WO2022063239A1 - 封装体及其制备方法、终端和电子设备 - Google Patents

封装体及其制备方法、终端和电子设备 Download PDF

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Publication number
WO2022063239A1
WO2022063239A1 PCT/CN2021/120376 CN2021120376W WO2022063239A1 WO 2022063239 A1 WO2022063239 A1 WO 2022063239A1 CN 2021120376 W CN2021120376 W CN 2021120376W WO 2022063239 A1 WO2022063239 A1 WO 2022063239A1
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WIPO (PCT)
Prior art keywords
low
frequency
conductive structure
electronic components
package body
Prior art date
Application number
PCT/CN2021/120376
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English (en)
French (fr)
Inventor
张乐
郭学平
王惠娟
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荣耀终端有限公司
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Application filed by 荣耀终端有限公司 filed Critical 荣耀终端有限公司
Priority to US18/041,762 priority Critical patent/US20230309281A1/en
Priority to EP21871608.2A priority patent/EP4181194A4/en
Publication of WO2022063239A1 publication Critical patent/WO2022063239A1/zh

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H05K9/0073—Shielding materials
    • H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M1/00—Substation equipment, e.g. for use by subscribers
    • H04M1/02—Constructional features of telephone sets
    • H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
    • H04M1/026—Details of the structure or mounting of specific components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H05K9/0007—Casings
    • H05K9/002—Casings with localised screening
    • H05K9/0022—Casings with localised screening of components mounted on printed circuit boards [PCB]
    • H05K9/0024—Shield cases mounted on a PCB, e.g. cans or caps or conformal shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits

Definitions

  • the present application relates to a package with low-frequency electromagnetic shielding performance, a method for preparing the package, and a terminal and electronic equipment using the package.
  • the low frequency electromagnetic wave (generally below 10MHz) has a large adhesion depth in the metal, resulting in a small absorption loss of the micron-scale metal shielding layer to the electromagnetic wave, resulting in a low shielding effect of the conformal shielding layer at low frequencies (conformal shielding).
  • a first aspect of the embodiments of the present application provides a package, including:
  • a low-frequency shielding conductive structure is embedded in the packaging material layer, the low-frequency shielding conductive structure is located on the side of the packaging material layer away from the substrate and is spaced from the plurality of electronic components, and the low-frequency shielding conductive structure is conductive
  • the structure has a plurality of through holes, the opening area of each of at least some of the through holes is less than 1 mm*1 mm, and the thickness of the low-frequency shielding conductive structure is not less than 10 ⁇ m.
  • the low-frequency shielding conductive structure with a plurality of miniature through-holes in the present application can better shield the electromagnetic waves in the low-frequency frequency band, that is, the electromagnetic waves are not allowed to penetrate out from the non-conductive area (through-holes);
  • the thickness of the low-frequency shielding conductive structure to be not less than 10 ⁇ m, the loss of electromagnetic waves in the low-frequency shielding conductive structure is increased, so the package body as a whole exhibits good shielding effectiveness of low-frequency electromagnetic waves.
  • the material of the low-frequency shielding conductive structure is a conductive material having an electrical conductivity of not less than 5 ⁇ 10 6 S/m or a magnetic permeability of 4 ⁇ 10 -7 H/m or more.
  • the selection of the conductive material with high electrical conductivity and high magnetic permeability can further increase the degree of loss of electromagnetic waves in the low-frequency shielding conductive structure.
  • the plurality of electronic components include electronic components that emit low-frequency electromagnetic waves, and the low-frequency range is less than 10 MHz; the low-frequency shielding conductive structure at least covers the electronic components that emit low-frequency electromagnetic waves, and covers The area of the electronic component that emits low-frequency electromagnetic waves is mesh-shaped.
  • the low-frequency shielding structure does not necessarily need to cover the top area of the entire package body, and the area where the low-frequency shielding structure is arranged at least covers the electronic components that emit low-frequency electromagnetic waves.
  • the opening area of each through hole in the low-frequency shielding conductive structure covering the region of the electronic component that emits low-frequency electromagnetic waves is less than 1 mm*1 mm.
  • the plurality of through holes of the low-frequency shielding conductive structure are arranged in an array.
  • the arrangement of the through holes is not limited to an array arrangement, but can also be an irregular arrangement, and the shape of the through holes is also not limited, as long as the low-frequency shielding conductive structure covers the electronic components that emit low-frequency electromagnetic waves.
  • the area is reticulated.
  • a conformal shielding layer is further provided on the outer surface of the packaging material layer, and the conformal shielding layer is a micron-scale conductive thin layer; the low-frequency shielding conductive structure and the conformal shielding layer connect.
  • the conformal shielding layer is generally a conductive metal layer with a thickness not higher than 10 microns; the conformal shielding layer is mainly used for shielding high-frequency electromagnetic waves (generally higher than 10 MHz).
  • a complete conductive thin layer is further disposed between the low-frequency shielding conductive structure and the conformal shielding layer.
  • the low frequency electromagnetic shielding efficiency of the package can be further improved.
  • a grounded conductive partition wall is further embedded in the packaging material layer to divide the packaging body into at least two chambers, thereby weakening the coupling of electromagnetic waves between different chambers.
  • the conductive partition wall runs through the packaging material layer, and one end is connected to the substrate, so as to divide the packaging body into at least two chambers, so that the coupling of electromagnetic waves between the chambers will be greatly weakened, thereby realizing the interior of the packaging body. Shielding between electronic components.
  • a surface of the low-frequency shielding conductive structure away from the substrate is covered with a complete conductive thin layer.
  • the low frequency electromagnetic shielding efficiency of the package can be further improved.
  • a second aspect of the embodiments of the present application provides a method for preparing a package, including:
  • an initial package includes a substrate, a plurality of electronic components disposed on the substrate, and an encapsulation material layer on the substrate and encapsulating the plurality of electronic components;
  • a groove is formed on the side of the packaging material layer away from the substrate, at least part of the groove is in the shape of a mesh, the depth of the groove is not less than 10 ⁇ m, and the groove is connected to the plurality of electrons.
  • the components are spaced apart, and the mesh portion of the groove divides the packaging material layer into a plurality of spaced units, and the area of each unit is less than 1mm*1mm; and
  • Conductive material is formed in the trenches to form low frequency shielding conductive structures.
  • the preparation method of the package body is simple in process and relatively easy to implement.
  • the preparation method further includes forming a conformal shielding layer on the outer surface of the packaging material layer, the conformal shielding layer being in contact with the low-frequency shielding conductive structure.
