CN114050189A - 一种具有3d结构的硒硫化锑薄膜太阳电池及其制备方法 - Google Patents
一种具有3d结构的硒硫化锑薄膜太阳电池及其制备方法 Download PDFInfo
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Abstract
本发明涉及一种具有3D结构的硒硫化锑薄膜太阳电池及其制备方法,属于电池制备技术领域。本申请的薄膜太阳电池包括从下至上的依次层叠设置的衬底玻璃、TiO2层、BaTiO3薄膜层、Sb2(S,Se)3薄膜层、空穴传输层和电极层。还包括一种Sb2(S,Se)3薄膜太阳电池的制备方法,制备出的Sb2(S,Se)3薄膜太阳电池其中TiO2层为3D‑TiO2阵列结构,与Sb2(S,Se)3薄膜层形成pn结,BaTiO3薄膜作为钝化层插入到pn结之间,减少异质结在界面处的复合。BaTiO3薄膜层与TiO2层形成双缓冲层结构,增加了耗尽层宽度可以有效提升电池的开路电压。利用BaTiO3自身的铁电性,提高了载流子的分离能力和电池的开路电压。且BaTiO3薄膜厚度较小,基于量子隧穿效应解决了BaTiO3导电性差,导致电池内阻高的问题。
Description
技术领域
本发明涉及一种具有3D结构的硒硫化锑薄膜太阳电池及其制备方法,属于电池制备技术领域。
背景技术
寻找低成本、高效率、高稳定性的光伏材料是太阳能电池研究的一个重要内容。为此,一系列的光伏材料及其相应的器件结构相继出现,比如硅电池、薄膜太阳能电池以及钙钛矿型太阳能电池等等。近年来,硒硫化锑(Sb2(S,Se)3)作为一种薄膜太阳电池吸收层材料被研究,Sb2(S,Se)3为正交结构,物相成分易于控制,且带隙在1.1-1.7eV范围内可调,光吸收系数高达105cm-1以上。而且制备Sb2(S,Se)3薄膜的工艺温度较低,非常适合用于柔性薄膜电池,是一种具有实际应用前景的太阳能电池活性材料。然而,这种制备的Sb2(S,Se)3薄膜太阳电池通常转换效率通常较低、界面复合严重。
发明内容
本发明的目的在于提供一种具有3D结构的硒硫化锑薄膜太阳电池及其制备方法,通过本发明制备得到的Sb2(S,Se)3薄膜太阳电池转换效率高,界面复合降低。
为达到上述目的,提供如下技术方案:一种具有3D结构的硒硫化锑薄膜太阳电池,包括从下至上的依次层叠设置的衬底玻璃、缓冲层、钝化层、吸收层、空穴传输层和电极层;
其中,所述缓冲层为3D-TiO2阵列结构,所述钝化层为BaTiO3薄膜层,吸收层为Sb2(S,Se)3薄膜,缓冲层与吸收层形成pn结。
进一步地,所述BaTiO3薄膜层的厚度范围为2-10nm,所述Sb2(S,Se)3薄膜层的厚度范围为300-2000nm。
进一步地,所述TiO2阵列具有至少两个棒结构,所述棒结构长度为100-1000nm,直径为20-70nm,密度在100-200rod·μm-2。
一种具有3D结构的硒硫化锑薄膜太阳电池的制备方法,用于制备如上所述的具有3D结构的Sb2(S,Se)3薄膜太阳电池,包括以下步骤:
S1、衬底清洗:以衬底玻璃为窗口层,清洗所述衬底玻璃;
S2、制备缓冲层:以含钛化合物与有机醇溶液配置得到前驱体溶液A,将所述前驱体溶液A旋涂在步骤S1中所述的衬底玻璃上,烘干后退火处理得到TiO2种子层薄膜;
