WO2022052293A1 - 基板和基板的制备方法 - Google Patents

基板和基板的制备方法 Download PDF

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Publication number
WO2022052293A1
WO2022052293A1 PCT/CN2020/128634 CN2020128634W WO2022052293A1 WO 2022052293 A1 WO2022052293 A1 WO 2022052293A1 CN 2020128634 W CN2020128634 W CN 2020128634W WO 2022052293 A1 WO2022052293 A1 WO 2022052293A1
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WIPO (PCT)
Prior art keywords
substrate
light
emitting device
scratch
layer
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Application number
PCT/CN2020/128634
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English (en)
French (fr)
Inventor
刘巍巍
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Tcl华星光电技术有限公司
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Publication date
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Priority to US17/252,156 priority Critical patent/US20220320383A1/en
Publication of WO2022052293A1 publication Critical patent/WO2022052293A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Definitions

  • the present application relates to the field of display technology, and in particular, to a substrate and a method for preparing the substrate.
  • the preparation process of the Mini LED substrate it is necessary to print the solder paste at the binding terminals of the Mini LED first, and then the Mini LED The LEDs are fixed on the solder paste.
  • a squeegee is set on each of the opposite sides of the substrate, and then the two squeegees alternately print the entire surface of the substrate through the steel mesh.
  • the excessive pressure of the squeegee the The contact force between the mesh and the substrate is large, which often causes the circuit on the substrate to be crushed and short-circuited, which affects the use effect of the substrate.
  • the existing Mini LED substrate has the technical problem that the circuit is easily crushed, and needs to be improved.
  • Embodiments of the present application provide a substrate and a method for preparing the substrate, so as to alleviate the technical problem that the circuit in the existing Mini LED substrate is easily crushed.
  • the present application provides a method for preparing a substrate, comprising:
  • a light-emitting device binding terminal and a pixel driving circuit for driving the light-emitting device to emit light are prepared on one side of the substrate, the light-emitting device binding terminal is located in the light-emitting device binding area of the substrate, and the pixel driving circuit is located in the light-emitting device binding area of the substrate.
  • the drive circuit area In the drive circuit area;
  • a scratch-resistant layer is formed on the side of the light-emitting device binding terminal away from the substrate, the scratch-resistant layer covers the pixel driving circuit, and the scratch-resistant layer is patterned to expose the light-emitting device binding The first via of the terminal;
  • the anti-scratch layer is peeled off, and the light-emitting device is bound to the binding terminal of the light-emitting device through the solder paste.
  • the scratch-resistant layer includes at least one of inorganic materials, organic composite materials, organic-inorganic composite materials, and metal materials with a melting point lower than a threshold.
  • the scratch-resistant layer includes a positive photosensitive material or a negative photosensitive material.
  • the anti-scratch layer includes photosensitive polyimide.
  • the step of peeling off the scratch-resistant layer includes: using an excimer laser as a light source to irradiate the scratch-resistant layer to peel off the scratch-resistant layer.
  • the step of forming an anti-scratch layer on the side of the light-emitting device binding terminal away from the substrate includes: forming an anti-scratch layer with a thickness greater than 3 microns.
  • the step of preparing a binding terminal of a light-emitting device and a pixel driving circuit for driving the light-emitting device to emit light on one side of the substrate includes: sequentially forming a first metal layer, A gate insulating layer, an active layer and a second metal layer, the first metal layer is patterned to form gates of transistors in the pixel driving circuit, and the second metal layer is patterned to form the binding terminals of the light-emitting device and the source and drain of each transistor.
  • the method before the step of forming the scratch-resistant layer on the side of the light-emitting device binding terminal away from the substrate, the method further includes: forming a chip binding area in the chip binding area of the substrate fixed terminal.
  • the light-emitting device includes Mini LED or Micro LED LED.
  • the present application also provides a substrate, which is made by using any one of the above-mentioned methods for preparing a substrate.
  • the present application also provides a method for preparing a substrate, comprising:
  • a light-emitting device binding terminal and a pixel driving circuit for driving the light-emitting device to emit light are prepared on one side of the substrate, the light-emitting device binding terminal is located in the light-emitting device binding area of the substrate, and the pixel driving circuit is located in the light-emitting device binding area of the substrate.
  • the drive circuit area In the drive circuit area;
  • a reflective layer and an anti-scratch layer are sequentially formed on the side of the light-emitting device binding terminal away from the substrate, the anti-scratch layer covers the pixel driving circuit, and the anti-scratch layer is patterned to expose the the first via hole of the binding terminal of the light-emitting device;
  • the anti-scratch layer is peeled off, and the light-emitting device is bound to the binding terminal of the light-emitting device through the solder paste.
  • the scratch-resistant layer includes at least one of inorganic materials, organic composite materials, organic-inorganic composite materials, and metal materials with a melting point lower than a threshold.
  • the scratch-resistant layer includes a positive photosensitive material or a negative photosensitive material.
  • the anti-scratch layer includes photosensitive polyimide.
  • the step of peeling off the scratch-resistant layer includes: using an excimer laser as a light source to irradiate the scratch-resistant layer to peel off the scratch-resistant layer.
  • the step of preparing a binding terminal of a light-emitting device and a pixel driving circuit for driving the light-emitting device to emit light on one side of the substrate includes: sequentially forming a first metal layer, A gate insulating layer, an active layer and a second metal layer, the first metal layer is patterned to form gates of transistors in the pixel driving circuit, and the second metal layer is patterned to form the binding terminals of the light-emitting device and the source and drain of each transistor.
  • the method before the step of forming the scratch-resistant layer on the side of the light-emitting device binding terminal away from the substrate, the method further includes: forming a chip binding area in the chip binding area of the substrate fixed terminal.
  • the light-emitting device includes Mini LED or Micro LED LED.
  • a scratch-resistant layer is formed on the side of the light-emitting device binding terminal away from the substrate, and the scratch-resistant layer covers the pixel driving circuit, including: on the An anti-scratch layer is formed on a side of the light-emitting device binding terminal away from the substrate, and the anti-scratch layer extends to cover the area where the substrate is located.
  • the step of peeling off the anti-scratch layer includes: removing the anti-scratch layer by using a dry etching process.
  • the present application provides a substrate and a method for preparing the substrate, the preparation method comprising: providing a substrate; preparing a light-emitting device binding terminal and a pixel driving circuit for driving the light-emitting device to emit light on one side of the substrate,
  • the light-emitting device binding terminal is located in the light-emitting device binding area of the substrate, and the pixel driving circuit is located in the driving circuit area of the substrate; a shield is formed on the side of the light-emitting device binding terminal away from the substrate.
  • a scratch layer the scratch-resistant layer covers the pixel driving circuit, and a first via hole for exposing the binding terminal of the light-emitting device is formed by patterning in the scratch-resistant layer; Filling solder paste in the hole; peeling off the anti-scratch layer, and binding the light-emitting device to the binding terminal of the light-emitting device through the solder paste.
  • a scratch-resistant layer is formed first, so that each signal line forming the pixel driving circuit in the driving circuit area of the substrate will not be crushed during screen printing. The layer is peeled off to prevent the circuit on the substrate from being crushed without affecting the performance of the substrate.
  • FIG. 1 is a schematic flowchart of a method for preparing a substrate provided in an embodiment of the present application.
  • FIG. 2 is a schematic plan view of a substrate provided by an embodiment of the present application.
  • FIG. 3 is a schematic diagram of the first stage of the manufacturing method of the substrate provided by the embodiment of the present application.
  • FIG. 4 is a schematic diagram of the second stage of the manufacturing method of the substrate provided by the embodiment of the present application.
  • FIG. 5 is a schematic diagram of the third stage of the manufacturing method of the substrate provided by the embodiment of the present application.
  • FIG. 6 is a schematic diagram of the fourth stage of the manufacturing method of the substrate provided by the embodiment of the present application.
  • FIG. 7 is a schematic diagram of the fifth stage of the manufacturing method of the substrate provided by the embodiment of the present application.
  • FIG. 8 is a schematic diagram of a sixth stage of the method for preparing the substrate provided by the embodiment of the present application.
  • FIG. 9 is a schematic diagram of a seventh stage of the method for fabricating the substrate provided by the embodiment of the present application.
  • FIG. 10 is a schematic diagram of the eighth stage of the manufacturing method of the substrate provided by the embodiment of the present application.
  • FIG. 11 is a schematic structural diagram of a backlight module provided by an embodiment of the present application.
  • Embodiments of the present application provide a substrate and a method for preparing the substrate, so as to alleviate the technical problem that the circuit in the existing Mini LED substrate is easily crushed.
  • the present application provides a method for preparing a substrate, including:
  • S102 preparing a light-emitting device binding terminal and a pixel driving circuit for driving the light-emitting device to emit light on one side of the substrate, the light-emitting device binding terminal is located in the light-emitting device binding area of the substrate, and the pixel driving circuit is located in the driving circuit area of the substrate;
  • S103 forming a scratch-resistant layer on the side of the light-emitting device binding terminal away from the substrate, the scratch-resistant layer covering the pixel driving circuit, and patterning the scratch-resistant layer to form a first via hole exposing the light-emitting device binding terminal;
  • S104 Fill the first via hole with solder paste by screen printing
  • S105 peel off the scratch-resistant layer, and bind the light-emitting device to the binding terminal of the light-emitting device through solder paste.
  • the substrate includes a chip binding area (not shown), a driving circuit area 200 and a light emitting device binding area 300 .
  • a plurality of light-emitting device binding regions 300 arranged in an array are arranged on the substrate, and a light-emitting device binding terminal 162 is formed in each light-emitting device binding region 300, wherein the light-emitting device binding terminal 162 includes a first binding portion 1621 and a For the second binding portion 1622, after the light-emitting device binding terminal 162 is formed, the first via hole between the first binding portion 1621 and the second binding portion 1622 is filled through a steel mesh through a screen printing method.
  • the light emitting device is bound to the light emitting device binding terminal 162 through the solder paste, so as to realize the fixation with the substrate.
  • a corresponding pixel driving circuit is provided to drive the light-emitting device to emit light.
  • the pixel driving circuit is arranged in the driving circuit area 200, and the driving circuit area 200 is adjacent to the light-emitting device binding area 300, and is also in the substrate.
  • Array arrangement is located at the edge area of the substrate, and a driving chip is arranged in the chip binding area, which is used for providing electrical signals to each pixel driving circuit, so as to make the pixel driving circuit work to drive the light emitting device to emit light.
  • the substrate includes a substrate, a first metal layer, a gate insulating layer, an active layer and a second metal layer from bottom to top. For convenience of representation, only the first metal layer and the second metal layer are shown in FIG. 2 .
  • a metal layer is patterned to form a plurality of signal lines, including a first scan line 51 , a second scan line 52 , a third scan line 53 , a fourth scan line 54 and the first electrode plate 55 of the storage capacitor.
  • the second metal layer It is also patterned to form a plurality of signal lines, including a first data line 61, a power high potential signal line 62, a second data line 63, a sensing line 64, a third data line 65, a power high potential signal line 66 and a storage capacitor.
  • the second electrode plate 67 and, in addition, the second metal layer forms the light emitting device binding terminal 162 in the light emitting device binding region 300 .
  • the projections of each signal line formed by the first metal layer and each signal line formed by the second metal layer on the substrate have multiple overlapping areas, and the thickness of the overlapping area is larger than that of other areas.
  • a scratch-resistant layer is formed before the solder paste is filled, so that each signal line forming the pixel driving circuit in the driving circuit area of the substrate will not be crushed during screen printing.
  • the anti-scratch layer is The scraping layer is peeled off to prevent the circuit on the substrate from being crushed without affecting the performance of the substrate.
  • FIG. 3 and FIG. 10 are schematic diagrams of the film layer structure along the section A-A in FIG. 2 .
  • the substrate provided by the embodiment of the present application includes a chip bonding area 100 , a driving circuit area 200 , and a light emitting device bonding area 300 .
  • the substrate 11 may be a flexible substrate or a rigid substrate, such as glass, and the present application does not limit the material of the substrate 11 .
  • a light-emitting device binding terminal and a pixel driving circuit for driving the light-emitting device to emit light are prepared on the substrate side, the light-emitting device binding terminal is located in the light-emitting device binding area of the substrate, and the pixel driving circuit is located in the driving circuit area of the substrate .
  • This embodiment is described by taking a thin film transistor with a bottom gate structure formed on the substrate in the driving circuit region 200 as an example.
  • a first metal layer, a gate insulating layer 13 and an active layer 14 are sequentially prepared on the substrate 11 , the ohmic contact layer 15 and the second metal layer 16 .
  • a barrier layer and a buffer layer are usually provided between the substrate 11 and the first metal layer.
  • the material of the barrier layer is generally silicon oxide (SiOx), which is used to block external impurity particles from entering the substrate. 11.
  • the buffer layer is generally made of silicon nitride (SiNx). Silicon nitride has strong ion blocking ability and good water and oxygen isolation ability, which can effectively prevent impurities from diffusing into the thin film transistor during the thermal process.
  • the first metal layer is formed on the substrate 11, and the gate electrode 123 of the thin film transistor is formed by patterning in the driving circuit region 200, the first conductive member 121 is patterned in the chip bonding region 100, and the light emitting device bonding region is formed by patterning.
