JPWO2022085190A1 - - Google Patents
Info
- Publication number
- JPWO2022085190A1 JPWO2022085190A1 JP2022549791A JP2022549791A JPWO2022085190A1 JP WO2022085190 A1 JPWO2022085190 A1 JP WO2022085190A1 JP 2022549791 A JP2022549791 A JP 2022549791A JP 2022549791 A JP2022549791 A JP 2022549791A JP WO2022085190 A1 JPWO2022085190 A1 JP WO2022085190A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
- G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
- G06N3/065—Analogue means
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biomedical Technology (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Neurology (AREA)
- Theoretical Computer Science (AREA)
- Biophysics (AREA)
- Artificial Intelligence (AREA)
- Data Mining & Analysis (AREA)
- Evolutionary Computation (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Software Systems (AREA)
- Computational Linguistics (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/039957 WO2022085190A1 (ja) | 2020-10-23 | 2020-10-23 | ニューロモーフィックデバイス |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022085190A1 true JPWO2022085190A1 (https=) | 2022-04-28 |
| JPWO2022085190A5 JPWO2022085190A5 (https=) | 2022-10-28 |
| JP7215645B2 JP7215645B2 (ja) | 2023-01-31 |
Family
ID=81290348
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022549791A Active JP7215645B2 (ja) | 2020-10-23 | 2020-10-23 | ニューロモーフィックデバイス |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US12131252B2 (https=) |
| JP (1) | JP7215645B2 (https=) |
| WO (1) | WO2022085190A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022003957A1 (ja) * | 2020-07-03 | 2022-01-06 | Tdk株式会社 | 集積装置及びニューロモーフィックデバイス |
| CN116602074A (zh) * | 2021-01-12 | 2023-08-15 | Tdk株式会社 | 磁阵列、磁阵列的控制方法和磁阵列的控制程序 |
| US11942131B2 (en) * | 2021-07-16 | 2024-03-26 | Samsung Electronics Co., Ltd. | Processing apparatuses including magnetic resistors |
| WO2024004126A1 (ja) * | 2022-06-30 | 2024-01-04 | Tdk株式会社 | 磁壁移動素子及び磁気アレイ |
| CN117273090B (zh) * | 2023-10-08 | 2025-08-12 | 中国科学院微电子研究所 | 自旋电子神经元器件及相关方法、装置和电子设备 |
| WO2026058351A1 (ja) * | 2024-09-11 | 2026-03-19 | Tdk株式会社 | 磁気アレイ及びニューロモルフィックデバイス |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005150303A (ja) * | 2003-11-13 | 2005-06-09 | Toshiba Corp | 磁気抵抗効果素子および磁気メモリ |
| JP2007258460A (ja) * | 2006-03-23 | 2007-10-04 | Nec Corp | 磁気メモリセル、磁気ランダムアクセスメモリ、半導体装置及び半導体装置の製造方法 |
| WO2019176540A1 (ja) * | 2018-03-16 | 2019-09-19 | Tdk株式会社 | 積和演算器、ニューロモーフィックデバイスおよび積和演算器の使用方法 |
| JP2020061481A (ja) * | 2018-10-11 | 2020-04-16 | Tdk株式会社 | 磁壁移動型磁気記録装置および磁気記録アレイ |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002359355A (ja) | 2001-05-28 | 2002-12-13 | Internatl Business Mach Corp <Ibm> | 多層構造の不揮発性磁気メモリ・セル及びそれを用いた記憶回路ブロック |
| JP5441005B2 (ja) | 2008-02-13 | 2014-03-12 | 日本電気株式会社 | 磁壁移動素子及び磁気ランダムアクセスメモリ |
| WO2016159017A1 (ja) | 2015-03-31 | 2016-10-06 | 国立大学法人東北大学 | 磁気抵抗効果素子、磁気メモリ装置、製造方法、動作方法、及び集積回路 |
| WO2017183574A1 (ja) | 2016-04-21 | 2017-10-26 | Tdk株式会社 | 磁壁利用型スピンｍｏｓｆｅｔおよび磁壁利用型アナログメモリ |
| US10600461B2 (en) * | 2018-01-12 | 2020-03-24 | Tdk Corporation | Magnetic domain wall displacement type magnetic recording element and magnetic recording array |
| JP7168241B2 (ja) | 2018-03-30 | 2022-11-09 | 国立大学法人東北大学 | 集積回路装置 |
| WO2021166137A1 (ja) * | 2020-02-20 | 2021-08-26 | Tdk株式会社 | 磁壁移動素子および磁気記録アレイ |
| JP7520673B2 (ja) * | 2020-10-02 | 2024-07-23 | Tdk株式会社 | 集積装置及びニューロモーフィックデバイス |
| CN116602074A (zh) * | 2021-01-12 | 2023-08-15 | Tdk株式会社 | 磁阵列、磁阵列的控制方法和磁阵列的控制程序 |
| US12536423B2 (en) * | 2022-07-15 | 2026-01-27 | Tdk Corporation | Memristor and neuromorphic device |
-
2020
- 2020-10-23 JP JP2022549791A patent/JP7215645B2/ja active Active
- 2020-10-23 WO PCT/JP2020/039957 patent/WO2022085190A1/ja not_active Ceased
-
2021
- 2021-10-21 US US17/507,561 patent/US12131252B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005150303A (ja) * | 2003-11-13 | 2005-06-09 | Toshiba Corp | 磁気抵抗効果素子および磁気メモリ |
| JP2007258460A (ja) * | 2006-03-23 | 2007-10-04 | Nec Corp | 磁気メモリセル、磁気ランダムアクセスメモリ、半導体装置及び半導体装置の製造方法 |
| WO2019176540A1 (ja) * | 2018-03-16 | 2019-09-19 | Tdk株式会社 | 積和演算器、ニューロモーフィックデバイスおよび積和演算器の使用方法 |
| JP2020061481A (ja) * | 2018-10-11 | 2020-04-16 | Tdk株式会社 | 磁壁移動型磁気記録装置および磁気記録アレイ |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7215645B2 (ja) | 2023-01-31 |
| US20220188618A1 (en) | 2022-06-16 |
| WO2022085190A1 (ja) | 2022-04-28 |
| US12131252B2 (en) | 2024-10-29 |
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