WO2022044216A1 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
WO2022044216A1
WO2022044216A1 PCT/JP2020/032428 JP2020032428W WO2022044216A1 WO 2022044216 A1 WO2022044216 A1 WO 2022044216A1 JP 2020032428 W JP2020032428 W JP 2020032428W WO 2022044216 A1 WO2022044216 A1 WO 2022044216A1
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Prior art keywords
bias
period
power
plasma
microwave power
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Ceased
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PCT/JP2020/032428
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English (en)
French (fr)
Japanese (ja)
Inventor
紀彦 池田
一也 山田
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Hitachi High Tech Corp
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Hitachi High Tech Corp
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Priority to US17/435,509 priority Critical patent/US12009180B2/en
Priority to KR1020217027245A priority patent/KR20220027803A/ko
Priority to PCT/JP2020/032428 priority patent/WO2022044216A1/ja
Priority to JP2021524472A priority patent/JP7201805B2/ja
Priority to CN202080020805.6A priority patent/CN114521283B/zh
Priority to TW110125452A priority patent/TWI824268B/zh
Publication of WO2022044216A1 publication Critical patent/WO2022044216A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32201—Generating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32293—Microwave generated discharge using particular waveforms, e.g. polarised waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching

Definitions

  • the present invention relates to a plasma processing apparatus.
  • Electron Cyclotron Resonance (ECR) type plasma etching equipment uses RF (Radio Frequency) high frequency power to accelerate the ions incident on the semiconductor element.
  • RF Radio Frequency
  • Patent Document 2 describes a method in which a synchronized RF bias power is applied to a time-modulated source power source (microwave), and a phase-modulated RF bias power is applied to the time-modulated microwave. Is disclosed.
  • Patent Document 3 discloses a method of realizing pattern vertical etching having a difference in density by applying an RF bias power to a pulse low section.
  • Patent Document 4 describes a method of realizing etching in which the etching rate distribution is uniform and isotropic etching can be suppressed by setting the microwave output value to an output value of two or more values in the pulse-on section. Is disclosed.
  • All of these conventional techniques aim for low-density plasma and low-dissociation etching by pulsed the source power supply that generates plasma, and apply RF bias power in consideration of plasma type and plasma density to obtain an appropriate amount of ions.
  • the purpose is to draw the plasma into the wafer with ionic energy and aim for the etching shape, selection ratio, and in-plane uniformity of the wafer.
  • Japanese Unexamined Patent Publication No. 59-47733 Japanese Unexamined Patent Publication No. 2015-115564 Japanese Unexamined Patent Publication No. 2017-69542 Japanese Unexamined Patent Publication No. 2020-17565
  • the RF bias power is a continuous wave even if the source power is simply pulsed, the RF bias power cannot be applied at the time of plasma misfire.
  • the off period of the pulsed source power is shortly limited and the pulse repetition frequency is increased, there is a problem that the plasma density does not decrease.
  • etching may be performed in a state where the matching with the RF bias power is insufficient. Therefore, abnormal discharge or abnormal reflected wave of each power source may cause deterioration of in-plane uniformity of etching and deterioration of reproducibility.
  • An object of the present invention is to provide a plasma processing apparatus that controls an etching shape with high accuracy by using a microwave power source capable of oscillating different microwave powers.
  • one of the typical plasma processing devices is a processing chamber in which a sample is plasma-processed and a first high-frequency power supply for generating plasma.
  • a plasma processing apparatus including a high-frequency power supply, a sample table on which the sample is placed, and a second high-frequency power source that supplies a second high-frequency power to the sample table.
  • the first high frequency power is modulated by a first waveform having a first period and a second period adjacent to the first period
  • the second high frequency power has a period A and a period B.
  • a control device that controls the second high frequency power supply so that the second high frequency power of each of the second periods A is supplied in the first period and the second period when modulated by the second waveform.
  • the amplitude of the second period is smaller than the amplitude of the first period and larger than 0.
  • the amplitude of the period A is achieved by being larger than the amplitude of the period B.
  • FIG. 1 is a schematic configuration diagram of an ECR plasma etching apparatus, which is a plasma processing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a diagram showing a timing chart of (a) microwave power, (b) plasma density, (c) plasma impedance, and (d) RF bias power in the first embodiment.
  • FIG. 3A is a diagram showing a timing chart of (a) microwave power, (b) plasma density of gas type A, and (c) plasma density of gas type B in the first embodiment.
  • 3B is an enlarged view of (a) an enlarged view of the plasma density in FIG. 3A, (b) an enlarged cross-sectional view of a wafer pattern shape, and (c) an enlarged cross-sectional view of a wafer pattern shape.
