JPWO2022153366A1 - - Google Patents
Info
- Publication number
- JPWO2022153366A1 JPWO2022153366A1 JP2022535499A JP2022535499A JPWO2022153366A1 JP WO2022153366 A1 JPWO2022153366 A1 JP WO2022153366A1 JP 2022535499 A JP2022535499 A JP 2022535499A JP 2022535499 A JP2022535499 A JP 2022535499A JP WO2022153366 A1 JPWO2022153366 A1 JP WO2022153366A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/000698 WO2022153366A1 (ja) | 2021-01-12 | 2021-01-12 | 磁気アレイ、磁気アレイの制御方法及び磁気アレイの制御プログラム |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022153366A1 true JPWO2022153366A1 (https=) | 2022-07-21 |
| JP7143968B1 JP7143968B1 (ja) | 2022-09-29 |
Family
ID=82446986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022535499A Active JP7143968B1 (ja) | 2021-01-12 | 2021-01-12 | 磁気アレイ、磁気アレイの制御方法及び磁気アレイの制御プログラム |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240074323A1 (https=) |
| JP (1) | JP7143968B1 (https=) |
| CN (1) | CN116602074A (https=) |
| WO (1) | WO2022153366A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7215645B2 (ja) * | 2020-10-23 | 2023-01-31 | Tdk株式会社 | ニューロモーフィックデバイス |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050128807A1 (en) * | 2003-12-05 | 2005-06-16 | En-Hsing Chen | Nand memory array incorporating multiple series selection devices and method for operation of same |
| JP5049491B2 (ja) * | 2005-12-22 | 2012-10-17 | パナソニック株式会社 | 電気素子，メモリ装置，および半導体集積回路 |
| JP4297136B2 (ja) * | 2006-06-07 | 2009-07-15 | ソニー株式会社 | 記憶装置 |
| JP5441005B2 (ja) * | 2008-02-13 | 2014-03-12 | 日本電気株式会社 | 磁壁移動素子及び磁気ランダムアクセスメモリ |
| KR102140786B1 (ko) * | 2014-06-27 | 2020-08-03 | 삼성전자주식회사 | 저항성 메모리 장치 및 상기 저항성 메모리 장치의 동작 방법 |
| JP6674616B2 (ja) * | 2015-06-10 | 2020-04-01 | パナソニック株式会社 | 半導体装置、半導体装置の読み出し方法、及び半導体装置を搭載したｉｃカード |
| US10453523B2 (en) * | 2016-04-21 | 2019-10-22 | Tdk Corporation | Magnetic wall utilization-analog memory element and magnetic wall utilization analog memory |
| WO2017183574A1 (ja) * | 2016-04-21 | 2017-10-26 | Tdk株式会社 | 磁壁利用型スピンｍｏｓｆｅｔおよび磁壁利用型アナログメモリ |
| JP7013839B2 (ja) * | 2017-04-14 | 2022-02-01 | Tdk株式会社 | 磁壁利用型アナログメモリ、不揮発性ロジック回路及び磁気ニューロ素子 |
| JP2019028569A (ja) * | 2017-07-26 | 2019-02-21 | 株式会社東芝 | メモリシステム、半導体記憶装置及び信号処理システム |
| JP6551620B1 (ja) * | 2017-10-26 | 2019-07-31 | Tdk株式会社 | 磁壁移動型磁気記録素子及び磁気記録アレイ |
| WO2021171480A1 (ja) * | 2020-02-27 | 2021-09-02 | Tdk株式会社 | 演算回路及びニューロモーフィックデバイス |
| JP7520673B2 (ja) * | 2020-10-02 | 2024-07-23 | Tdk株式会社 | 集積装置及びニューロモーフィックデバイス |
| JP7215645B2 (ja) * | 2020-10-23 | 2023-01-31 | Tdk株式会社 | ニューロモーフィックデバイス |
-
2021
- 2021-01-12 CN CN202180084198.4A patent/CN116602074A/zh active Pending
- 2021-01-12 JP JP2022535499A patent/JP7143968B1/ja active Active
- 2021-01-12 WO PCT/JP2021/000698 patent/WO2022153366A1/ja not_active Ceased
- 2021-01-12 US US18/270,114 patent/US20240074323A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN116602074A (zh) | 2023-08-15 |
| JP7143968B1 (ja) | 2022-09-29 |
| US20240074323A1 (en) | 2024-02-29 |
| WO2022153366A1 (ja) | 2022-07-21 |
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