JPWO2024004126A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2024004126A5 JPWO2024004126A5 JP2024530198A JP2024530198A JPWO2024004126A5 JP WO2024004126 A5 JPWO2024004126 A5 JP WO2024004126A5 JP 2024530198 A JP2024530198 A JP 2024530198A JP 2024530198 A JP2024530198 A JP 2024530198A JP WO2024004126 A5 JPWO2024004126 A5 JP WO2024004126A5
- Authority
- JP
- Japan
- Prior art keywords
- active region
- domain wall
- layer
- length
- magnetoresistance effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/026190 WO2024004126A1 (ja) | 2022-06-30 | 2022-06-30 | 磁壁移動素子及び磁気アレイ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024004126A1 JPWO2024004126A1 (https=) | 2024-01-04 |
| JPWO2024004126A5 true JPWO2024004126A5 (https=) | 2025-03-10 |
Family
ID=89382484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024530198A Pending JPWO2024004126A1 (https=) | 2022-06-30 | 2022-06-30 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20250126806A1 (https=) |
| JP (1) | JPWO2024004126A1 (https=) |
| WO (1) | WO2024004126A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2621887A (en) * | 2022-08-26 | 2024-02-28 | Secqai Ltd | Improvements in neuromorphic computing |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013026600A (ja) * | 2011-07-26 | 2013-02-04 | Renesas Electronics Corp | 半導体装置及び磁気ランダムアクセスメモリ |
| JP6089081B1 (ja) * | 2015-09-16 | 2017-03-01 | 株式会社東芝 | 磁気メモリ |
| JP7258764B2 (ja) * | 2017-10-13 | 2023-04-17 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| WO2022085190A1 (ja) * | 2020-10-23 | 2022-04-28 | Tdk株式会社 | ニューロモーフィックデバイス |
| JP7666919B2 (ja) * | 2020-12-15 | 2025-04-22 | Tdk株式会社 | 磁壁移動素子及び磁気アレイ |
-
2022
- 2022-06-30 WO PCT/JP2022/026190 patent/WO2024004126A1/ja not_active Ceased
- 2022-06-30 JP JP2024530198A patent/JPWO2024004126A1/ja active Pending
-
2024
- 2024-12-23 US US18/999,700 patent/US20250126806A1/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3868375B2 (ja) | 磁気記憶素子、その製造方法および駆動方法、ならびにメモリアレイ | |
| KR20250168114A (ko) | 강유전층을 포함하는 전자 소자 | |
| JP5339468B2 (ja) | スピントランジスタ及びその駆動方法 | |
| KR100619300B1 (ko) | 스핀-궤도 결합 유도 자장을 이용한 스핀 트랜지스터 | |
| KR102447763B1 (ko) | 자기 터널 접합 소자, 그것을 이용한 자기 메모리 및 자기 터널 접합 소자의 제조 방법 | |
| US9093632B2 (en) | Nonvolatile semiconductor memory device and method of manufacturing the same | |
| US20210383853A1 (en) | Magnetic recording array, product-sum calculator, and neuromorphic device | |
| US8487359B2 (en) | Spin MOSFET and reconfigurable logic circuit using the spin MOSFET | |
| JP2007273493A (ja) | 磁気メモリ装置及びその製造方法 | |
| US8644058B2 (en) | Spin-injection element, and magnetic field sensor and magnetic recording memory employing the same | |
| JP4834834B2 (ja) | トンネル磁気抵抗素子、不揮発性磁気メモリ、発光素子および3端子素子 | |
| CN104766621B (zh) | 一种基于应力控制的磁性逻辑器件 | |
| JP2015061045A (ja) | スピンmosfet | |
| US12225830B2 (en) | Magnetoresistance effect element and magnetic recording array | |
| JPWO2024004126A5 (https=) | ||
| JP7211564B1 (ja) | 磁壁移動素子、磁気アレイ及び磁壁移動素子の製造方法 | |
| JP2022059919A (ja) | 集積装置及びニューロモーフィックデバイス | |
| US11637236B2 (en) | Spin-orbit torque magnetoresistance effect element and magnetic memory | |
| KR101753342B1 (ko) | 상온 작동 스핀제어전자소자 | |
| CN116347896A (zh) | 半导体结构、存储器及其制作方法、电子设备 | |
| CN118104412A (zh) | 磁畴壁移动元件、磁记录阵列以及磁存储器 | |
| KR102039630B1 (ko) | 터널링 전계효과 트랜지스터 및 그 제조방법 | |
| CN117279394A (zh) | 一种半导体器件及存储器 | |
| US20150069548A1 (en) | Magnetoresistive element | |
| CN115700065A (zh) | 磁化旋转元件、磁阻效应元件和磁存储器 |