  • FIG. 1 is a schematic configuration diagram of an ECR plasma etching apparatus, which is a plasma processing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a diagram showing a timing chart of (a) microwave power,
  • FIG. 4A is a diagram showing a timing chart of (a) microwave power, (b) plasma density of gas type A, and (c) plasma density of gas type B in the first embodiment.
  • 4B is an enlarged view of (a) the plasma density in FIG. 4A, (b) an enlarged cross-sectional view of the pattern shape of the wafer, and (c) an enlarged cross-sectional view of the pattern shape of the wafer.
  • FIG. 5 is a diagram showing an example of a timing chart of (a) pulsed microwave power and (b) pulsed RF bias power in the third embodiment.
  • FIG. 6 is a diagram showing a timing chart of (a) microwave power, (b) plasma density, (c) plasma impedance, and (d) RF bias power in the fourth embodiment.
  • FIG. 7 is a diagram showing a timing chart of (a) microwave power, (b) plasma density, (c) plasma impedance, and (d) RF bias power in the fifth embodiment.
  • FIG. 8A is a diagram showing a timing chart of (a) microwave power, (b) plasma density, (c) plasma impedance, (d) RF bias power, and (e) Vpp in a comparative example.
  • FIG. 8B is a diagram showing a timing chart of (a) microwave power, (b) plasma density, (c) plasma impedance, (d) RF bias power, and (e) Vpp in a comparative example.
  • FIG. 8A is a diagram showing a timing chart of (a) microwave power, (b) plasma density, (c) plasma impedance, (d) RF bias power, and (e) Vpp in a comparative example.
  • FIG. 8B is a diagram showing a timing chart of (a) microwave power, (b) plasma density, (c) plasma impedance, (
  • FIG. 9 is a diagram showing a timing chart of (a) microwave power, (b) plasma density, (c) plasma impedance, (d) RF bias power, and (e) Vpp in the sixth embodiment.
  • FIG. 10 shows the timing of (a) microwave power, (b) plasma density, (c) plasma impedance, (d) RF bias power, (e) RF bias reflected wave, and (f) Vpp in the seventh embodiment. It is a figure which shows the chart.
  • FIG. 11A is a schematic configuration diagram of the ECR plasma etching apparatus according to the eighth embodiment.
  • FIG. 11B is a diagram showing a waveform of microwave power supplied to the ECR plasma etching apparatus of FIG. 11A.
  • FIG. 11C is a diagram showing a waveform of RF bias power supplied to the ECR plasma etching apparatus of FIG. 11A.
  • FIG. 12 is an enlarged cross-sectional view showing the etching shape of the wafer processed by the ECR plasma etching apparatus.
  • FIG. 1 is a schematic configuration diagram of a vertical cross section of an ECR type microwave plasma etching apparatus (hereinafter referred to as plasma processing apparatus 1) according to an embodiment of the present invention.
  • Each part of the plasma processing apparatus 1 such as a processing chamber, a sample table, and a sample has an axisymmetric shape such as a cylinder, a cylinder, or a disk.
  • "power is applied across the switching time” means that the power application is started before the switching time and continues until after the switching time, for example, a period. It means that each second high frequency power of A is supplied in the first period and the second period in the first high frequency power.
  • a vacuum exhaust device 119 is connected to the lower part of the processing chamber 122 inside the vacuum container 101 of the plasma processing device 1. Further, a shower plate 102 and a quartz top plate 103 are arranged in the upper part of the inside of the processing chamber 122.
  • the shower plate 102 has a plurality of holes.
  • the gas for plasma etching processing supplied from the gas supply device 120 is introduced into the processing chamber 122 through the holes of the shower plate 102.
  • a quartz top plate 103 is arranged on the shower plate 102, and a gap for gas supply is provided between the quartz top plate 103 and the quartz top plate 103.
  • the quartz top plate 103 transmits electromagnetic waves from above and airtightly seals the upper part of the processing chamber 122.
  • a cavity resonance portion 104 is arranged on the quartz top plate 103.
  • the upper part of the cavity resonance portion 104 is open, and a waveguide 105 made of a waveguide converter that also serves as a vertical waveguide extending in the vertical direction and a bending portion that bends the direction of the electromagnetic wave by 90 degrees is connected.
  • the waveguide 105 or the like is an oscillating waveguide that propagates electromagnetic waves, and a microwave power supply 106 for plasma generation is connected to the end of the waveguide 105 via a tuner 107.
  • the microwave power supply 106 which is the first high frequency power supply, is a power supply for plasma generation, and oscillates an electromagnetic wave (first high frequency power) based on the control from the control unit 123.
