JPWO2024004126A1 - - Google Patents
Info
- Publication number
- JPWO2024004126A1 JPWO2024004126A1 JP2024530198A JP2024530198A JPWO2024004126A1 JP WO2024004126 A1 JPWO2024004126 A1 JP WO2024004126A1 JP 2024530198 A JP2024530198 A JP 2024530198A JP 2024530198 A JP2024530198 A JP 2024530198A JP WO2024004126 A1 JPWO2024004126 A1 JP WO2024004126A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/40—Devices controlled by magnetic fields
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/026190 WO2024004126A1 (ja) | 2022-06-30 | 2022-06-30 | 磁壁移動素子及び磁気アレイ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024004126A1 true JPWO2024004126A1 (https=) | 2024-01-04 |
| JPWO2024004126A5 JPWO2024004126A5 (https=) | 2025-03-10 |
Family
ID=89382484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024530198A Pending JPWO2024004126A1 (https=) | 2022-06-30 | 2022-06-30 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20250126806A1 (https=) |
| JP (1) | JPWO2024004126A1 (https=) |
| WO (1) | WO2024004126A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2621887A (en) * | 2022-08-26 | 2024-02-28 | Secqai Ltd | Improvements in neuromorphic computing |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013026600A (ja) * | 2011-07-26 | 2013-02-04 | Renesas Electronics Corp | 半導体装置及び磁気ランダムアクセスメモリ |
| JP2017059679A (ja) * | 2015-09-16 | 2017-03-23 | 株式会社東芝 | 磁気メモリ |
| WO2019073333A1 (ja) * | 2017-10-13 | 2019-04-18 | 株式会社半導体エネルギー研究所 | 記憶装置、電子部品、及び電子機器 |
| WO2022085190A1 (ja) * | 2020-10-23 | 2022-04-28 | Tdk株式会社 | ニューロモーフィックデバイス |
| JP2022094645A (ja) * | 2020-12-15 | 2022-06-27 | Tdk株式会社 | 磁壁移動素子及び磁気アレイ |
-
2022
- 2022-06-30 WO PCT/JP2022/026190 patent/WO2024004126A1/ja not_active Ceased
- 2022-06-30 JP JP2024530198A patent/JPWO2024004126A1/ja active Pending
-
2024
- 2024-12-23 US US18/999,700 patent/US20250126806A1/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013026600A (ja) * | 2011-07-26 | 2013-02-04 | Renesas Electronics Corp | 半導体装置及び磁気ランダムアクセスメモリ |
| JP2017059679A (ja) * | 2015-09-16 | 2017-03-23 | 株式会社東芝 | 磁気メモリ |
| WO2019073333A1 (ja) * | 2017-10-13 | 2019-04-18 | 株式会社半導体エネルギー研究所 | 記憶装置、電子部品、及び電子機器 |
| WO2022085190A1 (ja) * | 2020-10-23 | 2022-04-28 | Tdk株式会社 | ニューロモーフィックデバイス |
| JP2022094645A (ja) * | 2020-12-15 | 2022-06-27 | Tdk株式会社 | 磁壁移動素子及び磁気アレイ |
Non-Patent Citations (1)
| Title |
|---|
| S. FUKAMI ET AL.: ""Low-Current Perpendicular Domain Wall Motion Cell for Scalable High-Speed MRAM"", 2009 SYMPOSIUM ON VLSI TECHNOLOGY DIGEST OF TECHNICAL PAPERS, vol. 12A-2, JPN6025053968, 2009, pages 230 - 231, ISSN: 0005767433 * |
Also Published As
| Publication number | Publication date |
|---|---|
| US20250126806A1 (en) | 2025-04-17 |
| WO2024004126A1 (ja) | 2024-01-04 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
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