  • the conformal shielding layer is generally a conductive metal layer with a thickness not higher than 10 microns; the conformal shielding layer is mainly used for shielding high-frequency electromagnetic waves (generally higher than 10 MHz).
  • the preparation method further includes forming a conductive thin layer on the surface of the low-frequency shielding conductive structure away from the substrate.
  • the low frequency electromagnetic shielding efficiency of the package can be further improved.
  • the conductive material formed in the trench has an electrical conductivity of not less than 5 ⁇ 10 6 S/m and a magnetic permeability of 4 ⁇ 10 -7 H/m or more.
  • the selection of the conductive material with high electrical conductivity and high magnetic permeability can further increase the degree of loss of electromagnetic waves in the low-frequency shielding conductive structure.
  • the plurality of electronic components include electronic components that emit low-frequency electromagnetic waves, the low-frequency range is less than 10 MHz, and the low-frequency shielding conductive structure at least covers the electronic components that emit low-frequency electromagnetic waves, and all The area where the low-frequency shielding conductive structure covers the electronic components that emit low-frequency electromagnetic waves is mesh; the opening area of each through hole of the mesh portion of the low-frequency shielding conductive structure is less than 1mm*1mm.
  • the low-frequency shielding structure does not necessarily need to cover the top area of the entire package body, and the area where the low-frequency shielding structure is arranged at least covers the electronic components that emit low-frequency electromagnetic waves.
  • a third aspect of an embodiment of the present application provides a terminal, including a housing and a package body accommodated in the housing, and the package body is the aforementioned package body.
  • a fourth aspect of the embodiments of the present application provides an electronic device, including the aforementioned package.
  • the terminal and electronic device of the present application can effectively prevent low-frequency-sensitive devices from being interfered by low-frequency electromagnetic waves, thereby having good use effects.
  • FIG. 1 is a schematic cross-sectional view of a package body and a device sensitive to low-frequency electromagnetic waves disposed adjacent to each other according to the first embodiment of the present application.
  • FIG. 2 is a schematic top view of the low-frequency shielding conductive structure and the conductive partition wall of FIG. 1 .
  • FIG. 3 is a schematic diagram of several shapes of the low-frequency shielding conductive structure.
  • 4A and 4B are schematic top and cross-sectional views of a package according to a modified embodiment, respectively.
  • FIG. 5 is a schematic cross-sectional view of the package body according to the second embodiment of the present application.
  • FIG. 6 is a schematic cross-sectional view of a package body according to Embodiment 3 of the present application.
  • FIG. 7 is a schematic cross-sectional view of a package body according to Embodiment 4 of the present application.
  • 8A to 8D are schematic cross-sectional views of the package body according to the first example of fabrication.
  • a terminal (not shown) includes a casing (not shown) and a package body 100 located in the casing.
  • the terminal may be an electronic device such as a mobile phone and a tablet computer.
  • the package body 100 includes a substrate 10 , a plurality of electronic components 30 disposed on the substrate 10 , and a packaging material layer 50 located on the substrate 10 and encapsulating the plurality of electronic components 30 . .
  • the plurality of electronic components 30 may include one or more passive devices, and the passive devices include but are not limited to resistors, capacitors, inductors, filters, couplers, and the like.
  • the plurality of electronic components 30 may also include one or more active devices, such as active chips, including but not limited to power chips, digital chips, radio frequency chips, and the like.
  • Active components and passive components in the plurality of electronic components 30 include electronic components 30 that emit low-frequency electromagnetic waves.
  • low frequency refers to a frequency of less than 10 MHz, for example, greater than or equal to 10 kHz and less than 10 MHz.
  • the packaging material layer 50 has a low dielectric constant and completely covers the plurality of electronic components 30 .
  • a device 60 sensitive to low-frequency electromagnetic waves such as a near field communication (Near field communication, NFC) chip
  • NFC Near field communication
  • the shielding effect of the existing package against low-frequency electromagnetic waves is very limited, which makes the surrounding devices 60 sensitive to low-frequency electromagnetic waves susceptible to interference.
  • the low-frequency electronic components 30 are placed close to the NFC chip, the low-frequency noise in the low-frequency electronic components 30 is radiated and interfered by the internal space of the package 100 . to the NFC chip, thereby deteriorating the performance of the NFC communication.
  • a low-frequency shielding conductive structure 20 is provided in the package body 100 , and the low-frequency shielding conductive structure 20 can effectively shield low-frequency electromagnetic waves, thereby preventing the device 60 sensitive to low-frequency electromagnetic waves from being interfered by low-frequency electromagnetic waves.
  • the low-frequency shielding conductive structure 20 is embedded in the packaging material layer 50 , and the low-frequency shielding conductive structure 20 is located on the side of the packaging material layer 50 away from the substrate 10 and is connected to the packaging material layer 50 .
  • the plurality of electronic components 30 are spaced apart.
  • the surface of the low frequency shielding conductive structure 20 away from the substrate 10 is exposed to the packaging material layer 50 .
  • At least a part of the low frequency shielding conductive structure 20 is mesh-shaped, and the mesh-shaped part has a plurality of through holes 21 .
  • the low-frequency shielding conductive structure 20 is mesh-shaped as a whole; the low-frequency shielding conductive structure 20 has a plurality of through holes 21 .
  • the plurality of through holes 21 are arranged in a matrix, and the opening area of each through hole 21 is less than 1 mm*1 mm.
  • the thickness of the low-frequency shielding conductive structure 20 is not less than 10 ⁇ m, for example, greater than 10 ⁇ m and less than or equal to 100 ⁇ m. Since the low frequency shielding conductive structure 20 itself is embedded in the packaging material layer 50 , each through hole 21 is filled with the packaging material of the packaging material layer 50 .
  • the material of the low-frequency shielding conductive structure 20 is a conductive material with high electrical conductivity (conductivity is not less than 5 ⁇ 10 6 S/m) or high magnetic permeability (magnetic permeability is greater than or equal to 4 ⁇ 10 -7 H/m). material such as metallic copper.
  • the low-frequency shielding principle of the low-frequency shielding conductive structure 20 is introduced as follows: the wavelength of the low-frequency (10kHz-10MHz) electromagnetic wave is longer (30m-30000m), and the through hole 21 of the low-frequency shielding conductive structure 20 is set smaller, and the low-frequency electromagnetic wave cannot be. Penetrates out of the non-conductive area (via 21 area). In addition, in order to ensure the shielding effectiveness of the package at low frequencies (10kHz-10MHz), it is necessary to increase the loss of electromagnetic waves in the conductive structure.