  • the microwave power supply 106 of the present embodiment is capable of microwave oscillation at 2.45 GHz.
  • the first high frequency power is modulated by a first waveform that alternates between high section TH (first period) and low section TL (second period adjacent to the first period).
  • the microwave oscillated from the microwave power supply 106 propagates through the waveguide 105 and propagates into the processing chamber 122 via the cavity resonance portion 104, the quartz top plate 103, and the shower plate 102.
  • a magnetic field generation coil 109 is arranged on the outer periphery of the processing chamber 122.
  • the magnetic field generation coil 109 is composed of a plurality of coils and forms a magnetic field in the processing chamber 122.
  • the high-frequency power oscillated from the microwave power supply 106 generates a high-density plasma 121 in the processing chamber 122 by the interaction between the magnetic field formed by the magnetic field generation coil 109 and the ECR.
  • the sample table 110 is arranged facing the quartz top plate 103.
  • the sample table 110 holds the wafer 111, which is a sample, in a placed state.
  • the sample table 110 is made of aluminum or titanium as a material.
  • a dielectric film 112 is provided on the upper surface of the sample table 110.
  • a thermal sprayed film made of alumina ceramics or the like is arranged on the upper surface of the dielectric film 112 of the sample table 110.
  • conductor films (electrodes) 113 and 114 for electrostatically adsorbing the wafer 111 are installed inside the dielectric film 112, and the wafer 111 is electrostatically adsorbed by applying a DC voltage (not shown). be able to.
  • a second high frequency power (hereinafter referred to as RF bias) is applied to the conductor films 113 and 114 of the sample table 110 from the RF bias power supply 117 which is the second high frequency power supply.
  • the second high frequency power is modulated by a second waveform that repeats the on-section BON (period A) and the off-section BOF (period B).
  • a matching box (matching device) 115 is connected to the RF bias power supply 117, whereby the RF bias is matched.
  • the matching box 115 functions so that the plasma density is changed by the pulsed oscillation of microwaves and the RF bias is matched even if the plasma impedance fluctuates at high speed. More specifically, the matching box 115 invalidates high-speed matching by a solid-state element, a period in which the plasma load (plasma impedance) changes suddenly, and sets a matching section in which the other period is the matching effective range, and plasma (load). ) Is fixed to invalidate the disturbance, and the matching is optimized by predicting the plasma (load), and the matching is achieved at the level of several milliseconds.
  • the RF bias power supply 117 generates high frequency power for ion attraction and supplies it to the sample table 110.
  • the RF bias power supply 117 also generates a pulse-modulated RF bias based on the pulse from the RF bias pulse unit 118.
  • the RF bias frequency is not particularly limited, but for example, a frequency of 400 kHz can be used.
  • Vpp V peak toe peak
  • a microwave pulse unit 108 is connected to the microwave power supply 106.
  • the on-signal from the microwave pulse unit 108 allows the microwave power supply 106 to pulse-modulate the microwave at a set repetition frequency.
  • the high frequency power output from the microwave power supply 106 is called microwave power.
  • this microwave power supply 106 is not a magnetron type microwave power supply but a solid in order to be able to oscillate in the range of 50 watts to 2000 watts and to ensure the responsiveness when pulse oscillated and oscillate accurately.
  • a state-type microwave power supply is used.
  • the control unit 123 is a control device for the plasma etching apparatus, and is connected to the microwave power supply 106 and the RF bias power supply 117 to control the output of the first high frequency power and the second high frequency power.
  • control unit 123 is also electrically connected to the gas supply device 120, the vacuum exhaust device 119, the DC power supply 116, and the like to control them.
  • the control unit 123 has a high power of the microwave power supply 106, a low power of the microwave power supply 106, a high power of the RF bias power supply 117, and an RF bias power supply 117 based on an input setting (also referred to as a recipe) by an input means (not shown).
  • Low power, pulse on / off timing in the microwave pulse unit, on / off repetition frequency and duty ratio of RF bias power supply 117, dueray time of RF bias power supply 117, etc., of microwave power supply 106 and RF bias power supply 117 Control the parameters.
  • control unit 123 controls etching parameters such as gas flow rate, processing pressure, coil current, sample table temperature, and etching time for performing etching.
  • the wafer 111 is conveyed into the processing chamber 122.
  • the etching gas passes between the quartz top plate 103 and the quartz shower plate 102 from the gas supply device 120 via the mass flow controller (not shown) based on the recipe. Then, it is introduced into the processing chamber 122 through the gas hole of the quartz shower plate 102. Further, the pressure inside the vacuum vessel 101 is set to a predetermined pressure, and the plasma 121 is generated in the processing chamber 122 by the oscillation of the microwave power supply 106.
