JPWO2022044216A1 - - Google Patents
Info
- Publication number
- JPWO2022044216A1 JPWO2022044216A1 JP2021524472A JP2021524472A JPWO2022044216A1 JP WO2022044216 A1 JPWO2022044216 A1 JP WO2022044216A1 JP 2021524472 A JP2021524472 A JP 2021524472A JP 2021524472 A JP2021524472 A JP 2021524472A JP WO2022044216 A1 JPWO2022044216 A1 JP WO2022044216A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32201—Generating means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32293—Microwave generated discharge using particular waveforms, e.g. polarised waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32311—Circuits specially adapted for controlling the microwave discharge
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0421—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/032428 WO2022044216A1 (ja) | 2020-08-27 | 2020-08-27 | プラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022044216A1 true JPWO2022044216A1 (https=) | 2022-03-03 |
| JP7201805B2 JP7201805B2 (ja) | 2023-01-10 |
Family
ID=80354908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021524472A Active JP7201805B2 (ja) | 2020-08-27 | 2020-08-27 | プラズマ処理装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12009180B2 (https=) |
| JP (1) | JP7201805B2 (https=) |
| KR (1) | KR20220027803A (https=) |
| CN (1) | CN114521283B (https=) |
| TW (1) | TWI824268B (https=) |
| WO (1) | WO2022044216A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119480597A (zh) * | 2023-08-08 | 2025-02-18 | 北京北方华创微电子装备有限公司 | 离子能量控制系统以及控制方法 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023238235A1 (ja) * | 2022-06-07 | 2023-12-14 | 株式会社日立ハイテク | プラズマ処理装置 |
| WO2024241390A1 (en) * | 2023-05-19 | 2024-11-28 | Hitachi High-Tech Corporation | Plasma processing apparatus and plasma processing method |
| CN119170473B (zh) * | 2023-06-19 | 2025-10-10 | 北京北方华创微电子装备有限公司 | 半导体工艺设备及其脉冲调节等离子体方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008044633A1 (fr) * | 2006-10-06 | 2008-04-17 | Tokyo Electron Limited | Dispositif et procédé de gravure au plasma |
| JP2011198983A (ja) * | 2010-03-19 | 2011-10-06 | Panasonic Corp | プラズマドーピング方法 |
| JP2014220360A (ja) * | 2013-05-08 | 2014-11-20 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| JP2016027667A (ja) * | 2015-10-01 | 2016-02-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5947733A (ja) | 1982-09-13 | 1984-03-17 | Hitachi Ltd | プラズマプロセス方法および装置 |
| JP3658249B2 (ja) * | 1998-07-31 | 2005-06-08 | キヤノン株式会社 | 半導体層の製造方法、光起電力素子の製造方法及び半導体層の製造装置 |
| JP2009193988A (ja) * | 2008-02-12 | 2009-08-27 | Tokyo Electron Ltd | プラズマエッチング方法及びコンピュータ記憶媒体 |
| WO2014174650A1 (ja) * | 2013-04-26 | 2014-10-30 | 株式会社 日立ハイテクノロジーズ | プラズマ処理方法 |
| JP2014229751A (ja) * | 2013-05-22 | 2014-12-08 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置および処理方法 |
| JP6180799B2 (ja) * | 2013-06-06 | 2017-08-16 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP2015115564A (ja) | 2013-12-16 | 2015-06-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
| US11417501B2 (en) | 2015-09-29 | 2022-08-16 | Hitachi High-Tech Corporation | Plasma processing apparatus and plasma processing method |
| JP6670692B2 (ja) | 2015-09-29 | 2020-03-25 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
| JP6976228B2 (ja) | 2018-07-23 | 2021-12-08 | 株式会社日立ハイテク | プラズマ処理装置 |
| JP7122268B2 (ja) * | 2019-02-05 | 2022-08-19 | 東京エレクトロン株式会社 | プラズマ処理装置 |
-
2020
- 2020-08-27 JP JP2021524472A patent/JP7201805B2/ja active Active
- 2020-08-27 KR KR1020217027245A patent/KR20220027803A/ko active Pending
- 2020-08-27 WO PCT/JP2020/032428 patent/WO2022044216A1/ja not_active Ceased
- 2020-08-27 CN CN202080020805.6A patent/CN114521283B/zh active Active
- 2020-08-27 US US17/435,509 patent/US12009180B2/en active Active
-
2021
- 2021-07-12 TW TW110125452A patent/TWI824268B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008044633A1 (fr) * | 2006-10-06 | 2008-04-17 | Tokyo Electron Limited | Dispositif et procédé de gravure au plasma |
| JP2011198983A (ja) * | 2010-03-19 | 2011-10-06 | Panasonic Corp | プラズマドーピング方法 |
| JP2014220360A (ja) * | 2013-05-08 | 2014-11-20 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| JP2016027667A (ja) * | 2015-10-01 | 2016-02-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119480597A (zh) * | 2023-08-08 | 2025-02-18 | 北京北方华创微电子装备有限公司 | 离子能量控制系统以及控制方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114521283A (zh) | 2022-05-20 |
| TWI824268B (zh) | 2023-12-01 |
| KR20220027803A (ko) | 2022-03-08 |
| WO2022044216A1 (ja) | 2022-03-03 |
| TW202209408A (zh) | 2022-03-01 |
| CN114521283B (zh) | 2025-07-29 |
| US12009180B2 (en) | 2024-06-11 |
| JP7201805B2 (ja) | 2023-01-10 |
| US20240014007A1 (en) | 2024-01-11 |
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