CN114521283B - 等离子处理装置 - Google Patents

等离子处理装置

Info

Publication number
CN114521283B
CN114521283B CN202080020805.6A CN202080020805A CN114521283B CN 114521283 B CN114521283 B CN 114521283B CN 202080020805 A CN202080020805 A CN 202080020805A CN 114521283 B CN114521283 B CN 114521283B
Authority
CN
China
Prior art keywords
period
bias
frequency power
power
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080020805.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN114521283A (zh
Inventor
池田纪彦
山田一也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Publication of CN114521283A publication Critical patent/CN114521283A/zh
Application granted granted Critical
Publication of CN114521283B publication Critical patent/CN114521283B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32201—Generating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32293—Microwave generated discharge using particular waveforms, e.g. polarised waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
CN202080020805.6A 2020-08-27 2020-08-27 等离子处理装置 Active CN114521283B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/032428 WO2022044216A1 (ja) 2020-08-27 2020-08-27 プラズマ処理装置

Publications (2)

Publication Number Publication Date
CN114521283A CN114521283A (zh) 2022-05-20
CN114521283B true CN114521283B (zh) 2025-07-29

Family

ID=80354908

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080020805.6A Active CN114521283B (zh) 2020-08-27 2020-08-27 等离子处理装置

Country Status (6)

Country Link
US (1) US12009180B2 (https=)
JP (1) JP7201805B2 (https=)
KR (1) KR20220027803A (https=)
CN (1) CN114521283B (https=)
TW (1) TWI824268B (https=)
WO (1) WO2022044216A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023238235A1 (ja) * 2022-06-07 2023-12-14 株式会社日立ハイテク プラズマ処理装置
WO2024241390A1 (en) * 2023-05-19 2024-11-28 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
CN119170473B (zh) * 2023-06-19 2025-10-10 北京北方华创微电子装备有限公司 半导体工艺设备及其脉冲调节等离子体方法
CN119480597B (zh) * 2023-08-08 2025-11-11 北京北方华创微电子装备有限公司 离子能量控制系统以及控制方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5947733A (ja) 1982-09-13 1984-03-17 Hitachi Ltd プラズマプロセス方法および装置
JP3658249B2 (ja) * 1998-07-31 2005-06-08 キヤノン株式会社 半導体層の製造方法、光起電力素子の製造方法及び半導体層の製造装置
JP5192209B2 (ja) 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
JP2009193988A (ja) * 2008-02-12 2009-08-27 Tokyo Electron Ltd プラズマエッチング方法及びコンピュータ記憶媒体
JP5097233B2 (ja) 2010-03-19 2012-12-12 パナソニック株式会社 プラズマドーピング方法
WO2014174650A1 (ja) * 2013-04-26 2014-10-30 株式会社 日立ハイテクノロジーズ プラズマ処理方法
JP2014220360A (ja) 2013-05-08 2014-11-20 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP2014229751A (ja) * 2013-05-22 2014-12-08 株式会社日立ハイテクノロジーズ プラズマ処理装置および処理方法
JP6180799B2 (ja) * 2013-06-06 2017-08-16 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2015115564A (ja) 2013-12-16 2015-06-22 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
US11417501B2 (en) 2015-09-29 2022-08-16 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
JP6670692B2 (ja) 2015-09-29 2020-03-25 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
JP6043852B2 (ja) 2015-10-01 2016-12-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6976228B2 (ja) 2018-07-23 2021-12-08 株式会社日立ハイテク プラズマ処理装置
JP7122268B2 (ja) * 2019-02-05 2022-08-19 東京エレクトロン株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
JPWO2022044216A1 (https=) 2022-03-03
CN114521283A (zh) 2022-05-20
TWI824268B (zh) 2023-12-01
KR20220027803A (ko) 2022-03-08
WO2022044216A1 (ja) 2022-03-03
TW202209408A (zh) 2022-03-01
US12009180B2 (en) 2024-06-11
JP7201805B2 (ja) 2023-01-10
US20240014007A1 (en) 2024-01-11

Similar Documents

Publication Publication Date Title
CN114521283B (zh) 等离子处理装置
TWI856020B (zh) 用於電漿處理的控制系統及方法
TWI880421B (zh) 電漿處理裝置、控制方法、處理器及非暫時性電腦可讀記錄媒體
JP5822795B2 (ja) プラズマ処理装置
CN102027810B (zh) 使用rf功率传递的时间分解调频方案以用于脉冲等离子体工艺的方法及设备
JP6295119B2 (ja) プラズマ処理装置
JP6491888B2 (ja) プラズマ処理方法およびプラズマ処理装置
JP6043852B2 (ja) プラズマ処理装置
TW202418340A (zh) 脈衝電壓電漿處理設備及方法
TWI878914B (zh) 電漿處理裝置
JP3787297B2 (ja) プラズマ処理装置
TW202447698A (zh) 電漿處理設備與電漿處理方法
JP3563054B2 (ja) プラズマ処理装置および方法
TW202420373A (zh) 以直流偏壓脈衝減低有關蝕刻的深寬比
TW202541103A (zh) 電漿的脈衝電壓波形偏壓
JP4653395B2 (ja) プラズマ処理装置
CN112652513B (zh) 处理方法和等离子体处理装置
JP7765651B2 (ja) プラズマ処理装置およびプラズマ処理方法
KR20260052201A (ko) 플라스마 처리 장치 및 플라스마 처리 방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant