JPWO2022085190A1 - - Google Patents

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Publication number
JPWO2022085190A1
JPWO2022085190A1 JP2022549791A JP2022549791A JPWO2022085190A1 JP WO2022085190 A1 JPWO2022085190 A1 JP WO2022085190A1 JP 2022549791 A JP2022549791 A JP 2022549791A JP 2022549791 A JP2022549791 A JP 2022549791A JP WO2022085190 A1 JPWO2022085190 A1 JP WO2022085190A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022549791A
Other versions
JP7215645B2 (ja
JPWO2022085190A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of JPWO2022085190A1 publication Critical patent/JPWO2022085190A1/ja
Publication of JPWO2022085190A5 publication Critical patent/JPWO2022085190A5/ja
Application granted granted Critical
Publication of JP7215645B2 publication Critical patent/JP7215645B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06NCOMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00Computing arrangements based on biological models
    • G06N3/02Neural networks
    • G06N3/06Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G06N3/065Analogue means
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165Auxiliary circuits
    • G11C11/1675Writing or programming circuits or methods
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B61/00Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B61/00Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/10Magnetoresistive devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/80Constructional details

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Neurology (AREA)
  • Molecular Biology (AREA)
  • Biophysics (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Data Mining & Analysis (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Computational Linguistics (AREA)
  • Artificial Intelligence (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2022549791A 2020-10-23 2020-10-23 ニューロモーフィックデバイス Active JP7215645B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/039957 WO2022085190A1 (ja) 2020-10-23 2020-10-23 ニューロモーフィックデバイス

Publications (3)

Publication Number Publication Date
JPWO2022085190A1 true JPWO2022085190A1 (ja) 2022-04-28
JPWO2022085190A5 JPWO2022085190A5 (ja) 2022-10-28
JP7215645B2 JP7215645B2 (ja) 2023-01-31

Family

ID=81290348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022549791A Active JP7215645B2 (ja) 2020-10-23 2020-10-23 ニューロモーフィックデバイス

Country Status (3)

Country Link
US (1) US20220188618A1 (ja)
JP (1) JP7215645B2 (ja)
WO (1) WO2022085190A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022003957A1 (ja) * 2020-07-03 2022-01-06 Tdk株式会社 集積装置及びニューロモーフィックデバイス
JP7143968B1 (ja) * 2021-01-12 2022-09-29 Tdk株式会社 磁気アレイ、磁気アレイの制御方法及び磁気アレイの制御プログラム
KR20230012882A (ko) * 2021-07-16 2023-01-26 삼성전자주식회사 자기 저항체를 포함하는 프로세싱 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150303A (ja) * 2003-11-13 2005-06-09 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP2007258460A (ja) * 2006-03-23 2007-10-04 Nec Corp 磁気メモリセル、磁気ランダムアクセスメモリ、半導体装置及び半導体装置の製造方法
WO2019176540A1 (ja) * 2018-03-16 2019-09-19 Tdk株式会社 積和演算器、ニューロモーフィックデバイスおよび積和演算器の使用方法
JP2020061481A (ja) * 2018-10-11 2020-04-16 Tdk株式会社 磁壁移動型磁気記録装置および磁気記録アレイ

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6481805B1 (ja) * 2018-01-12 2019-03-13 Tdk株式会社 磁壁移動型磁気記録素子及び磁気記録アレイ
WO2019188252A1 (ja) * 2018-03-30 2019-10-03 国立大学法人東北大学 集積回路装置
WO2021166137A1 (ja) * 2020-02-20 2021-08-26 Tdk株式会社 磁壁移動素子および磁気記録アレイ
JP7520673B2 (ja) * 2020-10-02 2024-07-23 Tdk株式会社 集積装置及びニューロモーフィックデバイス
JP7143968B1 (ja) * 2021-01-12 2022-09-29 Tdk株式会社 磁気アレイ、磁気アレイの制御方法及び磁気アレイの制御プログラム
US20240020520A1 (en) * 2022-07-15 2024-01-18 Tdk Corporation Memristor and neuromorphic device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150303A (ja) * 2003-11-13 2005-06-09 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP2007258460A (ja) * 2006-03-23 2007-10-04 Nec Corp 磁気メモリセル、磁気ランダムアクセスメモリ、半導体装置及び半導体装置の製造方法
WO2019176540A1 (ja) * 2018-03-16 2019-09-19 Tdk株式会社 積和演算器、ニューロモーフィックデバイスおよび積和演算器の使用方法
JP2020061481A (ja) * 2018-10-11 2020-04-16 Tdk株式会社 磁壁移動型磁気記録装置および磁気記録アレイ

Also Published As

Publication number Publication date
WO2022085190A1 (ja) 2022-04-28
JP7215645B2 (ja) 2023-01-31
US20220188618A1 (en) 2022-06-16

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