WO2022111096A1 - 一种钙钛矿层、钙钛矿层的制作方法、钙钛矿层太阳能电池及钙钛矿层太阳能电池组件 - Google Patents
一种钙钛矿层、钙钛矿层的制作方法、钙钛矿层太阳能电池及钙钛矿层太阳能电池组件 Download PDFInfo
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Images
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the perovskite layer is usually fabricated by a wet chemical method.
- a perovskite precursor solution is generally coated on the substrate, and then the solute is crystallized by drying and other means to form a perovskite layer.
- the present application provides a method for fabricating a perovskite layer.
- the preparation method of the perovskite layer includes: providing a substrate; forming a perovskite seed crystal on the substrate; immersing the perovskite seed crystal in a perovskite solution to grow into a perovskite film; The ore thin film is annealed to form a perovskite layer.
- the perovskite solute can be quickly diffused and transported to the periphery of the perovskite seed crystal, and the perovskite solute consumed by the crystal precipitation around the perovskite seed crystal can be replenished in time. Based on this, on the one hand, due to the timely replenishment of perovskite solutes, the generation of defects such as grain boundaries and pores can be reduced and the density of perovskite films can be improved during the process of growing perovskite films.
- the concentration of the aforementioned perovskite precursor solution is less than or equal to 0.1 mol/L.
- more solvent in the perovskite precursor solution can separate the crystallized perovskite seed crystals to form discretely distributed perovskite seed crystals, so that a discretely distributed perovskite with the above coverage can be formed Mineral Seeds.
- the dispersion degree and coverage of perovskite seed crystals can be adjusted by adjusting the concentration of the perovskite precursor solution.
- the perovskite seed crystal is an organic-inorganic hybrid material
- the annealing temperature for forming the perovskite seed crystal is 60°C to 130°C.
- the high temperature of the annealing treatment can simultaneously volatilize the organic halide. It can be seen that when AX is an organic halide, the excess AX precursor can be easily removed after forming the perovskite seed crystal.
- the defect concentration also changes from the initial concentration to greater than the initial concentration in the direction away from the perovskite seed crystal.
- the second concentration of the concentration changes into a sequential change of the initial concentration, which makes the perovskite seed crystal change more slowly in the process of forming the perovskite film, so that the defects of the first interface formed are reduced, and the direct change is avoided. Mutations that form perovskite films.
- the thickness of the above-mentioned structural transition layer is greater than or equal to 0.5 nm and less than or equal to 5 nm, so that the perovskite seed crystal and the perovskite film form a "slow transition" effect.
- 4 to 11 are schematic diagrams of states of each stage of the method for fabricating the perovskite layer provided by the embodiments of the present application;
- FIG. 12 is a schematic structural diagram of a perovskite layer provided in an embodiment of the application.
- FIG. 13 is a schematic structural diagram of another perovskite layer provided in the embodiment of the present application.
- words such as “first” and “second” are used to distinguish the same or similar items with basically the same function and effect.
- words “first”, “second” and the like do not limit the quantity and execution order, and the words “first”, “second” and the like are not necessarily different.
- the perovskite layer of perovskite battery is mainly fabricated by wet chemical method.
- the main fabrication process of the perovskite layer includes: as shown in Figure 1, whether it is a one-step method or a two-step method, the perovskite precursor solution is pre-coated on the substrate 11 with the electron transport layer 12 to form the perovskite Mine precursor solution layer 13 .
- the solvent in the perovskite precursor solution layer 13 is volatilized, and the solute (perovskite material) is crystallized and precipitated to form a perovskite film .
- the perovskite layer 142 can be formed.
- the concentration of the perovskite solute around it decreases, forming a layer of low-concentration region 131 .
- the perovskite solute concentration is lower than the perovskite solute concentration in the perovskite precursor solution layer 13 .
- the perovskite solute in the perovskite precursor solution layer 13 diffuses and transports to the low-concentration region 131 .
- the solvent in the perovskite precursor solution layer 13 is continuously volatilized.
