WO2022085190A1 - ニューロモーフィックデバイス - Google Patents

ニューロモーフィックデバイス Download PDF

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Publication number
WO2022085190A1
WO2022085190A1 PCT/JP2020/039957 JP2020039957W WO2022085190A1 WO 2022085190 A1 WO2022085190 A1 WO 2022085190A1 JP 2020039957 W JP2020039957 W JP 2020039957W WO 2022085190 A1 WO2022085190 A1 WO 2022085190A1
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Prior art keywords
domain wall
wall moving
element group
layer
belonging
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Ceased
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PCT/JP2020/039957
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English (en)
French (fr)
Japanese (ja)
Inventor
章悟 山田
竜雄 柴田
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TDK Corp
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TDK Corp
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Priority to PCT/JP2020/039957 priority Critical patent/WO2022085190A1/ja
Priority to JP2022549791A priority patent/JP7215645B2/ja
Priority to US17/507,561 priority patent/US12131252B2/en
Priority to CN202111240536.7A priority patent/CN114497115B/zh
Publication of WO2022085190A1 publication Critical patent/WO2022085190A1/ja
Anticipated expiration legal-status Critical
Priority to US18/891,694 priority patent/US20250061322A1/en
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G06N3/065—Analogue means
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details

Definitions

  • the present invention relates to a neuromorphic device.
  • a magnetoresistive effect element that utilizes a change in resistance value (change in magnetic resistance) based on a change in the relative angle of magnetization of two ferromagnetic layers is known.
  • the current path for writing data and the current path for reading data are different.
  • three switching elements are connected in order to control currents in different current paths.
  • a magnetoresistive element controlled by three switching elements is called a three-terminal type magnetoresistive element.
  • the magnetic wall moving type magnetoresistive element described in Patent Document 1 is an example of a three-terminal type magnetoresistive element.
  • the magnetic neuro element described in Patent Document 2 is an example of a neuromorphic device using a magnetic wall moving type magnetoresistive element.
  • Resistance changing elements such as magnetoresistive effect elements are often integrated and used.
  • a device in which a resistance changing element is integrated is required to improve the integration property from the viewpoint of increasing the storage capacity.
  • As a method for increasing the integration of the resistance changing element a method for reducing the resistance changing element has been studied.
  • the identification rate of the neuromorphic device will decrease.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a neuromorphic device having high integration of resistance changing elements and improved identification rate.
  • the neuromorphic device includes a first element group and a second element group, and the first element group and the second element group each include a plurality of domain wall moving elements.
  • Each of the plurality of domain wall moving elements includes a domain wall moving layer, a ferromagnetic layer, and a non-magnetic layer sandwiched between the domain wall moving layer and the ferromagnetic layer, and belongs to the first element group.
  • the length of each domain wall moving element in the longitudinal direction of the domain wall moving layer is shorter than the length of each domain wall moving element belonging to the second element group in the longitudinal direction, and has a predetermined size.
  • the rate of change in resistance when the pulse is input is larger for each domain wall moving element belonging to the first element group than for each domain wall moving element belonging to the second element group.
  • the first element group and the second element group are in a laminated structure, and the laminated structure may be laminated on a substrate.
  • the second element group may be located at a position farther from the substrate than the first element group.
  • the number of domain wall moving elements belonging to the first element group may be larger than the number of domain wall moving elements belonging to the second element group.
  • the critical current density required to move the domain wall of the domain wall moving element is such that the domain wall moving element belonging to the second element group has the first domain wall moving element. It may be smaller than each of the domain wall moving elements belonging to the element group.
  • the domain wall moving element of any one of the first element groups and the domain wall moving element of any of the second element groups are said to be present. At least a part of the domain wall moving element may overlap with the magnetic wall moving element.
  • both ends of the domain wall moving element of any of the first element groups are It may be inside both ends of the domain wall moving element of any one of the second element groups.
  • the surface roughness of the lower surface of the domain wall moving element belonging to the second element group is larger than the surface roughness of the lower surface of the domain wall moving element belonging to the first element group. It may be large.
  • the neuromorphic device further includes a connection wiring for connecting the domain wall moving element of any one of the first element groups and the domain wall moving element of any of the second element groups. May be good.
  • the first element group performs a first product-sum operation
  • the second element group performs a second product-sum operation
  • a plurality of elements belonging to the first element group The total output from the magnetic wall moving element may be input to the magnetic wall moving element belonging to the second element group.
  • the pulse length of the write pulse input to the domain wall moving element belonging to the second element group is input to the domain wall moving element belonging to the first element group. It may be different from the pulse length of the write pulse.
  • the pulse amplitude of the write pulse input to the domain wall moving element belonging to the second element group is input to the domain wall moving element belonging to the first element group. It may be different from the pulse amplitude of the write pulse.
  • the first element group and the second element group may each be responsible for operations between different layers in the neural network.
  • the first element group may be responsible for the operation on the input layer side of the neural network as compared with the second element group.
  • the neuromorphic device has high integration of resistance changing elements and excellent identification rate.
  • FIG. 5 is an enlarged plan view of the vicinity of two domain wall moving elements of the integrated device used in the neuromorphic device according to the first embodiment. It is a perspective view of the characteristic part of the integrated apparatus used for the neuromorphic device which concerns on 1st Embodiment.
  • FIG. 5 is an enlarged plan view of the vicinity of two domain wall moving elements of the integrated device used in the neuromorphic device according to the second embodiment.
  • FIG. 3 is an enlarged plan view of the vicinity of two domain wall moving elements of the integrated device used in the neuromorphic device according to the third embodiment. It is sectional drawing of the characteristic part of the integration apparatus used in the neuromorphic device which concerns on 4th Embodiment.
  • FIG. 1 It is an image diagram which shows the state of the change of the resistance value with respect to the number of pulses given to the resistance change element arranged in the integrated apparatus used for the neuromorphic device which concerns on 5th Embodiment. It is sectional drawing of the domain wall moving element belonging to the 1st element group, and the domain wall moving element belonging to a 2nd element group of the integrated apparatus used for the neuromorphic device which concerns on modification 1. FIG. It is sectional drawing of the domain wall moving element belonging to the 1st element group, and the domain wall moving element belonging to a 2nd element group of the integrated apparatus used for the neuromorphic device which concerns on modification 2.
  • FIG. 1 It is sectional drawing of the domain wall moving element belonging to the 1st element group, and the domain wall moving element belonging to a 2nd element group of the integrated apparatus used for the neuromorphic device which concerns on modification 2.
  • FIG. 1 It is sectional drawing of the domain wall moving element belonging to the 1st element group, and the domain wall moving element belonging to a 2nd element group of the integrated apparatus used for the neuromorphic device which concerns on modification 3.
  • FIG. It is sectional drawing of the domain wall moving element belonging to the 1st element group, and the domain wall moving element belonging to a 2nd element group of the integrated apparatus used for the neuromorphic device which concerns on modification 4.
  • FIG. It is sectional drawing of the domain wall moving element belonging to the 1st element group, and the domain wall moving element belonging to a 2nd element group of the integrated apparatus used for the neuromorphic device which concerns on modification 5.
  • FIG. 1st element group It is sectional drawing of the domain wall moving element belonging to the 1st element group, and the domain wall moving element belonging to a 2nd element group of the integrated apparatus used for the neuromorphic device which concerns on modification 5.