  • the RF bias is output from the RF bias power supply 117, and ions are drawn from the plasma 121 to the wafer 111 to proceed with etching (plasma processing).
  • the etching gas and the reaction product generated by the etching are exhausted from the exhaust device 119.
  • the shower plate 102, the sample table 110, the magnetic field generating coil 109, the vacuum exhaust device 119, the wafer 111, and the like are arranged coaxially with the central axis of the processing chamber 122. Therefore, the etching gas, plasma, saturated ion current, and reaction product each have a coaxial distribution, and as a result, the uniformity of the axisymmetric distribution with respect to the etching rate is improved.
  • the microwave pulse parameter and the RF bias parameter are set as follows.
  • High power P1 600 watts of microwave power supply 106 (changeable in the range of 50-2000 watts)
  • Low power P2 of microwave power supply 106 150 watts (changeable in the range of 20-1600 watts)
  • High / low frequency of microwave power F1 500 hertz
  • High / low period of microwave power T1 1 / F1 (seconds)
  • High / low duty ratio of microwave power D1 40%
  • High section of microwave power TH 1 ms
  • Low section of microwave power TL 1 ms
  • Microwave power on / off frequency F2 100 Hz
  • Microwave power on / off cycle: T2 1 / F2 (seconds)
  • On time of microwave power T3 T2 ⁇ D2,
  • On frequency of microwave power F3 ( 1 / T3): 125 Hz, (However, the high / low frequency F1 of the
  • the reference point PST is set at the start of the high section TH of the microwave power.
  • RF bias on power 100 watts (variable in the range of 10-500 watts)
  • RF bias on section BON 1 ms
  • RF bias off section BOF 1 ms
  • RF bias duty ratio 30% (changeable in the range of 1-100%)
  • RF bias delay time TD 0.6 ms
  • FIG. 2 shows a sequence when an RF bias is applied while switching from the high section TH of the microwave power to the low section TL of the microwave power when the above parameters are set.
  • the graph of microwave power (a) is shown by 201
  • the graph of plasma density (b) is shown by 202
  • the graph of plasma impedance (c) is shown by 204
  • the graph of RF bias (d) is shown by 205.
  • a mixed gas in which two or more kinds of gases are mixed is desirable, and in such a case, it is more preferable to use a mixed gas of a depositary gas for deposition and a gas as an etchant.
  • a mixed gas of chlorine gas (flow rate 100 ml / sec) as the etchant gas and CHF 3 gas (flow rate 10 ml / sec) as the deposition gas is used.
  • the microwave low power P2 (amplitude of the second period) is smaller than the microwave high power P1 (amplitude of the first period) and is larger than 0.
  • the difference between the high power P1 of the microwave and the low power P2 of the microwave is small, for example, 20% or less, the plasma density change width is small and there is almost no delay in the plasma density with respect to the microwave power fluctuation. The effect of the shape cannot be obtained.
  • the difference between the high power P1 of the microwave and the low power P2 of the microwave is large.
  • a plasma having a plasma density of 7.5 ⁇ 10 16 (m -3 ) or more has a high power P1. Is 1600 watts, and when low power P2 is generated below 50 watts on the verge of plasma misfire, it becomes difficult to properly match the RF bias.
  • the difference between the high power P1 and the low power P2 is large, the time for transition from the high section to the low section must be taken into consideration, so that there arises a problem that the plasma density does not change as shown in Graph 202 in FIG.
  • the low power P2 to the high power P1 is 20% or more. As such, it is desirable to determine the difference between the high power P1 and the low power P2.
  • the microwave power high / low frequency F1 and the microwave power high / low duty ratio D1 will be described.
  • the plasma density follows the change in microwave power between the microwave power high section TH and the microwave power low section TL with some delay time constant.
  • the so-called afterglow time in which the plasma density is saturated constantly with respect to a change in microwave power, or when the microwave power is turned from on to off, the plasma density decreases and misfires accordingly, is about 0. It takes about 2 to 5 milliseconds.
  • the microwave power high / low cycle T1 is shortened and the microwave power high / low frequency F1 is increased, the plasma density cannot follow the high and low high-speed repetition of the microwave power, and the plasma becomes stable.
  • the plasma density is not saturated, and the plasma density is repeatedly increased and decreased. As a result, the plasma density is small and repeats increasing and decreasing near the intermediate value.
  • the microwave power high / low frequency F1 is approximately 200 hertz to 5000 hertz, and the microwave power high / low duty ratio D1 is 10% to 90%.
