WO2022107375A1 - スイッチングモジュール - Google Patents

スイッチングモジュール Download PDF

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Publication number
WO2022107375A1
WO2022107375A1 PCT/JP2021/023661 JP2021023661W WO2022107375A1 WO 2022107375 A1 WO2022107375 A1 WO 2022107375A1 JP 2021023661 W JP2021023661 W JP 2021023661W WO 2022107375 A1 WO2022107375 A1 WO 2022107375A1
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WO
WIPO (PCT)
Prior art keywords
power supply
switching module
fet
driver
gan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2021/023661
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English (en)
French (fr)
Japanese (ja)
Inventor
博史 國玉
卓矢 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyosan Electric Manufacturing Co Ltd
Original Assignee
Kyosan Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyosan Electric Manufacturing Co Ltd filed Critical Kyosan Electric Manufacturing Co Ltd
Priority to US18/034,762 priority Critical patent/US12438540B2/en
Priority to KR1020237018431A priority patent/KR20230107270A/ko
Priority to CN202180075468.5A priority patent/CN116472672A/zh
Priority to EP21894252.2A priority patent/EP4250565A4/en
Publication of WO2022107375A1 publication Critical patent/WO2022107375A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/22—Conversion of DC power input into DC power output with intermediate conversion into AC
    • H02M3/24—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters
    • H02M3/28—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC
    • H02M3/325—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081—Power supply means, e.g. to the switch driver
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • the present invention relates to a switching module applied to a class D amplifier or the like, in particular, a GaN-FET mounted on a substrate, a driver circuit connected to the gate electrode of the GaN-FET via a gate resistor, and the driver circuit. It relates to a switching module including a driver power supply that provides a drive voltage to the driver circuit.
  • the high frequency power supply is applied as a power supply for ultrasonic oscillation, generation of induced power, generation of plasma, etc., and is a power supply having a function of converting direct current to high frequency alternating current by switching operation by a class D amplifier.
  • Class D amplifiers that perform such switching operations are characterized by high power efficiency and low heat generation, and FETs (Field Effect Transistors) are used as modules that include power semiconductors that perform the switching operations. The one used is known.
  • JFETs and MOS FETs are known as FETs that can perform such switching operations, and the current flowing between the electrodes of the source electrode and the drain electrode can be controlled at high speed according to the signal input to the gate electrode.
  • GaN-FET element using GaN gallium nitride
  • Patent Document 1 describes a transformer in which an input signal is temporarily input to a transformer in a switching power supply that drives a transmission amplifier for envelope tracking based on the waveform of the input signal.
  • a speed-up circuit with a first to third switching unit connected to the secondary side of, a resistor and a capacitor connected in parallel, a Schottky diode grounded at the anode, and a gate connected to the resistor and the source Schottky.
  • the first to third switching units include an in-circuit FET in which the gate and source are connected to the secondary side of the transformer, and a gate in which the cathode is an in-circuit FET.
  • a power supply FET that is connected in parallel to an up circuit and has a Schottky junction gate and is a normally-off operation N-channel type GaN-FET is disclosed.
  • Such switching power supplies are said to be able to provide high-speed, large-amplitude switching power supplies and switching methods for highly efficient high-frequency transmitters.
  • the GaN material used for GaN-FETs has the characteristics of having a wider bandgap and lower on-resistance than silicon of general MOS-FETs, and as a switching element, it can operate at high speed and high temperature. It has an advantage in some respects.
  • the GaN-FET can operate at a high speed of 4 times or more in voltage change (dV / dt) and 10 times or more in current change (dI / dt) with respect to a normal MOS-FET. ing.
  • the rise or fall of the gate current input to the gate electrode becomes steep.
  • the gate current accompanied by such a sharp change is easily affected by the parasitic component contained in the FET, and causes surge and ringing.
  • Patent Document 1 also has a configuration in which a special circuit including a transformer, a Schottky diode, a Zener diode, and a capacitor is interposed between a wideband driver that generates a gate current and a switching element.
  • the present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to provide a switching module capable of realizing high-speed switching by a GaN-FET even with a simple and inexpensive configuration. do.
  • one of the typical embodiments of the present invention is a GaN-FET mounted on a substrate and a driver circuit connected to the gate electrode of the GaN-FET via a gate resistor. It is a switching module including a driver power supply that applies a drive voltage to the driver circuit, and the driver circuit is characterized by having a configuration in which a plurality of logic IC circuits are connected in parallel.