  • FIG. 1st element group It is sectional drawing of the domain wall moving element belonging to the 1st element group, and the domain wall moving
  • the x direction is, for example, a direction in which the domain wall moving layer of the domain wall moving element extends.
  • the x direction is an example of the longitudinal direction.
  • the z direction is a direction orthogonal to the x direction and the y direction.
  • the z direction is an example of the stacking direction.
  • the + z direction may be expressed as “up” and the ⁇ z direction may be expressed as “down”.
  • the + z direction is a direction away from the substrate Sb. The top and bottom do not always match the direction in which gravity is applied.
  • connection is not limited to a direct connection, but includes a connection via a layer in between.
  • FIG. 1 is a circuit diagram of an integrated device ID according to the first embodiment.
  • the integrated device ID includes, for example, a first circuit C1 and a second circuit C2.
  • Each of the first circuit C1 and the second circuit C2 is a product-sum calculation circuit that performs different product-sum operations.
  • the first circuit C1 and the second circuit C2 are connected to each other. For example, the output calculated by multiply-accumulate in the first circuit C1 is input to the second circuit C2.
  • the second circuit C2 performs a further multiply-accumulate operation by inputting, for example, the result of the product-sum calculation in the first circuit C1.
  • the integrated device ID according to the first embodiment functions as, for example, a neuromorphic device.
  • a neuromorphic device is a device that performs operations on a neural network. Neuromorphic devices artificially mimic the relationship between neurons and synapses in the human brain.
  • FIG. 2 is a schematic diagram of the neural network NN.
  • the neural network NN has an input layer Lin, an intermediate layer L m , and an output layer L out .
  • FIG. 2 presents an example in which the intermediate layer L m is three layers, the number of intermediate layers L m does not matter.
  • Each of the input layer Lin, the intermediate layer L m , and the output layer L out has a plurality of chips C, and each chip C corresponds to a neuron in the brain.
  • the input layer Lin , the intermediate layer L m , and the output layer L out are each connected by a transmission means.
  • the means of communication correspond to synapses in the brain.
  • the neural network NN increases the correct answer rate of the question by learning by the transmission means (synapse).
  • the neural network NN learns by operating while changing the weight applied to the transmission means.
  • the transmission means performs a product operation for weighting the input signal and a sum operation for adding the results of the product operation. That is, the transmission means performs a product-sum operation.
  • the neural network NN may have different resolutions for each layer.
  • the weight applied to the transmission means may be finely changed as the layer is closer to the output layer L out .
  • the discrimination rate of the neural network NN is increased. That is, in the neural network NN, higher resolution is required for the layer closer to the output layer L out .
  • the first circuit C1 shown in FIG. 1 is, for example, responsible for the product-sum operation from the first intermediate layer L m1 to the second intermediate layer L m2
  • the second circuit C2 is, for example, the second intermediate layer L m2 to the third. It is responsible for the product-sum operation on the intermediate layer L m3 .
  • FIG. 3 is a partial circuit diagram of the integrated device ID according to the first embodiment.
  • FIG. 3A is a circuit diagram of the first circuit C1
  • FIG. 3B is a circuit diagram of the second circuit C2.
  • the first circuit C1 and the second circuit C2 have, for example, similar circuit structures.
  • Each of the first circuit C1 and the second circuit C2 has a plurality of resistance changing elements.
  • the resistance changing element included in the first circuit C1 is, for example, a domain wall moving element 100.
  • the resistance changing element of the second circuit C2 is, for example, a domain wall moving element 110.
  • the domain wall moving elements 100 and 110 are magnetowall moving type magnetoresistive effect elements.
  • the number of the domain wall moving elements 100 in the first circuit C1 is, for example, the same as the number of the domain wall moving elements 110 in the second circuit C2 or larger than the number of the domain wall moving elements 110 in the second circuit C2. For example, the total of the outputs from the plurality of domain wall moving elements 100 connected to the readout line RL connected to the domain wall moving element 110 is input to one domain wall moving element 110.
  • the first circuit C1 and the second circuit C2 have a plurality of first switching elements SW1, a plurality of second switching elements SW2, a plurality of third switching elements SW3, a plurality of write lines WL, and a plurality of read lines, respectively. It has an RL and a plurality of common lines CL.
  • the domain wall moving elements 100 are arranged in a matrix, for example.
  • the domain wall moving elements 110 are arranged in a matrix, for example.
  • One domain wall moving element 100, 110 is connected to one first switching element SW1, one second switching element SW2, and one third switching element SW3, respectively. Any one of the first switching element SW1, the second switching element SW2, and the third switching element SW3 may be connected to a plurality of domain wall moving elements 100 and 110.
  • a current is passed from the read line RL toward the common line CL.
  • the current (output value) output from the common line CL differs depending on the resistance value of the domain wall moving elements 100 and 110 or the conductance (weight) which is the reciprocal of the resistance value. That is, applying a current from the read line RL toward the common line CL corresponds to the product operation in the neural network NN.
  • the common line CL is connected to a plurality of domain wall moving elements 100 and 110 belonging to the same row, and the current detected at the end of the common line CL is the result of multiply-accumulate calculation by the respective domain wall moving elements 100 and 110. It is the value calculated by summing. Therefore, the integrated device ID functions as a product-sum calculation unit of the neural network NN.
  • Each of the currents applied to the read line RL of the integrated device ID is an input to the product-sum calculator, and the current output from each of the common line CL of the integrated device ID is an output from the product-sum calculator.
  • the input signal to the product-sum calculator may be controlled by the pulse length, the pulse amplitude, or the pulse frequency.
  • the first switching element SW1, the second switching element SW2, and the third switching element SW3 are, for example, field effect transistors.
  • the first switching element SW1, the second switching element SW2, and the third switching element SW3 are elements that utilize the phase change of the crystal layer, such as an Ovonic Threshold Switch (OTS), and a metal insulator transition (MIT).
  • OTS Ovonic Threshold Switch
  • MIT metal insulator transition
  • An element that utilizes a change in band structure such as a switch, an element that utilizes a breakdown voltage such as a Zener diode and an avalanche diode, and an element whose conductivity changes as the atomic position changes may be used.
  • the first switching element SW1 is connected to the write line WL.
  • the second switching element SW2 is connected to the common line CL.
  • the third switching element SW3 is connected to the read line RL.
  • the read line RL is a wiring through which a current flows when reading data.
  • the write line WL is a wiring through which a current flows when data is written.
  • the common line CL is a wiring through which a current flows both when writing data and when reading data.
  • FIG. 4 is a cross-sectional view of a characteristic portion of the integrated device ID according to the first embodiment.
  • FIG. 5 is a plan view of a characteristic portion of the integrated device ID according to the first embodiment.
  • FIG. 5 is shown except for the read line RL, the write line WL, and the common line CL.
  • FIG. 6 is an enlarged plan view of the vicinity of the two domain wall moving elements 100 and 110 of the integrated device ID according to the first embodiment.
  • FIG. 4 is an xz cross section cut along the line AA in FIGS. 5 and 6.
  • FIG. 7 is a perspective view of a characteristic portion of the integrated device ID.
  • FIG. 7 is shown except for the insulator In.
  • the integrated device ID includes a substrate Sb and a laminated structure LS.
  • the laminated structure LS is on the substrate Sb.
  • the substrate Sb is, for example, a semiconductor substrate.
  • the substrate Sb has a plurality of switching elements.
  • the plurality of switching elements are insulated from each other by an inter-element insulator Ei.
  • the plurality of switching elements control each of the domain wall moving elements 100 and 110.