用超纯水稀释含钛化合物并混匀,在酸性环境下配置得到前驱体溶液B,在所述前驱体溶液B内加入模板剂或氟钛酸铵,在所述TiO2种子层薄膜采用水热合成法制备3D-TiO2阵列,形成TiO2层;
S3、制备钝化层:以含钛化合物作为钛源,含钡化合物作为钡源,用所述钛源和钡源配制得到前驱体溶液C,在所述TiO2阵列上采用溶液法原位生长BaTiO3薄膜层,并退火;
S4、制备吸收层:以含硫化合物作为硫源,含锑化合物作为锑源,用超纯水溶解酒石酸、所述硫源及锑源配制得到前驱体溶液D,在所述BaTiO3薄膜层上喷涂所述前驱体溶液D制备得到Sb2(S,Se)3薄膜层;
S5、制备空穴传输层:在所述Sb2(S,Se)3薄膜层上制备空穴传输层;
S6、制备电极层:在所述空穴传输层上面蒸镀电极形成电极层。
进一步地,所述步骤S1具体为:依次采用去污粉水、去离子水、丙酮-乙醇混合液、去离子水超声清洗所述衬底玻璃,衬底玻璃为FTO玻璃、ITO玻璃或AZO玻璃中的一种。
进一步地,所述步骤S2中的含钛化合物为钛酸四丁酯、四氯化钛或钛酸异丙酯中的一种或多种,所述步骤S2中的有机醇溶液为乙醇、乙二醇、丙醇或二乙二醇中的一种或多种混合溶液混合配制。
进一步地,所述步骤S2中的模板剂为聚乙烯吡咯烷酮、烷基苯磺酸钠或乙二胺中的一种或多种。
进一步地,所述步骤S3中的含钛化合物为钛酸四丁酯、四氯化钛或钛酸异丙酯中的一种或多种;所述步骤S3中的含钡化合物为氯化钡、氢氧化钡或钛酸钡中的一种或多种。
进一步地,所述步骤S3中的含钡化合物的溶剂为有机醇溶液。
进一步地,所述步骤S4中的含硫化合物为硫脲、硫代乙酰胺、L-半胱氨酸中的一种或两种组合;所述步骤S4中的含锑化合物为乙酸锑、氯化锑或酒石酸锑钾中的一种或多种。
本发明的有益效果在于:本发明的一种具有3D结构的硒硫化锑薄膜太阳电池,TiO2薄膜与Sb2(S,Se)3薄膜具有良好的能带匹配,形成匹配良好的pn结结构,有效降低界面复合;且BaTiO3薄膜与TiO2薄膜形成双缓冲层结构,增加了耗尽层宽度可以有效提升电池的开路电压。其次,利用BaTiO3的铁电性,自发极化形成电场,其压电势可以有效地影响电荷输运,基于压电光电子效应,将有效提高器件的光电性能,进一步分离载流子减少复合。最后,BaTiO3薄膜可以作为钝化界面,进一步降低界面处的载流子复合率;同时BaTiO3薄膜的厚度较小,利用量子隧穿效应,极大的提高了BaTiO3薄膜的导电性。
本发明的一种具有3D结构的硒硫化锑薄膜太阳电池的制备方法,制备得到的Sb2(S,Se)3薄膜太阳电池转换效率高,因转换效率与异质结界面复合有密切关系,异质结界面复合与异质结的晶格失配以及能带失配有关,TiO2薄膜与Sb2(S,Se)3薄膜具有良好的能带匹配,可以形成匹配良好的pn结结构,降低界面复合,提高了电池转换效率。
上述说明仅是本发明技术方案的概述,为了能够更清楚了解本发明的技术手段,并可依照说明书的内容予以实施,以下以本发明的较佳实施例并配合附图详细说明如后。
附图说明
图1为实施例1制备的具有3D结构的Sb2(S,Se)3薄膜太阳电池的层叠示意图;
图2为实施例1中所制备的TiO2的X射线衍射(XRD)图谱;
图3为实施例1中所制备的BaTiO3的X射线衍射(XRD)图谱
图4为实施例1中所制备的Sb2(S,Se)3的X射线衍射(XRD)图谱