  • a simple and inexpensive configuration is provided by configuring a driver circuit for inputting a gate current to a gate electrode of a GaN-FET in which a plurality of logic IC circuits are connected in parallel. Even so, high-speed switching by GaN-FET can be realized.
  • FIG. 1 It is a block diagram of the high frequency power supply apparatus which applied the switching module by Example 1 to an amplifier. It is a circuit diagram which shows the equivalent connection circuit in the vicinity of the module of the switching module shown in FIG. It is a block diagram which shows the outline of the driver power supply and the driver circuit shown in FIG. It is a block diagram which shows the outline of the driver power supply and the driver circuit of the switching module by Example 2. FIG. It is a block diagram which shows the outline of the driver power supply and the driver circuit of the switching module according to Example 3.
  • FIG. 1 It is a block diagram of the high frequency power supply apparatus which applied the switching module by Example 1 to an amplifier. It is a circuit diagram which shows the equivalent connection circuit in the vicinity of the module of the switching module shown in FIG. It is a block diagram which shows the outline of the driver power supply and the driver circuit shown in FIG. It is a block diagram which shows the outline of the driver power supply and the driver circuit of the switching module by Example 2. FIG. It is a block diagram which shows the outline of the driver power supply
  • FIG. 1 is a block diagram of a high-frequency power supply device to which a switching module according to a first embodiment, which is a typical example of the present invention, is applied to an amplifier.
  • FIG. 2 is a circuit diagram showing an equivalent connection circuit in the vicinity of the module of the switching module shown in FIG.
  • FIG. 3 is a block diagram showing an outline of the driver power supply and the driver circuit shown in FIG.
  • a high frequency power supply device is applied to, for example, a high frequency power supply device for a semiconductor manufacturing device having an amplifier output of 1 kW or more and an output frequency of 0.3 MHz or more.
  • the high-frequency power supply device 1 to which the switching module according to the first embodiment is applied has, for example, a DC supply power supply 10 that supplies a DC voltage to be switched and one side (high) of the DC supply power supply 10.
  • a drive signal is output to the switching module 100H connected to the input end on the side), the switching module 100L connected to the input end on the other side (low side) of the DC supply power supply 10, and these switching modules 100H and 100L.
  • the control unit 20 and the like are included.
  • FIG. 1 illustrates a high-frequency power supply device having a so-called half-bridge circuit configuration including a pair of switching modules, it may be a high-frequency power supply device having a full-bridge circuit configuration including two pairs of switching modules. Since the switching modules 100H and 100L have the same configuration, only the configuration of the high-side switching module will be described in the following specific embodiments, and the description of the low-side switching module will be omitted. ..
  • the switching module 100H is driven by a GaN-FET 120H mounted on the substrate 110H, a driver circuit 130H connected to the gate electrode G of the GaN-FET 120H via a connection wiring 140H, and the driver circuit 130H.
  • a driver power supply of 150H which provides voltage.
  • the control unit 20 is electrically connected to the driver circuit 130H on the high side and the driver circuit 130L on the low side via the signal lines 22H and 22L, and is connected to these driver circuits 130H and 130L.
  • the drive signals DsH and DsL are output, respectively.
  • the substrate 110H is formed of a material having good thermal conductivity such as beryllium oxide (BeO) or aluminum nitride (AlN).
  • BeO beryllium oxide
  • AlN aluminum nitride
  • the GaN-FET 120H is a kind of field effect transistor (FET) device in which a current flow path is formed of GaN, and has a "horizontal" structure in which a gate electrode G, a source electrode S, and a drain electrode D are located on the same surface. It is configured as a power semiconductor having. With such a structure, the GaN-FET 120H can perform switching operation at a higher speed than a general MOSFET.
  • FET field effect transistor
  • the driver circuit 130H has a configuration in which logic IC circuits including a plurality of TTL elements 132H 1 , 132H 2 , and 132H 3 are connected in parallel, as shown in FIG.
  • FIG. 3 illustrates a case where three TTL elements 132H 1 to 132H 3 are provided, but in the present invention, the number of logic IC circuits is arbitrary as long as a plurality of TTL elements 132H 1 to 132H 3 are connected in parallel. Can be adopted.
  • connection wiring 140H has a configuration including a bonding wire BW made of, for example, a wire made of gold, copper, or aluminum, and a gate resistance Rg.
  • a connection wiring 140H is simulated as a configuration including a gate resistance Rg, a stray inductance Ls, and a resistance component Rs as an electrically equivalent connection circuit.