  • a second conductive member (not shown in the figure) is formed by patterning in 300, and the first conductive member 121 and the second conductive member may be various types of signal lines formed in the first metal layer.
  • the material of the first metal layer includes at least one of copper, molybdenum-copper alloy and molybdenum-aluminum alloy.
  • the gate insulating layer 13 is formed on the first metal layer, and the material of the gate insulating layer 13 is generally at least one of silicon nitride (SiNx) and silicon oxide (SiOx), and may be a single-layer or multi-layer structure.
  • the active layer 14 is formed on the gate insulating layer 13, and the active layer 14 may be an amorphous silicon material, a polysilicon (a-Si) material, or a metal oxide semiconductor material, etc., wherein the metal oxide semiconductor may include indium tin oxide, indium At least one of gallium zinc oxide, indium zinc tin oxide, and indium gallium zinc tin oxide.
  • the ohmic contact layer 15 is formed on the active layer 14
  • the second metal layer 16 is formed on the ohmic contact layer 15 .
  • the material of the second metal layer 16 includes at least one of copper, molybdenum-copper alloy, and molybdenum-aluminum alloy.
  • the active layer 14 , the ohmic contact layer 15 and the second metal layer 16 are patterned.
  • the active layer 14 includes three parts formed in the chip bonding region 100, the driving circuit region 200 and the light emitting device bonding region 300, respectively, wherein the part located in the driving circuit region 200 includes N-type impurity ions or P-type impurity ions by doping.
  • the ohmic contact layer 15 includes three parts respectively formed in the chip bonding region 100 , the driving circuit region 200 and the light emitting device bonding region 300 , wherein the part in the driving circuit region 200 is respectively formed in the source region of the active layer 14 and drain region.
  • the second metal layer 16 is patterned in the driving circuit region 200 to form the source electrode 163 and the drain electrode 164 of the thin film transistor, patterned in the chip bonding region 100 to form the chip bonding terminal 161 , and patterned in the light emitting device bonding region 300 A light-emitting device bonding terminal 162 is formed, the source electrode 163 and the drain electrode 164 are respectively connected to the source region and the drain region of the active layer 14 , and the chip bonding terminal 161 is connected to the first conductive member 121 through a via hole.
  • the chip bonding terminal 161 is formed in the chip bonding area 100 of the substrate, the driving circuit is formed in the driving circuit area 200 of the substrate, and the light emitting device bonding area 300 is formed in the substrate. Terminal 162.
  • the above embodiment is described with a bottom gate structure thin film transistor, but it is not limited thereto, and a top gate structure thin film transistor can also be formed.
  • the active layer 14 is formed between the substrate 11 and the first metal layer.
  • the passivation layer 17 is formed on the second metal layer, and is provided as a whole layer, and the material of the passivation layer 17 is usually at least one of silicon nitride (SiNx) and silicon oxide (SiOx), And can be a single-layer or multi-layer structure.
  • the passivation layer 17 is formed, via holes are formed in both the chip bonding area 100 and the light emitting device bonding area 300 .
  • an electrode layer is formed on the passivation layer 17 , and an electrode 18 is formed by patterning.
  • the electrode 18 is located in the chip bonding area 100 and is connected to the chip bonding terminal 161 through the via hole in the passivation layer 17 .
  • a scratch-resistant layer is formed on the side of the light-emitting device binding terminal away from the substrate, the scratch-resistant layer covers the pixel driving circuit, and a first via hole exposing the light-emitting device binding terminal is patterned in the scratch-resistant layer.
  • the material of the scratch-resistant layer 20 includes at least one of inorganic materials, organic composite materials, organic-inorganic composite materials, and metal materials with a melting point lower than a threshold, which may be a single layer formed of these materials, or may be It is a composite film layer formed by two or more materials.
  • the anti-scratch layer 20 is disposed corresponding to the driving circuit area 200 of the substrate, and a pixel driving circuit is formed in the driving circuit area 200, including a plurality of overlapping signal lines formed by patterning the first metal layer and the second metal layer 16.
  • the anti-scratch layer 20 may also be a whole-layer structure, extending to cover the entire region where the substrate 11 is located. Only the first via hole exists in the light-emitting device binding area 300 , and other areas are covered and protected by the anti-scratch layer 20 .
  • the thickness of the scratch-resistant layer 20 is greater than 3 microns.
  • the scratch resistant layer 20 includes a positive photosensitive material or a negative photosensitive material.
  • the anti-scratch layer 20 is a positive photosensitive material
  • the first via hole when the first via hole is formed, the position of the binding terminal 162 of the light-emitting device is exposed, and other parts are not exposed, and then the first via is formed corresponding to the position of the binding terminal 162 of the light-emitting device during development.
  • Via holes when the scratch-resistant layer 20 is a negative photosensitive material, when the first via hole is formed, the position of the binding terminal 162 of the light emitting device is not exposed, and other parts are exposed, and then the corresponding binding terminal 162 of the light emitting device is similarly developed.
  • a first via hole is formed at the location.
  • the material of the anti-scratch layer 20 is preferably photosensitive polyimide, and when developing and removing the material in the first via hole, a variety of different developing solutions can be used for removal.
  • ethanolamine, N-methylpyrrolidone and water with a mass fraction ratio of 1:1:1 are mixed to form a developing solution, and the exposed scratch-resistant layer 20 is developed for 2.5 minutes , forming the first via.
  • ethanolamine, N-methylpyrrolidone and water with a mass fraction ratio of 4:1:1 are mixed to form a developing solution, and the exposed scratch-resistant layer 20 is developed for 1.5 minutes , forming the first via.
  • the exposed scratch-resistant layer 20 is developed for 18 minutes with a 10% tetramethylammonium hydroxide solution to form the first via hole.
  • the reflective layer 19 is formed first, and then the scratch-resistant layer 20 is formed, and then the reflective layer 19 and the scratch-resistant layer 20 are patterned to form a first A via hole, the first via hole is located in the light emitting device binding region 300 and exposes the light emitting device binding terminal 162 .
  • the reflective layer 19 and the anti-scratch layer 20 are formed first, and then the first via hole is formed in this area at the same time.
  • the via hole of the passivation layer 17 at this position may also be formed together with the reflective layer 19 and the anti-scratch layer 20 .
  • the reflective layer 19 is made of a material with high reflectivity.
  • solder paste is filled in the first via hole by a screen printing method.
  • the first via hole is filled with solder paste 30 , which may be solder paste.
  • solder paste 30 When filling, first set a stencil on the substrate, the mesh of the stencil corresponds to the first via hole, and then set a scraper on each opposite side of the stencil, and the two scrapers alternate back and forth to the other side of the stencil.
  • the printing work drives the solder paste 30 to move from one side of the substrate to the other side.