- the volatilization of the solvent in the perovskite precursor solution layer 13 will increase the concentration difference between the perovskite precursor solution layer 13 and the low concentration region 131 , thereby accelerating the growth of the perovskite seed crystal 141 .
- the solute in the perovskite precursor solution layer 13 is continuously transported to the surface of the perovskite seed crystal 141 , the perovskite seed crystal 141 gradually grows, and finally a layer of perovskite is formed on the electron transport layer 12 Mineral film.
- the embodiment of the present application provides a perovskite layer.
- the perovskite layer can not only completely cover the substrate 21, but also has a high film quality and has fewer defects.
- the fabrication time of the perovskite layer 24 is short, the growth rate is fast, and the work efficiency is high.
- the perovskite layer may be an organic-inorganic hybrid perovskite layer, an inorganic perovskite layer, or an organic perovskite layer.
- the perovskite layer may also be a lead-free perovskite layer or a double perovskite layer.
- the electron transport layer 22 is formed on the substrate 21 .
- the material of the electron transport layer 22 can be any one of SnO 2 , TiO 2 , and [6,6]-phenyl-C61-isomethyl butyrate (PCBM), and is not limited thereto.
- the thickness of the electron transport layer 22 may be 50 nm to 100 nm.
- the preparation process of the electron transport layer 22 may be spin coating, evaporation, etc., and is not limited thereto.
- a perovskite precursor solution is coated on the substrate 21 , and the solvent of the perovskite precursor solution is volatilized to form a perovskite seed crystal intermediate 231 .
- the perovskite seed crystal intermediate 231 is annealed to form the perovskite seed crystal 23 .
- the above-mentioned perovskite seed crystals 23 are distributed on the substrate 21 in a discrete manner. Particles of a plurality of perovskite seed crystals 23 are distributed on the entire substrate 21 , and there is a certain interval between the perovskite seed crystals 23 without overlapping coverage. At this time, the multiple perovskite seed crystals 23 discretely distributed on the substrate 21 serve as multiple growth bases for the growth of the perovskite thin film, and they grow continuously to form a continuous perovskite thin film.
- the discretely distributed perovskite seed crystals 23 can avoid the problem that the perovskite film grains are too small due to the overlapping coverage of the perovskite seed crystals 23, so that a more uniform perovskite can be formed. ore thin film and completely cover the substrate 21 .
- the coverage ratio of the perovskite seed crystal 23 on the substrate 21 may be 10% ⁇ 50%, and the particle size of the perovskite seed crystal 23 may be 10 nm ⁇ 200 nm.
- the perovskite seed crystal 23 with a particle size of 10 nm to 200 nm has a moderate size, which can not only avoid the problem of many internal defects when the grain size of the perovskite seed crystal 23 is too large, but also avoid the perovskite seed crystal. If the grain size of 23 is too small, the subsequent growth of perovskite films is slow.
- the perovskite seed crystals 23 have the above-mentioned particle size
- the coverage ratio is 10% to 50%
- the spacing and number of the perovskite seed crystals 23 distributed on the substrate 21 are appropriate.
- perovskite films with larger grain size and fewer defects such as grain boundaries can be rapidly formed.
- the coverage ratio is too high
- the perovskite seed crystals can be avoided.
- the coverage ratio of the perovskite seed crystal 23 on the substrate 21 may be 10%, 18%, 20%, 25%, 30%, 34%, 40%, 45%, 50%, and the like.
- the particle size of the perovskite seed crystal 23 may be 10 nm, 20 nm, 50 nm, 70 nm, 90 nm, 100 nm, 120 nm, 150 nm, 175 nm, 185 nm, 190 nm, 200 nm, or the like.
- the dispersion degree and coverage of the perovskite seed crystal 23 can be adjusted by adjusting the concentration of the perovskite precursor solution.
- concentration of the perovskite precursor solution the concentration of the perovskite precursor solution, the smaller the coverage of the perovskite seed crystals 23 and the higher the dispersion of the perovskite seed crystals 23 .
