction rate of magnesium silicate formation during high temperature annealing.
  • the cast slab in the method for preparing oriented silicon steel without bottom layer described in the present disclosure, in terms of mass percentage, may comprise: C 0.05-0.09%, Si 2.9-4.6%, Mn 0.05- 0.20%, S 0.005 ⁇ 0.020%, Als 0.0225 ⁇ 0.0325%, N 0.0045 ⁇ 0.0145%, Sn 0.01 ⁇ 0.30%, Sb 0.002 ⁇ 0.15%, Cr 0.01 ⁇ 0.5%, Cu 0.01 ⁇ 0.8%, the rest can be Fe and inevitable impurity elements.
  • the cast slab in the method for preparing oriented silicon steel without bottom layer described in the present disclosure, in terms of mass percentage, may comprise: C 0.06-0.07%, Si 3.2-3.5%, Mn 0.16- 0.17%, S 0.015 ⁇ 0.019%, Als 0.028 ⁇ 0.030%, N 0.012 ⁇ 0.013%, Sn 0.10 ⁇ 0.20%, Sb 0.09 ⁇ 0.11%, Cr 0.3 ⁇ 0.4%, Cu 0.1 ⁇ 0.3%, the rest can be Fe and inevitable impurity elements.
  • the inventors have selected and optimized the chemical elements and their contents of the slab, thereby obtaining a more uniform surface, better brightness, lower friction coefficient, higher qualification rate, and magnetic properties. Better no bottom layer oriented silicon steel.
  • test groups 1 to 8 the method for preparing oriented silicon steel without bottom layer according to some embodiments of the present disclosure may include: smelting, continuous casting, slab heating, hot rolling, normalization, cold rolling, decarburization annealing, nitriding , coating release agent, high temperature annealing, hot stretching and coating.
  • the slab obtained by smelting and continuous casting is heated and kept warm and then hot-rolled into a hot-rolled sheet, and then subjected to normalization and 20-roll cold-rolling to a cold-rolled sheet; the cold-rolled sheet is subjected to decarburization annealing , Nitriding, coating with release agent, high temperature annealing after drying, hot stretching and coating to obtain finished products.
  • decarburization annealing Nitriding
  • coating with release agent high temperature annealing after drying, hot stretching and coating to obtain finished products.
  • the heating temperature can be 1150°C;
  • the thickness of the oxide film on the surface of the strip can be 1.5-2.5 ⁇ m; the atomic weight ratio of Si element and Fe element in the oxide film satisfies: Si/(Si+Fe) ⁇ 0.76; the decarburization annealing In the process of heating, the dew point can be 38 ⁇ 58°C; the heating temperature can be 800 ⁇ 850°C;
  • the release agent may comprise: Component A, Component B, Component C, Component D, and NH4Cl .
  • the component A may be MgO, or the component A may be a mixture comprising MgO and Al 2 O 3 ; in the mixture comprising MgO and Al 2 O 3 , the Al 2
  • the mass fraction of O 3 is ⁇ 60%, and the volume percentage of particles with particle size ⁇ 10 ⁇ m may be 30-60%;
  • the citric acid activity of the MgO may be 200-2000S;
  • the specific surface area of the Al 2 O 3 may be 15 ⁇ 50m 2 /g;
  • the component B may be selected from NaCl, KCl, MgCl 2 , ZnCl 2 , BaCl 2 , SrCl 2 , MnCl 2 , CaCl 2 , BiOCl, SbOCl, Bi(NO 3 ) 2 , Cu(NO 3 ) 2 , NaNO 3 , one or more of NO 3 NH 4 ;
  • the component C can be a low-melting compound with a melting point of ⁇ 820°C, and the low-melting compound with a melting point of ⁇ 820°C can be selected from one or more of boron oxide, sodium carbonate, borax, and antimony oxide;
  • the component D can be CaO or Ca(OH) 2 ;
  • the mass ratio of the component A, the component B, the component C and the component D may be 100:(0.5-6):(0.6-3):(0.6 ⁇ 5.3):(1 ⁇ 2.1);
  • the separating agent may further comprise NH 4 Cl, and the mass ratio of the component A to the NH 4 Cl may be 100:(1 ⁇ 2.1).
  • the cooling section may include:
  • the protective gas can be a mixed gas including nitrogen and hydrogen, and the volume percentage of hydrogen in the mixed gas is >3%;
  • the hood is cooled; wherein, the protective gas can be nitrogen;
  • a four-stage cleaning process is adopted, which can sequentially include:
  • the cast slab may comprise: C0.05-0.09%, Si 2.9-4.6%, Mn 0.05-0.20%, S 0.005-0.020%, Als0.0225-0.0325%, N 0.0045-0.0145%, Sn 0.01-0.30%, Sb 0.002-0.15%, Cr 0.01-0.5%, Cu 0.01-0.8%, and the rest can be Fe and inevitable impurity elements.