图5为实施例1中所制备的Sb2(S,Se)3的拉曼图谱
图6为实施例1中所制备的Sb2(S,Se)3的扫描电子显微镜(SEM)图片;
图7为实施例1和对比例1中所制备的薄膜结构的光电流图谱;
图8为实施例1和对比例1中所制备的电池结构的I-V曲线。
具体实施方式
下面结合附图和实施例,对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明,但不用来限制本发明的范围。
本发明提供一种具有3D结构的硒硫化锑薄膜太阳电池,包括从下至上的依次层叠设置的衬底玻璃、TiO2层、钝化层、Sb2(S,Se)3薄膜层、空穴传输层和电极层。其中,TiO2层为的3D-TiO2阵列结构,与Sb2(S,Se)3薄膜层形成pn结,钝化层为BaTiO3薄膜层,减少异质结的界面复合。
衬底玻璃可以是FTO、ITO、AZO等透明导电玻璃,但不限于此,还可以为其他的衬底玻璃。TiO2层为结构的有序的阵列结构,可形成良好载流子输送路径。BaTiO3薄膜层与Sb2(S,Se)3薄膜层具有良好的能带匹配,可形成匹配良好的pn结结构,有效降低界面复合;且BaTiO3薄膜层与TiO2层形成双缓冲层结构,增加了耗尽层宽度可以有效提升电池的开路电压。其次,利用BaTiO3的铁电性,自发极化形成电场,其压电势可以有效地影响电荷输运,基于压电光电子效应,将有效提高器件的光电性能,进一步分离载流子减少复合。最后,BaTiO3薄膜可以作为钝化界面,进一步降低界面处的载流子复合率;同时BaTiO3薄膜层的厚度较小,利用量子隧穿效应,极大的提高了BaTiO3薄膜的导电性。
需要说明的是,TiO2阵列中的棒结构长度为200-1000nm,直径为20-70nm,密度在100-200rod·μm-2。BaTiO3薄膜层的厚度范围为2-10nm,Sb2(S,Se)3薄膜层的厚度范围为300-2000nm。
本申请还提供一种具有3D结构的硒硫化锑薄膜太阳电池的制备方法用以制备如上的具有3D结构的Sb2(S,Se)3薄膜太阳电池,包括以下步骤:
S1、衬底清洗:以衬底玻璃为窗口层,清洗所述衬底玻璃;
S2、制备缓冲层:以含钛化合物与有机醇溶液配置得到前驱体溶液A,将所述前驱体溶液A旋涂在步骤S1中所述的衬底玻璃上,烘干后退火处理得到TiO2种子层薄膜;
用超纯水稀释含钛化合物并混匀,在酸性环境下配置得到前驱体溶液B,在所述前驱体溶液B内加入模板剂或氟钛酸铵,在所述TiO2种子层薄膜采用水热合成法制备3D-TiO2阵列,形成TiO2层;
S3、制备钝化层:以含钛化合物作为钛源,含钡化合物作为钡源,用所述钛源和钡源配制得到前驱体溶液C,在所述TiO2阵列上采用溶液法原位生长BaTiO3薄膜层,并退火;
S4、制备吸收层:以含硫化合物作为硫源,含锑化合物作为锑源,用超纯水溶解酒石酸、所述硫源及锑源配制得到前驱体溶液D,在所述BaTiO3薄膜层上喷涂所述前驱体溶液D制备得到Sb2(S,Se)3薄膜层;
S5、制备空穴传输层:在Sb2(S,Se)3薄膜层上制备空穴传输层;
S6、制备电极层:在空穴传输层上面蒸镀电极形成电极层。
需要说明的是,步骤S1具体为:依次采用去污粉水、去离子水、丙酮-乙醇混合液、去离子水超声清洗衬底玻璃,衬底玻璃为FTO玻璃、ITO玻璃或AZO玻璃中的一种。