- the concentration of the perovskite precursor solution may be 0.1mol/L, 0.09mol/L, 0.08mol/L, 0.07mol/L, 0.06mol/L, 0.05mol/L, 0.04mol/L, 0.03mol /L, 0.02mol/L, 0.01mol/L, etc.
- the concentration of the perovskite precursor solution can be between 0.02 mol/L and 0.05 mol/L.
- the above-mentioned perovskite seed crystal 23 can also be obtained by adjusting the ratio of the perovskite precursor solution.
- the general formula of the perovskite material is ABX3, the perovskite precursor solution includes AX precursor and BX2 precursor, X is a halogen element, and A and B are cations.
- the perovskite material may be an organic-inorganic hybrid material, and the material ratio of the AX precursor and the BX2 precursor may be (2-15):1.
- the perovskite precursor solution used to make the perovskite layer in which the ratio of AX precursor and BX2 precursor is usually 1:1, even if one of the precursors is excessive for passivation defects, AX:BX2 The ratio is also between (0.9 ⁇ 1.1):1.
- the amount of AX precursor substances is relatively large, and after the perovskite precursor solution solvent is volatilized to form the perovskite seed crystal intermediate 231, more AX precursors will remain .
- These excess AX precursors can separate the plurality of perovskite seed intermediates 231, resulting in discrete distribution of perovskite seeds 23 with the coverage described above after annealing.
- the coverage ratio of the perovskite seed crystal 23 can be regulated by adjusting the material ratio of the AX precursor to the BX2 precursor.
- the material ratio of the AX precursor and the BX2 precursor can be (0.95-1.05): 1.
- the coverage rate of the perovskite seed crystal can be adjusted by the concentration of the precursor. .
- the material ratio of the AX precursor and the BX2 precursor may be 2:1, 3:1, 5:1, 7:1, 9:1, 10:1, 11:1, 12.5:1 , 13:1, 13.4:1, 15:1, etc.
- the material ratio of the AX precursor and the BX2 precursor can be (5-10):1.
- the above-mentioned method for coating the perovskite precursor solution may be any one of blade coating, spin coating, drop coating, inkjet, rotogravure coating, spray coating, and roll coating.
- the method of volatilizing the solvent of the perovskite precursor solution can be natural volatilization, drying volatilization, vacuum flash evaporation, or anti-solvent accelerated crystallization, and it is not limited to this, as long as the perovskite can be guaranteed.
- the solvent of the precursor solution can be volatilized.
- the time of the above-mentioned annealing treatment may be 1 min to 30 min.
- the annealing time may be 1 min, 10 min, 12 min, 17 min, 20 min, 25 min, 28 min, 30 min, or the like.
- the grain size of the perovskite seed crystal 23 formed after annealing is moderate.
- the annealing time in this range can also avoid the problem of excessive growth of the perovskite seed crystal 23 caused by the excessively long annealing time, thereby reducing defects in the perovskite seed crystal 23 .
- the temperature of the above annealing treatment can be designed according to the perovskite seed crystal. Since the perovskite seed crystals 23 are dispersed and discontinuous small grains, the annealing temperature for forming the perovskite seed crystals 23 should be 20°C to 50°C lower than the annealing temperature for forming the perovskite thin film. When the perovskite seed crystal is an all-inorganic material, the temperature of the annealing treatment may be 120°C to 220°C. At this time, it can be ensured that less defects are formed in the perovskite seed crystal 23 after the annealing treatment, and stoichiometric mismatch and decomposition of the perovskite seed crystal 23 can be avoided.
- the temperature of the annealing treatment may be 160°C to 200°C.
- the annealing temperature can be 120°C, 130°C, 150°C, 160°C, 170°C, 180°C, 190°C, 200°C, 210°C, 220°C, etc. .
- the temperature of the annealing treatment may be 60°C to 130°C.
- the temperature of the annealing treatment may be 90°C to 110°C.