  • Table 2 Compositions and mass fractions of release agents according to some embodiments of the present disclosure
  • This comparative example adopts 8 comparison groups.
  • the comparison groups 1 to 8 the oriented silicon steel is prepared by using the relevant steps in the 8 test groups of the embodiment of the present disclosure. The differences are: And whether to use hot stretch leveling, high temperature annealing cooling section process is different.
  • Table 5 Composition and mass fraction of release agent provided by control group
  • Table 6 The grain-oriented silicon steels prepared in the examples and comparative examples were respectively tested for performance
  • Grade 1 uniform, bright, excellent, oxide residue ⁇ 0.03g/m 2 , no obvious vapor marks, friction coefficient ⁇ 0.25
  • Grade 2 uniform, bright, good, oxide residue ⁇ 0.05g /m 2 , local slight steam marks on the edge, friction coefficient ⁇ 0.35
  • Grade 3 relatively uniform, partial steam marks, dull luster, oxide residue ⁇ 0.07g/m 2 , friction coefficient >0.45
  • Grade 4 very Uneven, dull gloss, obvious vapor marks, oxide residue > 0.1g/m 2 , friction coefficient > 0.5.
  • the preparation method of oriented silicon steel without a bottom layer can be achieved by controlling the thickness of the oxide film, using a specific release agent, using a specific hot-stretching leveling and
  • the high temperature annealing and cooling section process can solve the defects such as poor surface uniformity, poor finish, low yield, and deteriorating magnetic properties of the non-substrate oriented silicon steel, so as to obtain uniform surface, excellent smoothness, good magnetic properties, low oxide residue, no oxide residue.
  • the oriented silicon steel without bottom layer has a pass rate of more than 90%, as shown in Table 6.

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Abstract