  • the plurality of switching elements are, for example, the first switching element SW1 and the second switching element SW2.
  • the third switching element SW3 is located at different positions in the y direction, for example.
  • the third switching element SW3 is located in a peripheral region outside the integrated region in which the domain wall moving elements 100 and 110 are integrated, for example.
  • the case where the first switching element SW1 and the second switching element SW2 are arranged in a matrix in the integrated region will be taken as an example.
  • the first switching element SW1 and the second switching element SW2 are, for example, field effect transistor Trs, respectively.
  • the first switching element SW1 and the second switching element SW2 may not be distinguished and may be simply referred to as a transistor Tr.
  • Transistors Tr are arranged in a matrix, for example.
  • the transistor Tr has, for example, a gate G, a gate insulating film GI, a source S, and a drain D.
  • the gate G is between the source S and the drain D when viewed from the z direction.
  • the gate G controls the flow of charge between the source S and the drain D.
  • the source S and the drain D are names defined by the current flow direction, and their positions change according to the current flow direction.
  • the positional relationship between the source S and the drain D shown in the figure is an example, and the positional relationship between the source S and the drain D of each transistor Tr may be opposite.
  • the laminated structure LS includes a first element group, a second element group, wiring, and an insulator In.
  • the first element group has a plurality of domain wall moving elements 100.
  • the second element group has a plurality of domain wall moving elements 110.
  • the first element group and the second element group are in different layers.
  • the second element group is located at a position farther from the substrate Sb than the first element group.
  • the first element group forms, for example, the first circuit C1 and performs the first product-sum operation.
  • the second element group forms, for example, the second circuit C2, and performs the second product-sum operation. That is, the first element group and the second element group are, for example, responsible for operations between consecutive different layers of the neural network NN shown in FIG.
  • the first element group is, for example, responsible for operations in a layer closer to the input layer Lin than the second element group.
  • the hierarchy is a layer divided by function.
  • the laminated structure LS is manufactured by repeating a laminating step and a processing step, and in many cases, the units laminated in each laminating step are hierarchical.
  • a wiring layer including in-plane wiring and an element layer including a domain wall moving element are alternately laminated.
  • the element layer is an arbitrary number of two or more layers.
  • the plurality of domain wall moving elements 100, 110 and wiring are in the insulator In.
  • the insulator In is formed for each layer.
  • the insulator In is classified into insulators In1, In2, In3, and In4 for each layer, for example.
  • the insulator In insulates between the wirings of the multilayer wiring and between the elements.
  • the insulator In is, for example, silicon oxide (SiO x ), silicon nitride (SiN x ), silicon carbide (SiC), chromium nitride, silicon carbide (SiCN), silicon oxynitride (SiON), aluminum oxide (Al 2 O). 3 ), zirconium oxide (ZrO x ) and the like.
  • the wiring has conductivity.
  • the wiring includes, for example, any one selected from the group consisting of Ag, Cu, Co, Al, Au and Ru.
  • Wiring includes in-plane wiring and via wiring VL.
  • the in-plane wiring is wiring extending in any direction in the xy plane.
  • the via wiring VL is a wiring extending in the z direction.
  • the via wiring VL connects, for example, elements in different layers.
  • the via wiring VL may be a through wiring that penetrates an adjacent layer and reaches a layer or a substrate that sandwiches the adjacent layer.
  • the penetrating wiring connects, for example, each of the domain wall moving elements 100 and 110 and the transistor Tr of the substrate Sb, and penetrates a part of the insulator In in the z direction.
  • the through wiring is continuous in the z direction, for example.
  • the read line RL, the write line WL, the common line CL, the wiring connecting these and the via wiring VL, and the wiring connecting between the via wiring VL are in-plane wiring.
  • the in-plane wiring is, for example, in a layer between the substrate Sb and the first element group and a layer between the first element group and the second element group.
  • the readout line RL extends in the x direction, for example.
  • the readout line RL includes, for example, a readout line RL1 connected to the domain wall moving element 100 and a readout line RL2 connected to the domain wall moving element 110.
  • the readout lines RL1 and RL2 are connected to the ferromagnetic layers 20 and 60 of the domain wall moving elements 100 and 110 via the electrode E, for example.
  • the writing line WL extends in the x direction, for example.
  • the writing line WL is connected to the via wiring VL leading to the transistor Tr, for example, via a wiring extending in the y direction.
  • the common line CL extends in the y direction, for example.
  • the domain wall moving element 100 and the domain wall moving element 110 are in different layers of the laminated structure LS.
  • the domain wall moving element 100 is in the first layer, and the domain wall moving element 110 is in the second layer.
  • Each of the domain wall moving elements 100 and 110 is connected to, for example, one of the transistors Tr of the substrate Sb.
  • the transistors Tr adjacent to each other in the x direction are connected to the domain wall moving elements 100 and 110 having different layers.
  • the transistors Tr adjacent to each other in the x direction are connected to the domain wall moving elements 100 and 110 having different layers.
  • the second row and third row transistors Tr arranged in the y direction control the domain wall moving element 100
  • the first row and fourth row transistors Tr control the domain wall moving element 110.
  • FIG. 8 is a cross-sectional view of the domain wall moving elements 100 and 110 provided in the integrated device ID according to the first embodiment.
  • FIG. 8 is a cross section of each of the domain wall moving elements 100 and 110 cut in the xz plane passing through the center of the width in the y direction of the domain wall moving layers 10 and 50.
  • the domain wall moving elements 100 and 110 are integrated in the integration device ID as shown in FIGS. 4 to 7, for example.
  • the domain wall moving element 100 has a shorter length in the x direction than the domain wall moving element 110. Therefore, both ends of the domain wall moving element 100 in the x direction are arranged so as to be inside both ends of the domain wall moving element 110 in the x direction, for example.
  • the domain wall moving element 110 overlaps with the domain wall moving element 100 at least in part when viewed from the z direction.
  • the domain wall moving element 100 has a domain wall moving layer 10, a non-magnetic layer 30, and a ferromagnetic layer 20.
  • the domain wall moving layer 10 is, for example, on the substrate Sb side of the ferromagnetic layer 20.
  • the domain wall moving element 110 has a domain wall moving layer 50, a non-magnetic layer 70, and a ferromagnetic layer 60.
  • the domain wall moving layer 50 is, for example, on the substrate Sb side of the ferromagnetic layer 60.
  • the domain wall moving elements 100 and 110 are three-terminal type magnetoresistive effect elements, and the length in the x direction is longer than the length in the y direction.
  • the domain wall moving element 100 and the domain wall moving element 110 have different lengths in the x direction.
  • the domain wall moving element 110 has a longer length in the x direction than the domain wall moving element 100.
  • the domain wall moving element 100 and the domain wall moving element 110 have substantially the same other configurations and shapes.
  • the domain wall moving layers 10 and 50 extend in the x direction.
  • the domain wall moving layers 10 and 50 are, for example, rectangular in a plan view from the z direction, with a major axis in the x direction and a minor axis in the y direction.
  • the domain wall moving layers 10 and 50 face the ferromagnetic layers 20 and 60 with the non-magnetic layers 30 and 70 interposed therebetween.
  • the first end of the domain wall moving layers 10 and 50 is connected to the first switching element SW1, and the second end is connected to the second switching element SW2.
  • the domain wall moving layers 10 and 50 include a ferromagnet.
  • the domain wall moving layers 10 and 50 are layers capable of magnetically recording information by changing the internal magnetic state.