  • the attenuation rate of the gate source voltage Vgs applied from the gate electrode G can be controlled.
  • the driver power supply 150H includes an inverter 152H that converts an input from a DC power supply DC into an alternating current, a transformer 154H that transforms an alternating current from the inverter 152H, and a converter 156H that reconverts an alternating current input from the transformer 154H into a direct current. And, including.
  • the output current from the converter 156H is input in parallel to each of the TTL elements 132H 1 to 132H 3 of the driver circuit 130H.
  • the gate current IgH from the driver circuit 130H input to the gate electrode G can be made smaller than, for example, a general MOSFET. ..
  • the input capacitance Ciss is large (about 600 to 3000 pF), and the gate voltage Vgs required for using the device in the saturation region of the high frequency band (for example, 13.56 MHz). (For example, 12V or more), so that the supply power of the driver power supply for driving the driver circuit also needs to be large (for example, 10W or more).
  • the GaN-FET 120H applied to the first embodiment is smaller than a general MOSFET (about 150 to 300 pF), and the gate voltage Vgs required for use in the saturation region is also 5 V or less.
  • the supply voltage of the driver power supply 150H can be set to about 1 to 2W.
  • the GaN-FET can be driven at a higher speed than the MOSFET using a conventional silicon substrate, the displacement voltage gradient (dV / dt) of the drain / source voltage Vds becomes large (for example, 100 V / ns). ).
  • the coupling capacitance of the driver power supply that supplies the gate voltage is as small as possible (for example, 5 pF or less).
  • the transformer 154H of the driver power supply 150H is formed as a core restaurant having a pair of air core coils 155H1 and 155H2 as shown in FIG.
  • the size of the transformer 154H can be reduced to reduce the power supply, and the coupling capacity of the power supply can be reduced.
  • the control unit 20 transmits the drive signals DsH or DsL for on-driving the switching modules 100H and 100L to either module via the signal lines 22H and 22L.
  • the driver circuit 130H outputs the gate current IgH via the connection wiring 140H while receiving the drive signal DsH.
  • the GaN-FET 120H that receives this gate current IgH at the gate electrode G is turned on, and the power input from the input terminal Vin is output to the output terminal Vout.
  • the TTL elements 132H 1 to 132H 3 to which the voltage from the driver power supply 150H is connected are provided in parallel to form a logic IC circuit.
  • the drive signal DsH from the control unit 20 is input to the TTL elements 132H 1 to 132H 3 connected in parallel, and the gate currents Ig 1 to Ig 3 are output from each element.
  • These gate currents Ig 1 to Ig 3 merge on the latter stage side to become the gate current IgH.
  • the gate current IgH output from the driver circuit 130H is desired as the combined current of the plurality of gate currents.
  • the logic circuit constituting the logic IC circuit any kind such as an AND circuit, an OR circuit, and a buffer circuit can be applied.
  • the switching module 100H As a specific configuration of the switching module 100H according to the first embodiment, the following can be exemplified.
  • the gate drive power required for the switching operation of the GaN-FET 120H illustrated in the first embodiment is about 0.1 W.
  • the insulating transformer used for the driver power supply 150H that supplies the drive power to the driver circuit 130H is also, for example, an air core.
  • the capacitance CtH between the windings of the air core coils 155H 1 and 155H 2 can be suppressed to 5 pF or less.
  • the air-core coils 155H 1 and 155H 2 are made of materials having a dielectric constant ⁇ higher than 1, the coil diameter can be further reduced. Further, in FIG. 3, a circular coil is illustrated as the air core coil 155H 1 and 155H 2 , but the shape of the coil may be a polygonal coil, and the number of turns ratio can be arbitrarily selected.
  • the switching modules 100H and 100L include a plurality of TTL elements including driver circuits 130H and 130L for inputting gate currents IgH and IgL to the gate electrodes G of the GaN-FET 120H and 120L.
  • driver circuits 130H and 130L for inputting gate currents IgH and IgL to the gate electrodes G of the GaN-FET 120H and 120L.
  • FIG. 4 is a block diagram showing an outline of the driver power supply and the driver circuit of the switching module according to the second embodiment.
  • the switching module according to the second embodiment having the same or the same configuration as that of the first embodiment is designated by the same reference numeral as that of the first embodiment, and the description thereof will be omitted again.
  • the driver circuit 230H has a configuration in which logic IC circuits including a plurality of CMOS elements 232H 1 , 232H 2 , and 232H 3 are connected in parallel, as shown in FIG. 4 as an example thereof. ..
  • FIG. 4 illustrates a case where three CMOS elements 232H 1 to 232H 3 are provided, but if a plurality of CMOS elements 232H 1 to 232H 3 are connected in parallel, the number of logic IC circuits may be increased. Any number may be adopted.