本公开属于硅钢制备技术领域，具体涉及一种无底层取向硅钢的制备方法。在所述脱碳退火的过程中，带钢表层的氧化膜厚度为1.5～2.5μm；所述氧化膜中Si元素和Fe元素的原子重量比满足：Si/(Si+Fe)≥0.76；所述高温退火的过程中，冷却段依次包括：在温度为1200～500℃时，罩内冷却；其中，保护气体为包括有氮气和氢气的混合气体，所述混合气体中氢气的体积百分比＞3％；在温度为500～200℃时，罩内冷却；其中，保护气体为氮气；在温度＜200℃时，揭开内罩进行空气冷却。根据本公开实施例的无底层取向硅钢的制备方法中，通过控制带钢在脱碳退火阶段的氧化膜厚度以及高温退火的冷却段等一些工艺，从而得到了表面光洁化好、表面均质化好、成材率高、磁性能优良的无底层取向硅钢。

Description

一种无底层取向硅钢的制备方法及其产品
相关申请的交叉引用
本申请要求于2020年12月17日提交、申请号为202011495799.8且名称为“一种无底层取向硅钢的制备方法及其产品”的中国专利申请的优先权，其全部内容通过引用合并于此。
技术领域
本公开属于硅钢制备技术领域，具体涉及一种无底层取向硅钢的制备方法及其产品。
背景技术
在传统的取向硅钢制造工艺中，带钢在冷轧后需要进行脱碳退火处理，会在带钢表面形成一层氧化膜(由SiO 2和Fe 2SiO 4组成)，然后进行渗氮。在渗氮的过程中，N元素经过氧化膜渗入带钢表层。然后在该带钢表面涂覆一层MgO隔离剂。当带钢进入高温退火阶段，其面形成的氧化膜与MgO会发生反应生成硅酸镁底层。该硅酸镁底层可以起到增加带钢表面的层间电阻，并提供表面张力以改善带钢的磁性能作用。但是，这种底层会造成传统取向硅钢的冲片性能差。另外，这种底层在带钢表层生成的氧化物对磁畴移动会造成阻碍，对铁损有一定的恶化作用。
目前，无底层取向硅钢是取向硅钢发展的一个重要方向，其兼具了取向硅钢优异的导磁性和无取向优良的加工性，在高能效电机、发电机制造领域中具有广阔应用前景。另外，无底层硅钢表面经光洁化后可以进一步提升取向硅钢磁性能水平。
然而，当前无底层取向硅钢的主要问题在于：(1)无底层取向硅钢的表面光洁化困难；(2)无底层取向硅钢易产生磁性能不稳定的缺陷；(3)无底层取向硅钢的生产过程中，由于大钢卷生产温度和气氛的差异，难以控制带钢表面和磁性能的均质化；(4)无底层取向硅钢的成材率低。
因此，亟需开发一种无底层取向硅钢的制备方法，以解决无底层取向 硅钢的表面光洁化和均质化的问题。
发明内容
鉴于上述问题，本公开提供一种无底层取向硅钢的制备方法及其产品。根据本公开内容的一些实施方式的无底层取向硅钢的制备方法中，通过控制带钢在脱碳退火阶段的氧化膜厚度以及高温退火的冷却段等一些工艺，从而得到了表面光洁化好、表面均质化好、成材率高、磁性能优良的无底层取向硅钢。
本公开用于实现上述目的的技术方案如下：
本公开的一个方面，提供了一种无底层取向硅钢的制备方法，包括：冶炼、连铸、铸坯加热、热轧、常化、冷轧、脱碳退火、渗氮、涂覆隔离剂、高温退火、热拉伸平整和涂层；其中：
所述脱碳退火的过程中，带钢表层的氧化膜厚度为1.5～2.5μm；所述氧化膜中Si元素和Fe元素的原子重量比满足：Si/(Si+Fe)≥0.76；
所述高温退火的过程中，冷却段依次包括：
在温度为1200～500℃时，罩内冷却；其中，保护气体为包括有氮气和氢气的混合气体，所述混合气体中氢气的体积百分比＞3％；
在温度为500～200℃时，罩内冷却；其中，保护气体为氮气；
在温度＜200℃时，揭开内罩进行空气冷却。
根据本公开的一些实施方案，在本公开所述的无底层取向硅钢的制备方法中，所述铸坯加热的过程中，所述加热温度为1150℃。
根据在本公开的一些实施方案，在本公开所述的无底层取向硅钢的制备方法中，所述带钢表层的氧化膜厚度为1.5～2.5μm，包括：
所述带钢表层的氧化膜厚度为1.9～2.3μm。
根据本公开的一些实施方案，在本公开所述的无底层取向硅钢的制备方法中，所述涂覆隔离剂的过程中，所述隔离剂包含：组分A、组分B、组分C和组分D；
其中，所述组分A为MgO，或者所述组分A为包含MgO和Al 2O 3的混合物；
所述组分B选自NaCl、KCl、MgCl 2、ZnCl 2、BaCl 2、SrCl 2、MnCl 2、CaCl 2、BiOCl、SbOCl、Bi(NO 3) 2、Cu(NO 3) 2、NaNO 3、NO 3NH 4中的一种或两种以上；
所述组分C为熔点≤820℃的低熔点化合物；
所述组分D为CaO或Ca(OH) 2。
根据在本公开的一些实施方案，在本公开所述的无底层取向硅钢的制备方法中，所述包含MgO和Al 2O 3的混合物中：所述Al 2O 3的质量分数≤60％，粒度≥10μm的颗粒的体积百分比为30～60％。
根据在本公开的一些实施方案，在本公开所述的无底层取向硅钢的制备方法中，所述包含MgO和Al 2O 3的混合物中，所述MgO和所述Al 2O 3的质量比例为90:5。
根据在本公开的一些实施方案，在本公开所述的无底层取向硅钢的制备方法中，所述MgO的柠檬酸活度为200～2000S；
所述Al 2O 3的比表面积为15～50m 2/g。