  • the domain wall moving layers 10 and 50 can have a first magnetic domain A1 and a second magnetic domain A2 having different magnetic states.
  • the magnetization MA1 of the first magnetic domain A1 and the magnetization MA2 of the second magnetic domain A2 are oriented in opposite directions, for example.
  • the magnetization MA1 of the first magnetic domain A1 is oriented in the + z direction
  • the magnetization MA2 of the second magnetic domain A2 is oriented in the ⁇ z direction.
  • the boundary between the first magnetic domain A1 and the second magnetic domain A2 is the domain wall DW.
  • the domain wall moving layers 10 and 50 can have a domain wall DW inside. When a current equal to or higher than the critical current density of the domain wall moving layers 10 and 50 flows in the longitudinal direction of the domain wall moving layers 10 and 50, the domain wall DW moves.
  • the ratio of the first magnetic domain A1 and the second magnetic domain A2 in the domain wall moving layers 10 and 50 changes.
  • the domain wall DW moves by passing a write current in the x direction of the domain wall moving layers 10 and 50.
  • the resistance values of the domain wall moving elements 100 and 110 change.
  • the resistance values of the domain wall moving elements 100 and 110 change according to the relative angle of magnetization of the ferromagnetic layers sandwiching the non-magnetic layers 30 and 70.
  • the resistance values of the domain wall moving elements 100 and 110 change according to the relative angles between the magnetizations MA1 and MA2 of the domain wall moving layers 10 and 50 and the magnetizations M20 and M60 of the ferromagnetic layers 20 and 60 .
  • the resistance values of the domain wall moving elements 100 and 110 are the ratio of the first magnetic domain A1 and the second magnetic domain A2 in the domain wall moving layers 10 and 50, and the magnetization MA1 and MA2 and the ferromagnetic layer of the domain wall moving layers 10 and 50. Magnetization of 20 and 60 Depends on the relative angle with M 20 and M 60 .
  • the resistance values of the domain wall moving elements 100 and 110 decrease.
  • the ratio of the first magnetic domain A1 is maximum, the magnetization of the domain wall moving layers 10 and 50 and the magnetizations M 20 and M 60 of the ferromagnetic layers 20 and 60 are in a parallel relationship, and the resistance values of the domain wall moving elements 100 and 110 are It becomes the minimum resistance value.
  • the resistance values of the domain wall moving elements 100 and 110 increase.
  • the magnetization of the domain wall moving layers 10 and 50 and the magnetizations M 20 and M 60 of the ferromagnetic layers 20 and 60 are in an antiparallel relationship, and the resistance values of the domain wall moving elements 100 and 110 are It becomes the maximum resistance value.
  • the resistance value changes to analog by changing the position of the domain wall DW.
  • the resistance value of the domain wall moving elements 100 and 110, or the conductance which is the reciprocal of the resistance value, corresponds to the weight of the transmission means in the neural network NN.
  • the resistance change rate of the domain wall moving element 100 when a predetermined pulse is applied to the domain wall moving elements 100 and 110 is larger than the resistance change rate of the domain wall moving element 110.
  • the resistance change rate P is represented by the following equation (1).
  • the maximum resistance value and the minimum resistance value of the domain wall moving element are R max and R min , respectively.
  • P
  • FIG. 9 is an image diagram showing the relationship between the resistance values of the domain wall moving elements 100 and 110 and the number of pulses given to the domain wall moving elements 100 and 110.
  • FIG. 9 shows an image diagram in which the resistance value is increased by the pulse input as an example, but in the present embodiment, a domain wall moving element whose resistance value is decreased by the pulse input may be used.
  • FIG. 9A is a graph relating to the domain wall moving element 100
  • FIG. 9B is a graph relating to the domain wall moving element 110.
  • the conductance of the domain wall moving elements 100 and 110 changes linearly with respect to a given number of pulses, but the resistance value seems to change linearly as shown in FIG. 9 due to the narrow dynamic range.
  • a domain wall moving element whose resistance value changes non-linearly with respect to a given number of pulses may be used, or a domain wall moving element whose resistance value changes linearly with respect to a given pulse number may be used. May be good.
  • FIG. 9 the case where the maximum resistance value R max and the minimum resistance value R min of the domain wall moving element 100 and the maximum resistance value R max and the minimum resistance value R min of the domain wall moving element 110 are the same is illustrated, but they are different. May be.
  • the domain wall moving layer 50 of the domain wall moving element 110 is longer in the longitudinal direction than the domain wall moving layer 10 of the domain wall moving element 100.
  • a predetermined pulse is applied to the domain wall moving elements 100 and 110, the domain wall DW moves and the ratio between the first magnetic domain A1 and the second magnetic domain A2 changes. Since the lengths of the domain wall moving layers 10 and 50 are different, even if the amount of movement of the domain wall DW is the same, the rate of change in the ratio between the first magnetic domain A1 and the second magnetic domain A2 due to the application of a predetermined pulse is the domain wall movement.
  • the element 100 and the domain wall moving element 110 are different.
  • the resistance change rate of the domain wall moving element 100 after applying a predetermined pulse is larger than the resistance change rate of the domain wall moving element 110.
  • the predetermined pulse is an arbitrary pulse having a critical current density or higher of the domain wall moving layers 10 and 50.
  • the critical current density is the current density required to move the domain wall DW.
  • the domain wall moving element 110 can finely divide the resistance value. That is, the domain wall moving element 110 has a higher resolution than the domain wall moving element 100.
  • the resolution can also be adjusted by the pinning site.
  • the domain wall DW becomes difficult to move, and the magnetization MA1 in the first magnetic domain and the magnetization MA2 in the second magnetic domain are strongly fixed.
  • the pinning site is, for example, the unevenness of the domain wall moving layers 10 and 50.
  • the domain wall moving layers 10 and 50 may include a plurality of pinning sites. From the viewpoint of increasing the resolution, the domain wall moving layer 50 may have more pinning sites than the domain wall moving layer 10.
  • the surface roughness of the lower surface 501 of the domain wall moving layer 50 may be coarser than the surface roughness of the lower surface 11 of the domain wall moving layer 10.
  • the domain wall moving layers 10 and 50 are made of a magnetic material.
  • the domain wall moving layers 10 and 50 may be a ferromagnet, a ferrimagnetic material, or a combination thereof with an antiferromagnetic material whose magnetic state can be changed by an electric current.
  • the domain wall moving layers 10, 50 preferably have at least one element selected from the group consisting of Co, Ni, Fe, Pt, Pd, Gd, Tb, Mn, Ge, and Ga.
  • Examples of the material used for the domain wall moving layers 10 and 50 include a Co and Ni laminated film, a Co and Pt laminated film, a Co and Pd laminated film, a MnGa-based material, a GdCo-based material, and a TbCo-based material.
  • Ferrimagnetic materials such as MnGa-based materials, GdCo-based materials, and TbCo-based materials have a small saturation magnetization, and the threshold current required to move the domain wall DW is small. Further, the Co and Ni laminated film, the Co and Pt laminated film, and the Co and Pd laminated film have a large coercive force, and the moving speed of the domain wall DW becomes slow.
  • the antiferromagnetic material is, for example, Mn 3 X (X is Sn, Ge, Ga, Pt, Ir, etc.), CuMnAs, Mn 2 Au, or the like.
  • the domain wall moving layers 10 and 50 may contain the same materials as the ferromagnetic layers 20 and 60 described later.