  • the solder paste 30 is moved by the scraper to the first via hole, the solder paste 30 will drop from the corresponding grid on the stencil to the other side.
  • the solder paste 30 is finally filled into the first via hole.
  • the anti-scratch layer is peeled off, and the light-emitting device is bound to the binding terminal of the light-emitting device through solder paste.
  • the anti-scratch layer 20 is peeled off.
  • an excimer laser can be used as a light source to irradiate the scratch-resistant layer 20 to peel off the scratch-resistant layer 20, or a dry etching process can be used to etch and remove the scratch-resistant layer 20.
  • the specific removal method depends on the characteristics of the material. The process of peeling off the scratch-resistant layer 20 is within the scope of protection of the present application.
  • the anti-scratch layer 20 as an example of polyimide
  • an excimer laser when used as a light source to illuminate the scratch-resistant layer 20, an excimer laser with a wavelength of 308 nanometers can be used as the light source, and the energy density threshold of the excimer laser is 160 mj/cm 2. This arrangement can not only ensure that the anti-scratch layer 20 can be completely peeled off from other film layers, but also will not cause damage to other film layers due to excessive energy.
  • the light-emitting device 40 is bound to the light-emitting device binding terminal 162 through the solder paste 30, and the light-emitting device includes a Mini LED or Micro LED device.
  • the substrate is temporarily stored for a period of time, and then other processes such as reflow soldering are performed to complete the production of the substrate.
  • a scratch-resistant layer is first formed to form protection, so that the lines in the driving circuit area of the substrate will not be crushed during screen printing.
  • the anti-scratch layer is peeled off to expose the reflective layer without affecting the reflectivity of the substrate, thus achieving both scratch resistance and reduced reflectivity.
  • the present application also provides a substrate, which is made by any one of the above-mentioned preparation methods.
  • a substrate which is made by any one of the above-mentioned preparation methods.
  • the present application also provides a backlight module, which includes a substrate 201 , a light-emitting device 202 , a plastic frame 203 , a diffusion plate 204 , a reflection sheet 205 and an optical film 206 , the light-emitting device 202 and the substrate 201 is bound, wherein the substrate 201 is made by the preparation method described in any one of the above, and the light-emitting device 202 is a Mini LED or Micro LED devices are used as backlight sources in backlight modules.
  • the liquid crystal display panel After subsequent assembly with the liquid crystal display panel, the liquid crystal display panel is fixed on the plastic frame 203 of the backlight module through the adhesive layer. After the reflective sheet 205 and the optical film 206 are irradiated on the liquid crystal display panel, the light 21 first passes through the lower polarizer of the liquid crystal display panel to become polarized light, and the liquid crystal panel inputs different sizes of light to each pixel through the switching function of TFT. Data signal voltage, liquid crystal molecules rotate in different states under different voltages, so the degree of transmission of polarized light is also different, and finally the brightness of the light emitted through the upper polarizer is also different, so as to achieve multi-gray-scale screen display.
  • a small-sized backlight module only one substrate 201 is provided.
  • multiple substrates 201 are used for splicing.
  • the backlight module is formed by splicing 12 substrates 201, all the light-emitting devices 202 form a plurality of backlight units, each substrate 201 includes 432 backlight units, and each backlight unit includes 4 LED devices connected in series,
  • the driving circuit in each substrate 201 individually drives the light-emitting devices 202 in the substrate, controls the light emission individually, and provides backlights for the pixels in each partition.
  • the module brightness control is more flexible, and the lighting effect is better.
  • a layer of anti-scratch layer is formed before filling the solder paste, so that each signal line forming the pixel driving circuit in the driving circuit area of the substrate will not be crushed during screen printing. After the solder paste is filled, the anti-scratch layer is peeled off to prevent the circuit on the substrate from being crushed without affecting the performance of the substrate.
  • the substrate of the present application in addition to being applied to a backlight module, can also be directly applied to a display panel to form a Mini LED display panel or a Micro LED display panel.
  • the light-emitting device is used as each sub-pixel in the display panel.
  • the present application further provides a display panel including the substrate described in any of the above embodiments.
  • a scratch-resistant layer is formed first, so that each signal line forming the pixel driving circuit in the driving circuit area of the substrate will not be crushed during screen printing.
  • the anti-scratch layer is peeled off to prevent the circuit on the substrate from being crushed without affecting the performance of the substrate.
  • the present application provides a substrate and a preparation method of the substrate, the preparation method includes: providing a substrate; preparing a binding terminal of a light-emitting device and a pixel driving circuit for driving the light-emitting device to emit light on one side of the substrate, the binding terminal of the light-emitting device is located on the side of the substrate In the binding area of the light-emitting device, the pixel driving circuit is located in the driving circuit area of the substrate; an anti-scratch layer is formed on the side of the binding terminal of the light-emitting device away from the substrate, the anti-scratch layer covers the pixel driving circuit, and is patterned in the anti-scratch layer forming a first via hole exposing the binding terminal of the light emitting device; filling the first via hole with solder paste by a screen printing method; peeling off the anti-scratch layer, and binding the light emitting device to the binding terminal of the light emitting device through the solder paste.
  • a scratch-resistant layer is formed first, so that each signal line forming the pixel driving circuit in the driving circuit area of the substrate will not be crushed during screen printing.
  • the layer is peeled off to prevent the circuit on the substrate from being crushed without affecting the performance of the substrate.
  • a substrate and a method for preparing a substrate provided by the embodiments of the present application have been described in detail above.
  • the principles and implementations of the present application are described with specific examples in this article.
  • the technical solution of the application and its core idea; those of ordinary skill in the art should understand that: it can still make modifications to the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements to some of the technical features; and these modifications or replacements,
  • the essence of the corresponding technical solutions does not deviate from the scope of the technical solutions of the embodiments of the present application.