- the annealing temperature can be 60°C, 70°C, 80°C, 90°C, 95°C, 100°C, 108°C, 110°C, 120°C, 130°C, etc. .
- the perovskite seed crystal 23 is dipped into the perovskite solution 30 .
- the perovskite solution 30 may be prepared by dissolving perovskite materials, or may be a perovskite precursor solution.
- FIG. 8 under the action of the perovskite seed crystal 23 , the perovskite seed crystal 23 grows into a perovskite film; the perovskite film is annealed to form a perovskite layer 24 .
- the perovskite solute can be quickly diffused and transported to the periphery of the perovskite seed crystal 23, and the perovskite solute consumed by the crystal precipitation around the perovskite seed crystal 23 can be replenished in time. Based on this, on the one hand, due to the timely replenishment of perovskite solutes, the generation of defects such as grain boundaries and pores can be reduced and the density of perovskite films can be improved during the process of growing perovskite films.
- the perovskite solute can be quickly transported to the periphery of the perovskite seed crystal 23, it can promote the rapid growth of the perovskite seed crystal 23 and accelerate the growth rate of the perovskite film, thereby improving the production efficiency and saving energy. Production time.
- solubility of perovskite materials there are various ways to reduce the solubility of perovskite materials. For example, reduce the pressure. Another example is cooling. When the solubility of the perovskite material is reduced by cooling, on the one hand, this cooling method is easy to implement and can reduce the difficulty of the process. On the other hand, the process of reducing the solubility of perovskite materials can be easily regulated by adjusting the temperature, so that the process of reducing the solubility of perovskite materials has greater controllability.
- the cooling rate of cooling is positively correlated with the rate at which the solubility of the perovskite material in the perovskite solution 30 decreases, and the rate at which the solubility of the perovskite material decreases is positively correlated with the growth rate of the perovskite film.
- the cooling rate of the above cooling may be 0.1°C/h to 10°C/h.
- the rate at which the solubility of the perovskite material decreases is appropriate, which can speed up the growth rate of the perovskite film while ensuring the quality of the perovskite film. Not only can the problem of excessive defects caused by too fast perovskite crystal growth be avoided, but also the problem of low production efficiency caused by too slow growth of perovskite crystals.
- the cooling rate of cooling can be 0.1°C/h, 0.5°C/h, 1°C/h, 3°C/h, 4.5°C/h, 5°C/h, 6.2°C/h, 7°C/h, 8.2°C/h, 9°C/h, 10°C/h, etc.
- the initial temperature of the perovskite solution 30 may be 100°C to 150°C.
- the initial temperature of the perovskite solution 30 may be 100°C, 110°C, 121°C, 135°C, 146°C, 150°C, 160°C, 180°C, 192°C, 200°C, and the like.
- the initial temperature of the perovskite solution 30 is relatively high, which facilitates the cooling operation, and the cooling cost is relatively low.
- the substrate 21 Before immersing the substrate 21 with the perovskite seed crystals 23 into the perovskite solution 30, in order to keep the initial temperature of the entire system constant, the substrate 21 can also be preheated to the initial temperature.
- the solvent when preparing the perovskite solution 30, the solvent can be heated to the initial temperature, and then the perovskite solute can be added under stirring.
- the solvent of the perovskite solution 30 can be N,N-dimethylformamide (DMF, the boiling point is 153°C), dimethyl sulfoxide (DMSO, the boiling point is 189°C), N-methylpyrrolidone (NMP, the boiling point is 189°C)
- DMF N,N-dimethylformamide
- DMSO dimethyl sulfoxide
- NMP N-methylpyrrolidone
- the perovskite material can also be increased by accelerating solvent volatilization in the process of growing the perovskite seed crystal 23 into the perovskite film. saturation.
- the perovskite solute in the perovskite solution 30 can be brought closer to or in a saturated state, thereby reducing grain boundaries, pores, etc. during the growth of the perovskite seed crystal 23 into a perovskite film.
- the generation of defects improves the density and growth rate of perovskite films.