  • the domain wall moving layers 10 and 50 may contain the same materials as the ferromagnetic layers 20 and 60 described later, and may have a laminated structure.
  • the domain wall moving layers 10 and 50 may be a laminated film of Co, Pd, and CoFeB.
  • the non-magnetic layer 30 is laminated on, for example, the domain wall moving layer 10.
  • the non-magnetic layer 70 is laminated on, for example, the domain wall moving layer 50.
  • the non-magnetic layers 30, 70 are located between the domain wall moving layers 10, 50 and the ferromagnetic layers 20, 60.
  • the non-magnetic layers 30 and 70 are made of, for example, a non-magnetic insulator, a semiconductor or a metal.
  • the non-magnetic insulator is, for example, Al 2 O 3 , SiO 2 , MgO, MgAl 2 O 4 , and a material in which some of these Al, Si, and Mg are replaced with Zn, Be, and the like. These materials have a large bandgap and excellent insulation.
  • the non-magnetic layers 30 and 70 are tunnel barrier layers.
  • the non-magnetic metal is, for example, Cu, Au, Ag or the like.
  • Non-magnetic semiconductors are, for example, Si, Ge, CuInSe 2 , CuGaSe 2 , Cu (In, Ga) Se 2 and the like.
  • the thickness of the non-magnetic layers 30 and 70 is preferably 20 ⁇ or more, and more preferably 30 ⁇ or more.
  • the resistance area product (RA) of the domain wall moving elements 100 and 110 becomes large.
  • the resistance area product (RA) of the domain wall moving elements 100 and 110 is preferably 1 ⁇ 10 4 ⁇ ⁇ m 2 or more, and more preferably 1 ⁇ 10 5 ⁇ ⁇ m 2 or more.
  • the resistance area product (RA) of the domain wall moving elements 100 and 110 is the element resistance of one domain wall moving element 100 and 110 and the element cross-sectional area of the domain wall moving elements 100 and 110 (the non-magnetic layers 30 and 70 are cut in an xy plane. It is expressed as the product of the area of the cut surface).
  • the ferromagnetic layer 20 is on the non-magnetic layer 30.
  • the ferromagnetic layer 60 is on the non-magnetic layer 70.
  • the ferromagnetic layer 20 has a magnetization M 20 oriented in one direction.
  • the ferromagnetic layer 60 has a magnetization M 60 oriented in one direction.
  • the magnetizations M 20 and M 60 of the ferromagnetic layers 20 and 60 are less likely to be reversed than the magnetizations MA1 and MA2 of the first magnetic domain A1 and the second magnetic domain A2 when a predetermined external force is applied.
  • the predetermined external force is, for example, an external force applied to the magnetization by an external magnetic field or an external force applied to the magnetization by a spin polarization current.
  • the ferromagnetic layers 20 and 60 may be referred to as a magnetization fixed layer or a magnetization reference layer.
  • Ferromagnetic layers 20 and 60 include a ferromagnet.
  • the ferromagnetic layers 20 and 60 include, for example, a material that easily obtains a coherent tunnel effect with the domain wall moving layers 10 and 50.
  • the ferromagnetic layers 20 and 60 are, for example, a metal selected from the group consisting of Cr, Mn, Co, Fe and Ni, an alloy containing one or more of these metals, and at least B, C and N of these metals. Includes alloys and the like containing one or more elements.
  • the ferromagnetic layers 20 and 60 are, for example, Co—Fe, Co—Fe—B, and Ni—Fe.
  • the ferromagnetic layers 20 and 60 may be, for example, a Whistler alloy.
  • the Whisler alloy is a half metal and has a high spin polarizability.
  • the Whisler alloy is an intermetallic compound having a chemical composition of XYZ or X 2 YZ, where X is a transition metal element or noble metal element of the Co, Fe, Ni or Cu group on the periodic table, and Y is Mn, V. , Cr or a transition metal of Group Ti or an elemental species of X, and Z is a typical element of Group III to Group V.
  • Examples of the Whisler alloy include Co 2 FeSi, Co 2 FeGe, Co 2 FeGa, Co 2 MnSi, Co 2 Mn 1-a Fe a Al b Si 1-b , and Co 2 FeGe 1-c Ga c .
  • a magnetic layer may be provided on the surface of the ferromagnetic layers 20 and 60 opposite to the non-magnetic layers 30 and 70 via a spacer layer.
  • the ferromagnetic layers 20, 60, the spacer layer, and the magnetic layer have a synthetic antiferromagnetic structure (SAF structure).
  • the synthetic antiferromagnetic structure consists of two magnetic layers sandwiching the non-magnetic layer. By antiferromagnetic coupling between the ferromagnetic layers 20 and 60 and the magnetic layer, the coercive force of the ferromagnetic layers 20 and 60 becomes larger than that in the case without the magnetic layer.
  • the magnetic layer contains, for example, a ferromagnet and may contain an antiferromagnet such as IrMn or PtMn.
  • the spacer layer contains, for example, at least one selected from the group consisting of Ru, Ir, Rh.
  • the direction of magnetization of each layer of the domain wall moving elements 100 and 110 can be confirmed, for example, by measuring the magnetization curve.
  • the magnetization curve can be measured using, for example, MOKE (Magneto Optical Kerr Effect).
  • MOKE Magnetic Optical Kerr Effect
  • the measurement by MOKE is a measurement method performed by incident linearly polarized light on an object to be measured and using a magneto-optical effect (magnetic Kerr effect) in which rotation in the polarization direction occurs.
  • the integration device ID is formed by a laminating step of each layer and a processing step of processing a part of each layer into a predetermined shape.
  • a sputtering method a chemical vapor deposition (CVD) method, an electron beam vapor deposition method (EB vapor deposition method), an atomic laser deposit method, or the like can be used.
  • the processing of each layer can be performed by using photolithography or the like.
  • impurities are doped in a predetermined position on the substrate Sb to form the source S and the drain D.
  • a gate insulating film GI and a gate G are formed between the source S and the drain D.
  • the source S, drain D, gate insulating film GI, and gate G are transistors Tr.
  • the substrate Sb a commercially available semiconductor substrate in which transistors Tr are periodically arranged may be used.
  • the wiring layer up to the first layer is formed.
  • the wiring layer can be made using photolithography.
  • the first element group of the first layer is produced.
  • a ferromagnetic layer, a non-magnetic layer, and a ferromagnetic layer are laminated in order, and they are processed into a predetermined shape.
  • Each of the ferromagnetic layer, the non-magnetic layer, and the ferromagnetic layer is a domain wall moving layer 10, a non-magnetic layer 30, and a ferromagnetic layer 20.
  • the first element group can also be manufactured using photolithography.
  • the integrated device ID is obtained by producing the wiring layer between the first layer and the second layer and the second element group of the second layer by the same procedure.
  • the second element group can be produced by the same procedure as that of the first element group.
  • the domain wall moving element 100 belonging to the first element group is highly integrated, and at the same time, the resolution of the domain wall moving element 110 belonging to the second element group can be enhanced. That is, the neuromorphic device according to the present embodiment has high integration and can improve the identification rate.
  • the domain wall moving element 100 belonging to the first element group and the domain wall moving element 110 belonging to the second element group such as the neuromorphic device according to the present embodiment, have different lengths in the x direction, and are configured for each layer. The idea of causing variation in the above is contrary to the conventional conventional wisdom in which variation in each layer is reduced by using the same element in the array.