  • the control unit 123 sets the matching box 115 so that the RF bias power matching is performed after the transition from the first period to the second period or after the transition from the second period to the first period. It is preferable to control the reflected power of the RF bias power.
  • the RF bias frequency FB1 is the same as the microwave power high / low frequency F1 and there is no problem.
  • the amplitude of the RF bias power in the period A (on section BON) is larger than the amplitude (preferably zero) in the period B (off section BOF).
  • the RF bias is applied at the hatching region on the lower side of the graph 202 in FIG. 2, in which the RF bias is appropriate by the transition from the microwave power high section TH to the microwave power low section TL and the section 206 where the plasma density falls. It is important that the reflected wave of the RF bias is applied to (less than 5% of the RF bias power).
  • the RF bias is applied in advance of the time TA from the end of the microwave power high section TH.
  • the control unit 123 controls the RF bias power supply 117 so that the second high frequency power of each of the period A is supplied to a part of the first period and a part of the second period. ..
  • the time TA is set to 40% of the microwave power high section TH, but it is actually determined by adjusting the etching shape. For example, when it is desired to increase the etching rate and proceed with etching under high-density plasma, the time TA can be extended as compared with the example in the figure. On the contrary, if you want to proceed with etching under low density plasma and side etching is sufficiently suppressed, extend the RF bias on time and RF bias duty ratio, and apply RF bias in the microwave power low section TL. be able to.
  • FIG. 3A shows the change in plasma density when etching with different types of gas in the above sequence.
  • FIG. 3B shows the change in plasma density in an enlarged manner, and schematically shows the etching shape at a certain time.
  • the microwave power high section TH is switched to the microwave power low section TL
  • the plasma density begins to decrease immediately, but as shown in FIG. 3B (a), there is a response time and the plasma is accompanied by a delay of some time constant.
  • the density decreases.
  • the graphs 302 and 303 are gradually stabilized at the plasma density corresponding to the plasma low power of the plasma power low section TL.
  • the plasma density of the etchant gas type A (chlorine) changes as shown in the solid line graph 302, and is used for deposition.
  • the plasma density of the gas type B (CHF 3 ) of the above changes as shown in the dotted graph 303.
  • the plasma due to the gas type B (CHF 3 ) for deposition is more rational than the plasma due to the gas for etchant. It is increasing. This is similar to the fact that a large amount of gas type B for deposition is supplied only for this short period to make the deposition rich.
  • FIG. 3B (b) shows the plasma etching state at time 305
  • FIG. 3B (b) shows the plasma etching state at time 306.
  • pulse parameter methods for etching for example, a method in which RF bias is applied after waiting for the plasma to stabilize, or a method in which the RF bias is applied immediately after switching between the high and low sections of microwave power.
  • a method in which RF bias is applied after waiting for the plasma to stabilize or a method in which the RF bias is applied immediately after switching between the high and low sections of microwave power.
  • FIG. 4A shows a graph of the plasma density of each gas when an RF bias is applied across the time of switching from the microwave power low section TL to the microwave power high section TH, contrary to the example of FIG. 3A.
  • Reference numeral 4B shows the change in plasma density in an enlarged manner and schematically shows the etching shape.
  • the plasma processing apparatus 1 of the first embodiment is used, and the etching gas, microwave, RF bias power, microwave pulse parameters, etc. are also common.
  • the difference from the first embodiment is that the RF bias delay time TD is set to 1.6 ms and the RF bias delay RD is set to 80%.
  • the microwave power low section TL is switched to the microwave power high section TH
  • the plasma density begins to increase and eventually saturates.
  • the plasma density of gas type A (chlorine) for etchant changes as shown in graph 302, and the plasma density of gas type B (CHF 3 ) for deposition changes as shown in graph 303.
  • the plasma of gas type A (chlorine) for etchant has a higher density than the plasma of gas type B for deposition. It has become.
  • FIG. 4B (b) shows the plasma etching state at time 402
  • FIG. 4B (b) shows the plasma etching state at time 403.
  • the side etching shape as shown in FIG. 12A can be obtained by conventional plasma etching, RF bias is applied across the time of switching from the microwave power high section TH to the microwave power low section TL.
  • the etching shape shown in 12B can be obtained.
  • the change in microwave power (a) is shown in Graph 501
  • the change in RF bias (b) is shown in Graph 502.
  • the microwave power has a high section TH (first period), a low section TL (second period), and a zero amplitude off section (T2-T3: third period).