步骤S2具体为:量取体积比为1:1-1:30的含钛化合物与有机醇溶液,搅拌0.5-13h后得到前驱体溶液A,将所前驱体溶液A旋涂在步骤S1中的衬底上,烘干后退火处理得到TiO2种子层薄膜;量取体积比为1:5-1:150的含钛化合物与超纯水并混匀,调节pH为0.5-2,搅拌2-10min后加入模板剂或氟钛酸铵,溶液澄清后得到前驱体溶液B,将前驱体溶液B转移至聚四氟乙烯罐中,将步骤S2制得的TiO2种子层薄膜加入聚四氟乙烯罐中在150-220℃下加热10-32h,后在200-550℃下热处理10-60min中得到TiO2阵列,即TiO2层。
步骤S3具体为:取浓度为0.05-2mmol的含钡化合物于有机醇溶液中混匀,调节pH为9-13或添加四丁基氢氧化铵调控BaTiO3形貌,得到前驱体溶液C,将前驱体溶液C转移至聚四氟乙烯罐中,将步骤S3制得的TiO2阵列加入聚四氟乙烯罐中在180-250℃下加热1-8h,得到BaTiO3/TiO2阵列。
步骤S4具体为:称取酒石酸、硫源、含锑化合物溶于超纯水中配置浓度为0.01-0.5mol/L的前驱体溶液D,于250-350℃加热平台上预加热衬底3-5min,以0.02-0.1ml/min流速在S4制得的BaTiO3/TiO2阵列表面喷涂前驱体溶液D,喷涂3-15次,在单温区退火炉加入硒粉,于在250-400℃下热处理5-30min得到Sb2(S,Se)3-BaTiO3/TiO2薄膜。
步骤S5及S6具体为:将空穴传输层溶液旋涂在步骤S4制的备Sb2(S,Se)3-BaTiO3/TiO2薄膜,生长获得空穴传输层薄膜;然后蒸发镀一层金电极,形成欧姆接触,此步骤为常规操作,故在此不再详细赘述。
需要说明的是,步骤S2中的含钛化合物为钛酸四丁酯、四氯化钛或钛酸异丙酯中的一种或多种,步骤S2中的有机醇溶液为乙醇、乙二醇、丙醇或二乙二醇中的一种或多种混合溶液混合配制。步骤S2中的模板剂为聚乙烯吡咯烷酮、烷基苯磺酸钠或乙二胺中的一种或多种。
步骤S3中的含钛化合物为钛酸四丁酯、四氯化钛或钛酸异丙酯中的一种或多种;步骤S3中的含钡化合物为氯化钡、氢氧化钡或钛酸钡中的一种或多种。步骤S3中的含钡化合物的溶剂为有机醇溶液,如乙醇、乙二醇、丙醇或二乙二醇中的一种或多种混合溶液混合配制,但不仅限于此。
步骤S4中的硫源为硫脲、硫代乙酰胺、L-半胱氨酸中的一种或两种组合;步骤S4中的含锑化合物为乙酸锑、氯化锑或酒石酸锑钾中的一种或多种。
步骤S5中空穴传输层可使用NiO或Cu2Se制备,但不仅限于此,还可以为其他材料。
下面以具体实施例进行详细说明:
实施例一
S1、量取1ml钛酸四丁酯与20ml的乙醇溶液中,搅拌0.5h后得到前驱体溶液A,以1500rpm的转速旋涂在FTO玻璃表面,在100℃的加热平台上预退火3min后,旋涂10层,并在马弗炉中在200℃下热处理60min中得到TiO2种子层薄膜;
S2、称取0.5ml的钛酸四丁酯于25ml的超纯水中,用浓盐酸调节pH到0.5,搅拌10min,后加入0.5g氟钛酸铵,待溶液澄清后得到前驱体溶液B,将前驱体溶液B转移至聚四氟乙烯罐中,放入TiO2种子层薄膜,在180℃下加热16h,后在550℃下热处理60min中得到TiO2阵列;
S3、称取0.05mmol的氢氧化钡于30ml的乙醇、二乙二醇、丙醇混合溶液,用NaOH调节体系pH至9调控BaTiO3形貌,得到前驱体溶液C,将制备好的前驱体溶液C转移至聚四氟乙烯罐中,放入TiO2阵列,在180℃下加热5h,得到BaTiO3/TiO2阵列;