  • Loss degree attenuation factor ⁇ thickness of conductive structure (1)
  • Attenuation factor 1/adhesion depth (2)
  • Adhesion depth (2/(angular frequency*magnetic permeability*conductivity)) 0.5 (3)
  • the loss degree in addition to increasing the attenuation factor, the loss degree can also be increased by increasing the thickness of the low-frequency shielding conductive structure 20. Therefore, it is recommended that the thickness of the low-frequency shielding conductive structure 20 is not less than 10 ⁇ m.
  • the material of the low-frequency shielding conductive structure 20 needs to select high conductivity (conductivity not less than 5 ⁇ 10 6 S/m), high magnetic permeability (magnetic permeability A conductive material with a rate greater than or equal to 4 ⁇ 10 -7 H/m).
  • the low-frequency shielding conductive structure 20 can greatly lose the low-frequency electromagnetic noise from the electronic components 30 below it, thereby significantly improving the shielding effectiveness of the electromagnetic radiation of the package body 100 .
  • the low-frequency shielding conductive structure 20 does not necessarily need to cover the entire top area of the package body 100 , and the area where the low-frequency shielding conductive structure 20 is disposed is related to the location of the low-frequency noise source.
  • the low-frequency shielding conductive structure 20 needs to be arranged in the projection area of the low-frequency electronic components and the nearby area to ensure that the low-frequency electromagnetic waves emitted by the low-frequency electronic components 30 can be transmitted by the low-frequency shielding conductive structure 20 after being transmitted to the top of the packaging material layer 50. intercept.
  • the low-frequency shielding conductive structure 20 is arranged to cover at least the low-frequency electronic components 30, and the area covering the low-frequency electronic components 30 is mesh-shaped, and each through hole 21 of the mesh-shaped area is The opening area is less than 1mm*1mm.
  • each through hole 21 of the low frequency shielding conductive structure 20 is square, and the plurality of through holes 21 are arranged in an array.
  • the shape of the through hole 21 is not limited, and can also be other shapes.
  • FIG. 3 shows several different shapes of the low frequency shielding conductive structure 20.
  • the shape of the through hole 21 can also be a rectangle, a triangle, or other irregularities. shape.
  • the arrangement of the plurality of through holes 21 may be a regular and uniform arrangement, such as an array arrangement as shown in FIG. 3 . In other embodiments, as shown in FIG. 4A , the arrangement of the plurality of through holes 21 may also be uneven. As shown in FIG. 4A , the plurality of through holes 21 has a larger through hole 25 (blank area), and the areas of the remaining through holes 21 are equal and smaller than 1 mm*1 mm. As shown in FIG. 4B , the The larger through hole 25 is facing an electronic component 30, the height of the electronic component 30 is larger than that of other electronic components 30, and it is not a low-frequency electronic component, and the area of the larger through hole 25 is larger than all the electronic components.
  • the cross section of the electronic component 30 is used for the electronic component 30 to pass through the larger through hole 25 . That is, the area facing the electronic component 30 is not provided with the mesh-like portion of the low-frequency shielding conductive structure 20 , but is blank. higher, and the overall height of the package body 100 will not be increased due to the introduction of the low-frequency shielding conductive structure 20 .
  • a conformal shielding layer 70 is further provided on the outer surface of the packaging material layer 50 , and the low-frequency shielding conductive structure 20 is directly connected to the conformal shielding layer 70 .
  • the packaging material layer 50 includes a top surface 51 away from the substrate 10 and a plurality of side surfaces 53 connected to the top surface 51 .
  • the conformal shielding layer 70 completely covers the top surface 51 and the plurality of side surfaces 53 , and extends along the side surfaces 53 to cover the coplanar surface of the substrate 10 and the side surfaces 53 .
  • the conformal shielding layer 70 is a micron-scale conductive metal layer, generally a conductive metal layer with a thickness of not more than 10 microns.
  • the conformal shielding layer 70 is mainly used for shielding high-frequency electromagnetic waves (generally higher than 10 MHz).
  • the low-frequency shielding conductive structure 20 and the top surface 51 of the packaging material layer 50 are flush, so that the low-frequency shielding conductive structure 20 and the conformal shielding layer 70 can be better realized. Connection.
  • the surface of the low-frequency shielding conductive structure 20 away from the substrate 10 is in contact with the conformal shielding layer 70 .
  • the part of the conformal shielding layer 70 may not extend to the edge of the package body 100 so as not to contact the part of the conformal shielding layer 70 covering the side surface 53 .
  • the packaging material layer 50 may also The grounded conductive partition wall 90 is embedded to divide the package body 100 into at least two chambers, so that the coupling of electromagnetic waves between the chambers will be greatly weakened, thereby realizing the connection between the internal electronic components 30 of the package body 100 . shield.
  • One end of the conductive partition wall 90 is connected to the conformal shielding layer 70 , and the other end is connected to the substrate 10 .
  • the comparative example 1 is a conformal shielding layer 70 with a thickness of 3 ⁇ m
  • the experimental example 1 is provided with not only a conformal shielding layer 70 with a thickness of 3 ⁇ m but also a low-frequency shielding conductive structure 20 (thickness is 50 ⁇ m, and the through hole 21 has a side length of 0.5 mm square), the other conditions of Comparative Example 1 and Experimental Example 1 were the same.
  • Comparative example 2 is a conformal shielding layer 70 with a thickness of 9 ⁇ m.
  • the shielding effectiveness of the 3 ⁇ m-thick conformal shielding layer is only 2dB, and the shielding effectiveness of the 9 ⁇ m-thick conformal shielding layer is only 5.5dB, and the shielding effectiveness can be improved after adding the low-frequency shielding conductive structure. 12.5dB and 13.5dB.
  • the shielding effectiveness of the 3 ⁇ m conformal shielding layer is only 13dB, while the shielding effectiveness of the 9 ⁇ m thick conformal shielding layer is only 24dB, and the shielding effectiveness can be increased by 17dB and 10dB respectively after adding the low frequency shielding conductive structure.
  • the package 100 of this embodiment is provided with a low-frequency shielding conductive structure 20 having a plurality of through holes 21 on the top and is connected to the conformal shielding layer 70 , thereby greatly improving the shielding effectiveness of low-frequency electromagnetic radiation.
  • the low-frequency shielding conductive structure 20 can also help to increase the shielding effectiveness of high-frequency electromagnetic radiation to a certain extent.