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Abstract

本申请提供一种基板及其制备方法，本申请的制备方法在基板上发光器件绑定端子对应区域内填充焊膏之前先形成一层防刮层，使得丝网印刷时形成像素驱动电路的各信号线不会被压伤，在填充焊膏后，将防刮层剥离，实现了在不影响基板性能的同时防止基板上线路被压伤。

Description

基板和基板的制备方法 技术领域
本申请涉及显示技术领域，尤其涉及一种基板和基板的制备方法。
 背景技术
Mini LED基板在制备过程中，需要先在Mini LED绑定端子处进行锡膏印刷，然后再将Mini LED固定在锡膏上。在现有的锡膏印刷工艺中，在基板相对的两侧各设置一把刮刀，然后两把刮刀通过钢网交替对基板进行整面印刷，然而，由于刮刀的压力过大，使得印刷时钢网与基板的接触力较大，常会造成基板上线路被压伤而出现短路，影响基板的使用效果。
因此，现有的Mini LED基板存在线路易被压伤的技术问题，需要改进。
 技术问题
本申请实施例提供一种基板和基板的制备方法，用以缓解现有的Mini LED基板中线路易被压伤的技术问题。
 技术解决方案
为解决上述问题，本申请提供的技术方案如下：
本申请提供一种基板的制备方法，包括：
提供衬底；
在所述衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路，所述发光器件绑定端子位于基板的发光器件绑定区内，所述像素驱动电路位于所述基板的驱动电路区内；
在所述发光器件绑定端子远离所述衬底的一侧形成防刮层，所述防刮层覆盖所述像素驱动电路，在所述防刮层中图案化形成暴露所述发光器件绑定端子的第一过孔；
通过丝网印刷法在所述第一过孔内填充焊膏；
剥离所述防刮层，将发光器件通过所述焊膏与所述发光器件绑定端子绑定。
在本申请的基板的制备方法中，所述防刮层包括无机材料、有机复合材料、有机无机复合材料、以及熔点低于阈值的金属材料中的至少一种。
在本申请的基板的制备方法中，所述防刮层包括正性光敏材料或负性光敏材料。
在本申请的基板的制备方法中，所述防刮层包括光敏性聚酰亚胺。
在本申请的基板的制备方法中，剥离所述防刮层的步骤，包括：采用准分子激光作为光源照射所述防刮层，将所述防刮层剥离。
在本申请的基板的制备方法中，在所述发光器件绑定端子远离所述衬底的一侧形成防刮层的步骤，包括：形成厚度大于3微米的防刮层。
在本申请的基板的制备方法中，在所述衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路的步骤，包括：在所述衬底上依次形成第一金属层、栅绝缘层、有源层和第二金属层，所述第一金属层图案化形成所述像素驱动电路中各晶体管的栅极，所述第二金属层图案化形成所述发光器件绑定端子和所述各晶体管的源漏极。
在本申请的基板的制备方法中，在所述发光器件绑定端子远离所述衬底的一侧形成防刮层的步骤之前，还包括：在所述基板的芯片绑定区内形成芯片绑定端子。
在本申请的基板的制备方法中，所述发光器件包括Mini LED或Micro LED。
本申请还提供一种基板，采用上述任一项所述的基板的制备方法制成。
本申请还提供一种基板的制备方法，包括：
提供衬底；
在所述衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路，所述发光器件绑定端子位于基板的发光器件绑定区内，所述像素驱动电路位于所述基板的驱动电路区内；
在所述发光器件绑定端子远离所述衬底的一侧依次形成反射层和防刮层，所述防刮层覆盖所述像素驱动电路，在所述防刮层中图案化形成暴露所述发光器件绑定端子的第一过孔；
通过丝网印刷法在所述第一过孔内填充焊膏；
剥离所述防刮层，将发光器件通过所述焊膏与所述发光器件绑定端子绑定。
在本申请的基板的制备方法中，所述防刮层包括无机材料、有机复合材料、有机无机复合材料、以及熔点低于阈值的金属材料中的至少一种。
在本申请的基板的制备方法中，所述防刮层包括正性光敏材料或负性光敏材料。
在本申请的基板的制备方法中，所述防刮层包括光敏性聚酰亚胺。
在本申请的基板的制备方法中，剥离所述防刮层的步骤，包括：采用准分子激光作为光源照射所述防刮层，将所述防刮层剥离。
在本申请的基板的制备方法中，在所述衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路的步骤，包括：在所述衬底上依次形成第一金属层、栅绝缘层、有源层和第二金属层，所述第一金属层图案化形成所述像素驱动电路中各晶体管的栅极，所述第二金属层图案化形成所述发光器件绑定端子和所述各晶体管的源漏极。
在本申请的基板的制备方法中，在所述发光器件绑定端子远离所述衬底的一侧形成防刮层的步骤之前，还包括：在所述基板的芯片绑定区内形成芯片绑定端子。
在本申请的基板的制备方法中，所述发光器件包括Mini LED或Micro LED。
在本申请的基板的制备方法中，在所述发光器件绑定端子远离所述衬底的一侧形成防刮层，所述防刮层覆盖所述像素驱动电路的步骤，包括：在所述发光器件绑定端子远离所述衬底的一侧形成防刮层，所述防刮层延伸覆盖所述衬底所在区域。
在本申请的基板的制备方法中，剥离所述防刮层的步骤，包括：采用干刻工艺去除所述防刮层。
 有益效果
本申请的有益效果：本申请提供一种基板和基板的制备方法，该制备方法包括：提供衬底；在所述衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路，所述发光器件绑定端子位于基板的发光器件绑定区内，所述像素驱动电路位于所述基板的驱动电路区内；在所述发光器件绑定端子远离所述衬底的一侧形成防刮层，所述防刮层覆盖所述像素驱动电路，在所述防刮层中图案化形成暴露所述发光器件绑定端子的第一过孔；通过丝网印刷法在所述第一过孔内填充焊膏；剥离所述防刮层，将发光器件通过所述焊膏与所述发光器件绑定端子绑定。本申请在填充焊膏之前，先形成一层防刮层，使得丝网印刷时基板的驱动电路区中形成像素驱动电路的各信号线不会被压伤，在填充焊膏后，将防刮层剥离，实现了在不影响基板性能的同时防止基板上线路被压伤。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的基板的制备方法的流程示意图。
图2为本申请实施例提供的基板的平面结构示意图。
图3为本申请实施例提供的基板的制备方法的第一阶段示意图。
图4为本申请实施例提供的基板的制备方法的第二阶段示意图。
图5为本申请实施例提供的基板的制备方法的第三阶段示意图。
图6为本申请实施例提供的基板的制备方法的第四阶段示意图。
图7为本申请实施例提供的基板的制备方法的第五阶段示意图。
图8为本申请实施例提供的基板的制备方法的第六阶段示意图。