S4、称取1mmol酒石酸、9mmol硫脲、2mmol氯化锑溶于100ml超纯水中得到前驱体溶液D,在325℃加热平台上预加热衬底5min,以0.3ml/min流速在BaTiO3/TiO2阵列表面喷涂前驱体溶液D,喷涂10次,最后在单温区退火炉中加入3mg的硒粉,在350℃下热处理20min得到Sb2(S,Se)3-BaTiO3/TiO2薄膜;
S5及S6、蒸发法制备NiO薄膜做薄膜电池的空穴传输层;利用真空蒸发法制备Au薄膜作为电池的电极,制备出薄膜太阳电池。
实施例1的对比实验1
S1、量取1ml钛酸四丁酯与20ml的乙醇溶液中,搅拌0.5h后得到前驱体溶液A,以1500rpm的转速旋涂在FTO玻璃表面,在100℃的加热平台上预退火3min后,旋涂10层,并在马弗炉中在200下热处理60min中得到TiO2种子层薄膜;
S2、称取0.5ml的含钛化合物于25ml的超纯水中,用浓盐酸调节pH到0.5,搅拌10min,后加入0.5g氟钛酸铵,待溶液澄清后得到前驱体溶液B,将前驱体溶液B转移至聚四氟乙烯罐中,放入TiO2种子层薄膜,在180℃下加热16h,后在550℃下热处理60min中等到TiO2阵列;
S3、称取1mmol酒石酸、9mmol硫脲、2mmol氯化锑溶于100ml超纯水中得到前驱体溶液C,在300℃加热平台上预加热衬底5min,以0.1ml/min流速在TiO2阵列表面喷涂前驱体溶液C,喷涂10次,最后在单温区退火炉中加入15mg的硒粉,在300℃下热处理20min得到Sb2(S,Se)3-TiO2薄膜;
S4及S5、蒸发法制备NiO薄膜做薄膜电池的空穴传输层;利用真空蒸发法制备Au薄膜作为电池的电极,制备出薄膜太阳电池。
实施例2
量取8ml四氯化钛与20ml的乙二醇溶液中,搅拌13h后得到前驱体溶液A,以4000rpm的转速旋涂在ITO玻璃表面,在150℃的加热平台上预退火2min后,旋涂5层,并在马弗炉中在500℃下热处理15min中等到TiO2种子层薄膜;
称取5ml的钛酸异丙酯于30ml的超纯水中,用浓盐酸调节pH到1,搅拌8min,后加入0.5g聚乙烯吡咯烷酮,待溶液澄清后得到前驱体溶液B,将前驱体溶液B转移至聚四氟乙烯罐中,放入TiO2种子层薄膜,在150℃下加热32h,后在200℃下热处理50min中得到TiO2阵列;
称取2mmol的乙酸钡于10ml的乙二醇、丙醇混合溶液,用NaOH调节体系pH至13调控BaTiO3形貌,得到前驱体溶液C,将制备好的前驱体溶液C转移至聚四氟乙烯罐中,放入TiO2阵列,在200℃下加热8h,得到BaTiO3/TiO2阵列;
称取0.1mmol酒石酸、3mmol硫脲、1mmol氯化锑溶于100ml超纯水中得到前驱体溶液D,在350℃加热平台上预加热衬底3min,以0.1ml/min流速在BaTiO3/TiO2阵列表面喷涂前驱体溶液D,喷涂8次,最后在单温区退火炉中加入5mg的硒粉,在400℃下热处理20min得到Sb2(S,Se)3-BaTiO3/TiO2薄膜;
蒸发法制备Cu2Se薄膜做薄膜电池的空穴传输层;利用真空蒸发法制备Au薄膜作为电池的电极,制备出薄膜太阳电池。