  • the package body 200 of the second embodiment of the present application is basically the same in structure as the package body 100 of the first embodiment, the difference is that the low frequency shielding conductive structure 20 in the package body 200 of this embodiment is different from A complete conductive thin layer 40 is also disposed between the conformal shielding layers 70 .
  • the conductive thin layer 40 is embedded in the packaging material layer 50 .
  • the thickness of the conductive thin layer 40 can be arbitrary.
  • Above the conductive thin layer 40 is a conformal shielding layer 70 . In this way, the shielding efficiency can be further improved, and the manufacturing method of the package body 200 may be simpler than that of the first embodiment, for example, the low frequency shielding conductive structure 20 with the through holes 21 and the packaging material layer 50 need not be mechanically ground.
  • the package body 200 of this embodiment adds a complete conductive thin layer 40.
  • the existence of the conductive thin layer 40 can further lose the electromagnetic waves propagating upward, thereby further improving the low frequency electromagnetic shielding of the package body 100. efficacy.
  • the package body 300 of the third embodiment of the present application is basically the same in structure as the package body 100 of the first embodiment, except that the package body 300 in this embodiment is not provided with the conformal shielding layer 70 and Conductive partition wall 90 .
  • the cost of the process and materials caused by the provision of the common type shielding layer can be saved, and the low frequency shielding performance of the package body 100 can be ensured, but the high frequency shielding performance of the package body 300 is higher than that of the package body provided with the common type shielding layer 70 .
  • 100 is worse, but for the electronic components 30 with only low frequencies inside the package 300 , it is not necessary to consider the high frequency shielding performance, and only the low frequency shielding conductive structure 20 is required.
  • the package body 400 in the fourth embodiment of the present application is basically the same in structure as the package body 200 in the second embodiment, except that the package body 400 in this embodiment is not provided with the conformal shielding layer 70 and Conductive partition wall 90 .
  • the package body 400 of the fourth embodiment satisfies the shielding requirement of a package that only needs to perform low-frequency shielding, and reduces the complexity and difficulty of process implementation.
  • the present application also provides an electronic device (not shown in the figure), which includes at least one of the packages in the first embodiment to the fourth embodiment.
  • the present application further provides a method for preparing the above-mentioned package, which includes the following steps.
  • an initial package body As shown in FIG. 8A , an initial package body is provided, and the initial package body includes a substrate 10 , a plurality of electronic components 30 disposed on the substrate 10 , and a package on the substrate 10 .
  • the packaging material layers 50 of the plurality of electronic components 30 are described.
  • the plurality of electronic components 30 may include one or more passive devices, and may also include one or more active devices. Active components and passive components in the plurality of electronic components 30 include electronic components 30 with low frequency, and the range of the low frequency in this application is less than 10 MHz, for example, greater than or equal to 10 kHz and less than 10 MHz.
  • the packaging material layer 50 has a low dielectric constant, and the packaging material layer 50 completely covers the plurality of electronic components 30 .
  • a groove 55 is formed on the side of the packaging material layer 50 away from the substrate 10 , and at least a part of the groove 55 is in the shape of a mesh.
  • the manner of opening the grooves 55 may be laser grooving, but is not limited to laser grooving.
  • the depth of the trench 55 is not less than 10 ⁇ m, for example, greater than 10 ⁇ m and less than or equal to 100 ⁇ m.
  • the grooves 55 do not penetrate the packaging material layer 50 and are spaced apart from the plurality of electronic components 30 .
  • the encapsulation material layer 50 is provided with an area of the mesh portion of the groove 55 , which is divided into a plurality of cells (not shown) at intervals by the groove 55 , and the area of each cell is less than 1 mm*1 mm. It can be understood that when the groove 55 is formed, a slot 57 , which penetrates the packaging material layer 50 , can also be formed at the same time, and the slot 57 is used for accommodating the conductive partition wall 90 subsequently.
  • a conductive material is formed in the trench 55 to form the low frequency shielding conductive structure 20 .
  • the method of forming the low frequency shielding conductive structure 20 may be to pour conductive paste into the grooves 55, and then perform thermal curing. It can be understood that the slot 57 can also be filled with conductive paste and cured to form the conductive partition wall 90 at the same time.
  • the low frequency shielding conductive structure 20 and the encapsulation material layer 50 may also be ground to make them flush with the surfaces away from the substrate 10 .
  • a conformal shielding layer 70 is formed on the outer surface of the packaging material layer 50 , and the conformal shielding layer 70 is in contact with the low-frequency shielding conductive structure 20 .
  • the conformal shielding layer 70 is also in contact with the conductive partition wall 90 .
  • the conformal shielding layer 70 can be formed by a process such as sputtering or spraying to form a micron-scale conductive metal layer, generally a conductive metal layer with a thickness of not more than 10 microns. This step S4 can also be omitted as required.
  • the method may further include: before forming the conformal shielding layer 70 , forming a thin conductive layer on the surface of the low frequency shielding conductive structure 20 away from the substrate 10 .
  • a thin conductive layer on the surface of the low frequency shielding conductive structure 20 away from the substrate 10 .
  • a accommodating groove (not shown) for placing the conductive thin layer can be opened together, and then a conductive material can be formed in the trench 55 and the accommodating groove.