  • T1 microwave power high / low cycle
  • T2 microwave power on / off cycle
  • F3 microwave power on frequency
  • the microwave power shown in Graph 501 switches from the off state to the on state, repeats the output of the high power (P1) and the low power (P2) multiple times, and then returns to the off (P0) state.
  • P1 high power
  • P2 low power
  • F1 n ⁇ F3 when the microwave power on frequency is F3 and n is a natural number.
  • graph 502 shows the pulse parameters of the RF bias according to the microwave power. It is basically the same as the first embodiment, except that the RF bias is not applied except for the microwave power on time T3 (that is, the third period), as shown by the dotted line in the graph 502. It is a point where the RF bias is not applied (the amplitude of the RF bias is set to zero).
  • the effect of improving the in-plane uniformity of etching (rate) can be obtained.
  • the pulse parameters set for improving the shape controllability set in the above embodiment may adversely affect the in-plane uniformity.
  • microwave power is applied in three stages as shown in FIG.
  • the etching rate depends on the bias of the in-plane distribution of the reaction product generated by plasma etching and the distribution in the plasma processing chamber, depending on the average power of the applied microwave power.
  • the distribution of is uneven.
  • the microwave power on / off duty ratio is adjusted to maximize the etching rate distribution and in-plane uniformity.
  • FIG. 6 shows a state in which the oscillated microwave power is binarized to high power P1 and low power P2, and the applied RF bias is also binarized to high power P3 and low power P4.
  • the graph of microwave power (a) is shown by 601
  • the graph of plasma density (b) is shown by 602
  • the graph of plasma impedance (c) is shown by 604
  • the graph of RF bias (d) is shown by 605.
  • the period A (on section BON) to which the high power P3 of the RF bias is applied is longer than the first period (high section TH) and longer than the second period (high section TL).
  • microwave high power P1 is 600 watts
  • microwave low power P2 is 150 watts
  • RF bias on power is 100 watts
  • microwave power high / low period T1 is 2 milliseconds
  • micro The wave power high / low frequency F1 is 500 hertz
  • the microwave power high section TH is 1 millisecond
  • the RF bias high / low frequency is 500 hertz
  • the RF bias high duty ratio RHD is 70%
  • the RF bias low duty ratio RLD is set.
  • the change in RF bias applied when 30%, RF bias high delay HDL is 50%
  • RF bias low delay LDL is 20% is as shown in Graph 604.
  • RF bias high duty ratio RHD The sum of "RF bias low duty ratio RLD” and “RF bias low duty ratio RLD” must be 100%, and each RF bias duty ratio and each RF bias duray must be an appropriate percentage.
  • both the switching from the microwave power high section TH to the microwave power low section TL and the switching from the microwave power low section TL to the microwave power high section TH are both within the on section of the RF bias high power. Is going.
  • One of the effects is that the etching shapes of the side and the taper can be balanced by using the above embodiment, and the other effect is the fluctuation of Vpp as shown in FIG. 9, although the details will be described later. Is to be able to be suppressed as much as possible.
  • FIG. 7 is a diagram similar to FIG. In FIG. 7, using the same RF bias six parameters as in the fourth embodiment, the RF bias high power P3 is applied at the timing of switching from the microwave power high section TH to the microwave power low section TL, and at the same time.
  • the RF bias low power P4 is applied at the timing of switching from the microwave power low section TL to the microwave power high section TH.
  • the change in the RF bias supplied at this time is shown in Graph 704.
  • the magnitudes of the RF bias high power P3 and the RF bias low power P4 are the same. That is, the RF bias repeatedly changes in a pulse shape between zero and P3.
  • the microwave high power P1 is 600 watts
  • the microwave low power P2 is 150 watts
  • the RF bias on power P3 is 100 watts
  • the microwave power high / low period T1 is 2. Millimeters
  • microwave power high / low frequency F1 is 500 hertz
  • microwave power high section TH is 1 millisecond
  • RF bias high duty ratio RHD is 30%
  • RF bias low duty ratio RLD is 35%
  • RF bias high is 35% and the RF bias low delay LDL is 90%.
  • RF bias is applied by selecting only the timing when the plasma density is increasing or decreasing.
  • extreme etching control for example, when it is desired to completely form a deposition film on the side wall of the pattern, but it is desired to surely proceed with etching at the bottom of the pattern, or when it is desired to proceed with etching of the bottom of the pattern more reliably, or rather than uniformity of the distribution in the etching plane. It is preferable to use it when it is desired to proceed with cycle etching in which deposition and etching are repeated in a short time.
  • FIG. 8A and 8B are similar to FIG. 7, but Vpp is added to (e). Similar to the above-described embodiment, the method is to supply the microwave power so that the microwave power high section TH and the microwave power low section TL are alternately repeated in a pulse shape, but the figure shown as a first comparative example.