  • both ends of the domain wall moving element 100 in the x direction are changed to both ends of the domain wall moving element 110 in the x direction. It is also possible to place it inside. With such a configuration, the wiring required for operating the neuromorphic device can be easily formed. In addition, the number of domain wall moving elements 100 and 110 that can be accommodated in a predetermined region increases. That is, the integration property of the resistance changing element of the integration device ID can be enhanced.
  • the relationship between the domain wall moving element 100 and the domain wall moving element 110 described above may be satisfied by all the domain wall moving elements 100 and 110 among the domain wall moving elements 100 and 110, and any of the domain wall moving elements 100 and 110 may be satisfied. May be satisfied.
  • both ends of the domain wall moving element 100 belonging to the first element group belong to the second element group. It suffices to be inside both ends. Further, it is sufficient that any of the domain wall moving elements 100 belonging to the first element group and any of the domain wall moving elements 110 belonging to the second element group overlap at least in a part.
  • the configuration in which the longitudinal direction of all the domain wall moving elements 100 and 110 belonging to the first element group and the second element group is the x direction is shown in the figure, but the first element group and the second element
  • the longitudinal direction of any of the domain wall moving elements belonging to the group may be a direction other than the x direction.
  • the case where the number of the domain wall moving element 100 belonging to the first element group and the domain wall moving element 110 belonging to the second element group are different is shown in the figure.
  • the number of the element 100 and the domain wall moving element 110 belonging to the second element group may be the same.
  • the pulse length of the write pulse input to the domain wall moving element 110 belonging to the second element group and the pulse length of the write pulse input to the domain wall moving element 100 belonging to the first element group. May have different configurations.
  • the pulse length of the write pulse input to the domain wall moving element 110 may be longer than the pulse length of the write pulse input to the domain wall moving element 100 belonging to the first element group.
  • the pulse amplitude of the write pulse input to the domain wall moving element 110 belonging to the second element group may be different from the pulse amplitude of the write pulse input to the domain wall moving element 100 belonging to the first element group.
  • the pulse amplitude of the write pulse input to the domain wall moving element 110 may be larger than the pulse amplitude of the write pulse input to the domain wall moving element 100.
  • the resolution in each layer of the neuromorphic device is precise. Can be adjusted.
  • the magnitude of the write pulse applied to the domain wall moving layer 50 it is possible to prevent the domain wall DW from being trapped at the trap site. That is, the reliability of the operation of the domain wall moving element 110 can be improved.
  • the magnitude of the pulse is controlled, for example, by a write circuit connected to the integrated device ID.
  • FIG. 10 is a plan view of the integrated device ID1 used in the neuromorphic device according to the second embodiment.
  • FIG. 10 is shown except for the read line RL, the write line WL, and the common line CL.
  • FIG. 11 is an enlarged cross-sectional view of the vicinity of the domain wall moving element 100 belonging to the first element group and the domain wall moving element 111 belonging to the second element group of the integrated device ID1 in the second embodiment.
  • FIG. 12 is a cross section of each of the domain wall moving elements 100 and 111 cut in the yz plane passing through the center of the domain wall moving layers 10 and 51 in the x direction.
  • the neuromorphic device according to the second embodiment is different from the first embodiment in that the width w111 of the domain wall moving element 111 is wider than the width w100 of the domain wall moving element 100.
  • the same configurations as those in the first embodiment are designated by the same reference numerals, and the description thereof will be omitted.
  • the domain wall moving element 111 has a domain wall moving layer 51, a non-magnetic layer 71, and a ferromagnetic layer 61.
  • the domain wall moving element 111 has a different length in the y direction from the domain wall moving element 110.
  • the lengths of the magnetic wall moving layer 51, the non-magnetic layer 71, and the ferromagnetic layer 61 of the magnetic wall moving element 111 belonging to the second element group in the y direction are the magnetic wall moving layer 10, the non-magnetic wall moving layer 10 of the magnetic wall moving element 100 belonging to the first element group. It is longer than the length of the magnetic layer 30 and the ferromagnetic layer 20 in the y direction.
  • the width w111 of the domain wall moving element 111 is longer than the width w100 of the domain wall moving element 100.
  • the width of the domain wall moving element means the average of the widths of the upper surface of the domain wall moving layer and the lower surface of the ferromagnetic layer.
  • the domain wall moving element 100 is covered with the domain wall moving element 111.
  • the second element group is arranged on the output layer L out side of the neural network NN with respect to the first element group.
  • the number of the domain wall moving elements 111 belonging to the second element group may be smaller than the number of the domain wall moving elements 100 belonging to the first element group.
  • the number of domain wall moving elements 111 belonging to the second element group is smaller than the number of domain wall moving elements 100 belonging to the first element group, the number of domain wall moving elements 111 connected to one read current RL is one read wiring RL. It is less than the number of domain wall moving elements 100 connected to. Therefore, the total output of one read wiring RL is smaller in the second element group than in the first element group. If the sum of the outputs in one read wiring RL is too small to be discerned, it causes a learning error in the neuromorphic device.
  • the neuromorphic device according to the second embodiment since the lengths of the domain wall moving layer 51, the non-magnetic layer 71, and the ferromagnetic layer 61 of the domain wall moving element 111 in the y direction are long, the resistance value in the stacking direction can be reduced. That is, the current flowing through the domain wall moving element 111 at the time of reading can be increased. Therefore, the output from the domain wall moving element 111 at the time of reading can be increased. Therefore, learning errors in the neuromorphic device can be suppressed. Further, even the neuromorphic device according to the second embodiment has the same effect as the neuromorphic device according to the first embodiment.
  • FIGS. 10 to 12 show a state in which the domain wall moving element 100 is covered with the domain wall moving element 111 when viewed from the z direction.
  • the integration of the domain wall moving elements 100 and 111 in the integration device ID1 can be enhanced.
  • the arrangement of the domain wall moving element 100 and the domain wall moving element 111 according to the present embodiment is not limited to this example, and the domain wall moving element 100 partially overlaps with the domain wall moving element 111 as in the first embodiment. It may be a configuration.
  • FIG. 12 shows an example in which the yx cross-sectional shape of the domain wall moving elements 100 and 111 is inclined, the configuration may not be inclined.
  • FIG. 13 is a plan view of the integrated device ID 2 used in the neuromorphic device according to the third embodiment.
  • FIG. 13 is shown except for the read line RL, the write line WL, and the common line CL.
  • FIG. 14 is an enlarged plan view of the vicinity of the two domain wall moving elements 100 and 110 of the neuromorphic device according to the third embodiment.
  • the neuromorphic device according to the third embodiment is different from the neuromorphic device according to the first embodiment in the arrangement of the domain wall moving element 100 and the domain wall moving element 110.
  • the same configurations as those in the first embodiment are designated by the same reference numerals, and the description thereof will be omitted.
  • the domain wall moving element 110 belonging to the second element group does not overlap with the domain wall moving element 100 belonging to the first element group when viewed from the z direction.
  • the more various structures exist in the layer below the domain wall moving element 110 the lower the flatness of the laminated surface when the domain wall moving element 110 is manufactured. This is because the number of processes up to the laminated surface increases.
  • the domain wall moving element 110 By arranging the domain wall moving element 110 at a position that does not overlap with the domain wall moving element 100 when viewed from the z direction, the flatness of the laminated surface when the domain wall moving element 110 is manufactured can be improved.