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Abstract

本申请提供一种封装体，包括：基板；多个电子元器件，设置于所述基板上；封装材料层，位于所述基板上且封装所述多个电子元器件；以及低频屏蔽导电结构，嵌设在所述封装材料层中，位于所述封装材料层远离所述基板的一侧且与所述多个电子元器件间隔，所述低频屏蔽导电结构具有多个通孔，至少部分通孔的每一个的开口面积小于1mm*1mm，所述低频屏蔽导电结构的厚度不低于10μm。本申请还提供应用该封装体的终端和电子设备、以及该封装体的制备方法。低频屏蔽导电结构的设置大幅提升了所述封装体的低频电磁辐射屏蔽效能。

Description

封装体及其制备方法、终端和电子设备 技术领域
本申请涉及一种具有低频电磁屏蔽效能的封装体、该封装体的制备方法以及应用该封装体的终端和电子设备。
背景技术
随着5G时代的到来，消费类移动终端产品(例如手机)的内部空间趋于紧张，为了提高硬件系统的集成度，目前业界广泛采用高集成度的封装方案，如系统级封装(System in package,SiP)，即将一些分立有源或无源器件模组化，并在封装体表面形成一层微米级的金属屏蔽层，即共形屏蔽(conformal shielding)，从而取代占用较多面积的传统屏蔽罩，进一步提升集成度。带共形屏蔽的封装需要有与传统屏蔽罩相当的屏蔽效能，其通过溅射或喷涂等工艺在封装体的顶部及侧面形成微米级的金属薄层，将电磁波束缚在封装体内部，极大地减小封装体内部向外辐射的电磁能量，从而使带共形屏蔽的模组的附近易受电磁干扰的敏感器件免受干扰。然而，低频电磁波(一般10MHz以下)由于在金属中的趋附深度大，导致微米级的金属屏蔽薄层对电磁波的吸收损耗小，导致共形屏蔽层在低频时屏蔽效能较低(共形屏蔽的屏蔽效能越大，代表屏蔽结构对封装内部向外辐射的电磁能量的抑制程度越大)。当前手机等终端设备中有许多SiP模组内部含有低频强干扰源，但现有的屏蔽结构对于低频电磁波的屏蔽效果十分有限，使得周围对低频敏感的器件易受干扰。
发明内容
本申请实施例第一方面提供了一种封装体，包括：
基板；
多个电子元器件，设置于所述基板上；
封装材料层，位于所述基板上且封装所述多个电子元器件；以及
低频屏蔽导电结构，嵌设在所述封装材料层中，所述低频屏蔽导电结构位于所述封装材料层远离所述基板的一侧且与所述多个电子元器件间隔，所述低频屏蔽导电结构具有多个通孔，至少部分通孔的每一个的开口面积小于1mm*1mm，所述低频屏蔽导电结构的厚度不低于10μm。
本申请具有多个微型的通孔的低频屏蔽导电结构能较好地屏蔽低频频段的电磁波，即不让电磁波从非导电区域(通孔)穿透出去；此外，为了保证低频(小于10MHz)的封装屏蔽效能，通过设置低频屏蔽导电结构的厚度不低于10μm，增大电磁波在低频屏蔽导电结构中的损耗程度，因此所述封装体整体呈现良好的低频电磁波的屏蔽效能。
本申请实施方式中，所述低频屏蔽导电结构的材质为具有电导率不低于5×10 6S/m或磁导率大于等于4π×10 -7H/m的导电材料。
所述高电导率和高磁导率的导电材料的选择能够进一步增大电磁波在低频屏蔽导电结构中的损耗程度。
本申请实施方式中，所述多个电子元器件包括发射低频电磁波的电子元器件，所述低频的范围小于10MHz；所述低频屏蔽导电结构至少覆盖所述发射低频电磁波的电子元器件，且覆盖所述发射低频电磁波的电子元器件的区域为网状的。
所述低频屏蔽结构不一定要铺满整个封装体的顶部区域，其设置的区域至少覆盖发射低频电磁波的电子元器件。
本申请实施方式中，所述低频屏蔽导电结构中覆盖所述发射低频电磁波的电子元器件的区域的每一个通孔的开口面积小于1mm*1mm。
通过设置通孔的开口尺寸，使波长较长的低频电磁波无法从所述低频屏蔽导电结构的非导电区域(通孔)穿透出去。
本申请实施方式中，所述低频屏蔽导电结构的多个通孔为阵列排布。
所述通孔的排布方式不限于阵列排布，还可为不规律的排布，通孔的形状也不限，只要保证所述低频屏蔽导电结构覆盖所述发射低频电磁波的电子元器件的区域为网状的。
本申请实施方式中，所述封装材料层的外表面上还设置有共形屏蔽层，所述共形屏蔽层为微米级的导电薄层；所述低频屏蔽导电结构与所述共形屏蔽层连接。
所述共形屏蔽层一般为厚度不高于10微米的导电金属层；所述共形屏蔽层主要用于高频电磁波(一般高于10MHz)的屏蔽。
本申请实施方式中，所述低频屏蔽导电结构与所述共形屏蔽层之间还设置有一完整的导电薄层。
通过增加一层完整的导电薄层，可进一步提升封装体的低频电磁屏蔽效能。
本申请实施方式中，所述封装材料层中还嵌设有接地的导电隔墙，以将所述封装体分成至少两个腔室，从而减弱电磁波在不同腔室之间的耦合。
所述导电隔墙贯穿所述封装材料层，一端连接所述基板，以将所述封装体分成至少两个腔室，从而电磁波在腔室之间的耦合会大幅减弱，进而实现封装体的内部电子元器件之间的屏蔽。
本申请实施方式中，所述低频屏蔽导电结构远离所述基板的表面上覆盖有一完整的导电薄层。
通过增加一层完整的导电薄层，可进一步提升封装体的低频电磁屏蔽效能。
本申请实施例第二方面提供了一种封装体的制备方法，包括：
提供初始的封装体，所述初始的封装体包括基板、设置于所述基板上的多个电子元器件、以及位于所述基板上且封装所述多个电子元器件的封装材 料层；
在所述封装材料层远离所述基板的一侧开设沟槽，所述沟槽的至少部分为呈网状，所述沟槽的深度不低于10μm且所述沟槽与所述多个电子元器件相间隔，所述沟槽的网状部分将所述封装材料层划分为间隔的多个单元，每一个单元的面积小于1mm*1mm；以及
在所述沟槽中形成导电材料以形成低频屏蔽导电结构。
所述封装体的制备方法工艺简单，较易实现。
本申请实施方式中，所述制备方法还包括在所述封装材料层的外表面形成共形屏蔽层，该共形屏蔽层与所述低频屏蔽导电结构接触。
所述共形屏蔽层一般为厚度不高于10微米的导电金属层；所述共形屏蔽层主要用于高频电磁波(一般高于10MHz)的屏蔽。
本申请实施方式中，所述制备方法还包括在所述低频屏蔽导电结构远离所述基板的表面形成导电薄层。
通过增加一层完整的导电薄层，可进一步提升封装体的低频电磁屏蔽效能。
本申请实施方式中，在所述沟槽中形成的所述导电材料具有电导率不低于5×10 6S/m且磁导率大于等于4π×10 -7H/m。
所述高电导率和高磁导率的导电材料的选择能够进一步增大电磁波在低频屏蔽导电结构中的损耗程度。