根据在本公开的一些实施方案，在本公开所述的无底层取向硅钢的制备方法中，所述熔点≤820℃的低熔点化合物选自氧化硼、碳酸钠、硼砂、氧化锑中的一种或两种以上。
根据本公开的一些实施方案，在本公开所述的无底层取向硅钢的制备方法中，所述熔点≤820℃的低熔点化合物为氧化硼或氧化锑。
根据本公开的一些实施方案，在本公开所述的无底层取向硅钢的制备方法中，所述隔离剂中，所述组分A、所述组分B、所述组分C和所述组分D的质量比例为100:(0.5～6):(0.6～3):(0.6～5.3)。
根据本公开的一些实施方案，在本公开所述的无底层取向硅钢的制备方法中，按质量分数计，所述隔离剂还包含NH 4Cl；
所述隔离剂中，所述组分A与所述NH 4Cl的质量比为100:(1～2.1)。
根据本公开的一些实施方案，在本公开所述的无底层取向硅钢的制备方法中，所述隔离剂包含：组分A、组分B、组分C、组分D和NH 4Cl；
所述隔离剂中，所述组分A、所述组分B、所述组分C、所述组分D和NH 4Cl的质量比例为100:3:2:5:1.9。
根据本公开的一些实施方案，在本公开所述的无底层取向硅钢的制备 方法中，所述组分A为包含MgO和Al 2O 3的混合物；
所述组分B为MgCl 2；
所述组分C为氧化锑；
所述组分D为Ca(OH) 2。
根据在本公开的一些实施方案，在本公开所述的无底层取向硅钢的制备方法中，所述热拉伸平整的过程中，采用四段式清洗工艺，依次包括：
采用水进行清洗；
采用包含质量浓度为1％～10％的硫酸和质量浓度为1％～5％的硝酸的混合溶液进行酸洗；其中，酸洗温度为50～80℃；
采用包含水和Fe离子络合剂的混合物进行清洗；其中，所述混合物中，所述Fe离子络合剂的质量浓度为0.5～5％；
采用水进行清洗。
根据在本公开的一些实施方案，在本公开所述的无底层取向硅钢的制备方法中，所述脱碳退火的过程中，露点为38～58℃；加热温度为800～850℃。
根据在本公开的一些实施方案，在本公开所述的无底层取向硅钢的制备方法中，所述Fe离子络合剂可以是柠檬酸铵。该技术方案中，所述柠檬酸铵可以进一步防止带钢表面残余的Fe离子发生氧化，从而获得良好表面。
根据在本公开的一些实施方案，在本公开所述的无底层取向硅钢的制备方法中，按质量百分比计，所述铸坯包含：C 0.05～0.09％、Si 2.9～4.6％、Mn 0.05～0.20％、S 0.005～0.020％、Als 0.0225～0.0325％、N 0.0045～0.0145％、Sn 0.01～0.30％、Sb 0.002～0.15％、Cr 0.01～0.5％、Cu 0.01～0.8％，其余为Fe和不可避免的杂质元素。
根据在本公开的一些实施方案，在本公开所述的无底层取向硅钢的制备方法中，按质量百分比计，所述铸坯包含：C 0.06～0.07％、Si 3.2～3.5％、Mn 0.16～0.17％、S 0.015～0.019％、Als 0.028～0.030％、N 0.012～0.013％、Sn 0.10～0.20％、Sb 0.09～0.11％、Cr 0.3～0.4％、Cu 0.1～0.3％，其余为Fe和不可避免的杂质元素。
本公开的另一个方面，还提供了一种本公开所述的无底层取向硅钢的制备方法得到的无底层取向硅钢。
根据本公开的一些实施方案，在本公开所述的无底层取向硅钢的制备方法得到的无底层取向硅钢，厚度可以为0.18mm、0.20mm、0.23mm、0.27mm、0.30mm、0.35mm。
本公开所述的一个或多个技术实施方式，至少具有如下技术效果或优点：
(1)本公开提供的无底层取向硅钢的制备方法中，通过控制带钢在脱碳退火阶段的氧化膜厚度以及高温退火冷却段工艺，能够得到表面光洁性好、表面均质化好、成材率高、磁性能优良的无底层取向硅钢。
(2)本公开提供的无底层取向硅钢的制备方法中，针对公开目的，经过大量优化平衡试验，选择了所述隔离剂的特定成分及其含量，并配以一系列特定工艺参数，所得到的无底层取向硅钢的表面形成状态均匀、光亮，并且氧化物残留度小、无明显汽痕以及摩擦系数小。
(3)本公开提供的无底层取向硅钢的制备方法中，通过控制带钢在脱碳退火阶段的氧化膜厚度以及高温退火冷却段工艺，并同时优化热拉伸平整工艺，选择四段式清洗工艺，可以更好地解决无底层取向硅钢表面均匀度不良、光洁度差、成材率低、磁性能恶化等缺陷，从而获得表面均匀、光洁度优异、磁性能良好的无底层取向硅钢，合格率达到90％以上。
具体实施方式
下文将结合具体实施方式和实施例，具体阐述本公开，本公开的优点和各种效果将由此更加清楚地呈现。本领域技术人员应理解，这些具体实施方式和实施例是用于说明本公开，而非限制本公开。
在整个说明书中，除非另有特别说明，本文使用的术语应理解为如本领域中通常所使用的含义。因此，除非另有定义，本文使用的所有技术和科学术语具有与本公开所属领域技术人员的一般理解相同的含义。若存在矛盾，本说明书优先。