  • the CMOS elements 232H 1 to 232H 3 to which the voltage from the driver power supply 150H is connected are provided in parallel to form a logic IC circuit.
  • the drive signal DsH from the control unit 20 is input to the CMOS elements 232H 1 to 232H 3 connected in parallel, and the gate currents Ig 1 to Ig 3 are output from each element. These gate currents Ig 1 to Ig 3 merge on the latter stage side to become the gate current IgH.
  • the output gate current IgH can be at a desired level.
  • the capacity of the driver power supply 150H should be further reduced by using the driver circuit 230H according to this modification. Is possible.
  • the switching modules 100H and 100L according to the second embodiment have the effect obtained by the switching module of the first embodiment, and by configuring the logic IC circuit with the COMS element, the driver power supply is provided. As a result, the size of the entire switching module can be reduced because the structure of the switching module can be further simplified.
  • FIG. 5 is a block diagram showing an outline of a driver power supply and a driver circuit of a switching module according to a third embodiment.
  • the switching module according to the third embodiment having the same or the same configuration as that of the first embodiment will be described again with the same reference numerals as those of the first embodiment. Omit.
  • the GaN-FET may have a switching malfunction on the high side when driven at high speed
  • the coupling capacitance of the driver power supply that supplies the gate voltage is as small as possible (for example, 5 pF or less). ) Is desirable. Therefore, in the third embodiment, an optical power supply device in which a light emitting element and a photoelectric converter are combined is used as a driver power supply.
  • the driver power supply 350H is, for example, a light emitting element 352H that emits light by input from a DC power supply DC and a light emitting element 352H. It includes a transmission mechanism 354H for transmitting light and a photoelectric converter 356H for converting the transmitted light into electric power. Then, the electric power output from the photoelectric converter 356H is input to the TTL elements 132H 1 to 132H 3 connected in parallel as a logic IC circuit of the driver circuit 130H, respectively.
  • the light emitting element 352H is composed of an element that emits light when a semiconductor laser (LD) or a light emitting diode (LED) is energized.
  • the driver power supply 350H can be further miniaturized, and the DC power supply DC can be labor-saving.
  • a light emitting means such as a lamp may be applied to the light emitting element 352H.
  • the transmission mechanism 354H can be applied with an optical system such as a mirror arranged on the optical path or a transmission path such as an optical fiber.
  • an isolated power supply in which the capacitance CtH between the light emitting element 352H and the photoelectric converter 356H is suppressed to 1 pF or less is constructed by adjusting the fiber length. Can be done.
  • the light emitting element 352H can be configured as a separate body from the switching module 100H, so that the configuration of the entire module can be further simplified.
  • the photoelectric converter 356H is configured to be capable of converting a semiconductor element such as a photodiode or a phototransistor, or an input optical energy such as a photovoltaic cell into electric power.
  • the transmission mechanism 354H may be omitted and the electric power may be transmitted through the space between the two.
  • the switching modules 100H and 100L according to the third embodiment are configured by configuring the driver power supplies 150H and 150L as optical power supply devices in addition to the effects obtained by the switching module of the second embodiment. Since the drive power of the driver power supply itself can be reduced, the size of the entire switching module can be further reduced as a result. Further, by adjusting the distance between the light emitting element 352H and the photoelectric converter 356H, the feeding capacity (capacitance) between the two can be minimized, so that the malfunction of the GaN-FET 120H can be suppressed. ..

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Amplifiers (AREA)
PCT/JP2021/023661 2020-11-19 2021-06-22 スイッチングモジュール Ceased WO2022107375A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US18/034,762 US12438540B2 (en) 2020-11-19 2021-06-22 Switching module
KR1020237018431A KR20230107270A (ko) 2020-11-19 2021-06-22 스위칭 모듈
CN202180075468.5A CN116472672A (zh) 2020-11-19 2021-06-22 开关模块
EP21894252.2A EP4250565A4 (en) 2020-11-19 2021-06-22 Switching module

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-192669 2020-11-19
JP2020192669A JP7779650B2 (ja) 2020-11-19 2020-11-19 スイッチングモジュール

Publications (1)

Publication Number Publication Date
WO2022107375A1 true WO2022107375A1 (ja) 2022-05-27

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US (1) US12438540B2 (https=)
EP (1) EP4250565A4 (https=)
JP (2) JP7779650B2 (https=)
KR (1) KR20230107270A (https=)
CN (1) CN116472672A (https=)
TW (1) TW202236801A (https=)
WO (1) WO2022107375A1 (https=)

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JP7668252B2 (ja) * 2022-09-08 2025-04-24 株式会社京三製作所 高周波電源装置

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