  • the flatness of the laminated surface when manufacturing the domain wall moving element 110 is high, the flatness of the lower surface of the domain wall moving layer 50 is enhanced.
  • the neuromorphic device according to the third embodiment has the same effect as the neuromorphic device according to the first embodiment. Further, the neuromorphic device according to the third embodiment is excellent in reliability of writing operation by reducing the difference in roughness between the domain wall moving layer 10 and the domain wall moving layer 50.
  • FIG. 15 is a cross-sectional view of the integrated device ID3 used in the neuromorphic device according to the fourth embodiment.
  • a part of the domain wall moving element 100 and the domain wall moving element 110 is connected via the connection wiring CW.
  • the same configurations as those in the first embodiment are designated by the same reference numerals, and the description thereof will be omitted.
  • the domain wall moving element 100 is connected to, for example, the domain wall moving element 110 which is in close contact with the domain wall moving element 110 via a connection wiring CW without electrically interposing the substrate Sb.
  • the domain wall moving element 100 does not have to be all connected to the domain wall moving element 110, and any one of them may be used.
  • the ferromagnetic layer 20 of the domain wall moving element 100 is connected to the domain wall moving layer 50 of the domain wall moving element 110.
  • the connection wiring CW may have a vertical switching element VSW.
  • the vertical switching element VSW is a switching element composed of laminated films laminated in the z direction.
  • an element that utilizes the phase change of the crystal layer such as an Ovonic Threshold Switch (OTS), an element that utilizes a change in the band structure such as a metal insulator transition (MIT) switch, a Zener diode and an avalanche diode.
  • OTS Ovonic Threshold Switch
  • MIT metal insulator transition
  • Zener diode avalanche diode
  • the element using the breakdown voltage and the element whose conductivity changes with the change of the atomic position are the vertical switching element VSW.
  • a current path from the readout line RL2 to the common line CL via the domain wall moving elements 100 and 110 is created. That is, the combined resistance obtained by combining the resistance value of the domain wall moving element 100 and the resistance value of the domain wall moving element 110 can be read out.
  • the resistance value of the domain wall moving elements 100 and 110, or the conductance which is the reciprocal of the resistance value corresponds to the weight.
  • the above current path can express a new weight obtained by synthesizing the weights of the two domain wall moving elements 100 and 110. Therefore, in the neuromorphic device using the integrated device ID2 according to the fourth embodiment, three weights can be expressed by the two domain wall moving elements 100 and 110, more complicated operations can be performed, and the expressive power is enhanced. ..
  • the present invention is not limited to this example.
  • the first element group and the second element group may include other resistance changing elements.
  • the neuromorphic device according to the fifth embodiment is different from the neuromorphic device according to the first embodiment in that a resistance changing element other than the domain wall moving elements 100 and 110 is used as the resistance changing element.
  • the length of the resistance changing element belonging to the first element group in the longitudinal direction may be longer than the length of the resistance changing element belonging to the second element group in the longitudinal direction. It is different from the neuromorphic device according to the first embodiment.
  • the volume of the portion contributing to the resistance change of the resistance changing element is preferably such that the resistance changing element belonging to the second element group has the resistance belonging to the first element group. Larger than the changing element.
  • Other configurations are the same as those of the neuromorphic device according to the first embodiment, and detailed description thereof will be omitted.
  • the neuromorphic device includes a first element group and a second element group including a plurality of resistance changing elements.
  • the resistance change rate when a predetermined pulse is input is such that each resistance change element belonging to the first element group has a resistance change belonging to the second element group. Larger than the changing element.
  • the resistance changing element belonging to the first element group is referred to as a first resistance changing element
  • the resistance changing element belonging to the second element group is referred to as a second resistance changing element.
  • any element having a correlation between the number of applied pulses and the resistance value is used.
  • the first resistance change element and the second resistance change element for example, an element using a phase change memory (PCM: Phase Change Memory), an element using a resistance change type memory (ReRAM: Resistive Random Access Memory), and the like are used. Will be. PCM controls the phase change between crystalline and amorphous in a stepwise manner. ReRAM forms a filament by metal precipitation on a medium such as TaO 2 and utilizes the resistance change.
  • the types of the first resistance changing element and the resistance changing element used as the second resistance changing element may be the same or different.
  • FIG. 16 is an image diagram showing the relationship between the resistance values of the first resistance changing element and the second resistance changing element and the number of pulses given to the first resistance changing element and the second resistance changing element.
  • FIG. 16A is a graph relating to the first resistance changing element
  • FIG. 16B is a graph relating to the second resistance changing element.
  • the resistance values of the first resistance changing element and the second magnetoresistive effect increase.
  • FIG. 16 shows an image diagram in which the resistance value is increased by the pulse input as an example, but in the present embodiment, a resistance changing element whose resistance value is decreased by the pulse input may be used.
  • the resistance values of the first resistance changing element and the second resistance changing element may change non-linearly with respect to a given number of pulses. Even in such a case, the resistance change rate when a predetermined pulse is input is larger in the first resistance changing element than in the second resistance changing element.
  • R max is the maximum value of the resistance values of the first resistance changing element and the second magnetoresistive effect
  • R min is the minimum resistance value of the first resistance changing element and the second magnetoresistive effect.
  • is the resistance value of the first resistance changing element and the second resistance changing element when a pulse is applied once to the first resistance changing element and the second resistance changing element, respectively. Is the maximum value of the amount of change in. In the first resistance changing element,
  • R2-R1, and in the second resistance changing element,
  • r2-r1.
  • the maximum and minimum resistance values of the first resistance changing element and the second resistance changing element may be the same or different.
  • the magnitude Jc2 of the critical current density for moving the domain wall DW of the domain wall moving element 110 is smaller than the magnitude Jc1 of the critical current density for moving the domain wall DW of the domain wall moving element 100. May be good. That is, the domain wall moving elements 100 and 110 may satisfy the relationship of Jc2 ⁇ Jc1. When the domain wall moving elements 100 and 110 satisfy Jc2 ⁇ Jc1, the consumption of electric power required for moving the domain wall DW of the domain wall moving element 110 can be suppressed.
  • the domain wall moving element 110 is required to have a higher resolution than the domain wall moving element 100, and may require a large number of pulses to obtain an appropriate resistance value.
  • the critical current densities Jc1 and Jc2 of the domain wall moving elements 100 and 110 can be changed, for example, depending on the configuration, shape, material and the like of the domain wall moving layers 10 and 50.
  • the domain wall moving elements 100 and 110 can satisfy the relationship of Jc2 ⁇ Jc1 by the following means.
  • FIG. 17 is a cross section of each of the domain wall moving elements 100 and 112 cut in the xz plane passing through the center of the domain wall moving layers 10 and 53 in the y direction. It is sectional drawing of the magnetic domain wall moving element used in the neuromorphic device which concerns on modification 1.
  • FIG. FIG. 17 shows the domain wall moving element 100 belonging to the first element group and the domain wall moving element 112 belonging to the second element group.
  • the domain wall moving element 112 has a domain wall moving layer 52.
  • the domain wall moving element 112 differs from the domain wall moving element 110 in that the thickness h52 of the domain wall moving layer 52 in the z direction is thin.
  • the thickness h52 of the domain wall moving layer 52 is thinner than the thickness h10 of the domain wall moving layer 10. Since the thickness h52 of the domain wall moving layer 52 is thinner than the thickness h10 of the domain wall moving layer 10, the critical current density Jc1 of the domain wall moving element 100 and the critical current density Jc2 of the domain wall moving element 112 have a relationship of Jc2 ⁇ Jc1. Meet.