  • the RF bias is a continuous wave (constant) as shown in Graph 801.
  • the change in Vpp of the voltage on the sample table at this time is shown by Graph 802.
  • FIG. 8B shown as a second comparative example as shown in Graph 803, the high power of the RF bias is applied at the same time as the start of the microwave power high section TH, and the RF bias is applied at the same time as the start of the microwave power low section TL. Apply low power.
  • the change in Vpp of the voltage on the sample table at this time is shown by Graph 804.
  • Vpp increases or decreases in response to an increase or decrease in plasma impedance.
  • RF bias matching is also performed at arbitrary timing (sequential), so reflected waves are also generated according to the increase and decrease of plasma impedance, so the fluctuation of Vpp may fluctuate even more than Graph 802. ..
  • FIG. 9 is a diagram similar to FIG. 8B, showing a sequence showing the relationship between microwave power, RF bias, and Vpp.
  • the graph of microwave power (a) is 901
  • the graph of plasma density (b) is 902
  • the graph of plasma impedance (c) is 903
  • the graph of RF bias (d) is 904
  • the graph of Vpp (e) is 905. Shows.
  • the RF bias is changed from low power to high power before switching from microwave power low section TL to microwave power high section TH, and microwave power high section TH to microwave power low section. After switching to TL, it has been changed from high power to low power.
  • Vpp increases due to the increase in RF bias, but the plasma density is already stable and reflected waves hardly appear. After that, when the microwave power low section TL is switched to the microwave power high section TH, the plasma density increases and the plasma impedance decreases conversely. Therefore, Vpp decreases, the plasma impedance becomes stable, and Vpp also becomes stable.
  • Vpp when the microwave power high section TH is switched to the microwave power low section TL, Vpp also rises as the impedance rises, but the RF bias switches to low power during the rise, so Vpp starts to fall.
  • the variation of Vpp is shown in Graph 905, although it varies slightly depending on the matching mode of RF bias. Specifically, each time the microwave power high section TH and the microwave power low section TL are switched, Vpp shows a slight increase / decrease behavior, but the direction of change of Vpp is the same, and the fluctuation range of Vpp is. , It is very small compared to the methods of FIGS. 8A and 8B.
  • etching is advanced with a large fluctuation range of Vpp, the following problems will occur.
  • One of the problems is related to the reproducibility and stability of the etching process. Specifically, the difference in the application timing of the microwave power and the RF bias causes a large fluctuation in Vpp, which causes a difference in etching performance, which in turn causes a machine difference.
  • Another problem is related to the flatness and roughness of the etched shape.
  • etching is advanced while greatly changing the Vpp of the RF bias, the ion incidence on the side wall of the pattern and the bottom surface of the pattern varies along the time axis, the pattern is rough, and in some cases, the etching shape is defective such as scalloping (stepped). May occur, and the electrical performance of the element formed from the etched wafer may be deteriorated. According to this embodiment, such a defect can be suppressed.
  • the seventh embodiment will be described. 10 is a diagram similar to FIG. 2, but (e) shows the change in the RF bias reflected wave, and (f) shows the change in Vpp.
  • the RF bias matching method performed in the matching box 115 will be described with reference to FIG.
  • the RF bias has already been applied before the transition from the microwave power high section TH to the microwave power low section TL.
  • the section immediately after the start of RF bias is not included in the matching valid period due to the setting of RF bias, and as a result, the matching operation of RF bias is not performed.
  • the plasma density approaches the saturated (stable) region in response to the application of the high power of the microwave power, but as shown in Graph 1004, a reflected wave of RF bias is generated to some extent.
  • Graph 1005 shows the effective Vpp change of the RF bias of 400 KHz applied to the sample table. Since the plasma density is the highest in the section immediately after the application of the RF bias is started, the plasma impedance is the lowest and the Vpp of the RF bias is small as shown in the graph 1001. Considering the reflected wave of RF bias and the lamp of RF bias power, the microwave power high section TH ends in the region where Vpp gradually rises and is just stable.
  • the microwave power high section TH is switched to the microwave power low section TL, but the application of the RF bias is maintained.
  • Vpp increases accordingly.
  • RF bias matching is set for this rising impedance.
  • the plasma impedance rises sharply, so it is difficult to completely eliminate the reflected wave, but even so, the RF bias is the most in the central section (referred to as the matching point) of the matching region shown by hatching in FIG.
  • the reflected wave becomes smaller and Vpp becomes the largest.
  • the above operation is periodically repeated in the microwave power high / low cycle T1, but almost the same matching result can be obtained by holding (not moving) the matching point obtained above.