图9为本申请实施例提供的基板的制备方法的第七阶段示意图。
图10为本申请实施例提供的基板的制备方法的第八阶段示意图。
图11为本申请实施例提供的背光模组的结构示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相近的单元是用以相同标号表示。
本申请实施例提供一种基板和基板的制备方法，用以缓解现有的Mini LED基板中线路易被压伤的技术问题。
如图1所示，本申请提供一种基板的制备方法，包括：
S101：提供衬底；
S102：在衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路，发光器件绑定端子位于基板的发光器件绑定区内，像素驱动电路位于基板的驱动电路区内；
S103：在发光器件绑定端子远离衬底的一侧形成防刮层，防刮层覆盖像素驱动电路，在防刮层中图案化形成暴露发光器件绑定端子的第一过孔；
S104：通过丝网印刷法在第一过孔内填充焊膏；
S105：剥离防刮层，将发光器件通过焊膏与发光器件绑定端子绑定。
如图2所示，为本申请实施例提供的基板的平面结构示意图，基板包括芯片绑定区（图未示出）、驱动电路区200以及发光器件绑定区300。基板上设置有阵列排布的多个发光器件绑定区300，每个发光器件绑定区300内形成有发光器件绑定端子162，其中发光器件绑定端子162包括第一绑定部分1621和第二绑定部分1622，在形成发光器件绑定端子162后，先通过丝网印刷法透过钢网在第一绑定部分1621和第二绑定部分1622之间的第一过孔内填充焊膏，然后再将发光器件通过焊膏与发光器件绑定端子162绑定，实现与基板的固定。对应每个发光器件，均设置有对应的像素驱动电路来驱动发光器件发光，像素驱动电路设置在驱动电路区200内，驱动电路区200与发光器件绑定区300相邻，在基板中也呈阵列排布。芯片绑定区位于基板的边缘区域，芯片绑定区内设置有驱动芯片，用于给每个像素驱动电路提供电信号，以使像素驱动电路工作来驱动发光器件发光。
基板自下而上包括衬底、第一金属层、栅绝缘层、有源层和第二金属层，为方便表示，图2中仅示出了第一金属层和第二金属层，其中第一金属层图案化形成了多条信号线，包括第一扫描线51、第二扫描线52、第三扫描线53、第四扫描线54以及存储电容的第一极板55，第二金属层也图案化形成多条信号线，包括第一数据线61、电源高电位信号线62、第二数据线63、感测线64、第三数据线65、电源高电位信号线66以及存储电容的第二极板67，此外，第二金属层在发光器件绑定区300内形成发光器件绑定端子162。在驱动电路区200内，第一金属层形成的各信号线与第二金属层形成的各信号线在衬底上的投影存在多处交叠区域，交叠区域的厚度相对于其他区域较大，当通过丝网印刷法透过钢网在第一绑定部分1621和第二绑定部分1622之间的第一过孔内填充焊膏时，刮刀最易压伤交叠区域的信号线。本申请通过在填充焊膏之前，先形成一层防刮层，使得丝网印刷时基板的驱动电路区中形成像素驱动电路的各信号线不会被压伤，在填充焊膏后，将防刮层剥离，实现了在不影响基板性能的同时防止基板上线路被压伤。
下面结合图3至图10对该制备方法进行具体说明，其中图3和图10均为图2中沿A-A截面的膜层结构示意图。
在S101中，提供衬底。如图3至图10所示，本申请实施例提供的基板，包括芯片绑定区100、驱动电路区200以及发光器件绑定区300。如图3所示，衬底11可以是柔性衬底，也可以是刚性衬底，如玻璃等，本申请对衬底11的材质不做限制。
在S102中，在衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路，发光器件绑定端子位于基板的发光器件绑定区内，像素驱动电路位于基板的驱动电路区内。本实施例以基板在驱动电路区200内形成底栅结构的薄膜晶体管为例进行说明，如图4所示，在衬底11上依次制备第一金属层、栅绝缘层13、有源层14、欧姆接触层15和第二金属层16。
在衬底11与第一金属层之间，通常还设置有阻隔层和缓冲层（图未示出），阻隔层的材料一般为氧化硅(SiOx)，用于阻挡外界的杂质粒子进入衬底11和隔绝水氧，缓冲层一般采用氮化硅(SiNx)，氮化硅具有较强的离子阻隔能力和很好的水氧隔绝能力，能有效防止杂质在热制程中扩散到薄膜晶体管中。
第一金属层形成在衬底11上，并在驱动电路区200内图案化形成薄膜晶体管的栅极123，在芯片绑定区100内图案化形成第一导电构件121，在发光器件绑定区300内图案化形成第二导电构件（图未示出），第一导电构件121和第二导电构件可以是第一金属层中形成的各类信号线。第一金属层的材料包括铜、钼铜合金和钼铝合金中的至少一种。
栅绝缘层13形成在第一金属层上，栅绝缘层13的材料通常为氮化硅(SiNx)和氧化硅(SiOx)中的至少一种，并且可以是单层或多层结构。
有源层14形成在栅绝缘层13上，有源层14可以是非晶硅材料、多晶硅（a-Si）材料或金属氧化物半导体材料等，其中金属氧化物半导体可以包括铟锡氧化物、铟镓锌氧化物、铟锌锡氧化物、铟镓锌锡氧化物中的至少一种。
欧姆接触层15形成在有源层14上，第二金属层16形成在欧姆接触层15上。第二金属层16的材料包括铜、钼铜合金和钼铝合金中的至少一种。
如图5所示，在形成第二金属层16后，对有源层14、欧姆接触层15和第二金属层16图案化。
有源层14包括分别形成在芯片绑定区100、驱动电路区200和发光器件绑定区300中的三部分，其中位于驱动电路区200中的部分包括通过掺杂N型杂质离子或P型杂质离子而形成的源极区域和漏极区域、以及位于源极区域和漏极区域之间的沟道区域。
欧姆接触层15包括分别形成在芯片绑定区100、驱动电路区200和发光器件绑定区300中的三部分，其中在驱动电路区200的部分，分别形成在有源层14的源极区域和漏极区域上。
第二金属层16在驱动电路区200内图案化形成薄膜晶体管的源极163和漏极164，在芯片绑定区100内图案化形成芯片绑定端子161，在发光器件绑定区300内图案化形成发光器件绑定端子162，源极163和漏极164分别与有源层14的源极区域和漏极区域连接，芯片绑定端子161通过过孔与第一导电构件121连接。
通过上述步骤，在基板的芯片绑定区100内形成了芯片绑定端子161，在基板的驱动电路区200内形成了驱动电路，在基板的发光器件绑定区300内形成了发光器件绑定端子162。
上述实施例以底栅结构的薄膜晶体管进行说明，但不限于此，也可以形成顶栅结构的薄膜晶体管，此时，有源层14形成在衬底11与第一金属层之间。
如图6所示，钝化层17形成在第二金属层上，且为整层设置，钝化层17的材料通常为氮化硅(SiNx)和氧化硅(SiOx)中的至少一种，并且可以是单层或多层结构。在钝化层17形成后，在芯片绑定区100和发光器件绑定区300内均形成有过孔。
