JP7143968B1 - 磁気アレイ、磁気アレイの制御方法及び磁気アレイの制御プログラム - Google Patents

磁気アレイ、磁気アレイの制御方法及び磁気アレイの制御プログラム Download PDF

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JP7143968B1
JP7143968B1 JP2022535499A JP2022535499A JP7143968B1 JP 7143968 B1 JP7143968 B1 JP 7143968B1 JP 2022535499 A JP2022535499 A JP 2022535499A JP 2022535499 A JP2022535499 A JP 2022535499A JP 7143968 B1 JP7143968 B1 JP 7143968B1
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pulse
domain wall
magnetic array
magnetoresistive effect
wall motion
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JPWO2022153366A1 (https=
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章悟 山田
竜雄 柴田
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TDK Corp
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TDK Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2022535499A 2021-01-12 2021-01-12 磁気アレイ、磁気アレイの制御方法及び磁気アレイの制御プログラム Active JP7143968B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/000698 WO2022153366A1 (ja) 2021-01-12 2021-01-12 磁気アレイ、磁気アレイの制御方法及び磁気アレイの制御プログラム

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JPWO2022153366A1 JPWO2022153366A1 (https=) 2022-07-21
JP7143968B1 true JP7143968B1 (ja) 2022-09-29

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US (1) US20240074323A1 (https=)
JP (1) JP7143968B1 (https=)
CN (1) CN116602074A (https=)
WO (1) WO2022153366A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7215645B2 (ja) * 2020-10-23 2023-01-31 Tdk株式会社 ニューロモーフィックデバイス

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017183573A1 (ja) * 2016-04-21 2017-10-26 Tdk株式会社 磁壁利用型アナログメモリ素子および磁壁利用型アナログメモリ
JP2018182291A (ja) * 2017-04-14 2018-11-15 Tdk株式会社 磁壁利用型アナログメモリ素子、磁壁利用型アナログメモリ、不揮発性ロジック回路及び磁気ニューロ素子
JP2019028569A (ja) * 2017-07-26 2019-02-21 株式会社東芝 メモリシステム、半導体記憶装置及び信号処理システム
WO2021171480A1 (ja) * 2020-02-27 2021-09-02 Tdk株式会社 演算回路及びニューロモーフィックデバイス
JP2022059919A (ja) * 2020-10-02 2022-04-14 Tdk株式会社 集積装置及びニューロモーフィックデバイス
WO2022085190A1 (ja) * 2020-10-23 2022-04-28 Tdk株式会社 ニューロモーフィックデバイス

Family Cites Families (8)

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Publication number Priority date Publication date Assignee Title
US20050128807A1 (en) * 2003-12-05 2005-06-16 En-Hsing Chen Nand memory array incorporating multiple series selection devices and method for operation of same
JP5049491B2 (ja) * 2005-12-22 2012-10-17 パナソニック株式会社 電気素子，メモリ装置，および半導体集積回路
JP4297136B2 (ja) * 2006-06-07 2009-07-15 ソニー株式会社 記憶装置
JP5441005B2 (ja) * 2008-02-13 2014-03-12 日本電気株式会社 磁壁移動素子及び磁気ランダムアクセスメモリ
KR102140786B1 (ko) * 2014-06-27 2020-08-03 삼성전자주식회사 저항성 메모리 장치 및 상기 저항성 메모리 장치의 동작 방법
JP6674616B2 (ja) * 2015-06-10 2020-04-01 パナソニック株式会社 半導体装置、半導体装置の読み出し方法、及び半導体装置を搭載したｉｃカード
WO2017183574A1 (ja) * 2016-04-21 2017-10-26 Tdk株式会社 磁壁利用型スピンｍｏｓｆｅｔおよび磁壁利用型アナログメモリ
JP6551620B1 (ja) * 2017-10-26 2019-07-31 Tdk株式会社 磁壁移動型磁気記録素子及び磁気記録アレイ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017183573A1 (ja) * 2016-04-21 2017-10-26 Tdk株式会社 磁壁利用型アナログメモリ素子および磁壁利用型アナログメモリ
JP2018182291A (ja) * 2017-04-14 2018-11-15 Tdk株式会社 磁壁利用型アナログメモリ素子、磁壁利用型アナログメモリ、不揮発性ロジック回路及び磁気ニューロ素子
JP2019028569A (ja) * 2017-07-26 2019-02-21 株式会社東芝 メモリシステム、半導体記憶装置及び信号処理システム
WO2021171480A1 (ja) * 2020-02-27 2021-09-02 Tdk株式会社 演算回路及びニューロモーフィックデバイス
JP2022059919A (ja) * 2020-10-02 2022-04-14 Tdk株式会社 集積装置及びニューロモーフィックデバイス
WO2022085190A1 (ja) * 2020-10-23 2022-04-28 Tdk株式会社 ニューロモーフィックデバイス

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CN116602074A (zh) 2023-08-15
US20240074323A1 (en) 2024-02-29
WO2022153366A1 (ja) 2022-07-21
JPWO2022153366A1 (https=) 2022-07-21

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