- the evaporation of the solvent can be accelerated by heating.
- the speed of solvent volatilization can be easily regulated by controlling the heating temperature, and then the growth rate of the perovskite film can be regulated.
- the initial temperature of the perovskite solution 30 may be 20°C to 30°C; in the process of growing the perovskite seed crystal 23 into a perovskite film, the heating temperature may be 40°C to 100°C. Preferably, the heating temperature may be 50°C to 70°C. At this time, the initial temperature of the perovskite solution 30 is low, so that the perovskite solution 30 can be easily prepared and the cost is low when the perovskite solution 30 is heated to a higher temperature. Moreover, the temperature difference between the heating temperature and the initial temperature is suitable, which can speed up the growth rate of the perovskite film and ensure the quality of the perovskite film.
- the initial temperature of the perovskite solution 30 may be 20°C, 21.5°C, 22°C, 23°C, 24.5°C, 25.1°C, 26°C, 27°C, 28°C, 29°C, 30°C, and the like.
- the heating temperature may be 40°C, 50°C, 60°C, 70°C, 80°C, 90°C, 100°C, or the like.
- the perovskite solution 30 can be configured at room temperature. After the substrate 21 with the perovskite seed crystals 23 is immersed in the perovskite solution 30, the perovskite solution 30 can be heated to accelerate the volatilization of the solvent.
- the perovskite solution 30 used in the above-mentioned growth of the perovskite thin film may be an unsaturated solution or a saturated solution.
- a saturated solution to grow the perovskite film
- the perovskite solution 30 is a saturated solution, and in the process of growing the perovskite film, the perovskite Solution 30 is always saturated.
- the perovskite solution 30 in a saturated state can make the perovskite material more easily precipitated from the perovskite solution 30, and rapidly precipitate on the surface of the perovskite seed crystal 23 under the action of the perovskite seed crystal 23,
- the perovskite seed crystal 23 is promoted to grow, forming a perovskite film with less defects and high density.
- the perovskite solution 30 When the perovskite solution 30 is a saturated solution, the growth power of the perovskite film comes from the supersaturation of the solution. When the perovskite solution 30 is in a supersaturated state, the solutes in the perovskite solution 30 tend to precipitate out thermodynamically. In the presence of the perovskite seed crystal 23, the perovskite solute will rapidly precipitate on the surface of the perovskite seed crystal 23 under the action of the perovskite seed crystal 23, which promotes the growth of the perovskite seed crystal 23, thereby forming Perovskite thin films.
- the side and back sides of the substrate 21 can be covered before the growth of the perovskite film, or after the growth of the perovskite film, a mixed solvent of acetonitrile and DMF or other polar solvents can be used to wipe and remove.
- the hole transport layer 25 is formed on the perovskite layer 24 .
- the hole transport layer 25 can be made of 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro- OMeTAD), (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine](PTAA), 2,2',7,7'-tetrakis(bis-p-tolylamino) ) Spiro-9,9'-difluorene (Spiro-TTB), etc.
- the process of forming the hole transport layer 25 can be any one of spin coating, spray coating, magnetron sputtering process, thermal evaporation coating process, and not only Limited to this. It should be understood that in the production of the above-mentioned perovskite solar cells, the electron transport layer 22 is first made, and then the perovskite layer 24 and the hole transport layer 25 are made. In some perovskite layers, holes can also be made first. The transport layer 25, and then the perovskite layer 24 and the electron transport layer 22 are fabricated.
- a transparent conductive layer 26 is formed on the hole transport layer 25, and the material of the transparent conductive layer 26 can be tin-doped indium oxide (ITO), zinc-doped indium oxide (IZO), tungsten-doped indium oxide (IWO) ), one or more of titanium-doped indium oxide (ITIO), fluorine-doped tin oxide (FTO), and aluminum-doped zinc oxide (AZO).
- the process of forming the transparent conductive layer 26 may be a magnetron sputtering process, a thermal evaporation process, or the like. It should be understood that in some perovskite layers, the transparent conductive layer 26 may also be omitted.