如图7所示，在钝化层17上形成有电极层，图案化形成电极18，电极18位于芯片绑定区100内，通过钝化层17中过孔与芯片绑定端子161连接。
在S103中，在发光器件绑定端子远离衬底的一侧形成防刮层，防刮层覆盖像素驱动电路，在防刮层中图案化形成暴露发光器件绑定端子的第一过孔。
如图8所示，防刮层20的材料包括无机材料、有机复合材料、有机无机复合材料、以及熔点低于阈值的金属材料中的至少一种，可以是这些材料形成的单层，也可以是其中两种或多种材料形成的复合膜层。防刮层20对应基板的驱动电路区200设置，驱动电路区200内形成有像素驱动电路，包括第一金属层和第二金属层16图案化形成的交叠设置的多条信号线，此外，防刮层20也可以为整层设置的结构，延伸覆盖整个衬底11所在的区域，仅在发光器件绑定区300内存在第一过孔，其他区域都被防刮层20覆盖保护。防刮层20的厚度大于3微米。
在一种实施例中，防刮层20包括正性光敏材料或负性光敏材料。当防刮层20为正性光敏材料，在形成第一过孔时，对发光器件绑定端子162位置进行曝光，其他部分不曝光，然后显影时对应发光器件绑定端子162所在位置形成第一过孔，当防刮层20为负性光敏材料，在形成第一过孔时，对发光器件绑定端子162位置不曝光，其他部分进行曝光，然后同样地显影时对应发光器件绑定端子162所在位置形成第一过孔。
防刮层20的材料优选为光敏性聚酰亚胺，则在显影去除第一过孔内的材料时，可采用多种不同的显影液进行去除。
在一种实施例中，在47摄氏度下，用质量分数比为1:1:1的乙醇胺、N-甲基吡咯烷酮和水混合形成显影液，对曝光后的防刮层20进行2.5分钟的显影，形成第一过孔。
在一种实施例中，在47摄氏度下，用质量分数比为4:1:1的乙醇胺、N-甲基吡咯烷酮和水混合形成显影液，对曝光后的防刮层20进行1.5分钟的显影，形成第一过孔。
在一种实施例中，用浓度为10%的四甲基氢氧化铵溶液，对曝光后的防刮层20进行18分钟的显影，形成第一过孔。
在一种实施例中，在发光器件绑定端子162远离衬底11的一侧，先形成反射层19，然后再形成防刮层20，然后对反射层19和防刮层20图案化形成第一过孔，第一过孔位于发光器件绑定区300内，且将发光器件绑定端子162暴露出。在形成第一过孔时，先形成反射层19和防刮层20，再同时在该区域形成第一过孔。此外，钝化层17在该位置的过孔，也可以是与反射层19和防刮层20一起形成。
在后续与发光器件绑定后，发光器件发出的光遇到其他部件后会发射回来，由于基板设置有反射层19，反射回的光在照射到反射层19上时，又会被反射回去，因此提高了光线的利用率。反射层19采用反射率高的材料制成。
在S104中，通过丝网印刷法在第一过孔内填充焊膏。
如图9所示，第一过孔内填充有焊膏30，具体可以是锡膏。在填充时，在基板上先设置一钢网，钢网的网格与第一过孔对应，然后在钢网相对的两侧各设置一刮刀，两刮刀来回交替向钢网的另一侧进行印刷工作，带动焊膏30也从基板的一侧从另一侧移动，在焊膏30被刮刀带动移动到第一过孔处时，焊膏30会从钢网上对应的网格处掉落至第一过孔中，最终使得焊膏30会填充至第一过孔中。
在S105中，剥离防刮层，将发光器件通过焊膏与发光器件绑定端子绑定。
如图10所示，在填充好焊膏30后，将防刮层20进行剥离。剥离时，可以采用准分子激光作为光源照射防刮层20，将防刮层20剥离，也可以采用干刻工艺将防刮层20刻蚀去除，具体去除方法根据材料的特性而定，凡能对防刮层20进行剥离的工艺均在本申请的保护范围内。
在采用准分子激光照射剥离时，由于准分子激光具有高能量密度，在照射防刮层20时，激光在基板其他膜层中损失较少，在到达防刮层20与反射层19的交界处时，被防刮层20吸收，使防刮层20温度升高发生热分解，从而达到防刮层20从基板其他膜层上剥离的目的。此外，由于反射层19的高反射性，激光会被反射层19反射，因此进一步增强了激光剥离的效果，增加了产品信赖性。以防刮层20为聚酰亚胺为例，采用准分子激光作为光源照射防刮层20时，可以采用波长为308纳米的准分子激光作为光源，准分子激光的能量密度阈值为160mj/cm 2，此种设置既能保证防刮层20可以完全与其他膜层剥离，又不会因能量过高对其他膜层造成损伤。
在防刮层20去除后，将发光器件40通过焊膏30与发光器件绑定端子162绑定，发光器件包括Mini LED或Micro LED器件。绑定完成后将基板暂存一段时间后，再进行回流焊接等其他工序，完成基板的制作。
本申请的制备方法中，在填充焊膏之前，先形成一层防刮层，形成保护，使得丝网印刷时基板的驱动电路区中的各线路不会被压伤，在填充焊膏后，将防刮层剥离，使得反射层暴露出来，又不会影响基板的反射率，因此实现了对防刮和降低反射率的兼顾。
本申请还提供一种基板，采用上述任一项所述的制备方法制成。通过在填充焊膏之前，先形成一层防刮层，使得丝网印刷时基板的驱动电路区中形成像素驱动电路的各信号线不会被压伤，在填充焊膏后，将防刮层剥离，实现了在不影响基板性能的同时防止基板上线路被压伤。
如图11所示，本申请还提供一种背光模组，该背光模组包括基板201、发光器件202、胶框203、扩散板204、反射片205和光学膜片206，发光器件202与基板201绑定，其中基板201由上述任一项所述的制备方法制成，发光器件202为Mini LED或Micro LED器件，作为背光模组中的背光源。
在后续与液晶显示面板组装后，液晶显示面板通过粘结层固定在背光模组的胶框203上，背光模组中设置在基板201上的发光器件202发出的光线21，经由扩散板204、反射片205和光学膜片206后，照射到液晶显示面板上，光线21先通过液晶显示面板的下偏光片变成偏振光，液晶面板通过TFT的开关作用，给每个像素分别输入不同大小的数据信号电压，液晶分子在不同电压下旋转的状态不同，因此对偏振光的透过程度也不同，最后经由上偏光片出射的光线亮度也不同，以此来实现多灰阶的画面显示。
在小尺寸的背光模组中，仅设置一块基板201，在中大尺寸的背光模组中，使用多块基板201进行拼接，例如在分辨率为7680x4320的8K产品中，液晶显示面板上一个分区通常包括多个像素，背光模组由12个基板201拼接形成，所有发光器件202形成多个背光单元，每块基板201中包括432个背光单元，每个背光单元包括4个串联的LED器件，每块基板201中的驱动电路对该基板中的发光器件202进行单独驱动，单独控制发光，单独为每个分区内的像素提供背光，相对于采用整面驱动的背光模组，分区驱动的背光模组亮度控制更加灵活，发光效果更好。
本申请的背光模组中，本申请在填充焊膏之前，先形成一层防刮层，使得丝网印刷时基板的驱动电路区中形成像素驱动电路的各信号线不会被压伤，在填充焊膏后，将防刮层剥离，实现了在不影响基板性能的同时防止基板上线路被压伤。