本申请实施方式中，所述多个电子元器件包括发射低频电磁波的电子元器件，所述低频的范围小于10MHz，所述低频屏蔽导电结构至少覆盖所述发射低频电磁波的电子元器件，且所述低频屏蔽导电结构覆盖所述发射低频电磁波的电子元器件的区域为网状的；所述低频屏蔽导电结构的网状部分的每一个通孔的开口面积小于1mm*1mm。
所述低频屏蔽结构不一定要铺满整个封装体的顶部区域，其设置的区域至少覆盖发射低频电磁波的电子元器件。
本申请实施例第三方面提供了一种终端，包括壳体以及容置于所述壳体内的封装体，所述封装体为上述的封装体。
本申请实施例第四方面提供了一种电子设备，包括上述的封装体。
通过低频屏蔽导电结构的设置有效屏蔽低频电磁波，本申请的终端和电子设备可实现有效防止对低频敏感的器件受到低频电磁波的干扰，从而具有良好的使用效果。
附图说明
图1是本申请实施例一的封装体和对低频电磁波敏感的器件相邻设置的剖面示意图。
图2是图1的低频屏蔽导电结构和导电隔墙的俯视示意图。
图3是低频屏蔽导电结构的几种形状示意图。
图4A和图4B分别是变更实施例的封装体的俯视和剖面示意图。
图5是本申请实施例二的封装体的剖面示意图。
图6是本申请实施例三的封装体的剖面示意图。
图7是本申请实施例四的封装体的剖面示意图。
图8A至图8D是制备实施例一的封装体的剖面示意图。
主要元件符号说明
封装体                         100、200、300、400
基板                           10
电子元器件                     30
封装材料层                     50
对低频电磁波敏感的器件         60
低频屏蔽导电结构               20
通孔                           21
较大的通孔                     25
共形屏蔽层                     70
顶面                           51
侧面                           53
沟槽                           55
狭槽                           57
导电隔墙                       90
导电薄层                       40
具体实施方式
下面结合本申请实施例中的附图对本申请实施例进行描述。
实施例一
一种终端(图未示)，包括壳体(图未示)以及位于所述壳体内的封装体100。所述终端可为手机、平板电脑等电子装置。
参阅图1，所述封装体100包括基板10、设置于所述基板10上的多个电子元器件30、以及位于所述基板10上且封装所述多个电子元器件30的封装材料层50。
所述多个电子元器件30可包括一颗或多颗无源器件，无源器件包括但不限于电阻、电容、电感、滤波器、耦合器等。所述多个电子元器件30还可包括一颗或多颗有源器件，例如有源芯片，包括但不限于电源芯片、数字芯片、射频芯片等。所述多个电子元器件30中的有源器件和无源器件中包括发射低频电磁波的电子元器件30，本申请中所述“低频”是指频率小于10MHz，例如大于等于10kHz且小于10MHz。所述封装材料层50具有低的介电常数，且完全包覆所述多个电子元器件30。
如图1所示，所述壳体内且所述封装体100的旁边设置有对低频电磁波 敏感的器件60，例如近场通信(Near field communication，NFC)芯片。然而，现有的封装体对于低频电磁波(一般10MHz以下)的屏蔽效果十分有限，使得周围对低频电磁波敏感的器件60易受干扰。例如，本实施例中，当外界与NFC芯片通信时，由于低频的电子元器件30与NFC芯片摆放较近，使得低频的电子元器件30内的低频噪声通过封装体100的内部空间辐射干扰到NFC芯片，从而恶化了NFC通信的性能。因此，本申请在所述封装体100中设置一种低频屏蔽导电结构20，所述低频屏蔽导电结构20能够有效屏蔽低频电磁波，从而防止对低频电磁波敏感的器件60受到低频电磁波的干扰。
如图1所示，所述低频屏蔽导电结构20嵌设在所述封装材料层50中，所述低频屏蔽导电结构20位于所述封装材料层50远离所述基板10的一侧且与所述多个电子元器件30间隔。所述低频屏蔽导电结构20远离所述基板10的表面相对所述封装材料层50露出。所述低频屏蔽导电结构20的至少部分为网状，网状的部分具有多个通孔21。结合参阅图2，所述低频屏蔽导电结构20整体为网状；所述低频屏蔽导电结构20具有多个通孔21。本实施例中，所述多个通孔21呈矩阵排布，每一个通孔21的开口面积小于1mm*1mm。所述低频屏蔽导电结构20的厚度不低于10μm，例如大于10μm且小于等于100μm。由于所述低频屏蔽导电结构20本身嵌设在所述封装材料层50中，所以每一个通孔21中填充了所述封装材料层50的封装材料。
所述低频屏蔽导电结构20的材质为具有高电导率(电导率不低于5×10 6S/m)或高磁导率(磁导率大于等于4π×10 -7H/m)的导电材料，例如金属铜。
所述低频屏蔽导电结构20的低频屏蔽原理介绍如下：低频(10kHz-10MHz)电磁波的波长较长(30m-30000m)，而所述低频屏蔽导电结构20的通孔21设置较小，低频电磁波无法从非导电区域(通孔21区域)中穿透出去。此外，为了保证低频(10kHz-10MHz)的封装屏蔽效能，需通过增大电磁波在导电结构中的损耗程度。
损耗程度＝衰减因子×导电结构厚度                         (1)
衰减因子＝1/趋附深度                                    (2)
趋附深度＝(2/(角频率*磁导率*电导率)) 0.5                  (3)
基于公式(1)，除了增大衰减因子，还可通过增大低频屏蔽导电结构20的厚度，来增大损耗程度，因此建议低频屏蔽导电结构20厚度不低于10μm。
此外，为了增大衰减因子，即减小趋附深度，所述低频屏蔽导电结构20的材料需选择高电导率(电导率不低于5×10 6S/m)、高磁导率(磁导率大于等于4π×10 -7H/m)的导电材料。
所述低频屏蔽导电结构20能够较大地损耗来自其下方的电子元器件30的低频电磁噪声，从而显著提升了封装体100的电磁辐射的屏蔽效能。