- electrodes 27 are formed on the transparent conductive layer 26 .
- the material of the electrode 27 may be a metal with good conductivity such as silver and copper.
- the process of fabricating the electrode 27 may be screen printing, evaporation, sputtering, or the like.
- the embodiments of the present application divide the process of forming the perovskite seed crystal 23 and growing the perovskite seed crystal 23 into a perovskite film into two steps.
- the perovskite seed crystal 23 is formed on the substrate 21, and then the perovskite seed crystal 23 is immersed in the perovskite solution 30. Under the action of the perovskite seed crystal 23, the perovskite seed crystal 23 grows into calcium Titanium film.
- the process of forming the perovskite seed crystal 23 can be independently regulated, so that the perovskite seed crystal 23 with larger grain size and distributed on the entire substrate 21 can be formed.
- a perovskite film covering the entire substrate 21 can be grown and the defects of the perovskite film can be reduced.
- the perovskite film is annealed to form a perovskite layer 24 covering the entire substrate 21 and having fewer defects, thereby improving the conversion efficiency of the perovskite layer and reducing the risk of leakage.
- the first step is to provide a clean FTO conductive glass.
- an electron transport layer made of SnO2 with a thickness of 100 nm is formed on the FTO conductive glass by a spin coating process.
- the third step 1032 mg of FAI and 461 mg of PbI2 were dissolved in 20 ml of DMF, and heated and stirred at 60 °C for 2 h to obtain a transparent perovskite precursor solution.
- FAI:PbI2 (molar ratio) 6:1
- the solution concentration is 0.05mol/L.
- the perovskite precursor solution was spin-coated on the electron transport layer at a spin-coating speed of 3000 rpm and a spin-coating time of 30 s. After spin coating, annealed at 100°C for 10min-20min. After the solvent and excess FAI were volatilized, discretely distributed FAPbI3 seed crystals were formed on the electron transport layer.
- the fourth step 50ml of DMF was heated in a beaker and kept at 120°C, and 0.6g of FAPbI3 perovskite was added until it was completely dissolved. After the solution was clarified, 0.6g of FAPbI3 perovskite was added to dissolve again. The above dissolution process was repeated until the perovskite could no longer be dissolved, and the DMF saturated solution of FAPbI3 perovskite was obtained.
- the substrate with perovskite seeds was preheated to 120 °C and then immersed in the above-mentioned 120 °C saturated solution of FAPbI3 perovskite in DMF. After sealing the beaker, it was placed in a precision oven preheated to 120°C. A program was set to cool the saturated perovskite solution to room temperature at a rate of 5 °C/h. The growth thickness of the perovskite film is controlled by the cooling range of the saturated perovskite solution. During the process from 120 °C to room temperature, the amount of perovskite solute precipitated due to the difference in solubility is approximately equal to the amount of perovskite deposited on the electron transport layer. amount of titanium ore.
- the solute in the saturated perovskite solution tends to precipitate out driven by the supersaturation.
- the perovskite seed crystals crystallize on the surface, and the perovskite seed crystals gradually grow to form a complete and high-quality FAPbI3 perovskite film.
- the preparation method of the perovskite layer provided in this embodiment is basically the same as the preparation method of the perovskite layer recorded in the first embodiment, and the difference is only:
- CsI and 461 mg of PbI2 were added to 50 ml of DMF, and stirred at 80 °C for 2 h to obtain a transparent and clear perovskite precursor solution.
- CsI:PbI2 (molar ratio) 1:1, and the perovskite concentration is 0.02mol/L.
- the above perovskite precursor solution was spin-coated on the electron transport layer at a spin-coating speed of 4000 rpm and a spin-coating time of 45 s. After spin-coating, annealing and heating at 160°C for 10-30min yields CsPbI3 seed crystals on the electron transport layer.
- the substrate with CsPbI3 seed crystal is immersed in the above-mentioned saturated solution of ⁇ -butyrolactone of CsPbI3 perovskite, and the beaker is in an open state.