本申请的基板，除了应用在背光模组外，还可以直接应用在显示面板中，形成Mini LED显示面板或Micro LED显示面板，此时发光器件作为显示面板中的各子像素。为此，本申请还提供一种显示面板，包括上述任一实施例所述的基板。本申请的显示面板在填充焊膏之前，先形成一层防刮层，使得丝网印刷时基板的驱动电路区中形成像素驱动电路的各信号线不会被压伤，在填充焊膏后，将防刮层剥离，实现了在不影响基板性能的同时防止基板上线路被压伤。
根据以上实施例可知：
本申请提供一种基板和基板的制备方法，该制备方法包括：提供衬底；在衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路，发光器件绑定端子位于基板的发光器件绑定区内，像素驱动电路位于基板的驱动电路区内；在发光器件绑定端子远离衬底的一侧形成防刮层，防刮层覆盖像素驱动电路，在防刮层中图案化形成暴露发光器件绑定端子的第一过孔；通过丝网印刷法在第一过孔内填充焊膏；剥离防刮层，将发光器件通过焊膏与发光器件绑定端子绑定。本申请在填充焊膏之前，先形成一层防刮层，使得丝网印刷时基板的驱动电路区中形成像素驱动电路的各信号线不会被压伤，在填充焊膏后，将防刮层剥离，实现了在不影响基板性能的同时防止基板上线路被压伤。
在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。
以上对本申请实施例所提供的一种基板和基板的制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。

Claims (20)

  1. 一种基板的制备方法，其包括：
    提供衬底；
    在所述衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路，所述发光器件绑定端子位于基板的发光器件绑定区内，所述像素驱动电路位于所述基板的驱动电路区内；
    在所述发光器件绑定端子远离所述衬底的一侧形成防刮层，所述防刮层覆盖所述像素驱动电路，在所述防刮层中图案化形成暴露所述发光器件绑定端子的第一过孔；
    通过丝网印刷法在所述第一过孔内填充焊膏；
    剥离所述防刮层，将发光器件通过所述焊膏与所述发光器件绑定端子绑定。
  2. 如权利要求1所述的基板的制备方法，其中，所述防刮层包括无机材料、有机复合材料、有机无机复合材料、以及熔点低于阈值的金属材料中的至少一种。
  3. 如权利要求2所述的基板的制备方法，其中，所述防刮层包括正性光敏材料或负性光敏材料。
  4. 如权利要求3所述的基板的制备方法，其中，所述防刮层包括光敏性聚酰亚胺。
  5. 如权利要求1所述的基板的制备方法，其中，剥离所述防刮层的步骤，包括：采用准分子激光作为光源照射所述防刮层，将所述防刮层剥离。
  6. 如权利要求1所述的基板的制备方法，其中，在所述发光器件绑定端子远离所述衬底的一侧形成防刮层的步骤，包括：形成厚度大于3微米的防刮层。
  7. 如权利要求1所述的基板的制备方法，其中，在所述衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路的步骤，包括：在所述衬底上依次形成第一金属层、栅绝缘层、有源层和第二金属层，所述第一金属层图案化形成所述像素驱动电路中各晶体管的栅极，所述第二金属层图案化形成所述发光器件绑定端子和所述各晶体管的源漏极。
  8. 如权利要求1所述的基板的制备方法，其中，在所述发光器件绑定端子远离所述衬底的一侧形成防刮层的步骤之前，还包括：在所述基板的芯片绑定区内形成芯片绑定端子。
  9. 如权利要求1所述的基板的制备方法，其中，所述发光器件包括Mini LED或Micro LED。
  10. 一种基板，其中，采用权利要求1所述的基板的制备方法制成。
  11. 一种基板的制备方法，其包括：
    提供衬底；
    在所述衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路，所述发光器件绑定端子位于基板的发光器件绑定区内，所述像素驱动电路位于所述基板的驱动电路区内；
    在所述发光器件绑定端子远离所述衬底的一侧依次形成反射层和防刮层，所述防刮层覆盖所述像素驱动电路，在所述防刮层中图案化形成暴露所述发光器件绑定端子的第一过孔；
    通过丝网印刷法在所述第一过孔内填充焊膏；
    剥离所述防刮层，将发光器件通过所述焊膏与所述发光器件绑定端子绑定。
  12. 如权利要求11所述的基板的制备方法，其中，所述防刮层包括无机材料、有机复合材料、有机无机复合材料、以及熔点低于阈值的金属材料中的至少一种。
  13. 如权利要求12所述的基板的制备方法，其中，所述防刮层包括正性光敏材料或负性光敏材料。
  14. 如权利要求13所述的基板的制备方法，其中，所述防刮层包括光敏性聚酰亚胺。
  15. 如权利要求11所述的基板的制备方法，其中，剥离所述防刮层的步骤，包括：采用准分子激光作为光源照射所述防刮层，将所述防刮层剥离。
  16. 如权利要求11所述的基板的制备方法，其中，在所述衬底一侧制备发光器件绑定端子和驱动发光器件发光的像素驱动电路的步骤，包括：在所述衬底上依次形成第一金属层、栅绝缘层、有源层和第二金属层，所述第一金属层图案化形成所述像素驱动电路中各晶体管的栅极，所述第二金属层图案化形成所述发光器件绑定端子和所述各晶体管的源漏极。
  17. 如权利要求11所述的基板的制备方法，其中，在所述发光器件绑定端子远离所述衬底的一侧形成防刮层的步骤之前，还包括：在所述基板的芯片绑定区内形成芯片绑定端子。
  18. 如权利要求11所述的基板的制备方法，其中，所述发光器件包括Mini LED或Micro LED。
  19. 如权利要求11所述的基板的制备方法，其中，在所述发光器件绑定端子远离所述衬底的一侧形成防刮层，所述防刮层覆盖所述像素驱动电路的步骤，包括：在所述发光器件绑定端子远离所述衬底的一侧形成防刮层，所述防刮层延伸覆盖所述衬底所在区域。
  20. 如权利要求11所述的基板的制备方法，其中，剥离所述防刮层的步骤，包括：采用干刻工艺去除所述防刮层。
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CN113539127B (zh) * 2021-07-09 2023-04-11 京东方科技集团股份有限公司 一种显示基板及其制备方法、显示装置
CN114171563B (zh) * 2021-11-30 2023-07-04 武汉华星光电半导体显示技术有限公司 显示面板和显示装置
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