除非另有特别说明，本公开中用到的各种原材料、试剂、仪器和设备等，均可通过市场购买得到或者可通过现有方法制备得到。
本公开一些实施例提供的技术方案为解决上述技术问题，总体思路如 下：
在本公开的一个方面，提供了一种无底层取向硅钢的制备方法，可包括：冶炼、连铸、铸坯加热、热轧、常化、冷轧、脱碳退火、渗氮、涂覆隔离剂、高温退火、热拉伸平整和涂层；其中：
所述脱碳退火的过程中，带钢表层的氧化膜厚度可为1.5～2.5μm；所述氧化膜中Si元素和Fe元素的原子重量比满足：Si/(Si+Fe)≥0.76；
所述高温退火的过程中，冷却段可依次包括：
在温度为1200～500℃时，罩内冷却；其中，保护气体可为包括有氮气和氢气的混合气体，所述混合气体中氢气的体积百分比＞3％；
在温度为500～200℃时，罩内冷却；其中，保护气体可为氮气；
在温度＜200℃时，揭开内罩进行空气冷却。
根据本公开的一些实施方式的无底层取向硅钢的制备方法，通过控制带钢在脱碳退火阶段的氧化膜厚度，以获得低活性的致密性氧化膜来阻制镁铝尖晶石的生成，并防止氧化膜中大量的铁系氧化物所还原的铁元素附在带钢表面而导致最终产品的表面粗糙。此外，还通过控制带钢在高温退火冷却段的工艺参数，从而得到表面光洁化好、表面均质化好、成材率高、磁性能优良的无底层取向硅钢。
根据本公开的一些实施例，在本公开所述的无底层取向硅钢的制备方法中，所述铸坯加热的过程中，所述加热温度可为1150℃。
根据本公开的一些实施方式的无底层取向硅钢的制备方法，发明人针对铸坯加热温度进行了大量研究，最终选择最适宜的加热温度为1150℃，使得所制得的无底层取向硅钢的成材率较高。
根据本公开的一些实施例，在本公开所述的无底层取向硅钢的制备方法中，所述带钢表层的氧化膜厚度可为1.5～2.5μm，包括：
所述带钢表层的氧化膜厚度为1.9～2.3μm。
根据本公开的一些实施方式的无底层取向硅钢的制备方法，发明人还针对带钢表层的氧化膜厚度的优选方案(氧化膜厚度为1.9～2.3μm)进行了大量研究，从而极大地促进最终产品的表面质量。
根据本公开的一些实施例，在本公开所述的无底层取向硅钢的制备方 法中，所述涂覆隔离剂的过程中，所述隔离剂可包含：组分A、组分B、组分C和组分D；
其中，所述组分A可为MgO，或者所述组分A可为包含MgO和Al 2O 3的混合物；
所述组分B可选自NaCl、KCl、MgCl 2、ZnCl 2、BaCl 2、SrCl 2、MnCl 2、CaCl 2、BiOCl、SbOCl、Bi(NO 3) 2、Cu(NO 3) 2、NaNO 3、NO 3NH 4中的一种或两种以上；
所述组分C可为熔点≤820℃的低熔点化合物；
所述组分D可为CaO或Ca(OH) 2。
根据本公开的一些实施方式的无底层取向硅钢的制备方法，发明人经过大量优化平衡试验，选择了所述隔离剂的特定成分及其含量，并配以一系列工艺参数，所得到的无底层取向硅钢的表面形成状态均匀、光亮，并且氧化物残留度小、无明显汽痕以及摩擦系数小。
根据本公开的一些实施例，在本公开所述的无底层取向硅钢的制备方法中，所述包含MgO和Al 2O 3的混合物中，所述MgO和所述Al 2O 3的质量比例可为90:5。
根据本公开的一些实施方式的无底层取向硅钢的制备方法，发明人经过大量优化平衡试验，选择了所述包含MgO和Al 2O 3的混合物中，所述MgO和所述Al 2O 3的质量比例为90:5，进一步提高了带钢表面的光洁性和均匀性。
根据本公开的一些实施例，在本公开所述的无底层取向硅钢的制备方法中，所述MgO的柠檬酸活度可为200～2000S；
所述隔离剂中，粒度≥10μm的颗粒的体积百分比为30～60％；
所述Al 2O 3的比表面积为15～50m 2/g。
本发明人经过大量研究，上述技术方案在实现了本公开目的的基础上，还能够更为有效地控制MgO的反应活性，避免其与氧化膜反应过快而导致带钢表面均匀性欠佳。此外，还通过添加CaO或Ca(OH) 2，改善了所述隔离剂的浆液附着性，以更有效地避免由于涂覆不均而造成的表面质量不均匀的缺陷。在一些实施方式中，本公开还限定了隔离剂中的颗粒粒度以减少水化率，同时提升高温退火层间的透气性，更好地避免由于水汽释放不均匀所导致的 带钢表面水汽印的缺陷。
根据本公开的一些实施例，在本公开所述的无底层取向硅钢的制备方法中，所述熔点≤820℃的低熔点化合物可选自氧化硼、碳酸钠、硼砂、氧化锑中的一种或两种以上。
根据本公开的一些实施例，在本公开所述的无底层取向硅钢的制备方法中，所述熔点≤820℃的低熔点化合物可为氧化硼或氧化锑。