- the whole system was placed in a precise temperature-controlled environment, and heated from room temperature to 70 °C at a heating rate of 10 °C/h and kept for 8-16 h.
- the solvent in the saturated perovskite solution continued to volatilize, and the perovskite seed crystal gradually grow up, and finally get a layer of CsPbI3 perovskite film.
- the preparation method of the perovskite layer provided in this embodiment is basically the same as the preparation method of the perovskite layer recorded in the first embodiment, and the difference is only:
- the present application further provides a perovskite layer, which can be fabricated by the method for fabricating a perovskite layer described in any of the above embodiments, and the perovskite layer includes
- the perovskite seed crystal and the perovskite thin film include a first interface between the perovskite seed crystal and the perovskite thin film, wherein the first interface is an interface that can be observed by a high-resolution scanning electron microscope or an electron microscope. Due to the formation of the first interface between the perovskite seed crystal and the perovskite film, which can be observed by high-resolution scanning electron microscopy or electron microscopy.
- the first interface formed between the perovskite seed crystal and the perovskite thin film is a structural transition layer, wherein the lattice parameter of the structural transition layer is According to the first order, the atomic arrangement of the structural transition layer changes according to the second order.
- the first order is to change from the initial parameter to the second parameter larger than the initial parameter and then to the initial parameter along the direction away from the perovskite seed crystal.
- the second order is the order from ordered to disordered and back to ordered along the direction away from the perovskite seed crystal.
- the defect concentration also changes from the initial concentration to greater than the initial concentration in the direction away from the perovskite seed crystal.
- the second concentration of the concentration changes into a sequential change of the initial concentration, which makes the perovskite seed crystal change more slowly in the process of forming the perovskite film, so that the defects of the first interface formed are reduced, and the direct change is avoided. Mutations that form perovskite films.