  • FIG. 18 is a cross section of each of the domain wall moving elements 100 and 113 cut in the yz plane passing through the center of the domain wall moving layers 10 and 53 in the x direction.
  • the domain wall moving element 113 belongs to the second element group.
  • the domain wall moving element 113 has a domain wall moving layer 53, a ferromagnetic layer 63, and a non-magnetic layer 73.
  • the domain wall moving element 113 has a short length in the y direction, and is different from the domain wall moving element 110 in that the relationship satisfied between the width w 53 of the domain wall moving layer 53 and the width w 10 of the domain wall moving layer 10 is satisfied.
  • the same components as those of the domain wall moving element 110 are designated by the same reference numerals, and the description thereof will be omitted.
  • the critical current density of the domain wall moving layer becomes extremely small when the line width is around 70 nm (for example, T. Koyama, et al., Nat. Mater. 10, 194 (2011)). Therefore, when the line width of the domain wall moving layer is 70 nm or more, the width w 53 of the domain wall moving layer 53 is preferably narrower than the width w10 of the domain wall moving layer 10, and when the line width of the domain wall moving layer is 70 nm or less.
  • the width w 53 of the domain wall moving layer 53 is preferably wider than the width w 10 of the domain wall moving layer 10.
  • the critical current density of the domain wall moving layer 53 can be made lower than the critical current density of the domain wall moving layer 10.
  • the width of the domain wall moving layer in the y direction means the average of the widths of the upper surface and the lower surface in the y direction.
  • the inclination angle ⁇ 2 of the domain wall moving layer 53 may be larger than the inclination angle ⁇ 1 of the domain wall moving layer 10.
  • FIG. 19 is a cross section of each of the domain wall moving elements 100 and 114 cut in the xz plane passing through the center of the domain wall moving layers 10 and 54 in the y direction.
  • the domain wall moving element 114 belongs to the second element group.
  • the configuration of the domain wall moving element 114 is different from that of the first embodiment.
  • the same configurations as those of the first embodiment are designated by the same reference numerals, and the description thereof will be omitted.
  • the domain wall moving element 114 has a domain wall moving layer 54, a non-magnetic layer 70, and a ferromagnetic layer 60.
  • the domain wall moving layer 54 has a ferromagnetic layer 541, a spacer layer 543, and a ferromagnetic layer 542.
  • the spacer layer 543 is sandwiched between the ferromagnetic layer 541 and the ferromagnetic layer 542 in the z direction.
  • the spacer layer 543 can include at least one selected from the group consisting of Ru, Ir, and Rh.
  • the ferromagnetic layer 541 and the ferromagnetic layer 542 are magnetically coupled.
  • the ferromagnetic layer 541 and the ferromagnetic layer 542 are, for example, antiferromagnetic coupled.
  • the ferromagnetic layer 541, the spacer layer 543, and the ferromagnetic layer 542 have a synthetic antiferromagnetic structure (SAF structure).
  • SAF structure synthetic antiferromagnetic structure
  • FIG. 20 is a cross section of each of the domain wall moving elements 105 and 115 cut in the xz plane passing through the center of the domain wall moving layers 10 and 50 in the y direction.
  • the domain wall moving element 115 belongs to the second element group.
  • Modification 4 is different from the first embodiment in that each of the domain wall moving elements 105 and 115 includes the wiring layer 40 or the wiring layer 80.
  • the same configurations as those in the first embodiment are designated by the same reference numerals, and the description thereof will be omitted.
  • the wiring layers 40 and 80 are in contact with the domain wall moving layers 10 and 50.
  • the wiring layers 40 and 80 are positioned so as to sandwich the non-magnetic layers 30 and 70 and the domain wall moving layers 10 and 50 in the z direction.
  • the wiring layers 40 and 80 are located, for example, at positions overlapping with the ferromagnetic layers 20 and 60 in the z direction.
  • the wiring layer 40 may be located between the domain wall moving layers 10 and 50 and the via wiring VL.
  • the wiring layers 40 and 80 are made of any one of a metal, an alloy, an intermetal compound, a metal boulder, a metal carbide, a metal silicide, and a metal phosphate having a function of generating a spin current by the spin Hall effect when an electric current flows. include.
  • the wiring layers 40 and 80 contain, for example, a non-magnetic heavy metal as a main element.
  • the main element is an element having the highest proportion among the elements constituting the wiring layers 40 and 80.
  • the wiring layers 40 and 80 include, for example, heavy metals having a specific density of yttrium (Y) or higher. Since non-magnetic heavy metals have a large atomic number of atomic number 39 or higher and have d-electrons or f-electrons in the outermost shell, spin-orbit interaction strongly occurs. The spin Hall effect is generated by the spin-orbit interaction, and spins are likely to be unevenly distributed in the wiring layers 40 and 80, and spin current JS is likely to occur.
  • the wiring layers 40, 80 include, for example, any one selected from the group consisting of Au, Hf, Mo, Pt, W, and Ta.
  • the spin Hall angle of the material constituting the wiring layer 80 is larger than the spin Hall angle of the material constituting the wiring layer 40.
  • the "spin Hall angle" is one of the indexes of the strength of the spin Hall effect, and indicates the conversion efficiency of the generated spin current with respect to the current flowing along the wiring layers 40 and 80. That is, the larger the absolute value of the spin hole angle, the larger the amount of spin injected into the domain wall moving layers 10 and 50, and a large spin-orbit torque (SOT) is given to the magnetization.
  • SOT spin-orbit torque
  • the lengths of all the domain wall moving elements belonging to the second element group in the longitudinal direction are longer than the lengths of all the domain wall moving elements belonging to the first element group in the longitudinal direction.
  • the present invention is not limited to this example.
  • both the first element group and the second element group have a domain wall moving element 100 and a domain wall moving element 110, and the domain wall moving element 110 belongs to the second element group rather than the ratio of the domain wall moving element 110 in the first element group.
  • the configuration may have a higher ratio of. Even with such a configuration, the resolution in the second element group can be improved, the identification rate of the neuromorphic device in the first element group, and the integration of the domain wall moving element can be improved.
  • the neural network NN that finely changes the weight applied to the transmission means is reproduced as the layer is closer to the output layer L out . That is, it is described on the premise that higher resolution is required for the layer closer to the output layer L out .
  • the present invention is not limited to this example.
  • a layer closer to the input layer may require higher resolution.
  • the neuromorphic device according to the present embodiment may have a configuration in which the first element group is located closer to the input layer than the second element group.
  • FIG. 21 is a cross-sectional view of the domain wall moving element 106 of the first element group and the domain wall moving element 116 of the second element group of the neuromorphic device according to the modified example 5.
  • the domain wall moving layers 10 and 50 may be located away from the substrate Sb from the ferromagnetic layers 20 and 60.
  • FIG. 21 is referred to as a bottom pin structure in which the ferromagnetic layers 20 and 60 having relatively high magnetization stability are on the substrate Sb side.
  • the bottom pin structure shown in FIG. 21 has higher magnetization stability than the top pin structure shown in FIG.
  • Insulator Lin ... Input layer, L m ... Intermediate layer, L out ... Output layer, LS ... Laminated structure, NN ... Neural network, RL, RL1, RL2 ... Read line, VL ... Via wiring, VSW ... Vertical switching element, ⁇ 1, ⁇ 2 ... Tilt angle

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