发明人考虑到，高温退火中MgO与氧化膜SiO 2反应生成Mg 2SiO 4底层属于固相反应，而熔点≤820℃的低熔点化合物可在高温退火中产生液相，促进进传质过程而加速底层的形成速度和疏松度，在后续工艺中更易去除。同时，熔点≤820℃的低熔点化合物可有利于提升钢材表面的均匀性，并对钢材表层的抑制剂分解有一定的控制作用，从而有利于稳定钢材磁性能。
根据在本公开的一些实施例，在本公开所述的无底层取向硅钢的制备方法中，所述隔离剂中，所述组分A、所述组分B、所述组分C和所述组分D的质量比例可为100:(0.5～6):(0.6～3):(0.6～5.3)。
根据本公开的一些实施方式的无底层取向硅钢的制备方法，针对公开目的，发明人优化了所述隔离剂的特定成分及其含量，极大地促进无底层取向硅钢的表面光洁化、磁性能的均质化，并使得无底层取向硅钢的磁性能更稳定。
根据本公开的一些实施例，在本公开所述的无底层取向硅钢的制备方法中，按质量分数计，所述隔离剂可还包含NH 4Cl；
所述隔离剂中，所述组分A与所述NH 4Cl的质量比可为100:(1～2.1)。
发明人通过大量研究，考虑到NH 4Cl高温分解会释放NH 3气体，可对带钢表层渗氮的Si 3N 4的分解起到一定的抑制作用，进而增强了防止抑制剂过快的分解造成钢材磁性能不稳定的效果。
根据本公开的一些实施例，在本公开所述的无底层取向硅钢的制备方法中，所述隔离剂可包含：组分A、组分B、组分C、组分D和NH 4Cl；
所述隔离剂中，所述组分A、所述组分B、所述组分C、所述组分D和NH 4Cl的质量比例可为100:3:2:5:1.9。
发明人进一步优化了所述隔离剂的特定成分含量比例，在显著提高无 底层取向硅钢的成材率的基础上，还极大地促进了表面光洁性、表面均质性、磁性能。
根据本公开的一些实施例，在本公开所述的无底层取向硅钢的制备方法中，所述组分A可为包含MgO和Al 2O 3的混合物；
所述组分B可为MgCl 2；
所述组分C可为氧化锑；
所述组分D可为Ca(OH) 2。
本公开通过选择特定的隔离剂成分，更有利于实现本公开的技术效果，最终产品均匀、光亮，氧化物残留度≤0.03g/m 2，无明显汽痕，摩擦系数＜0.25。
根据本公开的一些实施例，在本公开所述的无底层取向硅钢的制备方法中，所述热拉伸平整的过程中，采用四段式清洗工艺，可依次包括：
采用水进行清洗；
采用包含质量浓度为1％～10％的硫酸和质量浓度为1％～5％的硝酸的混合溶液进行酸洗；其中，酸洗温度可为50～80℃；
采用包含水和Fe离子络合剂的混合物进行清洗；其中，所述混合物中，所述Fe离子络合剂的质量浓度可为0.5～5％；
采用水进行清洗。
根据本公开的一些实施方式的无底层取向硅钢的制备方法，在所述热拉伸平整的过程中，采用四段式清洗工艺，通过添加一定量的硝酸以除去高温退火冷却阶段所残留的铁以及铁氧化物，同时进一步降低了带钢表面的粗糙度，更有利于获得光洁的表面。此外在清洗工艺中采用包含水和Fe离子络合剂的混合物进行漂洗，更有利于除去酸洗后在带钢表面残留的铁离子，避免了带钢在清洗段结束后因表面铁离子的残存所造成的二次氧化而使得带钢表面发黄的缺陷。
根据本公开的一些实施例，在本公开所述的无底层取向硅钢的制备方法中，所述脱碳退火的过程中，露点可为38～58℃；加热温度可为800～850℃。
本公开中，为了更好地实现本公开目的，控制脱碳退火过程中的露点和加热温度，既可以保证脱碳效果，也能确保实现本公开所述氧化膜的目标 厚度，同时还可以获得表面较致密的SiO 2层，从而能够控制高温退火过程中硅酸镁生成反应速度的均匀性。
根据本公开的一些实施例，在本公开所述的无底层取向硅钢的制备方法中，按质量百分比计，所述铸坯可包含：C 0.05～0.09％、Si 2.9～4.6％、Mn 0.05～0.20％、S 0.005～0.020％、Als 0.0225～0.0325％、N 0.0045～0.0145％、Sn 0.01～0.30％、Sb 0.002～0.15％、Cr 0.01～0.5％、Cu 0.01～0.8％，其余可为Fe和不可避免的杂质元素。
根据本公开的一些实施例，在本公开所述的无底层取向硅钢的制备方法中，按质量百分比计，所述铸坯可包含：C 0.06～0.07％、Si 3.2～3.5％、Mn 0.16～0.17％、S 0.015～0.019％、Als 0.028～0.030％、N 0.012～0.013％、Sn 0.10～0.20％、Sb 0.09～0.11％、Cr 0.3～0.4％、Cu 0.1～0.3％，其余可为Fe和不可避免的杂质元素。
发明人为了更好地实现本公开的技术效果，选择并优化了铸坯的化学元素及其含量，从而获得了表面更加均匀、光亮度更好、摩擦系数更低、合格率更高、磁性能更优的无底层取向硅钢。
下面将结合实施例、对比例及实验数据对本申请所述无底层取向硅钢的制备方法进行详细说明。
实施例：
本实施例采用8个试验组。在试验组1～8中，采用本公开一些实施例的无底层取向硅钢的制备方法，可包括：冶炼、连铸、铸坯加热、热轧、常化、冷轧、脱碳退火、渗氮、涂覆隔离剂、高温退火、热拉伸平整和涂层。