- At least one (a) of a, b or c may represent: a, b, c, a combination of a and b, a combination of a and c, a combination of b and c, or a combination of a, b and c Combination, where a, b, c can be single or multiple.
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Abstract
Description
Claims (19)
- 一种钙钛矿层的制作方法,其特征在于,包括:提供一衬底;在所述衬底上形成钙钛矿籽晶;将所述钙钛矿籽晶浸入钙钛矿溶液中以生长成钙钛矿薄膜;对所述钙钛矿薄膜进行退火处理,形成钙钛矿层。
- 根据权利要求1所述的钙钛矿层的制作方法,其特征在于,在所述钙钛矿籽晶生长成钙钛矿薄膜的过程中,采用降低钙钛矿材料在钙钛矿溶液中溶解度的方式,促使钙钛矿材料从钙钛矿溶液中析出并为钙钛矿籽晶生长提供钙钛矿材料。
- 根据权利要求2所述的钙钛矿层的制作方法,其特征在于,采用降温的方式降低钙钛矿材料的溶解度。
- 根据权利要求3所述的钙钛矿层的制作方法,其特征在于,所述降温的降温速度为0.1℃/h~10℃/h;和/或,所述降温前,所述钙钛矿溶液的初始温度为100℃~150℃。
- 根据权利要求1或2所述的钙钛矿层的制作方法,其特征在于,在所述钙钛矿籽晶生长成钙钛矿薄膜的过程中,采用加速溶剂挥发的方式促使钙钛矿材料从钙钛矿溶液中析出,并为钙钛矿籽晶生长提供钙钛矿材料。
- 根据权利要求5所述的钙钛矿层的制作方法,其特征在于,采用加热的方式加速溶剂挥发;所述钙钛矿溶液的初始温度为20℃~30℃;在所述钙钛矿籽晶生长成钙钛矿薄膜的过程中,加热温度为40℃~100℃。
- 根据权利要求1~6任一项所述的钙钛矿层的制作方法,其特征在于, 在所述钙钛矿籽晶浸入钙钛矿溶液时,所述钙钛矿溶液为饱和溶液。
- 根据权利要求1~6任一项所述的钙钛矿太阳能电池的制作方法,其特征在于,所述钙钛矿籽晶以离散分布的方式分布在所述衬底上。
- 根据权利要求8所述的钙钛矿层的制作方法,其特征在于,所述钙钛矿籽晶在所述衬底上的覆盖率为10%~50%,所述钙钛矿籽晶的粒径为10nm~200nm。
- 根据权利要求1~6任一项所述的钙钛矿层的制作方法,其特征在于,在所述衬底上形成钙钛矿籽晶包括:在所述衬底上涂覆钙钛矿前驱溶液,挥发所述钙钛矿前驱溶液的溶剂,形成钙钛矿籽晶中间体;对所述钙钛矿籽晶中间体进行退火处理,形成钙钛矿籽晶。
- 根据权利要求10所述的钙钛矿层的制作方法,其特征在于,所述钙钛矿籽晶的通式为ABX3;所述钙钛矿前驱溶液包括AX前驱体和BX2前驱体,X为卤族元素;所述钙钛矿籽晶为有机无机杂化材料,AX前驱体和BX2前驱体的物质的量比为(2~15):1,或,所述钙钛矿籽晶为全无机材料,AX前驱体和BX2前驱体的物质的量比为(0.95-1.05):1。
- 根据权利要求11所述的钙钛矿层的制作方法,其特征在于,所述钙钛矿前驱溶液的浓度小于或等于0.1mol/L;和/或,形成所述钙钛矿籽晶的退火处理的时间为1min~30min。
- 根据权利要求12所述的钙钛矿层的制作方法,其特征在于,所述钙钛矿籽晶为有机无机杂化材料,形成所述钙钛矿籽晶的退火处理的温度为60℃~130℃;或,所述钙钛矿籽晶为全无机材料,形成所述钙钛矿籽晶的退火处理的温度为120℃~220℃。
- 根据权利要求1所述的钙钛矿层的制作方法,其特征在于,所述钙钛矿籽晶的钙钛矿成分与所述钙钛矿溶液的钙钛矿成分相同。
- 一种钙钛矿层,其特征在于,所述钙钛矿层包括钙钛矿籽晶和钙钛矿薄膜;所述钙钛矿籽晶和所述钙钛矿薄膜之间包括第一界面,其中,所述第一界面可通过高分辨的扫描电子显微镜或者电子显微镜被观察到。
- 根据权利要求15所述的钙钛矿层,其特征在于,所述所述钙钛矿籽晶和所述钙钛矿薄膜之间包括的所述第一界面处还包括结构过渡层,其中,所述结构过渡层的晶格参数按照第一顺序变化,所述结构过渡层的原子排布方式按照第二顺序变化,所述第一顺序为沿远离所述钙钛矿籽晶的方向由初始参数变为大于初始参数的第二参数再变为初始参数的顺序,所述第二顺序为沿远离所述钙钛矿籽晶的方向由有序变为无序再变为有序的顺序。
- 根据权利要求17所述的钙钛矿层,其特征在于,所述结构过渡层的厚度大于或者等于0.5nm,且小于或者等于5nm。
- 一种钙钛矿太阳能电池,其特征在于,所述钙钛矿电池包括权利要求14~16任一项所述的钙钛矿层。
- 一种钙钛矿层太阳能电池组件,其特征在于,所述钙钛矿层太阳能电池组件包括权利要求17所述的钙钛矿太阳能电池。
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CN110854274A (zh) * | 2019-11-22 | 2020-02-28 | 中南大学 | 一种钙钛矿形核过程的调控方法、钙钛矿薄膜基太阳能电池的制备方法 |
US20200335285A1 (en) * | 2019-04-22 | 2020-10-22 | Nazarbayev University Research and Innovation System | Method of preparing perovskite material and solar cell containing it as a light absorber |
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CN112467043A (zh) | 2021-03-09 |
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US20230380197A1 (en) | 2023-11-23 |
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