所述低频屏蔽导电结构20不一定要铺满整个封装体100的顶部区域，其设置的区域与低频噪声源的位置有关。需在低频的电子元器件的投影区域以及附近区域设置所述低频屏蔽导电结构20，保证低频的电子元器件30发射 的低频电磁波透射到封装材料层50上方后能被所述低频屏蔽导电结构20拦截。所述低频屏蔽导电结构20的设置位置至少覆盖所述低频的电子元器件30，且覆盖所述低频的电子元器件30的区域为网状的，且该网状区域的每一个通孔21的开口面积小于1mm*1mm。
如图2所示，所述低频屏蔽导电结构20的每一个通孔21为正方形，且所述多个通孔21呈阵列排布。所述通孔21的形状不限，还可以为其他的形状，图3示出了几种不同形状的低频屏蔽导电结构20，通孔21的形状还可为矩形、三角形、或其他的不规则的形状。
所述多个通孔21排布可为规则的均匀排布，如图3所示的阵列排布。其他实施例中，如图4A所示，所述多个通孔21排布也可为不均匀的排布。如图4A所示，所述多个通孔21中具有一个较大的通孔25(空白区域)，其余的各个通孔21的面积相等且均小于1mm*1mm，如图4B所示，该较大的通孔25正对一个电子元器件30，该电子元器件30的高度较其他电子元器件30的高度大且不是低频的电子元器件，且该较大的通孔25的面积大于所述电子元器件30的横截面以供所述电子元器件30穿过该较大的通孔25。即，该电子元器件30所正对的区域不设置所述低频屏蔽导电结构20的网状的部分，而是空白的，如此设置，即使所述封装体100局部区域中的电子元器件30高度较高，也不会由于所述低频屏蔽导电结构20的引入导致所述封装体100的整体高度增加。
如图1所示，所述封装材料层50的外表面上还设置有共形屏蔽层70，所述低频屏蔽导电结构20与所述共形屏蔽层70直接接触连接。所述封装材料层50包括远离所述基板10的顶面51以及连接所述顶面51的多个侧面53。所述共形屏蔽层70完全覆盖所述顶面51和所述多个侧面53，并沿所述侧面53延伸覆盖所述基板10与所述侧面53共面的表面。所述共形屏蔽层70为微米级的导电金属层，一般为厚度不高于10微米的导电金属层。所述共形屏蔽层70主要用于高频电磁波(一般高于10MHz)的屏蔽。
如图1所示，所述低频屏蔽导电结构20与所述封装材料层50的顶面51为平齐的，如此可较好的实现所述低频屏蔽导电结构20与所述共形屏蔽层70的连接。
所述低频屏蔽导电结构20远离所述基板10的表面与所述共形屏蔽层70接触，所述低频屏蔽导电结构20还可延伸到所述封装体100的边缘与覆盖侧面53的所述共形屏蔽层70的部分接触，也可以不延伸到封装体100边缘使得不与覆盖侧面53的所述共形屏蔽层70的部分接触。
此外，为了保证所述封装体100的内部的电子元器件30之间不产生相互干扰，会采用分腔屏蔽(compartment shielding)的技术，如图1所示，所述封装材料层50中还可嵌设接地的导电隔墙90，以将所述封装体100分成至少两个腔室，从而电磁波在腔室之间的耦合会大幅减弱，进而实现封装体100的内部电子元器件30之间的屏蔽。所述导电隔墙90一端连接所述共形屏蔽层70，另一端连接所述基板10。
下面对本申请的两组实验例1-2和两组对比例1-2，进行了屏蔽效能的模拟测试，测试结果如下表一所示。其中对比例1为厚度为3μm的共形屏蔽层70，实验例1不仅设置有厚度为3μm的共形屏蔽层70还设置有低频屏蔽导电结构20(厚度为50μm，通孔21为边长为0.5mm的正方形)，对比例1与实验例1的其它条件相同。对比例2为厚度为9μm的共形屏蔽层70，实验例2不仅设置有厚度为9μm的共形屏蔽层70还设置有低频屏蔽导电结构20(厚度为50μm，通孔21为边长为0.5mm的正方形)，对比例2与实验例2的其它条件相同。
表一
Figure PCTCN2021120376-appb-000001
由表一可知：在1MHz频率下，3μm厚的共形屏蔽层的屏蔽效能只有2dB，而9μm厚的共形屏蔽层的屏蔽效能只有5.5dB，而加入低频屏蔽导电结构后屏蔽效能可分别提升12.5dB和13.5dB。而在10MHz频率下，3μm的共形屏蔽层的屏蔽效能只有13dB，而9μm厚的共形屏蔽层的屏蔽效能只有24dB，而加入低频屏蔽导电结构后屏蔽效能可分别提升17dB和10dB。
本实施例的封装体100通过在顶部设置具有多个通孔21的低频屏蔽导电结构20并与共形屏蔽层70相连接，从而大幅提升低频电磁辐射屏蔽效能。此外，所述低频屏蔽导电结构20还可在一定程度上辅助增加高频电磁辐射的屏蔽效能。
实施例二
请参阅图5，本申请实施例二的封装体200，其与实施例一中的封装体100的结构基本一致，区别在于：本实施例中的封装体200中所述低频屏蔽导电结构20与所述共形屏蔽层70之间还设置有一完整的导电薄层40。
该导电薄层40嵌设在所述封装材料层50中。该导电薄层40的厚度可以是任意的。所述导电薄层40的上方为共形屏蔽层70。这样可以进一步提升屏蔽效能，并且该封装体200的制备方法可能比实施例一更为简单，例如无需对具有通孔21的低频屏蔽导电结构20及封装材料层50进行机械研磨。
与实施例一相比，本实施例的封装体200通过增加一层完整的导电薄层40，该导电薄层40的存在可进一步损耗向上传播的电磁波，从而进一步提升封装体100的低频电磁屏蔽效能。
实施例三
请参阅图6，本申请实施例三的封装体300，其与实施例一中的封装体100的结构基本一致，区别在于：本实施例中的封装体300中未设置共形屏蔽层70和导电隔墙90。
如此可节约设置共型屏蔽层所带来的工艺与材料的成本，又可保证封装体100实现低频屏蔽性能，但封装体300的高频屏蔽性能会较设置有共型屏蔽层70的封装体100更差，但对于封装体300的内部只有低频的电子元器件30，无需考虑高频的屏蔽性能，仅设置低频屏蔽导电结构20即可。
实施例四
请参阅图7，本申请实施例四的封装体400，其与实施例二中的封装体200的结构基本一致，区别在于：本实施例中的封装体400中未设置共形屏蔽层70和导电隔墙90。
实施例四的封装体400满足了只需进行低频屏蔽的封装的屏蔽需求，并降低了工艺实现复杂度与难度。
本申请还提供一种电子设备(图未示)，其包括上述实施例一至实施例四中至少一种封装体。
请参阅图8，本申请还提供上述封装体的制备方法，其包括如下步骤。
S 1：如图8A所示，提供初始的封装体，所述初始的封装体包括基板10、设置于所述基板10上的多个电子元器件30、以及位于所述基板10上且封装所述多个电子元器件30的封装材料层50。