在一些实施方式中，将冶炼、连铸得到的铸坯经加热保温后热轧成热轧板，然后经过常化、二十辊冷轧至冷轧板；将该冷轧板进行脱碳退火、渗氮、涂覆隔离剂、干燥后进行高温退火、热拉伸平整并涂层得到成品。在一些实施方式中：
铸坯加热阶段：所述加热温度可为1150℃；
脱碳退火阶段：带钢表层的氧化膜厚度可为1.5～2.5μm；所述氧化膜中Si元素和Fe元素的原子重量比满足：Si/(Si+Fe)≥0.76；所述脱碳退火的过 程中，露点可为38～58℃；加热温度可为800～850℃；
涂覆隔离剂阶段：所述隔离剂可包含：组分A、组分B、组分C、组分D和NH 4Cl。
在一些实施方式中，所述组分A可为MgO，或者所述组分A可为包含MgO和Al 2O 3的混合物；所述包含MgO和Al 2O 3的混合物中，所述Al 2O 3的质量分数≤60％，粒度≥10μm的颗粒的体积百分比可为30～60％；所述MgO的柠檬酸活度可为200～2000S；所述Al 2O 3的比表面积可为15～50m 2/g；
所述组分B可选自NaCl、KCl、MgCl 2、ZnCl 2、BaCl 2、SrCl 2、MnCl 2、CaCl 2、BiOCl、SbOCl、Bi(NO 3) 2、Cu(NO 3) 2、NaNO 3、NO 3NH 4中的一种或两种以上；
所述组分C可为熔点≤820℃的低熔点化合物，所述熔点≤820℃的低熔点化合物可选自氧化硼、碳酸钠、硼砂、氧化锑中的一种或两种以上；
所述组分D可为CaO或Ca(OH) 2；
所述隔离剂中，所述组分A、所述组分B、所述组分C和所述组分D的质量比例可为100:(0.5～6):(0.6～3):(0.6～5.3):(1～2.1)；
所述隔离剂还可包含NH 4Cl，所述组分A与所述NH 4Cl的质量比可为100:(1～2.1)。
高温退火阶段：
冷却段依次可包括：
(1)在温度为1200～500℃时，罩内冷却；其中，保护气体可为包括有氮气和氢气的混合气体，所述混合气体中氢气的体积百分比＞3％；
(2)在温度为500～200℃时，罩内冷却；其中，保护气体可为氮气；
(3)在温度＜200℃时，揭开内罩进行空气冷却。
热拉伸平整阶段：
采用四段式清洗工艺，可依次包括：
(1)采用水进行清洗；
(2)采用包含质量浓度为1％～10％的硫酸和质量浓度为1％～5％的硝酸的混合溶液进行酸洗；其中，酸洗温度可为50～80℃；
(3)采用包含水和柠檬酸铵的混合物进行清洗；其中，所述混合物中， 所述柠檬酸铵的质量浓度可为0.5～5％；
(4)采用水进行清洗。
在一些实施方式中，按质量百分比计，所述铸坯可包含：C0.05～0.09％、Si 2.9～4.6％、Mn 0.05～0.20％、S 0.005～0.020％、Als0.0225～0.0325％、N 0.0045～0.0145％、Sn 0.01～0.30％、Sb 0.002～0.15％、Cr 0.01～0.5％、Cu 0.01～0.8％，其余可为Fe和不可避免的杂质元素。
本实施例中8个试验组的具体工艺参数如表1和表2所示：
表1：根据本公开一些实施例的工艺参数
Figure PCTCN2021129607-appb-000001
表2：根据本公开一些实施例的隔离剂的成分及其质量份数
Figure PCTCN2021129607-appb-000002
Figure PCTCN2021129607-appb-000003
其中，按质量百分比计，所述铸坯包含的化学成分如表3所示；
表3：根据本公开一些实施例的铸坯化学成分
Figure PCTCN2021129607-appb-000004
对比例：
本对比例采用8个对比组，在对比组1～8中，采用本公开实施例8个试验组中的相关步骤制备取向硅钢，不同之处在于：氧化膜厚度不同，采用的隔离剂不同，以及是否采用热拉伸平整、高温退火冷却段工艺不同。
表4：对比组提供的工艺参数
Figure PCTCN2021129607-appb-000005
Figure PCTCN2021129607-appb-000006
表5：对比组提供的隔离剂的成分及其质量份数
Figure PCTCN2021129607-appb-000007
针对上述实施例和对比例中所制备得到的取向硅钢分别进行性能测试，其比较结果见表6：
表6：实施例和对比例中所制备得到的取向硅钢分别进行性能测试
Figure PCTCN2021129607-appb-000008
注：1级：均匀、光亮、极好，氧化物残留度≤0.03g/m 2，无明显汽痕，摩擦系数＜0.25；2级：均匀、光亮、较好，氧化物残留度≤0.05g/m 2，边部局部轻微汽痕，摩擦系数＜0.35；3级：较均匀、局部有汽痕、光泽晦暗，氧化物残留度≤0.07g/m 2，摩擦系数＞0.45；4级：非常不均匀、光泽晦暗、汽痕明显、氧化物残留度＞0.1g/m 2，摩擦系数＞0.5。