请参见图1,为实施例1制备的具有3D结构的Sb2(S,Se)3薄膜太阳电池的层叠示意图。其中1为衬底玻璃;2为缓冲层,即TiO2种子层上生长的TiO2阵列;3为钝化层,即BaTiO3薄膜层;4为吸收层,即Sb2(S,Se)3薄膜层;5为空穴传输层,即HTL层;6为电极层,即Au层。
请参见图2至图6,图2为所制备的TiO2的X射线衍射(XRD)图谱、图3为所制备的BaTiO3的X射线衍射(XRD)图谱、图4为所制备的Sb2(S,Se)3的X射线衍射(XRD)图谱、图5为所制备的Sb2Se3的拉曼图谱,观察图谱,发现成功的制备出TiO2、BaTiO3、和Sb2Se3相。图6为中所制备的Sb2Se3的扫描电子显微镜(SEM)图片,观察图片,发现制备的Sb2(S,Se)3薄膜致密性较好,表面存在明显的大晶粒。
参见图7和图8,图7为实施例1中所制备的薄膜结构于对比实验1中所制备的薄膜结构的光电流图谱,观察图谱,发现添加BaTiO3薄膜的实施例1制得的材料的光电响应明显优于未添加BaTiO3薄膜的对比实验1制得材料的光电响应。图8为实施例1所制备的电池和对比实验1中所制备的电池结构的I-V曲线,发现BaTiO3可以明显提高电池的开路电压。
实施例1中TiO2阵列棒的长度约为800nm,实施案例2中TiO2阵列棒的长度为1000nm。实施案例1中BaTiO3为薄片状结构附着在阵列表面,实施案例2中BaTiO3为球形微晶在TiO2表面。
综上,本发明的一种具有3D结构的Sb2(S,Se)3薄膜太阳电池,BaTiO3薄膜与Sb2(S,Se)3薄膜具有良好的能带匹配,形成匹配良好的pn结结构,有效降低界面复合;且BaTiO3与TiO2薄膜形成双缓冲层结构,增加了耗尽层宽度可以有效提升电池的开路电压。其次,利用BaTiO3的铁电性,自发极化形成电场,其压电势可以有效地影响电荷输运,基于压电光电子效应,将有效提高器件的光电性能,进一步分离载流子减少复合。最后,BaTiO3薄膜可以作为钝化界面,进一步降低界面处的载流子复合率;同时BaTiO3薄膜层中的BaTiO2的粒子纳米粒径小,利用量子隧穿效应,极大的提高了BaTiO3薄膜的导电性。
本发明的一种具有3D结构的硒硫化锑薄膜太阳电池的制备方法,制备得到的Sb2(S,Se)3薄膜太阳电池转换效率高,因转换效率与异质结界面复合有密切关系,异质结界面复合与异质结的晶格失配以及能带失配有关,BaTiO3薄膜与Sb2(S,Se)3薄膜具有良好的能带匹配,可以形成匹配良好的pn结结构,降低界面复合,提高了电池转换效率。
以上所述实施例的各技术特征以及各检测项目可以进行任意的组合,为使描述简洁,未对上述实施例中的各个技术特征所有可能的组合都进行描述,然而,只要这些技术特征的组合不存在矛盾,都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本发明的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。因此,本发明专利的保护范围应以所附权利要求为准。
Claims (10)
1.一种具有3D结构的硒硫化锑薄膜太阳电池,其特征在于,包括从下至上的依次层叠设置的衬底玻璃、缓冲层、钝化层、吸收层、空穴传输层和电极层;
其中,所述缓冲层为3D-TiO2阵列结构,所述钝化层为BaTiO3薄膜层,吸收层为Sb2(S,Se)3薄膜,缓冲层与吸收层形成pn结。