所述多个电子元器件30可包括一颗或多颗无源器件，还可包括一颗或多颗有源器件。所述多个电子元器件30中的有源器件和无源器件中包括有低频的电子元器件30，本申请中所述低频的范围为小于10MHz，例如大于等于10kHz且小于10MHz。所述封装材料层50具有低的介电常数，封装材料层50完全包覆所述多个电子元器件30。
S2：如图8A所示，在所述封装材料层50远离所述基板10的一侧开设沟槽55，所述沟槽55的至少部分呈网状。
开设所述沟槽55的方式可为激光开槽，但不限于激光开槽。所述沟槽55的深度不低于10μm，例如大于10μm且小于等于100μm。所述沟槽55并未贯穿所述封装材料层50且与所述多个电子元器件30相间隔。所述封装材料层50设置有所述沟槽55的网状部分的区域，被所述沟槽55划分为间隔的多个单元(图未示)，每一个单元的面积小于1mm*1mm。可以理解的，形成沟槽55的同时还可一并形成贯穿所述封装材料层50的狭槽57，狭槽57用以后续容置导电隔墙90。
S3：如图8B所示，在所述沟槽55中形成导电材料以形成低频屏蔽导电结构20。
形成所述低频屏蔽导电结构20的方式可在所述沟槽55中灌入导电浆料，再进行热固化。可以理解的，所述狭槽57中也可同时被灌入导电浆料并固化形成导电隔墙90。
固化后，如图8C所示，还可对所述低频屏蔽导电结构20和所述封装材料层50进行研磨使其二者远离所述基板10的表面平齐。
S4：如图8D所示，在所述封装材料层50的外表面形成共形屏蔽层70，该共形屏蔽层70与所述低频屏蔽导电结构20接触。
所述共形屏蔽层70也与所述导电隔墙90接触。形成所述共形屏蔽层70的方式可为溅射或喷涂等工艺形成一层微米级的导电金属层，一般为厚度不高于10微米的导电金属层。该步骤S4也可以根据需要进行省略。
可以理解的，所述方法还可包括：在形成所述共形屏蔽层70之前，在所述低频屏蔽导电结构20远离所述基板10的表面形成导电薄层。例如，可在封装材料层50开设沟槽55的时候一并将放置导电薄层的容置槽(图未示)开设好，然后再在沟槽55和容置槽中一并形成导电材料形成所述低频屏蔽导电结构20和导电薄层。
需要说明的是，以上仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请的保护范围之内；在不冲突的情况下，本申请的实施方式及实施方式中的特征可以相互组合。因此，本申请的保护范围应以权利要求的保护范围为准。

Claims (16)

  1. 一种封装体，其特征在于，包括：
    基板；
    多个电子元器件，设置于所述基板上；
    封装材料层，位于所述基板上且封装所述多个电子元器件；以及
    低频屏蔽导电结构，嵌设在所述封装材料层中，所述低频屏蔽导电结构位于所述封装材料层远离所述基板的一侧且与所述多个电子元器件间隔，所述低频屏蔽导电结构具有多个通孔，至少部分通孔的每一个的开口面积小于1mm*1mm，所述低频屏蔽导电结构的厚度不低于10μm。
  2. 根据权利要求1所述的封装体，其特征在于，所述低频屏蔽导电结构的材质为具有电导率不低于5×10 6S/m或磁导率大于等于4π×10 -7H/m的导电材料。
  3. 根据权利要求1所述的封装体，其特征在于，所述多个电子元器件包括发射低频电磁波的电子元器件，所述低频的范围小于10MHz；所述低频屏蔽导电结构至少覆盖所述发射低频电磁波的电子元器件，且覆盖所述发射低频电磁波的电子元器件的区域为网状的。
  4. 根据权利要求3所述的封装体，其特征在于，所述低频屏蔽导电结构中覆盖所述发射低频电磁波的电子元器件的区域的每一个通孔的开口面积小于1mm*1mm。
  5. 根据权利要求1所述的封装体，其特征在于，所述低频屏蔽导电结构的多个通孔为阵列排布。
  6. 根据权利要求1所述的封装体，其特征在于，所述封装材料层的外表面上还设置有共形屏蔽层，所述共形屏蔽层为微米级的导电薄层；所述低频屏蔽导电结构与所述共形屏蔽层连接。
  7. 根据权利要求6所述的封装体，其特征在于，所述低频屏蔽导电结构与所述共形屏蔽层之间还设置有一完整的导电薄层。
  8. 根据权利要求1所述的封装体，其特征在于，所述封装材料层中还嵌设有接地的导电隔墙，以将所述封装体分成至少两个腔室，从而减弱电磁波在不同腔室之间的耦合。
  9. 根据权利要求1所述的封装体，其特征在于，所述低频屏蔽导电结构远离所述基板的表面上覆盖有一完整的导电薄层。
  10. 一种封装体的制备方法，其特征在于，包括：
    提供初始的封装体，所述初始的封装体包括基板、设置于所述基板上的多个电子元器件、以及位于所述基板上且封装所述多个电子元器件的封装材料层；
    在所述封装材料层远离所述基板的一侧开设沟槽，所述沟槽的至少部分为呈网状，所述沟槽的深度不低于10μm且所述沟槽与所述多个电子元器件 相间隔，所述沟槽的网状部分将所述封装材料层划分为间隔的多个单元，每一个单元的面积小于1mm*1mm；以及
    在所述沟槽中形成导电材料以形成低频屏蔽导电结构。
  11. 根据权利要求10所述的封装体的制备方法，其特征在于，所述制备方法还包括在所述封装材料层的外表面形成共形屏蔽层，该共形屏蔽层与所述低频屏蔽导电结构接触。
  12. 根据权利要求10所述的封装体的制备方法，其特征在于，所述制备方法还包括在所述低频屏蔽导电结构远离所述基板的表面形成导电薄层。
  13. 根据权利要求10所述的封装体的制备方法，其特征在于，在所述沟槽中形成的所述导电材料具有电导率不低于5×10 6S/m或磁导率大于等于4π×10 -7H/m。
  14. 根据权利要求10所述的封装体的制备方法，其特征在于，所述多个电子元器件包括发射低频电磁波的电子元器件，所述低频的范围小于10MHz，所述低频屏蔽导电结构至少覆盖所述发射低频电磁波的电子元器件，且所述低频屏蔽导电结构覆盖所述发射低频电磁波的电子元器件的区域为网状的；所述低频屏蔽导电结构的网状部分的每一个通孔的开口面积小于1mm*1mm。
  15. 一种终端，其特征在于，包括壳体以及容置于所述壳体内的封装体，所述封装体为权利要求1至9中任一项所述的封装体。
  16. 一种电子设备，其特征在于，包括权利要求1至9中任一项所述的封装体。
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