通过本公开上述实施例与对比例的对比可以看出：根据本公开一些实施方式的无底层取向硅钢的制备方法，通过控制氧化膜厚度、采用特定的隔离剂、采用特定的热拉伸平整和高温退火冷却段工艺，可以解决无底层取向硅钢表面均匀度不良、光洁度差、成材率低、磁性能恶化等缺陷，从而获得 了表面均匀、光洁度优异、磁性能良好、氧化物残留度小、无明显汽痕、摩擦系数小的无底层取向硅钢，合格率达到90％以上，如表6所示。
最后，还需要说明的是，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。
尽管已描述了本公开的优选实施例，但本领域内的技术人员一旦得知了基本创造性概念，则可对这些实施例作出另外的变更和修改。所以，所附权利要求意欲解释为包括优选实施例以及落入本公开范围的所有变更和修改。
显然，本领域的技术人员可以对本公开进行各种改动和变型而不脱离本公开的精神和范围。这样，倘若本公开的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包含这些改动和变型在内。

Claims (10)

  1. 一种无底层取向硅钢的制备方法，包括：冶炼、连铸、铸坯加热、热轧、常化、冷轧、脱碳退火、渗氮、涂覆隔离剂、高温退火、热拉伸平整和涂层；
    所述脱碳退火的过程中，带钢表层的氧化膜厚度为1.5～2.5μm；所述氧化膜中Si元素和Fe元素的原子重量比满足：Si/(Si+Fe)≥0.76；
    所述高温退火的过程中，冷却段依次包括：
    在温度为1200～500℃时，罩内冷却；其中，保护气体为包括有氮气和氢气的混合气体，所述混合气体中氢气的体积百分比＞3％；
    在温度为500～200℃时，罩内冷却；其中，保护气体为氮气；
    在温度＜200℃时，揭开内罩进行空气冷却。
  2. 根据权利要求1所述的无底层取向硅钢的制备方法，其中，所述涂覆隔离剂的过程中，所述隔离剂包含：组分A、组分B、组分C和组分D；
    其中，所述组分A为MgO，或者所述组分A为包含MgO和Al 2O 3的混合物；
    所述组分B选自NaCl、KCl、MgCl 2、ZnCl 2、BaCl 2、SrCl 2、MnCl 2、CaCl 2、BiOCl、SbOCl、Bi(NO 3) 2、Cu(NO 3) 2、NaNO 3、NO 3NH 4中的一种或两种以上；
    所述组分C为熔点≤820℃的低熔点化合物；
    所述组分D为CaO或Ca(OH) 2。
  3. 根据权利要求2所述的无底层取向硅钢的制备方法，其中，所述包含MgO和Al 2O 3的混合物中：所述Al 2O 3的质量分数≤60％，粒度≥10μm的颗粒的体积百分比为30～60％。
  4. 根据权利要求2或3所述的无底层取向硅钢的制备方法，其中，所述MgO的柠檬酸活度为200～2000S；
    所述Al 2O 3的比表面积为15～50m 2/g。
  5. 根据权利要求1或2所述的无底层取向硅钢的制备方法，其中，所述熔点≤820℃的低熔点化合物选自氧化硼、碳酸钠、硼砂、氧化锑中的一种或两种以上。
  6. 根据权利要求1或2所述的无底层取向硅钢的制备方法，其中，所述隔离剂中，所述组分A、所述组分B、所述组分C和所述组分D的质量比例为100:(0.5～6):(0.6～3):(0.6～5.3)。
  7. 根据权利要求5所述的无底层取向硅钢的制备方法，其中，按质量分数计，所述隔离剂还包含NH 4Cl；
    所述隔离剂中，所述组分A与所述NH 4Cl的质量比为100:(1～2.1)。
  8. 根据权利要求1或2所述的无底层取向硅钢的制备方法，其中，所述热拉伸平整的过程中，采用四段式清洗工艺，依次包括：
    采用水进行清洗；
    采用包含质量浓度为1％～10％的硫酸和质量浓度为1％～5％的硝酸的混合溶液进行酸洗；其中，酸洗温度为50～80℃；
    采用包含水和Fe离子络合剂的混合物进行清洗；其中，所述混合物中，所述Fe离子络合剂的质量浓度为0.5～5％；
    采用水进行清洗。
  9. 根据权利要求1或2所述的无底层取向硅钢的制备方法，其中，所述脱碳退火的过程中，露点为38～58℃；加热温度为800～850℃。
  10. 根据权利要求1至9中任一项所述的无底层取向硅钢的制备方法得到的无底层取向硅钢。
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JP2023513096A (ja) 2023-03-30
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