2.如权利要求1所述的具有3D结构的Sb2(S,Se)3薄膜太阳电池,其特征在于,所述BaTiO3薄膜层的厚度范围为2-10nm,所述Sb2(S,Se)3薄膜层的厚度范围为300-2000nm。
3.如权利要求1所述的具有3D结构的Sb2(S,Se)3薄膜太阳电池,其特征在于,所述TiO2阵列具有至少两个棒结构,所述棒结构长度为100-1000nm,直径为20-70nm,密度在100-200rod·μm-2。
4.一种具有3D结构的硒硫化锑薄膜太阳电池的制备方法,用于制备如权利要求1-3任一项所述的具有3D结构的Sb2(S,Se)3薄膜太阳电池,其特征在于,包括以下步骤:
S1、衬底清洗:以衬底玻璃为窗口层,清洗所述衬底玻璃;
S2、制备缓冲层:以含钛化合物与有机醇溶液配置得到前驱体溶液A,将所述前驱体溶液A旋涂在步骤S1中所述的衬底玻璃上,烘干后退火处理得到TiO2种子层薄膜;
用超纯水稀释含钛化合物并混匀,在酸性环境下配置得到前驱体溶液B,在所述前驱体溶液B内加入模板剂或氟钛酸铵,在所述TiO2种子层薄膜采用水热合成法制备3D-TiO2阵列,形成TiO2层;
S3、制备钝化层:以含钛化合物作为钛源,含钡化合物作为钡源,用所述钛源和钡源配制得到前驱体溶液C,在所述TiO2阵列上采用溶液法原位生长BaTiO3薄膜层,并退火;
S4、制备吸收层:以含硫化合物作为硫源,含锑化合物作为锑源,用超纯水溶解酒石酸、所述硫源及锑源配制得到前驱体溶液D,在所述BaTiO3薄膜层上喷涂所述前驱体溶液D制备得到Sb2(S,Se)3薄膜层;
S5、制备空穴传输层:在所述Sb2(S,Se)3薄膜层上制备空穴传输层;
S6、制备电极层:在所述空穴传输层上面蒸镀电极形成电极层。
5.如权利要求4所述的具有3D结构的硒硫化锑薄膜太阳电池的制备方法,其特征在于,所述步骤S1具体为:依次采用去污粉水、去离子水、丙酮-乙醇混合液、去离子水超声清洗所述衬底玻璃,衬底玻璃为FTO玻璃、ITO玻璃或AZO玻璃中的一种。
6.如权利要求4所述的具有3D结构的硒硫化锑薄膜太阳电池的制备方法,其特征在于,所述步骤S2中的含钛化合物为钛酸四丁酯、四氯化钛或钛酸异丙酯中的一种或多种,所述步骤S2中的有机醇溶液为乙醇、乙二醇、丙醇或二乙二醇中的一种或多种混合溶液混合配制。
7.如权利要求4所述的具有3D结构的硒硫化锑薄膜太阳电池的制备方法,其特征在于,所述步骤S2中的模板剂为聚乙烯吡咯烷酮、烷基苯磺酸钠或乙二胺中的一种或多种。
8.如权利要求4所述的具有3D结构的硒硫化锑薄膜太阳电池的制备方法,其特征在于,所述步骤S3中的含钛化合物为钛酸四丁酯、四氯化钛或钛酸异丙酯中的一种或多种;所述步骤S3中的含钡化合物为氯化钡、氢氧化钡或钛酸钡中的一种或多种。
9.如权利要求8所述的具有3D结构的硒硫化锑薄膜太阳电池的制备方法,其特征在于,所述步骤S3中的含钡化合物的溶剂为有机醇溶液。
10.如权利要求3所述的具有3D结构的硒硫化锑薄膜太阳电池的制备方法,其特征在于,所述步骤S4中的含硫化合物为硫脲、硫代乙酰胺、L-半胱氨酸中的一种或两种组合;所述步骤S4中的含锑化合物为乙酸锑、氯化锑或酒石酸锑钾中的一种或多种。
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