  • the RF bias is already applied, and the microwave power high section TH and the microwave power are applied. It is preferable to use the average value of the plasma impedance immediately after switching the low section TL as the matching point of the RF bias, and apply the RF bias aiming at the timing when the plasma density changes.
  • FIG. 11A is a schematic cross-sectional view of a plasma processing device having two sets of microwave power supplies and two sets of RF bias power supplies.
  • FIG. 11B is a diagram showing changes in microwave power used in this embodiment, and
  • FIG. 11C is a diagram showing changes in RF bias used in this embodiment.
  • the first microwave power supply device has an inner peripheral microwave power supply 1101, an inner peripheral waveguide 1113, and an inner peripheral cavity resonator 1115
  • the second microwave power supply device has an outer peripheral microwave power supply 1102. , The outer peripheral waveguide 1114, and the outer peripheral cavity resonator 1116.
  • the inner peripheral microwave pulse unit 1103 controls the output of the inner peripheral microwave power supply 1101
  • the outer peripheral microwave pulse unit 1104 controls the output of the outer peripheral microwave power supply 1102.
  • the two RF bias power supply devices are an inner peripheral RF bias power supply 1105 and an outer peripheral RF bias power supply 1106, which are connected to the electrode inner peripheral conductive film 1117 and the electrode outer peripheral conductive film 1118 via a matching box, respectively. ing.
  • the inner peripheral RF bias pulse unit 1107 controls the output of the inner peripheral RF bias power supply 1105
  • the outer peripheral RF bias pulse unit 1108 controls the output of the outer peripheral RF bias power supply 1106.
  • the two microwave power supplies can oscillate the microwave power in a pulsed manner (pulse-modulated to repeat on and off) or in a continuous wave (without pulse-modulated), and two RF biases.
  • the power supply can also apply the RF bias in a pulsed manner (pulse-modulated to repeat on / off) or in a continuous wave (without pulse-modulated).
  • the microwave power is repeatedly turned on and off from one microwave power source, and a continuous wave is oscillated from the other microwave power source.
  • a three-stage oscillation method in which the microwave power is high, low, and off can be realized by the sum of the microwave power applied to the processing chamber, and FIG. 5A can be realized. It is possible to realize microwave power as shown in.
  • the application of one RF bias is binarized with the on power / off power of the RF bias and applied in the same manner as the microwave power.
  • the other RF bias is applied as a continuous wave, the total amount of RF bias applied to the sample table changes as shown in Graph 1112 of FIG. 11C, and the RF bias has three stages of high power, low power, and power off.
  • the application method can be realized.
  • RF bias matching it is important to adjust the matching on the pulse side of RF bias on / off, and only the section immediately after switching from power-on to power-off of the microwave power supply is the matching effective section. It is desirable to do.
  • each microwave power supply allows three stages of high, low, and off of microwave power, it is possible to oscillate, for example, five stages of microwave power by combining these.
  • all RF bias power supplies have the same oscillation frequency (400 kHz), but even if the frequencies of the two RF bias power supplies are different (for example, 400 kHz and 2 MHz), the same effect is obtained.
  • biases having different frequencies of multiple RF biases improvement of in-plane uniformity can be expected.
  • the oscillation frequency of each microwave power supply may be different (for example, 2.45 GHz and 915 MHz). In such a case, it is possible to suppress the separation and interference of the microwave from the inner peripheral microwave power supply and the microwave from the outer peripheral microwave power supply, and it is expected that the controllability of the in-plane uniformity is improved as in the RF bias. ..
  • Plasma processing device 101 ... Vacuum container, 102 ... shower plate, 103 ... Quartz top plate, 104 ... Cavity resonance part, 105 ... Waveguide tube, 106 ... Microwave power supply, 107 ... Tuner, 108 ... Microwave pulse unit , 109 ... magnetic field generation coil, 110 ... sample table, 111 ... wafer, 112 ... dielectric film, 113, 114 ... conductor film, 115 ... matching box, 117 ... RF bias power supply, 118 ... RF bias pulse unit, 119 ... Vacuum exhaust device, 120 ... Gas supply device, 121 ... Plasma, 122 ... Processing room, 123 ... Control unit, 1101 ... Inner peripheral microwave power supply, 1102 ...
  • Outer peripheral microwave power supply 1103 ... Inner peripheral microwave pulse unit 1,105 ... Inner peripheral RF bias power supply, 1106 ... Outer peripheral RF bias power supply, 1107 ... Inner peripheral RF bias pulse unit, 1108 ... Outer peripheral RF bias pulse unit

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